A method for temporary bonding and debonding of semiconductor devices

Abstract

The application provides a kind of semiconductor device temporary bonding and debonding method, the method comprises the following steps: (1) the surface of semiconductor device to be processed is provided with high temperature medium layer;Low temperature medium layer is arranged on the surface of carrier;(2) high temperature medium layer and low temperature medium layer are oppositely arranged, and temporary bonding is carried out;(3) after processing the semiconductor device to be processed, thermal slip debonding is carried out;(4) the high temperature medium layer on the surface of semiconductor device is removed, and the temporary bonding and debonding of semiconductor device are completed, to obtain semiconductor device.The application designs the method of temporary bonding and debonding of semiconductor device, further designs the high temperature medium layer and low temperature medium layer, improves the thermal stability of semiconductor device, the accuracy of temporary bonding and debonding and the efficient separation of semiconductor device under high temperature, and improves the yield of semiconductor device.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor packaging technology, specifically relating to a method for temporary bonding and debonding of semiconductor devices. Background Technology

[0002] In the field of semiconductor packaging technology, the packaging quality of semiconductor devices directly affects their performance and reliability. With the increasing complexity and functionality of semiconductor device structures, higher demands are placed on their packaging technologies. Especially given the tendency of high-temperature layer materials to glass up, achieving effective debonding while protecting the semiconductor device has become a significant technical challenge.

[0003] CN118824932A discloses a method for temporary bonding and debonding. The method includes preparing a bonding dielectric layer on a wafer; pre-baking and curing the wafer and the bonding dielectric layer while providing a negative pressure vacuum; placing a carrier on the bonding dielectric layer and performing thermo-press bonding between the wafer and the carrier; wherein the coefficient of thermal expansion of the carrier does not exceed 60% of the coefficient of thermal expansion of the wafer; grinding the wafer to reduce its thickness to a preset thickness value; placing a porous chuck on the side of the wafer facing away from the carrier and performing pyrolytic slip debonding between the wafer and the carrier to separate the wafer from the carrier; and blowing air onto the porous chuck to further separate the wafer from the porous chuck. This technical solution uses pyrolytic slip debonding between the wafer and the carrier, but due to the influence of the bonding dielectric layer material, the prepared wafer is easily damaged during pyrolytic slip debonding, resulting in a low wafer yield.

[0004] In existing technologies, the problem of semiconductor devices being easily damaged under high-temperature operation has not been effectively solved. Meanwhile, packaging efficiency and the reliability of semiconductor devices still need improvement. Therefore, how to provide a method for temporary bonding and debonding of semiconductor devices with high packaging efficiency and reliability has become an urgent technical problem to be solved. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a method for temporary bonding and debonding of semiconductor devices. This invention improves the thermal stability of semiconductor devices, the accuracy of temporary bonding and debonding, and the efficient separation of semiconductor devices at high temperatures through the design of high-temperature and low-temperature dielectric layers, thereby increasing the yield of semiconductor devices.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a method for temporary bonding and debonding of semiconductor devices, the method comprising the following steps:

[0008] (1) A high-temperature dielectric layer is formed on the surface of the semiconductor device to be processed;

[0009] A low-temperature dielectric layer is formed on the surface of the carrier;

[0010] (2) The high-temperature dielectric layer and the low-temperature dielectric layer are arranged opposite each other and temporarily bonded;

[0011] (3) After processing the semiconductor device to be processed, perform thermal slip debonding;

[0012] (4) Remove the high-temperature dielectric layer on the surface of the semiconductor device to complete the temporary bonding and debonding of the semiconductor device and obtain the semiconductor device.

[0013] This invention improves the thermal stability, accuracy of temporary bonding and debonding, and efficient separation of semiconductor devices at high temperatures by designing methods for temporary bonding and debonding of semiconductor devices, and further by designing high-temperature and low-temperature dielectric layers, thereby increasing the yield of semiconductor devices.

[0014] In this invention, the high-temperature dielectric layer provides sufficient mechanical support for the semiconductor device to be processed, enabling it to complete the processing in step (3), and realizes the protection of the semiconductor device under high-temperature operation and efficient separation during the debonding process; the low-temperature dielectric layer is set to ensure that the semiconductor device can smoothly and safely complete the subsequent process, improve the control accuracy of the debonding process, and reduce the risk of damage to the semiconductor device.

[0015] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0016] As a preferred embodiment of the present invention, at the temperature of thermal slip debonding, the viscosity of material A in the high-temperature dielectric layer is ≥10 times (for example, it can be 10 times, 11 times, 12 times, 13 times, 14 times, 15 times, 16 times, 17 times, 18 times, 19 times or 20 times, etc.) the viscosity of material B in the low-temperature dielectric layer.

