High-isolation waveguide three-path power division and synthesis network structure

Abstract

The invention discloses a high-isolation waveguide three-way power dividing and combining network structure which comprises a waveguide three-way power divider and a waveguide three-way power combiner, and an amplifier is connected between the waveguide three-way power divider and the waveguide three-way power combiner. The waveguide three-way power divider comprises a power divider upper waveguide cavity and a power divider lower waveguide cavity which are symmetrically arranged, and the power divider upper waveguide cavity and the power divider lower waveguide cavity are connected through screws. The waveguide three-path power combiner comprises a combiner upper waveguide cavity and a combiner lower waveguide cavity which are symmetrically arranged, and the combiner upper waveguide cavity and the combiner lower waveguide cavity are connected through screws. Microwave signals are distributed by the waveguide three-way power distributor, amplified by the amplifier, and then combined by the three-way power combiner. By constructing a brand-new three-path power division and synthesis network architecture, the problem of mutual load traction of amplifiers in a traditional non-isolated network is solved, and the stability of power synthesis is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of microwave circuits and systems, and particularly relates to a high-isolation waveguide three-way power division and synthesis network structure. BACKGROUND

[0002] Power synthesis is a technology for improving the power output capability of microwave systems, and is one of the earliest, most researched and most widely applied technologies in the field of microwaves. Its core principle is to combine multiple weak signals into a strong signal by controlling the superposition of electromagnetic waves in the microwave network. This process involves complex microwave signal decomposition and recombination, and must be implemented with the aid of a special power division and synthesis network.

[0003] The power division and synthesis network is usually constructed hierarchically based on a one-to-two unit structure, and common circuit forms include Wilkinson bridge, Lange bridge, branch line bridge, T-junction and magic T, etc. According to application requirements, various microwave transmission lines such as microstrip line, stripline, coaxial line, coplanar waveguide (CPW), substrate integrated waveguide (SIW) or rectangular waveguide can be used independently or in combination. The traditional hierarchical construction method can generate 2 n synthesis paths, but because it strictly limits the number of synthesis paths to a power of 2 (such as 4, 8, 16, 32, etc.), the design flexibility of the power division and synthesis network is severely limited. In particular, in high-power applications, when rectangular waveguides are used as transmission lines, the exponential increase in the number of synthesis paths will result in a significant increase in hardware resource requirements, which in turn will cause a sharp rise in device size and weight.

[0004] To solve this problem, A broadband three-way power divider based on E-Y structure proposes a method for constructing a non-2 n way power division and synthesis network based on unequal power division structure. However, because the E-Y branches used in this design are all lossless three-port elements, the isolation of the three-way power divider constructed is poor, which will seriously affect its performance in power synthesis applications. SUMMARY

[0005] The purpose of the present application is to solve the above problems and provide a high-isolation waveguide three-way power division and synthesis network structure with high isolation and significantly improved power synthesis stability.

[0006] To solve the above technical problems, the technical scheme of the present application is: a high-isolation waveguide three-way power division and synthesis network structure, comprising a waveguide three-way power divider and a waveguide three-way power combiner, and an amplifier connected between the waveguide three-way power divider and the waveguide three-way power combiner; the waveguide three-way power divider comprises symmetrically arranged power divider upper waveguide cavities and power divider lower waveguide cavities, and the power divider upper waveguide cavities and the power divider lower waveguide cavities are connected by screws; the waveguide three-way power combiner comprises symmetrically arranged combiner upper waveguide cavities and combiner lower waveguide cavities, and the combiner upper waveguide cavities and the combiner lower waveguide cavities are connected by screws; after a microwave signal is divided by the waveguide three-way power divider, the microwave signal is amplified by the amplifier and then combined by the three-way power combiner.

[0007] Preferably, the power divider upper waveguide cavity is provided with a power divider upper waveguide cavity first half port, a power divider upper waveguide cavity middle upper cavity, a power divider upper waveguide cavity second half port and a power divider upper waveguide cavity third half port, the power divider upper waveguide cavity first half port is connected with one end of the power divider upper waveguide cavity middle upper cavity, the other end of the power divider upper waveguide cavity middle upper cavity is connected with the power divider upper waveguide cavity second half port and the power divider upper waveguide cavity third half port respectively; the power divider lower waveguide cavity is provided with a power divider lower waveguide cavity first half port, a power divider lower waveguide cavity middle lower cavity, a power divider lower waveguide cavity second half port and a power divider lower waveguide cavity third half port, the power divider lower waveguide cavity first half port is connected with one end of the power divider lower waveguide cavity middle lower cavity, the other end of the power divider lower waveguide cavity middle lower cavity is connected with the power divider lower waveguide cavity second half port and the power divider lower waveguide cavity third half port; the power divider upper waveguide cavity first half port and the power divider lower waveguide cavity first half port are symmetrically arranged, the power divider upper waveguide cavity second half port and the power divider lower waveguide cavity second half port are symmetrically arranged, and the power divider upper waveguide cavity third half port and the power divider lower waveguide cavity third half port are symmetrically arranged.

