Photoelectric packaging structure and manufacturing method thereof

Abstract

The invention provides a photoelectric packaging structure and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a bottom photoelectric connection layer and a top base layer, the bottom photoelectric connection layer comprises a bottom electric connection layer and a first optical waveguide layer, the first optical waveguide layer is embedded in the bottom electric connection layer, and the top base layer comprises a top electric connection layer; the face, provided with the top electric connection layer, of the top base layer faces the bottom photoelectric connection layer; the top electric connection layer and the bottom photoelectric connection layer are connected, and the bottom electric connection layer and the top electric connection layer form a rewiring layer. According to the manufacturing method, step-by-step manufacturing of the rewiring layer is achieved, the bottom photoelectric connecting layer is not baked repeatedly, the structural stability and reliability of the photoelectric packaging structure are guaranteed, meanwhile, an optical / electric signal transmission channel is integrated in the same structural layer, and the overall integration degree of the photoelectric packaging structure is effectively increased. The overall integration level of the photoelectric packaging structure is effectively increased, and the structural stability and reliability are effectively guaranteed.

Description

Technical Field

[0001] This invention belongs to the field of integrated circuit packaging structure and manufacturing technology, and relates to an optoelectronic packaging structure and its manufacturing method. Background Technology

[0002] With the rapid development of advanced technologies such as cloud computing, big data, and artificial intelligence, the demand for information processing and transmission efficiency is constantly increasing. As feature size decreases, the physical limitations and power consumption problems faced by electronic devices are becoming increasingly prominent. Compared with the shortcomings of electrical signal transmission, using optical signals for data transmission can significantly improve transmission rate and bandwidth while maintaining low energy consumption. Therefore, optoelectronic integrated circuit technology has emerged, which combines optical chips and electrical chips to form optoelectronic integrated circuits, combining the advantages of photonics and microelectronics to realize multiple functions such as optical signal generation, transmission, modulation, detection, and electrical signal processing.

[0003] Currently, efficient integration of optoelectronic integrated circuits can be achieved by packaging optical and electrical chips together in a single package. This not only reduces electromagnetic and radio frequency interference to improve signal integrity but also reduces the number of external connections and interfaces, as well as the space occupied, making the system more compact for miniaturization and portability, meeting the needs of modern advanced communication and intelligent systems. However, packaging optical and electrical chips together presents several problems: silicon photonics process nodes are relatively less advanced than electrical chip process nodes. Taking monolithic integration as an example, while processing optical and electrical chips on a single chip minimizes impedance mismatch due to packaging, the most advanced processes developed for monolithic integration are 45nm and 32nm. Compared to electrical chip processes of 10nm and below, these processes are relatively inferior in performance, and some overall performance is sacrificed, while costs are high. Therefore, it is impossible to integrate optical and electrical chips together at a high density while simultaneously ensuring the reliability of the package structure.

[0004] Therefore, how to provide an optoelectronic packaging structure and its manufacturing method to improve the packaging density and reliability of the packaging structure while ensuring signal transmission performance has become an important technical problem that needs to be solved by those skilled in the art.

[0005] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this application. Summary of the Invention

[0006] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an optoelectronic packaging structure and its manufacturing method, so as to solve the problem that the packaging density and reliability of the optoelectronic packaging structure in the prior art need to be improved.

[0007] To achieve the above and other related objectives, the present invention provides a method for fabricating an optoelectronic packaging structure, comprising the following steps:

[0008] A bottom optoelectronic connection layer and a top base layer are provided. The bottom optoelectronic connection layer includes a bottom electrical connection layer and a first optical waveguide layer. The first optical waveguide layer is embedded in the bottom electrical connection layer. The top base layer includes a top electrical connection layer.

[0009] The side of the top base layer that has the top electrical connection layer is positioned facing the bottom optoelectronic connection layer;

[0010] The top electrical connection layer and the bottom optoelectronic connection layer are connected, wherein the bottom electrical connection layer and the top electrical connection layer constitute a redistribution layer.

[0011] Optionally, providing the bottom optoelectronic connection layer includes the following steps:

[0012] A bottom base layer is provided, the bottom base layer including a first electrical connection layer;

[0013] A first optical waveguide layer is formed on the bottom base layer, and the first optical waveguide layer covers a portion of the first electrical connection layer;

[0014] A second electrical connection layer is formed above the bottom base layer to constitute the bottom optoelectronic connection layer. The second electrical connection layer also covers the first optical waveguide layer. The first electrical connection layer and the second electrical connection layer constitute the bottom electrical connection layer.

