Electrochemical cell

By designing a waveform outer edge structure for the gas diffusion layer in an electrochemical single cell, the stress caused by thermal expansion is dispersed, thus solving the problem of gas diffusion layer peeling and improving the stability and lifespan of the electrochemical single cell.

CN120936756APending Publication Date: 2025-11-11NGK INSULATORS LTD
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Patent Information

Application Number
CN202380013561.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-03-30
Publication Date
2025-11-11

AI Technical Summary

Technical Problem

In existing electrochemical single cells, the difference in thermal expansion coefficients between the metal support and the main body of the single cell causes stress between the gas diffusion layer and the metal support, which may lead to the delamination of the gas diffusion layer.

Method used

Design an electrochemical single cell structure in which the outer edge of the gas diffusion layer adopts an alternating continuous wave shape of mountains and valleys. In the top view, the mountains are curved and protruding, and the valleys are curved and concave. The distance between the outermost peripheral connecting hole and the valley is shorter than the distance between the apex of the mountain and the valley. The second vertical line intersects with the inner connecting hole to disperse stress and alleviate the stress caused by thermal expansion.

Benefits of technology

It effectively suppressed the stripping of the gas diffusion layer, improving the stability and lifespan of the electrochemical single cell.

✦ Generated by Eureka AI based on patent content.

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Abstract

The electrolytic single cell (1) comprises a metal support (10) and a single cell body (20). The single cell body (20) has a gas diffusion layer (5) disposed on a first main surface (12) of the metal support (10). In a top view of the first main surface (12) of the metal support (10), at least a portion of the outer edge (5a) of the gas diffusion layer (5) is a wave shape with alternating ridges (51) and valleys (52).
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Description

Technical Field

[0001] This invention relates to electrochemical single cells. Background Technology

[0002] Previously, electrochemical single cells (electrolytic single cells, fuel cells, etc.) having a single cell body disposed on a metal support were known. The metal support had multiple connecting holes formed on its main surface. The single cell body had a first electrode layer formed on the main surface of the metal support; a second electrode layer; and an electrolyte layer disposed between the first electrode layer and the second electrode layer.

[0003] Here, Patent Document 1 describes inserting a conductive gas diffusion layer between the main body of the single cell and the metal support.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: International Patent Application Publication No. 2021 / 221052 Summary of the Invention

[0007] However, in the electrochemical single cell described in Patent Document 1, stress is generated between the metal support and the gas diffusion layer due to the difference in thermal expansion coefficients between the metal support and the main body of the single cell, which may cause the gas diffusion layer to peel off.

[0008] The objective of this invention is to provide an electrochemical single cell capable of suppressing the stripping of the gas diffusion layer.

[0009] The electrochemical single cell according to a first aspect of the present invention comprises: a metal support having a plurality of through holes formed on a main surface; and a single cell body disposed on the main surface. The single cell body comprises: a conductive gas diffusion layer disposed on the main surface; a first electrode layer disposed on the gas diffusion layer; a second electrode layer; and an electrolyte layer disposed between the first electrode layer and the second electrode layer. In a top view of the main surface, at least a portion of the outer edge of the gas diffusion layer has an alternating wave shape of ridges and valleys.

[0010] The second aspect of the present invention relates to an electrochemical single cell that, based on the first aspect described above, in a top view of the main surface, the mountain portion protrudes in a curved manner away from the plurality of connecting holes, and in a top view of the main surface, the valley portion is recessed in a curved manner close to the plurality of connecting holes.

[0011] The electrochemical single cell according to the third aspect of the present invention, based on the second aspect described above, has an arrangement in the top view of the main surface where the distance between the outermost peripheral connecting hole located at the outermost end in the face direction of the plurality of connecting holes and the valley bottom point of the valley is shorter than the distance between the outermost peripheral connecting hole and the apex of the mountain.

[0012] The electrochemical single cell according to the fourth aspect of the present invention, based on the third aspect described above, has the second vertical line intersecting with the inner connecting hole arranged in a row inside the outermost connecting hole in the top view of the main surface.

