Quantum dot nanolayers with removal efficiency matching, their in-situ growth methods and applications

Abstract

A quantum dot nanolayer with matched removal efficiency, its in-situ growth method, and its application are disclosed, relating to the field of semiconductor wafer polishing technology. This invention solves the problems of low removal efficiency, high damage, and high cost associated with existing traditional polishing processes. Polymethyl methacrylate, polyvinyl alcohol, and hydrogenated styrene-butadiene block copolymer powders are added to dimethylformamide and stirred to obtain a polymer / DMF solution. A nanocrystal precursor solution is added to the polymer / DMF solution and mixed, heated, and stirred overnight. The mixture is then spin-coated onto a semiconductor wafer to obtain a wet film, which is annealed to complete the in-situ growth of a quantum dot nanolayer with matched removal efficiency. This invention achieves a high degree of matching between the quantum dot composition and structural parameters and the removal efficiency of the target semiconductor wafer, effectively reducing surface roughness and processing costs, and can be applied to the polishing process of semiconductor materials.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wafer polishing technology, specifically to a quantum dot nanolayer with matching removal efficiency, its in-situ growth method, and its application. Background Technology

[0002] In recent years, wide-bandgap semiconductor materials, represented by silicon carbide (SiC), gallium oxide (Ga2O3), diamond, and aluminum oxide (Al2O3), have gradually become ideal substrate materials for next-generation power electronic devices and high-frequency, high-speed devices due to their high breakdown electric field strength (SiC is about ten times that of silicon), high thermal conductivity, high hardness, and excellent wear resistance and chemical stability. In practical applications, device performance is highly dependent on the surface quality of the substrate material. If the substrate material has excessively high surface roughness or defects (microcracks, scratches, and damaged layers), it will not only reduce carrier mobility but may also become electric field concentration points, leading to premature device failure. Therefore, high-precision polishing technology is widely used in the processing of wide-bandgap semiconductors. By eliminating surface defects and improving flatness and smoothness, it ensures stable device performance, reduces subsequent processing costs, and provides quality consistency and reliability guarantees for large-scale industrialization.

[0003] However, in the actual manufacturing and processing of semiconductor materials, due to their high hardness and strong chemical inertness, traditional polishing processes relying solely on mechanical abrasion present challenges such as high polishing difficulty, poor removal efficiency, and long processing cycles, making it difficult to meet the demands of high-efficiency production. Furthermore, mechanical abrasion easily introduces microcracks, scratches, and residual stress layers into the surface, forming a processing damage layer that degrades the electrical and optical performance of devices and increases processing costs. Therefore, these problems have become significant bottlenecks restricting the large-scale industrial application of wide-bandgap semiconductor materials, necessitating the development of precision polishing technologies that combine high removal rates, low damage, and low cost. Summary of the Invention

[0004] To address the problems of low removal efficiency, high damage, and high cost associated with traditional polishing processes, this invention proposes a quantum dot nanolayer with matched removal efficiency, its in-situ growth method, and its application. The technical solution of this invention is as follows:

[0005] An in-situ growth method for removing efficiency-matched quantum dot nanolayers includes the following steps:

[0006] The polymer matrix was added to dimethylformamide (DMF) and stirred to obtain a polymer / DMF solution; the nanocrystal precursor solution was added to the polymer / DMF solution and mixed, heated and stirred overnight; the mixed solution was spin-coated onto a semiconductor wafer to obtain a wet film, annealed, and the in-situ growth of a quantum dot nanolayer with matching removal efficiency was completed.

[0007] Furthermore, the polymer matrix is ​​any one of polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), or hydrogenated styrene-butadiene block copolymer (SEBS) powder.

[0008] Furthermore, the volume ratio of the precursor solution to the polymer / DMF solution is 1~2:5~6.

[0009] Furthermore, the semiconductor wafer is any one of silicon carbide, diamond, gallium oxide, and aluminum oxide.