[0017] Furthermore, at the thermal slip temperature, the viscosity of material A is ≥100 Pa·s (e.g., it can be 100 Pa·s, 200 Pa·s, 400 Pa·s, 600 Pa·s, 800 Pa·s, 1000 Pa·s, 1200 Pa·s, 1400 Pa·s, 1600 Pa·s, 1800 Pa·s, 2000 Pa·s, 2200 Pa·s, or 2500 Pa·s, etc.), or material A remains solid at the thermal slip temperature. The viscosity of material B is 1-150 Pa·s (e.g., it can be 1 Pa·s, 10 Pa·s, 20 Pa·s, 30 Pa·s, 40 Pa·s, 50 Pa·s, 60 Pa·s, 70 Pa·s, 80 Pa·s, 90 Pa·s, 100 Pa·s, 110 Pa·s, 120 Pa·s, 130 Pa·s, 140 Pa·s, or 150 Pa·s, etc.).

[0018] This invention controls the viscosity of material A in the high-temperature dielectric layer to be ≥ 10 times that of material B in the low-temperature dielectric layer at the thermal slip debonding temperature. This allows the high-temperature dielectric layer and the low-temperature dielectric layer to separate during subsequent thermal slip debonding of the semiconductor device, improving the accuracy of temporary bonding and debonding of the semiconductor device and the efficient separation of the semiconductor device at high temperatures, thereby improving the yield of the semiconductor device.

[0019] Preferably, at the thermal slip temperature, the viscosity of material A is 100-1800 Pa·s (e.g., it can be 100 Pa·s, 200 Pa·s, 400 Pa·s, 600 Pa·s, 800 Pa·s, 1000 Pa·s, 1200 Pa·s, 1400 Pa·s, 1600 Pa·s, or 1800 Pa·s, etc.), and the viscosity of material B is 1-150 Pa·s (e.g., it can be 1 Pa·s, 10 Pa·s, 20 Pa·s, 30 Pa·s, 40 Pa·s, 50 Pa·s, 60 Pa·s, 70 Pa·s, 80 Pa·s, 90 Pa·s, 100 Pa·s, 110 Pa·s, 120 Pa·s, 130 Pa·s, 140 Pa·s, or 150 Pa·s, etc.).

[0020] In this invention, there are no special restrictions on the specific selection of material A for preparing the high-temperature dielectric layer. Materials that meet the above requirements are applicable, including but not limited to WLPTB4180, TB1130, and TB1136 produced by Shenzhen Huaxun Semiconductor Materials Co., Ltd. Similarly, in this invention, there are no special restrictions on the specific selection of material B for preparing the low-temperature dielectric layer. Materials that meet the above requirements are applicable, including but not limited to WLPTB1120 and TB1221 produced by Shenzhen Huaxun Semiconductor Materials Co., Ltd.

[0021] As a preferred embodiment of the present invention, the thickness of the high-temperature dielectric layer is 30μm to 100μm, for example, it can be 30μm, 35μm, 40μm, 45μm, 50μm, 55μm, 60μm, 65μm, 70μm, 75μm, 80μm, 85μm, 90μm, 95μm or 100μm, etc.

[0022] Preferably, the thickness uniformity of the high-temperature dielectric layer is ≤8%, for example, it can be 1%, 2%, 3%, 4%, 5%, 6%, 7% or 8%, etc.

[0023] Preferably, the thickness of the cryogenic dielectric layer is 5μm to 70μm, for example, it can be 5μm, 10μm, 15μm, 20μm, 25μm, 30μm, 35μm, 40μm, 45μm, 50μm, 55μm, 60μm, 65μm or 70μm.

[0024] Preferably, the thickness uniformity of the cryogenic medium layer is ≤5%, for example, it can be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5% or 5%, etc.

[0025] This invention improves the accuracy of temporary bonding and debonding of semiconductor devices and the efficient separation of semiconductor devices at high temperatures by controlling the thickness and uniformity of the high-temperature dielectric layer and the thickness and uniformity of the low-temperature dielectric layer within specific ranges, thereby improving the yield of semiconductor devices. If the thickness of the high-temperature dielectric layer is too small, the protection of the semiconductor device in subsequent processes will be poor; if the thickness of the low-temperature dielectric layer is too small, the separation effect between the high-temperature and low-temperature dielectric layers during thermal slip debonding will be poor, resulting in a low yield of semiconductor devices; if the thickness of the low-temperature dielectric layer is too large, adhesive leakage is likely to occur in subsequent temporary bonding and thermal slip debonding processes.

[0026] In this invention, the thickness uniformity of the high-temperature dielectric layer = (maximum thickness of the high-temperature dielectric layer - minimum thickness of the high-temperature dielectric layer) / twice the average thickness of the high-temperature dielectric layer.

[0027] The uniformity of the cryogenic medium layer thickness = (maximum thickness of cryogenic medium layer - minimum thickness of cryogenic medium layer) / twice the average thickness of cryogenic medium layer.

[0028] As a preferred embodiment of the present invention, after the temporary bonding is performed, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate.

[0029] In this invention, the non-interpenetration of the high-temperature dielectric layer and the low-temperature dielectric layer means that after temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier.

