Surface light emitting device

Abstract

[Problem] To perform complex optical path control inside an element. [Solution] The surface-emitting element includes an active layer; a first mirror for reflecting light emitted by the active layer and propagating in the direction of the light-emitting surface; a second mirror for reflecting light emitted by the active layer and propagating in the direction opposite to the light-emitting surface; and an insulating film provided between the active layer and the first mirror and / or between the active layer and the second mirror, and wherein at least one of the film thickness and the refractive index is continuously or stepwise changed in the plane.

Description

Technical Field

[0001] This disclosure relates to a surface light-emitting device. Background Technology

[0002] Vertical cavity surface-emitting lasers (VCSELs) are surface-emitting devices formed through semiconductor processes, and their applications are highly anticipated in various fields such as optical detection and ranging (LiDAR).

[0003] In VCSELs, diffraction losses typically increase with decreasing aperture diameter, leading to a deterioration in the IL characteristics of current I and optical output L. Optical path control is one way to improve IL characteristics. However, for typical VCSELs, complex optical path control of the beam is difficult. Other instances of optical path control are challenging to implement, such as branching a beam from a VCSEL into multiple beams to create an element array, or focusing multiple beams into a single beam to achieve high output.

[0004] Mounting optical lenses externally to the VCSEL is conceivable as a specific way to achieve optical path control, but doing so increases the size of the device and leads to excessive manufacturing costs. Creating some kind of optical structure inside the VCSEL to act as an optical lens is the ideal approach.

[0005] One way to form an optical structure inside a VCSEL is, for example, to implant oxygen ions inside the VCSEL to form an oxide film with a thickness distribution or refractive index distribution in a plane. Since the refractive index of the oxide film is lower than that of the surrounding components, the oxide film can be effectively used as an optical lens depending on its shape and refractive index, and facilitate the aforementioned optical path control (see Patent Document 1 and Patent Document 2).

[0006] Patent Document 1 discloses a method for achieving optical field confinement and current confinement in a direction perpendicular to the emission direction of a VCSEL by forming an oxide film through oxygen ion implantation. Patent Document 2 discloses a method for suppressing oscillations in higher-order modes by forming an oxide film in the optical path of a beam through oxide ion implantation and reducing the difference between the equivalent refractive index along the optical path and the equivalent refractive index around the optical path.

[0007] [List of Citations]

[0008] [Patent Literature]

[0009] [Patent Document 1]

[0010] JP 2002-289967 A

[0011] [Patent Document 2]

[0012] JP 2005-183912 A Summary of the Invention

[0013] [Technical Issues]

[0014] However, the techniques disclosed in Patent Documents 1 and 2 cannot achieve complex optical path control, such as reducing diffraction loss or branching or merging beams.

[0015] Therefore, this disclosure provides a surface light-emitting device that enables complex optical path control within the device.

[0016] [Solution to the problem]

[0017] To address the aforementioned problems, this disclosure provides a surface light-emitting device, comprising:

[0018] Active layer;

[0019] The first reflector reflects light emitted by the active layer and propagating in the direction of the light-emitting surface;

[0020] A second reflector reflects light emitted by the active layer and propagating in the opposite direction to the light-emitting surface; and

[0021] An insulating film is disposed between at least one of the active layer and the first reflector and between the active layer and the second reflector, wherein at least one of the film thickness or refractive index of the insulating film is changed continuously or in stages in a plane.

[0022] The thickness or refractive index of the insulating film in the direction of the center of the optical path can be at its maximum or minimum in the plane.

[0023] The insulating film can have a uniform film thickness in a plane and a refractive index that changes continuously or in stages in the plane.

[0024] The insulating film can have a uniform refractive index in a plane and a film thickness that changes continuously or in stages in the plane.

[0025] The insulating film can be a region in the semiconductor layer that includes at least one of oxygen ions or nitrogen ions.

[0026] The semiconductor layer may include aluminum.

[0027] The insulating film can be surrounded by a semiconductor layer.

[0028] The insulating film may include multiple segmented insulating films obtained by dividing the insulating film into multiple portions in a planar direction; and

[0029] The current path connected to the active layer can be set between two adjacent, segmented insulating films in the planar direction.

[0030] Two adjacent, segmented insulating films in a planar direction can have different film thicknesses or refractive index distributions.

[0031] Multiple insulating films can be set along the optical path.

[0032] Among multiple insulating films, the insulating film closer to the active layer can have a smaller area than the other insulating films.

[0033] The surface-emitting device may include: a first coating layer disposed between the active layer and the first reflector; and

[0034] The second cladding layer is disposed between the active layer and the second reflector.

[0035] The insulating film may be disposed within at least one of the first and second covering layers.

[0036] One main surface of the insulating film may be configured to contact the end face of at least one of the first and second covering layers.

[0037] At least a portion of a main surface of the insulating film may be disposed within at least one of the first and second covering layers.

[0038] The insulating film may include:

[0039] A first insulating film is disposed between the active layer and the first reflector; and

[0040] The second insulating film is disposed between the active layer and the second reflector.

[0041] The surface-emitting device may include: a first coating layer disposed between the active layer and the first reflector; and

[0042] The second cladding layer is disposed between the active layer and the second reflector.

[0043] The first insulating film can be disposed within the first covering layer.

[0044] The second insulating film can be disposed within the second covering layer, and

[0045] The first and second insulating films may have recesses.

[0046] The insulating film may include: a first insulating film and a second insulating film located between the active layer and the first reflector, wherein the first insulating film and the second insulating film are disposed at a certain distance from each other along the optical path; and

[0047] One of the first insulating film and the second insulating film may have a recess, and the other insulating film may have a convex portion.

[0048] The first insulating film may include multiple recesses.

[0049] The second insulating film may include a protrusion, and

[0050] The luminescent surface can emit multiple beams of light by branching at multiple recesses.

[0051] The contact layer can be disposed between the active layer and the insulating film. Attached Figure Description

[0052] Figure 1A This is a cross-sectional view of the surface light-emitting device according to the first embodiment.

[0053] Figure 1B This is a plan view of the surface light-emitting device according to the first embodiment.

[0054] Figure 2A This is a diagram illustrating the process for manufacturing a surface light-emitting device according to the first embodiment.

[0055] Figure 2B It corresponds to Figure 2A Floor plan.

[0056] Figure 3A From Figure 2A Continuing with the cross-sectional process view.

[0057] Figure 3B It corresponds to Figure 3A Floor plan.

[0058] Figure 4A This is a cross-sectional process view of the surface light-emitting device according to the second embodiment.

[0059] Figure 4B From Figure 4A Continuing with the cross-sectional process view.

[0060] Figure 4C To continue Figure 4B Cross-sectional process view.

[0061] Figure 4D From Figure 4C Continuing with the cross-sectional process view.

[0062] Figure 4E Is it to continue? Figure 4D Cross-sectional process view.

[0063] Figure 5A This is a cross-sectional process view of the surface light-emitting device according to the third embodiment.

[0064] Figure 5B From Figure 5A Continuing with the cross-sectional process view.

[0065] Figure 5C From Figure 5B Continuing with the cross-sectional process view.

[0066] Figure 5D From Figure 5C Continuing with the cross-sectional process view.

[0067] Figure 6A This is a cross-sectional process view of the surface light-emitting device according to the fourth embodiment.

[0068] Figure 6B From Figure 6A Continuing with the cross-sectional process view.

[0069] Figure 6C From Figure 6B Continuing with the cross-sectional process view.

[0070] Figure 6D From Figure 6C Continuing with the cross-sectional process view.

[0071] Figure 7A This is a cross-sectional process view of the surface light-emitting device according to the fifth embodiment.

[0072] Figure 7B From Figure 7A Continuing with the cross-sectional process view.

