Smart panel using shape memory alloy poppet valve actuator

Abstract

Embodiments of the present disclosure relate to a panel implementing a poppet valve to change a nozzle cross-section. In one embodiment, a panel is provided. The panel includes a body, a plurality of apertures in the body, and a plurality of poppet valve assemblies. The poppet valve assembly includes a poppet valve configured to travel in a first portion of the bore and create a variable passage in a second portion of the bore. The poppet valve assembly further includes a first spring connected to the poppet valve and operable to move the poppet valve in a first direction when connected to electrical power; and a second spring connected to the poppet valve and moving the poppet valve in a second direction opposite to the first direction when the power is reduced or terminated.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to a method and apparatus for distributing gas in a processing chamber. Specifically, embodiments of the present disclosure relate to a faceplate that implements a poppet valve to vary a nozzle cross-section. BACKGROUND

[0002] In the fabrication of integrated circuits, deposition processes, such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), are used to deposit films of various materials on semiconductor substrates. In other operations, layer modification processes, such as etching, are used to expose a portion of a layer for further processing. Frequently, such processes are used in a repetitive manner to fabricate various layers of an electronic device, such as a semiconductor device.

[0003] Conventional processing chambers utilize a showerhead to modify the gas flow to a substrate in order to achieve a desired layer geometry thereon. However, current showerheads have a fixed nozzle diameter. In order to vary the nozzle diameter, a faceplate needs to be changed. Having multiple designs of faceplates often results in downtime to replace one faceplate with another faceplate of a different design for a new process operation. Such designs increase the cost of device fabrication and decrease the throughput of the processing system.

[0004] As such, there is a need for improved faceplates for processing substrates. SUMMARY

[0005] In one embodiment, a faceplate is provided. The faceplate includes a body, a plurality of holes in the body, and a plurality of poppet valve assemblies. Each hole included in the plurality of holes has at least a first portion having a first diameter and a second portion having a second diameter. The poppet valve assembly includes a poppet valve configured to travel in the first portion of the hole and create a variable passage in the second portion of the hole. The poppet valve assembly further includes a first spring connected to the poppet valve and operable to move the poppet valve in a first direction when connected to power and a second spring connected to the poppet valve and moves the poppet valve in a second direction opposite the first direction when power is reduced or terminated.

[0006] In another embodiment, a processing chamber is provided. The processing chamber includes an inlet port disposed in a lid and a faceplate disposed below the lid, below the inlet port. The faceplate includes a body and a plurality of holes extending through the body of the faceplate. Gas from the inlet port flows through the holes. The faceplate further includes a plurality of poppet valve assemblies disposed in the holes, the poppet valve assemblies operable to change a flow area of the holes by actuating the poppet valve assemblies, and a plurality of wires operable to supply power to the poppet valve assemblies to affect a position of the poppet valve assemblies. The processing chamber further includes a power supply to supply power to the wires and a controller operable to control actuation of the poppet valve assemblies.

[0007] In another embodiment, a method for adjusting flow through a faceplate is provided. The method includes supplying power to a plurality of poppet valve assemblies via a power supply to cause each poppet valve assembly to move from a first position to a second position. The plurality of poppet valve assemblies are disposed in a plurality of holes of the faceplate, and the power is applied to a first spring included in each poppet valve assembly. The method further includes flowing a gas through the plurality of holes in the faceplate and reducing or terminating the power supplied to the plurality of poppet valve assemblies to cause a second spring included in each poppet valve assembly to return the poppet valve assembly to the first position. BRIEF DESCRIPTION OF DRAWINGS

[0008] In order that the manner in which the above-recited features of the present disclosure are attained and utilized can be understood in detail, a more particular description of the disclosure, briefly summarized above, can be had by reference to the embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only example embodiments and therefore are not to be considered as limiting the scope of the disclosure, and can allow for other equally effective embodiments.

[0009] Figure 1 is a cross-sectional view of a processing chamber according to one embodiment.

[0010] Figure 2 is an isometric view of a poppet valve assembly according to one embodiment.

