Mask plate and preparation method thereof

Abstract

The invention relates to a mask plate and a preparation method thereof, the mask plate comprises a substrate and islands, a first pixel opening and a second pixel opening are formed in the substrate, the islands are arranged on one side of the substrate in the thickness direction, and the islands comprise the first islands and the second islands; the orthographic projection of the first island on the plane perpendicular to the thickness direction is located between the orthographic projections of the two adjacent first pixel openings on the plane perpendicular to the thickness direction; the orthographic projection of the second island on the plane perpendicular to the thickness direction is located between the orthographic projections of the two adjacent second pixel openings on the plane perpendicular to the thickness direction; wherein the center distance between every two adjacent first pixel openings is larger than the center distance between every two adjacent second pixel openings, and the distance between the side walls, facing the sides of the two adjacent first pixel openings, of the first islands is equal to the distance between the side walls, facing the sides of the two adjacent second pixel openings, of the second islands. Therefore, the structural uniformity of the formed mask plate can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a mask plate and a preparation method thereof. BACKGROUND

[0002] With the rapid development of OLED display technology, there is an increasing demand for display panels with high resolution and high pixel density. In the OLED manufacturing process, the evaporation process is a key link for forming light-emitting units, and the precision and structural stability of the mask plate directly affect the quality of the evaporation pattern and the performance of the display panel. Traditional mask plates usually use a metal sheet with multiple pixel openings, but in high-resolution designs, the difference in pixel opening pitch can cause uneven stress distribution in the mask plate, especially in areas with different pixel densities, which can easily cause structural deformation or fracture risk. SUMMARY

[0003] Embodiments of the present application provide a mask plate and a preparation method thereof, which improve the structural strength uniformity of the mask plate.

[0004] The first aspect of the present application provides a mask plate, comprising: a substrate and an island, the substrate is provided with a first pixel opening and a second pixel opening, the island is arranged on one side in the thickness direction of the substrate, the island comprises a first island and a second island, the orthographic projection of the first island on a plane perpendicular to the thickness direction is located between the orthographic projections of two adjacent first pixel openings on the plane perpendicular to the thickness direction, and the orthographic projection of the second island on the plane perpendicular to the thickness direction is located between the orthographic projections of two adjacent second pixel openings on the plane perpendicular to the thickness direction; wherein the center distance between the two adjacent first pixel openings is greater than the center distance between the two adjacent second pixel openings, the distance between the side walls of the first island towards the two adjacent first pixel openings is a first distance, the distance between the side walls of the second island towards the two adjacent second pixel openings is a second distance, and the first distance is equal to the second distance.

[0005] The second aspect of the present application provides a preparation method of a mask plate, comprising:

[0006] A first protective layer is arranged on one side in the thickness direction of the substrate;

[0007] Two first openings and two second openings are arranged on the first protective layer, the center distance between the two first openings is greater than the center distance between the two second openings;

[0008] A first groove is formed by etching the part of the substrate exposed by the first opening, and a second groove is formed by etching the part of the substrate exposed by the second opening;

[0009] A second protective layer is arranged on the other side in the thickness direction of the substrate;

[0010] two third openings and two fourth openings are formed on the second protective layer, the third openings are oppositely arranged with the first openings in the thickness direction, the fourth openings are oppositely arranged with the second openings in the thickness direction, the center distance between the two adjacent third openings is greater than the center distance between the two adjacent fourth openings, and the minimum distance between the two adjacent third openings is equal to the minimum distance between the two adjacent fourth openings;

[0011] The third grooves are formed by etching the part of the substrate exposed by the third openings, and the fourth grooves are formed by etching the part of the substrate exposed by the fourth openings, the first grooves and the third grooves are connected to form the first pixel openings, and the second grooves and the fourth grooves are connected to form the second pixel openings, wherein the first island is formed between the two adjacent third grooves, the second island is formed between the two adjacent fourth grooves, the distance between the side walls on one side of the two adjacent first pixel openings toward the first island is the first distance, the distance between the side walls on one side of the two adjacent second pixel openings toward the second island is the second distance, and the first distance is equal to the second distance.

[0012] In the embodiments of the present application, in the step of forming two first openings and two second openings on the first protective layer, the step comprises:

[0013] The first opening comprises a first middle region, a first convex portion region and a second convex portion region, the first convex portion region is connected to the first middle region on the side toward the first island, the second convex portion region is connected to the first middle region and is arranged adjacent to the first convex portion region, and the first protective layer comprises a first side wall on the side toward the first convex portion region and a second side wall on the side toward the second convex portion region;

[0014] In the step of etching the part of the substrate exposed by the third openings to form the third grooves and etching the part of the substrate exposed by the fourth openings to form the fourth grooves, the step comprises:

[0015] The third grooves are formed by wet etching the part of the substrate exposed by the third openings, and the first grooves are etched again, so that the third distance between the first side wall and the side wall of the first grooves and the fourth distance between the second side wall and the side wall of the first grooves are formed, and the third distance is greater than the fourth distance.

