HIGH TEMPERATURE BIAS HEATER WITH ADVANCED Far EDGE ELECTRODE, ELECTROSTATIC CHUCK AND EMBEDDED

Abstract

Examples of a substrate support are provided herein. In some examples, a substrate support has a ceramic electrostatic chuck having a body. The body has a first side configured to support a substrate and a second side opposite the first side. The main body is provided with a clamping electrode; the active edge electrode is arranged adjacent to the clamping electrode; the floating mesh holes are formed in the lower part of the clamping electrode; the heater is arranged below the floating mesh holes; and a ground mesh disposed below the heater, where the ground mesh is adjacent to the second side.

Description

Technical Field

[0001] Examples of this disclosure generally relate to apparatus and methods for manufacturing semiconductor devices. More specifically, the apparatus disclosed herein relates to an electrostatic chuck assembly for use in a plasma processing chamber. Background Technology

[0002] The fabrication of microelectronic devices typically involves a complex sequence of processes, requiring hundreds of individual operations to be performed on semiconductor, dielectric, and conductive substrates. Examples of these processes include oxidation, diffusion, ion implantation, thin film deposition, cleaning, etching, and photolithography. Each operation is time-consuming and expensive.

[0003] As the critical dimensions of microelectronic devices continue to shrink, the design and fabrication of these devices on substrates are becoming, or have become, increasingly complex. Control over critical dimensions and process uniformity is becoming increasingly critical. The complex multilayer stacks used to fabricate microelectronic devices involve precise process monitoring of critical dimensions such as thickness, roughness, stress, density, and potential defects. Process formulations used to form devices often employ multiple incremental processes to ensure critical dimensions are maintained. Typically, each incremental process may utilize one or more processing chambers, which increases the additional time required to form the device and also increases the chance of forming defects.

[0004] As the critical dimensions of these devices shrink, traditional manufacturing techniques encounter new challenges. For example, one operation used in manufacturing involves bottom-up trench filling of the metal during device formation. With the smaller critical dimensions of these devices, the filler material often seals the top of the trench before completely filling the bottom. Additionally, processing deviations can occur due to plasma coupling to the electrostatic chuck, temperature inhomogeneities in the support substrate and / or the entire electrostatic chuck during device formation, negatively impacting processing performance. To achieve good bottom-up filling and prevent processing deviations, conventional solutions require the use of various dedicated chambers. However, multiple operations across multiple processing chambers increase production costs and complexity.

[0005] Therefore, there is a need to improve the processing system. Summary of the Invention

[0006] Examples of substrate supports are provided herein. In some examples, a substrate support has a ceramic electrostatic chuck with a body. The body has a first side and a second side, the first side being configured to support a substrate, and the second side being opposite to the first side. The body has a clamping electrode; an active edge electrode disposed adjacent to the clamping electrode; a floating mesh disposed below the clamping electrode; a heater disposed below the floating mesh; and a grounding mesh disposed below the heater, wherein the grounding mesh is adjacent to the second side.

[0007] In another example, a processing chamber is provided. A processing chamber has a chamber body and a substrate support disposed within an internal volume of the chamber body. The substrate support has a ceramic electrostatic chuck, which has a body. The body has a first side and a second side, the first side being configured to support the substrate, and the second side opposite to the first side. The body has a clamping electrode; an active edge electrode disposed adjacent to the clamping electrode; a floating mesh disposed below the clamping electrode; a heater disposed below the floating mesh; and a grounding mesh disposed below the heater, wherein the grounding mesh is adjacent to the second side. Attached Figure Description

[0008] To gain a detailed understanding of the above-described features of the invention, reference can be made to implementations, some of which are shown in the accompanying drawings. However, it should be noted that the drawings illustrate only typical implementations of the invention and should not be construed as limiting its scope, as other equivalent embodiments are permissible.

[0009] Figure 1 A schematic side view of a processing chamber with a substrate support, according to at least some examples of the present disclosure, is depicted.

[0010] Figure 2A A schematic partial side view of a substrate support member according to an example of this disclosure is depicted.

[0011] Figure 2B Depicting Figure 2A An enlarged view of a portion of the substrate support shown.

[0012] Figure 3 A schematic partial side view of a substrate support member according to another example of this disclosure is depicted.