[0013] Invention Effects

[0014] According to the present invention, an electrochemical single cell capable of suppressing the stripping of the gas diffusion layer can be provided. Attached Figure Description

[0015] Figure 1 This is a plan view of the electrolytic single cell involved in the implementation method.

[0016] Figure 2 yes Figure 1 A-A cross-sectional view.

[0017] Figure 3 This is a plan view showing the state of the electrolytic single cell according to the embodiment with the hydrogen electrode layer, electrolyte layer, anti-reaction layer and oxygen electrode layer removed.

[0018] Figure 4 yes Figure 3 A magnified view of a portion of the image. Detailed Implementation

[0019] (Electrolytic single cell 1)

[0020] Figure 1 This is a plan view of the electrolytic single cell 1 involved in the implementation method. Figure 2 yes Figure 1 A-A cross-sectional view.

[0021] Electrolytic cell 1 is an example of the "electrochemical single cell" involved in this invention. Electrolytic cell 1 is a so-called metal-supported electrolytic cell.

[0022] The single electrolytic cell 1 is formed as a plate extending in both the X-axis and Y-axis directions. In this embodiment, the single electrolytic cell 1 is formed as a rectangle extending along the Y-axis direction when viewed from above in the Z-axis direction, which is perpendicular to both the X-axis and Y-axis directions. However, the planar shape of the single electrolytic cell 1 is not particularly limited and can be a polygon, ellipse, circle, etc., other than a rectangle.

[0023] like Figure 2As shown, the electrolytic single cell 1 includes: a metal support 10, a single cell body 20, and a flow path component 30.

[0024] [Metal Support 10]

[0025] The metal support 10 supports the main body 20 of the single battery. The metal support 10 is formed in the shape of a plate. The metal support 10 can be flat or curved.

[0026] The metal support 10 only needs to support the main body 20 of the single battery, and its thickness is not particularly limited. For example, it can be more than 0.1 mm and less than 2.0 mm.

[0027] like Figure 2 As shown, the metal support 10 has: multiple connecting holes 11, a first main surface 12 and a second main surface 13.

[0028] Each connecting hole 11 extends from the first main surface 12 to the second main surface 13 through the metal support 10. Each connecting hole 11 is open on both the first main surface 12 and the second main surface 13. In this embodiment, the opening on the first main surface 12 side of each connecting hole 11 is covered by the gas diffusion layer 5 described later. The opening on the second main surface 13 side of each connecting hole 11 is connected to the flow path 30a described later.

[0029] Each connecting hole 11 can be formed by machining (e.g., stamping), laser processing, or chemical processing (e.g., etching).

[0030] In this embodiment, each connecting hole 11 is formed in a straight line along the Z-axis direction. However, each connecting hole 11 may also be inclined relative to the Z-axis direction, or may not be straight. In addition, the connecting holes 11 may be connected to each other.

[0031] The first main surface 12 is an example of the "main surface" of the present invention. The first main surface 12 is disposed on the opposite side of the second main surface 13. A single battery body portion 20 is disposed on the first main surface 12. A flow path component 30 is joined to the second main surface 13.

[0032] The metal support 10 is made of a metallic material. For example, the metal support 10 is made of an alloy material containing Cr (chromium). Examples of such metallic materials include Fe-Cr alloy steel (stainless steel, etc.) or Ni-Cr alloy steel. There is no particular limitation on the Cr content in the metal support 10, and it can be 4% by mass or more and 30% by mass or less.

[0033] The metal support 10 may contain Ti (titanium) or Zr (zirconium). There is no particular limitation on the Ti content in the metal support 10; it can be 0.01 mol% or more and 1.0 mol% or less. There is no particular limitation on the Al content in the metal support 10; it can be 0.01 mol% or more and 0.4 mol% or less. The metal support 10 may contain Ti in the form of TiO2 (titanium dioxide) or Zr in the form of ZrO2 (zirconium oxide).

