Thin film deposition apparatus cluster

Abstract

A substrate processing system (1900) includes a receiving module (1910) configured to load and unload a substrate (130) to and from the substrate processing system (1900), and a heating module (1930) configured to heat the substrate (130), and at least one processing module (1950) configured to process the substrate (130) with a continuous self-limiting surface reaction, the at least one processing module (1910) includes a laminar flow reaction chamber (120) and a substrate lift system (500) configured to transfer a substrate (130) between a loading position and a processing position in a direction perpendicular to a surface of the substrate, and a transfer unit (1910) configured to transfer the substrate (130) between the loading position and the processing position, the transfer unit includes a robotic system configured to transfer a substrate between the receiving module, the heating module, and the at least one processing module.

Description

Technical Field

[0001] This disclosure generally relates to substrate processing apparatus and associated methods. This disclosure particularly (but not exclusively) relates to loading and processing batches of substrates. Background Technology

[0002] This section provides useful background information, but does not acknowledge that any techniques described herein represent existing technology.

[0003] Substrate preparation methods can be used, particularly for depositing thin film coatings from the vapor phase onto a substrate. For example, atomic layer deposition (ALD) is a widely used technique for preparing thin films. ALD is based on alternating self-saturating surface reactions on a substrate, wherein in some embodiments, different reactants (precursors), provided as chemical compounds or elements, are sequentially pulsed into the reaction space containing the substrate in a non-reactive inert gas carrier. After reactant deposition, the substrate is typically purged with an inert gas. The precursor purge cycle is repeated multiple times as needed to obtain a film of a predetermined thickness.

[0004] The processing conditions inside the reaction chamber of the substrate processing apparatus should be as consistent as possible throughout the chamber to ensure high-quality and uniform substrate processing. Non-uniform processing conditions can also lead to undesirable increases in resource (precursor) usage and processing time. In particular, providing homogeneous processing conditions for each substrate in batch processing of multiple substrates simultaneously in the same reaction chamber is challenging. Preferably, stable and uniform precursor entry and gas flow should be ensured to reach all components of each substrate, regardless of their location within the reaction chamber.

[0005] There is a ongoing need to develop improved designs for substrate processing apparatuses or their overall operation, and / or to develop improved designs for different components of the substrate processing apparatus, such as (one or more) reaction chambers and (one or more) substrate holders. Summary of the Invention

[0006] This disclosure is intended to improve the operation of a substrate processing apparatus, improve certain components of a substrate processing apparatus, or at least provide alternatives to the prior art.

[0007] Certain embodiments of this disclosure are intended to improve uniform precursor deposition onto substrate surfaces, particularly during batch processing of substrates. In batch processing, multiple substrates are simultaneously present within a reaction space for processing. Certain embodiments enable highly uniform precursor concentrations and flow close to and across the surfaces of all substrates in the reaction chamber, allowing all substrates in a batch to have coatings that are as similar and uniform as possible.

[0008] The appended claims define the scope of protection. Any examples and technical descriptions of devices, products, and / or methods not covered by the claims in the specification and / or drawings are not presented as embodiments of the invention, but as background art or examples to aid in understanding the invention.

[0009] According to a first example aspect, a substrate processing system is provided, comprising:

[0010] The receiving module is configured to load a substrate into the substrate processing system and unload a substrate from the substrate processing system.

[0011] At least one processing module is configured to process a substrate using a continuous self-confined surface reaction, the at least one processing module including a laminar flow reaction chamber and a substrate lifting system configured to transport the substrate between a loading position and a processing position in a direction perpendicular to the substrate surface; and

[0012] The transfer unit includes a robotic system configured to transfer a substrate between the receiving module and the at least one processing module.

[0013] In some embodiments, at least one processing module includes a fluid distributor for establishing a laminar flow to the reaction chamber. In some embodiments, the fluid distributor includes two extension regions configured to diffuse the fluid flow into a laminar flow within the fluid distributor before the fluid reaches the reaction chamber.

[0014] In some embodiments, the continuous self-limiting surface reaction includes a deposition or etching reaction.

[0015] In some embodiments, the receiving module includes one or more front-opening wafer cassettes (FOUP) and device front-end modules (EFEM).

[0016] In some embodiments, the transfer unit includes an automated robotic loading system. In some embodiments, the robotic loading system may be configured to move 1, 2, 3, 4, or 5 substrates at a time.

[0017] In some embodiments, the substrate processing system includes a heating module configured to heat the substrate.

[0018] In some embodiments, the substrate processing system is configured to heat the substrate in a heating module before the substrate is transferred to the processing module for processing.

[0019] In some embodiments, the substrate processing system includes a cooling module.

[0020] In some embodiments, the substrate processing system includes the transfer unit, which includes a robotic system configured to transfer the substrate between the receiving module, the heating module, and the at least one processing module (and the cooling module, if present).

[0021] In some embodiments, processing the substrate includes transferring the substrate from a processing module to a heating module for heating the substrate between substrate processing cycles in the processing module.

[0022] In some embodiments, the substrate processing system is configured to, after a processing cycle or stage, transfer the substrate from the processing module to another module, rotate it 180 degrees, and return it to the processing module for further processing. In some embodiments, the other module is a heating module.

[0023] In some embodiments, processing the substrate includes transferring the substrate from the processing module to a rotation module for rotating the substrate 180 degrees between substrate processing cycles or stages in the processing module.

[0024] In some embodiments, the processing module includes a reaction chamber configured to process a batch of up to 30 substrates (positioned as a substrate stack) at a time. In some embodiments, the processing module includes a substrate holder configured to accommodate a batch of 1-30 substrates (or 2-30 substrates).

[0025] In some embodiments, the reaction chamber includes a fluid distributor configured to diffuse a fluid flow in a direction perpendicular to the substrate surface and parallel to the height of the substrate stack before the fluid enters the reaction chamber.

[0026] In some embodiments, the reaction chamber includes an exhaust opening configured according to the location of the exhaust duct of the reaction chamber, such that conduction can be uniformly conducted through the exhaust opening over its entire height.

[0027] In some embodiments, the substrate lifting system is a liftable substrate rotation system configured to rotate the substrate at a processing position.

[0028] In some embodiments, at least one processing module includes a liftable substrate rotation system configured to move the substrate between a loading position and a processing position, and to rotate the substrate in a laminar flow within the reaction chamber of at least one processing module.

[0029] In some embodiments, the substrate processing system includes an indexing mechanism for rotating one or more substrates.

[0030] According to a second example aspect, a method for processing a substrate in a substrate processing system is provided, the method comprising:

[0031] The receiving module receives one or more substrates;

[0032] Transfer one or more substrates to the processing module;

[0033] One or more substrates are conveyed to a processing location in a direction perpendicular to the substrate surface for processing in a layered precursor stream.

[0034] After processing, one or more substrates are transferred to the loading position in a direction perpendicular to the substrate surface;

[0035] Rotate one or more substrates 180 degrees outside the processing module (or outside the reaction chamber of the processing module); and

[0036] The substrate(s) are returned to the processing module for further processing in the layered precursor stream.

[0037] In some embodiments, the processing module includes a reaction chamber and a fluid distributor including an extended region.

[0038] In some embodiments, the method includes establishing a laminar flow (precursor) to the reaction chamber via a fluid distributor, wherein establishing the laminar flow fluid flow includes extending the fluid flow into a laminar flow in an extended region of the fluid distributor before reaching the reaction chamber.

[0039] In some embodiments, the method includes heating the substrate before transferring it to the processing module.

[0040] In some embodiments, the method includes cooling the substrate before or after transferring the substrate to the processing module.

[0041] In some embodiments, rotating one or more substrates by 180 degrees outside the processing module is performed in the heating module (including the rotation mechanism).

[0042] In some embodiments, the substrate is rotated during processing in the layered precursor stream.

[0043] In some embodiments, the substrate(s) is a wafer(s) having a 3D structure on at least one surface.

[0044] Different non-limiting example aspects and embodiments have been described above. The foregoing embodiments are only used to explain selected aspects or steps that can be used in different implementations. Some embodiments may be presented with reference only to certain example aspects. It should be understood that corresponding embodiments can also be applied to other example aspects. Attached Figure Description

[0045] Some exemplary embodiments will be described with reference to the accompanying drawings, in which:

[0046] Figure 1a and Figure 1b A schematic cross-sectional side view of a substrate processing apparatus in a loading position and a processing position, according to certain embodiments, is shown;

[0047] Figure 2a and Figure 2b A schematic cross-sectional side view of another substrate processing apparatus, according to certain embodiments, is shown in a loading position and a processing position, respectively;

[0048] Figure 3a and Figure 3b A schematic cross-sectional side view of another substrate processing apparatus, according to certain embodiments, is shown in a loading position and a processing position, respectively;

[0049] Figure 4 A schematic top view of a reaction chamber and a fluid dispenser according to certain embodiments is shown;

[0050] Figure 5 A schematic cross-sectional side view of a liftable substrate rotation system according to certain embodiments is shown;

[0051] Figure 6a and Figure 6b Schematic cross-sectional views of fluid dispensers in different orientations according to certain embodiments are shown;

[0052] Figure 7a and Figure 7b A schematic cross-sectional side view of a transition region segment of a fluid distributor having symmetrical and asymmetrical structures according to certain embodiments is shown;

[0053] Figure 8 A schematic side view of a fluid dispenser with a removable cap according to certain embodiments is shown;

[0054] Figures 9a-9c Schematic side view, front view and top cross-sectional view of a substrate processing apparatus configured to accommodate highly stacked substrates according to certain embodiments are shown;

[0055] Figures 10a-10d A structural diagram of a substrate processing apparatus according to certain embodiments is shown, the substrate processing apparatus being configured to accommodate highly stacked substrates. Figure 10a and 10b The substrate is omitted in the text. Figure 10c and 10d The substrate is shown in the image;

[0056] Figure 11a and Figure 11bSchematic side and cross-sectional views of a substrate processing apparatus configured to accommodate highly stacked substrates according to certain embodiments are shown respectively;

[0057] Figure 12a and Figure 12b Schematic side and cross-sectional views of another substrate processing apparatus configured to accommodate highly stacked substrates according to certain embodiments are shown respectively;

[0058] Figure 13 A cross-section of a substrate holder according to certain embodiments is schematically shown, the substrate holder being configured to accommodate up to 30 substrates;

[0059] Figures 14-16 A perspective view of a substrate holder of a substrate processing apparatus according to certain embodiments is shown;

[0060] Figure 17 A perspective view of the main components of a reaction chamber according to certain embodiments is shown;

[0061] Figures 18a-18c A detailed cross-section of a component of a substrate holder in a substrate processing apparatus according to certain embodiments is schematically shown;

[0062] Figure 19 A substrate processing system according to certain embodiments is shown;

[0063] Figure 20 A flowchart of substrate processing according to certain embodiments is shown; and

[0064] Figure 21 A flowchart of substrate processing according to certain other embodiments is shown. Detailed Implementation

[0065] In the following description, the same reference numerals denote the same elements or steps.

