Wafer corner defect detection method, device and equipment

Abstract

According to the wafer corner defect detection method, device and equipment provided by the invention, after the detection trigger signal is detected, the negative pressure operation can be performed on the wafer by using the flexible sensor in response to the detection trigger signal, so that the wafer is more uniformly attached to the surface of the wafer, and the detection efficiency is improved while additional damage is avoided. The structure change of the wafer can be sensed more sensitively, and a more accurate pressure resistance value can be obtained; afterwards, a damage judgment formula and a multi-stage damage model can be adopted to provide a standardized process and a quantitative basis for judgment of the wafer corner defects, the pressure resistance value is substituted into the formula to calculate the loss value, and the damage level of the loss value is determined according to the multi-stage damage model, so that the detection result can be more objective and accurate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a wafer corner defect detection method, device and equipment. BACKGROUND

[0002] In the field of notebook computer development and testing, the performance of the motherboard is crucial, and extreme performance reliability testing and stress testing are key links. These tests can comprehensively test the running ability of the motherboard under extreme conditions, ensuring its stability and reliability in actual use. However, the testing process can cause damage to the CPU wafer corners of the motherboard, which is difficult to detect with the naked eye, but can seriously affect the function implementation and operation of the CPU. Therefore, it is necessary to detect the damage to the wafer after testing.

[0003] Currently, there are two main methods for detecting wafer corner defects: one is to place the wafer under a microscope and observe the optical image to determine whether the wafer corners are intact; the other is to use a rigid probe to detect the wafer to determine the damage. These methods use heavy detection devices that require harsh working environments, have a complicated configuration process, and cannot be operated portably. The rigid probe can also cause secondary damage to the wafer during the detection process. Moreover, when uploading the detection results, they all need to use a third-party device to take pictures. However, due to factors such as camera pixels, background light, and third-party device picture algorithms, the detection error will be further magnified, affecting the accuracy of the detection results. SUMMARY

[0004] The present application aims to at least solve one of the above technical defects, particularly the technical defect that the existing wafer corner defect detection method is complicated to operate, thereby affecting the detection efficiency and accuracy.

[0005] The present application provides a wafer corner defect detection method, which comprises:

[0006] In response to a detection trigger signal, a flexible sensor is used to perform negative pressure operation on the wafer to obtain a piezoresistive value;

[0007] A preset damage determination formula is used to determine the loss of the piezoresistive value to obtain a loss value, and a multi-level damage model is used to determine the damage level of the loss value;

[0008] The damage level is uploaded to a display module, and a hierarchical alarm is performed in the display module based on the damage level.

[0009] Optionally, the method further comprises:

[0010] The optical identification unit is used to optically identify the material to be detected before a detection trigger signal is detected, to obtain an identification result, and when the material to be detected is determined to be a wafer through the identification result, the detection trigger signal is output.

[0011] Optionally, the optical identification unit comprises an LED light source and a photoresistor.

[0012] The optical identification unit is used to optically identify the material to be detected before a detection trigger signal is detected, to obtain an identification result, and when the material to be detected is determined to be a wafer through the identification result, the detection trigger signal is output.

[0013] The LED light source is activated after the material to be detected is placed in the detection position.

[0014] The LED light source is used to reflect light on the material to be detected to form reflected light.

[0015] The photoresistor is used to detect the resistance value of the reflected light.

[0016] The material to be detected is identified based on a preset threshold and the resistance value to obtain an identification result.

[0017] Optionally, the material to be detected is identified based on a preset threshold and the resistance value to obtain an identification result, comprising:

[0018] It is determined whether the resistance value is lower than the preset threshold.

[0019] If yes, it is determined that the identification result of the material to be detected is a wafer.

[0020] If no, it is determined that the identification result of the material to be detected is not a wafer.

[0021] Optionally, before the detection trigger signal is detected, the optical identification unit is used to optically identify the material to be detected to obtain an identification result, and when the material to be detected is determined to be a wafer through the identification result, the detection trigger signal is output, further comprising:

[0022] When the material to be detected is determined to be a wafer through the identification result, the interlocking control circuit is turned on; the interlocking control circuit comprises a comparator circuit and a button lock.

[0023] The comparator circuit outputs a high level to the button lock to make the relay in the button lock attract and unlock the defect detection button; the defect detection button outputs a detection trigger signal after being triggered.

[0024] Optionally, the flexible sensor is used to perform negative pressure operation on the wafer to obtain a piezoresistance value, comprising:

[0025] A direct current is applied to the hydrogel flexible sensor, so that the hydrogel flexible sensor adopts a negative pressure on the edge corner of the wafer corresponding to the pressure value of the direct current;

[0026] The micro control unit collects the resistance value of the wafer after the negative pressure to obtain a piezoresistance value.