[0034] The metal support 10 may have an oxide film on its surface formed by the oxidation of the constituent elements of the metal support 10. A chromium oxide film is a representative example of such an oxide film. The chromium oxide film covers at least a portion of the surface of the metal support 10. Additionally, the chromium oxide film may cover at least a portion of the inner wall surface of each connecting hole 11.

[0035] [Single battery body part 20]

[0036] The main body 20 of a single battery is disposed on a metal support 10. The main body 20 of the single battery is supported by the metal support 10. The main body 20 of the single battery includes: a gas diffusion layer 5, a hydrogen electrode layer 6 (cathode), an electrolyte layer 7, an anti-reaction layer 8, and an oxygen electrode layer 9 (anode).

[0037] The gas diffusion layer 5, hydrogen electrode layer 6, electrolyte layer 7, anti-reaction layer 8, and oxygen electrode layer 9 are stacked sequentially in the Z-axis direction, starting from the metal support 10 side. The gas diffusion layer 5, hydrogen electrode layer 6, electrolyte layer 7, and oxygen electrode layer 9 are mandatory components, while the anti-reaction layer 8 is optional.

[0038] [Gas Diffusion Layer 5]

[0039] A gas diffusion layer 5 is formed on the first main surface 12 of the metal support 10. The gas diffusion layer 5 is inserted between the metal support 10 and the hydrogen electrode layer 6. In this embodiment, the gas diffusion layer 5 covers each of the connecting holes 11 of the metal support 10. A portion of the gas diffusion layer 5 can enter the inside of each of the connecting holes 11 of the metal support 10.

[0040] The gas diffusion layer 5 is a porous body with gas diffusion and electrical conductivity. The gas diffusion layer 5 supplies the raw material gas supplied from each connecting hole 11 to the hydrogen electrode layer 6, and discharges the generated gas generated in the hydrogen electrode layer 6 to each connecting hole 11.

[0041] The gas diffusion layer 5 contains a conductive material. The conductive material can be a metallic material such as Ni (nickel) or Fe (iron), or a conductive ceramic material.

[0042] The gas diffusion layer 5 may include a substrate supporting the conductive material. The substrate may be insulating. Suitable substrates include YSZ, CSZ, ScSZ, GDC, SDC, (La,Sr)(Cr,Mn)O3, (La,Sr)TiO3, Sr2(Fe,Mo)2O6, (La,Sr)VO3, (La,Sr)FeO3, LDC (lanthanum-doped cerium oxide), LSGM (lanthanum gallate), and mixed materials combining two or more of these materials.

[0043] The gas diffusion layer 5 may contain the same metal elements as the metal support 10. This improves the adhesion between the gas diffusion layer 5 and the metal support 10, which is preferable. It should be noted that the conductive material described above differs from the metal elements contained in the metal support 10. Therefore, the conductive material contained in the gas diffusion layer 5 may not be present in the metal support 10.

[0044] There are no particular restrictions on the porosity of the gas diffusion layer 5; for example, it can be above 20% and below 40%.

[0045] The porosity of the gas diffusion layer 5 was calculated using the following method. First, a cross-section of the gas diffusion layer 5 along the Z-axis was exposed. Next, a backscattered electron image of the cross-section of the gas diffusion layer 5 was acquired at 10,000x magnification using a SEM apparatus (FE-SEM JSM-7900F manufactured by Nippon Electron Ltd.). Then, Image-Pro image analysis software manufactured by MEDIACYBERNETICS was used to identify the areas shown in black in the backscattered electron image (corresponding to pores). Finally, the total area of ​​the pores was divided by the total area of ​​the backscattered electron image of the gas diffusion layer 5 to calculate the porosity of the gas diffusion layer 5.

[0046] The thickness of the gas diffusion layer 5 is not particularly limited; for example, it can be 1 μm or more and 50 μm or less. In this specification, thickness refers to the thickness in the thickness direction of the single-cell body 20. The thickness direction is the direction perpendicular to the plane direction parallel to the first principal surface 12 of the metal support 10. When determining the thickness direction, in the cross-section of the metal support 10 along the Z-axis direction, an approximate straight line of the first principal surface 12 obtained using the least squares method is used.

