A cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof

Abstract

The application relates to the technical field of chemical vapor deposition equipment, and discloses a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof, which comprises a CVD reactor 1, a reaction part 2 is arranged in the CVD reactor 1, the reaction part 2 is a basic bearing and process adaptation structure of the CVD reactor 1, provides a temperature environment required by reaction, assists in gathering residues to a recovery area, provides an electrode basis for subsequent vacuum electrolytic cleaning, the reaction part 2 comprises a heating plate 21, the heating plate 21 is installed in the CVD reactor 1 in the form of an annular array, two cross beams 22 are connected in the CVD reactor 1, a guide plate 23 is symmetrically installed between the two cross beams 22, oxidative free radicals are generated by the vacuum electrolysis effect of a spiral electrode to oxidize metal oxide residues, ultraviolet lamps and a light-transmitting column array form global photolysis irradiation, and the two cooperate to realize efficient decomposition of multiple types of residues such as carbon-based and metal-based residues, and the problem of poor adaptability of traditional single cleaning technology is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical vapor deposition equipment, in particular to a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof. BACKGROUND

[0002] As a core process in the fields of semiconductor manufacturing, photovoltaic thin film preparation, and functional coating synthesis, chemical vapor deposition technology forms stubborn residues on the inner wall of the reactor, the carrier, the nozzle, and other key components during the reaction process due to incomplete reaction of the precursor, deposition of by-products, and other problems. These residues can lead to a decrease in film deposition uniformity, an increase in defect rate, and even cause serious problems such as reactor pipeline blockage and temperature field disorder, directly affecting production efficiency and product quality. Therefore, efficient cleaning technology for CVD reactors has become a key link to ensure process stability. Currently, existing CVD reactor cleaning technologies mainly include mechanical cleaning and chemical cleaning.

[0003] Mechanical cleaning technology removes residues by contact and friction between mechanical components such as scrapers and brushes and the inner wall of the reactor. Although it can handle thick layers of residues, it can easily scratch or wear the precise surface of the reactor, especially not suitable for equipment with complex cavity structures or nanoscale precision requirements. In addition, the dust generated during the mechanical cleaning process can easily pollute the reaction chamber again, and it is difficult to remove residues in narrow passages, corners, and other areas, with prominent cleaning dead angle problems.

[0004] Chemical cleaning technology relies on the corrosion of strong acids, strong bases, or fluorine-containing etchants to decompose residues. Although it can achieve high cleaning efficiency, chemical reagents can easily corrode the metal cavity or sealing elements of the reactor, leading to a shortened equipment life. In addition, waste liquid treatment requires complex environmental protection processes, which poses a secondary pollution risk. Moreover, for residues containing metal organic compounds, chemical etching can easily produce toxic volatile substances, threatening the safety of operating personnel and not meeting the development trend of green manufacturing.

[0005] In summary, existing CVD reactor cleaning technologies have obvious limitations in cleaning efficiency, environmental friendliness, and residue adaptability, and cannot meet the actual needs of high-precision and multiple types of residue cleaning. Therefore, a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof are proposed to solve the above-mentioned problems. SUMMARY

[0006] (I) Technical problems solved

[0007] In view of the deficiencies of the prior art, the present application provides a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof, which solves the problem of obvious limitations in cleaning efficiency, environmental friendliness, and residue adaptability of existing CVD reactor cleaning technologies.

[0008] (II) Technical solutions

[0009] In order to achieve the above object, the present application provides the following technical scheme: a cleaning device based on a chemical vapor deposition reactor, comprising a CVD reactor, a reaction part is arranged in the CVD reactor, the reaction part comprises a heating plate, the heating plate is installed in the CVD reactor in a ring array, two cross beams are connected in the CVD reactor, guide plates are symmetrically installed between the two cross beams, a light transmission plate is clamped between the two guide plates, a spiral electrode is installed on the heating plate, an installation part is arranged on the reaction part, the installation part comprises a lamp holder, the lamp holder is installed on the light transmission plate, a photolysis part is arranged on the installation part, the photolysis part comprises an ultraviolet lamp, and the ultraviolet lamp is installed on the lamp holder.