[0011] Figure 3 is a top view of a faceplate according to one embodiment.

[0012] Figure 4 is a flowchart of a method of operating a faceplate having poppet valve assemblies according to one embodiment.

[0013] Figures 5A-5B is a cross-sectional view of a faceplate during a method according to one embodiment. Figure 4

[0014] ​To facilitate an understanding of this description, like reference characters are used to identify like elements in the figures. It is intended that elements and features of one embodiment can be beneficially incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0015] Embodiments of the present disclosure generally relate to a method and apparatus for distributing gas in a processing chamber. In particular, embodiments of the present disclosure relate to a faceplate that implements poppet valves to vary the nozzle cross-section. A plurality of poppet valve assemblies are coupled to the faceplate and are operable to vary the nozzle cross-section of apertures in the faceplate in order to modify the flow distribution of gas flowing therethrough. A method of processing a substrate using gas distribution is also disclosed.

[0016] Figure 1 is a schematic arrangement of an exemplary processing chamber 100 according to one embodiment. The processing chamber 100 has a body 102 with a sidewall 104 and a base 106. A lid assembly 108 is coupled to the body 102 to define a processing volume 110 therein. The body 102 is generally formed of metal, such as aluminum or stainless steel, but can utilize any material suitable for processing therein. A substrate support 112 is disposed within the processing volume 110 and supports a substrate W during processing within the processing chamber 100. The substrate support 112 includes a support body 114 coupled to a shaft 116. The shaft 116 is coupled to a lower surface of the support body 114 and extends out of the body 102 through an opening in the base 106. The shaft 116 is coupled to an actuator 120 to move the shaft 116 and the support body 114 coupled thereto vertically between a substrate loading position and a processing position. A vacuum system 130 is fluidly coupled to the processing volume 110 in order to evacuate gas from the processing volume 110.

[0017] To facilitate processing of the substrate W in the processing chamber 100, the substrate W is disposed on an upper surface of the support body 114 opposite the shaft 116. A port 122 is formed in the sidewall 104 to facilitate entry and exit of the substrate W into and out of the processing volume 110. A door 124, such as a slit valve, is actuated to selectively allow the substrate W to pass through the port 122 to load onto or remove from the substrate support 112. An electrode 126 is optionally disposed within the support body 114 and electrically coupled to a power source 128 through the shaft 116. The electrode 126 is selectively biased by the power source 128 to generate an electromagnetic field for chucking the substrate W to the upper surface of the support body 114 and / or facilitating generation or control of a plasma. In certain embodiments, a heater 190, such as a resistive heater, is disposed within the support body 114 to heat the substrate W disposed thereon.

[0018] The lid assembly 108 includes a lid 132 and a faceplate 136. The faceplate 136 is coupled to the lid 132 and bounds a gas volume 148 with the lid 132. The faceplate 136 is connected to the sidewall 104. The faceplate 136 is coupled to the base 106 and bounds the processing volume 110 with the base 106. The faceplate 136 includes a circular disk having a disk diameter. The disk diameter is between 500 mm and 600 mm. The faceplate 136 includes a plurality of holes 154 disposed through the faceplate 136. The plurality of holes 154 are further described in conjunction with Figure 3 The faceplate is further described.

[0019] The inlet port 144 is disposed within the lid 132. The inlet port 144 is coupled to a gas conduit 138. The gas conduit 138 allows gas to flow from a first gas source 140, such as a process gas source, through the inlet port 144 into the gas volume 148. A second gas source 142, such as a cleaning gas source, is optionally coupled to the gas conduit 138. The first gas source 140 supplies a process gas, such as an etching gas or a deposition gas, to the processing volume 110 to etch or deposit a layer on the substrate W. The second gas source 142 supplies a cleaning gas to the processing volume 110 to remove particle deposition from interior surfaces of the processing chamber 100.

