Silicon wafer oxide layer testing device and testing method, silicon wafer and solar cell

Abstract

The invention provides a silicon wafer oxide layer testing device and method, a silicon wafer and a solar cell, the testing device comprises a hollow telescopic rod, the top end of the hollow telescopic rod is provided with a liquid outlet and a boss, and the boss is used for bearing deionized water released by the liquid outlet and forming liquid drops; the conveying device is configured to convey the silicon wafer to the upper part of the hollow telescopic rod; the imaging device is configured to shoot a moistening and dyeing pattern formed after the liquid drop is in contact with the to-be-detected surface of the silicon wafer; and the computing equipment is configured to receive the moistening and dyeing pattern image transmitted by the imaging device and judge the growth condition of the oxide layer of the silicon wafer based on the size of the moistening and dyeing pattern. According to the silicon wafer oxide layer testing device and the testing method, higher testing efficiency is achieved when the oxide layer of the silicon wafer is tested.

Description

Technical Field

[0001] This application relates to the field of solar cells, and more particularly to a silicon wafer oxide layer testing device, testing method, silicon wafer, and solar cell. Background Technology

[0002] During the production of solar cells, an oxide layer is formed on the surface of the silicon wafer during the oxidation or annealing process. The quality of the oxide layer affects subsequent processes and the performance of the solar cell. Therefore, how to quickly determine the growth quality of the oxide layer has become a pressing technical problem for those skilled in the art. Summary of the Invention

[0003] To address the aforementioned technical problems, this application discloses a silicon wafer oxide layer testing device, testing method, silicon wafer, and solar cell to quickly determine the growth quality of the oxide layer.

[0004] In a first aspect, this application provides a silicon wafer oxide layer testing apparatus, the testing apparatus comprising:

[0005] A hollow telescopic rod, the top of which has a liquid outlet and a boss, the boss being used to support deionized water released from the liquid outlet and form droplets;

[0006] A conveying device configured to convey the silicon wafer above the hollow telescopic rod;

[0007] An imaging device configured to capture a wetting pattern formed after the droplet contacts the test surface of the silicon wafer;

[0008] A computing device configured to receive a stained pattern image transmitted by the imaging device and determine the oxide layer growth status of the silicon wafer based on the size of the stained pattern.

[0009] In some embodiments of this application, the diameter of the boss is 0.5cm to 3cm.

[0010] In some embodiments of this application, the distance between the top stop of the boss and the test surface of the silicon wafer is H1, and the thickness of the droplet is H2, satisfying: 1mm≤H2-H1≤2mm.

[0011] In some embodiments of this application, the boss and the hollow telescopic rod are an integral structure or a separate structure, and the boss is made of a hydrophobic material.

[0012] In some embodiments of this application, the number of hollow telescopic rods is at least one, and when the number of hollow telescopic rods is multiple, the multiple hollow telescopic rods are arranged in an array.

[0013] In some embodiments of this application, the outer edge of the top of the boss is chamfered.

[0014] In some embodiments of this application, the hydrophobic material includes at least one of polytetrafluoroethylene, polyethylene, polypropylene, polyamide, polyacrylonitrile, polyester, polycarbonate and fluorosilicone resin.

[0015] Secondly, this application provides a method for testing the oxide layer of a silicon wafer, using the silicon wafer oxide layer testing apparatus described in the first aspect, the method comprising:

[0016] The hollow telescopic rod is controlled to release deionized water from its outlet to the boss and form droplets at the boss;

[0017] The conveying device is controlled to convey the silicon wafer above the hollow telescopic rod, and the test surface of the silicon wafer is oriented toward the droplet;

[0018] The hollow telescopic rod is controlled to move closer to the test surface of the silicon wafer, so that the droplets on the protrusion come into contact with the test surface and form a wetting pattern;

[0019] The imaging device is controlled to capture the dyed pattern and transmit the dyed pattern to a computing device;

[0020] The computing device is controlled to determine the oxide layer growth status of the silicon wafer based on the size of the dyeing pattern.

