Flow guiding device and chemical vapor deposition apparatus

Abstract

This invention belongs to the field of silicon carbide crystal growth technology, specifically relating to the structural optimization design of chemical vapor deposition equipment. A flow guiding device is installed within a sealed deposition chamber; the flow guiding device includes a rotating structure and a mixing structure disposed at the lower end of the rotating structure; the rotating structure includes a rotating shaft, and upper and lower rotating arms mounted on the rotating shaft, parallel to each other and distributed vertically; the mixing structure has a gas channel. This invention, through structural improvements, aims to optimize the uniformity of the distribution of gas-phase pyrolysis materials, promoting the uniformity of semiconductor crystal growth, especially large-size crystal growth.

Description

Technical Field

[0001] This invention belongs to the field of silicon carbide crystal growth technology, specifically involving the structural optimization design of chemical vapor deposition equipment. Background Technology

[0002] Silicon carbide (SiC) is a typical wide-bandgap semiconductor material and the third generation of semiconductor materials after silicon and gallium arsenide (GaAs). Compared with silicon and GaAs, SiC has superior properties such as high thermal conductivity, high breakdown field strength, and high saturated electron drift velocity, making it promising for applications in high-temperature, high-frequency, high-power, and radiation-resistant devices.

[0003] Chemical vapor deposition (CVD) technology can be applied to the growth of silicon carbide materials. During CVD, the reactor is heated by electromagnetic induction or resistance to create a high-temperature zone inside the furnace. Introducing precursor gas and carrier gas into the furnace allows the precursor gas to pyrolyze under the high-temperature environment, producing gaseous intermediate products that promote the growth of silicon carbide thin films.

[0004] In practical applications, traditional chemical vapor deposition equipment suffers from uneven gas distribution within the furnace due to the exhaust configuration of the inlet and outlet. The gas density at the bottom is often lower than that at the top, which is detrimental to the uniformity of crystal growth.

[0005] The document with authorization announcement number CN119082876B discloses a silicon carbide crystal deposition apparatus and method. By setting a porous partition, the deposition space inside the enclosure is divided into a lower reaction space and an upper feeding space. This allows fresh material to be added to the feeding space separately without mixing with the material in the reaction space. The reaction space and the feeding space can be fed by corresponding pipelines, so that the fresh material in the upper part is added to the lower part with a lower concentration through corresponding guide holes, so as to achieve the consistency of crystal growth rate between the corner area of ​​the rod and other areas as much as possible.

[0006] However, directly supplementing the material to the lower region will directly change the gas flow state in that region, making it easier to form an unevenly distributed gas state in that region. When it is necessary to generate large-size (≥8 inches) crystals, this gas inhomogeneity is amplified due to the increase in radial size, which is not conducive to the uniformity of large-size crystal growth. Summary of the Invention

[0007] To address the aforementioned problems, the present invention aims to provide a flow guiding device and a chemical vapor deposition apparatus. Through structural improvements, it seeks to optimize the uniformity of the distribution of vapor-phase pyrolysis materials and promote the uniformity of semiconductor crystal growth, especially large-size crystal growth.

[0008] The specific technical solution of the present invention is as follows:

[0009] A flow guiding device is installed in a sealed deposition chamber; the flow guiding device includes a rotating structure and a mixing structure disposed at the lower end of the rotating structure; the rotating structure includes a rotating shaft, an upper rotating arm and a lower rotating arm mounted on the rotating shaft, which are parallel to each other and distributed vertically; the mixing structure has a gas channel.

