Automated control of substrates

Abstract

The present techniques include methods and systems for improving substrate processing. Methods and systems include disposing a substrate on a susceptor including a plurality of heating zones, each heating zone having a separate heater, processing the substrate according to an initial substrate processing recipe including an initial susceptor temperature, collecting initial substrate feedback of one or more substrate properties, and providing data as a first input for a substrate control algorithm. The method includes generating a substrate model based on one or more modeled tests of the substrate, providing the generated substrate model as a second input to the substrate control algorithm, controlling the heater power or heater temperature to achieve a target substrate property in one or more substrate regions. The method includes calculating and performing, by a processor running the substrate control algorithm, a correction based on the first input and the second input.

Description

TECHNICAL FIELD

[0001] This application claims the benefit of and priority to U.S. Patent Application No. 18 / 297,549, filed April 7, 2023, entitled “Automated Control of Substrates,” which is incorporated by reference herein in its entirety.

[0002] The present technology relates to semiconductor manufacturing processes and devices. More specifically, the present technology relates to substrate control for producing high quality semiconductor devices. BACKGROUND

[0003] Integrated circuits are made possible by processes that produce complex patterned layers of material on a substrate surface. Producing patterned material on a substrate requires controlled methods for deposition, expansion, and removal of the material. However, producing high quality layers of material can be challenging for new device designs. For example, as the feature size of integrated circuit device patterns gets smaller and smaller, the critical dimension (CD) specifications of these features become an even more important standard for stable and repeatable device performance. Due to chamber asymmetries, such as showerhead and substrate temperature, flow conductance, and RF fields, allowable variation on substrates processed within a process chamber is difficult to achieve.

[0004] Accordingly, there is a need for improved systems and methods that can be used to produce high quality devices and structures. The present technology addresses these and other needs. SUMMARY

[0005] Embodiments of the present technology generally relate to methods for controlling substrate processing. The method includes disposing a substrate on a susceptor, where the susceptor includes a plurality of heating zones, each heating zone including an independent heater. The method includes processing the substrate according to an initial substrate processing recipe and an initial susceptor temperature, where the initial substrate processing recipe includes one or more substrate processing steps. In embodiments, the method includes collecting initial substrate feedback of one or more substrate properties. The method includes providing data representing the initial substrate feedback as a first input to a substrate control algorithm. The method includes generating a substrate model based on one or more modeled tests of the substrate. The method includes providing the generated substrate model as a second input to the substrate control algorithm. The method includes correcting power or temperature of one or more heating zones and / or heat exchanger / cooler temperature to achieve a target substrate property. In embodiments, the correction is calculated and executed by a processor running the substrate control algorithm based on the first input and the second input. The method includes updating the initial substrate processing recipe based on the correction, forming an updated processing recipe.

[0006] In embodiments, the method includes where the one or more substrate properties include a substrate temperature measured at two or more spaced apart regions on the substrate, a thickness of one or more layers across the substrate, a substrate etch depth, or a combination thereof. In embodiments, the one or more properties is a substrate temperature and the substrate includes a plurality of temperature sensors, where the temperature is provided at each temperature sensor. In embodiments, the heater power or heater temperature and / or heat exchanger / cooler temperature is corrected to control a target substrate property in one or more substrate regions corresponding to a portion of or each of the plurality of temperature sensors. In further embodiments, the one or more substrate properties is a thickness of one or more layers across the substrate, a substrate etch depth, or a combination thereof, and the heater power or heater temperature and / or heat exchanger / cooler temperature is corrected to control a target substrate property at a portion of or each of the two or more spaced apart regions. In further embodiments, the heater power or heater temperature and / or heat exchanger / cooler temperature is corrected to achieve a target substrate property at a portion of or each of the two or more spaced apart regions. In further embodiments, the plurality of heating zones includes greater than or about five heating zones.

[0007] Additionally or alternatively, in embodiments, the one or more modeled tests include correcting the heater power or heater temperature and / or heat exchanger / cooler temperature. In embodiments, the one or more modeled tests are automatically selected based on the initial substrate feedback or are generated by a substrate modeling algorithm, where the correction is calculated and performed by a processor running the substrate modeling algorithm. In further embodiments, the method further includes processing the substrate according to the updated process recipe and collecting updated substrate feedback of the one or more substrate properties. In further embodiments, the substrate includes two or more regions, where at least one of the two or more regions includes the target substrate property, where the corrected heater power or heater temperature and / or heat exchanger / cooler temperature is in one or more heating zones disposed horizontally adjacent to the region including the target substrate property.

[0008] In embodiments, the method further includes comparing the updated substrate feedback to the target substrate property, and if a difference between the updated substrate feedback and the target substrate property is greater than a predetermined level, further correcting the heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the heating zones to achieve the target substrate property, wherein the further correction is calculated and performed by the processor running the substrate control algorithm based on data representing the updated substrate feedback and the second input, and updating the updated process recipe based on the further correction, forming a second updated process recipe. In further embodiments, the predetermined level is calculated according to one or more modeled tests selected to estimate a noise value, wherein the predetermined level is greater than or about a level corresponding to the noise value. In embodiments, the method includes updating the substrate model based on the further correction. In embodiments, the method includes processing one or more additional substrates based on the second updated process recipe. In further embodiments, the method includes comparing the second updated substrate feedback to the target substrate property, and if a difference between the second updated substrate feedback and the target substrate property is greater than or about 5%, correcting the heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the heating zones to achieve the target substrate property, wherein the correction is calculated and performed by the processor running the substrate control algorithm based on data representing the second updated substrate feedback and the second input, and updating the second updated process recipe based on the correction, forming a third updated process recipe.

[0009] Embodiments of the present technology also generally relate to a semiconductor processing system. The system includes a pedestal including a plurality of heating zones configured to support a substrate, and a controller configured to execute a substrate control algorithm that is part of a substrate control framework. The system includes where the controller is configured to process the substrate according to an initial substrate process recipe including one or more substrate processing steps and an initial pedestal temperature. The system includes where the controller is configured to collect initial substrate feedback of one or more substrate properties. The system includes where the controller is configured to provide data representing the initial substrate feedback as a first input to the substrate control algorithm. The system includes where the controller is configured to generate a substrate model based on one or more modeled tests of the substrate. The system includes where the controller is configured to provide the generated substrate model as a second input to the substrate control algorithm. The system includes where the controller is configured to correct the heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the heating zones to achieve a target substrate property, wherein the correction is calculated and performed by a processor running the substrate control algorithm based on the first and second inputs. The system includes where the controller is configured to update the initial substrate process recipe based on the correction, forming an updated process recipe.

[0010] In embodiments, the system includes where each heating zone includes a temperature sensor. In further embodiments, the substrate control algorithm is a closed loop algorithm. In further embodiments, the one or more modeled tests are selected from a plurality of modeled tests stored in the substrate control architecture.

[0011] Embodiments of the present technology also generally relate to semiconductor processing systems. The system includes a chamber body, a first pedestal configured to support a first substrate including a plurality of heating zones disposed in the chamber body, a second pedestal configured to support a second substrate including a plurality of heating zones disposed in the chamber body, and a controller configured to execute a substrate control algorithm as part of a substrate control architecture. The system includes where the controller is configured to process the first substrate and the second substrate according to an initial substrate processing recipe including one or more substrate processing steps and an initial pedestal temperature. The system includes where the controller is configured to collect initial substrate feedback of one or more substrate properties of the first substrate and the second substrate. The system includes where the controller is configured to provide data representing the initial substrate feedback of the first substrate and the second substrate to the substrate control algorithm. The system includes where the controller is configured to generate a first substrate model and a second substrate model based on one or more modeled tests of the first substrate and the second substrate. The system includes where the controller is configured to provide the first substrate model and the second substrate model to the substrate control algorithm. The system includes where the controller is configured to correct a heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the first plurality of heating zones and the second plurality of heating zones to achieve a target substrate property of the first substrate and the second substrate. In the system, the correction is calculated and executed by a processor running the substrate control algorithm based on the initial substrate feedback of the first substrate and the first substrate model of the first substrate and the initial substrate feedback of the second substrate and the second substrate model of the second substrate.

[0012] In embodiments, the system includes where the power or temperature correction of the first plurality of heating zones is different than the correction of the second plurality of heating zones.

[0013] This technology can provide many benefits compared to conventional systems and techniques. For example, these processes and systems can significantly reduce processing defects in substrates. In addition, these processes and systems can significantly reduce differences or variations across substrates, even substrates produced on different pedestals, different chamber sides, or even different chambers. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and drawings. BRIEF DESCRIPTION OF DRAWINGS

[0014] A further understanding of the nature and advantages of the disclosed technology can be realized by reference to the remaining portions of the specification and the drawings.

[0015] Figure 1A A top view schematic of a processing chamber according to embodiments of the present technology is shown.

[0016] Figure 1B A cross-sectional schematic side view of a processing chamber according to embodiments of the present technology is shown.

[0017] Figure 2 A perspective view of a susceptor assembly having a multi-zone susceptor heater according to embodiments of the present technology is shown.

[0018] Figure 3 A top view of a facility plate containing two multi-zone susceptor heaters arranged side-by-side according to embodiments of the present technology is shown.

[0019] Figure 4 A top view of a multi-zone susceptor heater according to embodiments of the present technology is shown.

[0020] Figure 5 A schematic block diagram of a system according to embodiments of the present technology is shown.

[0021] Figure 6 A schematic block diagram of a substrate control architecture according to embodiments of the present technology is shown.

[0022] Figure 7A and Figure 7B A top view of a substrate according to embodiments of the present technology is shown.

[0023] Figure 8 Selected operations in a method according to embodiments of the present technology are shown.

[0024] Figure 9 A block diagram of an example computer system operable to implement embodiments of the present technology is shown.

[0025] Several of the figures are included as schematic illustrations. It should be understood that the figures are provided by way of example to aid in the understanding of the present technology, and are not limiting of the present technology. Unless specifically set forth herein, the drawings are not to be concerned as being to scale. Furthermore, many of the figures are provided by way of example to aid in the understanding of the present technology, and are not intended to be limiting of the present technology, and may include exaggerated data to help illustrate a particular point.

[0026] In the drawings, like reference numerals can be used to denote like components throughout the several views. Additionally, various components of the same type can be distinguished from each other by references accompanied by a first reference numeral to indicate the component and a second reference numeral to indicate the different instance to which the reference numeral applies. If only the first reference numeral is used to designate a component, then any instances following the first reference numeral are all like components. DETAILED DESCRIPTION

[0027] Semiconductor processing involves many different chemical and physical processes to enable the creation of tiny integrated circuits on a substrate. Layers of material that make up the integrated circuits can be created by chemical vapor deposition, physical vapor deposition, and epitaxial growth, among others. Some layers of material are patterned using photoresist masks and wet or dry etching techniques. In the fabrication of integrated circuits, plasma processes are often used to deposit or etch various layers of material. Plasma processing offers many advantages over thermal processing. However, plasma processes, as well as other deposition and etching processes, can be highly dependent on the temperature of the substrate.

