One-stop semiconductor carrier cleaning method and system

Abstract

The invention provides a one-stop semiconductor carrier cleaning method and system. The method comprises the steps of disassembly, classification, nanometer bubble cleaning, negative pressure vacuum drying and the like. The system comprises a plurality of cleaning tanks, a nano bubble device, a dehydration device and a negative pressure vacuum drying device. Through one-stop integration of the steps of disassembly, classification, nano bubble cleaning, negative pressure vacuum drying and the like, pollutants and organic compounds of the semiconductor carrier can be effectively removed, and the method is suitable for cleaning the semiconductor carrier.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor carrier cleaning method and system, in particular, to a one-stop semiconductor carrier cleaning method and system. BACKGROUND

[0002] The semiconductor industry often uses semiconductor carriers to protect, store and carry semiconductor workpieces. The interior of the semiconductor process container can be contaminated due to various factors such as process and environment, and thus needs to be cleaned. The semiconductor workpieces can be wafers, masks, PCBs, carrier boards or other electronic components, etc. The semiconductor carriers can be wafer transfer boxes, mask transfer boxes, PCB transfer boxes or other electronic component transfer boxes, such as Front Opening Unified Pod (FOUP), etc.

[0003] These semiconductor carriers can be contaminated due to various factors such as process and environment. Since the semiconductor processing equipment and the semiconductor carriers need to maintain a very high cleanliness, the semiconductor carriers need to be cleaned to maintain their cleanliness and improve the yield of the semiconductor process.

[0004] However, the prior art mostly uses many stations for cleaning, dehydration, drying, etc. when cleaning semiconductor carriers. Each existing station performs a single function, so that to complete the semiconductor carrier and its components, each station needs to be moved to perform different function processes, resulting in complicated processes and the need to spend moving time and occupy equipment space. In addition, the semiconductor carriers and their components are mostly dried after being rinsed with deionized water (DIW), but this method has limited cleaning effect and is difficult to further improve the problem of residual harmful gases such as volatile organic compounds (VOC), toluene and isopropyl alcohol.

[0005] Therefore, it is crucial to provide a semiconductor carrier cleaning method and system that is fast, multifunctional, can effectively remove volatile organic compounds (VOC), toluene and isopropyl alcohol, and can improve the cleaning effect of semiconductor carriers. SUMMARY

[0006] Therefore, the semiconductor carrier cleaning method and semiconductor carrier cleaning system provided by the present application can effectively achieve a one-stop complete cleaning process in a set of cleaning systems. In addition to being able to clean the components of each semiconductor carrier differently, it can also effectively remove residual pollutants and volatile organic compounds, while reducing the space required for configuring cleaning equipment and the length of the substation cleaning program.

[0007] An embodiment of the present application provides a one-stop semiconductor carrier cleaning method, which comprises the following steps: a disassembling step, in which a semiconductor carrier to be cleaned is disassembled into a plurality of components; a classifying step, in which the plurality of components are classified and respectively placed into corresponding cleaning tanks; a nano-bubble cleaning step, in which the components in each cleaning tank are cleaned according to a cleaning procedure set by the characteristics of the components to be cleaned; and a negative pressure vacuum drying step, in which the components in each cleaning tank are dried.

[0008] In an embodiment, in the nano-bubble cleaning step, a nano-bubble device is used to deliver cleaning liquid into the cleaning tank to perform overall cleaning of the micro-pores of the components.

[0009] In an embodiment, the cleaning liquid is deionized water mixed with carbon dioxide, ozone or ammonia.

[0010] In an embodiment, in the nano-bubble cleaning step, an ultrasonic vibration device is arranged in the cleaning tank to generate high-frequency acoustic wave vibration to agitate the cleaning liquid in the cleaning tank to perform ultrasonic vibration cleaning of the components.

[0011] In an embodiment, in the nano-bubble cleaning step, a heating device is arranged in the cleaning tank to heat the cleaning liquid in the cleaning tank.

[0012] In an embodiment, after the cleaning liquid is heated, a soaking step is further included, in which the components are soaked until a preset cleaning condition is reached, and the preset cleaning condition is that the components are cleaned by more than 50%.

[0013] In an embodiment, in the nano-bubble cleaning step, the cleaning procedure is controlled and parameters are set by a back-end system, according to which the cleaning conditions of all different types of components are met.

[0014] In an embodiment, in the nano-bubble cleaning step, a flooding step is further included to circulate and replace the cleaning liquid in the cleaning tank.

[0015] In an embodiment, before the negative pressure vacuum drying step, a dewatering step is further included to empty the cleaning liquid in the cleaning tank and remove part of the liquid attached to the components.

