Control system, method and semiconductor process apparatus for a magnetron

Abstract

The application discloses a control system and method of a magnetron and a semiconductor process equipment. The control system comprises: one end of a first rotating shaft is connected with a first motor, and the other end is connected with a first rotating arm; one end of a second rotating shaft is connected with a second motor, and the other end is connected with one end of the first rotating arm and a second rotating arm respectively, and one end of the second rotating arm is connected with the magnetron; the first motor drives the first and second rotating arms and the magnetron to rotate when rotating; the second motor drives the second rotating arm and the magnetron to rotate when rotating; a controller controls the first motor to rotate at a first rotating speed according to a process time of one process and a number of rotations of the first rotating arm in the one process, so that the first rotating arm rotates a whole circle in the process time, and controls the second motor to rotate at a second rotating speed, so that the second rotating arm rotates an integer multiple of half a circle relative to the first rotating arm in the process time. The application improves deposition uniformity and target material utilization.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor technology, and particularly relates to a control system and method of a magnetron and a semiconductor process equipment. BACKGROUND

[0002] In the manufacture of integrated circuit chips, semiconductor devices are interconnected by various conductive metals to ensure the propagation of signals, and this technology is referred to as metal interconnection technology. Copper interconnection is the mainstream metal interconnection technology, but since copper is difficult to etch, a dual damascene process is commonly used in copper interconnection, that is, a trench and a via are formed on a substrate by photolithography and etching technology, then a barrier layer and a copper seed layer are sequentially deposited in the trench and the via by physical vapor deposition, and finally the trench and the via are filled by using copper electrochemical plating (ECP) technology.

[0003] With the increasing complexity of integrated circuits, the feature size of semiconductor devices is gradually reduced, which means that the opening of the via and the trench will be reduced and the aspect ratio will be increased. In order to ensure good sidewall / bottom coverage and larger opening (if the opening is too small, the ECP cannot completely fill the trench, forming a void), it is necessary to improve the ionization rate of the deposited metal particles (such as copper, tungsten, tantalum, etc.). The current mainstream method to improve the ionization rate is to reduce the area of the magnetron to increase the power density, thereby generating high-density plasma, so that the sputtered metal atoms are more easily ionized. However, the area of the magnetron after being reduced (about 100cm 2 ) is much smaller than the area of the target material (about 1500cm 2 ), which brings serious challenges to deposition uniformity and target material utilization. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide a control system and method of a magnetron and a semiconductor process equipment to improve deposition uniformity and target material utilization.

[0005] To achieve the above-mentioned purpose, the embodiments of the present application adopt the following technical solutions:

[0006] In a first aspect, embodiments of this application provide a control system for a magnetron, comprising: a first rotating shaft, one end of which is connected to a first motor, and the other end of which is connected to a first rotating arm; a second rotating shaft, one end of which is connected to a second motor, and the other end of which is connected to one end of the first rotating arm and a second rotating arm, respectively, and one end of the second rotating arm is connected to the magnetron; when the first motor rotates, it drives the first rotating arm, the second rotating arm, and the magnetron to rotate around the first rotating shaft; when the second motor rotates, it drives the second rotating arm and the magnetron to rotate around the second rotating shaft; and a controller, the controller being configured to determine a first speed of the first motor and a second speed of the second motor based on the process time of one process and the number of revolutions of the first rotating arm in one process, and to control the first motor to rotate at the first speed so that the first rotating arm completes a full revolution within the process time, and to control the second motor to rotate at the second speed so that the second rotating arm rotates an integer multiple of half a revolution relative to the first rotating arm within the process time.

[0007] Secondly, embodiments of this application provide a control method for a magnetron, applied in a controller within a magnetron control system. The magnetron control system includes: a first rotating shaft, one end of which is connected to a first motor, and the other end of which is connected to a first rotating arm; a second rotating shaft, one end of which is connected to a second motor, and the other end of which is connected to one end of the first rotating arm and a second rotating arm, respectively; one end of the second rotating arm is connected to the magnetron; when the first motor rotates, it drives the first rotating arm, the second rotating arm, and the magnetron to rotate around the first rotating shaft; when the second motor rotates, it drives the second rotating arm and the magnetron to rotate around the second rotating shaft; the control method includes: determining a first speed of the first motor and a second speed of the second motor based on the process time of one process and the number of revolutions of the first rotating arm in one process; controlling the first motor to rotate at the first speed so that the first rotating arm completes a full revolution within the process time; and controlling the second motor to rotate at the second speed so that the second rotating arm rotates an integer multiple of half a revolution relative to the first rotating arm within the process time.

[0008] Thirdly, embodiments of this application provide a semiconductor process apparatus, including: a magnetron, a first rotating shaft, a first motor, a first rotating arm, a second rotating arm, a second rotating shaft, a second motor, and a controller. The controller includes at least one processor and at least one memory, the memory storing a computer program. When the computer program is executed by the processor, it implements the steps of the method described in the second aspect.

