All-nitride integrated power module, preparation method thereof and electric appliance comprising all-nitride integrated power module

Abstract

The invention provides an all-nitride integrated power module, a preparation method thereof and an electric appliance comprising the all-nitride integrated power module, and particularly relates to the technical field of semiconductors. The all-nitride integrated power module comprises a substrate layer at the bottom and a plurality of gallium nitride devices located on the substrate layer. A device layer and an electrode layer are sequentially arranged on the gallium nitride device from bottom to top; the substrate layer is made of AlN, and the device layer is formed by an AlGaN / GaN heterojunction. AlN is used as a substrate and forms a homogeneous nitride system with the AlGaN / GaN heterojunction device layer, so that zero thermal mismatch is realized, and the mechanical strength and the structural stability are enhanced. The insulating AlN substrate is directly used as an isolating layer, so that the thermal resistance is reduced, and the heat dissipation efficiency is improved. As the semiconductor has no magnetic conductivity, the parasitic inductance can be ignored, and the horizontal device does not need to process interface resistance, so that the electrical loss is reduced. The AlN substrate enables the module to withstand voltage up to hundreds of kV, the bottom buffer layer is removed to prevent defects from capturing carriers, and the dynamic response characteristic and the switch stability are remarkably improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a full-nitride integrated power module, a preparation method thereof and an electric appliance comprising the same. BACKGROUND

[0002] Among the three core technologies of new energy vehicles, i.e. battery, motor and electric control, the electric control technology is a key component, and the power semiconductor module is the core of the electric control technology. With the continuous development of high-power density drivers, more and more stringent requirements are put forward for the power semiconductor module, which is specifically manifested as lower loss, higher switching speed, smaller size and higher reliability.

[0003] There are mainly two kinds of current mainstream power module technologies, one of which is a power module based on DBC (direct bonded copper) technology. The core of this technology is the process of directly bonding a copper foil to a ceramic substrate, which can achieve firm bonding between copper and ceramic through high-temperature eutectic reaction. The other mainstream technology is a power module based on IMS (insulated metal substrate). Its structural feature is that a layer of insulating layer (material is mostly high-heat-conducting epoxy resin, polyimide or ceramic filling material) and several hundred microns thick conductive copper foil are sequentially covered on a metal substrate (usually made of 1-3 mm aluminum or copper material).

[0004] However, the existing two kinds of power module technologies have problems that cannot be ignored. On the one hand, there is a problem of poor mechanical strength due to CTE (coefficient of thermal expansion) mismatch; on the other hand, due to the large thickness of the Si substrate and the insulating layer, the module has the defect of high thermal resistance.

[0005] In view of this, the present application is proposed. SUMMARY

[0006] The present application aims to provide a full-nitride integrated power module, a preparation method thereof and an electric appliance comprising the same, and aims to solve at least one of the above technical problems in the prior art.

[0007] In order to achieve the above-mentioned purpose of the present application, the following technical solutions are adopted: The first aspect of the present application provides a full-nitride integrated power module, comprising a substrate layer at the bottom and a plurality of gallium nitride devices located thereon; the gallium nitride devices are sequentially provided with a device layer and an electrode layer from the bottom to the top. The material of the substrate layer is AlN, and the device layer is formed by AlGaN / GaN heterojunction.

[0008] In some embodiments of the present application, the electrode layer comprises a source electrode, a gate electrode and a drain electrode.

[0009] In some embodiments of the present application, the substrate layer has a fish fin heat sink structure.

[0010] In some embodiments of the present application, the thickness of the substrate layer is 0.1-2mm. In some embodiments of the present application, in the device layer, the thickness of the AlGaN layer is 1-50nm, and the thickness of the GaN layer is 0.1-1μm.

[0011] The second aspect of the present application provides a preparation method of the all-nitride integrated power module. A GaN buffer layer and a device layer are prepared in sequence on a conductive silicon substrate by an epitaxial growth process; an electrode layer is formed on the surface of the device layer by a flow sheet lithography and metallization process; then the bottom conductive silicon substrate and the GaN buffer layer are removed to obtain the gallium nitride device. The gallium nitride device is bonded to the AlN substrate by a bonding process after surface activation treatment of the AlN substrate; finally, the gallium nitride device is electrically isolated to obtain the all-nitride integrated power module.

