Integrated passive device, preparation method thereof and filter

Abstract

The invention provides an integrated passive device, a preparation method thereof and a filter. The integrated passive device provided by the invention comprises a plurality of stacked passive device modules and a conductive bonding layer, the passive device module comprises at least one passive device, and in the two adjacent passive device modules, at least one passive device module further comprises a first connecting structure electrically connected with the passive device; and in two adjacent passive device modules, a bonding layer is connected between the connecting structure of one passive device module and the other passive device module. According to the integrated passive device provided by the invention, the bonding layer is arranged between the connecting structure of one passive device module and the other passive device module to realize lamination of the two passive device modules, so that integration of a plurality of passive device modules is realized. According to the invention, different passive device modules are connected by adopting the bonding layers, the types of integrated passive devices can be enriched, and the passive device modules can be independently prepared in advance, so that the yield can be improved.

Description

Integrated passive device, preparation method thereof, and filter Technical Field

[0001] The present invention relates to the field of semiconductor device manufacturing, and specifically to an integrated passive device and a preparation method thereof, and a filter. Background Art

[0002] With the continuous development of semiconductor technology, integrated circuits have been widely used. When the components that make up an integrated circuit are passive devices, the integrated circuit is called an integrated passive device (IPD). Because integrated passive devices can provide the integration of passive components such as high-precision capacitors and high-performance inductors, they are currently attracting widespread attention in fields such as radio frequency and packaging.

[0003] Summary of the Invention

[0004] The present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes an integrated passive device, a preparation method thereof, and a filter.

[0005] In order to achieve the above objectives, in a first aspect, the present disclosure provides an integrated passive device, comprising:

[0006] A plurality of stacked passive device modules; each passive device module includes at least one passive device, and at least one of two adjacent passive device modules further includes a connection structure electrically connected to the passive device;

[0007] Conductive bonding layer; in two adjacent passive device modules, the bonding layer is connected between the connection structure of one passive device module and the other passive device module.

[0008] Optionally, the plurality of passive component modules include: a first passive component module and a second passive component module;

[0009] The passive device in the first passive device module includes a first passive device; the first passive device module further includes: the connection structure, a first dielectric layer and a second dielectric layer, the second dielectric layer being located on a side of the first dielectric layer away from the first passive device; a first via hole is formed on the first dielectric layer; and a second via hole is formed on the second dielectric layer.

[0010] The passive device in the second passive device module includes a second passive device; the second passive device module further includes a third dielectric layer located on a side of the second passive device facing the first passive device module, and a third via is opened on the third dielectric layer;

[0011] The connection structure in the first passive component module includes: a first transmission portion and a first conductive portion that are electrically connected, wherein a portion of the first transmission portion is located in the first via hole and is electrically connected to the first passive component; and at least a portion of the first conductive portion is located in the second via hole.

[0012] In which, at least part of the bonding layer is located in the third via and is electrically connected to the first conductive part and the second passive component; or, the second passive component module further includes: a connecting structure; at least part of the connecting structure in the second passive component module is located in the third via and is electrically connected to the second passive component; at least part of the bonding layer is located in the second via and is bonded to the connecting structure in the first passive component module and the connecting structure in the second passive component module, respectively.

[0013] Optionally, the passive components in the first passive component module further include a third passive component, and the third passive component is arranged in the same layer as at least a portion of the first passive component.

[0014] Optionally, the first passive component is a capacitor, and includes a second plate and a first plate sequentially arranged in a direction away from the first dielectric layer; the third passive component is a resistor, and the resistor is arranged in the same layer as the second plate;

[0015] A fourth via is also provided on the first dielectric layer; the first passive component module further includes a second transmission part, which is provided on the same layer as the first transmission part, and a portion of the second transmission part is located in the fourth via and is electrically connected to the resistor.

[0016] Optionally, the second passive component is a three-dimensional inductor or a planar inductor.

[0017] Optionally, the second passive component module further includes:

[0018] a substrate, disposed between the second passive component and the third dielectric layer;

[0019] A transmission structure passes through the substrate, with two ends of the transmission structure connected to the bonding layer and the second passive component respectively.

[0020] Optionally, the passive components in the second passive component module further include a fourth passive component; the fourth passive component is arranged on the same layer as part of the transmission structure.

[0021] Optionally, the passive components in the second passive component module further include a fourth passive component;

[0022] The fourth passive component is arranged on the same layer as part of the second passive component.

[0023] Optionally, the integrated passive component further includes: a plurality of second conductive parts, wherein the plurality of second conductive parts are electrically connected to one of the passive component modules.

[0024] Optionally, the multiple passive device modules include: an adjacent first passive device module and a second passive device module; the second passive device module also includes: a plurality of seventh transmission parts, the second conductive parts are electrically connected to the seventh transmission parts, and at least one of the seventh transmission parts is arranged on the same layer as the passive device in the second passive device module.