[0066] Some embodiments described below in more detail describe a substrate processing apparatus including a reaction chamber for receiving substrates arranged such that their main surfaces (or flat surfaces / sides) are adjacent to each other. Some embodiments disclose a fluid distributor configured to direct a fluid flow into the reaction chamber. In some embodiments, the flow established at the reaction chamber inlet and propagating along the length of the reaction chamber between the substrate surfaces is laminar. In some embodiments, a liftable substrate rotation system is configured to transfer substrates between a processing position and a loading position, and to rotate the substrates in the laminar flow (at the processing position). In some embodiments, the substrate processing apparatus is configured to receive and process a batch of up to 25-30 substrates (in a substrate holder). The liftable substrate rotation system is used to move the substrates. In some embodiments, the substrate processing apparatus is configured to be implemented as a substrate processing system or a part of a substrate processing system.

[0067] In the context of this disclosure, laminar flow, streamlined flow, or lateral flow is defined as a flow without turbulence (no turbulent velocity fluctuations). Laminar flow continuously advances in one direction, for example, from the inlet of the reaction chamber to the exhaust outlet. Lateral or vertical expansion of lateral flow, or deviation from the shortest linear path, can occur as long as the flow continues to advance in the predetermined direction. That is, in the context of this application, laminar flow can bend, but cannot return or flow backward. Laminar flow includes lateral diffusion of fluid within the reaction chamber. In laminar flow, the fluid layers / flows slide parallel without vortices, eddies, or water flow. For clarity, we note that this invention should not be confused with any kind of Venturi tube application, either in terms of structural details or functionality. This disclosure does not utilize incompressible liquids, but rather gaseous media under high vacuum conditions, and in most cases, at high temperatures.

[0068] In the apparatus described herein, laminar flow is supported for both the precursor fluid flow and the inert fluid flow; for example, in ALD, the inert fluid flow occurs during the cleanup phase. Thus, the substrate disposed in the substrate holder encounters laminar flow within the reaction chamber. Advantageously, in some embodiments, potential directional effects of unidirectional flow, such as differences or defects in leading and trailing edge deposition, can be mitigated by rotating the substrate. That is, during the deposition process, the fluid flow is equally directed to the substrate(s) from all directions due to the orientation of the substrate(s).

[0069] According to certain embodiments of this disclosure, a substrate processing apparatus is involved. The accompanying drawings illustrate a substrate processing apparatus according to certain embodiments. The substrate processing apparatus is configured to utilize the principles of a vapor deposition-based technique. In a preferred embodiment, the substrate processing apparatus is an atomic layer deposition (ALD) apparatus.

[0070] In ALD, at least one substrate is typically exposed in a reaction vessel to temporarily isolated precursor pulses to deposit material on the substrate surface via a continuous self-saturating surface reaction. In the context of this application, the term ALD includes all applicable ALD-based techniques and any equivalent or closely related techniques, such as the following ALD subclasses: MLD (molecular layer deposition), plasma-assisted ALD, such as PEALD (plasma-enhanced atomic layer deposition), and photon-enhanced atomic layer deposition (also known as flash-enhanced ALD).

[0071] In another embodiment, the substrate processing apparatus can be applied to other deposition techniques, such as physical vapor deposition (PVD) and plasma-enhanced chemical vapor deposition (PECVD) processes.

[0072] In some embodiments, the substrate processing apparatus is an atomic layer etching (ALE) apparatus.

[0073] Figure 1a and Figure 1b A schematic cross-sectional side view of a substrate processing apparatus according to certain embodiments, positioned in a loading position and a processing position, is shown. In the loading position, the substrate 130 is outside the reaction chamber 120. In the processing position, the substrate 130 is at least partially located inside the reaction chamber 120. Figures 1a-1b In one embodiment, the substrate 130 is located below the reaction chamber (within the intermediate space 135) at the loading position. Therefore, the substrate 130 is configured to enter the reaction chamber 120 from below when moved to the processing position.

[0074] Figures 2a-2b and Figures 3a-3b A schematic cross-sectional side view of another substrate processing apparatus, according to certain embodiments, is shown in a loading position and a processing position, respectively. (Compared to...) Figures 1a-1b The embodiments differ, depending on Figures 2a-3b In this embodiment, substrate 130 is positioned above reaction chamber 120 (within intermediate space 135) at the loading position. Therefore, substrate 130 is configured to enter reaction chamber 120 from above when moved to the processing position. At the processing position, substrate 130 is at least partially located within reaction chamber 120.

[0075] As another distinction, based on Figures 1a-2b In the substrate processing apparatus 100 of the embodiment, the fluid distributor 600 is arranged such that the feed lines 125a and 125b are vertically separated, for example, located at the same vertical line. In this case, the extended regions 620a and 620b of the fluid distributor 600 (see [reference]) Figure 6aThe fluid distributor 600 is configured to provide, in particular, horizontal distribution of fluid flow. In some embodiments, the fluid distributor 600 is arranged such that the feed lines 125a and 125b are horizontally separated, such as being located at the same horizontal plane, for example... Figures 3a-3b and Figure 4 As shown. Note that in Figures 3a-3b Only one feed line 125a is visible, because in the side view shown, the second feed line 125b is located behind the first feed line 125a. Figure 4 The top view shows feed lines 125a and 125b located on the same horizontal plane. In this type of case, the extended areas 620a and 620b of the fluid distributor 600 (see...) Figure 6b It is configured to specifically provide vertical distribution of fluid flow. (Refer to Figure 6-) Figure 8 The fluid distributor 600 is further discussed. Advantageously, by selecting a suitable orientation for the fluid distributor 600, the lateral fluid distribution (on the horizontal plane) or vertical direct flow distribution upon entering the reaction chamber can be improved.

[0076] Figure 4 A schematic top view of a reaction chamber and a fluid distributor according to certain embodiments is shown. Figure 4 The reaction chamber 120 shown can be, for example... Figures 3a-3b The reaction chamber 120 of the substrate processing apparatus.

[0077] The substrate processing apparatus 100 includes a reaction chamber 120 for processing substrates 130. The reaction chamber 120 may also be referred to as an inner chamber. The reaction chamber 120 is preferably implemented as a flat, elongated container, the dimensions of which correspond to the predetermined number of substrates 130 received therein. This allows for efficient and equal airflow between the substrates 130 arranged on the holder 140 (through substrate stacking) and across the outer surfaces of the peripheral substrates 130 in the batch (around the substrate stack). In other words, all flat surfaces of the substrates 130 in the substrate holder 140 are subjected to substantially similar conditions and can therefore be processed equally.

[0078] The outer casing 110 at least partially houses (or partially or completely surrounds) the reaction chamber 120. The outer casing 110 may also be referred to as the outer chamber. An intermediate space 135 is formed between the outer wall of the reaction chamber 120 and the inner wall of the outer casing 110. In some embodiments, the intermediate space 135 established by the interior of the outer casing 110 is maintained under a vacuum and is referred to as a vacuum chamber.

[0079] The housing 110 includes a closable opening 115, such as a loading lock, for loading and removing the substrate 130 and / or substrate holder 140 into and from the housing 110 when the liftable substrate rotation system 500 is in the loading position. In the loading position, the substrate holder 140 and the substrate are located outside the reaction chamber 120 and within the intermediate space 135. In the processing position, the substrate 130 is at least partially located within the reaction chamber 120.

[0080] A rotatable substrate holder 140 accommodates substrates 130 stacked together, the flat surfaces of which are adjacent to each other (or facing each other), allowing fluid to flow between the flat surfaces of the substrates 130, i.e., through the substrate stack. A rotary motor 155 drives one or more of the substrates 130 and the substrate holder 140 to rotate during laminar flow processing to achieve equal processing of the substrates 130 and improve processing quality. Advantageously, fluid flow into all areas of the substrates 130 is improved during the processing.

[0081] Arranging the substrates 130 side-by-side in a stacked configuration within the reaction chamber, close to each other (yet with gaps between them), facilitates the establishment of laminar flow between the substrates 130. In practice, the reaction chamber 120 can be provided in various sizes to non-limitingly conform to the dimensions of various standard substrates 130, such as disk-shaped wafer substrates with diameters ranging from 25 mm to 300 mm. The reaction chamber 120 (and thus the entire reactor apparatus 100) can be further modified to incorporate substrates 130 with diameters exceeding 300 mm, preferably ranging from 100 mm to 1000 mm. By rotating the substrates 130 during the deposition process, the effects of non-uniform flow and potential fluctuations can be accounted for and mitigated.

[0082] Precursors and inert gases ( Figure 1a Fluid streams F1 and F2 are delivered to the reaction chamber in fluid form via feed lines 125a and 125b. The reactive fluid flowing through feed lines 125a and 125b is preferably a gaseous substance, which includes, optionally, a predetermined precursor chemical carried or mixed with an inert carrier or fluid. The inert carrier or fluid is a fluid, preferably a gas, such as nitrogen (N2), argon (Ar), or any other suitable gaseous medium, which has essentially zero reactivity to the precursor (reactant) and reaction products. The inert fluid or carrier gas is provided by one or more separate sources.

[0083] In some embodiments, the precursor fluid flow is delivered to the reaction chamber 120 via at least one feed line 125a, 125b. Figure 1- Figure 4The embodiments shown depict two feed lines, but different numbers of feed lines are possible. In some embodiments, the substrate processing apparatus 100 includes one, two, three, or four feed lines. In some embodiments, multiple feed lines 125 are connected to various precursor sources, as well as inert gas sources or supply sources, to provide to the reaction chamber 120.

[0084] Preferably, the precursor fluid is delivered to the reaction chamber 120 in multiple consecutive pulses. The fluid distributor 600 (in...) Figures 1a-2b (Highlighted by a dashed box) Receives fluid from feed lines 125a and 125b and establishes a laminar flow through reaction chamber 120.

[0085] The laminar fluid flow that has passed through substrate 130 and reaction chamber 120 converges upon exiting reaction chamber 120 to form an exhaust flow. The exhaust flow exits reaction chamber 120 through exhaust duct 190. The exhaust duct is located opposite fluid distributor 600 on the opposite side of reaction chamber 120.

