Quantum current measurement method and device based on quantum abnormal Hall effect

Abstract

The invention provides a quantum current measurement method and device based on a quantum abnormal Hall effect, and relates to the technical field of quantum current measurement. The quantum current measurement method comprises the following steps: determining a Hall voltage of a quantum resistance module, wherein a quantum standard resistance of the quantum resistance module is determined based on a quantum abnormal Hall effect; driving a quantum voltage module based on preset microwaves to enable the quantum voltage module to generate quantization voltage; determining a quantum standard voltage according to the quantization voltage and the Hall voltage; determining a quantum standard current according to the quantum standard voltage and the quantum standard resistance; and determining the current to be measured of the target measurement device according to the quantum standard current. The system has the advantages of being simple in structure, high in integration degree and high in anti-interference performance and measurement stability.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quantum current detection, in particular to a quantum current measurement method and device based on quantum anomalous Hall effect. BACKGROUND

[0002] With the reform of the International System of Units (SI), the unit standards of all basic physical quantities no longer rely on artificial physical object benchmarks, but trace back to basic physical constants with fixed values, which have the advantages of extremely high stability, universality and reproducibility.

[0003] Quantum standard current is a current unit based on quantum mechanical effect to accurately generate or define. The current implementation method of quantum standard current is to determine the voltage based on Josephson effect and the resistance based on quantum Hall effect, and combine Ohm's law to determine the current unit.

[0004] However, the implementation of quantum Hall effect needs to rely on a very strong external magnetic field, and such a strong magnetic field will seriously interfere with or even destroy the normal operation of Josephson effect based on superconducting phenomenon, resulting in that the Josephson junction cannot work normally and cannot generate accurate quantized voltage. Therefore, in the prior art, the quantum resistance module based on quantum Hall effect and the quantum voltage module based on Josephson effect cannot be placed in the same environment and work at the same time.

[0005] The content of the background section merely represents the knowledge of the discloser, and does not necessarily represent the state of the art in the field. SUMMARY

[0006] The present application provides a quantum current measurement method and device based on quantum anomalous Hall effect, which is used to solve the technical problem that the quantum resistance module based on quantum Hall effect and the quantum voltage module based on Josephson effect cannot be placed in the same environment and work at the same time due to magnetic field compatibility.

[0007] According to an aspect of the present application, the present application provides a quantum current measurement method based on quantum anomalous Hall effect, comprising: determining a Hall voltage of a quantum resistance module, the quantum standard resistance of the quantum resistance module being determined based on quantum anomalous Hall effect; driving a quantum voltage module based on a preset microwave to make the quantum voltage module generate a quantized voltage; determining a quantum standard voltage according to the quantized voltage and the Hall voltage; determining a quantum standard current according to the quantum standard voltage and the quantum standard resistance; and determining a to-be-measured current of a target measurement device according to the quantum standard current.

[0008] According to some embodiments of the present application, the quantum resistance module comprises a quantum anomalous Hall device, and the quantum anomalous Hall device comprises a quantum anomalous Hall insulator.

[0009] According to some embodiments of the present application, determining the quantum standard voltage according to the quantized voltage and the Hall voltage comprises: adjusting the frequency of the preset microwave until the quantized voltage is equal to the Hall voltage; and determining the quantized voltage corresponding to the frequency of the current preset microwave as the quantum standard voltage value.

[0010] According to some embodiments of the present application, the material of the quantum anomalous Hall insulator comprises at least one or more of chromium-doped bismuth antimony telluride, vanadium-doped bismuth antimony telluride, or manganese bismuth antimony.

[0011] According to some embodiments of the present application, the quantum voltage module comprises a Josephson junction array, and the Josephson junction array is in a superconductor-insulator-superconductor structure.