[0010] Generally, while the substrate in a chemical vapor deposition (CVD) apparatus can improve radial uniformity and average the incident flux along the normal direction of the substrate surface, it cannot solve the problem of uneven gas (active group) concentration distribution within the overall reactor space. Common top-spray inlets create stagnant flow in the center of the reaction chamber, leading to excessively rapid gas renewal in the central region and the formation of eddies in the peripheral regions. This flow field difference is directly reflected in the boundary layer thickness—a thinner boundary layer in the central region results in less gas diffusion resistance; a thicker boundary layer in the peripheral region leads to the accumulation of reaction byproducts and slow precursor gas renewal. This effect is significantly amplified when generating crystals 8 inches (200 mm) and larger. Therefore, this leads to: first, uneven spatial distribution of active groups (Si-, C-), resulting in different deposition rates in different regions; second, the accumulation of reaction byproducts (such as HCl) in stagnant regions inhibits the growth reaction of SiC, further reducing the growth rate in those regions; and third, the uneven flow field may cause the Si / C atomic ratio reaching the substrate surface at different locations to deviate from the ideal 1:1.

[0011] Therefore, this application utilizes a vertically distributed rotating structure and a mixing structure, further refining the rotating structure into parallel, vertically distributed upper and lower rotating arms to improve gas homogeneity through active flow field disturbance and optimized boundary layer control. The specific principles are as follows: First, the rotating arms cover a larger spatial volume, directly disturbing a wider range of gases. Second, the relative motion of the two parallel rotating arms generates strong shear flow in their gap region. This shear force effectively disperses the laminar gas flow, promoting vertical mixing of reactant gases and byproducts, and reducing stratification caused by gravity or thermal buoyancy (such as heavy gas sinking). Finally, the mixing structure is located at the lower end of the mixing structure, which is porous, uniformly dispersing the disturbed airflow (including shear flow and eddies) generated by the upper rotating arms into countless micron-sized streams, forming highly uniform laminar or micro-turbulent flow perpendicularly pointing towards the substrate surface, completely solving the "center-edge" flow pattern difference problem in traditional equipment.

[0012] As a further preferred embodiment of the present invention, the auxiliary structure includes a bottom plate for dividing the deposition chamber into an upper chamber and a lower chamber, the bottom plate being provided with channels for gas to pass through; the rotating structure and the mixing structure are both located in the upper chamber.

[0013] The channels can be vertically positioned. The base plate and oriented channels can reduce the velocity of the gas after passing through the mixing structure, and further disperse the gas into highly uniform laminar or micro-turbulent flow that is perpendicular to the substrate surface. Function one is to improve the radial uniformity of the gas and reduce deposition rate fluctuations at the edges of 8-inch and larger crystals; function two is that vertical airflow can reduce particle retention on the substrate surface and reduce crystal defects; function three is to suppress dislocation multiplication and improve crystal quality.

[0014] As a further preferred embodiment of the present invention, the auxiliary structure further includes a side plate disposed on the inner wall of the upper chamber, and a heating cavity for installing the heating module is disposed within the side plate.

[0015] Typically, chemical vapor deposition equipment uses a resistance / induction heating base to further heat the gas via radiation / conduction. The main limitation of this method is the poor temperature uniformity.

[0016] By setting up a heating chamber inside the side plate, the side wall heating function can be increased. It is mainly used to heat the gas at the rotating structure. The purpose is twofold: first, to accurately compensate for the temperature loss of the edge heat area caused by the rotation of the rotating arm; and second, to suppress the rise of high-temperature gas and avoid the vertical temperature stratification phenomenon, which is particularly important for the complete pyrolysis of precursors such as silanes.

[0017] As a further preferred embodiment of the present invention, the heating cavity includes a first heating cavity and a second heating cavity that are distributed vertically.

[0018] The first and second heating chambers can be optionally independent of each other. The first heating chamber corresponds to the area at the upper rotating arm, and the second heating chamber corresponds to the area at the lower rotating arm. Each heating chamber contains its own heating module. Further optimization is possible, where the power of the heating module in the second heating chamber can be greater than that in the first heating chamber. This establishes a reverse temperature gradient, further suppressing the downward flow of cold air and preventing localized quenching caused by cold air impact.

[0019] As a further preferred embodiment of the present invention, the auxiliary structure further includes a top plate disposed on the inner top wall of the upper chamber.

