Radiation dose evaluation method based on multi-level simulation

Abstract

The invention belongs to the technical field of anti-radiation circuit design, and discloses a multi-level simulation-based radiation dose evaluation method, which comprises the following steps of: modeling an integrated circuit device in a drive control circuit system to form a discrete device model by constructing a simulation model of the drive control circuit system; tCAD modeling is carried out on transistor devices in the discrete device model, radiation dose simulation analysis is achieved, total radiation dose output characteristics are obtained, the total radiation dose output characteristics are injected into the discrete device model and the drive control circuit system for simulation, and therefore failure radiation dose evaluation of the whole circuit of the drive control circuit system is obtained. According to the radiation dose evaluation method, the technical problem that effective auxiliary irradiation simulation of an integrated circuit device is difficult is solved, overall efficient radiation dose evaluation of a complex circuit is achieved, evaluation precision is effectively improved through hierarchical simulation, an auxiliary irradiation experiment is not needed, and cost is low.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of anti-radiation circuit design, and particularly relates to a radiation dose evaluation method based on multi-level simulation. BACKGROUND

[0002] In the field of nuclear industry, industrial robots are widely used in radiation environments, but radiation can cause irreversible effects on various electronic devices of the industrial robots, resulting in performance degradation or even functional failure of the electronic devices. Therefore, it is of great significance to study the effects of electronic devices in radiation environments and anti-radiation reinforcement technologies, and the accurate evaluation of the anti-radiation performance of electronic systems plays a key role.

[0003] For the anti-radiation evaluation of components or units of an electronic system, the traditional method is mainly based on irradiation experiments, but for the entire electronic system, this method is difficult and costly, and only a small amount of data can be obtained. In the prior art, some methods use anti-radiation performance evaluation based on circuit modeling simulation to realize the anti-radiation evaluation of electronic systems, but this simulation method is limited to transistor device modeling or simple circuit system analysis, and cannot realize the overall effective evaluation of complex circuits. SUMMARY

[0004] The technical problem to be solved by the application is to overcome the defect that the radiation dose evaluation method of the electronic system in the prior art cannot effectively evaluate the overall anti-radiation performance of complex circuits, thereby providing a radiation dose evaluation method based on multi-level simulation.

[0005] A radiation dose evaluation method based on multi-level simulation, comprising the following steps: A simulation model of a drive control circuit system is constructed, integrated circuit devices in the simulation model are modeled to form discrete device models, and the discrete device models are constructed by transistors and passive devices; TCAD radiation dose simulation is performed on the transistors in the discrete devices to obtain radiation total dose output characteristics of the transistors; The radiation total dose output characteristics of the transistors are injected into the corresponding discrete device models, total dose radiation simulation is performed to obtain radiation total dose output characteristics of the discrete device models, total dose radiation simulation is performed on the corresponding integrated circuit devices based on the radiation total dose output characteristics of the discrete device models to obtain failure radiation doses of the integrated circuit devices, and a simulation model of the drive control circuit system is established based on the total dose radiation simulation results of the integrated circuit devices, total dose radiation simulation is performed to obtain failure radiation doses of the drive control circuit system.

[0006] Further, the drive control circuit system comprises a power supply circuit and a gate drive circuit, the power supply circuit is used for providing direct current power supply of multiple voltages for the gate drive circuit, and the gate drive circuit is used for outputting three-phase drive signals. The power supply circuit comprises a first voltage reduction chip, a second voltage reduction chip and a voltage stabilizing chip connected in sequence, the first voltage reduction chip is used for reducing a first voltage to a second voltage, the second voltage reduction chip is used for reducing the second voltage to a third voltage, and the voltage stabilizing chip is used for reducing the third voltage to a fourth voltage. The gate drive circuit comprises a three-phase drive chip and a three-phase drive circuit connected in sequence, the three-phase drive chip drives a switch tube in the three-phase drive circuit, and the three-phase drive circuit outputs three-phase drive signals through three bridge arms composed of switch tubes.

[0007] Further, in the discrete device model, the transistor comprises a triode and a MOS tube, and the passive device comprises a resistor, an inductor, a capacitor and a diode.