[0021] In some embodiments of this application, the contact time between the droplet and the surface to be tested is 0.5s to 2s.

[0022] In some embodiments of this application, controlling the computing device to determine the oxide layer growth status of the silicon wafer based on the size of the wetting pattern includes:

[0023] The degree of hydrophilicity of the oxide layer is determined by comparing the size of the preset standard dyeing pattern with the size of the tested dyeing pattern.

[0024] Compared with the prior art, this application has at least the following beneficial effects:

[0025] This application provides a silicon wafer oxide layer testing device and method. The testing device includes a hollow telescopic rod, a conveying device, an imaging device, and a computing device. A protrusion at the top of the hollow telescopic rod can hold deionized water released from the outlet, forming droplets. The telescopic movement of the hollow telescopic rod causes the droplets to contact the test surface of the silicon wafer, forming a wetting pattern. The imaging device captures the wetting pattern and sends it to the computing device, which can determine the oxide layer growth status of the silicon wafer based on the size of the wetting pattern. Because this application uses droplets on the protrusion surface to contact the silicon wafer from bottom to top to form the wetting pattern, rather than dripping water from top to bottom onto the silicon wafer surface, there is no need to wait for the water to diffuse on the silicon wafer surface, saving the time spent waiting for diffusion. Therefore, the silicon wafer oxide layer testing device and method of this application can quickly determine the growth quality of the oxide layer when testing it, resulting in higher testing efficiency. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of a silicon wafer oxide layer testing device according to one embodiment of this application;

[0028] Figure 2 This is a schematic diagram of the silicon wafer oxide layer testing device in another embodiment of this application;

[0029] Figure 3 This is a schematic diagram of the hollow telescopic rod in one embodiment of this application;

[0030] Figure 4 This is a schematic diagram of the hollow telescopic rod in another embodiment of this application.

[0031] Explanation of reference numerals in the attached figures:

[0032] 1-Hollow telescopic rod, 2-Conveying device, 3-Silicon wafer, 4-Imaging device, 5-Computing device;

[0033] 11-Telescopic mechanism, 12-Liquid outlet, 13-Boss, 14-Droplet, 15-Pipeline, 16-Water pipe, 17-Valve. Detailed Implementation

[0034] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0035] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0036] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0037] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0038] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0039] The technical solution of this application will be further described below with reference to the embodiments and accompanying drawings.

[0040] Currently, the production process of passivated contact solar cells involves multiple oxidation or annealing steps. Both oxidation and annealing processes grow a uniform and dense oxide layer on the silicon wafer surface under high-temperature conditions. The oxidation process grows an oxide layer on the front surface of the solar cell, utilizing the principle that the oxide layer does not react with strong alkalis to protect the front surface. The annealing process grows a dense oxide layer on the front surface of the solar cell, using this oxide layer to resist PID (Potential Induced Degradation). PID degradation is a reaction between the solar cell and the glass or adhesive materials (such as EVA (ethylene-vinyl acetate copolymer) of the module during long-term high-temperature and high-humidity operation after the solar cell is manufactured. Sodium ions or acetic acid slowly separate from the glass or EVA, corroding the solar cell surface and leading to a decrease in solar cell efficiency. Therefore, the anti-PID effect of the oxide layer can be utilized by growing an oxide layer on the silicon wafer surface. The oxidation process in solar cell manufacturing involves growing a thin oxide layer on the surface of a silicon wafer using high-temperature oxygen. The thickness of this oxide layer is in the nanometer range, between 2nm and 5nm, and cannot be directly identified from the appearance. Therefore, an oxide layer testing method is needed to determine the growth status of the oxide layer on the silicon wafer surface.