[0010] Preferably, the reaction part further comprises a support rod, the support rod is fixedly connected to the light transmission plate, and a feeding table is installed on the support rod.

[0011] Preferably, the installation part further comprises a threaded hole, the threaded hole is formed in the light transmission plate, a limiting hole and a sliding hole are further formed in the light transmission plate, and an arc-shaped baffle is installed on the light transmission plate.

[0012] Preferably, the spiral electrode penetrates through the two guide plates and is located between the outer wall of the arc-shaped baffle and the inner wall of the CVD reactor, and the side of each of the two guide plates close to each other is a bevel structure.

[0013] Preferably, the photolysis part further comprises a sealing sleeve, the sealing sleeve is installed on the outer wall of the CVD reactor, a motor is sealingly installed on the sealing sleeve, an output shaft of the motor is connected with a screw rod, and the screw rod movably penetrates into the CVD reactor.

[0014] Preferably, the end of the screw rod is rotatably connected to the inner wall of the arc-shaped baffle, the screw rod is threadedly connected with the threaded hole, the inner wall of the arc-shaped baffle is fixedly connected with a limiting arm, the limiting arm is an L-shaped structure, and the limiting arm is slidingly connected with the limiting hole.

[0015] Preferably, a light compensation part is arranged on the light transmission plate, the light compensation part comprises a sliding frame, the sliding frame is an U-shaped structure, the lug end of the sliding frame is slidingly connected with the sliding hole, a prismatic frame is fixedly connected to the lug end of the sliding frame, a light transmission column is fixedly connected to the prismatic frame, and the light transmission column is arranged in a prismatic array.

[0016] Preferably, a support is fixedly connected to the inner wall of the prismatic frame, a suction disc is installed on the support, a chuck is installed on the feeding table, and a gas hole is formed in the chuck.

[0017] Preferably, a vacuum pipe is connected to the CVD reactor, the vacuum pipe is aligned with the center of the chuck and the suction cup, a front cover and a rear cover are installed on the CVD reactor, one end of the spiral electrode is fixed to the outside of the CVD reactor, and the other end of the spiral electrode is fixed to the outside of the rear cover.

[0018] A residue recycling structure of a cleaning device based on a chemical vapor deposition reactor, according to the cleaning device based on the chemical vapor deposition reactor, a recycling part is installed on the arc-shaped baffle, the recycling part includes a sliding arm, the sliding arm is fixedly connected to the inner wall of the arc-shaped baffle, a scraping arm is slidably installed on the sliding arm, a supporting arm is fixedly connected to the scraping arm, and a handle is arranged at the end of the supporting arm.

[0019] (Three) beneficial effects

[0020] Compared with the prior art, the cleaning device based on the chemical vapor deposition reactor and the residue recycling structure thereof have the following beneficial effects:

[0021] 1. The cleaning device based on the chemical vapor deposition reactor and the residue recycling structure thereof use the vacuum electrolysis effect of the spiral electrode to generate oxidizing free radicals to oxidize metal oxide residues, the ultraviolet lamp and the light transmission column array form a global photolysis irradiation, and the two cooperate to achieve efficient decomposition of carbon-based, metal-based and other types of residues, solving the poor adaptability problem of traditional single cleaning technology.

[0022] 2. The cleaning device based on the chemical vapor deposition reactor and the residue recycling structure thereof use a non-mechanical contact method of photolysis and electrolysis to remove residues, avoiding scratches and wear of the reactor inner wall, heating plate and other precision components by mechanical cleaning, and ensuring the stability of subsequent deposition processes.