[0012] In some embodiments of the present application, the thickness of the GaN buffer layer is 1-6μm.

[0013] In some embodiments of the present application, the surface activation treatment process is: the AlN substrate is activated for 10-200s at 500-2000V by using plasma.

[0014] In some embodiments of the present application, the bonding method is low-temperature bonding.

[0015] In some embodiments of the present application, the low-temperature bonding is performed at 25-200℃.

[0016] In some embodiments of the present application, the low-temperature bonding further includes an annealing treatment after bonding.

[0017] In some embodiments of the present application, the annealing treatment is performed by passing a current of 1-100A through the interface after bonding to generate a temperature of <400℃.

[0018] In some embodiments of the present application, the electrical isolation method includes ion implantation or etching.

[0019] In some embodiments of the present application, in the ion implantation process, the energy is 20-500keV, and the ion concentration is 1E19-5E21 atoms / cm 3 .

[0020] The third aspect of the present application provides an electric appliance comprising the all-nitride integrated power module.

[0021] Compared with the prior art, the application has at least the following beneficial effects: The all-nitride integrated power module provided by the application forms a homogeneous nitride system with an AlN material substrate and an AlGaN / GaN heterojunction device layer to realize zero thermal mismatch to enhance mechanical strength and structural stability; directly uses an insulating AlN substrate as an isolation layer to save a traditional insulating layer, thereby reducing overall thermal resistance and improving heat dissipation efficiency; due to the semiconductor non-magnetic permeability characteristic, parasitic inductance can be ignored, and as a horizontal device, the AlGaN / GaN barrier layer and the AlN substrate interface resistance do not need to be additionally processed, thereby effectively reducing electrical loss; the excellent characteristics of the semi-insulating AlN substrate enable the module to actually achieve several hundred kV of ultra-high withstand voltage capability; and by removing the bottom buffer layer to avoid defect carrier trapping, dynamic response characteristics and switching stability are significantly improved.

[0022] The preparation method provided by the application completes GaN buffer layer, device layer growth and electrode layer preparation on the conductive silicon substrate first, and then removes the silicon substrate and the buffer layer, which not only takes advantage of the characteristics of the silicon substrate for easy epitaxial growth and wafer processing to ensure device preparation accuracy, but also avoids defect trapping by removing the buffer layer to optimize dynamic performance; after surface activation treatment of the AlN substrate, the gallium nitride device is bonded, which can enhance the interface bonding strength and stability, and the AlN substrate is directly used as the substrate and the isolation layer, which saves the additional preparation steps of the traditional insulating layer and the bottom buffer layer, thereby simplifying the process flow; finally, module integration is realized through electrical isolation treatment, the overall process not only ensures the landing of core performance advantages such as zero thermal mismatch and low resistance heat dissipation, but also reduces the influence of interface resistance and parasitic parameters, thereby providing reliable preparation guarantee for high withstand voltage and high stability of the module.

[0023] Due to the advantages of the all-nitride integrated power module, the electric appliance relying on the module has the structural characteristics of zero thermal mismatch and the optimized heat dissipation design, so that the electric appliance can maintain stable operation under high power working conditions and reduce the risk of failure caused by thermal stress; the characteristics of low parasitic inductance and low interface resistance reduce energy loss and improve the energy efficiency of the electric appliance; the several hundred kV of ultra-high withstand voltage capability expands the application range of the electric appliance in the high voltage field, so that it can be adapted to a wider range of power scenarios; and the excellent dynamic response characteristics make the electric appliance react more quickly and run more efficiently and stably during switching adjustment. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0025] Figure 1 A schematic diagram of the structure of an all-nitride integrated power module provided by the present invention; Figure 2 A schematic diagram of another all-nitride integrated power module provided by the present invention; Figure 3 The present invention provides a method for preparing an all-nitride integrated power module.