[0010] Furthermore, the nanocrystal precursor solution is FAPbI3DMF solution, CsPbI3DMF solution, or C4H 12 Any one of the following: NMnCl3DMF solution, (BTP)2MnBr4DMF solution, (PEA)2PbBr4:MnDMF solution, CsPbBr3DMF solution, and Cs3Cu2I5DMF solution.

[0011] Furthermore, the stirring temperature is 100~120℃; the PMMA, PVA, and SEBS powders are added to DMF and stirred for 1~3 hours.

[0012] Furthermore, the spin coating speed is 1000~3000 rpm; the spin coating time is 20~40 s.

[0013] Furthermore, the annealing temperature is 100~150℃.

[0014] A quantum dot nanolayer with removal efficiency matching is obtained by in-situ growth using the above-mentioned in-situ growth method.

[0015] An application of the aforementioned quantum dot nanolayer with matching removal efficiency is applied to the polishing of semiconductor materials.

[0016] Compared with existing technologies, this invention solves the problems of low removal efficiency, high damage, and high cost in traditional polishing processes. Specifically, the beneficial effects are as follows:

[0017] 1. Removal Efficiency Matching Mechanism: This invention, by controlling the composition and structural parameters of quantum dots, grows nanolayers of different quantum dots in situ on the surface of semiconductor wafers. These nanolayers, used as sacrificial layers, effectively disperse mechanical stress and reduce direct force on the wafer surface during the polishing and removal process of semiconductor wafer materials. This significantly reduces the polishing difficulty of high-hardness semiconductor materials and improves removal efficiency. It achieves a high degree of matching with the target semiconductor wafer in terms of removal efficiency, effectively improving the stability and processing quality of the polishing process, and can meet the fine processing needs of different types of high-hardness semiconductor materials.

[0018] 2. Effective Reduction of Surface Roughness: This invention effectively reduces the surface roughness of semiconductor wafers by growing quantum dot nanolayers in situ on the wafer surface and then performing a polishing process. Because the quantum dot nanolayers can uniformly cover and fill micro-defects and uneven areas on the wafer surface at a microscale, they act as a buffer layer, significantly improving the uniformity and controllability of material removal during subsequent polishing. This avoids the localized stress concentration and irregular wear phenomena that easily occur in traditional mechanical polishing. This invention not only significantly improves the overall flatness and smoothness of the wafer surface but also effectively reduces surface damage and defect generation caused by excessive grinding, enhancing the integrity and reliability of the wafer surface and providing superior surface quality assurance for subsequent device fabrication.

[0019] 3. Reduced Processing Costs: This invention achieves effective control of surface energy states during semiconductor wafer processing by constructing a quantum dot nanolayer in situ on the semiconductor wafer surface. This significantly alleviates localized stress concentration, enabling subsequent polishing processes to achieve high-quality surface processing with lower energy consumption and less abrasive. It effectively avoids the problems of traditional polishing processes relying on high-energy-consuming equipment and complex procedures, simplifies the processing flow, improves process stability and controllability, and significantly reduces overall energy and raw material consumption, demonstrating outstanding economic advantages. Processing costs can be reduced by more than 70%, fully demonstrating the application potential and industrialization value of this invention in the field of high-precision semiconductor wafer processing. Attached Figure Description

[0020] Figure 1 Images and fluorescence spectra of FAPbI3@PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0021] Figure 2 Images and fluorescence spectra of CsPbI3@PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0022] Figure 3 C4H 12 Images and fluorescence spectra of NMnCl3@PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0023] Figure 4 Images and fluorescence spectra of (BTP)2MnBr4@PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0024] Figure 5 Images and fluorescence spectra of (PEA)2PbBr4:Mn @PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0025] Figure 6 Images and fluorescence spectra of CsPbBr3@PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0026] Figure 7 Images and fluorescence spectra of Cs3Cu2I5@PMMA / PVA / SEBS quantum dot nanolayers under white light and ultraviolet light;

[0027] Figure 8 Figure showing the removal efficiency of different quantum dot nanolayers;

[0028] Figure 9 The image shows the surface morphology of silicon carbide after polishing.

