Photosensitive resin composition, photosensitive cured film, method for producing same, and electronic device

Abstract

The invention provides a photosensitive resin composition, a photosensitive cured film, a preparation method of the photosensitive cured film and an electronic device. The photosensitive resin composition comprises polyimide precursor resin, a photoinitiator, a thermal base generator, a polymerizable compound with an amic acid structure and a bridging agent. By adding the thermal base generator, the polymerizable compound with the amic acid structure and the bridging agent into the photosensitive resin composition, the polyimide precursor resin can form a cured film at a relatively low curing temperature through the interaction among the substances; and the copper alloy still has good mechanical property, tightness and reliability of combination with a copper surface, thermal stability and chemical corrosion resistance, so that the comprehensive performance of the copper alloy is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor materials technology, and in particular to a photosensitive resin composition, a photosensitive curable film, a method for preparing the same, and electronic components. Background Technology

[0002] Photosensitive polyimide (PSPI) materials are widely used for surface passivation of integrated circuit chips and surface redistribution in wafer-level packaging and panel-level packaging, making them an indispensable key material in advanced wafer-level packaging processes. Traditional PSPI materials often require curing temperatures above 350°C to achieve their various superior properties. However, at such high curing temperatures, wafer warpage, stress cracking, and compatibility issues with other packaging materials can easily occur in advanced packaging processes such as high-density fan-out wafer-level packaging. Therefore, there is a demand for lower curing temperatures for PSPI. Low-temperature curing PSPI materials often suffer from insufficient imidization, resulting in poor mechanical properties and chemical corrosion resistance, thus failing to meet packaging process requirements. Furthermore, they exhibit poor adhesion to other materials in the packaging process, especially electroplated copper, leading to poor device reliability. High-end wafer-level packaging processes place even higher demands on low-stress, low-warpage curing processes, making the need for ultra-low temperature curing PSPI materials (below 200°C) increasingly urgent. Summary of the Invention

[0003] In view of this, this application provides a photosensitive resin composition, a photosensitive curable film, a method for preparing the same, and an electronic component, aiming to improve the problems of poor mechanical properties, poor chemical corrosion resistance, and poor adhesion to copper in low-temperature curable photosensitive polyimide materials.

[0004] In a first aspect, embodiments of this application provide a photosensitive resin composition. A photosensitive resin composition comprising a polyimide precursor resin, a photoinitiator, a thermal alkali-generating agent, a polymerizable compound having an ammonium acid structure, and a crosslinking agent. In one embodiment, the structural formula of the thermal alkali-producing agent is as follows: , Among them, R6, R7, R8, R9, R 10 R 11 R 12 R 13 R 14 All of them are monovalent organic groups.

[0005] In one embodiment, the anion of the thermal alkali-generating agent includes p-toluenesulfonate ions; and / or The cation of the heat-generating alkali agent includes one or more of 1,8-diazabicycloundec-7-ene ion and 1,5-diazabicyclo[4.3.0]-5-nonene ion.

[0006] In one embodiment, the polyimide precursor resin has the following structural formula: , Wherein, X is a tetravalent organic group containing an aromatic group, Y is a divalent organic group containing an aromatic group, n is 2~150, and R1 and R2 each independently include the monovalent organic group shown in formula (1): Equation (1): , Among them, R3, R4 and R5 are independently hydrogen atoms, alkyl groups with 1 to 3 carbon atoms, and m is 2 to 10.

[0007] In one embodiment, the X structural unit is The Y-structure unit is , , and One or more of the following, where * indicates a connection point; and / or The X structural unit is The Y-structure unit is and One or more of the following, where m is an integer between 0 and 5, Z2 and Z3 each time they appear, are independently one of an organic group with 1 to 10 carbon atoms and containing fluorine atoms but not heteroatoms other than fluorine, an oxygen atom or a sulfur atom, and * indicates a connection site.

[0008] In one embodiment, the polymeric compound has the following structural formula:

[0009] Among them, R 15 Including one or more of aromatic and aliphatic groups, R 16 R 17 R 18 Each is independently an alkyl group with 1 to 3 carbon atoms, and Z is a tetravalent organic group containing an aromatic group.

[0010] In one embodiment, the photoinitiator comprises one or more of the following: oxime ester compound, benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)butanone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-1-propanone, alkyl anthraquinone, benzoin alkyl ether, benzoin, alkylbenzoin, and benzoinyl dimethyl ketal; and / or The crosslinking agent includes one or more of hexamethoxymethyl melamine, tetra(methoxy)glycosidic urea, 4,4',4''-(ethane-1,1,1-triyl)tris(2,6-bis(methoxymethyl)phenol), and 3,3',5,5'-tetramethoxymethylbiphenyl.

[0011] In one embodiment, the mass ratio of the polyimide precursor resin, the photoinitiator, the thermal alkali-generating agent, the polymerizable compound, and the crosslinking agent is 100:(0.5-6):(0.1-5):(1-20):(1-15).

[0012] In one embodiment, the photosensitive resin composition further includes a silane coupling agent; The photosensitive resin composition also includes a metal interface bonding agent; The photosensitive resin composition also includes an antioxidant; The photosensitive resin composition further includes a polymerization inhibitor; The photosensitive resin composition also includes a solvent.

[0013] In one embodiment, the silane coupling agent comprises ureapropyltriethoxysilane; and / or The mass ratio of the polyimide precursor resin to the silane coupling agent is 100:(0.5-6); and / or The metal interface bonding aid comprises one or more of 3-amino-1,2,4-triazole, 5-aminotetrazole, 3,5-diamino-1,2,4-triazole, and 1,5-diaminotetrazole; and / or The mass ratio of the polyimide precursor resin to the metal interface bonding agent is 100:(0.1-5); and / or The antioxidant comprises one or more of 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid, 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, and 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid; and / or The mass ratio of the polyimide precursor resin to the antioxidant is 100:(0.5-4); and / or The polymerization inhibitor comprises one or more of 2-nitroso-1-naphthol, p-benzoquinone, and p-hydroxyanisole; and / or The mass ratio of the polyimide precursor resin to the polymerization inhibitor is 100:(0.01-1); and / or The solvent includes one or more of N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, N,N-dimethylformamide, and N,N-dimethylacetamide; and / or The mass ratio of the polyimide precursor resin to the solvent is 100:(100-300).