[0073] Figure 7C From Figure 7B Continuing with the cross-sectional process view.

[0074] Figure 7D From Figure 7C Continuing with the cross-sectional process view.

[0075] Figure 8A This is a cross-sectional process view of the surface light-emitting device according to the sixth embodiment.

[0076] Figure 8B From Figure 8A Continuing with the cross-sectional process view.

[0077] Figure 8C From Figure 8B Continuing with the cross-sectional process view.

[0078] Figure 9A This is a cross-sectional process view of the surface light-emitting device according to the seventh embodiment.

[0079] Figure 9B From Figure 9A Continuing with the cross-sectional process view.

[0080] Figure 9C From Figure 9B Continuing with the cross-sectional process view.

[0081] Figure 9D From Figure 9C Continuing with the cross-sectional process view.

[0082] Figure 10A This is a cross-sectional view of the surface light-emitting device according to the eighth embodiment.

[0083] Figure 10B This is a cross-sectional process view showing the oxide film 8 divided into multiple regions.

[0084] Figure 11 This is a cross-sectional view of the surface light-emitting device according to the ninth embodiment.

[0085] Figure 12 This is a cross-sectional view of the surface light-emitting device according to the tenth embodiment.

[0086] Figure 13 This is a diagram illustrating an example of a general configuration of an endoscope system.

[0087] Figure 14 It is shown Figure 13 A block diagram showing an example of the functional configuration of the camera and CCU.

[0088] Figure 15 This is a diagram illustrating an example of a general configuration of a microsurgical system. Detailed Implementation

[0089] Embodiments of the surface-emitting device are described below with reference to the accompanying drawings. Although the following description will focus on the main components of the surface-emitting device, the surface-emitting device may have components and functions not shown or described. The following description is not intended to exclude components or functions not shown or described.

[0090] (First Implementation)

[0091] Figure 1A This is a cross-sectional view of the surface light-emitting device 1 according to the first embodiment. Figure 1B This is a plan view of the surface light-emitting device 1 according to the first embodiment. Figure 1A It shows along Figure 1B The cross-sectional structure in the direction of line AA.

[0092] like Figure 1AAs shown, the surface-emitting device 1 according to the first embodiment is a laminate in which a GaAs substrate 2, a lower DBR layer 3, a lower cladding layer 4, a contact layer 5, an active layer 6, an upper cladding layer 7, an oxide film 8, an upper DBR layer 9, a contact metal layer 10, a pad metal layer 11, and an electroplated metal layer 12 are stacked. The active layer 6, the upper cladding layer 7, the oxide film 8, the upper DBR layer 9, the contact metal layer 10, the pad metal layer 11, and the electroplated metal layer 12 constitute a mesa 13. An insulating layer 14 is disposed on the sidewall portion of the mesa 13, and a dielectric film 15 is laminated thereon. One of the lower DBR layer 3 and the upper DBR layer 9 is a first reflector, and the other is a second reflector.

[0093] In Figure 1, the surface light-emitting device 1 according to the first embodiment has a plurality of platform surfaces 13 disposed along the top surface of the contact layer 5 in a planar direction, and performs surface light emission by emitting a light beam generated by each platform surface 13 from below.

[0094] The surface-emitting device 1 according to the first embodiment reduces diffraction loss by performing optical path correction (wherein the optical path with oxide film 8 is changed) on the top surface side of the active layer 6. Furthermore, the surface-emitting device 1 according to the first embodiment can achieve current limiting in the horizontal direction via the insulating layer 14.

[0095] An oxide film 8 is disposed between the active layer 6 and the upper DBR layer 9, and is characterized in that at least one of the film thickness or refractive index in the plane is changed continuously or in stages. More specifically, for example, the oxide film 8 maximizes or minimizes the film thickness or refractive index in the central direction of the optical path in the plane.

[0096] For example, an oxide film 8 is formed by implanting oxygen ions into the upper coating layer 7. Alternatively, nitrogen ions can be implanted instead of oxygen ions, in which case a nitride film is formed instead of the oxide film 8. The insulation of the oxide film 8 or the nitride film can be ensured by at least one of oxygen ion oxidation or nitrogen ion nitriding in the semiconductor layer. The oxide film 8 or the nitride film used for optical path control may be referred to herein as an "insulating film," but examples of optical path control using the oxide film 8 will be primarily described.

[0097] Although Figure 1A The rear surface of the GaAs substrate 2 is the light-emitting surface, but the contact metal layer 10, pad metal layer 11, and electroplated metal layer 12 on the front surface side can be separated, and the front surface can be the light-emitting surface. Depending on whether the light-emitting surface of the surface light-emitting device 1 is on the front surface side or the rear surface side, the contact layer 5 on the bottom surface side of the active layer 6 is an anode or a cathode.

[0098] Figure 2A , Figure 2B , Figure 3A and Figure 3B This is a diagram illustrating the process for manufacturing the surface light-emitting device 1 according to the first embodiment. Figure 2A and Figure 3A The cross-sectional structure during the manufacturing process is shown. Figure 2B It corresponds to Figure 2A The floor plan, and Figure 3B It corresponds to Figure 3A Floor plan. Figure 2A It shows along Figure 2B The cross-sectional structure in the direction of line AA in the middle. Figure 3A It shows along Figure 3B The cross-sectional structure along line AA in the figure. The following will use these figures to describe the process for manufacturing the surface light-emitting device 1 according to the first embodiment.

[0099] Step 1: On a GaAs substrate 2, a lower DBR layer 3, a lower cladding layer 4 made of AlGaAs-type semiconductor material, a contact layer 5, an active layer 6 made of InGaAs-type semiconductor material with an oscillation wavelength of 920 nm to 960 nm, and an upper cladding layer 7 made of AlGaAs-type semiconductor material are sequentially grown. The conductivity type of the contact layer 5 and the upper cladding layer 7 are opposite to each other. It is also desirable for the upper cladding layer 7 to have a high aluminum content, which is firmly bonded to oxygen atoms, making it difficult for oxygen atoms used for ion implantation to diffuse within the semiconductor material. For example, maintaining a high aluminum content in the upper cladding layer 7 allows an oxide film 8 to be formed only in the region where oxygen ions are implanted. Thus, in this embodiment, the oxide film 8 is surrounded by the upper cladding layer 7 in a plane.

[0100] Step 2: As Figure 2A As shown, oxygen ions are injected from the top surface of the upper cladding layer 7. At this time, oxygen ions are injected using a dielectric film 16 formed in a plane protruding along the assumed optical path of the beam and a photoresist 17 disposed around the dielectric film 16 as a mask. As a result, a concave oxide film 8 corresponding to the shape of the dielectric film 16 is formed in the upper cladding layer 7 directly below the dielectric film 16. Injecting oxygen ions with peaks corresponding to the dielectric film 16 along the center direction of the optical path of the mesa 13 ensures that the center direction of the optical path of the mesa 13 is aligned with the center direction of the concave portion of the oxide film 8.

[0101] The aforementioned dielectric film 16 is pre-formed, for example, by rolling up a patterned photoresist 17 and then etching it onto the photoresist 17.

[0102] Step 3: Etch away the dielectric film 16, and then epitaxially regenerate the upper DBR layer 9 with the same conductivity type as the upper coating layer 7.

[0103] Step 4: Although not mandatory, such as Figure 3AAs shown, for example, after patterning using photoresist 17, an insulating layer 14 can be formed on the sidewall portion of the upper coating layer 7 by implanting hydrogen ions or other materials to achieve current limitation in the horizontal direction.

[0104] Step 5: Forming the mesa 13. For example, photoresist 17 is patterned so that the mesa 13 is masked, and then etched using, for example, reactive ion etching (RIE) up to the layer immediately preceding the contact layer 5.