[0016] In the embodiments of the present application, in the step of forming two first openings and two second openings on the first protective layer, the step comprises:

[0017] Four first openings are formed on the first protective layer, two of the four first openings are oppositely arranged in a first direction, the other two of the four first openings are oppositely arranged in a second direction, and the four first openings are located on the same side of the first island; the first direction, the second direction and the thickness direction are two by two intersected;

[0018] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0019] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0020] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0021] The second opening comprises a second middle area, a third convex area and a fourth convex area, the third convex area is connected to the second middle area and faces the second island, the fourth convex area is connected to the second middle area and is adjacent to the third convex area, the first protective layer comprises a third side wall facing the third convex area and a fourth side wall facing the fourth convex area;

[0022] In the step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove, the step comprises:

[0023] In the step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove, the step comprises:

[0024] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0025] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0026] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0027] In the step of opening two third openings and two fourth openings on the second protective layer, the step comprises:

[0028] The third opening includes a third middle area and a fifth convex area, the fifth convex area is communicated with the third middle area towards the first island side, the fourth opening includes a fourth middle area and a sixth convex area, the sixth convex area is communicated with the fourth middle area towards the second island side, the fifth convex area between two adjacent third openings has a fifth interval, the sixth convex area between two adjacent fourth openings has a sixth interval, and the fifth interval is equal to the sixth interval.

[0029] The second aspect embodiment of the present application further provides a preparation method of a mask plate, comprising:

[0030] A first protective layer is arranged on one side in the thickness direction of the substrate, two first openings and two second openings are arranged on the first protective layer, and the center distance of the two adjacent first openings is greater than the center distance of the two adjacent second openings.

[0031] The first groove is formed by etching the part of the substrate exposed by the first opening, and the second groove is formed by etching the part of the substrate exposed by the second opening.

[0032] A second protective layer is arranged on the other side in the thickness direction of the substrate, two third openings and two fourth openings are arranged on the second protective layer, the third openings are arranged opposite to the first openings in the thickness direction, the fourth openings are arranged opposite to the second openings in the thickness direction, the center distance of the two adjacent third openings is greater than the center distance of the two adjacent fourth openings, and the minimum interval between the two adjacent third openings is equal to the minimum interval between the two adjacent fourth openings.

[0033] The third groove is formed by etching the part of the substrate exposed by the third opening, and the fourth groove is formed by etching the part of the substrate exposed by the fourth opening, the first groove and the third groove are communicated to form the first pixel opening, and the second groove and the fourth groove are communicated to form the second pixel opening, wherein the first island is formed between the two adjacent third grooves, and the second island is formed between the two adjacent fourth grooves.

[0034] The first protective layer and the second protective layer are removed.

[0035] A third protective layer is arranged on both sides in the thickness direction of the substrate, and a plurality of fifth openings are arranged on the third protective layer on the other side in the thickness direction of the substrate, the fifth openings expose the first island and the second island.

[0036] The first island and the second island are etched and removed.

[0037] In the embodiments of the present application, in the step of arranging the third protective layer on both sides in the thickness direction of the substrate, the step further comprises:

[0038] The material of the third protective layer is filled in the first pixel opening and the second pixel opening.

[0039] According to the embodiments of the present application, after the step of etching to remove the first island and the second island, further comprising:

[0040] Removing the third protective layer.

[0041] In the embodiments of the present application, the distance between the sidewalls of the first island towards the two adjacent first pixel openings is a first distance, the distance between the sidewalls of the second island towards the two second pixel openings is a second distance, and the first distance is equal to the second distance, thereby facilitating to improve the uniformity of the mask plate structure strength, to improve the risk of deformation or fracture caused by the local strength unevenness of the mask plate, and to significantly improve the mechanical durability and process repeatability of the mask plate. BRIEF DESCRIPTION OF DRAWINGS

[0042] The features, advantages, and technical effects of the exemplary embodiments of the present application will be described below with reference to the accompanying drawings.

[0043] Figure 1 is a structural schematic diagram of a mask plate according to an embodiment of the present application;

[0044] Figure 2 is a structural schematic diagram of another mask plate according to an embodiment of the present application;

[0045] Figure 3 is a structural schematic diagram of still another mask plate according to an embodiment of the present application;

[0046] Figure 4 is a flowchart of a mask plate manufacturing method according to an embodiment of the present application;

[0047] Figures 5 to 15 is a schematic diagram of a mask plate manufacturing process according to an embodiment of the present application;

[0048] Figure 16 is a flowchart of another mask plate manufacturing method according to an embodiment of the present application;

[0049] Figures 17 to 20 is a schematic diagram of another mask plate manufacturing process according to an embodiment of the present application.

[0050] Reference signs:

[0051] 100, substrate; 110, first pixel opening; 111, first groove; 112, third groove; 120, second pixel opening; 121, second groove; 122, fourth groove; 210, first island; 220, second island; 300, first protective layer; 301, first sidewall; 302, second sidewall; 303, third sidewall; 304, fourth sidewall; 310, first opening; 311, first intermediate region; 312, first protruding region; 313, second protruding region; 320, second opening; 321, second intermediate region; 322, third protruding region; 323, fourth protruding region; 400, second protective layer; 410, third opening; 411, third intermediate region; 412, fifth protruding region; 420, fourth opening; 421, fourth intermediate region; 422, sixth protruding region; 500, third protective layer; 510, fifth opening; X, first direction; Y, second direction; Z, thickness direction.