[0025] In a second aspect, the present disclosure provides a method for preparing an integrated passive device, comprising:

[0026] forming a plurality of passive device modules respectively, each of which includes at least one passive device, and at least one of two adjacent passive device modules further includes a connection structure electrically connected to the passive device;

[0027] The plurality of passive device modules are stacked and arranged, and in every two adjacent passive device modules, a bonding layer is connected between the connection structure in one passive device module and the other passive device module.

[0028] In a third aspect, the present disclosure provides a filter comprising the integrated passive device as described in any one of the above. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0030] FIG1 is a structural diagram of an integrated passive device in some embodiments of the present disclosure;

[0031] FIG2 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0032] FIG3 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0033] FIG4 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0034] FIG5 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0035] FIG6 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0036] FIG7 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0037] FIG8 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0038] FIG9 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0039] FIG10 is a structural diagram of a three-dimensional inductor in some embodiments of the present disclosure;

[0040] FIG11 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0041] FIG12 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0042] FIG13 is a structural diagram of a planar inductor in some other embodiments of the present disclosure;

[0043] FIG14 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0044] FIG15 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0045] FIG16 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0046] FIG17 is a structural diagram of integrated passive devices in other embodiments of the present disclosure;

[0047] FIG18 is a flow chart of a method for preparing an integrated passive device in some embodiments of the present disclosure;

[0048] FIG19 is a schematic diagram of a method for preparing an integrated passive device in some embodiments of the present disclosure;

[0049] FIG20 is a structural diagram of an integrated circuit in some other embodiments of the present disclosure;

[0050] FIG21 is a schematic diagram of a method for preparing an integrated passive device in other embodiments of the present disclosure;

[0051] FIG22 is a structural diagram of an integrated circuit in some other embodiments of the present disclosure;

[0052] FIG23 is a structural diagram of an integrated circuit in some other embodiments of the present disclosure;

[0053] FIG24 is a structural diagram of an integrated circuit in some further embodiments of the present disclosure;

[0054] FIG25 is a structural diagram of an integrated circuit in some other embodiments of the present disclosure;

[0055] FIG26 is a structural diagram of integrated passive devices in some embodiments of the present disclosure.

[0056] 1. Passive device module; 2. Bonding layer; 3. Passive device; 4. Connection structure; 11. First passive device module; 12. Second passive device module; 101. First dielectric layer; 102. Second dielectric layer; 201. Third dielectric layer; 41. First transmission unit; 42. First conductive unit; 31. First passive device; 32. Second passive device; 51. Second transmission unit; 5. Third passive device; 100. Third substrate; 200. Fourth substrate; 312. Second plate; 311. First plate; 501. Conductive layer; 301. Dielectric layer ;321, first substrate; 322, first transmission line; 323, first connecting column; 7, fourth passive component; 6, third transmission part; 202, fourth dielectric layer; 324, second transmission line; 325, spacer layer; 326, second connecting column; 71, eighth transmission part; 8, transmission structure; 81, second substrate; 82, fourth transmission part; 83, fifth transmission part; 84, sixth transmission part; 85, fifth dielectric layer; 9, second conductive part; 91, first sub-conductive part; 92, second sub-conductive part; 10, seventh transmission part; 601, sixth dielectric layer. DETAILED DESCRIPTION

[0057] The following describes the specific embodiments of the present disclosure in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure and are not intended to limit the present disclosure.

[0058] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0059] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should have the usual meanings understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0060] As used herein, "parallel" and "perpendicular" include the conditions described and conditions similar to the conditions described, and the range of the similar conditions is within an acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range for approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range for approximate perpendicularity can also be, for example, a deviation within 5°.

[0061] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0062] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0063] In the relevant technology, integrated passive devices are integrated structures of passive devices of different numbers and types, including passive resistors, passive capacitors, and passive inductors. In the process of preparing integrated passive devices, the preparation of structures such as capacitors, inductors, and resistors requires multiple steps of vacuum coating, photolithography, wet processing, and other processes. Therefore, the process for preparing integrated passive devices is numerous and complex, and the continuous production cycle of integrated passive devices is long, and the yield between the circuit layers of each process will also affect the final output yield and type of the integrated passive device. At present, there are many types of integrated passive devices required in related fields, but for some integrated passive devices with similar functions or the same modules, it is currently impossible to prepare them simultaneously. Therefore, the production capacity and yield of integrated passive devices are limited.

[0064] To address at least one of the aforementioned issues, in a first aspect, embodiments of the present disclosure provide an integrated passive device. FIG1 is a structural diagram of an integrated passive device in some embodiments of the present disclosure. FIG2 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG3 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG4 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG5 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG6 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG7 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG8 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG9 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG10 is a structural diagram of a three-dimensional inductor in some embodiments of the present disclosure. FIG11 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG12 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. FIG13 is a structural diagram of a planar inductor in other embodiments of the present disclosure. FIG14 is a structural diagram of an integrated passive device in other embodiments of the present disclosure. Figure 15 is a structural diagram of integrated passive devices in other embodiments of the present disclosure. Figure 16 is a structural diagram of integrated passive devices in other embodiments of the present disclosure. Figure 17 is a structural diagram of integrated passive devices in other embodiments of the present disclosure.