[0028] Substrate surface temperature control uniformity can be challenging due to chamber-to-chamber differences, side-to-side differences within the same chamber or separate chambers, or even susceptor-to-susceptor differences within the same chamber or separate chambers. For example, the thermal fingerprint of many chambers can vary from minimal to quite significant, even between similar chambers, due to design tolerances, placement in the facility (e.g., close to heat sources or spaced apart), etc. Common heat sources and heat sinks in a processing chamber can include susceptor heaters, pedestal cooling plates, lid assemblies and / or showerheads (e.g., how far the lid assembly is placed from the substrate), slit valves, and the temperature of the chamber body itself, all of which affect the temperature of the substrate. It is apparent that uniformly heating a substrate is complex, and non-uniform heating can create undesirable local hot "spots" and cold "spots" on the substrate. This phenomenon can lead to variations in substrate processing results due, at least in part, to the non-uniform temperatures.

[0029] Attempts have been made to improve temperature uniformity by continually increasing the number of heating zones present on a susceptor (also referred to as a substrate support), with the goal of removing regional hot "spots" and cold "spots." Some known substrate supports can have edge-to-center temperature control or other multi-zone control. However, the temperature control of each zone is dependent on engineering modeling under ideal conditions on a single chamber and within the chamber. Thus, if non-ideal conditions are encountered, or if the test or production chamber is different from the modeled chamber, further corrections must be made manually after defects are observed, and must be made on a chamber-by-chamber (or side-by-side or susceptor-by-susceptor) basis. Furthermore, most engineering models have difficulty properly accounting for the highly non-linear behavior of the thermal chemical processes to which the substrate is subjected. This can be problematic because many systems can have tens, hundreds, or even thousands of chambers and substrates running simultaneously, making post-processing manual corrections infeasible for consistent processing. Furthermore, as the number of heating zones on a substrate support continues to increase, manual corrections become increasingly difficult, or even infeasible. That is, known processes require manual trial-and-error correction of the temperature in each heating zone or multiple heating zones to correct for regional heating defects on the substrate. Thus, as the number of heating zones continues to increase, and as chambers continue to become more complex, the number of trials required for successful defect correction increases exponentially, making this manual process infeasible, if not impractical, for manual correction.

[0030] In addition to, or instead of, the challenges inherent in uniformly heating a substrate, even a uniformly heated substrate does not necessarily correspond to a substrate having low variation, such as uniform thickness across one or more layers of the substrate, or other substrate properties. In fact, for example, the thickness across one or more layers of a processed substrate depends not only on its thermal properties, but also on a number of other factors and sources that change the chemical reactions within the semiconductor processing chamber. Such chemical reactions are typically highly non-linear, and the number of such factors and sources is large enough that any off-line modeling attempt is almost impossible and extremely time consuming. In fact, any attempt to systematically model the physical reactions resulting in variation in thickness across one or more layers of the substrate at different locations within the substrate surface and for different parameters and chamber processing conditions requires an extremely large number of preliminary data points, engineering time to collect and process these data, system downtime, and engineering time to generate and validate any possible model resulting from these data. That is, such an attempt would require manually determining and controlling data points for each variable. In the presence of unexpected or un-modeled chamber-to-chamber or pedestal-to-pedestal variations, the resources required to perform known modeling of thickness across one or more layers of the substrate can not even be able to characterize the correct thickness across one or more layers of the substrate. Thus, when variations are observed, known methods are limited in the corrections available, i.e., for a large number of chamber processing conditions and processing parameters, it is not possible to effectively and quickly model the substrate properties across the entire surface of the substrate.

[0031] Furthermore, the uniform distribution of certain substrate properties across the substrate surface, such as surface temperature, thickness of one or more layers, etch rate, and other properties, can not always represent the desired target. In fact, in some embodiments, it can be desirable to select a non-uniform target profile, i.e., to select different targets for different locations on the substrate surface. The non-uniform target profile can be provided in terms of a limited number of points, each characterized by a particular magnitude and coordinate location on the substrate. The number and location of all points must be customizable so as to provide the user with the necessary degrees of freedom to select a customized target profile for different process requirements. The number and location of target points for a non-uniform target profile of a substrate are not expected to be one-to-one matched with the number and location of heating zones of the substrate support. That is, the location of target points can vary with different process conditions, and the number of target points can be lower or higher than the number of heating zones of the pedestal heater. However, known techniques are not able to provide a substrate control solution for a customized defined target profile having a variable distribution of points across the substrate, and where the heating zones of the pedestal are not aligned with the location of target points on the substrate.

[0032] Another drawback of the known art is the inability to adapt in-situ to control different properties of the substrate. For example, the known art developed to control the thickness of one or more layers across the substrate cannot be used to control the substrate temperature, and vice versa. However, at different stages of the production process, it is necessary to adjust different substrate properties. For example, during the calibration phase, it can be desirable to adjust the temperature across the surface of the substrate to a particular target profile, while during the pre-production phase, it is desirable to adjust the thickness of one or more layers across the substrate to a particular target profile. However, the known art fails to provide a unified framework for modeling and control of different substrate properties.

[0033] The present technology overcomes these and other challenges by providing a closed loop system for automatically controlling substrate properties based on feedback from the substrate during or after experiencing processing conditions. Processes and methods according to the present technology can surprisingly account for unexpected or previously un-modeled behavior, even on a chamber-to-chamber, side-to-side, or pedestal-to-pedestal basis. Moreover, by utilizing processes and methods according to the present technology, the substrate control system can be optimized at any time the substrate recipe changes. For example, the methods and processes of the present technology require a significantly reduced number of iterations to adjust a target substrate property to a desired substrate target profile, e.g., even five or fewer iterations in embodiments. That is, in embodiments, the present technology provides methods and processes for correcting pedestal temperature based on substrate feedback, including feedback in pedestals having multiple individual heating zones, to control substrate properties. Surprisingly, by utilizing substrate feedback, as opposed to individual pedestal feedback, the present technology has found that the pedestal conditions can be controlled to minimize or eliminate undesirable chamber-to-chamber and pedestal-to-pedestal inconsistencies. That is, contrary to previous notions, the present technology has found that uniform temperature across the pedestal is not sufficient given chamber-to-chamber and pedestal-to-pedestal inconsistencies, and instead, adjusting a target substrate property to a substrate target profile across the surface of the substrate requires temperature variation across the pedestal. Accordingly, the present technology provides methods and processes that overcome chamber differences to provide improved control of substrate temperature profiles, even in highly complex chambers, or across a large number of chambers and / or pedestals.

[0034] While the remaining disclosure will routinely identify particular pedestal control methods and processes that utilize the disclosed technology, it will be readily understood that these systems and methods are equally applicable to a variety of other semiconductor processing operations and systems. Accordingly, the technology should not be considered limited to use with only the systems or processes described. Prior to describing systems and methods or operations of exemplary process sequences according to some embodiments of the present technology, the present disclosure will discuss one possible system that can be used with the present technology. It should be understood that the present technology is not limited to the described apparatus, and the processes discussed, along with any number of modifications, can be performed in any number of processing chambers and systems, some of which modifications will be described hereafter.

[0035] Figure 1A A top plan view of one embodiment of a processing system 100 showing deposition, etch, bake, and cure chambers according to embodiments is shown. In this figure, a pair of front opening unified pods (FOUPs) 101 supply substrates of various sizes that are received by a robotic arm 102 and placed into a low pressure holding area 103 before being placed into one of substrate processing chambers 104a-f, which are positioned in tandem sections 105a-c. A second robotic arm 106 can be used to transport substrate wafers from the holding area 103 to the substrate processing chambers 104a-f and back. Each substrate processing chamber 104a-f can be equipped to perform a number of substrate processing operations, including cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced chemical vapor deposition (PECVD), etching, pre-cleaning, degassing, orientation, and other substrate processing. The substrate processing chambers 104a-f can include one or more system components for deposition, annealing, curing, and / or etching. Any one or more of the processes described herein can be performed in chambers separate from the manufacturing systems shown in different embodiments. It should be understood that additional configurations of chambers 104a-f are contemplated by system 100.

[0036] Figure 1BA schematic view of a processing chamber 108, which can be adapted in embodiments to any one or more of the processing chambers 104a-f, or can be used in a separate processing system 100, is illustrated for exemplary purposes. Nonetheless, the processing chamber 108 has a substrate support assembly 126 that can be used in accordance with the methods and processes of the present technology. As noted above, the processing chamber 108 and / or the substrate support assembly 126 can be used in other processing chambers, such as plasma processing chambers, anneal chambers, physical vapor deposition chambers, chemical vapor deposition chambers, ion implantation chambers, and the like, or incorporated into processing systems that include one or more such processing chambers. Moreover, the substrate support assembly 126 and / or the processing chamber 108 can be used in other processing systems where the ability to provide a personalized and consistent temperature profile of a surface or workpiece, e.g., a substrate, is beneficial. That is, methods and processes for providing independent and local control of temperature across a substrate allow for improved substrate consistency within and between chambers in accordance with the present technology. For example, by accounting for local temperature variances, such as hot and cold spots of the substrate itself, and making corresponding changes to the processing chamber to address such variances, consistency can be improved in accordance with the present technology.

[0037] Nonetheless, in embodiments, the processing chamber 108 includes a grounded chamber body 109. The chamber body 109 includes a sidewall 110, a bottom 111, and a lid 112 that enclose an interior volume 124. A substrate support assembly 126 is disposed in the interior volume 124 and can support a substrate 134. The sidewall 110 of the processing chamber 108 can include an opening (not shown) through which the substrate 134 can be transferred into and out of the interior volume 124 by a robot, e.g., by the robot arm 106 in embodiments. A pumping port 113 is formed in one of the sidewall 110 or the bottom 111 of the chamber body 109 and is fluidly connected to a pumping system (not shown). The pumping system can maintain a vacuum environment within the interior volume 124 of the processing chamber 108 and can remove processing byproducts from the processing chamber.

[0038] A gas panel 115 can provide process and / or other gases to the interior volume 124 of the processing chamber 108 through one or more inlets 114 formed in the lid 112 and / or the sidewall 110 of the chamber body 109. In embodiments, the lid 112 is a lid assembly or lid stack that can include a showerhead (not shown separately). Process gases provided by the gas panel 115 can be energized to form a plasma 122 within the interior volume 124, which is used to process a substrate 134 disposed on the substrate support assembly 126. The process gas can be energized by RF power inductively coupled to the process gas from a plasma applicator 120 located outside of the chamber body 109. In embodiments, the plasma applicator 120 is an RF antenna that is electrically coupled to an RF power source (not shown) and is configured to inductively couple RF power to the process gas in the interior volume 124 of the processing chamber 108. Figure 1BIn the illustrated embodiment, the plasma applicator 120 is a pair of coaxial coils coupled to an RF power source 116 through a matching circuit 118. However, although an RF plasma is illustrated as an exemplary plasma source, in embodiments any plasma source or formation method can be used with the processes and methods discussed herein.

[0039] A controller 148 is connected to the processing chamber 108 to control the operation of the processing chamber 108 and the processing of the substrate 134. The controller 148 can be a general purpose data processing system that can be used in an industrial setting to control various sub-processors and sub-controllers. Generally, the controller 148 includes a central processing unit (CPU) 172 in communication with a memory 174 and input / output (I / O) circuitry 176, as well as other common components not shown. Software commands executed by the CPU of the controller 148 can cause the processing chamber to, for example, introduce an etchant gas mixture (i.e., process gas) into the interior volume 124, form a plasma 122 from the process gas by applying RF power from the plasma applicator 120, and etch a material layer on the substrate 134.

