Photovoltaic cell film layer laser patterning method, device, system, apparatus, and medium
By obtaining the correlation between the thickness of the photovoltaic cell PSG and the laser power, and using an interference sensor to adjust the laser power in real time, the problems of uniformity and efficient production of photovoltaic cell laser film opening were solved, thereby improving cell efficiency and mass production capability.
Patent Information
- Application Number
- CN202511508971.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-21
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2045-10-21
AI Technical Summary
Existing laser film-forming technology for photovoltaic cells struggles to balance uniformity and high-efficiency production, leading to reduced cell efficiency. Current adjustment methods are either costly or lack real-time feedback, and cannot adapt to changes in PSG thickness.
By obtaining the relationship between the PSG thickness of the photovoltaic cell and the laser processing power, the PSG thickness is scanned in real time using an interference sensor and the laser power is adjusted to achieve uniform laser film opening.
This technology achieves uniformity in laser patterning of photovoltaic cell films and meets the requirements for high-speed mass production, thereby improving cell efficiency and reducing contact resistance fluctuations.
Smart Images

Figure CN120962098B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of photovoltaic cell manufacturing, in particular to a photovoltaic cell film layer laser patterning method, a photovoltaic cell film layer laser patterning device, a photovoltaic cell film layer laser patterning system, an electronic device and a computer readable storage medium. BACKGROUND
[0002] The photovoltaic cell forms a phosphosilicate glass (PSG) layer through phosphorus diffusion, which is used to reduce contact resistance and passivate defects. The non-uniform PSG thickness of the photovoltaic cell (e.g., thin in the middle and thick at the edge) will cause different absorption capabilities of the laser when the film is opened, and therefore the uniformity of the PSG thickness directly affects the quality of subsequent laser patterning.
[0003] The prior art mostly uses fixed laser power, which results in a large groove depth in the position where the film is easily opened, residual or shallow groove depth in the position where the film is difficult to open, and uneven film plating, which affects the carrier collection and transmission and reduces the cell efficiency, and therefore cannot adapt to the PSG thickness variation. Although the prior art can improve the uniformity of film opening by adjusting the diffusion process (e.g., temperature, airflow), the cost is high and the cycle is long; or after the phosphorus diffusion process is completed, the PSG thickness needs to be manually detected by an ellipsometer, but the detection time is long and cannot provide real-time feedback; in addition, manual intervention to adjust the laser parameters cannot meet the demand of high-speed mass production.
[0004] Therefore, there is an urgent need for a method that can achieve uniform laser film opening while taking into account efficient production. SUMMARY
[0005] The embodiments of the present application provide a photovoltaic cell film layer laser patterning method, device, system, equipment and medium, which at least help to solve the problem that the existing photovoltaic cell laser film opening cannot take into account uniformity and efficient production.
[0006] According to some embodiments of the present application, the embodiments of the present application provide a photovoltaic cell film layer laser patterning method, which comprises: obtaining a preset patterning film opening depth of a photovoltaic cell, establishing a correspondence between the PSG thickness of the photovoltaic cell and the laser processing power required to reach the preset patterning film opening depth; using an interference sensor to scan and obtain the PSG thickness of the photovoltaic cell; and adjusting the laser processing power in real time according to the PSG thickness and the correspondence, so as to complete the uniform laser patterning of the photovoltaic cell film layer according to the preset patterning film opening depth.
[0007] In an embodiment of the present application, the use of an interference sensor to scan and obtain the PSG thickness of the photovoltaic cell comprises: collecting the interference spectrum obtained by scanning the PSG surface of the photovoltaic cell, calculating the PSG thickness through FFT phase analysis; and generating a complete thickness distribution of the photovoltaic cell film layer surface according to the PSG thickness.
[0008] In an embodiment of the present application, the interference sensor is integrated with the laser processing device, and the laser processing power is adjusted in real time according to the PSG thickness and the corresponding relationship, including: sending the PSG thickness of the current scanning position of the interference sensor to the laser processing device in real time; and adjusting the laser processing power in real time according to the PSG thickness obtained and the corresponding relationship, and completing laser processing on the scanning position of the PSG thickness obtained.