[0052] In the drawings, the same components have the same reference numerals, and identical components are designated with identical reference numerals. The drawings are not drawn to scale. DETAILED DESCRIPTION

[0053] Features and exemplary embodiments of various aspects of the present application will be described below in detail. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one of ordinary skill in the art that the present application can be practiced without some or all of these specific details. The description of the embodiments is merely illustrative of the present application and is not intended to limit the present application, as is apparent to one of ordinary skill in the art. In the drawings and description below, well-known structures and techniques have not been shown or described in detail in order not to obscure the application. Also, in the following description and in the claims, the terms "including" and "comprising" and the like are used in the sense of "including and / or comprising," and are intended to be open-ended terms not limiting the number of components, so that additional components can also be included. Additionally, the term "plurality" is intended to mean "one or more," unless expressly specified otherwise by context.

[0054] The orientation terms appearing in the following description are the directions shown in the drawings, and are not intended to limit the preparation method of the mask plate of the present application and the specific structure of the mask plate. In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting" should be understood broadly, for example, can be fixedly connected, or can be detachably connected, or integrally connected; can be directly connected, or indirectly connected. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0055] As Figures 1 to 3As shown, the first aspect of the present application proposes a mask plate, comprising: a substrate 100 and an island, the substrate 100 is provided with a first pixel opening 110 and a second pixel opening 120, the island is arranged on one side of the thickness direction Z of the substrate 100, the island comprises a first island 210 and a second island 220, the orthographic projection of the first island 210 on the plane perpendicular to the thickness direction Z is located between the orthographic projections of two adjacent first pixel openings 110 on the plane perpendicular to the thickness direction Z, and the orthographic projection of the second island 220 on the plane perpendicular to the thickness direction Z is located between the orthographic projections of two adjacent second pixel openings 120 on the plane perpendicular to the thickness direction Z; wherein the center distance between the two adjacent first pixel openings 110 is greater than the center distance between the two adjacent second pixel openings 120, the distance between the side walls of the first island 210 towards the two adjacent first pixel openings 110 is a first distance A, the distance between the side walls of the second island 220 towards the two adjacent second pixel openings 120 is a second distance a, and the first distance A is equal to the second distance a.

[0056] In the present embodiment, the OLED panel mainly adopts evaporation to form a light emitting unit, the mask plate is used to realize masking when evaporating the light emitting unit, the light emitting material is evaporated to the array substrate 100 through the first pixel opening 110 and the second pixel opening 120, and the island is arranged on one side of the thickness direction Z of the substrate 100 to enhance the structural strength of the substrate 100.

[0057] The island comprises the first island 210 and the second island 220, the orthographic projection of the first island 210 on the plane perpendicular to the thickness direction Z is located between the orthographic projections of two adjacent first pixel openings 110 on the plane perpendicular to the thickness direction Z, the first island 210 is located between the two adjacent first pixel openings 110, the first island 210 can increase the structural strength of the part of the substrate 100 between the two adjacent first pixel openings 110, the orthographic projection of the second island 220 on the plane perpendicular to the thickness direction Z is located between the orthographic projections of two adjacent second pixel openings 120 on the plane perpendicular to the thickness direction Z, the second island 220 is located between the two adjacent second pixel openings 120, and the second island 220 can increase the structural strength of the part of the substrate 100 between the two adjacent second pixel openings 120.

[0058] The first light emitting unit can be formed on the array substrate 100 by evaporating the light emitting material through the first pixel opening 110, and the second light emitting unit can be formed on the array substrate 100 by evaporating the light emitting material through the second pixel opening 120. The center distance between two adjacent first pixel openings 110 is greater than the center distance between two adjacent second pixel openings 120, so that the center distance between two adjacent first light emitting units on the array substrate 100 is greater than the center distance between two adjacent second light emitting units, thereby being capable of being used for manufacturing display panels with different pixel layouts.

[0059] The distance between the side walls on one side of the two adjacent first pixel openings 110 towards the first island 210 is the first distance A, and the distance between the two side walls of the two first pixel openings 110 towards the first island 210 is the first distance A. The distance between the side walls on one side of the two adjacent second pixel openings 120 towards the second island 220 is the second distance a, and the distance between the two side walls of the two second pixel openings 120 towards the second island 220 is the second distance a. The first distance A is equal to the second distance a, thereby facilitating to improve the uniformity of the mask plate structure strength, to improve the deformation or fracture risk caused by the local strength unevenness of the mask plate, and to significantly improve the mechanical durability and process repeatability of the mask plate.

[0060] The second aspect embodiment of the present application provides a preparation method of a mask plate, as shown in Figure 4 The preparation method comprises the following steps:

[0061] Step S01: as shown in Figure 5 A first protective layer 300 is arranged on one side of the substrate 100 in the thickness direction Z.

[0062] Step S02: as shown in Figure 5 Two first openings 310 and two second openings 320 are arranged adjacent to each other on the first protective layer 300. The center distance between the two adjacent first openings 310 is greater than the center distance between the two adjacent second openings 320.