[0020] The holes 154 are disposed through the faceplate 136. The holes 154 allow fluid communication between the processing volume 110 and the gas volume 148. During operation, gas is allowed to flow from the inlet port 144 into the gas volume 148. Subsequently, the gas flows through the holes 154 in the faceplate 136 into the processing volume 110. One or more of the plurality of holes 154 are partially covered by the poppet valve assemblies 200. The poppet valve assemblies 200 are partially disposed in the holes 154. Each of the poppet valve assemblies 200 is supported by a housing 155. Thus, the housing 155 is actuated throughout the holes 154 while maintaining the poppet valve assemblies 200 stable. The housing 155 is part of the faceplate 136. The housing 155 is designed to not impede the flow of gas through the faceplate 136. Additionally, the plurality of holes 154 have a total diameter between 10 mils and 120 mils. The poppet valve assemblies 200 are connected to a power source 150 and a controller 160. The power source 150 is connected to the poppet valve assemblies 200 via the power source wiring 118. The power source wiring 118 is further described in conjunction with Figure 2 The poppet valve assemblies 200 are further described in

[0021] The power source 150 can have any suitable type, such as a linear power source, a switching power source, an uninterruptible power source, an alternating current (AC) power source, a direct current (DC) power source, a programmable power source, a high voltage power source, or a radio frequency (RF) power source, as needed for the processing chamber 100 or the poppet valve assemblies 200.

[0022] The power supply 150 includes at least a power input and a power output. The power supply 150 can include transformers, DC-to-DC converters, rectifiers, voltage regulators, and / or filters. The power input of the power supply 150 can be configured to accept an alternating current (AC) input or a direct current (DC) input. The power output of the power supply 150 can be configured to provide an AC or DC source. The power supply 150 can include transformers for accepting an AC input and then can step up or step down to match a required voltage level. The power supply 150 can include DC-to-DC converters, such as a buck converter, a boost converter, or a buck-boost converter, to step up or step down a DC input to match a required voltage. The power supply 150 can include rectifiers with suitable topologies to accept an AC input and convert the AC input to a DC output. The power supply 150 can include voltage regulators to maintain a constant output voltage even with fluctuations in the input voltage or changes in the load. The voltage regulators can have any suitable topology, such as a linear regulator or a switching regulator. In some embodiments, the power supply 150 can include filters configured to eliminate or reduce unwanted variations, harmonics, or noise in the output voltage or current. In some embodiments, the filters can include capacitive filters, inductive filters, or inductive-capacitive filters of suitable topologies. In some embodiments, the filters can be active filters, passive filters, digital filters, or combinations thereof. In some embodiments, the power supply 150 can include various protection mechanisms, such as overcurrent protection, overvoltage protection, power conditioning, and / or short-circuit protection, to protect the power supply, the processing chamber 100, the lift valve assembly 200, and the controller 160.

[0023] The controller 160 can control processes in the processing chamber 100. The controller 160 can control gas flow from the gas sources 140 and 142. The controller can control the power supply 150 to supply power to the processing chamber 100 and the lift valve assembly 200. The controller 160 is in communication with the processing chamber 100 and is used to control processes and methods, such as the operations of the methods described herein.

[0024] The controller 160 is configured to receive data and output instructions to components of the processing chamber 100. The controller 160 is equipped with a system model of the processing chamber 100 or in communication with the processing chamber 100. The system model includes a heating model, a film uniformity model, a film deposition rate model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters, such as gas flow rates, gas pressures, processing temperatures of the substrate support 112 and / or the substrate W, rotational positions of components, heating profiles, coating conditions, and / or etching conditions, within the processing chamber 100 throughout a deposition operation and / or an etching operation. The controller 160 is further configured to store readings and calculations. The readings and calculations include previous sensor readings, such as any previous sensor readings within the processing chamber 100. The readings and calculations further include stored calculated values after sensor readings are measured by the controller 160 and run through the system model. As such, the controller 160 is configured to retrieve both stored readings and calculations, as well as save the readings and calculations for future use. Maintaining previous readings and calculations enables the controller 160 to adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0025] The controller 160 can monitor, estimate optimization parameters, calibrate one or more flow rate sensors, generate an alarm on a display, stop a deposition operation, initiate a chamber downtime period, delay a subsequent iteration of a deposition operation, initiate an etching operation, stop an etching operation, adjust a heating power, and / or otherwise adjust a process recipe.

