Two-dimensional perovskite-doped perovskite-based solar cell and preparation method thereof

Abstract

The invention discloses a two-dimensional perovskite-doped perovskite-based solar cell and a preparation method thereof, and the doped two-dimensional perovskite is a SbCl3-doped two-dimensional perovskite layer formed by reconstructing a passivation layer, such as PEAI, OAI, EDAI and the like, on the surface of three-dimensional perovskite based on an ammonium salt solution and mixing a small amount of isovalent ions SbCl3 in the solution; sbCl3 is mixed into an ammonium salt passivator solution, a three-dimensional perovskite / doped two-dimensional perovskite heterojunction structure is constructed on the three-dimensional perovskite active layer, the passivation effect of two-dimensional perovskite on the surface of the three-dimensional perovskite is improved, meanwhile, the electron density in the two-dimensional perovskite is improved through doping, and the performance of the three-dimensional perovskite solar cell is improved. The interface potential barrier of the two-dimensional perovskite is reduced, the charge extraction is enhanced, and the non-radiative recombination of the interface is inhibited. According to the invention, the doped two-dimensional perovskite is used as a passivation post-treatment process of the three-dimensional perovskite active layer, the preparation process of the perovskite-based solar cell is optimized, and the perovskite-based solar cell has important practical value for preparing the efficient and low-cost perovskite-based solar cell.

Description

Technical Field

[0001] This invention pertains to the field of tandem photovoltaics, specifically relating to a perovskite-based solar cell with a doped two-dimensional perovskite passivated three-dimensional perovskite surface and its preparation method. Background Technology

[0002] In the fabrication of perovskite-silicon tandem solar cells, C 60 Due to its high electron mobility, low parasitic absorption, and good process compatibility, it is the preferred electron transport material for upper-end perovskite sub-solar cells. However, in the three-dimensional perovskite active layer and the deposited C... 60 Numerous electrical activity defects exacerbate nonradiative recombination losses at the interface. To address this, researchers have proposed a series of passivation measures for the three-dimensional perovskite active layer, such as depositing ultrathin insulating layers, like LiF. X Passivation with ammonium salt solutions to form two-dimensional perovskites; passivation by interfacial field effects, etc.

[0003] Among the methods described above, the two-dimensional perovskite passivation strategy, with its atomic-level defect passivation and enhanced interface stability, has been widely applied to the passivation of three-dimensional perovskite surfaces. However, the two-dimensional perovskite formed by traditional passivation methods cannot resolve the trade-off between passivation efficiency and charge transport. Firstly, the traditional solution-based two-dimensional perovskite passivation strategy, combined with the excess PbI2 and uncoordinated Pb on the three-dimensional perovskite surface... 2+ Passivation layers formed through processes such as cation exchange or ligand-assisted surface reconstruction typically exhibit band gap broadening in perovskite / C 60 Band mismatch at the interface and the insulating organic ligands in the two-dimensional layer suppress the device's conductivity. Secondly, some passivation materials form mixed-dimensional phases, which, while reducing band gap broadening, create interfacial energy inhomogeneities that hinder charge transfer. These ultimately lead to C 60 Unnecessary contact loss at the interface. Summary of the Invention

[0004] For perovskite-based solar cells based on two-dimensional perovskite passivation, three-dimensional perovskite and C 60 The problem of charge transport loss remains serious. This invention aims to propose a two-dimensional perovskite-doped perovskite-based solar cell and its preparation method.

[0005] The technical solution adopted in this invention is as follows: A two-dimensional perovskite-doped perovskite-based solar cell is disclosed, wherein a two-dimensional perovskite layer doped with SbCl3 is disposed between the electron transport layer and the perovskite active layer, wherein the amount of SbCl3 added in the two-dimensional perovskite layer is 0.01% to 1% of the amount of two-dimensional perovskite mineral, and the thickness of the two-dimensional perovskite layer doped with SbCl3 is 1-10 nm.

