Ink and light emitting device

Abstract

The invention relates to ink and a light emitting device. The ink comprises an induction material, a surfactant and a solvent, wherein the induction material comprises disc-shaped organic semiconductor molecules. The induction material which is relatively strong in rigidity and relatively difficult to dissolve is dissolved in the solvent by utilizing the surfactant, and the induction layer can be formed by adopting a solution method when the light-emitting device is prepared. The guiding effect of the induction material is utilized to enable the luminescent layer material to grow along a specific direction to form a highly ordered luminescent layer film, so that high crystallinity and high fluorescence quantum efficiency of the luminescent layer material are realized, and the electroluminescent efficiency and brightness of the C-OLED are improved.

Description

Technical Field

[0001] This application relates to the field of light-emitting devices, and in particular to an ink and a light-emitting device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are a new type of optoelectronic device based on organic semiconductor materials, possessing advantages such as self-illumination, low power consumption, high contrast, wide viewing angle, and fast response speed. The development history of OLEDs can be divided into three stages: the first generation is based on traditional fluorescent materials, whose efficiency is limited by spin statistics, utilizing only 25% of singlet excitons; the second generation is based on blue phosphorescent OLEDs using heavy metal complexes, which can utilize 100% of triplet excitons, but the stability of blue phosphorescent materials is poor; the third generation is based on novel fluorescent materials, which can achieve the conversion of triplet excitons to singlet excitons through different mechanisms, improving efficiency and stability.

[0003] However, the performance of OLEDs is still constrained by several factors, one of which is the crystallinity of organic semiconductor materials. Crystalline organic semiconductor materials possess high carrier mobility and fluorescence quantum efficiency, which can improve the electroluminescence efficiency and brightness of OLEDs. In recent years, a new type of OLED device has emerged: crystalline organic light-emitting diodes (C-OLEDs). C-OLEDs utilize crystalline organic semiconductor materials as the light-emitting layer. The high crystallinity and high fluorescence quantum efficiency of the light-emitting layer can improve the electroluminescence efficiency and brightness of C-OLEDs. Furthermore, due to the good thermal stability and oxidation resistance of crystalline organic semiconductor materials, the stability and lifespan of C-OLEDs can be improved. However, current C-OLED fabrication methods still have some shortcomings, such as the need for special equipment or processes to achieve the crystallization of crystalline organic semiconductor materials or control their orientation, making the process difficult. Summary of the Invention

[0004] Based on this, this application provides an ink that can be used in light-emitting devices to form an induction layer using a solution method. By utilizing the guiding effect of the induction layer, the light-emitting layer material can be grown in a specific direction to form a highly ordered light-emitting layer film.

[0005] In addition, this application also provides a light-emitting device.

[0006] An ink comprising an inducing material, a surfactant, and a solvent, wherein the inducing material comprises disk-shaped organic semiconductor molecules.

[0007] In some embodiments, the inducing material includes one or more of disk-shaped liquid crystal materials, disk-shaped polycrystalline materials, and disk-shaped single crystal materials;

[0008] Optionally, the inducing material includes one or more of the following: benzo[a]phenanthrene compounds, hexabenzo[a]methyl compounds, porphyrin compounds, phthalocyanine compounds, fused thiophene compounds, fluorene compounds, fluorenone compounds, and carbazole compounds;

[0009] And / or, the surfactant includes one or more of fluorocarbon surfactants and hydrocarbon surfactants.

[0010] In some embodiments, the inducing material includes one or more of 2,3,6,7,10,11-hexa(hexyloxy)benzophenanthrene, 2,3,6,7,10,11-hexa(n-octyloxo)benzophenanthrene, and 3,6,10,11-tetra(pentoxy)triphenyl-2,7-dimethylbis(2,2-dimethylpropionate);

[0011] And / or, the fluorocarbon surfactant includes one or more of fluoroalkyl sulfonates and fluoroalkyl sulfonamides; optionally, the fluorocarbon surfactant includes one or more of potassium perfluorooctyl sulfonate, perfluorooctyl sulfonate amine, and N-ethyl perfluorooctyl sulfonamide.

[0012] And / or, the hydrocarbon surfactant includes one or more of alkyl sulfonates and alkyl sulfates; optionally, the hydrocarbon surfactant includes one or more of sodium decaalkyl sulfate and sodium dodecyl sulfonate.

[0013] In some embodiments, the mass ratio of the inducing material to the surfactant is 9:1 to 6:4.

[0014] In some embodiments, the mass ratio of the inducing material to the surfactant is 9:1 to 8:2.

