An iteratively triggered semiconductor light-emitting device and its fabrication method

By coating a hybrid thin film of upconversion luminescent material and binder around a semiconductor light-emitting diode, iterative cyclic triggering is achieved, solving the problem of low energy utilization of semiconductor light-emitting diodes, improving luminous efficiency and reducing power consumption.

CN120882188BActive Publication Date: 2026-01-30CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202511361896.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-09-23
Publication Date
2026-01-30
Estimated Expiration
2045-09-23

AI Technical Summary

Technical Problem

The low energy efficiency of existing semiconductor light-emitting diodes limits their application in high-performance optoelectronic devices.

Method used

A uniform upconversion luminescent film is formed by a mixture of upconversion luminescent material and adhesive. The luminescence efficiency is improved by an iterative cyclic triggering mechanism. The upconversion luminescent material is used to convert low-energy photons into high-energy photons to trigger the re-emission of semiconductor light-emitting diodes.

Benefits of technology

It significantly improves the luminous efficiency and energy utilization of semiconductor light-emitting diodes and reduces device power consumption.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention relates to the field of photoelectric conversion device technology, and more particularly to an iteratively cyclically triggered semiconductor light-emitting device and its fabrication method. The device includes a semiconductor light-emitting diode (LED) and a quartz substrate disposed around the LED. An upconversion light-emitting film is coated on the quartz substrate. The upconversion light-emitting material in the upconversion light-emitting film includes any one of NaYF4:Yb,Er, ZnF2:Yb,Er, or NaYF4:Yb,Tm. The upconversion light-emitting film is a mixture of the upconversion light-emitting material and an adhesive. The adhesive includes polymethyl methacrylate, polyvinylidene fluoride, or polyvinyl alcohol. The advantages are: utilizing semiconductor light emission to trigger upconversion light emission, and then using the upconversion light emission to achieve secondary triggering of the LED, with cyclic triggering, improves the device's luminous efficiency and reduces power consumption.
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Description

Technical Field

[0001] This invention relates to the field of photoelectric conversion device technology, and in particular to an iteratively triggered semiconductor light-emitting device and its fabrication method. Background Technology

[0002] With the rapid development of semiconductor light-emitting diode (LED) technology, they have been widely used in lighting, display, and communication fields. Improving the luminous efficiency of LEDs is one of the core research issues. Although the performance of devices has been improved to some extent through optimization of material structure and device design, problems such as low energy utilization still exist, limiting their further application in high-performance optoelectronic devices.

[0003] Upconversion luminescent materials possess anti-Stokes shift properties, enabling them to absorb multiple low-energy photons and emit high-energy photons. They are commonly used in fields such as bioimaging, anti-counterfeiting, and photocatalysis. Introducing upconversion materials into LED systems and establishing an energy coupling mechanism between the upconversion system and the LED, while leveraging the anti-Stokes shift properties of the upconversion luminescent materials to improve the overall luminous efficiency of the device, will further enhance the energy utilization of LEDs.

[0004] Therefore, there is an urgent need to develop a new, efficient, and scalable integration method that utilizes upconversion luminescent materials to form an energy cycle enhancement structure with LEDs, thereby significantly improving the luminous efficiency of semiconductor light-emitting diodes. Summary of the Invention

[0005] To address the aforementioned problems, this invention provides an iteratively triggered semiconductor light-emitting device and its fabrication method.

[0006] The primary objective of this invention is to provide an iteratively triggered semiconductor light-emitting device, comprising a semiconductor light-emitting diode and a quartz substrate disposed around the semiconductor light-emitting diode;

[0007] An upconversion light-emitting thin film is coated on the quartz substrate;

[0008] The upconversion luminescent material in the upconversion luminescent film includes any one of NaYF4:Yb,Er, ZnF2:Yb,Er, or NaYF4:Yb,Tm.

[0009] Preferably, the upconversion luminescent film is a mixture of upconversion luminescent material and adhesive; the adhesive includes any one of polymethyl methacrylate, polyvinylidene fluoride or polyvinyl alcohol.

[0010] Preferably, the mass ratio of the upconversion luminescent material to the adhesive is 8~12:1.