[0041] In view of this, firstly, this application provides a silicon wafer oxide layer testing device, see [link to relevant documentation]. Figures 1-3 The testing device includes: a hollow telescopic rod 1, the top of which has a liquid outlet 12 and a boss 13, the boss 13 being used to support deionized water released from the liquid outlet 12 and form droplets 14; a conveying device 2, configured to convey a silicon wafer 3 above the hollow telescopic rod 1; an imaging device 4, configured to capture a wetting pattern formed after the droplets contact the test surface of the silicon wafer; and a computing device 5, configured to receive the wetting pattern image transmitted by the imaging device and determine the oxide layer growth of the silicon wafer based on the size of the wetting pattern.

[0042] The hollow telescopic rod of this application can be a telescopic structure. In one optional embodiment, see... Figure 2 The lower end of the hollow telescopic rod 1 is connected to the top end of the telescopic mechanism 11, thereby enabling the hollow telescopic rod to move closer to or away from the silicon wafer through the telescopic movement of the telescopic mechanism. This application does not impose any particular limitation on the telescopic mechanism, as long as it can achieve the purpose of telescopic extension and retraction of the hollow telescopic rod, such as a cylinder, hydraulic cylinder, or screw. The hollow telescopic rod 1 has an internal pipe 15, one end of which is connected to a water pipe 16, and the other end is connected to a liquid outlet 12, used to transport deionized water from the water pipe to the liquid outlet.

[0043] This application utilizes a protrusion at the top of a hollow telescopic rod to support deionized water released from the outlet, forming droplets. Through the telescopic movement of the rod, the droplets contact the test surface of the silicon wafer, forming a wetting pattern. An imaging device captures this wetting pattern and transmits it to a computing device, which can determine the oxide layer growth status of the silicon wafer based on the size of the wetting pattern. Because this application forms the wetting pattern by having droplets on the protrusion surface contact the silicon wafer from bottom to top, rather than dripping water from top to bottom, it avoids the influence of gravity on droplet spreading. Therefore, it eliminates the need to wait for the droplets to diffuse on the silicon wafer surface, saving time spent waiting for diffusion. Thus, the silicon wafer oxide layer testing device and method of this application can quickly determine the growth quality of the oxide layer, resulting in higher testing efficiency.

[0044] In one optional embodiment, the diameter of the boss is 0.5 cm to 3 cm, preferably 1 cm to 2 cm. The inventors have discovered a positive correlation between the diameter of the boss and the diameter of the droplet, which in turn is positively correlated with the size of the dyeing pattern. Based on this discovery, this application, by controlling the diameter of the boss within the above-mentioned range, facilitates the quantitative analysis of the spreading size of the dyeing pattern, thereby facilitating the accurate determination of the hydrophilicity of the oxide layer and, consequently, the accurate determination of the growth status of the oxide layer.

[0045] In one alternative implementation, such as Figure 3 As shown, the distance between the top stop point of the boss 13 and the test surface of the silicon wafer 3 is H1, and the thickness of the droplet 14 is H2, satisfying: 1mm ≤ H2 - H1 ≤ 2mm. In this application, the top stop point of the boss refers to the position where the boss moves upward the maximum distance driven by the hollow telescopic rod. When the boss moves to this position, the distance between the boss and the test surface of the silicon wafer is minimized. When H1 and H2 satisfy the above relationship, the droplet can fully contact the test surface of the silicon wafer to wet the test surface, while preventing the boss from damaging the silicon wafer by touching the test surface, thus protecting the silicon wafer while conducting efficient testing. This application can measure the distance between the top stop point of the boss and the test surface of the silicon wafer using high-precision millimeter-wave radar; in addition, since the droplet can be approximated as a hemispherical shape, the thickness of the droplet can be calculated by controlling the amount of deionized water released each time. The specific calculation process will not be elaborated here.

[0046] In one alternative embodiment, the boss and the hollow telescopic rod are either an integral or separate structure, and the boss is made of a hydrophobic material. The hydrophobic material of the boss makes it easier for hemispherical droplets to form on its surface, thus facilitating the formation of regularly shaped, diffused patterns.

