Stress field-electric field coupled cable semiconductor layer scratch simulation and detection platform

Abstract

The invention discloses a stress field-electric field coupled cable semiconductor layer scratch simulation and detection platform. The platform comprises a sample fixing and stress simulation module, a scratch generation and morphology acquisition module, an electric field loading and field intensity surveying and mapping module and a central control and synchronization module which are fixed on a rigid base. The sample fixing and stress simulation module adopts a pair of V-shaped grooves which are folded up and down to be matched with a piezoelectric actuator to serve as a clamp, and a pair of radial stress simulation devices which are driven by a servo linear motor directly apply high-precision radial extrusion force to a cable so as to simulate operation stress. Scratch generation of a cable semiconductor layer is simulated through the scratch generation and morphology acquisition module, and electric field distribution of the semiconductor layer in a scratch state is detected through the electric field loading and field intensity surveying and mapping module. The platform can complete scratch generation, three-dimensional shape acquisition, stress distribution surveying and mapping, electric field distribution surveying and mapping and risk evaluation under a stress-electric field coupling working condition, overcomes the technical vacancy of multi-physics field coupling detection of cable semiconductor layer scratch defects by existing detection equipment, and is of great significance to improvement of safety and operation reliability of electrical equipment.

Description

Technical Field

[0001] This invention relates to a stress-electric field coupled cable semiconductor layer scratch simulation and detection platform, belonging to the field of high-voltage power equipment testing technology. Background Technology

[0002] With the continuous expansion of my country's power grid, power cables, due to their advantages such as stable transmission performance, high reliability, small footprint, and minimal impact on the urban landscape, have gradually replaced overhead lines and become the main carrier for urban power transmission. Ensuring the safe and stable operation of high-voltage cable systems is of great significance for maintaining the reliable power supply of the entire power grid.

[0003] In cable structures, the outer semiconductor shielding layer plays a crucial role in eliminating tip discharge and partial discharge on the surface of the main insulation layer, ensuring a uniform electric field distribution. The integrity of the interface state of this layer directly determines the uniformity of the electric field distribution. If this layer is damaged, it may cause electric field concentration, induce partial discharge, and eventually lead to deterioration of the main insulation or even breakdown under long-term effects.

[0004] During actual laying and installation, the semiconductor layer of cables is highly susceptible to damage. Especially during the installation of cable accessories, the processes of removing the insulation shield, grinding, and installing stress cones are cumbersome and the construction conditions are complex. Improper tool use, residual metal debris, or human error can easily create fine scratches on the surface of the semiconductor layer. These defects are difficult to detect with the naked eye and conventional testing methods are ineffective. However, during long-term cable operation, they are subjected to the combined effects of mechanical stress and strong electric fields, gradually evolving into the origin of insulation failures and posing significant safety hazards.

[0005] Currently, there is no good simulation and detection platform for scratch defects in the semiconductor layer of cables. Existing equipment is mostly single-function, usually assessing scratch defects under a single mechanical stress or electric field, lacking detection under multi-physics coupled conditions, and thus deviating from the actual operating conditions. Therefore, proposing a stress-electric field coupled simulation and detection platform for scratches in the semiconductor layer of cables is of great significance for improving the safety and operational reliability of electrical equipment. Summary of the Invention

[0006] This invention aims to overcome the stress simulation distortion of existing cable semiconductor layer scratch detection devices and improve detection functionality. To address the shortcomings of a single approach, this invention provides a stress-electric field coupled platform for simulating and detecting scratches in the semiconductor layer of a cable. This platform can accurately and reliably reproduce the true stress state of the cable stress cone, and achieve multi-physics field coupled detection of scratch defects and accurate risk assessment of scratch defects in the semiconductor layer of the cable through scratch generation and electric field superposition.

