Light-emitting composition and light-emitting device

Abstract

The invention relates to a light-emitting composition and a light-emitting device. The light-emitting composition comprises a light-emitting material and a dispersing agent, the light-emitting material comprises an organic material with an aggregation-induced quenching effect, and the dispersing agent is a polymer dispersing agent. In the light-emitting composition, the polymer dispersant can adjust the molecular spacing of the light-emitting material, improve the aggregation-induced quenching phenomenon caused by molecular aggregation of the light-emitting material, effectively maintain or enhance the optical performance of the light-emitting material and improve the light-emitting color purity, so that the light-emitting efficiency can be maintained or enhanced when the light-emitting composition is applied to a light-emitting device.

Description

Technical Field

[0001] This application relates to the field of luminescent materials, and in particular to a luminescent composition and a luminescent device. Background Technology

[0002] Aggregation-induced quenching (ACQ) refers to the phenomenon where the luminescence intensity of some organic light-emitting materials is significantly reduced or disappears in an aggregated state. This is due to the formation of excitoassociations or excitocomplexes through intermolecular π-π interactions or other non-radiative pathways, which consume the energy of the excited state, leading to the quenching of fluorescence or phosphorescence. Since the luminescent layer in fields such as OLEDs (organic light-emitting diodes) is typically in the form of a thin film or aggregated state, the ACQ effect of organic light-emitting materials limits their application in OLEDs and other related fields. Summary of the Invention

[0003] Based on this, one or more embodiments of this application provide a luminescent composition that can improve the phenomenon of aggregation-induced quenching caused by molecular aggregation in luminescent materials with ACQ effect.

[0004] In addition, some other embodiments of this application also provide a light-emitting device.

[0005] A luminescent composition comprising: a luminescent material and a dispersant, wherein the luminescent material comprises an organic material having an aggregation-induced quenching effect, and the dispersant is a polymeric dispersant.

[0006] In some embodiments, the dispersant is a hydrophilic polymer dispersant; optionally, the dispersant includes one or more of polyethylene glycol, polyvinylpyrrolidone, polyvinyl alcohol, polyethylene ether, polyethyleneimine, polyacrylamide, polyacrylic acid, and polystyrene sulfonate.

[0007] In some embodiments, the mass percentage of the dispersant is 1% to 4%, based on the total mass of the luminescent material and the dispersant being 100%.

[0008] In some embodiments, the dispersant comprises polyvinylpyrrolidone, and the mass percentage of the dispersant is 2% to 4% based on 100% of the total mass of the luminescent material and the dispersant; or,

[0009] The dispersant includes polyethyleneimine, and the mass percentage of the dispersant is 1% to 3% based on the total mass of the luminescent material and the dispersant being 100%.

[0010] In some embodiments, the organic material with aggregation-induced quenching effect contains one or more of the following groups: naphthyl, anthraceneyl, phenanthryl, pyreneyl, and triphenyl.

[0011] In some embodiments, the organic material with aggregation-induced quenching effect has one of the following general structural formulas: , , and R1 to R8 are each independently selected from one of substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraxyl, and substituted or unsubstituted pyrene.

[0012] In some embodiments, R1 to R8 are each independently selected from one of the following groups: .

[0013] In some embodiments, the organic material having the aggregation-induced quenching effect is selected from one or more of the following structures:

[0014] , , , , , , , , , , and .

[0015] In some embodiments, the luminescent composition further includes a solvent;

[0016] In the luminescent composition, the concentration of the dispersant is 0.5 mg / mL to 5 mg / mL.

[0017] A light-emitting device includes an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, wherein the light-emitting layer is prepared from the light-emitting composition described above.

[0018] In some embodiments, the light-emitting device includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked sequentially.

[0019] In some embodiments, the light-emitting device satisfies one or more of the following conditions:

[0020] (1) The anode material includes one or more of conductive glass, transparent polymer and metal;

[0021] (2) The material of the hole injection layer includes polyethylene dioxythiophene-poly(styrene sulfonate);

[0022] (3) The material of the hole transport layer includes one or more of polymer hole transport materials and small molecule hole transport materials;

[0023] The polymer hole transport material includes one or more of poly(N-vinylcarbazole), poly[bis(4-phenyl)(4-butylphenyl)amine] and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butylphenyl)phenyl)-diphenylamine)].