[0063] Step S03: as shown in Figure 6 The first groove 111 is formed by etching the part of the substrate 100 exposed by the first opening 310, and the second groove 121 is formed by etching the part of the substrate 100 exposed by the second opening 320.

[0064] Step S04: as shown in Figure 7 A second protective layer 400 is arranged on the other side of the substrate 100 in the thickness direction Z.

[0065] Step S05: as shown in Figure 8As shown, two adjacent third openings 410 and two adjacent fourth openings 420 are provided on the second protective layer 400. The third openings 410 and the first opening 310 are arranged opposite each other along the thickness direction Z, and the fourth openings 420 and the second opening 320 are arranged opposite each other along the thickness direction Z. The center distance between two adjacent third openings 410 is greater than the center distance between two adjacent fourth openings 420, and the minimum distance between two adjacent third openings 410 is equal to the minimum distance between two adjacent fourth openings 420.

[0066] Step S06: As Figure 9 As shown, the portion of the substrate 100 exposed through the third opening 410 is etched to form a third groove 112, and the portion of the substrate 100 exposed through the fourth opening 420 is etched to form a fourth groove 122. The first groove 111 and the third groove 112 are connected to form a first pixel opening 110, and the second groove 121 and the fourth groove 122 are connected to form a second pixel opening 120. A first island 210 is formed between two adjacent third grooves 112, and a second island 220 is formed between two adjacent fourth grooves 122. The distance between the sidewalls of the first island 210 facing the two adjacent first pixel openings 110 is a first distance A, and the distance between the sidewalls of the second island 220 facing the two adjacent second pixel openings 120 is a second distance a. The first distance A is equal to the second distance a.

[0067] In the embodiment, the first protective layer 300 is formed on one side of the substrate 100, two first openings 310 and two second openings 320 are formed in the first protective layer 300, the center distance of the two first openings 310 is greater than the center distance of the two second openings 320, the first grooves 111 are formed by etching the part of the substrate 100 exposed by the first openings 310, and the second grooves 121 are formed by etching the part of the substrate 100 exposed by the second openings 320, so that the center distance of the two first grooves 111 is greater than the center distance of the two second grooves 121. The second protective layer 400 is arranged on the other side of the substrate 100 in the thickness direction Z, two third openings 410 and two fourth openings 420 are formed in the second protective layer 400, the third openings 410 are arranged opposite to the first openings 310 in the thickness direction Z, the fourth openings 420 are arranged opposite to the second openings 320 in the thickness direction Z, the center distance of the two third openings 410 is greater than the center distance of the two fourth openings 420, the third grooves 112 are formed by etching the part of the substrate 100 exposed by the third openings 410, and the fourth grooves 122 are formed by etching the part of the substrate 100 exposed by the fourth openings 420, the first grooves 111 and the third grooves 112 are connected to form the first pixel opening 110, and the second grooves 121 and the fourth grooves 122 are connected to form the second pixel opening 120. The first island 210 is not etched between the two third grooves 112, and the second island 220 is not etched between the two fourth grooves 122. Since the minimum distance between the two third openings 410 is equal to the minimum distance between the two fourth openings 420, the distance between the side walls on the side of the first island 210 towards the two first pixel openings 110 is the first distance A, the distance between the side walls on the side of the second island 220 towards the two second pixel openings 120 is the second distance a, and the first distance A is equal to the second distance a, thereby improving the uniformity of the mask plate structure strength, reducing the risk of deformation or fracture caused by local strength unevenness of the mask plate, and significantly improving the mechanical durability and process repeatability of the mask plate.

[0068] As Figure 10 shown, in some optional embodiments, in step S02, the following steps are included:

[0069] The first opening 310 includes a first intermediate region 311, a first convex region 312 and a second convex region 313, the first convex region 312 is connected to the first intermediate region 311 on the side of the first island 210, and the second convex region 313 is connected to the first intermediate region 311 and arranged adjacent to the first convex region 312, and the first protective layer 300 includes a first side wall 301 on the side of the first convex region 312 and a second side wall 302 on the side of the second convex region 313.

[0070] AsFigure 9 and Figure 10 As shown in FIG. 6, in step S06, the following steps are included:

[0071] The third recess 112 is formed by wet etching the part of the substrate 100 exposed by the third opening 410, and the first recess 111 is etched again so that the third distance B between the first sidewall 301 and the sidewall of the first recess 111 and the fourth distance b between the second sidewall 302 and the sidewall of the first recess 111 are formed, and the third distance B is greater than the fourth distance b.