[0011] Preferably, before coating the upconversion luminescent film, the quartz substrate is ultrasonically cleaned with detergent, ethanol, acetone and isopropanol for 8-15 minutes each, then dried with nitrogen and treated with ultraviolet ozone for 25-35 minutes.

[0012] Preferably, the method for preparing the upconversion luminescent film includes: immersing a quartz substrate in a mixed solution prepared by a mixture of upconversion luminescent material and binder, and obtaining the upconversion luminescent film by slowly evaporating the solvent.

[0013] Preferably, the method for preparing the mixed solution includes: dissolving the mixture of the upconverting luminescent material and the binder in an organic volatile solvent, and continuously heating and stirring at 55~65°C for 20~30 hours.

[0014] Preferably, the mass ratio of the upconversion luminescent material to the adhesive is 10:1; and the heating and stirring temperature is 60°C.

[0015] Preferably, the organic volatile solvent is N-methylpyrrolidone or dimethylformamide.

[0016] The second objective of this invention is to provide a method for fabricating an iteratively cyclically triggered semiconductor light-emitting device, which specifically includes the following steps:

[0017] S1. Mix the upconversion luminescent material and the binder at a mass ratio of 8~12:1, and fully dissolve them in an organic volatile solvent. Heat and stir continuously at 55~65°C for 20~30 hours to obtain a mixed solution.

[0018] S2. Immerse the quartz substrate in the mixed solution obtained in step S1, and use a slow evaporation method to evaporate the organic volatile solvent to obtain an upconversion light-emitting film;

[0019] S3. Fix the quartz substrate coated with the upconversion light-emitting film around the semiconductor light-emitting diode to obtain an iteratively triggered semiconductor light-emitting device.

[0020] Preferably, the method further includes step S0: the quartz substrate is ultrasonically cleaned with detergent, ethanol, acetone and isopropanol for 8-15 minutes each, then dried with nitrogen and treated with ultraviolet ozone for 25-35 minutes.

[0021] The upconversion luminescent material includes any one of NaYF4:Yb,Er, ZnF2:Yb,Er, or NaYF4:Yb,Tm;

[0022] The adhesive includes any one of polymethyl methacrylate, polyvinylidene fluoride, or polyvinyl alcohol.

[0023] The organic volatile solvent is N-methylpyrrolidone or dimethylformamide.

[0024] Compared with the prior art, the present invention can achieve the following beneficial effects:

[0025] This invention provides an iteratively cyclically triggered semiconductor light-emitting device and its fabrication method, overcoming the problem of low energy utilization in traditional semiconductor light-emitting diodes. A mixture of upconversion luminescent material and binder is used to form a uniform upconversion luminescent film through a specific fabrication method. The semiconductor light emission triggers upconversion luminescence, which in turn triggers a secondary LED light emission. This process is repeated cyclically, improving the device's luminous efficiency and reducing its power consumption. Attached Figure Description

[0026] Figure 1 This is a schematic diagram illustrating the working principle of an iteratively triggered semiconductor light-emitting device to improve the efficiency of a semiconductor light-emitting diode, according to an embodiment of the present invention.

[0027] Figure 2 The figures show a comparison of the power density improvement of semiconductor light-emitting diodes provided by embodiments of the present invention; in the figures, "comparison" represents the power density of existing semiconductor light-emitting diodes, and "iteration" represents the power density of semiconductor light-emitting diodes in the semiconductor light-emitting device of the present invention that is triggered by iterative cycles.

[0028] Figure label:

[0029] 1. Semiconductor light-emitting diode;

[0030] 2. Upconversion luminescent materials;

[0031] 3. Upconversion light emission triggers the light emission of a semiconductor light-emitting diode;

[0032] 4. Upconversion absorption. Detailed Implementation

[0033] In the following description, embodiments of the invention will be described with reference to the accompanying drawings. In the description below, the same modules are denoted by the same reference numerals. Where the same reference numerals are used, their names and functions are also the same. Therefore, their detailed description will not be repeated.

[0034] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not constitute a limitation thereof.