[0065] As shown in Figures 1 to 4, the integrated passive device of the present embodiment includes: a plurality of stacked passive device modules 1 and at least one conductive bonding layer 2. Each passive device module 1 includes at least one passive device 3, and at least one of two adjacent passive device modules 1 also includes at least one connection structure 4 electrically connected to the passive device 3. In the two adjacent passive device modules 1, a bonding layer 2 is connected between the connection structure 4 of one passive device module 1 and the other passive device module 1.

[0066] For example, if, in two adjacent passive component modules 1, the first passive component module 1 includes at least one passive component 3, and the second passive component module 1 includes at least one passive component 3 and at least one connection structure 4, then a bonding layer 2 is connected between the connection structure 4 of the second passive component module 1 and the passive component 3 of the first passive component module 1. If, in two adjacent passive component modules 1, the first passive component module 1 includes at least one passive component 3 and at least one connection structure 4, and the second passive component module 1 also includes at least one passive component 3 and at least one connection structure 4, then a bonding layer 2 is connected between the connection structure 4 of the first passive component module 1 and the connection structure 4 of the second passive component module 1.

[0067] The passive device module 1 of the embodiment of the present disclosure includes at least one passive device 3, or includes at least one passive device 3 and at least one connection structure 4, wherein the passive device 3 can be a passive capacitor, a passive inductor, etc. Therefore, the embodiment of the present disclosure can obtain different types of passive device modules 1 by setting the number, type and position of the passive devices in each passive device module 1, and different types of passive device modules 1 correspondingly implement different functions. Furthermore, the embodiment of the present disclosure achieves the stacking of two passive device modules 1 by setting a conductive bonding layer 2 between two adjacent passive device modules 1 and bonding the connection structure 4 of one passive device module 1 to another passive device module 1, thereby achieving the stacking of multiple passive device modules 1, that is, achieving the integration of multiple passive device modules 1. At the same time, by setting a bonding layer 2 between two adjacent passive device modules 1 and bonding different passive device modules 1, an integrated passive device can be formed; by increasing the types of passive device modules 1, the types of integrated passive devices can be further enriched. Furthermore, each passive device module 1 can be individually fabricated in advance, which helps improve the overall yield of the integrated passive device. The disclosed embodiments can also improve the yield of the integrated passive device by managing the manufacturing yield of each passive device module 1 and the yield of the bonding between passive device modules 1.

[0068] Optionally, the material of the bonding layer 2 includes tin.

[0069] In some embodiments, as shown in FIG. 5 , the plurality of passive component modules 1 include a first passive component module 11 and a second passive component module 12 that are adjacent to each other.

[0070] The passive components 3 in the first passive component module 11 include a first passive component 31. The first passive component module 11 also includes a connection structure 4, a first dielectric layer 101, and a second dielectric layer 102. The first dielectric layer 101 is located on the side of the first passive component 31 facing the second passive component module 12, and the second dielectric layer 102 is located on the side of the first dielectric layer 101 away from the first passive component 31. A first via is defined in the first dielectric layer 101, and a second via is defined in the second dielectric layer 102.

[0071] The passive components 3 in the second passive component module 12 include a second passive component 32. The second passive component module 12 also includes a third dielectric layer 201. The third dielectric layer 201 is located on the side of the second passive component 32 facing the first passive component module 11. The third dielectric layer 201 is provided with a third via.

[0072] The connection structure 4 in the first passive component module 11 includes an electrically connected first transmission portion 41 and a first conductive portion 42. A portion of the first transmission portion 41 is located within a first via in the first dielectric layer 101 and is electrically connected to the first passive component 31. For example, the first transmission portion 41 is in direct contact with the first passive component 31 and can be made of the same material. At least a portion of the first conductive portion 42 is located within a second via in the second dielectric layer 102.

[0073] At least a portion of the bonding layer 2 is located in the third via hole on the third dielectric layer 201 and is bonded to and electrically connected to the first conductive portion 42 and the second passive component 32 respectively.

[0074] In some other embodiments, as shown in FIG6 , the plurality of passive component modules include adjacent first passive component modules 11 and second passive component modules 12 .

[0075] The passive device 3 in the first passive device module 11 includes a first passive device 31. The first passive device module 11 also includes a connection structure 4, a first dielectric layer 101, and a second dielectric layer 102. The first dielectric layer 101 is located on the side of the first passive device 31 facing the second passive device module 12, and the second dielectric layer 102 is located on the side of the first dielectric layer 101 away from the first passive device 31. A first via is defined in the first dielectric layer 101, and a second via is defined in the second dielectric layer 102. The connection structure 4 in the first passive device module 11 is located on the side of the first dielectric layer 101 away from the first passive device 31. A portion of the connection structure 4 in the first passive device 31 is located within the first via and is electrically connected to the first passive device 31.