[0015] In some embodiments, the solvent includes one or more of methyl benzoate, toluene, xylene, chlorobenzene, chloroform, tetrahydrofuran, acetonitrile, dichloromethane, tetrahydronaphthalene, and cyclohexylbenzene; and / or,

[0016] In the ink, the concentration of the inducing material is 0.5 mg / mL to 5 mg / mL.

[0017] A light-emitting device includes a first electrode, an inducing layer, a light-emitting layer, and a second electrode stacked sequentially.

[0018] The material of the induction layer includes an induction material and a surfactant, wherein the induction material includes disk-shaped organic semiconductor molecules.

[0019] In some embodiments, the thickness of the inducing layer is 10 nm to 30 nm.

[0020] In some embodiments, the inducing material includes one or more of disk-shaped liquid crystal materials, disk-shaped polycrystalline materials, and disk-shaped single-crystal materials.

[0021] In some embodiments, the inducing material includes one or more of the following: benzo[a]phenanthrene compounds, hexabenzo[a]methyl compounds, porphyrin compounds, phthalocyanine compounds, fused thiophene compounds, fluorene compounds, fluorenone compounds, and carbazole compounds.

[0022] In some embodiments, the inducing material includes one or more of 2,3,6,7,10,11-hexa(hexyloxy)benzophenanthrene, 2,3,6,7,10,11-hexa(n-octyloxo)benzophenanthrene, and 3,6,10,11-tetra(pentoxy)triphenyl-2,7-dimethylbis(2,2-dimethylpropionate).

[0023] In some embodiments, the surfactant includes one or more of fluorocarbon surfactants and hydrocarbon surfactants.

[0024] In some embodiments, the fluorocarbon surfactant includes one or more of fluoroalkyl sulfonates and fluoroalkyl sulfonamides.

[0025] In some embodiments, the fluorocarbon surfactant includes one or more of potassium perfluorooctyl sulfonate, perfluorooctyl sulfonate amine, and N-ethyl perfluorooctyl sulfonamide.

[0026] In some embodiments, the hydrocarbon surfactant includes one or more of alkyl sulfonates and alkyl sulfates.

[0027] In some embodiments, the hydrocarbon surfactant includes one or more of sodium decaalkyl sulfate and sodium dodecyl sulfonate.

[0028] In some embodiments, the light-emitting layer is a crystalline thin film.

[0029] In some embodiments, the material of the light-emitting layer includes a thermal exciton material.

[0030] In some embodiments, the thermal exciton material has the general structural formula DLA, where D is the donor, A is the acceptor, and L is one of a single bond, phenylene, naphthylene, anthracene, and pyrene.

[0031] In some embodiments, D has one of the following structural formulas: ; A has one of the following structural formulas: R1 is a single bond or a phenylene group, R2 is hydrogen, cyano, halogen or C1~C6 alkyl, and n is an integer from 1 to 5.

[0032] In some embodiments, the thermal exciton material is selected from one or more of the following compounds:

[0033] , , , , , , , , , , , , and .

[0034] In some embodiments, the anode, hole injection layer, induction layer, light-emitting layer, electron transport layer, electron injection layer and cathode are stacked sequentially.

[0035] In some embodiments, the light-emitting device satisfies one or more of the following conditions:

[0036] (1) The materials of the anode and / or the cathode include one or more of metals, carbon materials and metal oxides, wherein the metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene and carbon fibers; the metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or include a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, wherein the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2;

[0037] (2) The material of the hole injection layer includes one or more of the following: TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60.

[0038] (3) The materials of the electron transport layer and / or the electron injection layer include inorganic materials and / or organic materials, wherein the inorganic materials are selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin sulfide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, Li, LiF, NaF and CsF, and the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, and the organic materials are selected from one or more of the following: quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds and hydroxyquinoline compounds.

[0039] A method for fabricating a light-emitting device includes the following steps:

[0040] An induction layer is prepared by forming an ink film on the anode surface, wherein the ink is as described above;

[0041] A crystalline light-emitting layer and a cathode are formed on the surface of the inducing layer to fabricate a light-emitting device.

[0042] Such as the application of light-emitting devices in the fabrication of optoelectronic devices.

[0043] An optoelectronic device includes the light-emitting device described above.