[0072] In these optional embodiments, each of the two adjacent first openings 310 includes a first intermediate region 311, a first protruding region 312 and a second protruding region 313, the first protruding region 312 is connected to the side of the first intermediate region 311 facing the other adjacent first opening 310, that is, the first protruding region 312 is located on the side of the first intermediate region 311 facing the first island 210, the second protruding region 313 is adjacent to the first protruding region 312, and the second protruding region 313 is not on the side of the first intermediate region 311 facing the first island 210, the first intermediate region 311, the first protruding region 312 and the second protruding region 313 are used to accommodate the etching liquid, and the etching liquid etches the substrate 100 to form the first recess 111, the first protective layer 300 includes the first sidewall 301 and the second sidewall 302, the first sidewall 301 encloses the first protruding region 312, and the second sidewall 302 encloses the second protruding region 313. In the process of forming the third recess 112 by wet etching the part of the substrate 100 exposed by the third opening 410, the etching liquid enters the first recess 111 and etches the sidewall of the substrate 100 around the first recess 111 again to form the final size of the first recess 111.

[0073] Since the center distance between the two adjacent third openings 410 is greater than the center distance between the two adjacent fourth openings 420, the minimum distance between the two adjacent third openings 410 is equal to the minimum distance between the two adjacent fourth openings 420, that is, the two adjacent third openings 410 are extended in the direction facing the first island 210, so that the etching amount of the etching liquid for the second etching of the first recess 111 in the direction facing the first island 210 is greater than that in other directions. Based on this, the extension length of the first protruding region 312 in the direction facing the first island 210 is reduced so that the final size of the first recess 111 is equal to the designed size. That is, the third distance between the first sidewall 301 and the sidewall of the first recess 111 is greater than the fourth distance between the second sidewall 302 and the sidewall of the first recess 111, and the extension size of the first protruding region 312 in the direction facing the first island 210 is reduced.

[0074] By increasing the size of the third opening 410 towards the first island 210 direction, and reducing the size of the first opening 310 towards the first island 210 direction, the etching amount towards the first island 210 direction can be improved, and the size of the first groove 111 can be ensured to be the same as the design size, thereby ensuring the precision of the mask plate while improving the structural strength uniformity of the mask plate.

[0075] As shown in Figure 11 In some optional embodiments, in step S02, further comprising: opening four first openings 310 arranged two by two on the first protective layer 300, two of the four first openings 310 are arranged opposite to each other along the first direction X, and the other two of the four first openings 310 are arranged adjacent to each other along the second direction Y, and the four first openings 310 are located on the same first island 210 side.

[0076] As shown in Figure 12 In step S05, four third openings 410 arranged two by two are opened on the second protective layer 400, two of the four third openings 410 are arranged opposite to each other along the first direction X, and the other two of the four third openings 410 are arranged adjacent to each other along the second direction Y, and the four third openings 410 are located on the same first island 210 side.

[0077] In these optional embodiments, the four first openings 310 are arranged on the first island 210 side, the four third openings 410 are arranged on the first island 210 side, and the etching liquid is arranged in the four third openings 410 and etches the substrate 100 to etch from the first direction X and the second direction Y towards the first island 210 direction, thereby improving the uniformity of the size of the first island 210 along the first direction X and the second direction Y, and improving the etching rate of the etching liquid on the first island 210, so that the size of the first island 210 is closer to or equal to the second island 220, thereby improving the structural strength uniformity of the substrate 100.

[0078] Optionally, the first direction X and the second direction Y intersect, and the first direction X and the second direction Y are both perpendicular to the thickness direction Z.

[0079] Optionally, the first direction X, the second direction Y, and the thickness direction Z are perpendicular to each other.

[0080] As shown in Figure 13 In some optional embodiments, in step S02, further comprising:

[0081] The second opening 320 comprises a second intermediate region 321, a third protruding region 322 and a fourth protruding region 323, the third protruding region 322 is connected to the second intermediate region 321 and faces the second island 220, the fourth protruding region 323 is connected to the second intermediate region 321 and is adjacent to the third protruding region 322, the first protective layer 300 comprises a third side wall 303 facing the third protruding region 322 and a fourth side wall 304 facing the fourth protruding region 323.

[0082] In step S06, the method further comprises: etching the part of the substrate 100 exposed by the third opening 410 to form the third groove 112, and etching the part of the substrate 100 exposed by the fourth opening 420 to form the fourth groove 122.

[0083] The part of the substrate 100 exposed by the fourth opening 420 is etched by wet etching to form the fourth groove 122, and the second groove 121 is etched again so that the distance between the third side wall 303 and the sidewall of the second groove 121 is equal to the distance between the fourth side wall 304 and the sidewall of the second groove 121.

[0084] In these optional embodiments, each of the two adjacent second openings 320 comprises a second intermediate region 321, a third protruding region 322 and a fourth protruding region 323, the third protruding region 322 is connected to the second intermediate region 321 and faces the other adjacent second opening 320, that is, the third protruding region 322 is located on the side of the second intermediate region 321 facing the second island 220, the third protruding region 322 is adjacent to the fourth protruding region 323, and the fourth protruding region 323 is not on the side of the second intermediate region 321 facing the second island 220, the second intermediate region 321, the third protruding region 322 and the fourth protruding region 323 are used to accommodate etching liquid, the etching liquid etches the substrate 100 to form the second groove 121, the first protective layer 300 comprises a third side wall 303 and a fourth side wall 304, the third side wall 303 encloses the third protruding region 322, and the fourth side wall 304 encloses the fourth protruding region 323. The part of the substrate 100 exposed by the fourth opening 420 is etched by wet etching to form the fourth groove 122, the etching liquid enters the second groove 121 and etches the sidewall of the substrate 100 around the second groove 121 again to form the final size of the second groove 121. The etching degree of the second groove 121 in the extension direction towards the third protruding region 322 and in the extension direction towards the fourth protruding region 323 is the same, so that the distance between the third side wall 303 and the sidewall of the second groove 121 is equal to the distance between the fourth side wall 304 and the sidewall of the second groove 121.