[0014] Secondly, embodiments of this application provide a photosensitive curable film formed by curing the above-described photosensitive resin composition.

[0015] The thickness of the photosensitive curing film is 2μm-40μm.

[0016] Thirdly, embodiments of this application provide a method for preparing a photosensitive curable film, comprising the following steps: The above-mentioned photosensitive resin composition is subjected to film-forming treatment to obtain a photosensitive cured film.

[0017] In one embodiment, the film-forming process includes: depositing the photosensitive resin composition on a substrate to form a wet film, followed by pre-baking and heat curing.

[0018] In one embodiment, the heat curing temperature is 180℃-400℃, and the pre-baking temperature and time are 90℃-130℃ and 100s-600s, respectively; and / or The process after pre-baking and before heating and curing further includes forming a photolithographic pattern on the pre-baked wet film.

[0019] Fourthly, embodiments of this application provide an electronic component comprising the above-described photosensitive curing film or a photosensitive curing film prepared by the above-described method.

[0020] In the embodiments of this application, by adding a heat-generating alkali agent, a polymerizable compound with an amic acid structure, and a crosslinking agent to the photosensitive resin composition, the interaction between these substances allows the cured film formed by the polyimide precursor resin at a lower curing temperature to still possess good mechanical properties, tight and reliable bonding with the copper surface, thermal stability, and chemical corrosion resistance, thereby improving its overall performance. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1This is the structural formula of the heat-generating alkali agent provided in the embodiments of this application; Figure 2 This is the structural formula of the polyimide precursor resin provided in the embodiments of this application; Figure 3 This is the structural formula of the polymeric compound used in the embodiments of this application. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0025] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0026] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0027] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0028] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0029] The technical solution of this application is as follows: In a first aspect, embodiments of this application provide a photosensitive resin composition comprising a polyimide precursor resin, a photoinitiator, a thermal alkali-generating agent, a polymerizable compound having an amic acid structure, and a crosslinking agent.

[0030] In this application, by adding a thermally generating alkali agent, a polymerizable compound with an amic acid structure, and a bridging agent to a photosensitive resin composition, the interaction between these substances allows the cured film formed at a lower curing temperature to still possess good mechanical properties, tight and reliable bonding with the copper surface, thermal stability, and chemical corrosion resistance, thereby improving its overall performance. Consequently, the resulting photosensitive cured film can be applied to advanced packaging processes such as high-density fan-out wafer-level packaging, solving problems such as wafer warpage, stress cracking, and poor compatibility with other packaging materials that are easily caused by high-temperature curing.

[0031] In this application, the thermally generated alkali agent can release alkaline substances under heating conditions, which can promote the nucleophilic addition reaction process in the imidization reaction at a lower temperature. This allows the polyimide precursor resin to achieve a higher degree of imidization at a lower curing temperature, thereby improving the elongation at break, the tightness and reliability of the bond with the copper surface, and the chemical corrosion resistance of the cured film formed by the photosensitive resin composition at a lower curing temperature. Under the catalysis of the acidic substances generated by the thermally generated alkali agent, the crosslinking agent can undergo a crosslinking reaction on its own, or it can undergo a thermal crosslinking reaction with the hydroxyl-containing substances that are detached after imidization of the polyimide precursor resin. This ensures that the photosensitive polyimide material can still obtain excellent thermal stability and chemical stability even at very low curing temperatures. The polymeric compound contains an ammonium acid structure and unsaturated carbon-carbon double bonds, which will undergo a photocrosslinking reaction with the polyimide precursor resin during the curing process, which can further improve the mechanical properties, thermal stability, and chemical stability of the cured film.

[0032] In some embodiments, the structural formula of the thermal alkali-producing agent is as follows: , Among them, R6, R7, R8, R9, R 10 R 11 R 12 R 13 R 14 All of them are monovalent organic groups.

[0033] In this application, the thermally generated alkali agent, under heating conditions, can release a strongly alkaline organic amine. This alkaline substance can promote the nucleophilic addition reaction process in the imidization reaction of the polyimide precursor resin at a lower temperature, thereby enabling the polyimide precursor resin to achieve a higher degree of imidization at a lower curing temperature. This improves the elongation at break, the tightness and reliability of the bond with the copper surface, and the chemical corrosion resistance of the cured film formed by the photosensitive resin composition at a lower curing temperature. Consequently, the resulting photosensitive cured film can be applied to advanced packaging processes such as high-density fan-out wafer-level packaging, solving problems such as wafer warpage, stress cracking, and poor compatibility with other packaging materials that are easily caused by high-temperature curing. The thermally generated alkali agent can also release benzenesulfonic acid under heating. Under the catalysis of benzenesulfonic acid, the crosslinking agent can undergo a crosslinking reaction on its own or a thermal crosslinking reaction with the hydroxyl-containing substances detached after imidization of the polyimide precursor resin. This ensures that the photosensitive polyimide material still maintains excellent thermal stability and chemical resistance even at very low curing temperatures.

[0034] In some embodiments, R6, R7, R8, R9, R 10 R 11 R 12 R 13 R14 It can be a monovalent aliphatic alkyl group or a monovalent aromatic group.

[0035] In some embodiments, the anion of the thermal alkali-generating agent includes p-toluenesulfonate ions.

[0036] In some embodiments, the cation of the thermal alkali-generating agent includes one or more of 1,8-diazabicycloundec-7-ene ions and 1,5-diazabicyclo[4.3.0]-5-nonene ions. This allows the organic amine released by the thermal alkali-generating agent to be strongly alkaline, thereby better promoting the imidization of the polyimide precursor resin at lower temperatures.

[0037] In some embodiments, the polyimide precursor resin has the following structural formula: , Wherein, X is a tetravalent organic group containing an aromatic group, Y is a divalent organic group containing an aromatic group, R1 and R2 are both monovalent organic groups, and n is 2~150.

