Ultraviolet photoelectric detector based on organic-inorganic hybrid heterojunction and preparation method thereof

Abstract

The invention discloses an organic-inorganic hybrid heterojunction-based ultraviolet photoelectric detector and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices, the detector comprises a first electrode, an S C substrate layer, a p-type layer and a second electrode from bottom to top, an organic thin film, namely the p-type layer, is prepared on the S C substrate by adopting a one-step spin-coating technology, and the p-type layer is prepared on the S C substrate layer. Therefore, a heterojunction with a vertical structure is constructed. Then, a first electrode is evaporated on the back face of the S C substrate through a thermal evaporation method, and a bottom electrode is formed; and then, through an interdigital electrode evaporation process, a second electrode is evaporated above the organic thin film to serve as a top electrode, so that the manufacturing of the photoelectric detector is completed. According to the invention, the deposition of the thin film and the preparation of the heterojunction device are realized by a thermal evaporation method and a one-step spin-coating method, the performance of the detector is excellent, the preparation process is simple and easy to implement, and the method has good compatibility with the existing S C-based semiconductor process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction and its fabrication method. Background Technology

[0002] While silicon-based ultraviolet (Si) detectors offer certain advantages in ultraviolet light detection, they also have some drawbacks. First, silicon (Si) has a narrow bandgap, resulting in relatively low detection efficiency in the ultraviolet band. Therefore, filters are typically required to eliminate interference from other wavelengths, which further reduces overall detection efficiency. Furthermore, the use of filters not only increases cost but also enlarges the final product, leading to reduced integration and making it difficult to meet modern miniaturization and integration requirements.

[0003] To address these issues, researchers have begun to focus on using wide-bandgap materials as alternatives to improve the performance of ultraviolet detectors. Among them, carbon silicide (SiC) is favored due to its excellent wide-bandgap characteristics. However, traditional SiC-pn homojunction devices require ion implantation during fabrication, which not only increases production costs but also demands higher fabrication temperatures, increasing process complexity.

[0004] Furthermore, existing ultraviolet detectors suffer from limitations in self-powered mode performance, insufficient environmental adaptability, complex and costly fabrication processes, and narrow spectral response ranges. Organic-inorganic hybrid heterojunction schemes also suffer from numerous interface defects and poor bandgap matching. However, this invention constructs organic-inorganic heterojunctions through a one-step spin-coating method, combined with self-powered design and bandgap engineering optimization, thus solving these bottlenecks and providing a practical solution for ultraviolet detection in special scenarios. Summary of the Invention

[0005] The purpose of this invention is to provide an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction and its fabrication method to solve the above-mentioned problems.

[0006] This invention provides an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, wherein the detector comprises, from bottom to top, a first electrode, a SiC substrate, a p-type layer, and a second electrode.

[0007] The p-type layer is an organic thin film prepared on the front side of a SiC substrate using a one-step spin coating method.

[0008] The first electrode forms an ohmic contact with the SiC substrate;

[0009] The second electrode forms an ohmic contact with the organic thin film.

[0010] Preferably, in the above-mentioned ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the thickness of the organic thin film is 10-200 nm; the resistivity of the SiC substrate is 0.015-0.028 Ω·cm, and the thickness is 200-400 nm.

[0011] Preferably, in the above-mentioned ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the first electrode comprises a single layer or a stack of multiple elements selected from nickel, aluminum, copper, silver, gold, platinum, gallium, indium, and scandium.

[0012] Preferably, in the above-mentioned ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the second electrode comprises a single layer or a stack of one or more of nickel, aluminum, copper, silver, gold, platinum, gallium, indium and scandium.

[0013] Preferably, in the above-mentioned ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the p-type layer comprises an organic thin film obtained by a one-step spin-coating method from P3HT, Spiro, and PTAA.