[0105] Step 6: An upper DBR layer 9 is formed on the upper cladding layer 7 and the oxide film 8. Then, an insulating layer 14 comprising the upper DBR layer 9, the upper cladding layer 7, and the active layer 6 is formed, for example, by implanting hydrogen ions or other ions while the surface of the upper DBR layer 9 is exposed. Next, for example, a contact metal layer 10 is formed on the contact layer 5 on the top surface of the upper DBR layer 9 and on the bottom surface side of the mesa 13 by a stripping technique. The contact metal layer 10 is formed, for example, by vacuum deposition or sputtering.

[0106] Step 7: For example, a pad metal layer 11 is formed on the top surface of the mesa 13 using a stripping technique. The pad metal layer 11 is formed by vacuum deposition or sputtering. The pad metal layer 11 partially overlaps with the contact metal layer 10.

[0107] Step 8: Form an electroplated metal layer 12 in the same manner as the pad metal layer 11. The electroplated metal layer 12 is formed at least on the pad metal layer 11.

[0108] Step 9: Thin the GaAs substrate 2 and form a SiN film 20 on the back side of the GaAs substrate 2.

[0109] Step 10: Finally, the surface-emitting device 1 manufactured using the above process is diced from the GaAs substrate 2 into a chip, thus completing the chip manufacturing process. Figure 1A The VCSEL shown.

[0110] In this way, in the first embodiment, the concave oxide film 8 is formed within the upper cladding layer 7 along the central direction of the optical path of the platform 13. The oxide film 8 allows for optical path control of the light emitted from the active layer 6. For example, by implanting oxygen ions onto the convex dielectric film 16, the oxide film 8 is processed to have an external shape corresponding to the external shape of the dielectric film 16. By pre-adjusting the external shape of the dielectric film 16, an oxide film 8 with any desired external shape can be formed, which allows for control of the optical path of the light emitted by the active layer 6 as needed and reduces diffraction loss.

[0111] (Second Implementation)

[0112] The surface light-emitting device 1 of the second embodiment has a different shape and configuration from the surface light-emitting device 1 of the first embodiment in terms of the shape and configuration of the oxide film 8.

[0113] Figure 4A , Figure 4B , Figure 4C , Figure 4D and Figure 4E These are cross-sectional process views of the surface light-emitting device 1 according to the second embodiment. These cross-sectional process views will be described below.

[0114] Step 1: As Figure 4A As shown, a lower cladding layer 4 made of AlGaAs-based semiconductor material is grown on the GaAs substrate 2. Similar to the first embodiment, oxygen ions are implanted using a dielectric film 16 and a photoresist 17 as a mask to form a lower oxide film 8L. In this step, a high aluminum content is maintained in the lower cladding layer 4. This is because a high aluminum content in the semiconductor layer increases the bonding strength between oxygen atoms and aluminum atoms, making it easier to maintain the shape of the lower oxide film 8L.

[0115] Step 2: Use any of the following methods.

[0116] like Figure 4B As shown, a lower DBR layer 3 is regrown on the lower cladding layer 4, and a pillar substrate 25 is stacked on top of it. Alternatively, after the lower DBR layer 3 is grown on the back substrate 25, the lower DBR layer 3 and the lower cladding layer 4 in which the lower oxide film 8L is formed are semiconductor bonded.

[0117] Step 3: Next, as follows Figure 4C As shown, after removing the GaAs substrate 2 by etching or polishing, as in the first embodiment, the contact layer 5, the active layer 6, and the upper cladding layer 7 are sequentially grown, and oxygen ions are implanted using the dielectric film 16 as a mask. Figure 4D ).

[0118] Step 4: Perform the processing following Step 3 of the first embodiment. As a result, a final product with... Figure 4E The surface-emitting device 1 with the cross-sectional structure shown.

[0119] In this manner, the surface-emitting device 1 according to the second embodiment includes an upper oxide film 8U disposed on the upper cladding layer 7 and a lower oxide film 8L disposed on the lower cladding layer 4. Both the upper oxide film 8U and the lower oxide film 8L have recesses, which are arranged facing each other. The light emitted from the active layer 6 is controlled by the upper oxide film 8U and the lower oxide film 8L and incident on the upper DBR layer 9 and the lower DBR layer 3. This allows the light emitted from the active layer 6 to be efficiently guided to the upper DBR layer 9 and the lower DBR layer 3, and further reduces diffraction loss.

[0120] (Third Implementation)

[0121] In the third embodiment, the oxide film 8 is formed by a method different from that of the first and second embodiments.

[0122] The surface-emitting device 1 according to this disclosure includes an oxide film 8, wherein at least one of the film thickness or refractive index distribution changes continuously or in stages in the planar direction. Even if the film thickness is uniform in the planar direction, the oxide film 8 may have a refractive index distribution in the planar direction.

[0123] Furthermore, to homogenize the thickness of the oxide film 8 in the planar direction and provide an in-plane refractive index distribution, oxygen ion implantation can be performed multiple times, providing a relative distribution of the amount of oxygen ions implanted each time. As a result, the degree of oxidation of the oxide film 8 varies in-plane, enabling the formation of an in-plane refractive index distribution.

[0124] According to this method, unlike the second embodiment, it is not necessary to set a back substrate or remove the GaAs substrate 2 when forming the lower oxide film 8L.

[0125] Figure 5A , Figure 5B , Figure 5C and Figure 5D This is a cross-sectional process view of the surface light-emitting device 1 according to the third embodiment. These cross-sectional process views will be described below.

[0126] Step 1: As Figure 5A As shown, oxygen ions are injected into the entire region where the oxide film 8 is formed.

[0127] Step 2: As Figure 5B As shown, photoresist 17 is only applied to the region with the lowest refractive index (the region with the highest oxygen injection), and oxygen ions are injected again.

[0128] Step 3: As Figure 5C As shown, photoresist 17 is applied only in the region with the lowest refractive index (the region with the highest oxygen implantation) and the region with the medium refractive index (the region with the highest oxygen implantation) to perform the third oxygen ion implantation.

[0129] This method varies the total amount of in-plane injection, thus changing the degree of oxidation, thereby forming an oxide film 8 with an in-plane refractive index distribution. Alternatively, conversely, the relative amount of in-plane injection at the center of the oxide film 8 can be increased, making the ends of the oxide film 8 thinner.

[0130] Even by changing the order of the above steps, an oxide film 8 with the same refractive index distribution can still be formed. In other words, as... Figure 5C As shown, firstly, the oxygen injection level is set to the maximum level using photoresist 17 with a small area. Then, as... Figure 5BAs shown, photoresist 17 with a dielectric region is used, and the oxygen injection level is set to a medium level. Finally, as Figure 5A As shown, the oxygen injection amount is set to the minimum level using photoresist 17 with a large area.

[0131] exist Figures 5A to 5D In this method, ion implantation is performed by dividing the oxygen injection amount into three stages, but any amount of ion implantation can be used.

[0132] Thus, in the third embodiment, by changing the amount of oxygen implantation and performing multiple ion implantations, an oxide film 8 with a refractive index distribution in the planar direction can be formed while maintaining a constant film thickness.

[0133] (Fourth Implementation)

[0134] In the fourth embodiment, an oxide film 8 with a thickness distribution in the planar direction is formed.

[0135] By dividing oxygen ion implantation into multiple cases, it is possible not only to make the oxide film 8 have an in-plane refractive index distribution as in the third embodiment, but also to make the oxide film 8 have an in-plane thickness distribution.

[0136] Figure 6A , Figure 6B , Figure 6C and Figure 6D This is a cross-sectional process view of the surface light-emitting device 1 according to the fourth embodiment. These cross-sectional process views will be described below.