[0035] The present invention provides an iteratively triggered semiconductor light-emitting device, comprising: a semiconductor light-emitting diode, and a quartz substrate disposed around the semiconductor light-emitting diode;

[0036] An upconversion light-emitting thin film is coated on a quartz substrate;

[0037] Specifically, the upconversion luminescent film is a mixture of upconversion luminescent material and adhesive;

[0038] Specifically, the upconversion luminescent materials include, but are not limited to, any one of NaYF4:Yb,Er, ZnF2:Yb,Er, or NaYF4:Yb,Tm;

[0039] Specifically, the adhesive includes, but is not limited to, any one of polymethyl methacrylate, polyvinylidene fluoride, or polyvinyl alcohol;

[0040] Specifically, the mass ratio of the upconversion luminescent material to the binder is 8~12:1; in a specific embodiment, the mass ratio is 10:1.

[0041] Specifically, the quartz substrate is treated as follows before coating: the quartz substrate is ultrasonically cleaned with detergent, ethanol, acetone and isopropanol for 8-15 minutes each, then dried with nitrogen and treated with ultraviolet ozone for 25-35 minutes.

[0042] Specifically, the preparation method of the upconversion luminescent film includes: immersing a quartz substrate in a mixed solution prepared by a mixture of upconversion luminescent material and binder, and obtaining the upconversion luminescent film by slowly evaporating the solvent;

[0043] Specifically, the preparation method of the mixed solution includes: dissolving the mixture of the upconverting luminescent material and the binder in an organic volatile solvent, and continuously heating and stirring at 55~65°C for 20~30 hours; in a specific embodiment, continuously heating and stirring at 60°C for 24 hours.

[0044] Specifically, the volatile organic solvent is N-methylpyrrolidone (NMP) or dimethylformamide (DMF).

[0045] Specifically, a quartz substrate coated with a mixture of upconversion luminescent material and adhesive is fixed around the semiconductor light-emitting diode.

[0046] Example 1

[0047] This embodiment provides a method for fabricating an iteratively triggered semiconductor light-emitting device. The device includes a semiconductor light-emitting diode and a quartz substrate disposed around the semiconductor light-emitting diode; an upconversion light-emitting thin film is coated on the quartz substrate; specifically, the method includes the following steps:

[0048] S0. Select a quartz substrate and ultrasonically clean it for 10 minutes each with detergent, ethanol, acetone and isopropanol in sequence. Then dry it with nitrogen and treat it with ultraviolet ozone for 30 minutes.

[0049] S1. Mix ZnF2:Yb,Er upconversion luminescent material with polyvinylidene fluoride (PVDF) binder at a mass ratio of 10:1, and fully dissolve it in the organic volatile solvent N-methylpyrrolidone (NMP). Heat and stir continuously at 60°C for 24 hours to obtain a mixed solution.

[0050] S2. Immerse the treated quartz substrate in the mixed solution and use a slow evaporation method to evaporate the solvent to obtain an upconversion light-emitting film;

[0051] S3. Fix the quartz substrate coated with the upconversion light-emitting film around the semiconductor light-emitting diode to obtain an iteratively triggered semiconductor light-emitting device.

[0052] The iterative cyclic triggering working principle of the semiconductor light-emitting device prepared above, which effectively improves the efficiency of semiconductor light-emitting diodes, is as follows: Figure 1 As shown, photons emitted by the semiconductor light-emitting diode 1 are absorbed by the upconversion luminescent material 2. After absorbing low-energy photons, the upconversion luminescent material 2 emits high-energy photons, which further excite the semiconductor light-emitting diode 1, triggering it to emit light again, thus achieving energy recycling. Upconversion absorption 4 refers to the process of the upconversion luminescent material 2 absorbing photons. The entire device improves luminous efficiency and energy utilization through this iterative cyclic triggering mechanism.

[0053] After applying this device, the power density of the semiconductor light-emitting diode increased from the original 10.89 mW / cm². 2 Increased to 22.20 mW / cm 2 ( Figure 2 This effectively enhances the device's light output performance.

[0054] Example 2

[0055] This embodiment provides a method for fabricating an iteratively triggered semiconductor light-emitting device, wherein: in step S1, the upconversion light-emitting material is NaYF4:Yb,Er; and the binder is polyvinylidene fluoride;

[0056] The remaining steps are the same as in Example 1; the device structure is the same as in Example 1.

