A high temperature shaped cell for silicon carbide growth

Abstract

This invention discloses a high-temperature forming chamber for silicon carbide growth, relating to the field of silicon carbide technology. It includes a chamber body with moving mechanisms on both sides, each connected to a tensioning mechanism. Each moving mechanism includes a reciprocating lead screw rotatably connected to the center of both sides of the chamber body. The tensioning mechanism includes a moving block threaded to the surface of the reciprocating lead screw, with a positioning block fixed to the other side of the moving block. A fixed block is also included, with rotating shafts rotatably connected to both sides and the center of each side of the positioning block. Through the cooperation of the moving and tensioning mechanisms, this invention enables the induction coil ring to move up and down reciprocally and to contract and expand during localized cyclic heating. This allows for better adjustment of the heating position and range based on the surface condition of the graphite crucible, ensuring uniform heating throughout the graphite crucible. This promotes uniform growth of silicon carbide crystals, reduces crystal defects caused by temperature differences, and improves crystal quality.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide technology, and more specifically to a high-temperature molding chamber for silicon carbide growth. Background Technology

[0002] With the rapid development of industries such as semiconductors, abrasives, and high-temperature semiconductor devices, increasingly higher demands are being placed on the performance and quality of silicon carbide crystals. Silicon carbide possesses excellent physical and chemical properties, such as high hardness, high thermal stability, high thermal conductivity, and high breakdown electric field strength, making it a promising candidate for applications in these fields. In the field of silicon carbide growth, the growth of silicon carbide crystals requires a specific high-temperature environment, typically employing various types of molding chambers and heating devices to create and maintain the conditions necessary for crystal growth. However, traditional heating methods and molding chamber structures have certain limitations in practical applications, making it difficult to adequately meet the demands for high-quality silicon carbide crystal growth.

[0003] Silicon carbide crystal growth is a dynamic process, and the requirements for the heating area of ​​the graphite crucible change at different growth stages. In the early stages of growth, concentrated heating of the bottom and middle of the graphite crucible may be necessary to quickly initiate the sublimation process of the raw material and establish the initial gas-phase transport environment. If the heating device cannot flexibly adjust the heating area, heat cannot be quickly and effectively concentrated in these critical areas, resulting in slow sublimation and prolonged growth. In the middle stages of growth, when the crystal begins to deposit and grow on the seed crystal surface, to ensure uniform crystal growth, the heating area may need to be appropriately extended upwards to maintain the temperature at the top of the graphite crucible within a suitable range, ensuring uniform transport of gaseous material to the seed crystal. However, existing devices with fixed heating areas cannot make such adjustments in a timely manner, easily leading to unsuitable upper temperatures and uneven crystal growth, such as excessively fast or slow growth rates at the crystal edges, affecting the overall quality and dimensional accuracy of the crystal. Summary of the Invention

[0004] The purpose of this invention is to provide a high-temperature molding chamber for silicon carbide growth, thereby solving the problems existing in the background art.

[0005] The objective of this invention can be achieved through the following technical solutions:

[0006] A high-temperature forming chamber for silicon carbide growth includes a chamber body, with moving mechanisms on both sides of the chamber body, and the moving mechanisms are connected to a tensioning mechanism. The moving mechanism includes a reciprocating lead screw column rotatably connected to the middle of both sides of the chamber body.

[0007] The tensioning mechanism includes a moving block threaded to the surface of a reciprocating lead screw, and a positioning block is fixed to the other side of the moving block;

[0008] A fixed block is fixed to both sides of the positioning block and has a rotating shaft connected to the center of each side. A pushing block is fixed to one side of the rotating shaft.

[0009] The limiting block is provided with three sets of sliding grooves that slide in the positioning block and the other end is set in the arc groove in the induction coil ring;

[0010] The rotation of the two sets of push blocks causes the three sets of induction coil rings to rotate with the push blocks, thereby realizing the up-and-down contraction and expansion movement of the three sets of induction coil rings.

[0011] As a further aspect of the present invention: the tensioning mechanism further includes a second motor, which is fixedly connected to the moving block and has two output ends fixedly connected to drive shafts rotating on both sides of the moving block.

[0012] Bevel gear one is fixed to the other end of the drive shaft and meshed with bevel gear two;

[0013] The limiting post is provided with multiple sections that are fixed between the sliding grooves of the fixed block and the positioning block;

[0014] The limit springs are provided in four sets and are sleeved on the surface of the limit post.