[0137] Step 1: As shown in the surface light-emitting device 6A, oxygen ions are implanted in the photoresist 17, which is only open in the end region of the oxide film 8. At this time, the implantation energy is increased to implant the ions to a greater depth.

[0138] Step 2: As Figure 6B As shown, oxygen ions are implanted a second time when the photoresist 17 is only open in the region from the center to the end of the oxide film 8. At this time, the implantation energy is set to be lower than the energy used during the first implantation, so that the ion implantation depth is relatively low.

[0139] Step 3: As Figure 6C As shown, oxygen ions are implanted for the third time when the photoresist 17 only opens in the central region of the oxide film 8. At this time, the implantation energy is said to be even lower than the implantation energy used during the first and second implantations, resulting in the lowest ion implantation depth.

[0140] Through this method, such as Figure 6DAs shown, an oxide film 8 with a refractive index distribution that is recessed along the optical path can be formed. Conversely, if the ion implantation depth is increased at the center of the oxide film 8 and decreased at the ends, an oxide film 8 that is recessed along the optical path can be formed.

[0141] Even if the order of steps 1 to 3 above is changed, the final configuration will remain the same. Furthermore, the number of implantation cycles divided into ion implantation does not need to be the three described above. When adjusting the implantation energy to implant ions to a greater depth, the implantation amount per unit volume decreases, and therefore the implantation amount increases as needed. Conversely, when implanting ions to a smaller depth, the implantation amount decreases as needed.

[0142] Thus, in this fourth embodiment, by changing the amount of oxygen ions implanted and performing multiple ion implantations, an oxide film 8 with a thickness distribution in the planar direction can be formed. That is, the oxide film 8 can have a uniform refractive index in the plane, or the film thickness can be changed continuously or in stages in the plane.

[0143] (Fifth Implementation)

[0144] In this fifth embodiment, an oxide film 8 with a thickness distribution in the planar direction is formed using a method different from that in the fourth embodiment.

[0145] In the first to fourth embodiments described above, the oxide film 8 is formed to contact the surface of the upper coating layer 7 or the lower coating layer 4, but it is also possible to ensure that at least a portion of the oxide film 8 does not contact the surface. This allows for the optimization of the shape and arrangement of the oxide film 8.

[0146] As the oxygen ion implantation energy increases, the number of oxygen atoms increases at locations farther from the surface and decreases at locations closer to the surface. Furthermore, by adjusting the amount of oxygen ion implantation, oxidation near the surface of the upper coating layer 7 or the lower coating layer 4 can be prevented, ensuring that the oxide film 8 does not exist near the surface.

[0147] Figure 7A , Figure 7B , Figure 7C and Figure 7D This is a cross-sectional process view of the surface light-emitting device 1 according to the fifth embodiment. These cross-sectional process views will be described below.

[0148] Step 1: As Figure 7A As shown, oxygen ions are implanted, and the photoresist 17 opens only in the end region of the oxide film 8. At this time, the implantation energy is increased to implant oxygen ions at a location away from the surface of the upper cladding layer 7 or the lower cladding layer 4. At this time, the amount of oxygen ion implantation is reduced to ensure that there are no oxygen ions near the surface of the upper cladding layer 7 or the lower cladding layer 4 where oxygen ions are implanted (hereinafter, "oxygen ion implantation interface").

[0149] Step 2: As Figure 7B As shown, oxygen ions are implanted a second time when the photoresist 17 is only open in the region from the center to the ends of the oxide film 8. This time, the implantation energy is the same as in the first implantation, but a relatively higher implantation amount is used to ensure oxidation up to the vicinity of the oxygen ion implantation interface.

[0150] Step 3: As Figure 7C As shown, during the third oxygen ion implantation, photoresist 17 is activated only in the central region of the oxide film 8. At this point, the implantation energy is the same as in the first and second implantations, but the highest relative implantation amount is used to ensure oxidation up to the oxygen ion implantation interface.

[0151] Through this method, such as Figure 7D As shown, a convex oxide film 8 with a refractive index distribution that changes in the planar direction can be formed. Alternatively, conversely, by reducing the amount of oxygen ion implantation in the central portion of the oxide film 8 and increasing the amount implantation at the ends, a concave oxide film 8 can be formed.

[0152] Even if the order of the above steps is reversed, an oxide film 8 with the same shape can still be formed, such that oxygen ions are first injected into the central part of the oxide film 8, and then oxygen ions are finally injected into the ends of the oxide film 8. The number of oxygen ion injections is not necessarily limited to three.

[0153] (Sixth Implementation Method)

[0154] In the sixth embodiment, multiple beams are emitted from the platform surface 13.

[0155] In addition to reducing diffraction loss as described in the first and second embodiments, the oxide film 8 can be used to branch a light beam emitted from the active layer 6 of one mesa 13 into multiple beams within the mesa 13. Thus, for example, by controlling the optical path using the oxide film 8 in the mesa 13 of the VCSEL, each mesa 13 of the VCSEL can be configured with multiple emitters and emit multiple beams of light.

[0156] Figure 8A , Figure 8B and Figure 8C This is a cross-sectional process view of the surface light-emitting device 1 according to the sixth embodiment. These cross-sectional process views will be described below.

[0157] Figures 8A to 8C The process for manufacturing a surface-emitting device 1 as a front-surface-emitting type is shown. In the beam emission direction and horizontal direction of the surface-emitting device 1, the oxide film 8 is configured to have a smaller size in the vertical direction close to the active layer 6, making it easier to ensure the current path to the active layer 6.

[0158] Step 1: On a GaAs substrate 2, a lower DBR layer 3, a lower cladding layer 4 made of AlGaAs-based semiconductor material, a contact layer 5, an active layer 6 made of InGaAs-based semiconductor material with an oscillation wavelength of 920nm–960nm, and an upper cladding layer 7 made of AlGaAs-based semiconductor material are grown. The conductivity type of the contact layer 5 and the upper cladding layer 7 are opposite to each other. The upper cladding layer 7 is also given a high aluminum content, which strongly bonds with oxygen atoms, making it difficult for oxygen atoms used for ion implantation to diffuse within the semiconductor.

[0159] Step 2: As Figure 8A As shown, oxygen ions are implanted from the surface of the upper coating layer 7. Here, unlike the first embodiment, a dielectric film 16 and a photoresist 17 are used as a mask for oxygen ion implantation, and the dielectric film 16 is formed as a concave surface in the plane along the assumed optical path of the light beam. As a result, the shape of the dielectric film 16 is reflected in the semiconductor layer directly beneath the dielectric film 16, and a convex oxide film 8 is formed along the optical path.

[0160] Step 3: As Figure 8B As shown, after etching away the dielectric film 16, a cladding layer 7 is regrown, and oxygen ions are re-implanted using the dielectric film 16, which is formed in a convex shape within the plane of the assumed optical path of the beam, and the photoresist 17 as a mask. Consequently, a concave oxide film 8 is formed along the optical path in the semiconductor layer directly beneath the dielectric film 16. The oxide film 8 has multiple recesses, each of which can independently guide the beam to the light-emitting surface.

[0161] Step 4: Although not mandatory, current limiting is achieved by injecting ions (which can be ions other than oxygen) after patterning with photoresist 17.

[0162] Step 5: After removing the dielectric film 16 by wet etching, an upper DBR layer 9 is formed, for example, by epitaxial growth. The conductivity type of the contact layer 5 is the same as that of the upper DBR layer 9. Subsequent steps are the same as in the first embodiment.

[0163] Then, the processing after step 5 in the first embodiment is performed to finally manufacture the product. Figure 8C The surface-emitting device 1 shown. In the case of surface-emitting type, it is not necessary to form a SiN film on the back side of the substrate.