[0038] In some embodiments, R1 and R2 each independently comprise a monovalent organic group as shown in formula (1): Equation (1): , Among them, R3, R4 and R5 are independently hydrogen atoms, alkyl groups with 1 to 3 carbon atoms, and m is 2 to 10.

[0039] In some embodiments, the X structural unit is The Y-structure unit is , , and One or more of the following, where * indicates a connection point. This allows the polyimide precursor resin to possess good copper plating adhesion, good mechanical properties, and good thermodynamic properties.

[0040] In some embodiments, the X structural unit is The Y-structure unit is and One or more of the following, where m is an integer between 0 and 5, Z2 and Z3 each appear independently as one of the following: an organic group with 1 to 10 carbon atoms containing fluorine atoms but no heteroatoms other than fluorine, an oxygen atom, or a sulfur atom, and * indicates a connection site. In this way, the polyimide precursor resin can possess good copper plating adhesion, good mechanical properties, and thermodynamic properties.

[0041] In some embodiments, the photoinitiator includes one or more of the following: oxime ester compound, benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)butanone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-1-propanone, alkyl anthraquinone, benzoin alkyl ether, benzoin, alkylbenzoin, and benzoin dimethyl ketal.

[0042] In some embodiments, the photoinitiator includes oxime ester compounds, such as TR-PBG-305, TR-PBG-3057, TR-PBG-304, and TR-PBG-348 provided by Changzhou Qiangli Electronic New Materials Co., Ltd. This allows for better initiation of free radical crosslinking reactions between the polyimide precursor resin and the crosslinking agent, while also achieving higher deep-layer photocuring efficiency, thereby ensuring photolithography precision and a wide range of applicable film thicknesses.

[0043] In some embodiments, the polymeric compound has the following structural formula:

[0044] Among them, R 15 Including one or more of aromatic and aliphatic groups, R 16 R 17 R 18 Each of these can be independently represented by a hydrogen atom, an alkyl group with 1 to 3 carbon atoms, and Z is a tetravalent organic group containing an aromatic group.

[0045] In this application, the polymeric compound contains an ammonic acid structure and unsaturated carbon-carbon double bonds. During the curing process, an imidization reaction occurs to generate an imide ring, which can further improve the mechanical properties, thermal stability and chemical resistance of the cured film.

[0046] In some embodiments, the crosslinking agent includes one or more of amino resins and urea-formaldehyde resins.

[0047] In some embodiments, the crosslinking agent includes one or more of glycol urea resin, hydroxyethylidene urea resin, amino resin, and melamine resin.

[0048] In some embodiments, the crosslinking agent comprises one or more of hexamethoxymethyl melamine, tetra(methoxy)glycosidic urea, 4,4',4''-(ethane-1,1,1-triyl)tris(2,6-di(methoxymethyl)phenol), and 3,3',5,5'-tetramethoxymethylbiphenyl. Thus, hexamethoxymethyl melamine has multiple thermally crosslinkable groups, allowing for better thermal crosslinking with the polyimide precursor resin.

[0049] In some embodiments, the mass ratio of the polyimide precursor resin, the photoinitiator, the thermal alkali-generating agent, the polymerizable compound, and the crosslinking agent is 100:(0.5-6):(0.1-5):(1-20):(1-15), for example, 100:6:5:20:15, 100:0.5:0.1:1:1, 100:3:2.5:10:6, 100:2:3:6:10, 100:4:3:10:8, etc. The photosensitive resin composition obtained under the above ratios can achieve good photolithographic accuracy, a wide photolithographic application window, and the cured film exhibits excellent comprehensive properties such as mechanical, thermal, and chemical stability.

[0050] In this application, by combining polyimide precursor resin, photoinitiator, thermal alkali-generating agent, polymerizable compound and crosslinking agent, a photosensitive polyimide material can be provided that still achieves excellent mechanical / thermal properties, excellent adhesion and reliability to electroplated copper surfaces, and excellent chemical stability even at curing temperatures as low as 180 degrees Celsius.

[0051] In some embodiments, the photosensitive resin composition further includes a silane coupling agent.

[0052] In this application, the silane coupling agent can provide good adhesion to the polyimide material and the metal substrate, thereby improving the adhesion between the cured film formed by the photosensitive resin composition and the metal interface, especially the silicon substrate, and thus ensuring the long-term service reliability of the device using the material.

[0053] In some embodiments, the silane coupling agent includes one or more silane coupling agents containing a urea bond (-NH-CO-NH-) and an amino-specific functional group.

[0054] As an example, the silane coupling agent is selected from ureapropyltriethoxysilane, γ-aminopropyldimethoxysilane, N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-epoxypropoxypropylmethyldimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, 3-methacryloyloxypropyldimethoxymethylsilane, 3-methacryloyloxypropyltrimethoxysilane, dimethoxymethyl-3-piperidinylpropylsilane, and diethoxy-3-epoxypropoxypropylmethylsilane. One or more of the following: N-(3-diethoxymethylsilylpropyl)succinimide, N-[3-(triethoxysilyl)propyl]phthalic acid, benzophenone-3,3'-bis(N-[3-triethoxysilyl]propylamide)-4,4'-dicarboxylic acid, benzene-1,4-bis(N-[3-triethoxysilyl]propylamide)-2,5-dicarboxylic acid, 3-(triethoxysilyl)propylsuccinic anhydride, and N-phenylaminopropyltrimethoxysilane.

[0055] In some embodiments, the silane coupling agent includes ureapropyltriethoxysilane and γ-aminopropyldimethoxysilane. This can improve the substrate interfacial adhesion of the cured film formed from the photosensitive resin composition.

[0056] In some embodiments, the mass ratio of the polyimide precursor resin to the silane coupling agent is 100:(0.5-6), for example, it can be 100:1, 100:1.5, 100:2, 100:2.5, 100:3, 100:3.5, 100:6, etc.