[0026] Key component markings: 100 - substrate layer; 200 - gallium nitride device; 220 - electrode layer; 240 - device layer. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0028] [All-nitride integrated power module] The first aspect of the present invention provides an all-nitride integrated power module, such as Figure 1 As shown, it includes a bottom substrate layer 100 and a plurality of gallium nitride devices 200 located thereon; the gallium nitride devices 200 are provided with a device layer 240 and an electrode layer 220 from bottom to top. The substrate layer 100 is made of AlN, and the device layer 240 is formed by an AlGaN / GaN heterojunction.

[0029] The substrate layer 100 is located at the bottom of the entire module and is the basic component supporting the module structure. Its material is AlN (aluminum nitride). This choice not only allows it to form a homogeneous nitride system with the AlGaN / GaN heterojunction device layer 240 of the gallium nitride device 200 above, laying the foundation for the module to achieve zero thermal mismatch, enhance mechanical strength and structural stability, but also allows it to directly function as an insulating layer, eliminating the need for a traditional insulating layer. At the same time, its semi-insulating properties give the module excellent withstand voltage capability, playing a key supporting role in improving the overall performance of the module.

[0030] In some embodiments of the present invention, the thickness of the substrate layer 100 is 0.1~2mm, which provides sufficient structural support for the entire module, ensuring mechanical stability during device integration and subsequent use, without increasing the overall volume and weight of the module due to excessive thickness. At the same time, a reasonable thickness can optimize the heat conduction path of the AlN substrate, effectively improving heat dissipation efficiency and avoiding local overheating in conjunction with its high thermal conductivity. In addition, a thickness of 0.1~2mm can fully utilize the insulating properties of AlN, ensuring that its withstand voltage capability as an isolation layer is stable and meets the standards, providing a structural basis for the module to achieve ultra-high withstand voltage of several hundred kV, thus balancing performance and practicality.

[0031] Electrode layer 220 is a key structure for realizing electrical signal and energy transmission, mainly composed of three parts: source, gate, and drain. The gate, as the control terminal, is responsible for regulating the on and off states of the device; the source and drain, as the current input and output terminals, are responsible for carrier transport. These three electrode layers work together to form good contact with the AlGaN / GaN heterojunction of device layer 240, precisely realizing the electrical control of the gallium nitride device 200, providing core support for the module's power conversion and control.

[0032] Device layer 240 is the core component of the gallium nitride device 200, enabling it to perform semiconductor functions. In the all-nitride integrated power module, it is responsible for the generation, transport, and regulation of charge carriers, providing fundamental support for the device's electrical performance. It is formed by an AlGaN / GaN heterojunction, where the AlGaN layer (aluminum gallium nitride layer) is located above the GaN layer (gallium nitride layer), and the two are tightly bonded to form a heterojunction interface. Due to the difference in band gaps and lattice constants between AlGaN and GaN, a two-dimensional electron gas channel is formed at the interface. This special structural relationship provides conditions for efficient carrier migration and also enables the device to achieve precise electrical characteristic regulation, working in conjunction with electrode layer 220 to complete signal and energy processing.

[0033] In some embodiments of the present invention, in the device layer 240, the thickness of the AlGaN layer is 1~50 nm, and the thickness of the GaN layer is 0.1~1 μm. Within this thickness range, the heterojunction performance can be fully optimized. The ultra-thin thickness (1~50 nm) of the AlGaN layer can efficiently induce high-density two-dimensional electron gas channels when forming a heterojunction with the GaN layer through the difference in their band gaps and lattice constants, while avoiding the problem of excessive lattice mismatch stress caused by excessive thickness; while the GaN layer thickness of 0.1~1 μm provides a stable transport substrate for the two-dimensional electron gas, ensuring both the smoothness of carrier migration and providing sufficient structural support for the device layer 240.

[0034] In other embodiments of the present invention, all-nitride integrated power modules, such as Figure 2 As shown, withFigure 1 The difference is that the substrate layer 100 has a fin heat sink structure, while the rest of the structure is the same as... Figure 1 The same applies. The fin-shaped heat sink structure used in substrate layer 100 significantly improves the module's heat dissipation performance. Its advantage lies in increasing the heat dissipation area on the substrate surface, expanding the contact area with air or heat dissipation medium, and accelerating the heat conduction rate. At the same time, the fin-shaped protrusion structure optimizes the airflow path, enhances the convective heat dissipation effect, and quickly dissipates the heat generated during module operation. This structural design effectively reduces thermal resistance without increasing the overall volume, ensuring the module's temperature stability under high-power conditions, and further improving operational reliability and lifespan.