[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0008] A stress-electric field coupled cable semiconductor layer scratch simulation and detection platform, characterized in that it comprises: a sample fixation and stress simulation module, a scratch generation and morphology acquisition module, an electric field loading and field strength mapping module, and a central control and synchronization module. The sample fixation and stress simulation module, the scratch generation and morphology acquisition module, and the electric field loading and field strength mapping module are all fixedly installed on a rigid base. The sample fixation and stress simulation module includes: two pairs of cable end positioning V-grooves, symmetrically fixedly installed on the rigid base, used to clamp both ends of the cable to achieve sample fixation; a pair of radial stress simulation devices, symmetrically arranged between the cable end positioning modules and fixed on the rigid base; each radial stress simulation device includes a servo linear motor and a contouring pressure head driven by the motor. The scratch generation and morphology acquisition module includes: a three-axis precision displacement stage, fixedly mounted on the rigid base, for controlling the movement of the diamond scratch needle and the laser confocal microscope probe; a diamond scratch needle, mounted on the displacement stage, for etching on the surface of the cable semiconductor layer to simulate scratch generation; and a laser confocal microscope probe, coaxially or adjacent to the diamond scratch needle, for synchronously scanning and acquiring the three-dimensional morphology data of the scratch. The electric field loading and field strength mapping module includes: a high-voltage generator for applying high voltage to the cable sample to simulate the cable's operating environment; a sensor array mounted on a lifting mechanism for non-contact scanning at a set height above the cable surface to map the electric field distribution on its surface; and a silver-plated copper double-layer braided mesh shield to suppress external corona interference during the measurement process. The central control and synchronization module communicates with and controls the servo linear motor, causing it to move synchronously in opposite directions, driving the contouring indenter to apply radial extrusion force to the cable sample to simulate its mechanical state during operation.

[0009] The stress-electric field coupled cable semiconductor layer scratch simulation and detection platform includes a cable end positioning module comprising a contoured V-groove that closes at both ends and a piezoelectric actuator that drives the V-groove. The curvature of the clamping surface of the contoured V-groove matches the curvature of the target cable, and the piezoelectric actuator is used to provide high-speed, high-rigidity clamping force.

[0010] The stress field-electric field coupled cable semiconductor layer scratch simulation and detection platform includes a radial stress simulation device containing stress plates symmetrically distributed on both sides of the reserved scratch area of ​​the cable semiconductor layer. These plates are used to monitor in real time the pressure applied by the conformal pressure head and the stress distribution on the cable. The central control and synchronization module performs closed-loop force control on the servo linear motor based on the feedback signal from the stress plates to maintain pressure stability.

[0011] The stress-electric field coupled cable semiconductor layer scratch simulation and detection platform includes a scratch generation and morphology acquisition module comprising: a triaxial precision displacement stage, fixedly mounted on a rigid base, for providing precise movement along the three orthogonal directions (X, Y, and Z); a diamond scratching needle, mounted on the moving part of the displacement stage, for generating scratches on the cable surface at a controllable speed and depth under the drive of the displacement stage; and a laser confocal microscope probe, coaxially or adjacent to the diamond scratching needle, for scanning the scratched area simultaneously or after scratch generation to obtain its three-dimensional surface morphology data. The central control and synchronization module of the stress-electric field coupled cable semiconductor layer scratch simulation and detection platform controls the working timing of the triaxial precision displacement stage and the laser confocal microscope probe, ensuring that the morphology acquisition and scratch generation processes remain synchronized.

[0012] The stress-electric field coupled cable semiconductor layer scratch simulation and detection platform, with an electric field loading and field strength mapping module, includes: a high-voltage generator for generating and outputting power frequency or DC high voltage, which is connected to the conductor of the cable sample via wires; a sensor array mounted on an independently controlled Z-axis lifting mechanism, which, under the control of the central control and synchronization module, descends to a set non-contact height above the cable surface and performs two-dimensional scanning mapping of the electric field strength in the scratch area and its surroundings; and a silver-plated copper double-layer braided mesh shield surrounding the sensor array and the detection area of ​​the cable sample to suppress electromagnetic interference from corona discharge generated by the high voltage on the external environment and the internal measurement process.

[0013] The stress-electric field coupled cable semiconductor layer scratch simulation and detection platform uses a central control and synchronization module to control the start-stop timing of the high voltage generator's output voltage and the scanning timing of the sensor array, ensuring that electric field mapping is performed under stable voltage.