[0030] If the thickness of the high-temperature medium layer is ≥10 times the thickness of the intermediate transition layer, and the thickness of the low-temperature medium layer is ≥10 times the thickness of the intermediate transition layer, then it is determined that the high-temperature medium layer and the low-temperature medium layer do not interpenetrate.

[0031] In this invention, by controlling the temporary bonding process, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate, thereby improving the accuracy of temporary bonding and debonding of semiconductor devices and the efficient separation of semiconductor devices at high temperatures, and thus improving the yield of semiconductor devices.

[0032] As a preferred embodiment of the present invention, the method for setting the high-temperature dielectric layer includes coating, baking and cooling of the high-temperature dielectric layer.

[0033] Preferably, the baking temperature of the high-temperature dielectric layer is 120℃~180℃ (e.g., it can be 120℃, 125℃, 130℃, 135℃, 140℃, 145℃, 150℃, 155℃, 160℃, 165℃, 170℃, 175℃ or 180℃, etc.), and the time is 3min~15min (e.g., it can be 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min or 15min, etc.).

[0034] As a preferred embodiment of the present invention, the method for setting the cryogenic medium layer includes coating, baking and cooling of the cryogenic medium layer.

[0035] Preferably, the baking temperature of the low-temperature medium layer is 90℃ to 140℃ (e.g., 90℃, 95℃, 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, 135℃, or 140℃, etc.), and the baking time is 3min to 15min (e.g., 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min, or 15min, etc.).

[0036] It should be noted that the present invention does not impose any special restrictions on the coating method when setting a high-temperature dielectric layer or the cooling temperature after baking the high-temperature dielectric layer. Commonly used coating methods in the art (such as spin coating) and cooling temperatures (such as room temperature 25°C) are all applicable. Similarly, the present invention does not impose any special restrictions on the coating method when setting a low-temperature dielectric layer or the cooling temperature after baking the low-temperature dielectric layer. Commonly used coating methods in the art (such as spin coating) and cooling temperatures (such as room temperature 25°C) are all applicable.

[0037] As a preferred embodiment of the present invention, the temporary bonding temperature is 100℃~150℃, for example, it can be 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, 135℃, 140℃, 145℃ or 150℃, etc.

[0038] Preferably, the pressure of the temporary bonding is 2.5 kPa to 370 kPa, for example, it can be 2.5 kPa, 5 kPa, 10 kPa, 30 kPa, 60 kPa, 80 kPa, 100 kPa, 150 kPa, 200 kPa, 250 kPa, 300 kPa, 350 kPa or 370 kPa.

[0039] Preferably, the temporary bonding time is 2 min to 10 min, for example, it can be 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, or 10 min, etc.

[0040] Preferably, the vacuum degree of the temporary bonding is ≤10Pa, for example, it can be 1Pa, 2Pa, 3Pa, 4Pa, 5Pa, 6Pa, 7Pa, 8Pa, 9Pa or 10Pa, etc.

[0041] As a preferred embodiment of the present invention, the method of thermal slip debonding includes performing thermal slip debonding using a thermal slip debonding device.

[0042] Preferably, the temperatures of the upper and lower heating plates of the thermal sliding debonding device are each independently between 140°C and 160°C, for example, 140°C, 142°C, 144°C, 146°C, 148°C, 150°C, 152°C, 154°C, 156°C, 158°C, or 160°C.

[0043] Preferably, the sliding rate of the thermal slip debonding is ≤5mm / s (the adjustment force of the thermal slip debonding device is ≤5mm / s), for example, it can be 1mm / s, 1.5mm / s, 22mm / s, 2.5mm / s, 3mm / s, 3.5mm / s, 4mm / s, 4.5mm / s or 5mm / s, etc.

[0044] As a preferred embodiment of the present invention, the method for removing the high-temperature dielectric layer on the surface of a semiconductor device includes cleaning or immersion using a solvent.

[0045] It should be noted that the present invention does not impose any special restrictions on the specific choice of solvent, and commonly used solvents in the art are applicable, including but not limited to acetone.

[0046] In this invention, the semiconductor devices to be processed include high-structure wafers, low-bonding-strength structure devices, and other semiconductor devices with specific requirements for thermal stability and debonding accuracy. High-structure wafers refer to semiconductor wafers with complex three-dimensional microscopic or nanoscopic topological structures on their surfaces. Unlike traditional planar wafers, their surfaces have non-planar geometric features formed through processes such as photolithography, etching, and deposition. Examples include: micro-bump / recess structures: cantilever beams, cavities, and fluid channels in MEMS; high aspect ratio structures: such as deep trenches (used in capacitors, isolation trenches), high steps (>10μm), through-holes (TSVs), etc.; heterogeneous integration structures; interconnect lines, electrode or antenna structures, resulting in significant surface height differences. Different semiconductor devices require different processing methods. For example, if the semiconductor device to be processed is a high-structure wafer, the processing methods include at least one of the following: thinning, polishing, resist coating and curing, photolithography and development, electroplating, physical and chemical deposition, metal etching, organic etching, high-voltage permanent bonding, and high-temperature annealing.