[0040] The substrate support assembly 126 generally includes at least one substrate support 132. The substrate support 132 can be a vacuum chuck, an electrostatic chuck (ESC), or other workpiece support surface. Although an ESC is specifically mentioned as a type of substrate support 132 in some examples, the scope of the present disclosure is not limited to ESCs. The substrate support assembly 126 can additionally include a susceptor heater assembly 170 including a main resistive heating element 154 (also referred to as a main resistive heater) and a plurality of additional resistive heating elements, referred to herein as spatially adjustable heating elements 140 (also referred to as independently controllable heaters).

[0041] The substrate support assembly 126 can also include a temperature-controlled pedestal 130 that is heated and / or cooled by a chiller and / or heat exchanger (HX / chiller) 144 coupled to the temperature-controlled pedestal. The temperature-controlled pedestal 130 can alternatively be separate from the substrate support assembly 126. The substrate support assembly 126 can be removably coupled to a support pedestal 125. The support pedestal 125 can include a pedestal base 128 and a facility plate 180 that is mounted to the chamber body 109. The substrate support assembly 126 can be periodically removed from the support pedestal 125 to allow for refurbishment of one or more components of the substrate support assembly 126.

[0042] The facility plate 180 is configured to accommodate one or more drive mechanisms configured to raise and lower the plurality of lift pins. In addition, the facility plate 180 is configured to accommodate fluid connections from the substrate support 132 and the temperature controlled pedestal 130. The facility plate 180 is also configured to accommodate electrical connections from the substrate support 132 and the pedestal heater assembly 170. The one or more connections can extend outside or inside of the substrate support assembly 126, and the facility plate 180 can provide an interface for connecting to the respective terminations.

[0043] The substrate support 132 has a mounting surface 131 and a workpiece surface 133 opposite the mounting surface 131. Figure 1B The substrate support 132 shown in the example of FIG. 1 generally includes a chucking electrode 136 embedded in a dielectric body 150. The chucking electrode 136 can be configured as a single pole or a dual pole electrode, or other suitable arrangement. The chucking electrode 136 can be coupled through a radio frequency (RF) filter 182 to a chucking power supply 138 that provides RF or direct current (DC) power to electrostatically secure the substrate 134 to an upper surface of the dielectric body 150. For non-ESC based substrate supports 132, other types of mechanisms can be used to secure the substrate 134 to the substrate support 132 (e.g., mechanical clamping, vacuum based clamping, etc.). The RF filter 182 prevents RF power used to form the plasma 122 within the processing chamber 108 from damaging electrical equipment or presenting an electrical hazard outside of the chamber. Again, the present disclosure is not limited to ESC based substrate supports and / or substrate supports for RF applications.

[0044] The workpiece surface 133 of the substrate support 132 can include gas passages (not shown) for providing a backside heat transfer gas to a gap space defined between the substrate 134 and the workpiece surface 133 of the substrate support 132. The substrate support 132 can also include lift pin holes for accommodating lift pins (both not shown) that are used to lift the substrate 134 above the workpiece surface 133 of the substrate support 132 to facilitate robotic transfer into and out of the processing chamber 108.

[0045] The temperature controlled pedestal 130 can be coupled to a chiller and / or heat exchanger 144. The chiller and / or heat exchanger 144 provides a temperature transfer fluid, such as a liquid, a gas, or a combination thereof, that is circulated through one or more conduits 160 disposed in the temperature controlled pedestal 130. The fluid flowing through adjacent conduits 160 can be isolated to enable localized control of heat transfer between different regions of the substrate support 132 and the temperature controlled pedestal 130, which facilitates control of the lateral temperature profile of the substrate 134, as will be discussed in more detail below.

[0046] The susceptor heater assembly 170 can include one or more main resistive heaters 154 and / or a plurality of spatially adjustable heaters 140 embedded in the main body 152. In some embodiments, the main resistive heaters and the spatially adjustable heaters can be the same element. The main body 152 can additionally include a plurality of temperature sensors (not shown in Figure 1B FIG. 2, and are shown in greater detail in Figures 2 to 4 FIG. 3). Each of the plurality of temperature sensors can be used to measure the temperature of a region of the susceptor heater assembly and / or a region of the substrate support associated with the susceptor heater assembly region, which will be discussed in greater detail below. In one embodiment, the susceptor heater assembly 170 is included in the substrate support 132.

[0047] The main resistive heaters 154 can be provided to raise the temperature of the substrate support assembly 126 to a temperature for conducting a chamber process. The spatially adjustable heaters 140 are complementary to the main resistive heaters 154 and are configured to adjust the local temperature of the substrate support 132 at a plurality of discrete locations within one or more of a plurality of laterally separated heating zones defined by the main resistive heaters 154. The spatially adjustable heaters 140 provide local adjustment of the temperature profile of a substrate 134 placed on the substrate support assembly 126. The main resistive heaters 154 operate on a global macro scale, while the spatially adjustable heaters 140 operate on a local micro scale. However, it should be understood that in embodiments, the present technology can use only one heater type and / or region.

[0048] The main resistive heaters 154 can be coupled to a main susceptor heater power supply 156 through an RF filter 184. The main susceptor heater power supply 156 can provide 900 watts or more of power to the main resistive heaters 154. The controller 148 can control the operation of the main susceptor heater power supply 156, which is generally set to heat the substrate 134 to approximately a predetermined temperature. In one embodiment, the main resistive heaters 154 include laterally separated heating zones, where the controller 148 enables one zone of the main resistive heaters 154 to be preferentially heated relative to the main resistive heaters 154 located in one or more other zones. For example, the main resistive heaters 154 can be arranged concentrically in a plurality of separated heating zones.

[0049] In one embodiment, the main resistive heaters 154 and / or the spatially adjustable heaters 140 can be formed in the substrate support 132. In such embodiments, the substrate support assembly 126 can be formed without the susceptor heater assembly 170, with the substrate support 132 being directly disposed on the temperature controlled pedestal 130. A susceptor heater controller 178, which can be part of the controller 148, can be disposed proximate the temperature controlled pedestal 130 and selectively control the individual spatially adjustable heaters 140.

[0050] The substrate support 132 and / or the pedestal heater assembly 170 can include a plurality of temperature sensors for providing temperature feedback information. The temperature feedback information can be sent to the controller 148 for controlling the power applied to the main resistive heater 154 by the main pedestal heater power supply 156, for controlling the operation of the temperature-controlled susceptor 130, and / or for controlling the power applied to the spatially adjustable heaters 140 by the pedestal heater power supply 142. Alternatively or in addition, the temperature feedback information can be provided to the pedestal heater controller 178 for determining the operability of the spatially adjustable heaters 140 and / or for controlling the power applied to the spatially adjustable heaters 140. Each temperature sensor can be located proximate to one of the spatially adjustable heaters and can be used to determine the operability of the proximate one or more spatially adjustable heaters. In one embodiment, each temperature sensor is a resistance temperature detector (RTD).

[0051] As discussed above, the temperature of the substrate 134 in the processing chamber 108 can be affected by pump-out of process gases, slit valves, and / or other factors. The temperature-controlled susceptor 130, the one or more main resistive heaters 154, and the spatially adjustable heaters 140 all contribute to controlling the temperature of the substrate 134 according to processes and methods discussed in more detail below.

[0052] As the number of independently controllable heating zones increases, the ability to create a customized heat profile on the substrate also increases. However, previous attempts to control the temperature of the substrate surface have utilized temperature variation feedback from the substrate support 126 and have not taken into account the other chamber factors discussed above, which do not always accurately reflect the temperature of the substrate 134 under real-time processing conditions. Therefore, in embodiments, and as will be discussed in more detail below, in addition to susceptor interactions, the present technology can control the temperature or power distribution of the susceptor heaters based on process feedback from the substrate itself and based on modeling of the substrate with chamber interactions to reduce variations in the temperature profile of the substrate. Based on tuning information collected according to the processes and methods of the present technology, the temperature profile of the substrate can be made uniform or varied according to a predetermined substrate target profile across regions on the substrate 134.

[0053] It is contemplated that the spatially adjustable heaters 140, the main resistive heater 154, and / or the temperature sensors can be arranged in different configurations and orientations. For example, the substrate support assembly 126 can have multiple spatially adjustable heaters 140 for heating the substrate 134, can not have a main resistive heater 154, and / or can include temperature sensors for monitoring the spatially adjustable heaters 140. Alternatively, the substrate support assembly 126 can have a main resistive heater 154 and / or temperature sensors, but can lack spatially adjustable heaters 140. In such embodiments, the temperature sensors can be disposed in a plane proximate to a plane that includes the main resistive heater 154. However, in embodiments, the spatially adjustable heaters 140 and the main resistive heater 154 are disposed directly below one another within the substrate support assembly 126. The spatially adjustable heaters 140 can provide fine-tuned control of the temperature profile of the substrate 134 supported by the substrate support assembly 126, and the temperature sensors can provide detailed information about the operation of the spatially adjustable heaters 140. Similar to the spatially adjustable heaters 140, the temperature sensors can be formed or disposed on or in the body 152 of the susceptor heater assembly 170. Alternatively, the temperature sensors can be formed or disposed on or in an electrostatic chuck that forms all or a portion of the substrate support 132.

[0054] In one embodiment, the spatially adjustable heaters 140 and the temperature sensors are disposed within and formed with the susceptor heater assembly 170. In another embodiment, the spatially adjustable heaters 140 and / or the temperature sensors are disposed directly on the mounting surface 131 of the substrate support 132. In some embodiments, the main resistive heater 154 is manufactured similarly to the spatially adjustable heaters 140. In embodiments where the main resistive heater 154 is manufactured similarly to the spatially adjustable heaters 140, the main resistive heater can be used as appropriate without the added benefit of the spatially adjustable heaters 140. In other words, the main resistive heater 154 of the substrate support assembly 126 can itself be spatially adjustable, i.e., segmented into multiple discrete resistive heating elements. In such embodiments, a separate temperature sensor can be disposed proximate to each of the main resistive heater 154. Segmentation of the main resistive heater 154 in the form of small resistive heaters allows for localized control of hot and cold spots on the surface of the substrate 134. The additional layer of spatially adjustable heaters 140 is optional depending on the level of temperature control to be achieved.

[0055] Figure 2An alternative configuration of the substrate support assembly 126 is shown. This substrate support assembly 200 has a susceptor heater assembly 203 at the top and a shaft 204 at the bottom. Electrical connections 206 couple the heating elements in the susceptor heater assembly 203 to an external temperature controller (such as a control interface printed circuit board (PCB), as described in more detail in Figure 5

[0056] Figure 3 A top view of a facility plate 380 containing two multi-zone susceptor heaters 303a and 303b arranged side-by-side is shown, according to one embodiment of the disclosure. As described above, in embodiments, the processing chamber 208 can include more than one susceptor. Thus, in embodiments, the facility plate 180 / 380 can contain a number of multi-zone susceptor heaters 303a-x corresponding to the number of susceptor in the processing chamber.