[0029] Figure 10 This is a graph showing the variation of diamond surface roughness with processing time. Detailed Implementation

[0030] To make the technical solutions of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It should be noted that the following embodiments are only used to better understand the technical solutions of the present invention and should not be construed as limiting the present invention.

[0031] Example 1.

[0032] S1: In a nitrogen atmosphere, add 1 g of PMMA powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a PMMA / DMF solution.

[0033] S2: 103.2 mg of FAI and 276.6 mg of PbI2 powder were placed in 40 mL glass bottles, and 5 mL of DMF was added to each bottle. The two solutions were heated on a hot plate at 120 °C and 2000 rpm overnight. Then, they were filtered through a 0.22 μm syringe filter to obtain FAI / DMF solution and PbI2 / DMF solution, respectively.

[0034] S3: Add 1 mL of FAI / DMF solution and PbI2 / DMF solution to 5 mL of PMMA / DMF solution respectively, and stir overnight at 100℃ to obtain FAPbI3 precursor solution. Drop the precursor solution onto a cleaned diamond wafer, and spin coat it at 2500 rpm for 20 s using a spin coater to obtain a wet film. Anneal the wet film at 120℃ for 5 min to promote the in-situ crystallization of CsPbI3 nanocrystals in PMMA polymer to obtain FAPbI3@PMMA quantum dot nanolayer.

[0035] like Figure 1 The images (a) and (b) of the FAPbI3@PMMA quantum dot nanolayer under white light and ultraviolet light are shown. As can be seen from the figures, the FAPbI3@PMMA quantum dot nanolayer emits bright red fluorescence under ultraviolet light excitation, which indicates that the quantum dot nanolayer has good photoluminescence properties and can produce obvious fluorescence response under ultraviolet light excitation. At the same time, the fluorescence spectrum shows a clear single peak, indicating that the FAPbI3@PMMA quantum dot nanolayer has good luminescence monochromaticity.

[0036] Example 2.

[0037] S1: In a nitrogen atmosphere, add 1 g of PMMA powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a PMMA / DMF solution.

[0038] S2: Place 103.9 mg of CsI and 184.4 mg of PbI2 powder into 40 mL glass bottles, add 5 mL of DMF to each, and heat and stir the two solutions on a hot plate at 120 °C and 2000 rpm overnight. Then filter the solutions using a 0.22 μm syringe filter to obtain CsI / DMF solution and PbI2 / DMF solution, respectively.

[0039] S3: Add 1 mL of CsI / DMF solution and PbI2 / DMF solution to 5 mL of PMMA / DMF solution, and stir overnight at 110 °C. Drop the mixed solution onto the cleaned diamond wafer and spin coat it at 2500 rpm for 20 s using a spin coater to obtain a wet film. Anneal the wet film at 110 °C for 5 min to promote in-situ crystallization of CsPbI3 nanocrystals in the PMM polymer, and obtain a CsPbI3@PMMA quantum dot nanolayer.

[0040] like Figure 2The images (a) and (b) of the CsPbI3@PMMA quantum dot nanolayer under white light and ultraviolet light are shown. As can be seen from the figures, the CsPbI3@PMMA quantum dot nanolayer emits bright red fluorescence under ultraviolet light excitation, which indicates that the quantum dot nanolayer has good photoluminescence properties and can produce obvious fluorescence response under ultraviolet light excitation. At the same time, the fluorescence spectrum shows a clear single peak, indicating that the CsPbI3@PMMA quantum dot nanolayer has good luminescence monochromaticity.

[0041] Example 3.

[0042] S1: In a nitrogen atmosphere, add 1 g of PVA powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a PVA / DMF solution.

[0043] S2: 109.6 mg of (CH3)4NCl and 197.9 mg of MnCl2•4H2O powder were placed in 40 mL glass bottles, and 5 mL of DMF was added to each bottle. The two solutions were heated and stirred on a hot plate at 120 °C and 2000 rpm overnight. Then, they were filtered through a 0.22 μm syringe filter to obtain (CH3)4NCl / DMF solution and MnCl2 / DMF solution, respectively.

