Chemical mechanical polishing device and method based on sound-light-magnetic multi-energy field cooperation
The chemical mechanical polishing device with synergistic acoustic-optical-magnetic multi-energy fields solves the problem that traditional polishing technology cannot achieve both high removal rate and high surface quality. It realizes efficient and low-damage polishing of fourth-generation semiconductor materials and meets the ultra-precision processing requirements of ultra-hard and brittle wafers.
Patent Information
- Application Number
- CN202511251385.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-03
- Publication Date
- 2025-11-21
AI Technical Summary
Traditional chemical mechanical polishing technology cannot achieve both high removal rate and high surface quality at the same interface, and cannot meet the ultra-precision processing requirements of ultra-hard and brittle wafers of fourth-generation semiconductor materials.
A chemical mechanical polishing device employing a synergistic acoustic-optical-magnetic multi-energy field approach is used. An ultrasonic generator generates an acoustic field, a magnetic brush generating component generates a magnetic field, and a catalytic light generator generates a light field. Through their synergistic effect, the abrasive is orderly constrained and the chemical reaction is accelerated, thereby improving material removal efficiency and reducing surface damage.
It achieves efficient, low-damage, and ultra-precision polishing of fourth-generation semiconductor materials, improves material removal efficiency and reduces surface damage, and meets the processing requirements of ultra-hard and brittle wafers.
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Figure CN120985517A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of ultra-precision machining technology, specifically to a chemical mechanical polishing device and method based on the synergy of acoustic-optical-magnetic multi-energy fields. Background Technology
[0002] Fourth-generation semiconductors, represented by diamond, are core materials for high-power electronic devices and applications in extreme environments. However, their ultra-high hardness and brittleness, along with their chemical inertness, make precision polishing of wafers extremely challenging. Traditional chemical mechanical polishing (CMP) often suffers from slow chemical reaction rates, insufficient material removal efficiency, and severe surface damage when meeting requirements for atomic-level flatness and low defect density. Existing single-physics-field or single-process improvement schemes often only address one aspect, making it difficult to simultaneously achieve reaction activation, ordered abrasive grain constraint, and controllable abrasive grain flow at the same interface. This makes it impossible to balance high removal rates and high surface quality, limiting its application in the ultra-precision machining of ultra-hard and brittle wafers. Summary of the Invention
[0003] The present invention aims to at least partially solve one of the technical problems in the related art.
[0004] To this end, embodiments of the present invention propose a chemical mechanical polishing device based on the synergy of acoustic-optical-magnetic multi-energy fields. By integrating acoustic, optical, and magnetic multi-physical fields, it achieves improved reaction rate, orderly constraint of abrasive, and controllable abrasive flow within the polishing area, thereby improving material removal efficiency and reducing surface damage, thus achieving efficient, low-damage, and ultra-precision polishing of ultra-hard and brittle wafers.
[0005] The embodiments of the present invention propose a chemical mechanical polishing method based on the synergy of acoustic-optical-magnetic multi-energy fields.
[0006] According to an embodiment of the present invention, a chemical mechanical polishing apparatus based on acoustic-optical-magnetic multi-energy field synergy includes a mounting frame, a vacuum turntable, a drive assembly, a polishing head, and a catalytic photogenerator. The vacuum turntable is rotatably mounted on the mounting frame, and the rotation axis of the vacuum turntable extends along a first direction. The vacuum turntable has a mounting end and an overflow groove. The vacuum turntable can generate a negative pressure at the mounting end to fix the wafer. The overflow groove is used to hold polishing fluid, and the mounting end is located in the overflow groove so that the polishing fluid immerses the wafer. The drive assembly is mounted on the mounting frame and has a movable end that can move in both the first and second directions, with the first direction perpendicular to the second direction. The polishing head is mounted on the movable end and includes an ultrasonic generator and a magnetic brush generating assembly. The magnetic brush generating assembly has a flow channel, one end of which is used to connect to a polishing fluid supply device, and the other end of the flow channel and the ultrasonic generator both face the mounting end. The catalytic photogenerator is mounted on the mounting frame and faces the mounting end.
[0007] The chemical mechanical polishing device based on the synergistic effect of acoustic-optical-magnetic multi-energy fields in this invention generates an acoustic field through an ultrasonic generator, creating a cavitation effect in the polishing slurry. This directly or indirectly promotes the modification and removal of wafer surface materials by the abrasives in the polishing slurry. A magnetic field is generated by a magnetic brush generating component, forming a magnetorheological brush structure in the polishing slurry to achieve flexible constraint on the abrasive particles. The magnetic field strength of the magnetic brush generating component on the polishing slurry in the overflow tank is adjusted by adjusting the height of the polishing head through a drive component, thereby adjusting the strength of the flexible constraint on the abrasive particles. A light field is generated by a catalytic light generator, causing the photosensitive functional particles in the polishing slurry to produce a photocatalytic effect under extreme ultraviolet light irradiation, further accelerating the interfacial chemical reaction rate. Thus, efficient chemical mechanical polishing under the synergistic effect of acoustic, optical, and magnetic multi-energy fields is achieved.
[0008] In some embodiments, the polishing head further includes a mounting plate connected to the movable end, and the ultrasonic generator is disposed on the mounting plate; the magnetic brush generating assembly includes a magnetic brush generating component and a first driving component, the magnetic brush generating component includes a rotating shaft, a permanent magnet ring, and a flow guide end cap, the rotating shaft is rotatably disposed on the mounting plate, the rotating shaft has a first through hole extending along its axial direction, the flow guide end cap is connected to the rotating shaft, the permanent magnet ring is located between the rotating shaft and the flow guide end cap, the flow guide end cap has a second through hole in its middle, the first through hole and the second through hole communicate to form the flow channel, the flow guide end cap has a plurality of guide grooves, the plurality of guide grooves are evenly arranged around the second through hole; the first driving component is disposed on the side of the mounting plate opposite to the mounting end in the first direction, and the first driving component is drively connected to the rotating shaft.
[0009] In some embodiments, there are two magnetic brush generators, which are symmetrical about the ultrasonic generator axis, and the two rotating shafts rotate in the same direction.