[0044] The aforementioned ink comprises an inducing material, a surfactant, and a solvent. The surfactant dissolves the rigid and difficult-to-dissolve inducing material in the solvent, enabling the formation of the inducing layer using a solution method during the fabrication of light-emitting devices. Utilizing the guiding effect of the inducing material, crystalline organic semiconductor materials are grown along a specific direction, forming a highly ordered light-emitting layer film. This achieves high crystallinity and high fluorescence quantum efficiency of the crystalline organic semiconductor material, improving the electroluminescence efficiency and brightness of C-OLEDs, while simultaneously reducing the complexity of the light-emitting device fabrication process. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1 This is a schematic diagram of the structure of a light-emitting device in some embodiments of this application;

[0047] Figure 2The current efficiency comparison curves are shown for some embodiments and comparative examples of the crystalline organic light-emitting devices prepared in this application.

[0048] Explanation of reference numerals in the attached figures:

[0049] The light-emitting device 100, anode 110, hole injection layer 120, induction layer 130, light-emitting layer 140, electron transport layer 150, electron injection layer 160, and cathode 170 are included. Detailed Implementation

[0050] To facilitate understanding of this application, a more comprehensive description of the application will be provided below in conjunction with specific embodiments. Preferred embodiments of the application are given in the specific embodiments. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0051] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0052] Unless otherwise stated or in case of conflict, the terms or phrases used in this application shall have the following meanings:

[0053] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" and "second" may explicitly or implicitly include at least one of those features.

[0054] In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.

[0055] In this application, "one or more" refers to any one, any two, or any two or more of the listed items. "Several" refers to any two or more.

[0056] Unless otherwise specified, all percentage concentrations mentioned in this application refer to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of that component.

[0057] The terms "optionally" and similar expressions used in this application refer to embodiments of this application that may provide certain beneficial effects under certain circumstances. However, other embodiments may also be optional in the same or other circumstances. Furthermore, the description of one or more optional embodiments does not imply that other embodiments are unavailable, nor is it intended to exclude other embodiments from the scope of this application.

[0058] When a numerical range is disclosed in this application, the range is considered continuous and includes the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to an integer, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed in this application should be understood to include any and all subranges to which they are included.

[0059] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0060] The terms "comprising" and "having," and any variations thereof, used in the embodiments of this application, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or components inherent to such processes, methods, products, or devices.

[0061] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0062] A first aspect of this application provides an ink comprising an inducing material, a surfactant, and a solvent, wherein the inducing material comprises a disk-shaped organic semiconductor molecule.

[0063] Disk-shaped organic semiconductor materials exhibit a disk-like or disc-like molecular structure, typically possessing a large conjugated system and delocalized electrons, thus exhibiting excellent electrical and photoelectric properties. The molecular structure of disk-shaped organic semiconductor materials usually consists of a planar or near-planar aromatic molecular core, surrounded by multiple aromatic rings or heterocycles linked by π-conjugated bonds. Multiple arm-like structures may also be attached around the periphery; these arm-like structures can be straight chains or branched chains, typically containing carbon chains, aromatic rings, or other conjugated units.

[0064] In some embodiments, the inducing material includes one or more of disk-shaped liquid crystal materials, disk-shaped polycrystalline materials, and disk-shaped single crystal materials.

[0065] In some embodiments, the inducing material includes one or more of the following: benzo[a]phenanthrene compounds, hexabenzo[a]methyl compounds, porphyrin compounds, phthalocyanine compounds, fused thiophene compounds, fluorene compounds, fluorenone compounds, and carbazole compounds.

[0066] In some embodiments, the inducing material includes one or more of 2,3,6,7,10,11-hexa(hexyloxy)benzo[a]phenanthrene (CAS No.: 70351-86-9), 2,3,6,7,10,11-hexa(n-octyloxo)benzo[a]phenanthrene (CAS No.: 70351-87-0), and 3,6,10,11-tetra(pentoxy)triphenyl-2,7-dimethylbis(2,2-dimethylpropionate) (T5DP-2,7).

[0067] In some embodiments, surfactants include one or more of fluorocarbon surfactants and hydrocarbon surfactants. One end (polar portion) of a surfactant molecule is hydrophilic, called the hydrophilic group, and the other end (non-polar portion) is lipophilic, called the lipophilic or hydrophobic group. If the hydrophobic group of a surfactant is a hydrocarbon group, it is called a hydrocarbon surfactant. Fluorocarbon surfactants are hydrocarbon surfactants in which all or part of the hydrogen atoms in the hydrocarbon chain are replaced by fluorine atoms; that is, the fluorocarbon chain replaces the hydrocarbon chain. They are also called fluorocarbon surfactants.

[0068] Specifically, fluorocarbon surfactants include one or more of fluoroalkyl sulfonates and fluoroalkyl sulfonamides. Further, fluorocarbon surfactants include one or more of potassium perfluorooctyl sulfonate, perfluorooctyl sulfonate amine, and N-ethylperfluorooctyl sulfophthalamide.