[0057] Example 3

[0058] This embodiment provides a method for fabricating an iteratively triggered semiconductor light-emitting device, wherein: in step S1, the upconversion light-emitting material is NaYF4:Yb,Tm; the binder is polyvinylidene fluoride; and the organic volatile solvent is dimethylformamide;

[0059] The remaining steps are the same as in Example 1; the device structure is the same as in Example 1.

[0060] It should be understood that the various forms of processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this invention disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this invention can be achieved, and this is not limited herein.

[0061] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An iterated loop triggered semiconductor light emitting device, characterized by: The semiconductor light-emitting diode and a quartz substrate arranged around the semiconductor light-emitting diode; The quartz substrate is coated with an up-conversion luminescent film; the up-conversion luminescent film is a mixture of up-conversion luminescent material and adhesive; the adhesive includes any one of polymethyl methacrylate, polyvinylidene fluoride or polyvinyl alcohol; The up-conversion luminescent material in the up-conversion luminescent film includes any one of NaYF4:Yb,Er, ZnF2:Yb,Er or NaYF4:Yb,Tm.

2. The iteratively cycled triggered semiconductor light emitting device of claim 1, wherein: The mass ratio of the up-conversion luminescent material to the adhesive is 8-12:

1.

3. The iteratively cycled triggered semiconductor light emitting device of claim 1, wherein: Before coating the up-conversion luminescent film, the quartz substrate is sequentially ultrasonically cleaned with dishwashing liquid, ethanol, acetone and isopropanol for 8-15 minutes, then dried with nitrogen and treated with ultraviolet ozone for 25-35 minutes.

4. The iteratively cycled triggered semiconductor light emitting device of claim 1, wherein: The preparation method of the up-conversion luminescent film includes immersing the quartz substrate in a mixed solution prepared by mixing the up-conversion luminescent material and the adhesive, and obtaining the up-conversion luminescent film by slowly evaporating the solvent.

5. The iteratively cycled triggered semiconductor light emitting device of claim 4, wherein: The preparation method of the mixed solution includes dissolving the mixture of the up-conversion luminescent material and the adhesive in an organic volatile solvent, continuously heating and stirring at 55-65°C for 20-30 hours.

6. The iteratively cycled triggered semiconductor light emitting device of claim 5, wherein: The mass ratio of the up-conversion luminescent material to the adhesive is 10:1; the temperature of the heating and stirring is 60°C.

7. The iteratively cycled triggered semiconductor light emitting device of claim 5, wherein: The organic volatile solvent is N-methyl pyrrolidone or dimethylformamide.

8. A method for fabricating an iteratively cyclically triggered semiconductor light-emitting device, used to fabricate the iteratively cyclically triggered semiconductor light-emitting device according to claim 1, characterized in that: Specifically includes the following steps: S1. Mix the up-conversion luminescent material and the adhesive in a mass ratio of 8-12:1, and fully dissolve them in an organic volatile solvent, continuously heat and stir at 55-65°C for 20-30 hours to obtain a mixed solution; S2. Immerse the quartz substrate in the mixed solution obtained in step S1, and evaporate the organic volatile solvent by slowly evaporating the solvent to obtain an up-conversion luminescent film; S3. Fix the quartz substrate coated with the up-conversion luminescent film around the semiconductor light-emitting diode to obtain an iterative cycle triggered semiconductor light-emitting device.

9. The method of claim 8, wherein the method further comprises: Also includes step S0: sequentially ultrasonically clean the quartz substrate with dishwashing liquid, ethanol, acetone and isopropanol for 8-15 minutes, then dry it with nitrogen and treat it with ultraviolet ozone for 25-35 minutes; The up-conversion luminescent material includes any one of NaYF4:Yb,Er, ZnF2:Yb,Er or NaYF4:Yb,Tm. The adhesive includes any one of polymethyl methacrylate, polyvinylidene fluoride or polyvinyl alcohol. The organic volatile solvent is N-methyl pyrrolidone or dimethylformamide.

Citation Information

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