[0006] In one specific embodiment, the perovskite-based solar cell is a positive perovskite solar cell or a two-terminal perovskite-silicon tandem solar cell, which is composed of a heterojunction silicon cell or a tunnel oxide passivated contact cell as a bottom cell and a perovskite solar cell as a top cell; the silicon cell can be a HJT cell, which comprises, from bottom to top, a metal electrode layer, a transparent conductive layer, an amorphous silicon passivation layer, a P-type heavily doped amorphous silicon layer, an N-type crystalline silicon wafer, an N-type heavily doped amorphous silicon layer, an amorphous silicon passivation layer, and a tunnel layer (intermediate recombination layer); the silicon cell can be a TOPCon cell, which comprises, from bottom to top, a metal electrode layer, a P-type polycrystalline silicon, a silicon oxide tunnel layer, an N-type crystalline silicon, a silicon oxide tunnel layer, an N-type polycrystalline silicon, and an intermediate recombination layer; the perovskite solar cell comprises, from bottom to top, a hole transport layer, a perovskite active layer, a doped two-dimensional perovskite passivation layer, an electron transport layer, a buffer layer, a transparent conductive layer, and an anti-reflection layer.

[0007] In one specific embodiment, the SbCl3-doped two-dimensional perovskite is a passivation layer formed based on the reconstruction of the surface of a three-dimensional perovskite by an ammonium salt solution, and a small amount of heterovalent ion SbCl3 is mixed in the solution to form a SbCl3-doped two-dimensional perovskite passivation layer.

[0008] In one specific embodiment, the perovskite active layer used in the perovskite-based solar cell is Cs x MA y FA 1-x-y PbI z Br 3-z , with a band gap of 1.40-1.80 eV, and the thickness of the prepared perovskite film is 700-2000 nm.

[0009] In one specific embodiment, the intermediate recombination layer is a thin layer of metal such as ITO, IZO, AZO, or Ag / Au, with a sheet resistance of 100-1000 Ω / □ and a light transmittance of 80-95%, and the thickness of the intermediate recombination layer is 2-50 nm.

[0010] In one specific embodiment, the hole transport layer is a self-assembled monolayer material (SAMs) such as 2PACz, 4PACz, MeO-4PACz, etc., with a thickness of 1-5 nm.

[0011] In one specific embodiment, the electron transport layer is C 60 , with a thickness of 10-30 nm.

[0012] In one specific embodiment, the buffer layer is BCP or tin oxide, with a thickness of 5-20 nm.

[0013] In one embodiment, the transparent conductive layer is ITO or IZO, with a thickness of 80-150 nm.

[0014] In one embodiment, the anti-reflective layer is LiF X or MgF X , with a thickness of 50-200 nm.

[0015] In one embodiment, the hole transport layer and perovskite active layer are sequentially prepared on the surface of the silicon-based cell by solution method, as follows: In one embodiment, the SAMs layer is prepared by spin-coating a SAMs solution (with alcohol or isopropanol as solvent) on the surface of the silicon-based cell substrate or conductive glass at a speed of 2000-6000 rpm for 25-50 s. The sample is then heated on a heating stage at 70-140°C for 10-20 min, thereby forming the hole transport layer.

[0016] In one embodiment, the perovskite active layer is prepared by spin-coating or doctor-blading a perovskite precursor solution on the substrate, using a reverse solvent, gas blowing or vacuum suction to form a perovskite intermediate phase, and then heating the sample on a heating stage at 100-170°C for 10-60 min to obtain the perovskite film. The precursor solution is prepared by dissolving CsI, MAI, MABr, FAI, MACl, PbI2 and PbBr2 powders in a mixed solvent of DMF and DMSO at a volume ratio of 4:1, with a molar concentration of 1.3-2 mol / L.

[0017] In one embodiment, the doped two-dimensional perovskite passivation layer is prepared by adding a series of diluted SbCl3 solution (isopropanol as solvent) to an ammonium salt solution, such as a 1-10 mg / ml PEAI solution (isopropanol as solvent), so that the amount of SbCl3 added is 0.01%-1% of the amount of two-dimensional perovskite substance, and the mixture is uniformly mixed to obtain a passivation agent precursor solution. The passivation agent precursor solution is spin-coated on the three-dimensional perovskite active layer at a speed of 2000-6000 rpm for 30-50 s, and then the sample is heated on a heating stage at 80-120°C for 5-15 min, thereby forming the doped two-dimensional perovskite layer.

[0018] In one embodiment, the electron transport layer is C 60 , and is prepared by using a thermal evaporation device to control the evaporation rate at 0.1-0.8 Å / s, with a thickness of about 10-30 nm.