[0016] Another embodiment of the present application provides a one-stop semiconductor carrier cleaning system for cleaning a semiconductor carrier, the semiconductor carrier including a plurality of components of different categories, the semiconductor carrier cleaning system comprising: a plurality of cleaning tanks, each cleaning tank configured for a different category of components; and at least one nano-bubble device coupled to the cleaning tanks, the nano-bubble device configured to deliver cleaning liquid to at least one of the cleaning tanks for performing a thorough cleaning of the components; wherein the cleaning tank comprises: at least one dewatering device disposed in the cleaning tank, the dewatering device configured to evacuate the cleaning liquid in the cleaning tank and to remove residual liquid attached to the components; and at least one negative pressure vacuum drying device disposed in the cleaning tank, the negative pressure vacuum drying device configured to dry the components in the cleaning tank; wherein the cleaning tank, the nano-bubble device, the dewatering device, and the negative pressure vacuum drying device are sequentially operated to complete the cleaning and drying processes of the components in one stop.

[0017] In one embodiment, the semiconductor carrier cleaning system further comprises a disassembling device configured to disassemble the components of different categories from the semiconductor carrier and to deliver the components to the corresponding cleaning tanks.

[0018] In one embodiment, the semiconductor carrier cleaning system further comprises at least one ultrasonic vibration device disposed in the cleaning tank, the ultrasonic vibration device configured to generate high-frequency acoustic waves to agitate the cleaning liquid in the cleaning tank for performing an ultrasonic vibration cleaning of the components.

[0019] In one embodiment, the semiconductor carrier cleaning system further comprises at least one heating device disposed in the cleaning tank, the heating device configured to heat the cleaning liquid in the cleaning tank.

[0020] In one embodiment, the semiconductor carrier cleaning system further comprises a backend system configured to control the cleaning tank, the nano-bubble device, the dewatering device, and the negative pressure vacuum drying device to be sequentially operated to complete the cleaning and drying processes of the components in one stop.

[0021] In one embodiment, each cleaning tank comprises an overflow port, the overflow port and the nano-bubble device defining a circulation space in the cleaning tank for circulating and replacing the cleaning liquid in the cleaning tank.

[0022] In one embodiment, the cleaning liquid is deionized water mixed with carbon dioxide, ozone, or ammonia.

[0023] The semiconductor carrier cleaning method and system of the present application can improve the cleaning effect of the semiconductor carrier, further improve the problem of harmful substances such as volatile organic compounds, toluene, and isopropyl alcohol remaining in the semiconductor carrier, and effectively achieve a one-stop complete cleaning process in a set of cleaning systems, and can perform differential cleaning for each semiconductor carrier and its components, and also achieve the effect of reducing the space required for configuring cleaning equipment and the length of the operation time of the substation cleaning program. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 A flowchart of a semiconductor carrier cleaning method according to an embodiment of the present application;

[0025] Figures 2A to 2E A flowchart of a nanobubble cleaning step of a semiconductor carrier cleaning method according to an embodiment of the present application;

[0026] Figure 3 A flowchart of a semiconductor carrier cleaning method according to an embodiment of the present application;

[0027] Figure 4 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0028] Figure 5 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0029] Figure 6 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0030] Figure 7 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0031] Figure 8 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0032] Figure 9 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0033] Figure 10 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application;

[0034] Figure 11 A block diagram of a semiconductor carrier cleaning system according to an embodiment of the present application.

[0035] Reference numerals

[0036] 10 semiconductor carrier cleaning system

[0037] 100 cleaning tank

[0038] 110 overflow port

[0039] 200 nanobubble device

[0040] 210 liquid conduit

[0041] 220 gas conduit

[0042] 300 dewatering device

[0043] 400 negative pressure vacuum drying device

[0044] 500 disassembling device

[0045] 600 ultrasonic vibration device

[0046] 700 heating device

[0047] 800 backend system

[0048] CF cleaning fluid

[0049] C1 first component

[0050] C2 second component

[0051] C3 third component

[0052] SC semiconductor carrier

[0053] S100-S400 steps

[0054] S310-S350 steps

[0055] S390 step DETAILED DESCRIPTION

[0056] To further explain the technical content of the present application, the following will be further described in combination with the embodiments and the drawings. Those skilled in the art can understand the purpose, features and effects of the present application from the content disclosed in the present specification. It should be noted that the present application can be implemented or applied by other different specific embodiments, and each detail in the present specification can be modified and changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. The following embodiments will further describe the related technical content of the present application in detail, but the disclosed content is not intended to limit the scope of the patent application of the present application.

[0057] It should be noted that in the content herein, terms such as "first", "second" and "third" are used to distinguish the differences between elements, not to limit the elements themselves or represent the specific order of the elements. In addition, in the content herein, the article "a" refers to one element or more than one element without specifically indicating the specific number. Also, each step described in the present application can be executed in sequence, in reverse order, or by appropriately changing or skipping the order during control processing. In addition, it should be noted that "the first step can be executed after the second step" described in the present application can be represented as "the first step is executed directly after the second step is executed" and / or "another step (e.g. the third step) is executed first after the second step is executed, and then the first step is executed".