[0164] In this way, in the sixth embodiment, changing the shape of the oxide film 8 in the platform 13 of the VCSEL makes it possible to split the light beam emitted by the active layer 6 in the oxide film 8 into multiple beams and to emit those beams, which makes a multi-emitter configuration possible.

[0165] (Seventh Implementation)

[0166] In the seventh embodiment, the active layer 6 of the platform surface 13 is divided into multiple regions, and a light beam is emitted for each segment of the active layer 6, and the light beams are combined into a single light beam in the oxide film 8 and emitted.

[0167] As an optical path control method different from that used in the first, second, and sixth embodiments, for example, multiple beams within the stage 13 can be combined into a single beam within the stage 13. Therefore, for example, even if the optical output of a single beam is insufficient for the intended application, a single-emitter structure can be achieved by combining the beams into a single beam without altering the VCSEL structure except for the oxide film 8, which increases the output. Alternatively, if the aperture diameter is too large, the bias output of the current distribution may deteriorate. Therefore, by conversely dividing the device into small apertures and combining the resulting beams into a single beam, the output can be increased.

[0168] Figure 9A , Figure 9B , Figure 9C and Figure 9D This is a cross-sectional process view of the surface light-emitting device 1 according to the seventh embodiment. These cross-sectional process views will be described below.

[0169] Step 1: A lower DBR layer 3, a lower cladding layer 4 made of AlGaAs-type semiconductor material, a contact layer 5, an active layer 6 made of InGaAs-type semiconductor material with an oscillation wavelength of 920nm to 960nm, and an upper cladding layer 7 made of AlGaAs-type semiconductor material are grown on the GaAs substrate 2. The conductivity type of the contact layer 5 and the upper cladding layer 7 are opposite to each other. The upper cladding layer 7 is also given a high aluminum content, which strongly bonds with oxygen atoms, making it difficult for oxygen atoms used for ion implantation to diffuse within the semiconductor.

[0170] Step 2: As Figure 9A As shown, hydrogen ions (which can be ions other than hydrogen) for device separation are injected from the surface of the upper coating layer 7. Therefore, the active layer 6 is divided into multiple segmented active layers 6. An oxide film 21 is disposed between two adjacent segmented active layers 6 along the planar direction.

[0171] Step 3: As Figure 9B As shown, the method of the fifth embodiment is used to regenerate the upper coating layer 7 and form an oxide film 8L on its surface.

[0172] Step 4: As Figure 9CAs shown, the cladding layer 7 is regrown, and oxygen ions are implanted using a dielectric film 16 and a photoresist 17 as a mask. The dielectric film 16 is formed in a convex shape in the plane along the assumed optical path of the beam. As a result, a concave oxide film 8U is formed along the optical path in the semiconductor layer directly below the dielectric film 16.

[0173] Step 5: After etching away the dielectric film 16, an upper DBR layer 9 with the same conductivity type as the upper cladding layer 7 is formed by epitaxial growth.

[0174] Step 6: Then perform the same steps as step 5 and subsequent steps in the first embodiment, and finally manufacture. Figure 9D The surface-emitting device 1 shown. In the case of surface-emitting type, it is not necessary to form a SiN film on the back side of the substrate.

[0175] In this way, in the sixth embodiment, the active layer 6 of the platform 13 is divided into multiple parts and emits multiple light beams, and then the light beams are combined into a single beam in the oxide film 8 and emitted. This makes it possible to increase the light output of the light beam emitted from each platform 13.

[0176] (Eighth Implementation Method)

[0177] In the eighth embodiment, the oxide film 8 is divided into multiple regions to ensure the current path to the active layer 6.

[0178] The oxide film 8 is an insulator that does not allow current to pass through. Therefore, depending on the location and size of the oxide film 8, a sufficient current path to the active layer 6 cannot be ensured. Therefore, the oxide film 8 is divided into multiple regions in the planar direction, and a gap is provided between two adjacent divided oxide films 8d. A current path is provided in the gap as needed so as not to affect the degree of optical path control.

[0179] Figure 10A This is a cross-sectional view of the surface light-emitting device 1 according to the eighth embodiment. Figure 10B This is a cross-sectional process view showing the process of dividing the oxide film 8 into multiple regions.

[0180] like Figure 10B As shown, photoresist 17 is arranged and patterned on dielectric film 16, which has a shape conforming to oxide film 8. By implanting oxygen ions into the upper cladding layer 7 above dielectric film 16, the oxygen ions are not directly implanted below photoresist 17, which creates a gap between two segmented oxide films 8d. The film thickness or refractive index distribution of two adjacent oxide films 8d in the planar direction is different.

[0181] Thus, in the eighth embodiment, by dividing the oxide film 8U into multiple segmented oxide films 8d, the current path of the active layer 6 can be provided in the gap between two adjacent segmented oxide films 8d in the planar direction. Therefore, optical path control can be performed using multiple oxide films 8d without obstructing the current path of the active layer 6.

[0182] (Ninth Implementation)

[0183] In the ninth embodiment, the contact layer 5c is disposed between the oxide film 8 and the active layer 6.

[0184] Figure 11 This is a cross-sectional view of the surface light-emitting device 1 according to the ninth embodiment. It is necessary to ensure the current path between the cathode-side contact layer 5 and the active layer 6. If the cathode-side contact layer 5 is located between the active layer 6 and the oxide film 8, the current path between the cathode-side contact layer 5 and the active layer 6 will not be blocked by the oxide film 8.

[0185] Therefore, in the surface light-emitting device 1 according to the ninth embodiment, the cathode-side contact layer 5c is disposed between the active layer 6 and the oxide film 8, such as Figure 11 As shown. The cathode-side contact metal layer 10 is connected to the cathode-side contact layer 5c. The cathode-side contact metal layer 10 is configured to cover the sidewalls and top surface of the mesa 13. The cathode-side contact metal layer 10 is stacked with the cathode-side pad metal layer 11 and the cathode-side electroplated metal layer 12.

[0186] Figure 10 shows an example where the cathode-side contact layer 5c is disposed between the active layer 6 and the oxide film 8, and the anode-side contact layer 5a is disposed on the opposite side. However, the anode-side contact layer 5a may be disposed between the active layer 6 and the oxide film 8, and the cathode-side contact layer 5c may be disposed on the opposite side. The upper DBR layer 9 may also be a dielectric film 16.

[0187] In this way, in the surface light-emitting device 1 according to the ninth embodiment, the cathode (or anode) side contact layer 5c (or 5a) is disposed between the active layer 6 and the oxide film 8. Therefore, even without dividing the oxide film 8, the oxide film 8 will not obstruct the current path of the active layer 6, and the oxide film 8 can be processed into an optimal shape for optical path control.

[0188] (Tenth Implementation)

[0189] In the tenth embodiment, multiple oxide films 8 with different areas are respectively provided on the upper coating layer 7 and the lower coating layer 4.

[0190] In the first to ninth embodiments, one or two oxide films 8 for optical path control are provided on at least one of the upper cladding layer 7 or the lower cladding layer 4. However, there is a risk that the desired optical path control cannot be achieved with only a small amount of oxide film 8. In addition, if the desired optical path control is achieved with only a small amount of oxide film 8, the shape of the oxide film 8 needs to be complicated or its size increased, which may complicate the manufacturing process. Therefore, multiple oxide films 8 of different sizes can also be arranged along the optical path.

[0191] Figure 12 This is a cross-sectional view of the surface light-emitting device 1 according to the tenth embodiment. For example... Figure 12 As shown, the surface light-emitting device 1 according to the tenth embodiment includes a plurality of upper oxide films 8U disposed along the optical axis of the upper coating layer 7 and a plurality of lower oxide films 8L disposed along the optical axis of the lower coating layer 4.

