Power module, motor controller and vehicle

Abstract

The invention relates to the technical field of new energy automobile electric drive, and discloses a power module, a motor controller and a vehicle. The power module comprises a mounting base and is provided with three half-bridge units, and each half-bridge unit is composed of an upper bridge arm mechanism and a lower bridge arm mechanism which are connected in series. The upper bridge arm mechanism is provided with an IGBT transistor and a silicon carbide MOSFET chip in parallel, and the IGBT transistor and the silicon carbide MOSFET chip are connected with a grid electrode through a first signal terminal, a second signal terminal and a binding line to achieve independent control. The lower bridge arm mechanism is provided with an IGBT transistor chip and a silicon carbide MOSFET chip in parallel, and the IGBT transistor chip and the silicon carbide MOSFET chip are connected with a grid electrode through a third signal terminal, a fourth signal terminal and a binding line respectively, so that independent control is achieved. Under the condition that the key performance of the electric drive system is not obviously reduced, the power module performance, the cost and the supply chain stability are effectively balanced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electric drive technology of new energy vehicles, and in particular to a power module, a motor controller and a vehicle. BACKGROUND

[0002] With the transformation of global energy structure and the increasingly stringent requirements of environmental protection, the new energy vehicle industry has experienced explosive growth. As the "heart" of new energy vehicles, the performance of the electric drive system directly determines the reliability of the whole vehicle. The main drive inverter is a key component of the electric drive system, and its core function is to accurately convert the high-voltage direct current (DC) output by the power battery into multi-phase alternating current (AC) required by the driving motor, so as to control the torque and speed of the motor. In this process of electric energy conversion, the performance of power semiconductor devices is the key factor that determines the efficiency, power density and cost ceiling of the inverter and the entire electric drive system.

[0003] In the prior art, silicon-based (Si-based) insulated gate bipolar transistors (IGBT) have been mainly used as core power switching devices in new energy vehicle main drive inverters for a long time. IGBT technology is mature, the industry chain is perfect, and it has the advantages of relatively low cost, strong current carrying capacity, high technical reliability, etc., and has been widely used, supporting the preliminary development of the new energy vehicle market. However, due to the physical properties of silicon material itself, the performance of silicon-based IGBT devices has gradually approached its theoretical limit. Its more obvious shortcomings are large switching loss and low switching frequency, which directly limits the further improvement of the efficiency of the inverter system. At the same time, in order to effectively dissipate the large amount of heat generated during operation, IGBT-based inverters often need to be equipped with a large and complex heat dissipation system, which not only increases the weight and cost of the system, but also makes it difficult to make breakthrough progress in the overall power density and compactness of the electric drive system, which is contrary to the development trend of vehicle lightweight and integration.

[0004] In order to overcome the above limitations of silicon-based IGBT, the industry has begun to focus on the third-generation wide-bandgap semiconductor material represented by silicon carbide (SiC). SiC material has a wider band gap, higher thermal conductivity and higher electron saturation rate than silicon. Compared with silicon-based IGBT, MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices based on SiC material exhibit revolutionary performance advantages: their switching loss can be reduced by more than 80%, their switching frequency can be increased by several times, and their on-resistance is extremely low. The application of SiC MOSFET in the main drive inverter can significantly improve the operating efficiency of the inverter in the entire operating range.

[0005] However, although SiC MOSFETs have great advantages in performance, the crystal growth rate of SiC material is slow, the growth conditions are extremely harsh, and defects such as microtubules and dislocations are easily generated in the crystal, resulting in a long-term low yield of high-quality and large-size substrates. This bottleneck in the process directly leads to high manufacturing costs of SiC MOSFET chips, and the price is much higher than that of silicon-based IGBT devices of the same specification. In addition, the complex production process also limits the overall production capacity of SiC substrates and chips, making it difficult to keep up with the massive demand brought about by the rapid growth of the new energy vehicle market.

[0006] Therefore, how to effectively balance the performance, cost and supply chain stability of semiconductor power modules without significantly sacrificing key performance indicators of the electric drive system has become a technical problem to be solved in the field. SUMMARY

[0007] The main purpose of the present application is to provide a power module, a motor controller and a vehicle, which aims to effectively balance the performance, cost and supply chain stability of semiconductor power modules without significantly sacrificing key performance indicators of the electric drive system.