[0019] In one specific embodiment, the buffer layer is BCP or tin oxide, with a thickness of 5-20 nm, wherein the BCP layer is prepared by physical vapor deposition at a rate of 0.1-1 Å / s; and the tin oxide layer is prepared by atomic layer vapor deposition.

[0020] In one specific embodiment, the transparent conductive layer is ITO or IZO, with a thickness of 80-150 nm, prepared by magnetron sputtering.

[0021] In one specific embodiment, the anti-reflection layer is LiF X or MgF X , with a thickness of 50-200 nm, prepared by physical vapor deposition at an evaporation rate of 0.2-2 Å / s.

[0022] In one specific embodiment, the environment for preparing the device requires that the humidity be ≤45% and the temperature be ≤30℃.

[0023] Compared with the prior art, the present application has the following beneficial technical effects: By doping the two-dimensional perovskite passivation layer on the three-dimensional perovskite using a specific dopant, not only is the passivation of the original two-dimensional perovskite on the surface of the three-dimensional perovskite improved, but also the electron density in the two-dimensional perovskite is increased, the work function of the two-dimensional perovskite is reduced, the interface potential barrier of the two-dimensional perovskite is lowered, and the extraction of electrons from the perovskite active layer to the C 60 is enhanced; meanwhile, the doped two-dimensional perovskite enhances the built-in electric field between the perovskite active layer and the C 60 , and inhibits the flow of holes to the C 60 , thereby inhibiting the non-radiative recombination at the interface. This method can effectively improve the photoelectric conversion efficiency, fill factor, and open-circuit voltage of the device at the same time. In the present application, the two-dimensional perovskite passivation layer is doped to improve the photoelectric performance of the perovskite-based solar cell, which improves the preparation process and has important practical value for preparing high-efficiency perovskite-based solar cells, especially two-terminal perovskite-silicon tandem solar cells. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 Figure 1 is a device structure schematic diagram of a two-dimensional perovskite-doped perovskite-silicon tandem solar cell (HJT) in an embodiment of the present application; Figure 2 Figure 2 is a device structure schematic diagram of a two-dimensional perovskite-doped perovskite-silicon tandem solar cell (TOPCon) in an embodiment of the present application; Figure 3 Figure 3 is an ultraviolet photoelectron spectrogram of the surface of a three-dimensional / two-dimensional perovskite with (W) or without (W / O) doping of a two-dimensional perovskite in Example 1 of the present application; Figure 4The current-voltage curve of the two-dimensional perovskite with (W) / without (W / O) doped two-terminal perovskite-silicon tandem solar cell (TOPCon) in the embodiment 4 of the present application; 60 The fluorescence lifetime contrast chart of the structure; Figure 5 The current-voltage curve of the two-dimensional perovskite with (W) / without (W / O) doped two-terminal perovskite-silicon tandem solar cell (TOPCon) in the embodiment 4 of the present application; Figure 6 The current-voltage curve of the two-dimensional perovskite with (W) / without (W / O) doped two-terminal perovskite-silicon tandem solar cell (TOPCon) in the embodiment 4 of the present application; Figure 7 The scanning electron microscope image of the two-dimensional perovskite with different concentration of doping in the embodiment 5 of the present application, the scale is 500 nm. DETAILED DESCRIPTION

[0025] The present application provides a two-dimensional perovskite doped perovskite-based solar cell and a preparation method. A small amount of SbCl3 is added to an ammonium salt passivation solution, which is spin-coated on the surface of a three-dimensional perovskite to form a doped two-dimensional perovite. This method reduces the work function of the two-dimensional perovskite, reduces the interface barrier of the two-dimensional perovskite, enhances the extraction of photo-generated electrons from the perovskite active layer to the C 60 , and enhances the built-in electric field between the perovskite active layer and the C 60 , thereby inhibiting the non-radiative recombination at the interface. This method can effectively improve the photoelectric conversion efficiency, fill factor and open circuit voltage of the device.

[0026] The present application will be further described in detail below with reference to specific embodiments.