[0008] Preferably, a suspended probe load is arranged in the first half port of the lower waveguide cavity of the power divider, and the first half port of the upper waveguide cavity of the power divider, the suspended probe load and the first half port of the lower waveguide cavity of the power divider combine to form a planar load magic T structure; the middle lower cavity of the lower waveguide cavity of the power divider comprises a half waveguide main path, a half waveguide coupling path, a half waveguide wide edge slot and a half narrow waveguide isolation end, the middle upper cavity of the upper waveguide cavity of the power divider has the same structure as the middle lower cavity of the lower waveguide cavity of the power divider, and a T-shaped probe load is further arranged on the middle lower cavity of the lower waveguide cavity of the power divider, and the middle upper cavity of the upper waveguide cavity of the power divider and the half waveguide main path, the half waveguide coupling path, the half waveguide wide edge slot and the half narrow waveguide isolation end in the middle lower cavity of the lower waveguide cavity of the power divider combine to form a complete waveguide main path, a waveguide coupling path, a waveguide wide edge slot and a narrow waveguide isolation end, and the middle upper cavity of the upper waveguide cavity of the power divider, the middle lower cavity of the lower waveguide cavity of the power divider, the narrow waveguide isolation end and the T-shaped probe load combine to form a waveguide-narrow waveguide slot coupling structure; the third half port of the upper waveguide cavity of the power divider and the third half port of the lower waveguide cavity of the power divider combine to form a power divider E-plane T-shaped section.

[0009] Preferably, the upper waveguide cavity of the synthesizer is provided with a first half port, a middle cavity, a second half port and a third half port, the first half port is connected to the end of the middle cavity, the other end of the middle cavity is connected to the second half port and the third half port respectively; the lower waveguide cavity of the synthesizer is provided with a first half port, a middle cavity, a second half port and a third half port, the first half port is connected to the end of the middle cavity, the other end of the middle cavity is connected to the second half port and the third half port respectively.

[0010] Preferably, the synthesizer upper waveguide cavity is provided with a synthesizer upper waveguide cavity semi-absorption waveguide, the synthesizer lower waveguide cavity is further provided with a double-end suspended probe and a synthesizer lower waveguide cavity semi-absorption waveguide, the synthesizer upper waveguide cavity semi-absorption waveguide and the synthesizer lower waveguide cavity semi-absorption waveguide are combined to form an absorption waveguide, and the synthesizer upper waveguide cavity first half port, the synthesizer lower waveguide cavity first half port, the double-end suspended probe and the absorption waveguide are combined to form a waveguide load magic T structure (203); the synthesizer lower waveguide cavity middle cavity includes a synthesizer semi-waveguide matching load, a synthesizer semi-waveguide main path, a synthesizer semi-waveguide coupling path, a synthesizer semi-waveguide wide-edge slot and a synthesizer semi-waveguide isolation end, the synthesizer upper waveguide cavity middle cavity has the same structure as the synthesizer lower waveguide cavity middle cavity, the two synthesizer semi-waveguide matching loads are combined to form a waveguide matching load, the two synthesizer semi-waveguide main paths are combined to form a waveguide main path, the two synthesizer semi-waveguide coupling paths are combined to form a waveguide coupling path, the two synthesizer semi-waveguide wide-edge slots are combined to form a waveguide wide-edge slot, the two synthesizer semi-waveguide isolation ends are combined to form a waveguide isolation end, and the synthesizer upper waveguide cavity middle cavity and the synthesizer lower waveguide cavity middle cavity are combined to form a narrow waveguide-waveguide slot coupling structure; the synthesizer upper waveguide cavity third half port and the synthesizer lower waveguide cavity third half port are combined to form a power synthesizer E-plane T-shaped section.

[0011] Preferably, in the equivalent network architecture of the network structure, the power divider upper waveguide cavity first half port and the power divider lower waveguide cavity first half port in the three-way power divider are combined to be equivalent to the combining port of the power divider, the two power divider upper waveguide cavity second half ports and the two power divider lower waveguide cavity second half ports are combined to be equivalent to the first branch port and the third branch port of the power divider, and the power divider upper waveguide cavity third port and the power divider lower waveguide cavity third port are combined to be equivalent to the second branch port of the power divider; the planar load magic T structure is equivalent to the first basic unit of the power divider, the waveguide-narrow waveguide slot coupling structure is equivalent to the second basic unit of the power divider, and the power divider E-plane T-shaped section is equivalent to the third basic unit of the power divider; after the microwave signal is input into the power divider from the combining port, it is divided into three equal-amplitude signals and output from the first branch port, the second branch port and the third branch port of the power divider respectively.