[0069] Specifically, hydrocarbon surfactants include one or more of alkyl sulfonates and alkyl sulfates. Further, hydrocarbon surfactants include one or more of sodium decaalkyl sulfate and sodium dodecyl sulfonate.

[0070] In some embodiments, the mass ratio of the inducing material to the surfactant is 9:1 to 6:4. For example, the mass ratio of the inducing material to the surfactant may be, but is not limited to, 9:1, 8.5:1, 8:2, 7.5:2.5, 7:3, 6.5:3.5, 6:4, or any range of two of these values. Optionally, the mass ratio of the inducing material to the surfactant is 9:1 to 8:2.

[0071] In some embodiments, the solvent includes one or more of methyl benzoate, toluene, xylene, chlorobenzene, chloroform, tetrahydrofuran, acetonitrile, dichloromethane, tetrahydronaphthalene, and cyclohexylbenzene.

[0072] In some embodiments, the concentration of the inducing material in the ink is 0.5 mg / mL to 5 mg / mL. For example, the concentration of the inducing material in the ink may be, but is not limited to, 0.5 mg / mL, 1 mg / mL, 1.5 mg / mL, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL, 5 mg / mL, or any range of two of these values.

[0073] The aforementioned ink comprises an inducing material, a surfactant, and a solvent. The surfactant dissolves the rigid, difficult-to-dissolve inducing material in the solvent, enabling the formation of the inducing layer using a solution method during the fabrication of light-emitting devices. Utilizing the guiding effect of the inducing material, crystalline organic semiconductor materials are grown along a specific direction, forming a highly ordered light-emitting layer film. This achieves high crystallinity and high fluorescence quantum efficiency of the crystalline organic semiconductor material, thereby improving the electroluminescence efficiency and brightness of C-OLEDs.

[0074] Furthermore, by using the aforementioned ink to form an induction layer, the guiding effect of the induction layer can also improve the uniformity of the formed light-emitting layer, thereby further improving the stability and lifespan of the OLED.

[0075] A second aspect of this application provides a light-emitting device, comprising: a first electrode, an inducing layer, a light-emitting layer, and a second electrode disposed in sequence.

[0076] The material of the induction layer includes an induction material and a surfactant, wherein the induction material includes disk-shaped organic semiconductor molecules.

[0077] The specific inducing materials and surfactants have been described previously and will not be repeated here. The aforementioned light-emitting device includes an inducing layer. By utilizing the guiding effect of the inducing layer, the light-emitting layer material is grown along a specific direction to form a highly ordered light-emitting layer film, thereby achieving high crystallinity and high fluorescence quantum efficiency of the crystalline organic semiconductor material, and improving the electroluminescence efficiency and brightness of C-OLED.

[0078] In some embodiments, the thickness of the inducing layer is 10 nm to 30 nm. For example, the thickness of the inducing layer may be, but is not limited to, 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, 22 nm, 25 nm, 26 nm, 28 nm, 30 nm, or any combination of these values.

[0079] In some embodiments, the light-emitting layer is a crystalline thin film.

[0080] In some embodiments, the material of the light-emitting layer includes a thermal exciton material. Specifically, the thermal exciton material has the general structural formula DLA, where D is the donor, A is the acceptor, and L is one of a single bond, phenylene, naphthylene, anthracene, and pyrene.

[0081] In some embodiments, D has one of the following structural formulas: ; A has one of the following structural formulas: R1 is a single bond or a phenylene group, R2 is hydrogen, cyano, halogen, or a C1-C6 alkyl group, and n is an integer from 1 to 5. L is a single bond or has one of the following structures: .

[0082] In some embodiments, the thermal exciton material is selected from one or more of the following compounds:

[0083] , , , , , , , , , , , , and .

[0084] By optimizing the material of the light-emitting layer, crystalline organic light-emitting devices with different colors and wavelengths can also be obtained.

[0085] In some embodiments, the thickness of the light-emitting layer is 30 nm to 40 nm.

[0086] In some embodiments, the materials of the anode and / or the cathode include one or more of metals, carbon materials, and metal oxides. The metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or composite electrodes consisting of metal sandwiched between doped or undoped transparent metal oxides. The composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0087] In some embodiments, the cathode material includes one or more of Ag and Al.

[0088] In some embodiments, the anode material includes one of conductive glass, a transparent polymer, and a metal. Specifically, the conductive glass may be, but is not limited to, indium tin oxide (ITO) conductive glass. Specifically, the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg.

[0089] In some embodiments, the light-emitting device further includes one or two of a hole injection layer and a hole transport layer disposed between the anode and the induction layer, and one or two of an electron transport layer and an electron injection layer disposed between the light-emitting layer and the cathode.