[0009] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0010] In this embodiment, the first rotating arm and the second rotating arm rotate at independent first and second rotation speeds. By precisely controlling the first and second rotation speeds, the first rotating arm can complete a full revolution within the process time, thus avoiding deposition eccentricity. Furthermore, the second rotating arm can rotate an integer multiple of half a revolution relative to the first rotating arm within the process time. This means the magnetron's trajectory can move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring the deposition uniformity of the inner and outer rings of the target material. Consequently, deposition uniformity is guaranteed, thus ensuring target material utilization. Attached Figure Description

[0011] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0012] Figure 1 This is a schematic diagram of the control system of a magnetron in related technologies;

[0013] Figure 2 This is a schematic diagram of the symmetrical trajectory of a magnetron in related technologies;

[0014] Figure 3 This is a schematic diagram illustrating how the asymmetric trajectory of the magnetron in related technologies leads to eccentric deposition results.

[0015] Figure 4 A schematic diagram of a control system for a magnetron provided in one embodiment of this application;

[0016] Figure 5 △ provided for one embodiment of this application θ 1 slightly less A schematic diagram of the thin film deposition results at that time;

[0017] Figure 6 △ provided for one embodiment of this application θ 1 slightly greater than A schematic diagram of the thin film deposition results at that time;

[0018] Figure 7 △ provided for one embodiment of this application θ 1-△ θ Schematic diagram of thin film deposition results when 2 is an integer multiple of 2π slightly less than 2π;

[0019] Figure 8 △ provided for one embodiment of this application θ 1-△ θ Schematic diagram of thin film deposition results when 2 is an integer multiple of 2π slightly greater than 2π;

[0020] Figure 9 Provided for one embodiment of this application θ When 1=0, △ θ Schematic diagram of the area swept;

[0021] Figure 10 Provided for one embodiment of this application θ When 1 = π / 4, Δ θ Schematic diagram of the area swept;

[0022] Figure 11 Provided for one embodiment of this application θ 1- θ When 2=0, △ θ 1-△ θ Schematic diagram of the area swept;

[0023] Figure 12 Provided for one embodiment of this application θ 1- θ When 2 = 3π / 4, △ θ 1-△ θ Schematic diagram of the area swept;

[0024] Figure 13 Determining the difference function provided for one embodiment of this application A flowchart illustrating the fitting coefficients;

[0025] Figure 14 Rotational speed of the first rotating arm under different total process times provided in one embodiment of this application ω Rotation speed of the first and second rotating arms ω 2. Schematic diagram of changes over time;

[0026] Figure 15 A schematic diagram of the magnetron trajectory under different total process times provided for one embodiment of this application;

[0027] Figure 16 A step-by-step illustration of the adaptive dynamic motion trajectory provided for an embodiment of this application when the process time is 12s;

[0028] Figure 17 This is a comparative diagram of the adaptive dynamic motion trajectory in this application embodiment and the planetary motion trajectory in related technologies;

[0029] Figure 18 This is a schematic diagram comparing corrosion probability curves at different target radii in the embodiments of this application and related technologies;

[0030] Figure 19 This is a schematic diagram comparing the corrosion probability at different target radii in the embodiments of this application and related technologies. Figure 1 ;

[0031] Figure 20 This is a schematic diagram comparing the corrosion probability at different target radii in the embodiments of this application and related technologies. Figure 2 ;

[0032] Figure 21 This diagram illustrates a comparison of thin film resistivity (Rs) measurement results under different trajectories in the embodiments of this application and related technologies. Figure 1 ;

[0033] Figure 22 This diagram illustrates a comparison of thin film resistivity (Rs) measurement results under different trajectories in the embodiments of this application and related technologies. Figure 2 ;

[0034] Figure 23 This is a flowchart illustrating a magnetron control method provided in one embodiment of this application. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] The terms "first," "second," etc., used in this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, "and / or" in this application indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship. It should be noted that all data involved in this application was obtained with the user's authorization.