[0015] Optionally, after connecting the top electrical connection layer and the bottom optoelectronic connection layer, the following steps are further included:

[0016] An opening is formed that penetrates a portion of the redistribution layer to expose at least a portion of the first optical waveguide layer;

[0017] A second optical waveguide layer is formed within the opening, and the second optical waveguide layer is connected to the first optical waveguide layer to form an optical waveguide structure.

[0018] Optionally, the manufacturing method further includes the step of setting an optical chip and an electrical chip above the redistribution layer to form an optoelectronic functional module with the redistribution layer. The optical chip has an optical signal output window, which is positioned facing the second optical waveguide layer. The optical signal generated by the optical chip is emitted from the optical signal output window and then transmitted through the optical waveguide structure.

[0019] Optionally, the manufacturing method further includes the following steps:

[0020] The optoelectronic functional module is disposed on the top of the packaging substrate, and the optoelectronic functional module is electrically connected to the packaging substrate.

[0021] An optical connector is disposed on the packaging substrate, and the input end of the optical connector is disposed facing the first optical waveguide layer to receive the optical signal transmitted by the first optical waveguide layer.

[0022] Optionally, the bottom base layer further includes a bottom support layer, and the process of mounting the optoelectronic functional module above the packaging substrate includes the following steps:

[0023] Remove the bottom support layer to expose the side of the first electrical connection layer that faces away from the second electrical connection layer;

[0024] Conductive bumps are formed on one exposed surface of the first electrical connection layer;

[0025] A structure with the conductive bumps is disposed above the packaging substrate and the conductive bumps are connected to the packaging substrate.

[0026] Optionally, the method of connecting the top electrical connection layer and the bottom optoelectronic connection layer includes at least one of hybrid bonding and thermo-press bonding.

[0027] Optionally, the top base layer further includes a top support layer located below the top electrical connection layer, and after connecting the top electrical connection layer and the bottom optoelectronic connection layer, the method further includes a step of removing the top support layer to transfer the top electrical connection layer onto the bottom electrical connection layer.

[0028] Optionally, the top base layer further includes a top release layer located between the top electrical connection layer and the top support layer, and the method for removing the top support layer includes laser debonding.

[0029] The present invention also provides an optoelectronic packaging structure, comprising:

[0030] The redistribution layer includes a bottom electrical connection layer and a top electrical connection layer connected to the bottom electrical connection layer;

[0031] An optical waveguide structure is embedded in the redistribution layer. The optical waveguide structure includes a first optical waveguide layer, which is located in the bottom electrical connection layer.

[0032] Optionally, the method of connecting the top electrical connection layer and the bottom optoelectronic connection layer includes at least one of hybrid bonding and thermo-press bonding.

[0033] Optionally, the optical waveguide structure further includes a second optical waveguide layer, which penetrates a portion of the redistribution layer and is connected to the first optical waveguide layer.

[0034] Optionally, the optoelectronic packaging structure further includes an optical chip and an electrical chip. The optical chip and the electrical chip are both disposed above the redistribution layer to form an optoelectronic functional module with the redistribution layer. The optical chip has an optical signal output window, which is disposed facing the second optical waveguide layer. The optical signal generated by the optical chip is emitted from the optical signal output window and then transmitted through the optical waveguide structure.

[0035] As described above, the method for fabricating the optoelectronic packaging structure of the present invention, by setting the top base layer and the bottom optoelectronic connection layer facing each other and connecting the top electrical connection layer and the bottom optoelectronic connection layer, achieves the step-by-step fabrication of the redistribution layer and avoids repeated baking of the bottom optoelectronic connection layer, thus ensuring the structural stability and reliability of the optoelectronic packaging structure. Furthermore, by fabricating the optical waveguide structure in the redistribution layer in stages, the optical signal transmission channel and the electrical signal transmission channel are integrated in the same structural layer, effectively increasing the overall integration of the optoelectronic packaging structure and achieving high-density packaging. The overall fabrication steps are simple and easy to implement, with low cost, and easy to achieve mass production. The optoelectronic packaging structure of the present invention, by setting the optical waveguide structure in the redistribution layer and integrating the optical signal transmission channel and the electrical signal transmission channel in the same structural layer, effectively increases the overall integration of the optoelectronic packaging structure to achieve high-density packaging. At the same time, the redistribution layer is fabricated in a distributed manner, effectively ensuring the structural stability and reliability of the optoelectronic packaging structure and meeting the application requirements of high reliability and high stability. Attached Figure Description

[0036] Figure 1 The diagram shows the steps of the method for fabricating the optoelectronic packaging structure of the present invention.