[0058] Furthermore, the term "coupled" as described in this application may mean "directly connected" and / or "indirectly connected". Specifically, "the first element is configured to be coupled to the second element" may mean "the first element is configured to be directly connected to the second element" and / or "the first element is configured to be indirectly connected to the second element".

[0059] One embodiment of the present invention discloses a one-stop semiconductor carrier cleaning method, applicable to cleaning carriers, containers and related components in semiconductor manufacturing processes, such as carriers (also referred to herein as "containers") for wafer transfer boxes, photomask transfer boxes, substrate transfer boxes or other components in semiconductor manufacturing processes, as well as housings, boxes, supports, limiters, doors, trays, etc. of carriers, but not limited to the examples herein.

[0060] Figure 1 This is a schematic flowchart of a semiconductor carrier cleaning method according to an embodiment of the present invention. Figures 2A to 2E This is a schematic diagram of a sub-process of the nanobubble cleaning step in a semiconductor carrier cleaning method according to an embodiment of the present invention.

[0061] refer to Figure 1 The semiconductor carrier cleaning method provided by this invention is applicable, for example, to be performed in an electronic device, and the method can be specifically implemented through methods such as... Figure 1 Steps S100 to S400 are performed to complete a one-stop cleaning process, enabling differentiated cleaning of each semiconductor carrier and its components and effectively removing residual contaminants and volatile organic compounds. The step numbers are for illustrative purposes only and do not limit the order of operation. The electronic device can be a desktop computer, laptop computer, tablet computer, workstation, server, cloud server, smartphone, etc., or a microcomputer, processor, circuit board, CPU, etc. The electronic device can directly or indirectly provide a user interface for user operation. It can also indirectly perform the above method through telecommunication transmission with other electronic devices, or the electronic devices can operate collaboratively. Furthermore, the electronic device may include output modules providing visual display, auditory output, such as monitors, touch screens, control panels, projectors, stereoscopic projectors, speakers, telephone voice, etc.; and input modules such as keyboards, mice, handles, touch screens, motion detection, voice recognition, etc. However, it should be noted that the method is not limited to the above-mentioned electronic devices.

[0062] The process of a semiconductor carrier cleaning method in one embodiment of the present invention will be described next.

[0063] refer to Figure 1, step S100 is a disassembling step, disassembling the semiconductor carrier to be cleaned into a plurality of components. In an embodiment, the semiconductor carrier is, for example, a front opening unified pod (FOUP), and the plurality of components disassembled are, for example, a pod body and a cover body of the FOUP, wherein the pod body is used to place a wafer, and the cover body is used to cover the pod body, but the disassembled components are not limited to this example, and in some embodiments, they can be further disassembled into different components. Through the disassembling step, the semiconductor carrier can be disassembled into different components, and the different components have different characteristics, such as size, shape, physical properties, and chemical properties, etc., and the different components have corresponding different subsequent processing procedures.

[0064] Referring to Figure 1 , step S200 is a classification step, classifying the plurality of components and placing them in the cleaning tank of the corresponding category. In an embodiment, the semiconductor carrier cleaning method provides at least one cleaning tank for placing components of the corresponding category, which can be preset, for example, the pod body of the semiconductor carrier is the first category, and the cover body of the semiconductor carrier is the second category, but not limited to this example. In this way, through the classification step, the components disassembled by the disassembling step can be classified and placed in the cleaning tank of the corresponding category according to the classification result, so that different categories of components are placed in different cleaning tanks, which facilitates subsequent cleaning procedures for different components.

[0065] Referring to Figure 1 , step S300 is a nanobubble cleaning step, cleaning the components in each cleaning tank according to the cleaning procedure set by the characteristics of the components to be cleaned in each cleaning tank. In an embodiment, different components to be cleaned have corresponding different cleaning procedures, such as different cleaning time, cleaning intensity, etc., that is, different cleaning tanks have different cleaning procedures, but the components can also have the same cleaning procedure according to their category and properties, and the cleaning procedure can be preset according to the characteristics of different components. In an embodiment, the nanobubble cleaning step, for example, uses a nanobubble generator to generate fine bubbles, such as ultra-fine bubbles (UFB), etc., to remove contaminants, chemicals, etc. from the components to be cleaned through the fine bubbles.