[0027] Optionally, the damage determination formula comprises:

[0028]

[0029] In the formula, L represents a loss value; R represents a piezoresistance value when the flexible sensor applies a negative pressure to the wafer; R0 represents a reference resistance value of the flexible sensor.

[0030] Optionally, the method further comprises:

[0031] The damage level is uploaded to a display module, and a hierarchical alarm is performed in the display module based on the damage level.

[0032] Optionally, the display module comprises a display screen, an indicator light and a buzzer.

[0033] The hierarchical alarm in the display module based on the damage level comprises:

[0034] A display style and an indicator color corresponding to the damage level are determined;

[0035] The display style is used to display the damage level in the display screen, and the indicator color is used to display the indicator light in color.

[0036] If the damage level is a serious damage, the buzzer is triggered to perform an alarm.

[0037] The application also provides a wafer edge corner defect detection device, comprising:

[0038] A resistance detection module is configured to perform a negative pressure operation on the wafer through a flexible sensor to obtain a piezoresistance value in response to a detection trigger signal.

[0039] A damage determination module is configured to determine a loss value of the piezoresistance value by using a preset damage determination formula, and determine a damage level of the loss value by using a multi-level damage model.

[0040] The application also provides a wafer edge corner defect detection device, comprising a flexible sensor and a micro control unit.

[0041] ​The flexible sensor is configured to perform negative pressure operation on the wafer in response to the detection trigger signal to obtain a piezoresistance value.

[0042] The micro control unit is configured to determine a loss value of the piezoresistance value by using a preset damage determination formula, and determine a damage level of the loss value by using a multi-level damage model.

[0043] Optionally, the device further comprises an optical identification module.

[0044] The optical identification module is configured to perform optical identification on the material to be detected to obtain an identification result, and output the detection trigger signal when it is determined by the identification result that the material to be detected is a wafer.

[0045] Optionally, the device further comprises a display module.

[0046] The display module is configured to receive the damage level uploaded by the micro control unit, and perform hierarchical alarm based on the damage level.

[0047] From the above technical solutions, the embodiments of the present application have the following advantages:

[0048] The wafer corner defect detection method, device and equipment provided by the present application can perform negative pressure operation on the wafer by using the flexible sensor in response to the detection trigger signal after the detection trigger signal, so that the wafer can be more uniformly attached to the wafer surface, while avoiding causing additional damage, and the structure change of the wafer can be more sensitively perceived to obtain more accurate piezoresistance value; subsequently, the present application can provide standardized process and quantitative basis for wafer corner defect determination by using damage determination formula and multi-level damage model, by substituting the piezoresistance value into the formula to calculate the loss value, and determining the damage level of the loss value according to the multi-level damage model, so that the detection result is more objective and accurate. BRIEF DESCRIPTION OF DRAWINGS

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0050] Figure 1 A flowchart of a wafer corner defect detection method provided by an embodiment of the present application;

[0051] Figure 2 An interaction diagram of wafer corner defect detection operation provided by an embodiment of the present application;

[0052] Figure 3A structural schematic diagram of a wafer corner defect detection device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0053] The technical solutions in the embodiments of the present application will be clearly and completely described in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0054] At present, there are mainly two methods for wafer corner defect detection. One is to place the wafer under a microscope and judge whether the wafer corner is neat by observing optical imaging. The other is to use a rigid probe to detect the wafer to obtain the damage condition. The detection devices used in these methods are heavy, have strict requirements on the working environment, have a complicated configuration process, cannot realize portable operation, and the rigid probe can easily cause secondary damage to the wafer during the detection process. Moreover, when uploading the detection results, they all need to use a third-party device to take a picture. However, due to the limitation of factors such as camera pixels, background light, and third-party device picture algorithm, the detection error will be further magnified, affecting the accuracy of the detection results.

[0055] Based on this, the present application proposes the following technical solutions, which are specifically described below.

[0056] In one embodiment, as shown in Figure 1 , Figure 1 A flowchart of a wafer corner defect detection method provided by an embodiment of the present application; the present application provides a wafer corner defect detection method, which specifically includes the following steps.

[0057] S120: In response to the detection trigger signal, the wafer is subjected to negative pressure operation by the flexible sensor to obtain a piezoresistive value.

[0058] In this step, the detection device can monitor the trigger module of the external device, and after monitoring that the trigger module outputs a detection trigger signal, in response to the detection trigger signal, the wafer is subjected to negative pressure operation by the flexible sensor, so that it is more uniformly attached to the wafer surface. At the same time, while avoiding causing additional damage, it can more sensitively perceive the structural changes of the wafer, and obtain a more accurate piezoresistive value.