[0037] Figure 2 The diagram shown is a schematic of the structure obtained after providing the bottom base layer in the method for manufacturing the optoelectronic packaging structure of the present invention.

[0038] Figure 3 The diagram shown is a schematic of the structure obtained after forming the first optical waveguide layer in the method for fabricating the optoelectronic packaging structure of the present invention.

[0039] Figure 4 The diagram shown is a schematic diagram of the structure obtained after forming the second electrical connection layer in the method for manufacturing the optoelectronic packaging structure of the present invention.

[0040] Figure 5 The diagram shown is a schematic of the structure obtained after connecting the top base layer and the bottom optoelectronic connection layer in the manufacturing method of the optoelectronic packaging structure of the present invention.

[0041] Figure 6 The diagram shown is a schematic of the structure obtained after removing the top support layer in the manufacturing method of the optoelectronic packaging structure of the present invention.

[0042] Figure 7 The diagram shown is a schematic of the structure obtained after forming an opening in the manufacturing method of the optoelectronic packaging structure of the present invention.

[0043] Figure 8 The diagram shown is a schematic of the structure obtained after forming the second optical waveguide layer in the method for fabricating the optoelectronic packaging structure of the present invention.

[0044] Figure 9 The diagram shown is a schematic of the structure obtained after setting up the optical chip and the electrical chip in the manufacturing method of the optoelectronic packaging structure of the present invention.

[0045] Figure 10 The diagram shown is a schematic of the structure obtained after forming the filling layer in the method for manufacturing the optoelectronic packaging structure of the present invention.

[0046] Figure 11 The diagram shown is a schematic of the structure obtained after removing the bottom support layer in the manufacturing method of the optoelectronic packaging structure of the present invention.

[0047] Figure 12 The diagram shown is a schematic of the structure obtained after forming conductive bumps in the bottom connection layer in the method for manufacturing the optoelectronic packaging structure of the present invention.

[0048] Figure 13 The diagram shown is a schematic of the structure obtained after the optoelectronic packaging module and the optical connector are placed on the packaging substrate in the manufacturing method of the optoelectronic packaging structure of the present invention.

[0049] Explanation of reference numerals in the attached figures

[0050] 101 Bottom photoelectric connection layer

[0051] 102 Bottom Electrical Connection Layer

[0052] 103 First optical waveguide layer

[0053] 104 Bottom Base Layer

[0054] 105 First Electrical Connection Layer

[0055] 106 Bottom Support Layer

[0056] 107 Bottom Release Layer

[0057] 108 Second Electrical Connection Layer

[0058] 109 Top base layer

[0059] 110 Top Electrical Connection Layer

[0060] 111 Top Support Layer

[0061] 112 Top Release Layer

[0062] 113 Rewire Layer

[0063] 114 Opening

[0064] 115 Second optical waveguide layer

[0065] 116 Optical waveguide structure

[0066] 117 Optical Chips

[0067] 118 battery chip

[0068] 119 Optical signal output window

[0069] 120a, 120b, 120c conductive bumps

[0070] 121 Fill layer

[0071] 122 Package Substrate

[0072] 123 Optical Connector

[0073] Steps S1 to S3 Detailed Implementation

[0074] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0075] Please see Figures 1 to 13 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0076] Example 1

[0077] This embodiment provides a method for fabricating an optoelectronic packaging structure. Please refer to [link / reference]. Figure 1 The flowchart shows the steps of this manufacturing method, including the following steps:

[0078] S1: Provide a bottom optoelectronic connection layer and a top base layer. The bottom optoelectronic connection layer includes a bottom electrical connection layer and a first optical waveguide layer. The first optical waveguide layer is embedded in the bottom electrical connection layer. The top base layer includes a top electrical connection layer.

[0079] S2: The side of the top base layer with the top electrical connection layer is positioned facing the bottom optoelectronic connection layer;

[0080] S3: Connect the top electrical connection layer and the bottom optoelectronic connection layer, wherein the bottom electrical connection layer and the top electrical connection layer constitute a redistribution layer.