[0086] The exhaust stream may include, for example, excess carrier, precursor, and reaction products. In some embodiments, a vacuum pump is connected to the exhaust duct 190 and is used to continuously or periodically remove fluid material throughout the deposition process. For example, in Figure 9a The image shows a vacuum pump.

[0087] One or more heaters or heating elements 105 placed inside the housing 110 are configured to regulate the processing temperature. Figure 1a and Figure 1b One heating element 105 is shown, but other numbers of heating elements 105 are also possible.

[0088] In some embodiments, reaction chamber 120 is maintained under vacuum during operation, loading, and unloading, thus the pressure within reaction chamber 120 is maintained at a level below 1 kPa (10 mbar), preferably 10 Pa (0.1 mbar). During loading and unloading, at the loading position, reaction chamber 110 is in fluid communication with intermediate space 135. In some embodiments, reaction chamber 120 is in fluid communication with intermediate space 135 during processing. That is, in some embodiments, reaction chamber 120 is not sealed during processing at the processing position. That is, in some embodiments, reaction chamber 120 is partially open. In some embodiments, the pressure in reaction chamber 120 is set at the same level as ambient pressure. In some embodiments, the pressure in reaction chamber 120 is equal to the pressure in intermediate space 135.

[0089] In some embodiments, the pressure in the intermediate space / vacuum chamber 110 is maintained at a level of at least 1 kPa (10 mbar). Preferably, the pressure in the intermediate space 135 is maintained at a level greater than 1 kPa to establish a pressure difference between the interior of the reaction chamber 120 (typically less than 100 Pa) and the interior of the vacuum chamber 110 during substrate processing. In some embodiments, the pressure in the intermediate space 135 is maintained higher than the pressure in the reaction chamber 120 during substrate processing. In some embodiments, depending on specific operating parameters, precursors, and / or reaction conditions, the pressure in the intermediate space 135 is maintained lower than or the same as the pressure in the reaction chamber 120 during substrate processing.

[0090] The liftable substrate rotation system 500 is used for loading positions within the thin film deposition apparatus 100 (e.g., Figure 1a ) and processing location (e.g., Figure 1b The substrate 130 is moved between the two sides. A liftable substrate rotation system 500 according to some embodiments is schematically shown in... Figure 5 According to Figure 5 The liftable substrate rotation system 500 of the embodiments can be mounted onto, for example, the thin film deposition apparatus 100. In some embodiments, the liftable substrate rotation system 500 is attached as a modular unit to, for example, the (sub)frame 195 or support of the thin film deposition apparatus 100. By attaching the liftable substrate rotation system 500 directly to the apparatus 100, the liftable substrate rotation system 500 can be effectively supported and aligned relative to the housing 110 and the opening of the reaction chamber 120. The liftable substrate rotation system 500 can be attached to the (sub)frame 195, for example, by bolts.

[0091] In some embodiments, the liftable substrate rotation system 500 includes at least a lifting motor 165, a lifting shaft 160, a rotation motor 155, and a rotation shaft 150. In some embodiments, the system 500 includes a cover 180, or the system 500 is integrated into a reaction chamber cover 180. In some embodiments, the system 500 includes a substrate holder 140. In some embodiments, the liftable substrate rotation system 500 includes a linear module 175. In some embodiments, the liftable substrate rotation system 500 includes a vacuum bellows 185. In some embodiments, the liftable substrate rotation system 500 includes a vacuum-sealed feedthrough 170. In some embodiments, the vacuum-sealed feedthrough 170 is a ferrofluidic vacuum-sealed feedthrough. Therefore, in some embodiments, the device 100 or the liftable substrate rotation system 500 includes a dynamic seal for the feedthrough through the wall of the vacuum chamber 110. In some embodiments, the substrate holder 140 is replaceable. One or more substrates 130 can be loaded onto substrate holder 140 so that they can be moved by liftable substrate rotation system 500.

[0092] According to an embodiment, a liftable substrate rotation system 500 coupled to a thin film deposition apparatus 100 is capable of vertically transporting substrates 130 and their efficient processing between a processing position and a loading position. The substrates 130 are moved vertically to be accommodated within a reaction chamber 120. At the processing position, the liftable substrate processing system 500 is configured to rotate the substrates in the reaction chamber 120 during substrate processing. A cover 180 is configured to seal the chamber 120. The substrate holder 140 and the substrates 130 can be rotated within the reaction chamber 120 by a rotary motor 155. The rotation of the substrate stack, combined with laminar flow established by a fluid distributor, mitigates the effects of processing defects. Therefore, homogeneous deposition can be facilitated by reducing non-uniform fluid distribution and turbulence.

[0093] The lifting motor 165 is fixed and remains stationary relative to the (sub)frame 195 of the thin film deposition apparatus 100. The lifting motor 165 is preferably a servo motor. The lifting motor 165 drives the linear module 175 upwards and downwards (i.e., vertically), and the lifting shaft 160 connected thereto. That is, the lifting shaft 160 is connected to the lifting motor 165 via the linear module 175. Therefore, in some embodiments, in addition to the lifting motor 165, the positions of other components of the liftable substrate rotation system 500 connected to the linear module 175 and / or the lifting shaft 160 are also vertically adjustable. The liftable substrate rotation system 500 is in the processing position when the substrate 130 and the substrate holder 140 are at least partially located within the reaction chamber 120. The liftable substrate rotation system 500 is in the loading position when the substrate 130 and the substrate holder 140 are (completely) outside the reaction chamber 120. In some embodiments, for example, if the substrate stack is high, the substrate holder 140 may be partially located inside the reaction chamber 120 at the loading position.

[0094] Multiple substrates 130 may be arranged on a rotatable substrate holder 140 for processing. The substrates 130 are preferably flat planar substrates, such as wafers comprising two planes on opposite sides. In some embodiments, the substrate holder 140 is a removable component, separate from the remaining thin film deposition apparatus 100 and from the liftable substrate rotation system 500. In some embodiments, the substrate holder 140 is a fixed, immovable component of the liftable substrate rotation system 500. In some embodiments, the substrate holder 140 is a fixed, immovable component of the substrate processing apparatus 100.

[0095] The substrate holder 140 is configured to accommodate a batch of substrates, multiple substrates aligned such that their planar surfaces are parallel to each other and adjacent, i.e., as a substrate stack with empty spaces between the planar substrate surfaces to allow (layered) fluid flow between the substrates 130. The substrate holder 140 is aligned with the flat substrate surface parallel to the longitudinal axis of the reaction chamber 120. The longitudinal axis of the reaction chamber 120 is the axis along the direction of fluid flow from the (fluid) inlet of the reaction chamber 120 to the outlet conduit 190. For example, in the embodiment of Figures 1-3, the fluid flow and the longitudinal axis of the reaction chamber 120 are substantially horizontal.

[0096] One or more substrates 130 may be accommodated by a substrate holder 140. Preferably, the substrate holder 140 accommodates multiple substrates 130 for processing as a single batch. In some embodiments, substrates 130 are loaded into the substrate holder 140 one at a time. In some embodiments, substrates 130 are loaded into the substrate holder 140 more than one at a time. In some embodiments, substrates 130 are loaded into the substrate holder in groups of 1, 2, 3, 4, or 5 at a time. In some embodiments, substrates 130 are loaded onto the substrate holder 140 in groups of up to 5 at a time. In some embodiments, loading is performed by a loading robot.

[0097] In some embodiments, the substrate holder 140 includes vertical elements projecting from a base plate or a cover member. The vertical elements are configured to support the substrate 130 to form a substrate stack. In some embodiments, the substrate 130 is fitted into a receiving structure or one or more slots provided by the vertical elements. In some embodiments, the substrate holder 140 includes two or more vertical elements. The substrate holder 140 according to certain embodiments will be further discussed later in this specification.

[0098] In some embodiments, the substrate holder 140 is connected to a first end of the rotation shaft 150 (the upper end in FIG. 1). The substrate holder 140 is configured to be rotatable via the rotation shaft 150. In some embodiments, the substrate holder 140 can be detached from the first end of the rotation shaft 150 and removed from the thin film deposition apparatus 100, for example, for cleaning or to be replaced by another substrate holder 140. The rotation shaft 150 is configured to be rotatable by a rotary motor 155.

[0099] A rotary motor 155 is connected to the second end (lower end in Figure 1) of a rotary shaft 150. The rotary motor 155 is configured to rotate the substrate holder 140 and the contained substrate(s) 130 by rotating the rotary shaft 150. The rotary shaft 150 is configured to rotate the substrate holder 140 and the substrate(s) 130 therein within a plane on the substrate surface. That is, the rotary shaft 150 is perpendicular to the flat surface of the substrate 130 and oriented perpendicular to the longitudinal axis of the reaction chamber 120.

[0100] Rotation makes the conductivity more uniform across the entire surface(s) of substrate(s)130(s). Conductivity is defined as the fluid velocity divided by the pressure drop (C=q / dp). The velocity varies depending on the flow path. In the case of a circular substrate 130 (such as a wafer), fluid flow is more likely to travel laterally due to the fewer constraints imposed by the substrate 130, and the minimum conductivity, and therefore the minimum chemical dose, typically occurs in the path through the middle of the wafer. This is a fundamental problem because the highest dose is required in the middle of the wafer, where most of the surface area to be treated is located. The liftable substrate rotation system 500 and the rotating substrate 130 mitigate the problem of non-uniform conductivity on substrate 130. A rotation shaft 150 is housed within a lift shaft 160. The rotation shaft 150 is longer than the lift shaft 160 and extends through the entire length of the lift shaft 160. A first end of the rotation shaft 150 extends from the first end of the lift shaft 160 and connects to the bottom of the substrate holder 140 through an opening in the cover 180. The cover 180 is attached to the first end of the lifting shaft 160. Figures 1a-1b The upper part of the middle Figures 2a-3b The lower end of the cover 180 is supported by it. In other words, the rotation axis passes through the cover 180. The cover 180 is separate from the substrate holder 140 and does not rotate. The cover 180 is fixedly coupled to the first end of the lifting shaft 160 surrounding the rotation axis 150.

[0101] The second end of the rotating shaft 150 is connected to the rotary motor 155 via the second open end of the lifting shaft 160. The rotary motor 155 is preferably a servo motor. The rotary motor 155 is also connected to and supported by the second end of the lifting shaft 160 and / or the linear module 175. Therefore, as a component of the movable lifting system 500, the rotary motor 155 can move vertically together with the lifting shaft 160 and the linear module 175.