[0015] As a further embodiment of the present invention: two sets of the limiting springs are fixed between the positioning block and the two side limiting blocks, and the other two sets of the limiting springs are disposed between the fixed block and the middle limiting block.

[0016] The limiting post is equipped with a surface sliding connection limiting block.

[0017] As a further aspect of the present invention: the moving mechanism includes a motor, which is fixedly connected to the chamber and has a transmission shaft fixedly connected to its output end;

[0018] The worm gear is fixed to the output end of the transmission shaft and meshes with a worm wheel.

[0019] The limiting plate is fixed to the inside of the chamber and is rotatably connected to the worm gear in the middle.

[0020] As a further embodiment of the present invention: the reciprocating lead screw is fixed to the middle of the worm gear and rotates within the housing;

[0021] The movable block slides in a groove opened inside the chamber;

[0022] The push block is positioned between two connected sets of induction coil rings.

[0023] As a further aspect of the present invention, it also includes a surrounding mechanism for realizing the rotation of the induction coil ring.

[0024] As a further aspect of the present invention: the surrounding mechanism includes a positioning plate, which has two plates and is fixed to both sides of one end of the positioning block;

[0025] Motor 3 is fixed to the surface of one of the positioning plates;

[0026] The rotating column is fixed to the output end of motor three and rotates in the middle of the positioning plate;

[0027] An extension plate is fixedly attached to one end of the rotating column;

[0028] A small gear is fixed to the surface of the rotating column and the extension plate and meshes with a toothed ring fixed to the surface of the induction coil ring.

[0029] The limiting clamps are located on both sides of the pinion and fixed to one end of the limiting block.

[0030] As a further embodiment of the present invention: the limiting clamp slides in a groove opened on one side of the induction coil ring;

[0031] The rotating column and the extension plate rotate at the middle of the limiting clamp.

[0032] As a further aspect of the present invention: a protective cover is attached to the top of the chamber, and a motor is fixedly connected to the surface of the protective cover;

[0033] The output end of the motor is fixedly connected to a rotating bracket that rotates in the middle of the protective cover, and an extension bracket is slidably connected inside the rotating bracket, and an extension bracket with a seed crystal disk fixed at one end is slidably connected inside the rotating bracket.

[0034] The rotating support and the extension support are connected by a limiting pin.

[0035] As a further embodiment of the present invention: a quartz tube is fixedly connected to the chamber, an insulation body is fixedly connected to the inner side of the quartz tube, a graphite crucible is fixedly connected to the inner side of the insulation body, and a gas phase cylinder is fixed in the middle of the chamber and the graphite crucible.

[0036] A storage tray is slidably connected inside the graphite crucible for placing silicon carbide;

[0037] A gas source device is fixedly connected to the outside of the chamber. One end of the gas source device is fixedly connected to a transmission pipe, and the other end of the transmission pipe is fixedly connected to and connected to the inside of the gas cylinder.

[0038] The beneficial effects of this invention are:

[0039] (1) In this invention, the moving mechanism and the retracting mechanism can be combined to realize the reciprocating movement of the induction coil ring and the contraction and diffusion during local cyclic heating. The heating position and range can be better adjusted according to the surface condition of the graphite crucible, so that all parts inside the graphite crucible can be heated evenly, which is conducive to the uniform growth of silicon carbide crystals, reduces crystal defects caused by temperature differences, and improves crystal quality.

[0040] (2) In this invention, when the graphite crucible needs to be locally circulated and heated, the second motor drives the relevant components to make the induction coil ring rotate with the push block and use the counter-thrust of the limit spring to contract and expand. It can also adjust the spacing between adjacent induction coil rings, which can flexibly meet the heating area requirements of different parts of the graphite crucible at different growth stages, enhance the adaptability of the device to complex heating requirements, and help optimize the silicon carbide crystal growth process.

[0041] (3) The setting of the circling mechanism in this invention enables the induction coil ring to rotate during the heating process, which effectively improves the uniformity of the induction coil ring during heating, further ensuring the efficiency and effect of electromagnetic induction heating, making the temperature field more stable and uniform during the growth of silicon carbide crystal, and providing more favorable conditions for the growth of high-quality silicon carbide crystal. Attached Figure Description

[0042] The invention will now be further described with reference to the accompanying drawings.