[0037] Figure 1This is a schematic diagram of the control system of a magnetron in related technologies. For example... Figure 1 As shown, a single-motor magnetron control scheme is used, where the motor ( Figure 1 (Not shown in the image) The large rotating arm 18, central gear 12, transmission gear 13, and driven gear 14 rotate around the shaft 11 via the shaft 11. Simultaneously, the central gear 12, transmission gear 13, and driven gear 14 rotate around their respective central axes. The small rotating arm 19 drives the magnetron 15 to rotate following the driven gear 14. The large rotating arm 18 and the small rotating arm 19 rotate at a fixed speed ratio. This type of motion trajectory of the magnetron 15 is commonly referred to as a planetary motion trajectory. By changing the motor speed when the magnetron 15 is located in the inner, middle, and outer rings of the target, although the deposition uniformity of the inner and outer rings is improved, the single-motor magnetron control scheme inevitably suffers from deposition eccentricity. This problem arises because the planetary motion trajectory cannot adaptively complete a full revolution within the process time (a full revolution means that at any process time, the magnetron 15 returns to the starting point at the end of the process). According to the setting method in the relevant technology, the ratio of the motor speed when the magnetron 15 is located in the inner, middle, and outer rings of the target material is set to 2:3:1. Taking the fastest speed of 90 revolutions per minute as an example, the time to complete one cycle (i.e., the magnetron 15 returns to the starting point) is 8.25 seconds (s). At this time, the motion trajectory of the magnetron 15 is symmetrical. Figure 2 As shown. If the process time is not an integer multiple of 8.25s, a deposition eccentricity problem will occur. For example, when the process time is 7.5s, the trajectory of magnetron 15 shows a missing segment in the lower right corner. Figure 3 As shown, this asymmetrical trajectory leads to eccentric deposition results, meaning that the deposited film thickness is thinner in areas lacking a certain trajectory segment. Consequently, the target material utilization rate is also affected.

[0038] Therefore, this application proposes a control system, method, and semiconductor process equipment for magnetrons to improve deposition uniformity and target utilization.

[0039] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0040] Figure 4 A schematic diagram (bottom view) of a magnetron control system provided for one embodiment of this application. Figure 4 As shown, the control system of the magnetron in this embodiment of the application may specifically include: a first rotating shaft 41, a first motor ( Figure 4 (Not shown in the image), first rotating arm 43, first counterweight 44, second rotating shaft 42, second motor ( Figure 4 (Not shown in the image), second rotating arm 45, second counterweight 46, magnetron 47 and controller ( Figure 4 (Not shown in the image). Wherein:

[0041] One end of the first rotating shaft 41 is connected to the first motor, the other end of the first rotating shaft 41 is connected to the first rotating arm 43, and one end of the first rotating arm 43 is connected to the first counterweight 44.

[0042] One end of the second rotating shaft 42 is connected to the second motor, and the other end of the second rotating shaft 42 is connected to the other end of the first rotating arm 43 and the second rotating arm 45. One end of the second rotating arm 45 is connected to the magnetron 47, and the other end of the second rotating arm 45 is connected to the second counterweight 46.

[0043] When the first motor rotates, it provides power to the first rotating shaft 41 and drives the first rotating arm 43, the first counterweight 44, the second rotating arm 45, the second counterweight 46 and the magnetron 47 to rotate around the first rotating shaft 41.

[0044] When the second motor rotates, it provides power to the second rotating shaft 42 and drives the second rotating arm 45, the second counterweight 46 and the magnetron 47 to rotate around the second rotating shaft 42.

[0045] The first counterweight 46 and the second counterweight 44 are used to balance the entire mechanical structure, eliminate imbalances caused by unequal torques, and increase rotational stability.

[0046] The controller is used to: determine the process time of a single process. t dep The number of revolutions of the first rotating arm 43 in one process. n Determine the first speed of the first motor. ω 1 and the second speed of the second motor ω 2. And control the first motor to operate at the first speed. ω 1. Rotate so that the first rotating arm 43 rotates during the process time. t dep The inner rotation completes a full revolution, and the second motor is controlled at the second speed. ω 2. Rotate so that the second rotating arm 45 is in the process time t dep The inner relative to the first rotating arm is an integer multiple of 43 half-turns.

[0047] Specifically, this application embodiment adopts a dual-motor magnetron control scheme. Two motors (the first motor and the second motor) control the first rotating arm 43 and the second rotating arm 45 of the magnetron at independent rotational speeds (first rotational shaft 41 and second rotational shaft 42) via their respective rotating shafts. ω 1 and second speed ω 2) Rotate.

[0048] Let the angles between the first rotating arm 43 and the second rotating arm 45 and the horizontal direction be respectively...θ 1 and θ 2, by Figure 4 It can be seen that when At that time, magnetron 47 is located in the outermost ring, when At that time, magnetron 47 is located in the innermost circle.

[0049] To achieve uniform film deposition and avoid eccentricity, and to maximize target utilization, the magnetron trajectory is mathematically analyzed to determine what characteristics of the trajectory can achieve full target corrosion and uniform deposition.

[0050] Let the angles by which the first rotating arm 43 and the second rotating arm 45 rotate during the entire process be Δ. θ 1 and △ θ 2.

[0051] The rotation angle △ of the first rotating arm 43 θ 1 is a crucial parameter for controlling whether the process results are skewed. Assume that at the start of the process, the first rotating arm 43 is located... θ The position where 1 = 0. Only when Only then can the first rotating arm 43 return to its initial position at the end of the process. If △ θ 1 slightly less If this happens, a thinner region will appear during film deposition, such as... Figure 5 The light-colored area is shown; if △ θ 1 slightly greater than In this case, a relatively thick region will appear during film deposition, such as... Figure 6 The dark area is shown. Figure 5 , Figure 6 Both scenarios shown lead to deposition misalignment. Therefore, to achieve full target corrosion and uniform deposition, it is necessary to ensure Δ θ 1 is an integer multiple of 2π, meaning that in the process time... t dep The inner first rotating arm completes 43 revolutions.