[0047] Preferably, the carrier includes a glass carrier or a wafer carrier.

[0048] As a preferred embodiment of the present invention, the method specifically includes the following steps:

[0049] (1) Coating material A on the surface of the semiconductor device to be processed, baking at 120℃~180℃ for 3min~15min, cooling, to obtain a high temperature dielectric layer with a thickness of 30μm~100μm and a thickness uniformity of ≤8%;

[0050] Material B is coated on the surface of the carrier and baked at 90℃~140℃ for 3min~15min, then cooled to obtain a low temperature dielectric layer with a thickness of 5μm~70μm and a thickness uniformity of ≤5%.

[0051] Wherein, at the temperature of thermal slip debonding, the viscosity of material A is ≥ 10 times the viscosity of material B, the viscosity of material A is ≥ 100 Pa·s, and the viscosity of material B is 1-150 Pa·s;

[0052] After the temporary bonding is performed, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate;

[0053] (2) Set the high-temperature medium layer and the low-temperature medium layer opposite each other, and perform temporary bonding for 2 min to 10 min under the conditions of 100℃~150℃, 2.5kPa~370kPa, and vacuum degree ≤10Pa;

[0054] (3) After the semiconductor device to be processed is processed, a hot slip debonding device is used, with the temperature of the upper hot plate and the lower hot plate set to 140℃~160℃ and the slip rate ≤5mm / s, to perform hot slip debonding;

[0055] (4) Use solvent to clean or soak to remove the high-temperature dielectric layer on the surface of the semiconductor device, complete the temporary bonding and debonding of the semiconductor device, and obtain the semiconductor device.

[0056] Compared with the prior art, the present invention has the following beneficial effects:

[0057] This invention designs methods for temporary bonding and debonding of semiconductor devices, and further improves the thermal stability, accuracy of temporary bonding and debonding, and efficient separation of semiconductor devices at high temperatures by designing high-temperature and low-temperature dielectric layers, thereby improving the yield of semiconductor devices. Attached Figure Description

[0058] Figure 1 This is a schematic diagram of the temporary bonding and debonding process of a semiconductor device provided in Embodiment 1 of the present invention;

[0059] Among them, 1-high-structure wafer to be processed, 2-high temperature dielectric layer, 3-low temperature dielectric layer, 4-carrier, 5-intermediate transition layer, 6-high-structure wafer. Detailed Implementation

[0060] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be considered as specific limitations thereof.

[0061] The sources of some components in the following examples and comparative examples are described in Table 1 below:

[0062] Table 1

[0063]

[0064] The following examples and comparative examples use the following method to test the thickness of the high-temperature dielectric layer and the low-temperature dielectric layer before temporary bonding: Before bonding, prepare wafers for baking each dielectric layer into a film, and use a film thickness tester (Filmetrics, F60) to test the average film thickness of the film layer.

[0065] The following embodiments and comparative examples use the following method to test the thickness of the high-temperature dielectric layer, low-temperature dielectric layer, and intermediate transition layer after temporary bonding: the thickness of the high-temperature dielectric layer, intermediate transition layer, and low-temperature dielectric layer is measured using an FIB device based on the image color depth.

[0066] Example 1

[0067] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the flowchart of which is shown below. Figure 1 As shown, the methods for temporary bonding and debonding are as follows:

[0068] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer 1 to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer 2 with a thickness of 70 μm and a thickness uniformity of 5.52%.

[0069] The low-temperature dielectric layer material TB1221 was coated on the surface of the carrier 4, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer 3 with a thickness of 50 μm and a thickness uniformity of 4.82%.

[0070] (2) The high-temperature dielectric layer 2 and the low-temperature dielectric layer 3 are set opposite each other, and temporary bonding is performed for 5 minutes under the conditions of 120℃, 5kPa and vacuum degree ≤10Pa;

[0071] After temporary bonding, a high-temperature dielectric layer 2, an intermediate transition layer 5, and a low-temperature dielectric layer 3 are formed between the high-structure wafer 1 to be processed and the carrier 4; the thickness of the high-temperature dielectric layer 2 is 68 μm, the thickness of the intermediate transition layer 5 is 2.5 μm, and the thickness of the low-temperature dielectric layer 3 is 45 μm.

[0072] (3) The back side of the high-structure wafer 1 to be processed is thinned and polished to 50μm using a wafer thinning and polishing equipment. Then, a hot slip debonding equipment is used, with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s, to perform hot slip debonding.

[0073] (4) Use acetone to soak and clean, remove the high-temperature dielectric layer 2 on the surface of the high-structure wafer 6, complete the temporary bonding and debonding of the high-structure wafer, and obtain the high-structure wafer 6.

[0074] Example 2

[0075] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0076] (1) A high-temperature dielectric layer material TB4180 was coated on the surface of the high-structure wafer to be processed, baked at 160°C for 12 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 40 μm and a thickness uniformity of 2.55%.