[0192] The area of ​​the multiple upper oxide films 8U decreases as they approach the active layer 6. Similarly, the area of ​​the multiple lower oxide films 8L decreases as they approach the active layer 6. Therefore, the upper oxide films 8U and the lower oxide films 8L do not obstruct the current path to the active layer 6.

[0193] In this manner, in the surface light-emitting device 1 according to the tenth embodiment, a plurality of oxide films 8 are arranged along the optical axis on at least one of the upper cladding layer 7 or the lower cladding layer 4. Therefore, by adjusting the shape and position of each oxide film 8, optimal optical path control can be achieved. In addition, the oxide film 8 closest to the active layer 6 has a smaller area, so there is no risk of blocking the current path to the active layer 6.

[0194] <<Application Examples>> The technology disclosed herein can be widely applied to various electronic devices, such as medical imaging systems, distance measurement systems such as LiDAR (Light Detection and Ranging) devices, and light sources for laser processing devices. Medical imaging systems are medical systems that use imaging technology and include, for example, endoscope systems and microscope systems.

[0195] [Endoscopic System]

[0196] Reference Figure 13 and Figure 14 Illustrate an example of an endoscopic system. Figure 13 This is a schematic diagram illustrating an example of the configuration of an endoscope system 5000 to which the technology according to this disclosure can be applied. Figure 14 This is a diagram illustrating an example of the configuration of the endoscope 5001 and the camera control unit (CCU) 5039. Figure 13 This illustrates the state of a surgical operator (e.g., a physician) 5067 using an endoscope system 5000 to perform surgery on patient 5071 on bed 5069. Figure 13As shown, the endoscope system 5000 consists of a medical imaging element, namely an endoscope 5001, a CCU 5039, a light source device 5043, a recording device 5053, an output device 5055, and a support device 5027 for supporting the endoscope 5001.

[0197] In endoscopic surgery, an insertion aid called a cannula 5025 is inserted into the patient 5071. Additionally, an observer 5003 and surgical instruments 5021 connected to the endoscope 5001 are inserted into the patient 5071 via the cannula 5025. Examples of surgical instruments 5021 include power devices such as electrosurgical scalpels and forceps.

[0198] A surgical image, captured by an endoscope 5001 and showing the interior of the patient 5071, is displayed on a display device 5041. The surgeon 5067 uses surgical instruments 5021 to treat the surgical target while viewing the surgical image displayed on the display device 5041. Furthermore, the medical image is not limited to surgical images; it can also be a diagnostic image captured during diagnosis.

[0199] [Endoscope]

[0200] like Figure 14As shown, endoscope 5001 is an imaging unit for capturing images inside the patient 5071, and is a camera 5005. The camera 5005 includes, for example: a focusing optical system 50051 that focuses incident light; a zoom optical system 50052 that can optically zoom by changing the focal length of the imaging unit; a focusing optical system 50053 that can adjust the focus by changing the focal length of the imaging unit; and a light receiving element 50054. Endoscope 5001 generates pixel signals by focusing light onto the light receiving element 50054 via a connected observer 5003, and outputs the pixel signals to CCU 5039 via a transmission system. Note that observer 5003 is an insertion part with an objective lens at its tip, guiding light from the connected light source device 5043 into the patient 5071. Observer 5003 is a rigid endoscope when used with a rigid endoscope, and a flexible endoscope when used with a flexible endoscope. The observer 5003 can be a direct-view observer or an oblique-view observer. Furthermore, the pixel signal can be any signal based on the signal output from the pixel, such as, for example, a RAW signal or an image signal. Alternatively, a memory can be provided in the transmission system connecting the endoscope 5001 and the CCU 5039, storing parameters related to the endoscope 5001 and the CCU 5039. The memory can be arranged, for example, in the connection section of the transmission system or in the cable. For example, factory parameters of the endoscope 5001, parameters that change when power is turned on, etc., can be stored in the memory of the transmission system, and the operation of the endoscope can be changed based on the parameters read from the memory. Additionally, the endoscope and the transmission system can be grouped together and collectively referred to as the endoscope. The light receiving element 50054 is a sensor that converts the received light into pixel signals, and is, for example, a complementary metal-oxide-semiconductor (CMOS) type image sensor. The light receiving element 50054 is preferably an image sensor with a Bayer array capable of color imaging. Furthermore, for example, the light receiving element 50054 is preferably an image sensor having multiple pixels corresponding to a resolution of 4K (3,840 horizontal pixels × 2,160 vertical pixels), 8K (7,680 horizontal pixels × 4,320 vertical pixels), or square 4K (more than 3,840 horizontal pixels × more than 3,840 vertical pixels). The light receiving element 50054 can be a single sensor chip or multiple sensor chips. For example, it can also be structured such that a prism is provided to separate the incident light into each defined wavelength band, and different light receiving elements are used to capture each wavelength band. Additionally, multiple light receiving elements can be provided for stereoscopic viewing. Furthermore, the light receiving element 50054 can be a sensor including computational processing circuitry for image processing in the chip structure, or it can be a sensor for time-of-flight (ToF). Note that the transmission system is, for example, fiber optic cable or wireless transmission.As long as the pixel signal generated by the endoscope 5001 can be transmitted, any wireless transmission method can be used. For example, the endoscope 5001 and CCU 5039 can be wirelessly connected, or the endoscope 5001 and CCU 5039 can be connected via a base station in the operating room. In this case, in addition to the pixel signal, the endoscope 5001 can also simultaneously transmit information related to the pixel signal (e.g., pixel signal processing priority, synchronization signal, etc.). Alternatively, the endoscope can be configured to integrate the endoscope body and camera, with a light receiving element located at the front end of the endoscope body.

[0201] Camera Control Unit (CCU)

[0202] The CCU 5039 is a control device that comprehensively controls the connected endoscope 5001, light source device 5043, etc., for example... Figure 14 The diagram shows an information processing unit equipped with an FPGA 50391, a CPU 50392, a RAM 50393, a ROM 50394, a GPU 50395, and an I / F 50396. The CCU 5039 can also comprehensively control the connected display device 5041, recording device 5053, and output device 5055. For example, the CCU 5039 controls the illumination timing, illumination intensity, and type of illumination source of the light source device 5043. The CCU 5039 performs image processing such as development processing (e.g., demosaicing) or correction processing on the pixel signals output from the endoscope 5001, and outputs the processed pixel signals (e.g., images) to an external device such as the display device 5041. The CCU 5039 also sends control signals to the endoscope 5001 to control the drive of the endoscope 5001. For example, the control signals are information about the imaging conditions of the imaging unit (such as magnification, focal length, etc.). CCU 5039 has an image down-conversion function and can be configured to simultaneously output high-resolution (e.g., 4K) images to display device 5041 and low-resolution (e.g., HD) images to recording device 5053.

[0203] The CCU 5039 can also be connected to external devices (e.g., recording devices, display devices, output devices, or support devices) via an IP converter that converts signals into a predetermined communication protocol (e.g., Internet Protocol (IP)). The connection between the IP converter and the external device can be a wired network, or some or all of the network can be configured as a wireless network. For example, the IP converter on the CCU 5039 side has wireless communication capabilities and can transmit received video to an IP switch or output-side IP converter via a wireless communication network such as 5G or 6G.