[0008] Further, the TCAD radiation dose simulation is performed on the transistor in the discrete device to obtain the radiation total dose output characteristic of the transistor, and the method comprises the following steps: adding a trap energy level in a TCAD model of the triode to simulate the radiation dose effect; based on the TCAD model of the triode, a base voltage-base current curve and a base voltage-collector current curve under different radiation total doses are obtained through simulation, and the current gain of the triode under different radiation total doses is calculated based on the base voltage-collector current curve.

[0009] Further, the TCAD radiation dose simulation is performed on the transistor in the discrete device to obtain the radiation total dose output characteristic of the transistor, and the method comprises the following steps: different radiation total doses are applied to the MOS tube, a gate voltage-drain current curve of the MOS tube is obtained through simulation, and the threshold voltage of the MOS tube under different radiation total doses is calculated based on the gate voltage-drain current curve.

[0010] Further, the radiation total dose output characteristic of the transistor is injected into the corresponding discrete device model to perform total dose radiation simulation and obtain the radiation total dose output characteristic of the discrete device model, and the method comprises the following steps: the current gain distribution and the threshold voltage of the triode obtained through simulation are injected into the discrete device model, Monte Carlo analysis is performed through simulation, and a radiation total dose-output voltage curve of the discrete device model of the first voltage reduction chip, the second voltage reduction chip and the voltage stabilizing chip is obtained; the current gain distribution and the threshold voltage of the triode and the threshold voltage of the MOS tube obtained through simulation are injected into the discrete device model, and a three-phase drive circuit output waveform under different radiation total doses is obtained through simulation.

[0011] Further, based on the radiation total dose output characteristic of the discrete device model, total dose radiation simulation is performed on the corresponding integrated circuit device to obtain the failure radiation dose of the integrated circuit device, including the following method steps: taking the radiation total dose as a global variable and the output voltage as a sensitive parameter, injecting the radiation total dose-output voltage curve into the integrated circuit device model, performing direct current scanning simulation, obtaining the radiation total dose-output voltage curve of the integrated circuit device model of the first voltage reduction chip, the second voltage reduction chip and the voltage stabilizing chip, and analyzing to obtain the simulation failure dose; taking the radiation total dose as a global variable and injecting the threshold voltage of the MOS tube under different radiation total doses into the integrated circuit device model, performing transient simulation parameter scanning, obtaining the output voltage curve of the gate drive circuit under different radiation total doses, and analyzing to obtain the simulation failure dose.

[0012] Further, based on the total dose radiation simulation result of the integrated circuit device, a simulation model of the drive control circuit system is established, total dose radiation simulation is performed to obtain the failure radiation dose of the drive control circuit system, including the following method steps: constructing a simulation model of the drive control circuit system, taking the simulation failure dose as a scanning object, performing transient simulation parameter scanning, obtaining the output voltage curve of the simulation model of the drive control circuit system under different radiation total doses, and analyzing to obtain the failure radiation dose of the drive control circuit system.

[0013] Further, the drive control circuit system is used to drive a mechanical arm joint.

[0014] Beneficial effects: The application discloses a radiation dose evaluation method based on multi-level simulation, a simulation model of a drive control circuit system is constructed, integrated circuit devices in the drive control circuit system are modeled to form discrete device models, transistor devices in the discrete device models are modeled by TCAD and radiation dose simulation analysis is realized to obtain radiation total dose output characteristics, the radiation total dose output characteristics are injected into the discrete device models and the drive control circuit system for simulation, so that the failure radiation dose evaluation of the overall circuit of the drive control circuit system is obtained. The radiation dose evaluation method of the application overcomes the technical problem that integrated circuit devices are difficult to effectively assist simulation, realizes overall efficient radiation dose evaluation of complex circuits, effectively improves evaluation accuracy through hierarchical simulation, and does not need to perform assistive experiments, so the cost is low. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0016] Figure 1 The whole method step flow schematic block diagram of the present application; Figure 2 The three-phase drive chip connection circuit schematic diagram of the present application; Figure 3 The three-phase drive circuit schematic diagram of the present application; Figure 4 The first buck chip connection circuit schematic diagram of the present application; Figure 5 The second buck chip connection circuit schematic diagram of the present application; Figure 6 The voltage stabilizing chip connection circuit schematic diagram of the present application; Figure 7 The three-phase drive chip discrete device model schematic diagram of the present application; Figure 8 The first buck chip discrete device model schematic diagram of the present application; Figure 9 The second buck chip discrete device model schematic diagram of the present application; Figure 10 The voltage stabilizing chip discrete device model schematic diagram of the present application. DETAILED DESCRIPTION