[0047] There are no particular restrictions on the method for forming the gas diffusion layer 5. It can be formed by firing, spraying (spraying, aerosol deposition, aerosol vapor deposition, powder spraying deposition, particle spraying deposition, cold spraying, etc.), PVD (sputtering, pulsed laser deposition, etc.), CVD, etc.

[0048] [Hydrogen Polar Layer 6]

[0049] The hydrogen electrode layer 6 is an example of the "first electrode layer" of the present invention. The hydrogen electrode layer 6 is formed on the gas diffusion layer 5. The hydrogen electrode layer 6 is disposed between the gas diffusion layer 5 and the electrolyte layer 7.

[0050] The feed gas is supplied to the hydrogen electrode layer 6 through the gas diffusion layer 5 via the connecting holes 11. The feed gas contains at least H2O.

[0051] When the feed gas contains only H2O, the hydrogen electrode 6 generates H2 from the feed gas according to the electrochemical reaction of water electrolysis given by equation (1) below.

[0052] Hydrogen electrode layer 6: H2O + 2e - →H2+O 2- ···(1)

[0053] When the feed gas contains H2O and CO2, the hydrogen electrode layer 6 undergoes a co-electrolysis electrochemical reaction according to the following equations (2), (3), and (4), generating H2, CO, and O from the feed gas. 2- .

[0054] Hydrogen electrode layer 6: CO2 + H2O + 4e - →CO + H₂ + 2O 2- ···(2)

[0055] Electrochemical reaction of H2O: H2O + 2e - →H2+O 2- ···(3)

[0056] • Electrochemical reaction of CO2: CO2 + 2e - →CO+O 2- ···(4)

[0057] The hydrogen electrode layer 6 is a porous body with gas diffusion and electrical conductivity. The feed gas is supplied to the hydrogen electrode layer 6 from the gas diffusion layer 5. The generated gas produced in the hydrogen electrode layer 6 is discharged towards the gas diffusion layer 5.

[0058] The hydrogen electrode layer 6 contains a conductive material. This conductive material can be a metallic material such as Ni (nickel) or Fe (iron), or a conductive ceramic material. In the case of co-electrolysis, Ni also functions as a thermal catalyst, promoting the thermal reaction between the generated H2 and the CO2 contained in the feed gas, thus maintaining a suitable gas composition for metallization or reverse aqueous gas transfer reactions.

[0059] The conductive material exists as an oxide (e.g., NiO) in an oxidizing atmosphere and as a metal (e.g., Ni) in a reducing atmosphere. In this embodiment, it is assumed that the electrolytic cell 1 is exposed to a reducing atmosphere.

[0060] The hydrogen electrode layer 6 contains an oxide ion-conducting material. As an oxide ion-conducting material, YSZ, CSZ, ScSZ, GDC, SDC, (La,Sr)(Cr,Mn)O3, (La,Sr)TiO3, Sr2(Fe,Mo)2O6, (La,Sr)VO3, (La,Sr)FeO3, LDC, LSGM, and hybrid materials obtained by combining two or more of these materials can be used.

[0061] In this embodiment, the hydrogen electrode layer 6 is a single-layer structure composed of a single component; however, it can also be a multi-layer structure composed of different components.

[0062] There is no particular limitation on the porosity of the hydrogen electrode layer 6; for example, it can be above 20% and below 40%. The porosity of the hydrogen electrode layer 6 is calculated in the same way as that of the gas diffusion layer 5 described above, by dividing the total area of ​​the pores by the total area of ​​the backscattered electron image of the hydrogen electrode layer 6.

[0063] There are no particular limitations on the thickness of the hydrogen electrode layer 6; for example, it can be greater than 1 μm and less than 500 μm.

[0064] There are no particular restrictions on the method of forming the hydrogen electrode layer 6; methods such as sintering, spraying, PVD, and CVD can be used.

[0065] [Electrolyte layer 7]

[0066] Electrolyte layer 7 is disposed between hydrogen electrode layer 6 and oxygen electrode layer 9. In this embodiment, an anti-reaction layer 8 is disposed between electrolyte layer 7 and oxygen electrode layer 9, therefore, electrolyte layer 7 is sandwiched between hydrogen electrode layer 6 and anti-reaction layer 8.