[0009] In an embodiment of the present application, the laser processing power is adjusted in real time according to the PSG thickness and the corresponding relationship, including: dividing the photovoltaic cell film layer into a plurality of sub-regions in units of the diameter of the processing laser spot; obtaining the average PSG thickness of each sub-region by scanning with the interference sensor; and adjusting the laser processing power in real time according to the average PSG thickness of each sub-region and the corresponding relationship.
[0010] In an embodiment of the present application, the photovoltaic cell film layer laser patterning method further includes: setting the positioning light path of the positioning camera coaxial with the laser processing light path, and obtaining the positioning information of the photovoltaic cell film layer in the laser patterning process through the positioning light path; matching the PSG thickness of the current laser patterning position according to the positioning information, and adjusting the corresponding laser processing power in real time according to the matched PSG thickness.
[0011] In an embodiment of the present application, the photovoltaic cell film layer laser patterning method is applied between the front-end process and the back-end process of the photovoltaic cell, the front-end process includes texturing and phosphorus diffusion on the surface of the photovoltaic cell to form a PSG layer, and the back-end process includes wet cleaning to complete the patterning and film opening.
[0012] According to some embodiments of the present application, another aspect of the embodiments of the present application further provides a photovoltaic cell film layer laser patterning device, including: a corresponding relationship establishing module, configured to obtain a preset patterning film opening depth of a photovoltaic cell, and establish a corresponding relationship between the PSG thickness of the photovoltaic cell and the laser processing power required to reach the preset patterning film opening depth; a PSG thickness obtaining module, configured to obtain the PSG thickness of the photovoltaic cell by scanning with an interference sensor; and a laser patterning module, configured to adjust the laser processing power in real time according to the PSG thickness and the corresponding relationship, so as to complete uniform laser patterning of the photovoltaic cell film layer according to the preset patterning film opening depth.
[0013] According to some embodiments of the present application, a further aspect of the embodiments of the present application further provides a photovoltaic cell film layer laser patterning system, which is used to perform the photovoltaic cell film layer laser patterning method according to any one of the above embodiments, and comprises: an interference sensor, which is used to scan and obtain a PSG thickness of a photovoltaic cell to be processed; a laser processing device, which is used to complete laser patterning of the photovoltaic cell film layer according to the PSG thickness; and a positioning camera, which is coaxially arranged with an optical path of the laser processing device, and is used to obtain positioning information of the photovoltaic cell film layer in the laser patterning process, and match a region position of the PSG thickness.
[0014] According to some embodiments of the present application, a further aspect of the embodiments of the present application further provides an electronic device, which comprises: at least one processor; and a memory connected with the at least one processor in communication; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the photovoltaic cell film layer laser patterning method according to any one of the above embodiments.
[0015] According to some embodiments of the present application, a further aspect of the embodiments of the present application further provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the photovoltaic cell film layer laser patterning method according to any one of the above embodiments.
[0016] The technical solutions provided by the embodiments of the present application have at least the following advantages:
[0017] The photovoltaic cell film layer laser patterning method provided by the embodiments of the present application obtains a PSG thickness corresponding to a laser power reaching a preset film opening depth of a photovoltaic cell, scans a PSG thickness distribution of the photovoltaic cell by using an interference sensor, and adjusts the laser power in real time according to the corresponding relationship, so that uniform laser film opening is realized while the demand for high-speed production is met. BRIEF DESCRIPTION OF DRAWINGS
[0018] One or more embodiments are exemplified by pictures in the corresponding drawings, which do not constitute a limitation on the embodiments, and the drawings in the drawings do not constitute a proportional limitation, unless specifically stated. In order to more clearly illustrate the technical solutions in the embodiments of the present application or in the prior art, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.