[0017] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a number of different ways beyond the specific embodiments described and it is therefore contemplated to cover all such modifications as fall within the scope of the application. It is also to be understood that the application is not limited in its application to the details set forth in the description below and / or illustrated in the drawings. The application is capable of achieving its objects and providing its advantages with various changes and modifications apparent to those skilled in the art.

[0018] In the description of the present application, it should be understood that the terms "first", "second" are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0019] In this application, unless otherwise clearly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrated; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, it can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise clearly limited. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0020] Referring to Figure 1 The embodiment provides a radiation dose evaluation method based on multi-level simulation, comprising the following steps: Step S1: a simulation model of the drive circuit system is constructed, the integrated circuit device in the simulation model is modeled to form a discrete device model, and the discrete device model is constructed by transistors and passive devices; Step S2: TCAD radiation dose simulation is performed on the transistors in the discrete device to obtain the radiation total dose output characteristics of the transistors; Step S3.1: the radiation total dose output characteristics of the transistors are injected into the corresponding discrete device model, total dose radiation simulation is performed to obtain the radiation total dose output characteristics of the discrete device model; Step S3.2: based on the radiation total dose output characteristics of the discrete device model, total dose radiation simulation is performed on the corresponding integrated circuit device to obtain the failure radiation dose of the integrated circuit device; Step S3.3: based on the total dose radiation simulation result of the integrated circuit device, a simulation model of the drive circuit system is established, total dose radiation simulation is performed to obtain the failure radiation dose of the drive circuit system.

[0021] The embodiment provides a radiation dose evaluation method based on multi-level simulation. By constructing a simulation model of the drive circuit system, the integrated circuit device in the drive circuit system is modeled to form a discrete device model, the transistor device in the discrete device model is modeled by TCAD and radiation dose simulation analysis is realized to obtain radiation total dose output characteristics, the radiation total dose output characteristics are injected into the discrete device model and the drive circuit system for simulation, so that the failure radiation dose evaluation of the overall circuit of the drive circuit system is obtained. The radiation dose evaluation method of the method overcomes the technical problem that the integrated circuit device is difficult to effectively assist simulation, realizes the overall efficient radiation dose evaluation of the complex circuit, effectively improves the evaluation accuracy through hierarchical simulation, and does not need to perform auxiliary exposure experiment, and the cost is low.

[0022] Specifically, referring to Figures 2-6As shown, in the embodiment, the drive circuit system includes a power supply circuit and a gate drive circuit, the power supply circuit is used to provide the gate drive circuit with direct current power supply of multiple voltages, and the gate drive circuit is used to output three-phase drive signals. The power supply circuit includes a first voltage reduction chip, a second voltage reduction chip and a voltage stabilizing chip connected in sequence, the first voltage reduction chip is used to reduce a first voltage to a second voltage, the second voltage reduction chip is used to reduce the second voltage to a third voltage, and the voltage stabilizing chip is used to reduce the third voltage to a fourth voltage; as a preferred embodiment, the specific model of the first voltage reduction chip is TPS54360, which is used to reduce 48V direct current power supply to 20V, the specific model of the second voltage reduction chip is LM2576, which is used to reduce 20V to 5V, and the specific model of the voltage stabilizing chip is LM317, which is used to adjust 5V to 3.3V.

[0023] The gate drive circuit includes a three-phase drive chip and a three-phase drive circuit connected in sequence, the three-phase drive chip drives a switch tube in the three-phase drive circuit, and the three-phase drive circuit outputs three-phase drive signals through three bridge arms composed of switch tubes. As a preferred embodiment, the specific model of the three-phase drive chip is IR2163, and the three-phase drive circuit is composed of six NMOS tubes.