[0012] Preferably, the first half-port of the synthesizer upper waveguide cavity and the first half-port of the synthesizer lower waveguide cavity are equivalent to the synthesizer combining port when combined, the two second half-ports of the synthesizer upper waveguide cavity and the two second half-ports of the synthesizer lower waveguide cavity are equivalent to the synthesizer first and third branch ports respectively when combined, and the third half-port of the synthesizer upper waveguide cavity and the third half-port of the synthesizer lower waveguide cavity are equivalent to the synthesizer second branch port when combined; the E-plane T-junction of the power synthesizer is equivalent to the third basic unit of the synthesizer, the narrow waveguide-waveguide slot coupling structure is equivalent to the second basic unit of the synthesizer, and the waveguide load magic T structure is equivalent to the third basic unit of the synthesizer, and the third basic unit of the synthesizer is connected with the synthesizer combining port.

[0013] Preferably, the number of amplifiers is three, which are a first amplifier, a second amplifier and a third amplifier, the first amplifier is connected with the power divider first branch port and the synthesizer first branch port respectively, the second amplifier is connected with the power divider second branch port and the synthesizer second branch port respectively, and the third amplifier is connected with the power divider third branch port and the synthesizer third branch port respectively.

[0014] The beneficial effects of the present application are:

[0015] 1. Compared with the prior art, the waveguide three-way power division and synthesis network structure provided by the present application has a significant isolation characteristic advantage. Specifically, the ports DP1-DP3 or CP1-CP3 are completely isolated from each other and do not interfere with each other. Taking the power divider as an example, the PD1 and PD2 units therein contain a resistor, representing that the branch ports of the unit are isolated from each other, and the PC1 does not contain, which is a non-isolated three-port unit. For an ideal isolation unit, the two branches should not interfere with each other under any circumstances, so its isolation characteristic is very similar to a single-pole double-throw switch, that is, regardless of the state of the switch, there is no path between the two branches. Therefore, the analysis of the isolation degree of the power division / synthesis device in the power division and synthesis network can be equivalent to the equivalent model of the switch network. The model contains three groups of switches, which can form eight different combination states. Through analysis, it can be found that there is no signal path between P1-P3 ports at all in all possible working states. This result fully proves that the three-way power division and synthesis network meets the full-port isolation condition.

[0016] 2. By constructing a brand-new three-way power division and synthesis network architecture, the waveguide three-way power division / synthesis device with full-port isolation is designed, which solves the problem of mutual load dragging of amplifiers in the traditional non-isolated network, and can significantly improve the stability of power synthesis, providing a technical guarantee for the reliable operation of high-power microwave systems. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1is a waveguide three-way power divider circuit structure diagram of a high-isolation waveguide three-way power division and synthesis network structure of the present application;

[0018] Figure 2 is a waveguide three-way power combiner circuit structure diagram of the present application;

[0019] Figure 3 is a three-way power division and synthesis network architecture diagram of the present application;

[0020] Figure 4 is a three-way power division and synthesis network architecture diagram of the present application Figure 3 is a port isolation principle equivalent analysis model diagram of a three-way power divider / combiner in the present application;

[0021] Figure 5 is a three-way power division and synthesis network architecture diagram of the present application Figure 4 is an eight-switch network combination state diagram of the equivalent analysis model in the present application;

[0022] Figure 6 is a three-way power division and synthesis network architecture diagram of the present application Figure 1 is a port return, port transmission, and port isolation effect diagram of the circuit of the present application;

[0023] Figure 7 is a port return, port transmission, and port isolation effect diagram of the circuit of the present application; Figure 2

[0024] Figure 8 is a back-to-back return and transmission effect diagram of a high-isolation waveguide three-way power division and synthesis network provided by the present application.

[0025] ​Figure reference numerals: 101. Upper waveguide cavity of the power divider; 102. Lower waveguide cavity of the power divider; 103. Planar load magic-T structure; 104. Waveguide-narrow waveguide slot coupling structure; 105. E-plane T-joint of the power divider; 106. Suspended probe load; 107. Waveguide three-stage impedance transformer; 108. Waveguide main path; 109. Waveguide coupling path; 110. Wide-side slot of the waveguide; 111. Narrow waveguide isolation end; 112. T-shaped probe load; 201. Upper waveguide cavity of the combiner; 202. Lower waveguide cavity of the combiner; 203. Waveguide load magic-T structure; 204. Narrow waveguide-waveguide slot coupling structure; 205. E-plane T-joint of the power combiner; 206. Double-ended suspended probe; 207. Absorbing waveguide; 20 8. Waveguide matching load; 209. Waveguide main path; 210. Waveguide coupling path; 211. Waveguide wide-side slot; 212. Waveguide isolation terminal; DP0. Combiner port; DP1. Power divider first branch port; DP2. Power divider second branch port; DP3. Power divider third branch port; PD1. Power divider first basic unit; PD2. Power divider second basic unit; PC1. Power divider third basic unit; CP0. Combiner combiner port; CP1. Combiner first branch port; CP2. Combiner second branch port; CP3. Combiner third branch port; PD3. Combiner third basic unit; PC2. Combiner second basic unit; PC3. Combiner third basic unit. Detailed Implementation

[0026] The present invention will be further described below with reference to the accompanying drawings and specific embodiments:

[0027] like Figures 1 to 8 As shown, this invention provides a high-isolation waveguide three-way power divider and combiner network structure, including a waveguide three-way power divider and a waveguide three-way power combiner, with an amplifier connected between the two. The waveguide three-way power divider includes symmetrically arranged upper waveguide cavities 101 and 102, connected by screws. The waveguide three-way power combiner includes symmetrically arranged upper waveguide cavities 201 and 202, connected by screws. Microwave signals are distributed by the waveguide three-way power divider, amplified by the amplifier, and then combined by the three-way power combiner.