[0059] The trigger module refers to a module that triggers the user to start the wafer defect detection process of the detection device. It can be a defect detection button and output a detection trigger signal when receiving a pressing operation. It can also be a switch and output a detection trigger signal when the switch is closed. The trigger module is not limited here.

[0060] Specifically, after the defect detection button is unlocked, the detection device can continuously monitor the status of the button in real time so as to immediately capture the operation signal when the user presses the button or the system triggers the button. After capturing the operation signal, the detection device can activate the flexible sensor to apply a controllable negative pressure to the wafer, and then collect the piezoresistive value of the flexible sensor during the negative pressure process.

[0061] It should be noted that flexible sensors are soft in texture, which allows them to better conform to the wafer surface during negative pressure operations, avoiding additional damage to fragile parts such as wafer edges caused by rigid contact. At the same time, it improves the sensor's sensitivity to minute structural changes on the wafer, enabling it to more accurately perceive microscopic deformations and pressure distribution changes on the sensor surface, thereby obtaining more accurate piezoresistive values.

[0062] S130: The loss value of the piezoresistive value is determined by a preset damage judgment formula, and the damage level of the loss value is determined by a multi-level damage model.

[0063] In this step, after the piezoresistive value of the wafer is acquired through step S120, the detection device can use the damage judgment formula and multi-level damage model to provide a standardized process and quantitative basis for the judgment of wafer corner defects. By substituting the piezoresistive value into the formula to calculate the loss value, and determining the damage level of the loss value according to the multi-level damage model, the detection results can be made more objective and accurate.

[0064] Among them, the damage determination formula refers to the mathematical expression that converts the physical quantity collected by the sensor, such as the piezoresistive value, into a quantitative loss value. It can quantify the degree of defects on the wafer surface or corners. The multi-level damage model refers to the standard model for classifying the degree of wafer defects. This model can provide clear classification criteria for defect determination, making the test results comparable and repeatable. This application can divide the loss value into four levels according to a preset threshold using the multi-level damage model, including no damage, slight damage, moderate damage, or severe damage.

[0065] Specifically, the detection device can input the collected piezoresistive values ​​into a preset damage assessment formula. The formula calculates the loss value of a local area of ​​the wafer, which objectively reflects the degree of damage to the wafer surface or corners. Subsequently, the detection device can classify the calculated loss value according to a multi-level damage model, dividing wafer defects into multiple levels. This provides clear quantitative standards and hierarchical guidance for defect assessment results, avoiding potential biases from subjective human judgment and improving the consistency and repeatability of defect identification.

[0066] In the above embodiments, after detecting the trigger signal, a flexible sensor can be used to apply negative pressure to the wafer in response to the trigger signal, making it adhere more evenly to the wafer surface. This avoids causing additional damage while being able to more sensitively sense structural changes in the wafer and obtain more accurate piezoresistive values. Subsequently, this application can use damage judgment formulas and multi-level damage models to provide a standardized process and quantitative basis for judging wafer corner defects. By substituting the piezoresistive value into the formula to calculate the loss value and determining the damage level of the loss value according to the multi-level damage model, the detection results can be made more objective and accurate.

[0067] In one embodiment, the method may further include:

[0068] S110: Before responding to the detection trigger signal, the optical recognition unit performs optical recognition on the material to be detected, obtains the recognition result, and outputs the detection trigger signal when the material to be detected is determined to be a wafer through the recognition result.

[0069] In this embodiment, after sensing the material to be detected, the detection device can use an optical recognition unit to perform optical recognition on the material to be detected, obtain the recognition result, and when the recognition result determines that the material to be detected is a wafer, output a detection trigger signal to avoid detecting non-target materials, thereby improving the utilization rate of detection resources.

[0070] Specifically, after sensing that the material to be tested has been placed on the optical recognition unit, the detection device can perform precise optical recognition operations on the material through the optical recognition unit. This unit can acquire information about reflected or transmitted light from the material surface through optical means, thereby identifying the type, shape, or state of the material. Based on this, after the detection device identifies the material to be tested as a wafer through the optical recognition unit, it can automatically output a detection trigger signal and enter a standby state to prepare for the execution of the detection process.

[0071] In one embodiment, the optical recognition unit in step S110 may include an LED light source and a photoresistor; wherein, the process of using the optical recognition unit to perform optical recognition on the material to be detected and obtaining the recognition result may include:

[0072] S111: After sensing that the material to be tested has been placed at the detection position, the LED light source is activated.

[0073] S112: Using an LED light source to reflect light off the material to be tested, thus forming reflected light.