[0012] According to an aspect of the present application, the present application provides a quantum current measurement device based on quantum anomalous Hall effect, comprising: a quantum voltage module; a quantum resistance module connected with the quantum voltage module, a quantum standard resistance of the quantum resistance module being determined based on quantum anomalous Hall effect, a microwave module driving the quantum voltage module based on a preset microwave so that the quantum voltage module generates a quantized voltage; a homodyne detection module connected with the quantum voltage module at one end to receive the quantized voltage and connected with the quantum resistance module at the other end to receive a Hall voltage of the quantum resistance module, and determining a quantum standard voltage according to the quantized voltage and the Hall voltage, and determining a quantum standard current according to the quantum standard voltage and the quantum standard resistance; and a current comparison module determining a to-be-measured current of a target measurement device according to the quantum standard current.

[0013] According to some embodiments of the present application, the quantum resistance module comprises a quantum anomalous Hall device, and the quantum anomalous Hall device comprises a quantum anomalous Hall insulator.

[0014] According to some embodiments of the present application, the microwave module adjusts the frequency of the preset microwave until the quantized voltage is equal to the Hall voltage, so as to determine the quantized voltage corresponding to the frequency of the current preset microwave as the quantum standard voltage.

[0015] According to some embodiments of the present application, the material of the quantum anomalous Hall insulator comprises at least one or more of chromium-doped bismuth antimony telluride, vanadium-doped bismuth antimony telluride, or manganese bismuth antimony.

[0016] According to some embodiments of the present application, the quantum voltage module comprises a Josephson junction array, and the Josephson junction array is in a superconductor-insulator-superconductor structure.

[0017] Advantages The application can obtain a quantized voltage based on a preset microwave driven quantum voltage module, and can determine a quantum standard voltage according to the quantized voltage and a Hall voltage of a quantum resistance module based on the quantum anomalous Hall effect, to determine a quantum standard current, so that current measurement can be realized according to the quantum standard current.

[0018] The application can realize an accurately quantized Hall resistance under zero magnetic field based on the quantum anomalous Hall effect, without an external magnetic field, thereby solving the contradiction between the quantum voltage module and the quantum resistance module in magnetic field compatibility. In addition, the quantum voltage module and the quantum resistance module can be integrally arranged in the same magnetic shielding device, and the quantum voltage module and the quantum resistance module do not need to be connected by a long distance wire, and the application has the characteristics of simple system structure, high integration, and high anti-interference and measurement stability. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description only some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0020] Figure 1 A flowchart of a quantum current measurement method according to an embodiment of the application is shown; Figure 2 Another schematic diagram of a quantum current measurement method according to an embodiment of the application is shown; Figure 3 A structural schematic diagram of a quantum current measurement device according to an embodiment of the application is shown.

[0021] Explanation of reference signs: Quantum voltage module 10; quantum resistance module 20; microwave module 30; homodyne detection module 40; current comparison module 50; target measurement device 60; low temperature system 70; Quantum anomalous Hall device 21; quantum anomalous Hall insulator 211. DETAILED DESCRIPTION

[0022] Example embodiments now will be described more fully hereinafter with reference to the accompanying drawings. Example embodiments, however, can be implemented in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. Like reference numerals refer to like elements throughout the figures, and thus description of the same will be simplified or omitted.

[0023] The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the

[0024] Moreover, the terms "first", "second", and the like, do not denote any order, quantity, combination, or arrangement, but are used to identify different objects and instances in the specification.

[0025] The terms "first", "second", and the like in the description and claims of the application and in the above description of the drawings are used for distinguishing between similar objects and are not necessarily used to describe a sequence, quantity, or combination. It is understood that the terms "first", "second", and the like can be understood to denote different instances of the same object.

[0026] The technical solutions in the present application will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0027] According to the new International System of Units, the unit of voltage (volt, V) is realized by Josephson effect, whose principle is that a superconducting Josephson junction will produce a quantized voltage : under the excitation of microwave frequency f (where n is an integer, h is Planck's constant, is the Josephson constant, , e is the elementary charge, and n, h, and e are fixed values). Therefore, the definition of the unit of voltage (volt) is equivalent to the Josephson voltage step under a certain frequency f.