[0085] As Figure 14As shown in some optional embodiments, in step S02, further comprising: opening four second openings 320 arranged two by two on the first protective layer 300, two of the four second openings 320 are arranged opposite to each other along the first direction X, the other two of the four second openings 320 are arranged adjacent to each other along the second direction Y, and the four second openings 320 are located on the same side of the second island 220.

[0086] As shown in some optional embodiments, in step S05, further comprising: opening four fourth openings 420 arranged two by two on the second protective layer 400, two of the four fourth openings 420 are arranged opposite to each other along the first direction X, the other two of the four fourth openings 420 are arranged adjacent to each other along the second direction Y, and the four fourth openings 420 are located on the same side of the second island 220. Figure 15

[0087] In these optional embodiments, the four second openings 320 are arranged on the side of the second island 220, and the four fourth openings 420 are arranged on the side of the second island 220. The etching liquid is arranged in the four fourth openings 420 and etches the substrate 100 to etch from the first direction X and the second direction Y towards the second island 220, thereby improving the uniformity of the size of the second island 220 along the first direction X and the second direction Y, and improving the etching rate of the etching liquid on the second island 220.

[0088] As shown in some optional embodiments, in step S05, further comprising: the third opening 410 comprises a third intermediate region 411 and a fifth convex region 412, the fifth convex region 412 is connected to the third intermediate region 411 towards the side of the first island 210, the fourth opening 420 comprises a fourth intermediate region 421 and a sixth convex region 422, the sixth convex region 422 is connected to the fourth intermediate region 421 towards the side of the second island 220, the fifth convex region 412 of the two adjacent third openings 410 has a fifth spacing D, the sixth convex region 422 of the two adjacent fourth openings 420 has a sixth spacing d, and the fifth spacing D is equal to the sixth spacing d. Figure 12 Figure 15 As shown in some optional embodiments, in step S05, further comprising: the third opening 410 comprises a third intermediate region 411 and a fifth convex region 412, the fifth convex region 412 is connected to the third intermediate region 411 towards the side of the first island 210, the fourth opening 420 comprises a fourth intermediate region 421 and a sixth convex region 422, the sixth convex region 422 is connected to the fourth intermediate region 421 towards the side of the second island 220, the fifth convex region 412 of the two adjacent third openings 410 has a fifth spacing D, the sixth convex region 422 of the two adjacent fourth openings 420 has a sixth spacing d, and the fifth spacing D is equal to the sixth spacing d.

[0089] ​​In the optional embodiments, the center distance between two adjacent third openings 410 is greater than the center distance between two adjacent fourth openings 420, the center distance between two adjacent third intermediate regions 411 is greater than the center distance between two adjacent fourth intermediate regions 421, and the minimum distance between two adjacent third openings 410 is equal to the minimum distance between two adjacent fourth openings 420, that is, the two adjacent third openings 410 are extended towards the first island 210, thereby increasing the etching amount of the etching liquid towards the first island 210. The fifth protruding region 412 is connected to the side of the third intermediate region 411 towards the first island 210, the sixth protruding region 422 is connected to the side of the fourth intermediate region 421 towards the second island 220, the fifth protruding region 412 between two adjacent third openings 410 has a fifth distance, the sixth protruding region 422 between two adjacent fourth openings 420 has a sixth distance, and the fifth distance is equal to the sixth distance, so that the etching amount of the etching liquid in the third opening 410 to the first island 210 is equal to the etching amount of the etching liquid in the fourth opening 420 to the second island 220, and the distance between the side walls of the first island 210 towards the two adjacent first pixel openings 110 is equal to the distance between the side walls of the second island 220 towards the two adjacent second pixel openings 120.

[0090] The second aspect embodiment of the present application further provides a preparation method of a mask plate, as shown in the following Figure 16 The preparation method comprises the following steps:

[0091] Step S10: as shown in the following Figure 5 , a first protective layer 300 is arranged on one side in the thickness direction Z of a substrate 100, two first openings 310 and two second openings 320 are arranged adjacent to each other on the first protective layer 300, and the center distance between the two adjacent first openings 310 is greater than the center distance between the two adjacent second openings 320.

[0092] Step S20: as shown in the following Figure 6 , a first recess 111 is formed by etching the part of the substrate 100 exposed by the first opening 310, and a second recess 121 is formed by etching the part of the substrate 100 exposed by the second opening 320.