[0057] In some embodiments, the photosensitive resin composition further includes a metal interface bonding aid. This can improve the adhesion strength between the cured film formed by the photosensitive resin composition and the metal substrate interface.

[0058] In some embodiments, the adhesive aid includes one or more azole compounds.

[0059] In some embodiments, the adhesive aid comprises one or more of 1H-triazole, 3-amino-1,2,4-triazole, 5-methyl-1H-triazole, 5-ethyl-1H-triazole, 4,5-dimethyl-1H-triazole, 5-phenyl-1H-triazole, phenyltriazole, 1,5-dimethyltriazole, 4,5-diethyl-1H-triazole, 1H-benzotriazole, hydroxyphenylbenzotriazole, tolyltriazole, 5-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, and 5-amino-1H-tetrazole and 1-methyl-1H-tetrazole.

[0060] In some embodiments, the adhesive aid includes one or more of 3-amino-1,2,4-triazole, 5-aminotetrazole, 3,5-diamino-1,2,4-triazole, and 1,5-diaminotetrazole. This can better improve the adhesion strength between the cured film formed by the photosensitive resin composition and the metal substrate interface, thereby improving the long-term service reliability of devices using this material.

[0061] In some embodiments, the mass ratio of the polyimide precursor resin to the adhesive additive is 100:(0.1-5), for example, it can be 100:0.1, 100:0.2, 100:0.4, 100:0.6, 100:0.8, 100:1.0, 100:1.5, 100:2, 100:3, 100:4, 100:5, etc.

[0062] In some embodiments, the photosensitive resin composition further includes an antioxidant. Thus, the antioxidant can delay the oxidation process of the cured film formed by the photosensitive resin composition, thereby slowing down its aging rate and extending its service life.

[0063] In some embodiments, the antioxidant includes one or more hindered phenolic antioxidants.

[0064] In some embodiments, the antioxidant includes one or more of hindered phenolic antioxidants in which the carbon atom adjacent to the phenolic hydroxyl group has a hindered structure.

[0065] As an example, the antioxidants include 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene, bis(3,5-di-tert-butyl-4-hydroxyphenylpropionyl)hydrazine, 2,2-oxamido-bis[ethyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)]propionate, and 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid. One or more of the following: 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, pentaerythritol tetrakis[β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], octadecyl β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, N,N'-hexamethylenebis(3,5-di-tert-butyl-4-hydroxyphenylpropionamide) and 2,2'-thionylethylene glycol bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate].

[0066] In some embodiments, the antioxidant comprises one or more of 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid, 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, and 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid. This can better extend the service life of the cured film formed from the photosensitive resin composition.

[0067] In some embodiments, the mass ratio of the polyimide precursor resin to the antioxidant is 100:(0.5-4), for example, it can be 100:0.5, 100:1.0, 100:1.5, 100:2.0, 100:2.5, 100:3.0, 100:3.5, 100:4.0, etc.

[0068] In some embodiments, the photosensitive resin composition further includes a polymerization inhibitor. Thus, the polymerization inhibitor can effectively mitigate the problem of poor resin stability caused by free radical crosslinking reactions between the polyimide precursor resin and the crosslinking agent during storage.

[0069] In some embodiments, the polymerization inhibitor includes one or more phenolic radical polymerization inhibitors.

[0070] As an example, the polymerization inhibitor includes one or more of hydroquinone, p-benzoquinone, N-nitrosodiphenylamine, p-tert-butylcatechol, phenothiazine, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, ethylene glycol ether diaminetetraacetic acid, 2,6-di-tert-butyl-p-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N-nitroso-N-phenylhydroxyamine ammonium salt, and N-nitroso-N(1-naphthyl)hydroxyamine ammonium salt.

[0071] In some embodiments, the polymerization inhibitor includes one or more of 2-nitroso-1-naphthol, p-benzoquinone, and p-hydroxyanisole.

[0072] In some embodiments, the mass ratio of the polyimide precursor resin to the polymerization inhibitor is 100:(0.01-1), for example, it can be 100:0.01, 100:0.05, 100:0.1, 100:0.15, 100:0.20, 100:0.25, 100:0.30, 100:0.35, 100:0.40, 100:0.45, 100:0.50, 100:1, etc.

[0073] In some embodiments, the photosensitive resin composition further includes a solvent.

[0074] In some embodiments, the solvent includes one or more of ester solvents, ether solvents, ketone solvents, aromatic hydrocarbon solvents, sulfoxide solvents, and amide solvents.

[0075] As an example, the ester solvents include one or more of ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetate, alkyl 3-alkoxypropionate, alkyl 2-alkoxypropionate, methyl 2-alkoxy-2-methylpropionate, ethyl 2-alkoxy-2-methylpropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutyrate, and ethyl 2-oxobutyrate.

[0076] As an example, the ether solvent includes one or more of diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate.

[0077] As an example, the ketone solvents include one or more of methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, and 3-heptanone; As an example, the aromatic hydrocarbon solvent includes one or more of toluene, xylene, anisole, and limonene; As an example, the amide solvent includes one or more of N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide, and N,N-dimethylformamide.

[0078] In some embodiments, the solvent includes one or more of N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, N,N-dimethylformamide, and N,N-dimethylacetamide. This improves the solubility of the components of the photosensitive resin composition and its coatability, thus facilitating film formation.

[0079] In some embodiments, the mass ratio of the polyimide precursor resin to the solvent is 100:(100-300), for example, it can be 100:100, 100:150, 100:200, 100:250, 100:300, etc.

[0080] In some embodiments, the viscosity of the photosensitive resin composition is 10 poise to 100 poise, for example, 25 poise, 26 poise, 27 poise, 28 poise, 29 poise, 30 poise, 31 poise, 32 poise, 33 poise, 34 poise, 35 poise, etc., and the viscosity is obtained by measuring a Bollerfeld cone-plate viscometer at 25°C. This allows for control of the film thickness of the photosensitive resin composition.

[0081] Secondly, embodiments of this application also provide a photosensitive curable film, which is formed by curing the above-mentioned photosensitive resin composition.