[0013] For ease of understanding, the same reference numerals are used where possible to denote the same elements common in the figures. It is anticipated that elements disclosed in one implementation may be usefully used in other implementations without specific description. Detailed Implementation

[0014] This disclosure provides an electrostatic chuck assembly having an edge ring resting on a ceramic plate. The ceramic plate supports a substrate during plasma processing. The ceramic plate has a heater capable of heating the substrate to 700 degrees Celsius. The ceramic plate has separate clamping electrodes and an edge ring for holding the substrate. Radio frequency (RF) electrodes (edge ​​electrodes) extend to the outermost edge of the ceramic plate to form a denser plasma at the substrate edge, thereby reducing the edge exclusion area on the substrate and improving yield. Control over the film profile on the substrate can be maintained when operating at frequencies from 350 kHz to 60 MHz. The ceramic plate is capable of generating RF pulses with very low duty cycles, pulse frequencies between 0.2 Hz and 20 Hz, to prevent film damage through bottom-up trench filling. Low duty cycle RF pulses in the 0.2 Hz to 20 Hz range can be used in plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) processes, which enable bottom-up filling of trenches by preventing the sidewalls of the trenches from closing during filling, thus preventing the formation of porous films in the trenches.

[0015] The embedded grounded RF electrode helps prevent RF coupling to the bottom of the chamber, thereby reducing the required chamber depth and thus the chamber volume. The reduced chamber volume helps to reduce the purification time required during PEALD treatment.

[0016] Advantageously, the high-temperature electrostatic chuck assembly can perform both PECVD / PEALD deposition and in-situ etching / treatment using the same ceramic plate. The use of edge electrodes in the electrostatic chuck assembly improves film edge coverage. Due to the embedded grounding electrode, the electrostatic chuck assembly also features a reduced footprint, which further enhances reliability by avoiding plasma emission in the gaps, as seen in previous grounding methods.

[0017] Figure 1 A schematic side view of a plasma processing chamber 100 having a substrate support 124 according to at least some examples of this disclosure is depicted. In some examples, the plasma processing chamber 100 is an etching processing chamber. However, other types of processing chambers configured for different processes may also be used or modified for use with the examples of the substrate support 124 described herein.

[0018] The plasma processing chamber 100 is a vacuum chamber adapted to maintain a pressure below atmospheric pressure within its internal volume 120 during substrate processing. The plasma processing chamber 100 includes a chamber body 106 covered by a cover 104, which encloses a processing volume 121 located above a substrate support 124 within the upper portion of the internal volume 120. The plasma processing chamber 100 may also include one or more gaskets 105 surrounding various chamber components to prevent unwanted reactions between these components and the ionized processing material. The chamber body 106 and cover 104 may be made of a metal, such as aluminum. The chamber body 106 may be grounded via coupling to a ground 115.

[0019] A substrate support 124 is disposed within a cavity internal volume 120 to support and hold a substrate 122, such as a semiconductor wafer, thereon. The substrate support 124 may typically include an electrostatic chuck assembly 150 (see below). Figure 2B (Described in more detail) and a hollow support shaft 112 for supporting the electrostatic chuck assembly 150. The electrostatic chuck assembly 150 includes an electrostatic chuck 152 having one or more clamping electrodes 154 disposed therein. An edge ring 187 is disposed on and surrounds the substrate 122 on the substrate support 124. The electrostatic chuck 152 electrostatically clamps the substrate 122 to the substrate support 124.

[0020] The hollow support shaft 112 provides a conduit to supply, for example, backside gas, process gas, fluid, coolant, power, or the like to the substrate support 124. In some examples, the hollow support shaft 120 is attached to the bottom surface of the plasma chamber body 106, and the substrate support 124 is secured within the process chamber 100. In other examples, the hollow support shaft 112 is coupled to a lifting mechanism 113, such as an actuator or motor, which provides the electrostatic chuck assembly 150 in the upper process position (e.g., Figure 1 Vertical movement between the lower conveying position (not shown) and the lower transport position (not shown). The bellows assembly 110 is disposed around the hollow support shaft 112 and coupled between the electrostatic chuck assembly 150 and the bottom surface 126 of the plasma processing chamber 100 to provide a flexible seal that allows vertical movement of the electrostatic chuck assembly 150 while preventing vacuum loss from within the plasma processing chamber 100.