[0074] S113: A photoresistor is used to detect the resistance of the reflected light to obtain the resistance value.

[0075] S114: Based on a preset threshold and resistance value, perform material identification on the material to be tested and obtain the identification result.

[0076] In this embodiment, after the detection device senses that the material to be detected has been placed at the detection position, it can activate the LED light source, then use the LED light source to reflect light from the material to be detected to form reflected light, and use a photoresistor to detect the resistance value of the reflected light to obtain the resistance value. Finally, the material to be detected can be identified based on a preset threshold and the resistance value to obtain the identification result.

[0077] Specifically, when the detection device senses that the material to be tested has been accurately placed at the detection position, it automatically activates the LED light source in the optical recognition unit, illuminating the surface of the material at a predetermined angle and intensity (e.g., using an 850nm infrared LED at a 45° angle) to generate stable reflected light. After passing through the material surface, the reflected light is received by the photoresistor in the optical recognition unit. The change in the photoresistor's resistance is then converted into a measurable electrical signal, enabling precise detection of the light reflection intensity. Subsequently, the detection device compares the acquired resistance value with a preset threshold to determine whether the optical properties of the material to be tested match the characteristics of the target material, thereby completing the optical recognition of the material and generating the final recognition result.

[0078] Understandably, this application utilizes the characteristic that the reflectivity of the CPU wafer surface is significantly higher than that of other components on the motherboard to achieve non-contact, fast and high-precision material identification through an optical recognition unit. This can avoid errors that may be caused by manual judgment, while improving the automation level and working efficiency of the detection device.

[0079] In one embodiment, step S114, which involves identifying the material to be detected based on a preset threshold and a resistance value to obtain the identification result, may include:

[0080] S1141: Determine whether the resistance value is lower than the preset threshold.

[0081] S1142: If so, then the identification result of the material to be tested is determined to be a wafer.

[0082] S1143: If not, then the identification result of the material to be tested is determined to be a wafer.

[0083] In this embodiment, after obtaining the resistance value of the material to be tested, the detection device can determine whether the resistance value is lower than a preset threshold. If so, it indicates that the identification result of the material to be tested is a wafer; otherwise, it indicates that the identification result of the material to be tested is not a wafer.

[0084] Specifically, the preset threshold set in this application can be 800Ω. To elaborate, wafers typically have a smooth, flat, and highly reflective surface with a light reflectivity greater than 60%. When an LED light source illuminates the wafer surface, the reflected light intensity is high, increasing the light energy received by the photoresistor and thus significantly reducing its resistance. Experimental calibration shows that under these typical reflection conditions, the resistance of the photoresistor drops below 800Ω. Therefore, when the detected resistance value is below the preset threshold of 800Ω, the detection device can determine that the surface of the material being tested has high reflectivity, a characteristic of wafers, and thus identify the material as a wafer. Conversely, if the surface reflectivity of the material is lower than the typical reflectivity of a wafer, the photoresistor receives less light energy, and its resistance value remains above 800Ω. In this case, the detection device can determine that the material does not possess the high reflectivity of a wafer, and thus identify it as a non-wafer.

[0085] In one embodiment, before responding to the detection trigger signal, step S110 involves using an optical recognition unit to perform optical recognition on the material to be detected, obtaining a recognition result, and outputting a detection trigger signal when the recognition result determines that the material to be detected is a wafer. This may further include:

[0086] S115: When the material to be tested is determined to be a wafer through the identification result, the interlock control circuit is activated; the interlock control circuit includes a comparator circuit and a push-button lock.

[0087] S116: A high-level signal is output to the push-button lock via a comparator circuit to activate the relay in the push-button lock and unlock the defect detection button; the defect detection button is used to output a detection trigger signal when triggered.

[0088] In this embodiment, when the material to be tested is a wafer, the testing device can automatically activate the interlock control circuit, which consists of a comparator circuit and a push-button lock. Therefore, the testing device can output a high level to the push-button lock through the comparator circuit, causing the relay in the push-button lock to engage and unlock the defect detection button. When the defect detection button is triggered, it will output a detection trigger signal.

[0089] The defect detection button is an interactive control device used to trigger the wafer defect detection process. Its main function is to allow users to initiate the defect detection process, including defect scanning, data acquisition, and analysis, by pressing the button or by actively triggering it through the system. Therefore, by identifying the material to be inspected, this application can effectively avoid unnecessary defect detection operations on non-target materials, thereby significantly reducing misoperation and resource waste.