[0067] The electrolyte layer 7 covers the hydrogen electrode layer 6 and also covers the area of ​​the first main surface 12 of the metal support 10 exposed by the gas diffusion layer 5.

[0068] Electrolyte layer 7 allows O generated in hydrogen electrode layer 6 to pass through. 2- It is transferred to the oxygen electrode layer 9 side. The electrolyte layer 7 is made of a dense material with oxide ion conductivity. The electrolyte layer 7 can be made of, for example, YSZ (yttrium-stabilized zirconium oxide, such as 8YSZ), GDC (gadolinium-doped cerium oxide), ScSZ (scandium-stabilized zirconium oxide), SDC (samarium-solution cerium oxide), LSGM (lanthanum gallium oxide), etc.

[0069] There are no particular limitations on the porosity of the electrolyte layer 7; for example, it can be above 0.1% and below 7%. There are no particular limitations on the thickness of the electrolyte layer 7; for example, it can be above 1 μm and below 100 μm.

[0070] There are no particular restrictions on the method of forming the electrolyte layer 7; methods such as sintering, spraying, PVD, and CVD can be used.

[0071] [Anti-reaction layer 8]

[0072] An anti-reaction layer 8 is disposed between the electrolyte layer 7 and the oxygen electrode layer 9. The anti-reaction layer 8 is positioned on the opposite side of the hydrogen electrode layer 6, with the electrolyte layer 7 as the reference. The anti-reaction layer 8 inhibits the formation of a layer with high electrical resistance due to the reaction between the constituent elements of the electrolyte layer 7 and the constituent elements of the oxygen electrode layer 9.

[0073] The anti-reaction layer 8 is made of an oxide ion-conducting material. The anti-reaction layer 8 can be composed of GDC, SDC, etc.

[0074] There are no particular limitations on the porosity of the anti-reaction layer 8; for example, it can be 0.1% or more and less than 50%. There are no particular limitations on the thickness of the anti-reaction layer 8; for example, it can be 1 μm or more and less than 50 μm.

[0075] There are no particular restrictions on the method of forming the anti-reaction layer 8; methods such as firing, spraying, PVD, and CVD can be used.

[0076] [Oxygen layer 9]

[0077] The oxygen electrode layer 9 is an example of the "second electrode layer" of the present invention. The oxygen electrode layer 9 is disposed on the opposite side of the hydrogen electrode layer 6, with the electrolyte layer 7 as a reference. In this embodiment, an anti-reaction layer 8 is disposed between the electrolyte layer 7 and the oxygen electrode layer 9; therefore, the oxygen electrode layer 9 is connected to the anti-reaction layer 8. Without the anti-reaction layer 8 disposed between the electrolyte layer 7 and the oxygen electrode layer 9, the oxygen electrode layer 9 is connected to the electrolyte layer 7.

[0078] The oxygen electrode layer 9 undergoes a chemical reaction according to the following formula (5), where O is transferred from the hydrogen electrode layer 6 via the electrolyte layer 7. 2- To generate O2.

[0079] ·Oxygen layer 9:2O 2- →O2+4e - ···(5)

[0080] The oxygen electrode layer 9 is a porous body with oxide ion conductivity and electrical conductivity. The oxygen electrode layer 9 can be composed of a composite material of one or more of the following: (La,Sr)(Co,Fe)O3, (La,Sr)FeO3, La(Ni,Fe)O3, (La,Sr)CoO3, and (Sm,Sr)CoO3, and an oxide ion conductivity material (GDC, etc.).

[0081] There are no particular limitations on the porosity of the oxygen electrode layer 9, for example, it can be above 20% and below 60%. There are no particular limitations on the thickness of the oxygen electrode layer 9, for example, it can be above 1 μm and below 100 μm.

[0082] There are no particular restrictions on the method of forming the oxygen electrode layer 9; methods such as firing, spraying, PVD, and CVD can be used.