[0026] The controller 160 includes a central processing unit (CPU) (e.g., processor), memory containing instructions, and support circuits for the CPU. The controller 160 controls various items either directly or via other computers and / or controllers. In one or more embodiments, the controller 160 is communicatively coupled to a dedicated controller, and the controller 160 serves as a central controller.

[0027] Controller 160 has any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and equipment, and subprocessors thereon or therein. The memory, or non-transitory computer-readable medium, is one or more readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital memory (local or remote). Support circuitry of controller 160 is coupled to the CPU to support it. This support circuitry includes cache, power supply, clock circuitry, input / output circuitry systems, and subsystems, etc. Operating parameters (e.g., additions) and operations are stored in memory as software routines, which are executed or invoked to transform controller 160 into a dedicated controller to control the operation of the various chambers / modules described herein. Controller 160 is configured to perform any of the operations described herein. Instructions stored in memory, when executed, cause one or more of the following operations: Figure 1 , Figure 2 , Figure 3 , Figures 5A-5B Method 400, and / or method 400, are performed in relation to the processing chamber 100. The controller 160 and the processing chamber 100 are at least part of a system for processing a substrate.

[0028] The various operations described in this article (such as...) Figure 1 , Figure 2 , Figure 3 , Figures 5A-5B The operation of method 400 can be performed automatically by controller 160, or it can be performed automatically or manually with certain operations performed by the user.

[0029] In one or more embodiments, controller 160 includes a plurality of storage devices, an input control unit, and a display unit. Controller 160 monitors the flow rate of the processed gas and / or the flow rate of the purified gas, the amount of power supplied by power supply 150, and the position of the booster valve assembly 200. In one or more embodiments, controller 160 includes multiple controllers such that stored readings and calculations, as well as system models, are stored in controllers separate from controller 160 which controls the operation of the processing chamber 100. In one or more embodiments, all system models, as well as stored readings and calculations, are stored within controller 160.

[0030] Figure 2is an isometric view of a single poppet assembly 200. The poppet assembly 200 includes a base 201, a stop 203, a first spring 205, and a second spring 207. The base 201 is connected to the stop 203. The base 201 and the stop 203 are fused together to form a single part, the poppet 202. The base 201 and the stop 203 can include polytetrafluoroethylene (PTFE) or similar material. The base 201 is configured to travel on the faceplate 136 and in the hole 154. The stop 203 is configured to create a variable passageway for gas to travel through the hole 154. The stop 203 moves with the base 201 throughout the hole 154. The first spring 205 and the second spring 207 are connected to the base 201. The first spring 205 and the second spring 207 are configured to move the base 201 and the stop 203.

[0031] The first spring 205 is made of a shape memory alloy. The shape memory alloy is formed into a first wire that is wound into a spring. In some embodiments, the shape memory alloy is Nitinol (nickel titanium). In some embodiments, the shape memory includes iron manganese silicon, copper zinc aluminum, copper aluminum nickel, or some combination thereof. The shape memory alloy changes shape in the presence of electricity. The electricity increases the temperature of the first spring 205, causing the shape memory alloy to contract and move the poppet assembly 200 in a first direction away from the hole 154. The first spring 205 has a first coil diameter between 3 mm and 6 mm. The wire forming the first spring 205 has a first wire diameter between 0.1 mm and 0.3 mm. The first spring 205 is connected to the housing 155.

[0032] The second spring 207 is a traditional spring. The second spring 207 is formed from a second wire. The second wire can include stainless steel (SST) or similar material. The second spring 207 has a second coil diameter that is less than the first coil diameter of the first spring 205. The second spring 207 is operable to assist in moving the poppet assembly 200 in a second direction toward the hole 154. The second direction is the opposite direction of the first direction. In some embodiments, the first spring 205 and the second spring 207 are enclosed in a housing (not shown) to protect the springs from the gas. The second spring 207 is connected to the housing 155. In some embodiments, the housing 155 extends around the first spring 205 and the second spring 207 to protect the springs from the gas flowing through the hole 154.