[0020] The top plate, bottom plate, and side plates are heat insulation panels, which are interconnected to form the upper chamber. The heat insulation panels can be made of materials such as graphite plates, C / SiC composite materials, multilayer molybdenum reflective screens, HfB2-SiC coated substrates, and nano-aerogel composite panels.

[0021] As a further preferred embodiment of the present invention, the flow guiding device further includes a flow guiding structure disposed at the upper end of the upper rotating arm or the upper end of the lower rotating arm, the flow guiding structure including a flow guiding plate near the inner wall of the deposition cavity; the flow guiding plate has a fixed end near the upper rotating arm or the lower rotating arm and a free end away from the upper rotating arm or the lower rotating arm, the distance between the fixed end and the inner wall of the deposition cavity is greater than the distance between the free end and the inner wall of the deposition cavity.

[0022] The guide plate is designed to enhance gas uniformity in the vertical direction and to specifically improve gas flow in the area between the rotating arm and the inner wall. More preferably, at least one guide plate has its fixed end connected to the end of the rotating arm near the inner wall of the deposition chamber. This arrangement allows the guide plate to rotate synchronously with the upper rotating arm, thereby efficiently removing byproducts (such as HCl) and depleted gas deposited near the edge, and improving the gas renewal rate and active group concentration in the edge region.

[0023] As a further preferred embodiment of the present invention, the drainage plate is an annular plate coaxially arranged with the upper rotating arm or the lower rotating arm.

[0024] The rotating ring can actively generate strong vortices / turbulence in the edge region, thus producing eddies. These eddies strongly entrain fresh gas from the central region, significantly increasing the gas renewal rate and active group concentration in the edge region. Further preferably, when the ring is connected to the upper rotating arm, the thickness at the fixed end of the ring gradually decreases towards the free end. This results in lower rotational inertia at the free end and higher inertia at the fixed end. The free end with lower inertia is more easily accelerated / responsive and more sensitive to lighter / faster airflow disturbances from above, facilitating the mixing of gas near the inlet; the eddies generated at the fixed end with higher inertia have greater angular momentum and penetration depth, thinning or disrupting stagnant boundary layers and accelerating downward gas diffusion. This configuration also helps improve the ring's rigidity and resistance to deformation at high temperatures.

[0025] As a further preferred embodiment of the present invention, both the upper rotating arm and the lower rotating arm include a disc body, the center of the disc body is connected to the rotating shaft, and the disc body is provided with a through hole penetrating the disc body.

[0026] The structure of the disc helps maintain the stability of the rotating arm under high-speed rotation, while the through holes are used to increase the gas flow rate. To ensure gas uniformity, there are multiple through holes distributed at equal intervals.

[0027] The present invention also provides a chemical vapor deposition apparatus having the deposition chamber, wherein any of the above-mentioned flow guiding devices are disposed within the deposition chamber, and a base is disposed within the deposition chamber.

[0028] As a further preferred embodiment of the present invention, it further includes an air inlet communicating with the upper end of the deposition cavity and an air outlet communicating with the lower end of the deposition cavity.

[0029] The beneficial effects of this invention are as follows:

[0030] This invention, through the design of a rotating and mixing structure, not only enhances the gas flow velocity and promotes the uniformity of gas distribution in the horizontal direction at the inlet, but also directionally disperses the gas into countless micron-sized streams, forming highly uniform laminar or micro-turbulent flow perpendicular to the substrate surface, thus completely solving the "center-edge" flow pattern difference problem in traditional equipment. It eliminates the adverse effects of the arrangement of the inlet and outlet on the uniformity of gas distribution within the deposition chamber.

[0031] By designing an auxiliary structure, this invention can accurately compensate for the temperature loss in the edge heat loss area caused by the rotation of the rotating arm; it can also suppress the rising of high-temperature gas and the sinking of cold air, avoiding the vertical temperature stratification phenomenon and the phenomenon of local quenching caused by the impact of cold airflow.