[0043] Figure 1 This is a three-dimensional structural schematic diagram of the present invention;

[0044] Figure 2 This is a cross-sectional structural diagram of the present invention. Figure 1 ;

[0045] Figure 3 This is a cross-sectional structural diagram of the present invention. Figure 2 ;

[0046] Figure 4 This is a partial three-dimensional structural schematic diagram of the present invention;

[0047] Figure 5 yes Figure 4 Enlarged view of point A in the middle;

[0048] Figure 6 This is a three-dimensional structural diagram of the tensioning mechanism in this invention;

[0049] Figure 7 This is a cross-sectional structural diagram of the tensioning mechanism in this invention;

[0050] Figure 8 This is a three-dimensional structural diagram of the surrounding mechanism in this invention.

[0051] In the diagram: 1. Bin body; 2. Moving mechanism; 20. Motor 1; 21. Transmission shaft; 22. Worm gear; 23. Worm wheel; 24. Limiting plate; 25. Reciprocating lead screw; 3. Tensioning mechanism; 300. Induction coil ring; 301. Positioning block; 302. Moving block; 303. Motor 2; 304. Transmission shaft; 305. Bevel gear 1; 306. Bevel gear 2; 307. Rotating shaft; 308. Pushing block; 309. Limiting block; 310. Limiting post; 311. Limiting spring; 312, fixing block; 4, surrounding mechanism; 40, positioning plate; 41, motor three; 42, limiting clamp; 43, pinion; 44, gear ring; 45, rotating column; 46, extension plate; 5, quartz tube; 6, heat insulation body; 7, graphite crucible; 8, storage tray; 9, vapor phase cylinder; 11, motor four; 12, rotating support; 13, extension support; 14, limiting pin; 15, seed crystal disk; 17, protective cover; 18, vapor phase source gas equipment; 19, transmission pipe. Detailed Implementation

[0052] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0053] Example 1

[0054] Please see Figures 1-8 As shown, the present invention is a high-temperature forming chamber for silicon carbide growth, including a chamber body 1. Movable mechanisms 2 are provided on both sides of the chamber body 1, and the movable mechanisms 2 are connected to the tensioning mechanism 3. The movable mechanism 2 includes a reciprocating lead screw 25 rotatably connected to the middle of both sides of the chamber body 1.

[0055] The tensioning mechanism 3 includes a moving block 302 threadedly connected to the surface of the reciprocating lead screw 25, and a positioning block 301 fixedly connected to the other side of the moving block 302;

[0056] The fixed block 312 is fixedly connected to the two sides and the middle of the positioning block 301, and a rotating shaft 307 is connected to it. A push block 308 is fixedly connected to one side of the rotating shaft 307.

[0057] The limiting block 309 is provided with three sets of sliding grooves that slide in the positioning block 301, and the other end is provided in the arc-shaped groove in the induction coil ring 300.

[0058] The two sets of push blocks 308 rotate, causing the three sets of induction coil rings 300 to rotate with the push blocks 308, thereby realizing the vertical contraction and expansion movement of the three sets of induction coil rings 300.

[0059] It should be noted that all rotating shafts 307 are rotatably connected to one side of the positioning block 301 to avoid interference when the rotating shafts 307 rotate;

[0060] The induction coil ring 300 rotates on the surface of the limiting block 309 and is positioned between the chamber 1 and the quartz tube 5;

[0061] The induction coil loop 300 is electrically connected and wirelessly transmitted and controlled by an external controller (not shown).

[0062] In this invention, preferably, the tensioning mechanism 3 further includes a motor 303, which is fixedly connected to the moving block 302 and has two output ends fixedly connected to a transmission shaft 304 rotating on both sides of the moving block 302.

[0063] Bevel gear 305 is fixed to the other end of transmission shaft 304 and meshed with bevel gear 306;

[0064] The limiting post 310 is provided with multiple sections fixed between the sliding groove of the fixing block 312 and the positioning block 301;

[0065] The limit spring 311 has four sets and is sleeved on the surface of the limit post 310.

[0066] It should be noted that both bevel gear 1 305 and bevel gear 2 306 are placed in the protective box on one side of the positioning block 301 to avoid interference when bevel gear 1 305 and bevel gear 2 306 mesh.

[0067] The fixing block 312 slides on the surface of the limiting post 310;

[0068] Motor 2 303 is a dual-output motor.

[0069] In this invention, preferably, two sets of limiting springs 311 are fixed between the positioning block 301 and the two side limiting blocks 309, and the other two sets of limiting springs 311 are disposed between the fixing block 312 and the middle limiting block 309.

[0070] The limiting post 310 is equipped with a surface sliding connection limiting block 309.