[0076] The passive components 3 in the second passive component module 12 include a second passive component 32. The second passive component module 12 also includes a connection structure 4 and a third dielectric layer 201. The third dielectric layer 201 is located on the side of the second passive component 32 that faces the first passive component module 11. A third via is defined in the third dielectric layer 201. At least a portion of the connection structure 4 in the second passive component module 12 is located within the third via of the third dielectric layer 201 and is electrically connected to the second passive component 32.

[0077] At least a portion of the bonding layer 2 is located in the second via hole on the second dielectric layer 102 and is bonded to the connection structure 4 in the first passive component module 11 and the connection structure 4 in the second passive component module 12 , respectively.

[0078] In the embodiment of the present disclosure, the first dielectric layer 101 and the second dielectric layer 102 in the first passive device module 11 are respectively provided with a first via hole and a second via hole, and the third dielectric layer 201 in the second passive device module 12 is provided with a third via hole, so as to realize the electrical connection between the connection structure 4 of at least one of the passive device modules 1 and the other passive device module 1. For example, in the embodiment shown in FIG5 , the connection structure 4 in the first passive device module 11 is bonded to the second passive device 32 in the second passive device module 12 by providing a bonding layer 2. In the embodiment shown in FIG6 , the connection structure 4 of the first passive device module 11 is bonded to the connection structure 4 of the second passive device module 12 by providing a bonding layer 2 between the connection structure 4 of the first passive device module 11 and the connection structure 4 of the second passive device module 12, thereby realizing the integration of the first passive device module 11 and the second passive device module 12.

[0079] In practice, the first dielectric layer 101, the second dielectric layer 102, the third dielectric layer 201, and the connection structure 4 are respectively formed on the surfaces of two adjacent passive device modules 1, serving to connect the two adjacent passive device modules 1 to the bonding layer 2, and to electrically connect the bonding layer 2 to the passive devices 3 in the two passive device modules 1. The connection structure 4 can be understood as a signal decoupling structure for the passive devices 3. Therefore, those skilled in the art can prepare it according to actual needs to facilitate the preparation of the bonding layer 2 on the side of at least one of the connection structures 4 away from the passive device module 1, thereby achieving bonding between the bonding layer 2 and the passive devices 3 or the connection structure 4 in the passive device module 1.

[0080] Optionally, as shown in FIG. 5 and FIG. 6 , the first passive component module 11 further includes a third substrate 100 located on a side of the first passive component 31 away from the second passive component module 12 .

[0081] Optionally, as shown in FIG. 6 , the second passive component module 12 further includes a fourth substrate 200 located on a side of the second passive component 32 away from the first passive component module 11 .

[0082] Optionally, the materials of the third substrate 100 and the fourth substrate 200 may include, but are not limited to, silicon, glass, quartz, ceramics, organic materials, and the like.

[0083] In some embodiments, as shown in FIG7 and FIG8 , the first passive component module 11 further includes a third passive component 5. The third passive component 5 is disposed in the same layer as at least a portion of the first passive component 31.

[0084] The third passive component 5 and at least a portion of the first passive component 31 are arranged in the same layer, so that the third passive component 5 and at least a portion of the first passive component 31 can be manufactured at the same time, simplifying the manufacturing process.

[0085] In some embodiments, as shown in Figures 7 and 8, the first passive component 31 is a capacitor, and the third passive component 5 is a resistor. The capacitor includes a second plate 312 and a first plate 311, which are sequentially arranged in a direction away from the first dielectric layer 101. The resistor is arranged in the same layer as the second plate 312. A fourth via is also provided in the first dielectric layer 101. The first passive component module 11 also includes a second transmission portion 51, which is arranged in the same layer as the first conductive portion 42. A portion of the second transmission portion 51 is located within the fourth via and is electrically connected to the resistor.

[0086] Optionally, the material of the second electrode plate 312 and the first electrode plate 311 includes at least one of metals such as Ti / Cu / Ti, Ti / Al / Ti, TaN / Ta, and Ti / W.

[0087] Optionally, a conductive layer 501 is further provided between the resistor and the second transmission portion 51. The conductive layer 501 can be understood as a structure that facilitates electrical connection between the resistor and other structures.

[0088] Optionally, the material of the resistor includes TaN.

[0089] Optionally, the material of the conductive layer 501 includes at least one of Au, Au, Ni / Au and Pd / Au.

[0090] Optionally, a transition layer (not shown in the figure) is provided between the conductive layer 501 and the resistor. Optionally, the material of the transition layer includes at least one of TiW and Cr.

[0091] Optionally, as shown in FIG. 7 and FIG. 8 , a dielectric layer 301 is further provided between the second electrode plate 312 and the first electrode plate 311 .