[0008] In order to achieve the above-mentioned purpose, the present application provides a power module, comprising a mounting base, three half-bridge units are arranged on the mounting base, the half-bridge unit comprises an upper bridge arm mechanism and a lower bridge arm mechanism, the upper bridge arm mechanism and the lower bridge arm mechanism are connected in series to form a half-bridge structure; The upper bridge arm mechanism comprises an upper bridge arm IGBT transistor and a silicon carbide MOSFET chip arranged in parallel; the upper bridge arm mechanism further comprises an upper bridge arm IGBT transistor gate first signal terminal and an upper bridge arm silicon carbide MOSFET gate second signal terminal, the gate of the upper bridge arm IGBT transistor is connected to the first signal terminal through a binding wire, and the gate of the upper bridge arm silicon carbide MOSFET is connected to the second signal terminal through a binding wire, so as to realize independent control of the two chips; The lower bridge arm mechanism comprises an IGBT transistor chip and a silicon carbide MOSFET chip arranged in parallel; the lower bridge arm mechanism further comprises a lower bridge arm IGBT transistor gate signal terminal and a lower bridge arm silicon carbide MOSFET gate fourth signal terminal, the gate of the lower bridge arm IGBT transistor is connected to the third signal terminal through a binding wire, and the gate of the lower bridge arm silicon carbide MOSFET is connected to the fourth signal terminal through a binding wire, so as to realize independent control of the two chips.

[0009] In an embodiment of the present application, the upper bridge arm mechanism comprises two upper bridge arm IGBT transistors and four upper bridge arm silicon carbide MOSFET chips arranged in parallel; the lower bridge arm mechanism comprises two lower bridge arm IGBT transistor chips and four lower bridge arm silicon carbide MOSFET chips arranged in parallel.

[0010] In an embodiment of the present application, the layout of the upper bridge arm mechanism is symmetrically arranged with the layout of the lower bridge arm mechanism to ensure the uniformity of the chip heat and electrical distribution.

[0011] In an embodiment of the present application, the upper bridge arm mechanism further comprises an upper bridge arm common source-emitter signal terminal, the emitter of the upper bridge arm IGBT transistor and the source of the silicon carbide MOSFET chip are commonly connected to the upper bridge arm common source-emitter signal terminal and an alternating current power terminal.

[0012] In an embodiment of the present application, the half-bridge unit further comprises a copper-clad ceramic substrate, the copper-clad ceramic substrate is attached to the mounting base, and the upper bridge arm IGBT transistor, the lower bridge arm IGBT transistor chip, and the upper bridge arm silicon carbide MOSFET chip and the lower bridge arm silicon carbide MOSFET chip are all welded on the copper-clad ceramic substrate.

[0013] In an embodiment of the present application, the power module further comprises a direct current positive power terminal and a direct current negative power terminal; wherein the direct current positive power terminal is connected to the collector of the upper bridge arm IGBT transistor and the drain of the upper bridge arm silicon carbide MOSFET chip; and the direct current negative power terminal is connected to the emitter of the lower bridge arm IGBT transistor chip and the source of the lower bridge arm silicon carbide MOSFET chip.

[0014] In an embodiment of the present application, the copper-clad ceramic substrate is fixed on the mounting base by a welding, silver sintering or copper sintering process.

[0015] The present application also discloses a motor controller, which comprises the power module according to any one of the above.

[0016] The present application also discloses a vehicle, which comprises the motor controller according to the above.

[0017] By adopting the above technical solution, the number of silicon carbide MOSFET chips can be reduced while ensuring the efficiency and peak power of the controller, the cost of the power module is reduced, the upper and lower bridge arm layout is symmetrically arranged to effectively improve the heat and electrical consistency of the chips, the independent gate signal terminal design can realize flexible driving control strategy, and the reliability and service life of the power module are further improved. BRIEF DESCRIPTION OF DRAWINGS

[0018] The present application will be described in detail below with reference to specific embodiments and drawings, in which: Fig. 1 FIG. 1 is a schematic diagram of a half-bridge unit structure according to a first embodiment of the present application; Fig. 2This is a schematic diagram of the overall structure of the first embodiment of the present invention.