[0066] Referring to Figure 1 and Figure 2AIn one embodiment, the nanobubble cleaning step S300 further comprises a sub-step S310 of delivering cleaning liquid to the one or more cleaning tanks by the nanobubble device to perform a thorough cleaning of the micro-pores of the components, wherein the cleaning liquid is a cleaning liquid with nanobubbles. In one embodiment, the cleaning liquid is deionized water mixed with carbon dioxide, ozone and / or ammonia. It is noted that the nanobubble cleaning step can provide cleaning liquid with different properties, such as different number of nanobubbles, different flow rate, different pressure, different bubble size, for different components, different component properties and different cleaning procedures, to provide different cleaning effects for different components, but not limited to this example.

[0067] Reference is made to Figure 1 Step S400 is a negative pressure vacuum drying step to dry the components inside the cleaning tanks. In one embodiment, each cleaning tank is equipped with a drying device, such as a negative pressure vacuum drying device, and the drying step can be performed by temperature, air blowing, or other means, or assisted by negative pressure and / or vacuum, to dry the components in the cleaning tanks. In one embodiment, the negative pressure vacuum drying step can be performed after the nanobubble cleaning step to dry the cleaned components. In one embodiment, the negative pressure vacuum drying step can be performed before the nanobubble cleaning step to pre-bake the components, such as to release volatile organic compounds attached to the components or surface, and then the nanobubble cleaning step can more effectively remove the volatile organic compounds. In one embodiment, the negative pressure vacuum drying step can be performed before and after the nanobubble cleaning step to pre-bake the components and dry the cleaned components.

[0068] In one embodiment, the aforementioned steps S100 to S400 can be completed by a single machine or a single station, so as to achieve a one-stop integrated cleaning of the semiconductor carrier, to improve the cleaning efficiency, and reduce the space required for the cleaning station and the length of the cleaning procedure. At the same time, through the aforementioned steps S100 to S400, different cleaning can be provided for different component properties, to effectively remove contaminants and / or volatile organic compounds from each component.

[0069] Reference is made to Figure 1 and Figure 2BIn one embodiment, the nanobubble cleaning step S300 further comprises a sub-step S320 of cleaning the component by ultrasonic vibration. In one embodiment, the ultrasonic vibration device is arranged in the cleaning tank to generate high-frequency acoustic wave vibration to agitate the cleaning liquid in the cleaning tank, thereby enhancing the cleaning of the component by ultrasonic vibration to improve the efficiency of removing the contaminant and chemical substance on the component. In one embodiment, the frequency of the ultrasonic vibration generated by the ultrasonic vibration device is adjustable and can be adjusted according to the properties of different components.

[0070] Referring to Figure 1 and Figure 2C In one embodiment, the nanobubble cleaning step S300 further comprises a sub-step S330 of heating the cleaning liquid in the cleaning tank. In one embodiment, the heating device, such as an electric heater, a heating plate, a hot steam generating device, etc., is arranged in the cleaning tank to heat the cleaning liquid in the cleaning tank, thereby improving the efficiency of removing the contaminant and chemical substance on the component. In one embodiment, the temperature of the heating is adjustable and can be adjusted according to the properties of different components.

[0071] Referring to Figure 1 and Figure 2D In one embodiment, the nanobubble cleaning step S300 further comprises a sub-step S340 of soaking the component until a preset decontamination condition is reached. The preset decontamination condition is that the component is decontaminated by more than 50%, but is not limited thereto. Different preset decontamination conditions can be set for different types of components and corresponding different cleaning tanks. In one embodiment, after the heating step S330, the soaking step S340 is performed in sequence to continuously soak the component in the cleaning liquid in the cleaning tank until the preset decontamination condition is reached. In one embodiment, the decontamination condition is that the component is decontaminated by more than 50%. In one embodiment, the soaking step S340 can be performed alone and is not limited to being performed in sequence with the heating step S330. In this way, the soaking step can increase the action time of the cleaning liquid and the contaminant and chemical substance on the component, thereby improving the cleaning effect. In one embodiment, the soaking step can be assisted by the input of the ultrasonic vibration and / or nanobubbles described above to improve the decontamination effect during soaking.

[0072] Referring to Figure 1 and Figure 2EIn one embodiment, the nanobubble cleaning step S300 further comprises a sub-step S350: overflow step, for circulating and replacing the cleaning liquid in the cleaning tank. In one embodiment, the cleaning tank is provided with an overflow port for discharging the cleaning liquid from the cleaning tank, while the cleaning liquid in the cleaning tank is continuously inputted, so as to circulate and replace the cleaning liquid in the cleaning tank, thereby discharging the cleaning liquid containing contaminants and / or chemicals, and replacing it with clean cleaning liquid, so as to avoid secondary contamination of the components and improve the cleaning effect.

[0073] Figure 3 A flowchart of a semiconductor carrier cleaning method according to one embodiment of the present application.