[0081] First, please refer to Figures 2 to 5 In step S1, a bottom optoelectronic connection layer 101 and a top base layer 109 are provided. The bottom optoelectronic connection layer 101 includes a bottom electrical connection layer 102 and a first optical waveguide layer 103 (e.g., ...). Figure 4 As shown), the first optical waveguide layer 103 is embedded in the bottom electrical connection layer 102, and the top base layer 109 includes a top electrical connection layer 110 (as shown). Figure 5 (As shown).

[0082] For example, please refer to Figures 2 to 4 Providing the bottom optoelectronic connection layer 101 includes the following steps:

[0083] like Figure 2 As shown, a bottom base layer 104 is provided, the bottom base layer 104 including a first electrical connection layer 105;

[0084] like Figure 3 As shown, a first optical waveguide layer 103 is formed on the bottom base layer 104, and the first optical waveguide layer 103 covers a portion of the first electrical connection layer 105;

[0085] As an example, the material of the first optical waveguide layer 103 includes organic optical waveguide materials (e.g., fluorinated polyimide, polysiloxane, and π-conjugated polymers, etc.), and the thickness of the first optical waveguide layer 103 ranges from 5 to 10 μm, including but not limited to 6 μm and 8 μm.

[0086] like Figure 4 As shown, a second electrical connection layer 108 is formed above the bottom base layer 104 to form the bottom optoelectronic connection layer 101. The second electrical connection layer 108 also covers the first optical waveguide layer 103. The first electrical connection layer 105 and the second electrical connection layer 108 constitute the bottom electrical connection layer 102.

[0087] As an example, such as Figure 2As shown, the bottom base layer 104 further includes a bottom support layer 106 and a bottom release layer 107, wherein the bottom release layer 107 is located between the first electrical connection layer 105 and the bottom support layer 106. The bottom support layer provides support for the first electrical connection layer, and the bottom release layer allows for subsequent removal of the bottom support layer without affecting the structural stability of the first electrical connection layer.

[0088] As an example, such as Figure 2 As shown, the first electrical connection layer 105 includes a dielectric layer ( Figure 2 (not marked in the text) and electrical connection structures located in the dielectric layer ( Figure 2 (Not specified in the text), the material of the dielectric layer includes PI, and forming the bottom base layer 104 includes the following steps: providing a bottom support layer 106, sequentially forming a bottom release layer 107 and a dielectric layer above the bottom support layer 106, the dielectric layer being formed by coating; patterning the dielectric layer to form a filling opening; forming a conductive material layer above the dielectric layer, the conductive material layer also filling the filling opening; planarizing the conductive material layer and retaining the portion located in the filling opening as an electrical connection structure.

[0089] Please see Figure 5 In step S2, the side of the top base layer 109 with the top electrical connection layer 110 is positioned facing the bottom optoelectronic connection layer 101.

[0090] Please see Figure 5 Execute step S3 to connect the top electrical connection layer 110 and the bottom photoelectric connection layer 101, wherein the bottom electrical connection layer 102 (please refer to...) Figure 4 The top electrical connection layer 110 and the above electrical connection layer 110 constitute the rewiring layer 113.

[0091] As an example, the method of connecting the top electrical connection layer 110 and the bottom optoelectronic connection layer 101 includes at least one of hybrid bonding and thermo-press bonding.

[0092] As an example, please refer to [the relevant documentation / reference]. Figure 2 , Figure 5 and Figure 6 The top base layer 109 also includes a top support layer 111 located below the top electrical connection layer 110, such as... Figure 6 As shown, after connecting the top electrical connection layer 110 and the bottom optoelectronic connection layer 101, the method further includes the step of removing the top support layer 111 to transfer the top electrical connection layer 110 onto the bottom electrical connection layer 102.