[0082] In some embodiments, the thickness of the photosensitive curing film is 2μm-40μm, for example, it can be 2μm, 4μm, 6μm, 8μm, 10μm, 15μm, 20μm, 25μm, 30μm, 40μm, etc.

[0083] Thirdly, embodiments of this application also provide a method for preparing a photosensitive curable film, comprising the following steps: The above-mentioned photosensitive resin composition is subjected to film-forming treatment to obtain a photosensitive cured film.

[0084] In some embodiments, the film-forming process includes: depositing the photosensitive resin composition on a substrate to form a wet film, followed by pre-baking and heat curing.

[0085] In this application, the photosensitive resin composition is disposed on the substrate, which can be achieved by spin coating on the substrate using a spin coater.

[0086] In some embodiments, the temperature for heat curing is 180℃-400℃, for example, it can be 180℃, 200℃, 230℃, 250℃, 280℃, 300℃, 320℃, 350℃, 375℃, 390℃, 400℃, etc., and the time for heat curing is 1.0h-6.0h, for example, it can be 1.0h, 2.0h, 2.5h, 3.0h, 3.5h, 4.0h, 5.0h, 6.0h, etc., and the heat curing is carried out in an inert gas atmosphere.

[0087] In this application, the photosensitive resin composition can be cured at 180℃-400℃ to obtain a photosensitive curable film. The photosensitive curable film has excellent elongation at break, excellent thermal properties, excellent chemical stability, and can withstand the reliability test of high temperature and high humidity while maintaining excellent adhesion to the metal interface. It can be widely used in the field of advanced semiconductor packaging, especially in the field of high-density fan-out packaging that is extremely sensitive to temperature processes and requires low stress and low warpage.

[0088] In some embodiments, the pre-baking temperature is 80℃-130℃, for example, it can be 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, 115℃, 120℃, 130℃, etc., and the pre-baking time is 100S-600S, for example, it can be 100S, 120S, 180S, 240S, 300S, 360S, 420S, 480S, 540S, 600S, etc. This removes most of the solvent from the photosensitive resin composition, which is beneficial for subsequent film formation.

[0089] In some embodiments, after the pre-baking and before the heat curing, the process further includes forming a photolithographic pattern on the pre-baked wet film.

[0090] In this application, the method for forming a photolithographic pattern is to cover the pre-baked wet film with a mask, and then expose and develop it.

[0091] Fourthly, embodiments of this application also provide an electronic component, including the aforementioned photosensitive curable film.

[0092] The electronic components in this application include, but are not limited to, semiconductor components.

[0093] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0094] Example 1 A photosensitive resin composition and its preparation method, comprising the following steps: (1) Preparation of polyimide precursor resin: 458.42g of 9,9-bis(3,4-dicarboxyphenyl)fluorene dihydric anhydride (BPAF) was dissolved in the solvent γ-butyrolactone (GBL), followed by the addition of 260.28g of hydroxyethyl methacrylate (HEMA), and then 5g of pyridine was added dropwise. After reacting at room temperature for 16h, 412.66g of dicyclohexylcarbodiimide (DCC) dissolved in GBL was added dropwise and stirred for 2h. Then, 212.64g of polyimide dissolved in GBL under a nitrogen atmosphere was added dropwise at 0-5℃. 4,4'-Diaminodiphenyl ether (ODA) was added dropwise, and the mixture was stirred at 0-5°C for 6 hours. The mixture was then raised to room temperature and reacted for another 3 hours. After the reaction was complete, 20 g of methanol was added and reacted for 2 hours. The quenched reaction mixture was then filtered. The filtrate was immediately added to methanol to precipitate a lumpy solid. The lumpy solid was refrigerated for 12 hours, dissolved in GBL, and then added dropwise to water. After filtration and drying, the polyimide precursor resin PAE-1 was obtained. (The weight-average molecular weight of this polymer was determined using ultra-high performance polymer chromatography (APC) to be: M...) w The value is 23402, and the dispersion index (PDI) is 1.77. (2) Preparation of polymerizable compound: 93.06 g ODPA was dispersed in N-methylpyrrolidone (NMP), and 30.33 g 3-(vinyloxy)prop-1-amine dissolved in NMP solvent was slowly added dropwise under ice bath. After the addition was completed, the reaction was carried out at room temperature for 10 h to obtain an NMP solution of polymerizable compound PCA-1 with a mass fraction of 20 wt%, which was stored in a 0℃ refrigerator for later use. (3) Preparation of photosensitive resin composition: Under constant temperature and humidity (24℃, 50%RH) conditions, 20g of polyimide precursor resin PAE-1, 30g of NMP solvent, 10.0g of 20wt% NMP solution of polymerizable compound PCA-1, 0.8g of photoinitiator TR-PBG-305 (manufactured by Changzhou Qiangli Electronic New Materials Co., Ltd.), 0.2g of p-toluenesulfonic acid / 1,8-diazabicycloundec-7-ene salt compound (DC-1) (CAS No.: 51376-18-2), and 1.2g of crosslinking agent (4,4',4''-(ethane-1,1,1-triyl)tris(2,6- The photosensitive resin composition was prepared by mixing 0.4 g of bis(methoxymethyl)phenol (TC-1), 0.04 g of silane coupling agent (ureapropyltriethoxysilane), 0.1 g of polymerization inhibitor (p-benzoquinone), 0.1 g of binder (3-amino-1,2,4,-triazole), and 0.1 g of antioxidant (1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid) on a shaker and dissolving it for 24 h. Then, NMP was added to make the viscosity of the solution 30 poise.

[0095] A photosensitive curable film and its preparation method, comprising the following steps: The above-mentioned photosensitive resin composition was spin-coated onto an 8-inch silicon wafer using a spin coater, and pre-baked at 100°C for 240 seconds using a hot plate to form a coating film. After applying a patterned mask to the coating, apply 400 mJ / cm². 2 The photolithographic pattern is obtained by exposing the photolithography material with energy, followed by spray development using cyclopentanone as the developer and rinsing with propylene glycol methyl ether acetate. The photolithographic pattern is then cured at 180°C for 2 hours under a nitrogen atmosphere to obtain a 10 μm thick photosensitive curing film.