[0102] During substrate processing, a rotary motor 155 rotates the substrate holder 140 and(one or more) substrates 130 at a desired rotational speed. In some embodiments, the rotational speed is constant throughout the deposition process. In some embodiments, the rotational speed varies depending on the characteristics of the precursor to be deposited. The rotational speed can be relatively slow. In some embodiments, the rotational speed is half a rotation (180 degrees) per complete deposition run (including all deposition cycles required to deposit the film). The rotational speed can be relatively fast. In some embodiments, the rotational speed is a full rotation (360 degrees) during a single chemical pulse. In some embodiments, the substrate holder 140 and(one or more) substrates 130 rotate incrementally, for example, rotating 90 degrees or 180 degrees at a time (e.g., using an indexing mechanism). In some embodiments, the substrate holder 140 and(one or more) substrates 130 rotate 180 degrees midway through deposition, or rotate 90 degrees every quarter of the total number of deposition cycles.

[0103] Rotating a disk-shaped substrate 130, such as a wafer, within reaction chamber 120 is advantageous for coating deposition uniformity. By rotating, different parts of the substrate 130 can interact equally with the laminar fluid flow, and position-dependent differences during the deposition process can be minimized. In other words, the laminar fluid flow is not simply guided to the substrate from one side due to substrate rotation.

[0104] Advantageously, the rotary motor 155 (and the lifting motor 165 of the lifting shaft 160) are located outside the reaction chamber 120 and the housing 110. This allows the reaction chamber 120 and the housing 110 to remain compact, and the motors 155 and 165 for rotation and / or lifting do not need to be installed inside the reaction chamber 120 or the housing 110. Therefore, maintenance and replacement of the motors 155 and 165 become easier. Furthermore, the placement of the motors 155 and 165 allows the reaction chamber 120 and the housing to remain compact because the chambers 120 and 110 do not need to be designed to house the motors. Therefore, the number of components required to rotate and move the substrate holder 140 within the chambers 110 and 120, and the number of components that potentially affect fluid flow and require cleaning, can be kept low. Therefore, the reaction chamber 120 and the housing 110 can be designed and manufactured more compactly and better conform to the dimensions of the substrate 130. This improves processing quality, reduces the risk of contamination, and makes maintenance easier and simpler.

[0105] The lifting shaft 160 is structurally a hollow rod or tube configured to house the rotating shaft 150, such that the rotating shaft 150 can rotate independently of the lifting shaft 160 within it. The lifting shaft 160 does not rotate. The lifting shaft 160 is configured to move vertically via a lifting motor 165. Therefore, the cover 180, the rotating shaft 150, the substrate holder 140, and one or more substrates 130 are configured to move together with the lifting shaft 160. In some embodiments, the lifting shaft is connected, for example, to the tray of the linear module 175 via a fixed holder. The tray of the linear module 175 is configured to move vertically via the lifting motor 165. Therefore, the lifting motor 165 is configured to move the lifting shaft 160 by moving the tray of the linear module 175 up and down.

[0106] In some embodiments, the cover 180 is configured to seal the reaction chamber 120 at the processing position. Therefore, the cover 180 is configured to form part of the wall of the reaction chamber 120. This prevents fluid communication between the reaction chamber and the intermediate space 135, and allows for independent adjustment of the vacuum conditions at both volumes during processing. In some embodiments, the cover 180 includes alignment / sealing tension springs positioned at its four corners to secure it at the processing position and even engage with the reaction chamber 120. The lifting shaft 160 is configured to carry the cover 180 and the sealing pressure load.

[0107] In some embodiments, the cap 180 does not seal the reaction chamber 120 at the processing position. That is, the cap 180 is configured to remain slightly ajar from the wall of the reaction chamber 120. Therefore, during processing, the reaction chamber 120 remains in fluid communication with the intermediate space 135. In some embodiments, the opening gap between the cap 180 and the reaction chamber 120 at the processing position is at most 1 mm. In some embodiments, this gap is 0.1 mm. In some embodiments, this gap is in the range of 0.02 mm to 0.8 mm. Advantageously, this narrow gap allows for the establishment and control of a pressure differential between the reaction chamber and the intermediate space 135, even while maintaining fluid communication between the two spaces. This configuration is advantageous and preferred for deposition processes involving, for example, non-ideal ALD chemistry.

[0108] Non-ideal ALD chemistry includes, but is not limited to, slow-saturating surface reactions, decomposition components in surface reactions, or surface site poisoning effects or other anomalies in chemistry. Examples of non-ideal ALD chemistry include the thermal decomposition of organometallic precursors (such as TemaHf), slow-saturating surface reactions such as water reactions, and surface site poisoning effects in TiCl-based chemistry.

[0109] A vacuum-sealed feedthrough 170 (which may be located inside or attached to the lifting shaft 160) is configured to allow the rotating shaft 150 to rotate independently of the lifting shaft 160 while preventing vacuum leakage. In some embodiments, the vacuum-sealed feedthrough 170 includes a ferrofluidic vacuum feedthrough. In other embodiments, instead of implementing a ferrofluidic feedthrough, magnetic coupling may be used to transfer rotation from the surrounding atmosphere to a vacuum. In other embodiments, the rotary motor 155 may be positioned in a vacuum.

[0110] The lifting shaft 160 and its internal rotating shaft 150 enter the housing 110 through the chamber feeder 145. The vacuum sleeve 185 extends from its first end ( Figure 1a -b1's upper end) is connected to the chamber feeder 145, and from the second end ( Figures 1a-1b The lower end of the tube is connected to the upper surface of the linear module 175. The vacuum sleeve 185 allows the lifting shaft 160 to move vertically relative to the housing 110 and the chamber feeder 145 without compromising the vacuum conditions inside the housing 110. The chamber feeder 145 is arranged to allow the lifting shaft 160 to move vertically through it without compromising the vacuum conditions within the intermediate space.

[0111] In some embodiments, in order to reach the loading position ( Figure 1a The lifting motor 165 drives the lifting shaft 160 downward, causing the substrate holder 140 to descend from the reaction chamber 120 toward the housing 110. In some embodiments, the substrate holder 140 is lifted upward above the reaction chamber 120 to reach a loading position (e.g., Figures 2a-3b Therefore, in the loading position, reaction chamber 120 is in fluid communication with housing 110. In the loading position, rotary motor 155 does not rotate rotation shaft 150 (and therefore does not rotate substrate holder 140). When in the loading position, substrate(s) 130 can be loaded into (or removed from) substrate holder 140 through opening 115 located in the wall of housing 110. Opening 115 is sealable, for example through a door, and may include, for example, a loading lock.

[0112] In some embodiments (e.g.) Figure 1b The lifting motor 165 drives the lifting shaft 160 upward, causing the substrate holder 140 to be raised and lowered from the housing 110 to the reaction chamber 120 to reach the processing position. In some embodiments, the substrate 130 is lowered to the processing position. In some embodiments, the cover 180 seals the reaction chamber 120 at the processing position. This prevents fluid communication between the reaction chamber 120 and the housing 110. In some embodiments, the cover 180 does not seal the reaction chamber 120 at the processing position.

[0113] Figure 6a and Figure 6bA schematic cross-sectional view of a fluid distributor 600 in different orientations according to certain embodiments is shown. The fluid distributor 600 is viewed from the direction toward the feed lines 125a, 125b toward the reaction chamber 120 and along the longitudinal axis of the reaction chamber 120. Figures 6a-6b In one embodiment, the device 100 is in a processing position, i.e., the substrate 130 is located inside the reaction chamber 120 and is visible through the transition region 630 of the fluid distributor 600.

[0114] The fluid distributor 600 is configured to distribute fluid from one or more point sources (i.e., ...) before the fluid flow enters the reaction chamber 120. Figures 6a-6b The fluid flow received by inlets 610a, 610b extends (within the fluid distributor 600) to the width of reaction chamber 120. In some embodiments, see, for example... Figure 6b The fluid distributor 600 is configured to extend the fluid flow to the height of the reaction chamber 120. The purpose of the fluid distributor 600 is to ensure effective mixing of the fluid flow delivered through the feed lines 125a, 125b, and to establish a laminar flow of (one or more) fluids to continuously pass through the reaction chamber 120. Therefore, the effective diffusion of the fluid flow to the reaction chamber 120 can be improved.

[0115] Before entering reaction chamber 120, one or more reaction fluids delivered via multiple feed lines 125a, 125b are received into fluid distributor 600. Multiple inlets 610a, 610b are connected to at least one feed line 125a, 125b. Fluid distributor 600 includes extension regions 620a, 620b. Fluid distributor 600 includes a transition region 630. Extension regions 620a, 620b together form an extension volume. The height of the extension volume (perpendicular to the fluid flow direction through extension regions 620a, 620b) is preferably substantially constant within the extension volume.

[0116] According to Figures 6a-6b In the embodiment, the extended regions 620a and 620b are separated by the transition region 630, but are disposed under the common cover 810 (note that the cover 810 is located under the transition region 630). Figures 6a-6b The fluid distributor 600 is not visible because it is observed through the cover 810. Each of the extended regions 620a, 620b includes at least one inlet 610a, 610b. Fluid streams F1, F2 are received into the extended regions 620a, 620b through the inlets 610a, 610b.

[0117] Extended regions 620a and 620b are configured to provide corresponding fluid flows that converge in transition region 630. The corresponding flows within the opposing extended regions 620a and 620b are substantially two-dimensional (lacking a component along the length of reaction chamber 120). The fluid distributor 600 of device 100 allows the corresponding fluid flows converging in transition region 630 to be diverted, preferably substantially 90 degrees, as a combined flow toward reaction chamber 120.

[0118] The extended volume formed by the extended regions 620a, 620b can optionally be formed from separate components joined to the reaction chamber 120 by standard techniques such as welding. Therefore, in some cases, the extended volume can be provided as a removable and replaceable compartment. The cover 810 can be provided as an integral (indivisible) component of the extended volume; or, alternatively, the cover component 810 can be provided as a separate, removable component (e.g., for ease of maintenance). Figure 8 The cover 810 is shown in the image.

[0119] Transition region 630 connects extension regions 620a, 620b to reaction chamber 120. Transition region 630 is formed by the area between the extended volume including extension regions 620a, 620b and reaction chamber 120, which optionally includes a plurality of devices, such as additional flow guides (not shown), for effectively mixing the converging fluid flows.

[0120] In the preferred configuration, the corresponding extended regions 620a and 620b are triangular, such as... Figures 6a-6b As shown in the cross-sectional view. The extended regions 620a and 620b can be configured as isosceles triangles, for example, having at least one inlet 610a and 610b respectively, these inlets being positioned at an angle between congruent sides and opposite the inlet of the transition region 630 (defined by distance D1, FIG. 3). Therefore, distance D1 defines the base of the triangle. D1 also defines the maximum width (or height, depending on the orientation of the fluid distributor) of the fluid distributor 600.