[0014] A method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction as described above is provided, comprising the following steps:

[0015] Step 1: Clean the SiC substrate;

[0016] Step 2: After cleaning, the first electrode with a thickness of 100 nm is deposited on the back of the SiC substrate using thermal evaporation.

[0017] Step 3: Prepare a precursor solution using one of the organic polymers selected from P3HT, Spiro, and PTAA with chlorobenzene;

[0018] Step 4: Clean the SiC substrate. After cleaning, prepare an organic thin film on the front side of the SiC substrate by spin-coating the precursor solution in one step. The thickness of the organic thin film is 10-200 nm.

[0019] Step 5: Anneal on a hot plate for 10-20 minutes or oxidize for 6-12 hours;

[0020] Step 6: Use the thermal evaporation method to prepare a second electrode on the surface of the organic thin film using interdigitated electrodes to obtain an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction.

[0021] Preferably, in the above-mentioned method for preparing an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the volume ratio of the organic polymer to chlorobenzene in the precursor solution in step 3 is 5:1-50:1.

[0022] Preferably, in the above-mentioned method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the conditions for preparing the organic thin film by one-step spin coating in step 4 are as follows: the organic solution is spin-coated onto the surface of the SiC substrate on a spin coating stage, the spin coating speed is 2000-5000 rpm, the spin coating time is 15-40 s, and the spin coating acceleration is 9999 pm / s.

[0023] Preferably, in the above-mentioned method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the process of cleaning the SiC substrate in steps 1 and 4 is as follows: ultrasonically clean with acetone, ethanol, and deionized water for 15 minutes each.

[0024] Preferably, in the above-mentioned method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, the thermal evaporation process in steps 2 and 6 is as follows: Using a thermal evaporation coating apparatus, the metal material used to prepare the electrode is placed in the middle of a tungsten boat, and the SiC substrate is fixed above the thermal evaporation coating apparatus. The chamber is closed and a vacuum is drawn to make the pressure inside the chamber less than 0.0001 Pa. The metal material is pre-melted into a liquid state, and after a slow evaporation process, gaseous molecules are formed and deposited on the surface of the SiC substrate to form a metal thin film. When the thickness of the thin film reaches the target, the thermal evaporation coating apparatus is closed to obtain the metal thin film electrode.

[0025] Therefore, this invention employs the aforementioned organic-inorganic hybrid heterojunction-based ultraviolet photodetector and its fabrication method. Leveraging the superior properties of SiC material, innovative methods and processes reduce production difficulty and cost, making the ultraviolet detector more suitable for large-scale applications. The organic-inorganic heterojunction ultraviolet photodetector can achieve a self-powered photoelectric detection mode, meaning it can convert optical signals to electrical signals even at zero bias. It exhibits high responsivity, high external quantum efficiency, simple fabrication method, and low operating cost, making it suitable for commercial applications and scientific research. By using interdigitated electrodes, it achieves higher efficiency, faster response, better electric field control, and lower noise. A one-step spin-coating method is used to fabricate the basic structure of the organic-inorganic heterojunction, resulting in a detector with excellent rectification and response characteristics. It combines advantages such as high-efficiency photoelectric conversion, broad spectral response, excellent high-temperature and radiation tolerance, mechanical flexibility, and low cost, making it ideal for applications requiring high temperature, high radiation, or flexible design.

[0026] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction provided in Embodiment 1 of the present invention;

[0028] Figure 2 This is a scanning electron microscope image of the P3HT thin film prepared in Example 1;

[0029] Figure 3 Here is a scanning electron microscope image of the Spiro thin film prepared in Example 2;

[0030] Figure 4 This is a scanning electron microscope image of the PTAA film prepared in Example 3;

[0031] Figure 5 The voltage-current curves of the SiC / P3HT heterojunction photodetector prepared in Example 1 at a wavelength of 300nm and a bias voltage of 0V are shown.

[0032] Figure 6 This is the time-current curve of the SiC / P3HT heterojunction photodetector prepared in Example 1 at a wavelength of 300nm and a bias voltage of 0V.

