Radiation separation system

Abstract

The present disclosure generally relates to a lamp heating apparatus for thermally treating a substrate. In particular, embodiments of the present disclosure relate to separating heating regions in a rapid thermal processing (RTP) chamber using a substrate and a shielding member. In one embodiment, a method of processing a substrate includes placing a substrate in a processing chamber on a plurality of lift bars, lifting the substrate with the plurality of lift bars to a pre-heat position coplanar with a flange of a radiation shield, pre-heating the substrate with heat from a plurality of lamps in the pre-heat position, the plurality of lamps is positioned above the substrate, lowers the substrate down to a substrate support with the lift bar after the pre-heating, processes the substrate on the substrate support, and removes the substrate from the processing chamber.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to an apparatus for lamp heating of a heat-treated substrate. Specifically, embodiments of this disclosure involve using a substrate and shielding components to separate the heating area in a rapid thermal processing (RTP) chamber. Background Technology

[0002] During rapid heat treatment of the substrate, the substrate is conveyed into and out of the RTP chamber. The temperature difference between the substrate entering the RTP chamber and the RTP chamber itself may cause thermal stress and uneven heating of the substrate.

[0003] Therefore, there is a need in the field of this invention for improved rapid heat treatment. Summary of the Invention

[0004] This disclosure generally relates to an apparatus for lamp heating of a heat-treated substrate. Specifically, embodiments of this disclosure relate to the use of a substrate and shielding components to separate the heating area within a rapid heat treatment (RTP) chamber.

[0005] In one embodiment, a method of processing a substrate includes placing the substrate in a processing chamber on a plurality of lifting rods, raising the substrate to a preheating position coplanar with a radiation shielding flange by the plurality of lifting rods, preheating the substrate in the preheating position with heat from a plurality of lamps positioned above the substrate, lowering the substrate down to a substrate support by the lifting rods after preheating, processing the substrate on the substrate support, and removing the substrate from the processing chamber.

[0006] In one embodiment, a processing chamber suitable for use in semiconductor manufacturing includes a chamber body, a window disposed on the chamber body, a substrate support disposed in the chamber body, a plurality of lamps disposed above the window for guiding heat energy toward the substrate support, and a radiation shield disposed between the window and the substrate support. The radiation shield includes a cylindrical main body comprising an opaque material and a flange comprising an optically transparent material, the flange being coupled to the cylindrical main body.

[0007] In one embodiment, a radiation shield suitable for placement in a processing chamber includes: a cylindrical main body comprising an opaque material and a flange extending from the distal end of the cylindrical main body, the flange comprising a transparent material and the flange being located in a plane orthogonal to the central axis of the cylindrical main body. Attached Figure Description

[0008] To gain a more detailed understanding of the features described above, reference can be made to embodiments of the present disclosure, some of which are illustrated in the accompanying drawings. However, it should be understood that the drawings illustrate only exemplary embodiments and should not be considered as limiting the scope, as other equivalent embodiments are permissible.

[0009] Figure 1A This is a schematic cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the substrate is in a preheated position.

[0010] Figure 1B This is a schematic cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein a substrate is in a processing position.

[0011] Figure 1C This is a schematic cross-sectional view of a processing chamber according to different embodiments of the present disclosure, wherein the substrate is in the processing position.

[0012] Figure 2A This is a schematic isometric view of radiation shielding according to an embodiment of the present disclosure.

[0013] Figure 2B It is a radiation shielding edge Figure 2A The cross-sectional view shown is a section line 2B-2B.

[0014] Figure 3 This is a schematic block diagram of a method for processing a substrate according to one embodiment.

[0015] For ease of understanding, the same reference numerals are used to denote common elements in the figures where possible. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0016] The embodiments of this disclosure generally relate to rapid heat treatment (RTP) chambers or other lamp-heated heat treatment chambers, and more specifically, to the shielding used therein. It should be understood that the term "about" as used herein refers to a range of plus or minus 5% of the stated value.