[0077] The carrier surface was coated with a low-temperature dielectric layer material TB1120, baked at 120℃ for 12 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 10 μm and a thickness uniformity of 1.80%.

[0078] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 120℃, 4kPa and vacuum degree ≤10Pa;

[0079] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 40 μm, the thickness of the intermediate transition layer is approximately 0 μm (negligible), and the thickness of the low-temperature dielectric layer is 9.8 μm.

[0080] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm. Use a hot slip debonding equipment, set the temperature of the upper and lower hot plates to 150℃ and the slip rate to 1.5mm / s, and perform hot slip debonding.

[0081] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0082] Example 3

[0083] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0084] (1) A high-temperature dielectric layer material TB1136H was coated on the surface of the high-structure wafer to be processed, baked at 150°C for 8 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 100 μm and a thickness uniformity of 7.23%.

[0085] The low-temperature dielectric layer material TB1221 was coated on the surface of the carrier, baked at 130℃ for 8 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 70 μm and a thickness uniformity of 4.82%.

[0086] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 120℃, 5kPa and vacuum degree ≤10Pa;

[0087] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 96 μm, the thickness of the intermediate transition layer is 5 μm, and the thickness of the low-temperature dielectric layer is 64 μm.

[0088] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm. Use a hot slip debonding equipment, set the temperature of the upper and lower hot plates to 140℃ and the slip rate to 2mm / s, and perform hot slip debonding.

[0089] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0090] Example 4

[0091] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0092] (1) A high-temperature dielectric layer material TB1300 was coated on the surface of the high-structure wafer to be processed, baked at 140°C for 12 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 70 μm and a thickness uniformity of 6.30%.

[0093] The low-temperature dielectric layer material TB1136 was coated on the surface of the carrier, baked at 140℃ for 12 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 50 μm and a thickness uniformity of 4.21%.

[0094] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 150℃, 5kPa and vacuum degree ≤10Pa;

[0095] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 67 μm, the thickness of the intermediate transition layer is 4.4 μm, and the thickness of the low-temperature dielectric layer is 46 μm.

[0096] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm. Use a hot slip debonding equipment, set the temperature of the upper and lower hot plates to 160℃ and the slip rate to 1mm / s, and perform hot slip debonding.

[0097] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0098] Example 5

[0099] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0100] (1) A high-temperature dielectric layer material TB1300 was coated on the surface of the high-structure wafer to be processed, baked at 140°C for 12 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 70 μm and a thickness uniformity of 6.23%.

[0101] The low-temperature dielectric layer material TB1136 was coated on the surface of the carrier, baked at 140℃ for 12 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 50 μm and a thickness uniformity of 4.20%.

[0102] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 150℃, 5kPa and vacuum degree ≤10Pa;

[0103] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 68 μm, the thickness of the intermediate transition layer is 4 μm, and the thickness of the low-temperature dielectric layer is 45 μm.

[0104] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm. Use a hot slip debonding equipment, set the temperature of the upper and lower hot plates to 190℃ and the slip rate to 1mm / s, and perform hot slip debonding.

[0105] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0106] Example 6

[0107] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0108] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 70 μm and a thickness uniformity of 5.52%.

[0109] The carrier surface was coated with a low-temperature dielectric layer material TB1221, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 50 μm and a thickness uniformity of 4.24%.

[0110] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 140℃, 5kPa and vacuum degree ≤10Pa;

[0111] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 66 μm, the thickness of the intermediate transition layer is 4.5 μm, and the thickness of the low-temperature dielectric layer is 46 μm.

[0112] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0113] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0114] Example 7

[0115] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0116] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 60 μm and a thickness uniformity of 5.26%.

[0117] The carrier surface was coated with a low-temperature dielectric layer material TB1221, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 50 μm and a thickness uniformity of 4.24%.

[0118] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 140℃, 5kPa and vacuum degree ≤10Pa;

[0119] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 55 μm, the thickness of the intermediate transition layer is 6 μm, and the thickness of the low-temperature dielectric layer is 45 μm.

[0120] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0121] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0122] Example 8

[0123] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0124] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 30 μm and a thickness uniformity of 1.80%.

[0125] The carrier surface was coated with a low-temperature dielectric layer material TB1221, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 5 μm and a thickness uniformity of 1.20%.

[0126] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 120℃, 5kPa and vacuum degree ≤10Pa;

[0127] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 29.9 μm, the thickness of the intermediate transition layer is 0.2 μm, and the thickness of the low-temperature dielectric layer is 4.9 μm.

[0128] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0129] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0130] Example 9

[0131] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0132] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 100 μm and a thickness uniformity of 7.70%.

[0133] The low-temperature dielectric layer material TB1221 was coated on the surface of the carrier, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 70 μm and a thickness uniformity of 4.82%.

[0134] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 140℃, 5kPa and vacuum degree ≤10Pa;

[0135] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 97 μm, the thickness of the intermediate transition layer is 6 μm, and the thickness of the low-temperature dielectric layer is 67 μm.