[0093] As an example, such as Figure 6As shown, the top base layer 109 also includes a top release layer 112 located between the top electrical connection layer 110 and the top support layer 111. The material of the top release layer 112 includes PI, and the method for removing the top support layer 111 includes laser debonding. In this embodiment, the overall structure of the top base layer and the bottom base layer is basically similar, both including a support layer, a release layer, and an electrical connection layer stacked sequentially from bottom to top. Correspondingly, the manufacturing steps of the top base layer are basically the same as those of the bottom base layer, only differing in some detailed structures (such as thickness, specific structure of electrical connection, etc.). That is, one way to set the top base layer and the bottom optoelectronic connection layer facing each other is to place the top base layer upside down on top of the bottom optoelectronic connection layer. Of course, other setting methods can also be used while ensuring that the top electrical connection layer and the second electrical connection layer face each other. Specifically, the laser debonding method involves applying a laser beam to the top release layer to soften it and allow it to detach from the top electrical connection layer, thereby removing the top support layer. The reasons for choosing laser debonding are as follows: laser debonding offers high precision and controllability, can be performed at room temperature, and will not negatively impact the top electrical connection layer or other structural layers. While thermal debonding, chemical debonding, thermal slip debonding, and mechanical peeling can also remove the top support layer, each electrical connection layer contains a dielectric layer. Repeated exposure of the dielectric layer to high-temperature processing environments can easily lead to warping and reliability issues. Furthermore, the optical waveguide layer is also sensitive to high temperatures. Therefore, methods requiring high-temperature conditions are not suitable for removing the top support layer described in this embodiment. Mechanical peeling and chemical debonding can easily cause damage or loss to the electrical connection layers and other structures. Therefore, laser debonding is preferred in this embodiment.

[0094] For example, please refer to Figure 7 and Figure 8 After connecting the top electrical connection layer 110 and the bottom optoelectronic connection layer 101, the following steps are also included.

[0095] like Figure 7 As shown, an opening 114 is formed that penetrates a portion of the redistribution layer 113 to expose at least a portion of the first optical waveguide layer 103. In this embodiment, the opening 114 just exposes the upper surface of one end of the first optical waveguide layer 103. In other embodiments, the opening 114 may further penetrate at least a portion of the first optical waveguide layer 103, thereby reducing the difficulty of the fabrication process and avoiding the impact of insufficient etching on the structural integrity of the subsequent optical waveguide structure and the optical signal transmission performance.

[0096] like Figure 8As shown, a second optical waveguide layer 115 is formed in the opening 114, and the second optical waveguide layer 115 is connected to the first optical waveguide layer 103 to form an optical waveguide structure 116.

[0097] Specifically, the fabrication method of this embodiment, on the one hand, while satisfying the performance requirements of the redistribution layer for electrical signal transmission, embeds the optical waveguide layer for optical signal transmission into the redistribution layer, effectively improving the overall integration of the optoelectronic packaging structure (i.e., integrating the optical signal transmission channel and the electrical signal transmission channel into one structural layer); on the other hand, by designing the fabrication steps of the redistribution layer, in addition to embedding the optical waveguide layer into the redistribution layer without increasing the difficulty of the fabrication process, it also effectively avoids the problem of repeated high-temperature baking of the dielectric layer and optical waveguide layer in part of the electrical connection layer in the redistribution layer (the traditional fabrication method of multilayer redistribution layers is to coat the dielectric material on the completed electrical connection layer after each electrical connection layer is formed and bake it at high temperature to form the dielectric layer. In this way, the dielectric layer in the bottom electrical connection layer will be baked repeatedly, which is prone to warping, deformation and cracking. Similarly, if an electrical connection layer is fabricated on a part of the optical waveguide layer, the optical waveguide layer will also undergo unnecessary high-temperature baking steps). While ensuring the structural stability and reliability of the redistribution layer, it ensures that the signal transmission performance of the optical waveguide layer is not degraded by the high-temperature process conditions.

[0098] For example, please refer to Figure 9 The fabrication method further includes the step of placing an optical chip 117 and an electrical chip 118 above the redistribution layer 113 to form an optoelectronic functional module with the redistribution layer 113. The optical chip 117 has an optical signal output window 119, which faces the second optical waveguide layer 115 (please refer to the reference). Figure 8 The optical signal generated by the optical chip 117 is emitted from the optical signal output window 119 and then transmitted through the optical waveguide structure 116.