[0074] Reference Figure 3 In one embodiment, the semiconductor carrier cleaning method according to one embodiment of the present application further comprises a dehydration step S390, which is performed before the negative pressure vacuum drying step S400. The dehydration step S390 is to empty the cleaning liquid in the cleaning tank and remove the liquid attached to the components. In one embodiment, after the components pass through the nanobubble cleaning step S300, the dehydration step S390 is performed to empty the cleaning liquid in the cleaning tank, and the components are spun dry by a centrifugal force generating mechanism, for example, a fixture holding the components to rotate and spin dry, etc. In this way, the cleaning liquid in the cleaning tank and the components can be removed in advance before the negative pressure vacuum drying step S400, so as to improve the subsequent drying efficiency.

[0075] In one embodiment, the cleaning process in the nanobubble cleaning step S300 is controlled and set by a backend system, so as to correspond to the cleaning conditions of all different types of components. In one embodiment, the backend system can be any of the aforementioned embodiments of the electronic device, so as to provide a device and / or user interface for controlling and setting parameters, and can be signal coupled to the devices and equipment corresponding to the aforementioned steps, and can store at least one cleaning process corresponding to different types of components, so as to perform the steps of the aforementioned semiconductor carrier cleaning method, and can control the steps to be performed in sequence.

[0076] Based on the above, the cleaning tank provided by the semiconductor carrier cleaning method in an embodiment of the present application can have one-stop integrated functions of cleaning, heating, dehydration, drying, negative pressure vacuum baking, etc. Each function can provide a cleaning process with different parameter settings according to the characteristics of different components, so as to improve the cleaning effect. For example, when performing the functions of steam heating, drying, or negative pressure vacuum baking, different parameter settings can be provided for the corresponding cleaning tank to perform different cleaning processes according to the different heat resistance of each component, so as to improve the cleaning ability of each component. In addition, the order of performing each function provided by the semiconductor carrier cleaning method is not limited. For example, for a specific component, the order of performing the cleaning tank can be cleaning, dehydration, and baking. For another component, the order of performing the cleaning tank can be baking, cleaning, dehydration, and drying. In this way, after the component is first baked, the substances such as volatile organic compounds inside the component can be released onto the surface of the component, and then when the component is cleaned with cleaning liquid, the substances on the surface can be removed, thereby improving the cleaning effect. Furthermore, the steps provided by the semiconductor carrier cleaning method in an embodiment of the present application enable each cleaning step to be completed at the same station, and various function steps are integrated, thereby improving the cleaning efficiency of the semiconductor carrier.

[0077] Figures 4 to 9 A block schematic diagram of a semiconductor carrier cleaning system in embodiments of the present application.

[0078] Reference Figure 4 Another embodiment of the present application provides a semiconductor carrier cleaning system 10 for cleaning a semiconductor carrier SC, wherein the semiconductor carrier SC includes a plurality of components of different categories, such as a first component C1, a second component C2, a third component, etc. The components can be, but are not limited to, a box body and a cover body of the semiconductor carrier SC.

[0079] Reference Figure 4 The semiconductor carrier cleaning system 10 includes a plurality of cleaning tanks 100, at least one nano-bubble device 200, at least one dehydration device 300, and at least one negative pressure vacuum drying device 400.

[0080] In an embodiment, each of the plurality of cleaning tanks 100 is configured to accommodate components of different categories, such as Figure 4 As shown in the figure, some cleaning tanks 100 are configured to accommodate the first components C1, some cleaning tanks 100 are configured to accommodate the second components C2, and some cleaning tanks 100 are configured to accommodate the third components C3. Different components have different corresponding properties, such as different sizes, different structural strengths, and different heat resistances.

[0081] In one embodiment, the nanobubble device 200 is coupled to the cleaning tank 100, and the nanobubble device 200 is used to deliver the cleaning fluid CF to at least one of the cleaning tanks 100 for performing the cleaning of the micro-pores of the components (e.g. the first component C1, the second component C2, etc.). In one embodiment, each of the cleaning tanks 100 is configured with a corresponding nanobubble device 200. In one embodiment, one nanobubble device 200 can be configured to provide the cleaning fluid CF to a plurality of cleaning tanks 100. In one embodiment, the nanobubble device 200 is used to generate ultra-fine bubbles (UFB) and dissolve the ultra-fine bubbles in the cleaning fluid CF, so that the contaminants, chemicals, etc. can be carried away from the components to be cleaned by the ultra-fine bubbles. In one embodiment, the cleaning fluid CF is deionized water mixed with carbon dioxide, ozone and / or ammonia. In one embodiment, the nanobubble device 200 can provide different cleaning processes for different components in different cleaning tanks 100, different component characteristics, etc. For example, the nanobubble device 200 can provide different cleaning fluids CF with different properties, such as different amounts of ultra-fine bubbles, different flow rates, different pressures, different bubble sizes, etc. to provide different cleaning effects for different components, but not limited to this example.