[0028] The power divider upper waveguide cavity 101 is provided with a power divider upper waveguide cavity first half port, a power divider upper waveguide cavity middle upper cavity, a power divider upper waveguide cavity second half port and a power divider upper waveguide cavity third half port. The power divider upper waveguide cavity first half port is connected with one end of the power divider upper waveguide cavity middle upper cavity. The other end of the power divider upper waveguide cavity middle upper cavity is connected with the power divider upper waveguide cavity second half port and the power divider upper waveguide cavity third half port respectively. The power divider lower waveguide cavity 102 is provided with a power divider lower waveguide cavity first half port, a power divider lower waveguide cavity middle lower cavity, a power divider lower waveguide cavity second half port and a power divider lower waveguide cavity third half port. The power divider lower waveguide cavity first half port is connected with one end of the power divider lower waveguide cavity middle lower cavity. The other end of the power divider lower waveguide cavity middle lower cavity is connected with the power divider lower waveguide cavity second half port and the power divider lower waveguide cavity third half port. The power divider upper waveguide cavity first half port is symmetrically arranged with the power divider lower waveguide cavity first half port. The power divider upper waveguide cavity second half port is symmetrically arranged with the power divider lower waveguide cavity second half port. The power divider upper waveguide cavity third half port is symmetrically arranged with the power divider lower waveguide cavity third half port.

[0029] The power divider lower waveguide cavity first half port is provided with a suspended probe load 106. The power divider upper waveguide cavity first half port, the power divider lower waveguide cavity first half port and the suspended probe load 106 are combined to form a planar load magic T structure 103. The power divider lower waveguide cavity middle lower cavity comprises a half waveguide main path, a half waveguide coupling path, a half waveguide wide edge slot and a half narrow waveguide isolation end. The power divider upper waveguide cavity middle upper cavity has the same structure as the power divider lower waveguide cavity middle lower cavity. A T-shaped probe load 112 is further arranged on the power divider lower waveguide cavity middle lower cavity. The power divider upper waveguide cavity middle upper cavity and the half waveguide main path, the half waveguide coupling path, the half waveguide wide edge slot and the half narrow waveguide isolation end in the power divider lower waveguide cavity middle lower cavity are combined to form a complete waveguide main path 108, a waveguide coupling path 109, a waveguide wide edge slot 110 and a narrow waveguide isolation end 111. The power divider upper waveguide cavity middle upper cavity, the power divider lower waveguide cavity middle lower cavity, the narrow waveguide isolation end 111 and the T-shaped probe load 112 are combined to form a waveguide-narrow waveguide slot coupling structure 104. The power divider upper waveguide cavity third half port and the power divider lower waveguide cavity third half port are combined to form a power divider E-plane T-shaped section 105.

[0030] The waveguide main path 108 and the waveguide coupling path 109 are arranged in parallel. The waveguide wide edge slot 110 connects the waveguide main path 108 and the waveguide coupling path 109. A plurality of waveguide wide edge slots 110 are arranged in parallel.

[0031] In this embodiment, when the upper waveguide cavity 101 and the lower waveguide cavity 102 of the power divider are combined, the first half-port of the upper waveguide cavity and the first half-port of the lower waveguide cavity of the power divider constitute the complete first port of the power divider waveguide cavity, the upper intermediate cavity of the upper waveguide cavity and the lower intermediate cavity of the lower waveguide cavity of the power divider constitute the complete lower intermediate cavity of the power divider waveguide cavity, the second half-port of the upper waveguide cavity and the second half-port of the lower waveguide cavity of the power divider constitute the second port of the power divider waveguide cavity, and the third half-port of the upper waveguide cavity and the third half-port of the lower waveguide cavity of the power divider constitute the third port of the power divider waveguide cavity.

[0032] A three-stage impedance transformer for the upper waveguide cavity of the power divider is provided between the first half port of the upper waveguide cavity and the middle upper cavity of the upper waveguide cavity of the power divider. A three-stage impedance transformer for the lower waveguide cavity of the power divider is provided between the first half port of the lower waveguide cavity of the power divider and the middle lower cavity of the lower waveguide cavity of the power divider. The three-stage impedance transformer for the upper waveguide cavity of the power divider and the three-stage impedance transformer for the lower waveguide cavity of the power divider constitute a complete three-stage waveguide impedance transformer 107.