[0028] The unit of resistance (ohm, Ω) is realized by the quantum Hall effect, whose principle is that a two-dimensional electron gas will exhibit a quantized Hall resistance , under strong magnetic fields and extremely low temperature environments (where i is an integer, and i is the quantum number of the Hall platform, is the fixed von Klitzing constant, ).

[0029] The current unit (ampere A) can be realized theoretically by the classic Ohm's law based on the above voltage unit and resistance unit. Thus, the technical complexity and the limitation of small current output brought by directly pumping single electron (current I = nef, accurately transferring electrons by control frequency f) and the like can be avoided.

[0030] Due to the fundamental conflict of the magnetic field strength between the quantum resistance module based on the quantum Hall effect and the quantum voltage module based on the Josephson effect, the quantum resistance module based on the quantum Hall effect and the quantum voltage module based on the Josephson effect cannot be simply placed in the same environment (such as the same low temperature, single platform) to work at the same time.

[0031] At present, the quantum resistance module based on the quantum Hall effect and the quantum voltage module based on the Josephson effect are generally placed in two separate low-temperature measuring devices, which are separated in space and subjected to magnetic isolation treatment, and the two measuring modules are connected by low-loss low-noise cables. However, this method at least has the following technical problems: 1. High system complexity: the quantum resistance module and the quantum voltage module need two independent low-temperature and magnetic field control systems, which seriously limits the integration of the quantum current measurement device, resulting in a complex system structure, high power consumption, high cost, and problems of not conducive to the miniaturization and practical application of the device; 2. Poor stability: the quantum resistance module and the quantum voltage module need to be connected by long-distance wires, which increases the interference source and the uncertainty transmission path of the quantum current measurement device, resulting in reduced stability and accuracy of the quantum current measurement.

[0032] According to an aspect of the present application, the present application provides a quantum current measurement method based on quantum anomalous Hall effect, which is used for measuring the current value of a target to be measured based on quantum anomalous Hall effect.

[0033] Exemplarily, the quantum current measurement method can be executed by a quantum current measurement device.

[0034] Figure 1 A flowchart of a quantum current measurement method according to an embodiment of the present application is shown. As shown in Figure 1 The quantum current measurement method can include steps S100-S500.

[0035] According to an example embodiment, in step S100, the quantum current measurement device determines the Hall voltage of the quantum resistance module, and the quantum standard resistance of the quantum resistance module is determined based on the quantum anomalous Hall effect.

[0036] Optionally, the quantum resistance module includes a quantum anomalous Hall device, and the quantum anomalous Hall device includes a quantum anomalous Hall insulator.

[0037] Optionally, the material of the quantum anomalous Hall insulator can be chromium-doped bismuth antimony telluride (Bi, Sb) 2Te3, vanadium-doped bismuth antimony telluride (Bi, Sb) 2Te3, and manganese bismuth antimony MnBi2Te4, etc.

[0038] For example, the quantum anomalous Hall insulator can be grown on a substrate on a large scale based on a molecular beam epitaxy technique, with high quantumization accuracy.

[0039] According to an example embodiment, the quantum Hall effect is that, under a strong magnetic field and an extremely low temperature environment, a Hall voltage is generated, and at the same time, a two-dimensional electron gas exhibits quantization, and the Hall resistance no longer continuously changes with the magnetic field, at this time, the Hall resistance is: Therefore, the Hall resistance is only determined by the basic physical constant, but needs to be obtained under a strong magnetic field and an extremely low temperature environment.

[0040] And the quantum anomalous Hall effect is that some magnetic materials can generate a Hall voltage without an external magnetic field. Without an external magnetic field, due to the combined action of the intrinsic magnetism of the material and the topological energy band structure, the Hall resistance still exhibits an accurate quantum value, and the Hall resistance is still: .

[0041] For example, the quantum current measurement device can be electrically connected to the target measurement device, and the quantum current measurement device includes a low-temperature current comparator. When the current to be measured of the target measurement device flows into the low-temperature current comparator, a reference current is generated. When the reference current flows into the quantum resistance module, the quantum resistance module generates a Hall voltage (also known as a transverse voltage) based on the quantum anomalous Hall effect: .