[0090] Specifically, the interlocking control circuit is responsible for safely combining the material identification results with the button operation logic. In more detail, the detection device can use a comparator circuit to perform a level conversion on the material identification results. When the result indicates a wafer, the comparator circuit outputs a high-level signal to the button lock control terminal. This high-level signal can activate the relay inside the button lock, thereby releasing the physical or electrical lock and unlocking the defect detection button.

[0091] Understandably, by using the conduction interlock control circuit, the detection device can ensure that the defect detection process is only allowed to start when it is confirmed that the material to be detected is a wafer, thus avoiding misoperation of non-target materials, solving the problem of sensor wastage, and achieving equipment protection.

[0092] In one embodiment, the process of applying negative pressure to the wafer using a flexible sensor to obtain the piezoresistive value in step S120 may include:

[0093] S121: Apply direct current to the hydrogel flexible sensor so that the hydrogel flexible sensor applies negative pressure to the edges of the wafer using a pressure value corresponding to the direct current.

[0094] S122: The microcontroller unit collects the resistance value of the hydrogel flexible sensor after negative pressure to obtain the piezoresistive value.

[0095] In this embodiment, when performing defect detection on a wafer, the detection device can first apply direct current to the hydrogel flexible sensor so that the hydrogel flexible sensor applies negative pressure to the edges and corners of the wafer using a pressure value corresponding to the direct current. Then, the microcontroller unit can collect the resistance value of the hydrogel flexible sensor after applying negative pressure to obtain the piezoresistive value.

[0096] Specifically, the detection device first applies a direct current (DC) to the hydrogel flexible sensor, causing it to exhibit pressure characteristics corresponding to the DC current under specific electrical actuation, thereby applying a controllable negative pressure adsorption effect to the wafer corner area. In this way, the wafer can adhere more tightly and uniformly to the sensor surface, ensuring a stable and reliable contact process and avoiding localized damage or detection errors caused by uneven force. Subsequently, the microcontroller unit in the detection device can acquire real-time electrical signals from the hydrogel flexible sensor under negative pressure, record the resistance changes of the hydrogel flexible sensor, and convert them into piezoresistive values. This piezoresistive value can sensitively reflect the minute morphological changes of the hydrogel flexible sensor under negative pressure, providing accurate quantitative evidence for wafer corner defect identification.

[0097] For example, the detection device can apply a 5V DC current to the hydrogel flexible sensor. The sensor will then apply a 5N negative pressure to the wafer edge for 3 seconds. After this period, the microcontroller unit can then acquire the resistance value, obtaining the piezoresistive value. The thickness of the hydrogel flexible sensor can be 0.5mm ± 0.1mm.

[0098] In one embodiment, the damage determination formula in step S130 may include:

[0099]

[0100] In the formula, Indicates the loss value; This indicates the piezoresistive value when the flexible sensor applies negative pressure to the wafer; This represents the reference resistance value of the flexible sensor.

[0101] In this embodiment, the microcontroller unit stores a reference resistance value for the flexible sensor, which is the resistance value of the sensor in its initial state or without triggering. Therefore, after acquiring the piezoresistive value when the flexible sensor applies negative pressure to the wafer, the microcontroller unit can directly use this piezoresistive value and the stored reference resistance value to calculate the wafer's damage value, thereby quantifying the degree of damage to the wafer's edges and corners.

[0102] Furthermore, based on the loss value calculated using the damage determination formula, the hierarchical logic of the multi-level damage model can be expressed as follows: when ΔR≤5%, the model output is no damage; when 5%<ΔR≤20%, the model output is slight damage; when 20%<ΔR≤50%, the model output is moderate damage; and when ΔR>50%, the model output is severe damage.

[0103] In one embodiment, the method may further include:

[0104] S140: Upload the damage level to the display module and issue graded alarms in the display module based on the damage level.

[0105] In this embodiment, after determining the damage level of the wafer, the detection device can upload the damage level to the display module and issue graded alarms in the display module based on the damage level, thereby improving the timeliness and pertinence of the testers in handling the problem.

[0106] Specifically, the detection device can convert the calculated loss level into binary code, which can then be uploaded to the display module in real time. The display module then reconverts the loss level and presents it intuitively to the testers. During information display, the display module can use preset hierarchical alarm rules to provide various forms of hierarchical alarms for wafers with different damage levels, such as color coding, icon prompts, or sound alerts. This allows testers to clearly identify the damage status and urgency of the wafers at a glance, and then take appropriate measures in a timely manner. For example, testers can prioritize or isolate severely damaged wafers, and arrange for subsequent observation or repair of slightly damaged wafers, thereby significantly improving the timeliness and targetedness of problem handling.