[0010] In some embodiments, the polishing head further includes a housing and a retaining ring, the housing and the retaining ring being respectively disposed on both sides of the mounting plate, the housing being connected to the movable end, the ultrasonic generator and the magnetic brush generator being located inside the retaining ring, and in the first direction, the retaining ring being spaced apart from the guide groove and opposite to the guide end cap;
[0011] In some embodiments, the rotating shaft includes a shaft body and a magnet retaining ring. The shaft body has a third through hole, and the magnet retaining ring has a fourth through hole. The magnet retaining ring is sleeved on the shaft body. The third through hole and the fourth through hole communicate to form the first through hole. The magnet retaining ring has a mounting ring groove, and the permanent magnet is ringed in the mounting ring groove. The flow guide end cap is connected to the magnet retaining ring.
[0012] In some embodiments, the vacuum turntable includes a kit, a hollow spindle, a rotary joint, a mounting base, and a second drive component. The kit is mounted on the mounting frame. The hollow spindle is rotatably mounted on the kit and has a first air passage. The rotary joint is located at one end of the hollow spindle in the first direction and communicates with the first air passage. The rotary joint is used to connect a negative pressure device. The mounting base is located at the other end of the hollow spindle in the first direction. The mounting base has an overflow groove and a mounting groove. The mounting groove forms the mounting end and is used to connect with the wafer. The mounting base has a second air passage. One side of the second air passage communicates with the mounting groove, and the other side of the second air passage communicates with the first air passage to form a negative pressure in the mounting groove and fix the wafer. The second drive component is located on the mounting frame and is drively connected to the hollow spindle.
[0013] In some embodiments, the mounting base includes a rigid base, an elastic base, a retaining ring, and an overflow ring. The retaining ring, the elastic base, and the rigid base are arranged sequentially along the first direction and disposed at the other end of the hollow main shaft. The retaining ring and the elastic base define the mounting groove. The rigid base has a first communicating hole. The elastic base has a plurality of adsorption holes at the mounting groove. The plurality of adsorption holes communicate with the first communicating hole to form the second air passage. The overflow ring is disposed on the rigid base, and the overflow ring and the rigid base define the overflow groove.
[0014] In some embodiments, the mounting base further includes an auxiliary ring disposed within the mounting groove, the outer side of the auxiliary ring engaging with the mounting groove, the inner side of the auxiliary ring being used for engaging with the wafer, and a portion of the plurality of adsorption holes being opposite to the auxiliary ring.
[0015] In some embodiments, the rigid base is provided with a drain hole, and the mounting base further includes a plug, which is detachably disposed in the drain hole.
[0016] In some embodiments, the rigid base includes a connected body portion and a connecting portion, the first connecting hole passing through the body portion and the connecting portion, the body portion having the elastic base and the overflow ring, the connecting portion being annular, the connecting portion being sleeved on the other end of the hollow spindle, the mounting base further including an elastic washer, the elastic washer being disposed between the connecting portion and the other end of the hollow spindle, the elastic washer having a second connecting hole, the second connecting hole connecting the first connecting hole and the first air passage.
[0017] In some embodiments, a portion of the plurality of adsorption holes is a first adsorption hole, and another portion of the plurality of adsorption holes is a second adsorption hole, wherein the first adsorption hole is opposite to the auxiliary ring, and the second adsorption hole is opposite to the wafer.
[0018] In some embodiments, the diameter of the first adsorption pore is larger than the diameter of the second adsorption pore.
[0019] In some embodiments, a plurality of first adsorption holes are distributed at equal intervals along the circumference of the mounting groove to form a first adsorption hole ring, and a plurality of first adsorption hole rings are arranged at equal intervals along the radial direction of the mounting groove. A plurality of second adsorption holes are distributed at equal intervals along the circumference of the mounting groove to form a second adsorption hole ring, and a plurality of second adsorption hole rings are arranged at equal intervals along the radial direction of the mounting groove.
[0020] In some embodiments, the mounting bracket includes a first frame, a worktable, an outer retaining ring, an inner retaining ring, and a guide pipe. The drive assembly and the worktable are both mounted on the first frame. The worktable has a clearance hole. The fitting is inserted through the clearance hole and connected to the worktable. The inner retaining ring and the outer retaining ring are both mounted on the worktable. An annular groove is formed between the inner retaining ring and the outer retaining ring. The clearance hole is located inside the inner retaining ring. The inner retaining ring abuts against the mounting base. The edge of the overflow groove is located inside the annular groove. The bottom of the annular groove communicates with the guide pipe.
[0021] The polishing method of the chemical mechanical polishing device based on acoustic-optical-magnetic multi-energy field synergy according to the present invention includes the following steps:
[0022] S1: The wafer is mounted on the mounting end, the vacuum turntable adsorbs and fixes the wafer, and then the vacuum turntable rotates, thereby driving the wafer to rotate;
[0023] S2: The driving component drives the polishing head to move in the first direction to a preset processing gap position;
[0024] S3: Under a predetermined pressure, polishing slurry is injected into the overflow tank through the flow channel using a polishing slurry supply device, and a magnetorheological brush is formed under the action of the magnetic brush generating component to perform ordered micro-cutting on the wafer surface.
[0025] S4: Start the ultrasonic generator to generate cavitation effect and micro-jet in the polishing fluid, and at the same time start the catalytic photogenerator to irradiate the polishing fluid in the overflow tank to activate the photosensitive functional particles in the polishing fluid.
[0026] S5: The drive component drives the polishing head to move back and forth in the second direction to feed and remove the material on the wafer surface until the set surface quality index is reached. Attached Figure Description
[0027] Figure 1 This is a schematic diagram of the overall structure of the chemical mechanical polishing apparatus according to an embodiment of the present invention;
[0028] Figure 2 This is a cross-sectional view of the vacuum turntable and the first frame according to an embodiment of the present invention;
[0029] Figure 3 This is a cross-sectional view of the vacuum turntable according to an embodiment of the present invention;
[0030] Figure 4 This is a schematic diagram of the mounting base according to an embodiment of the present invention, wherein the overflow ring is not shown;
[0031] Figure 5 This is a schematic diagram of the structure of the second frame and driving component according to an embodiment of the present invention;
[0032] Figure 6 This is a partial structural schematic diagram of the driving component according to an embodiment of the present invention;
[0033] Figure 7 This is a schematic diagram of the polishing head according to an embodiment of the present invention;
[0034] Figure 8 This is a schematic diagram of the structure of the magnetic brush generating assembly, mounting plate, and ultrasonic generator according to an embodiment of the present invention;
[0035] Figure 9 This is a cross-sectional view of the magnetic brush generating assembly, mounting plate, and ultrasonic generator according to an embodiment of the present invention;
[0036] Figure 10 This is a schematic diagram of the flow guide end cap according to an embodiment of the present invention.