[0121] The opposing extended regions 620a, 620b include planar walls attached to each other and form a shell serving as a flow channel therebetween. In some embodiments, the opposing extended regions 620a, 620b are formed within a flange structure. Thus, each extended region 620a, 620b is formed by a compartment whose interior gradually increases in width (in the D1 direction) through the distance between each inlet 610a, 610b and the transition region 320 to an extended width D1 in the direction of fluid flow F1, F2. Figures 6a-6bDue to the basic triangular shape of the extended regions 620a and 620b, the fluid propagates at a distance d1 to the extended width D1 between the inlets 610a and 610b and the transition region 630, according to a basically unfolding (radial) pattern; however, it remains within the boundaries defined by the interior of the compartments 620a and 620b.

[0122] Inlet 610a, 610b is provided on either of the extended regions 620a, 620b such that fluid streams F1, F2 propagate through the extended regions 620a, 620b at a distance D1, substantially toward each other and toward the transition region 630. In some embodiments, one or more inlets 610a on extended region 620a are arranged opposite to one or more inlets 610b on extended region 620b, thereby allowing fluid streams F1, F2 to propagate toward each other from opposite directions.

[0123] Due to these characteristics, when extended regions 620a, 620b of substantially extended (“wing-shaped”) compartments are provided, the width of the compartments gradually increases to reach an extended width D1 at a distance d1 between the inlets 610a, 610b and the transition region 630, and the profile of the fluid flow (F1, F2) propagating through the extended regions 620a, 620b is a laminar fluid flow.

[0124] According to Figure 6a In this embodiment, the fluid distributor 600 is arranged in a vertical configuration. That is, the inlets 610a and 610b are positioned vertically separated from each other. The vertical direction is parallel to the height direction of the substrate stack in the reaction chamber 120. Therefore, the diffusion of fluid streams F1 and F2 along the D1 direction in the extended regions 620a and 620b is in the direction of the flat surface of the substrate 130. Advantageously, the lateral diffusion of the fluid flow toward the outer edge in the plane of the substrate(s)130(s) is improved. Therefore, more homogeneous processing conditions can be achieved across the entire width of the reaction chamber 120. The advantageous fluid flow diffusion is achieved in the fluid distributor 600 before reaching the reaction chamber 120.

[0125] According to Figure 6b In one embodiment, the fluid distributor 600 is arranged in a horizontal configuration. That is, the inlets 610a and 610b are positioned horizontally separate from each other. Figure 6b In one embodiment, the fluid dispenser 600 is relative to... Figure 6aThe fluid distributor 600 of this embodiment is oriented by a 90-degree rotation. The horizontal direction is parallel to the plane of the flat surface of the substrate 130 housed in the substrate holder 140 within the reaction chamber 120. Therefore, the diffusion of fluid streams F1 and F2 in the extended regions 620a and 620b in the D1 direction is along the height direction of the substrate stack. The fluid distributor 600 is configured to provide a fluid flow uniformly distributed along the height direction of the substrate stack. Advantageously, the vertical diffusion of the fluid flow toward the uppermost and lowermost substrates in the stack can be improved. Therefore, the processing quality and conditions of high substrate stacks can be improved.

[0126] Figure 7a and Figure 7b A schematic cross-sectional side view of the transition regions of a fluid distributor 600 (highlighted with dashed boxes) according to certain embodiments, having symmetrical and asymmetrical transition regions 630 respectively, is shown. The transition regions 630 are configured to receive and combine fluid streams F1 and F2 arriving therein via extension regions 620a and 620b, respectively. At the transition regions 630, the fluid streams F1 and F2 from substantially opposite sides converge and mix. A combined fluid flow is formed, which is further directed to the reaction chamber 120.

[0127] Figure 7b The solid arrows depict the flow to and within the fluid distributor 600, and the fluid flows F1, F2. In the substrate processing apparatus 100, the fluid streams F1, F2 change direction as they propagate through the transition region 630 from the extended volume to the reaction chamber 120. By providing the fluid distributor 600 according to the embodiment, and by virtue of the relatively flat reaction chamber 120 being configured as an enclosed space surrounding a batch of substrates 130 arranged vertically stacked, the formation of jets, eddies, and / or vortices in the fluid pattern propagating through the transition region 630 is minimized, and laminar fluid flow is facilitated. As the precursor fluid propagates in the form of a stable laminar fluid flow F across the entire length of the reaction chamber and between the rotating substrates 130, the precursor concentration is maintained substantially uniform. Consequently, all surfaces of the substrate 130 become deposited with a film of the same thickness, and precursor molecules are uniformly / uniformly distributed across the deposition surfaces (one or more).

[0128] Overall, the implementation of transition region 630 is designed to ensure effective mixing of the streams F1 and F2. Therefore, all (wafer) substrates 130 downstream of transition region 630 in reaction chamber 120 are deposited with a uniform precursor layer, resulting in uniform precursor concentration on both the individual substrate (planar) surface and the surfaces of all substrates 130 within the batch / reaction space defined by reaction chamber 120. In transition region 630, mixing is performed in a highly controlled manner without eddy current formation and pressure loss, further achieving effective purification.

[0129] In some embodiments, the size of the transition region 630 in the D1 direction (see [reference]) depends on the orientation of the fluid distributor 600. Figures 6a-6b The transition region 630 is substantially equal to the width or height of the substrate 130 housed in the substrate holder 140. In some embodiments, the dimension of the transition region 630 in the D1 direction (see [reference needed]) depends on the orientation of the fluid distributor 600. Figures 6a-6b It is basically equal to the width or height of the reaction chamber 120.

[0130] In a direction parallel to direction d1, the cross-section of the transition region 630 has a biconcave or hourglass shape. That is, the walls 720a and 720b of the transition region 630 form a biconcave channel from the expanded volume to the reaction chamber 120. Walls 720a and 720b are opposite to each other. Figures 7a-7b The other two invisible walls are preferably straight and aligned with the walls of the reaction chamber, for example, as shown in the figure. Figures 3a-3b As shown.

[0131] As one enters the transition region 630 from the expanded volume, the walls 720a and 720b of the transition region 630 gradually slope or narrow until the narrowest point, namely the throat 710. The throat 710 has a substantially constant width d2 over the entire distance D1. Figures 6a-6b The throat 710 serves as a contraction zone. Thereafter, the transition zone channel shape, defined by the transition zone walls 720a, 720b, expands until it reaches the width (or height, depending on the orientation of the fluid distributor) of the reaction chamber 120. Note that... Figures 7a-7b A fluid distributor 600 in a vertical orientation is shown, but the described embodiment is equally applicable to a fluid distributor 600 arranged in a horizontal orientation, such as... Figures 3a-3b and Figure 4 As shown.

[0132] The transition region 630 and throat 710 are implemented in such a manner that effective (convection and diffusion) mixing of the fluid under laminar flow conditions is allowed. In the transition region 630, fluid streams F1, F2 arriving from substantially opposite directions are redistributed and recombine to form a combined flow parallel to the longitudinal axis of the reaction chamber 120, without the presence of eddies or jets associated with turbulence. In some embodiments, laminar flow mixing in the transition region 630 is achieved through a unique configuration of the fluid distribution device 600 and the reaction chamber 120, such as… Figure 7a and Figure 7b As shown.

[0133] Streams F1 and F2 converge and mix in transition region 630. The combined stream propagates into reaction chamber 120, which is configured as a substantially flat, elongated body. In some embodiments, reaction chamber 120 extends along its entire length defined by its longitudinal axis (from its...). Figure 7a The boundary of the transition region indicated by the reaction chamber opening (i.e., from the reaction chamber inlet 750 to the exhaust port 190) has a constant cross-section (in a plane perpendicular to the longitudinal flow direction). Therefore, the combined flow established at the inlet 750 of the reaction chamber 120 is laminar and propagates along the length of the reaction chamber 120 between the substrate surfaces (or sides of the substrate) 130 (with a substantially uniform velocity in some embodiments). In other embodiments, the shape of the reaction chamber 120 curves inward near the exhaust port 190.

[0134] The reaction chamber inlet (750) is configured to induce vertical diffusion of the fluid flow into the reaction chamber (120).

[0135] In some embodiments, such as Figure 7a As shown, the transition region walls 720a and 720b of the transition region 630 form a symmetrical transition region channel. That is, walls 720a and 720b are mirror-symmetrical with respect to the longitudinal axis of the reaction chamber 730. Therefore, the curvature and angle of walls 720a and 720b are substantially the same. Advantageously, fluid flow near and after the transition region wall 720a can be established as substantially the same as fluid flow near and after the transition region wall 720b, flowing towards the reaction chamber 120. In other words, fluid flowing along a direction parallel to D1 towards the substrate region located at or near the end of the reaction chamber 120 can receive substantially similar fluid flow from the transition region 630.

[0136] In some embodiments, such as Figure 7bAs shown, the transition region walls 720a and 720b of the transition region 630 form an asymmetrical transition region channel. That is, the walls 720a and 720b are not mirror-symmetric with respect to the longitudinal axis of the reaction chamber 730. Therefore, the curvature of the walls 720a and 720b and / or the narrowing angle towards the throat 710 and / or the expansion angle from the throat 710 towards the reaction chamber 120 are different from each other. In other words, the fluid flowing to the end of the reaction chamber 120 in a direction parallel to direction D1 can be different from each other. Advantageously, the fluid flowing to the reaction chamber 120 can be regulated by the shape of the transition region 630 to take into account different flow environments, such as the bottom of the reaction chamber 120 (e.g., the bottom of the substrate holder 140 and the cover 180 structure) and the top of the reaction chamber 120 (e.g., a smooth reaction chamber top wall). Therefore, the geometry of the transition region allows for optimization of the fluid flowing to the lateral or vertical ends of the reaction chamber.

[0137] In some embodiments, transition region 630 begins at transition region opening 740 and terminates downstream of throat 710. In some embodiments, transition region 630 further includes reaction chamber inlet 750. In other embodiments, transition region 630 terminates at reaction chamber inlet 750. In some embodiments, transition region opening 740 and reaction chamber opening 750 are equal in size. In some embodiments, transition region opening 740 and reaction chamber opening 750 are not equal. In some embodiments, transition region opening 740 is larger than reaction chamber opening 750. In some embodiments, transition region opening 740 is smaller than reaction chamber opening 750. Furthermore, each opening 740, 750 has a length extending at a distance D1, which corresponds to the extended width of each sub-region 620a, 620b. Figures 6a-6b ).