[0042] According to an example embodiment, in step S200, the quantum current measurement device drives the quantum voltage module based on a preset microwave frequency, so that the quantum voltage module generates a quantized voltage.

[0043] Optionally, the quantum voltage module includes a Josephson junction array, and the Josephson junction array is formed by a plurality of Josephson junctions in series.

[0044] The quantum current measurement device can generate a preset microwave (with a frequency of f) based on a microwave source (locked by an atomic clock), and the Josephson junction array can generate a stable quantized direct current voltage, i.e., a quantized voltage under the driving of the preset microwave.

[0045] Exemplarily, the expression of the quantized voltage can be: ; wherein n is an integer, h is Planck's constant, is a Josephson constant, , e is an elementary charge, and n, h, and e are constants.

[0046] It can be seen that the quantized voltage is only determined by the frequency f of the microwave and the integer n, and the quantized voltage has high precision and high stability.

[0047] Optionally, the Josephson junction can have a sandwich structure of superconductor-insulator-superconductor.

[0048] For example, the superconductor can be made of Al, and the insulator can be made of AlOx. Illustratively, the Josephson junction can be prepared based on a double-angle mask method and an in-situ oxidation method, which are not limited in the present application.

[0049] According to an example embodiment, in step S300, the quantum current measurement device determines the quantum standard voltage value according to the quantized voltage and the Hall voltage.

[0050] For example, the quantum current measurement device can determine the quantum standard voltage value at the quantum resistance module by adjusting the quantized voltage to be equal to the Hall voltage.

[0051] Figure 2 Another schematic diagram of the quantum current measurement method according to an example embodiment of the present application is shown.

[0052] Optionally, as shown in Figure 2 , step S300 can further include S310-S320.

[0053] In step S310, the quantum current measurement device adjusts the frequency of the preset microwave until the quantized voltage is equal to the Hall voltage.

[0054] In step S320, the quantum current measurement device determines the quantized voltage corresponding to the frequency of the current preset microwave as the quantum standard voltage value.

[0055] For example, it can be seen from that when the frequency f of the preset microwave changes, the quantized voltage also changes. The quantum current measurement device adjusts the frequency f of the preset microwave, compares the quantized voltage and the Hall voltage by homodyne, until the quantized voltage is equal to the Hall voltage. At this time, the quantized voltage is the quantum standard voltage of the quantum resistance module.

[0056] According to an example embodiment, in step S400, the quantum current measurement device determines the quantum standard current according to the quantum standard voltage and the quantum standard resistance.

[0057] In step S500, the quantum current measurement device determines the to-be-measured current of the target measurement device according to the quantum standard current.

[0058] For example, in the case where the quantized voltage is equal to the Hall voltage, the quantized voltage is the quantum standard voltage of the quantum resistance module, and in this case, the quantum standard current in the quantum resistance module satisfies: The determination of the quantum standard current only depends on the basic physical quantity generated by the Josephson effect and the quantum anomalous Hall effect (such as depending on the microwave frequency f and the specific arrangement of the Josephson junction array), and is independent of the artificial physical reference, and has the characteristics of high repeatability and universality.

[0059] For example, based on the quantum anomalous Hall effect, the Hall resistance is still: That is, the quantum standard resistance of the quantum resistance module is fixed and known, and the quantum standard current can be determined according to the quantum standard voltage and the quantum standard resistance.

[0060] According to an example embodiment, the quantum current measurement device can also take the quantum standard current as a reference current, and determine the current value of the to-be-measured current of the target measurement device through current comparison.

[0061] Exemplarily, the quantum standard current can generally be in the order of nanoamperes or ten nanoamperes, and based on the quantum standard current, current calibration of different current intensities can be realized, and the current value of the to-be-measured current can be accurately measured in a large range.