[0099] For example, please refer to Figure 10The electrical chip 118 is electrically connected to the redistribution layer 113 in at least one of wire connection and flipchip connection, and the optical chip 117 is electrically connected to the redistribution layer 113 in the manner of flipchip connection. Furthermore, when the optical chip 117, the electrical chip 118, and the redistribution layer 113 are all electrically connected using a flip-chip connection method, that is, a conductive bump 120a is formed on the side where the optical chip 117 / electrical chip 118 connects to the redistribution layer 113 (this conductive bump 120a serves as the first conductive bump for electrical connection between the optical chip / electrical chip and the redistribution layer), and electrical connection is made with the electrical connection structure in the redistribution layer 113 through the conductive bump 120a, after the optical chip 117 and the electrical chip 118 are placed above the redistribution layer 113, a step of forming a fill layer 121 between the optical chip 117 / electrical chip 118 and the redistribution layer 113 is also included. The fill layer 121 covers the conductive bump 120a used for electrical connection to achieve an insulating protection function. It should be noted that the optical chip 117 forms a blocking structure (not shown) between the optical signal output window 119 and the conductive bump 120a, or the surface of the redistribution layer 113 forms a blocking structure (not shown) between the optical signal output window 119 and the conductive bump 120a, to prevent the filling layer from covering the exposed surfaces of the optical signal output window 119 and the second optical waveguide layer 115 of the optical waveguide structure 116, thus isolating them and preventing the smooth transmission of optical signals. The material of the blocking structure (not shown) can be PI (polyimide).

[0100] For example, please refer to Figures 11 to 13 The manufacturing method further includes the following steps:

[0101] The optoelectronic functional module is disposed above the packaging substrate 122, and the optoelectronic functional module is electrically connected to the packaging substrate 122;

[0102] like Figure 13 As shown, an optical connector 123 is disposed on the packaging substrate 122. The input end of the optical connector 123 is disposed facing the first optical waveguide layer 103 to receive the optical signal transmitted by the first optical waveguide layer 103 (the transmission path of the optical signal is as shown). Figure 13 (As indicated by the middle arrow). Of course, in other embodiments, the optoelectronic functional module and the optical connector 123 may be disposed on the packaging substrate 122 simultaneously, or the optical connector 123 may be disposed first and then the optoelectronic functional module may be disposed. No specific limitation is made here.

[0103] For example, please refer to the comparison. Figure 10 and Figure 11The bottom base layer 104 further includes a bottom support layer 106 (as described above). The process of mounting the optoelectronic functional module above the packaging substrate 122 includes the following steps:

[0104] like Figure 11 As shown, the bottom support layer 106 is removed to expose the side of the first electrical connection layer 105 facing away from the second electrical connection layer 108. Correspondingly, the method for removing the bottom support layer in this embodiment is the same as the method for removing the top support layer.

[0105] like Figure 12 As shown, a conductive bump 120b (which serves as a second conductive bump for electrical connection between the optoelectronic functional module and the packaging substrate) is formed on the exposed side of the first electrical connection layer 105 (i.e. the side of the first electrical connection layer that was originally connected to the bottom release layer).

[0106] like Figure 13 As shown, a structure with the conductive bump 120b is disposed above the packaging substrate 122 and the conductive bump 120b is connected to the packaging substrate 122.

[0107] As an example, the packaging substrate 122 has a conductive bump 120c on the side opposite to the optoelectronic functional module (the conductive bump 120c serves as the third conductive bump of the external port of the optoelectronic packaging structure) to electrically connect the optoelectronic packaging structure to other functional structures.

[0108] As an example, the encapsulation substrate 122 includes a ceramic substrate, an organic substrate (e.g., BT resin, ABF material, MIS material), a silicon substrate, and a composite material substrate.

[0109] The method for fabricating the optoelectronic packaging structure in this embodiment involves setting the top base layer and the bottom optoelectronic connection layer facing each other and connecting the top electrical connection layer and the bottom optoelectronic connection layer. This allows for the step-by-step fabrication of the redistribution layer without the bottom optoelectronic connection layer undergoing repeated baking, thus ensuring the structural stability and reliability of the optoelectronic packaging structure. Furthermore, by fabricating the optical waveguide structure in the redistribution layer in stages, optical signal transmission channels and electrical signal transmission channels are integrated in the same structural layer, effectively increasing the overall integration of the optoelectronic packaging structure, achieving high-density packaging, and the overall fabrication steps are simple and easy to implement, with low cost and easy to achieve mass production.

[0110] Example 2

[0111] This embodiment provides an optoelectronic packaging structure. Please refer to [link / reference]. Figures 1 to 13 The optoelectronic packaging structure is fabricated using the method described in Embodiment 1 or other suitable methods. The optoelectronic packaging structure includes a redistribution layer 113 and an optical waveguide structure 116.

[0112] Specifically, the redistribution layer 113 includes a bottom electrical connection layer 102 and a top electrical connection layer 110 connected to the bottom electrical connection layer 102; the optical waveguide structure 116 is embedded in the redistribution layer 113, and the optical waveguide structure 116 includes a first optical waveguide layer 103, which is located in the bottom electrical connection layer.