[0204] [Light source device]

[0205] The light source device 5043 is a device capable of irradiating light of a predetermined wavelength band, and includes, for example, multiple light sources and a light source optical system for guiding the light from the multiple light sources. The light sources are, for example, xenon lamps, LED light sources, or LD light sources. The light source device 5043 includes LED light sources corresponding to, for example, the three primary colors R, G, and B, and emits white light by controlling the output intensity or output timing of each light source. In addition to light sources emitting ordinary light for ordinary light observation, the light source device 5043 may also have light sources capable of emitting special light for special light observation. Special light is light of a predetermined wavelength band different from ordinary light used for ordinary light observation, such as near-infrared light (light with a wavelength of 760 nm or more), infrared light, blue light, ultraviolet light, etc. Normal light is, for example, white light or green light. Based on narrow-band light observation as a special light observation, by alternately emitting blue light and green light, it is possible to image predetermined tissues such as blood vessels on the surface of mucous membranes with high contrast by utilizing the wavelength dependence of light absorption by biological tissues. According to fluorescence observation, a type of special light observation, the surgeon emits excitation light to excite a drug injected into the biological tissue and receives the fluorescence emitted from the biological tissue or object (the drug) to obtain a fluorescence image. This allows for easy visual confirmation of biological tissues that are difficult to visually confirm using ordinary light. For example, according to fluorescence observation using infrared light, by irradiating an agent such as indocyanine green (ICG) injected into the biological tissue with infrared light having an excitation wavelength band and receiving the fluorescence of the agent, the structure of the biological tissue or the affected area can be easily visually confirmed. According to fluorescence observation, drugs that are excited by special light in the blue wavelength band and emit fluorescence in the red wavelength band (e.g., 5-ALA) can be used. Under the control of CCU 5039, the type of emitted light is set to the light source device 5043. CCU 5039 can have a mode that alternates between ordinary light observation and special light observation by controlling the light source device 5043 and the endoscope 5001. In this case, it is preferable to overlay information based on pixel signals obtained through special light observation with pixel signals obtained through normal light observation. Special light observation can be infrared light observation that emits infrared light and observes depths beyond the anterior surface of the organ, or multispectral observation utilizing hyperspectral light. Furthermore, photodynamic therapy can be used in combination.

[0206] [Recording device]

[0207] Recording device 5053 is an apparatus for recording pixel signals (e.g., images) obtained from CCU 5039, and is, for example, a recorder. Recording device 5053 records the images obtained from CCU 5039 onto an HDD, SDD, or optical disc. Recording device 5053 can be connected to a network in the hospital and can be accessed from a device outside the operating room. Recording device 5053 may also have image down-conversion or up-conversion functions.

[0208] [Display device]

[0209] Display device 5041 is, for example, a device capable of displaying images, such as a display monitor. Display device 5041 displays images based on pixel signals obtained from CCU 5039. By including a camera or microphone, display device 5041 can also be used as an input device that enables input of commands via gaze recognition, voice recognition, and gestures.

[0210] [Output Device]

[0211] Output device 5055 is a device for outputting information obtained from CCU 5039, and is, for example, a printer. For example, output device 5055 prints an image on paper based on pixel signals obtained from CCU 5039.

[0212] [Supporting device]

[0213] The support device 5027 is a hinged arm, comprising a base 5029, an arm portion 5031, and a retaining portion 5032. The base 5029 includes an arm control device 5045. The arm portion 5031 extends from the base 5029, and the retaining portion 5032 is attached to the distal end of the arm portion 5031. The arm control device 5045 includes a processor, such as a CPU, and controls the drive of the arm portion 5031 by operating according to a predetermined program. The support device 5027 uses the arm control device 5045 to control parameters such as the length of each link 5035 constituting the arm portion 5031, the rotation angle of each joint portion 5033, and torque, for example, controlling the position and orientation of the endoscope 5001 held by the retaining portion 5032. Thus, the endoscope 5001 can be changed to a desired position or orientation, the observer 5003 can be inserted into the patient 5071, and the observation area within the body can be altered. The support device 5027 functions as an endoscope support arm that supports the endoscope 5001 during surgery. Thus, the support device 5027 can replace the observer who assists in holding the endoscope 5001. The support device 5027 can be a device that supports the microscope device 5301 (described later) and can also be referred to as a medical support arm. Note that the support device 5027 can be controlled by an autonomous control method of the arm control device 5045 or by a control method that controls the arm control device 5045 based on user input. For example, the control method can be a master-slave method, where the support device 5027, serving as a slave device (copy device) of a patient trolley, is controlled based on the movement of the master device (primary device) which is the surgeon's console in front of the user. The support device 5027 can be remotely controlled from outside the operating room.

[0214] Examples of endoscope systems 5000 to which the technology of this disclosure can be applied have been described above. For example, the technology according to this disclosure can be applied to microscope systems.

[0215] [Microscope System]

[0216] Figure 15 This is a schematic diagram illustrating an example of a microsurgical system to which the technology according to the invention can be applied. Note that in the following description, the same reference numerals are used for the same components as in the endoscope system 5000, and repeated descriptions are omitted.

[0217] Figure 15 The illustration schematically depicts a surgeon 5067 performing surgery on a patient 5071 on a bed 5069 using a microsurgical system 5300. For simplicity, in... Figure 15In this description, the trolley 5037 in the construction of the microsurgical system 5300 is not shown, and the microscope device 5301 is shown in a simplified manner instead of the endoscope 5001. In this respect, the microscope device 5301 in these descriptions may refer to the microscope unit 5303 disposed at the distal end of the link 5035, or it may refer to the entire configuration including the microscope unit 5303 and the support device 5027.

[0218] like Figure 15 As shown, using a microsurgical system 5300, during surgery, an image of the surgical site captured by a microscope device 5301 is magnified and displayed on a display device 5041 installed in the operating room. The display device 5041 is mounted facing the surgeon 5067, who performs various procedures on the surgical site, such as removing affected areas, while observing the state of the surgical site through the image projected onto the display device 5041. Microsurgical systems are used, for example, in ophthalmic and neurosurgical procedures.

[0219] Examples of endoscope systems 5000 and microsurgical systems 5300 to which the technology of this disclosure can be applied have been described above. It should be noted that systems to which the technology of this disclosure can be applied are not limited to these examples. For example, the support device 5027 may also support another observation device or another surgical instrument distally, instead of the endoscope 5001 or microscope unit 5303. Other observation devices may include, for example, forceps, tweezers, pneumoperitoneum tubes, energy processing devices for cauterizing and cutting tissue and sealing blood vessels, etc. The observation device and surgical instrument are supported by the support device, which allows for greater stability in positioning and reduces the workload of the medical personnel compared to manual support. The technology of this disclosure can be applied to such support devices supporting configurations other than microscope units.

[0220] The technology disclosed herein can be advantageously applied to the surgical tool 5021 configured as described above. Specifically, by irradiating the patient's affected area with short-pulse laser pulses from the surface-emitting device 1 according to this embodiment, treatment of the affected area can be performed more safely and reliably without damaging the surrounding area.

[0221] It should be noted that this technology can also be configured as follows.

[0222] (1) A surface light-emitting device, comprising:

[0223] Active layer;

[0224] The first reflector reflects light emitted by the active layer and propagating in the direction of the light-emitting surface;

[0225] A second reflector reflects light emitted by the active layer and propagating in the opposite direction to the light-emitting surface; and

[0226] An insulating film is disposed between at least one of the active layer and the first reflector and between the active layer and the second reflector, wherein at least one of the film thickness or refractive index of the insulating film is changed continuously or in stages in a plane.

[0227] (2) Based on the surface light-emitting device in (1),

[0228] Among them, the thickness or refractive index of the insulating film is at its maximum or minimum in the plane along the central direction of the optical path.

[0229] (3) The surface light-emitting device according to (1) or (2),

[0230] The insulating film has a uniform film thickness in the plane and a refractive index that changes continuously or in stages in the plane.

[0231] (4) The surface light-emitting device according to (1) or (2),

[0232] The insulating film has a uniform refractive index in the plane and a film thickness that changes continuously or in stages in the plane.

[0233] (5) A surface-emitting device according to any one of (1) to (4),

[0234] The insulating film is a region in the semiconductor layer that contains at least one of oxygen ions or nitrogen ions.