[0033] There are two waveguide-narrow waveguide slot coupling structures 104 arranged in parallel. The planar load magic T structure 103 and the power divider E-plane T-section 105 are both located between adjacent waveguide-narrow waveguide slot coupling structures 104. The planar load magic T structure 103 and the power divider E-plane T-section 105 are each connected to two waveguide-narrow waveguide slot coupling structures 104 respectively.

[0034] like Figure 2 As shown, the upper waveguide cavity 201 of the synthesizer includes a first half-port, an intermediate cavity, a second half-port, and a third half-port. The first half-port is connected to one end of the intermediate cavity, and the other end of the intermediate cavity is connected to both the second and third half-ports. The lower waveguide cavity 202 of the synthesizer includes a first half-port, an intermediate cavity, a second half-port, and a third half-port. The first half-port is connected to one end of the intermediate cavity, and the other end of the intermediate cavity is connected to both the second and third half-ports.

[0035] The synthesizer upper waveguide cavity 201 and the synthesizer lower waveguide cavity 202 are combined, the synthesizer upper waveguide cavity first half port and the synthesizer lower waveguide cavity first half port constitute a complete synthesizer waveguide cavity first port, the synthesizer upper waveguide cavity middle cavity and the synthesizer lower waveguide cavity middle cavity constitute a complete synthesizer waveguide cavity middle cavity, the synthesizer upper waveguide cavity second half port and the synthesizer lower waveguide cavity second half port constitute a complete synthesizer waveguide cavity second port, and the synthesizer upper waveguide cavity third half port and the synthesizer lower waveguide cavity third half port constitute a synthesizer waveguide cavity third port.

[0036] The synthesizer upper waveguide cavity 201 is provided with a synthesizer upper waveguide cavity half-absorption waveguide, and the synthesizer lower waveguide cavity 202 is further provided with a double-end suspended probe 206 and a synthesizer lower waveguide cavity half-absorption waveguide. When the synthesizer upper waveguide cavity half-absorption waveguide and the synthesizer lower waveguide cavity half-absorption waveguide are combined, an absorption waveguide 207 is formed. When the synthesizer upper waveguide cavity first half port, the synthesizer lower waveguide cavity first half port, the double-end suspended probe 206 and the absorption waveguide 207 are combined, a waveguide load magic T structure 203 is formed. The synthesizer lower waveguide cavity middle cavity includes a synthesizer half-waveguide matching load, a synthesizer half-waveguide main path, a synthesizer half-waveguide coupling path, a synthesizer half-waveguide wide-edge slot and a synthesizer half-waveguide isolation end. The synthesizer upper waveguide cavity middle cavity has the same structure as the synthesizer lower waveguide cavity middle cavity. When two synthesizer half-waveguide matching loads are combined, a waveguide matching load 208 is formed. When two synthesizer half-waveguide main paths are combined, a waveguide main path 209 is formed. When two synthesizer half-waveguide coupling paths are combined, a waveguide coupling path 210 is formed. When two synthesizer half-waveguide wide-edge slots are combined, a waveguide wide-edge slot 211 is formed. When two synthesizer half-waveguide isolation ends are combined, a waveguide isolation end 212 is formed. When the synthesizer upper waveguide cavity middle cavity and the synthesizer lower waveguide cavity middle cavity are combined, a narrow waveguide-waveguide slot coupling structure 204 is formed. When the synthesizer upper waveguide cavity third half port and the synthesizer lower waveguide cavity third half port are combined, a power synthesizer E-plane T-shaped section 205 is formed.

[0037] In the network structure equivalent to the network architecture, the first half port of the waveguide cavity in the three-way power divider and the first half port of the waveguide cavity in the power divider are combined to be equivalent to the combining port DP0 of the power divider, the second half port of the two waveguide cavities in the power divider and the second half port of the two waveguide cavils in the power divider are combined to be equivalent to the first branch port DP1 and the third branch port DP3 of the power divider, and the third port of the waveguide cavity in the power divider and the third port of the waveguide cavity in the power divider are combined to be equivalent to the second branch port DP2 of the power divider. The planar load magic T structure 103 is equivalent to the first basic unit PD1 of the power divider, the waveguide-narrow waveguide gap coupling structure 104 is equivalent to the second basic unit PD2 of the power divider, and the E-plane T-shaped section 105 of the power divider is equivalent to the third basic unit PC1 of the power divider. After the microwave signal is input from the combining port DP0 of the power divider, it is divided into three equal amplitude signals, which are output from the first branch port DP1, the second branch port DP2 and the third branch port DP3 of the power divider, respectively.