[0023] 3. The cleaning device based on the chemical vapor deposition reactor and the residue recycling structure thereof use the light transmission column array to introduce ultraviolet light into narrow channels, corners and other areas through directional conduction, and cooperate with the residue gathering effect of the arc-shaped baffle to solve the problem of dead angle residues in traditional cleaning.

[0024] 4. The cleaning device based on the chemical vapor deposition reactor and the residue recycling structure thereof use green and environmentally friendly chemicals without strong acids, strong bases and other chemicals, the cleaning products are harmless small molecules such as carbon dioxide and water, and the residues are recycled through negative pressure and mechanical scraping, which meets the green manufacturing trend and reduces the cost of waste liquid treatment.

[0025] 5. The cleaning device based on the chemical vapor deposition reactor and the residue recycling structure thereof use light transmission plate lifting adjustment, light compensation part expansion and contraction and other designs to adapt to different sizes of reactors and residue distribution scenarios, and improve the universality of the device.

[0026] 6. The cleaning device based on the chemical vapor deposition reactor and the residue recovery structure thereof, which adopts the arc-shaped baffle protection, negative pressure fixation, leakage prevention of the sealing sleeve and other structural designs, reduces the damage of the cleaning process to the equipment, and prolongs the overall service life of the CVD reactor. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 A front side view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0028] Figure 2 A rear side view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0029] Figure 3 A CVD reactor internal view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0030] Figure 4 A heating plate view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0031] Figure 5 A light transmission plate and loading table connection view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0032] Figure 6 An ultraviolet lamp column and light transmission plate connection view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0033] Figure 7 A prismatic frame view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0034] Figure 8 A recovery part view of a cleaning device based on a chemical vapor deposition reactor and a residue recovery structure thereof according to the present application is provided.

[0035] As shown in the figure: 1, CVD reactor; 2, reaction part; 21, heating plate; 22, crossbeam; 23, guide plate; 24, light transmission plate; 25, support rod; 26, feeding table; 27, spiral electrode; 3, mounting part; 31, lamp holder; 32, screw hole; 33, limiting hole; 34, sliding hole; 35, arc-shaped baffle; 4, photolysis part; 41, sealing sleeve; 42, motor; 43, screw rod; 44, limiting arm; 45, ultraviolet lamp; 5, light compensation part; 51, sliding frame; 52, prismatic frame; 53, support; 54, suction cup; 55, light transmission column; 56, chuck; 6, recovery part; 61, sliding arm; 62, scraping arm; 63, support arm; 64, handle; 7, vacuum pipe; 8, front cover; 9, rear cover. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0037] Please refer to Figures 1-8 The present application provides a technical solution: a cleaning device based on a chemical vapor deposition reactor, comprising a CVD reactor 1, a reaction part 2 is arranged in the CVD reactor 1, which is a basic bearing and process adaptation structure of the CVD reactor 1, providing the temperature environment required for reaction, assisting the aggregation of residues to the recovery area, providing the electrode basis for subsequent vacuum electrolytic cleaning, the reaction part 2 comprises a heating plate 21, the heating plate 21 is installed in the CVD reactor 1 in the form of annular array, two crossbeams 22 are connected in the CVD reactor 1, two guide plates 23 are symmetrically installed between the two crossbeams 22, a light transmission plate 24 is clamped between the two guide plates 23, a spiral electrode 27 is installed on the heating plate 21, a mounting part 3 is arranged on the reaction part 2, which is the core structure of device adjustment and protection, ensuring stable installation of photolysis light source, the mounting part 3 comprises a lamp holder 31, the lamp holder 31 is installed on the light transmission plate 24, the light transmission plate 24 is made of quartz glass material, a photolysis part 4 is arranged on the mounting part 3, which is a photolysis core module for photoelectric cooperative cleaning, directly photolyzing chemical bonds of carbon-based residues, the photolysis part 4 comprises an ultraviolet lamp 45, the ultraviolet lamp 45 is installed on the lamp holder 31.