[0138] Typically, the cross-sectional area at the reaction chamber opening 750 is defined by the cross-sectional area of ​​the reaction chamber 120, while the cross-sectional area at the transition region opening 740 can be modified according to design requirements. Therefore, the width of the reaction chamber opening 750 typically corresponds to the width of the reaction chamber 120. The reaction chamber opening 750 thus delineates the boundary between the transition region 630 and the reaction chamber 120; therefore, the reaction chamber opening 750 can also be referred to as the entrance to the reaction chamber 120.

[0139] Additionally, the fluid dispenser 600 may include auxiliary devices for facilitating the mixing of fluids F1 and F2. For example, the fluid dispensing device 600 may include a flow shaping element 760. Figure 7bThe flow-forming element 760 is configured to regulate the flow direction of fluid streams F1, F2 entering the transition region 630, so as to substantially guide the flow into the reaction chamber 120. In some embodiments, the flow-forming element 760 is configured as an integral extension of the cover 810. In some embodiments, the flow-forming element 760 is configured as a separate component removably connected to the interior of the cover 810. In some embodiments, the flow-forming element 760 has a cross-section with a dome, triangle, truncated triangle, or similar shape. In the fluid distributor 600, the element 760 is preferably arranged such that its top (the most prominent flow-forming component) faces the reaction chamber 120.

[0140] Element 760 prevents the flow streams F1 and F2 arriving at the transition region 630 via compartments 620a and 620b from directly colliding at the transition region inlet 740; instead, flow shaping element 760 guides the flow streams F1 and F2 to the throat 710. This arrangement improves the mixing rate and mixing uniformity.

[0141] Figure 8 A schematic side view of a removable cover 810 of a fluid dispenser 600 according to some embodiments is shown. In some embodiments, the fluid dispenser 600 includes a removable cover 810. The cover can be attached, for example, by bolts. Advantageously, the removable cover 810 makes it possible to improve the maintenance and cleaning of the fluid dispenser 600. In some embodiments, the cover 810 includes attachment points 820a, 820b for feed lines 125a, 125b.

[0142] Figures 9a-9c Schematic side view, front view and top cross-sectional view of a substrate processing apparatus 100 according to certain embodiments are shown. The substrate processing apparatus 100 is configured to accommodate highly stacked substrates. Figures 9a-9c The existing external vacuum chamber is omitted. In such embodiments, the fluid distributor is preferably in a horizontal configuration (e.g., in...). Figure 6b and Figure 9b as well as Figures 10a-10d In this embodiment, the fluid flow distribution in the vertical direction along the height of the substrate stack is maximized. In some embodiments, the substrate processing apparatus is the apparatus according to the embodiments of Figures 1-3, but includes a reaction chamber 120 and a substrate holder 140 configured to accommodate a stack of 1-30 substrates 130.

[0143] In some embodiments, the high substrate stack is a stack of up to 30 substrates 130. In some embodiments, the reaction chamber is configured to process a batch of up to 30 substrates at a time. In some embodiments, the liftable substrate rotation system 500 is configured to rotate the substrates 130 during processing and move the substrates between a loading position and a processing position. Figures 9a-9bThe lifting shaft 160 of the liftable substrate rotation system 500 can be seen. In some embodiments, the liftable substrate processing system 500 includes a substrate holder 140 configured to accommodate up to 30 substrates. In some embodiments, the reaction chamber 120 includes a substrate holder 140 configured to accommodate up to 30 substrates. In some embodiments, the reaction chamber 120 is sealed by a cover 180 in the processing position. In some embodiments, the reaction chamber 120 is partially open in the processing position, i.e., not sealed by the cover 180.

[0144] Figure 9c A top view shows the fluid flow path (solid arrow) through the substrate 130 in the reaction chamber 120. The lowest fluid conductivity occurs at the center of the substrate(s) 130 due to less confinement at the sides. Rotating the substrate(s) can promote more uniform conductivity.

[0145] For example, a high substrate stack of 30 substrates 130 presents an additional challenge: providing sufficient fluid flow from a single reaction chamber opening 750 to the top and bottom substrates. To improve the vertical direct flow distribution to the reaction chamber 120, the fluid distributor can be arranged in a horizontal configuration, i.e., maximizing the diffusion of fluid flow along the height direction of the substrate stack, as previously discussed regarding, for example... Figure 6b As discussed above, the benefits of substrate rotation and fluid distributors can be combined to simultaneously improve the handling of high substrate stacks.

[0146] Figures 10a-10d A structural diagram of a substrate processing apparatus 100 according to certain embodiments is shown. The substrate processing apparatus is configured to accommodate a high substrate stack, such as a stack of up to 30 substrates 130.

[0147] In some embodiments, the shape of the reaction chamber 120 is configured according to the substrate 130. For example, for a circular wafer (130), a circular reaction chamber 120 is preferred, with the sidewalls of the reaction chamber having a radius of curvature similar to that of the wafer (or the reaction chamber walls following the shape of the substrate 130). Such reaction chambers 120 with circular walls are shown in... Figures 10a-10d Advantageously, the empty space within the reaction chamber can be minimized. Furthermore, the flow conditions within the reaction chamber 120 can be made as uniform as possible.

[0148] To facilitate the flow of laminar fluid through the stacked substrates 130 in the reaction chamber 120, the exhaust opening 1010 is modified accordingly. The exhaust opening 1010 is located on the rear wall of the reaction chamber 120, opposite the reaction chamber opening 750. According to... Figures 10a-10dIn some embodiments, the height of the exhaust opening 1010 extends across the entire height of the reaction chamber 120. That is, the height of the exhaust opening matches the interior height of the reaction chamber 120.

[0149] According to Figures 10a-10d In this embodiment, the exhaust duct 190 is connected from below to the exhaust opening 1010 of the reaction chamber 120 at the bottom of the back side of the reaction chamber 120. Therefore, the maximum suction force from the vacuum pump 910 connected to the exhaust duct 190 is close to the bottom of the exhaust opening 1010. To enable homogeneous suction across the entire height of the exhaust opening 1010, the shape of the exhaust opening 1010 is adjusted. Therefore, the fluid conductivity through the exhaust opening 1010 is adjusted by adjusting the shape of the exhaust opening 1010.

[0150] According to Figures 10a-10d In some embodiments, the conductivity through the exhaust opening 1010 is regulated by flow-limiting features, such as an exhaust block 1020 disposed to the exhaust opening 1010. The external shape of the exhaust opening 1010 is rectangular, but the exhaust block 1020 extends across the entire height of the exhaust opening 1010 at its midpoint. The exhaust block 1020 is widest near the bottom of the exhaust opening 1010, i.e., closest to the vacuum conduit 190, and narrows upwards. Therefore, from the bottom of the exhaust opening 1010 and the exhaust conduit 190 upwards, the portion of the exhaust opening 1010 covered by the exhaust block 1020 gradually decreases. Thus, the exhaust block 1020, by physically obstructing fluid flow, ensures uniform conductivity and suction of the vacuum pump 910 through the exhaust opening 1010 at all heights.

[0151] In some embodiments, the shape of the exhaust opening 1010 is configured according to the position of the exhaust duct 190. Therefore, regardless of the position of the exhaust duct 190, uniform suction through the exhaust opening can be achieved at all reaction chamber heights 120.

[0152] According to Figures 11a-11b In some embodiments, the exhaust duct 190 connects to the bottom of the rear wall of the reaction chamber 120. Therefore, the strongest suction force occurs at the bottom of the rear wall of the reaction chamber 120, closest to the opening of the exhaust duct 190. In some embodiments, to reduce the suction force at the bottom and gradually increase the suction force towards the top of the exhaust opening 1010, the exhaust opening is shaped as an inverted triangle, such as... Figure 11b As shown. Therefore, a higher conductivity can be achieved towards the top of the exhaust opening. As a result, due to the shape of the exhaust opening 1010, a uniform conductivity can be achieved over the entire height of the exhaust opening 1010.

[0153] According to Figures 12a-12bIn some embodiments, the exhaust duct 190 is connected to the middle of the rear wall of the reaction chamber 120. Therefore, the strongest suction force occurs in the middle of the rear wall of the reaction chamber 120. In some embodiments, to reduce the suction force in the middle and increase the suction force at the bottom and top of the exhaust opening 1010 to achieve uniform conductivity, the exhaust opening 1010 is shaped like an hourglass, such as... Figure 12b As shown. Advantageously, uniform conductivity can be achieved at the height of the exhaust opening 1010.

[0154] As described above, the substrate holder 140 shown in various embodiments includes vertical elements projecting from the substrate or from the cover component. The vertical elements are configured to support the substrate 130 to form a substrate stack. In some embodiments, the substrate 130 is fitted into a receiving structure or one or more slots provided by the vertical elements. In some embodiments, the substrate holder 140 includes two or more vertical elements. In some embodiments, the substrate holder 140 includes two vertical elements supporting the substrate on opposite sides. In some embodiments, the substrate holder 140 is a single-piece block, a monolithic component (without welding or the like). In some embodiments, the substrate holder 140, together with the body component of the reaction chamber (which may also be a single-piece block, a monolithic component), forms a sealed reaction chamber housing. In some embodiments, this sealed reaction chamber housing, in a closed configuration, opens only on the inlet side to connect to the fluid distributor 600 (or a relative diffuser of the fluid distributor 600), and on the opposite outlet side for an exhaust duct or connector 190. In some embodiments, the substrate holder 140 (and the main body component of the reaction chamber) is manufactured using a one-piece block manufacturing method, such as 3D printing or a similar method. Such reaction chambers (or the main body components of the reaction chamber) are as follows: Figure 17 As shown.

[0155] Figure 13 A schematic cross-sectional side view of a substrate holder according to certain embodiments is shown, the substrate holder being configured to accommodate up to 30 or even more substrates. Figures 14-16 A substrate holder 140 according to some embodiments is shown.

[0156] In some embodiments, the substrate holder (140) is monolithic. Thus, in some embodiments, the substrate holder (140) is made of a single solid block of material.

[0157] In some embodiments, the substrate holder 140 includes vertical elements 1310 configured to receive substrates 130, for example, on ridges 1320 of the vertical element 1310 (or in grooves between ridges). In some embodiments, the substrate holder 140 includes at least two vertical elements 1310. In some embodiments, the substrate holder 140 includes vertical elements to receive more than 15 substrates, or 25 or more substrates. In some embodiments, the substrate holder includes vertical elements to receive more than 15 substrates and up to 30 or 50 substrates. In some embodiments, the vertical element 1320 includes ridges 1320 to receive substrates 130. In some embodiments, the substrate holder has the capacity to receive 1-20 substrates, and in other embodiments up to 30 substrates 130.