[0019] Figure 1 A flowchart of a photovoltaic cell film layer laser patterning method provided by the embodiments of the present application;
[0020] Figure 2 This is a schematic diagram of a laser-based photovoltaic cell opening method in the prior art;
[0021] Figure 3 This is a schematic diagram of a photovoltaic cell laser film-opening method provided in an embodiment of this application;
[0022] Figure 4 This is a schematic diagram illustrating the execution steps of a photovoltaic cell film laser patterning method provided in an embodiment of this application;
[0023] Figure 5 This is a schematic diagram of the structure of a photovoltaic cell film laser patterning device provided in an embodiment of this application;
[0024] Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;
[0025] Figure 7 This is a schematic diagram of the structure of a computer-readable storage medium provided in an embodiment of this application. Detailed Implementation
[0026] As the background technology indicates, photovoltaic cells (taking TOPCon cells as an example) first undergo phosphorus diffusion on the back polycrystalline silicon (Poly-Si) layer to form a phosphosilicate glass (PSG) layer, which is used to reduce contact resistance and passivate defects. Laser patterning technology uses green or infrared lasers to remove non-metallic areas of PSG and Poly-Si, reducing optical parasitic absorption, optimizing short-current, and improving efficiency. Figure 2 As shown, due to the uneven thickness of the phosphorus diffusion PSG on the back of the TOPCon cell, the absorption capacity of the laser varies. If the laser power used for opening the film is the same for the entire cell, the groove depth will be large in the easy-to-open areas, while there will be residue or shallow groove depth in the difficult-to-open areas.
[0027] This application provides a method for laser patterning of photovoltaic cell films. By pre-setting the desired patterning depth and then combining it with online PSG thickness detection and dynamic power adjustment, uniform laser patterning can be achieved, avoiding overheating or incomplete patterning, reducing contact resistance fluctuations, and improving cell efficiency. It is also compatible with mass production and offers advantages such as high speed and high-precision adaptive control. Similarly, it can be applied to structures requiring patterning after diffusion doping, such as patterning on the back of BC cells or the front of TOPCon cells; it can also improve the uniformity of patterning for structures with a back-side coating area due to dual-insertion.
[0028] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).
[0029] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0030] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. In addition, the character " / " in this document generally indicates that the related objects before and after it have an "or" relationship.
[0031] In the description of the embodiments of this application, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. For example, if the device or element in the illustration is inverted, then the element described as "below," "under," "below," or "bottom" of other elements or features will be oriented "above" or "top" of said other elements or features. Therefore, the term "below" may cover both above and below orientation depending on the context in which the term is used, which will be obvious to those skilled in the art. Materials may be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatial relative descriptive terms used herein may be interpreted accordingly.
[0032] In the description of embodiments of this application, the terms "about," "approximately," "roughly," or "about" for a numerical value referring to a specific parameter include the numerical value, and those skilled in the art will understand that the deviation from the numerical value is within the acceptable tolerance of the specific parameter. For example, "about" or "about" for a numerical value may include additional numerical values that are in the range of 90.0% to 110.0% of the numerical value, such as in the range of 95.0% to 105.0%, 97.5% to 102.5%, 99.0% to 101.0%, 99.5% to 100.5%, or 99.9% to 100.1%.
[0033] In the accompanying drawings corresponding to the embodiments of this application, the thickness and area of the layers are enlarged for better understanding and ease of description. Furthermore, when describing a component as "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.
[0034] In the description of the embodiments of this application, when a component "includes" another component, other components are not excluded unless otherwise stated, and other components may be further included. The formation or provision of a second component above or on a first component, or on the surface of a first component, or on one side of a first component, may include embodiments where the first and second components are in direct contact, and may also include embodiments where an additional component may be present between the first and second components, thereby preventing direct contact between the first and second components. For simplicity and clarity, various components may be drawn at different scales. In the drawings, some layers / components may be omitted for simplicity. Unless otherwise specified, the formation or provision of a second component on the surface of a first component refers to direct contact between the first and second components. The term "component" may refer to a layer, film, region, portion, structure, etc.
[0035] The terminology used in the description of the various embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used in the description of the various embodiments and the appended claims, the term "component" is also intended to include the plural form unless the context clearly indicates otherwise. Components include layers, films, regions, or plates, etc.
[0036] The embodiments of this application will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this application to facilitate a better understanding of the application. However, the technical solutions claimed in this application can be implemented even without these technical details and various variations and modifications based on the following embodiments.