[0027] In order to facilitate comparison and description of the effect of the method of the present application, based on the HJT bottom cell, a two-terminal perovskite-silicon tandem solar cell device structure as shown in Figure 1 is prepared in this embodiment, which includes, from top to bottom: an anti-reflection layer, a metal electrode (silver, grid line), a transparent conductive layer (transparent conductive electrode), a tin dioxide buffer layer, a C 60 electronic transport layer, a doped two-dimensional perovskite passivation layer, a Cs x MA y FA 1-x-y PbI z Br 3-z three-dimensional perovskite active layer, SAMs hole transport layer, HJT cell; wherein, in this embodiment, a metal electrode is added for silicon bottom cell electrode lead-out. The HJT cell as the bottom cell includes, from bottom to top: a metal electrode layer (metal electrode, silver is used in this embodiment), a transparent conductive layer (transparent conductive electrode), an amorphous silicon passivation layer, a P-type amorphous silicon layer, an N-type crystalline silicon wafer, an N-type heavily doped amorphous silicon layer, an amorphous silicon passivation layer and an intermediate recombination layer.

[0028] Based on the TOPCon base cell, this embodiment also fabricated such as Figure 2 The two-terminal perovskite-silicon tandem solar cell device structure shown includes, from top to bottom: an antireflection layer, a metal electrode (silver, grid lines), a transparent conductive layer (transparent conductive electrode), a tin dioxide buffer layer, and a C layer. 60 Electron transport layer, doped two-dimensional perovskite passivation layer, Cs x MA y FA 1-x-y PbI z Br 3-z The system comprises a three-dimensional perovskite active layer, a SAMs hole transport layer, and a TOPCon cell. In this embodiment, a metal electrode is added for the lead-out of the silicon bottom cell electrode. The TOPCon cell, serving as the bottom cell, includes, from bottom to top, a metal electrode layer (silver is used in this embodiment), P-type polycrystalline silicon, a silicon oxide tunneling layer, N-type crystalline silicon, another silicon oxide tunneling layer, N-type polycrystalline silicon, and an intermediate composite layer.

[0029] Example 1 To compare the difference in surface work function between the three-dimensional and two-dimensional structures formed after SbCl3 is applied to form a two-dimensional perovskite on a three-dimensional perovskite, this embodiment prepared corresponding samples and performed corresponding ultraviolet photoelectron spectroscopy (UPS) tests.

[0030] Preparation of the hole transport layer: A 1 mg / ml solution of 2PACz was prepared in ethanol and stirred for 1 hour. An ITO transparent conductive glass substrate was subjected to UV ozone for 15 minutes, followed by transfer to a nitrogen glove box. The 2PACz solution was spin-coated at 5000 rpm for 30 seconds, and then heated on a hot plate at 100°C for 10 minutes.

[0031] Preparation of perovskite layer: CsI, MAI, FAI, PbI2, and PbBr2 powder raw materials were prepared according to stoichiometric ratio to form Cs 0.05 MA 0.15 FA 0.8 Pb(I 0.75 Br 0.25 3. Perovskite precursor solution. The precursor solution was dissolved in a mixed solvent of DMF and DMSO at a volume ratio of 4:1, with a precursor solution concentration of 1.4 mol / L. The mixture was stirred and shaken for 2 hours to ensure homogeneity. The above perovskite precursor solution was dropped onto the hole transport layer substrate. The process parameters were 1000 rpm for 10 s spin-coating and 5000 rpm for 30 s spin-coating. After spin-coating, 150 μl of chlorobenzene anti-solvent was added 10 s later. The film was then annealed at 100℃ for 15 min on a heating stage. The bandgap of the prepared perovskite film was approximately 1.68 eV.

[0032] Two-dimensional perovskite passivation layer preparation: prepare a 2 mg / ml PEAI solution (isopropanol solvent) as a non-doped two-dimensional perovskite control group; prepare a PEAI solution, and add a diluted SbCl3 solution to it, ensuring that the final concentration of PEAI is 2 mg / ml, and the amount of SbCl3 added is 0.1% of the amount of substance of PEAI. After shaking and stirring the above two solutions for 1 hour, spin-coat them on the active layer of the three-dimensional perovskite layer according to the process of 5000 rpm for 30 s, and then anneal them on a heating stage at 100°C for 6 min to form a two-dimensional perovskite passivation layer, thereby constructing a three-dimensional / two-dimensional perovskite structure.

[0033] Figure 3 For the UPS maps of the three-dimensional / two-dimensional perovskite surfaces with and without SbCl3 doping, after the addition of 0.1% SbCl3, the work function of the perovskite surface decreases, indicating that the electron concentration increases, which will be conducive to the transfer of electrons from the three-dimensional perovskite to the C 60 and reduce non-radiative recombination.

