Pvd apparatus capable of realizing in-situ reflow and redeposition of cu and control method thereof

Abstract

The application discloses a PVD equipment capable of realizing Cu in-situ reflow and redeposition and a control method thereof. The PVD equipment comprises a first transfer cavity and a second transfer cavity. The two sides of the first transfer cavity are sequentially arranged with an integrated cavity, a pre-cleaning cavity, a reprocessing process cavity and an in-situ reflow composite processing cavity. The periphery of the second transfer cavity is provided with a plurality of process cavities. The integrated cavity is provided with a first heating module, a cavity water cooling channel, a wafer support frame and a lifting and rotating mechanism. The integrated cavity is provided with three wafer placing positions. The lifting and rotating mechanism can move the wafer support frame between the three wafer placing positions. The in-situ reflow composite processing cavity comprises a cooling base plate, a supporting mechanism and a second heating module. The supporting mechanism is used for supporting the wafer and has rotating and up-down moving functions. The supporting mechanism is provided with three wafer placing positions in the up-down moving direction. The application can solve the problems of micro-hole and joint defects in the deposition of copper interconnection thin film in a high aspect ratio structure, uneven sidewall coverage and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to a PVD (Physical Vapor Deposition) device and a manufacturing method thereof, in particular to a PVD device capable of realizing Cu in-situ reflow and redeposition and a control method thereof. BACKGROUND

[0002] The conventional PVD device adopts independent function chamber design, including loading chamber, heating and degassing chamber, pre-cleaning chamber, process chamber and cooling chamber, etc., and the wafer transmission path in the standard process flow is: into→loading chamber→heating and degassing chamber→pre-cleaning chamber→process chamber→cooling chamber→loading chamber→out; and the standard process flow is: wafer loading→heating and degassing→plasma pre-cleaning→thin film deposition→cooling→wafer out.

[0003] In semiconductor manufacturing, the conventional PVD copper seed layer deposition process is as shown in the figure. Figure 1 First, a SiO2 layer is deposited on a silicon wafer (①SiO2 layer growth), then a deposition channel of copper thin film is etched (②Cu channel etching), and a thin Ta / TaN barrier layer is grown on the surface of the channel to prevent copper diffusion (③Ta / TaN layer). When depositing copper thin film by using the conventional PVD device, uneven coverage of the sidewall in the high aspect ratio deposition channel is prone to occur, which leads to hole or joint defects (④copper deposition). In the prior art, most of the schemes do not perform in-situ processing on the defects generated after the deposition of the copper thin film, but directly transfer the wafer into the subsequent process after cooling, which affects the effect of the subsequent process (such as electroplating), thereby causing the quality and yield of the wafer thin film to decrease. Some schemes perform batch annealing processing on the wafer after PVD, but the annealing and deposition are separated, which leads to the problem of breaking vacuum, and cannot repair local defects. SUMMARY

[0004] The technical problem to be solved by the present application is to provide a PVD device capable of realizing Cu in-situ reflow and redeposition and a control method thereof, which can solve the problems of micro-hole and joint defects, uneven coverage of the sidewall, etc. in the high aspect ratio structure.

[0005] The technical scheme adopted by the present application to solve the above technical problems is to provide a PVD equipment capable of realizing Cu in-situ reflow and redeposition, comprising a first transfer cavity and a second transfer cavity, integrated cavities, pre-cleaning cavities, reprocessing process cavities and in-situ reflow composite processing cavities are arranged in sequence on both sides of the first transfer cavity, a plurality of process cavities are arranged around the second transfer cavity, and the in-situ reflow composite processing cavity is located between the first transfer cavity and the second transfer cavity; a first heating module, a cavity water cooling channel, a wafer support frame and a lifting and rotating mechanism are arranged in the integrated cavity, and three wafer placing positions are arranged in the integrated cavity, which are a first heating position, a first wafer transferring position and a first cooling position; the lifting and rotating mechanism can move the wafer support frame between the three wafer placing positions; the in-situ reflow composite processing cavity comprises a cooling base plate, a supporting mechanism and a second heating module, the supporting mechanism is used to support the wafer and has the functions of rotating and moving up and down, and three wafer placing positions are arranged in the up and down moving direction, which are a second heating position, a second wafer transferring position and a second cooling position.