[0019] 10. Half-bridge unit; 100. Upper bridge arm mechanism; 101. Upper bridge arm IGBT transistor; 102. Silicon carbide MOSFET chip; 103. Upper bridge arm common source-emitter signal terminal; 104. First signal terminal; 105. Second signal terminal; 108. Copper-clad ceramic substrate; 200. Lower bridge arm mechanism; 201. Lower bridge arm IGBT transistor; 202. Lower bridge arm silicon carbide MOSFET; 204. Third signal terminal; 205. Fourth signal terminal; 260. DC positive power terminal; 270. DC negative power terminal; 280. AC power terminal. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the following specific embodiments are only used to explain the invention and do not constitute a limitation thereof.

[0021] like Figs. 1-2 As shown, in order to achieve the above objectives, the present invention proposes a power module, including a mounting base on which three half-bridge units 10 are disposed. Each half-bridge unit 10 includes an upper bridge arm mechanism 100 and a lower bridge arm mechanism 200, which are connected in series to form a half-bridge structure. The upper bridge arm mechanism 100 includes an upper bridge arm IGBT transistor 101 and a silicon carbide MOSFET chip 102 arranged in parallel; the upper bridge arm mechanism 100 also includes a first signal terminal 104 for the gate of the upper bridge arm IGBT transistor 101 and a second signal terminal 105 for the gate of the upper bridge arm silicon carbide MOSFET. The gate of the upper bridge arm IGBT transistor 101 is connected to the first signal terminal 104 through a bonding line, and the gate of the upper bridge arm silicon carbide MOSFET is connected to the second signal terminal 105 through a bonding line, so as to realize independent control of the two chips; The lower bridge arm mechanism 200 includes an IGBT transistor chip and a silicon carbide MOSFET chip 102 arranged in parallel; the lower bridge arm mechanism 200 also includes a gate signal terminal of the lower bridge arm IGBT transistor 201 and a fourth gate signal terminal 205 of the lower bridge arm silicon carbide MOSFET 202. The gate of the lower bridge arm IGBT transistor 201 is connected to the third signal terminal 204 through a bonding wire, and the gate of the lower bridge arm silicon carbide MOSFET 202 is connected to the fourth signal terminal 205 through a bonding wire, so as to realize independent control of the two chips.

[0022] Specifically, three half-bridge units 10 are fixedly arranged on the mounting base at equal intervals, each half-bridge unit 10 comprising an upper bridge arm mechanism 100 and a lower bridge arm mechanism 200 arranged in sequence along the width direction of the mounting base, and the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 are electrically connected through power connection terminals and signal connection terminals and are connected in series to form a half-bridge structure. The upper bridge arm mechanism 100 comprises two upper bridge arm IGBT transistors 101 arranged in parallel and four upper bridge arm silicon carbide MOSFET chips 102 arranged in parallel, the emitter of the upper bridge arm IGBT transistor 101 and the source of the upper bridge arm silicon carbide MOSFET chip 102 share an S / E pole signal terminal and are electrically connected to the S / E pole signal terminal through a copper binding wire, the collector of the upper bridge arm IGBT transistor 101 and the drain of the upper bridge arm silicon carbide MOSFET chip 102 share an AC power terminal and are electrically connected to the AC power terminal through a copper binding wire, the gate first signal terminal 104 of the upper bridge arm IGBT transistor 101 is connected to the gate of the upper bridge arm IGBT transistor 101 through an aluminum binding wire, and the gate second signal terminal 105 of the upper bridge arm silicon carbide MOSFET is connected to the gate of the upper bridge arm silicon carbide MOSFET chip 102 through an aluminum binding wire, thereby realizing independent control of the upper bridge arm IGBT transistor 101 and the upper bridge arm silicon carbide MOSFET chip 102.

[0023] The lower bridge arm mechanism 200 comprises two lower bridge arm IGBT transistor 201 chips arranged in parallel and four lower bridge arm silicon carbide MOSFET 202 chips 102 arranged in parallel, the emitter of the lower bridge arm IGBT transistor 201 chip and the source of the lower bridge arm silicon carbide MOSFET 202 chip 102 share an S / E pole signal terminal and are electrically connected to the S / E pole signal terminal through a copper binding wire, the collector of the lower bridge arm IGBT transistor 201 chip and the drain of the lower bridge arm silicon carbide MOSFET 202 chip 102 share an AC power terminal and are electrically connected to the AC power terminal through a copper binding wire, the gate signal terminal of the lower bridge arm IGBT transistor 201 is connected to the gate of the lower bridge arm IGBT transistor 201 chip through an aluminum binding wire, and the gate fourth signal terminal 205 of the lower bridge arm silicon carbide MOSFET 202 is connected to the gate of the lower bridge arm silicon carbide MOSFET 202 chip 102 through an aluminum binding wire, thereby realizing independent control of the lower bridge arm IGBT transistor 201 chip and the lower bridge arm silicon carbide MOSFET 202 chip 102.