[0092] In some embodiments, as shown in FIG9 , the second passive component 32 is a three-dimensional inductor. The three-dimensional inductor includes: a first substrate 321, a plurality of first transmission lines 322, and a plurality of first connecting pillars 323. The first substrate 321 is provided with a plurality of sixth vias, the plurality of first transmission lines 322 are arranged on opposite sides of the first substrate 321, and the first connecting pillars 323 are located in the sixth vias. The two ends of the first connecting pillars 323 are electrically connected to the first transmission lines 322 on both sides of the first substrate 321, respectively, to form a first coil structure. As shown in FIG10 , it is a schematic structural diagram of a three-dimensional inductor. The three-dimensional inductor shown in FIG9 (corresponding to the second passive component 32 in FIG9 ) only symbolically shows part of the three-dimensional inductor. Those skilled in the art can set the parameters of the three-dimensional inductor, such as the number of coil turns, size, and position, according to actual needs.

[0093] Optionally, the material of the first substrate 321 may include but is not limited to silicon, glass, quartz, ceramics, organic materials, and the like.

[0094] Alternatively, the capacitor can be fabricated on a glass substrate (of any thickness). Depending on device performance requirements, the metal thickness can be thinner than 1 μm or thicker than 1 μm. The metal in contact with the glass substrate surface and dielectric layer 301 must prevent outward diffusion of the electrode metal. Typically, Ti, TaN, or other materials are used as barrier layers.

[0095] Optionally, the dielectric layer 301 may be made of insulating materials such as SiNx and SiO2. To ensure coverage, the thickness is generally ≥100 nm.

[0096] Optionally, the thickness of the first substrate 321 may be in a range of 30 μm to 1 mm. The diameter of the sixth via hole may be greater than or equal to 5 μm.

[0097] Optionally, the first transmission line 322 and the first connecting pillar 323 are made of metal or conductive polymer. Further, optionally, the first transmission line 322 is made of copper. The first connecting pillar 323 is made of copper or tungsten.

[0098] In other embodiments, as shown in Figures 11, 14 and 16, the passive components 3 in the second passive component module 12 further include a fourth passive component 7. The fourth passive component 7 is disposed on the same layer as part of the second passive components 32.

[0099] Optionally, the second passive component 21 may be a three-dimensional inductor or a planar inductor.

[0100] For example, in some embodiments, as shown in FIG11 , the second passive component module 12 further includes: a fourth dielectric layer 202, a third transmission portion 6, and a fourth passive component 7. The fourth dielectric layer 202 is disposed on a side of the three-dimensional inductor (i.e., the second passive component 32 in the figure) away from the first passive component module 11. A fifth via is defined in the fourth dielectric layer 202. The third transmission portion 6 is located on a side of the fourth dielectric layer 202 away from the first passive component module 11. A portion of the third transmission portion 6 is located within the fifth via and is electrically connected to the first transmission line 322. The fourth passive component 7 is disposed on the same layer as the third transmission portion 6.

[0101] Optionally, the fourth passive component 7 is a resistor. A conductive layer 501 is further provided on a side of the resistor away from the fourth dielectric layer 202 .

[0102] In some embodiments, as shown in FIG12 , the second passive component 32 includes a planar inductor. The planar inductor includes: a plurality of second transmission lines 324, a plurality of spacer layers 325, and a plurality of second connecting posts 326. The plurality of second transmission lines 324 are arranged sequentially in a direction away from the first passive component module 11. The spacer layers 325 are arranged between each two adjacent second transmission lines 324. Each spacer layer 325 is provided with a seventh via, and the second connecting posts 326 are located within the seventh via. A second connecting post 326 is connected between each two second transmission lines 324, forming a second coil structure. FIG13 is a schematic diagram of the structure of the planar inductor. The planar inductor shown in FIG2 (corresponding to the second passive component 32 in FIG12 ) only symbolically illustrates a portion of the planar inductor. Those skilled in the art can adjust the parameters of the planar inductor, such as the number of coil turns, size, and position, according to actual needs.

[0103] In some other embodiments, as shown in FIG14 , the second passive component module 12 further includes a fourth passive component 7 . The fourth passive component 7 is disposed on the same layer as one of the second transmission lines 324 .

[0104] Optionally, the fourth passive component 7 may be a resistor.

[0105] Optionally, as shown in FIG14 , the second passive component module 12 further includes an eighth transmission portion 71 . The eighth transmission portion 71 is provided in the same layer as one of the second transmission lines 324 and is electrically connected to the fourth passive component 7 .

[0106] Optionally, a conductive layer 501 is electrically connected between the eighth transmission portion 71 and the fourth passive component 7 .

[0107] Optionally, the eighth transmission portion 71 may be bonded to the bonding layer 2 or electrically connected to the bonding layer 2 via the connection structure 4, thereby being electrically connected to an adjacent passive component module, or being electrically connected to the second passive component 32 of the second passive component module 12 by setting a line, thereby further achieving electrical connection between the fourth passive component and the first passive component or the second passive component.