[0037] Figure label:
[0038] 100. Chemical mechanical polishing apparatus;
[0039] 1. Mounting frame; 11. First frame; 111. Shelf; 12. Workbench; 13. Outer retaining ring; 14. Inner retaining ring; 15. Guide pipe; 16. Second frame;
[0040] 2. Vacuum turntable; 21. Mounting end; 22. Overflow groove; 23. Assembly piece; 231. Bearing outer sleeve; 232. Upper bearing end cover; 24. Hollow spindle; 241. First air passage; 242. Second synchronous pulley; 25. Rotary joint; 26. Mounting base; 261. Rigid base; 2611. Annular pressure groove; 2612. Connecting groove; 2613. First connecting hole; 2614. Drain hole; 2615. Body part, 2616, connecting part, 262, elastic base, 2621, first adsorption hole, 2622, second adsorption hole, 263, retaining ring, 264, overflow ring, 265, auxiliary ring, 266, liquid baffle ring, 267, second air passage, 268, elastic washer, 2681, second connecting hole, 27, second driving component, 271, first servo motor, 272, reducer, 2721, first synchronous pulley;
[0041] 3. Drive assembly; 31. Second servo motor; 32. Electric thrust cylinder; 33. Transition component; 34. Lifting platform; 35. Third servo motor; 36. Lead screw; 37. Drive block; 38. Feeding table; 39. First guide rail slider assembly; 310. Second guide rail slider assembly.
[0042] 4. Polishing head; 41. Ultrasonic generator; 42. Magnetic brush generating assembly; 421. Magnetic brush generating component; 4211. Rotating shaft; 42111. First through hole; 42112. Shaft body; 42113. Magnet retaining ring; 42114. Fourth synchronous pulley; 4212. Permanent magnet ring; 4213. Guide end cap; 42131. Second through hole; 42132. Guide groove; 422. First driving component; 4221. Third synchronous pulley; 43. Mounting plate; 431. Fifth synchronous pulley; 44. Housing; 45. Material retaining ring;
[0043] 5. Catalytic photogenerator;
[0044] 200. Wafer. Detailed Implementation
[0045] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.
[0046] The following is a reference to the appendix. Figures 1 to 10 The present invention describes in detail the chemical mechanical polishing apparatus 100 and method based on the synergy of acoustic-optical-magnetic multi-energy fields according to embodiments of the present invention.
[0047] The chemical mechanical polishing apparatus 100 based on the synergistic effect of acoustic-optical-magnetic multi-energy fields of this invention includes a mounting frame 1, a vacuum turntable 2, a drive assembly 3, a polishing head 4, and a catalytic photogenerator 5. The vacuum turntable 2 is rotatably mounted on the mounting frame 1, and the rotation axis of the vacuum turntable 2 is along a first direction (e.g., Figure 1 Extending vertically, the vacuum turntable 2 has a mounting end 21 and an overflow groove 22. The vacuum turntable 2 can create a negative pressure at the mounting end 21 to fix the wafer 200. The overflow groove 22 is used to collect polishing fluid, and the mounting end 21 is located in the overflow groove 22 so that the polishing fluid can immerse the wafer 200. The drive assembly 3 is provided on the mounting frame 1. The drive assembly 3 has the ability to operate in a first direction and a second direction (e.g., vertically). Figure 1 The moving end is movable in both the left and right directions, with the first direction perpendicular to the second direction. A polishing head 4 is located on the moving end and includes an ultrasonic generator 41 and a magnetic brush generating assembly 42. The magnetic brush generating assembly 42 has a flow channel; one end of the flow channel is used to connect to a polishing slurry supply device, and the other end of the flow channel and the ultrasonic generator 41 both face the mounting end 21. A catalytic light generator 5 is located on the mounting frame 1, facing the mounting end 21.
[0048] The polishing fluid includes a magnetic phase, an abrasive phase, a base fluid, and additives. The magnetic phase includes iron powder, carbonyl iron powder, and / or iron(II,III) oxide, while the abrasive phase consists of silicon carbide, diamond, and / or aluminum oxide.
[0049] The polishing method using the acoustic-optical-magnetic multi-energy field synergistic chemical mechanical polishing apparatus 100 of this invention includes the following steps:
[0050] S1: The wafer 200 is mounted on the mounting end 21, the vacuum turntable 2 adsorbs and fixes the wafer 200, and then the vacuum turntable 2 rotates, thereby driving the wafer 200 to rotate.
[0051] S2: The drive component 3 drives the polishing head 4 to move in the first direction to the preset processing gap position.
[0052] S3: Under a predetermined pressure, polishing slurry is injected into overflow tank 22 through flow channel using polishing slurry supply equipment, and magnetorheological brush is formed under the action of magnetic brush generating component 42 to perform ordered micro-cutting on the surface of wafer 200.
[0053] S4: Start the ultrasonic generator 41 to generate cavitation effect and microjets in the polishing fluid, and at the same time start the catalytic photogenerator 5 to irradiate the polishing fluid in the overflow tank 22 to activate the photosensitive functional particles in the polishing fluid.
[0054] S5: The drive component 3 drives the polishing head 4 to move back and forth in the second direction to feed and remove the surface material of the wafer 200 until the set surface quality index is reached.
[0055] The chemical mechanical polishing apparatus 100 based on acoustic-optical-magnetic multi-energy field synergy of this invention uses a vacuum turntable 2 to adsorb and fix the wafer 200, keeping the wafer 200 stable during rotation, thereby ensuring stable force on the wafer 200 during polishing. The overflow tank 22 can hold the polishing liquid, forming a polishing area that immerses the wafer 200. The polishing head 4 is equipped with an ultrasonic generator 41 and a magnetic brush generating assembly 42. The polishing liquid flows directionally into the overflow tank 22 through the flow channel of the magnetic brush generating assembly 42. This chemical mechanical polishing (CMP) device 100 forms a magnetorheological brush structure within the gap between the wafer 200 and the polishing head 4 using a magnetic brush generating component 42. This achieves flexible constraint on the abrasive particles. The vertical position of the polishing head 4 can be adjusted by the drive component 3, thereby adjusting the gap between the magnetic brush generating component 42 and the wafer 200 and adjusting the constraint strength of the abrasive particles. An ultrasonic generator 41 drives the variable amplitude end face to vertically vibrate the polishing slurry, generating a cavitation effect in the polishing slurry. This improves the dispersion of abrasive particles in the polishing slurry, promotes the in-situ generation of free radicals to soften the surface material of the wafer 200, and directly impacts the abrasive, driving the abrasive to directly promote the modification and removal of the wafer 200 surface. A catalytic photogenerator 5 catalytically activates the photosensitive functional particles in the polishing slurry, generating a photocatalytic effect that further accelerates the interfacial chemical reaction rate, thus achieving highly efficient CMP under the synergistic effect of multiple energy fields including sound, light, and magnetism.