[0033] Figure 7 The voltage-current curves of the SiC / Spiro heterojunction photodetector prepared in Example 2 at a wavelength of 300 nm and a bias voltage of 0 V are shown.

[0034] Figure 8 This is the time-current curve of the SiC / Spiro heterojunction photodetector prepared in Example 2 at a wavelength of 300 nm and a bias voltage of 0 V;

[0035] Figure 9 This is the voltage-current curve of the SiC / PTAA heterojunction photodetector prepared in Example 3 at a wavelength of 300nm and a bias voltage of 0V.

[0036] Figure 10 The time-current curves of the SiC / PTAA heterojunction photodetector prepared in Example 3 at a wavelength of 300 nm and a bias voltage of 0 V are shown.

[0037] Reference numerals: 1. First electrode; 2. SiC substrate; 3. Organic thin film layer; 4. Second electrode. Detailed Implementation

[0038] To better understand the above technical solutions, a detailed description of the solutions will be provided below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0039] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a,” “the,” and “the” as used in the embodiments of this invention and the appended claims are also intended to include the plural forms, and “multiple” generally includes at least two unless the context clearly indicates otherwise.

[0040] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or device. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or device that includes said element.

[0041] This invention provides an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, wherein the detector comprises, from bottom to top, a first electrode, a SiC substrate, a p-type layer, and a second electrode.

[0042] The p-type layer is an organic thin film prepared on the front side of a SiC substrate using a one-step spin coating method.

[0043] The first electrode forms an ohmic contact with the SiC substrate;

[0044] The second electrode forms an ohmic contact with the organic thin film.

[0045] To further optimize the above technical solution, the thickness of the organic thin film is 10-200 nm; the resistivity of the SiC substrate is 0.015-0.028 Ω·cm, and the thickness is 200-400 nm.

[0046] To further optimize the above technical solution, the first electrode comprises a single layer or a stack of one or more of nickel, aluminum, copper, silver, gold, platinum, gallium, indium and scandium.

[0047] To further optimize the above technical solution, the second electrode comprises a single layer or a stack of one or more of nickel, aluminum, copper, silver, gold, platinum, gallium, indium and scandium.

[0048] To further optimize the above technical solution, the p-type layer includes an organic thin film obtained by one of P3HT, Spiro, and PTAA through a one-step spin coating method.

[0049] A method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction as described above is provided, comprising the following steps:

[0050] Step 1: Clean the SiC substrate;

[0051] Step 2: After cleaning, the first electrode with a thickness of 100 nm is deposited on the back of the SiC substrate using thermal evaporation.

[0052] Step 3: Prepare a precursor solution using one of the organic polymers selected from P3HT, Spiro, and PTAA with chlorobenzene;

[0053] Step 4: Clean the SiC substrate. After cleaning, prepare an organic thin film on the front side of the SiC substrate by spin-coating the precursor solution in one step. The thickness of the organic thin film is 10-200 nm.

[0054] Step 5: Anneal on a hot plate for 10-20 minutes or oxidize for 6-12 hours;

[0055] Step 6: Use the thermal evaporation method to prepare a second electrode on the surface of the organic thin film using interdigitated electrodes to obtain an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction.

[0056] To further optimize the above technical solution, the volume ratio of the organic polymer to chlorobenzene in the precursor solution in step 3 is 5:1-50:1.

[0057] To further optimize the above technical solution, the conditions for preparing organic thin films by one-step spin coating in step 4 are as follows: the organic solution is spin-coated onto the surface of the SiC substrate on a spin coating stage, the spin coating speed is 2000-5000 rpm, the spin coating time is 15-40 s, and the spin coating acceleration is 9999 pm / s.

[0058] To further optimize the above technical solution, the cleaning process of the SiC substrate in steps 1 and 4 is as follows: ultrasonically clean with acetone, ethanol and deionized water for 15 minutes each.