[0235] (6) Based on the surface light-emitting device in (5),

[0236] The semiconductor layer contains aluminum.

[0237] (7) The surface light-emitting device according to (5) or (6),

[0238] The insulating film is surrounded by a semiconductor layer.

[0239] (8) A surface-emitting device according to any one of (1) to (7),

[0240] The insulating film includes multiple segmented insulating films obtained by dividing the insulating film into multiple parts in a planar direction, and

[0241] The current path connected to the active layer is set between two adjacent, segmented insulating films in the planar direction.

[0242] (9) Based on the surface light-emitting device in (8),

[0243] In this case, two adjacent, segmented insulating films have different film thicknesses or refractive index distributions.

[0244] (10) A surface-emitting device according to any one of (1) to (9), comprising:

[0245] Multiple insulating films are arranged along the optical path.

[0246] (11) Based on the surface light-emitting device of (10),

[0247] Among the various insulating films, the insulating film closer to the active layer has a smaller area than the other insulating films.

[0248] (12) A surface-emitting device according to any one of (1) to (11), comprising:

[0249] A first cladding layer is disposed between the active layer and the first reflector; and

[0250] The second cladding layer is disposed between the active layer and the second reflector.

[0251] The insulating film is disposed within at least one of the first and second covering layers.

[0252] (13) Based on the surface light-emitting device of (12),

[0253] In this embodiment, the entire main surface of the insulating film is configured to contact the end face of at least one of the first and second covering layers.

[0254] (14) Based on the surface light-emitting device of (12),

[0255] In this embodiment, at least a portion of a main surface of the insulating film is disposed within at least one of the first and second covering layers.

[0256] (15) A surface-emitting device according to any one of (1) to (14),

[0257] The insulating film includes:

[0258] A first insulating film is disposed between the active layer and the first reflector; and

[0259] The second insulating film is disposed between the active layer and the second reflector.

[0260] (16) The surface light-emitting device according to (15) includes:

[0261] A first cladding layer is disposed between the active layer and the first reflector; and

[0262] The second cladding layer is disposed between the active layer and the second reflector.

[0263] The first insulating film is disposed within the first covering layer.

[0264] The second insulating film is disposed within the second covering layer, and

[0265] The first insulating film and the second insulating film have recesses.

[0266] (17) A surface-emitting device according to any one of (1) to (14),

[0267] The insulating film includes a first insulating film and a second insulating film located between the active layer and the first reflector. The first insulating film and the second insulating film are disposed at a certain distance from each other along the optical path.

[0268] One of the first insulating film and the second insulating film has a recess, and the other of the first insulating film and the second insulating film has a convex portion.

[0269] (18) The surface light-emitting device according to (17),

[0270] The first insulating film includes multiple recesses.

[0271] The second insulating film includes a protrusion, and

[0272] The luminescent surface emits multiple beams of light by branching at multiple recesses.

[0273] (19) A surface-emitting device according to any one of (1) to (18), comprising:

[0274] The contact layer is disposed between the active layer and the insulating film.

[0275] This disclosure is not limited to the foregoing embodiments, and includes various modifications that can be made by those skilled in the art, and the effects of this disclosure are not limited to the details described above. In other words, various additions, modifications, and partial deletions can be made without departing from the concept and spirit of this disclosure as defined in the claims and their equivalents.

[0276] [List of Reference Numbers]

[0277] 1 Surface Emitting Device

[0278] 2GaAs substrate

[0279] 3. DBR layer

[0280] 4. Lower coating layer

[0281] 5. Contact layer

[0282] 5a Anode-side contact layer

[0283] 5c cathode side contact layer

[0284] 6. Active Layer

[0285] 7. Top Coating

[0286] 8. Oxide film

[0287] 8D segmented oxide film

[0288] 8L lower oxide film

[0289] 8U oxide film

[0290] 9. Upper DBR layer

[0291] 10 Contact metal layer

[0292] 11 Pad Metal Layer

[0293] 12 Electroplated metal layer

[0294] 13 facial

[0295] 14 Insulation layer

[0296] 15 Dielectric film

[0297] 16 Dielectric film

[0298] 17 Photoresist

[0299] 20 SiN film

[0300] 21 Oxide film

[0301] 25 Back substrate

Claims

1. A surface-emitting device, comprising: Active layer; The first reflector reflects light emitted by the active layer and propagating in the direction of the light-emitting surface; The second reflector reflects light emitted by the active layer and propagating in the opposite direction to the light-emitting surface; as well as An insulating film is disposed between at least one of the active layer and the first reflector and between the active layer and the second reflector, wherein at least one of the film thickness or refractive index of the insulating film is changed continuously or in stages in a plane.

2. The surface light-emitting device according to claim 1, in, The thickness or refractive index of the insulating film in the central direction of the optical path is at its maximum or minimum in the plane.

3. The surface light-emitting device according to claim 1, in, The insulating film has a uniform film thickness in the plane and a refractive index that changes continuously or in stages in the plane.

4. The surface light-emitting device according to claim 1, in, The insulating film has a uniform refractive index in the plane and a film thickness that changes continuously or in stages in the plane.

5. The surface light-emitting device according to claim 1, in, The insulating film is a region in the semiconductor layer that includes at least one of oxygen ions or nitrogen ions.

6. The surface light-emitting device according to claim 5, in, The semiconductor layer comprises aluminum.

7. The surface light-emitting device according to claim 5, in, The insulating film is surrounded by the semiconductor layer.

8. The surface light-emitting device according to claim 1, in, The insulating film comprises a plurality of segmented insulating films obtained by dividing the insulating film into a plurality of portions in a planar direction, and The current path connected to the active layer is disposed between two adjacent segments of the insulating film in the planar direction.

9. The surface light-emitting device according to claim 8, in, The two adjacent segments of the insulating film in the planar direction have different film thicknesses or refractive index distributions from each other.

10. The surface light-emitting device according to claim 1, comprising: Multiple insulating films are arranged along the optical path.

11. The surface light-emitting device according to claim 10, in, Of the plurality of insulating films, the insulating film closer to the active layer has a smaller area than the other insulating films.

12. The surface light-emitting device according to claim 1, comprising: A first cladding layer is disposed between the active layer and the first reflector; as well as A second cladding layer is disposed between the active layer and the second reflector. The insulating film is disposed within at least one of the first covering layer and the second covering layer.

13. The surface light-emitting device according to claim 12, in, The entire main surface of the insulating film is configured to contact the end face of at least one of the first and second covering layers.

14. The surface light-emitting device according to claim 12, in, At least a portion of a main surface of the insulating film is disposed within at least one of the first and second covering layers.

15. The surface light-emitting device according to claim 1, in, The insulating film comprises: A first insulating film is disposed between the active layer and the first reflector; and A second insulating film is disposed between the active layer and the second reflector.

16. The surface light-emitting device according to claim 15, comprising: A first cladding layer is disposed between the active layer and the first reflector; as well as A second cladding layer is disposed between the active layer and the second reflector. The first insulating film is disposed within the first covering layer. The second insulating film is disposed within the second covering layer, and The first insulating film and the second insulating film have recesses.

17. The surface light-emitting device according to claim 1, in, The insulating film includes a first insulating film and a second insulating film located between the active layer and the first reflector. The first insulating film and the second insulating film are disposed at a certain distance from each other along the optical path. One of the first insulating film and the second insulating film has a recess, and the other of the first insulating film and the second insulating film has a convex portion.

18. The surface light-emitting device according to claim 17, in, The first insulating film includes a plurality of the recesses. The second insulating film includes one of the aforementioned protrusions, and The luminescent surface emits multiple beams of light by branching at multiple recesses.

19. The surface light-emitting device according to claim 1, comprising: A contact layer is disposed between the active layer and the insulating film.

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