[0024] Each half-bridge unit 10 is provided with a copper-clad ceramic substrate 108 fixed to the upper surface of the mounting base by a welding, silver sintering or copper sintering process, and all the upper bridge arm mechanisms 100 and the lower bridge arm mechanisms 200 are arranged in an upside-down symmetrical structure to ensure uniformity of the heat distribution and current distribution of the chips, the power loop is interconnected by copper binding wires, aluminum binding wires or copper clip welding, the signal loop is connected in series by aluminum binding wires, and the whole half-bridge unit 10 is subjected to insulation and protection treatment by an insulating medium pouring or plastic packaging process.

[0025] By adopting the technical scheme, the number of silicon carbide MOSFET chips 102 can be reduced while ensuring the efficiency and peak power of the controller, the cost of the power module is reduced, the symmetrical layout of the upper and lower bridge arms can effectively improve the heat and electrical consistency of the chips, the independent gate signal terminal design can realize a flexible driving control strategy, and the reliability and service life of the power module are further improved.

[0026] In an embodiment of the present application, the upper bridge arm mechanism 100 includes two upper bridge arm IGBT transistors 101 and four upper bridge arm silicon carbide MOSFET chips 102 arranged in parallel; and the lower bridge arm mechanism 200 includes two lower bridge arm IGBT transistor 201 chips and four lower bridge arm silicon carbide MOSFET 202 chips 102 arranged in parallel.

[0027] Specifically, the mounting base is fixedly provided with a half-bridge unit 10, the half-bridge unit 10 includes an upper bridge arm mechanism 100 and a lower bridge arm mechanism 200, the upper bridge arm mechanism 100 includes two upper bridge arm IGBT transistors 101 and four upper bridge arm silicon carbide MOSFET chips 102 arranged in parallel, the emitters of the two upper bridge arm IGBT transistors 101 are respectively connected to the sources of the four upper bridge arm silicon carbide MOSFET chips 102 through copper binding wires and share an S / E signal terminal, the collectors of the two upper bridge arm IGBT transistors 101 are respectively connected to the drains of the four upper bridge arm silicon carbide MOSFET chips 102 through copper binding wires and share an AC power terminal, the gates of the two upper bridge arm IGBT transistors 101 are respectively connected to an upper bridge arm IGBT transistor 101 gate first signal terminal 104 through aluminum binding wires, and the gates of the four upper bridge arm silicon carbide MOSFET chips 102 are respectively connected to an upper bridge arm silicon carbide MOSFET gate second signal terminal 105 through aluminum binding wires.

[0028] The lower bridge arm mechanism 200 includes two lower bridge arm IGBT transistor 201 chips and four lower bridge arm silicon carbide MOSFET 202 chips 102 arranged in parallel, the emitters of the two lower bridge arm IGBT transistor 201 chips are respectively connected to the sources of the four lower bridge arm silicon carbide MOSFET 202 chips 102 through copper binding wires and share an S / E pole signal terminal, the collectors of the two lower bridge arm IGBT transistor 201 chips are respectively connected to the drains of the four lower bridge arm silicon carbide MOSFET 202 chips 102 through copper binding wires and share an AC power terminal, the gates of the two lower bridge arm IGBT transistor 201 chips are respectively connected to a lower bridge arm IGBT transistor 201 gate signal terminal through aluminum binding wires, and the gates of the four lower bridge arm silicon carbide MOSFET 202 chips 102 are respectively connected to a lower bridge arm silicon carbide MOSFET 202 gate fourth signal terminal 205 through aluminum binding wires.

[0029] By adopting the technical scheme, high-efficiency parallel work of two IGBT transistors and four silicon carbide MOSFET chips 102 in the same bridge arm can be realized, the current carrying capacity and switching performance of the power module are ensured, the number of silicon carbide MOSFET chips 102 used is reduced, the manufacturing cost is reduced, and the overall thermal balance and operation reliability are improved.

[0030] In an embodiment of the present application, the layout of the upper bridge arm mechanism 100 is symmetrically arranged with the layout of the lower bridge arm mechanism 200, so as to ensure the uniformity of the chip heat and electric distribution.