[0059] To further optimize the above technical solution, the thermal evaporation process in steps 2 and 6 is as follows: Using a thermal evaporation coating instrument, the metal material used to prepare the electrode is placed in the middle of a tungsten boat, and the SiC substrate is fixed above the thermal evaporation coating instrument. The chamber is closed and a vacuum is drawn to make the pressure inside the chamber less than 0.0001 Pa. The metal material is pre-melted into a liquid state, and after a slow evaporation process, gaseous molecules are formed and deposited on the surface of the SiC substrate to form a metal thin film. When the thickness of the thin film reaches the target, the thermal evaporation coating instrument is turned off to obtain the metal thin film electrode.

[0060] To more clearly and in detail introduce the ultraviolet photodetector based on organic-inorganic hybrid heterojunction and its fabrication method provided in the embodiments of the present invention, the following description will be based on specific embodiments.

[0061] Example 1

[0062] A vertical SiC / P3HT photodetector, from bottom to top, consists of a first electrode 1, a SiC substrate layer 2, a p-type layer 3, and a second electrode 4;

[0063] A self-driven photodetector based on a SiC / P3HT vertical heterojunction and its fabrication method thereof, comprising the following steps:

[0064] (1) Preparation of electrodes

[0065] First, clean the SiC substrate by ultrasonic cleaning with acetone, ethanol, and deionized water for 15 minutes each. After cleaning, obtain the first electrode on the back side of the SiC substrate using a thermal evaporation method.

[0066] (2) Preparation of P3HT solution

[0067] Add 10 mg of P3HT to 1 mL of chlorobenzene solution, place on a stirring table to accelerate the dissolution of P3HT, and filter to obtain P3HT solution after the solution is completely clear.

[0068] (3) Preparation of SiC / P3HT heterojunction

[0069] First, the SiC substrate was cleaned using the same method as in step 1. Then, the silicon carbide substrate was subjected to plasma hydrophilic treatment for 20 minutes and placed on a spin coater. 50 μL of the prepared P3HT solution was dropped onto the SiC substrate and spin-coated on the silicon carbide at 3000 rpm for 30 seconds. Finally, it was placed on a hot stage at 120°C for 10 minutes for annealing to obtain a SiC / P3HT heterojunction.

[0070] (4) Preparation of SiC / P3HT organic-inorganic hybrid heterojunction photodetector

[0071] A second electrode was fabricated on a P3HT thin film using an interdigitated electrode via thermal evaporation, resulting in a P3HT thin film detector.

[0072] (5) Test

[0073] Place the sample on the probe stage, with the upper electrode positioned as follows: Figure 1 The electrode indicated by 4 is the lower electrode. Figure 1 The electrode indicated by 1 in the diagram yields both dark current and photocurrent under 300nm illumination, as shown below. Figure 5 As shown, by comparing the voltage corresponding to the bottom spike of the dark current with that of the photocurrent, the open-circuit voltage of the device is shifted to the right, thus proving that the device has a built-in electric field.

[0074] When the applied voltage is 0V, its time-current curve under periodic light switch illumination is as follows: Figure 6 As shown, the device's excellent performance can be demonstrated by its standard square wave shape.

[0075] like Figure 1 As shown, light incident from one side of the P3HT thin film can enhance the photoresponse of the detector.

[0076] Example 2

[0077] (1) The preparation of the first electrode is the same as in Example 1.

[0078] (2) The preparation of SiC / Spiro heterojunctions is as follows:

[0079] 72.3 mg Spiro was dissolved in 17.5 μL of lithium salt, 29 μL of TBP, and 1 mL of chlorobenzene solution. The solution was placed on a stirring table to accelerate the dissolution of Spiro. After the solution was completely clear, it was filtered to obtain the Spiro solution.