[0107] More specifically, when the loss level is no damage, the corresponding binary code is 00; when the loss level is slight damage, the corresponding binary code is 01; when the loss level is moderate damage, the corresponding binary code is 10; and when the loss level is severe damage, the corresponding binary code is 11.

[0108] In one embodiment, the display module in step S140 may include a display screen, indicator lights, and a buzzer; wherein, the process of performing graded alarms in the display module based on the damage level may include:

[0109] S141: Determine the display style and indicator color corresponding to the damage level.

[0110] S142: Display the damage level on the display screen using a display style, and use an indicator color to display the indicator light.

[0111] S143: If the damage level is severe, trigger the buzzer to sound an alarm.

[0112] In this embodiment, when it is necessary to display the damage level of the wafer, the detection device can first determine the display style and indicator color corresponding to the damage level. The damage level can then be displayed on the screen using the display style, and the indicator color can be used to display the indicator light. Furthermore, when the damage level is severe, the detection device can further trigger a buzzer to issue an alarm.

[0113] Specifically, when the testing device needs to visually present the damage level of a wafer, it can first determine the display style and indicator color corresponding to that damage level. For example, different text labels, graphic symbols, or numerical levels can be used as display styles, and corresponding color schemes can be matched to different damage levels, such as green for no damage, blue for minor damage, yellow for moderate damage, and red for severe damage. Subsequently, the display module can accurately display the damage level on the screen according to the display style, allowing testers to intuitively obtain the wafer damage level information through the screen. Simultaneously, the indicator colors drive indicator lights for synchronous display, enhancing the effect of multi-channel information transmission. Furthermore, when the damage level is determined to be severe, the display module can further trigger a buzzer to emit an acoustic alarm signal, strengthening the warning effect through sound prompts and reminding testers to immediately pay attention to and address the problem.

[0114] For example, when the damage level is no damage, the display shows no damage and the indicator light is green; when the damage level is minor damage, the display shows minor damage and the indicator light is blue; when the damage level is moderate damage, the display shows moderate damage and a red exclamation mark, and the indicator light is yellow; when the damage level is severe damage, the display shows severe damage and a red exclamation mark, the indicator light is red, and a buzzer sounds for 0.5 seconds.

[0115] To better explain the wafer edge defect detection method of this application, the following will be conducted through... Figure 2 To further illustrate, illustratively, such as Figure 2 As shown, Figure 2 This is an interactive schematic diagram of a wafer edge defect detection operation provided in an embodiment of this application.

[0116] Figure 2 The detection device is powered by a 3.7V / 2000mAh rechargeable lithium battery. After the user places the material to be tested into the device, the device uses an LED light source and a photoresistor in the optical recognition module to determine the reflected light intensity. When the determination result is a wafer, the comparator circuit in the interlock control circuit outputs a high level to unlock the defect detection button. After the defect detection process is started by pressing this button, the detection device uses a flexible sensor to apply negative pressure to the wafer and uses a microcontroller unit, such as an STM32 MCU, to collect its piezoresistive signal. Combined with its pre-stored reference resistance value, it calculates the wafer's damage level. The calculation result can then be decoded and uploaded to the OLED display in the display module. Simultaneously, the indicator light is controlled to display the color according to the damage level, and a buzzer is controlled to sound an alarm when necessary.

[0117] The wafer corner defect detection device provided in the embodiments of this application is described below. The wafer corner defect detection device described below and the wafer corner defect detection method described above can be referred to in correspondence.

[0118] In one embodiment, such as Figure 3 As shown, Figure 3 This is a schematic diagram of a wafer corner defect detection device provided in an embodiment of this application; this application also provides a wafer corner defect detection device, including a resistance detection module 220 and a damage determination module 230, specifically including the following:

[0119] The resistance detection module 220 is used to obtain the piezoresistive value by applying negative pressure to the wafer through a flexible sensor in response to the detection trigger signal.

[0120] The damage determination module 230 is used to determine the loss of the piezoresistive value using a preset damage determination formula, obtain the loss value, and determine the damage level of the loss value through a multi-level damage model.

[0121] In the above embodiments, after detecting the detection trigger signal, a flexible sensor can be used to apply negative pressure to the wafer in response to the detection trigger signal, so that it fits the wafer surface more evenly. While avoiding additional damage, it can more sensitively sense the structural changes of the wafer and obtain a more accurate piezoresistive value. Subsequently, this application can use damage judgment formulas and multi-level damage models to provide a standardized process and quantitative basis for the judgment of wafer corner defects. By substituting the piezoresistive value into the formula to calculate the loss value, and determining the damage level of the loss value according to the multi-level damage model, the detection results can be made more objective and accurate.

