A partition temperature control quartz reaction cavity for silicon epitaxial growth

Abstract

The application discloses a partition temperature control quartz reaction cavity for silicon epitaxial growth and relates to the technical field of quartz reaction cavities.The cavity comprises a cavity chamber, a gas supply seat is arranged on the top of the cavity chamber, and an exhaust port is arranged at the bottom of the cavity chamber; the cavity further comprises a carrier, the carrier comprises a base, the base is arranged in the cavity chamber, a surrounding fence is arranged on the upper surface edge of the base, a plurality of first blocking rings are fixedly connected to the lower surface of the base and are distributed in the radial direction at intervals, a supporting shaft is connected to the lower part of the base and is used for supporting and driving the base to rotate, and a floating adjustment assembly is arranged between the base and the supporting shaft, the floating adjustment assembly has high stability and small disturbance.

Description

Technical Field

[0001] This invention relates to the field of quartz reaction chamber technology, and more specifically to a zoned temperature-controlled quartz reaction chamber for silicon epitaxial growth. Background Technology

[0002] In existing silicon epitaxial growth technologies, traditional chamber structures have fundamental limitations, such as the lack of key physical isolation components. This allows reactive gases to directly act on the joints of the moving mechanisms, causing a large amount of byproducts to accumulate at the bottom of the chamber and on the surface of the supporting components. Continuous deposition causes the moving mechanisms to jam and deteriorate rotational accuracy.

[0003] Furthermore, in the area of ​​specific structural protection measures (such as injecting protective gas into the carrier support area), although gas injection is used to suppress deposition, the lack of an effective gas isolation and recovery mechanism leads to the disorderly diffusion of excess protective gas into the main deposition area. This causes forced dilution of the reaction atmosphere. The cascading effects include unintended attenuation of the deposition rate, dispersion of epitaxial layer thickness distribution across wafers, and a decline in doping concentration uniformity.

[0004] Therefore, it is necessary to provide a partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth to solve the above problems. Summary of the Invention

[0005] To solve the above problems, the present invention provides the following technical solution: a partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth, comprising a chamber, a gas supply seat at the top of the chamber, and an exhaust port at the bottom of the chamber, and further comprising:

[0006] The vehicle includes:

[0007] A base is placed inside the cavity, and a barrier is provided on the edge of the upper surface of the base;

[0008] Multiple first retaining rings are fixedly connected to the lower surface of the base and are distributed at intervals in the radial direction;

[0009] A support shaft, connected to the lower part of the base, is used to support and drive the base to rotate;

[0010] A floating adjustment component is disposed between the base and the support shaft.

[0011] Furthermore, preferably, there is a first gap between the bottom end of the first retaining ring and the inner bottom surface of the chamber;

[0012] The inner bottom surface of the chamber is fixedly connected with a plurality of third retaining rings that are radially spaced apart. There is a second gap between the top of the third retaining ring and the bottom surface of the base, and the size of the first gap is equal to the size of the second gap.

[0013] The first retaining rings and the third retaining rings are arranged in an alternating pattern in the radial direction.

[0014] Furthermore, preferably, the carrier further includes a second retaining ring, which is fixed to the bottom of the base;

[0015] The second retaining ring is located further outward in the radial direction than either of the first retaining rings, and its length is greater than that of either of the first retaining rings.

[0016] Furthermore, as a preferred embodiment, a base is provided below the chamber, and the base has an upper opening for communicating with the chamber;

[0017] The support shaft passes through the base and is rotatably connected to the base;

[0018] A telescopic rod is fixedly connected to the base;

[0019] The telescopic end of the telescopic rod is fixedly connected to a connecting ring, which is rotatably connected to the support shaft.

[0020] Furthermore, preferably, the floating adjustment component can be adjusted to either a locked state or a floating state relative to the support shaft;

[0021] When the base is floating relative to the support shaft, the telescopic rod can drive the support shaft and the base to move downward, so that the second retaining ring abuts against the inner bottom surface of the chamber.

[0022] Furthermore, preferably, the floating adjustment component includes:

[0023] A connecting seat is fixedly connected to a support shaft, and a support column is fixedly mounted on the connecting seat.