[0017] Figure 1A and Figure 1B This is a schematic cross-sectional view of a processing chamber 100 according to an embodiment of this disclosure. In some embodiments, the processing chamber 100 is an RTP chamber. In other embodiments, the processing chamber is any chamber suitable for use in semiconductor manufacturing. Figure 1A The processing chamber 100 of the substrate 110 in the preheating position is shown, while Figure 1BA processing chamber 100 is shown with the substrate 110 in a processing position. The processing chamber 100 includes a sidewall 102, a chamber bottom 104 coupled to the sidewall 102, and a window 106 disposed on the sidewall 102. In some embodiments, the window 106 is made of quartz. The sidewall 102 and the chamber bottom 104 form a chamber body. The sidewall 102, the chamber bottom 104, and the window 106 define an upper space 108 and a lower space 109 for processing the substrate 110 therein. The upper space 108 is fluidly coupled to the lower space 109 and is defined by a plane defined by the lower or bottom edge of the radiation shield 160.

[0018] A slit valve 116 is formed through the sidewall 102 for conveying the substrate 110 therethrough. The processing chamber 100 is coupled to a gas source 118 via a conduit 119. The gas source 118 is configured to supply one or more processing gases to the upper space 108 during processing. A vacuum pump 120 is coupled to the processing chamber 100 for evacuating the upper space 108.

[0019] A substrate positioning assembly 122 is disposed in the lower space 109 and configured to support, position, and / or rotate the substrate 110 during processing. The substrate positioning assembly 122 includes a substrate support 155, which may be a contact support such as a base, or a non-contact substrate support element that uses fluid flow to support, position, and / or rotate the substrate 110. The substrate positioning assembly 122 further includes an edge support 124 that supports the edge of the substrate 110 when the substrate 110 is in the processing position. The substrate positioning assembly 122 facilitates supporting the substrate 110 on the substrate support 155 and the edge support 124 located in the lower space 109 before the start of a process (e.g., rapid thermal annealing). The substrate positioning assembly 122 includes a plurality of lifting rods 150 (two shown) disposed in a lifting rod support 151a. The lifting rod 150 lifts the substrate 110 away from the substrate support 155 to facilitate the entry and exit of the substrate 110 through the slit valve 116 and to facilitate the transition of the substrate 110 from the preheating position (lifted from the substrate support 155) to the processing position (supported by the substrate support 155).

[0020] A heating assembly 112 is disposed above window 106 and configured to direct heat energy toward upper space 108 through window 106. The heating assembly 112 includes a plurality of lamps 114, such as high-voltage tungsten halogen lamps arranged in a hexagonal pattern and controllable in areas, to provide controlled heating to different areas of upper space 108. Each of the plurality of lamps 114 is inserted into a heating assembly base 117 for electrical connection to a power supply (not shown).

[0021] The radiation shield 160 is coupled to the sidewall 102 of the processing chamber 100 and secured thereto by one or more optional mounting members 161. The radiation shield 160 includes a plurality of cylindrical main bodies 162 defining a central opening, and flanges 163 extending radially outward from the bottom edge of the cylindrical main bodies 162. The cylindrical main bodies 162 have an inner diameter larger than that of the substrate 110, for example, such that the substrate 110 can be accommodated within the central opening defined by the main bodies. Figure 1A As shown. In some embodiments, the lateral gap between the substrate 110 and the inner diameter of the cylindrical main body 162 is between 0.1 mm and 2 mm, for example between 0.3 mm and 1.1 mm, for example about 1 mm. When the substrate 110 is flush with the bottom of the radiation shield 160 (e.g., coplanar with the flange 163), the upper space 108 and the lower space 109 are separated. In one example, the cylindrical main body 162 contacts the window 106.

[0022] Figure 1A The diagram shows a substrate 110 in a preheating (e.g., upper) position within the processing chamber 100. In the preheating position, the substrate 110 is raised by a lifting rod 150 of a substrate support 155 and positioned above the substrate support 155. The preheating position is... Figure 1B The substrate 110 is located above both the processing position and the transport position (i.e., the vertical height at which the substrate 110 is transported into the processing chamber 100) (e.g., at a greater elevation). The transport height is indicated by plane 167. In the preheating position, the substrate 110 is coplanar with the flange 163 of the radiation shield 160. In this position, the lamp 114 of the heating assembly 112 preheats the substrate 110 while blocking radiation from the lamp from directly heating the substrate support 155. For example, the flange 163 may be composed of materials that absorb radiation from the lamp 114. Similarly, the substrate 110 may also be configured to absorb radiation from the lamp 114. Therefore, when the substrate 110 is coplanar with the flange 163, radiation from the lamp 114 substantially prevents direct radiation to the substrate positioning assembly 122, and in particular the substrate support 155 of the substrate positioning assembly 122. Thus, the temperature of the substrate 110 can be increased, reducing the thermal effect on the substrate support 155. In some examples, the substrate 110 in the preheated position is positioned at a distance of about 3 mm to about 50 mm from the window 106, for example, about 5 mm to about 20 mm, such as about 5 mm to about 10 mm.