[0006] Further, the integrated cavity is integrally designed by a loading cavity, a heating and degassing cavity and a cooling cavity, and the integrated cavity comprises a first cavity body; a cavity upper cover is arranged above the first cavity body, and the first heating module is fixedly installed on the cavity upper cover; a quartz plate is fixed inside the first heating module and the first cavity body, the quartz plate, a quartz mounting seat and the first cavity body surround a first layer of vacuum environment inside the cavity, and the quartz plate, the cavity upper cover and a quartz cover plate surround a second layer of vacuum environment inside the cavity.

[0007] Further, the first wafer transferring position is determined according to the extendable position of the mechanical arm at the transfer cavity, the first heating position is located between the first heating module and the first wafer transferring position, and the first cooling position is close to the position of the cavity water cooling channel below the cavity; the second wafer transferring position is determined according to the extendable position of the mechanical arm at the transfer cavity, the second heating position is located between the second heating module and the second wafer transferring position, and the second cooling position is located on the upper surface of the cooling base plate.

[0008] Further, the upper end of the supporting mechanism is a circular ring and is provided with circumferentially distributed supporting points for supporting the wafer, and the inner diameter of the circular ring is greater than the outer diameter of the cooling base plate.

[0009] Further, the second heating module is an infrared heating module, an RF induction heating module, a resistance wire heating module or a high-temperature gas heating module, and for the RF induction heating or resistance wire heating mode, the second heating position is located on the surface of the RF induction heating disc or the resistance wire heating disc.

[0010] The application also provides a control method of the PVD device capable of realizing Cu in-situ reflow and redeposition, which comprises the following steps: S1, wafer heating and degassing: the wafer is transferred into the first wafer transferring position of the integrated cavity, and is moved to the first heating position by the lifting and rotating mechanism; in the moving process, the cavity is simultaneously vacuumized, and the first heating module is opened to perform heating and degassing; after the heating and degassing is completed, the first heating module is closed, and the wafer is moved back to the first wafer transferring position by the lifting and rotating mechanism; the channel between the integrated cavity and the first intermediate cavity is opened, and the wafer is transferred into the first intermediate cavity; S2, wafer pre-cleaning: the wafer is transferred from the first intermediate cavity into the pre-cleaning cavity, and is subjected to plasma pre-cleaning to clean the surface of the wafer for 12-16s, and then is transferred into the first intermediate cavity; S3, wafer transmission: the wafer is transferred from the first intermediate cavity into the in-situ reflow composite processing cavity, and is transferred into the second intermediate cavity through the second wafer transferring position, and then is transferred into the process cavity; S4, wafer Cu film deposition: the wafer is subjected to Cu film deposition in the process cavity, and the wafer after the film deposition is transferred from the process cavity into the second intermediate cavity; S5, wafer Cu film reflow: the wafer is transferred from the second intermediate cavity into the in-situ reflow composite processing cavity, the second heating module is opened, and the cavity is vacuumized, so that the wafer is rapidly heated to the reflow temperature; S6, wafer cooling: the supporting mechanism in the in-situ reflow composite processing cavity is controlled to move downward, and is moved to below the cooling base plate, the wafer is placed on the second cooling position on the cooling base plate, water in the cooling base plate is used to cool the wafer, and after the wafer is cooled to a temperature <100℃, the supporting mechanism is moved upward to move the wafer to the second wafer transferring position, and then the wafer is transferred out of the in-situ reflow composite processing cavity and reaches the first intermediate cavity; S7, wafer secondary deposition: the wafer is transferred from the first intermediate cavity into the reprocessing process cavity to perform secondary deposition of the copper film; S8, wafer secondary cooling: the wafer after the secondary deposition is transferred into the integrated cavity through the first intermediate cavity to cool the wafer to below 100℃; S9, wafer transmission: after the wafer is cooled, the wafer is moved from the first cooling position to the first wafer transferring position, and is transferred out of the PVD device.