[0082] In one embodiment, the cleaning tank 100 includes at least one dewatering device 300 and at least one negative pressure vacuum drying device 400. The dewatering device 300 is configured in the cleaning tank 100, and the dewatering device 300 is used to drain the cleaning fluid CF in the cleaning tank 100 and remove the liquid attached to the components. The negative pressure vacuum drying device 400 is configured in the cleaning tank 100, and the negative pressure vacuum drying device 400 is used to dry the components (e.g. the first component C1, the second component C2, etc.) in the cleaning tank 100. The configuration in the cleaning tank 100 means that the dewatering device 300 and the negative pressure vacuum drying device 400 can be configured in the cleaning tank 100, or integrated with the cleaning tank 100, such as beside the cleaning tank 100. In one embodiment, the dewatering device 300 is used to spin dry the components by rotating the components to generate centrifugal force, for example, by using a fixture to hold the components and rotate the components to spin dry the components. In one embodiment, the negative pressure vacuum drying device 400 is used to dry the components in the cleaning tank 100 by using temperature, air blowing, negative pressure and / or vacuum, etc.

[0083] In one embodiment, the cleaning tank 100, the nano-bubble device 200, the dehydration device 300, and the negative pressure vacuum drying device 400 are sequentially operated, and the process of cleaning the components (e.g., the first component C1, the second component C2, etc.) in the cleaning tank 100 from cleaning to drying is completed in one station. In this way, in addition to improving the cleaning effect of the semiconductor carrier, further improving the problem of harmful substances such as contaminants and volatile organic compounds remaining on the semiconductor carrier, and effectively achieving a one-station complete cleaning process in a set of semiconductor carrier cleaning systems, the effect of reducing the space required for the configuration of the cleaning equipment and the length of the operation time of the substation cleaning process is achieved.

[0084] Referring to Figure 5 In one embodiment, the semiconductor carrier cleaning system 10 includes a disassembling device 500 that disassembles different types of components (e.g., the first component C1, the second component C2, the third component C3, etc.) of the semiconductor carrier SC and classifies and transports the components to the corresponding cleaning tank 100. In one embodiment, the semiconductor carrier SC is, for example, a front opening unified pod (FOUP), and the disassembled components are, for example, the pod body (e.g., the first component C1) and the cover body (e.g., the second component C2) of the front opening unified pod, but the disassembled components are not limited to this example, and in some embodiments, they can be further disassembled into different components. By the disassembling device 500, the semiconductor carrier SC can be disassembled into different components, and different components have different characteristics, such as size, shape, physical properties, and chemical properties, and different components have corresponding different subsequent processing procedures in different cleaning tanks 100. In one embodiment, the disassembling device 500 has, for example, a mechanical arm to disassemble the semiconductor carrier SC.

[0085] Referring to Figure 6 In one embodiment, the semiconductor carrier cleaning system 10 includes at least one ultrasonic vibration device 600 disposed in the cleaning tank 100. The ultrasonic vibration device 600 uses high-frequency sound waves to vibrate and agitate the cleaning fluid CF in the cleaning tank 100 to clean the components (e.g., the first component C1, the second component C2, the third component C3, etc.) in an ultrasonic vibration manner. In this way, the ultrasonic vibration method is used to strengthen the cleaning of the components and improve the efficiency of removing contaminants and chemicals on the components. In one embodiment, the frequency of the ultrasonic waves generated by the ultrasonic vibration device 600 is adjustable and can be adjusted according to the properties of different components.

[0086] Referring to Figure 7In one embodiment, the semiconductor carrier cleaning system 10 includes at least one heating device 700 disposed in the cleaning tank 100. The heating device 700 is used to heat the cleaning fluid CF in the cleaning tank 100. In one embodiment, the heating device 700 can be, for example, an electric heater, a heating plate, a steam generating device, an infrared heating device, etc., but is not limited to these examples. In one embodiment, by disposing the heating device 700 in the cleaning tank 100, the cleaning fluid CF in the cleaning tank 100 is heated to improve the efficiency of the detachment of the contaminant and chemical substances on the components. In one embodiment, the heating temperature of the heating device 700 is adjustable and can be adjusted according to the properties of different components.

[0087] Referring to Figure 8 In one embodiment, the semiconductor carrier cleaning system 10 includes a backend system 800 coupled to the cleaning tank 100, the nano-bubble device 200, the dehydration device 300, and the negative pressure vacuum drying device 400. The backend system 800 is used to control the cleaning tank 100, the nano-bubble device 200, the dehydration device 300, and the negative pressure vacuum drying device 400 to operate in sequence so that the components (e.g., the first component C1, the second component C2, the third component C3, etc.) can be cleaned from the cleaning tank 100 to the drying process in a one-stop manner. In one embodiment, the backend system 800 is used to control and set parameters for the cleaning process of the nano-bubble device 200 to correspond to the cleaning conditions of all different types of components. In one embodiment, the backend system 800 is used to control the operation and sequence of the cleaning tank 100, the nano-bubble device 200, the dehydration device 300, and the negative pressure vacuum drying device 400. In one embodiment, the backend system 800 can be, for example, any of the aforementioned embodiments of the electronic device to provide a device for controlling and setting parameters and / or a user interface, and can be coupled to the devices corresponding to the aforementioned steps, and can store at least one cleaning process corresponding to different types of components.