[0047] In one alternative implementation, such as Figure 3As shown, the boss and the hollow telescopic rod are an integral structure. Both the boss and the hollow telescopic rod can be made of the same material, such as plastic, offering advantages such as simple structure and ease of manufacturing. A valve 17 can also be installed on the pipeline 15 to control the opening and closing of the outlet, and to quantitatively release deionized water into the outlet to form uniformly sized droplets. The valve in this application can be a solenoid valve, which can precisely control the opening and closing time of the pipeline, thereby controlling the amount of deionized water released to the surface of the boss.

[0048] In one alternative implementation, such as Figure 4 As shown, the boss 13 and the hollow telescopic rod 1 are separate structures. The boss and the hollow telescopic rod can be made of different materials, for example, the boss can be made of plastic and the hollow telescopic rod can be made of metal, specifically, stainless steel. On the one hand, this can increase the strength of the hollow telescopic rod and improve the service life of the silicon wafer oxide layer testing device of this application; on the other hand, the boss can be replaced separately after it is damaged, without having to replace the hollow telescopic rod together with the boss, thus reducing the operating cost of the silicon wafer oxide layer testing device of this application.

[0049] The number of hollow telescopic rods is at least one. For example, the number of hollow telescopic rods is one; or, the number of hollow telescopic rods is multiple. In an optional embodiment, multiple hollow telescopic rods are arranged in an array. This array can be several hollow telescopic rods equidistantly arranged along the moving direction of the conveying device. In this way, each hollow telescopic rod in the array can perform droplet wetting on one silicon wafer in one test, thereby testing multiple silicon wafers in one test, which is beneficial to further improve testing efficiency. The number of hollow telescopic rods in the array of this application can be 2 to 10. Correspondingly, an imaging device can be configured for each hollow telescopic rod in the array. These imaging devices are connected to the computing device through wired or wireless means. This application does not have a particular limitation on the placement of the imaging device, as long as it can image the wetting pattern. For example, the imaging device can be placed next to the hollow telescopic rod and below the silicon wafer.

[0050] In one alternative implementation, refer to Figures 1-3 The outer edge of the top of the boss is chamfered, which reduces the risk of the silicon wafer being scratched by the boss if the boss comes into accidental contact with it, thus protecting the silicon wafer.

[0051] In one alternative embodiment, the hydrophobic material includes at least one selected from polytetrafluoroethylene, polyethylene, polypropylene, polyamide, polyacrylonitrile, polyester, polycarbonate, and fluorosilicone. These materials are more likely to form hemispherical droplets on the surface of the boss, thereby facilitating the formation of regularly shaped dotting patterns.

[0052] This application does not impose any particular restrictions on the conveying device, as long as it can convey the silicon wafer above the hollow telescopic rod. For example, it can use... Figure 1 The illustrated inclined rod conveying method uses a conveying device with two sets of rollers: several horizontal rollers and several inclined rollers. The horizontal rollers allow the silicon wafer to lie flat on the surface and move with it, while the inclined rollers provide lateral protection to the silicon wafer, preventing it from slipping on the horizontal rollers. As the horizontal rollers rotate, the silicon wafer placed on the conveying device is moved to above the hollow telescopic rod. Besides the conveying method illustrated above, this application can also employ other conveying methods such as belt conveying. The hollow telescopic rod of this application can be positioned between the horizontal rollers, preventing contact with the horizontal rollers during extension and retraction.

[0053] Secondly, this application provides a method for testing the oxide layer of a silicon wafer, using the silicon wafer oxide layer testing apparatus described in any of the above embodiments, the method comprising:

[0054] Step A: Control the outlet of the hollow telescopic rod to release deionized water to the boss and form droplets at the boss;

[0055] Step B: Control the conveying device to convey the silicon wafer above the hollow telescopic rod and make the test surface of the silicon wafer face the droplet;

[0056] Step C: Control the hollow telescopic rod to move closer to the test surface of the silicon wafer, so that the droplets on the protrusions come into contact with the test surface and form a wetting pattern;

[0057] Step D: Control the imaging device to capture the dyed pattern and transmit the dyed pattern to the computing device;

[0058] Step E: Control the computing device to determine the oxide layer growth of the silicon wafer based on the size of the dye pattern.