[0011] Further, in the moving process, the cavity is simultaneously vacuumized to 5-7torr, the first heating module adopts infrared radiation lamp array capable of rapid temperature rising and falling, so that the wafer is heated to 300℃ within 10s, and is maintained at 300℃ to perform heating and degassing; after the heating and degassing is completed, the first heating module is closed, and the vacuumization is continuously performed until the cavity vacuum degree is ≤1×10^-6torr.

[0012] Further, the step S5 comprises the following steps: firstly, the wafer is transferred from the second intermediate cavity into the second wafer transferring position of the in-situ reflow composite processing cavity; then, the supporting mechanism is moved upward, the wafer enters the second heating position, the cavity is vacuumized to 5-7torr, and the second heating module is opened; in the reflow process, the temperature of the wafer surface is monitored in real time by the temperature monitoring system, and the power of the heating module is controlled in real time by the PLC to adjust the temperature of the wafer surface.

[0013] Further, the step S5 takes 200~300℃ for the reflow temperature and 20~40s for the heating time for the thin film of <30nm, and takes 300~400℃ for the reflow temperature and 50~70s for the heating time for the thin film of ≥30nm.

[0014] Further, the step S8 includes that the wafer after the secondary deposition is transferred from the first wafer transferring position to the first cooling position by the lifting and rotating mechanism in the integrated cavity, the first cavity is filled with air to the atmospheric pressure, the gas flow channel and the lower water cooling channel are opened, the gas flow speed is between 150~200SLM, the water cooling flow is between 5~10L / min, and the wafer cooling time to below 100℃ is within 30s.

[0015] The PVD equipment and the control method thereof provided by the application have the following beneficial effects: the PVD equipment and the control method thereof provided by the application have the Cu in-situ reflow function, realize the full-vacuum consecutive processing of deposition-reflow-secondary deposition, improve the thin film quality under the condition of not breaking the vacuum, improve the wafer yield, and prolong the device service life. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 It is a current Cu thin film deposition process flow chart;

[0017] Figure 2 It is a structure schematic view of the PVD equipment which can realize Cu in-situ reflow and secondary deposition of the application;

[0018] Figure 3 It is a basic structure schematic view of the integrated cavity of the application;

[0019] Figure 4 It is a basic structure schematic view of the in-situ reflow composite processing cavity of the application;

[0020] Figure 5 It is a schematic view of Cu thin film reflow and deposition effect of the application.

[0021] The figure is marked as: 1 / 1', integrated cavity; 2 / 2', pre-cleaning cavity; 3 / 3', reprocessing process cavity; 4 / 4', process cavity; 5, first transfer cavity; 5', second transfer cavity; 6 / 6', in-situ backflow composite processing cavity; 7, first cavity; 8, wafer support frame; 9, wafer; 10, quartz plate; 11, quartz mounting seat; 12, quartz cover plate; 13, cavity upper cover; 14, first heating module; 15, cavity water cooling channel; 16, lifting and rotating mechanism; 17, sliding block; 18, motor; 19, first heating position; 20, first wafer transfer position; 21, first cooling position; 22, cooling base; 23, second cavity; 24, support mechanism; 25, second heating module; 26, temperature monitoring system; 27, second heating position; 28, second wafer transfer position; 29, second cooling position. DETAILED DESCRIPTION

[0022] The application will be further described below in combination with the drawings and examples.

[0023] Figure 2 The PVD equipment structure for realizing in-situ backflow and redeposition of Cu.

[0024] Please see Figure 2 The PVD equipment for realizing in-situ backflow and redeposition of Cu provided by the application comprises an integrated cavity 1 / 1', a pre-cleaning cavity 2 / 2', a reprocessing process cavity 3 / 3', a process cavity 4 / 4', a transfer cavity 5 / 5', and an in-situ backflow composite processing cavity 6 / 6'.