[0096] Example 2 This embodiment is basically the same as Example 1, except that in this embodiment, 369.46g of 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP) is used instead of 212.64g of ODA in the preparation of the polyimide precursor resin, to obtain polyimide precursor resin PAE-2 (the weight-average molecular weight of this polymer was measured to be: M using ultra-high performance polymer chromatography). w The value is 28510, and the dispersion index (PDI) is 1.89.

[0097] Example 3 This embodiment is basically the same as Example 1, except that in this embodiment, 466.61g of 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane (HFBAPP) is used instead of 212.64g of ODA in the preparation of the polyimide precursor resin, to obtain polyimide precursor resin PAE-3 (the weight-average molecular weight of this polymer was measured to be: M using ultra-high performance polymer chromatography). w The value is 27443, and the dispersion index (PDI) is 1.95.

[0098] Example 4 This embodiment is basically the same as Example 1, except that in this embodiment, 263.10g of 1,3-bis(4-aminophenoxy)benzene (TPE-R) is used instead of 212.64g of ODA in the preparation of the polyimide precursor resin, to obtain polyimide precursor resin PAE-4 (the weight-average molecular weight of this polymer was measured to be: M using ultra-high performance polymer chromatography). w The value is 26481, and the dispersion index (PDI) is 1.81.

[0099] Example 5 This embodiment is basically the same as Example 1, except that 310.21g of 4,4'-biphenyl ether dianhydride (ODPA) and 239.74g of 5(6)-1-(4-aminophenyl)-1,3,3-trimethylindane (IDA) are used to replace 458.42g of BPAF and 212.64g of ODA in the preparation of the polyimide precursor resin, respectively, to obtain polyimide precursor resin PAE-5 (the weight-average molecular weight of the polymer was measured using an ultra-high performance polymer chromatography instrument: M). w The value is 19230, and the dispersion index (PDI) is 1.92.

[0100] Example 6 This embodiment is basically the same as Example 5, except that in this embodiment, 628.43g of bisphenol AF dianhydride (CAS No. 61778-79-8) is used to replace 310.21g of ODPA in the preparation of the polyimide precursor resin, resulting in polyimide precursor resin PAE-6 (the weight-average molecular weight of this polymer was determined using ultra-high performance polymer chromatography: M...). w The value is 21135, and the dispersion index (PDI) is 1.82.

[0101] Example 7 This embodiment is basically the same as Embodiment 5, except that in this embodiment, 336.23g of 4,4'-terephthalodioxydiphthalic anhydride (HQDPA) is used instead of 310.21g of ODPA in the preparation of the polyimide precursor resin, resulting in polyimide precursor resin PAE-7 (the weight-average molecular weight of this polymer was determined using ultra-high performance polymer chromatography: M...). w The value is 20543, and the dispersion index (PDI) is 1.79.

[0102] Example 8 This embodiment is basically the same as Embodiment 5, except that in this embodiment, 520.48g of bisphenol A type diether dianhydride (BPADA) is used instead of 310.21g of ODPA in the preparation of the polyimide precursor resin to obtain polyimide precursor resin PAE-8 (the weight-average molecular weight of this polymer was measured using an ultra-high performance polymer chromatography instrument to be: M). w The value was 19868, and the dispersion index (PDI) was 1.87.

[0103] Example 9 This embodiment is basically the same as Embodiment 1, except that the amount of 20wt% NMP solution of PCA-1 is replaced with 5.0g.

[0104] Example 10 This embodiment is basically the same as Embodiment 1, except that the amount of 20wt% NMP solution of PCA-1 is replaced with 15.0g.

[0105] Example 11 This embodiment is basically the same as Example 1, except that in this embodiment, 93.06g of ODPA in the synthesis of the polymeric compound is replaced with 88.26g of 3,3',4,4'-biphenyltetracarboxylic acid dianhydride (BPDA) to obtain a 20wt% NMP solution of the polymeric compound PCA-2.

[0106] Example 12 This embodiment is basically the same as Example 1, except that in this embodiment, 93.06g of ODPA in the synthesis of the polymeric compound is replaced with 133.27g of hexafluorodianhydride (6FDA) to obtain a 20wt% NMP solution of the polymeric compound PCA-3.

[0107] Example 13 This embodiment is basically the same as Embodiment 1, except that the number of DC-1 portions is replaced with 0.1g in this embodiment.

[0108] Example 14 This embodiment is basically the same as Embodiment 1, except that the number of DC-1 portions is replaced with 0.6g in this embodiment.

[0109] Example 15 This embodiment is basically the same as that of Embodiment 1, except that 0.2g of DC-1 is replaced with 0.2g of p-toluenesulfonic acid / 1,5-diazabicyclo[4.3.0]-5-nonene salt compound (DC-2).

[0110] Example 16 This embodiment is basically the same as Embodiment 1, except that 1.2g of crosslinking agent TC-1 is replaced with 1.2g of hexamethoxymethyl melamine (TC-2).

[0111] Example 17 This embodiment is basically the same as Embodiment 1, except that the amount of 1.2g of crosslinking agent TC-1 is replaced with 0.6g in this embodiment.

[0112] Example 18 This embodiment is basically the same as Embodiment 1, except that the amount of 1.2g of crosslinking agent TC-1 is replaced with 2.4g in this embodiment.

[0113] Example 19 This embodiment is basically the same as Example 5, except that in this embodiment, 180.21g of 4,4'-diaminodiphenyl ether (ODA) is used instead of 239.74g of 5(6)-1-(4-aminophenyl)-1,3,3-trimethylindene (IDA) in the preparation of the polyimide precursor resin, to obtain polyimide precursor resin PAE-9 (the weight average molecular weight of this polymer was measured to be: M using an ultra-high performance polymer chromatography instrument). w The value is 21540, and the dispersion index (PDI) is 1.78.