[0088] Referring to Figure 9 Each cleaning tank 100 of the semiconductor carrier cleaning system 10 includes an overflow port 110 defining a circulation space in the cleaning tank 100 between the overflow port 110 and the nano-bubble device 200 for circulating and replacing the cleaning fluid CF in the cleaning tank 100. In one embodiment, the cleaning tank 100 is provided with the overflow port 110 for discharging the cleaning fluid CF from the cleaning tank, while continuously inputting the cleaning fluid CF to circulate and replace the cleaning fluid CF in the cleaning tank 100, thereby discharging the cleaning fluid CF containing the contaminant and / or chemical substances and replacing it with clean cleaning fluid CF to avoid secondary contamination of the components and improve the cleaning effect.

[0089] In one embodiment, the above-mentioned devices can be arranged in different combinations, configurations, and requirements in the semiconductor carrier cleaning system 10, and are not limited to the above-mentioned explicit examples.

[0090] Figure 10 A schematic diagram of a partial configuration of a semiconductor carrier cleaning system according to one embodiment of the present application; Figure 11 A schematic diagram of a partial configuration of a semiconductor carrier cleaning system according to one embodiment of the present application.

[0091] Reference is made to Figure 10 and Figure 11 , Figure 10 A schematic diagram of a partial configuration of a semiconductor carrier cleaning system according to one embodiment of the present application, wherein the first component C1 (e.g., a box of a FOUP) is placed in the cleaning tank 100. Figure 11 A schematic diagram of a partial configuration of a semiconductor carrier cleaning system according to another embodiment of the present application, wherein the second component C2 (e.g., a cover of a FOUP) is placed in the cleaning tank 100.

[0092] Reference is made to Figure 10 and Figure 11 The cleaning tank 100 is provided with the ultrasonic vibration device 600, and the nano-bubble device 200 is connected to the cleaning tank 100 by a pipeline to deliver the cleaning fluid CF. In addition, the nano-bubble device 200 is connected to the liquid conduit 210 to receive deionized water (DI water), and connected to the gas conduit 220 to receive a gas for generating nano-bubbles, such as carbon dioxide (CO2), ozone (O3), ammonia (NH3), or other substances capable of generating nano-bubbles, etc., so as to mix the cleaning fluid CF with nano-bubbles in the nano-bubble device 200. Furthermore, according to the position of the nano-bubble device 200 and the position of the pipeline for inputting the cleaning fluid CF, liquid flow can be generated in the cleaning tank 100 to effectively clean the components in the cleaning tank 100, as shown by the arrows in Figure 10 and Figure 11 In one embodiment, the overflow port (not shown in the figure) can be arranged on the opposite side of the cleaning tank 100 where the pipeline of the nano-bubble device 200 is arranged, so that the cleaning fluid CF can flow sufficiently in the cleaning tank 100, and the cleaning fluid CF can be continuously overflowed and circulated, thereby removing the contaminant substances floating on the surface of the cleaning fluid CF. In one embodiment, the overflow port (not shown in the figure) can be arranged on the upper side of the cleaning tank 100 where the pipeline of the nano-bubble device 200 is arranged, so that the cleaning fluid CF can flow sufficiently in the cleaning tank 100, and the cleaning fluid CF can be more easily overflowed and effectively circulated, thereby removing the contaminant substances floating on the surface of the cleaning fluid CF.

[0093] Therefore, the integrated disassembling, classifying, nano-bubble cleaning, negative pressure vacuum drying and other steps provided by the one-stop semiconductor carrier cleaning method and semiconductor carrier cleaning system can effectively improve the cleaning effect of the semiconductor carrier, improve the problem of harmful substances such as pollutants, volatile organic compounds, toluene, isopropyl alcohol and other harmful substances remaining in the semiconductor carrier, and effectively achieve a one-stop complete cleaning process in a set of cleaning systems, differential cleaning for each component of the semiconductor carrier, and the effect of reducing the space required for configuring the cleaning equipment and the length of the substation cleaning program. In addition, through the ultrasonic vibration device, heating device, backend system, soaking step and overflow step, the cleaning effect of the semiconductor carrier cleaning method and system can be further improved, and the cleanliness of the semiconductor carrier is improved.