[0057] Figure 4 A top cross-sectional view through the body 152 of the susceptor heater assembly 170 is shown, with the space adjustable heaters 140 shown from the top. The susceptor heater assembly 170 can include a number of space adjustable heaters 140 that enable heat transfer between the susceptor heater assembly 170 and the substrate support 132. Each space adjustable heater 140 can be arranged laterally across the susceptor heater assembly 170 and define a zone 450 within the susceptor heater assembly 170 for locally providing additional heat to the area of the susceptor heater assembly 170 (and a portion of the main resistive heater 154) aligned with this zone 450. It is contemplated that in a given embodiment of the substrate support assembly 126, there can be hundreds of space adjustable heaters 140 configured for use with a full substrate (e.g., a 300 mm substrate). However, as described above, in embodiments, the processes and methods discussed herein can be used with a susceptor heater assembly 170 having only one zone, or such as greater than or about 2 zones, such as greater than or about 3 zones, such as greater than or about 4 zones, such as greater than or about 5 zones, such as greater than or about 6 zones, such as greater than or about 7 zones, such as greater than or about 8 zones, such as greater than or about 9 zones, such as greater than or about 10 zones, such as greater than or about 25 zones, such as greater than or about 50 zones, such as greater than or about 100 zones, such as greater than or about 200 zones, such as greater than or about 250 zones, such as greater than or about 300 zones, or any range or value therein. That is, as described above, the processes and methods of the present technology can provide improved control over one or more target substrate properties regardless of the number of zones, but can also significantly reduce the time necessary to determine the necessary susceptor properties for achieving a target substrate property profile with a heating assembly having a large number of zones.

[0058] ​The susceptor heater assembly 170 can also include a plurality of temperature sensors. Each temperature sensor can be disposed laterally across the susceptor heater assembly 170 such that each temperature sensor is within a zone 450 in the susceptor heater assembly 170 defined by the spatially adjustable heaters 140. Each temperature sensor can measure the temperature of the zone 450, in the spatially adjustable heater 140 disposed in this zone 450, and / or determine the operability of the spatially adjustable heater 140 in this zone 450. In addition, one or more temperature sensors located in a zone defined by the main resistive heater 154 can be used to measure the temperature of this zone and / or determine the operability of the main resistive heater 154. By individually and independently correcting the power provided to each spatially adjustable heater 140, and thus the heat transfer through the zone 450, a pixel-by-pixel susceptor temperature control approach can be achieved that enables specific points of the substrate 134 to be heated or cooled, thereby enabling truly addressable lateral control of the surface of the substrate 134.

[0059] The susceptor heater controller 178 can adjust the temperature of the spatially adjustable heaters 140 in the susceptor heater assembly 170 at each zone 450 relative to the other zones 450. Alternatively, the susceptor heater controller 178 adjusts the temperature of a group of spatially adjustable heaters 140 in the susceptor heater assembly 170 across a group of zones 450 relative to another group of zones 450. The susceptor heater controller 178 can switch on / off states and / or control the duty cycle of individual spatially adjustable heaters 140. Alternatively, the susceptor heater controller 178 can control the amount of power delivered to individual spatially adjustable heaters 140.

[0060] In one embodiment, the controller 148 receives temperature measurements from the plurality of temperature sensors. In one embodiment, the controller 148 can receive each temperature measurement as a resistance measurement. The heater controller 148 can then convert the resistance measurement to a temperature measurement based on a resistance-to-temperature conversion table. A separate resistance-to-temperature conversion table can be used for each temperature sensor. Alternatively, the same resistance-to-temperature conversion table can be used for the plurality of temperature sensors. The resistance-to-temperature conversion table can be generated by performing a calibration of the temperature sensor.

[0061] In one implementation, each zone 450 can be thermally isolated from adjacent zones 450, e.g., using thermal resistances 416, which can enable more precise temperature control. In another implementation, each zone 450 can be thermally connected to adjacent zones, thereby creating a similar (i.e., smooth or blended) temperature profile along the upper surface of the pedestal heater assembly 170. That is, in implementations, systems and methods in accordance with the present technology can utilize sophisticated controls to modulate the target temperature of adjacent zones of the pedestal heater, to achieve a customized profile of one or more substrate properties across the substrate, as will be discussed in greater detail below. Such controls can also be advantageous in that power saturation of individual zones or groups of zones can be minimized when a target zone is already at maximum or minimum power, instead utilizing the power of adjacent zones.

[0062] In implementations, each spatially adjustable heater 140 has a resistor 404 that terminates at terminals 406, 408. When current enters one terminal, such as the terminal labeled 406, and there is another terminal, such as the terminal labeled 408, current travels through the wire of the resistor 404 and generates heat. The heat released by the resistor 404 is proportional to the square of the current that passes through it.

[0063] The spatially adjustable heaters 140 can be configured in a pattern 490 to effectively create a heat distribution along the surface of the substrate support assembly 126. The pattern 490 can be symmetric about a midpoint, while providing clearance in and around the holes 422 for lift pins or other mechanical, fluidic, or electrical connections. Each spatially adjustable heater 140 can be controlled individually by the controller 148 or through the pedestal heater controller 178. The controller 148 / pedestal heater controller 178 can turn on individual spatially adjustable heaters 140 that define a heater 440; or groups of spatially adjustable heaters 140 that are grouped to define an inner wedge 462, a perimeter group 464, a pie region 460, or other geometric configurations, including non-adjacent configurations. Although the illustrated pattern is composed of smaller cells, the pattern can instead have larger and / or smaller cells, extend to the edges, or have other forms. For example, the spatially adjustable heaters 140 can be arranged in a grid that defines an array of temperature control zones 450 that are also arranged in an x-y grid pattern, a polygonal pattern (e.g., a hexagonal close-packed), a polar array pattern, a concentric channel pattern. It will be appreciated that the spatially adjustable heaters 140 can be activated in groups or individually, as described above.

[0064] In embodiments, the substrate support 126 can include one or more temperature sensors 405. The one or more temperature sensors 405 are positioned above or below the spatially adjustable heaters 140. As shown, in most cases, the temperature sensors 405 will be smaller than the spatially adjustable heaters 140. The temperature sensors 405 can terminate at terminals 407 and 409. Current can be sent through the temperature sensors 405 through the terminals, and the resistance of the temperature sensors 405 can be measured to determine the temperature of the spatially adjustable heaters 140. The material, wire length, and wire thickness of the temperature sensors 405 can be selected to control the temperature range to which the temperature sensors 405 are sensitive. However, in embodiments, other temperature sensors known in the art can be used.

[0065] The number and density of the spatially adjustable heaters 140 can facilitate control of the target substrate property across various points of the substrate surface. Further, individual correction of the target temperature of one spatially adjustable heater 140 relative to another spatially adjustable heater 140 enables control of the target substrate property at a corresponding location on the substrate surface without substantially affecting the temperature of adjacent areas unless desired. That is, in embodiments, and depending on the process recipe, chamber conditions, target substrate property, and magnitude of the correction, a correction to the target temperature or power of one spatially adjustable heater 140 can create a lateral effect on the substrate that extends to adjacent areas of the substrate beyond the area of the substrate directly above the area controlled by the spatially adjustable heater. This lateral dependence between adjacent areas of the substrate is referred to as a horizontal effect, while the effect created by a spatially adjustable heater 140 on the area of the substrate directly above the spatially adjustable heater 140 is referred to as a vertical effect. In embodiments, to adjust the target substrate property to a particular target profile across the substrate, the controller considers not only the vertical impact of a subsequent correction, but also the horizontal impact of the subsequent correction. Thus, in embodiments, the spatially adjustable heaters 140 allow for both lateral and vertical tuning of the target substrate property of the substrate 134 being processed on the substrate support assembly 126. That is, it should be understood that while "target substrate property" is discussed herein, the target substrate property can vary depending on the selected point or area across the substrate surface, and thus, the target substrate property can be independently controlled to be the same value or a different value at locations spaced apart on the substrate based on a substrate target profile discussed in more detail below.

[0066] Figure 5A block diagram representing the functionality of a substrate control architecture and system components in a system and method according to the present technology, which enables closed loop substrate control. Exemplary process signals that can be collected by the system 500 from the chamber 502 include, but are not limited to, the temperature of the showerhead 504 528, the distance between the showerhead and the substrate support assembly 508 (including the susceptor as described above) 530 (shown as 'h'), and the chamber pressure 532 provided by the throttle valve 512.

[0067] As described above, the substrate 506 is heated by multi-zone susceptor heaters 509a and 509b integrated into the substrate support assembly 509. Temperature data from one or more temperature sensors on the substrate 506 (which will be discussed in more detail below), or on the substrate support 509, or on both the substrate 506 and the substrate support 509, can be transmitted to the control interface module 518 over communication links 514, 515, and / or 516, which can be any of the temperature sensors discussed above. Additionally or alternatively, metrology data (such as thickness of one or more layers across the substrate, etch depth, etc.) can be transmitted to the processor 536 from the front end server 526 via the ECAT when metrology data is input into the system 500 from other chambers with embedded metrology capabilities or one or more communication links. The control interface module functionality of the susceptor heaters 509a and 509b can be implemented by a circuit board within the module 518. The module 518 is communicatively coupled with the front end server 526, either directly or through the tool control server 524. In an embodiment, the front end server 526, the tool control server 524, and the module 518 can be coupled through communication links 520 and 522.

[0068] The processor 536 can execute a closed loop substrate control algorithm based on real-time inputs collected from the chamber 502. Additional inputs can be collected from other hardware outside of the chamber, such as the heat exchanger (HX) / chiller 510 and the front end server 526. The HX / chiller 510 can provide temperature data 534 to the processor, and the closed loop substrate control algorithm residing within the processor 536 can provide HX / chiller target temperatures 534 to the HX / chiller 510. However, in an embodiment, the HX / chiller temperature can be corrected by the substrate control algorithm (e.g., treated as one or more heating zones) independent of any temperature data provided to the processor. Nonetheless, it should be clear that in an embodiment, the processor 536 is part of the substrate control architecture, rather than a separate processor for the substrate control system discussed herein.

[0069] In an embodiment, the processor 536 also includes one or more machine learning algorithms. In an embodiment, such as the substrate modeling algorithm 613b (discussed in more detail below with respect to FIG. 6), the machine learning algorithm can be trained using historical data from the chamber 502, the HX / chiller 510, and / or the front end server 526. Figure 6In more detail, a machine learning algorithm (as discussed in more detail below) is used to model the target substrate properties, and thus also to adjust the target substrate properties to the desired substrate target profile. The modeling process begins with the generation of appropriate tests (modeling test(s)) performed on a substrate in the processing chamber 502. The results of such tests are provided to the processor 536 and used by the machine learning algorithm running within the controller 148 to generate a characterization of the thermal or structural effects of the heating zones within the substrate support and other chamber conditions and factors on the regions or portions of the substrate. In embodiments, the processor can select the modeling test(s) based on initial substrate feedback, i.e., information about the target substrate properties during a previous substrate processing recipe, which can include substrate temperature data, data about the thickness of one or more layers across the substrate, substrate etch depth data, similar data, or combinations thereof. Further, in embodiments, the modeling can be performed only on a portion of the substrate, such as, in embodiments, a portion of the substrate exhibiting one or more properties different from the substrate target profile in that portion. However, it should be understood that, in embodiments, the entire substrate is modeled regardless of the initial substrate feedback.