[0021] The hollow support shaft 112 provides conduits for coupling the back-side gas supply 141, the negative pulse DC power source 140, and the bias power supply 117 to the electrostatic chuck assembly 150. In some examples, the bias power supply 117 includes one or more RF bias power sources. The back-side gas supply 141 is disposed outside the chamber body 106 and supplies heat transfer gas to the electrostatic chuck assembly 150. In some examples, the substrate support 124 may alternatively include AC, DC, or RF bias power.

[0022] The substrate support 124 may or may not include a substrate lifting assembly 130. The substrate lifting assembly 130 may include a lifting rod 109 mounted on a platform 108 connected to a shaft 111, coupled to a second lifting mechanism 132 for raising and lowering the platform 108 and the pin 109, allowing the substrate 122 to be placed on or removed from the electrostatic chuck assembly 150. The electrostatic chuck assembly 150 may include a through-hole to receive the lifting rod 109. A bellows assembly 131 is coupled between the substrate lifting assembly 130 and the bottom surface 126 to provide a flexible seal that maintains a chamber vacuum during vertical movement of the substrate lifting assembly 130. Alternatively, the substrate lifting assembly 130 may be entirely included inside the processing chamber 100, for example, within the substrate support assembly 124.

[0023] In some examples, the electrostatic chuck assembly 150 includes gas distribution channels 142 extending from the lower surface of the electrostatic chuck assembly 150 to various openings in the upper surface of the electrostatic chuck assembly 150. The gas distribution channels 142 are configured to supply a back-side gas (such as nitrogen (N) or helium (He)) to the top surface of the electrostatic chuck assembly 150 to act as a heat transfer medium. The gas distribution channels 142 are in fluid communication with a back-side gas supplier 141 via conduits to control the temperature and / or temperature profile of the electrostatic chuck assembly 150 during use.

[0024] The plasma processing chamber 100 is coupled to and in fluid communication with a pumping system 114, which includes a throttle valve (not shown) and a vacuum pump (not shown) for venting the plasma processing chamber 100. The pressure inside the plasma processing chamber 100 can be adjusted by adjusting the throttle valve and / or the vacuum pump. The plasma processing chamber 100 is also coupled to and in fluid communication with a process gas supplier 118, which supplies one or more process gases to the plasma processing chamber 100 for processing the substrate 122 disposed therein.

[0025] In operation, plasma 102 is generated in the internal volume 120 of the chamber to perform one or more processes. Plasma 102 can be generated by coupling power from a plasma power source (e.g., an RF plasma power supply 170) to the process gas via one or more electrodes near or inside the internal volume 120 to ignite the process gas. Bias power can also be supplied from a bias power supply 117 to one or more clamping electrodes 154 within the electrostatic chuck assembly 150 to attract ions from plasma 102 to substrate 122. The RF plasma power supply 170 can supply RF energy to the processing chamber 100 at a frequency of approximately 40 MHz or higher to sustain plasma 102 therein.

[0026] Figure 2A A schematic partial side view of a substrate support 124 according to at least one example of the present disclosure is depicted. Figure 2B Depicting Figure 2A An enlarged view of a portion of the substrate support shown, and will depend on Figure 2B This provides a detailed view for discussing the location of features.

[0027] The electrostatic chuck 152 has a body 202. The body 202 may be uniformly formed of a ceramic material. In one example, the body 202 is made of AlN, Al2O3, quartz, or other suitable materials. The body 202 of the electrostatic chuck 152 is manufactured in the form of a ceramic plate in which electrodes are embedded.

[0028] The body 202 includes a first side 216 configured to support a substrate 122 and a second side 224 opposite to the first side 216. An electrostatic chuck 152 has an outer diameter 255. The body 202 has an inner portion 282 and an outer portion 281, the outer portion 281 extending to the outer diameter 255 and surrounding the inner portion 282. The substrate 122 is disposed on the inner portion 282, and an edge ring 187 is disposed on the outer portion 281. The thickness of the body 202 between the first side 216 and the second side 224 is between approximately 18 mm and 22 mm, such as approximately 20 mm.