[0024] In the embodiment, the specific method for constructing the discrete device model includes: first, understanding the function and performance index of the chip circuit, and determining the key parameters such as input and output characteristics and gain; then, according to different functional modules in the chip circuit, selecting corresponding discrete devices to replace the active and passive elements therein, and considering the parameter range, voltage withstand value, power capacity and other characteristics of the discrete devices, to ensure that the selected devices can work normally under the same voltage, current and frequency conditions and meet the performance requirements of the circuit. Secondly, the DC working point of the chip circuit is analyzed to determine the static working state of each discrete device in the circuit. For active devices such as transistors, appropriate bias circuits are determined according to their input and output characteristic curves, so that they work in corresponding states such as amplification, saturation or cutoff, to simulate the DC working characteristics of the chip circuit. Finally, the discrete device model is established based on the above steps.

[0025] Reference Figures 7-10 As shown, in the embodiment, in the discrete device model, the transistor includes a transistor and a MOS tube, and the passive device includes a resistor, an inductor, a capacitor and a diode. Specifically, the first voltage reduction chip is composed of a transistor, a MOS tube, a resistor, an inductor and a diode, the second voltage reduction chip is composed of a transistor, a resistor, an inductor and a diode, the voltage stabilizing chip is composed of a transistor, a resistor and a capacitor, and the three-phase drive chip is composed of a transistor, a MOS tube, a resistor, a capacitor and a diode.

[0026] TCAD radiation dose simulation is performed on the transistor in the discrete device to obtain the radiation total dose output characteristics of the transistor, including the following method steps: adding a trap energy level in the TCAD model of the triode for simulating the radiation dose effect; based on the TCAD model of the triode, the base voltage-base current curve and the base voltage-collector current curve under different radiation total doses are simulated to obtain the current gain of the triode under different radiation total doses based on the base voltage-collector current curve. In this embodiment, a trap energy level is introduced in the SiO2 band gap in the insulating region of the triode model constructed by the TCAD software, the trap energy level density is 5×10 16 cm -3 , and the trap energy level position is 0.45V.

[0027] Specifically, the current gain degradation mechanism of the triode under total dose effect mainly manifests as the change of the base region current characteristics: one is the increase of the base current irradiation sensitivity, and the other is the decrease of the collector current. The base current of the NPN triode increases with the increase of the radiation total dose, and the base current of the PNP triode decreases with the increase of the radiation total dose. According to the probability density function of the current amplification factor β under different radiation total doses obtained from the base current and the collector current, it can be seen that the amplification factor β approximately obeys the normal distribution at each radiation total dose point.

[0028] A geometric model of the MOS tube is established in the TCAD, a trap energy level is added to the oxide layer of the MOSFET, the trap energy level position is 0.3V, and the capture cross section is 1e-17cm 2 .

[0029] TCAD radiation dose simulation is performed on the transistor in the discrete device to obtain the radiation total dose output characteristics of the transistor, including the following method steps: different radiation total doses are applied to the MOS tube, the gate voltage-drain current curve of the MOS tube is simulated to obtain the threshold voltage of the MOS tube under different radiation total doses based on the gate voltage-drain current curve. In this embodiment, the change curve of the drain current with the gate voltage is simulated under each radiation total dose point by using cobalt-60 γ-ray irradiation, and it can be seen that the threshold voltage of the NMOS tube decreases with the increase of the total dose, and the threshold voltage of the PMOS tube increases with the increase of the irradiation total dose.

[0030] The radiation total dose output characteristics of the transistors are injected into the corresponding discrete device model, and the radiation total dose output characteristics of the discrete device model are obtained by radiation simulation, including the following method steps: injecting the simulated current gain distribution and threshold voltage of the triode into the discrete device model, performing Monte Carlo analysis simulation to obtain the radiation total dose-output voltage curve of the discrete device model of the first voltage reduction chip, the second voltage reduction chip and the voltage stabilizing chip; injecting the simulated current gain distribution and threshold voltage of the triode and the threshold voltage of the MOS tube into the discrete device model, and simulating to obtain the output waveform of the three-phase drive circuit under different radiation total doses.