[0062] Through the above embodiments, the present application can obtain a quantized voltage based on a preset microwave driven quantum voltage module, and can determine a quantum standard voltage according to the quantized voltage and the Hall voltage of a quantum resistance module based on the quantum anomalous Hall effect, to determine a quantum standard current, so that current measurement can be realized according to the quantum standard current.

[0063] The present application can realize an accurately quantized Hall resistance under zero magnetic field based on the quantum anomalous Hall effect, without the need for an external magnetic field, thereby solving the contradiction between the magnetic field compatibility of the quantum voltage module and the quantum resistance module. In addition, the quantum voltage module and the quantum resistance module can be integrally arranged in the same magnetic shielding device, and there is no need for long-distance wire connection between the quantum voltage module and the quantum resistance module. The present application has the characteristics of simple system structure, high integration, and high anti-interference and measurement stability.

[0064] According to another aspect of the present application, the present application also provides a quantum current measurement device based on the quantum anomalous Hall effect.

[0065] Figure 3 A structure schematic diagram of a quantum current measurement device of an embodiment of the present application is shown.

[0066] According to an example embodiment, as shown in Figure 3 , the quantum current measurement device can include a quantum voltage module 10, a quantum resistance module 20, a microwave module 30, a homodyne detection module 40, and a current comparison module 50.

[0067] As shown in Figure 3 , the quantum voltage module 10, the quantum resistance module 20, and the current comparison module 50 can be disposed in a low-temperature system 70 (such as a dilution refrigerator). The low-temperature system 70 can provide an extremely low-temperature test environment (such as 10 mK) for the quantum current measurement device. As shown in Figure 3 , the microwave module 30, the homodyne detection module 40, and the target measurement device 60 can be placed in a room-temperature environment.

[0068] According to an example embodiment, the quantum resistance module 20 is used to generate a Hall voltage, and the quantum standard resistance of the quantum resistance module is determined based on the quantum anomalous Hall effect.

[0069] Optionally, as shown in Figure 3 , the quantum resistance module 20 includes a quantum anomalous Hall device 21, and the quantum anomalous Hall device 21 includes a quantum anomalous Hall insulator 211.

[0070] Optionally, the quantum anomalous Hall insulator 211 can be made of chromium-doped bismuth antimony telluride (Bi, Sb) 2Te3, vanadium-doped bismuth antimony telluride (Bi, Sb) 2Te3, and manganese bismuth antimony MnBi2Te4, etc.

[0071] For example, the quantum anomalous Hall insulator 211 can be grown on a substrate based on a molecular beam epitaxy technique, and has a high quantumization accuracy.

[0072] According to an example embodiment, the quantum Hall effect is that, under a strong magnetic field and an extremely low-temperature environment, a Hall voltage is generated, and at the same time, a two-dimensional electron gas exhibits quantization, and the Hall resistance no longer continuously changes with the magnetic field, and at this time, the Hall resistance is: Therefore, the Hall resistance is determined only by a basic physical constant, but needs to be obtained under a strong magnetic field and an extremely low-temperature environment.

[0073] And the quantum anomalous Hall effect is that certain magnetic materials can generate a Hall voltage without an external magnetic field. Without an external magnetic field, due to the combined action of the intrinsic magnetism of the material and the topological energy band structure, the Hall resistance still exhibits an accurate quantization value, and the Hall resistance is still: .

[0074] For example, as shown in Figure 3As shown, the quantum current measurement device is electrically connected to the target measurement device 60, and the quantum current measurement device includes a current comparison module 50 (e.g., a low-temperature current comparator). When the current to be measured of the target measurement device 60 flows into the current comparison module 50, a reference current is generated. When the reference current flows into the quantum resistance module 20, the quantum resistance module 20 generates a Hall voltage (also referred to as a transverse voltage) based on the quantum anomalous Hall effect : .

[0075] According to an example embodiment, the microwave module 30 drives the quantum voltage module 10 based on a preset microwave frequency, so that the quantum voltage module 10 generates a quantized voltage.