[0029] The body 202 of the electrostatic chuck 152 has one or more clamping electrodes 154, an RF floating mesh 231, optional spoke mesh 229, one or more heaters 249, and a grounding mesh 247. The clamping electrodes 154, RF floating mesh 231, and spoke mesh 229 can all be coupled to one or more RF power sources. The clamping electrodes 154 are coupled to a DC power supply and can also optionally be coupled to an RF power source.

[0030] One or more clamping electrodes 154 are embedded in the internal portion 282 of the body 202, adjacent to the first side 216. When energized, the clamping electrodes 154 electrostatically clamp the substrate 122 to the first side 216 of the electrostatic chuck 152. The one or more clamping electrodes 154 may be unipolar or bipolar. In some examples, the electrostatic chuck 152 provides a Coulombic clamping force. In some examples, the electrostatic chuck 152 provides a Johnsen-Rahbek clamping force. In some examples, the one or more clamping electrodes 154 include an upper electrode, a lower electrode (not shown), and a plurality of posts electrically coupled to the upper and lower electrodes. In one or more examples, the clamping electrodes may also be RF bias electrodes. For example, RF power may be supplied on top of the DC clamp.

[0031] Adjacent to the clamping electrode 154 is an active far-edge electrode 119 disposed in the outer portion 281 of the body 202. The active far-edge electrode 119 may be coupled to a bias power supply 117 for biasing and shaping the plasma shell. The active far-edge electrode 119 is configured to operate independently of the clamping electrode 154. However, in addition to the clamping power supply, the clamping electrode 154 may optionally be coupled to the bias power supply 117 for shaping the plasma shell. A variable capacitor 241 may be disposed between the bias power supply 117 and the clamping electrode 154 to isolate the clamping electrode 154 from the active far-edge electrode 119. In one example, the active far-edge electrode 119 may be energized while the clamping electrode 154 is de-energized. However, it should be understood that the clamping electrode 154 may be energized simultaneously with the active far-edge electrode 119, or alternately energized simultaneously with the active far-edge electrode 119 being de-energized.

[0032] In some examples, the RF energy provided by the bias power supply 117 may have a frequency between about 350 kHz and about 60 MHz. In one example, the bias power supply 117 is configured to generate an RF signal superimposed on a pulsed voltage signal of a negative pulsed DC power source 140. In one example, the voltage waveform of the negative pulsed DC power source 140 may include a pulsed voltage signal range of about 0.2 Hz to about 20 Hz, with a duty cycle range of 10% to 100%, superimposed on an RF signal of about 350 kHz to about 60 MHz. The negative pulsed DC power source 140 is configured to provide a power profile to correct for plasma shell curvature and maintain a substantially flat plasma shell profile across the substrate 122.

[0033] An edge ring 187 is positioned horizontally above an active far-edge electrode 119 in the outer portion 281 of the electrostatic chuck 152. The active far-edge electrode 119 may be additionally coupled to a negative pulse DC power supply (not shown) to clamp the edge ring 187 to the electrostatic chuck 152. The negative pulse DC power supply is configured to provide a power profile to correct for plasma shell curvature and maintain a substantially flat plasma shell profile along the edge of the substrate 122.

[0034] All dimensions discussed further below are taken along the outer diameter 255. For example, the body 202 has a recess located at the center of a first side 216 of the body 202. The recess is located above the clamping electrode 154 and extends beyond the length of the clamping electrode 154. The recess may extend into the body from about 0.5 mm to about 1.3 mm, such as 1 mm. When describing the distance at which the clamping electrode 154 is located below the first side 216, the distance includes material of the body 202 not present in the recess. Therefore, when the clamping electrode 154 is described as being located 2 mm below the first side 216, the clamping electrode 154 may be located only 1 mm below the surface of the recess.

[0035] The active far-edge electrode 119 may be spaced from the outer diameter 255 at a distance 297 of approximately 2 mm to approximately 3 mm. For example, the distance 297 from the active far-edge electrode 119 may be approximately 2.5 mm from the outer diameter 255. The clamping electrode 154 may be spaced from the adjacent active far-edge electrode 119 at a distance 298 of approximately 2 mm to approximately 6 mm, such as approximately 4 mm. The clamping electrode 154 and the active far-edge electrode 119 may be located below the first side 216 at a distance 291 of approximately 1.5 mm to approximately 3 mm, such as approximately 2.3 mm. The active far-edge electrode 119 extends to the outermost edge of the body 202, resulting in a denser plasma at the edge of the substrate 122, which reduces the edge exclusion area on the substrate 122 and thus increases the yield.