[0052] The difference in rotation angle between the first rotating arm 43 and the second rotating arm 45 is △ θ 1-△ θ 2 is a crucial parameter for controlling whether the inner and outer rings are uniform in the process results. Assume that at the start of the process, the second rotating arm 45 is located... θ 1= θ Position 2, meaning magnetron 47 is located on the outermost ring. Unlike the first rotating arm 43, the second rotating arm 45 only needs to be in position 2. This allows for uniform coverage of the inner and outer rings, such as from the outer ring to the inner ring, or from the outer ring to the inner ring and back to the outer ring. In both cases, the magnetron achieves coverage in the radial direction, thus achieving uniform coverage in the radial direction. However, considering the requirements of continuous processes, it is best for the magnetron 47 to return to its initial radial position at the end of the process to save process time. Therefore, it is necessary to ensure... That is, during the process time t dep The inner second rotating arm 45 rotates a full revolution relative to the first rotating arm 43. If △ θ 1-△ θ If 2 is an integer multiple of 2π that is slightly less than 2π, then a relatively thin region will appear near the outer edge during film deposition, such as... Figure 7 The light-colored area is shown; if △ θ 1-△ θ If 2 is an integer multiple of 2π, then a relatively thick region will appear near the outer edge during film deposition, such as... Figure 8 The dark area is shown. Figure 7 , Figure 8 Both of the situations shown will lead to uneven deposition between the inner and outer rings.

[0053] Furthermore, the controller can be specifically used to: based on process time t dep and the preset target speed ω 0 (e.g., 90 revolutions / minute, or 1.5 revolutions / second, 3π radians / second (rad / s) commonly used in the process), determine the number of revolutions the first rotating arm 43 makes in one process. n .

[0054] As one feasible implementation, the controller is specifically used to: calculate process time. t dep and target speed ω The product of 0 For product values Rounding down to the nearest integer, we obtain the number of revolutions the first rotating arm makes in one cycle. n .

[0055] The following two formulas describe the rotation angle of the first rotating arm 43. The difference in rotation angle between the first rotating arm 43 and the second rotating arm 45 , n We will discuss the possible values ​​of .

[0056] For the formula: the rotation angle of the first rotating arm 43 , n The value of determines the number of revolutions the first rotating arm 43 makes in one process; therefore, it can be considered that the average rotational speed of the first rotating arm 43 is directly determined by .n Control is implemented. The process time for one cycle is... t dep (Unit: seconds (s)) If you want to increase the rotational speed of the first rotating arm 43 (i.e., the first rotational speed) ω 1) Set as commonly used in the process ω 0 = approximately 90 revolutions per minute (i.e., 1.5 revolutions per second, or 3π rad / s), then let... n Equals 1.5 t dep The result of rounding to the nearest integer.

[0057] For the formula: the difference in rotation angle between the first rotating arm 43 and the second rotating arm 45 , n The value of determines the number of times the magnetron 47 enters and exits the inner and outer rings in one process, such as n =1 indicates that the magnetron 47 rotates from the outer ring to the inner ring and then back to the outer ring. In actual processes, the magnetron 47 can complete the uniform deposition of the inner and outer rings in one pass, without the need for multiple passes, and at this time Δ θ 1 and △ θ The difference △ of 2 θ 1-△ θ The minimum value of 2 can better prevent the first rotating arm 43 or the second rotating arm 45 from rotating too fast. Therefore, in this embodiment, Δ can be set to a minimum. θ 1-△ θ 2 = 2π.

[0058] Furthermore, the rotational speed of the first rotating arm 43 is the first rotational speed. ω 1 can be a fixed rotation speed.

[0059] Correspondingly, the controller can be specifically used to: determine the number of revolutions the first rotating arm 43 makes in one process. n Calculate the total angle of rotation of the first rotating arm 43 in one process. (Unit: rad); Calculate the total angle of rotation of the first rotating arm 43 in one process. With process time t dep Quotient (unit: s) The first rotational speed was obtained. ω 1 (unit: rad / s).

[0060] The above discussion determined the rotation angle Δ of the first rotating arm 43. θ The basic characteristics of 1 are , n This refers to the number of revolutions the first rotating arm 43 makes in one process. Based on this, the rotational speed of the first rotating arm 43 (i.e., the first rotational speed) will be further discussed. ω1) Basic characteristics.

[0061] For the rotational speed of the first rotating arm 43 (i.e., the first rotational speed) ω 1) Considering different θ In case 1, the same △ θ 1. The area swept is the same, such as Figure 9 , Figure 10 As shown in the dark area, Figure 9 middle θ 1=0, Figure 10 middle θ 1 = π / 4.