[0071] In this invention, preferably, the moving mechanism 2 includes a motor 20, which is fixedly connected to the chamber 1 and has a transmission shaft 21 fixedly connected to its output end;

[0072] The worm 22 is fixed to the output end of the transmission shaft 21 and is meshed with the worm wheel 23;

[0073] Limiting plate 24, fixed inside the chamber 1 and connecting worm gear 22 that rotates in the middle.

[0074] It should be noted that the motor 20, transmission shaft 21, worm gear 22, worm wheel 23, and limiting plate 24 are located in the space between the chamber 1 and the graphite crucible 7 to avoid interference.

[0075] In this invention, preferably, the reciprocating lead screw 25 is fixed to the middle of the worm gear 23 and rotates within the housing 1;

[0076] The movable block 302 slides in the groove opened inside the chamber 1;

[0077] The push block 308 is positioned between two connected sets of induction coil rings 300.

[0078] It should be noted that one end of the reciprocating screw 25 is fixed to a column and rotates at the bottom of the housing 1 to avoid interference caused by the entire reciprocating screw 25 being threaded.

[0079] During implementation, when it is necessary to heat the inside of the graphite crucible 7, the three sets of induction coil rings 300 are energized, so that the three sets of induction coil rings 300 heat the inside of the graphite crucible 7 through electromagnetic induction.

[0080] A motor 20 is set up. The output end of the motor 20 drives the transmission shaft 21 and the worm gear 22 to rotate along the middle of the limiting plate 24. The worm gear 22 drives the worm wheel 23 to rotate. The worm wheel 23 drives the reciprocating screw column 25 to rotate along the inside of the chamber 1. The rotation of the reciprocating screw column 25 causes the moving block 302 to move back and forth along the sliding groove inside the chamber 1 and the surface of the reciprocating screw column 25. The moving block 302 moves the positioning block 301. The positioning block 301 moves up and down with the limiting column 310, the limiting block 309 and the induction coil ring 300. In this way, the heating effect of the graphite crucible 7 is increased according to the up and down movement of the surface of the graphite crucible 7.

[0081] When the graphite crucible 7 requires localized circulating heating, the three sets of induction coil rings 300 stop motor 1 20 when they move to the corresponding positions, and motor 2 303 is set. The output end of motor 2 303 drives two drive shafts 304 to rotate along the moving block 302. The drive shafts 304 drive bevel gear 1 305 to rotate and mesh with bevel gear 2 306. Bevel gear 2 306 drives rotating shaft 307 to rotate along the fixed block 312. Rotating shaft 307 drives pushing block 308 to rotate. The two connected induction coil rings 300 rotate with pushing block 308 and are contracted and diffused by the counter-thrust of limiting spring 311, thereby enhancing the electromagnetic induction heating effect. At the same time, the distance between two adjacent induction coil rings 300 can be adjusted by rotating pushing block 308 to ensure the heating effect.

[0082] Example 2

[0083] Preferably, the present invention further includes a circling mechanism 4 for realizing the circling rotation of the induction coil ring 300.

[0084] In this invention, preferably, the surrounding mechanism 4 includes a positioning plate 40, which has two plates and is fixed to both sides of one end of the positioning block 301;

[0085] Motor 3 41 is fixedly connected to the surface of one of the positioning plates 40;

[0086] The rotating column 45 is fixed to the output end of the motor 41 and rotates in the middle of the positioning plate 40;

[0087] Extension plate 46 is fixed to one end of rotating column 45;

[0088] The pinion 43 is fixedly connected to the surfaces of the rotating column 45 and the extension plate 46 and meshes with the toothed ring 44 fixedly connected to the surface of the induction coil ring 300.

[0089] The limiting clamp 42 is disposed on both sides of the pinion 43 and fixed to one end of the limiting block 309.

[0090] In this invention, preferably, the limiting clamp 42 slides in a groove opened on one side of the induction coil ring 300;

[0091] The rotating column 45 and the extension plate 46 rotate at the middle of the limiting clamp 42.

[0092] It should be noted that the limiting clamp 42 is fixed on 309 and can move up and down with the limiting block 309, so that the gear ring 44 and the pinion 43 move synchronously, ensuring that the gear ring 44 and the pinion 43 maintain a meshing relationship.

[0093] The limiting clamps 42 are provided on both sides of the pinion 43 to prevent the pinion 43 from falling off;

[0094] The middle part of the limiting clamp 42 is rotatably connected to the rotating column 45 and the extension plate 46 to ensure that the pinion 43 rotates.