[0034] Example 2 The preparation and processing are the same as in Example 1, and on the basis of this structure, the sample with the prepared passivation layer is transferred to an electron beam evaporation film plating machine instrument, and 20 nm of C -4 is evaporated at a rate of 0.2 Å s -1 under vacuum conditions of 2.0 x 10 60 Pa. Then, the prepared sample is subjected to time-resolved fluorescence lifetime test comparison (TRPL), and the results are shown in Figure 4 .

[0035] Figure 4 It is shown that, for the sample of the two-dimensional perovskite passivated after SbCl3 doping, compared with the undoped control sample, in the initial 10 ns range, it shows a rapid decay of fluorescence intensity, indicating a rapid extraction of electrons between the three-dimensional perovskite and the C 60 , thereby causing a rapid decay of intensity; in the subsequent time range of 500 ns, the fluorescence intensity of the SbCl3 doped sample decays slowly, indicating that the doped two-dimensional perovskite layer inhibits the non-radiative recombination of the perovskite and the C 60 interface, so that the intensity decay is slow.

[0036] Example 3 The 2PACz precursor solution and the above preparation method are consistent. The HJT bottom cell is subjected to ultraviolet ozone for 15 min, and then the silicon bottom cell is transferred to a nitrogen glove box. The above 2PACz solution is spin-coated according to the process of 5000 rpm for 30 s, and then transferred to a heating stage at 100°C for heating for 10 min.

[0037] Perovskite layer preparation: CsI, MAI, FAI, PbI2, PbBr2 powder raw materials were prepared into Cs 0.05 MA 0.15 FA 0.8 Pb(I 0.75 Br 0.25 )3 perovskite precursor solution. The precursor solution was dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 4:1, and the concentration of the precursor solution was 1.7 mol / L. The mixture was stirred and shaken for 2 hours to ensure uniformity. The above perovskite precursor solution was added dropwise onto the hole transport layer substrate, and the process parameters were 2000 rpm rotation for 45 s, 7000 rpm spin coating for 10 s. 250 μl of chlorobenzene anti-solvent was added 10 s after the spin coating was completed, and then the sample was annealed at 100°C for 15 min on a heating stage.

[0038] The passivation method of the doped PEAI two-dimensional perovskite layer is the same as above, and the undoped PEAI passivation layer is prepared under the same conditions as the control, and then the subsequent steps are carried out to prepare a two-terminal perovskite-silicon tandem solar cell device.

[0039] Preparation of electron transport layer: the sample with prepared passivation layer was transferred to an electron beam evaporation film plating machine, and 20 nm of C -4 60 was evaporated at an evaporation rate of 0.2 Å / s under vacuum conditions of 2.0 x 10 60 .

[0040] Preparation of buffer layer: the sample with prepared electron transport layer was transferred to an atomic layer deposition device, and the buffer layer was deposited using a tin source and a water source at 100°C. The tin source was heated to 80°C, the water source was at room temperature, and the nitrogen flow was 90 sccm. One cycle includes: tin source pulse for 1 s and purge for 6 s, water source pulse for 1 s and purge for 6 s. A total of 120 cycles were run.

[0041] Preparation of transparent conductive electrode: the sample with prepared buffer layer was transferred to a magnetron sputtering instrument, and sputtered at a power of 80 W for 10 min under a gas pressure of 0.35 Pa.

[0042] Preparation of metal electrode layer: a thermal evaporation film plating machine was used to evaporate a 300 nm silver metal electrode layer under vacuum conditions of 2.0 x 10 -4 Pa.

[0043] Preparation of anti-reflective layer: a thermal evaporation film plating machine was used to evaporate a 120 nm MgF -4 2 anti-reflective layer under vacuum conditions of 2.0 x 10 X Pa.

[0044] The performance parameters of the two-terminal perovskite-silicon tandem solar cells with HJT as the bottom cell prepared by the doped PEAI two-dimensional perovskite passivation layer and the undoped PEAI two-dimensional perovskite passivation layer are shown in Table 1, and the I-V curves are shown in Figure 5 The preparation process is improved in the present application, and the doping of the doped two-dimensional perovskite passivation layer significantly improves the photoelectric performance of the perovskite-silicon tandem solar cell, which has great potential for commercialization.