[0062] Therefore, in the process, the first rotating arm 43 only needs to rotate at a constant speed to achieve uniform deposition and full target corrosion. Let the process time for one operation be... t dep (Unit: s), the number of revolutions of the first rotating arm 43 in one process is: n The average rotational speed of the first rotating arm 43 is controlled to be approximately 90 revolutions per minute (i.e., 1.5 revolutions per second, or 3π rad / s). n Equals 1.5 t dep The rounding result yields the rotational speed of the first rotating arm 43 (i.e., the first rotational speed). ω 1. The expression for (unit: rad / s) is:

[0063]

[0064] Furthermore, the rotational speed of the second rotating arm 45 is the second rotational speed. ω 2 can be a variable speed, that is, it changes with time. t changing rotation speed ω 2 ( t Specifically, it can be over time. t Nonlinearly changing rotational speed or time t Segmented rotational speed.

[0065] Correspondingly, the controller can be specifically used to: based on process time t dep Determine the first rotational speed ω 1 and second speed ω 2 ( t The difference function interpolation function For time t A changing symmetric function; calculate the first rotational speed. ω 1 and difference function The difference The second rotational speed is obtained. ω 2 ( t ).

[0066] Among them, the difference function It can be a one-dimensional axisymmetric function composed of nonlinear functions (such as Gaussian functions) or piecewise linear functions, and a difference function. The axis of symmetry is the process time. t dep The midpoint.

[0067] The above discussion established that the basic characteristic of the difference in rotation angle between the first rotating arm 43 and the second rotating arm 45 is Δ. θ 1-△ θ 2 = 2π. Based on this, we will further discuss the rotational speed of the second rotating arm 45 (i.e., the second rotational speed). ω 2) Basic characteristics.

[0068] For the rotational speed of the second rotating arm 45 (i.e., the second rotational speed) ω 2) Considering different θ 1- θ In case 2, the same △ θ 1-△ θ The areas scanned by the two are quite different, such as Figure 11 , Figure 12 As shown in the dark area, Figure 11 middle θ 1- θ 2=0, Figure 12 middle θ 1- θ 2 = 3π / 4.

[0069] Therefore, the second rotating arm 45 cannot rotate at a constant speed; its rotational speed... ω 2 ( t It must be a time-varying process. t Only a changing function can achieve uniform deposition and full target etching in a single process. Considering Δ θ 1-△ θ 2 = 2π, therefore the following difference function is constructed. :

[0070]

[0071] interpolation function The following conditions must be met:

[0072]

[0073] The following analysis focuses on the difference function. Its characteristics.

[0074] when t =0 and t = t depAt this time, not only are the first rotating arm 43 and the second rotating arm 45 required to be in a straight position, but it is also best to make the rotation speed of the two arms the same to facilitate continuous processing. Therefore, the following expression is obtained:

[0075]

[0076] Furthermore, since the motion logic of the magnetron 47 is from the outer ring to the inner ring first, and then from the inner ring back to the outer ring, therefore, in the process time... t dep Inside, the rotational speed of the second rotating arm 45 ω 2 ( t That is, the second rotational speed ω 2 ( t Relative to process time t dep The midpoint is symmetrical, that is, the rotational speed of the second rotating arm 45. ω 2 ( t It should be a... t dep / 2 is a symmetric function of the axis of symmetry; similarly, the difference function... It should also be a t dep / 2 is a symmetry function of the axis of symmetry. For both sides... The most obvious symmetric function is a variant of the Gaussian function, therefore the difference function... The basic form is defined as:

[0077]

[0078] in, e It is a natural constant. a i , b i and c i These are the fitting coefficients. The fitting coefficients can be determined using an iterative method. a i , b i and c i The specific process can be as follows: Figure 13 As shown, it includes the following steps:

[0079] S1301, Initialize the fitting coefficients of the difference function.

[0080] S1302, the candidate difference speed is calculated based on the difference function.

[0081] S1303 calculates the magnetron trajectory based on the candidate difference rotational speed.

[0082] S1304, calculate the corrosion probability curves of the target material at different radii based on the trajectory of the magnetron.

[0083] S1305, If the corrosion probability curve does not meet the uniformity requirement, adjust the fitting coefficient according to the corrosion probability curve. Return to step S1302.

[0084] S1306, under the condition that the corrosion probability curve meets the uniformity requirement, the difference function with well-determined fitting coefficients is obtained based on the final fitting coefficients.