[0114] Comparative Example 1 This comparative example is basically the same as Example 1, except that the 20wt% NMP solution of 10.0g of polymeric compound PCA-1 is replaced with 2.0g of pentaerythritol tetraacrylate (PC-1).

[0115] Comparative Example 2 This comparative example is basically the same as Example 1, except that 0.2g DC-1 is replaced with 0.8g N-tert-butoxycarbonyl-4-piperidinemethanol (DC-3).

[0116] Comparative Example 3 This comparative example is basically the same as Example 1, except that 1.2g of crosslinking agent TC-1 is removed in this comparative example.

[0117] Comparative Example 4 This comparative example is basically the same as Example 1, except that 0.2g DC-1 is replaced with 0.2g 1,8-diazabicycloundec-7-ene (DC-4).

[0118] Test example: 1. Weight-average molecular weight test: The weight-average molecular weights of the polymers involved in this invention were all obtained by ultra-high performance polymer chromatography (ACQUITY APC). The relevant test conditions are as follows: the column models are ACQUITY APCXT45 1.7μm / ACQUITY APC XT200 2.5μm / ACQUITY APC XT450 2.5μm, the column oven and detector temperatures are both 40℃, the mobile phase is THF, and the flow rate is 0.5mL / min.

[0119] 2. Photolithography performance evaluation: The photosensitive curable films obtained in the examples and comparative examples were analyzed by sectioning using a focused ion beam electron microscope (FIB, Helios G4, Thermo Fisher) to evaluate their photolithographic precision and cross-sectional morphology. The photolithographic performance of the negative photosensitive resin composition was then evaluated: a photolithographic line precision of less than 10 μm was rated 'A', a photolithographic line precision of 10 μm-20 μm was rated 'B', a photolithographic line precision of 20 μm-50 μm was rated 'C', and a photolithographic line precision greater than 50 μm was rated 'D'.

[0120] 3. Mechanical and thermal tests of the cured film: The photosensitive curable films obtained in the examples and comparative examples were immersed in a 1% hydrofluoric acid aqueous solution for 10 minutes, and then peeled off from the silicon wafer to obtain film strips of 5mm*10cm. After drying the moisture in an oven at 150°C, the film strips were subjected to mechanical tensile testing using a universal tensile testing machine, and their mechanical properties were evaluated according to their elongation at break: an elongation at break greater than 50% was rated as 'A', an elongation at break between 40% and 50% was rated as 'B', an elongation at break between 20% and 40% was rated as 'C', and an elongation at break less than 20% was rated as 'D'.

[0121] The prepared film samples were tested using a dynamic thermomechanical analyzer (DMA, TA Instruments) to obtain modulus-temperature curves and glass transition temperatures, thereby evaluating their thermal properties: glass transition temperature >250℃ was rated "A", glass transition temperature between 230-250℃ was rated "B", glass transition temperature between 210-230℃ was rated "C", and glass transition temperature <210℃ was rated "D".

[0122] 4. Chemical resistance test of the cured film: The photosensitive curable films obtained in the examples and comparative examples were immersed in a 1% hydrofluoric acid aqueous solution for 10 min, and then peeled off from the silicon wafer to obtain complete curable films. After drying the moisture in an oven at 150°C, they were immersed in a dimethyl sulfoxide solution containing 2.38% tetramethylammonium hydroxide at 50°C for 60 min. The chemical resistance was evaluated based on the weight loss of the curable films before and after the chemical resistance treatment: less than 5% was rated as 'A', 5%-15% was rated as 'B', 15%-25% was rated as 'C', and more than 25% was rated as 'D'.

[0123] 5. Adhesion test of the cured film on the copper surface: The photosensitive curable films obtained in the examples and comparative examples were placed in a high-temperature accelerated aging test chamber. The test conditions were 150°C and air exposure for 500 hours. After the test, the adhesion of the curable film to the copper surface was evaluated using the cross-cut adhesion test: 100% no cross-cut adhesion was rated as 'A', cross-cut adhesion rate within 5% was rated as 'B', cross-cut adhesion rate within 5%-15% was rated as 'C', and cross-cut adhesion rate greater than 15% was rated as 'D'.

[0124] 6. Methods for assessing the storage stability of adhesive solutions: The photosensitive resin composition solutions obtained in the examples and comparative examples were stored at room temperature under yellow light. The viscosity changes of the solutions were monitored every week and the stability of the solutions was evaluated: after 30 days at room temperature, a viscosity change of <5% was rated as "A", a viscosity change between 5-10% was rated as "B", a viscosity change between 10-20% was rated as "C", and a viscosity change >20% was rated as "D".

[0125] Table 1. Mass parts of substances in the examples and comparative examples (based on 100 parts of polyimide precursor resin).

[0126] Table 2 Test results of the examples and comparative examples

[0127] From Table 1 and Table 2, we can see that: Compared with Comparative Example 1, when the polymeric compound with an amic acid structure synthesized in this invention is not used, the glass transition temperature of the material is lower and the chemical stability is also worse, which will seriously affect the process feasibility of the material in semiconductor packaging process and cannot meet the requirements of stringent advanced packaging process.

[0128] Compared with Comparative Example 2, when thermal alkali-generating agents such as DC-1 and DC-2 that can produce strong alkalis are not used, the imidization rate of the photosensitive resin composition is lower when cured at 180°C, which leads to lower elongation at break, lower glass transition temperature, poorer chemical stability, and poorer adhesion to electroplated copper.

[0129] Compared with Comparative Example 3, when no crosslinking agent was used, the hydroxyl-containing structural units generated during the imidization of the polyamic acid ester precursor resin were not crosslinked by the crosslinking agent, which led to problems such as low glass transition temperature and poor chemical stability.

[0130] Compared with Comparative Example 4, when a non-latent thermal alkali-generating agent is used and a strongly alkaline organic amine is used directly as an imidization catalyst, the storage stability of the adhesive solution is very poor and cannot meet the storage requirements of PSPI materials. At the same time, since the crosslinking agent does not have the catalytic effect of benzenesulfonic acid, it cannot effectively improve the thermal properties and chemical stability of the material.