[0122] In one embodiment, the apparatus may further include:

[0123] The wafer identification module 210 is used to perform optical identification on the material to be detected using an optical identification unit before responding to the detection trigger signal, obtain the identification result, and output the detection trigger signal when the material to be detected is determined to be a wafer through the identification result.

[0124] In one embodiment, the optical identification unit in the wafer identification module 210 may include an LED light source and a photoresistor; the wafer identification module 210 may further include:

[0125] The light source activation submodule is used to activate the LED light source after sensing that the material to be detected has been placed at the detection position.

[0126] The light reflection submodule is used to reflect light from the material to be tested using an LED light source, forming reflected light.

[0127] The resistance detection submodule is used to detect the resistance of reflected light using a photoresistor to obtain the resistance value.

[0128] The material identification submodule is used to identify the material to be tested based on a preset threshold and resistance value, and obtain the identification result.

[0129] In one embodiment, the material identification submodule may include:

[0130] The resistance value determination unit is used to determine whether the resistance value is lower than a preset threshold.

[0131] The first determining unit is used to determine that the identification result of the material to be detected is a wafer when the resistance value is lower than a preset threshold.

[0132] The second determining unit is used to determine that the identification result of the material to be detected is not a wafer when the resistance value is not lower than a preset threshold.

[0133] In one embodiment, the wafer identification module 210 may further include:

[0134] The circuit activation submodule is used to activate the interlock control circuit when the identification result determines that the material to be detected is a wafer; the interlock control circuit includes a comparator circuit and a push-button lock.

[0135] The button activation submodule is used to output a high level to the button lock through a comparator circuit, so that the relay in the button lock is activated and the defect detection button is unlocked.

[0136] In one embodiment, the resistance detection module 220 may include:

[0137] The sensor negative pressure submodule is used to apply direct current to the hydrogel flexible sensor so that the hydrogel flexible sensor applies negative pressure to the edges and corners of the wafer with a pressure value corresponding to the direct current.

[0138] The resistance acquisition submodule is used to acquire the resistance value of the wafer after it is subjected to negative pressure through the microcontroller unit, and obtain the piezoresistive value.

[0139] In one embodiment, the damage determination formula in the damage determination module 230 may include:

[0140]

[0141] In the formula, Indicates the loss value; This indicates the piezoresistive value when the flexible sensor applies negative pressure to the wafer; This represents the reference resistance value of the flexible sensor.

[0142] In one embodiment, the apparatus may further include:

[0143] The result display module 240 is used to upload the damage level to the display module and perform graded alarms in the display module based on the damage level.

[0144] In one embodiment, the display module in the result display module 240 may include a display screen, indicator lights, and a buzzer; wherein, the result display module 240 may further include:

[0145] The style determination submodule is used to determine the display style and indicator color corresponding to the damage level.

[0146] The results display submodule is used to display the damage level on the display screen using a display style, and to display the indicator lights using indicator colors.

[0147] The buzzer alarm submodule is used to trigger a buzzer alarm if the damage level is severe.

[0148] In one embodiment, this application also provides a wafer corner defect detection device, which stores computer-readable instructions that, when executed by one or more processors, cause the one or more processors to perform the steps of the wafer corner defect detection method as described in any of the above embodiments.

[0149] Specifically, a wafer edge defect detection device can consist of an optical recognition module, a flexible sensor, a microcontroller unit, and a display module; specifically including the following:

[0150] The optical recognition module is used to perform optical recognition on the material to be tested, obtain the recognition result, and output a detection trigger signal when the material to be tested is determined to be a wafer based on the recognition result.

[0151] The flexible sensor is used to respond to a detection trigger signal and apply negative pressure to the wafer to obtain the piezoresistive value.

[0152] The microcontroller unit is used to determine the loss of the piezoresistive value using a preset damage determination formula, obtain the loss value, and determine the damage level of the loss value through a multi-level damage model;

[0153] The display module is used to receive the damage level uploaded by the microcontroller unit and to issue graded alarms based on the damage level.

[0154] The wafer edge defect inspection device may also include a power supply component configured to perform power management for the wafer edge defect inspection device, a wired or wireless network interface configured to connect the wafer edge defect inspection device to a network, and an input / output (I / O) interface. The wafer edge defect inspection device can operate on an operating system stored in memory, such as Windows Server™, Mac OS X™, Unix™, Linux™, Free BSD™, or similar.

[0155] Those skilled in the art will understand that the structure of the wafer edge defect detection equipment described above is only a part of the structure related to the solution of this application, and does not constitute a limitation on the equipment on which the solution of this application is applied. The specific equipment may include more or fewer components, or combine certain components, or have different component arrangements.

[0156] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0157] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The various embodiments can be combined as needed, and the same or similar parts can be referred to each other.