[0045] Table 1 Performance parameters of the Example 3 cell and the control cell Example 4 The perovskite-silicon tandem solar cell is prepared with TOPCon as the bottom cell, and the rest of the preparation method is consistent with Example 3.

[0046] The performance parameters of the two-terminal perovskite-silicon tandem solar cells with TOPCon as the bottom cell prepared by the doped PEAI two-dimensional perovskite passivation layer and the undoped PEAI two-dimensional perovskite passivation layer are shown in Table 2, and the I-V curves are shown in Figure 6 The preparation process is improved in the present application, and the doping of the doped two-dimensional perovskite passivation layer significantly improves the photoelectric performance of the perovskite-silicon tandem solar cell, which has great potential for commercialization.

[0047] Table 2 Performance parameters of the Example 4 cell and the control cell Example 5 597.6 mg of PEAI, 345.8 mg of PbI2 and 91.8 mg of PbBr2 powder were dissolved in 1 ml of DMF solution, and the molar ratio was 2:0.75:0.25, then stirred for 2 hours, to prepare a 1.2 M undoped two-dimensional perovskite precursor solution. In addition, based on the above, 0.1% and 3% of SbCl3 in powder relative to the amount of substance of PEAI were added, and the content of PbI2 and PbBr2 was reduced accordingly, and dissolved in 1 ml of DMF solution to prepare a 1.2 M two-dimensional perovskite precursor solution doped with 0.1% and 3%. The precursor solution was spin-coated at a process parameter of 5000 rpm, 30 s, and then heated on a 80°C heating stage for 3 min, and then compared by scanning electron microscopy (SEM), as shown in Figure 7 The scale is 500 nm.

[0048] Figure 7Comparative display, compared with the undoped two-dimensional perovskite, low doping (0.1% SbCl3) reduces the phase inhomogeneity while maintaining the integrity of the microstructure, indicating that the two-dimensional structure doped with Sb is more advantageous than the undoped phase. However, high doping (3% SbCl3) will increase the density of pinholes and be accompanied by obvious cracks, which may cause phase separation and lattice strain, thereby destroying the formation of two-dimensional perovskite, therefore, the doping amount of Sb is 0.01% and 1% of the amount of substance of PEAI.

[0049] Example 6 The perovskite-silicon tandem solar cell with TOPCon as the bottom cell was prepared, and the rest of the preparation method was consistent with that of Example 3, except that the doping amount of Sb was 0.01% of the amount of substance of PEAI.

[0050] The performance parameters of the prepared two-terminal perovskite-silicon tandem solar cell with TOPCon as the bottom cell were detected, and the results showed that the preparation process was improved in the present application, and the doping of the two-dimensional perovskite passivation layer significantly improved the photoelectric performance of the perovskite-silicon tandem solar cell, which had great potential for commercialization.

[0051] Example 7 The perovskite-silicon tandem solar cell with TOPCon as the bottom cell was prepared, and the rest of the preparation method was consistent with that of Example 3, except that the doping amount of Sb was 1% of the amount of substance of PEAI.

[0052] The performance parameters of the prepared two-terminal perovskite-silicon tandem solar cell with TOPCon as the bottom cell were detected, and the results showed that the preparation process was improved in the present application, and the doping of the two-dimensional perovskite passivation layer significantly improved the photoelectric performance of the perovskite-silicon tandem solar cell, which had great potential for commercialization.

[0053] The above is only a non-limiting embodiment of the present application, and for those skilled in the art, without departing from the inventive concept and without creative labor, a number of modifications and improvements can be made, which are within the scope of protection of the present application.

Claims

1. A two-dimensional perovskite doped perovskite-based solar cell, characterized in that, The two-dimensional perovskite doped perovskite-based solar cell is provided with a two-dimensional perovskite layer doped with SbCl3 between the electron transport layer and the perovskite active layer, wherein the amount of SbCl3 added in the two-dimensional perovskite layer doped with SbCl3 is 0.01% to 1% of the amount of substance of the two-dimensional perovskite, and the thickness of the two-dimensional perovskite layer doped with SbCl3 is 1-10 nm.