[0131] Compared with Examples 13, 14 and 15, Example 1 has better overall performance. It can be seen that the amount and type of heat-generating alkali agent can affect the overall performance of the cured film.

[0132] Compared with Examples 16, 17 and 18, Example 1 has better overall performance. It can be seen that the amount and type of crosslinking agent can affect the overall performance of the cured film.

[0133] Compared with Examples 1-8, the cured film of Example 9 has a lower glass transition temperature and poorer chemical stability. It can be seen that the types of dianhydrides and diamines affect the overall performance of the cured film.

[0134] The above provides a detailed description of the photosensitive resin composition, photosensitive curable film, preparation method, and electronic components provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A photosensitive resin composition, characterized in that: This includes polyimide precursor resins, photoinitiators, thermal alkali-generating agents, polymerizable compounds with ammonium acid structures, and crosslinking agents.

2. The photosensitive resin composition according to claim 1, characterized in that: The structural formula of the heat-generating alkali agent is: ， Among them, R6, R7, R8, R9, R 10 R 11 R 12 R 13 R 14 All of them are monovalent organic groups.

3. The photosensitive resin composition according to claim 2, characterized in that: The anions of the heat-generating alkali agent include p-toluenesulfonate ions; and / or The cation of the heat-generating alkali agent includes one or more of 1,8-diazabicycloundec-7-ene ion and 1,5-diazabicyclo[4.3.0]-5-nonene ion.

4. The photosensitive resin composition according to claim 1, characterized in that: The structural formula of the polyimide precursor resin is as follows: ， Wherein, X is a tetravalent organic group containing an aromatic group, Y is a divalent organic group containing an aromatic group, n is 2~150, and R1 and R2 each independently include the monovalent organic group shown in formula (1): Equation (1): , Among them, R3, R4 and R5 are independently hydrogen atoms, alkyl groups with 1 to 3 carbon atoms, and m is 2 to 10.

5. The photosensitive resin composition according to claim 4, characterized in that: The X structural unit is The Y-structure unit is , , and One or more of the following, where * indicates a connection point; and / or The X structural unit is The Y-structure unit is and One or more of the following, where m is an integer between 0 and 5, Z2 and Z3 each time they appear, are independently one of an organic group with 1 to 10 carbon atoms and containing fluorine atoms but not heteroatoms other than fluorine, an oxygen atom or a sulfur atom, and * indicates a connection site.

6. The photosensitive resin composition according to claim 1, characterized in that: The structural formula of the polymeric compound is as follows: Among them, R 15 Including one or more of aromatic and aliphatic groups, R 16 R 17 R 18 Each is independently a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and Z is a tetravalent organic group containing an aromatic group; and / or The photoinitiator comprises one or more of the following: oxime ester compounds, benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)butanone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-1-propanone, alkyl anthraquinone, benzoin alkyl ether, benzoin, alkylbenzoin, and benzoinoyl dimethyl ketal; and / or The crosslinking agent comprises one or more of hexamethoxymethyl melamine, tetra(methoxy)glycosidic urea, 4,4',4''-(ethane-1,1,1-triyl)tris(2,6-di(methoxymethyl)phenol), and 3,3',5,5'-tetramethoxymethylbiphenyl; and / or The mass ratio of the polyimide precursor resin, the photoinitiator, the thermal alkali-generating agent, the polymerizable compound, and the crosslinking agent is 100:(0.5-6):(0.1-5):(1-20):(1-15).

7. The photosensitive resin composition according to claim 1, characterized in that: The photosensitive resin composition further includes a silane coupling agent; The photosensitive resin composition also includes a metal interface bonding agent; The photosensitive resin composition also includes an antioxidant; The photosensitive resin composition further includes a polymerization inhibitor; The photosensitive resin composition also includes a solvent.

8. The photosensitive resin composition according to claim 7, characterized in that: The silane coupling agent includes ureapropyltriethoxysilane; and / or The mass ratio of the polyimide precursor resin to the silane coupling agent is 100:(0.5-6); and / or The metal interface bonding aid comprises one or more of 3-amino-1,2,4-triazole, 5-aminotetrazole, 3,5-diamino-1,2,4-triazole, and 1,5-diaminotetrazole; and / or The mass ratio of the polyimide precursor resin to the metal interface bonding agent is 100:(0.1-5); and / or The antioxidant comprises one or more of 1,3,5-trimethyl-2,4,6-tris(3,5-di-tert-butyl-4-hydroxybenzyl)benzene, 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid, 1,3,5-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, and 1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanuric acid; and / or The mass ratio of the polyimide precursor resin to the antioxidant is 100:(0.5-4); and / or The polymerization inhibitor comprises one or more of 2-nitroso-1-naphthol, p-benzoquinone, and p-hydroxyanisole; and / or The mass ratio of the polyimide precursor resin to the polymerization inhibitor is 100:(0.01-1); and / or The solvent includes one or more of N-methyl-2-pyrrolidone, γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, N,N-dimethylformamide, and N,N-dimethylacetamide; and / or The mass ratio of the polyimide precursor resin to the solvent is 100:(100-300).

9. A photosensitive curable film, characterized in that: It is formed by curing the photosensitive resin composition as described in any one of claims 1-8.

10. A method for preparing a photosensitive curable film, characterized in that, Includes the following steps: A photosensitive resin composition as described in any one of claims 1-8 is provided and subjected to a film-forming treatment to obtain a photosensitive cured film.

11. The method for preparing the photosensitive curable film as described in claim 10, characterized in that: The film-forming process includes: placing the photosensitive resin composition on a substrate to form a wet film, followed by pre-baking and heat curing.

12. The method for preparing the photosensitive curable film as described in claim 11, characterized in that: The pre-baking temperature and time are 90℃-130℃ and 100s-600s, respectively, and the heat curing temperature is 180℃-400℃; and / or The process after pre-baking and before heating and curing further includes forming a photolithographic pattern on the pre-baked wet film.

13. An electronic component, characterized in that: This includes photosensitive curable films prepared by the method described in claim 19 or any one of claims 10-12.

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