[0031] Based on the radiation total dose output characteristics of the discrete device model, the radiation total dose simulation is performed on the corresponding integrated circuit device to obtain the failure radiation dose of the integrated circuit device, including the following method steps: taking the radiation total dose as a global variable and the output voltage as a sensitive parameter, injecting the radiation total dose-output voltage curve into the integrated circuit device model, performing direct current scanning simulation to obtain the radiation total dose-output voltage curve of the integrated circuit device model of the first voltage reduction chip, the second voltage reduction chip and the voltage stabilizing chip, and analyzing to obtain the simulation failure dose; taking the radiation total dose as a global variable and injecting the threshold voltage of the MOS tube under different radiation total doses into the integrated circuit device model, performing transient simulation parameter scanning to obtain the output voltage curve of the gate drive circuit under different radiation total doses, and analyzing to obtain the simulation failure dose.

[0032] The simulation failure dose of the discrete device model is obtained, the accuracy of the irradiation model is verified by the results of the component experiment, and further the weak devices of the system are obtained for subsequent optimization design.

[0033] In the embodiment, when the simulation failure dose is analyzed, the judgment conditions of the integrated circuit failure are respectively: the output voltage of the first voltage reduction chip <10V, the output voltage deviation of the second voltage reduction chip is more than ±20%, and the output voltage deviation of the voltage stabilizing chip is more than ±10%.

[0034] In the embodiment, simulation is performed in the discrete model to obtain the output voltage of the device under each dose point, and each point data is fitted to obtain a nonlinear function of the change of the chip output voltage with the irradiation dose. And using the ".Model function" in the SPICE language, corresponding statements are added to the chip model to inject the relationship between the output voltage and the irradiation dose into the model.

[0035] In the embodiment, the SPICE irradiation models of each part of the chip established by the radiation simulation results of the integrated circuit device are connected according to the circuit schematic diagram to establish a simulation model of the drive circuit system.

[0036] The simulation model of the drive circuit system is established based on the total dose radiation simulation result of the integrated circuit device, and the failure radiation dose of the drive circuit system is obtained by total dose radiation simulation, including the following method steps: constructing the simulation model of the drive circuit system, taking the simulation failure dose as the scanning object, performing transient simulation parameter scanning, obtaining the output voltage curve of the simulation model of the drive circuit system under different radiation total doses, and analyzing to obtain the failure radiation dose of the drive circuit system.

[0037] In the embodiment, the working state of the U-phase voltage waveform judgment circuit in the three-phase output of the gate drive circuit is judged, and when the output U-phase voltage waveform is completely distorted, it is determined that the current radiation total dose exceeds the simulation failure dose. In the embodiment, whether the distortion is complete is judged by the distortion rate, and when the distortion rate is greater than a preset threshold, it is determined that the distortion is complete.

[0038] As a preferred embodiment of the present embodiment, the drive circuit system is used to drive a mechanical arm joint.

[0039] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the technical features in the above embodiments are not described, but as long as the combinations of the technical features do not exist contradictions, they should be considered as the scope of the present application.

[0040] The above embodiments only express several embodiments of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent application. It should be noted that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the scope of the present application. Therefore, the scope of the patent of the present application should be subject to the appended claims.

Claims

1. A method for radiation dose assessment based on multi-level simulation, characterized in that, The method comprises the following steps: constructing a simulation model of the drive control circuit system, the integrated circuit device in the simulation model is modeled to form a discrete device model, and the discrete device model is constructed by transistors and passive devices; performing TCAD radiation dose simulation on the transistors in the discrete device to obtain the radiation total dose output characteristics of the transistors; injecting the radiation total dose output characteristics of the transistors into the corresponding discrete device model to perform total dose radiation simulation to obtain the radiation total dose output characteristics of the discrete device model; based on the radiation total dose output characteristics of the discrete device model, performing total dose radiation simulation on the corresponding integrated circuit device to obtain the failure radiation dose of the integrated circuit device; based on the total dose radiation simulation result of the integrated circuit device, establishing a simulation model of the drive control circuit system, and performing total dose radiation simulation to obtain the failure radiation dose of the drive control circuit system.