[0080] (3) Preparation of SiC / Spiro heterojunction

[0081] First, the SiC substrate was cleaned using the same method as in step 1. Then, the SiC substrate underwent plasma hydrophilic treatment for 20 minutes and was placed on a spin coater. 50 μL of the prepared Spiro solution was dropped onto the SiC substrate and spin-coated onto silicon carbide at 3000 rpm for 20 seconds. Finally, it was placed in a dehumidifying cabinet for oxidation for 12 hours to obtain a SiC / Spiro heterojunction.

[0082] (4) The preparation of the second electrode is the same as in Example 1.

[0083] (5) Test

[0084] A SiC / Spiro heterojunction photodetector was prepared by spin coating at 3000 rpm. A pair of electrodes was selected, and tests were conducted under both dark and illuminated conditions. The obtained current-voltage curves are shown below. Figure 7 As shown, the dark current exhibits a typical rectification effect, indicating the formation of a heterojunction PN junction. The photocurrent shows a significant photovoltaic effect. Under 300nm illumination, the short-circuit current is 48nA and the open-circuit voltage is 0.15V, indicating that the fabricated SiC / P3HT heterojunction photodetector can operate under self-powered conditions.

[0085] When the applied voltage is 0V, its time-current curve under periodic light switch illumination is as follows: Figure 8 As shown, the device's excellent performance can be demonstrated by its standard square wave shape.

[0086] Example 3

[0087] (1) The preparation of the first electrode is the same as in Example 1.

[0088] (2) The preparation of SiC / PTAA heterojunctions is as follows:

[0089] Dissolve 5 mg of PTAA in 1 mL of chlorobenzene solution, place on a stirring table to accelerate the dissolution of PTAA, and filter to obtain PTAA solution after the solution is completely clear.

[0090] (3) Preparation of SiC / PTAA heterojunction

[0091] First, the SiC substrate was cleaned using the same method as in step 1. Then, the SiC substrate underwent plasma hydrophilic treatment for 20 minutes and was placed on a spin coater. 50 μL of the prepared PTAA solution was dropped onto the SiC substrate, and the substrate was spin-coated on silicon carbide at 3500 rpm for 30 seconds. Finally, the substrate was placed in a dehumidifying cabinet for oxidation for 12 hours to obtain a SiC / PTAA heterojunction.

[0092] (4) The preparation of the second electrode is the same as in Example 1.

[0093] (5) Test

[0094] A SiC / PTAA heterojunction photodetector was prepared by spin coating at 3500 rpm. A pair of electrodes was selected, and tests were conducted under both dark and illuminated conditions. The obtained current-voltage curves are shown below. Figure 9 As shown, the dark current exhibits a typical rectification effect, indicating the formation of a heterojunction PN junction. The photocurrent shows a significant photovoltaic effect. Under 300nm illumination, the short-circuit current is 188nA and the open-circuit voltage is 0.74V, indicating that the fabricated SiC / P3HT heterojunction photodetector can operate under self-powered conditions.

[0095] When the applied voltage is 0V, its time-current curve under periodic light switch illumination is as follows: Figure 10 As shown, the device's excellent performance can be demonstrated by its standard square wave shape.

[0096] The test results from the embodiments demonstrate that the organic-inorganic heterojunction photodetector prepared according to the present invention is a high-performance self-powered ultraviolet photodetector.

[0097] This invention constructs an organic-inorganic hybrid heterojunction using a highly doped n-type SiC substrate and improved organic materials, providing a high-performance, self-powered organic-inorganic hybrid heterojunction ultraviolet photodetector. The constructed organic-inorganic hybrid heterojunction forms a space charge layer at the heterojunction interface, generating a built-in voltage that drives photon-induced electron-hole pair self-separation, achieving photoelectric conversion without external energy supply. This enables the fabricated organic-inorganic hybrid heterojunction photodetector to operate in a self-powered mode. The high electron concentration of the highly doped SiC photosensitive layer increases the probability of photon-induced electron-hole pair formation. The improved organic materials and precisely controlled spin-coating process enhance the heterojunction interface quality, resulting in a large built-in voltage and improved electron-hole pair separation capability. The organic-inorganic hybrid heterojunction self-powered ultraviolet photodetector provided by this invention exhibits high responsivity, high external quantum efficiency, simple fabrication method, and low operating cost, making it suitable for practical applications and scientific research.