[0083] [Flow path component 30]

[0084] The flow path component 30 is joined to the second main surface 13 of the metal support 10. The flow path component 30 forms a flow path 30a between itself and the metal support 10. A raw material gas is supplied to the flow path 30a. The raw material gas supplied to the flow path 30a is supplied to the hydrogen electrode layer 6 of the single cell body 20 through the connecting holes 11 of the metal support 10.

[0085] The flow path component 30 can be made of, for example, an alloy material. The flow path component 30 can also be formed of the same material as the metal support 10. In this case, the flow path component 30 can be substantially integrated with the metal support 10.

[0086] The flow path component 30 has a frame 31 and an interconnector 32. The frame 31 is an annular component that surrounds the sides of the flow path 30a. The frame 31 is joined to the second main surface 13 of the metal support 10. The interconnector 32 is a plate-shaped component for connecting an external power source or other electrolytic cells in series with the electrolytic cell 1. The interconnector 32 is joined to the frame 31.

[0087] In this embodiment, the frame 31 and the interconnector 32 are separate components; however, the frame 31 and the interconnector 32 can be an integral component.

[0088] (Planar shape of gas diffusion layer 5)

[0089] Figure 3 This is a plan view of an electrolytic single cell 1 with the hydrogen electrode layer 6, electrolyte layer 7, anti-reaction layer 8, and oxygen electrode layer 9 removed from the single cell body 20. Figure 4 yes Figure 3 A magnified view of a portion of the image.

[0090] like Figure 3 As shown in the top view of the first main surface 12 of the single battery body 20, the gas diffusion layer 5 covers the plurality of connecting holes 11 of the metal support 10. In this embodiment, the planar shape of the gas diffusion layer 5 is generally rectangular, but it is not limited thereto. The planar shape of the gas diffusion layer 5 can be appropriately modified taking into account the planar shape of the single battery body 20 or the planar shape of the region where the plurality of connecting holes 11 are formed.

[0091] like Figure 4As shown, the metal support 10 has a plurality of connecting holes 11 arranged in a houndstooth pattern. This allows for a simple increase in the density of the connecting holes 11. However, the arrangement of the connecting holes 11 can be modified as appropriate.

[0092] like Figure 4 As shown in the top view of the first main surface 12, the outer edge 5a of the gas diffusion layer 5 has an alternating wave shape of mountain sections 51 and valley sections 52. Accordingly, when stress is generated between the metal support 10 and the gas diffusion layer 5 due to the difference in thermal expansion coefficients between the metal support 10 and the single-cell main body 20, the stress applied to the outer edge 5a can be dispersed in the planar direction. Furthermore, compared to the case where the outer edge 5a is a straight line, the total length of the outer edge 5a can be increased. As a result, the stress applied to the outer edge 5a is alleviated, and therefore, the peeling of the gas diffusion layer 5 from the metal support 10 can be suppressed.

[0093] It should be noted that in this embodiment, such as Figure 3 As shown, the outer edge 5a is generally wavy; however, at least a portion of the outer edge 5a of the gas diffusion layer 5 may be wavy. Even in this case, the wavy region of the outer edge 5a can suppress the peeling of the gas diffusion layer 5 from the metal support 10 as described above. Therefore, a portion of the outer edge 5a may be straight.

[0094] In this embodiment, such as Figure 4 As shown, the mountain portion 51 of the outer edge 5a protrudes in a curved shape away from the connecting hole 11, and the valley portion 52 of the outer edge 5a is concave in a curved shape close to the connecting hole 11. That is, the outer edge 5a has a curved wave shape. Accordingly, compared with the case where the outer edge 5a has a straight wave shape (serrated), the stress applied to the outer edge 5a can be further dispersed in the planar direction, and the total length of the outer edge 5a can be longer. As a result, the stress applied to the outer edge 5a can be further alleviated, and therefore, the peeling of the gas diffusion layer 5 from the metal support 10 can be further suppressed.