[0095] The radius of the push block 308 to the induction coil ring 300 is greater than the radius of the toothed ring 44 to the induction coil ring 300, so as to avoid interference when the toothed ring 44 and the push block 308 rotate.

[0096] During the implementation process, when the induction coil ring 300 is heating, a motor 3 41 is set up. The output end of the motor 3 41 drives the rotating column 45 and the extension plate 46 to rotate. The rotating column 45 and the extension plate 46 drive the pinion 43 to rotate along the middle of the limiting clamp 42. The pinion 43 drives the gear ring 44 to rotate. The gear ring 44 drives the induction coil ring 300 to rotate along the limiting block 309, so that the induction coil ring 300 rotates around during electromagnetic induction heating, which can effectively improve the uniformity of the heating of the induction coil ring 300 and improve the uniformity of electromagnetic induction heating of the induction coil ring 300.

[0097] Example 3

[0098] In this invention, preferably, the top of the chamber 1 is connected to a protective cover 17, and a motor 11 is fixedly attached to the surface of the protective cover 17.

[0099] The output end of motor 4 11 is fixedly connected to a rotating support 12 that rotates in the middle of the protective cover 17, and an extension support 13 is slidably connected inside the rotating support 12, and an extension support 13 with a seed crystal disk 15 fixedly connected at one end is slidably connected inside the rotating support 12.

[0100] The rotating support 12 and the extension support 13 are connected by a limiting pin 14.

[0101] It should be noted that both the rotating support 12 and the extension support 13 are provided with limit holes on their surfaces to facilitate the passage of the limit pin 14 for limiting.

[0102] The container body 1 is provided with a docking groove, and the bottom of both ends of the protective cover 17 are fixed with docking blocks for connecting with the docking groove of the container body 1.

[0103] In this invention, preferably, a quartz tube 5 is fixedly connected inside the chamber 1, an insulation body 6 is fixedly connected to the inner side of the quartz tube 5, a graphite crucible 7 is fixedly connected to the inner side of the insulation body 6, and a gas phase cylinder 9 is fixed in the middle of the chamber 1 and the graphite crucible 7.

[0104] A storage tray 8 is slidably connected inside the graphite crucible 7 for placing silicon carbide;

[0105] A gas source gas device 18 is fixedly connected to the outside of the chamber 1. One end of the gas source gas device 18 is fixedly connected to a transmission pipe 19, and the other end of the transmission pipe 19 is fixedly connected to and connected to the inside of the gas cylinder 9.

[0106] It should be noted that the storage tray 8 slides on the outer surface of the gas phase cylinder 9, and a dustproof screen is provided at one end of the gas phase cylinder 9 to prevent dust from entering.

[0107] During implementation, the seed crystal is placed inside the seed crystal tray 15, and the extension tray 13 is pulled. The extension tray 13 moves downward along the inside of the rotating tray 12 to adjust the distance between it and the silicon carbide inside the storage tray 8. When the appropriate distance is adjusted, the limiting pin 14 is placed inside the rotating tray 12 and the extension tray 13 to limit the distance.

[0108] The silicon carbide raw material is placed inside the storage tray 8, and the protective cover 17 is placed on the chamber 1 to complete the sealing. A gas source gas device 18 is set up. The gas source gas device 18 adds gaseous components into the graphite crucible 7 through the transmission pipe 19 and the gas cylinder 9. Under the high temperature inside the graphite crucible 7, the silicon carbide raw material sublimates into gaseous silicon and carbon compounds. Under the action of the temperature gradient, these gaseous substances are transported to the seed crystal at a lower temperature and deposited on the surface of the seed crystal to grow into crystals.

[0109] Motor 4 11 is set up. The output end of motor 4 11 drives the rotating support 12, the extension support 13, the limiting pin 14 and the seed crystal disk 15 to rotate, so that the surface temperature is uniform and the crystal grows uniformly.

[0110] The embodiments of the present invention have been described in detail above, but the content described is only a preferred embodiment of the present invention and should not be considered as limiting the scope of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the patent coverage of the present invention.