[0024] The small molecule hole transport material includes one or more of 4,4',4''-tris(carbazole-9-yl)triphenylamine, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] and 4,4'-di(9-carbazole)biphenyl;

[0025] (4) The material of the electron transport layer includes one or more of the following: tris(8-hydroxyquinoline)aluminum, diphenyl[4-(triphenylsilyl)phenyl]oxyphosphine, 1,3,5-tris(3-pyridyl-3-phenyl)benzene, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 2,7-bis(diphenyloxyphosphine)-9,9'-spirobifluorene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridyl)phenyl)-2-methylpyrimidine and 4,7-diphenyl-1,10-phenanthroline;

[0026] (5) The material of the electron injection layer includes one or more of Li, LiF, NaF and CsF;

[0027] (6) The cathode material includes one or more of Ag and Al;

[0028] (7) The thickness of the light-emitting layer is 25nm~35nm.

[0029] A method for fabricating a light-emitting device includes the following steps:

[0030] A light-emitting layer is formed between the anode and the cathode, and the raw materials for preparing the light-emitting layer include the light-emitting composition described above.

[0031] In some embodiments, the luminescent composition includes a solvent, and a luminescent layer is formed between the anode and the cathode using a solution method.

[0032] Such as the application of light-emitting devices in the fabrication of optoelectronic devices.

[0033] An optoelectronic device includes the light-emitting device described above or includes a light-emitting device prepared by the preparation method described above.

[0034] The luminescent composition in some embodiments of this application includes a luminescent material and a dispersant. The luminescent material includes an organic material with ACQ effect, and the dispersant is a polymeric dispersant. The polymeric dispersant can adjust the intermolecular distance of the luminescent material, improve the phenomenon of aggregation-induced quenching caused by molecular aggregation of the luminescent material, effectively maintain or enhance the optical properties of the luminescent material, and improve the purity of the emitted color. Therefore, when applied in a light-emitting device, it can maintain or enhance the luminous efficiency. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of the structure of a light-emitting device in some embodiments of this application;

[0037] Figure 2 This is a schematic diagram of another structure of the light-emitting device in some embodiments of this application;

[0038] Figure 3 The surface roughness of the light-emitting layer prepared in each embodiment and comparative example;

[0039] Figure 4 The luminous efficiency curves are for the OLED devices prepared in each embodiment and comparative example.

[0040] Explanation of reference numerals in the attached figures:

[0041] The light-emitting device 100, anode 110, hole injection layer 120, hole transport layer 130, light-emitting layer 140, electron transport layer 150, cathode 160 and electron injection layer 170. Detailed Implementation

[0042] To facilitate understanding of this application, a more comprehensive description of the application will be provided below in conjunction with specific embodiments. Preferred embodiments of the application are given in the specific embodiments. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0044] Unless otherwise stated or in case of conflict, the terms or phrases used in this application shall have the following meanings:

[0045] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" and "second" may explicitly or implicitly include at least one of those features.

[0046] In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.

[0047] In this application, "one or more" refers to any one, any two, or any two or more of the listed items. "Several" refers to any two or more.

[0048] Unless otherwise specified, all percentage concentrations mentioned in this application refer to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of that component.

[0049] The terms "optionally" and similar expressions used in this application refer to embodiments of this application that may provide certain beneficial effects under certain circumstances. However, other embodiments may also be optional in the same or other circumstances. Furthermore, the description of one or more optional embodiments does not imply that other embodiments are unavailable, nor is it intended to exclude other embodiments from the scope of this application.

[0050] When a numerical range is disclosed in this application, the range is considered continuous and includes the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to an integer, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed in this application should be understood to include any and all subranges to which they are included.

[0051] In this application, the technical features described in an open-ended manner include both closed technical solutions consisting of the listed features and open technical solutions that include the listed features.

[0052] The terms "comprising" and "having," and any variations thereof, used in the embodiments of this application, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or components inherent to such processes, methods, products, or devices.

[0053] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0054] When describing positional relationships, unless otherwise specified, when an element such as a layer, film, or substrate is referred to as being "on" another film layer, it may be directly on the other film layer or there may be intermediate film layers. Furthermore, when a layer is referred to as being "below" another layer, it may be directly below it or there may be one or more intermediate layers. It is also understood that when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intermediate layers.