[0035] The all-nitride integrated power module provided by this invention uses an AlN substrate and an AlGaN / GaN heterojunction device layer to form a homogeneous nitride system, achieving zero thermal mismatch to enhance mechanical strength and structural stability. The insulating AlN substrate is used directly as the isolation layer, eliminating the need for a traditional insulating layer, reducing overall thermal resistance and improving heat dissipation efficiency. Due to the non-magnetic permeability of semiconductors, parasitic inductance is negligible, and as a horizontal device, there is no need to additionally address the interface resistance between the AlGaN / GaN barrier layer and the AlN substrate, effectively reducing electrical losses. The excellent characteristics of the semi-insulating AlN substrate enable the module to achieve an ultra-high withstand voltage of several hundred kV. Simultaneously, by removing the bottom buffer layer to avoid defect-induced carrier trapping, dynamic response characteristics and switching stability are significantly improved.

[0036] [Preparation method of all-nitride integrated power module] The second aspect of this invention provides a method for preparing the aforementioned all-nitride integrated power module, such as... Figure 3 As shown, it includes the following steps: S1. On a conductive silicon substrate, a GaN buffer layer and a device layer 240 are sequentially prepared by an epitaxial growth process.

[0037] Using a conductive silicon substrate as a temporary support substrate, a GaN buffer layer is first grown on its surface using epitaxial growth processes (such as metal-organic chemical vapor deposition or molecular beam epitaxy) to provide a flat and suitable interface for the subsequent growth of device layer 240. After the GaN buffer layer is prepared, the GaN layer and AlGaN layer of device layer 240 are sequentially grown on top of the buffer layer using the same epitaxial process. Finally, a stacked structure of GaN buffer layer, GaN layer and AlGaN layer from bottom to top is constructed on the conductive silicon substrate, laying the foundation for the subsequent preparation of electrode layer 220 and device forming.

[0038] The GaN buffer layer has a thickness of 1~6μm, which can effectively alleviate the stress caused by the difference in lattice constant and thermal expansion coefficient between the conductive silicon substrate and the upper GaN device layer, reduce interface defects, and improve the stability of the heterojunction structure. At the same time, the sufficient thickness can serve as a good transition layer, providing a flat and high-quality surface for the epitaxial growth of device layer 240, ensuring the growth quality of the subsequent AlGaN / GaN heterojunction, and thus optimizing the density and mobility of the two-dimensional electron gas. In addition, the thickness of 1~6μm can balance the supporting role of the buffer layer with the requirement of thinning the overall structure, avoiding the inability to fully utilize the stress buffering effect due to excessive thinness, and preventing excessive thickness from increasing the overall thickness of the device, thus laying a reliable foundation for subsequent processes and device performance.

[0039] S2. An electrode layer 220 is formed on the surface of the device layer 240 by a wafer fabrication photolithography and metallization process; then the bottom conductive silicon substrate and GaN buffer layer are removed to obtain the gallium nitride device 200.

[0040] Through precise control of wafer fabrication photolithography and metallization processes, source, gate, and drain electrode layers 220 with specific patterns and material combinations are finally formed on the surface of device layer 240, providing a physical interface for electrical signal input, output, and control of gallium nitride device 200.

[0041] Then, a temporary bonding sheet (such as a silicon wafer or a glass sheet) is attached to the front side of the electrode layer 220 to protect its surface structure. Subsequently, the entire epitaxial wafer structure is flipped so that the bottom conductive silicon substrate and GaN buffer layer face upwards, ready for removal.

[0042] The specific removal process can be carried out in two ways: one is to place the epitaxial wafer in an ICP machine, introduce gases such as Cl2 / BCl3, and etch away the bottom silicon substrate and GaN buffer layer using a dry etching process; the other is to place the epitaxial wafer in a CMP machine, use SiO2 abrasive, and in a KOH alkaline solution environment, use chemical mechanical polishing to gradually remove the bottom silicon substrate and GaN buffer layer, finally obtaining only the gallium nitride device 200, at which point a protective film still exists on the surface of the electrode layer 220.