[0037] like Figure 1 The image shows a method for laser patterning of a photovoltaic cell film layer provided in an embodiment of this application, including: step S1, obtaining a preset patterning depth of the photovoltaic cell and establishing a correspondence between the PSG thickness of the photovoltaic cell and the laser processing power required to reach the preset patterning depth; step S2, using an interference sensor to scan and obtain the PSG thickness of the photovoltaic cell; step S3, adjusting the laser processing power in real time according to the PSG thickness and the correspondence, so as to complete the uniform laser patterning of the photovoltaic cell film layer according to the preset patterning depth.
[0038] The photovoltaic cell film laser patterning method provided in this application obtains the correspondence between the PSG thickness at a preset opening depth of the photovoltaic cell and the laser power, scans the PSG thickness of the photovoltaic cell using an interferometer sensor, and adjusts the laser power in real time according to the correspondence, achieving uniform laser film opening while meeting the requirements of high-speed mass production. The implementation details of the photovoltaic cell film laser patterning method in this application are described below. These details are provided for ease of understanding and are not essential for implementing this solution.
[0039] In step S1, this embodiment of the application first presets the required patterned film-opening depth. Based on this preset patterned film-opening depth, it establishes a correspondence model between PSG thickness and laser processing power by measuring different PSG thicknesses and matching the corresponding laser processing power. Here, the PSG thickness can be measured by laser interferometry, ellipsometer measurement, etc., as long as accurate PSG thickness data can be obtained to establish the thickness-laser power model. This embodiment is not limited to this.
[0040] In step S2, for the photovoltaic cell requiring laser patterning, the PSG thickness of the photovoltaic cell is scanned online using a white light interferometer at a scanning speed ≥1 m / s, covering the entire cell surface (compatible with various conventional sizes such as 182 mm, 182R mm, 210 mm, and 210R mm). In one embodiment, for example, the interference spectrum obtained by scanning the PSG surface of the photovoltaic cell is acquired, and the PSG thickness at each location is calculated using FFT phase analysis, generating a complete thickness distribution on the surface of the photovoltaic cell film, which can be displayed as a thickness distribution heat map. Subsequently, the laser processing power is dynamically adjusted in real time based on this thickness distribution to achieve uniform laser patterning. This avoids the situation where the PSG thickness is manually tested with an ellipsometer after the phosphorus diffusion process is completed, but the laser processing process has already been completed, making it impossible to provide assistance for real-time optimization of the laser power.
[0041] In step S3, for example, a red / green / violet pulsed laser is used for film opening, with a pulse width adjustable from 10ps to 800ns. A reference power is set, such as 60 watts corresponding to a 30nm PSG. As the detected PSG thickness changes, the laser power is adjusted within a preset range for adaptation. Figure 3 As shown, the laser power is increased for the difficult parts of PSG thin film opening and decreased for the easy parts of PSG thick film opening, thereby achieving uniform laser patterning of photovoltaic cell film layers according to the preset patterned mold opening depth.
[0042] In one implementation, for example, an interferometer sensor is integrated with a laser processing device. The PSG thickness at the current scanning position of the interferometer sensor is sent to the laser processing device in real time. The laser processing device adjusts the laser processing power in real time based on the acquired PSG thickness and its corresponding relationship, and performs laser patterning processing on the scanned position where the PSG thickness has been acquired. In this way, by integrating the interferometer sensor with the laser processing device, laser processing is performed synchronously after the PSG thickness scan, which can further improve mold opening efficiency while ensuring the uniformity of mold opening depth.
[0043] In one embodiment, the photovoltaic cell film layer is divided into several sub-regions based on the diameter of the processing laser spot. An interferometric sensor scans and acquires the average PSG thickness of each sub-region. The laser processing power of the laser processing device is adjusted in real time based on the average PSG thickness of each sub-region. Specifically, with a processing laser spot diameter of, for example, 100 μm, a longitudinal resolution of 1 μm and a transverse planar resolution of 100 μm × 100 μm can be achieved for zone identification and power adjustment, with a scanning delay of <10 ms between each region. This enables real-time power adjustment with maximum resolution, maximizing the uniformity of photovoltaic cell film opening.