[0113] As an example, the method of connecting the top electrical connection layer 110 and the bottom optoelectronic connection layer 101 includes at least one of hybrid bonding and thermo-press bonding.

[0114] As an example, such as Figure 8 As shown, the optical waveguide structure 116 further includes a second optical waveguide layer 115, which penetrates a portion of the redistribution layer 113 and is connected to the first optical waveguide layer 103.

[0115] As an example, such as Figure 9 As shown, the optoelectronic packaging structure also includes an optical chip 117 and an electrical chip 118. The optical chip 117 and the electrical chip 118 are both disposed above the redistribution layer 113 to form an optoelectronic functional module with the redistribution layer 113. The optical chip 117 has an optical signal output window 119, which is located above the second optical waveguide layer 115. The optical signal generated by the optical chip 117 is emitted from the optical signal output window 119 and then transmitted through the optical waveguide structure 116.

[0116] As an example, the electrical chip 118 is electrically connected to the redistribution layer 113 via at least one of wire connection and flip-chip connection, and the optical chip 117 is electrically connected to the redistribution layer 113 via flip-chip connection. In this embodiment, the optical chip 117, the electrical chip 118, and the redistribution layer 113 are all electrically connected via flip-chip connection. The optoelectronic functional module also includes conductive bumps electrically connecting the optical chip 117 / the electrical chip 118 to the redistribution layer 113 and a filling layer 121 covering the conductive bumps.

[0117] As an example, the optoelectronic packaging structure also includes a packaging substrate 122, and the optoelectronic functional module is disposed on the packaging substrate 122. Furthermore, the optoelectronic functional module is electrically connected to the packaging substrate 122 in a manner that includes flip-chip (i.e., electrically connected through conductive bumps disposed below the optoelectronic functional module).

[0118] As an example, the optoelectronic packaging structure further includes an optical connector 123, which is disposed above the packaging substrate 122, and the input end of the optical connector 123 is disposed facing the first optical waveguide layer 103 to receive the optical signal transmitted by the first optical waveguide layer 103.

[0119] In this embodiment, the optoelectronic packaging structure places the optical waveguide structure in the redistribution layer, and integrates the optical signal transmission channel and the electrical signal transmission channel in the same structural layer. The overall integration of the optoelectronic packaging structure is effectively increased to achieve high-density packaging. At the same time, the redistribution layer is fabricated in a distributed manner, which effectively ensures the structural stability and reliability of the optoelectronic packaging structure and meets the application requirements of high reliability and high stability.

[0120] In summary, the method for fabricating the optoelectronic packaging structure of the present invention, by setting the top base layer and the bottom optoelectronic connection layer facing each other and connecting the top electrical connection layer and the bottom optoelectronic connection layer, achieves step-by-step fabrication of the redistribution layer without repeated baking of the bottom optoelectronic connection layer, thus ensuring the structural stability and reliability of the optoelectronic packaging structure. Furthermore, by fabricating the optical waveguide structure step-by-step within the redistribution layer, integrating optical signal transmission channels and electrical signal transmission channels within the same structural layer, the overall integration of the optoelectronic packaging structure is effectively increased, achieving high-density packaging. Moreover, the overall fabrication steps are simple and easy to implement, with low cost, and easy to achieve mass production. The optoelectronic packaging structure of the present invention, by setting the optical waveguide structure within the redistribution layer and integrating the optical signal transmission channels and electrical signal transmission channels within the same structural layer, effectively increases the overall integration of the optoelectronic packaging structure to achieve high-density packaging. Simultaneously, the redistribution layer is fabricated in a distributed manner, effectively ensuring the structural stability and reliability of the optoelectronic packaging structure, meeting the requirements of high reliability and high stability applications. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has high industrial applicability.

[0121] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for fabricating an optoelectronic packaging structure, characterized in that, Includes the following steps: A bottom optoelectronic connection layer and a top base layer are provided. The bottom optoelectronic connection layer includes a bottom electrical connection layer and a first optical waveguide layer. The first optical waveguide layer is embedded in the bottom electrical connection layer. The top base layer includes a top electrical connection layer. The side of the top base layer that has the top electrical connection layer is positioned facing the bottom optoelectronic connection layer; The top electrical connection layer and the bottom optoelectronic connection layer are connected, wherein the bottom electrical connection layer and the top electrical connection layer constitute a redistribution layer.