2. The two-dimensional perovskite doped perovskite-based solar cell according to claim 1, characterized in that, The two-dimensional perovskite layer doped with SbCl3 is prepared by the following method: A solution is prepared by adding SbCl3 in an amount of 0.01% to 1% of the amount of substance of the two-dimensional perovskite and two-dimensional perovskite in a concentration of 1-10 mg / ml, and the solution is mixed uniformly to obtain a passivator precursor solution; the passivator precursor solution is spin-coated on the three-dimensional perovskite active layer at a speed of 2000-6000 rpm for 30-50 s, and then heated at 80-120°C for 5-15 min to form the two-dimensional perovskite layer doped with SbCl3.

3. The two-dimensional perovskite doped perovskite-based solar cell according to claim 1, characterized in that, The two-dimensional perovskite is PEAI, OAI or EDAI.

4. The two-dimensional perovskite doped perovskite-based solar cell according to claim 1, characterized in that, The perovskite active layer is Cs x MA y FA 1-x-y PbI z Br 3-z , with a band gap of 1.40-1.80 eV, and the thickness of the perovskite film is 700-2000 nm.

5. The two-dimensional perovskite doped perovskite-based solar cell according to claim 1, characterized in that, The perovskite-based solar cell is a positive perovskite solar cell or a two-terminal perovskite-silicon tandem solar cell, the two-terminal perovskite-silicon tandem solar cell is composed of a heterojunction silicon cell or a tunnel oxide passivation contact cell as a bottom cell and a perovskite solar cell as a top cell; the heterojunction silicon cell comprises, from bottom to top, a metal electrode layer, a transparent conductive layer, an amorphous silicon passivation layer, a P-type amorphous silicon layer, an N-type silicon wafer, an N-type heavily doped amorphous silicon layer, an amorphous silicon passivation layer and an intermediate composite layer; the tunnel oxide passivation contact cell comprises, from bottom to top, a metal electrode layer, a P-type polycrystalline silicon, a silicon oxide tunnel layer, an N-type crystalline silicon, a silicon oxide tunnel layer, an N-type polycrystalline silicon, an intermediate composite layer; the perovskite solar cell comprises, from bottom to top, a hole transport layer, a perovskite active layer, a doped two-dimensional perovskite passivation layer, an electron transport layer, a buffer layer, a transparent conductive layer and an anti-reflection layer.

6. The two-dimensional perovskite doped perovskite-based solar cell according to claim 5, characterized in that, The intermediate composite layer is ITO, IZO, AZO or Ag / Au, has a sheet resistance of 100-1000 Ω / □, a light transmittance of 80-95%, and a thickness of 2-50 nm.

7. The two-dimensional perovskite doped perovskite-based solar cell according to claim 5, characterized in that, The electron transport layer is C60 and has a thickness of 10-30 nm.

8. The two-dimensional perovskite doped perovskite-based solar cell according to claim 5, characterized in that, The hole transport layer is SAMs and has a thickness of 1-5 nm.

9. The two-dimensional perovskite doped perovskite-based solar cell according to claim 5, characterized in that, The buffer layer is BCP or tin oxide, with a thickness of 5-20 nm; the transparent conductive layer is ITO or IZO, with a thickness of 80-150 nm; and the anti-reflection layer is LiF or MgF X , with a thickness of 50-200 nm.

10. A method for producing a two-dimensional perovskite doped perovskite-based solar cell according to any one of claims 5 to 9, characterized in that, Comprising: a heterojunction silicon cell or a tunnel oxide passivation contact cell as a bottom cell, a hole transport layer prepared on the bottom cell; a three-dimensional perovskite active layer prepared on the hole transport layer; a solution is prepared by adding SbCl3 in an amount of 0.01% to 1% of the amount of substance of the two-dimensional perovskite and two-dimensional perovskite in a concentration of 1-10 mg / ml, and the solution is mixed uniformly to obtain a passivator precursor solution; the passivator precursor solution is spin-coated on the three-dimensional perovskite active layer at a speed of 2000-6000 rpm for 30-50 s, and then heated at 80-120°C for 5-15 min to form the two-dimensional perovskite layer doped with SbCl3. Finally, an electron transport layer, a buffer layer, a transparent conductive layer and an anti-reflection layer are prepared on the surface of the two-dimensional perovskite layer doped with SbCl3 to obtain the two-terminal perovskite-silicon tandem solar cell.

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