[0136] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0137] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0138] Example 10

[0139] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0140] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 25 μm and a thickness uniformity of 1.70%.

[0141] The carrier surface was coated with a low-temperature dielectric layer material TB1220, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 5 μm and a thickness uniformity of 1.20%.

[0142] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 120℃, 5kPa and vacuum degree ≤10Pa;

[0143] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 24.9 μm, the thickness of the intermediate transition layer is 0.2 μm, and the thickness of the low-temperature dielectric layer is 4.9 μm.

[0144] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0145] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0146] Example 11

[0147] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0148] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 30 μm and a thickness uniformity of 1.80%.

[0149] The carrier surface was coated with a low-temperature dielectric layer material TB1220, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 3 μm and a thickness uniformity of 1.40%.

[0150] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 140℃, 5kPa and vacuum degree ≤10Pa;

[0151] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 29.9 μm, the thickness of the intermediate transition layer is 0.2 μm, and the thickness of the low-temperature dielectric layer is 2.9 μm.

[0152] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0153] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0154] Example 12

[0155] This embodiment provides a method for temporary bonding and debonding of semiconductor devices, the method of temporary bonding and debonding is as follows:

[0156] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 100 μm and a thickness uniformity of 7.70%.

[0157] The low-temperature dielectric layer material TB1221 was coated on the surface of the carrier, baked at 120℃ for 10 min, and cooled to room temperature to obtain a low-temperature dielectric layer with a thickness of 80 μm and a thickness uniformity of 5.41%.

[0158] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 140℃, 5kPa and vacuum degree ≤10Pa;

[0159] After temporary bonding, a high-temperature dielectric layer, an intermediate transition layer, and a low-temperature dielectric layer are formed between the semiconductor device to be processed and the carrier; the thickness of the high-temperature dielectric layer is 97 μm, the thickness of the intermediate transition layer is 6 μm, and the thickness of the low-temperature dielectric layer is 77 μm.

[0160] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0161] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0162] Comparative Example 1

[0163] This comparative example provides a method for temporary bonding and debonding of semiconductor devices, the method of which is as follows:

[0164] (1) A high-temperature dielectric layer material TB1136 was coated on the surface of the high-structure wafer to be processed, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 70 μm and a thickness uniformity of 5.52%.

[0165] (2) The high-structure wafer to be processed with a high-temperature dielectric layer and the carrier are placed opposite each other, and temporary bonding is performed for 5 minutes under the conditions of 150℃, 5kPa and vacuum degree ≤10Pa.

[0166] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm, and use a hot slip debonding equipment to perform hot slip debonding with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s.

[0167] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0168] Comparative Example 2

[0169] This comparative example provides a method for temporary bonding and debonding of semiconductor devices, the method of which is as follows:

[0170] (1) Coating the carrier surface with low temperature dielectric material TB1221, baking at 120℃ for 10 min, and cooling to room temperature to obtain a low temperature dielectric layer with a thickness of 50 μm and a thickness uniformity of 4.82%.

[0171] (2) The high-structure wafer to be processed and the low-temperature dielectric layer are positioned opposite each other, and temporary bonding is performed for 5 minutes under the conditions of 120℃, 5kPa and vacuum degree ≤10Pa;

[0172] (3) The back side of the high-structure wafer 1 to be processed is thinned and polished to 50μm using a wafer thinning and polishing equipment. Then, a hot slip debonding equipment is used, with the temperature of the upper and lower hot plates set to 150℃ and the slip rate set to 1mm / s, to perform hot slip debonding.

[0173] (4) Use acetone to soak and clean, remove the high-temperature dielectric layer 2 on the surface of the high-structure wafer 6, complete the temporary bonding and debonding of the high-structure wafer, and obtain the high-structure wafer 6.

[0174] Comparative Example 3

[0175] This comparative example provides a method for temporary bonding and debonding of semiconductor devices, the method of which is as follows:

[0176] (1) Coat the surface of the high-structure wafer to be processed with low-temperature dielectric material TB1120, bake at 120℃ for 10 min, and cool to room temperature to obtain a low-temperature dielectric layer with a thickness of 10 μm and a thickness uniformity of 1.80%.

[0177] A high-temperature dielectric layer material TB1121 was coated on the surface of a carrier, baked at 120°C for 10 min, and cooled to room temperature to obtain a high-temperature dielectric layer with a thickness of 50 μm and a thickness uniformity of 4.82%.

[0178] (2) Set the high-temperature dielectric layer and the low-temperature dielectric layer opposite each other, and perform temporary bonding for 5 minutes under the conditions of 120℃, 5kPa and vacuum degree ≤10Pa;

[0179] After temporary bonding, the high-temperature dielectric layer and the low-temperature dielectric layer fuse to form an intermediate transition layer between the semiconductor device to be processed and the carrier, with a thickness of 48 μm.