[0038] In the present application, the reaction part 2 further comprises a support rod 25 fixedly connected to the light-transmitting plate 24, and an upper feeding table 26 is installed on the support rod 25; the installation part 3 further comprises a threaded hole 32 formed in the light-transmitting plate 24, and a limiting hole 33 and a sliding hole 34 are also formed in the light-transmitting plate 24; an arc-shaped baffle 35 is installed on the light-transmitting plate 24, and the spiral electrode 27 is fixedly penetrated through the two guide plates 23 and located between the outer wall of the arc-shaped baffle 35 and the inner wall of the CVD reactor 1, and the side of the two guide plates 23 close to each other is a bevel structure.

[0039] In the present application, the light-decomposing part 4 further comprises a sealing sleeve 41 installed on the outer wall of the CVD reactor 1, and a motor 42 is sealingly installed on the sealing sleeve 41; the output shaft of the motor 42 is connected with a screw rod 43, the screw rod 43 is movably penetrated into the CVD reactor 1, the end of the screw rod 43 is rotatably connected to the inner wall of the arc-shaped baffle 35, the screw rod 43 is threadedly connected with the threaded hole 32, the inner wall of the arc-shaped baffle 35 is fixedly connected with a limiting arm 44, the limiting arm 44 is an L-shaped structure, and the limiting arm 44 is slidingly connected with the limiting hole 33.

[0040] It is worth noting that the light-transmitting plate 24 is provided with a light compensation part 5, which is a ultraviolet ray enhancing and structure fixing module, and the ultraviolet ray is introduced into the reactor corner and other clean dead angles through focusing and directional conduction, so as to make up for the light blind area; the light compensation part 5 comprises a sliding frame 51, the sliding frame 51 is an U-shaped structure, the ear end of the sliding frame 51 is slidingly connected with the sliding hole 34, a prismatic frame 52 is fixedly connected to the ear end of the sliding frame 51, a light-transmitting column 55 is fixedly connected to the prismatic frame 52, the light-transmitting column 55 is made of quartz glass material, the light-transmitting column 55 is arranged in a prismatic array, a support 53 is fixedly connected to the inner wall of the prismatic frame 52, a suction disc 54 is installed on the support 53, a chuck 56 is installed on the upper feeding table 26, and a gas hole is formed in the chuck 56.

[0041] It is worth noting that the CVD reactor 1 is communicated with a vacuum pipe 7, the vacuum pipe 7 is coaxially arranged with the chuck 56 and the suction disc 54, a front cover 8 and a rear cover 9 are installed on the CVD reactor 1, one end of the spiral electrode 27 is fixedly penetrated to the outside of the CVD reactor 1, and the other end of the spiral electrode 27 is fixedly penetrated to the outside of the rear cover 9.

[0042] A residue recycling structure of a cleaning device based on a chemical vapor deposition reactor, according to the above-mentioned cleaning device based on a chemical vapor deposition reactor, an arc-shaped baffle 35 is installed on the light-transmitting plate 24, and the scraped residue is collected in a directional manner through the negative pressure airflow of the vacuum pipe 7, so as to avoid secondary pollution; the recycling part 6 comprises a sliding arm 61 fixedly connected to the inner wall of the arc-shaped baffle 35, a scraping arm 62 slidingly installed on the sliding arm 61, a support arm 63 fixedly connected to the scraping arm 62, and a handle 64 arranged at the end of the support arm 63.

[0043] Working principle, after the normal deposition process of CVD reactor 1 is completed, at this time the device is in the initial standby state, the light transmission plate 24 is clamped between the cross beam 22 through the guide plate 23, located in the lower part of the reactor, the ultraviolet lamp 45 is fixed on the lamp holder 31 of the light transmission plate 24, in the non-working state, the carriage 51 of the light compensation part 5 is connected with the sliding hole 34 of the light transmission plate 24 through the ear end, the prismatic frame 52 and the light transmission column 55 are in the retracted position, not in contact with the feeding table 26, the vacuum pipe 7 is connected with the vacuum pump, the chuck 56 and the suction cup 54 are in the normal pressure state, and the scraping arm 62 of the recovery part 6 is parked on one side of the arc-shaped baffle 35.