[0158] In some embodiments, the substrate holder includes a substrate 1330. In some embodiments, the substrate holder does not include a substrate 1330, but the cover 180 serves as a substrate, i.e., as the surface closest to the lowermost substrate 130 accommodated by the substrate holder 140.

[0159] In some embodiments, the substrate holder is removably attachable. In some embodiments, the substrate holder 140 can be removed from the housing 110, for example, to be cleaned or loaded / unloaded outside the housing 110 and / or reaction chamber. The substrate holder 140 can be replaced by another substrate holder 140, for example, capable of accommodating different numbers of substrates 130 or substrates 130 of different sizes.

[0160] In some embodiments, the loading / unloading of substrate 130 is performed automatically by a robotic loading arm. In some embodiments, one, two, three, four, or five substrates are loaded at a time. In some embodiments, loading / unloading is performed manually by a user. A removably attached substrate holder 140 allows the use of substrate holders 140 configured to accommodate substrates 130 of different sizes, shapes, and numbers within the liftable substrate rotation system 500 and the substrate processing apparatus 100. Furthermore, the distance between adjacent substrates 130 to be rotated can be adjusted by selecting substrate holders 140 with different spacing. Therefore, by selecting a suitable substrate holder 140, several substrate-related processing parameters can be easily controlled and adjusted.

[0161] In some embodiments, the substrate holder 140 is configured to hold a batch of 1-30 substrates 130. In some embodiments, the substrate holder 140 has a groove for holding a batch of 15 substrates 130.

[0162] In some embodiments, the substrate holder 140 is configured to accommodate a (circular) substrate 130 having a diameter in the range of 100 mm to 1000 mm, preferably 200 mm, and most preferably 300 mm.

[0163] Figures 18a-18d A detailed cross-section of a component of a substrate holder for a substrate processing apparatus according to certain embodiments is schematically shown. In some embodiments, substrates 130 are arranged in a substrate holder 140 such that the substrates 130 are equidistant from each other. In some embodiments, the distance between the flat surfaces of the substrates 130 is not equal. In some embodiments, substrates 130 in a batch are arranged such that their flat surfaces are equidistant from each other. That is, the spacing (of the ridges 1320) is equal.

[0164] In some embodiments, the arrangement of the substrates 130 in the substrate holder 140 is mirror-image, i.e., symmetrical with respect to the longitudinal axis of the reaction chamber 120. In other embodiments, the arrangement of the substrates in the substrate holder is asymmetrical with respect to the longitudinal axis of the reaction chamber 120.

[0165] In some embodiments, the outermost substrate 130 in a batch, i.e., one of the substrates 130 having a planar side facing the wall (top and bottom) of the reaction chamber 120 at the processing location, is at a distance substantially the same as the distance between all substrates 130 in that batch. Advantageously, the environment experienced by the uppermost wafer is substantially similar to the environment experienced by the lowermost wafer and wafers within the stack.

[0166] In some embodiments, the outermost surface of the outermost substrate 130 faces both the top wall of the reaction chamber 120 and the bottom surface of the substrate holder 140 located above the cover 180. In some embodiments, the substrate holder 140 does not include the substrate 1330 between the cover 180 and the nearest substrate 130, such that one of the flat surfaces of the substrate directly faces the cover 180. In the processing position, the cover 180 forms the bottom wall of the reaction chamber 120.

[0167] In some embodiments, the distance between the outermost surface of the outermost substrate 130 and the wall of the reaction chamber 120 or the bottom surface of the substrate holder 140 is not equal to the inter-substrate distance of the substrate holder 140. In some embodiments, the distance from the outermost substrate surface to the wall of the reaction chamber 120 (and / or the bottom surface of the substrate holder 140 or the cover 180) is greater than the inter-slot distance. In some embodiments, the distance between the top outermost substrate 130 and the wall of the reaction chamber 120 is equal to the distance between the bottom outermost substrate 130 and the wall of the reaction chamber 120. In some embodiments, the distance between the top outermost substrate 130 and the wall of the reaction chamber 120 is not equal to the distance between the bottom outermost substrate 130 and the wall of the reaction chamber 120. Advantageously, by controlling the distance to the wall of the reaction chamber 120, the airflow to the outermost substrate surface 130 can be controlled.

[0168] In some embodiments, the vertical element 1310 of the substrate holder 140 extends beyond the substrate stack and contacts one or more walls of the reaction chamber 120 at the processing location. In some embodiments, the vertical element 1310 contacts the top plate of the reaction chamber 120 (connected from the opposite end of the substrate holder 140 to the cover 180). In some embodiments, the vertical element 1310 contacts the bottom plate of the reaction chamber 120 (connected from the opposite end of the substrate holder 140 to the cover 180). Advantageously, the uppermost and lowermost substrates 130 can have similar processing conditions.

[0169] Figure 18a The vertical element 1310 of the substrate holder 140 is schematically shown, configured to provide equal inter-substrate distances (i.e., ridge spacing). Furthermore, the distances from the uppermost and lowermost substrates 130 to the reaction chamber 120 wall or substrate 1330 differ from the inter-substrate distances within the stack. Additionally, the distance from the uppermost substrate 130 to the reaction chamber wall is greater than the distance from the lowermost substrate 130 to the substrate 1330. Therefore, the substrate positioning is not mirrored with respect to the central axis 730 of the reaction chamber 120.

[0170] Figure 18b A vertical element 1310 of the substrate holder 140 is shown, extending from the substrate 1330 to the top plate of the reaction chamber at the processing location. However, the distance from the uppermost substrate 130 to the top plate is configured differently than the distance from the lowermost substrate 130 to the substrate 1330. Therefore, the substrate positioning is not mirrored with respect to the longitudinal axis of the reaction chamber 120. The inter-substrate distances within the substrate stack are equidistant.

[0171] Figure 18cA vertical element 1310 of the substrate holder 140 is shown, extending from the substrate 1330 to the top plate of the reaction chamber at the processing location. The substrate positioning is mirror-image relative to the longitudinal axis of the reaction chamber 120. The ridges 1320 configured to hold the substrate 130 within the stack are not equidistant. The distance between the ridges 1320 is shortest near the longitudinal axis 730 of the reaction chamber and larger further away from the axis 730. The distance from the uppermost substrate 130 to the top plate is equal to the distance from the lowermost substrate 130 to the substrate 1330. However, the substrate-to-wall distance differs from any inter-substrate distance.

[0172] Figure 18d A vertical element 1310 of the substrate holder 140 is shown, extending from the substrate 1330 to the top plate of the reaction chamber 120 at the processing position. The ridge spacing of the substrate holder 140 is not mirrored with respect to the longitudinal axis 730: the inter-substrate distance is shorter at the bottom and larger at the top. However, the distance from the uppermost substrate 130 to the top plate is equal to the distance from the lowermost substrate 130 to the substrate 1330.

[0173] Figure 19 A substrate processing system is schematically illustrated. System 1900 is configured to manipulate and process substrates under clean vacuum conditions.

[0174] In some embodiments, the substrate processing system includes a receiving module 1920. The receiving module 1910 is configured to load a substrate 130, such as one or more wafers, into the substrate processing system 1900. The substrate is also unloaded from the substrate processing system 1900 via the receiving module 1910. In some embodiments, the receiving module 1910 includes one or more front-opening wafer transfer cassettes, FOUPs, or the like, and a device front-end module (EFEM).

[0175] In some embodiments, the substrate processing system 1900 includes a transfer unit 1920. The transfer unit includes a robotic system for transferring the substrate 130 from one module to another without exposing the substrate 130 to the atmosphere outside the substrate processing system 1900.

[0176] In some embodiments, the substrate processing system 1900 includes a heating module 1930. The heating module 1930 is configured to heat a substrate 130 transferred thereto by a transfer unit 1920. In some embodiments, the substrate 130 is heated before being transferred to the processing module 1950. In some embodiments, one or more substrates 130 are transferred to the heating module 1930 between processing cycles of the processing module 1950.

[0177] In some embodiments, the substrate processing system 1900 includes a cooling module 1940. The cooling module 1940 is configured to cool the substrate 130 conveyed thereto by the transfer unit 1920. In some embodiments, the substrate 130 is cooled in the cooling module 1940 after being heated in the heating module 1930 and before being conveyed to the processing module 1950, or before being unloaded from the system 1900.

[0178] The substrate processing system 1900 includes a processing module 1950. In some embodiments, the processing module 1950 is an ALD module. In some embodiments, the processing module 1950 includes the aforementioned laminar flow reaction chamber 120. In some embodiments, the processing module 1950 includes a substrate lifting system configured to transfer one or more substrates 130 between a loading position and a processing position. In some embodiments, the processing module 1950 includes a liftable substrate rotation system 500. That is, the processing module 1950 may include, for example, a liftable substrate processing system 500, a fluid distributor 600, and a reaction chamber 120 configured to accommodate and process up to 30 substrates.

[0179] In some embodiments, after a processing cycle or stage, the transfer unit 1920 transfers one or more substrates 130 from the processing module 1950 to another module, rotates them 180 degrees (in the plane), and returns them to the processing module 1950 for further processing. In some embodiments, the heating module 1930 is provided with a rotating mechanism (of the type shown or a simpler rotating mechanism) 1935. Thus, in some embodiments, after a processing cycle or stage, the transfer unit 1920 transfers one or more substrates 130 from the processing module 1950 to the heating module 1930 for heating, rotates them 180 degrees (in the plane), and returns them to the processing module 1950 for further processing. In some embodiments, the rotation of one or more substrates 130 is performed without heating. That is, the heating module 1930 may optionally be used as a rotating module. In some embodiments, the substrate processing system 1900 includes a dedicated rotating module (different from the heating module 1930).

[0180] Thanks to the dedicated rotating module or heating module 1930 with rotational capability, the substrate 130 can be processed equally from opposite directions through two processing cycles, without the need to rotate the substrate within the processing module 1950 or reaction chamber 120. During the first processing cycle or stage, fluid flows from the first edge to the substrate, and after rotation, during the second processing cycle or stage, it flows from the direction of the second edge opposite to the first edge. Advantageously, the processing module 1950 can remain simple. Furthermore, even without the liftable substrate rotation system 500 in the processing module 1950, the benefits of rotating the substrate 130 can be at least partially realized.

[0181] In some embodiments, the substrate processing system 1900 includes a plurality of processing modules 1950. In some embodiments, at least some of the processing modules include laminar flow reaction chambers 120.