[0038] When the first half port of the waveguide cavity in the synthesizer and the first half port of the waveguide cavity in the synthesizer are combined, they are equivalent to the combining port CP0 of the synthesizer, when the second half port of the two waveguide cavities in the synthesizer and the second half port of the two waveguide cavities in the synthesizer are combined, they are equivalent to the first branch port CP1 and the third branch port CP3 of the synthesizer, respectively, and when the third half port of the waveguide cavity in the synthesizer and the third half port of the waveguide cavity in the synthesizer are combined, they are equivalent to the second branch port CP2 of the synthesizer. The E-plane T-shaped section 205 of the power synthesizer is equivalent to the third basic unit PD3 of the synthesizer, the narrow waveguide-waveguide gap coupling structure 204 is equivalent to the second basic unit PC2 of the synthesizer, and the waveguide load magic T structure 203 is equivalent to the third basic unit PC3 of the synthesizer. The third basic unit PC3 of the synthesizer is connected with the combining port CP0 of the synthesizer.

[0039] The number of amplifiers is three, which are the first amplifier, the second amplifier and the third amplifier, the first amplifier is connected with the first branch port DP1 of the power divider and the first branch port CP1 of the synthesizer, respectively, the second amplifier is connected with the second branch port DP2 of the power divider and the second branch port CP2 of the synthesizer, respectively, and the third amplifier is connected with the third branch port DP3 of the power divider and the third branch port CP3 of the synthesizer, respectively.

[0040] The workflow of the present application is as follows: the microwave signal is input into the power divider from the combining port DP0, and is divided into three equal amplitude signals, which are output from the first branch port DP1, the second branch port DP2 and the third branch port DP3 of the power divider respectively. The three signals are amplified by three identical amplifiers respectively, and are input into the power combiner from the first branch port CP1, the second branch port CP2 and the third branch port CP3 of the combiner. Finally, the three signals are combined into one signal in the combiner and are output from the combining port CP0 of the combiner. In the ideal case, the power of the combined microwave signal is three times the output power of a single amplifier.

[0041] The equivalent model of the three-way power divider of the present application is composed of four one-to-two basic units, including a first power divider basic unit PD1, a second power divider basic unit PD2 and a third power divider basic unit PC1. The first power divider basic unit PD1 and the third power divider basic unit PC1 adopt equal proportion branch design, and the second power divider basic unit PD2 adopts 2:1 branch proportion. The input signal is input into the first power divider basic unit PD1 from the combining port DP0, and is divided into two paths, and then is divided into two paths with 2:1 proportion by two second power divider basic units PD2, wherein the signals with 2 / 3 power are directly output from the first branch port DP1 and the third branch port DP3 of the power divider, and the signals with 1 / 3 power are combined into one path by the third power divider basic unit PC1 and are output from the second branch port DP2 of the power divider, thereby realizing three-way equal amplitude power division. For the power combiner with symmetrical structure, the workflow is opposite to the above process.

[0042] The three-way power combiner of the present application adopts a full waveguide structure. The rectangular waveguide is split into an upper waveguide cavity 201 and a lower waveguide cavity 202 along the center of the wide side of the rectangular waveguide. After the internal structure and circuit are processed and manufactured, the two cavities are fixed together as a whole by screws. The double-ended suspended probe 206 is located at the waveguide bifurcation of the waveguide load magic T structure 203, and the crosstalk signal between the bifurcations is coupled out and sent to the absorbing waveguide 207 provided with a waveguide matching load 208, thereby meeting the port isolation in high-power synthesis. The waveguide main path 209 of the waveguide-slot coupling structure 204 adopts a narrow waveguide to match the front and rear stages, and the waveguide coupling path 210 adopts a standard waveguide to match the port waveguide width. The microwave signal in the waveguide main path 209 is coupled out by 2 / 3 of the power through the waveguide wide side slot 211 into the waveguide coupling path 210, and is finally transmitted to the power divider first branch port DP1 and the power divider third branch port DP3. The remaining 1 / 3 power signal in the waveguide main path 209 is combined to the DP2 port through the E-plane T junction 205. The waveguide isolation end 212 of the waveguide-slot coupling structure 204 is designed with a waveguide matching load 208, which can absorb high-power crosstalk signals.

[0043] As shown in Figure 4 , the combining port DP0 is simplified as P0, the power divider first branch port DP1, the power divider second branch port DP2 and the power divider third branch port DP3 are simplified as P1, P2 and P3 respectively, and the power divider is simplified as Figure 4 . Figure 5 The comparison diagram under different functional states of Figure 4 .

[0044] The effect of the waveguide three-way power divider is shown in Figure 6 . The return loss of all ports is lower than -20 dB, the transmission of the three branches is -4.77±0.23 dB, and the isolation between them is higher than 27 dB.

[0045] The effect of the waveguide three-way power combiner is shown in Figure 7 . The return loss of all ports is lower than -21 dB, the transmission of the three branches is -4.77±0.4 dB, and the isolation between them is higher than 27.6 dB.

[0046] Due to the requirement of phase coherence in synthesis and the difference in power handling capability, the waveguide three-way power divider and the waveguide three-way power combiner are not consistent in circuit structure. They are connected back-to-back to form a waveguide three-way power dividing and combining network, and the effect is shown in Figure 8 . The return loss is lower than -19.6 dB, and the insertion loss is less than 0.3 dB.