[0044] S3: Add 1 mL of (CH3)4NCl / DMF solution and MnCl2 / DMF solution to 5 mL of PVA / DMF solution, and stir overnight at 90℃. Drop the mixture onto a cleaned diamond wafer and spin-coat at 2500 rpm for 20 s to obtain a wet film. Anneal the wet film at 90℃ for 5 min to promote in-situ crystallization of CsPbI3 nanocrystals in the PVA polymer, obtaining C4H… 12 NMnCl3@ PVA quantum dot nanolayers.

[0045] like Figure 3 The image shows C4H 12 Images (a) and fluorescence spectra (b) of NMnCl3@PVA quantum dot nanolayers under white light and ultraviolet light. The images show that under ultraviolet light excitation, C4H… 12 The NMnCl3@PVA quantum dot nanolayers emit bright green fluorescence, indicating that they possess photoluminescence properties and can generate a fluorescence response under ultraviolet light excitation. Furthermore, the fluorescence spectrum exhibits a distinct single peak, suggesting that C4H... 12 The NMnCl3@PVA quantum dot nanolayer exhibits excellent monochromatic light emission.

[0046] Example 4.

[0047] S1: In a nitrogen atmosphere, add 1 g of SEBS powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a SEBS / DMF solution.

[0048] S2: Place 601.5 mg of BTPBr and 214.7 mg of MnBr2 powder into 40 mL glass bottles, add 5 mL of DMF to each, and heat and stir the two solutions on a hot plate at 120 °C and 2000 rpm overnight. Then filter the solutions using a 0.22 μm syringe filter to obtain BTPBr / DMF solution and MnBr2 / DMF solution, respectively.

[0049] S3: Add 1 mL of BTPBr / DMF solution and MnBr2 / DMF solution to 5 mL of SEBS / DMF solution, and stir overnight at 80°C. Drop the mixed solution onto the cleaned diamond wafer and spin coat it at 2500 rpm for 20 s using a spin coater to obtain a wet film. Anneal the wet film at 70°C for 5 min to promote the in-situ crystallization of (BTP)2MnBr4 nanocrystals in the SEBS polymer to obtain a (BTP)2MnBr4@SEBS quantum dot nanolayer.

[0050] like Figure 4 The images (a) and (b) of the (BTP)2MnBr4@SEBS quantum dot nanolayer under white light and ultraviolet light are shown. As can be seen from the figures, the (BTP)2MnBr4@SEBS quantum dot nanolayer emits bright green fluorescence under ultraviolet light excitation, which indicates that the quantum dot nanolayer has good photoluminescence properties and can produce obvious fluorescence response under ultraviolet light excitation. At the same time, the fluorescence spectrum shows a clear single peak, indicating that the (BTP)2MnBr4@SEBS quantum dot nanolayer has good luminescence monochromaticity.

[0051] Example 5.

[0052] S1: In a nitrogen atmosphere, add 1 g of PMMA powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a PMMA / DMF solution.

[0053] S2: Add 404.2 mg PEABr and 367.0 mg PbBr2 to 5 mL DMF and stir at 60°C for 5 hours until the powder is completely dissolved to obtain precursor A solution. Add 404.2 mg PEABr and 214.7 mg MnBr2 to 5 mL DMF and stir at 600°C for 5 hours until the powder is completely dissolved to obtain precursor B solution. Mix precursor A solution and precursor B solution according to V B :V A The (PEA)2PbBr4:Mn precursor solution was obtained by mixing the components in a volume ratio of 1:4.

[0054] S4: Add 1 mL of (PEA)2PbBr4:Mn precursor solution to 5 mL of PMMA / DMF solution. Heat the mixture at 120 °C and stir overnight. Drop the mixture onto a semiconductor wafer and spin coat at 2500 rpm for 20 seconds to obtain a wet film. Then, anneal the wet film at 100 °C to promote in-situ crystallization of (PEA)2PbBr4:Mn nanocrystals in PMMA / polymer to obtain a (PEA)2PbBr4:Mn@PMMA quantum dot nanolayer.