[0182] Overall, using the substrate processing system 1900, the substrate 130 can be efficiently processed under highly controlled and clean conditions.

[0183] Figure 20A flowchart of substrate processing according to certain embodiments is shown. In step 2001, a loading robot loads multiple substrate wafers into a substrate holder, which is then conveyed to a loading position in a vacuum chamber, under vacuum. In some embodiments, five substrates are loaded at a time, such that after six loading rounds, the substrate holder holds a total of 30 substrates. In other embodiments, a different number of substrates may be loaded at a time. In step 2002, the substrate holder supporting the substrates is conveyed to a processing position in a reaction chamber (contained by the vacuum chamber). In some embodiments, the substrates are horizontally oriented in a vertical stack (substrate stack). In step 2003, the lid of the reaction chamber is closed (although in other embodiments, the lid may be partially open). In some embodiments, the substrate holder forms the lid of the reaction chamber such that when the substrate holder is conveyed to the processing position, the substrate holder closes the reaction chamber (in some embodiments, the reaction chamber is sealed). In step 2004, deposition process steps are performed (in other embodiments, these may include etching). In some embodiments, the process steps include an ALD or MLD deposition step. These process steps are performed under laminar flow conditions, which are determined by the apparatus geometry as described above. According to the example method, in step 2004(i), precursor vapor of the first precursor is pulsed (pulse A) into the reaction chamber. The precursor vapor flows as a laminar fluid over the substrate stack and adheres to the substrate surface by chemisorption, forming a first semi-monolayer of the deposited material in a self-saturating (self-limiting) manner. Step 2004(i) is followed by a first purge period (purge A), during which, in step 2004(ii), an inert gas flows over the substrate stack to purge the substrate surface. Step 2004(ii) is followed by a period of time, namely step 2004(iii), during which precursor vapor of the second precursor is pulsed (pulse B) into the reaction chamber. The precursor vapor flows as a laminar fluid over the substrate stack and adheres to the substrate surface by chemisorption, forming a first complete monolayer of the deposited material. Step 2004(iii) is followed by a first cleanup phase (cleanup B), during which, as in step 2004(iv), an inert gas is flowed through the substrate stack to clean the substrate surface. This completes the first process cycle. The process cycle is repeated multiple times as needed to obtain the desired thickness of deposited material. During deposition, the substrate stack (or the substrate holder supporting the substrate) is rotated within the reaction chamber to improve uniformity. In some embodiments, the substrate stack rotates continuously (e.g., at a constant rotational speed). In other embodiments, the rotation includes stepwise rotation, for example, using an indexing mechanism (e.g., 90 degrees or 180 degrees at a time). In some embodiments, the substrate stack rotates 180 degrees once midway through deposition, or rotates 90 degrees at each quarter point of the complete deposition sequence. Once the deposition process is complete (by repeating the process cycle to complete the deposition sequence and obtain the desired thickness of the deposited material), the reaction chamber lid is opened in step 2005.In step 2006, the substrate is removed from the reaction chamber by conveying the substrate holder to a loading location (either into the vacuum chamber or to an intermediate space between the reaction chamber and the vacuum chamber). In some embodiments where the substrate holder forms a cover for the reaction chamber, the cover is opened when the substrate holder is conveyed to the loading location. Finally, in step 2007, the substrates are unloaded from the substrate holder (under vacuum) by a loading robot (e.g., five substrates at a time). In some other embodiments, only a single substrate is processed within the reaction chamber, rather than a stack of substrates.

[0184] Figure 21 A flowchart of substrate processing according to certain other embodiments is shown. Figure 21 The method shown corresponds in other respects to Figure 20 The method shown differs in that rotation is performed outside the reaction chamber, rather than inside. Therefore, in step 2101, a loading robot loads one or more substrates under vacuum into a substrate holder that is transferred to a loading position in the vacuum chamber. In steps 2102 and 2103, the substrate holder is transferred to a processing position within the reaction chamber (contained by the vacuum chamber), and the lid of the reaction chamber is closed (as described, these steps can occur simultaneously). In step 2104, a deposition process step is performed. In some embodiments, the process steps include an ALD or MLD deposition step. These process steps are performed under laminar fluid flow conditions determined by the apparatus geometry as previously described. According to the example method, in step 2104(i), precursor vapor of the first precursor is pulsed (pulse A) into the reaction chamber. Step 2104(i) is followed by a first purge period (purge A) in step 2104(ii). Step 2104(ii) is followed by a period of time, namely step 2104(iii), during which the precursor vapor of the second precursor is pulsed (pulse B) into the reaction chamber. Step 2104(iii) is followed by the first purge period (purge B) in step 2104(iv). These processes are repeated cyclically for half a complete deposition sequence. The reaction chamber cover is then removed, and substrate(s) are removed from the reaction chamber, rotated 180 degrees outside the reaction chamber, and returned to the reaction chamber (step 2105). Thereafter, the second half of the deposition cycle is performed (step 2106). Once the deposition process is complete (by repeating the process cycle to complete the deposition sequence to obtain the desired thickness of the deposited material), the reaction chamber cover is opened, and substrate(s) are removed from the reaction chamber by conveying the substrate holder to the loading position (which may occur simultaneously in steps 2107 and 2108). Finally, in step 2109, the loading robot unloads substrate(s) from the substrate holder (under vacuum).

[0185] The 180-degree rotation during processing is implemented, for example, by rotating another module that transfers the substrate to the deposition apparatus or cluster. In some embodiments, this other module includes a rotation mechanism, such as an indexing mechanism. Thus, in some embodiments, this other module may be a heating module 1930 or a similar module. In some other embodiments, the 180-degree rotation is performed by a loading robot. In such embodiments, the loading robot receives one or more substrates from a substrate holder (at the loading position), rotates one or more substrates by 180 degrees, and returns one or more substrates to the substrate holder (for subsequent transfer to the reaction chamber for further processing). The loading robot may be part of a robotic system such as a transfer unit 1920 or the like.

[0186] In some embodiments, the TiO2 film is deposited from a titanium-containing precursor (TiCl4) and an oxygen-containing precursor (H2O or O3), and it has been observed that when the substrate (sample) is rotated 180 degrees midway through deposition, the film uniformity is improved compared to the unrotated sample.

[0187] Without limiting the scope and interpretation of the patent claims, some technical effects of one or more exemplary embodiments disclosed herein are listed below. One technical effect is the avoidance of deposition defects caused by irregular deposition rates on substrates in a stack (caused by potential inhomogeneities and / or turbulent behavior of the precursor stream flow between substrates), which is common in conventional chemical deposition reactors. Another technical effect is more uniform film deposition using non-ideal ALD chemicals.

[0188] Various embodiments have been presented. It should be understood that in this document, the terms "comprise", "include" and "contain" are used as open-ended expressions and are not exclusive.

[0189] The foregoing description has provided a complete and informative description of the best mode of carrying out the invention as currently contemplated by the inventors, through non-limiting examples of specific implementations and embodiments. However, it will be apparent to those skilled in the art that the invention is not limited to the details of the embodiments given above, but can be implemented in other embodiments using equivalent means or in different combinations of embodiments without departing from the spirit of the invention.

[0190] Furthermore, some features of the exemplary embodiments disclosed above can be used advantageously without the need for corresponding use of other features. Therefore, the foregoing description should be considered merely as an illustration of the principles of the invention, and not as a limitation thereof. Consequently, the scope of the invention is limited only by the appended claims.

Claims

1. A substrate processing system (1900), comprising: The receiving module (1910) is configured to load the substrate (130) into the substrate processing system (1900) and unload the substrate (130) from the substrate processing system (1900). At least one processing module (1950) is configured to process the substrate (130) using a continuous self-limiting surface reaction, the at least one processing module (1910) including a laminar flow reaction chamber (120) and a substrate lifting system (500) configured to transfer the substrate (130) between a loading position and a processing position in a direction perpendicular to the surface of the substrate. as well as The transfer unit (1910) includes a robotic system configured to transfer the substrate (130) between the receiving module and the at least one processing module.

2. The substrate processing system (1900) according to claim 1, wherein the receiving module (1910) includes one or more front-opening wafer cassettes and device front-end modules.

3. The substrate processing system (1900) according to any one of the preceding claims, wherein the transfer unit (1920) includes an automated robot loading system.

4. The substrate processing system (1900) according to any one of the preceding claims, comprising a heating module (1930).

5. The substrate processing system (1900) according to claim 4 is configured to heat the substrate (130) in the heating module (1930) before the substrate is transferred to the processing module (1950) for processing.

6. The substrate processing system (1900) according to any one of the preceding claims, comprising a cooling module (1940).

7. The substrate processing system (1900) according to any one of the preceding claims, wherein processing the substrate (130) includes transferring the substrate (130) from the processing module (1950) to the heating module (1930) for heating the substrate between substrate processing cycles in the processing module (1950).

8. The substrate processing system (1900) according to any one of the preceding claims is configured to, after a processing cycle or processing stage, transfer the substrate (130) from the processing module (1950) to another module, rotate it 180 degrees and return it to the processing module (1950) for further processing.

9. The substrate processing system (1900) according to claim 8, wherein the other module is a heating module (1930).

10. The substrate processing system (1900) according to any one of claims 1-7, wherein the substrate lifting system (500) is a liftable substrate rotation system configured to rotate the substrate (130) at the processing position.

11. The substrate processing system (1900) according to any one of claims 1-7, wherein the at least one processing module (1950) includes a liftable substrate rotation system (500) configured to move the substrate (130) between a loading position and a processing position, and to rotate the substrate (130) in a laminar flow within the reaction chamber (120) of the at least one processing module (1950).

12. The substrate processing system (1900) according to any one of the preceding claims includes an indexing mechanism for rotating one or more substrates.

13. A method for processing a substrate in a substrate processing system (1900), the method comprising: One or more substrates (130) are received by the receiving module (1910). One or more substrates are transferred to the processing module (1950). One or more substrates (130) are conveyed to a processing location in a direction perpendicular to the substrate surface for processing in a layered precursor stream; After processing, the one or more substrates (130) are transferred to the loading position in a direction perpendicular to the substrate surface; The one or more substrates (130) are rotated 180 degrees outside the processing module (1950); as well as The one or more substrates (130) are returned to the processing module (1950) for further processing in the layered precursor stream.

14. The method of claim 13, further comprising heating the substrate before transferring the substrate to the processing module (1950).

15. The method according to claim 13 or 14, wherein the rotation of the one or more substrates (130) outside the processing module (1950) by 180 degrees is performed in the heating module (1930).

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