[0024] A sliding ball seat is slidably fitted onto a support column;

[0025] An elastic element is provided between the sliding ball seat and the support column;

[0026] A support base is fixedly connected to a sliding ball seat, and the support base is used to support the connecting base;

[0027] At least two symmetrically arranged clamping seats;

[0028] The hinged arm hinges the clamping seat to the connecting seat;

[0029] The telescopic device, mounted on the connecting seat, can drive at least two clamping seats to deflect around the hinge arm.

[0030] Furthermore, preferably, the number of the first retaining rings is one more than the number of the third retaining rings, so that each third retaining ring has a first retaining ring distributed on both sides in the radial direction;

[0031] A heating ring is provided in the third retaining ring.

[0032] Furthermore, as a preferred embodiment, the vehicle also has multiple nozzles and a built-in air supply pipe;

[0033] Multiple nozzles are circumferentially spaced on the support shaft, corresponding to the positions of the first retaining ring;

[0034] The air supply pipe is built into the support shaft and connected to the air inlet of the nozzle;

[0035] The nozzle sprays air towards the connection between the first retaining ring and the base;

[0036] Multiple air collection holes are provided at the bottom of the chamber near the support shaft, and the multiple air collection holes correspond to the multiple nozzles in position.

[0037] Furthermore, as a preferred embodiment, a collection chamber is provided on the outer side of the base, the collection chamber covering the air collection hole and communicating with the air collection hole;

[0038] The collection chamber is equipped with an interface for connecting to the detector.

[0039] Compared with the prior art, the present invention provides a partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth, which has the following advantages:

[0040] In this invention, the labyrinthine structure formed by the staggered baffle rings (first baffle ring and third baffle ring) below the base and at the bottom of the chamber effectively controls the flow path of the reactant gas, increases the flow resistance to the gap region, and significantly suppresses the adhesion of byproducts in key areas. Simultaneously, the heat insulation design between the baffle rings ensures that the temperature of each heating zone is independently controllable, avoiding temperature interference.

[0041] In this invention, a local high-pressure turbulent zone is formed by the nozzle, the first baffle ring and other structures to prevent the reaction gas from entering it, and by-products are effectively discharged in conjunction with the gas collection hole.

[0042] In this invention, a floating adjustment component enables dual-mode switching of the base, ensuring high-precision rotation control during the growth process and enabling adaptive cleaning during the maintenance phase. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of a partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth.

[0044] Figure 2 for Figure 1 A magnified structural diagram at point A;

[0045] Figure 3 This is a schematic diagram of the floating adjustment component.

[0046] Figure 4 This is a schematic diagram showing the flow direction of the auxiliary gas;

[0047] In the diagram: 1. Chamber; 2. Carrier; 3. Air supply seat; 4. Exhaust port; 5. Base; 21. Base; 22. Floating adjustment component; 23. Enclosure; 24. First retaining ring; 25. Support shaft; 26. Nozzle; 27. Second retaining ring; 221. Connecting seat; 222. Support column; 223. Sliding ball seat; 224. Elastic element; 225. Support seat; 226. Hinge arm; 227. Clamping seat; 228. Telescopic device; 6. Telescopic rod; 7. Collection chamber; 8. Detector; 11. Air collection hole; 12. Third retaining ring; 13. Heating ring. Detailed Implementation

[0048] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms are interchangeable where appropriate; this is merely a way of distinguishing objects with the same attributes in the embodiments of this application. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, so that a process, method, system, product, or apparatus that comprises a series of elements is not necessarily limited to those elements, but may include other elements not explicitly listed or inherent to those processes, methods, products, or apparatuses.

[0049] Example: In this embodiment of the invention, please refer to... Figures 1-4 A partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth is provided, comprising a chamber 1, a gas supply seat 3 at the top of the chamber 1, and an exhaust port 4 at the bottom of the chamber 1. The gas supply seat 3 is used to supply reaction gas into the chamber 1. The quartz reaction chamber further includes:

[0050] Vehicle 2, said vehicle 2 includes:

[0051] Base 21, which is placed inside chamber 1, and a baffle 23 is provided on the edge of the upper surface of base 21. The base 21 and the baffle 23 form a bearing space for bearing the workpiece.