Claims

1. A high-temperature molding chamber for silicon carbide growth, characterized in that, Includes a storage body (1), and both sides of the storage body (1) are provided with moving mechanisms (2), and the moving mechanisms (2) are connected to the tensioning mechanism (3). The moving mechanism (2) includes a reciprocating screw column (25) rotatably connected to the middle of both sides of the storage body (1). The tensioning mechanism (3) includes a moving block (302) threaded to the surface of the reciprocating screw column (25), and a positioning block (301) is fixed to the other side of the moving block (302). The fixing block (312) is fixedly connected to the positioning block (301) on both sides and the middle of which are connected to the rotating shaft (307). A pushing block (308) is fixedly connected to one side of the rotating shaft (307). Motor 2 (303) is fixed inside the movable block (302) and both output ends are fixed with drive shafts (304) on both sides of the movable block (302). A first bevel gear (305) is fixed to the other end of the transmission shaft (304) and meshed with a second bevel gear (306). The limiting post (310) is provided with multiple sections fixed between the sliding groove of the fixing block (312) and the positioning block (301); The limiting spring (311) has four sets and is sleeved on the surface of the limiting post (310); Two sets of the limiting springs (311) are fixed between the positioning block (301) and the two side limiting blocks (309), and the other two sets of the limiting springs (311) are disposed between the fixing block (312) and the middle limiting block (309); The limiting block (309) is provided with three sets of sliding grooves that slide in the positioning block (301) and the other end is provided in the arc groove in the induction coil ring (300); The two sets of push blocks (308) rotate, causing the three sets of induction coil rings (300) to rotate with the push blocks (308), thereby realizing the up-and-down contraction and diffusion movement of the three sets of induction coil rings (300).

2. The high-temperature molding chamber for silicon carbide growth according to claim 1, characterized in that, The limiting post (310) is provided with a surface sliding connection limiting block (309).

3. The high-temperature molding chamber for silicon carbide growth according to claim 1, characterized in that, The moving mechanism (2) includes a motor (20), which is fixed inside the chamber (1) and has a transmission shaft (21) fixed at its output end. The worm (22) is fixed to the output end of the transmission shaft (21) and meshed with a worm wheel (23); Limit plate (24), fixed inside the chamber (1) and connected to worm gear (22) in the middle.

4. A high-temperature molding chamber for silicon carbide growth according to claim 1, characterized in that, The reciprocating lead screw (25) is fixed to the middle of the worm gear (23) and rotates inside the housing (1); The movable block (302) slides in the groove opened inside the compartment (1); The push block (308) is disposed between two connected sets of induction coil rings (300).

5. A high-temperature molding chamber for silicon carbide growth according to claim 1, characterized in that, It also includes a circling mechanism (4) for enabling the induction coil ring (300) to rotate around.

6. A high-temperature molding chamber for silicon carbide growth according to claim 5, characterized in that, The surrounding mechanism (4) includes a positioning plate (40), which has two plates and is fixed to both sides of one end of the positioning block (301); Motor 3 (41) is fixed to the surface of one of the positioning plates (40); The rotating column (45) is fixed to the output end of the motor (41) and rotates in the middle of the positioning plate (40); An extension plate (46) is fixed to one end of a rotating column (45); The pinion (43) is fixed to the surface of the rotating column (45) and the extension plate (46) and meshes with the toothed ring (44) fixed to the surface of the induction coil ring (300). The limiting clamp (42) is set on both sides of the pinion (43) and fixed to one end of the limiting block (309).

7. A high-temperature molding chamber for silicon carbide growth according to claim 6, characterized in that, The limiting clamp (42) slides in a groove opened on one side of the induction coil ring (300); The rotating column (45) and the extension plate (46) rotate at the middle of the limiting clamp (42).

8. A high-temperature molding chamber for silicon carbide growth according to claim 1, characterized in that, The top of the chamber (1) is connected to a protective cover (17), and a motor (11) is fixed to the surface of the protective cover (17). The output end of the motor (11) is fixedly connected to a rotating bracket (12) that rotates in the middle of the protective cover (17), and an extension bracket (13) is slidably connected inside the rotating bracket (12), and an extension bracket (13) with a seed crystal disk (15) fixedly connected at one end is slidably connected inside the rotating bracket (12). The rotating support (12) and the extension support (13) are connected by a limiting pin (14).

9. A high-temperature molding chamber for silicon carbide growth according to claim 1, characterized in that, A quartz tube (5) is fixed inside the chamber (1), an insulation body (6) is fixed inside the quartz tube (5), a graphite crucible (7) is fixed inside the insulation body (6), and a gas phase cylinder (9) is fixed in the middle of the chamber (1) and the graphite crucible (7). The graphite crucible (7) is slidably connected to a storage tray (8) for placing silicon carbide; A gas source gas device (18) is fixedly connected to the outside of the chamber (1). One end of the gas source gas device (18) is fixedly connected to a transmission pipe (19), and the other end of the transmission pipe (19) is fixedly connected to and connected to the inside of the gas cylinder (9).

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