[0095] Here, the metal support 10 has multiple connecting holes 11, which interrupt the in-plane heat conduction of the metal support 10, thus easily generating a temperature distribution in the metal support 10. Furthermore, during the operation of the electrolytic cell 1, the main body 20 of the cell absorbs and releases heat; on the other hand, heat transfer occurs through heating or cooling towards the main body 20, thus easily generating a temperature distribution on the outer periphery of the main body 20. Specifically, in the top view of the first main surface 12, a larger temperature distribution is easily generated on the inner and outer sides of the outermost connecting holes 11 of the metal support 10, resulting in a larger difference in the amount of expansion and contraction due to thermal expansion. Therefore, the metal support 10 does not deform isotropically near the outermost connecting holes 11. Consequently, stress easily occurs between the metal support 10 and the outer edge 5a of the gas diffusion layer 5, near the outermost connecting holes 11. It should be noted that the connecting hole 11 arranged on the outermost periphery is: the connecting hole 11 located at the outermost end in the surface direction (X-axis direction or Y-axis direction) among the multiple connecting holes 11.

[0096] Therefore, in this embodiment, as Figure 4 As shown, in the top view of the first main surface 12, the outermost connecting holes 11 (hereinafter referred to as "outermost connecting holes 11a") are positioned in the same location as the valley 52. ​​Specifically, a first perpendicular line M1, perpendicular to the first tangent L1 that contacts the valley floor 52b and passing through the valley floor 52b, intersects the outermost connecting holes 11a. Furthermore, a second perpendicular line M2, perpendicular to the second tangent L2 that contacts the apex 51a of the mountain 51 and passing through the apex 51a, does not intersect the outermost connecting holes 11a.

[0097] Accordingly, compared to the case where the position of the outermost peripheral connecting hole 11a coincides with the position of the hill 51, the outer edge 5a of the gas diffusion layer 5 can be brought closer to the outermost peripheral connecting hole 11a. Therefore, the stress applied to the outer edge 5a due to the deformation of the metal support 10 near the outermost peripheral connecting hole 11a can be further alleviated. Accordingly, the peeling of the gas diffusion layer 5 from the metal support 10 can be further suppressed.

[0098] In this embodiment, such as Figure 4 As shown in the top view of the first main surface 12, the position of the connecting hole 11 (hereinafter referred to as "inner connecting hole 11b"), which is located one row inside the outermost connecting hole 11a, coincides with the position of the mountain 51. Specifically, the second perpendicular line M2 passing through the apex 51a of the mountain 51 intersects the inner connecting hole 11b. Furthermore, the first perpendicular line M1 passing through the valley bottom point 52b of the valley 52 does not intersect the inner connecting hole 11b.

[0099] It should be noted that "inner side" of the inner connecting hole 11b means: in the direction parallel to the second vertical line M2, it is located on the opposite side of the outer edge 5a with the position of the outermost connecting hole 11a as a reference.

[0100] In a direction parallel to the first perpendicular line M1, the distance D1 between the outermost connecting hole 11a and the valley bottom point 52b of the valley 52 is shorter than the distance D2 between the outermost connecting hole 11a and the peak 51a of the mountain 51. Distance D1 is the shortest distance between the outermost connecting hole 11a and the valley bottom point 52b in a direction parallel to the first perpendicular line M1. Distance D2 is the shortest distance between the outermost connecting hole 11a and the peak 51a in a direction parallel to the first perpendicular line M1.

[0101] In a direction parallel to the first perpendicular line M1, the distance D3 between the inner connecting hole 11b and the apex 51a of the mountain 51 is longer than the distance D2 between the outermost connecting hole 11a and the apex 51a of the mountain 51. The distance D3 is the shortest distance between the inner connecting hole 11b and the apex 51a in a direction parallel to the first perpendicular line M1.

[0102] The value of interval D1 is not particularly limited; for example, it can be greater than 0.20 mm and less than 1.0 mm. The value of interval D2 is not particularly limited; for example, it can be greater than 0.25 mm and less than 2.0 mm. The value of interval D3 is not particularly limited; for example, it can be greater than 0.50 mm and less than 3.0 mm.