[0093] Step S30: as shown in the following Figure 8As shown, a second protective layer 400 is arranged on the other side of the substrate 100 in the thickness direction Z, two third openings 410 and two fourth openings 420 are arranged on the second protective layer 400, the third openings 410 are arranged opposite to the first openings 310 in the thickness direction Z, the fourth openings 420 are arranged opposite to the second openings 320 in the thickness direction Z, the center distance of the two adjacent third openings 410 is greater than the center distance of the two adjacent fourth openings 420, and the minimum distance between the two adjacent third openings 410 is equal to the minimum distance between the two adjacent fourth openings 420.

[0094] Step S40: as shown in Figure 9 The third groove 112 is formed by etching the part of the substrate 100 exposed by the third opening 410, and the fourth groove 122 is formed by etching the part of the substrate 100 exposed by the fourth opening 420. The first groove 111 and the third groove 112 are connected to form the first pixel opening 110, and the second groove 121 and the fourth groove 122 are connected to form the second pixel opening 120. The first island 210 is formed between the two adjacent third grooves 112, and the second island 220 is formed between the two adjacent fourth grooves 122.

[0095] Step S50: as shown in Figure 17 The first protective layer 300 and the second protective layer 400 are removed.

[0096] Step S60: as shown in Figure 18 The third protective layer 500 is arranged on both sides of the substrate 100 in the thickness direction Z, and a plurality of fifth openings 510 are arranged on the third protective layer 500 on the other side of the substrate 100 in the thickness direction Z. The fifth openings 510 expose the first island 210 and the second island 220.

[0097] Step S70: as shown in Figure 19 The first island 210 and the second island 220 are etched and removed.

[0098] In the embodiment, the first protective layer 300 is formed on one side of the substrate 100, two first openings 310 and two second openings 320 are formed in the first protective layer 300, the distance between the centers of the two first openings 310 is greater than the distance between the centers of the two second openings 320, the first grooves 111 are formed by etching the part of the substrate 100 exposed by the first openings 310, and the second grooves 121 are formed by etching the part of the substrate 100 exposed by the second openings 320, so that the distance between the centers of the two first grooves 111 is greater than the distance between the centers of the two second grooves 121. The second protective layer 400 is arranged on the other side of the substrate 100 in the thickness direction Z, two third openings 410 and two fourth openings 420 are formed in the second protective layer 400, the third openings 410 are arranged opposite to the first openings 310 in the thickness direction Z, the fourth openings 420 are arranged opposite to the second openings 320 in the thickness direction Z, the distance between the centers of the two third openings 410 is greater than the distance between the centers of the two fourth openings 420, the third grooves 112 are formed by etching the part of the substrate 100 exposed by the third openings 410, and the fourth grooves 122 are formed by etching the part of the substrate 100 exposed by the fourth openings 420, the first pixel opening 110 is formed by connecting the first grooves 111 and the third grooves 112, and the second pixel opening 120 is formed by connecting the second grooves 121 and the fourth grooves 122. The first island 210 is formed between the two third grooves 112 which are not etched, the second island 220 is formed between the two fourth grooves 122 which are not etched, the sizes of the first island 210 and the second island 220 are different, so that the structural strength of the substrate 100 is uneven, the third protective layer 500 is arranged on both sides of the substrate 100 in the thickness direction Z, a plurality of fifth openings 510 are formed in the third protective layer 500 on the other side of the substrate 100 in the thickness direction Z, the fifth openings 510 expose the first island 210 and the second island 220, and the islands are removed by etching through the fifth openings 510, so as to reduce the problem of structural stress concentration of the substrate 100 caused by the different sizes of the islands.

[0099] As shown in some optional embodiments, in step S60, further comprising: filling the material of the third protective layer 500 in the first pixel opening 110 and the second pixel opening 120. Figure 18 In these optional embodiments, the protective part is used to reduce the etching damage of the etching liquid to the first pixel opening 110 and the second pixel opening 120 when etching the island, and to reduce the size accuracy of the pixel opening.

[0100] As shown in some optional embodiments, after step S70, further comprising:

[0101] Figure 20 As shown in some optional embodiments, after step S70, further comprising:

[0102] ​Step S80: removing the third protective layer 500.

[0103] In these optional embodiments, removing the third protective layer 500 forms a mask plate without an island, thereby improving the reliability of the mask plate.

[0104] Although the present application has been described with reference to the preferred embodiments, various modifications can be made to the application without departing from the scope of the application. In particular, the technical features mentioned in each of the embodiments can be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A mask plate, characterized by, The method comprises the following steps: a substrate, a first pixel opening and a second pixel opening are formed on the substrate, an island is arranged on one side of the thickness direction of the substrate, the island comprises a first island and a second island, a projection of the first island on a plane perpendicular to the thickness direction is located between projections of two adjacent first pixel openings on the plane perpendicular to the thickness direction, and a projection of the second island on the plane perpendicular to the thickness direction is located between projections of two adjacent second pixel openings on the plane perpendicular to the thickness direction; wherein a center distance between two adjacent first pixel openings is greater than a center distance between two adjacent second pixel openings, a distance between side walls of the first island towards two adjacent first pixel openings is a first distance, a distance between side walls of the second island towards two adjacent second pixel openings is a second distance, and the first distance is equal to the second distance.