[0094] The present application has been disclosed above by way of examples, but those skilled in the art should understand that the examples are only used to depict the present application and should not be interpreted as limiting the scope of the present application. It should be noted that any equivalent changes and substitutions of the examples should be considered as falling within the scope of the present application. Therefore, the scope of protection of the present application is defined by the patent application range, and the scope of the appended claims should be interpreted in the broadest sense to include all modifications, similar arrangements and processes.

Claims

1. A method for cleaning a semiconductor carrier, characterized in that, Includes the following steps: The disassembly process involves breaking down the semiconductor carrier to be cleaned into multiple components. The sorting process involves classifying the multiple components and placing them into the corresponding cleaning tanks. The nano-bubble cleaning step involves cleaning the components in each cleaning tank according to the characteristics of the components to be cleaned; and The negative pressure vacuum drying step involves drying the internal components of each cleaning tank.

2. The semiconductor carrier cleaning method according to claim 1, characterized in that, In this nanobubble cleaning step, a nanobubble device is used to deliver cleaning fluid to the cleaning tank to thoroughly clean the micropores of the component.

3. The semiconductor carrier cleaning method according to claim 2, characterized in that, The cleaning solution is a mixture of deionized water, carbon dioxide, ozone, or ammonia.

4. The semiconductor carrier cleaning method according to claim 1, characterized in that, In this nanobubble cleaning step, an ultrasonic vibration device is installed in the cleaning tank to agitate the cleaning liquid in the cleaning tank by generating high-frequency sound wave vibration, so as to clean the component by ultrasonic vibration.

5. The semiconductor carrier cleaning method according to claim 1, characterized in that, In this nanobubble cleaning step, a heating device is installed in the cleaning tank to heat the cleaning solution in the cleaning tank.

6. The semiconductor carrier cleaning method according to claim 5, characterized in that, After the cleaning solution is heated, a soaking step is also included, in which the component is soaked until a preset cleaning condition is reached, wherein the preset cleaning condition is that the component is cleaned by more than 50%.

7. The semiconductor carrier cleaning method according to claim 1, characterized in that, In this nanobubble cleaning step, the cleaning process is controlled and set with parameters by a back-end system to correspond to the cleaning conditions of all different types of the component.

8. The semiconductor carrier cleaning method according to claim 1, characterized in that, The nanobubble cleaning step also includes an overflow step to circulate and replace the cleaning solution in the cleaning tank.

9. The semiconductor carrier cleaning method according to claim 1, characterized in that, Before the negative pressure vacuum drying step, a dehydration step is also included to drain the cleaning liquid in the cleaning tank and remove some of the liquid adhering to the component.

10. A semiconductor carrier cleaning system for cleaning a semiconductor carrier comprising multiple different types of components, characterized in that, The semiconductor carrier cleaning system includes: Multiple cleaning tanks, each equipped with a different type of component; and At least one nanobubble device is coupled to the cleaning tank. The nanobubble device is used to deliver cleaning fluid to at least one of the cleaning tanks for comprehensive cleaning of the micropores of the component. The cleaning tank includes: At least one dehydration device is disposed in the cleaning tank, the dehydration device draining the cleaning liquid in the cleaning tank and removing some of the liquid adhering to the component; and At least one negative pressure vacuum drying device is disposed in the cleaning tank, and the negative pressure vacuum drying device is used to dry the component in the cleaning tank; The cleaning tank, the nano bubble device, the dehydration device, and the negative pressure vacuum drying device operate in sequence, and the process from cleaning to drying of this component is completed in one stop.

11. The semiconductor carrier cleaning system according to claim 10, characterized in that, It also includes a disassembly device that separates different types of components of the semiconductor carrier and transports them to the corresponding cleaning tank.

12. The semiconductor carrier cleaning system according to claim 10, characterized in that, It also includes at least one ultrasonic vibration device disposed in the cleaning tank. The ultrasonic vibration device uses high-frequency sound wave vibration to agitate the cleaning fluid in the cleaning tank to clean the component by ultrasonic vibration.

13. The semiconductor carrier cleaning system according to claim 10, characterized in that, It also includes at least one heating device disposed in the cleaning tank, the heating device being used to heat the cleaning liquid in the cleaning tank.

14. The semiconductor carrier cleaning system according to claim 10, characterized in that, It also includes a back-end system for controlling the cleaning tank, the nanobubble device, the dehydration device and the negative pressure vacuum drying device to operate in sequence, so that the component can complete the cleaning and drying process in one stop.

15. The semiconductor carrier cleaning system according to claim 10, characterized in that, Each of the cleaning tanks includes an overflow port that defines a circulation space within the cleaning tank between the overflow port and the nanobubble device, for circulating and replacing the cleaning fluid in the cleaning tank.

16. The semiconductor carrier cleaning system according to claim 10, characterized in that, The cleaning solution is a mixture of deionized water, carbon dioxide, ozone, or ammonia.

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