[0014] The stress-electric field coupled cable semiconductor layer scratch simulation and detection platform includes the following steps in its cable semiconductor layer scratch detection method: S1: Clamp the sample, place the cable sample on the contoured V-groove of the end positioning module, and start the driver to fasten and lock both ends of the cable. S2: Stress simulation, controlling the pair of radial stress simulation devices to move synchronously towards each other, so that the conforming pressure head contacts both sides of the cable sample and applies a pair of preset radial extrusion forces, and keeps the pressure stable to obtain cable stress distribution data; S3: Scratch generation and morphology acquisition. Under the condition of maintaining the radial extrusion pressure, the three-axis precision displacement stage is controlled to move along a predetermined trajectory, driving the diamond scratching needle to generate scratches on the cable surface, and simultaneously triggering the laser confocal microscope probe to scan and acquire the three-dimensional morphology data of the scratches. S4: Electric field mapping, controlling the high voltage generator to apply high voltage to the cable, and controlling the lifting mechanism to drive the sensor array to descend to a set non-contact height, and then controlling the sensor array to perform a two-dimensional scan of the scratched area to obtain electric field distribution data; S5: Data analysis and output, receiving the three-dimensional topography data, cable stress distribution data and electric field distribution data, calculating and outputting the stress field-electric field comprehensive distortion for assessing the risk of scratch defects.

[0015] In the stress-electric field coupled cable semiconductor layer scratch simulation and detection platform, in step S2, the magnitude of the radial extrusion force is preset according to the target stress, the cable's geometric parameters and material properties through a calculation model. Attached Figure Description

[0016] Figure 1 The diagram shows the front view of the stress-electric field coupled cable semiconductor layer scratch simulation and detection platform.

[0017] Figure 2 This diagram illustrates the cable fixing method for a stress-electric field coupled cable semiconductor layer scratch simulation and detection platform.

[0018] Figure 3 This is a stress distribution diagram of a cable semiconductor layer scratch simulation and detection platform based on stress field-electric field coupling.

[0019] Figure 4 This is a flowchart of a method for simulating and detecting semiconductor scratches in cables based on stress field-electric field coupling. Detailed Implementation

[0020] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0021] A stress-electric field coupled cable semiconductor scratch detection platform, characterized by comprising: a sample fixation and stress simulation module, a scratch generation and morphology acquisition module, an electric field loading and field strength measurement module, and a central control and synchronization module, etc. Figure 1 As shown, the sample fixation and stress simulation module, the scratch generation and morphology acquisition module, and the electric field loading and field strength measurement module are all fixedly mounted on a rigid base. Figure 1 As shown, the sample fixing and stress simulation module includes: two pairs of cable end positioning V-grooves, symmetrically fixedly installed on the rigid base, used to fasten and constrain the two ends of the cable sample; a pair of radial stress simulation devices, symmetrically arranged between the pair of cable end positioning modules and fixed on the rigid base; each actuator includes a servo linear motor and a contouring pressure head driven by the motor. Figure 1As shown, the scratch generation and morphology acquisition module includes: a three-axis precision displacement stage, fixedly mounted on the rigid base, used to control the movement of the scratch generation and morphology acquisition module; a diamond scratching needle, mounted on the displacement stage, used to generate scratches on the cable surface; and a laser confocal microscopy probe, coaxially or adjacent to the diamond scratching needle, used to synchronously scan and acquire the three-dimensional morphology data of the scratches. Figure 1 As shown, the electric field loading and field strength mapping module includes: a high-voltage generator for applying high voltage to the cable sample to simulate the cable's operating environment; a sensor array mounted on a lifting mechanism for non-contact scanning at a set height above the cable surface to map the electric field distribution on its surface; and a silver-plated copper double-layer braided mesh shield to suppress external corona interference during the measurement process. Figure 1 As shown, the central control and synchronization module communicates and controls the servo linear motor, causing it to move synchronously in opposite directions, driving the contouring pressure head to apply radial extrusion force to the cable sample placed therein, in order to simulate its mechanical state during operation.

[0022] A stress-electric field coupled cable semiconductor layer scratch simulation and detection platform is presented. The cable end positioning module includes a contoured V-groove that closes vertically and a piezoelectric actuator that drives the V-groove. The curvature of the clamping surface of the contoured V-groove matches the curvature of the target cable. The piezoelectric actuator provides high-speed, high-rigidity clamping force. Figure 2 As shown, when the sample is fixed, the cable sample is placed horizontally between a pair of end positioning modules, and the piezoelectric clamp is driven to close the contoured V-groove, thereby applying rigid constraints to both ends of the cable.