[0031] Specifically, the mounting base is fixedly provided with a half-bridge unit 10, the half-bridge unit 10 includes an upper bridge arm mechanism 100 and a lower bridge arm mechanism 200, the layout of the upper bridge arm mechanism 100 is symmetrically arranged with the layout of the lower bridge arm mechanism 200, the arrangement position, the power connection terminal and the signal connection terminal of two upper bridge arm IGBT transistors 101 in the upper bridge arm mechanism 100 on a copper clad ceramic substrate 108 are mutually mirror corresponding with the arrangement position, the power connection terminal and the signal connection terminal of two lower bridge arm IGBT transistor 201 chips and four lower bridge arm silicon carbide MOSFET 202 chips 102 on the copper clad ceramic substrate 108, the upper bridge arm S / E pole signal terminal and the lower bridge arm S / E pole signal terminal are symmetrically arranged on the mounting base, the upper bridge arm AC power terminal and the lower bridge arm AC power terminal are symmetrically arranged on the mounting base, the gate first signal terminal 104 of the upper bridge arm IGBT transistor 101 and the gate signal terminal of the lower bridge arm IGBT transistor 201, the gate second signal terminal 105 of the upper bridge arm silicon carbide MOSFET and the gate fourth signal terminal 205 of the lower bridge arm silicon carbide MOSFET 202 are symmetrically arranged along the same path length on the copper clad ceramic substrate 108, the number, the diameter and the direction of the power loop copper binding wire and the signal loop aluminum binding wire of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 are consistent, so that strict symmetry is formed in the mechanical structure, the conductive path and the heat dissipation path.

[0032] By using the above technical scheme, through the mirror image symmetric layout of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200, the heat distribution and the electric distribution of the chips in the working process of the power module are more uniform, the circulating current and the voltage imbalance are reduced, the thermal stress of the single chip is reduced, the current sharing capability of the parallel devices and the stability and reliability of the overall operation are improved.

[0033] In an embodiment of the present application, the upper bridge arm mechanism 100 further includes an upper bridge arm common source-emitter signal terminal 103, the emitter of the upper bridge arm IGBT transistor 101 and the source of the silicon carbide MOSFET chip 102 are commonly connected to the upper bridge arm common source-emitter signal terminal 103 and the AC power terminal 280.

[0034] Specifically, the mounting base is fixedly provided with a half-bridge unit 10, and the half-bridge unit 10 includes an upper bridge arm mechanism 100, the upper bridge arm mechanism 100 includes two upper bridge arm IGBT transistors 101 and four upper bridge arm silicon carbide MOSFET chips 102 which are arranged in parallel, and the upper bridge arm mechanism 100 further includes an upper bridge arm common source emitter signal terminal 103, the emitter of each upper bridge arm IGBT transistor 101 and the source of each upper bridge arm silicon carbide MOSFET chip 102 are respectively connected to the upper bridge arm common source emitter signal terminal 103 through copper binding wires, and meanwhile the emitter of each upper bridge arm IGBT transistor 101 and the source of each upper bridge arm silicon carbide MOSFET chip 102 are respectively connected to an alternating current power terminal 280 through copper binding wires, so as to realize the common output and power parallel connection of the upper bridge arm IGBT transistor 101 and the upper bridge arm silicon carbide MOSFET chip 102 at the emitter / source side.

[0035] By adopting the technical scheme, the upper bridge arm IGBT transistor 101 and the upper bridge arm silicon carbide MOSFET chip 102 can be turned on and turned off cooperatively at the same potential, the influence of the loop impedance difference at the emitter / source side on the parallel current distribution performance is reduced, and the current distribution uniformity and the overall operation stability of the power module are improved.

[0036] In an embodiment of the present application, the half-bridge unit 10 further includes a copper-clad ceramic substrate 108, the copper-clad ceramic substrate 108 is attached to the mounting base, and the upper bridge arm IGBT transistor 101, the lower bridge arm IGBT transistor 201 chip and the upper bridge arm silicon carbide MOSFET chip 102 and the lower bridge arm silicon carbide MOSFET 202 chip 102 are all welded on the copper-clad ceramic substrate 108.