[0023] Figure 1BA substrate 110 is shown in a processing (e.g., lower) position within the processing chamber 100. In the processing position, a lifting rod 150 is lowered and recessed into a lifting rod support 151a, such that the substrate 110 is supported by a substrate support 155 and an edge support 124. The processing position is approximately below the transport height of the substrate 110 when it is conveyed via a slit valve 116. In the processing position, the substrate 110 undergoes a heat treatment process, such as rapid heat annealing. During the heat treatment, radiant energy from a lamp 114 heats the substrate to a predetermined temperature. A controller 130, operatively coupled to the processing chamber 100, controls one or more aspects of the heat treatment process, as well as the movement of the substrate, including movement between the transport, preheating, and processing positions, in addition to other aspects of the processing chamber 100.

[0024] Controller 130 includes a central processing unit (CPU), instruction-containing memory, and support circuitry for the CPU. Controller 130 controls various items directly or via other computers and / or controllers. In one or more embodiments, controller 130 is communicatively coupled to a dedicated controller, and controller 130 functions as a central controller.

[0025] Controller 130 is any form of general-purpose computer processor used in an industrial setting for controlling various substrate processing chambers and equipment, and subprocessors thereon or therein. Memory or non-transitory computer-readable media is one or more readily available types of memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, whether local or remote. Support circuitry of controller 130 is coupled to the CPU to support the CPU (processor). This support circuitry includes cache, power supply, frequency circuitry, input / output circuitry, and subsystems. Operating parameters (such as the temperature of substrate 110 and the power applied to lamp 114) are stored in memory as software routines, which are executed or called to transform controller 130 into a dedicated controller for controlling the operation of the various chambers / modules described herein. Controller 130 is configured to perform any of the operations described herein. Instructions stored in memory, when executed, perform one or more operations of method 300 (described below).

[0026] Figure 1C This is a schematic cross-sectional view of a processing chamber according to different embodiments of the present disclosure, wherein the substrate is in the processing position. Figure 1C Similar to Figure 1BHowever, the substrate support 155 and substrate positioning assembly 122 are replaced by an edge support 124. The edge support 124 is rotated by a rotation system 125. The reflector 156 is positioned below the substrate 110. The reflector 156 is attached to two lifting rod supports 151c. The reflector 156 reflects radiation from the lamp 114.

[0027] Figure 2A This is an isometric view of a radiation shield 160 according to an embodiment of the present disclosure. Figure 2B It is radiation shielding 160 along Figure 2A The cross-sectional view shown is along section line 2B-2B. The radiation shield 160 includes a cylindrical main body 162 and a flange 163 disposed in a plane orthogonal to the central axis 280 of the cylindrical main body 162. The cylindrical main body 162 is made of an opaque material, such as opaque quartz, blackbody quartz, polycrystalline silicon, tungsten, titanium, or silicon carbide. The opacity of the cylindrical main body 162 reduces radiation from the lamp 114 (…). Figure 1A and 1B The transmission of heat radiation (as shown in the diagram) through which the main body 162 is located. The cylindrical main body 162 has an outer radius between 180 mm and 200 mm, for example, between 185 mm and 195 mm, such as about 190 mm, to accommodate multiple lamps. The cylindrical main body 162 has an inner radius between 140 mm and 160 mm, for example, between 145 mm and 155 mm, such as about 150 mm, to accommodate the substrate 110. The flange 163 is made of an optically transparent material, such as quartz, sapphire, or fused silicon dioxide, and allows radiation from the lamp 114, or most of the radiation, to pass through it. The flange 163 has a thickness between 1 mm and 5 mm, for example, between 2 mm and 4 mm, such as about 3 mm. The cylindrical main body 162 is coupled to the flange 163. The flange 163 extends from the distal end of the cylindrical main body 162.

[0028] Figure 3 This is a schematic block diagram of a method 300 for processing a substrate according to one embodiment. (See reference) Figure 1A and Figure 1B To explain Figure 3 For ease of understanding, but it should be considered that the method described herein is also applicable to other processing chambers besides processing chamber 100. At operation 301, substrate 110 is placed in processing chamber 100 on lifting rod 150. The substrate is delivered to the chamber in a cold condition (e.g., at a temperature smaller than the internal space of the processing chamber, including substrate support 155).