[0052] Multiple first retaining rings 24 are fixedly connected to the lower surface of the base 21 and are distributed at intervals in the radial direction;

[0053] A support shaft 25 is connected to the lower part of the base 21 and is used to support and drive the base 21 to rotate;

[0054] Wherein, there is a first gap between the bottom end of the first retaining ring 24 and the inner bottom surface of the chamber 1;

[0055] The inner bottom surface of the chamber 1 is fixedly connected with a plurality of third retaining rings 12 that are radially spaced apart. There is a second gap between the top of the third retaining ring 12 and the bottom surface of the base 21. The size of the first gap is equal to the size of the second gap.

[0056] The plurality of first retaining rings 24 and the plurality of third retaining rings 12 are arranged in an alternating pattern in the radial direction.

[0057] In other words, multiple first retaining rings 24 are fixed below the base 21, and they are distributed at radial intervals along the base 21. At the same time, multiple third retaining rings 12 are fixed to the inner bottom surface of the chamber 1, also distributed at radial intervals. These multiple first retaining rings 24 and multiple third retaining rings 12 are radially staggered, forming a labyrinthine structure.

[0058] During the epitaxial growth process, the reactive gas enters the chamber 1 through the gas supply seat 3. In conventional designs, the reactive gas flows into the gap between the base 21 and the bottom of the chamber 1, resulting in the deposition of reactants. In this embodiment, however, a physical barrier is formed by the staggered distribution of the first baffle ring 24 and the third baffle ring 12.

[0059] When the reactant gas attempts to move into the gap between the bottom surface of the base 21 and the bottom of the chamber 1, the first baffle ring 24 blocks its straight path, forcing the gas flow to change direction; then, the third baffle ring 12 interferes with its flow direction again, forming layers of obstruction, which greatly increases the flow resistance of the reactant gas to the gap area.

[0060] It should be noted that the size of the first gap is equal to the size of the second gap, which ensures that the flow rate of the reactant gas decreases uniformly when passing through each of the first baffle ring 24 and the third baffle ring 12.

[0061] In addition, the number of first retaining rings 24 is one more than the number of third retaining rings 12, so that each third retaining ring 12 has first retaining rings 24 distributed on both sides in the radial direction;

[0062] A heating ring 13 is provided in the third retaining ring 12.

[0063] In other words, each third baffle ring 12 is surrounded on both sides by the first baffle ring 24. The first baffle ring 24 acts as a heat insulation barrier to prevent the heat radiation of adjacent heating rings 13 from interfering with each other, and to ensure that the temperature of each heating zone is independently controllable.

[0064] In this embodiment, the carrier 2 also has multiple nozzles 26 and a built-in air supply pipe;

[0065] Multiple nozzles 26 are circumferentially spaced on the support shaft 25, corresponding to the positions of the first retaining ring 24;

[0066] The air supply pipe is built into the support shaft 25 and is connected to the air inlet of the nozzle 26.

[0067] The nozzle 26 sprays air towards the connection between the first baffle ring 24 and the base 21;

[0068] The bottom of the chamber 1 is provided with a plurality of air collection holes 11 near the support shaft 25, and the plurality of air collection holes 11 correspond to the plurality of nozzles 26 in position.

[0069] It is important to note that the nozzle 26 sprays gas towards the connection between the first baffle ring 24 and the base 21. The auxiliary gas ejected from the nozzle 26 impacts the bottom surface of the base 21 and the first baffle ring 24, then bounces back and couples with the suction force of the gas collecting hole 11, forming a local high-pressure turbulence zone in this area. This prevents reactive gas from entering the space formed between the base 5 and the support shaft 25, and byproduct particles in the turbulence are drawn into the gas collecting hole 11 with the airflow, avoiding secondary pollution.

[0070] It is worth noting that the existing jetting method lacks a recovery mechanism, resulting in a large amount of auxiliary gas directly entering the main reaction zone of chamber 1. This dilutes the concentration of the reactive gas, disrupts the stoichiometry required for silicon epitaxial growth, and reduces the deposition rate and film uniformity.

[0071] In this embodiment, most of the auxiliary gas ejected by the nozzle 26 is confined within the labyrinth below the base 21. Due to the physical obstruction of the baffle rings (first baffle ring 24 and third baffle ring 12) and the directional suction of the gas collection hole 11, most of the gas cannot diffuse upwards to the main reaction area (the silicon wafer growth area above the base 21).