[0055] A first aspect of this application provides a luminescent composition comprising: a luminescent material and a dispersant, wherein the luminescent material comprises an organic material having an aggregation-induced quenching effect, and the dispersant is a polymeric dispersant.

[0056] The luminescent composition in some embodiments of this application includes a luminescent material and a dispersant. The luminescent material includes an organic material with ACQ effect, and the dispersant is a polymeric dispersant. The polymeric dispersant can adjust the intermolecular distance of the luminescent material, improve the phenomenon of aggregation-induced quenching caused by molecular aggregation of the luminescent material, effectively maintain or enhance the optical properties of the luminescent material, and improve the purity of the emitted color. Therefore, when applied in a light-emitting device, it can maintain or enhance the luminous efficiency.

[0057] In some embodiments, the mass percentage of the dispersant is 1% to 4% based on the total mass of the luminescent material and the dispersant being 100%. For example, the mass percentage of the dispersant may be, but is not limited to, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, or any combination of these values, based on the total mass of the luminescent material and the dispersant being 100%.

[0058] In some embodiments, the dispersant is a hydrophilic polymer dispersant. Specifically, the dispersant includes one or more of polyethylene glycol (PEG), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polyethylene ether, polyethyleneimine (PEI), polyacrylamide, polyacrylic acid, and polystyrene sulfonate. By optimizing the dispersant, the impact of the dispersant on the electrical performance of the device can be effectively reduced, further reducing power consumption and improving stability.

[0059] In some embodiments, the dispersant comprises polyethylene glycol (PEG) with a number-average molecular weight between 100,000 and 2,000,000; polyvinylpyrrolidone (PVP) with a number-average molecular weight between 2,000,000 and 5,000,000; polyvinyl alcohol (PVA) with a number-average molecular weight between 1,000,000 and 3,000,000; and polyethyleneimine (PEI) with a number-average molecular weight between 1,000,000 and 20,000,000.

[0060] In some embodiments, the dispersant comprises polyvinylpyrrolidone, and the mass percentage of the dispersant is 2% to 4% based on 100% of the total mass of the luminescent material and the dispersant. Further, the dispersant comprises polyvinylpyrrolidone, and the mass percentage of the dispersant is 2% to 3% based on 100% of the total mass of the luminescent material and the dispersant.

[0061] In some other embodiments, the dispersant comprises polyethyleneimine, and the mass percentage of the dispersant is 1% to 3% based on 100% of the total mass of the luminescent material and the dispersant. Further, the dispersant comprises polyethyleneimine, and the mass percentage of the dispersant is 1% to 2% based on 100% of the total mass of the luminescent material and the dispersant.

[0062] In some embodiments, the mass percentage of the dispersant is 2% to 3% based on the total mass of the luminescent material and the dispersant being 100%.

[0063] By optimizing the amount and type of dispersant, the luminous efficiency of OLED devices can be further improved. Since the dispersant itself does not emit light, adding too much dispersant is detrimental to the luminous performance of the light-emitting device, while adding too little or no dispersant results in poor spreadability and film formation of the luminescent layer on the substrate.

[0064] In some embodiments, the organic material having aggregation-induced quenching effect contains one or more of the following groups: naphthyl, anthraceneyl, phenanthryl, pyreneyl, and triphenyl.

[0065] In some embodiments, the organic material with aggregation-induced quenching effect has one of the following general structural formulas: , , and R1 to R8 are each independently selected from one of substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraxyl, and substituted or unsubstituted pyrene.

[0066] In some embodiments, R1 to R8 are each independently selected from one of the following groups: .

[0067] In some embodiments, the organic material having the aggregation-induced quenching effect is selected from one or more of the following structures:

[0068] , , , , , , , , , , and .

[0069] In some embodiments, the luminescent composition further includes a solvent. Specifically, the solvent may be, but is not limited to, one or more of acetone, acetonitrile, methyl benzoate, chloroform, toluene, chlorobenzene, tetrahydrofuran, xylene, toluene, cyclohexylbenzene, dichloromethane, tetrahydronaphthalene, and methanol.