[0044] Start the motor 42 of the photolysis part 4, the output shaft of the motor 42 drives the screw rod 43 to rotate, the screw rod 43 is screwed with the screw hole 32 of the light transmission plate 24, and the light transmission plate 24 slides along the limiting arm 44 for guiding, until it reaches the middle area of the reactor, the vacuum pipe 7 starts to pump, and the negative pressure is transmitted to the chuck 56 and the suction cup 54 through the pipeline, the suction cup 54 is tightly attached to the surface of the chuck 56 under the negative pressure suction, at the same time, the carriage 51 slides along the sliding hole 34 to drive the light transmission column 55 on the prismatic frame 52 to pass through the gap of the feeding table 26 in an array form, forming an ultraviolet light enhanced transmission array covering the middle area of the reactor.

[0045] The screw electrode 27 is electrified, and an electrolysis effect is generated in the vacuum environment in the reactor, forming an electrolysis electric field between the outer wall of the arc-shaped baffle 35 and the inner wall of the reactor, exciting the residual gas to generate oxidizing free radicals, and electrolyzing and oxidizing the metal oxide residues on the inner wall of the reactor and the surface of the heating plate 21, so that they are converted into intermediate products that are easy to decompose.

[0046] The ultraviolet lamp 45 is turned on synchronously, the ultraviolet light is transmitted to the inside of the reactor through the quartz glass light transmission plate 24, part of the light directly irradiates the residues on the inside of the arc-shaped baffle 35 and the inner wall of the reactor, and the chemical bonds of the carbon-based residues are broken by using photon energy to make them decomposed into small molecular gaseous products.

[0047] The quartz glass light transmission column 55 on the prismatic frame 52 is distributed in an array form, and the ultraviolet light is directionally transmitted to the corners of the reactor, the bottom of the feeding table 26 and other traditional cleaning dead angles, the local ultraviolet light intensity is improved through light reflection and focusing effect, the photolysis effect on the residues in the narrow area is strengthened, and full-area dead-angle-free cleaning is realized.

[0048] The motor 42 adjusts the height of the light transmission plate 24 through the screw rod 43, drives the ultraviolet lamp 45 and the light transmission column 55 to rise and fall synchronously, so that the ultraviolet light and the electrolysis electric field form a dynamic coupling area, ensuring that the photolysis products and the electrolysis free radicals fully react, and further oxidizing the intermediate products into carbon dioxide, water and volatile metal halides.

[0049] The vacuum tube 7 continuously evacuates, forms a directional airflow inside the reactor, and sucks out the gaseous products and small solid residues generated by photolysis and electrolysis. The remaining residues that are not sucked out will roll down the inclined surface of the guide plate 23 to the arc-shaped baffle 35 for collection. When the photoelectricity and cleaning reach the set time, the ultraviolet lamp 45 and the spiral electrode 27 stop working, the motor 42 drives the light transmission plate 24 to descend and reset, the light transmission column 55 is separated from the feeding table 26 by retracting the prismatic frame 52, the support arm 63 is pulled by the handle 64, the scraping arm 62 slides along the sliding arm 61, and the solid residues accumulated on the inner wall of the arc-shaped baffle 35 are mechanically scraped off.