[0098] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the technical solutions of the present invention, and these modifications or equivalent substitutions cannot cause the modified technical solutions to deviate from the spirit and scope of the technical solutions of the present invention.

Claims

1. An ultraviolet photodetector based on an organic-inorganic hybrid heterojunction, characterized in that, The detector consists of, from bottom to top, a first electrode, a SiC substrate, a p-type layer, and a second electrode. The p-type layer is an organic thin film prepared on the front side of a SiC substrate using a one-step spin coating method. The first electrode forms an ohmic contact with the SiC substrate; The second electrode forms an ohmic contact with the organic thin film.

2. The ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 1, characterized in that, The organic thin film has a thickness of 10-200 nm; the SiC substrate has a resistivity of 0.015-0.028 Ω·cm and a thickness of 200-400 nm.

3. The ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 1, characterized in that, The first electrode comprises a single layer or a stack of one or more of nickel, aluminum, copper, silver, gold, platinum, gallium, indium and scandium.

4. The ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 1, characterized in that, The second electrode comprises a single layer or a stack of one or more of nickel, aluminum, copper, silver, gold, platinum, gallium, indium and scandium.

5. The ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 1, characterized in that, The p-type layer includes an organic thin film obtained by one of P3HT, Spiro, and PTAA through a one-step spin coating method.

6. A method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction as described in claim 1, characterized in that, Includes the following steps: Step 1: Clean the SiC substrate; Step 2: After cleaning, the first electrode with a thickness of 100 nm is deposited on the back of the SiC substrate using thermal evaporation. Step 3: Prepare a precursor solution using one of the organic polymers selected from P3HT, Spiro, and PTAA with chlorobenzene; Step 4: Clean the SiC substrate. After cleaning, prepare an organic thin film on the front side of the SiC substrate by spin-coating the precursor solution in one step. The thickness of the organic thin film is 10-200 nm. Step 5: Anneal on a hot plate for 10-20 minutes or oxidize for 6-12 hours; Step 6: Use the thermal evaporation method to prepare a second electrode on the surface of the organic thin film using interdigitated electrodes to obtain an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction.

7. The method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 6, characterized in that, In step 3, the volume ratio of the organic polymer to chlorobenzene in the precursor solution is 5:1 to 50:

1.

8. The method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 6, characterized in that, The conditions for preparing the organic thin film by one-step spin coating in step 4 are as follows: the organic solution is spin-coated onto the surface of the SiC substrate on a spin coating stage, the spin coating speed is 2000-5000 rpm, the spin coating time is 15-40 s, and the spin coating acceleration is 9999 pm / s.

9. The method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 6, characterized in that, The process of cleaning the SiC substrate in steps 1 and 4 is as follows: ultrasonically clean with acetone, ethanol, and deionized water for 15 minutes each.

10. The method for fabricating an ultraviolet photodetector based on an organic-inorganic hybrid heterojunction according to claim 6, characterized in that, The thermal evaporation process in steps 2 and 6 is as follows: Using a thermal evaporation coating instrument, the metal material used to prepare the electrode is placed in the middle of a tungsten boat, and the SiC substrate is fixed above the thermal evaporation coating instrument. The chamber is closed and a vacuum is drawn to make the pressure inside the chamber less than 0.0001 Pa. The metal material is pre-melted into a liquid state, and after a slow evaporation process, gaseous molecules are formed and deposited on the surface of the SiC substrate to form a metal thin film. When the thickness of the thin film reaches the target, the thermal evaporation coating instrument is turned off to obtain the metal thin film electrode.

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