[0029] At operation 303, the substrate 110 is raised by the lifting rod 150. The lifting rod 150 raises the substrate 110 to a preheated position coplanar with the flange 163 of the radiation shield 160. This divides the processing chamber 100 into an upper space 108 and a lower space 109. The substrate is preheated before contacting the substrate support 155.

[0030] At operation 305, substrate 110 is preheated. During preheating, lamp 114 irradiates substrate 110 to raise its temperature to the preheating temperature. The preheating temperature is between 290°C and 310°C, for example, between 295°C and 305°C, for example, about 300°C. The preheating time is between 10 and 20 seconds. Substrate 110 is heated at a rate of about 30°C / s. Because the substrate and radiation shield 160 block radiation from reaching the lower space and substrate support 155, radiation emitted by the lamp is prevented from reaching substrate support 155. Therefore, the temperature increase of substrate support is minimized. Substrate support 155 is substantially prevented from being heated during preheating.

[0031] The radiation shield 160 includes a cylindrical main body 162 formed of an opaque material. The opaque material reduces the propagation of heat radiation from lamps located within the inner diameter of the radiation shield through the cylindrical main body to locations radially outward of the main body (and into the lower portion of the processing chamber). Therefore, heat from lamp 114 is directed to the substrate 110 rather than the components of the processing chamber 100. The reduced heat radiation to the chamber components during preheating operations is attributed to improved temperature control and its uniformity, thus improving subsequent heat treatment because unwanted or unintended temperature rises are reduced. In this example, it is easier to maintain the processing temperature at a predetermined desired temperature, thereby improving substrate-to-substrate uniformity. In this example, consider a controller that can shut off lamps located outside the outer diameter of the cylindrical main body 162 to further reduce unintentional heating of the processing chamber components.

[0032] At operation 307, the substrate is lowered from the preheating position after preheating. The lifting rod 150 lowers the substrate to the substrate support 155 at the processing position. Due to the preheating operation, the temperature difference between the substrate 110 and the substrate support 155 is reduced. The temperature difference between the substrate 110 and the substrate support 155 is less than 50°C. This reduced temperature difference between the substrate 110 and the substrate support 155 reduces thermal shock to the substrate 110 and reduces unintended heat transfer between the substrate 110 (which is at an elevated temperature due to preheating) and the substrate support 155 (which is at an elevated temperature due to previous heat treatment occurring in the processing chamber 100).

[0033] At operation 309, for example, in a rapid thermal annealing operation, substrate 110 is processed. One or more processing gases may be supplied to the interior of the processing chamber, and one or more lamps 114 may be turned on to transfer thermal radiation to substrate 110 to facilitate its processing. Substrate 110 is processed on substrate support 155.

[0034] The presence of radiation shield 160 does not substantially interfere with the uniform processing of substrate 110. Due to the relative height and thickness of the cylindrical main body 162, and the relative spacing between substrate 110 and lamp 114 and / or window 106, the cylindrical main body 162 blocks minimal radiation. If any portion of window 106 is blocked by the cylindrical main body 162, the illumination field of the adjacent (uncovered) lamp 114 compensates for the blocked radiation. Furthermore, since flange 163 is substantially transmissible to radiation from lamp 114, flange 163 does not substantially interfere with thermal radiation from lamp 114.

[0035] At operation 311, after the processing in operation 309 is completed, the substrate 110 is removed from the substrate support 155 and taken out of the processing chamber 100. Due to the heat treatment that occurs during operation 309, the substrate support 155 is maintained at an elevated temperature relative to the incoming substrate 110. The above processing can be repeated on the incoming substrate 110 to reduce thermal shock to the incoming substrate 110.

[0036] Advantages of this disclosure include the creation of a gap between the radiation reaching the substrate support 155 to prevent the substrate support from becoming too hot. The substrate 110 is delivered into the processing chamber 100 in a cold state; therefore, if it comes into direct contact with the hot substrate support, the substrate will be subjected to thermal stress and shock. Preheating the substrate 110 results in faster heating and better uniformity, including better edge uniformity. Radiation shielding can also be used in different embodiments of the substrate 110 on the substrate support 155 to achieve different optical properties. This disclosure can be retrofitted into existing RTP chambers and other chambers. The simple design allows for inexpensive implementation.