[0055] like Figure 5 The images (a) and (b) of the (PEA)2PbBr4:Mn @PMMA quantum dot nanolayer under white light and ultraviolet light are shown. As can be seen from the figures, the (PEA)2PbBr4:Mn @PMMA quantum dot nanolayer emits bright orange fluorescence under ultraviolet light excitation, which indicates that the quantum dot nanolayer has good photoluminescence properties and can produce obvious fluorescence response under ultraviolet light excitation. At the same time, the fluorescence spectrum shows a clear peak shape, indicating that the (PEA)2PbBr4:Mn @PMMA quantum dot nanolayer has good luminescence monochromaticity.

[0056] Example 6.

[0057] S1: In a nitrogen atmosphere, add 1 g of PMMA powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a PMMA / DMF solution.

[0058] S2: 1267.0 mg of PbBr2 and 514.0 mg of CsBr powder were placed in 40 mL glass bottles, and 5 mL of DMF was added to each bottle. The two solutions were then heated and stirred on a hot plate at 120 °C and 2000 rpm overnight. The mixture was then filtered through a 0.22 μm syringe filter to obtain PbBr2 / DMF solution and CsBr / DMF solution, respectively.

[0059] S3: Add 1 mL of PbBr2 / DMF solution and CsBr / DMF solution to 5 mL of PMMA / DMF solution, and stir overnight at 90°C. Drop the mixed solution onto a cleaned diamond wafer and spin coat it at 2500 rpm for 20 s using a spin coater to obtain a wet film. Anneal the wet film at 95°C for 5 min to promote in-situ crystallization of CsPbBr3 nanocrystals in the PMMA polymer, thus obtaining a CsPbBr3@PMMA quantum dot nanolayer.

[0060] like Figure 6 The images (a) and (b) of the CsPbBr3@PMMA quantum dot nanolayer under white light and ultraviolet light are shown. As can be seen from the figures, the CsPbBr3@PMMA quantum dot nanolayer emits bright green fluorescence under ultraviolet light excitation, which indicates that the quantum dot nanolayer has good photoluminescence properties and can produce obvious fluorescence response under ultraviolet light excitation. At the same time, the fluorescence spectrum shows a clear peak shape, indicating that the CsPbBr3@PMMA quantum dot nanolayer has good luminescence monochromaticity.

[0061] Example 7.

[0062] S1: In a nitrogen atmosphere, add 1 g of PVA powder to 5 mL of DMF and stir at 2000 rpm for 2 h at 110 °C until the powder is completely dissolved to obtain a PVA / DMF solution.

[0063] S2: 779.4 mg of CsI and 380.9 mg of CuI powder were placed in 40 mL glass bottles, and 5 mL of DMF was added to each. The two solutions were heated on a hot plate at 120 °C and 2000 rpm overnight. Then, they were filtered through a 0.22 μm syringe filter to obtain CsI / DMF solution and CuI / DMF solution, respectively.

[0064] S3: Add 1 mL of CsI / DMF solution and CuI / DMF solution to 5 mL of PVA / DMF solution, and stir overnight at 90 °C. Drop the mixed solution onto the cleaned diamond wafer and spin coat it at 2500 rpm for 20 s using a spin coater to obtain a wet film. Anneal the wet film at 60 °C for 5 min to promote the in-situ crystallization of Cs3Cu2I5 nanocrystals in the PVA polymer, and obtain a Cs3Cu2I5@PVA quantum dot nanolayer.

[0065] like Figure 7 The images (a) and (b) of the Cs3Cu2I5@ PVA quantum dot nanolayer under white light and ultraviolet light are shown. As can be seen from the images, the Cs3Cu2I5@ PVA quantum dot nanolayer emits bright blue fluorescence under ultraviolet light excitation, which indicates that the quantum dot nanolayer has good photoluminescence properties and can produce obvious fluorescence response under ultraviolet light excitation. At the same time, the fluorescence spectrum shows a clear peak shape, indicating that the Cs3Cu2I5@ PVA quantum dot nanolayer has good luminescence monochromaticity.

[0066] Example 8.

[0067] S1: In a nitrogen atmosphere, add 1 g PVA to 5 mL DMF and stir at 2000 rpm for 2 h at 110 °C until a transparent solution is formed, thus obtaining a PVA / DMF solution.