[0059] The controller in this application can be a device with data processing and data storage capabilities, such as a computer, a programmable controller, etc., and this application does not have any particular limitations. The controller is communicatively connected to the actuating unit of the hollow telescopic rod, the valve of the hollow telescopic rod, the conveying device, the imaging device, and the computing device to realize the control of the above-mentioned units.

[0060] In step A, deionized water can be pre-flowed into the pipe of the hollow telescopic rod. The controller can control the opening time of the valve to release a certain amount of deionized water through the outlet to the boss, thereby forming droplets of controllable size.

[0061] In step B, after the silicon wafer is conveyed above the hollow telescopic rod, the controller can control the conveying device to stop operating, so that the silicon wafer stays above the hollow telescopic rod for a period of time, for example, 0.5s to 3s, so that during the stay, the protrusion of the hollow telescopic rod moves closer to the test surface of the silicon wafer.

[0062] In step C, the controller moves the hollow telescopic rod closer to the test surface of the silicon wafer, so that the droplets on the protrusion come into contact with the test surface, while the protrusion does not come into contact with the test surface to protect the silicon wafer.

[0063] In step D, the imaging device can communicate with a computing device to send the image containing the décor pattern to the computing device. This application does not impose any particular limitation on the imaging device, as long as it can image and has data transmission capabilities. For example, it may include, but is not limited to, cameras, monitors, and video cameras.

[0064] In step E, the correspondence between the diameter of the dyeing pattern and the growth status of the oxide layer can be pre-stored in the computing device. For example, when the diameter of the dyeing pattern is less than D1, the corresponding oxide layer growth status is poor; when the diameter of the dyeing pattern is greater than or equal to D1 and less than D2, the corresponding oxide layer growth status is good; when the diameter of the dyeing pattern is greater than or equal to D2, the corresponding oxide layer growth status is excellent. Technicians can flexibly set the values ​​of D1 and D2 according to the actual oxide layer quality standards. The computing device in this application can be a device with data storage and processing capabilities, such as a computer, a programmable controller, etc., and this application does not have any particular limitations.

[0065] In one optional embodiment, the contact time between the droplet and the surface to be tested is 0.5 s to 2 s. The inventors have found that when the contact time is too short, the droplet cannot adequately wet the silicon wafer surface; when the contact time is too long, it hinders the improvement of testing efficiency. By controlling the contact time within the above range, it is beneficial to ensure sufficient contact between the droplet and the surface to be tested, while avoiding the problem of low testing efficiency caused by excessively long contact times.

[0066] In one optional implementation, the control computing device determines the oxide layer growth status of the silicon wafer based on the size of the dotting pattern, including:

[0067] The degree of hydrophilicity of the oxide layer is determined by comparing the size of the preset standard dyeing pattern with the size of the tested dyeing pattern.

[0068] This application allows the computing device to pre-store the dimensions of standard dyeing patterns, such as diameter, radius, and area. In this way, after acquiring the dyeing pattern, the computing device can compare the dimensions of the two, and determine the degree of hydrophilicity of the oxide layer based on the comparison result. This allows for a more accurate determination of the degree of hydrophilicity of the oxide layer, and thus, the determination of the growth status of the oxide layer.

[0069] The silicon wafer oxide layer testing method provided in this application utilizes a protrusion at the top of a hollow telescopic rod to support deionized water released from the outlet, forming droplets. The telescopic movement of the rod causes these droplets to contact the test surface of the silicon wafer, forming a wetting pattern. This wetting pattern is captured and transmitted to a computing device, which then determines the oxide layer growth status based on the pattern's size. Because this method uses droplets from the protrusion surface to form the wetting pattern from bottom to top, rather than dripping water from top to bottom onto the wafer surface, it eliminates the need to wait for water to spread, thus saving time spent waiting for droplet diffusion. Therefore, this method can quickly determine the oxide layer growth quality, improving the testing efficiency of silicon wafer oxide layer testing.