[0072] Furthermore, a collection chamber 7 is fitted on the outer side of the base 5, the collection chamber 7 covers the air collection hole 11 and communicates with the air collection hole 11;

[0073] The collection chamber 7 is provided with an interface for connection to the detector 8.

[0074] The gas drawn in by the gas collecting port 11 is enriched in the collection chamber 7, and the detector 8 can analyze it in real time.

[0075] Particulate matter concentration: Monitor Si dust content (early warning of deposition risk);

[0076] Gas composition: The proportion of residual reactant gases is detected to determine the reaction efficiency.

[0077] This detection method has certain advantages. For example, when an increase in Si particle concentration is detected, the gas flow rate of nozzle 26 is increased to strengthen the air curtain barrier.

[0078] In this embodiment, the carrier 2 further includes a second retaining ring 27, which is fixed to the bottom of the base 21;

[0079] The second retaining ring 27 is located further outward in the radial position than either of the first retaining rings 24, and its length is greater than that of either of the first retaining rings 24.

[0080] A base 5 is provided below the chamber 1, and the base 5 has an upper opening for communicating with the chamber 1.

[0081] The support shaft 25 passes through the base 5 and is rotatably connected to the base 5;

[0082] A telescopic rod 6 is fixedly connected to the base 5;

[0083] The telescopic end of the telescopic rod 6 is fixedly connected to a connecting ring, which is rotatably connected to the support shaft 25.

[0084] In this embodiment, the elongated second retaining ring 27 further hinders the mixing of the two gases. This also makes it easier for the second retaining ring 27 to interfere with the inner bottom surface of the chamber 1 (where deposits are formed due to the reaction of the reacting gases). In this case, the telescopic rod 6 retracts, causing the connecting ring to move the support shaft 25 downward, while the base 21 and the second retaining ring 27 descend synchronously. The bottom end of the second retaining ring 27 contacts the inner bottom of the chamber 1, and the deposits are scraped off by rotational friction.

[0085] Furthermore, a floating adjustment component 22 is provided between the support shaft 25 and the base 21;

[0086] The floating adjustment component 22 can be adjusted to either a locked state or a floating state of the base 21 relative to the support shaft 25;

[0087] When the base 21 is floating relative to the support shaft 25, the telescopic rod 6 can drive the support shaft 25 and the base 21 to move downward, so that the second retaining ring 27 abuts against the inner bottom surface of the chamber 1. At this time, frictional movement can occur between the second retaining ring 27 and the inner bottom surface of the chamber 1.

[0088] In other words, the floating adjustment component 22 controls the connection state between the base 21 and the support shaft 25 through dual-mode switching:

[0089] Locked state: The base 21 is rigidly connected to the support shaft 25, which is suitable for the normal epitaxial growth stage and ensures the rotational stability of the base 21.

[0090] Floating state: The base 21 can move slightly relative to the support shaft 25 for cleaning and maintenance, allowing the base 21 to adapt to the bottom shape inside the chamber 1.

[0091] Specifically, the floating adjustment component 22 includes:

[0092] Connector 221 is fixedly connected to support shaft 25;

[0093] The support column 222 is fixedly connected to the connecting seat 221;

[0094] The sliding ball seat 223 is slidably sleeved on the support column 222;

[0095] The elastic element 224 is disposed between the sliding ball seat 223 and the support column 222;

[0096] A support base 225 is fixedly connected to a sliding ball seat 223, and the support base 225 is used to support the connecting base 21;

[0097] At least two symmetrically arranged clamping seats 227;

[0098] The hinge arm 226 hinges the clamping seat 227 to the connecting seat 221;

[0099] The telescopic device 228, which is mounted on the connecting seat 221, can drive at least two clamping seats 227 to deflect around the hinge arm 226. The end of the clamping seat 227 can contact or separate from the outer peripheral surface of the sliding ball seat 223 after deflection to achieve locking or unlocking.

[0100] The surface of the sliding ball seat 223 can be provided with a micro-protrusion array to increase the coefficient of friction with the clamping seat 227 and prevent relative sliding. The inner surface of the clamping seat 227 can be inlaid with a wear-resistant ceramic pad to reduce wear from high-frequency locking / unlocking.