[0033] Figure 3is a top view of the faceplate 136. The poppet valve assembly 200 is positioned above the holes 154 of the faceplate 136. The activation wires 301 are connected to each first spring 205 of the poppet valve assembly 200. The activation wires 301 are each connected to the power supply wires 118, which are connected to the power supply 150. The power supply 150 sends power along the power supply wires 118, which pass to the activation wires 301. The power passes through the activation wires 301 and is applied to the first springs 205. The power contacting the first springs 205 actuates the first springs 205. The activation wires 301 are connected to the first springs 205 in metal clips disposed in the housing 155.

[0034] Figure 3 A circular pattern of holes 154 is illustrated arranged in concentric circles. In other embodiments, different patterns of holes 154 are contemplated. For example, other hole patterns include a hexagonal pattern (where each hole is surrounded by other six at a fixed angle), a rectangular grid (where each hole is a square grid), a triangular grid (where the holes form equilateral triangles), a staggered circular, a staggered rectangular, a staggered triangular, a spiral pattern, a radial pattern, an asymmetric pattern, a honeycomb pattern, or a spiral protractor pattern are also contemplated.

[0035] Figure 4 is a flowchart of a method 400 of operating the faceplate 136 with the poppet valve assembly 200. Figures 5A-5B is a cross-sectional view of the faceplate 136 during the method 400 of Figure 4 is a cross-sectional view of the faceplate 136 during the method 400 of

[0036] At operation 401, a signal is transmitted to the power supply 150 to supply power. The controller 160 signals the power supply 150 to supply power to the poppet valve assembly 200. The controller 160 indicates an amount of power, which determines a distance of actuation by the first spring 205. The distance of actuation by the first spring 205 determines a distance between each poppet valve assembly 200 and a corresponding hole 154, and thus a size of a cross-section of the gas passage 506. The gas passage 506 is a passageway that allows gas to flow through each hole 154. The gas passage 506 is defined between the stop 203 of the poppet valve assembly 200 and the first section 511 of the hole 154.

[0037] The poppet valve assembly 200 begins in the first position 501, as illustrated in Figure 5Ashown. First spring 205 and second spring 207 are in a starting position. Hole 154 has a first section 511 and a second section 515. First section 511 has a first diameter 513. In some embodiments, first diameter 513 is equal to the total diameter of hole 154 between 10 mils to 120 mils. Second section 515 has a second diameter 517. Second diameter 517 is between 250 mils and 300 mils. First section 511 is shaped to mirror the shape of stop 203. First section 511 has a step surface 519 that starts at second diameter 517 and moves to first diameter 513. In some embodiments, step surface 519 contacts stop 203 in first position 501 and gas passage 506 is closed, thereby not allowing gas to pass. In some embodiments, as shown in Figure 5A second diameter 517 and moves to first diameter 513. In some embodiments, step surface 519 does not contact stop 203 and first cross section 503 of gas passage 506 is a narrow opening that allows gas to pass through a first flow area. First cross section 503 is directly related to first position 501.

[0038] At operation 403, power is supplied to poppet valve assembly 200. Power is supplied to activation wire 301 via power source wire 118 by power source 150. First spring 205 contacts activation wire 301, thereby passing power to first spring 205. Subsequently, power heats first spring 205, thereby causing the shape memory alloy to contract. The contraction of first spring 205 causes poppet valve assembly 200 to actuate a distance away from hole 154. Poppet valve assembly 200 moves a distance corresponding to the power supplied by power source 150. In some embodiments, multiple power source wires 118 are connected to multiple activation wires 301, thereby allowing different amounts of power to be supplied to different poppet valve assemblies 200. In this way, different poppet valve assemblies 200 can actuate different distances away from hole 154.

