Semiconductor device structure and forming method thereof
By introducing a Poly-Si/SiC heterojunction diode structure inside the SiC MOSFET device, the problem of poor body diode characteristics in SiC MOSFET devices is solved, the switching dynamic characteristics and reliability of the device are improved, and the process flow is simplified.
CN120957481APending Publication Date: 2025-11-14INVENTCHIP TECH CO LTD
0 Cites 0 Cited by
Patent Information
- Application Number
- CN202511106260.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-07
- Publication Date
- 2025-11-14
AI Technical Summary
Technical Problem
The poor body diode characteristics of SiC MOSFET devices lead to reduced system efficiency and reliability issues under high current conditions. Existing solutions integrate Schottky diodes in the device body region, increasing cell size and process complexity.
Method used
Introducing a Poly-Si/SiC heterojunction diode structure into some cells inside a SiC MOSFET device to replace the traditional metal/SiC Schottky diode improves the bulk diode characteristics and reliability.
Benefits of technology
Without changing the cell structure and size, the body diode characteristics and reliability of SiC MOSFET devices are improved, avoiding additional process complexity and cell size increase.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention particularly relates to a semiconductor device structure and a forming method thereof. According to the method, a part of a gate oxide layer is removed, and a first material epitaxial layer is exposed to serve as a cathode material of a heterojunction diode structure; a second material layer is formed, the part, formed on the exposed first material epitaxial layer, of the second material layer serves as an anode material of the heterojunction diode structure, and the part, formed on the gate oxide layer, of the second material layer serves as a gate electrode medium; and carrying out graphical processing on the second material layer to respectively form an anode electrode and a gate electrode. According to the embodiment of the invention, the heterojunction diode structure can be introduced into a part of cells in the semiconductor device structure under the condition that the cell structure and the size are not changed.
Need to check novelty before this filing date? Find Prior Art