[0070] In some embodiments, the concentration of the dispersant in the luminescent composition is 0.5 mg / mL to 5 mg / mL. For example, the concentration of the dispersant in the luminescent composition may be, but is not limited to, 0.5 mg / mL, 1 mg / mL, 1.5 mg / mL, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL, 5 mg / mL, or any combination of these values.

[0071] It is understood that the concentration of the dispersant can be adjusted depending on the solvent used. For example, in one specific example, the solvent in the luminescent composition is methyl benzoate, and the dispersant concentration is 5 mg / ml. In another example, the solvent in the luminescent composition is xylene, and the dispersant concentration is 2.5 mg / ml.

[0072] When the luminescent composition exists in solvent form, the concentration of the luminescent composition can be effectively controlled by adjusting the dispersant, thereby improving spreadability, optimizing the coating process and uniformity of the luminescent layer, and improving the luminescence quality.

[0073] A second aspect of this application provides a light-emitting device, including an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, wherein the light-emitting layer is prepared from the light-emitting composition described above.

[0074] The materials of the light-emitting layer in the above-mentioned light-emitting device include light-emitting materials and dispersants. The light-emitting materials include organic materials with ACQ effect, and the dispersants are polymeric dispersants. The polymeric dispersants can adjust the intermolecular distance of the light-emitting materials, improve the phenomenon of aggregation-induced quenching caused by molecular aggregation of the light-emitting materials, effectively maintain or enhance the optical properties of the light-emitting materials, and improve the purity of the emitted color, so that the light-emitting device can maintain or enhance the luminous efficiency.

[0075] Furthermore, by optimizing the dispersant, the impact of the dispersant on the electrical performance of the light-emitting device can be effectively reduced, thereby lowering power consumption and improving stability.

[0076] In some embodiments, the thickness of the light-emitting layer is 25 nm to 35 nm. For example, the thickness of the light-emitting layer may be, but is not limited to, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, or any combination of these values.

[0077] In some embodiments, the cathode material includes one or more of Ag and Al.

[0078] In some embodiments, the anode material includes one of conductive glass, a transparent polymer, and a metal. Specifically, the conductive glass includes, but is not limited to, indium tin oxide (ITO) conductive glass. Specifically, the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg.

[0079] In some embodiments, the light-emitting device further includes one or two of a hole injection layer and a hole transport layer disposed between the anode and the light-emitting layer, and one or two of an electron transport layer and an electron injection layer disposed between the light-emitting layer and the cathode.

[0080] In some of these embodiments, please refer to Figure 1 The light-emitting device consists of an anode 110, a hole injection layer 120, a hole transport layer 130, a light-emitting layer 140, an electron transport layer 150, and a cathode 160 stacked in sequence.

[0081] In other embodiments, please refer to Figure 2 An electron injection layer 170 is also provided between the electron transport layer 150 and the cathode 160.

[0082] In some embodiments, the material of the hole injection layer includes, but is not limited to, polyethylene dioxythiophene-poly(styrene sulfonate) (PEDOT:PSS). It is understood that the above only provides one commonly used material for hole injection layers, but it is not limited to this, and other materials commonly used in the art can also be used.

[0083] In some embodiments, the material of the hole transport layer includes one or more of polymer hole transport materials and small molecule hole transport materials.

[0084] Specifically, the polymer hole transport material includes, but is not limited to, one or more of poly(N-vinylcarbazole) (PVK), poly[bis(4-phenyl)(4-butylphenyl)amine] (poly-TPD), and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butylphenyl)-diphenylamine)] (TFB).

[0085] Specifically, the small molecule hole transport materials include, but are not limited to, one or more of 4,4',4''-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), and 4,4'-bis(9-carbazole)biphenyl (CBP).

[0086] In some embodiments, the materials of the electron transport layer include tris(8-hydroxyquinoline)aluminum (Alq3), diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1), 1,3,5-tris(3-pyridyl-3-phenyl)benzene (TmPyPB), 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole (PBD), bis(10-hydroxybenzo[h]quinoline)beryllium (BeBq2), and 3-(biphenyl-4-yl)-5 One or more of the following: -(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), 2,7-bis(diphenyloxyphosphino)-9,9'-spirodifluorene (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)phenyl (TPBI), 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine (B3PYMPM), and 4,7-diphenyl-1,10-phenanthroline (BPhen).