[0043] Removing the bottom GaN buffer layer improves the module's dynamic characteristics because the GaN buffer layer is prone to defects during fabrication due to lattice mismatch and impurity introduction. These defects act like "traps," trapping charge carriers and preventing them from responding promptly to control signals during device switching, resulting in dynamic delays or characteristic fluctuations. Removing the GaN buffer layer avoids these defects, preventing additional trapping of charge carriers during transport in device layer 240. This allows them to migrate and be controlled more quickly and stably following the control signals of electrode layer 220, significantly improving the module's dynamic response speed and stability, and optimizing its dynamic characteristics.

[0044] S3. Perform surface activation treatment on the AlN substrate, and then bond the gallium nitride device 200 to the AlN substrate using a bonding process.

[0045] Before bonding the gallium nitride device 200 to the AlN substrate, the surface of the AlN substrate is first activated by removing surface contaminants and oxide layers through plasma bombardment or chemical cleaning to enhance the surface activity of the substrate. Then, the prepared gallium nitride device 200 (including device layer 240 and electrode layer 220) is aligned with the preset position of the AlN substrate, and a low-temperature direct bonding process is used to make the gallium nitride device 200 and the AlN substrate tightly bonded by utilizing the chemical bond force or van der Waals force generated on the activated surface, forming a stable interface bond.

[0046] In the specific implementation of this step, the surface activation process is as follows: the AlN substrate is activated by oxygen, nitrogen and argon plasma at a voltage (200~2000V) and a current (20mA-200mA) for 10~300s.

[0047] After the AlN substrate surface activation treatment is completed, the gallium nitride device 200 is aligned with the preset position on the substrate. The chemical bonding force or van der Waals force of the activated surface is used to make the two initially tightly bonded at room temperature. Then, the bonded sample is subjected to subsequent annealing treatment in a low temperature environment (T≤400℃) to further improve the mechanical strength of the bonding interface and optimize the interface microstructure, so as to ensure the stability and reliability of the bonding interface and provide a guarantee for the overall performance of the module.

[0048] After the gallium nitride device 200 and the AlN substrate have completed bonding and annealing, and a stable interface has been formed, the temporary bonding sheet of the electrode layer 220 can be peeled off. Typically, the protective film is peeled off from the device surface by applying mechanical force or by dissolving it with a specific solvent. After peeling, the electrode layer 220 of the device is exposed, preparing for electrical isolation of the subsequent module and other subsequent process steps, ensuring a clean module surface and structural integrity.

[0049] S4. Finally, the gallium nitride device 200 is electrically isolated to obtain the all-nitride integrated power module.

[0050] During this step, the electrical isolation method includes ion implantation or etching.

[0051] During this step, the ion implantation process uses an energy of 20-500 keV and an ion concentration of 1E19-5E21 atoms / cm³. 3 .

[0052] In the fabrication of all-nitride integrated power modules, the final step requires electrical isolation of the gallium nitride device 200 to obtain independent functional units. The core implementation methods for this step include ion implantation or mesa etching. Ion implantation achieves efficient isolation through precise parameter control: during implantation, the ion energy is set to 20–500 keV to ensure that ions can penetrate the surface of the gallium nitride device 200 and reach a specified depth; the ion concentration is controlled between 1E19 and 5E21 atoms / cm³. 3 Ion implantation, by forming a high-resistivity layer or damaged region in the device isolation area, blocks the lateral current path. This ion implantation method can precisely define the isolation boundary and avoid electrical interference between adjacent devices. The etching process involves etching AlGaN and GaN layers in the designated device isolation area using gases such as BCl3, Cl2, and Ar. Etching to a specified depth blocks the lateral conduction of the two-dimensional electron gas, preventing electrical interference between adjacent devices. Both ion implantation isolation and etched mesa isolation can achieve electrical isolation of gallium nitride devices 200, resulting in a stable all-nitride integrated power module.