[0036] The spoke mesh 229 is horizontally disposed in the body 202, below and electrically coupled to the active far-edge electrode 119. One or more vertical jumpers couple the spoke mesh 229 and the active far-edge electrode 119. A bias power supply 117 provides RF energy to the active far-edge electrode 119 through the spoke mesh 229. A variable capacitor 217 may be disposed between the bias power supply and the spoke mesh 229. The spoke mesh 229 may additionally serve as an RF electrode in the internal portion 282 of the body 202, rather than one or more clamping electrodes 154. Therefore, while the spoke mesh can be used to tune the contours of the plasma shell above the substrate 122, the spoke mesh 229 does not operate independently of the active far-edge electrode 19 in doing so.

[0037] In one example, the spoke mesh 229 is shaped to have four or six segments radiating outward from the center of the body 202. In another example, the spoke mesh has more than six segments radiating outward from the center of the body 202. In yet another example, the spoke mesh 229 is disc-shaped.

[0038] The spoke mesh 229 is spaced 292 from the active distal edge electrode 119 at a distance of approximately 4 mm to approximately 6 mm, such as approximately 5 mm. The spoke mesh 229 may be spaced from the outer diameter 255 at a distance of approximately 2 mm to approximately 3 mm. For example, the distance 297 between the spoke mesh 229 and the outer diameter 255 may be approximately 2.5 mm.

[0039] The bias power supply 117 prevents membrane damage by using pulses with extremely low duty cycles and pulse frequencies between 0.2 Hz and 20 Hz to achieve bottom-up trench filling. Pulses at the 0.2 Hz to 20 Hz level can be used in PECVD and PEALD processes to fill trenches from the bottom up while preventing the trench sidewalls from closing and thus minimizing the porous membrane.

[0040] The body 202 of the electrostatic chuck 152 further has an RF floating mesh 231 horizontally embedded in the body 202 and positioned below the spoke mesh 229. The RF floating mesh 231 is not electrically coupled to system ground or any power source. In one example, the RF floating mesh 231 is not attached to ground or other circuitry. The RF floating mesh 231 helps filter out harmful RF signals from entering the non-RF environment. The RF floating mesh 231 is positioned between RF heat sources (such as the spoke mesh 229, the active far-edge electrode 119, and the clamping electrode 154) and non-RF thermal features (such as one or more heating elements 249 and the ground mesh 247). The RF floating mesh 231 minimizes the coupling of RF signals from the RF heat sources to the one or more heating elements 249 or the ground mesh 247.

[0041] The RF floating mesh 231 is positioned below the spoke mesh 229 at a distance 293 between approximately 0.5 mm and approximately 2.0 mm. For example, the distance 293 below the spoke mesh 229 is approximately 1.0 mm. The RF floating mesh 231 may also be spaced from the outer diameter 255 by approximately 2 mm to approximately 3 mm. For example, the distance 297 between the RF floating mesh 231 and the outer diameter 255 may be approximately 2.5 mm.

[0042] One or more heating elements 249 are embedded in the body 202, below the spoke mesh 229. The heating elements 249 may be positioned below the RF floating mesh 231 at a distance 294 between approximately 4 mm and approximately 6 mm, such as approximately 5 mm below the RF floating mesh 231. The heating elements 249 extend horizontally within the body 202 to a distance between approximately 1.5 mm and approximately 3 mm from the outer diameter 255 of the body 202. In one example, the distance 297 from which the heating elements 249 extend horizontally within the body 202 is approximately 2.5 mm from the outer diameter 255 of the body 202.

[0043] Heating elements 249 may be arranged in one or more regions to control the temperature of the electrostatic chuck 152. For example, heating elements 249 may be arranged in one, two, or four regions for supplying temperature to the substrate 122. Heating elements 249 are coupled to a power source 248 (such as an AC power source) to power the heating elements 249. One or more heating elements 249 are configured to supply the substrate with a temperature of approximately 200 degrees Celsius to approximately 700 degrees Celsius. For example, electrostatic chuck 152 is configured to operate at temperatures exceeding 600 degrees Celsius (such as approximately 650 degrees Celsius).