[0070] In embodiments of the present technology, unlike conventional processes and methods, the substrate model derived by the substrate modeling algorithm 613b contains information of vertical and horizontal effects, where the vertical effects correspond to the local effects created by the one or more spatially adjustable heaters 140 on the substrate 506, and the horizontal effects represent the lateral dependence of a point or region on the substrate 506 with respect to adjacent points or regions on the substrate 506. Both the vertical and horizontal effects embed information about the loading imposed on the substrate by the chamber conditions, including but not limited to the temperature 528 of the showerhead 504, the distance 530 between the showerhead and the substrate support assembly 508, and the chamber pressure 532. Further, both the vertical and horizontal effects depend on the process recipe parameters, including but not limited to the dosing scheme of the gases injected into the chamber 502 by the showerhead 504, and the chemical reactions generally occurring within the chamber 502. Further, the vertical and horizontal effects depend on the properties of the substrate itself, which can be affected by unexpected chamber-to-chamber and pedestal-to-pedestal variations. Thus, the vertical and horizontal effects provide a personalized characterization of the substrate model in relation to the chamber, pedestal heaters, and process recipe. Thus, unlike conventional processes and methods, the substrate model derived with the methods in the present technology is specific to the chamber, pedestal, substrate, and process recipe being analyzed. Further, unlike conventional processes and methods, the methods in the present technology allow for the generation of an in-situ model of the substrate, thus eliminating the need for extensive and extremely complex preliminary engineering models of the substrate under nominal conditions and on a single nominal chamber. Thus, in embodiments, adjusting the target substrate properties to a specific target profile across the substrate 506 can require the controller to consider not only the vertical impact of the subsequent correction, but also the horizontal impact of the subsequent correction.

[0071] Furthermore, unlike conventional modeling techniques that are performed offline, the modeling process used herein and embedded in processor 536 allows for rapid generation of substrate models without user intervention. In embodiments, the system can prompt the user to confirm that running the modeling test is acceptable (e.g., confirming that the appropriate substrate is placed in the chamber), but user intervention is not necessary for selection and performance of the modeling test. In embodiments, substrate models can also be obtained in parallel on multiple chambers and / or on two or more substrate support assemblies 508 within the same chamber, rather than serially, thereby significantly improving the speed of the modeling process despite undesirable differences between chambers and / or between pedestals. Additionally or alternatively, substrate models can be shared between adjacent heaters, and / or even in heaters in other chambers, without user intervention. The result of the modeling process is a substrate model, which is then utilized by another machine learning algorithm, namely the substrate control algorithm 613a (which will be discussed in more detail below) to generate corrections to the target pedestal temperature and HX / chiller coolant temperature to ensure that all or part of the substrate feedback approaches or reaches the corresponding target substrate property of the substrate target profile. Figure 6

[0072] The server, which can be the tool control server 524, contains a controller, such as controller 148, configured to control chamber processing by control module 518 and control various chamber hardware, including the temperature of various heating zones. Controlling chamber hardware can include controlling the heater electronics to deliver a target amount of power to one or more heating zones independently of other heating zones or to correct their target heater temperature. Controlling chamber hardware can also include controlling the HX / chiller temperature, as in embodiments, the pedestal heater temperature can vary with changes in heater power and coolant flow. For example, if a zone or zones become too hot, it can be necessary to provide cooler fluid to lower the average temperature of the pedestal heaters to the target value and to deliver less power to the heaters in that zone or zones. On the other hand, if a zone or zones become too cold, it can be necessary to provide hotter fluid to increase the average temperature of the pedestal heaters and to deliver more power to the heaters in that zone or zones.

[0073] ​In implementations, when the target substrate properties are the thickness, etching depth, or a combination thereof across one or more layers of the substrate, and when the system includes one or more chambers with onboard metering capabilities, or when the target substrate properties are the temperature described above, it should be clear that the method for obtaining substrate feedback can be integrated into one or more control servers of system 500. Therefore, unlike conventional systems that require substrate removal and analysis, this technology can be used in conjunction with onboard metering chambers to continuously review and update the processing parameters that form the processing formulation. Furthermore, the continuous review and updating of processing parameters further reduces the time required for modeling and control steps, and requires almost no user intervention.

[0074] Figure 6 Shown by Figure 5 Further details of the model-based substrate control architecture 600 implemented in the system shown, used for independent control of each region of the substrate and the multi-zone base heater. (See attached image.) Figure 6 As shown, according to any one or more of the above embodiments, the substrate 602 is placed on the base 604 having one or more multi-zone heaters. In the embodiments, the substrate 602 may be as follows: Figure 7A and / or Figure 7B The substrate shown may be any substrate known in this art, depending on the properties of the target substrate.

[0075] like Figure 7A and Figure 7B As shown, in an embodiment, when one or more target substrates are of temperature characteristics, substrate 700 may contain one or more temperature sensors 702. In an embodiment, substrate 700 may contain one temperature sensor, such as more than or about two, such as more than or about three, such as more than or about four, such as more than or about five, such as more than or about six, such as more than or about seven, such as more than or about eight, such as more than or about nine, such as more than or about ten, such as more than or about eleven, such as more than or about twelve, such as more than or about thirteen, such as more than or about fourteen, such as more than or about fifteen, such as more than or about twenty, such as more than or about twenty-five, such as more than or about thirty, such as more than or about forty, such as more than or about fifty, or any range or value thereof.

[0076] Regardless of the number of temperature sensors 702, the temperature sensors can be randomly arranged on the substrate 700, evenly spaced across the substrate 700, or concentrically arranged around the substrate 700. In an embodiment, the temperature sensors 702 can be disposed on a surface 704 of the substrate 700, such as a surface opposite to a surface disposed on a base, which may also be referred to as a working surface. Additionally or alternatively, in an embodiment, the temperature sensors can be disposed between surface 704 and an opposing surface (e.g., disposed within the substrate 700, in...). Figure 1B(More clearly shown as first surface 135 and second surface 137). In embodiments, the number and / or horizontal position of temperature sensors 702 may correspond to the number and / or horizontal position of heaters 140 or their groups (e.g., 440, 460, 464). However, in embodiments, temperature sensors 702 may also be disposed across substrate 700, even if the horizontal position or number of heaters on the base differs.

[0077] In one embodiment, the temperature sensor 702 can be configured to effectively measure the heat distribution along the surface of the substrate 700. In another embodiment, the pattern can be symmetrical about the midpoint, or can be defined as wedge-shaped, surrounding a perimeter, or other geometric configurations, including discontinuous configurations. Although the illustrated pattern consists of small units, it can also have larger and / or smaller units, extend to the edges, or have other forms. For example, the temperature sensor 702 can be arranged in a grid pattern, defining an array of measurement areas, which can be arranged in an xy grid pattern, a polygonal pattern (e.g., a hexagonal tight package), a polar array pattern, or a concentric channel pattern.

[0078] For example, such as Figure 7B As shown, the superimposed xy grid 706 divides the substrate 700 into multiple regions 708. It should be understood that the grid 706 is not solidly formed on the substrate 700, but is shown as a potentially infinite number of spaced and adjacent regions or points on the visualized substrate 700. In embodiments, each region may have a temperature sensor 702 disposed therein, or only a portion of the region may have a temperature sensor 702 disposed therein. Furthermore, although... Figure 7B An xy grid is shown, but it should be understood that in implementations, the grid may be symmetrical about a midpoint, such as... Figure 4 The pattern shown on the substrate support (base) 126. Nevertheless, it should be understood that in the embodiment, the first region 710 may be spaced apart from the second region 712, the third region 714, and the fourth region 716. This first region may be a target region discussed in more detail below (e.g., a region selected to control the properties of a target substrate), and the second, third, and fourth regions are also spaced apart from each other. Furthermore, the fifth region 718 shows the region directly adjacent to the first region 710 in the xy plane of the substrate. Therefore, it should be understood that other unmarked regions may be described as their relationship to each other across surface 704 or within the substrate 700. Furthermore, in the embodiment, each region may be small enough to be considered a single point on or within the substrate 700.

[0079] Notwithstanding, the temperature sensors 702 can be wireless communication devices. In embodiments, the temperature sensors 702 can be radio frequency devices. For example, in embodiments, the temperature sensors 702 can communicate with the control module 518 using RFID communication technology. In embodiments, only the first substrate used to perform the modeling and control functions can include one or more temperature sensors 702. However, in embodiments, each substrate can be configured to sense and transmit temperature data of the location on the substrate, and can further transmit information identifying the temperature sensor 702 so as to associate the temperature information with a particular location on the substrate 700.

[0080] Regardless, in embodiments, the target substrate property can be any property other than temperature, or any property other than temperature. In such embodiments, any substrate known in the art can be used as the substrate 602. However, it should be appreciated that in embodiments, the substrate 602 should be selected as representative of the substrate desired to be processed on the pedestal 604 being modeled. That is, as discussed above, the present technology provides for optimization of a recipe on a pedestal-to-pedestal, side-to-side, and / or chamber-to-chamber basis between a particular pedestal / chamber and a substrate. Thus, in embodiments, the substrate should be selected to be similar or substantially identical in size, shape, and / or material to the desired substrate to be processed.

[0081] Notwithstanding the selection of the substrate, in embodiments, the target substrate property can be an etch depth, a thickness across one or more layers of the substrate, a deposition thickness, a combination thereof, or other similar substrate property. That is, it is known in the art that substrate temperature can contribute to the uniformity of etching and deposition. Thus, in embodiments, the initial substrate feedback and the target substrate property can be an etch depth, a thickness across one or more layers of the substrate, etc., or one or more of a combination thereof, but the correction is to a target heater temperature or heater power. As is known in the art, a series of differential equations can be utilized to determine the heater temperature or power required to affect the amount of etching or deposition. Thus, in embodiments, the controller 148 and the processor 536 can further include one or more machine learning algorithms to convert the initial substrate data to a corrected power or temperature output, such as the table values discussed above. In embodiments, the etch and deposition measurements can be made by in-cell or in-chamber metrology systems, or can be made in an adjacent chamber of the system 100, or can be made external to the system 100.

[0082] As described herein, embodiments of the above-described systems and methods can exist in a chamber or system that exhibits improved substrate control, e.g., improved regulation of a target substrate property during processing. Figure 8Exemplary operations in a method 800 of exhibiting increased substrate processing regulation are shown. The method 800 can also include one or more operations prior to the start of the method, including cleaning, deposition, or any other operations that can be performed prior to the operations. The method can further include a number of optional operations that can or can not be specifically relevant to some embodiments of methods in accordance with the technology. For example, many of the operations are described to provide a broader range of processes performed, but the operations are not critical to the technology, or can be performed by alternative methods, as will be further discussed below.

[0083] The method 800 can include Figure 5 and Figure 6 The operations shown schematically in the method 800, as described above, are used to improve substrate processing regulation between susceptor, between side, and / or between chamber during one or more substrate processing operations. For example, the method 800 includes an operation 802 that includes setting a substrate 602 on a susceptor 604, such as any one or more of the susceptor having two or more heating zones discussed above. In embodiments, each heating zone can be an independent heater and an independent temperature sensor. In embodiments, the substrate 602 can contain one or more feedback sensors, where each feedback sensor can be any sensor or data point that provides feedback regarding a value of a target substrate property at the location of the sensor. The feedback sensors can be aligned with the various zones of the susceptor 604, or in some embodiments can be randomly spaced. In embodiments, the feedback sensors are temperature sensors located on the substrate as previously described. However, in embodiments, the substrate feedback 628 can instead be metrology data, such as a thickness of one or more layers across the substrate, an etch depth, a deposition depth, or similar data located at one or more points or zones of the substrate 602.