[0108] In other embodiments, as shown in Figures 15 and 16, the second passive component module 12 further includes: a second substrate 81 disposed between the second passive component 32 and the third dielectric layer 201, and a transmission structure 8 penetrating the second substrate 81. The transmission structure 8 has two ends connected to the bonding layer 2 and the second passive component 32, respectively.

[0109] For example, as shown in Figures 15 and 16 , an eighth via hole is formed in the second substrate 81. At least a portion of the transmission structure 8 is located in the eighth via hole.

[0110] Optionally, as shown in Figures 15 and 16, the transmission structure 8 includes: a fourth transmission part 82, a fifth transmission part 83, and a sixth transmission part 84, and the second passive device module 12 further includes: a fifth dielectric layer 85. The fourth transmission part 82 is located between the second substrate 81 and the third dielectric layer 201 and is electrically connected to the bonding layer 2. The sixth transmission part 84 is located in the eighth via. The fifth transmission part 83 is located on the side of the second substrate 81 away from the third dielectric layer 201, and the two ends of the sixth transmission part 84 are electrically connected to the fifth transmission part 83 and the fourth transmission part 82, respectively. The fifth dielectric layer 85 is located between the fifth transmission part 83 and the planar inductor and is provided with a ninth via. Part of the planar inductor is located in the ninth via and is electrically connected to the fifth transmission part 83.

[0111] The function of the transmission structure 8 is to meet the requirement that the planar inductance signal in some filters is to lead out the signal from the back surface. When designing a corresponding filter, the second passive component in this embodiment can be selected for preparation.

[0112] Optionally, the material of the second substrate 81 may include but is not limited to silicon, glass, quartz, ceramics, organic materials, etc.

[0113] In other embodiments, as shown in FIG16 , the second passive component module 12 further includes a fourth passive component 7. The fourth passive component 7 is disposed on the same layer as a portion of the transmission structure 8. For example, in the embodiment shown in FIG16 , the fourth passive component 7 is disposed on the same layer as the fifth transmission portion 83.

[0114] Optionally, as shown in FIG16 , the second passive component module 12 further includes an eighth transmission portion 71 . The eighth transmission portion 71 is provided in the same layer as one of the second transmission lines 324 and is electrically connected to the fourth passive component 7 .

[0115] In some embodiments, as shown in Figures 1 to 9, 11 to 12, and 14 to 16, the integrated passive device further includes a plurality of second conductive portions 9, each of which is electrically connected to one of the passive device modules 1 (e.g., the first passive device module 11 or the second passive device module 12). At least one of the second conductive portions 9 is configured to connect to an external device, thereby electrically connecting the entire integrated passive device to the external device.

[0116] Optionally, as shown in FIG6 and FIG8, part of the second conductive portion 9 passes through the first dielectric layer 101 and the second dielectric layer 102 and is arranged on the same layer as part of the first passive device module 11, and electrical connection with the first passive device module 11 can be achieved by designing routing.

[0117] Optionally, as shown in Figures 5, 7, 9, 11 to 12, and 14 to 16, the integrated passive component further includes a sixth dielectric layer 601 located on a side of the second passive component module 12 away from the first passive component module 11, the sixth dielectric layer 601 having a tenth via hole, and a portion of the second conductive portion 9 is located in the tenth via hole and is electrically connected to the second passive component module 12.

[0118] In some embodiments, as shown in FIG17 , the plurality of passive device modules include: a first passive device module 11 and a second passive device module 12. The plurality of second conductive portions 9 are electrically connected to the second passive device module 12, and the plurality of second conductive portions 9 and the second passive device module 12 are located on the same side of the first passive device module 11. A first distance L1 exists between the end of the second conductive portion 9 away from the first passive device module 11 and the first passive device module 11, and a second distance L2 exists between the end of the second passive device module 12 away from the first passive device module 11 and the first passive device module 11. The first distance L1 is greater than the second distance L2. It can be understood that when the height of the second conductive portion 9 is higher than the height of the second passive device module 12, this is to facilitate electrical connection between the second conductive portion 9 and external devices.

[0119] 17 , the second conductive portion 9 may include a first sub-conductive portion 91 and a second sub-conductive portion 92 . The first sub-conductive portion 91 is located between the second sub-conductive portion 92 and the first passive device module 11 .

[0120] Optionally, the first sub-conductive portion 91 and the second sub-conductive portion 92 are made of metal. Further, optionally, the first sub-conductive portion 91 is made of copper, and the second sub-conductive portion 92 is made of at least one of tin, nickel, tin, and silver.

[0121] Optionally, the material of the second sub-conductive portion 92 includes tin, nickel, or tin and silver. For example, the second sub-conductive portion 92 is formed by a three-step electroplating process: first copper plating, then nickel plating, and finally tin-silver plating. When the second sub-conductive portion 92 includes multiple materials, the thickness of each material layer can vary, but the ratios will not vary significantly. For example, the materials and thicknesses disposed away from the first sub-conductive portion may be: copper 35 μm, nickel 3 μm, and tin-silver 30 μm.