[0044] In one embodiment, for example, the positioning optical path of the positioning camera is coaxial with the laser processing optical path. The positioning optical path acquires the positioning information of the photovoltaic cell film layer during the laser patterning process. Based on the positioning information, the PSG thickness at the current laser patterning position is matched, and the corresponding laser processing power is adjusted in real time according to the matched PSG thickness. This achieves synchronization of the three optical paths of thickness detection, laser processing, and positioning, thereby ensuring the accuracy of thickness measurement and laser power adjustment.
[0045] In one implementation, such as Figure 4 As shown, before scanning to obtain the PSG thickness distribution of the photovoltaic cell, the process includes, for example, the front-end TOPCon process: texturing to phosphorus diffusion, with the back-side Poly-Si layer thickness being approximately 120nm-160nm, and the PSG layer thickness being approximately 20nm-40nm; after completing the laser patterning of the photovoltaic cell film layer, the process includes, for example, the back-end cleaning, passivation and metallization: cleaning the Poly-Si layer and PSG layer in the film opening area, alumina and silicon nitride stacked film coating, and screen printing.
[0046] Taking the PSG thickness distribution on the TOPCon production line as "thin at the center (approximately 28nm) and thick at the edges (approximately 35nm)" as an example, when using a 60W laser to open the film, there is no residue at the edges, but there is residue at the center, and the contact resistance increases by 0.5mΩ·cm. 2 This solution utilizes online white light interferometry to generate thickness distribution maps and dynamically adjusts the laser power. The center power is increased from 60 watts to 65 watts to ensure the film-opening effect, while the edge power is reduced to 57 watts to minimize laser damage. The comparison of laser patterning effects is shown below:
[0047]
[0048] In summary, the photovoltaic cell film laser patterning method proposed in this application obtains the correspondence between the PSG thickness at the preset opening depth of the photovoltaic cell and the laser power. It uses an interferometer to scan the PSG thickness of the photovoltaic cell and adjusts the laser power in real time according to the correspondence, achieving uniform laser film opening while meeting the requirements of high-speed mass production. By integrating the interferometer with the laser processing device, after scanning and obtaining the PSG thickness of the corresponding area, the laser power can be adjusted synchronously within a very short time delay to complete the laser processing of that area. Dividing the photovoltaic cell film into several sub-regions according to the laser spot size and calculating the average PSG thickness for each, and adjusting the corresponding laser processing power for the corresponding sub-regions, achieves maximum resolution power adjustment, maximizing the uniformity of photovoltaic cell film opening. A positioning optical path coaxial with the laser processing optical path is set up to obtain the positioning information of the photovoltaic cell film during the laser patterning process, thereby controlling the scanning speed of the laser processing device and the interferometer to be synchronized, ensuring the accuracy of thickness measurement and laser power adjustment.
[0049] The steps described above are for clarity only. In practice, they can be combined into one step or some steps can be split into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this application. Adding insignificant modifications or introducing insignificant designs to the algorithm or process, without changing the core design of the algorithm and process, are also within the scope of protection of this application.
[0050] Furthermore, the examples mentioned in the above embodiments can be freely combined, and any combination can be understood as an embodiment. The terms "embodiment" or "example" appearing in various locations in the specification do not necessarily refer to the same embodiment, nor are they independent or alternative embodiments mutually exclusive with other embodiments. Those skilled in the art will understand that the embodiments described herein can be combined with other embodiments.
[0051] Correspondingly, such as Figure 5 As shown, another embodiment of this application also provides a photovoltaic cell film layer laser patterning device 20, which includes, for example, a correspondence establishment module 201, a PSG thickness acquisition module 202, and a laser patterning module 203. The correspondence establishment module 201 is used to acquire a preset patterning depth of the photovoltaic cell and establish a correspondence between the PSG thickness of the photovoltaic cell and the laser processing power required to reach the preset patterning depth. The PSG thickness acquisition module 202 is used to acquire the PSG thickness of the photovoltaic cell using an interference sensor. The laser patterning module 203 is used to adjust the laser processing power in real time according to the PSG thickness and the correspondence to complete the uniform laser patterning of the photovoltaic cell film layer according to the preset patterning depth.