[0084] Nonetheless, in embodiments, the substrate 602 at operation 804 undergoes one or more processing steps based on an initial substrate processing recipe. In embodiments, the initial substrate processing recipe is based on substrate processing requirements and is selected based on engineering first principles, or a standard recipe for the selected substrate, chamber, and / or process. The processing steps can include etching, deposition, polishing, cleaning, combinations thereof, and the like. In embodiments, the one or more processing steps include at least one of deposition and etching, alone or in combination with other processing steps. Regardless of the one or more processing steps selected, the target susceptor heater temperature 610 and the target temperature of the HX / chiller are set to an initial temperature by the heater property control 616, the heater electronics 618, and / or the heat exchanger 606. The initial susceptor temperature and the initial HX / chiller temperature can be randomly selected within a range suitable for the initial substrate processing recipe, or can be recommended temperature values based on engineering first principles for the particular susceptor, side, process requirements, and / or chamber.

[0085] That is, in embodiments, the heater electronics 618 provide power to the heater to enable independent control of one or more heating zones. If desired, the heat exchanger / chiller 606 supplies fluid to maintain the susceptor temperature within a certain operational average temperature. In embodiments, the initial susceptor temperature is a uniform temperature profile across the susceptor. Real-time temperature data 608 collected from the susceptor temperature sensors during the processing operation 804 is provided to a closed loop heater temperature control algorithm 614.

[0086] Although one or more processing steps or temperatures are selected, the method collects initial substrate feedback 628 at operation 806. The initial substrate feedback includes data indicative of one or more substrate properties. For example, in embodiments, the one or more substrate properties can include substrate temperature, thickness of one or more layers across the substrate, etch depth, deposition thickness, similar properties, or combinations thereof. In embodiments, such substrate properties and data representative thereof can be obtained from one or more metrology systems. In embodiments, the one or more metrology systems can be integrated into the processing system, such as the processing system 100, or can be external to the processing system (e.g., a substrate is removed for testing and measurement data is imported). That is, although the collection of temperatures has been discussed separately from other substrate properties up to this point, it should be clear that a substrate including one or more temperature sensors, such as the substrate 602 in Figure 7A and Figure 7B 702, can be used to collect temperature data and can also be subjected to metrology testing. Thus, in embodiments, one or more temperature sensors (e.g., 702) can be disposed in non-processing regions of the substrate (e.g., 602 in Figure 6 and / or 700 in Figure 7A and Figure 7B ).

[0087] The initial substrate data is then used in one or more ways to tailor the method 800 to the particular susceptor, chamber, and / or side. For example, as described above, the substrate control architecture 600, which can be integrated into the controller 148 and / or the processor 536, contains one or more modeling tests based on initial substrate feedback and / or initial substrate and / or chamber conditions as shown in the substrate modeling algorithm 613b within the closed loop substrate control 612. In embodiments, the processor 536 can not utilize the initial substrate feedback to select one or more modeling tests for the substrate modeling algorithm 613b, but can continue to model all or a portion of the interaction between the substrate 602 and the susceptor 604 without regard to the initial substrate feedback. However, in embodiments, the substrate control architecture 600 obtains the initial substrate feedback 628 from the substrate 602 and utilizes the initial substrate feedback 628 to select one or more modeling tests.

[0088] In such embodiments, the substrate control architecture 600 can select the modeled tests performed on one or more substrate zones requiring a change in susceptor heater temperature or power, i.e., substrate zones having substrate feedback that differs from the substrate target profile 611 in the respective zone by an amount greater than a predetermined level. In embodiments, the predetermined level can be due entirely or in part to noise, and the predetermined amount can thus be greater than or equal to a noise value. Additionally or alternatively, in embodiments, the predetermined amount can be a difference between the substrate feedback and a target substrate feedback that is greater than or about 1%, such as greater than or about 2%, such as greater than or about 3%, such as greater than or about 4%, such as greater than or about 5%, such as greater than or about 6%, such as greater than or about 7%, such as greater than or about 8%, such as greater than or about 9%, such as greater than or about 10%, such as greater than or about 11%, such as greater than or about 12%, such as greater than or about 13%, such as greater than or about 14%, such as greater than or about 15%, or any range or value therebetween. However, as described above, in embodiments, one or more models can be obtained that model all points or randomly selected points along the substrate surface regardless of the initial substrate feedback.

[0089] In embodiments, some or all of the changes in target substrate properties relative to the substrate target profile can be due to noise. In such embodiments, the noise can be determined during the initial feedback or the modeling operation, and can be defined as a change in feedback between subsequent tests or modeling operations that do not have a process change. Thus, the noise can be a difference in signal or feedback due to measurement sensitivity, process inconsistencies, or the like. Nonetheless, in embodiments, the calculation of the substrate feedback noise level can be based on a comparison between the initial substrate feedback and substrate feedback data derived from one or more modeled tests. In embodiments, the feedback noise level is included as part of the substrate model provided by the substrate modeling algorithm to the substrate control algorithm. Thus, in embodiments, one or more iterations can stop updating the process recipe as the substrate feedback is obtained, any one or more of the above changes being within a range between the target substrate properties and the substrate target profile, as such changes can be due entirely or in part to noise.

[0090] In embodiments, the substrate control architecture can select only one modeled test, or can select more than one modeled test, such as greater than or about two, such as greater than or about 3, such as greater than or about 4, such as greater than or about 5, such as greater than or about 6, such as greater than or about 7, such as greater than or about 8, such as greater than or about 9, such as greater than or about 10 modeled tests, or any range or value therebetween. Nonetheless, one or more modeled tests are used, such as aggregated if more than one test, to provide a substrate model for the substrate and susceptor being tested at operation 808.

[0091] As noted above, due to the significant improvements in efficiency and customization afforded by the present technology, the processes and methods discussed herein can be performed in multiple chambers for each pedestal in the chamber. However, in embodiments, the substrate model can be used for each pedestal in a chamber, or for each chamber side in multiple chambers (e.g., using this model for similarly positioned pedestals in adjacent chambers or multiple similarly formed chambers). Further, while the methods and systems have been discussed as utilizing a single pedestal, it should be understood that the systems and methods discussed herein are also applicable for use when a chamber includes more than one pedestal, or for performing testing on one or more independent chambers containing one or more pedestals. In such embodiments, the methods 800 and systems discussed herein can be run simultaneously on each pedestal or on each chamber, or can be run sequentially. Nonetheless, it should be clear that multiple pedestals 604 and substrates 602 can be controlled simultaneously with the substrate control architecture 600 according to embodiments herein. In one such embodiment, the modeled tests and substrate model can be performed separately based on the respective substrates and substrate feedback, and thus alternative control and ultimately potentially different recipes can be provided for each pedestal, chamber, and / or side being tested in order to provide customized substrate control and conditioning.

[0092] Accordingly, in embodiments, the substrate feedback corresponding to one or more modeled tests performed on each particular pedestal, chamber, and / or side can be provided to the substrate modeling algorithm 613b sequentially or simultaneously. This provides a further improvement over known methods in that operations 806 and 808 can be decoupled in the sense that these two operations can be performed and completed in two different time periods. Additionally or alternatively, this allows for testing to be performed simultaneously on multiple pedestals, chambers, and / or sides while allowing each test to be performed independently, thereby further improving the speed and efficiency of the processes and systems.

[0093] Regardless of the modeled test selected, the modeled test can utilize a machine learning algorithm, such as the substrate modeling algorithm 613b or similar as described above, to model how changes in temperature or power of one or more heater zones and chamber and process conditions affect various substrate regions. That is, as noted previously, the present technology provides for modeling of substrate regions disposed directly above a particular heater or heating zone (e.g., vertical control as described above) as well as substrate regions disposed above and laterally (e.g., horizontally as described above) adjacent to (e.g., substrate regions covering the boundaries of the respective heater or heating zone) or even laterally spaced apart from (e.g., substrate regions not covering the heater or heating zone or the boundaries of the heater or heating zone). Figure 7A and Figure 7B the x-y plane as shown, the horizontal effects and / or control as described above) adjacent to (e.g., substrate regions covering the boundaries of the respective heater or heating zone) or even laterally spaced apart from (e.g., substrate regions not covering the heater or heating zone or the boundaries of the heater or heating zone).

[0094] Thus, in embodiments, the one or more modeling tests can be used to produce an accurate vertical and horizontal representation of the behavior of the substrate based on the chamber and pedestal conditions. That is, unlike conventional processes that only consider the temperature of the pedestal, the modeling tests and substrate modeling algorithm 613b are able to consider any chamber and pedestal conditions that are present, including the material properties of the substrate, the desired processing recipe, and any other factors discussed above. As previously mentioned, the vertical effects provide information about the influence of individual or groups of locally heated zones on the substrate, while the horizontal effects describe the interaction between adjacent regions on the surface of the substrate. The use of the horizontal effects to model the behavior of the substrate in the x-y plane is a major shift from conventional techniques, as the determination of any horizontal effects allows for a significant test time reduction and major performance improvement during the substrate control operation 812. Furthermore, unlike conventional processes and methods, the models produced with the methods in the present technology are produced custom to the particular process recipe, chamber, and pedestal used. Thus, unlike conventional methods, the results obtained with the methods discussed herein are not susceptible to undesirable and unexpected chamber-to-chamber, side-to-side, and pedestal-to-pedestal variations.

[0095] In embodiments, the substrate target profile 611 represents the desired processing result on the substrate surface at each discrete point or region. Thus, if the target substrate property is temperature, the substrate target profile represents the desired substrate temperature across the substrate surface. In embodiments, if the target substrate property is temperature, the substrate target profile can be selected to match the initial pedestal temperature, or can be an optimal temperature profile determined prior to processing. Additionally or alternatively, the substrate target profile can represent the desired processing result of one or more other substrate properties discussed above on the substrate. In such aspects, unlike conventional methods, the closed loop substrate control 612 can be used for any target substrate property, as the information about the behavior of the target substrate property is contained within the model produced by the substrate modeling algorithm 613b, regardless of the target substrate property. Nonetheless, as mentioned above, the behavior of the target substrate property can be controlled by controlling the heater power or heater temperature, regardless of the target substrate property.

[0096] As mentioned above, regardless of the substrate target profile 611, the present technology has found that a consistent substrate temperature across the substrate provides improved substrate processing uniformity, even if such substrate temperature results in non-uniformity of the pedestal heater or heating zone temperature. That is, the processes and methods of the present technology utilize the modeling and direct substrate feedback discussed to overcome inconsistencies in the chamber, pedestal, chamber side, or the like, which can require inconsistent heater temperatures across various heaters and / or heating zones. For example, at operation 810, the data representing the initial substrate feedback and the substrate model produced by the one or more modeling tests of the substrate modeling algorithm 613b are provided to the substrate control algorithm 613a contained in the substrate control architecture 600 / 612.

[0097] Based on the initial substrate feedback and the substrate model, the substrate control algorithm 613a (also referred to as the processor running such algorithm) changes the initial substrate processing recipe by correcting the heater power or target heater temperature at one or more susceptor heating zones at operation 812 and / or by correcting the target temperature 620 of the HX / chiller 606, providing an updated substrate processing recipe. As described above, due to the substrate model provided after conducting one or more modeling tests, the corrections can be applied to one or more heaters or heating zones that are directly underneath one or more target substrate regions (e.g., substrate regions containing target substrate properties), adjacent to one or more target substrate regions, or spaced apart from one or more target regions. That is, due to the modeling tests conducted, the substrate control algorithm 613a can initially consider more than one option to adjust the substrate to the substrate target profile.