[0056] The following is a reference to the appendix. Figures 1 to 10 Taking the first direction being the same as the up-down direction and the second direction being the same as the left-right direction as an example, the chemical mechanical polishing device 100 and method based on the synergy of acoustic-optical-magnetic multi-energy fields of the present invention will be described in detail in this embodiment. The up-down direction is as follows: Figures 1 to 9 As shown, the left and right directions are as follows Figure 1 , Figure 2 , Figure 5 and Figure 6 As shown.
[0057] like Figure 1 As shown, the mounting frame 1 includes a first frame 11, a worktable 12, and a second frame 16. The first frame 11, the worktable 12, and the second frame 16 are arranged sequentially from bottom to top. The vacuum turntable 2 is located on the worktable 12, and the drive assembly 3 and the catalytic photogenerator 5 are both located on the second frame 16.
[0058] like Figure 2 and Figure 3 As shown, the vacuum turntable 2 includes a housing 23, a hollow spindle 24, a rotary joint 25, a mounting base 26, and a second drive component 27. The housing 23 is mounted on the mounting frame 1. The hollow spindle 24 is rotatably mounted on the housing 23 and has a first air passage 241. The rotary joint 25 is located at one end (lower end) of the hollow spindle 24 in this first direction and communicates with the first air passage 241. The rotary joint 25 is used to connect a negative pressure device. The mounting base 26 is located at the other end (upper end) of the hollow spindle 24 in this first direction. The mounting base 26 has an overflow groove 22 and a mounting groove. The mounting groove forms a mounting end 21 and is used to mate with and connect to the wafer 200. The mounting base 26 has a second air passage 267. One side (upper side) of the second air passage 267 communicates with the mounting groove, and the other side (lower side) of the second air passage 267 communicates with the first air passage 241 to form a negative pressure in the mounting groove and fix the wafer 200. The second drive component 27 is mounted on the mounting bracket 1 and is connected to the hollow spindle 24 for transmission.
[0059] When mounting wafer 200, it is installed in the mounting slot. The negative pressure device is turned on to evacuate the first air passage 241 and the second air passage 267, so that wafer 200 is adsorbed and fixed in the mounting slot. The second driving component 27 drives the hollow spindle 24 to rotate, thereby driving the mounting base 26 to rotate, realizing the rotation of wafer 200.
[0060] In this embodiment of the invention, the mounting groove is a recess on the mounting base 26. The wafer 200 is fitted into the mounting groove. The shape of the mounting groove matches the wafer 200. The mounting groove can limit the radial movement of the wafer 200 and prevent the wafer 200 from moving tangentially during the polishing process. This further ensures that the wafer 200 remains stable during rotation and that the wafer 200 is stably stressed during polishing.
[0061] In some embodiments, such as Figure 3 and Figure 4 As shown, the mounting base 26 includes a rigid base 261, an elastic base 262, a retaining ring 263, and an overflow ring 264. The retaining ring 263, the elastic base 262, and the rigid base 261 are arranged sequentially along a first direction and are located at the other end of the hollow main shaft 24. The retaining ring 263 and the elastic base 262 define a mounting groove. The rigid base 261 is provided with a first connecting hole 2613. The elastic base 262 is provided with a plurality of adsorption holes at the mounting groove. The plurality of adsorption holes and the first connecting hole 2613 are connected to form a second air passage 267. The overflow ring 264 is located on the rigid base 261, and the overflow ring 264 and the rigid base 261 define an overflow groove 22.
[0062] The rigid base 261 has a certain rigidity and strength, which can ensure the stability and reliability of the connection between the elastic base 262, the retaining ring 263 and the overflow ring 264 and the hollow spindle 24. The elastic base 262 has a certain elasticity and flexible buffering characteristics. When the wafer 200 is adsorbed under negative pressure, the elastic base 262 absorbs the local stress between itself and the wafer 200 through its own deformation to prevent the brittle wafer 200 from breaking.
[0063] In some embodiments, such as Figure 4 As shown, the mounting base 26 further includes an auxiliary ring 265, which is disposed within the mounting groove. The outer side of the auxiliary ring 265 mates with the mounting groove, and the inner side of the auxiliary ring 265 is used to connect with the wafer 200. A portion of the multiple adsorption holes are opposite to the auxiliary ring 265. When a negative pressure is formed in the mounting groove, the vacuum turntable 2 simultaneously adsorbs and fixes the auxiliary ring 265 and the wafer 200, maintaining the inner side of the ring 263 in a radially limiting position on the auxiliary ring 265 to ensure the stability of the auxiliary ring 265. The inner side of the auxiliary ring 265 also in a radially limiting position on the wafer 200 to ensure the stability of the wafer 200.
[0064] Because the diameter of the wafer 200 is small, the mounting groove indirectly radially limits the wafer 200 through the auxiliary ring 265 to ensure the stability of the wafer 200. This avoids the need to set a smaller inner diameter of the retaining ring 263 to accommodate the wafer 200. At the same time, the appropriate auxiliary ring 265 can be selected according to the specific size of the wafer 200 without replacing the retaining ring 263. This improves the adaptability of the mounting base 26 to wafers 200 of different sizes and enhances the adaptability of the chemical mechanical polishing apparatus 100 of this embodiment of the invention.
[0065] In some embodiments, a portion of the plurality of adsorption holes is a first adsorption hole 2621, and another portion of the plurality of adsorption holes is a second adsorption hole 2622. The first adsorption hole 2621 is opposite to the auxiliary ring 265, and the second adsorption hole 2622 is opposite to the wafer 200.