[0180] (3) Use a wafer thinning and polishing equipment to thin and polish the back side of the high-structure wafer to be processed to 50μm. Use a hot slip debonding equipment, set the temperature of the upper and lower hot plates to 150℃ and the slip rate to 1.5mm / s, and perform hot slip debonding.

[0181] (4) Use acetone to soak and clean the high-temperature dielectric layer on the surface of the high-structure wafer, and complete the temporary bonding and debonding of the high-structure wafer to obtain the high-structure wafer.

[0182] The performance of the high-structure wafers provided in the above embodiments and comparative examples was tested, and the specific test methods are as follows:

[0183] Bonding-to-thinning performance: After wafer bonding, the back side of the silicon wafer is thinned and polished to 80μm using a wafer thinning machine DFG8541 and a chemical mechanical polishing equipment MirraCMP. The probability that the TTV of the thinned wafer is less than 8μm and there are no cracks at the edge is ≥9 / 10, which is considered excellent; between 8 / 10 and 7 / 10 is considered good; and below 7 / 10 is considered poor.

[0184] Debonding separation efficiency: The bond pairs are debonded under the corresponding hot slip temperature (see specific embodiments) and 30N force. Debonding within 1 minute is considered excellent, debonding within 1 to 3 minutes is considered good, and debonding for more than 3 minutes is considered poor.

[0185] Structure yield: At the corresponding thermal slip temperature (see specific implementation example), the bonding pairs are adjusted so that the bonding pairs (10 samples) are debonded within 1 minute. After cleaning, the damage of the high-structure wafer is observed. If all 10 samples are undamaged, it is rated as excellent; if 8-9 samples are undamaged, it is rated as good; and others are rated as poor.

[0186] Processing effect of high-structure wafers: The bonding pair thinning performance, debonding separation efficiency, and yield of high-structure wafers are all excellent, and the processing effect is excellent; There is no difference in the bonding pair thinning performance, debonding separation efficiency, and yield of high-structure wafers, and they are not all excellent, so the processing effect is good; There are differences in the bonding pair thinning performance, debonding separation efficiency, and yield of high-structure wafers, so the processing effect is poor.

[0187] The performance test structure described above is detailed in Table 2 below:

[0188] Table 2

[0189]

[0190]

[0191] As described above, this invention improves the thermal stability, accuracy of temporary bonding and debonding, and efficient separation of semiconductor devices at high temperatures by designing methods for temporary bonding and debonding of semiconductor devices, and further by designing high-temperature and low-temperature dielectric layers, thereby increasing the yield of semiconductor devices. The high-structure wafers prepared using the temporary bonding and debonding methods provided by this invention have a TTV (transformation volume) less than 8 μm after thinning and a probability of ≥7 / 10 of no edge cracks. The bonded pairs can complete hot-slip debonding within 3 minutes at the corresponding hot-slip temperature and 30 N force, and more than 80% of the samples are not damaged after hot-slip debonding.

[0192] As can be seen from the comparison between Examples 1-4 and Example 5, the present invention can further improve the overall performance of semiconductor devices by controlling the viscosity of material A of the high-temperature dielectric layer to be ≥10 times that of material B of the low-temperature dielectric layer at the temperature of thermal slip debonding.

[0193] As can be seen from Examples 1-3 and Examples 6-7, by controlling the temporary bonding, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate, which can further improve the overall performance of the semiconductor device.

[0194] As can be seen from Examples 1 and 8-12, the present invention has prepared a high-performance semiconductor device by controlling the thickness of both the high-temperature dielectric layer and the low-temperature dielectric layer within a specific range.

[0195] This invention controls the viscosity of material A in the high-temperature dielectric layer to be ≥10 times that of material B in the low-temperature dielectric layer at the thermal slip debonding temperature. After temporary bonding, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate. Furthermore, the thickness of both the high-temperature dielectric layer and the low-temperature dielectric layer is controlled within a specific range. The resulting high-structure wafer, after thinning, has a TTV of less than 8 μm and a probability of no edge cracks of ≥9 / 10. The bonded pairs can complete thermal slip debonding within 1 minute under the corresponding thermal slip temperature and 30 N force. After thermal slip debonding, the sample is not damaged.

[0196] As can be seen from Example 1 and Comparative Examples 1-3, the present invention improves the thermal stability of semiconductor devices, the accuracy of temporary bonding and debonding, and the efficient separation of semiconductor devices at high temperatures by designing high-temperature dielectric layers and low-temperature dielectric layers, thereby improving the yield of semiconductor devices.

[0197] In summary, this invention improves the thermal stability, accuracy of temporary bonding and debonding, and efficient separation of semiconductor devices at high temperatures by designing methods for temporary bonding and debonding of semiconductor devices, and further by designing high-temperature and low-temperature dielectric layers, thereby increasing the yield of semiconductor devices.

[0198] The applicant declares that the detailed process flow of this invention is illustrated by the above embodiments, but this invention is not limited to the above detailed process flow, that is, it does not mean that this invention must rely on the above detailed process flow to be implemented. Those skilled in the art should understand that any improvements to this invention, equivalent substitutions of raw materials for the product of this invention, addition of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of this invention.