[0098] For example, as just one example, a first option can be to increase or decrease the target temperature of a heater or heating zone directly underneath a target substrate region (e.g., a vertical effect as described above). However, in one example, the heater or heating zone can already be at maximum or minimum power such that the heater or heating zone cannot meet the required target temperature change. Alternatively, in another example, a first target substrate region can have a temperature higher than the target substrate profile for the corresponding region, but a second target substrate region adjacent to the first target substrate region can have a temperature lower than the target substrate profile for the corresponding region. In such an example, correcting the heater or heating zone directly underneath the first target substrate region can have a negative effect on the second target substrate region. Thus, in one or both examples, the substrate control algorithm 613a can reject the first correction and utilize an additional option, such as correcting an adjacent heater or heating zone (such as a heater away from the second target substrate region in the second example), or correcting more than one heater or heating zone with less power or heat. Thus, it should be clear that the substrate control algorithm 613a of the present technology provides a significant improvement over the prior art, which requires manual adjustments on a region-by-region and / or susceptor-by-susceptor basis.

[0099] In embodiments, the number of target substrate regions can be at least about 1 region, such as greater than or about 2 regions, such as greater than or about 3 regions, such as greater than or about 4 regions, such as greater than or about 5 regions, such as greater than or about 6 regions, such as greater than or about 7 regions, such as greater than or about 8 regions, such as greater than or about 9 regions, such as greater than or about 10 regions, such as greater than or about 15 regions, such as greater than or about 20 regions, such as greater than or about 25 regions, such as greater than or about 30 regions, such as greater than or about 40 regions, such as greater than or about 50 regions, or any range or value therebetween. As described above, in embodiments, the target substrate regions can be any one or more discrete points across the substrate 602, or can be regions generally mirroring the shape of the heater or heating zone underneath the susceptor 604.

[0100] However, additionally or alternatively, in embodiments, the number of target substrate regions can be based on the number of regions that differ from the substrate target profile. Thus, in embodiments, the target substrate regions and number thereof can be all or a portion of the substrate regions that differ from the substrate target profile by greater than or about 1%, such as greater than or about 2%, such as greater than or about 3%, such as greater than or about 4%, such as greater than or about 5%, such as greater than or about 6%, such as greater than or about 7%, such as greater than or about 8%, such as greater than or about 9%, such as greater than or about 10%, such as greater than or about 11%, such as greater than or about 12%, such as greater than or about 13%, such as greater than or about 14%, such as greater than or about 15%, or any range or value therebetween.

[0101] Further, in embodiments, the number of corrected heaters or heating zones can be at least about 1 heater or heating zone, such as greater than or about 2, such as greater than or about 3, such as greater than or about 4, such as greater than or about 5, such as greater than or about 6, such as greater than or about 7, such as greater than or about 8, such as greater than or about 9, such as greater than or about 10, such as greater than or about 15, such as greater than or about 20, such as greater than or about 25, such as greater than or about 30, such as greater than or about 40, such as greater than or about 50, such as greater than or about 75, such as greater than or about 100 heaters or heating zones, or any range or value therebetween.

[0102] However, in embodiments, it should be clear that more than one heating zone or heater can be corrected for each target substrate region, or that one heating zone or heater can be corrected for multiple target substrate regions. Thus, in embodiments, the number of heaters or heating zones to be corrected can be less than, equal to, or greater than the number of target substrate regions.

[0103] Nevertheless, in order to adjust the substrate, the substrate control algorithm 613a generates one or more corrections to the target heater temperature 610. However, as stated above, it should be clear that the target heater temperature 610 can also be generated as the base heater power, since the substrate control architecture 600 used herein contains a value for the base heater power required to achieve a specific heater temperature. In any case, the target heater temperature 610 is provided to the heater temperature controller 614 and output to the base 604 as a heater property controller 616 (e.g., temperature or power) via the heater electronics 618.

[0104] like Figure 6 As shown, in one embodiment, the heater temperature controller 614 can be configured to regulate the temperature of each heater or heater zone to a corresponding target value contained within 610. In one embodiment, the closed-loop heater temperature controller 614 can receive heater temperature feedback 608 from the base 604. While it has been found that a uniform substrate target profile may require non-uniform temperatures across the surface of the base 604, this closed-loop heater temperature control 614 can serve as a valuable method for automatically verifying that the target heater temperature 610 provided by the closed-loop substrate control 612 has been achieved. Therefore, this closed-loop heater temperature control allows for a rapid and effective method for verifying process conditions and evaluating the response of the base 604 to the heater characteristic control 616.

[0105] In this implementation, the updated processing formulation may be sufficient to achieve the target substrate profile. For example, in this implementation, substrate 602 is processed according to the updated substrate processing formulation; this substrate may be the same substrate as in operations 802 to 808 or a different substrate. After processing substrate 602 according to the updated processing formulation, updated substrate feedback on one or more target substrate properties may be collected. The updated substrate feedback is then compared with the target substrate profile 611. In this implementation, based on the updated substrate processing formulation, all or substantially all of the target substrate regions can achieve the requirement of being positioned within the target substrate profile 611.

[0106] However, in implementation, one or more target substrate regions (which may be the same region that was previously corrected, or may be new regions) may differ from the substrate target profile (or average) in this region by more than or about 1%, such as more than or about 2%, such as more than or about 3%, such as more than or about 4%, such as more than or about 5%, such as more than or about 6%, such as more than or about 7%, such as more than or about 8%, such as more than or about 9%, such as more than or about 10%, such as more than or about 11%, such as more than or about 12%, such as more than or about 13%, such as more than or about 14%, such as more than or about 15%, or any range or value therebetween.

[0107] In such implementations, operations 810 and 812 can be repeated with further updated substrate feedback and further updated processing recipes until a desired level of substrate property adjustment of the substrate target profile is achieved. For example, if one or more target substrate regions are outside of the substrate target profile 611, further updated substrate feedback can be provided to the substrate control algorithm 613a. However, the present technology surprisingly finds that, in implementations, no new modeling is needed because the interaction between the substrate 602 and the chamber remains unchanged from the modeling step. Thus, the substrate control algorithm 613a modifies the updated substrate processing recipe by correcting the heater power or target heater temperature at one or more heating zones in repeated operation 812, thereby providing a second updated substrate processing recipe. In other implementations, if the expected substrate changes derived based on the previous knowledge of the substrate model and the last corrections made to the target susceptor heater temperature within the closed loop substrate controller 612 are significantly different from the actual updated substrate feedback, the substrate modeling algorithm 621 can be utilized to correct the substrate model. Such corrections are subsumed in operation 812. As will be clear to one skilled in the art, the corrections and re-checking / comparing of the updated substrate feedback can thus be considered an iterative process in implementations, and thus a third, fourth, fifth, or more such iteration of the substrate feedback, corrections, and updated substrate processing recipe can be made, if necessary, to achieve the substrate target profile 611. However, in implementations, the correction and re-checking iterative process can be made for less than or about five iterations, such as less than or about four iterations, such as less than or about three iterations, such as less than or about two iterations, such as about one iteration, or any value therebetween.

[0108] Regardless of the number of iterations, if any, after the “final” processing recipe is achieved (e.g., in the case that all or substantially all target substrate regions meet the requirements provided within the substrate target profile), the system is set to production. Thus, further, the final substrate processing recipe can be utilized for commercial processing of substrates, such as more than or about 5, such as more than or about 10, such as more than or about 50, such as more than or about 100, or any number of substrates.

[0109] For example, in such “final” processing recipes, a substrate, such as a substrate 700, Figure 7B may have a first region 710 and a second region 712 spaced apart from the first region. The temperature can vary from the first region 710 to the second region by less than or about 10%, such as less than or about 9%, such as less than or about 8%, such as less than or about 7%, such as less than or about 6%, such as less than or about 5%, such as less than or about 4%, such as less than or about 3%, such as less than or about 2%, such as less than or about 1%, such as less than or about 0.5%, such as less than or about 0.25%, such as less than or about 0.1%, or any range or value therebetween.

[0110] Nevertheless, as Figure 9 shown in the implementation, the systems and methods can be wholly or partially performed by a processor, which can be incorporated as part of the aforementioned controller 148 and / or processor 536. For example, the computer system 900 can represent some components of the controller or computer system described herein. Figure 9 A schematic diagram of one implementation of a computer system 900 is provided, which can perform the methods provided by various other implementations described herein. Figure 9 The components are merely illustrative that any or all of them can be used in a suitable setting. Thus, Figure 9 The various system components shown are presented to provide an example of how the various system elements can be implemented in a relatively separated or relatively more integrated manner.

[0111] The computer system 900 shown includes hardware elements that can be electrically coupled via a bus 905 (or can otherwise be in communication, as appropriate) the bus 905 also being connected to the controller 148. The hardware elements can include a processing unit(s) 910 including, without limitation, one or more processors, such as one or more central processing units (CPU), graphical processing units (GPU), dedicated processors (e.g., digital signal processing chips, graphics acceleration processors, etc.); one or more input devices 915, which can include, without limitation, a keyboard, a touchscreen, a receiver, a motion sensor, a camera, a smart card reader, a contactless media reader, etc.; and one or more output devices 920, which can include, without limitation, a display device, a speaker, a printer, a writing module, etc.

[0112] The computer system 900 can also include (and / or be in communication with) one or more non-transitory storage devices 925, which can include, without limitation, local and / or network accessible storage, and / or can include, without limitation, a disk drive, a drive array, an optical storage device, a solid-state storage device such as a random access memory (“RAM”) and / or a read-only memory (“ROM”), which can be programmable, flash- updateable, and / or the like. Such storage devices can be configured to implement any appropriate data stores, including without limitation, various file systems, database structures, and / or the like.

[0113] The computer system 900 can also include a communication interface 930 that can include, but is not limited to, a modem, a network card (wireless or wired), an infrared communication device, a wireless communication device, and / or a chipset (such as a Bluetooth™ device, a 802.11 device, a Wi-Fi device, a WiMAX device, a NFC device, a cellular communication facility, etc.), and / or the like. The communication interface 930 can permit data to be exchanged with a network (such as the network described below, to name one example), other computer systems, and / or any other devices described herein. In many embodiments, the computer system 900 will further include a non-transitory working memory 935, which can include a RAM or ROM device, as described above.

[0114] The computer system 900 can also include software elements, shown as being currently located within the working memory 935, including an operating system 940, device drivers, executable libraries, and / or other code, such as one or more application programs 945, which can include processor programs provided by various embodiments, and / or can be designed to implement methods, and / or configure systems provided by other embodiments, as described herein. By way of example, one or more programs described with respect to the above-described methods or systems can be implemented as code and / or instructions executable by a computer (and / or a processor within a computer); in an aspect, such dedicated / specific-purpose code and / or instructions can be used to configure and / or adapt a computing device to be a special-purpose computer configured to carry out one or more operations in accordance with the described methods.

[0115] The set of instructions and / or code might be stored in a computer-readable storage medium, such as the storage device(s) 925 described above. In some cases, the storage medium might be incorporated within a computer system, such as the computer system 900. In other embodiments, the storage medium might be separate from a computer system (e.g., a removable medium, such as a compact disc), and / or provided in an installation package, such that the storage medium can be used to program, configure, and / or adapt a special-purpose computer with the instructions / code stored thereon. These instructions might take the form of executable program code, which is executable by the computer system 900 and / or might take the form of source code, which, upon compilation and / or installation on the computer system 900 (e.g., using any of a variety of available compilers, installation programs, compression / decompression utilities, etc.), then takes the form of executable program code.