[0070] Example

[0071] The silicon wafer oxide layer testing apparatus, testing method, silicon wafer, and solar cell of this application will be further described below with reference to more specific embodiments.

[0072] Example 1

[0073] The silicon wafer oxide layer testing device uses a hollow polypropylene telescopic rod with a boss diameter of 1cm, and the boss is also made of polypropylene. Figure 1 As shown. The test process is as follows:

[0074] Deionized water is introduced into the tubing of the hollow telescopic rod. A controller then opens a valve, releasing a measured amount of deionized water through the outlet onto the surface of the boss, forming droplets with a thickness H2 of 5 mm. The controller controls a conveying device to transport the silicon wafer above the hollow telescopic rod, then stops the device, allowing the wafer to remain above the rod for 1 second. Simultaneously, the controller moves the hollow telescopic rod closer to the test surface of the silicon wafer. When the distance H1 between the top stop of the boss and the test surface is 4 mm, the movement stops, and the droplets on the boss surface contact the test surface. After 1 second of contact, a wetting pattern is formed. The controller controls an imaging device to capture the wetting pattern and transmits the image to a computing device. The computing device determines the oxide layer growth of the silicon wafer based on the size of the wetting pattern. The size of the wetting pattern (i.e., the diameter) and the total testing time for each silicon wafer are shown in Table 1.

[0075] Example 2

[0076] Except for the use of a hollow telescopic rod with a boss diameter of 1.5cm, and the corresponding adjustment of the single release amount of deionized water to adjust the droplet thickness H2 to 5.5mm, everything else is the same as in Example 1.

[0077] Example 3

[0078] Except for the use of a hollow telescopic rod with a boss diameter of 2cm, and the adjustment of the single release amount of deionized water to adjust the droplet thickness H2 to 6mm, the rest is the same as in Example 1.

[0079] Example 4

[0080] Except for adjusting the contact time between the droplet and the surface to be tested to 0.5s, everything else is the same as in Example 1.

[0081] Example 5

[0082] Except for adjusting the contact time between the droplet and the surface to be tested to 2 seconds, everything else is the same as in Example 1.

[0083] Table 1 Control parameters for Examples 1 to 5

[0084]

[0085] In Table 1, " / " indicates that no relevant control parameters exist.

[0086] Test methods and equipment:

[0087] Determining the growth status of the oxide layer:

[0088] When using a hollow telescopic rod with a boss diameter of 1cm, set the standard diameter of the dyeing pattern D1 to 1cm and D2 to 1.5cm; when using a hollow telescopic rod with a boss diameter of 1.5cm, set the standard diameter of the dyeing pattern D1 to 1.5cm and D2 to 2cm; when using a hollow telescopic rod with a boss diameter of 2cm, set the standard diameter of the dyeing pattern D1 to 2cm and D2 to 2.5cm.

[0089] If the diameter of the dyed pattern is less than D1, the corresponding oxide layer growth is poor; if the diameter of the dyed pattern is greater than or equal to D1 and less than D2, the corresponding oxide layer growth is good; if the diameter of the dyed pattern is greater than or equal to D2, the corresponding oxide layer growth is excellent.

[0090] Table 2 Data Analysis of Examples 1 to 5

[0091] Diameter of the dye pattern (cm) Degree of hydrophilicity of oxide layer Example 1 1.63 excellent Example 2 2.17 excellent Example 3 2.61 excellent Example 4 1.55 excellent Example 5 1.78 excellent

[0092] Referring to Table 1, it can be seen from Examples 1 to 5 that the total testing time for each silicon wafer oxide layer using the silicon wafer oxide layer testing method of this application is at least 1.5s and at most 2.5s. This shows that the silicon wafer oxide layer testing method of this application can significantly shorten the testing time, thereby improving testing efficiency.