[0122] In other embodiments, as shown in Figure 17, the second passive component module 12 further includes: multiple seventh transmission parts 10, each second conductive part 9 is electrically connected to at least one seventh transmission part 10, and at least one seventh transmission part 10 is arranged on the same layer as part of the passive components in the first passive component module 11.

[0123] Optionally, the materials of the first dielectric layer 101 , the second dielectric layer 102 , the third dielectric layer 201 , the fourth dielectric layer 202 , the fifth dielectric layer 85 and the sixth dielectric layer 601 include but are not limited to PI materials.

[0124] In a second aspect, embodiments of the present disclosure provide a method for preparing an integrated passive device. FIG18 is a flow chart of a method for preparing an integrated passive device in some embodiments of the present disclosure. FIG19 is a schematic diagram of a process for preparing an integrated passive device in some embodiments of the present disclosure. FIG20 is a structural diagram of an integrated circuit in other embodiments of the present disclosure. FIG21 is a schematic diagram of a process for preparing an integrated passive device in other embodiments of the present disclosure. In some embodiments, as shown in FIG18, the method for preparing an integrated passive device includes:

[0125] S1. Form a plurality of passive device modules 1 , each of which includes at least one passive device 3 . At least one of two adjacent passive device modules further includes a connection structure electrically connected to the passive device 3 .

[0126] S2. Stack multiple passive device modules 1, set a bonding layer 2 between two adjacent passive device modules 1, and bond the passive devices 3 or connection structures 4 in the two adjacent passive device modules 1 to achieve electrical connection between the adjacent passive device modules 1.

[0127] Optionally, if one of the passive device modules 1 includes at least one passive device 3 and the other passive device module 1 includes at least one passive device 3 and at least one connection structure 4 , a bonding layer 2 is prepared on a side of the connection structure 4 away from the passive device 3 .

[0128] Optionally, if both passive component modules 1 include at least one passive component 3 and at least one connecting structure 4 , a bonding layer 2 is prepared on a side of the connecting structure 4 of one of the passive component modules 1 away from the passive component 3 of the passive component module 1 .

[0129] Optionally, preparing the bonding layer 2 includes: soldering tin and / or silver to a side of the connection structure 4 away from the passive device 3 in the passive device module 1 .

[0130] Optionally, a bonding layer 2 is provided between two adjacent passive device modules 1 to bond the passive devices 3 or the connection structures 4 in the two adjacent passive device modules 1, including:

[0131] The bonding layer 2 is heated to melt, and the bonding layer 2 in the molten state can be solidified to achieve bonding.

[0132] The stacked integrated passive components are thinned to a desired thickness. Generally, the thickness of the final integrated passive components is greater than or equal to 30 μm.

[0133] The preparation method of the integrated passive device provided by the embodiment of the present disclosure, wherein the passive device module 1 can be prepared in advance, and the process is simple when bonding multiple passive device modules 1 using the bonding layer 2, which reduces the difficulty and steps of the manufacturing process, can shorten the manufacturing cycle, improve the overall yield of the integrated passive device, and enrich the product types of the integrated passive device. The preparation method of the integrated passive device provided by the embodiment of the present disclosure splits the integrated passive device with a long manufacturing cycle into multiple single passive device modules with a shorter manufacturing cycle, and then bonds the multiple passive device modules, thereby reducing the manufacturing cycle of the integrated passive device, and can improve the yield of the final integrated passive device by controlling the manufacturing yield of each passive device module and the yield of the bonding between the passive device modules.

[0134] In some embodiments, as shown in FIG19 , a method for preparing an integrated passive device includes:

[0135] A first passive component module 11 and a second passive component module 12 are formed, respectively. The first passive component module 11 includes passive components 3, and the second passive component module 12 includes passive components 3 and a connecting structure 4. A bonding layer 2 is formed on the side of the connecting structure 4 facing away from the passive components 3 in the second passive component module 12. The bonding layer 2 is provided between the first passive component module 11 and the second passive component module 12 to bond them together, resulting in the integrated passive device shown in Figure 1. Its functionality is equivalent to that of the integrated circuit shown in Figure 20.

[0136] In some embodiments, as shown in FIG21 , a method for preparing an integrated passive device includes:

[0137] A first passive component module 11 and a second passive component module 12 are formed, respectively. The first passive component module 11 includes a first passive component 31, a third passive component 5, and two connecting structures 4, while the second passive component module 12 includes a second passive component 32 and two connecting structures 4. In this embodiment, a bonding layer 2 is formed on the side of the two connecting structures 4 in the second passive component module 12 away from the second passive component 32. The bonding layer 2 is provided between the first passive component module 11 and the second passive component module 12 to bond the first and second passive component modules 11 and 12, resulting in an integrated passive device as shown in Figure 8. Its function is equivalent to the integrated circuit shown in Figure 22.