[0052] It is not difficult to see that this embodiment is a device embodiment corresponding to the above method embodiments, and this embodiment can be implemented in conjunction with the above method embodiments. The relevant technical details mentioned in the above method embodiments are still valid in this embodiment, and will not be repeated here to reduce repetition. Accordingly, the relevant technical details mentioned in this embodiment can also be applied to the above method embodiments.
[0053] It is worth mentioning that all modules involved in this embodiment are logical modules. In practical applications, a logical unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. Furthermore, to highlight the innovative aspects of this application, this embodiment does not introduce units that are not closely related to solving the technical problems proposed in this application; however, this does not mean that other units are absent in this embodiment.
[0054] Another embodiment of this application provides a photovoltaic cell film layer laser patterning system, including: an interferometer sensor, a laser processing device, and a positioning camera. The interferometer sensor is used to scan and acquire the PSG thickness of the photovoltaic cell to be processed; the laser processing device is used to complete the laser patterning of the photovoltaic cell film layer based on the PSG thickness; the positioning camera is coaxially arranged with the optical path of the laser processing device, and is used to acquire the positioning information of the photovoltaic cell film layer during the laser patterning process, matching the position of the area where the PSG thickness is scanned.
[0055] Similarly, this embodiment is a hardware system embodiment corresponding to the above method embodiments, and this embodiment can be implemented in conjunction with the above method embodiments. The relevant technical details mentioned in the above method embodiments remain valid in this embodiment, and will not be repeated here to reduce repetition. Accordingly, the relevant technical details mentioned in this embodiment can also be applied to the above method embodiments.
[0056] like Figure 6 As shown, another embodiment of this application relates to an electronic device 30, including at least one processor 31; and a memory 32 communicatively connected to at least one processor 31; wherein the memory 32 stores instructions executable by at least one processor 31, the instructions being executed by at least one processor 31 to enable at least one processor 31 to perform the photovoltaic cell film laser patterning method as described above.
[0057] The memory 32 and processor 31 are connected via a bus, which can include any number of interconnecting buses and bridges, connecting various circuits of one or more processors and the memory. The bus can also connect various other circuits, such as peripheral devices, voltage regulators, and power management circuits, which are well known in the art and therefore will not be described further herein. A bus interface provides an interface between the bus and the transceiver. The transceiver can be a single element or multiple elements, such as multiple receivers and transmitters, providing a unit for communicating with various other devices over a transmission medium. Data processed by the processor is transmitted over the wireless medium via an antenna, which further receives data and transmits it to the processor 31.
[0058] Processor 31 is responsible for managing the bus and general processing, and can also provide various functions, including timing, peripheral interfaces, voltage regulation, power management, and other control functions. Memory 32 can be used to store data used by processor 31 during operation.
[0059] like Figure 7 As shown, another embodiment of this application relates to a computer-readable storage medium 40 storing a computer program. When the computer program is executed by a processor, it implements the above-described method embodiments.
[0060] That is, those skilled in the art will understand that all or part of the steps in the methods of the above embodiments can be implemented by a program instructing related hardware. This program is stored in a storage medium and includes several instructions to cause a device (which may be a microcontroller, chip, etc.) or processor to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as a USB flash drive, a portable hard drive, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.
[0061] Those skilled in the art will understand that the above embodiments are specific embodiments for implementing this application, and in practical applications, various changes can be made to them in form and detail without departing from the spirit and scope of this application.