2. The radiation dose evaluation method based on multi-level simulation according to claim 1, wherein the drive control circuit system comprises a power supply circuit and a gate drive circuit, the power supply circuit is used to provide direct current power supply of multiple voltages for the gate drive circuit, and the gate drive circuit is used to output three-phase drive signals. The power supply circuit comprises a first voltage reduction chip, a second voltage reduction chip and a voltage stabilizing chip connected in sequence, the first voltage reduction chip is used to reduce a first voltage to a second voltage, the second voltage reduction chip is used to reduce the second voltage to a third voltage, and the voltage stabilizing chip is used to reduce the third voltage to a fourth voltage. The gate drive circuit comprises a three-phase drive chip and a three-phase drive circuit connected in sequence, the three-phase drive chip drives a switch tube in the three-phase drive circuit, and the three-phase drive circuit outputs three-phase drive signals through three bridge arms composed of switch tubes. In the discrete device model, the transistors comprise transistors and MOS tubes, and the passive devices comprise resistors, inductors, capacitors and diodes.

3. The method of claim 1, wherein, The TCAD radiation dose simulation on the transistors in the discrete device to obtain the radiation total dose output characteristics of the transistors comprises the following method steps: adding a trap energy level in the TCAD model of the transistor to simulate the radiation dose effect; 4. The method of claim 1, wherein, based on the TCAD model of the transistor, the base voltage-base current curve and the base voltage-collector current curve under different radiation total doses are simulated, and the current gain of the transistor under different radiation total doses is calculated based on the base voltage-collector current curve. The TCAD radiation dose simulation on the transistors in the discrete device to obtain the radiation total dose output characteristics of the transistors comprises the following method steps: applying different radiation total doses to the MOS tube, simulating the gate voltage-drain current curve of the MOS tube, and calculating the threshold voltage of the MOS tube under different radiation total doses based on the gate voltage-drain current curve.

5. The method of claim 1, wherein, ​ 6. The method of claim 1, wherein, The radiation total dose output characteristics of the transistor are injected into the corresponding discrete device model, and the radiation total dose simulation is performed to obtain the radiation total dose output characteristics of the discrete device model, including the following method steps: injecting the simulated current gain distribution and threshold voltage of the triode into the discrete device model, performing Monte Carlo analysis simulation to obtain the radiation total dose-output voltage curve of the discrete device model of the first voltage reduction chip, the second voltage reduction chip and the voltage stabilizing chip; injecting the simulated current gain distribution and threshold voltage of the triode and the threshold voltage of the MOS tube into the discrete device model, and simulating to obtain the output waveform of the three-phase drive circuit under different radiation total doses.

7. The method of claim 1, wherein, Based on the radiation total dose output characteristics of the discrete device model, the radiation total dose simulation is performed on the corresponding integrated circuit device to obtain the failure radiation dose of the integrated circuit device, including the following method steps: taking the radiation total dose as a global variable and the output voltage as a sensitive parameter, injecting the radiation total dose-output voltage curve into the integrated circuit device model, performing direct current scanning simulation to obtain the radiation total dose-output voltage curve of the integrated circuit device model of the first voltage reduction chip, the second voltage reduction chip and the voltage stabilizing chip, and analyzing to obtain the simulation failure dose; taking the radiation total dose as a global variable, injecting the threshold voltage of the MOS tube under different radiation total doses into the integrated circuit device model, performing transient simulation parameter scanning to obtain the output voltage curve of the gate drive circuit under different radiation total doses, and analyzing to obtain the simulation failure dose.

8. The method of claim 1, wherein, Based on the radiation total dose simulation result of the integrated circuit device, a simulation model of the drive control circuit system is established, and the radiation total dose simulation is performed to obtain the failure radiation dose of the drive control circuit system, including the following method steps: constructing the simulation model of the drive control circuit system, taking the simulation failure dose as a scanning object, performing transient simulation parameter scanning to obtain the output voltage curve of the simulation model of the drive control circuit system under different radiation total doses, and analyzing to obtain the failure radiation dose of the drive control circuit system.

9. The method of claim 1, wherein, The drive control circuit system is used for driving a mechanical arm joint.

Images