[0085] The difference function can be determined using the method described above. The specific expression is:

[0086]

[0087] in, The normalization coefficient is as follows:

[0088]

[0089] Therefore, the second rotational speed is obtained. ω 2 ( t The specific expression for ) is:

[0090]

[0091] Figure 14 From left to right, these represent the total process time. t dep The rotational speed of the first rotating arm 43 at times of 8.5s, 12s, and 17s. ω 1 (shown by dashed lines) and the rotational speed of the second rotating arm 45 ω 2. Schematic diagram of the change over time (shown by solid line). The horizontal axis represents time t (in seconds), and the vertical axis represents rotational speed (in rad / s). Figure 14 It can be seen that when the magnetron moves from the outer ring to the inner ring of the target, the second rotational speed... ω 2. First, it decreases as the radius decreases, then it increases as the radius decreases again, and then it decreases as the radius decreases again; when the magnetron moves from the inner ring to the outer ring of the target material, the second rotational speed... ω 2. It first increases with increasing radius, then decreases with increasing radius, then increases again with increasing radius, and this occurs during the process time. t dep Inside, second speed ω 2 ( t Relative to process time t dep The midpoint is symmetrical.

[0092] Figure 15 From left to right, these represent the total process time. tdep This is a schematic diagram of the trajectory of magnetron 15 at 8.5s, 12s, and 17s. Figure 15 It can be seen that the trajectory of the magnetron 47 in this embodiment can adapt to the process time. t dep Adjustments are made, so this trajectory can be called an Adaptive Dynamic Motion (ADM) trajectory.

[0093] Figure 16 This is a step-by-step illustration of the adaptive dynamic motion trajectory in an embodiment of this application when the process time is 12s. The arrows represent the first 2s, first 4s, first 6s, first 8s, first 10s, and the complete trajectory. Figure 16 It can be seen that magnetron 47 first gradually rotates from the outer ring to the inner ring, then gradually rotates from the inner ring to the outer ring, and finally returns to the starting point.

[0094] Figure 17 This is a comparative diagram of the adaptive dynamic motion trajectory of this application embodiment and the planetary motion trajectory in related technologies. Figure 17 It can be seen that the trajectory of the magnetron 47 in this embodiment is more uniformly distributed.

[0095] The corrosion probability curves at different target radii in the embodiments of this application and related technologies can be calculated from the above trajectories. For example... Figure 18 As shown, the three-dimensional corrosion probability diagrams at different target radii are compared to, for example... Figure 19 , Figure 20 As shown. By Figure 18 , Figure 19 , Figure 20 It is known that the corrosion probability curve formed by the adaptive dynamic motion trajectory in this embodiment is more uniform. In contrast, the planetary motion trajectory in related technologies, due to its slow rotation speed in the inner circle, fast rotation speed in the middle circle, and slow rotation speed in the outer circle, results in lower target utilization in the middle circle. Figure 18 The corrosion probability curve can roughly estimate the target material's limit utilization rate: the adaptive dynamic motion trajectory of this application embodiment is 74.9%, while the planetary motion trajectory in related technologies is 66.3%. It can be seen that using the adaptive dynamic motion trajectory of this application embodiment will result in a higher target material utilization rate.

[0096] Figure 21 , Figure 22 This diagram illustrates a comparison of thin film resistivity (Rs) measurements under different trajectories in embodiments of this application and related technologies. According to the diagram, Rs gradually increases from blue to red. Figure 21 , Figure 22 It can be seen that the adaptive dynamic motion trajectory of this application embodiment can adapt to the process time. tdep This allows for full-circle rotation, with an average Rs value (Avg) of 0.752 and a uniformity (1Sig) of 0.984% (standard deviation of Rs / average Rs). The uniformity (1Sig) is relatively low. Using the adaptive dynamic motion trajectory of this application embodiment, uniform deposition can be achieved without deposition eccentricity. In contrast, the planetary motion trajectory in related technologies does not have full-circle rotation, with an average Rs value (Avg) of 0.758 and a uniformity (1Sig) of 5.042%. The uniformity (1Sig) is relatively high, and deposition eccentricity may occur when using the planetary motion trajectory for process times that are not integer multiples of the cycle.

[0097] In summary, in the magnetron control system of this application embodiment, the first rotating arm and the second rotating arm rotate at independent first and second rotation speeds. By precisely controlling the first and second rotation speeds, the first rotating arm can complete a full revolution within the process time, thus avoiding deposition eccentricity. Furthermore, the second rotating arm can rotate an integer multiple of half a revolution relative to the first rotating arm within the process time. This means the magnetron's trajectory can move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring the uniformity of deposition between the inner and outer rings of the target material. Correspondingly, deposition uniformity is guaranteed, thus ensuring target material utilization. When the second rotating arm completes a full revolution relative to the first rotating arm within the control process time, the magnetron's trajectory can also move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring process continuity. Additionally, the rotation speed of the second rotating arm (i.e., the second rotation speed) changes over time, making the magnetron's trajectory an adaptive dynamic motion trajectory, resulting in a more uniform corrosion probability curve, further ensuring target material utilization.

[0098] Based on the magnetron control system of the above embodiments, this application also provides a magnetron control method. For example... Figure 23 As shown, the control method of the magnetron in this application embodiment is applied to the controller in the control system of the magnetron in any of the above embodiments. The control method of the magnetron may specifically include the following steps:

[0099] S2301, based on the process time of one process and the number of revolutions of the first rotating arm in one process, determine the first speed of the first motor and the second speed of the second motor.