[0047] Those skilled in the art will appreciate that the embodiments described herein are presented for purposes of illustration and that the inventive principles are not limited to these particular embodiments. Other variations and modifications can be made to the embodiments without departing from the spirit and scope of the inventive principles.

Claims

1. A waveguide three-way power splitting and combining network structure with high isolation, characterized in that: The application relates to a waveguide three-way power divider and a waveguide three-way power combiner, wherein an amplifier is connected between the waveguide three-way power divider and the waveguide three-way power combiner; the waveguide three-way power divider comprises symmetrically arranged power divider upper waveguide cavities (101) and power divider lower waveguide cavities (102), and the power divider upper waveguide cavities (101) and the power divider lower waveguide cavities (102) are connected through screws; the waveguide three-way power combiner comprises symmetrically arranged combiner upper waveguide cavities (201) and combiner lower waveguide cavities (202), and the combiner upper waveguide cavities (201) and the combiner lower waveguide cavities (202) are connected through screws; after a microwave signal is divided through the waveguide three-way power divider, the microwave signal is amplified by the amplifier and then combined through the three-way power combiner.

2. The high-isolation waveguide three-way power-split-combine network structure of claim 1, wherein: The power divider upper waveguide cavity (101) is provided with a power divider upper waveguide cavity first half port, a power divider upper waveguide cavity middle upper cavity, a power divider upper waveguide cavity second half port and a power divider upper waveguide cavity third half port; the power divider upper waveguide cavity first half port is connected with one end of the power divider upper waveguide cavity middle upper cavity, and the other end of the power divider upper waveguide cavity middle upper cavity is connected with the power divider upper waveguide cavity second half port and the power divider upper waveguide cavity third half port respectively; the power divider lower waveguide cavity (102) is provided with a power divider lower waveguide cavity first half port, a power divider lower waveguide cavity middle lower cavity, a power divider lower waveguide cavity second half port and a power divider lower waveguide cavity third half port; the power divider lower waveguide cavity first half port is connected with one end of the power divider lower waveguide cavity middle lower cavity, and the other end of the power divider lower waveguide cavity middle lower cavity is connected with the power divider lower waveguide cavity second half port and the power divider lower waveguide cavity third half port; the power divider upper waveguide cavity first half port is symmetrically arranged with the power divider lower waveguide cavity first half port, the power divider upper waveguide cavity second half port is symmetrically arranged with the power divider lower waveguide cavity second half port, and the power divider upper waveguide cavity third half port is symmetrically arranged with the power divider lower waveguide cavity third half port.

3. The high-isolation waveguide three-way power-split-combine network structure of claim 2, wherein: The first half port of the power divider lower waveguide cavity is provided with a suspended probe load (106), and the first half port of the power divider upper waveguide cavity, the first half port of the power divider lower waveguide cavity and the suspended probe load (106) form a planar load magic T structure (103) when combined; the middle lower cavity of the power divider lower waveguide cavity comprises a half waveguide main path, a half waveguide coupling path, a half waveguide wide edge slot and a half narrow waveguide isolation end, the middle upper cavity of the power divider upper waveguide cavity has the same structure as the middle lower cavity of the power divider lower waveguide cavity, and a T-shaped probe load (112) is further arranged on the middle lower cavity of the power divider lower waveguide cavity; the middle upper cavity of the power divider upper waveguide cavity and the half waveguide main path, the half waveguide coupling path, the half waveguide wide edge slot and the half narrow waveguide isolation end in the middle lower cavity of the power divider lower waveguide cavity form a complete waveguide main path (108), a waveguide coupling path (109), a waveguide wide edge slot (110) and a narrow waveguide isolation end (111) when combined, and the middle upper cavity of the power divider upper waveguide cavity, the middle lower cavity of the power divider lower waveguide cavity, the narrow waveguide isolation end (111) and the T-shaped probe load (112) form a waveguide-narrow waveguide slot coupling structure (104) when combined; the third half port of the power divider upper waveguide cavity and the third half port of the power divider lower waveguide cavity form a power divider E-plane T-shaped section (105) when combined.

4. The high-isolation waveguide three-way power-split-combine network structure of claim 3, wherein: The synthesizer upper waveguide cavity (201) is provided with a synthesizer upper waveguide cavity first half port, a synthesizer upper waveguide cavity middle cavity, a synthesizer upper waveguide cavity second half port and a synthesizer upper waveguide cavity third half port, the synthesizer upper waveguide cavity first half port is connected with the end of the synthesizer upper waveguide cavity middle cavity, the other end of the synthesizer upper waveguide cavity middle cavity is connected with the synthesizer upper waveguide cavity second half port and the synthesizer upper waveguide cavity third half port respectively; the synthesizer lower waveguide cavity (202) is provided with a synthesizer lower waveguide cavity first half port, a synthesizer lower waveguide cavity middle cavity, a synthesizer lower waveguide cavity second half port and a synthesizer lower waveguide cavity third half port, the end of the synthesizer lower waveguide cavity first half port is connected, the other end of the synthesizer lower waveguide cavity middle cavity is connected with the synthesizer lower waveguide cavity second half port and the synthesizer lower waveguide cavity third half port respectively.