[0025] In the application, the integrated cavity 1 / 1' is designed in an integrated manner of loading cavity+heating and degassing cavity+cooling cavity, so that it has the functions of loading, heating and degassing, and cavity cooling, and its basic structure is as shown in Figure 3As shown, including the first cavity 7, wafer support frame 8, wafer 9, quartz plate 10, quartz mounting seat 11, quartz cover plate 12, cavity upper cover 13, first heating module 14, cavity water cooling channel 15, lifting and rotating mechanism 16, slider 17, motor 18, and three wafer placement positions with integrated functions, including the first heating position 19, the first wafer transfer position 20, and the first cooling position 21. The first wafer transfer position 20 is determined according to the retractable position of the mechanical hand at the transfer cavity, preferably the middle position of the first cavity 7; the first heating position 19 is located between the first heating module 14 and the first wafer transfer position 20, preferably the middle position of the first heating module 14 and the first wafer transfer position 20; the first cooling position 21 is selected to be the position closest to the cavity water cooling channel 15 below the cavity, and during the wafer cooling process, the first cavity 7 is simultaneously cooled by air cooling and cavity water cooling. The wafer 9 and the wafer support frame 8 are moved and changed in the three placement positions by the lifting and rotating mechanism 16. The first cavity 7 is provided with a cavity upper cover 13 above for mounting and fixing the first heating module 14 (such as infrared lamp array); the first heating module 14 and the first cavity 7 are fixed with a quartz plate 10 inside, preferably transparent quartz with a transmittance ≥93%, and the quartz plate 10, the quartz mounting seat 11 and the first cavity 7 form the first layer of vacuum environment inside the cavity, reducing the size of the vacuum environment space of the wafer 9, reducing the internal charging and pumping time, and improving the efficiency.

[0026] In the present application, the reprocessing process cavity 3 / 3' is a process cavity for Cu secondary deposition after in-situ reflow, used for growing a simple thin film after in-situ reflow, further improving the quality of the thin film, and the basic structure is consistent with that of the process cavity in the traditional PVD equipment.

[0027] In the present application, the in-situ reflow composite processing cavity 6 / 6' is a modification of the cooling cavity in the traditional PVD equipment, which has the functions of in-situ reflow and cooling. The modification method is to add a heating module, including but not limited to infrared heating, RF induction heating, resistance wire heating, high-temperature gas heating, etc., on the basis of the internal cooling bottom plate of the traditional cooling cavity, and equip with a corresponding temperature monitoring system. The basic structure of the in-situ reflow composite processing cavity is shown in Figure 4As shown, including cooling base 22, second cavity 23, support mechanism 24, wafer 9, second heating module 25, temperature monitoring system 26. Wherein the support mechanism 24 has rotating or up and down movement function, the upper end of the support mechanism 24 is a circular ring and is equipped with circumferentially distributed support points for supporting the wafer, the inner diameter of the circular ring is larger than the outer diameter of the cooling base 22. The moving position of the support mechanism 24 is equipped with the corresponding second heating position 27, the second wafer transfer position 28, and the second cooling position 29. Among them, the second wafer transfer position 28 is determined according to the retractable position of the mechanical hand at the transfer cavity, preferably the middle position of the cavity; the second heating position 27 is located between the second heating module 25 and the second wafer transfer position 28, preferably the middle position of the second heating module 25 and the second wafer transfer position 28, for RF induction heating or resistance wire heating disc heating, then the second heating position 27 is located on the surface of the heating disc; the second cooling position 29 is located on the upper surface of the cooling base 22.