[0068] S2: 103.2 mg of FAI and 276.6 mg of PbI2 powder were placed in 40 mL glass bottles, and 5 mL of DMF was added to each. Both solutions were heated and stirred on a hot plate at 120 °C and 2000 rpm overnight. The mixture was then filtered through a 0.22 μm syringe filter to obtain FAI / DMF and PbI2 / DMF solutions, respectively. 1 mL of the FAI / DMF solution was added to the PbI2 / DMF solution. The mixture was placed on a hot plate at 120 °C and 2000 rpm for 5 h of heating and stirring. Then, 1 mL of PbI2 / DMF solution was added, and the mixture was heated and stirred at 120 °C and 2000 rpm for another 5 h to obtain the FAPbI3 / DMF solution.

[0069] S3: The FAPbI3 / DMF solution was preheated to 120 °C and then dropped onto the cleaned diamond substrate. A spin coater was used at 2500 rpm for 20 s to obtain a FAPbI3 / PVA wet film. The obtained FAPbI3 / PVA wet film substrate was then annealed on a heating plate at 120 °C for 5 min to obtain an in-situ grown and coupled FAPbI3 / PVA quantum dot nanolayer on the diamond wafer.

[0070] Removal efficiency test:

[0071] The removal efficiency of the quantum dot nanolayers prepared in Examples 1-7 was tested using pulsed ion beams. The test steps are as follows:

[0072] (1) Clean the surface of the in-situ grown quantum dot nanolayers obtained in Examples 1-7 with an air gun to ensure that there is no dust or other contaminants. Then, install the workpiece on a high-precision processing platform and ensure that its position is fixed.

[0073] (2) Set the ion beam polishing parameters: ion beam rate power 110 W, grid voltage 800 V, acceleration grid 110 V, grid current 18 mA, neutralizer current 158 ​​mA, Ar gas flow rate 40 SCCM. Set the scanning mode of the polishing process to Cartesian coordinate mode.

[0074] (3) Start the vacuum pump to ensure that the polishing process is carried out in a high vacuum environment to avoid collision between the ion beam and air molecules and reduce energy loss.

[0075] (4) Start the ion source to generate an ion beam. The ion beam used is Ar. + source.

[0076] (5) Start the polishing removal process, and set the polishing time to 60 min.

[0077] (6) After polishing is completed, restore the working environment to normal.

[0078] like Figure 8 The graph shows the removal efficiency results for different quantum dot nanolayers. It can be seen that the removal efficiency increases with the increase of the number of quantum dot atoms. Specifically, C4H... 12The removal efficiencies of NMnCl3, CsPbBr3, and FAPbI3 quantum dot nanolayers are in the range of 1–3.5 μm / h, matching those of diamond (1–3 μm / h). The removal efficiency of (PEA)2PbBr4:Mn quantum dot nanolayers is approximately 5.7 μm / h, matching that of silicon carbide (≥5 μm / h). The removal efficiency of Cs3Cu2I5 quantum dot nanolayers is around 6.2 μm / h, matching that of gallium oxide (≥6 μm / h). The removal efficiency of (BTP)2MnBr4 quantum dot nanolayers is around 7.5 μm / h, close to that of alumina (6–8 μm / h). These results indicate that by precisely controlling the composition and microstructure of quantum dot nanolayers, the removal efficiency of quantum dot-doped polymer nanolayers can be directionally optimized, achieving a high degree of matching with the removal efficiency requirements of different high-hardness semiconductor materials.

[0079] like Figure 9 The figure shows the (PEA)2PbBr4:Mn@PMMA / PVA / SEBS quantum dot nanolayer uniformly coated on the surface of a 120 mm diameter silicon carbide wafer prepared in Example 5. The entire surface was then modified and removed using an ion beam. The resulting image shows the surface morphology of the silicon carbide wafer after polishing. As can be seen from the figure, the surface shape accuracy of the silicon carbide wafer converged to 7.63 nm RMS, and the surface roughness was further reduced to 0.21 nm RMS. This demonstrates that the quantum dot nanolayer provided by this invention achieves high-precision, ultra-smooth polishing of semiconductor wafers, effectively improving removal efficiency and significantly enhancing surface processing quality.