[0044] Grounding mesh 247 is embedded in the body 202, below the heating element 249. Grounding mesh 247 is coupled to the system ground. Grounding mesh 247 provides a conduction path for energy (such as energy from plasma) in the electrostatic chuck 152 to guide it to the system ground and prevent arcing between the electrostatic chuck 152 and the sidewall of the processing chamber 100.

[0045] The grounding mesh 247 can be positioned at a distance 295 between approximately 3 mm and approximately 5 mm below the heating element 249, such as approximately 4 mm below the heating element 249. The grounding mesh 247 extends horizontally within the body 202 at a distance 297 between approximately 1.5 mm and approximately 3 mm from the outer diameter 255 of the body 202. In one example, the grounding mesh 247 extends horizontally within the body 202 to approximately 2.5 mm from the outer diameter 255 of the body 202. Furthermore, the grounding mesh 247 can be positioned at a distance 296 between approximately 1.5 mm and approximately 3.5 mm above the second side 224, such as approximately 2.5 mm above the second side 224. This arrangement positions the grounding mesh 247 as the feature closest to the second side 224 (i.e., the bottom surface of ESC 152) within the body 202.

[0046] The embedded grounding mesh 247 prevents RF coupling to plasma ignition in any gaps between the chamber bottom and the grounding shield on the ESC and conventional electrostatic chuck. Plasma ignition can cause undesirable chemical deposition around the heater. The grounding mesh 247 also helps reduce the depth of the processing chamber 100 and thus the internal volume. This reduced volume helps reduce the decontamination time required during PEALD processing.

[0047] In one example, an HV DC power supply is used to electrostatically clamp the substrate 122 onto an electrostatic chuck 152, a heater controller is used to maintain the temperature of the electrostatic chuck 152 at the desired processing temperature, while a thermocouple (also passing through the shaft) provides feedback loop control, and a bias power supply 117 can be used to provide RF bias when required for PEALD and etching / disposal steps.

[0048] Advantageously, the arranged electrostatic chuck 152 can operate at temperatures up to 700 degrees Celsius and has RF bias capability to generate denser plasma at the edge of the wafer. Additionally, a grounding mesh 247 is embedded within the body 202 of the electrostatic chuck 152 to prevent RF coupling with the processing chamber 100. Low-frequency pulses between 0.2 Hz and 20 Hz are provided for the bias power supply source 117, which enhances the deposition density on the substrate for in-situ processing and / or etching.

[0049] Advantageously, the electrostatic chuck 152 can be used for both PECVD / PEALD deposition and in-situ etching / disposal processes, while providing excellent wafer edge coverage using the active far-edge electrode 119. Due to the embedded ground electrode, the electrostatic chuck 152 also has a reduced footprint, which helps prevent plasma lighting in the gap, i.e., arcing, as seen in previous methods of conventional grounding of electrostatic chucks.

[0050] Figure 3 A schematic partial side view of a substrate support 124 according to another example of this disclosure is depicted. The substrate support 124 is substantially as described above with reference to the reference. Figure 2A and 2B As described. In yet another example of the substrate support 124, the cooling base 310 is disposed below the second side of the electrostatic chuck 152.

[0051] The cooling base 310 can be coupled to the electrostatic chuck by mechanical fasteners. For example, the cooling base 310 can be bolted to the electrostatic chuck 152. Alternatively, the cooling base 310 can be coupled to the electrostatic chuck by chemical bonding (such as adhesives) or by diffusion or welding.

[0052] In some examples, the cooling base 310 is made of a conductive material, such as aluminum (Al). In some examples, the cooling base 310 may be coupled to a bias power supply 117. The cooling base 310 may be powered by the bias power supply 117 and serve as an electrode for biased plasma.

[0053] Coolant can flow through the cooling base 310 to reduce the operating temperature of the electrostatic chuck 152. Advantageously, the substrate support described above can be operated at temperatures below 600 degrees Celsius, such as about 200 degrees Celsius.

[0054] While the foregoing relates to the implementation of the present invention, other and further implementations of the present invention may be designed without departing from the basic scope of the present invention, and the scope of the present invention is defined by the following claims.