[0090] In some of these embodiments, please refer to Figure 1 The light-emitting device 100 includes an anode 110, a hole injection layer 120, an induction layer 130, a light-emitting layer 140, an electron transport layer 150, an electron injection layer 160, and a cathode 170, which are stacked in sequence.

[0091] In some embodiments, the hole injection layer material includes one or more of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60.

[0092] In some embodiments, the materials of the electron transport layer and / or the electron injection layer include inorganic and / or organic materials, wherein the inorganic materials are selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin sulfide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, Li, LiF, NaF, and CsF; the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and the organic materials are selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0093] Specifically, the materials for the electron transport layer include one or more of the following: aluminum 8-hydroxyquinoline (Alq3), diphenyl[4-(triphenylsilyl)phenyl]oxyphosphine (TSPO1), 1,3,5-tris(3-pyridyl-3-phenyl)benzene (TmPyPB), 2-(4-biphenyl)-5-phenyloxadiazole (PBD), octahydroxyquinoline beryllium (Beq2), 1,2,4-triazole derivative (TAZ), 2,7-bis(diphenylphospho)-9,9'-spirodifluorene (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI), 4,6-bis(3,5-di(3-pyridyl)phenyl)-2-methylpyrimidine (B3PYMPM), and 4,7-diphenyl-1,10-phenanthroline (BPhen).

[0094] In some embodiments, the material of the electron injection layer includes one or more of Li, LiF, NaF, and CeF3.

[0095] It is understood that in this application, the thickness of each functional layer, such as the electron injection layer, the electron transport layer, and the electron injection layer, can be what is commonly used in the art, and is not particularly limited here.

[0096] A third aspect of this application provides a method for fabricating a light-emitting device, comprising the following steps:

[0097] An induction layer is prepared by forming an ink film on the anode surface, and the ink is as described above;

[0098] A crystalline light-emitting layer and a cathode are formed on the surface of the inducing layer to fabricate a light-emitting device.

[0099] By using surfactants to dissolve rigid, difficult-to-dissolve inducing materials in solvents, an inducing layer can be formed using a solution method. Utilizing the guiding effect of the inducing material, crystalline organic semiconductor materials are grown along specific directions to form a highly ordered light-emitting layer film. This achieves high crystallinity and high fluorescence quantum efficiency of the crystalline organic semiconductor material, thereby improving the electroluminescence efficiency and brightness of crystalline organic light-emitting devices. The above preparation method features low cost, simple operation, and strong controllability. It can achieve the preparation of crystalline light-emitting layers with high crystallinity and high fluorescence quantum efficiency, thus improving the electroluminescence efficiency and brightness of crystalline organic light-emitting devices. It can also realize the fabrication of C-OLEDs on large-area or flexible substrates.

[0100] Meanwhile, the above method can also realize the fabrication of crystalline organic light-emitting devices of different colors and wavelengths, providing a simple, efficient, low-cost, and scalable method for fabricating crystalline organic light-emitting devices that is difficult to fabricate. It can be widely used in high-end displays and lighting fields and has high application value.

[0101] It is understood that the step of forming an ink film on the anode surface can be a common practice in the art, such as spin-coating the ink onto the anode surface and then drying it to form a film.

[0102] In some embodiments, a crystalline light-emitting layer is formed on the surface of the inducing layer using a solution method. The solution method for forming the light-emitting layer has advantages such as low preparation cost, simple process, and strong controllability, which is beneficial for industrial production.

[0103] In some embodiments, the light-emitting device further includes one or two of a hole injection layer and a hole transport layer disposed between the anode and the induction layer, and one or two of an electron transport layer and an electron injection layer disposed between the light-emitting layer and the cathode.

[0104] In some embodiments, the method for fabricating the light-emitting device further includes:

[0105] A hole injection layer is formed on the anode surface, and an induction layer is formed on the side of the hole injection layer away from the anode.

[0106] An electron transport layer and an electron injection layer are formed on the side of the light-emitting layer away from the anode, and the cathode is formed on the surface of the electron injection layer away from the anode.

[0107] The specific methods for forming each layer can be those commonly used in the field, such as using a solution method to form the hole injection layer, or using a vapor deposition method to form the electron transport layer, electron injection layer, and cathode.

[0108] The fourth aspect of this application provides an application of the above-described light-emitting device in the fabrication of an optoelectronic device.

[0109] The fifth aspect of this application provides an optoelectronic device, including the light-emitting device described above.

[0110] In some embodiments, the optoelectronic device includes a display device or a solid-state lighting device.