[0066] The diameter of the first adsorption hole 2621 is larger than the diameter of the second adsorption hole 2622, thereby forming different negative pressure adsorption forces on the wafer 200 and the auxiliary ring 265, ensuring the stability of the negative pressure adsorption fixation of the auxiliary ring 265 and ensuring the safety of the negative pressure adsorption fixation of the wafer 200.
[0067] Multiple first adsorption holes 2621 are evenly distributed circumferentially along the mounting groove to form a first adsorption hole ring. These first adsorption hole rings are also evenly distributed radially along the mounting groove. The uniform circumferential and radial distribution of the first adsorption holes 2621 ensures uniform adsorption force distribution, balanced force on the auxiliary ring 265, and stability of the auxiliary ring 265, further guaranteeing the reliability of the radial positioning of the wafer 200 by the auxiliary ring 265. Similarly, multiple second adsorption holes 2622 are evenly distributed circumferentially along the mounting groove to form a second adsorption hole ring. These second adsorption hole rings are also evenly distributed radially along the mounting groove. The uniform circumferential and radial distribution of the second adsorption holes 2622 ensures uniform adsorption force distribution, balanced force on the wafer 200, and further improves the stability of the vacuum turntable 2 in fixing the wafer 200.
[0068] Specifically, the rigid base 261 is provided with multiple annular pressure grooves 2611 and multiple connecting grooves 2612. Multiple first adsorption rings and multiple second adsorption rings correspond one-to-one with the multiple annular pressure grooves 2611 and are connected. The first connecting hole 2613 is located in the middle of the rigid base 261. Adjacent annular pressure grooves 2611 are connected through multiple connecting grooves 2612. The first connecting hole 2613 and the adjacent annular pressure groove 2611 are connected through multiple connecting grooves 2612. Multiple interconnected slots 2612 located on the same circumferential direction are evenly distributed, so that the airflow is evenly distributed between the multiple adsorption holes of the elastic base 262 and the second air passage 267 of the rigid base 261. Thus, when the negative pressure equipment is evacuating, it can achieve uniform air extraction from the multiple first adsorption holes 2621 and the multiple second adsorption holes 2622, ensuring that the adsorption force of the multiple first adsorption holes 2621 and the multiple second adsorption holes 2622 is balanced. This further ensures the uniform force on the wafer 200 and the uniform force on the auxiliary ring 265, and further ensures the stability of the vacuum turntable 2 in fixing the wafer 200.
[0069] In some embodiments, the rigid base 261 includes a connected body portion 2615 and a connecting portion 2616, a first connecting hole 2613 passing through the body portion 2615 and the connecting portion 2616, and an elastic base 262 and an overflow ring 264 provided on the body portion 2615. Figure 3As shown, the main body 2615 is located above the connecting part 2616. The upper surface of the main body 2615 is provided with multiple annular pressure grooves 2611 and multiple connecting grooves 2612. The connecting part 2616 is annular and is fitted onto the other end (upper end) of the hollow main shaft 24. The mounting base 26 further includes an elastic washer 268, which is disposed between the connecting part 2616 and the other end of the hollow main shaft 24. The elastic washer 268 has a second connecting hole 2681, which connects to the first connecting hole 2613 and the first air passage 241. The elastic washer 268 has a certain elasticity, enabling it to seal between the connecting part 2616 and the hollow main shaft 24, and to seal the connection between the upper end of the first air passage 241 and the lower end of the second air passage 267, preventing air leakage and thus ensuring the negative pressure adsorption effect of the first adsorption hole 2621 and the second adsorption hole 2622.
[0070] Specifically, the elastic washer 268 is made of rubber.
[0071] In some embodiments, the rigid base 261 is provided with a drain hole 2614. Specifically, the body portion 2615 of the rigid base 261 is provided with a drain hole 2614, which is spaced apart from the retaining ring 263 and extends along the first direction. The mounting base 26 further includes a plug (not shown in the figure), which is detachably disposed in the drain hole 2614. When the plug is installed in the drain hole 2614, the drain hole 2614 is closed, and the polishing fluid in the overflow tank 22 flows out from the upper side of the overflow ring 264 after reaching the height of the upper side of the overflow ring 264. When the plug is pulled out from the drain hole 2614, the drain hole 2614 opens, and the polishing fluid can be discharged from the drain hole 2614. Thus, the liquid level of the polishing fluid in the overflow tank 22 can be adjusted by adjusting the supply flow rate of the polishing fluid, thereby controlling the depth of the wafer 200 in the polishing fluid.
[0072] Specifically, such as Figure 2As shown, the first frame 11 has a shelf 111 in the middle. The second drive component 27 includes a first servo motor 271 and a reducer 272. The first servo motor 271 is connected to the reducer 272. The reducer 272 is mounted on the shelf 111. The output shaft of the reducer 272 is equipped with a first synchronous pulley 2721. The assembly 23 includes a bearing outer sleeve 231 and an upper bearing end cover 232. The hollow spindle 24 is rotatably mounted inside the bearing outer sleeve 231. The upper bearing end cover 232 is mounted on the upper end of the bearing outer sleeve 231. The worktable 12 has a clearance hole. The bearing outer sleeve is located in the clearance hole. The upper bearing end cover 232 is fixedly connected to the worktable 12. The lower end of the hollow spindle 24 is equipped with a second synchronous pulley 242. The first synchronous pulley 2721 and the second synchronous pulley 242 are at the same height. The first synchronous pulley 2721 and the second synchronous pulley 242 are connected by a first synchronous belt (not shown in the figure). After the first servo motor 271 is turned on, it drives the first synchronous pulley 2721 to rotate through the reducer 272. The first synchronous pulley 2721 drives the second synchronous pulley 242 to rotate through the first synchronous belt, thereby driving the hollow main shaft 24 to rotate and realizing the rotation of the vacuum turntable 2.
[0073] See Figure 2 The mounting bracket 1 includes an outer retaining ring 13, an inner retaining ring 14, and a guide pipe 15. Both the inner retaining ring 14 and the outer retaining ring 13 are mounted on the workbench 12. An annular groove is formed between the inner retaining ring 14 and the outer retaining ring 13. The clearance hole is located inside the inner retaining ring 14. The inner retaining ring 14 abuts against the mounting base 26. The edge of the overflow groove 22 is located inside the annular groove. The bottom of the annular groove is connected to the guide pipe 15.