[0023] A stress-electric field coupled cable semiconductor layer scratch simulation and detection platform, such as... Figure 3 As shown, the radial stress simulation device also includes stress plates symmetrically distributed on both sides of the pre-reserved scratch area of ​​the cable's semiconductor layer, used to monitor in real time the pressure applied by the conformal pressure head and the stress distribution on the cable. During stress simulation, a pair of radial stress simulation devices are controlled to move synchronously towards each other, such as... Figure 1 As shown, a servo linear motor drives the contouring pressure head to move radially towards each other at a speed of 0.1 mm / s, while a stress plate monitors the contact pressure in real time. When the detected contact force exceeds 5 N, the central control and synchronization module performs closed-loop force control on the servo linear motor based on the feedback signal from the stress plate, smoothly increasing the radial extrusion pressure to the set value and maintaining stability. This creates a uniformly distributed simulated stress field inside the cable and records the cable stress distribution data throughout the process.

[0024] After the stress field stabilizes, such as Figure 1As shown, a three-axis precision displacement stage moves along a preset trajectory, driving a diamond scratching needle to generate a 10mm long scratch on the cable surface at a speed of 5.0mm / s. A laser confocal microscope probe works synchronously with the scratching needle to perform three-dimensional morphological scanning of the scratched area, obtaining accurate scratch depth and contour morphology data.

[0025] After the scratch is formed, such as Figure 1 As shown, the lifting mechanism drives the sensor array to descend to a position 0.5 mm from the cable surface to begin measurement. A 35 kV power frequency voltage is applied by a high-voltage generator, and the sensor array performs a two-dimensional electric field scan of the scratch area in 0.2 mm increments. The silver-plated copper double-layer braided mesh shield remains closed during the measurement process to suppress external electromagnetic interference. The sensor array measures and obtains the electric field intensity distribution data around the scratch. The flowchart of the stress-electric field coupled cable semiconductor scratch simulation and detection method is as follows: Figure 3 As shown, it includes the following steps: S1: Clamp the sample, place the cable sample on the contoured V-groove of the end positioning module, and start the driver to fasten and lock both ends of the cable. S2: Stress simulation, controlling the pair of radial stress simulation devices to move synchronously towards each other, so that the conforming pressure head contacts both sides of the cable sample and applies a pair of preset radial extrusion forces, and keeps the pressure stable to obtain cable stress distribution data; S3: Scratch generation and morphology acquisition step: Under the condition of maintaining the radial extrusion pressure, control the three-axis precision displacement stage to move along a predetermined trajectory, drive the diamond scratching needle to generate scratches on the cable surface, and simultaneously trigger the laser confocal microscope probe to scan and acquire the three-dimensional morphology data of the scratches. S4: Electric field mapping, controlling the high voltage generator to apply high voltage to the cable, and controlling the lifting mechanism to drive the sensor array to descend to a set non-contact height, and then controlling the sensor array to perform a two-dimensional scan of the scratched area to obtain electric field distribution data; S5: Data Analysis and Output: Receive the three-dimensional topography data, cable stress distribution data, and electric field distribution data, calculate and output the stress-electric field integrated distortion for assessing the risk of scratch defects.

[0026] Throughout the process, the central control module coordinates the working sequence of each module through the fiber optic synchronization module, ensuring the spatiotemporal consistency of stress loading, scratch generation, morphology acquisition, and electric field mapping. The system fuses the acquired 3D morphology data, cable stress distribution data, and electric field distribution data, and calculates evaluation indicators based on morphology characteristic parameters, cable stress distribution parameters, and electric field distortion parameters.

Claims

1. A stress-electric field coupled platform for simulating and detecting scratches on the semiconductor layer of a cable, characterized in that, include: The system comprises modules for sample fixation and stress simulation, scratch generation and morphology acquisition, electric field loading and field strength measurement, and central control and synchronization. The sample fixation and stress simulation module, scratch generation and morphology acquisition module, and electric field loading and field strength measurement module are all fixedly mounted on a rigid base. The sample fixation and stress simulation module includes: two pairs of cable end positioning V-grooves, symmetrically fixedly installed on the rigid base, used to clamp the two ends of the cable to fix the sample; a pair of radial stress simulation devices, symmetrically arranged between the cable end positioning modules and fixed on the rigid base; each radial stress simulation device includes a servo linear motor and a contouring pressure head driven by the motor. The scratch generation and morphology acquisition module includes: a three-axis precision displacement stage, fixedly mounted on the rigid base, used to control the movement of the diamond scratch needle and the laser confocal microscope probe; a diamond scratch needle, mounted on the displacement stage, used to scribble on the surface of the cable semiconductor layer to simulate scratch generation; and a laser confocal microscope probe, coaxially or adjacent to the diamond scratch needle, used to synchronously scan and acquire the three-dimensional morphology data of the scratch. The electric field loading and field strength mapping module includes: a high-voltage generator for applying high voltage to the cable sample to simulate the working environment of the cable; a sensor array mounted on a lifting mechanism for non-contact scanning at a set height above the cable surface to map the electric field distribution on its surface; and a silver-plated copper double-layer braided mesh shield to suppress external corona interference during the measurement process. The central control and synchronization module communicates with and controls the servo linear motor, causing it to move synchronously in opposite directions, driving the contouring pressure head to apply radial extrusion force to the cable sample to simulate its mechanical state during operation.