[0093] Referring to Table 2, it can be seen from Examples 1 to 5 that by comparing with the standard diameter, the silicon wafer oxide layer testing method of this application can accurately determine the degree of hydrophilicity of the oxide layer. It is evident that the silicon wafer oxide layer testing method of this application can quantitatively classify the oxide layer growth status of each silicon wafer, thereby accurately determining the growth quality of the oxide layer.

[0094] As can be seen from Examples 1, 4 and 5, as the contact time between the droplet and the surface to be tested increases, the diameter of the wetting pattern also increases. It is evident that by controlling the contact time between the droplet and the surface to be tested within the scope of this application, it is beneficial for the droplet to make full contact with the surface to be tested, so that the formed wetting pattern can be used to accurately determine the growth quality of the oxide layer.

[0095] The above provides a detailed description of a silicon wafer oxide layer testing device, testing method, silicon wafer, and solar cell disclosed in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the technical solutions and core inventive points of the embodiments of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A silicon wafer oxide layer testing device, characterized in that, The testing apparatus includes: A hollow telescopic rod, the top of which has a liquid outlet and a boss, the boss being used to support deionized water released from the liquid outlet and form droplets; A conveying device configured to convey the silicon wafer above the hollow telescopic rod; An imaging device configured to capture a wetting pattern formed after the droplet contacts the test surface of the silicon wafer; A computing device configured to receive a stained pattern image transmitted by the imaging device and determine the oxide layer growth status of the silicon wafer based on the size of the stained pattern.

2. The silicon wafer oxide layer testing device according to claim 1, characterized in that, The diameter of the boss is 0.5cm to 3cm.

3. The silicon wafer oxide layer testing device according to claim 1, characterized in that, The distance between the upper stop point of the boss and the test surface of the silicon wafer is H1, and the thickness of the droplet is H2, satisfying: 1mm≤H2-H1≤2mm.

4. The silicon wafer oxide layer testing device according to claim 1, characterized in that, The boss and the hollow telescopic rod are either an integral structure or separate structures, and the boss is made of a hydrophobic material.

5. The silicon wafer oxide layer testing apparatus according to any one of claims 1 to 4, characterized in that, The number of hollow telescopic rods is at least one, and when the number of hollow telescopic rods is multiple, the multiple hollow telescopic rods are arranged in an array.

6. The silicon wafer oxide layer testing apparatus according to any one of claims 1 to 4, characterized in that, The outer edge of the top of the boss is chamfered.

7. The silicon wafer oxide layer testing apparatus according to claim 4, characterized in that, The hydrophobic material includes at least one of polytetrafluoroethylene, polyethylene, polypropylene, polyamide, polyacrylonitrile, polyester, polycarbonate and fluorosilicone resin.

8. A method for testing the oxide layer of a silicon wafer, characterized in that, The test is performed using the silicon wafer oxide layer testing apparatus according to any one of claims 1 to 7, the method comprising: The hollow telescopic rod is controlled to release deionized water from its outlet to the boss and form droplets at the boss; The conveying device is controlled to convey the silicon wafer above the hollow telescopic rod, and the test surface of the silicon wafer is oriented toward the droplet; The hollow telescopic rod is controlled to move closer to the test surface of the silicon wafer, so that the droplets on the protrusion come into contact with the test surface and form a wetting pattern; The imaging device is controlled to capture the dyed pattern and transmit the dyed pattern to a computing device; The computing device is controlled to determine the oxide layer growth status of the silicon wafer based on the size of the dyeing pattern.

9. The test method according to claim 8, characterized in that, The contact time between the droplet and the surface to be tested is 0.5s to 2s.

10. The test method according to claim 8, characterized in that, The step of controlling the computing device to determine the oxide layer growth status of the silicon wafer based on the size of the dyeing pattern includes: The degree of hydrophilicity of the oxide layer is determined by comparing the size of the preset standard dyeing pattern with the size of the tested dyeing pattern.

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