[0111] To make the objectives and advantages of this application clearer, the following detailed description of the crystalline organic light-emitting device and its effects, in conjunction with specific embodiments, is provided. It should be understood that the specific embodiments described herein are merely illustrative and should not be construed as limiting the scope of this application. Unless otherwise specified, the following embodiments do not include components other than unavoidable impurities. Unless otherwise specified, the drugs and instruments used in the embodiments are conventional choices in the art. Experimental methods not specifying specific conditions in the embodiments are implemented under conventional conditions, such as those described in literature, books, or methods recommended by the manufacturer.

[0112] Example 1

[0113] This embodiment provides a crystalline OLED device, the fabrication process of which is as follows:

[0114] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0115] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0116] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 90:10, and the thickness of the resulting induction layer was 25 nm.

[0117] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0118] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0119] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0120] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0121] Example 2

[0122] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the mass ratio of the inducing material to the surfactant in the inducing layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0123] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0124] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0125] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 80:20, and the thickness of the resulting induction layer was 25 nm.

[0126] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0127] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0128] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0129] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0130] Example 3

[0131] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the mass ratio of the inducing material to the surfactant in the inducing layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0132] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0133] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0134] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 70:30, and the thickness of the resulting induction layer was 25 nm.

[0135] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0136] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0137] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0138] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0139] Example 4

[0140] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the mass ratio of the inducing material to the surfactant in the inducing layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0141] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0142] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0143] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 60:40, and the thickness of the resulting induction layer was 25 nm.

[0144] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0145] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0146] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0147] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0148] Example 5

[0149] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the surfactant in the induction layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0150] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0151] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0152] (3) The induction material T5DP-2,7 and the hydrocarbon surfactant sodium decaalkyl sulfate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the hydrocarbon surfactant was 90:10, and the thickness of the resulting induction layer was 25 nm.

[0153] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0154] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0155] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0156] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0157] Example 6

[0158] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 5, except that the mass ratio of the inducing material to the surfactant in the inducing layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0159] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0160] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0161] (3) The induction material T5DP-2,7 and the hydrocarbon surfactant sodium decaalkyl sulfate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the hydrocarbon surfactant was 80:20, and the thickness of the resulting induction layer was 25 nm.

[0162] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0163] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0164] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0165] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0166] Example 7

[0167] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 5, except that the mass ratio of the inducing material to the surfactant in the inducing layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0168] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0169] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0170] (3) The induction material T5DP-2,7 and the hydrocarbon surfactant sodium decaalkyl sulfate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the hydrocarbon surfactant was 70:30, and the thickness of the resulting induction layer was 25 nm.

[0171] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0172] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0173] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0174] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0175] Example 8

[0176] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 5, except that the mass ratio of the inducing material to the surfactant in the inducing layer is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0177] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0178] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0179] (3) The induction material T5DP-2,7 and hydrocarbon surfactant sodium decaalkyl sulfate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the hydrocarbon surfactant was 60:40, and the thickness of the resulting induction layer was 25 nm.

[0180] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0181] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0182] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0183] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0184] Example 9

[0185] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the inducing material is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0186] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0187] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0188] (3) The induction material 2,3,6,7,10,11-hexa(hexyloxy)benzophenanthrene and the fluorocarbon surfactant perfluoron-octylsulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 90:10, and the thickness of the obtained induction layer was 25 nm.

[0189] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0190] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0191] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0192] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0193] Example 10

[0194] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the inducing material is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0195] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0196] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0197] (3) The induction material 2,3,6,7,10,11-hexa(n-octyloxo)benzophenanthrene and the fluorocarbon surfactant perfluoron-octylsulfonate amine were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 90:10, and the thickness of the obtained induction layer was 25 nm.

[0198] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0199] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0200] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0201] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0202] Example 11

[0203] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the light-emitting layer material is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0204] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0205] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0206] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 90:10, and the thickness of the resulting induction layer was 25 nm.

[0207] (4) PABPP was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0208] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0209] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0210] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0211] Example 12

[0212] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the light-emitting layer material is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0213] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0214] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0215] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 90:10, and the thickness of the resulting induction layer was 25 nm.

[0216] (4) PATPA was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0217] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0218] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0219] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0220] Example 13

[0221] This embodiment provides a crystalline OLED device, similar to the crystalline OLED device in Embodiment 1, except that the light-emitting layer material is different. The fabrication process of the crystalline OLED device in this embodiment is as follows:

[0222] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0223] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0224] (3) The induction material T5DP-2,7 and the fluorocarbon surfactant perfluorooctyl sulfonate were deposited on the hole injection layer by solution method as the induction layer. The mass ratio of the induction material to the fluorocarbon surfactant was 90:10, and the thickness of the resulting induction layer was 25 nm.