[0028] The present application further provides a process flow of the improved PVD equipment platform:

[0029] Incoming→Integrated cavity 1 / 1' (first wafer transfer position 20→first heating position 19→first wafer transfer position 20)→first transfer cavity 5→pre-cleaning cavity 2 / 2'→first transfer cavity 5→in-situ reflow composite processing cavity 6 / 6' (second wafer transfer position 28)→second transfer cavity 5'→process cavity 4 / 4'→second transfer cavity 5'→in-situ reflow composite processing cavity 6 / 6' (second wafer transfer position 28→second heating position 27→second cooling position 29→second wafer transfer position 28)→first transfer cavity 5→reprocessing process cavity 3 / 3'→first transfer cavity 5→integrated cavity 1 / 1' (first wafer transfer position 20→first cooling position 21→first wafer transfer position 20)→outgoing.

[0030] (1) Wafer heating and degassing: the wafer 9 is transferred into the first wafer transfer position 20 of the integrated cavity, moved to the first heating position 19 by the lifting and rotating mechanism 16, and in the moving process, the chamber is simultaneously pumped to 5~7torr, and the first heating module 14 is turned on, an infrared radiation lamp array capable of rapid temperature rise and fall is adopted, the wafer is heated to 300℃ within 10s, and after maintaining the temperature of 300℃ for about 30s (heating and degassing), the first heating module 14 is turned off, and at the same time, the vacuum degree of the cavity is continuously pumped to ≤1×10^-6torr, and the wafer 9 is moved back to the first wafer transfer position 20 by the lifting and rotating mechanism 16. The channel of the integrated cavity and the first transfer cavity 5 is opened, and the wafer 9 is transferred into the first transfer cavity 5.

[0031] (2) Wafer pre-cleaning: the wafer 9 is transferred from the first transfer cavity 5 into the pre-cleaning cavity 2 / 2', and plasma pre-cleaning is performed to clean the surface of the wafer 9, which takes about 12~16s, and then the wafer 9 is transferred into the first transfer cavity 5.

[0032] (3) Wafer transfer: the wafer 9 enters the in-situ reflow composite processing cavity 6 / 6' from the first transfer cavity 5, and is transferred into the second transfer cavity 5' through the second wafer transfer site 28, and then enters the process cavity 4 / 4'.

[0033] (4) Cu film deposition on wafer: the wafer 9 is subjected to Cu film deposition in the process cavity 4 / 4', and the surface effect of the wafer after deposition is shown as a in Figure 5 , there are relatively sharp protrusions outside the channel of the wafer deposition trench, the internal side wall of the trench is not uniformly covered as a whole, and there are hole and joint defects inside, and the wafer 9 after film deposition is transferred from the process cavity into the second transfer cavity 5'.

[0034] (5) Cu film reflow on wafer: the wafer 9 is transferred from the second transfer cavity 5' into the in-situ reflow composite processing cavity 6 / 6', first at the second wafer transfer site 28, then the support mechanism 24 is moved up, the wafer 9 enters the second heating site 27, at the same time the cavity is pumped to 5~7torr and the second heating module 25 is turned on, the wafer 9 is quickly heated to the reflow temperature. During the reflow process, the temperature of the wafer 9 surface can be monitored in real time through the temperature monitoring system 26, and the heating module power is controlled in real time through the PLC to adjust the wafer surface temperature. During the reflow process, the reflow parameters are automatically matched according to the requirements through the host computer, PLC and temperature monitoring system 26, such as for <30nm film, the reflow temperature is 200~300℃, the heating time is about 20-40s, preferably 30s; for ≥30nm film, the reflow temperature is 300~400℃, the heating time is about 50-70s, preferably 60s. The surface state of the wafer 9 after in-situ reflow is shown as b in Figure 5 , the Cu outside the channel of the deposition trench flows into the trench, the Cu film is empty outside the channel, but the internal side wall of the trench is uniformly covered, and the hole and joint defects are basically eliminated.

[0035] (6) Wafer cooling: the support mechanism 24 in the in-situ reflow composite processing cavity 6 / 6' is lowered, the wafer 9 moves from the second heating site 27 to the second cooling site 29, the support mechanism 24 continues to be lowered to below the cooling base plate 22, the wafer 9 is placed on the cooling base plate 22, the cooling base plate 22 is internally water-cooled to cool the wafer 9, and after cooling to a temperature <100℃, the support mechanism 24 is moved up to move the wafer 9 to the second wafer transfer site 28, and then the wafer 9 is transferred out of the in-situ reflow composite processing cavity 6 / 6' to the first transfer cavity 5.