Claims

1. A method for temporary bonding and debonding of a semiconductor device, characterized in that, The method includes the following steps: (1) A high-temperature dielectric layer is formed on the surface of the semiconductor device to be processed; A low-temperature dielectric layer is formed on the surface of the carrier; (2) The high-temperature dielectric layer and the low-temperature dielectric layer are arranged opposite each other and temporarily bonded; after the temporary bonding is performed, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate; (3) After processing the semiconductor device to be processed, perform thermal slip debonding; (4) Remove the high-temperature dielectric layer on the surface of the semiconductor device to complete the temporary bonding and debonding of the semiconductor device and obtain the semiconductor device; At the temperature of thermal slip debonding, the viscosity of material A in the high-temperature dielectric layer is ≥ 10 times the viscosity of material B in the low-temperature dielectric layer; The thickness of the high-temperature dielectric layer is 30 μm to 100 μm, and the thickness uniformity of the high-temperature dielectric layer is ≤8%. The thickness of the cryogenic medium layer is 5 μm to 70 μm, and the thickness uniformity of the cryogenic medium layer is ≤5%.

2. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, At the temperature of thermal slip debonding, the viscosity of material A in the high-temperature dielectric layer is ≥ 10 times the viscosity of material B in the low-temperature dielectric layer; Furthermore, at the thermal slip temperature, the viscosity of material A is ≥100 Pa·s, and the viscosity of material B is 1-150 Pa·s.

3. The method for temporary bonding and debonding of semiconductor devices according to claim 2, characterized in that, At the thermal slip temperature, the viscosity of material A is 100-1800 Pa·s, and the viscosity of material B is 1-150 Pa·s.

4. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, The method for setting the high-temperature dielectric layer includes coating, baking the high-temperature dielectric layer, and cooling.

5. The method for temporary bonding and debonding of semiconductor devices according to claim 4, characterized in that, The high-temperature dielectric layer is baked at a temperature of 120℃ to 180℃ for a time of 3 min to 15 min.

6. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, The method for setting the cryogenic medium layer includes coating, baking and cooling of the cryogenic medium layer.

7. The method for temporary bonding and debonding of semiconductor devices according to claim 6, characterized in that, The baking temperature of the low-temperature medium layer is 90℃ ~ 140℃, and the time is 3 min ~ 15 min.

8. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, The temporary bonding temperature is 100℃ ~ 150℃, the temporary bonding pressure is 2.5 kPa ~ 370 kPa, the temporary bonding time is 2 min ~ 10 min, and the temporary bonding vacuum degree is ≤10 Pa.

9. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, The method of thermal slip debonding includes performing thermal slip debonding using thermal slip debonding equipment.

10. The method for temporary bonding and debonding of a semiconductor device according to claim 9, characterized in that, The temperatures of the upper and lower heating plates of the thermal sliding debonding device are each independently 140°C to 160°C.

11. The method for temporary bonding and debonding of a semiconductor device according to claim 9, characterized in that, The slip rate of the thermal slip debonding is ≤5 mm / s.

12. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, Methods for removing the high-temperature dielectric layer from the surface of semiconductor devices include cleaning or immersion using solvents.

13. The method for temporary bonding and debonding of semiconductor devices according to claim 1, characterized in that, The method specifically includes the following steps: (1) Coating material A on the surface of the semiconductor device to be processed, baking at 120℃ ~ 180℃ for 3 min ~ 15 min, cooling, to obtain a high temperature dielectric layer with a thickness of 30 μm ~ 100 μm and a thickness uniformity of ≤8%; Material B is coated on the surface of the carrier and baked at 90℃ ~ 140℃ for 3 min ~ 15 min, then cooled to obtain a low temperature dielectric layer with a thickness of 5 μm ~ 70 μm and a thickness uniformity of ≤5%. Wherein, at the temperature of thermal slip debonding, the viscosity of material A is ≥10 times the viscosity of material B, the viscosity of material A is ≥100 Pa·s, and the viscosity of material B is 1-150 Pa·s; After the temporary bonding is performed, the high-temperature dielectric layer and the low-temperature dielectric layer do not interpenetrate; (2) Set the high-temperature medium layer and the low-temperature medium layer opposite each other, and perform temporary bonding for 2 min to 10 min under the conditions of 100℃ ~ 150℃, 2.5 kPa ~ 370 kPa, and vacuum degree ≤10 Pa; (3) After the semiconductor device to be processed is processed, a hot slip debonding device is used, and the temperature of the upper hot plate and the lower hot plate are set to 140℃ ~ 160℃ and the slip rate is ≤5mm / s, respectively, to perform hot slip debonding; (4) Use solvent to clean or soak to remove the high-temperature dielectric layer on the surface of the semiconductor device, complete the temporary bonding and debonding of the semiconductor device, and obtain the semiconductor device.

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