Claims
1. A method for laser patterning of photovoltaic cell film layers, characterized in that, include: Obtain the preset patterned film-opening depth of the photovoltaic cell, and establish the correspondence between the PSG thickness of the photovoltaic cell and the laser processing power required to reach the preset patterned film-opening depth; The PSG thickness of the photovoltaic cell was obtained by scanning using an interferometer sensor; The laser processing power is adjusted in real time according to the PSG thickness and the corresponding relationship, so as to complete the uniform laser patterning of the photovoltaic cell film layer according to the preset patterning mold opening depth; The step of using an interferometric sensor to scan and obtain the PSG thickness of the photovoltaic cell includes: Interference spectra obtained by scanning the PSG surface of the photovoltaic cell are collected, and the PSG thickness is calculated by FFT phase analysis; The complete thickness distribution of the photovoltaic cell film surface is generated based on the PSG thickness; The step of adjusting the laser processing power in real time according to the PSG thickness and the corresponding relationship includes: The photovoltaic cell film layer is divided into several sub-regions based on the diameter of the processing laser spot; The average PSG thickness of each sub-region is obtained by scanning with the interference sensor; The laser processing power is adjusted in real time based on the average PSG thickness of each sub-region and the corresponding relationship.
2. The method for laser patterning of photovoltaic cell film layers according to claim 1, characterized in that, The interference sensor is integrated with the laser processing device, and the real-time adjustment of the laser processing power based on the PSG thickness and the corresponding relationship includes: The PSG thickness at the current scanning position of the interference sensor is sent to the laser processing device in real time; The laser processing device adjusts the laser processing power in real time according to the obtained PSG thickness and the corresponding relationship, and completes laser processing at the scanning position where the obtained PSG thickness has been obtained.
3. The method for laser patterning of photovoltaic cell film layers according to claim 1, characterized in that, Also includes: The positioning optical path of the positioning camera is set to be coaxial with the laser processing optical path, and the positioning information of the photovoltaic cell film layer during the laser patterning process is obtained through the positioning optical path; The PSG thickness at the current laser patterning position is matched based on the positioning information, and the corresponding laser processing power is adjusted in real time based on the matched PSG thickness.
4. The method for laser patterning of photovoltaic cell film layers according to any one of claims 1-3, characterized in that, This technology is applied between the front-end and back-end processes of photovoltaic cells. The front-end process includes texturing and phosphorus diffusion on the photovoltaic cell surface to form a PSG layer, and the back-end process includes wet cleaning to complete patterned film opening.
5. A laser patterning device for photovoltaic cell film layers, characterized in that, include: The correspondence establishment module is used to obtain the preset patterned film opening depth of the photovoltaic cell and establish the correspondence between the PSG thickness of the photovoltaic cell and the laser processing power required to reach the preset patterned film opening depth. The PSG thickness acquisition module is used to acquire the PSG thickness of the photovoltaic cell by scanning with an interference sensor. The laser patterning module is used to adjust the laser processing power in real time according to the PSG thickness and the corresponding relationship, so as to complete the uniform laser patterning of the photovoltaic cell film layer according to the preset patterning mold opening depth; The step of using an interferometric sensor to scan and obtain the PSG thickness of the photovoltaic cell includes: Interference spectra obtained by scanning the PSG surface of the photovoltaic cell are collected, and the PSG thickness is calculated by FFT phase analysis; The complete thickness distribution of the photovoltaic cell film surface is generated based on the PSG thickness; The step of adjusting the laser processing power in real time according to the PSG thickness and the corresponding relationship includes: The photovoltaic cell film layer is divided into several sub-regions based on the diameter of the processing laser spot; The average PSG thickness of each sub-region is obtained by scanning with the interference sensor; The laser processing power is adjusted in real time based on the average PSG thickness of each sub-region and the corresponding relationship.
6. A laser patterning system for photovoltaic cell film layers, characterized in that, The system is used to perform the photovoltaic cell film laser patterning method as described in any one of claims 1-4, including: Interference sensor, used to scan and obtain the PSG thickness of the photovoltaic cell to be processed; A laser processing apparatus is used to complete the laser patterning of the photovoltaic cell film layer according to the PSG thickness; A positioning camera is coaxially arranged with the optical path of the laser processing device to acquire the positioning information of the photovoltaic cell film layer during the laser patterning process and match it with the location of the area where the PSG thickness is scanned.
7. An electronic device, characterized in that, include: At least one processor; as well as, A memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the photovoltaic cell film laser patterning method as described in any one of claims 1 to 4.
8. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the photovoltaic cell film laser patterning method according to any one of claims 1 to 4.
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