[0100] S2302, control the first motor to rotate at a first speed so that the first rotating arm rotates a full circle within the process time, and control the second motor to rotate at a second speed so that the second rotating arm rotates an integer multiple of half a circle relative to the first rotating arm within the process time.

[0101] It should be noted that the specific process of the control method of the magnetron in this application embodiment can be found in the relevant description in the above-mentioned control system embodiment of the magnetron, and will not be repeated here.

[0102] The magnetron control method of this application embodiment involves a first rotating arm and a second rotating arm rotating at independent first and second rotation speeds. Precise control of these speeds allows the first rotating arm to complete a full revolution within the process time, avoiding deposition eccentricity. Furthermore, the second rotating arm can rotate an integer multiple of half a revolution relative to the first rotating arm within the process time. This means the magnetron's trajectory can move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring uniform deposition between the inner and outer rings of the target material. Correspondingly, deposition uniformity is guaranteed, thus ensuring target material utilization. When the second rotating arm completes a full revolution relative to the first rotating arm within the process time, the magnetron's trajectory can also move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring process continuity. Additionally, the rotation speed of the second rotating arm (i.e., the second rotation speed) changes over time, making the magnetron's trajectory an adaptive dynamic motion trajectory, resulting in a more uniform corrosion probability curve, further ensuring target material utilization.

[0103] This application also provides a semiconductor process apparatus. For example... Figure 4 As shown, the semiconductor process equipment may include: a first rotating shaft 41, a first motor ( Figure 4 (not shown in the image), first rotating arm 43, second rotating shaft 42, second motor ( Figure 4 (not shown in the image), second rotating arm 45, magnetron 47 and controller ( Figure 4 (Not shown in the diagram), the controller is located in the host computer and / or the slave computer. The controller includes at least one processor and at least one memory. The memory stores a computer program. When the computer program is executed by the processor, it implements the steps of any of the above-described magnetron control method embodiments.

[0104] In the semiconductor process equipment of this application embodiment, the first rotating arm and the second rotating arm rotate at independent first and second rotation speeds. By precisely controlling the first and second rotation speeds, the first rotating arm can complete a full revolution within the process time, thereby avoiding deposition eccentricity. Furthermore, the second rotating arm can rotate an integer multiple of half a revolution relative to the first rotating arm within the process time. This means the magnetron's trajectory can move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring the deposition uniformity of the inner and outer rings of the target material. Correspondingly, deposition uniformity is guaranteed, thus ensuring target material utilization. When the second rotating arm completes a full revolution relative to the first rotating arm within the process time, the magnetron's trajectory can also move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring process continuity. Additionally, the rotation speed of the second rotating arm (i.e., the second rotation speed) changes over time, making the magnetron's trajectory an adaptive dynamic motion trajectory, resulting in a more uniform corrosion probability curve, thus further ensuring target material utilization.

[0105] This application also proposes a readable storage medium storing one or more computer programs, the one or more computer programs including instructions. When the program or instructions are executed by a processor in a semiconductor process apparatus including multiple applications, the processor in the semiconductor process apparatus is able to execute the various processes of the above-described magnetron control method embodiments and specifically execute the steps of any of the above-described magnetron control method embodiments.

[0106] In the readable storage medium of this application embodiment, the first rotating arm and the second rotating arm rotate at independent first and second rotation speeds. By precisely controlling the first and second rotation speeds, the first rotating arm can complete a full revolution within the process time, thereby avoiding deposition eccentricity. Furthermore, the second rotating arm can rotate an integer multiple of half a revolution relative to the first rotating arm within the process time. This means the magnetron's trajectory can move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring the deposition uniformity of the inner and outer rings of the target material. Correspondingly, deposition uniformity is guaranteed, thus ensuring target material utilization. When the second rotating arm completes a full revolution relative to the first rotating arm within the process time, the magnetron's trajectory can also move from the outer ring to the inner ring and back to the outer ring, or vice versa, ensuring process continuity. Additionally, the rotation speed of the second rotating arm (i.e., the second rotation speed) changes over time, making the magnetron's trajectory an adaptive dynamic motion trajectory, resulting in a more uniform corrosion probability curve, thus further ensuring target material utilization.

[0107] The systems, devices, modules, or units described in the above embodiments can be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, a computer can be, for example, a personal computer, laptop computer, cellular phone, camera phone, smartphone, personal digital assistant, media player, navigation device, email device, game console, tablet computer, wearable device, or any combination of these devices.

[0108] For ease of description, the above devices are described separately by function as various units. Of course, in implementing this application, the functions of each unit can be implemented in one or more software and / or hardware.

[0109] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0110] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0111] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0112] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of action steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0113] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0114] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0115] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0116] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0117] This application can be described in the general context of computer-executable instructions, such as program modules, that are executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform a specific task or implement a specific abstract data type. This application can also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0118] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments.