[0039] Poppet valve assembly 200 moves to second position 505, as shown in Figure 5BThe first spring 205 and the second spring 207 are in the actuated position. The retraction of the first spring 205 and the second spring 207 raises the base 201 and the stop 203 of the poppet assembly 200. The stop 203 moves a distance away from the stepped surface 519, creating the second cross section 507 of the gas passage 506. The second cross section 507 has a larger opening than the first cross section 503 of the gas passage 506, allowing more gas to pass. The gas passage 506 has a smaller first cross section 503 caused by the poppet assembly 200 being in the first position. The second cross section 507 through which the gas travels is directly related to the power supplied by the power source 150. In some embodiments, the first cross section 503 is smaller than the second cross section 507. In some embodiments, the power varies between the poppet assemblies 200, causing some first springs 205 to receive different power. The different power causes the cross section of the gas passage 506 to vary between the apertures 154.

[0040] At operation 405, gas flows through the faceplate 136. The gas enters the gas volume 148 via the inlet port 144. The gas is supplied from the first gas source 140 and the second gas source 142 to the inlet port 144 via the gas conduit 138. In some embodiments, a first gas is supplied from the first gas source 140 and a second gas is supplied from the second gas source 142. The gas in the gas volume 148 flows through the faceplate 136 to the process volume 110. The gas in the gas volume 148 passes through the second cross section 507 of the gas passage 506 created by the poppet assembly 200 in the aperture 154. The gas flows towards the substrate support 112. The gas in the gas volume 148 can then be used to deposit, process, or etch a substrate W located on the substrate support 112.

[0041] In some embodiments, multiple gases are used for operation 405. In some embodiments, after operation 405, operation 403 is repeated with different power to move the poppet assembly 200 to a third position. The third position creates a different cross section of the gas passage 506 and operation 405 is repeated with the gas flowing through the different cross section. This process can be repeated multiple times. In some embodiments, the gas flows through the faceplate 136 before operation 401, during which the poppet assembly 200 is in the first position 501. The gas then flows through the first cross section 503 of the gas passage 506.

[0042] At operation 407, the power supply 150 reduces or terminates the power being supplied to the first spring 205. As a result, the shape memory alloy in the first spring 205 causes the first spring 205 to expand or return to the starting position. In various embodiments, the second spring 207 provides a spring force to help return the first spring 205 to the starting position. Once operation 407 is complete, the poppet valve assembly is in the first position 501 described in the middle. Figure 5A

[0043] In summary, embodiments of the present disclosure generally relate to a method and apparatus for distributing gas in a process chamber. Specifically, embodiments of the present disclosure relate to a faceplate that implements a poppet valve to vary the nozzle cross section. The poppet valve assembly is coupled to the faceplate and is operable to vary the nozzle cross section of the holes in the faceplate in order to modify the flow distribution of the gas flowing therethrough. Also disclosed is a method of processing a substrate using the gas distribution. Benefits of the present disclosure include the ability to control the flow area of the gas through the faceplate. Controlling the flow area of the gas through the faceplate allows one faceplate to be used for a variety of different processes. Using one faceplate for multiple processes reduces the cost that would otherwise arise from implementing multiple faceplates. Furthermore, the time required to replace the faceplate is eliminated. The flow area can be varied across the faceplate to ensure uniform deposition across the substrate. Embodiments of the present disclosure can be retrofitted in current process chambers, thereby reducing cost.

[0044] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof. The scope of the present disclosure is determined by the following claims.​

Claims

1. A panel, comprising: main body; A plurality of holes, said plurality of holes being in said body, wherein each hole included in said plurality of holes has at least a first portion having a first diameter and a second portion having a second diameter; as well as Multiple lift valve assemblies, the multiple lift valve assemblies including: A lift valve, configured to travel in the second portion of the orifice and create a variable passage in the first portion of the orifice; A first spring, connected to the lift valve and operable to move the lift valve in a first direction when connected to electricity; and A second spring is connected to the lift valve and is operable to move the lift valve in a second direction opposite to the first direction when the power is reduced or terminated.