[0087] In some embodiments, the material of the electron injection layer may be, but is not limited to, one or more of Li, LiF, NaF and CsF.

[0088] It is understood that in other embodiments of this application, the light-emitting device may also include other functional layers, such as hole blocking layers, hole modification layers, electron blocking layers, etc.

[0089] A third aspect of this application provides a method for fabricating a light-emitting device, comprising the following steps:

[0090] A light-emitting layer is formed between the anode and the cathode, and the raw materials for preparing the light-emitting layer include the light-emitting composition provided in the first aspect above.

[0091] In some embodiments, the luminescent composition includes a solvent, and a luminescent layer is formed between the anode and the cathode using a solution method. Forming the luminescent layer using a solution method has advantages such as low preparation cost, simple process, and strong controllability, which is beneficial for industrial production.

[0092] In some embodiments, the concentration of the dispersant in the luminescent composition is 0.5 mg / mL to 5 mg / mL. By adjusting the dispersant, the concentration of the solution can be effectively controlled to improve spreadability, optimize the coating process and uniformity of the luminescent layer, and improve the luminescence quality.

[0093] In some embodiments, the light-emitting device further includes one or two of a hole injection layer and a hole transport layer disposed between the anode and the light-emitting layer, and one or two of an electron transport layer and an electron injection layer disposed between the light-emitting layer and the cathode.

[0094] In some embodiments, the method for fabricating the light-emitting device further includes:

[0095] One or both of a hole injection layer and a hole transport layer are formed on the anode surface, and the light-emitting layer is formed on the side of the hole transport layer away from the anode.

[0096] One or both of an electron transport layer and an electron injection layer are formed on the side of the light-emitting layer away from the anode, and a cathode is formed on the surface of the electron injection layer away from the anode.

[0097] The specific methods for forming each layer can be those commonly used in the field, such as using a solution method to form the hole injection layer and the hole transport layer, or using a vapor deposition method to form the electron transport layer, the electron injection layer, and the cathode.

[0098] The fourth aspect of this application provides an application of the light-emitting device as described above in the fabrication of optoelectronic devices.

[0099] The fifth aspect of this application provides an optoelectronic device, including the light-emitting device provided in the second aspect above, or including a light-emitting device prepared by the preparation method of the third aspect above.

[0100] Specifically, optoelectronic devices include display devices or solid-state lighting devices.

[0101] To make the objectives and advantages of this application clearer, the following detailed description of the light-emitting device and its effects, in conjunction with specific embodiments, is provided. It should be understood that the specific embodiments described herein are merely illustrative and should not be construed as limiting the scope of this application. Unless otherwise specified, the following embodiments do not include components other than unavoidable impurities. Unless otherwise specified, the drugs and instruments used in the embodiments are conventional choices in the art. Experimental methods not specifying specific conditions in the embodiments are implemented under conventional conditions, such as those described in literature, books, or methods recommended by the manufacturer.

[0102] Example 1

[0103] This embodiment provides an OLED device, and the fabrication steps are as follows:

[0104] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0105] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0106] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0107] (4) A luminescent composition was deposited on the hole transport layer by solution method, with anthracene derivative (E)-3-(2-(anthracene-9-vinyl)vinyl)benzyl nitrile (M-ANCN) and polyvinylpyrrolidone (PVP) as the luminescent material and dispersant, respectively, with a mass ratio of 99:1. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0108] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0109] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0110] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0111] Example 2

[0112] This embodiment provides an OLED device, similar to the OLED device in Embodiment 1, except that the mass ratio of luminescent material to dispersant in the luminescent layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0113] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0114] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0115] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0116] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PVP as the luminescent material and dispersant, respectively, in a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0117] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0118] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0119] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0120] Example 3

[0121] This embodiment provides an OLED device, similar to the OLED device in Embodiment 1, except that the mass ratio of luminescent material to dispersant in the luminescent layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0122] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0123] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0124] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0125] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PVP as the luminescent material and dispersant, respectively, in a mass ratio of 97:3. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0126] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0127] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0128] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0129] Example 4