[0036] (7) wafer secondary deposition: wafer 9 is transferred from the first transfer cavity 5 to the reprocessing cavity 3 / 3', and the secondary deposition of copper film is performed. For a copper deposition process with a total thickness requirement of α nm, the thickness of the primary deposition on the outer side of the trench channel is about (α-10) nm, and the thickness is reduced to (α-30~α-20) nm after reflow, so the relative secondary deposition thickness is generally set to (α-20~α-10) nm. For example, for a copper deposition process with a total thickness requirement of 40 nm, the thickness of the primary deposition on the outer side of the trench channel is about 30 nm, and the thickness is reduced to 10~20 nm after reflow, so the relative secondary deposition thickness is generally set to 20~30 nm. The wafer surface film effect after secondary deposition is shown as c in FIG. 6, the Cu film vacancy on the outer side of the trench channel is supplemented, the overall surface Cu film is uniformly covered, and there is no obvious defect. Figure 5

[0037] (8) wafer secondary cooling: the wafer 9 after secondary deposition is transferred into the integration cavity 1 / 1' through the first transfer cavity 5, and the wafer 9 is transferred from the first wafer transfer position 20 to the first cooling position 21 through the lifting and rotating mechanism 16. The first cavity 7 is filled with air to atmospheric pressure, and the gas flow channel and the lower water cooling channel are opened. The gas flow speed is between 150~200 SLM, the water cooling flow is between 5~10 L / min, and the wafer 9 is cooled to below 100℃ within 30s.

[0038] (9) wafer transfer out: after the wafer 9 is secondary cooled, the wafer 9 is moved from the first cooling position 21 to the first wafer transfer position 20, and the wafer 9 is transferred out of the entire PVD system.

[0039] After the deposition-reflow-redeposition process, the copper deposition effect of the deep-width ratio range can be increased from 4:1 to 8:1 and above.

[0040] Further, the above process parameters and process flow of the present application can be appropriately modified according to actual needs to adapt to the best PVD process effect. For example, for the case where the trench aspect ratio is >8:1, a multi-stage reflow and secondary deposition cycle can be used to improve the reflow and deposition effect. For example, a special reflow curve can be customized for different thin film materials or different process requirements, and the reflow process is controlled by a closed-loop temperature control system, including but not limited to multi-stage reflow.

[0041] Further, the temperature monitoring method of the present application is not limited to any temperature measuring instrument, including but not limited to infrared temperature measuring instrument, thermocouple, optical pyrometer, thermal imager, etc. The temperature monitoring method of the present application is that the temperature measuring device monitors the surface temperature of the wafer in real time, and feeds back to the PLC, and adjusts the input power of the heating module in real time through PID calculation, so as to approach and reach the required target temperature, and maintain a certain holding time.

[0042] ​Further, the heating module position of the present application is not limited to above the cavity, but can be replaced by any reasonable heating position, including but not limited to the cavity sidewall, the cavity bottom, etc. The heating mode of the present application is not limited to infrared heating, but also includes but is not limited to resistance wire heating, electromagnetic induction heating, etc.

[0043] Further, the rotation or up-down movement function of the lifting-rotating mechanism 16 and the support mechanism 24 needs to be realized by a precise mechanical transmission system, for example, a servo motor driven screw nut mechanism or a gear and rack mechanism, to ensure the movement precision and stability of the support mechanism. The position precision of the heating position, the transferring position and the cooling position is crucial to the stability and repeatability of the process. During the equipment installation and debugging process, high-precision measuring instruments (such as laser range finder, three-coordinate measuring instrument, etc.) need to be used for accurate calibration to ensure that the error of each position is within the specified range (±0.1mm).

[0044] Further, the PVD equipment integrated with in-situ reflow function of the present application can be used for in-situ reflow of metal thin film (such as Cu, etc.), and also includes but is not limited to in-situ annealing of metal thin film (such as Al, Cu, etc.) and other processing requirements.