[0053] The fabrication method provided by this invention involves first growing a GaN buffer layer, a device layer 240, and an electrode layer 220 on a conductive silicon substrate, and then removing the silicon substrate and the buffer layer. This process utilizes the advantages of silicon substrates for epitaxial growth and wafer fabrication to ensure device fabrication accuracy, while removing the buffer layer avoids defect trapping issues and optimizes dynamic performance. After surface activation treatment of the AlN substrate, the gallium nitride device 200 is bonded, which enhances the interface bonding strength and stability. Furthermore, using the AlN substrate directly as the substrate and isolation layer eliminates the additional fabrication steps of traditional insulating layers and bottom buffer layers, simplifying the process flow. Finally, module integration is achieved through electrical isolation treatment. The overall process ensures the realization of core performance advantages such as zero thermal mismatch and low-resistance heat dissipation, while reducing the influence of interface resistance and parasitic parameters, providing a reliable fabrication guarantee for the high withstand voltage and high stability of the module.

[0054] [Electrical Appliances] A third aspect of the present invention provides an electrical appliance, including the aforementioned all-nitride integrated power module.

[0055] Given the advantages of the aforementioned all-nitride integrated power modules, electrical appliances using them can maintain stable operation under high-power conditions thanks to the module's zero thermal mismatch structure and optimized heat dissipation design, reducing the risk of failures caused by thermal stress. The low parasitic inductance and low interface resistance characteristics reduce energy loss and improve the energy efficiency of the appliances. The ultra-high withstand voltage capability of several hundred kV expands the application range of the appliances in the high-voltage field, making them suitable for a wider range of power scenarios. And the excellent dynamic response characteristics allow the appliances to react more quickly during switching and regulation, and operate more efficiently and stably.

[0056] Finally, it should be noted that the above-described embodiments are merely specific implementations of the present invention, used to illustrate the technical solutions of the present invention, and not to limit it. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments within the technical scope disclosed in the present invention, or make equivalent substitutions for some of the technical features; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. An all-nitride integrated power module, characterized in that, Includes the bottom substrate layer and several gallium nitride devices located thereon; The gallium nitride device has a device layer and an electrode layer arranged sequentially from bottom to top; The substrate layer is made of AlN, and the device layer is formed by an AlGaN / GaN heterojunction.

2. The all-nitride integrated power module according to claim 1, characterized in that, The electrode layer includes a source, a gate, and a drain; Preferably, the substrate layer has a fish fin heat sink structure.

3. The all-nitride integrated power module according to claim 1, characterized in that, The thickness of the substrate layer is 0.1~2mm; Preferably, in the device layer, the thickness of the AlGaN layer is 1~50nm and the thickness of the GaN layer is 0.1~1μm.

4. A method for preparing an all-nitride integrated power module according to any one of claims 1 to 3, characterized in that, On a conductive silicon substrate, a GaN buffer layer and a device layer are sequentially fabricated by epitaxial growth. An electrode layer is formed on the surface of the device layer by wafer fabrication, photolithography, and metallization. Subsequently, the bottom conductive silicon substrate and the GaN buffer layer are removed to obtain the gallium nitride device. The AlN substrate is surface activated, and the gallium nitride device is bonded to the AlN substrate by a bonding process; finally, the gallium nitride device is electrically isolated to obtain the all-nitride integrated power module.

5. The preparation method according to claim 4, characterized in that, The thickness of the GaN buffer layer is 1~6μm.

6. The preparation method according to claim 4, characterized in that, The surface activation process is as follows: the AlN substrate is activated by plasma at 500~2000V for 10~200s.

7. The preparation method according to claim 4, characterized in that, The bonding method is low-temperature bonding; Preferably, the low-temperature bonding is performed at 25~200°C; Preferably, the low-temperature bonding further includes post-bonding annealing. Preferably, the annealing process is performed by passing a current of 1-100A through the bonded interface to generate a temperature of <400°C.

8. The preparation method according to claim 4, characterized in that, The electrical isolation methods include ion implantation or etching.

9. The preparation method according to claim 8, characterized in that, During the ion implantation process, the energy is 20~500keV and the ion concentration is 1E19~5E21 atoms / cm3.

10. An electrical appliance, characterized in that, Includes the all-nitride integrated power module as described in any one of claims 1 to 3.

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