[0116] Substantial variations can be made in accordance with specific requirements. For example, customized hardware might also be used, and / or particular elements might be implemented in hardware, software (including portable software, such as applets, etc.), or both. Further, connection to other computing devices such as network input / output devices can be employed.

[0117] Some embodiments can employ a computer system (such as the computer system 900) to perform methods in accordance with the disclosure. For example, computer system 900 can perform some or all of the procedures as a result of

[0118] The terms "machine-readable medium" and "computer-readable medium," as used as herein, refer to any medium that participates in providing data that causes a machine to operate in a specific fashion. In an implementation where a computer system 900 is implemented as a stand-alone device according to some embodiments, various computer-readable media might be involved in providing instructions / code to processing unit 910 for execution and / or might be used to store and / or

[0119] Common forms of physical and / or tangible computer-readable media include, for example, a magnetic medium, an optical medium, or any other physical medium with patterns of holes, a RAM, a PROM, an EPROM, a FLASH- EPROM, any other memory chip or cartridge, a carrier wave as described hereinafter, or any other medium from which a computer can read instructions and / or code appropriate to the process.

[0120] The communications interface 930 (and / or components thereof) will generally receive signals, and the bus 905 can then convey the signals (and / or the data, instructions, etc. carried by the signals) to the working memory 935, from which the processor 910 retrieves and executes the instructions. The instructions received by the working memory 935 can be stored on the non-transitory storage 925 either before or after execution by the processing unit 910 and controller 148.

[0121] In the implementations described above, the procedures can be described in a particular order. It should be understood that in alternative implementations, the procedures can be performed in an order different than that described. Also, it should be understood that the described implementations can be implemented by hardware and / or software components (including integrated circuits, processing units, etc.) and / or can be embodied in machine- readable or computer-readable instructions, which can be used to cause a machine (such as a general or special purpose processor or logic circuitry) to perform the processes. These machine-readable instructions can be stored on one or more machine-readable media, such as CD-ROMs or other type of optical discs, floppy disks, ROMs, RAMs, EPROMs, EEPROMs, magnetic or optical cards, flash memory, or other type of media suitable for storing electronic instructions. Alternatively, the processes can be performed by a combination of hardware and software.

[0122] The methods, systems, devices, diagrams, and tables discussed herein are examples. Various configurations can omit, substitute, or add various procedures or components. For instance, in alternative configurations, the methods can be performed in an order different from that described, and / or various stages can be added, omitted, and / or combined. Also, features described with respect to certain configurations can be combined in various other configurations. Different aspects and elements of the configurations can be combined in a similar manner. Also, technology evolves and, thus, many of the elements are examples and do not limit the scope of the disclosure or claims. In addition, the technology discussed herein can provide different results with different usage contexts, and in other instances, results can be more or less desirable depending on the context in which the technology is used.

[0123] While the illustrative and presently preferred embodiments of the disclosed systems, methods, and machine-readable media have been described in detail herein, it is expressly noted that the inventive concepts can be otherwise varied and embodied in many different forms, and that the appended claims are intended to encompass such variations as fall within the scope of the present inventive concepts, except insofar as limited by prior art.

[0124] In the preceding description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various implementations of the present technology. However, it will be apparent to one skilled in the art that certain implementations can be practiced without some or all of these details.

[0125] Having disclosed several embodiments, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Additionally, numerous well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Accordingly, the foregoing description is not intended to be limiting. For example, the above description does not imply that the techniques of the present technology are necessarily limited to the described embodiments, but rather that the techniques of the present technology can be practiced with any number of other embodiments. The drawings are not necessarily to scale; emphasis has instead been placed upon illustrating the principles of the various embodiments. The terms “coupled” and “connected,” as used in the specification, can mean to be directly connected to or in communication with. However, it should be understood that, in some embodiments, there can be intermediate fluidic or electrical elements between devices that are “coupled” or “connected” so that the coupled or connected devices can not be directly communicating with each other.

[0126] Where a range of values is provided, it is understood that each intervening value, to the minimum resolvable between the upper and lower limit, is also specifically disclosed. Any stated range of values includes all values between the state upper and lower values whether or not specifically stated. The minimum resolvable between the upper and lower limits of this range is included in the range. The upper and lower limits of these smaller ranges can independently be included or excluded in the range, and each range where either, neither, or both extremes are included in the smaller range is also encompassed. Where the stated range includes one or both of the limits, ranges excluding either or both of the limits are also included.

[0127] As used herein and in the appended claims, the singular forms “a,” “an,” and “the” include plural references unless the context clearly dictates otherwise. Thus, for example, reference to “a model” includes a plurality of such models, and reference to “the target property” includes reference to one or more properties known to one of skill in the art, and equivalents thereof, and the like.

[0128] Further, the words “comprise(s),” “contain(s),” “include(s),” “have(s),” and the like, when used in the present specification and in the following claims, are each intended to mean that there are the features, integers, components, or elements listed in the specification and the claims but do not preclude the presence or addition of one or more other features, integers, components, elements, actions, operations, acts, or groups thereof.

Claims

1. A method for controlling substrate processing, the method comprising: A substrate is placed on a base, wherein the base includes multiple heating zones, each of which has an independent heater; The substrate is processed according to an initial substrate processing formula, the initial substrate processing formula comprising one or more substrate processing steps and an initial substrate temperature; Collect initial substrate feedback on one or more substrate properties; The data representing the initial substrate feedback is provided as the first input to the substrate control algorithm; A substrate model is generated based on one or more modeling tests of the substrate; The generated substrate model is provided as a second input to the substrate control algorithm; The power or temperature of one or more heaters and / or the temperature of the heat exchanger / cooler in the heating zone are corrected to control the target substrate properties in one or more substrate regions, wherein the correction is calculated and performed by a processor running the substrate control algorithm based on the first input and the second input; and The initial substrate processing formula is updated based on the correction to form an updated processing formula.

2. The method of claim 1, wherein the one or more substrate properties include substrate temperature measured at two or more spaced regions on the substrate, thickness of one or more layers across the substrate, substrate etching depth, or a combination thereof.

3. The method of claim 2, wherein the one or more substrates are of substrate temperature, and wherein the substrate includes a plurality of temperature sensors, and wherein the substrate temperature is provided at each temperature sensor.

4. The method of claim 3, wherein the heater power or heater temperature and / or heat exchanger / cooler temperature are calibrated to control the target substrate properties in one or more of the substrate regions corresponding to a portion or each of the plurality of temperature sensors.

5. The method of claim 2, wherein the one or more substrate properties are the thickness of one or more layers across the substrate, the substrate etching depth, or a combination thereof, and wherein the heater power or heater temperature and / or heat exchanger / cooler temperature are corrected to control the target substrate properties at a portion or each of the two or more spaced-apart regions.

6. The method of claim 1, wherein the one or more modeling tests comprise correcting the heater power or heater temperature of one or more heating zones and / or the heat exchanger / cooler temperature.

7. The method of claim 1, wherein the plurality of heating zones comprises more than or about 5 heating zones.

8. The method of claim 6, wherein the one or more modeling tests are automatically selected based on the initial substrate feedback, or wherein the one or more modeling tests are generated by a substrate modeling algorithm, and wherein the correction is calculated and performed by a processor running the substrate modeling algorithm.

9. The method of claim 1, further comprising: processing the substrate according to the update processing formula, and collecting updated substrate feedback on the properties of the one or more substrates.

10. The method of claim 1, wherein the substrate comprises two or more regions, at least one of the two or more regions comprises the target substrate property, wherein the corrected heater power or heater temperature and / or heat exchanger / cooler temperature is in one or more heating zones, the one or more heating zones being horizontally configured to be adjacent to the region comprising the target substrate property.

11. The method of claim 9, further comprising: comparing the updated substrate feedback with a substrate target profile, and if the difference between the updated substrate feedback and the substrate target profile is greater than a predetermined level; Further corrections are made to the heater power or heater temperature and / or the heat exchanger / cooler temperature in one or more of the heating zones to control the target substrate properties in one or more of the substrate regions, wherein the further corrections are calculated and performed by the processor running the substrate control algorithm based on data representing the updated substrate feedback and the second input; and The update processing formula is updated based on the further corrections to form a second update processing formula.

12. The method of claim 11, wherein the predetermined level is calculated based on one or more modeling tests selected to estimate the noise value, wherein the predetermined level is greater than or approximately equal to the level corresponding to the noise value.

13. The method of claim 11, further comprising: updating the substrate model based on the correction.

14. The method of claim 11, further comprising: processing the substrate according to the second update processing formula, and collecting second update substrate feedback on the properties of the one or more substrates. The second updated substrate feedback is compared with the substrate target contour, and if the difference between the second updated substrate feedback and the substrate target contour is greater than or about 5%, A third correction is then performed on the heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the heating zones to control the target substrate properties of one or more of the substrate regions, wherein the third correction is calculated and executed by the processor running the substrate control algorithm based on data representing the second updated substrate feedback and the second input; and The third update processing formula is formed by updating the second update processing formula based on the third correction.

15. A semiconductor processing system, the semiconductor processing system comprising: A base comprising a plurality of heating zones configured to support a substrate; A controller configured to execute a baseboard control algorithm as part of a baseboard control architecture, and: The substrate is processed according to an initial substrate processing formula, the initial substrate processing formula comprising one or more substrate processing steps and an initial substrate temperature; Collect initial substrate feedback on one or more substrate properties; The data representing the initial substrate feedback is provided as the first input to the substrate control algorithm; A substrate model is generated based on one or more modeling tests of the substrate; The generated substrate model is provided as the second input to the substrate control algorithm; Based on the first input and the second input, the heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the heating zones are corrected to control the target substrate properties in one or more substrate regions; and The initial substrate processing formula is updated based on the correction to form an updated processing formula.

16. The semiconductor processing system of claim 15, wherein each heating zone includes a temperature sensor.

17. The semiconductor processing system of claim 15, wherein the substrate control algorithm is a closed-loop algorithm.

18. The semiconductor processing system of claim 15, wherein the one or more modeling tests are selected from multiple modeling tests generated by a substrate modeling algorithm.

19. A semiconductor processing system, the semiconductor processing system comprising: The main body of the chamber; A first base, configured to support a first substrate, the first base including a first plurality of heating zones disposed in the chamber body; A second base, configured to support a second substrate, the second base including a second plurality of heating zones disposed in the chamber body; A controller configured to execute a baseboard control algorithm, which is part of a closed-loop baseboard control algorithm, and: The first substrate and the second substrate are processed according to an initial substrate processing formula, wherein the initial substrate processing formula includes one or more substrate processing steps and an initial substrate temperature; Initial substrate feedback on the properties of one or more substrates of the first substrate and the second substrate; The initial substrate feedback data representing the first substrate and the second substrate is provided to the substrate control algorithm; A first substrate model and a second substrate model are generated based on one or more modeling tests of the first substrate and the second substrate; The first substrate model and the second substrate model are provided to the substrate control algorithm; The heater power or heater temperature and / or heat exchanger / cooler temperature of one or more of the first and second plurality of heating zones are corrected to control target substrate properties in one or more substrate regions of the first and second substrates, wherein the correction is calculated and performed by a processor running the substrate control algorithm based on the initial substrate feedback of the first substrate and the first substrate model for the first substrate and the initial substrate feedback of the second substrate and the second substrate model for the second substrate.

20. The semiconductor processing system of claim 19, wherein the heater power or heater temperature and / or heat exchanger / cooler temperature correction of the first plurality of heating zones is different from the correction of the second plurality of heating zones.

Images