[0130] This embodiment provides an OLED device, similar to the OLED device in Embodiment 1, except that the mass ratio of luminescent material to dispersant in the luminescent layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0131] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0132] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0133] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0134] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PVP as the luminescent material and dispersant, respectively, in a mass ratio of 96:4. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0135] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0136] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0137] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0138] Example 5

[0139] This embodiment provides an OLED device, similar to the OLED device in Embodiment 1, except that the type of dispersant in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0140] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0141] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0142] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0143] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PEI as the luminescent material and dispersant, respectively, in a mass ratio of 99:1. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0144] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0145] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0146] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0147] Example 6

[0148] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the type of dispersant in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0149] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0150] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0151] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0152] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PEI as the luminescent material and dispersant, respectively, in a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0153] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0154] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0155] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0156] Example 7

[0157] This embodiment provides an OLED device, similar to the OLED device in Embodiment 3, except that the type of dispersant in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0158] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0159] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0160] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0161] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PEI as the luminescent material and dispersant, respectively, in a mass ratio of 97:3. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0162] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0163] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0164] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0165] Example 8

[0166] This embodiment provides an OLED device, similar to the OLED device in Embodiment 4, except that the type of dispersant in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0167] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0168] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0169] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0170] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PEI as the luminescent material and dispersant, respectively, in a mass ratio of 96:4. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0171] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0172] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0173] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0174] Example 9

[0175] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the type of dispersant in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0176] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0177] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0178] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0179] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PVA as the luminescent material and dispersant, respectively, in a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0180] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0181] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0182] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0183] Example 10

[0184] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the type of dispersant in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0185] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0186] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0187] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0188] (4) A luminescent composition was deposited on the hole transport layer by solution method, with M-ANCN and PEG as the luminescent material and dispersant, respectively, in a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0189] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0190] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0191] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0192] Example 11

[0193] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the light-emitting material in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0194] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0195] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0196] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0197] (4) A luminescent composition was deposited on the hole transport layer by solution method, with pyrene derivative Py2Ph and PVP as luminescent material and dispersant respectively, with a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0198] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0199] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0200] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0201] Example 12

[0202] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the light-emitting material in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0203] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0204] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0205] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0206] (4) A luminescent composition was deposited on the hole transport layer by solution method, with phenanthrene derivatives PAC and PVP as luminescent materials and dispersants respectively, with a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0207] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0208] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0209] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0210] Example 13

[0211] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the light-emitting material in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0212] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0213] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0214] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0215] (4) A luminescent composition was deposited on the hole transport layer by solution method, with naphthalene derivatives CNNPI and PVP as the luminescent material and dispersant, respectively, in a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0216] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0217] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0218] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0219] Example 14

[0220] This embodiment provides an OLED device, similar to the OLED device in Embodiment 2, except that the light-emitting material in the light-emitting layer is different. The fabrication steps of the OLED device in this embodiment are as follows:

[0221] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0222] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0223] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0224] (4) A luminescent composition was deposited on the hole transport layer by solution method. The terphenyl derivative TPB-AC and PVP were used as the luminescent material and dispersant, respectively, with a mass ratio of 98:2. The concentration of the dispersant in the solution was 0.5 mg / mL, the solvent was chloroform, and the thickness of the resulting luminescent layer was 35 nm.

[0225] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0226] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0227] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0228] Comparative Example 1

[0229] Comparative Example 1 provides an OLED device similar to the OLED device of Example 1, except that the light-emitting layer does not contain a dispersant. The preparation steps are as follows:

[0230] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0231] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0232] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0233] (4) M-ANCN was deposited as a light-emitting layer on the hole transport layer using a solution method. The concentration of the light-emitting material in the solution was 7 mg / ml (the solvent was chloroform), and the thickness was 35 nm.

[0234] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0235] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0236] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0237] Comparative Example 2

[0238] Comparative Example 2 provides an OLED device similar to the OLED device of Example 11, except that the light-emitting layer does not contain a dispersant. The preparation steps are as follows:

[0239] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0240] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0241] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0242] (4) A pyrene derivative Py2Ph was deposited on the hole transport layer as a light-emitting layer using a solution method. The concentration of the light-emitting material in the solution was 7 mg / ml (the solvent was chloroform), and the thickness was 35 nm.