2. A method of manufacturing a mask blank, characterized by, The method comprises the following steps: a first protective layer is arranged on one side of the thickness direction of the substrate; two first openings and two second openings are formed on the first protective layer, the two first openings are arranged adjacently, and the two second openings are arranged adjacently; a first groove is formed by etching a part of the substrate exposed by the first opening, and a second groove is formed by etching a part of the substrate exposed by the second opening; a second protective layer is arranged on the other side of the thickness direction of the substrate; two third openings and two fourth openings are formed on the second protective layer, the third openings are arranged opposite to the first openings along the thickness direction, the fourth openings are arranged opposite to the second openings along the thickness direction, the two third openings are arranged adjacently, the two fourth openings are arranged adjacently, a center distance between the two third openings is greater than a center distance between the two fourth openings, and a minimum distance between the two third openings is equal to a minimum distance between the two fourth openings; a third groove is formed by etching a part of the substrate exposed by the third opening, and a fourth groove is formed by etching a part of the substrate exposed by the fourth opening, the first groove and the third groove are connected to form a first pixel opening, and the second groove and the fourth groove are connected to form a second pixel opening, wherein a first island is formed between two adjacent third grooves, a second island is formed between two adjacent fourth grooves, a distance between side walls of the first island towards two adjacent first pixel openings is a first distance, a distance between side walls of the second island towards two adjacent second pixel openings is a second distance, and the first distance is equal to the second distance.

3. The preparation method according to claim 2, characterized in that, The step of forming the two first openings and the two second openings on the first protective layer comprises the following steps: The first opening includes a first middle region, a first protruding region and a second protruding region, the first protruding region is communicated with the first middle region towards the first island side, the second protruding region is communicated with the first middle region and is arranged adjacent to the first protruding region, the first protective layer includes a first side wall towards the first protruding region side and a second side wall towards the second protruding region side; The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form the third groove and etching the part of the substrate exposed by the fourth opening to form the fourth groove includes:

4. The production method according to claim 3, characterized by, The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes:

5. The preparation method according to claim 3, characterized in that, The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth groove includes: The step of etching the part of the substrate exposed by the third opening to form a third groove and etching the part of the substrate exposed by the fourth opening to form a fourth 6. The production method according to claim 5, wherein The step of opening two first openings and two second openings on the first protective layer comprises: opening four second openings on the first protective layer, two of the four second openings are oppositely arranged along a first direction, the other two of the four second openings are oppositely arranged along a second direction, and the four second openings are located on the same side of the second island; The step of opening two third openings and two fourth openings on the second protective layer comprises:

7. The preparation method according to claim 3, characterized in that, opening four fourth openings on the second protective layer, two of the four fourth openings are oppositely arranged along the first direction, the other two of the four fourth openings are oppositely arranged along the second direction, and the four fourth openings are located on the same side of the second island. The step of opening two third openings and two fourth openings on the second protective layer further comprises:

8. A method of manufacturing a mask blank, characterized by, The third opening comprises a third middle area and a fifth convex area, and the fifth convex area is connected to the third middle area and faces the first island; the fourth opening comprises a fourth middle area and a sixth convex area, and the sixth convex area is connected to the fourth middle area and faces the second island; the fifth convex area of two adjacent third openings has a fifth spacing, and the sixth convex area of two adjacent fourth openings has a sixth spacing, and the fifth spacing is equal to the sixth spacing. The method comprises: arranging a first protective layer on one side of the substrate in the thickness direction of the substrate, opening two first openings and two second openings on the first protective layer, and arranging the two first openings and the two second openings adjacently, wherein the center distance of two adjacent first openings is greater than the center distance of two adjacent second openings; etching the part of the substrate exposed by the first opening to form a first groove, and etching the part of the substrate exposed by the second opening to form a second groove; arranging a second protective layer on the other side of the substrate in the thickness direction of the substrate, opening two third openings and two fourth openings on the second protective layer, and arranging the two third openings and the two fourth openings adjacently, wherein the third opening is oppositely arranged with the first opening in the thickness direction, the fourth opening is oppositely arranged with the second opening in the thickness direction, the center distance of two adjacent third openings is greater than the center distance of two adjacent fourth openings, and the minimum distance between two adjacent third openings is equal to the minimum distance between two adjacent fourth openings; etching the part of the substrate exposed by the third opening to form a third groove, and etching the part of the substrate exposed by the fourth opening to form a fourth groove, wherein the first groove and the third groove are connected to form a first pixel opening, and the second groove and the fourth groove are connected to form a second pixel opening, and the first island is formed between two adjacent third grooves, and the second island is formed between two adjacent fourth grooves; removing the first protective layer and the second protective layer. A third protective layer is arranged on both sides of the substrate in the thickness direction of the substrate, a plurality of fifth openings are arranged on the third protective layer on the other side of the substrate in the thickness direction of the substrate, and the fifth openings expose the first island and the second island; The first island and the second island are removed by etching.

9. The production method according to claim 8, characterized by, The step of arranging the third protective layer on both sides of the substrate in the thickness direction of the substrate further comprises: The material of the third protective layer is filled in the first pixel opening and the second pixel opening.

10. The method of claim 9, wherein, The step of removing the first island and the second island by etching further comprises: The third protective layer is removed.

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