[0074] The outer baffle ring 13 is higher than the overflow ring 264, which shields the polishing fluid during polishing operations to prevent splashing. When the polishing fluid overflows from the overflow tank 22, it flows into the ring groove and then exits the vacuum turntable 2 through the guide pipe 15. Specifically, the end of the guide pipe 15 is connected to the polishing fluid supply equipment for recycling the polishing fluid.
[0075] Furthermore, the mounting base 26 includes a liquid-retaining ring 266, which is installed on the lower side of the rigid base 261. The liquid-retaining ring 266 is fitted to the outer side of the inner retaining ring 14, and the liquid-retaining ring 266 abuts against the inner retaining ring 14 to form a seal. This prevents the polishing liquid from flowing outward and downward from the inner retaining ring 14 and causing adverse effects on the bearing end cap and other structures of the vacuum turntable 2 when the amount of polishing liquid in the ring groove increases due to problems such as increased polishing liquid supply, blockage of the guide pipe 15, or splashing of polishing liquid.
[0076] like Figure 5 and Figure 6As shown, the drive assembly 3 includes a second servo motor 31, an electric thrust cylinder 32, a transition piece 33, a lifting platform 34, a third servo motor 35, a lead screw 36, a drive block 37, a feed plate 38, a first guide rail slider assembly 39, and a second guide rail slider assembly 310. The second servo motor 31 is connected to the electric thrust cylinder 32, which is located at the upper end of the second frame 16. The telescopic end of the electric thrust cylinder 32 is provided with a transition piece 33, and both sides of the lower end of the transition piece 33 are connected to the lifting platform 34. An arched groove is provided in the middle of the lower end of the transition piece 33, and a strip-shaped hole is provided in the middle of the lifting platform 34. A first guide rail slider assembly 39 is provided between the lifting platform 34 and the second frame 16 to guide and limit the movement of the lifting platform 34 in the vertical direction, ensuring the stability of the movement of the lifting platform 34 in the vertical direction. The third servo motor 35 is mounted on the lifting platform 34. A lead screw 36 is rotatably mounted on the upper side of the lifting platform 34, located within an arched groove. The third servo motor 35 is connected to the lead screw 36 via a transmission connection. A drive block 37 is mounted on the lead screw 36. The lower side of the drive block 37 is connected to a feed plate 38 through a slotted hole. The feed plate 38 forms a moving end, and a polishing head 4 is mounted on its lower side. A second guide rail slider assembly 310 is provided between the upper side of the feed plate 38 and the lower side of the lifting platform 34 to guide and limit the left and right movement of the feed plate 38, ensuring the stability of its movement in the left and right directions. The drive assembly 3 drives the polishing head 4 to move up and down, moving it to a preset processing gap position. For example, the drive assembly 3 moves the polishing head 4 to a position 3mm away from the wafer. The drive assembly 3 controls the left and right feed of the polishing head 4.
[0077] Furthermore, the catalytic light generator 5 is mounted on the second frame 16. The catalytic light generator 5 is an extreme ultraviolet light generator. When the extreme ultraviolet light generator is turned on, it emits extreme ultraviolet light. The extreme ultraviolet light irradiates the polishing liquid, activates the photosensitive functional particles in the polishing liquid to generate oxidative free radicals, thereby enhancing the interfacial chemical reaction rate and improving the polishing efficiency.
[0078] In some embodiments, such as Figures 7 to 10 As shown, the polishing head 4 includes an ultrasonic generator 41, a magnetic brush generating assembly 42, and a mounting plate 43. The mounting plate 43 is connected to the moving end, and the ultrasonic generator 41 is mounted on the mounting plate 43. The ultrasonic generator 41 creates a cavitation effect in the polishing slurry, which promotes the modification and removal of the surface material of the wafer 200 by the abrasive, while improving the dispersion state of the abrasive and promoting the generation of oxidative free radicals.
[0079] The magnetic brush generating assembly 42 includes a magnetic brush generating component 421 and a first driving component 422. The magnetic brush generating component 421 includes a rotating shaft 4211, a permanent magnet ring 4212, and a flow guide end cap 4213. The rotating shaft 4211 is rotatably mounted on the mounting plate 43. The rotating shaft 4211 has a first through hole 42111 extending along its axial direction. The flow guide end cap 4213 is connected to the rotating shaft 4211. The permanent magnet ring 4212 is located between the rotating shaft 4211 and the flow guide end cap 4213. The flow guide end cap 4213 has a second through hole 42131 in the middle. The first through hole 42111 and the second through hole 42131 communicate to form a flow channel. The flow guide end cap 4213 has a plurality of guide grooves 42132, which are evenly arranged around the second through hole 42131. The first driving member 422 is located on the side of the mounting plate 43 away from the mounting end 21 in the first direction, and the first driving member 422 is connected to the rotating shaft 4211 for transmission.
[0080] The upper end of the rotating shaft 4211 is used to connect to the polishing slurry supply equipment. The polishing slurry flows from the first through hole 42111 to the second through hole 42131. As the rotating shaft 4211 rotates, the polishing slurry flows out from the outlet of the second through hole 42131, flows along the guide groove 42132, and is then thrown out from the guide groove 42132, flowing into the polishing gap between the wafer 200 and the polishing head 4. The permanent magnet ring 4212 drives the magnetic particles in the polishing slurry to arrange along the magnetic lines of force, self-assembling into a magnetic brush at the interface. This achieves flexible constraint on the abrasive particles and adaptive fitting to the microstructure of the wafer, improving polishing accuracy and reducing brittle damage. With the help of the hollow slurry supply and rotational motion of the rotating shaft 4211, the guide groove 42132 on the guide end cap 4213 guides the polishing slurry to form a controllable abrasive flow. An abrasive flow with a certain pressure is formed in the gap between the polishing head 4 and the wafer 200, ensuring the continuous supply and renewal of the polishing slurry, thereby achieving effective material removal and improving processing stability.
[0081] In this embodiment of the invention, the polishing head 4 rotates at high speed during the polishing operation. The ultrasonic generator 41 induces the cavitation effect of the polishing fluid to reduce the energy barrier for surface material removal. At the same time, combined with the flexible shearing of the magnetic brush and the abrasive flow, it achieves the squeezing and scratching of the surface of the wafer 200, thereby achieving efficient and low-damage removal of the surface material of the wafer 200.