[0225] (4) mPAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0226] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0227] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0228] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0229] Comparative Example 1

[0230] Comparative Example 1 provides a crystalline OLED device, similar to the crystalline OLED device of Example 1, except that the inducing layer does not contain a surfactant. The fabrication process of the crystalline OLED device of Comparative Example 1 is as follows:

[0231] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0232] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0233] (3) The hole injection layer is deposited using a solution method to form an induction material T5DP-2,7 as an induction layer with a target thickness of 25 nm.

[0234] (4) PAC was deposited on the induction layer as a light-emitting layer using a solution method, with a thickness of 35 nm.

[0235] (5) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0236] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0237] (7) Al was deposited on the electron injection layer as a cathode by vapor deposition, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0238] Comparative Example 2

[0239] Comparative Example 2 provides a crystalline OLED device, similar to the crystalline OLED device of Example 1, except that it does not contain an inducing layer. The fabrication process of the crystalline OLED device of Comparative Example 2 is as follows:

[0240] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0241] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0242] (3) PAC was deposited on the hole injection layer as a light-emitting layer using a solution method with a thickness of 35 nm.

[0243] (4) TmPyPB was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0244] (5) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 1 nm.

[0245] (6) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain a crystalline OLED device.

[0246] The performance data of the crystalline OLED devices prepared in the above embodiments and comparative examples are shown in Table 1 below. Wherein, V@10mA / cm 2 This indicates a current density of 10 mA / cm². 2 The corresponding driving voltage at that time; EQE@10mA / cm 2 This indicates a current density of 10 mA / cm². 2 The corresponding EQE; T 95 (h)@1000cd / m 2 This indicates that the device has an initial brightness of 1000 cd / m². 2 The light continues to illuminate until the brightness decreases to 95% of the initial brightness (950 cd / m²). 2 The time elapsed during ( ).

[0247] Table 1 Performance data of crystalline OLED devices in each embodiment and comparative example

[0248]

[0249] In the crystalline OLED devices of Examples 1-4 and Examples 9-13 above, the induction layer is a mixture of an induction material and a fluorocarbon surfactant. In the crystalline OLED devices of Examples 5-8, the induction layer is a mixture of an induction material and a hydrocarbon surfactant. Comparative Example 1 is a conventional crystalline OLED device in which the induction layer does not contain a surfactant, and Comparative Example 2 is a conventional crystalline OLED device without an induction layer. The results show that the induction material without a surfactant is difficult to dissolve and cannot achieve the set target film thickness of the induction layer. The EQE and T of the prepared crystalline OLED devices are affected. 95 Performance and EQE and T of OLED devices without induction layer 95 The performance is similar. The EQE and TE of the crystalline OLED devices prepared in the examples are similar. 95 Its performance is significantly better than the comparison example.

[0250] Figure 2 The comparison of luminous efficiency of various embodiments and comparative examples is shown, from... Figure 2 As can be seen, the luminous efficiency of the crystalline OLED devices prepared in each embodiment is better than that of the crystalline OLED devices in the comparative examples.

[0251] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0252] The embodiments described above are merely illustrative of several implementation methods of this application, intended to facilitate a detailed understanding of the technical solutions of this application, but should not be construed as limiting the scope of protection of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. It should be understood that technical solutions obtained by those skilled in the art based on the technical solutions provided in this application through logical analysis, reasoning, or limited experimentation are all within the scope of protection of the appended claims. Therefore, the scope of protection of this patent application should be determined by the content of the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. An ink, characterized in that, It includes an inducing material, a surfactant, and a solvent, wherein the inducing material includes disk-shaped organic semiconductor molecules.

2. The ink according to claim 1, characterized in that, The inducing material includes one or more of disk-shaped liquid crystal materials, disk-shaped polycrystalline materials, and disk-shaped single crystal materials; Optionally, the inducing material includes one or more of the following: benzo[a]phenanthrene compounds, hexabenzo[a]methyl compounds, porphyrin compounds, phthalocyanine compounds, fused thiophene compounds, fluorene compounds, fluorenone compounds, and carbazole compounds; And / or, the surfactant includes one or more of fluorocarbon surfactants and hydrocarbon surfactants.