2. The panel of claim 1, wherein the first spring comprises a shape memory alloy.

3. The panel of claim 2, wherein the shape memory alloy comprises nickel-titanium, iron-manganese-silicon, copper-zinc-aluminum, copper-aluminum-nickel, or some combination thereof.

4. The panel of claim 1, wherein the first spring has a coil diameter between 3 mm and 6 mm and a wiring diameter between 0.1 mm and 0.3 mm.

5. The panel of claim 1, wherein the first diameter of the first portion of the hole is between 10 mils and 120 mils and the second diameter of the second portion of the hole is between 250 mils and 300 mils.

6. The panel of claim 1, wherein the body has a disc diameter between 500 mm and 600 mm.

7. The panel of claim 1, wherein, for a first lift valve assembly included in the plurality of lift valve assemblies, when the first spring is connected to the power, the gas passage defined between the lift valve and the second position of the orifice has a larger cross-section than when the power is reduced or terminated.

8. The panel of claim 7, wherein the first direction is away from the second portion of the hole and the second direction is toward the second portion of the hole.

9. A processing chamber, comprising: The inlet port is disposed in the cover; A panel, disposed below the cover and below the inlet port, the panel comprising: main body; A plurality of holes extending through the body of the panel, wherein gas from the inlet port flows through the holes; A plurality of lift valve assemblies are disposed in the orifice, and the lift valve assemblies are operable to change the flow area of ​​the orifice by actuating the lift valve assemblies; Multiple wiring connections, which are operable to supply power to the lift valve assembly to affect the position of the lift valve assembly; A power source, which supplies power to the wiring; and A controller operable to control the actuation of the lift valve assembly.

10. The processing chamber of claim 9, wherein each of the plurality of lift valve assemblies further comprises: A lift valve, configured to travel in the orifice and create a variable passage in the orifice; A first spring is connected to the body and is configured to move the body when connected to electricity; as well as A second spring, connected to the body, is configured to move the body in the opposite direction to the first spring when the power is removed.

11. The processing chamber of claim 10, wherein the first spring comprises a shape memory alloy.

12. The processing chamber of claim 10, wherein the first spring has a coil diameter between 3 mm and 6 mm and a wiring diameter between 0.1 mm and 0.3 mm.

13. The processing chamber of claim 10, wherein the first diameter of the first portion of the orifice is between 10 mils and 120 mils and the second diameter of the second portion of the orifice is between 250 mils and 300 mils.

14. The processing chamber of claim 9, wherein the body of the panel has a disc diameter between 500 mm and 600 mm.

15. A method for adjusting the flow rate through a panel, comprising the following steps: Power is supplied to a plurality of lift valve assemblies via a power source to cause each lift valve assembly to move from a first position to a second position. The plurality of lift valve assemblies are disposed in a plurality of holes in a panel, and the power is applied to a first spring included in each lift valve assembly. The gas is allowed to flow through the plurality of holes in the panel; as well as The power supply to the plurality of lift valve assemblies is reduced or terminated so that a second spring included in each lift valve assembly returns the lift valve assembly to the first position.

16. The method of claim 15, wherein, for a first lift valve assembly included in the plurality of lift valve assemblies, when the first spring is connected to the power, the gas passage defined between the lift valve and the orifice has a larger cross-section than when the power is reduced or terminated.

17. The method of claim 16, wherein the gas flowing through the plurality of holes in the panel flows through the gas channel toward the substrate support.

18. The method of claim 16, further comprising the following steps: Before the power is supplied, gas flows through the gas channel toward the substrate support, wherein the gas channel has a smaller cross-section due to the lift valve assembly being in the first position.

19. The method of claim 16, further comprising the following steps: Different electrical powers are supplied to each of the first springs of the lift valve assembly, which is actuated to a third position via the first springs, thereby creating different cross-sections of the gas passage; as well as The gas is allowed to flow through the plurality of holes in the panel.

20. The method of claim 15, wherein the step of supplying the power to the plurality of lift valve assemblies comprises: Different amounts of electricity are supplied to different lift valve assemblies included in the plurality of lift valve assemblies to cause the second position to change across the different lift valve assemblies.

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