[0037] Specifically, the mounting base is fixedly provided with a half-bridge unit 10, the half-bridge unit 10 includes a copper-clad ceramic substrate 108, the copper-clad ceramic substrate 108 is attached to the upper surface of the mounting base through a heat-conducting interface material, and a upper bridge arm IGBT transistor 101, a lower bridge arm IGBT transistor 201 chip, a upper bridge arm silicon carbide MOSFET chip 102 and a lower bridge arm silicon carbide MOSFET 202 chip 102 are fixedly arranged on the metalized copper layer of the copper-clad ceramic substrate 108 according to circuit layout, the upper bridge arm IGBT transistor 101, the lower bridge arm IGBT transistor 201 chip, the upper bridge arm silicon carbide MOSFET chip 102 and the lower bridge arm silicon carbide MOSFET 202 chip 102 are all fixed on the surface of the metalized copper layer of the copper-clad ceramic substrate 108 through a solder reflow welding, silver sintering or copper sintering process, and the bottom surface of the chip forms a reliable conductive and heat-conductive connection with the metalized copper layer of the copper-clad ceramic substrate 108, and the heat-conducting interface material between the copper-clad ceramic substrate 108 and the mounting base is uniform in thickness and a predetermined pressure is applied during the attachment process to ensure that the thermal resistance of the heat dissipation path is minimized.

[0038] The above technical solution can make the upper bridge arm IGBT transistor 101, the lower bridge arm IGBT transistor 201 chip, the upper bridge arm silicon carbide MOSFET chip 102 and the lower bridge arm silicon carbide MOSFET 202 chip 102 work under the same heat dissipation conditions and mechanical support conditions, improve the chip heat dissipation efficiency and electrical connection reliability, and thus improve the stability and life of the power module in high-power density applications.

[0039] In an embodiment of the present application, the power module further includes a direct current positive power terminal 260 and a direct current negative power terminal 270; wherein the direct current positive power terminal 260 is connected to the collector of the upper bridge arm IGBT transistor 101 and the drain of the upper bridge arm silicon carbide MOSFET chip 102; and the direct current negative power terminal 270 is connected to the emitter of the lower bridge arm IGBT transistor 201 chip and the source of the lower bridge arm silicon carbide MOSFET 202 chip 102.

[0040] Specifically, the mounting base is fixedly provided with a half-bridge unit 10, the half-bridge unit 10 includes a direct current positive power terminal 260 and a direct current negative power terminal 270, the direct current positive power terminal 260 is connected to the collector of two upper bridge arm IGBT transistors 101 and the drain of four upper bridge arm silicon carbide MOSFET chips 102 through copper binding wires respectively, so that the upper bridge arm IGBT transistor 101 and the upper bridge arm silicon carbide MOSFET chip 102 are connected in parallel at the high-voltage direct current positive side; the direct current negative power terminal 270 is connected to the emitter of two lower bridge arm IGBT transistor 201 chips and the source of four lower bridge arm silicon carbide MOSFET 202 chips 102 through copper binding wires respectively, so that the lower bridge arm IGBT transistor 201 chip and the lower bridge arm silicon carbide MOSFET 202 chip 102 are connected in parallel at the high-voltage direct current negative side; the direct current positive power terminal 260 and the direct current negative power terminal 270 are both connected to the copper clad ceramic substrate 108 on the mounting base in a plane busbar structure or a thick copper lead structure, and a conductive interface material is coated at the connection position to reduce the contact resistance.

[0041] By adopting the technical scheme, reliable connection of the upper bridge arm mechanism 100 and the lower bridge arm mechanism 200 with low impedance and large current carrying capacity at the direct current high-voltage side and the direct current low-voltage side can be ensured, power loss and heat generation are reduced, and current balance and long-term reliability of the power module under high-power operating conditions are improved.

[0042] In an embodiment of the present application, the copper clad ceramic substrate 108 is fixed on the mounting base by welding, silver sintering or copper sintering process.

[0043] Specifically, the mounting base is fixedly provided with a copper clad ceramic substrate 108, a heat conduction interface material is arranged between the bottom surface of the copper clad ceramic substrate 108 and the upper surface of the mounting base, and the copper clad ceramic substrate 108 is fixed on the upper surface of the mounting base by any one of welding process, silver sintering process or copper sintering process, wherein the welding process can realize metallurgical bonding between the copper clad ceramic substrate 108 and the metal surface of the mounting base in a brazing or reflow soldering manner, the silver sintering process forms a high-thermal-conductivity and high-strength connection layer by uniformly coating silver paste on the bottom surface of the copper clad ceramic substrate 108 and sintering under specific temperature and pressure, and the copper sintering process realizes a dense connection layer by arranging copper powder or copper sheet on the bottom surface of the copper clad ceramic substrate 108 and sintering under a protective atmosphere, all the process modes ensure low thermal resistance and high mechanical strength between the copper clad ceramic substrate 108 and the mounting base.