Claims

1. A cleaning device based on a chemical vapor deposition reactor, comprising a CVD reactor (1), characterized in that: The CVD reactor (1) is provided with a reaction part (2), the reaction part (2) includes a heating plate (21), the heating plate (21) is installed in the CVD reactor (1) in annular array, the CVD reactor (1) is connected with two cross beams (22), two the guide plate (23) is symmetrically installed between the cross beam (22), two the light transmission plate (24) is clamped between the guide plate (23), the heating plate (21) is installed with spiral electrode (27); Reaction part (2) is provided with mounting part (3), the mounting part (3) includes lamp holder (31), the lamp holder (31) is installed on the light transmission plate (24), the mounting part (3) is provided with photolysis part (4), the photolysis part (4) includes ultraviolet lamp (45), the ultraviolet lamp (45) is installed on the lamp holder (31); The mounting part (3) further includes a threaded hole (32), the threaded hole (32) is opened in the light transmission plate (24), the light transmission plate (24) is further provided with a limiting hole (33) and a sliding hole (34), the light transmission plate (24) is installed with arc baffle (35); The light transmission plate (24) is provided with light compensation part (5), the light compensation part (5) includes a sliding bracket (51), the sliding bracket (51) is a U-shaped structure, the ear end of the sliding bracket (51) is connected with the sliding hole (34), the ear end of the sliding bracket (51) is fixedly connected with a prismatic frame (52), the prismatic frame (52) is fixedly connected with a light transmission column (55), and the light transmission column (55) is arranged in a prismatic array.

2. A cleaning apparatus for a chemical vapor deposition reactor according to claim 1, characterized in that: The reaction part (2) further includes a supporting rod (25), the supporting rod (25) is fixedly connected to the light transmission plate (24), and the supporting rod (25) is provided with a feeding table (26).

3. A cleaning apparatus for a chemical vapor deposition reactor according to claim 2, characterized in that: The spiral electrode (27) penetrates through the two guide plates (23) and is located between the outer wall of the arc-shaped baffle (35) and the inner wall of the CVD reactor (1), and the side of the two guide plates (23) close to each other is a bevel structure.

4. A cleaning apparatus for a chemical vapor deposition reactor according to claim 3, characterized in that: The photolysis part (4) further includes a sealing sleeve (41), the sealing sleeve (41) is installed on the outer wall of the CVD reactor (1), the sealing sleeve (41) is sealingly installed with a motor (42), the output shaft of the motor (42) is connected with a screw rod (43), and the screw rod (43) is movably penetrated into the CVD reactor (1).

5. A cleaning apparatus for a chemical vapor deposition reactor according to claim 4, characterized in that: The end of the screw rod (43) is rotatably connected to the inner wall of the arc-shaped baffle (35), the screw rod (43) is threadedly connected with the threaded hole (32), the inner wall of the arc-shaped baffle (35) is fixedly connected with a limiting arm (44), the limiting arm (44) is an L-shaped structure, and the limiting arm (44) is slidably connected with the limiting hole (33).

6. A cleaning apparatus for a chemical vapor deposition reactor according to claim 5, wherein: The inner wall of the prismatic frame (52) is fixedly connected with a support (53), the support (53) is provided with a suction cup (54), the feeding table (26) is provided with a chuck (56), and the chuck (56) is provided with a gas hole.

7. A cleaning apparatus for a chemical vapor deposition reactor according to claim 6, characterized in that: The CVD reactor (1) is communicated with a vacuum pipe (7) installed on it, the vacuum pipe (7) is coaxially arranged with the chuck (56) and the suction cup (54), the CVD reactor (1) is provided with a front cover (8) and a rear cover (9), one end of the spiral electrode (27) is fixedly penetrated to the outside of the CVD reactor (1), and the other end of the spiral electrode (27) is fixedly penetrated to the outside of the rear cover (9).

8. A residue recovery structure of a cleaning apparatus based on a chemical vapor deposition reactor according to any one of claims 1 to 7, characterized by: A recovery part (6) is installed on the arc-shaped baffle (35), the recovery part (6) comprises a sliding arm (61), the sliding arm (61) is fixedly connected to the inner wall of the arc-shaped baffle (35), a scraping arm (62) is slidingly installed on the sliding arm (61), a supporting arm (63) is fixedly connected to the scraping arm (62), and a handle (64) is arranged at the end of the supporting arm (63).

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