3. The ink according to claim 2, characterized in that, The inducing material includes one or more of 2,3,6,7,10,11-hexa(hexyloxy)benzophenanthrene, 2,3,6,7,10,11-hexa(n-octyloxo)benzophenanthrene, and 3,6,10,11-tetra(pentoxy)triphenyl-2,7-dimethylbis(2,2-dimethylpropionate). And / or, the fluorocarbon surfactant includes one or more of fluoroalkyl sulfonates and fluoroalkyl sulfonamides; optionally, the fluorocarbon surfactant includes one or more of potassium perfluorooctyl sulfonate, perfluorooctyl sulfonate amine, and N-ethyl perfluorooctyl sulfonamide. And / or, the hydrocarbon surfactant includes one or more of alkyl sulfonates and alkyl sulfates; optionally, the hydrocarbon surfactant includes one or more of sodium decaalkyl sulfate and sodium dodecyl sulfonate.

4. The ink according to any one of claims 1 to 3, characterized in that, The mass ratio of the inducing material to the surfactant is 9:1 to 6:4; Optionally, the mass ratio of the inducing material to the surfactant is 9:1 to 8:

2.

5. The ink according to any one of claims 1 to 3, characterized in that, The solvent includes one or more of methyl benzoate, toluene, xylene, chlorobenzene, chloroform, tetrahydrofuran, acetonitrile, dichloromethane, tetrahydronaphthalene, and cyclohexylbenzene; and / or, In the ink, the concentration of the inducing material is 0.5 mg / mL to 5 mg / mL.

6. A light-emitting device, characterized in that, The light-emitting device includes a first electrode, an inducing layer, a light-emitting layer, and a second electrode stacked in sequence. The material of the induction layer includes an induction material and a surfactant, wherein the induction material includes disk-shaped organic semiconductor molecules.

7. The light-emitting device according to claim 6, characterized in that, The induction layer satisfies one or more of the following conditions: (1) The thickness of the inducing layer is 10 nm to 30 nm; (2) The inducing material includes one or more of the following: disk-shaped liquid crystal material, disk-shaped polycrystalline material, and disk-shaped single crystal material; Optionally, the inducing material includes one or more of the following: benzo[a]phenanthrene compounds, hexabenzo[a]methyl compounds, porphyrin compounds, phthalocyanine compounds, fused thiophene compounds, fluorene compounds, fluorenone compounds, and carbazole compounds; Optionally, the inducing material includes one or more of 2,3,6,7,10,11-hexa(hexyloxy)benzophenanthrene, 2,3,6,7,10,11-hexa(n-octyloxo)benzophenanthrene, and 3,6,10,11-tetra(pentoxy)triphenyl-2,7-dimethylbis(2,2-dimethylpropionate); (3) The surfactant includes one or more of fluorocarbon surfactants and hydrocarbon surfactants; Optionally, the fluorocarbon surfactant includes one or more of fluoroalkyl sulfonates and fluoroalkyl sulfonamides; Optionally, the fluorocarbon surfactant includes one or more of potassium perfluorooctyl sulfonate, perfluorooctyl sulfonate amine, and N-ethyl perfluorooctyl sulfonamide; Optionally, the hydrocarbon surfactant includes one or more of alkyl sulfonates and alkyl sulfates; Optionally, the hydrocarbon surfactant includes one or more of sodium decaalkyl sulfate and sodium dodecyl sulfonate.

8. The light-emitting device according to claim 6, characterized in that, The light-emitting layer is a crystalline thin film; And / or, the material of the light-emitting layer includes a thermal exciton material; Optionally, the thermal exciton material has the general structural formula DLA, where D is the donor, A is the acceptor, and L is one of a single bond, phenylene, naphthylene, anthracene, and pyrene. Alternatively, D has one of the following structural formulas: ; A has one of the following structural formulas: R1 is a single bond or a phenylene group, R2 is hydrogen, cyano, halogen or C1~C6 alkyl, and n is an integer from 1 to 5; Optionally, the thermal exciton material is selected from one or more of the following compounds: , , , , , , , , , , , , and .

9. The light-emitting device according to any one of claims 6 to 8, characterized in that, It includes an anode, a hole injection layer, an induction layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence.

10. The light-emitting device according to claim 9, characterized in that, The light-emitting device satisfies one or more of the following conditions: (1) The materials of the anode and / or the cathode include one or more of metals, carbon materials and metal oxides, wherein the metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene and carbon fibers; the metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or include a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, wherein the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; (2) The material of the hole injection layer includes one or more of the following: TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60. (3) The materials of the electron transport layer and / or the electron injection layer include inorganic materials and / or organic materials, wherein the inorganic materials are selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin sulfide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, Li, LiF, NaF and CsF, and the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, and the organic materials are selected from one or more of the following: quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds and hydroxyquinoline compounds.

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