2. The platform according to claim 1, characterized in that, The cable end positioning module includes a contoured V-groove that closes at the top and bottom and a piezoelectric actuator that drives the V-groove. The curvature of the clamping surface of the contoured V-groove is required to match the curvature of the target cable. The piezoelectric actuator is used to provide a precise and highly rigid clamping force.

3. The platform according to claim 1, characterized in that, The radial stress simulation device also includes stress plates symmetrically distributed on both sides of the pre-reserved scratch area of ​​the cable semiconductor layer, used to monitor the pressure applied by the conformal pressure head and the stress distribution on the cable in real time; the central control and synchronization module performs closed-loop force control on the servo linear motor according to the feedback signal of the stress plates, thereby achieving stable pressure maintenance.

4. The platform according to claim 1, characterized in that, The scratch generation and morphology acquisition module includes: a three-axis precision displacement stage, fixedly mounted on the rigid base, for providing precision movement along the three orthogonal directions X, Y, and Z; a diamond scratching needle, mounted on the moving part of the displacement stage, for generating scratches on the cable surface at a controllable speed and depth under the drive of the displacement stage; and a laser confocal microscope probe, coaxially or adjacent to the diamond scratching needle, for scanning the scratched area simultaneously or after the scratch generation to obtain its three-dimensional surface morphology data.

5. The platform according to claim 4, characterized in that, The central control and synchronization module controls the working timing of the three-axis precision displacement stage and the laser confocal microscopy probe to ensure that the morphology acquisition and scratch generation processes are synchronized.

6. The platform according to claim 1, characterized in that, The electric field loading and field strength mapping module includes: a high-voltage generator for generating and outputting power frequency or DC high voltage, which is connected to the conductor portion of the cable sample via wires; a sensor array mounted on an independently controlled lifting mechanism, which, under the control of the central control and synchronization module, descends to a set height close to the cable surface but not in contact, and performs two-dimensional scanning mapping of the electric field strength in the scratched area and its surroundings; and a silver-plated copper double-layer braided mesh shield surrounding the sensor array and the detection area of ​​the cable sample, for suppressing electromagnetic interference from corona discharge generated by the high voltage to the external environment and the internal measurement process.

7. The platform according to claim 6, characterized in that, The central control and synchronization module controls the start-stop timing of the high-voltage generator's output voltage and the scanning timing of the sensor array to ensure that electric field mapping is performed under stable voltage.

8. The cable semiconductor layer scratch detection method according to claims 1-7, characterized in that, Includes the following steps: S1: Clamp the sample, place the cable sample on the contoured V-groove of the end positioning module, and start the driver to fasten and lock both ends of the cable. S2: Stress simulation, controlling the pair of radial stress simulation devices to move synchronously towards each other, so that the conforming pressure head contacts both sides of the cable sample and applies a pair of preset radial extrusion forces, and keeps the pressure stable to obtain cable stress distribution data; S3: Scratch generation and morphology acquisition. Under the condition of maintaining the radial extrusion pressure, the three-axis precision displacement stage is controlled to move along a predetermined trajectory, driving the diamond scratching needle to generate scratches on the cable surface, and simultaneously triggering the laser confocal microscope probe to scan and acquire the three-dimensional morphology data of the scratches. S4: Electric field mapping, controlling the high voltage generator to apply high voltage to the cable, and controlling the lifting mechanism to drive the sensor array to descend to a set non-contact height, and then controlling the sensor array to perform a two-dimensional scan of the scratched area to obtain electric field distribution data; S5: Data analysis and output, receiving the three-dimensional topography data, cable stress distribution data and electric field distribution data, calculating and outputting the stress field-electric field comprehensive distortion for assessing the risk of scratch defects.

9. The method according to claim 8, characterized in that, In step S2, the magnitude of the radial extrusion force is predetermined by a calculation model based on the target stress, the cable's geometric parameters, and material properties.

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