[0076] Optionally, the quantum voltage module 10 includes a Josephson junction array formed by a plurality of Josephson junctions in series.

[0077] The microwave module 30 can generate a preset microwave (with a frequency of f) based on a microwave source (locked by an atomic clock), and the Josephson junction array can generate a stable quantized direct current voltage, i.e., a quantized voltage, under the driving of the preset microwave. .

[0078] Exemplarily, the expression of the quantized voltage may be: ; wherein n is an integer, h is Planck's constant, is a Josephson constant, , e is an elementary charge, and n, h, and e are constant values.

[0079] Therefore, the value of the quantized voltage only depends on the frequency f of the microwave and the integer n, and the quantized voltage has high precision and high stability.

[0080] Optionally, the Josephson junction can have a sandwich structure of superconductor-insulator-superconductor.

[0081] For example, the material of the superconductor can be Al, and the material of the insulator can be AlO x . Exemplarily, the Josephson junction can be prepared based on a double-angle mask method and an in-situ oxidation method, which are not limited in the present application.

[0082] According to an example embodiment, as Figure 3As shown, the homodyne detection module 40 is connected to the quantum voltage module 10 at one end to receive the quantized voltage and connected to the quantum resistance module 20 at the other end to receive the Hall voltage of the quantum resistance module 20. Thus, the quantum standard voltage is determined according to the quantized voltage and the Hall voltage, and the quantum standard current is determined according to the quantum standard voltage.

[0083] The homodyne detection module 40 determines the quantum standard voltage value according to the quantized voltage and the Hall voltage.

[0084] For example, the microwave module 30 can determine the quantum standard voltage at the quantum resistance module 20 by adjusting the quantized voltage to be equal to the Hall voltage.

[0085] The microwave module 30 adjusts the frequency of the preset microwave in response to a user instruction until the homodyne detection module 40 detects that the quantized voltage is equal to the Hall voltage, so that the quantized voltage corresponding to the frequency of the current preset microwave is determined as the quantum standard voltage.

[0086] For example, according to the formula It can be seen that when the frequency f of the preset microwave changes, the quantized voltage also changes. The microwave module 30 adjusts the frequency f of the preset microwave, and the homodyne detection module 40 compares the quantized voltage and the Hall voltage until the quantized voltage is equal to the Hall voltage. At this time, the quantized voltage is the quantum standard voltage of the quantum resistance module 20.

[0087] According to the example embodiment, after the quantum standard current is determined according to the quantum standard voltage and the quantum standard resistance, the current comparison module 50 determines the current value of the target to be measured according to the quantum standard current.

[0088] For example, in the case where the quantized voltage is equal to the Hall voltage, the quantized voltage is the quantum standard voltage of the quantum resistance module, and at this time, the quantum standard current in the quantum resistance module 20 satisfies: The determination of the quantum standard current only depends on the basic physical quantities generated by the Josephson effect and the quantum anomalous Hall effect (such as depending on the microwave frequency f and the specific arrangement of the Josephson junction array), and is independent of the artificial physical object reference, and has the characteristics of high repeatability and universality.

[0089] For example, based on the quantum anomalous Hall effect, the Hall resistance is still: That is, the quantum standard resistance of the quantum resistance module 20 is fixed and known, and the current comparison module 50 can determine the quantum standard current according to the quantum standard voltage and the quantum standard resistance.

[0090] According to the example embodiment, the current comparison module 50 can also take the quantum standard current as the reference current, and determine the current value of the to-be-measured current of the target measuring device through current comparison.

[0091] Exemplarily, the quantum standard current can generally be microampere or nanoampere level, and based on the quantum standard current, current calibration of different current intensities can be realized, and the current value of the to-be-measured current can be accurately measured in a larger range.

[0092] Through the above embodiments, the present application can obtain a quantized voltage based on the preset microwave-driven quantum voltage module, and can determine a quantum standard voltage according to the quantized voltage and the Hall voltage of the quantum resistance module based on the quantum anomalous Hall effect, so as to determine a quantum standard current, thereby realizing current measurement according to the quantum standard current.