[0138] Accordingly, for integrated circuits with certain functions, they can be designed based on their functions to have a structure consisting of multiple stacked passive device modules. For example, the integrated circuit shown in FIG23 can achieve the same functions as the integrated passive devices shown in FIG7 or FIG11. The integrated circuit shown in FIG24 can achieve the same functions as the integrated passive devices shown in FIG12 or FIG15. The integrated circuit shown in FIG25 can achieve the same functions as the integrated passive devices shown in FIG11, FIG13, or FIG16. The integrated circuit shown in FIG22 can achieve the same functions as the integrated passive devices shown in FIG8 or FIG26.

[0139] The embodiment of the present disclosure can realize integrated passive devices with different functions by designing a passive device module 1 including passive devices of different numbers and / or types, and by providing a bonding layer 2 between adjacent passive device modules 1 to stack and electrically connect the passive device modules 1.

[0140] In a third aspect, an embodiment of the present disclosure provides a filter, comprising the integrated passive device provided by any embodiment of the present disclosure.

[0141] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present disclosure, and such modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. An integrated passive device, wherein: The integrated passive device comprises: A plurality of stacked passive device modules; each passive device module includes at least one passive device, and at least one of two adjacent passive device modules further includes a connection structure electrically connected to the passive device; Conductive bonding layer; in two adjacent passive device modules, the bonding layer is connected between the connection structure of one passive device module and the other passive device module.

2. The integrated passive device according to claim 1, wherein: The plurality of passive component modules include: a first passive component module and a second passive component module; The passive device in the first passive device module includes a first passive device; the first passive device module further includes: the connection structure, a first dielectric layer and a second dielectric layer, the second dielectric layer being located on a side of the first dielectric layer away from the first passive device; a first via hole is formed on the first dielectric layer; and a second via hole is formed on the second dielectric layer. The passive device in the second passive device module includes a second passive device; the second passive device module further includes a third dielectric layer located on a side of the second passive device facing the first passive device module, and a third via is opened on the third dielectric layer; The connection structure in the first passive component module includes: a first transmission portion and a first conductive portion that are electrically connected, wherein a portion of the first transmission portion is located in the first via hole and is electrically connected to the first passive component; and at least a portion of the first conductive portion is located in the second via hole. Wherein, at least part of the bonding layer is located in the third via hole and is electrically connected to the first conductive portion and the second passive component; or, the second passive component module further includes: a connecting structure; at least part of the connecting structure in the second passive component module is located in the third via hole and is electrically connected to the second passive component; at least part of the bonding layer is located in the second via hole and is respectively connected to the connecting structure and The connection structure in the second passive device module is bonded.

3. The integrated passive device according to claim 2, wherein: The passive components in the first passive component module further include a third passive component, and the third passive component is disposed in the same layer as at least a portion of the first passive component.

4. The integrated passive device according to claim 3, wherein: The first passive component is a capacitor, and includes a second plate and a first plate sequentially arranged in a direction away from the first dielectric layer; the third passive component is a resistor, and the resistor is arranged in the same layer as the second plate; A fourth via is also provided on the first dielectric layer; the first passive component module further includes a second transmission part, which is provided on the same layer as the first transmission part, and a portion of the second transmission part is located in the fourth via and is electrically connected to the resistor.

5. The integrated passive device according to any one of claims 2 to 4, wherein: The second passive component is a three-dimensional inductor or a planar inductor.

6. The integrated passive device according to any one of claims 2 to 5, wherein: The second passive component module further includes: a substrate, disposed between the second passive component and the third dielectric layer; A transmission structure passes through the substrate, and two ends of the transmission structure are respectively connected to the bonding layer and the second passive component.

7. The integrated passive device according to claim 6, wherein: The passive components in the second passive component module further include a fourth passive component; the fourth passive component is arranged on the same layer as part of the transmission structure.

8. The integrated passive device according to any one of claims 2 to 6, wherein: The passive components in the second passive component module further include a fourth passive component; the fourth passive component is arranged on the same layer as part of the second passive components.

9. The integrated passive device according to any one of claims 1 to 8, wherein: The integrated passive component further includes: a plurality of second conductive parts, wherein the plurality of second conductive parts are electrically connected to one of the passive component modules.

10. The integrated passive device according to claim 9, wherein: The multiple passive component modules include: an adjacent first passive component module and a second passive component module; the second passive component module also includes: a plurality of seventh transmission parts, the second conductive parts are electrically connected to the seventh transmission parts, and at least one of the seventh transmission parts is arranged on the same layer as the passive components in the second passive component module.

11. A method for preparing an integrated passive device, wherein: include: forming a plurality of passive device modules respectively, each of which includes at least one passive device, and at least one of two adjacent passive device modules further includes a connection structure electrically connected to the passive device; The plurality of passive device modules are stacked and arranged, and in every two adjacent passive device modules, a bonding layer is connected between the connection structure in one passive device module and the other passive device module.

12. A filter, wherein Comprising the integrated passive device according to any one of claims 1 to 10.

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