2. The method for fabricating the optoelectronic packaging structure according to claim 1, characterized in that, Providing the bottom optoelectronic connection layer includes the following steps: A bottom base layer is provided, the bottom base layer including a first electrical connection layer; A first optical waveguide layer is formed on the bottom base layer, and the first optical waveguide layer covers a portion of the first electrical connection layer; A second electrical connection layer is formed above the bottom base layer to constitute the bottom optoelectronic connection layer. The second electrical connection layer also covers the first optical waveguide layer. The first electrical connection layer and the second electrical connection layer constitute the bottom electrical connection layer.

3. The method for fabricating the optoelectronic packaging structure according to claim 2, characterized in that, After connecting the top electrical connection layer and the bottom optoelectronic connection layer, the following steps are also included. An opening is formed that penetrates a portion of the redistribution layer to expose at least a portion of the first optical waveguide layer; A second optical waveguide layer is formed within the opening, and the second optical waveguide layer is connected to the first optical waveguide layer to form an optical waveguide structure.

4. The method for fabricating the optoelectronic packaging structure according to claim 3, characterized in that: The manufacturing method further includes the step of setting an optical chip and an electrical chip above the redistribution layer to form an optoelectronic functional module with the redistribution layer. The optical chip has an optical signal output window, which is positioned facing the second optical waveguide layer. The optical signal generated by the optical chip is emitted from the optical signal output window and then transmitted through the optical waveguide structure.

5. The method for fabricating the optoelectronic packaging structure according to claim 4, characterized in that, The manufacturing method also includes the following steps: The optoelectronic functional module is disposed on the top of the packaging substrate, and the optoelectronic functional module is electrically connected to the packaging substrate. An optical connector is disposed on the packaging substrate, and the input end of the optical connector is disposed facing the first optical waveguide layer to receive the optical signal transmitted by the first optical waveguide layer.

6. The method for fabricating the optoelectronic packaging structure according to claim 4, characterized in that, The bottom base layer also includes a bottom support layer. The process of mounting the optoelectronic functional module above the packaging substrate includes the following steps: Remove the bottom support layer to expose the side of the first electrical connection layer that faces away from the second electrical connection layer; Conductive bumps are formed on one exposed surface of the first electrical connection layer; A structure with the conductive bumps is disposed above the packaging substrate and the conductive bumps are connected to the packaging substrate.

7. The method for fabricating the optoelectronic packaging structure according to claim 1, characterized in that: The method of connecting the top electrical connection layer and the bottom optoelectronic connection layer includes at least one of hybrid bonding and thermo-press bonding.

8. The method for fabricating the optoelectronic packaging structure according to claim 1, characterized in that: The top base layer also includes a top support layer located below the top electrical connection layer. After connecting the top electrical connection layer and the bottom optoelectronic connection layer, the method further includes a step of removing the top support layer to transfer the top electrical connection layer onto the bottom electrical connection layer.

9. The method for fabricating the optoelectronic packaging structure according to claim 8, characterized in that: The top base layer also includes a top release layer located between the top electrical connection layer and the top support layer, and the method for removing the top support layer includes laser debonding.

10. A photoelectric packaging structure, characterized in that, include: The redistribution layer includes a bottom electrical connection layer and a top electrical connection layer connected to the bottom electrical connection layer; An optical waveguide structure is embedded in the redistribution layer. The optical waveguide structure includes a first optical waveguide layer, which is located in the bottom electrical connection layer.

11. The optoelectronic packaging structure according to claim 10, characterized in that: The method of connecting the top electrical connection layer and the bottom optoelectronic connection layer includes at least one of hybrid bonding and thermo-press bonding.

12. The optoelectronic packaging structure according to claim 10, characterized in that: The optical waveguide structure further includes a second optical waveguide layer, which penetrates a portion of the redistribution layer and is connected to the first optical waveguide layer to form the optical waveguide structure.

13. The optoelectronic packaging structure according to claim 12, characterized in that: The optoelectronic packaging structure further includes an optical chip and an electrical chip. The optical chip and the electrical chip are both disposed above the redistribution layer to form an optoelectronic functional module with the redistribution layer. The optical chip has an optical signal output window, which faces the second optical waveguide layer. The optical signal generated by the optical chip is emitted from the optical signal output window and then transmitted through the optical waveguide structure.

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