[0044] By adopting the technical scheme, reliable heat conduction and mechanical connection between the copper clad ceramic substrate 108 and the mounting base can be ensured, and stable operation and long service life of the half-bridge unit 10 under high power density and high heat load conditions can be ensured.

[0045] The application also discloses a motor controller comprising the power module according to any one of the above.

[0046] The application also discloses a vehicle comprising the motor controller according to the above.

[0047] The above merely describes the preferred embodiments of the present application, and is not intended to limit the patent scope of the present application. Any equivalent structural transformation, direct / indirect application in other related technical fields, or the like, which is made under the inventive concept of the present application and based on the content of the present application specification and drawings, is included in the patent protection scope of the present application.

Claims

1. A power module, comprising a mounting base on which three half-bridge units are disposed, each half-bridge unit comprising an upper bridge arm mechanism and a lower bridge arm mechanism, the upper bridge arm mechanism and the lower bridge arm mechanism being connected in series to form a half-bridge structure; characterized in that: The upper bridge arm mechanism includes an upper bridge arm IGBT transistor and a silicon carbide MOSFET chip arranged in parallel; the upper bridge arm mechanism also includes a first signal terminal and a second signal terminal, the gate of the upper bridge arm IGBT transistor is connected to the first signal terminal through a bonding line, and the gate of the upper bridge arm silicon carbide MOSFET is connected to the second signal terminal through a bonding line, so as to realize independent control of the two chips; The lower bridge arm mechanism includes an IGBT transistor chip and a silicon carbide MOSFET chip arranged in parallel; the lower bridge arm mechanism also includes a third signal terminal and a fourth signal terminal, the gate of the lower bridge arm IGBT transistor is connected to the third signal terminal through a bonding wire, and the gate of the lower bridge arm silicon carbide MOSFET is connected to the fourth signal terminal through a bonding wire, so as to realize independent control of the two chips.

2. The power module as described in claim 1, characterized in that, The upper bridge arm mechanism includes two upper bridge arm IGBT transistors and four upper bridge arm silicon carbide MOSFET chips connected in parallel; the lower bridge arm mechanism includes two lower bridge arm IGBT transistor chips and four lower bridge arm silicon carbide MOSFET chips connected in parallel.

3. The power module as described in claim 1, characterized in that, The layout of the upper bridge arm mechanism is symmetrical to that of the lower bridge arm mechanism to ensure the uniformity of heat and electrical distribution of the chip.

4. The power module as described in claim 1, characterized in that, The upper bridge arm mechanism also includes a common source-emitter signal terminal for the upper bridge arm. The emitter of the upper bridge arm IGBT transistor and the source of the silicon carbide MOSFET chip are connected to the common source-emitter signal terminal and the AC power terminal for the upper bridge arm.

5. The power module as described in claim 1, characterized in that, The half-bridge unit also includes a copper-clad ceramic substrate, which is attached to the mounting base. The upper bridge arm IGBT transistor, the lower bridge arm IGBT transistor chip, the upper bridge arm silicon carbide MOSFET chip, and the lower bridge arm silicon carbide MOSFET chip are all soldered onto the copper-clad ceramic substrate.

6. The power module as described in claim 1, characterized in that, The power module further includes a DC positive power terminal and a DC negative power terminal; wherein, the DC positive power terminal is connected to the collector of the upper bridge arm IGBT transistor and the drain of the upper bridge arm silicon carbide MOSFET chip; the DC negative power terminal is connected to the emitter of the lower bridge arm IGBT transistor chip and the source of the lower bridge arm silicon carbide MOSFET chip.

7. The power module as described in claim 5, characterized in that, The copper-clad ceramic substrate is fixed to the mounting base by welding, silver sintering, or copper sintering processes.

8. A motor controller, characterized in that, The motor controller includes a power module as described in any one of claims 1 to 7.

9. A vehicle, characterized in that, The vehicle includes the motor controller as described in claim 8.

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