[0243] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0244] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0245] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0246] Comparative Example 3

[0247] Comparative Example 3 provides an OLED device similar to the OLED device of Example 12, except that the light-emitting layer does not contain a dispersant. The preparation steps are as follows:

[0248] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0249] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0250] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0251] (4) PAC, a phenanthrene derivative, was deposited on the hole transport layer using a solution method as the light-emitting layer. The concentration of the light-emitting material in the solution was 7 mg / ml (the solvent was chloroform), and the thickness was 35 nm.

[0252] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0253] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0254] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0255] Comparative Example 4

[0256] Comparative Example 4 provides an OLED device similar to the OLED device of Example 13, except that the light-emitting layer does not contain a dispersant. The preparation steps are as follows:

[0257] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0258] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0259] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0260] (4) A naphthalene derivative CNNPI was deposited on the hole transport layer using a solution method as the luminescent layer. The concentration of the luminescent material in the solution was 7 mg / ml (the solvent was chloroform), and the thickness was 35 nm.

[0261] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0262] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0263] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0264] Comparative Example 5

[0265] Comparative Example 5 provides an OLED device similar to the OLED device of Example 14, except that the light-emitting layer does not contain a dispersant. The preparation steps are as follows:

[0266] (1) A transparent conductive thin film ITO is used as the anode with a thickness of 50 nm.

[0267] (2) PEDOT:PSS was deposited on the anode as a hole injection layer with a thickness of 30 nm using a solution method.

[0268] (3) PVK was deposited on the hole injection layer as a hole transport layer using a solution method, with a thickness of 20 nm.

[0269] (4) A terphenyl derivative TPB-AC was deposited on the hole transport layer as a light-emitting layer using a solution method. The concentration of the light-emitting material in the solution was 7 mg / ml (the solvent was chloroform), and the thickness was 35 nm.

[0270] (5) SPPO13 was deposited on the light-emitting layer as an electron transport layer by vapor deposition, with a thickness of 30 nm.

[0271] (6) LiF was deposited on the electron transport layer as an electron injection layer by vapor deposition, with a thickness of 100 nm.

[0272] (7) Al was deposited on the electron injection layer as a cathode by evaporation, with a thickness of 100 nm, to obtain an OLED device.

[0273] The OLED devices prepared in the above embodiments and comparative examples were tested, and the experimental data are shown in Table 1 below. Wherein, V@10mA / cm 2 This indicates a current density of 10 mA / cm². 2 The corresponding driving voltage, in V; EQE@10mA / cm 2This indicates a current density of 10 mA / cm². 2 The corresponding EQE (external quantum efficiency) is expressed in %T. 95 (h)@1000cd / m 2 This indicates that the device has an initial brightness of 1000 cd / m². 2 The light continues to illuminate until the brightness decreases to 95% of the initial brightness (950 cd / m²). 2 The time elapsed during which the time is expressed in hours (h).

[0274] Table 1 Performance data of OLED devices in each embodiment and comparative example

[0275]

[0276] In the OLED devices of Examples 1-4, the dispersant is PVP in the light-emitting layer; in the OLED devices of Examples 5-8, the dispersant is PEI in the light-emitting layer; in the OLED device of Example 9, the dispersant is PVA in the light-emitting layer; and in the OLED device of Example 10, the dispersant is PEG in the light-emitting layer. In the OLED devices of Examples 11-14, the dispersant is PVP, and the light-emitting materials are different. Comparative Examples 1-5 represent OLED device structures in the conventional technology where the light-emitting layer does not contain a dispersant.

[0277] Experiments have shown that introducing a dispersant into the luminescent layer reduces surface roughness, resulting in better film-forming performance. Films without a dispersant exhibit a rougher surface due to molecular aggregation. For details, please refer to [link to relevant documentation]. Figure 3 , Figure 3 The surface roughness of the light-emitting layers prepared in each embodiment and comparative example is shown in the figure. Figure 3 It can be clearly seen that the surface roughness is reduced after the dispersant is introduced into the light-emitting layer.