[0103] The value of the interval D4 between vertices 51a in the direction parallel to the first tangent L1 is not particularly limited; for example, it can be greater than 0.20 mm and less than 5.0 mm.

[0104] The value of the interval D5 between the valley points 52b in the direction parallel to the first tangent line L1 is not particularly limited; for example, it can be greater than 0.20 mm and less than 5.0 mm.

[0105] (Modifications of the implementation method)

[0106] The embodiments of the present invention have been described above. However, the present invention is not limited to these embodiments, and various modifications can be made as long as they do not depart from the spirit of the present invention.

[0107] [Variation Example 1]

[0108] In the above embodiment, the openings on the first main surface 12 side of each connecting hole 11 of the metal support 10 are covered by the gas diffusion layer 5, but this is not a limitation. The gas diffusion layer 5 may not cover the openings on the first main surface 12 side of each connecting hole 11. In this case, since a through hole connected to each connecting hole 11 is formed in the gas diffusion layer 5, gas can be supplied and discharged more efficiently through the through hole.

[0109] [Variation Example 2]

[0110] In the above embodiment, the hydrogen electrode layer 6 functions as the cathode and the oxygen electrode layer 9 functions as the anode; however, the configuration of the hydrogen electrode layer 6 and the oxygen electrode layer 9 can be reversed.

[0111] [Variation Example 3]

[0112] In the above embodiments, an electrolytic single cell 1 was described as an example of an electrochemical single cell; however, electrochemical single cells are not limited to electrolytic single cells. An electrochemical single cell is a general term for an element having a pair of electrodes configured to generate an electromotive force through an overall redox reaction in order to convert electrical energy into chemical energy, and for elements used to convert chemical energy into electrical energy. Therefore, electrochemical single cells include, for example, fuel cells using oxide ions or protons as carriers.

[0113] Symbol Explanation

[0114] 1 Electrolytic single cell

[0115] 10 Metal Support

[0116] 11 connecting holes

[0117] 12 First Main Page

[0118] 13 Second Main Face

[0119] 20 Single Battery Body Section

[0120] 5 Gas diffusion layer

[0121] 5a outer edge

[0122] 51 Yamabe

[0123] 51a vertex

[0124] 52Tanibe

[0125] 52b valley bottom

[0126] 6-Hydrogen Polar Layer

[0127] 7 Electrolyte layer

[0128] 8 anti-reaction layers

[0129] 9 oxygen polar layers

[0130] 30 flow path components

[0131] 30a flow path

[0132] La First Tangent

[0133] Ma's first perpendicular line

[0134] Lb second tangent line

[0135] Mb second perpendicular line

Claims

1. An electrochemical single cell, wherein, have: A metal support having a plurality of connecting holes formed on a main surface; and A single-cell main body is disposed on the main surface. The main body of the single battery has: A conductive gas diffusion layer disposed on the main surface; A first electrode layer is disposed on the gas diffusion layer; Second electrode layer; as well as An electrolyte layer is disposed between the first electrode layer and the second electrode layer. In the top view of the main surface, at least a portion of the outer edge of the gas diffusion layer is a wave shape with alternating mountain and valley sections.

2. The electrochemical single cell according to claim 1, wherein, In the top view of the main surface, the mountain-shaped portion protrudes in a curved manner, away from the plurality of connecting holes. In the top view of the main surface, the valley is curved and recessed in an orientation close to the plurality of connecting holes.

3. The electrochemical single cell according to claim 2, wherein, In the top view of the main surface, a first perpendicular line perpendicular to the first tangent line that contacts the valley floor point and passes through the valley floor point intersects the outermost peripheral connecting hole located at the outermost end in the surface direction among the plurality of connecting holes. In the top view of the main surface, the second perpendicular line, which is perpendicular to the second tangent that contacts the vertex of the mountain and passes through the vertex, does not intersect the outermost peripheral connecting hole.

4. The electrochemical single cell according to claim 3, wherein, In the top view of the main surface, the second vertical line intersects with the inner connecting hole, which is arranged one row inside the outermost connecting hole.