[0093] The present application can realize an accurately quantized Hall resistance under zero magnetic field based on the quantum anomalous Hall effect, without an external magnetic field, thereby solving the contradiction between the quantum voltage module and the quantum resistance module in terms of magnetic field compatibility. In addition, the quantum voltage module and the quantum resistance module can be integrally arranged in the same magnetic shielding device, and the quantum voltage module and the quantum resistance module do not need to be connected by long-distance wires, and the present application has the characteristics of simple system structure, high integration degree, high anti-interference performance and high measurement stability.

[0094] Finally, it should be noted that the above only describes the preferred embodiments of the present application and is not intended to limit the present application. Although the above embodiments of the present application are described in detail, those skilled in the art can still modify the technical solutions of the above embodiments or make equivalent replacements to some technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method of quantum current measurement based on the quantum anomalous Hall effect, characterized in that, The method comprises: determining a Hall voltage of a quantum resistance module, a quantum standard resistance of the quantum resistance module being determined based on quantum anomalous Hall effect; driving the quantum voltage module based on a preset microwave, so that the quantum voltage module generates a quantized voltage; determining a quantum standard voltage based on the quantized voltage and the Hall voltage; determining a quantum standard current based on the quantum standard voltage and the quantum standard resistance; determining a to-be-measured current of a target measuring device based on the quantum standard current.

2. The quantum current measurement method according to claim 1, wherein, The quantum resistance module comprises a quantum anomalous Hall device, and the quantum anomalous Hall device comprises a quantum anomalous Hall insulator.

3. The quantum current measurement method of claim 1, wherein, The method of determining the quantum standard voltage based on the quantized voltage and the Hall voltage comprises: adjusting the frequency of the preset microwave until the quantized voltage is equal to the Hall voltage; and determining the quantized voltage corresponding to the current frequency of the preset microwave as the quantum standard voltage.

4. The quantum current measurement method of claim 2, wherein, The quantum anomalous Hall insulator is made of at least one of chromium-doped bismuth antimony telluride, vanadium-doped bismuth antimony telluride, or manganese bismuth antimony.

5. The quantum current measurement method of claim 1, wherein, The quantum voltage module comprises a Josephson junction array in a superconductor-insulator-superconductor structure.

6. A quantum current measurement device based on the quantum anomalous Hall effect, characterized in that The method comprises: a quantum voltage module; a quantum resistance module connected to the quantum voltage module, a quantum standard resistance of the quantum resistance module being determined based on quantum anomalous Hall effect; a microwave module for driving the quantum voltage module based on a preset microwave, so that the quantum voltage module generates a quantized voltage; a homodyne detection module connected to the quantum voltage module at one end to receive the quantized voltage and connected to the quantum resistance module at the other end to receive a Hall voltage of the quantum resistance module, so as to determine a quantum standard voltage based on the quantized voltage and the Hall voltage, and to determine a quantum standard current based on the quantum standard voltage and the quantum standard resistance; a current comparison module for determining a to-be-measured current of a target measuring device based on the quantum standard current.

7. The quantum current measurement device of claim 6, wherein, The quantum resistance module comprises a quantum anomalous Hall device, and the quantum anomalous Hall device comprises a quantum anomalous Hall insulator.

8. The quantum current measurement device of claim 6, wherein, The microwave module adjusts the frequency of the preset microwave until the quantized voltage is equal to the Hall voltage, and determines the quantized voltage corresponding to the current frequency of the preset microwave as the quantum standard voltage.

9. The quantum current measurement device of claim 7, wherein, The quantum anomalous Hall insulator is made of at least one of chromium-doped bismuth antimony telluride, vanadium-doped bismuth antimony telluride, or manganese bismuth antimony.

10. The quantum current measurement device of claim 6, wherein, The quantum voltage module comprises a Josephson junction array in a superconductor-insulator-superconductor structure.

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