[0278] Figure 4 This shows a comparison of the luminous efficiency of the OLED devices prepared in various embodiments and comparative examples. Figure 4 As can be seen, the luminous efficiency of the OLED device prepared in the examples is better than that of the OLED device prepared in the comparative examples. By optimizing the amount and type of dispersant, the luminous efficiency of the OLED device can be further improved.

[0279] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0280] The embodiments described above are merely illustrative of several implementation methods of this application, intended to facilitate a detailed understanding of the technical solutions of this application, but should not be construed as limiting the scope of protection of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. It should be understood that technical solutions obtained by those skilled in the art based on the technical solutions provided in this application through logical analysis, reasoning, or limited experimentation are all within the scope of protection of the appended claims. Therefore, the scope of protection of this patent application should be determined by the content of the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. A luminescent composition, characterized in that, include: The luminescent material includes an organic material having an aggregation-induced quenching effect, and the dispersant is a polymeric dispersant.

2. The luminescent composition according to claim 1, characterized in that, The dispersant is a hydrophilic polymer dispersant; optionally, the dispersant includes one or more of polyethylene glycol, polyvinylpyrrolidone, polyvinyl alcohol, polyethylene ether, polyethyleneimine, polyacrylamide, polyacrylic acid, and polystyrene sulfonate.

3. The luminescent composition according to claim 1 or 2, characterized in that, With the total mass of the luminescent material and the dispersant being 100%, the mass percentage of the dispersant is 1% to 4%.

4. The luminescent composition according to claim 3, characterized in that, The dispersant comprises polyvinylpyrrolidone, and the mass percentage of the dispersant is 2% to 4% based on the total mass of the luminescent material and the dispersant being 100%; or... The dispersant includes polyethyleneimine, and the mass percentage of the dispersant is 1% to 3% based on the total mass of the luminescent material and the dispersant being 100%.

5. The luminescent composition according to claim 1, characterized in that, The organic material with aggregation-induced quenching effect contains one or more of the following groups: naphthyl, anthraceneyl, phenanthryl, pyreneyl, and triphenyl. Optionally, the organic material with aggregation-induced quenching effect has one of the following general structural formulas: , , and R1 to R8 are each independently selected from one of substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraxyl, and substituted or unsubstituted pyrene. Optionally, R1 to R8 are each independently selected from one of the following groups: .

6. The luminescent composition according to claim 5, characterized in that, The organic material exhibiting aggregation-induced quenching effect is selected from one or more of the following structures: , , , , , , , , , , and .

7. The luminescent composition according to any one of claims 1-2 and 4-6, characterized in that, It also includes solvents; In the luminescent composition, the concentration of the dispersant is 0.5 mg / mL to 5 mg / mL.

8. A light-emitting device, characterized in that, It includes an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, wherein the raw materials for preparing the light-emitting layer include the light-emitting composition according to any one of claims 1 to 7.

9. The light-emitting device according to claim 8, characterized in that, The light-emitting device includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence.

10. The light-emitting device according to claim 9, characterized in that, The light-emitting device satisfies one or more of the following conditions: (1) The anode material includes one or more of conductive glass, transparent polymer and metal; (2) The material of the hole injection layer includes polyethylene dioxythiophene-poly(styrene sulfonate); (3) The material of the hole transport layer includes one or more of polymer hole transport materials and small molecule hole transport materials; The polymer hole transport material includes one or more of poly(N-vinylcarbazole), poly[bis(4-phenyl)(4-butylphenyl)amine] and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butylphenyl)phenyl)-diphenylamine)]. The small molecule hole transport material includes one or more of 4,4',4''-tris(carbazole-9-yl)triphenylamine, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] and 4,4'-di(9-carbazole)biphenyl; (4) The material of the electron transport layer includes one or more of the following: tris(8-hydroxyquinoline)aluminum, diphenyl[4-(triphenylsilyl)phenyl]oxyphosphine, 1,3,5-tris(3-pyridyl-3-phenyl)benzene, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 2,7-bis(diphenyloxyphosphine)-9,9'-spirobifluorene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridyl)phenyl)-2-methylpyrimidine and 4,7-diphenyl-1,10-phenanthroline; (5) The material of the electron injection layer includes one or more of Li, LiF, NaF and CsF; (6) The cathode material includes one or more of Ag and Al; (7) The thickness of the light-emitting layer is 25nm~35nm.

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