[0037] It should be considered that one or more aspects disclosed herein can be combined. As an example, one or more aspects, features, components, operations, and / or characteristics of the processing chamber 100, substrate support 155, substrate 110, upper space 108, lower space 109, lifting rod 150, heating assembly 112, lamp 114, radiation shield 160, cylindrical main body 162, flange 163, and / or method 300 can be combined. Furthermore, it should be considered that one or more aspects disclosed herein may include some or all of the advantages described above.

[0038] While the foregoing describes an implementation of this disclosure, other and further implementations of this disclosure may be devised without departing from the basic scope of this disclosure, and the scope of this disclosure is determined by the appended claims.

Claims

1. A method for processing a substrate, the method comprising: The substrate is placed in the processing chamber on multiple lifting rods; The substrate is raised to a preheated position coplanar with the radiation shielding flange using the plurality of lifting rods; In the preheating position, the substrate is preheated with heat from a plurality of lamps positioned above the substrate. After the preheating, the substrate is lowered to the substrate support by the lifting rod; The substrate is processed on the substrate support; and Remove the substrate from the processing chamber.

2. The method for processing a substrate as claimed in claim 1, wherein the preheating position is approximately 5 mm to approximately 20 mm away from the window defining the processing space of the processing chamber.

3. The method for processing a substrate as claimed in claim 1, wherein the radiation shielding comprises: A cylindrical main body comprising an opaque material, the cylindrical main body being coupled to the flange, wherein... The flange contains an optically transparent material.

4. The method for processing a substrate as claimed in claim 3, wherein the opaque material includes opaque quartz, blackbody quartz, polycrystalline silicon, tungsten, titanium, or silicon carbide, and the optically transparent material includes quartz, sapphire, and molten silicon dioxide.

5. The method of processing a substrate as claimed in claim 1, wherein during the process of lowering the substrate to the substrate support, the substrate support and the substrate have a temperature difference of less than 50°C.

6. The method of processing a substrate as claimed in claim 1, wherein the preheating location is at an elevation greater than the loading or unloading height of the substrate.

7. The method of processing a substrate as claimed in claim 1, wherein the substrate is preheated before any contact with the substrate support in the processing chamber.

8. A processing chamber suitable for use in semiconductor manufacturing, the processing chamber comprising: Chamber body; A window, which is disposed on the chamber body; A substrate support member is disposed in the cavity body portion; Multiple lights are arranged above the window to guide heat energy toward the substrate support. and Radiation shielding is disposed between the window and the substrate support. The radiation shielding includes a cylindrical main body containing an opaque material and a flange containing an optically transparent material, the flange being coupled to the cylindrical main body.

9. The processing chamber of claim 8, wherein the cylindrical main body comprises black quartz.

10. The processing chamber of claim 8, wherein the cylindrical main body comprises opaque quartz.

11. The processing chamber of claim 8, wherein the flange comprises transparent quartz.

12. The processing chamber of claim 8, further comprising a plurality of lifting rods configured to position a substrate in at least three locations, wherein the at least three locations include: The preheating position is coplanar with the flange of the radiation shield; The conveying position is coplanar with the slit valve formed in the chamber body; and The processing location is located on top of the substrate support.

13. The processing chamber of claim 12, wherein the preheating position is above the conveying position and the processing position.

14. The processing chamber of claim 8, wherein the cylindrical main body has an outer radius between 180 mm and 200 mm.

15. The processing chamber of claim 8, wherein the cylindrical main body has an inner radius between 140 mm and 160 mm.

16. The processing chamber of claim 8, wherein the flange has a thickness between 1 mm and 5 mm.

17. A radiation shield suitable for installation in a processing chamber, the radiation shield comprising: A cylindrical main body, the cylindrical main body comprising an opaque material; and A flange extending from the distal end of the cylindrical main body, the flange comprising an optically transparent material, the flange being positioned in a plane orthogonal to the central axis of the cylindrical main body.

18. The radiation shielding of claim 17, wherein the opaque material of the cylindrical main body comprises opaque quartz, blackbody quartz, polycrystalline silicon, tungsten, titanium, or silicon carbide.

19. The radiation shielding of claim 17, wherein the optically transparent material of the flange comprises transparent quartz, sapphire, or molten silicon dioxide.

20. The radiation shielding of claim 17, wherein the cylindrical main body has an outer radius between 180 mm and 200 mm and an inner radius between 140 mm and 160 mm.

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