[0045] Although the present application has been disclosed with the preferred embodiments as above, it is not intended to limit the present application, and any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present application, therefore the protection scope of the present application shall be defined by the claims.

Claims

1. A PVD apparatus capable of in-situ Cu reflux and redeposition, characterized in that, The system includes a first transfer chamber (5) and a second transfer chamber (5'). The first transfer chamber (5) is arranged with an integrated chamber (1 / 1'), a pre-cleaning chamber (2 / 2'), a reprocessing chamber (3 / 3'), and an in-situ reflow composite processing chamber (6 / 6') on both sides. The second transfer chamber (5') is surrounded by several process chambers (4 / 4'). The in-situ reflow composite processing chamber (6 / 6') is located between the first transfer chamber (5) and the second transfer chamber (5'). The integrated chamber is provided with a first heating module (14), a chamber water cooling channel (15), a wafer support frame (8), and a lifting and rotating mechanism (16). The integrated chamber is provided with three wafer placement positions, namely a first heating position (19), a first wafer transfer position (20), and a first cooling position (21). The lifting and rotating mechanism (16) can move the wafer support frame (8) between the three wafer placement positions. The in-situ reflow composite processing cavity (6 / 6') includes a cooling chassis (22), a support mechanism (24), and a second heating module (25). The support mechanism (24) is used to support the wafer (9) and has rotation and up-down movement functions. It is equipped with three wafer placement positions in the up-down movement direction, namely the second heating position (27), the second wafer transfer position (28), and the second cooling position (29).

2. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, is characterized in that... The integrated cavity (1 / 1') is designed as an integrated loading cavity, heating and degassing cavity and cooling cavity. The integrated cavity includes a first cavity (7); a cavity cover (13) is provided above the first cavity (7), and the first heating module (14) is installed and fixed on the cavity cover (13); a quartz plate (10) is fixed inside the first heating module (14) and the first cavity (7). The quartz plate (10), the quartz mounting base (11) and the first cavity (7) form a first vacuum environment inside the cavity. The quartz plate (10), the cavity cover (13) and the quartz cover plate (12) form a second vacuum environment inside the cavity.

3. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, is characterized in that... The first transfer position (20) is determined according to the extendable position of the robot arm at the transfer cavity. The first heating position (19) is located between the first heating module (14) and the first transfer position (20). The first cooling position (21) is located near the water cooling channel (15) of the cavity below the cavity. The second transfer position (28) is determined according to the extendable position of the robot arm at the transfer cavity. The second heating position (27) is located between the second heating module (25) and the second transfer position (28). The second cooling position (29) is located on the upper surface of the cooling chassis (22).

4. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, is characterized in that... The upper end of the support mechanism (24) is a ring and is equipped with circumferentially distributed support points to support the wafer. The inner diameter of the ring is larger than the outer diameter of the cooling base (22).

5. The PVD equipment as described in claim 1, capable of in-situ Cu reflux and redeposition, characterized in that, The second heating module (25) is an infrared heating module, an RF induction heating module, a resistance wire heating module or a high-temperature gas heating module. For RF induction heating or resistance wire heating, the second heating position (27) is located on the surface of the RF induction heating plate or the resistance wire heating plate.