[0101] The expansion joint 228 preferably uses a piezoelectric ceramic actuator.

[0102] The telescopic device 228 can drive the clamping seat 227 to deflect around the hinge arm 226. The end of the clamping seat 227 can contact or separate from the outer peripheral surface of the sliding ball seat 223 after deflection to achieve locking or unlocking.

[0103] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth, comprising a chamber (1), wherein a gas supply seat (3) is provided at the top of the chamber (1), and an exhaust port (4) is provided at the bottom of the chamber (1), characterized in that, Also includes: The carrier (2) includes: a base (21) placed inside the chamber (1) and a barrier (23) provided on the edge of the upper surface of the base (21); and a plurality of first retaining rings (24) fixedly connected to the lower surface of the base (21) and distributed radially at intervals. A support shaft (25) is connected to the lower part of the base (21) for supporting and driving the base (21) to rotate; a floating adjustment assembly (22) is disposed between the base (21) and the support shaft (25); a first gap is formed between the bottom end of the first retaining ring (24) and the inner bottom surface of the chamber (1); The inner bottom surface of the chamber (1) is fixedly connected with a plurality of third retaining rings (12) that are radially spaced apart. There is a second gap between the top of the third retaining ring (12) and the bottom surface of the base (21). The size of the first gap is equal to the size of the second gap. The plurality of first retaining rings (24) and the plurality of third retaining rings (12) are radially staggered. The carrier (2) also includes a second retaining ring (27), which is fixed to the bottom of the base (21). The radial position of the second retaining ring (27) is further outward than any of the first retaining rings (24), and its length is greater than any of the first retaining rings (24). A base (5) is provided below the chamber (1), and a telescopic rod (6) is fixedly connected to the base (5). The floating adjustment component (22) can be adjusted to make the base (21) lock or float relative to the support shaft (25). When the base (21) is in a floating state relative to the support shaft (25), the telescopic rod (6) can drive the support shaft (25) and the base (21) to move down, so that the second retaining ring (27) abuts against the inner bottom surface of the chamber (1). The floating adjustment component (22) includes: A connecting seat (221) is fixedly connected to a support shaft (25), and a support column (222) is fixed on the connecting seat (221); A sliding ball seat (223) is slidably sleeved on a support column (222); An elastic element (224) is disposed between the sliding ball seat (223) and the support column (222); A support base (225) is fixedly connected to a sliding ball seat (223), and the support base (225) is used to support the connecting base (21); At least two symmetrically arranged clamping seats (227); The hinge arm (226) hinges the clamping seat (227) to the connecting seat (221); The telescopic device (228), located on the connecting seat (221), can drive at least two clamping seats (227) to deflect around the hinge arm (226).

2. The partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth according to claim 1, characterized in that: The base (5) has an upper opening for communication with the chamber (1); The support shaft (25) passes through the base (5) and is rotatably connected to the base (5); The telescopic rod (6) has a connecting ring fixedly connected to its telescopic end, and the connecting ring is rotatably connected to the support shaft (25).

3. The partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth according to claim 1, characterized in that: The number of the first retaining rings (24) is one more than the number of the third retaining rings (12), so that each third retaining ring (12) has a first retaining ring (24) distributed on both sides of the radial direction; A heating ring (13) is provided in the third retaining ring (12).

4. The partitioned temperature-controlled quartz reaction chamber for silicon epitaxial growth according to claim 2, characterized in that: The vehicle (2) also has multiple nozzles (26) and a built-in air supply pipe; Multiple nozzles (26) are circumferentially spaced on the support shaft (25), corresponding to the positions of the first retaining ring (24); The air supply pipe is built into the support shaft (25) and connected to the air inlet of the nozzle (26); The nozzle (26) sprays air towards the connection between the first retaining ring (24) and the base (21); The bottom of the chamber (1) is provided with a plurality of air collection holes (11) near the support shaft (25), and the plurality of air collection holes (11) correspond to the plurality of nozzles (26) in position.

5. A zoned temperature-controlled quartz reaction chamber for silicon epitaxial growth according to claim 4, characterized in that: A collection chamber (7) is fitted on the outside of the base (5), the collection chamber (7) covers the air collection hole (11) and communicates with the air collection hole (11); The collection chamber (7) is provided with an interface for connecting to the detector (8).

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