[0080] like Figure 10 The figure shows the variation of surface roughness of diamond with in-situ grown quantum dot nanolayers prepared in Example 1 as a function of processing time. As can be seen from the figure, the surface roughness of the diamond gradually decreases with increasing processing time, from approximately 4500 nm initially to 1634 nm, indicating that the quantum dot nanolayers can significantly improve the surface modification effect. Further observation from the RMS rate of change plot shows that the rate of change tends to stabilize with increasing processing time, indicating that the diamond surface polishing process gradually enters a stable removal stage with the assistance of quantum dots. Furthermore, this method effectively reduces the cost of diamond processing, decreasing it by more than 70% from the original cost of >$500 / hour. These results demonstrate that the in-situ growth method of quantum dot nanolayers provided by this invention can not only effectively reduce the macroscopic roughness of the diamond surface but also achieve stable and controllable processing.

[0081] In summary, this invention, by controlling the composition and structural parameters of quantum dots, grows them in situ on the surface of semiconductor wafers as sacrificial layers, achieving a high degree of matching with the removal efficiency of the target semiconductor wafer. This significantly improves the stability and processing quality of the polishing process, effectively reduces surface roughness, lowers processing costs, and meets the fine processing needs of different types of high-hardness semiconductor materials. It fully demonstrates the application potential and industrialization value of this invention in the field of high-precision semiconductor wafer processing.

[0082] The above description of the embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. It should be noted that those skilled in the art can make several improvements and modifications to the present invention without departing from the principles of the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

[0083] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. Use of a quantum dot nanolayer with removal efficiency matching, characterized in that, The application relates to a polishing process field of semiconductor materials; The quantum dot nanolayer is C4H 12 NMnCl3@PVA or (BTP)2MnBr4@SEBS or (PEA)2PbBr4:Mn@PMMA or Cs3Cu2I5@PVA or FAPbI3 / PVA; the quantum dot nanolayer is efficiency matched to the semiconductor wafer removal; The quantum dot nano layer is obtained by in-situ growth through an in-situ growth method; The polymer matrix is added into dimethylformamide for stirring to obtain a polymer / dimethylformamide solution; a nanocrystal precursor solution is added into the polymer / dimethylformamide solution for mixing, heating and stirring overnight; the mixed solution is preheated and dropped onto a semiconductor wafer for spin coating to obtain a wet film, and annealing is performed to complete in-situ growth of the quantum dot nano layer with removal efficiency matching; The polymer matrix is any one of polymethyl methacrylate, polyvinyl alcohol and hydrogenated styrene-butadiene block copolymer; The semiconductor wafer is one of silicon carbide, diamond, gallium oxide and aluminum oxide; The nanocrystal precursor solution is any one of a FAPbI3dimethylformamide solution, a C4H 12 NMnCl3dimethylformamide solution, a (BTP)2MnBr4dimethylformamide solution, a (PEA)2PbBr4:Mndimethylformamide solution, a Cs3Cu2I5dimethylformamide solution.

2. The use of a removal efficiency matched quantum dot nanolayer according to claim 1, characterized in that, The volume ratio of the precursor solution to the polymer / dimethylformamide solution is 1-2:5-6.

3. The use of a removal efficiency-matched quantum dot nanolayer according to claim 1, characterized in that, The stirring temperature is 100-120 DEG C; the polymethyl methacrylate, polyvinyl alcohol and hydrogenated styrene-butadiene block copolymer powder are added into dimethylformamide for stirring for 1-3 h.

4. The use of a removal efficiency matched quantum dot nanolayer according to claim 1, characterized in that, The preheating is preheating to 120 DEG C; the spin coating speed is 1000-3000 rpm; and the spin coating time is 20-40 s.

5. The use of a removal efficiency matched quantum dot nanolayer according to claim 1, characterized in that, The annealing temperature is 100-150 DEG C.

Images