[0158] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for detecting wafer edge defects, characterized in that, The method includes: In response to the detection trigger signal, a negative pressure operation is applied to the wafer using a flexible sensor to obtain the piezoresistive value; The loss of the piezoresistive value is determined by a preset damage determination formula, and the damage level of the loss value is determined by a multi-level damage model.

2. The wafer edge defect detection method according to claim 1, characterized in that, The method further includes: Before responding to the detection trigger signal, an optical recognition unit performs optical recognition on the material to be detected to obtain a recognition result. When the material to be detected is determined to be a wafer through the recognition result, the detection trigger signal is output.

3. The wafer edge defect detection method according to claim 2, characterized in that, The optical recognition unit includes an LED light source and a photoresistor; The optical recognition unit performs optical recognition on the material to be detected to obtain the recognition result, including: The LED light source is activated after the material to be tested is detected being placed at the detection position; The LED light source is used to reflect light off the material to be tested, forming reflected light; The resistance value is obtained by detecting the resistance of the reflected light using the photoresistor. The material to be detected is identified based on a preset threshold and the resistance value, and the identification result is obtained.

4. The wafer edge defect detection method according to claim 3, characterized in that, The process of identifying the material to be detected based on a preset threshold and the resistance value, and obtaining the identification result, includes: Determine whether the resistance value is lower than a preset threshold; If so, then the identification result of the material to be tested is determined to be a wafer; If not, then the identification result of the material to be tested is determined to be a wafer.

5. The wafer edge defect detection method according to claim 2, characterized in that, The step of using an optical recognition unit to perform optical recognition on the material to be detected before responding to the detection trigger signal, obtaining a recognition result, and outputting the detection trigger signal when the material to be detected is determined to be a wafer based on the recognition result, further includes: When the identification result determines that the material to be detected is a wafer, the interlocking control circuit is activated; the interlocking control circuit includes a comparator circuit and a push-button lock. A high-level signal is output to the push-button lock via a comparator circuit, causing the relay in the push-button lock to engage and unlock the defect detection button; after the defect detection button is triggered, a detection trigger signal is output.

6. The wafer edge defect detection method according to claim 1, characterized in that, The process of applying negative pressure to the wafer using a flexible sensor to obtain a piezoresistive value includes: A direct current is applied to the hydrogel flexible sensor so that the hydrogel flexible sensor applies negative pressure to the edges of the wafer using a pressure value corresponding to the direct current. The resistance value of the hydrogel flexible sensor under negative pressure is obtained by collecting the resistance value through the microcontroller unit.

7. The wafer edge defect detection method according to claim 1, characterized in that, The damage determination formula includes: In the formula, Indicates the loss value; This indicates the piezoresistive value when the flexible sensor applies negative pressure to the wafer; This represents the reference resistance value of the flexible sensor.

8. The wafer edge defect detection method according to claim 1, characterized in that, The method further includes: The damage level is uploaded to the display module, and a graded alarm is generated in the display module based on the damage level.

9. The wafer edge defect detection method according to claim 8, characterized in that, The display module includes a display screen, indicator lights, and a buzzer; The step of issuing graded alarms in the display module based on the damage level includes: Determine the display style and indicator color corresponding to the damage level; The damage level is displayed on the screen using the aforementioned display style, and the indicator light is displayed using the aforementioned indicator color. If the damage level is severe, the buzzer will be triggered to sound an alarm.

10. A wafer edge defect detection device, characterized in that, include: The resistance detection module is used to obtain the piezoresistive value by applying negative pressure to the wafer through a flexible sensor in response to a detection trigger signal. The damage determination module is used to determine the loss of the piezoresistive value using a preset damage determination formula, obtain the loss value, and determine the damage level of the loss value through a multi-level damage model.

11. A wafer edge defect detection device, characterized in that, The device includes a flexible sensor and a microcontroller unit; The flexible sensor is used to respond to a detection trigger signal to apply negative pressure to the wafer and obtain a piezoresistive value. The microcontroller unit is used to determine the loss of the piezoresistive value using a preset damage determination formula, obtain the loss value, and determine the damage level of the loss value through a multi-level damage model.

12. The wafer edge defect detection equipment according to claim 11, characterized in that, The device also includes an optical recognition module; The optical recognition module is used to perform optical recognition on the material to be detected, obtain the recognition result, and output a detection trigger signal when the material to be detected is determined to be a wafer through the recognition result.

13. The wafer edge defect detection equipment according to claim 11, characterized in that, The device also includes a display module; The display module is used to receive the damage level uploaded by the microcontroller unit and to issue graded alarms based on the damage level.

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