Claims

1. A substrate support for use in a substrate processing chamber, the substrate support comprising: A ceramic electrostatic chuck, the ceramic electrostatic chuck having a main body, the main body having an outer diameter, a first side, and a second side, the first side being configured as a supporting substrate, the second side being opposite to the first side, wherein the main body comprises: Clamping electrodes; An active far-edge electrode is disposed adjacent to the clamping electrode; A floating mesh is disposed below the clamping electrode; A heating element is disposed below the floating mesh. and A grounding mesh is provided below the heating element, wherein the grounding mesh is adjacent to the second side.

2. The substrate support as claimed in claim 1, wherein the clamping electrode and the active distal edge electrode may be located at a distance of approximately 1.5 mm to approximately 3 mm below the first side.

3. The substrate support as claimed in claim 1, wherein the floating mesh is spaced approximately 2 mm to approximately 3 mm from the outer diameter.

4. The substrate support as claimed in claim 2, wherein the substrate support further comprises: Spoke mesh, the spoke mesh being coupled to the active far-edge electrode and disposed below the active far-edge electrode and the clamping electrode, wherein the floating mesh is disposed below the spoke mesh at a distance between approximately 0.5 mm and approximately 2.0 mm.

5. The substrate support as claimed in claim 3, wherein the heating element is disposed below the floating mesh at a distance between approximately 4 mm and approximately 6 mm.

6. The substrate support as claimed in claim 5, wherein the grounding mesh is disposed below the heating element at a distance between approximately 3 mm and approximately 5 mm.

7. The substrate support as claimed in claim 6, wherein the grounding mesh may be disposed above the second side at a distance between approximately 1.5 mm and approximately 3.5 mm.

8. The substrate support of claim 1, wherein the clamping electrode is configured to supply coupled low-frequency pulses between 0.2 Hz and 20 Hz.

9. The substrate support of claim 8, wherein the active far-edge electrode is configured to operate independently of the clamping electrode.

10. The substrate support of claim 9, wherein the active far-edge electrode is configured to operate from the power source coupled to the clamping electrode.

11. A processing chamber, the processing chamber comprising: The main body of the chamber; and A substrate support member is disposed within the chamber body, and the substrate support member comprises: A ceramic electrostatic chuck, the ceramic electrostatic chuck having a main body, the main body having an outer diameter, a first side, and a second side, the first side being configured as a supporting substrate, the second side being opposite to the first side, wherein the main body comprises: Clamping electrodes; An active far-edge electrode is disposed adjacent to the clamping electrode; A floating mesh is disposed below the clamping electrode; A heating element is disposed below the floating mesh. and A grounding mesh is provided below the heating element, wherein the grounding mesh is adjacent to the second side.

12. The processing chamber of claim 10, wherein the clamping electrode and the active distal edge electrode may be located at a distance of approximately 1.5 mm to approximately 3 mm below the first side.

13. The processing chamber of claim 11, wherein the floating mesh is spaced about 2 mm to about 3 mm from the outer diameter.

14. The processing chamber of claim 12, wherein the processing chamber further comprises: Spoke mesh, the spoke mesh being coupled to the active far-edge electrode and disposed below the active far-edge electrode and the clamping electrode, wherein the floating mesh is disposed below the spoke mesh at a distance between approximately 0.5 mm and approximately 2.0 mm.

15. The processing chamber of claim 12, wherein the heating element is disposed below the floating mesh at a distance between approximately 4 mm and approximately 6 mm.

16. The processing chamber of claim 15, wherein the grounding mesh is disposed below the heating element at a distance between approximately 3 mm and approximately 5 mm.

17. The processing chamber of claim 16, wherein the grounding mesh may be disposed above the second side at a distance between approximately 1.5 mm and approximately 3.5 mm.

18. The processing chamber of claim 11, wherein the processing chamber further comprises: A power source, wherein the power source provides low-frequency pulses between 0.2 Hz and 20 Hz to the clamping electrodes.

19. The processing chamber of claim 17, wherein the active distal edge electrode is configured to operate independently of the clamping electrode.

20. The processing chamber of claim 18, wherein the active far-edge electrode is coupled to the power source.

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