6. A control method for a PVD apparatus capable of in-situ Cu reflux and redeposition as described in any one of claims 1-5, characterized in that, Includes the following steps: S1. Wafer heating and degassing: The wafer (9) is transferred to the first transfer position (20) of the integrated cavity (1 / 1'), and moved to the first heating position (19) by the lifting and rotating mechanism (16). During the movement, the cavity is evacuated and the first heating module (14) is turned on for heating and degassing. After the heating and degassing is completed, the first heating module (14) is turned off, and the wafer (9) is moved back to the first transfer position (20) by the lifting and rotating mechanism (16). The channel between the integrated cavity (1 / 1') and the first transfer cavity (5) is opened, and the wafer (9) is transferred to the first transfer cavity (5). S2. Wafer pre-cleaning: The wafer (9) is transferred from the first transfer cavity (5) to the pre-cleaning cavity (2 / 2') for plasma pre-cleaning. The surface of the wafer (9) is cleaned for 12~16s, and then transferred to the first transfer cavity (5). S3, Wafer transfer: The wafer (9) enters the in-situ reflow composite processing cavity (6 / 6') from the first transfer cavity (5), and is transferred to the second transfer cavity (5') through the second transfer position (28), and then enters the process cavity (4 / 4'); S4. Wafer Cu thin film deposition: Wafer (9) is deposited with Cu thin film in process cavity (4 / 4'), and the wafer (9) after film deposition is transferred from process cavity to second transfer cavity (5'). S5, Wafer Cu Thin Film Reflow: The wafer (9) is transferred from the second transfer chamber (5') to the in-situ reflow composite processing chamber (6 / 6'), the second heating module (25) is turned on and the chamber is evacuated at the same time, so that the wafer (9) is heated to the reflow temperature quickly; S6. Wafer Cooling: Control the support mechanism (24) in the in-situ reflow composite processing cavity (6 / 6') to move down to below the cooling chassis (22). The wafer (9) is placed in the second cooling position (29) on the cooling chassis (22). Water is circulated inside the cooling chassis (22) to cool the wafer (9). After cooling to a temperature <100℃, the support mechanism (24) moves up to move the wafer (9) to the second transfer position (28). Then the wafer (9) is transferred out of the in-situ reflow composite processing cavity (6 / 6') and arrives at the first transfer cavity (5). S7. Secondary Wafer Deposition: The wafer (9) is transferred from the first transfer cavity (5) to the reprocessing cavity (3 / 3') for secondary copper film deposition. S8. Secondary cooling of wafer: After secondary deposition, the wafer (9) is transferred to the integrated cavity (1 / 1') through the first transfer cavity (5) to cool the wafer (9) to below 100°C; S9, Wafer Transfer: After the wafer (9) is cooled twice, it moves from the first cooling position (21) to the first transfer position (20) and is transferred out of the entire PVD equipment.

7. The control method as described in claim 6, characterized in that, In step S1, the chamber is simultaneously evacuated to 5-7 torr during the movement process. The first heating module (14) uses an infrared radiation lamp array that can rapidly heat up and cool down, so that the wafer (9) is heated to 300°C within 10s and maintained at 300°C for heating and degassing. After the heating and degassing is completed, the first heating module (14) is turned off, and the chamber is continuously evacuated to ≤1×10^-6 torr.

8. The control method as described in claim 6, characterized in that, Step S5 includes: first, the wafer (9) is transferred from the second transfer cavity (5') to the second transfer position (28) of the in-situ reflow composite processing cavity (6 / 6'), then the support mechanism (24) moves upward, the wafer (9) enters the second heating position (27), and at the same time, the cavity is evacuated to 5~7 torr and the second heating module (25) is turned on; during the reflow process, the temperature of the wafer (9) surface is monitored in real time by the temperature monitoring system (26), and the power of the heating module is controlled in real time by the PLC to adjust the wafer surface temperature.

9. The control method as described in claim 8, characterized in that, For films <30nm, step S5 involves a reflow temperature of 200~300℃ and a heating time of 20~40s; for films ≥30nm, the reflow temperature is 300~400℃ and the heating time is 50~70s.

10. The control method as described in claim 6, characterized in that, Step S8 includes: the wafer (9) after secondary deposition is transferred from the first wafer transfer position (20) to the first cooling position (21) in the integrated cavity (1 / 1') by the lifting and rotating mechanism (16). The first cavity (7) is filled with gas to atmospheric pressure, and the gas flow channel and the lower water cooling channel are opened at the same time. The gas flow rate is between 150 and 200 SLM, and the water cooling flow rate is between 5 and 10 L / min, so that the wafer (9) is cooled to below 100°C within 30 seconds.

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