5. The high-isolation waveguide three-way power-split-combine network structure of claim 4, wherein: The synthesizer upper waveguide cavity (201) is provided with a synthesizer upper waveguide cavity semi-absorption waveguide, and the synthesizer lower waveguide cavity (202) is further provided with a double-end suspended probe (206) and a synthesizer lower waveguide cavity semi-absorption waveguide; when the synthesizer upper waveguide cavity semi-absorption waveguide and the synthesizer lower waveguide cavity semi-absorption waveguide are combined, an absorption waveguide (207) is formed; when the synthesizer upper waveguide cavity first half port, the synthesizer lower waveguide cavity first half port, the double-end suspended probe (206) and the absorption waveguide (207) are combined, a waveguide load magic T structure (203) is formed; the synthesizer lower waveguide cavity middle cavity includes a synthesizer semi-waveguide matching load, a synthesizer semi-waveguide main path, a synthesizer semi-waveguide coupling path, a synthesizer semi-waveguide wide-edge slot and a synthesizer semi-waveguide isolation end; the synthesizer upper waveguide cavity middle cavity has the same structure as the synthesizer lower waveguide cavity middle cavity; when two synthesizer semi-waveguide matching loads are combined, a waveguide matching load (208) is formed; when two synthesizer semi-waveguide main paths are combined, a waveguide main path (209) is formed; when two synthesizer semi-waveguide coupling paths are combined, a waveguide coupling path (210) is formed; when two synthesizer semi-waveguide wide-edge slots are combined, a waveguide wide-edge slot (211) is formed; when two synthesizer semi-waveguide isolation ends are combined, a waveguide isolation end (212) is formed; when the synthesizer upper waveguide cavity middle cavity and the synthesizer lower waveguide cavity middle cavity are combined, a narrow waveguide-waveguide slot coupling structure (204) is formed; and when the synthesizer upper waveguide cavity third half port and the synthesizer lower waveguide cavity third half port are combined, a power synthesizer E-plane T-shaped section (205) is formed.

6. The high-isolation waveguide three-way power-split-combine network structure of claim 5, wherein: In the network structure equivalent to the network architecture, the first half port of the power divider in the three-way power divider and the first half port of the power divider lower waveguide cavity are combined to be equivalent to the combining port (DP0) of the power divider; the second half port of the power divider upper waveguide cavity and the second half port of the power divider lower waveguide cavity are combined to be equivalent to the first branch port (DP1) and the third branch port (DP3) of the power divider; and the third half port of the power divider upper waveguide cavity and the third half port of the power divider lower waveguide cavity are combined to be equivalent to the second branch port (DP2) of the power divider; the planar load magic T structure (103) is equivalent to the first basic unit (PD1) of the power divider; the waveguide-narrow waveguide slot coupling structure (104) is equivalent to the second basic unit (PD2) of the power divider; and the power divider E-plane T-shaped section (105) is equivalent to the third basic unit (PC1) of the power divider; after the microwave signal is input into the power divider from the combining port (DP0), the microwave signal is divided into three equal-amplitude signals, which are output from the first branch port (DP1), the second branch port (DP2) and the third branch port (DP3) of the power divider, respectively.

7. The high-isolation waveguide three-way power-split-combine network structure of claim 6, wherein: The first half port of the synthesizer upper waveguide cavity and the first half port of the synthesizer lower waveguide cavity are equivalent to a synthesizer combining port (CP0) when combined, the two second half ports of the synthesizer upper waveguide cavity and the two second half ports of the synthesizer lower waveguide cavity are equivalent to a synthesizer first shunt port (CP1) and a synthesizer third shunt port (CP3) respectively when combined, and the third half port of the synthesizer upper waveguide cavity and the third half port of the synthesizer lower waveguide cavity are equivalent to a synthesizer second shunt port (CP2) when combined; the E-plane T-junction (205) of the power synthesizer is equivalent to a synthesizer third basic unit (PD3), the narrow waveguide-waveguide gap coupling structure (204) is equivalent to a synthesizer second basic unit (PC2), the waveguide load magic T structure (203) is equivalent to a synthesizer third basic unit (PC3), and the synthesizer third basic unit (PC3) is connected with the synthesizer combining port (CP0).

8. The high-isolation waveguide three-way power-split-combine network structure of claim 6, wherein: The number of the amplifiers is three, which are a first amplifier, a second amplifier and a third amplifier, the first amplifier is connected with the power divider first shunt port (DP1) and the synthesizer first shunt port (CP1) respectively, the second amplifier is connected with the power divider second shunt port (DP2) and the synthesizer second shunt port (CP2) respectively, and the third amplifier is connected with the power divider third shunt port (DP3) and the synthesizer third shunt port (CP3) respectively.

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