[0082] Furthermore, the guide groove 42132 is arc-shaped, and the arc-shaped guide groove 42132 is relatively long, so that the trajectory formed by the polishing liquid flowing through the guide groove 42132 is longer, which can prolong the effective action time of the abrasive grains and improve the processing efficiency of the polishing head 4.
[0083] In some embodiments, there are two magnetic brush generators 421, which are symmetrical about the ultrasonic generator 41, and the two rotating shafts 4211 rotate in the same direction. The ultrasonic generator 41 is located directly above the wafer 200. Since the two magnetic brush generators 421 are symmetrical about the ultrasonic generator 41, during the polishing process of the polishing head 4 in the left-right direction, the two magnetic brush generators 421 have the same polishing speed on both sides of the wafer 200, which can improve the uniformity of the polishing of the wafer 200 surface.
[0084] In some embodiments, the rotating shaft 4211 includes a shaft body 42112 and a magnet retaining ring 42113. The shaft body 42112 has a third through hole, and the magnet retaining ring 42113 has a fourth through hole. The magnet retaining ring 42113 is sleeved on the shaft body 42112. The third through hole and the fourth through hole communicate to form a first through hole 42111. The magnet retaining ring 42113 has a mounting ring groove, and the permanent magnet ring 4212 is disposed in the mounting ring groove. The flow guide end cap 4213 is connected to the magnet retaining ring 42113. The permanent magnet ring 4212 is fixed in the mounting ring groove of the magnet retaining ring 42113 by the flow guide end cap 4213, realizing the connection between the permanent magnet ring 4212 and the rotating shaft 4211. Its connection structure is simple and easy to process and manufacture.
[0085] Specifically, the first driving component 422 is a fourth servo motor, which is located on the upper side of the mounting plate 43. The output end of the fourth servo motor is provided with a third synchronous pulley 4221, and the upper side of the shaft 42112 of the rotating shaft 4211 is provided with a fourth synchronous pulley 42114. A fifth synchronous pulley 431 is rotatably provided on the mounting plate 43. The third synchronous pulley 4221, the two fourth synchronous pulleys 42114 and the fifth synchronous pulley 431 are located at the same height and are connected by a second synchronous belt (not shown in the figure). When the fourth servo motor is turned on, it drives the third synchronous pulley 4221 to rotate. The third synchronous pulley 4221 drives the two fourth synchronous pulleys 42114 to rotate through the second synchronous belt, thereby driving the two magnetic brush generators 421 to rotate.
[0086] In some embodiments, the polishing head 4 further includes a housing 44 and a retaining ring 45, which are respectively disposed on both sides of the mounting plate 43. The housing 44 is connected to the moving end. The ultrasonic generator 41 and the magnetic brush generator 421 are both located inside the retaining ring 45. In the first direction, the retaining ring 45 is spaced apart from the guide groove 42132 and opposite to the guide end cap 4213.
[0087] like Figure 7As shown, the upper end of the outer casing 44 is connected to the feed table 38, and the lower end of the outer casing 44 is connected to the mounting plate 43. The lower side of the mounting plate 43 is connected to the retaining ring 45. In the left-right direction, the retaining ring 45 is opposite to the magnetic pole cover plate, and the lower side of the retaining ring 45 is located above the bottom of the guide groove 42132. The retaining ring 45 does not affect the flow of polishing liquid from the magnetic pole cover plate, does not affect the polishing process, and can also block the upward and outward splashing of polishing liquid after polishing and during the upward movement of the polishing head 4.
[0088] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0089] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0090] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0091] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0092] In this invention, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0093] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.
Claims
1. A chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy, characterized in that, include: Mounting bracket (1); A vacuum turntable (2) is rotatably mounted on the mounting frame (1). The rotation axis of the vacuum turntable (2) extends along a first direction. The vacuum turntable (2) has a mounting end (21) and an overflow groove (22). The vacuum turntable (2) can generate a negative pressure at the mounting end (21) to fix the wafer (200). The overflow groove (22) is used to hold polishing fluid. The mounting end (21) is located in the overflow groove (22) so that the polishing fluid can immerse the wafer (200). A drive assembly (3) is disposed on the mounting bracket (1). The drive assembly (3) has a movable end that is movable in both a first direction and a second direction, wherein the first direction is perpendicular to the second direction. Polishing head (4), the polishing head (4) is disposed on the moving end, the polishing head (4) includes an ultrasonic generator (41) and a magnetic brush generating assembly (42), the magnetic brush generating assembly (42) is provided with a flow channel, one end of the flow channel is used to connect to a polishing liquid supply device, and the other end of the flow channel and the ultrasonic generator (41) are both facing the mounting end (21); and A catalytic light generator (5) is mounted on the mounting bracket (1) and faces the mounting end (21).
2. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 1, characterized in that, The polishing head (4) also includes a mounting plate (43), which is connected to the movable end, and the ultrasonic generator (41) is mounted on the mounting plate (43); The magnetic brush generating assembly (42) includes: A magnetic brush generator (421) includes a rotating shaft (4211), a permanent magnet ring (4212), and a flow guide end cap (4213). The rotating shaft (4211) is rotatably mounted on the mounting plate (43). The rotating shaft (4211) has a first through hole (42111) extending along its axial direction. The flow guide end cap (4213) is connected to the rotating shaft (4211). The permanent magnet ring (4212)... Located between the rotating shaft (4211) and the flow guide end cap (4213), the flow guide end cap (4213) has a second through hole (42131) in its middle. The first through hole (42111) and the second through hole (42131) communicate to form the flow channel. The flow guide end cap (4213) has multiple guide grooves (42132), which are evenly arranged around the second through hole (42131). A first driving member (422) is disposed on the side of the mounting plate (43) facing away from the mounting end (21) in the first direction, and the first driving member (422) is connected to the rotating shaft (4211) in a transmission connection.
3. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 2, characterized in that, There are two magnetic brush generators (421), which are symmetrical about the ultrasonic generator (41) and the two rotating shafts (4211) rotate in the same direction.
4. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 2, characterized in that, The polishing head (4) also includes a housing (44) and a retaining ring (45). The housing (44) and the retaining ring (45) are respectively disposed on both sides of the mounting plate (43). The housing (44) is connected to the moving end. The ultrasonic generator (41) and the magnetic brush generator (421) are both located inside the retaining ring (45). In the first direction, the retaining ring (45) is spaced apart from the guide groove (42132) and is opposite to the guide end cap (4213). And / or, The rotating shaft (4211) includes a shaft body (42112) and a magnet retaining ring (42113). The shaft body (42112) has a third through hole, and the magnet retaining ring (42113) has a fourth through hole. The magnet retaining ring (42113) is sleeved on the shaft body (42112). The third through hole and the fourth through hole are connected to form the first through hole (42111). The magnet retaining ring (42113) has a mounting ring groove. The permanent magnet ring (4212) is disposed in the mounting ring groove. The flow guide end cap (4213) is connected to the magnet retaining ring (42113).
5. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 1, characterized in that, The vacuum turntable (2) includes: A kit (23) is mounted on the mounting bracket (1); A hollow spindle (24) is rotatably mounted on the assembly (23) and has a first air passage. Rotary joint (25), the rotary joint (25) is located at one end of the hollow main shaft (24) in the first direction and communicates with the first air passage, the rotary joint (25) is used to connect a negative pressure device; Mounting base (26), the mounting base (26) is located at the other end of the hollow spindle (24) in the first direction, the mounting base (26) is provided with the overflow groove (22) and the mounting groove, the mounting groove forms the mounting end (21) and is used to mate with the wafer (200), the mounting base (26) is provided with a second air passage, one side of the second air passage is connected to the mounting groove, and the other side of the second air passage is connected to the first air passage to form a negative pressure in the mounting groove and fix the wafer (200); and The second drive member (27) is mounted on the mounting bracket (1) and is connected to the hollow spindle (24) for transmission.
6. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 5, characterized in that, The mounting base (26) includes a rigid base (261), an elastic base (262), a retaining ring (263), and an overflow ring (264). The retaining ring (263), the elastic base (262), and the rigid base (261) are arranged sequentially along the first direction and located at the other end of the hollow main shaft (24). The retaining ring (263) and the elastic base (262) define the mounting groove. The rigid base (261) is provided with a first connecting hole (2613). The elastic base (262) is provided with a plurality of adsorption holes at the mounting groove. The plurality of adsorption holes and the first connecting hole (2613) are connected to form the second air passage. The overflow ring (264) is located on the rigid base (261). The overflow ring (264) and the rigid base (261) define the overflow groove (22).
7. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 6, characterized in that, The mounting base (26) further includes an auxiliary ring (265), which is disposed in the mounting groove. The outer side of the auxiliary ring (265) cooperates with the mounting groove, and the inner side of the auxiliary ring (265) is used to cooperate with the wafer (200). A portion of the plurality of adsorption holes are opposite to the auxiliary ring (265). And / or, the rigid base (261) is provided with a drain hole (2614), and the mounting base (26) further includes a plug, which is detachably disposed in the drain hole (2614); And / or, the rigid base (261) includes a connected body portion (2615) and a connecting portion (2616), the first connecting hole (2613) passes through the body portion (2615) and the connecting portion (2616), the body portion (2615) is provided with the elastic base (262) and the overflow ring (264), the connecting portion (2616) is annular, the connecting portion (2616) is sleeved on the other end of the hollow spindle (24), the mounting base (26) further includes an elastic washer (268), the elastic washer (268) is provided between the connecting portion (2616) and the other end of the hollow spindle (24), the elastic washer (268) is provided with a second connecting hole (2681), the second connecting hole (2681) connects the first connecting hole (2613) and the first air passage.
8. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 7, characterized in that, A portion of the plurality of adsorption holes is a first adsorption hole (2621), and another portion of the plurality of adsorption holes is a second adsorption hole (2622). The first adsorption hole (2621) is opposite to the auxiliary ring (265), and the second adsorption hole (2622) is opposite to the wafer (200). The diameter of the first adsorption pore (2621) is larger than the diameter of the second adsorption pore (2622); And / or, a plurality of first adsorption holes (2621) are distributed at equal intervals along the circumference of the mounting groove to form a first adsorption hole ring, a plurality of first adsorption hole rings are arranged at equal intervals along the radial direction of the mounting groove, a plurality of second adsorption holes (2622) are distributed at equal intervals along the circumference of the mounting groove to form a second adsorption hole ring, and a plurality of second adsorption hole rings are arranged at equal intervals along the radial direction of the mounting groove.
9. The chemical mechanical polishing device (100) based on acoustic-optical-magnetic multi-energy field synergy according to claim 5, characterized in that, The mounting bracket (1) includes a first frame (11), a workbench (12), an outer retaining ring (13), an inner retaining ring (14), and a guide pipe (15). The drive assembly (3) and the workbench (12) are both mounted on the first frame (11). The workbench (12) is provided with a clearance hole. The fitting (23) passes through the clearance hole and is connected to the workbench (12). The inner retaining ring (14) and the outer retaining ring (13) are both mounted on the workbench (12). An annular groove is formed between the inner retaining ring (14) and the outer retaining ring (13). The clearance hole is located inside the inner retaining ring (14). The inner retaining ring (14) abuts against the mounting base (26). The edge of the overflow groove (22) is located inside the annular groove. The bottom of the annular groove is connected to the guide pipe (15).
10. A polishing method based on the chemical mechanical polishing apparatus (100) based on the synergistic acoustic-optical-magnetic multi-energy field as described in any one of claims 1-9, characterized in that, Includes the following steps: S1: The wafer (200) is mounted on the mounting end (21), the vacuum turntable (2) adsorbs and fixes the wafer (200), and then the vacuum turntable (2) rotates, thereby driving the wafer (200) to rotate; S2: The driving component (3) drives the polishing head (4) to move in the first direction to the preset processing gap position; S3: Under a predetermined pressure, polishing slurry is injected into the overflow tank (22) through the flow channel using a polishing slurry supply device, and a magnetorheological brush is formed under the action of the magnetic brush generating component (42) to perform ordered micro-cutting on the surface of the wafer (200); S4: Start the ultrasonic generator (41) to generate cavitation effect and micro-jet in the polishing fluid, and at the same time start the catalytic photogenerator (5) to irradiate the polishing fluid in the overflow tank (22) to activate the photosensitive functional particles in the polishing fluid. S5: The drive component (3) drives the polishing head (4) to move back and forth in the second direction to feed and remove the surface material of the wafer (200) until the set surface quality index is reached.