[0119] The above are merely embodiments of this application and are not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A control system for a magnetron, characterized in that, include: A first rotating shaft, one end of which is connected to a first motor, and the other end of which is connected to a first rotating arm; A second rotating shaft, one end of which is connected to a second motor, and the other end of which is connected to one end of the first rotating arm and the second rotating arm respectively. One end of the second rotating arm is connected to a magnetron. When the first motor rotates, it drives the first rotating arm, the second rotating arm, and the magnetron to rotate around the first rotating axis. When the second motor rotates, it drives the second rotating arm and the magnetron to rotate around the second rotating axis, respectively. The controller is configured to determine a first speed of the first motor and a second speed of the second motor based on the process time of a single process and the number of revolutions of the first rotating arm in a single process, and to control the first motor to rotate at the first speed so that the first rotating arm rotates a full revolution within the process time, and to control the second motor to rotate at the second speed so that the second rotating arm rotates an integer multiple of half a revolution relative to the first rotating arm within the process time.

2. The control system according to claim 1, characterized in that, The controller is specifically used for: Based on the process time and the preset target rotation speed, the number of rotations of the first rotating arm in one process is determined.

3. The control system according to claim 2, characterized in that, The controller is specifically used for: Calculate the product of the process time and the target rotation speed to obtain the number of revolutions the first rotating arm makes in one process.

4. The control system according to claim 1, characterized in that, The first rotational speed is a fixed rotational speed.

5. The control system according to claim 4, characterized in that, The controller is specifically used for: Calculate the total angle of rotation of the first rotating arm in one process based on the number of rotations of the first rotating arm in one process. The first rotational speed is obtained by calculating the quotient of the total angle of rotation of the first rotating arm in one process and the process time.

6. The control system according to claim 1, characterized in that, The second speed is a variable speed.

7. The control system according to claim 1, characterized in that, When the magnetron moves from the outer ring to the inner ring of the target material, the second rotational speed first decreases as the radius decreases, then increases as the radius decreases, and then decreases as the radius decreases again.

8. The control system according to claim 1, characterized in that, When the magnetron moves from the inner ring to the outer ring of the target material, the second rotational speed first increases with the increase of the radius, then decreases with the increase of the radius, and then increases with the increase of the radius again.

9. The control system according to claim 1, characterized in that, During the process time, the second rotational speed is symmetrical with respect to the midpoint of the process time.

10. The control system according to any one of claims 7-9, characterized in that, The controller is specifically used for: The difference function between the first rotational speed and the second rotational speed is determined based on the process time, and the difference function is a symmetric function that changes with time; The second rotational speed is obtained by calculating the difference between the first rotational speed and the difference function.

11. The control system according to claim 10, characterized in that, The controller is specifically used for: Initialize the fitting coefficients of the difference function; Based on the difference function, the candidate difference rotational speed is calculated; The trajectory of the magnetron is calculated based on the candidate difference rotational speed. The corrosion probability curves at different radii of the target material are calculated based on the trajectory of the magnetron. If the corrosion probability curve does not meet the uniformity requirement, the fitting coefficient is adjusted according to the corrosion probability curve, and the process returns to the step of calculating the candidate difference rotation speed according to the difference function. If the corrosion probability curve meets the uniformity requirement, the difference function is obtained based on the final fitting coefficient.

12. The control system according to claim 10, characterized in that, The difference function is a one-dimensional axisymmetric function composed of a Gaussian function or a piecewise linear function, and the axis of symmetry of the difference function is the midpoint of the process time.

13. A method for controlling a magnetron, characterized in that, In a controller applied to a magnetron control system, the magnetron control system includes: a first rotating shaft, one end of which is connected to a first motor, and the other end of which is connected to a first rotating arm; a second rotating shaft, one end of which is connected to a second motor, and the other end of which is connected to one end of the first rotating arm and a second rotating arm, respectively; one end of the second rotating arm is connected to the magnetron; when the first motor rotates, it drives the first rotating arm, the second rotating arm, and the magnetron to rotate around the first rotating shaft; when the second motor rotates, it drives the second rotating arm and the magnetron to rotate around the second rotating shaft. The control method includes: Based on the process time of one process and the number of revolutions of the first rotating arm in one process, determine the first speed of the first motor and the second speed of the second motor; The first motor is controlled to rotate at the first speed so that the first rotating arm completes a full rotation within the process time, and the second motor is controlled to rotate at the second speed so that the second rotating arm rotates an integer multiple of half a rotation relative to the first rotating arm within the process time.

14. A semiconductor process apparatus, characterized in that, include: The method comprises a magnetron, a first rotating shaft, a first motor, a first rotating arm, a second rotating arm, a second rotating shaft, a second motor, and a controller. The controller includes at least one processor and at least one memory, in which a computer program is stored. When the computer program is executed by the processor, it implements the steps of the method as described in claim 13.

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