[0032] The present invention further promotes the uniformity of gas distribution by setting the flow-guiding structure, which helps to improve the crystal crystallization quality. Attached Figure Description

[0033] Appendix Figure 1 This is a schematic diagram of the flow guiding device of the present invention.

[0034] Appendix Figure 2 This is a schematic diagram of one structure of the disk body of the present invention.

[0035] Appendix Figure 3 This is a schematic diagram of another structure of the disk body of the present invention.

[0036] Appendix Figure 4 This is a schematic diagram of the internal structure of the chemical deposition equipment of the present invention.

[0037] Figure description: Heating module a, deposition chamber 11, base 12, air inlet 13, air outlet 14;

[0038] Upper chamber 111, lower chamber 112;

[0039] Rotation structure 200, mixing structure 300, auxiliary structure 400, drainage structure 500;

[0040] Rotating shaft 210, upper rotating arm 220, lower rotating arm 230, disc body 240;

[0041] Through hole 241;

[0042] Bottom plate 410, side plates 420, top plate 430;

[0043] Channel 411;

[0044] Heating chamber 421, first heating chamber 421-1, second heating chamber 421-2, third heating chamber 421-3;

[0045] Drainage plate 510, fixed end 511, free end 512. Detailed Implementation

[0046] In the description of this invention, it should be understood that the terms "upper," "lower," "inner," "outer," "left," "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use, or the orientation or positional relationship commonly understood by those skilled in the art. They are only used to facilitate the description of this invention and to simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0047] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, terms such as "set" and "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0048] The flow guiding device provided by this invention is mainly used in chemical vapor deposition (CVD) equipment. CVD equipment is a commonly used device in this field, generally including a vacuum system, a gas delivery system, and a reactor body, etc. (See attached diagram). Figure 4 The reactor body contains a base support device and a base 12, which is used to place the silicon carbide substrate. During the vapor deposition process, gas flows into the reactor through the gas inlet 13 and flows out of the reactor through the gas outlet 14. The gas inlet 13 is generally located at the upper end, and the gas outlet 14 is located at the lower end. The base 12 rotates with the base support device to improve the uniformity of thin film deposition.

[0049] The main purpose of the structural improvement of the flow guiding device in this invention is to improve the uniformity of gas distribution, thereby forming uniform large-size (greater than or equal to 8 inches) silicon carbide crystals.

[0050] Example 1

[0051] Reference Appendix Figure 1As shown, the specific structure is as follows: a flow guiding device is installed in a sealed deposition chamber 11; the flow guiding device includes a rotating structure 200 and a mixing structure 300 disposed at the lower end of the rotating structure 200; the rotating structure 200 includes a rotating shaft 210, and an upper rotating arm 220 and a lower rotating arm 230 installed on the rotating shaft 210, which are parallel to each other and distributed vertically; the mixing structure 300 has a gas channel.

[0052] The flow guiding device is installed at the upper end of the deposition chamber 11. A rotating shaft 210 extends out of the deposition chamber 11 and is used to connect to an external drive motor, which can be a commonly used stepper motor, servo motor, etc. The upper rotating arm 220 and the lower rotating arm 230 rotate coaxially and do not contact the inner wall of the deposition chamber 11. Their structures can be the same or different; specific structures are shown in the attached figure. Figure 2 and attached Figure 3 As shown, both include a disc body 240, the center of which is connected to the rotating shaft 210. The disc body 240 has a through hole 241 penetrating it. The through hole 241 can be a through hole, a spoke gap, or an annular groove. To ensure gas uniformity, the number of through holes 241 should be the same. When the through hole is an annular groove, the relationship between the width L1 of the annular groove and the radius R of the disc body 240 can be: L1 / R > 50%. When the through hole is a spoke gap, the relationship between the width L2 of the spoke gap and the width L3 of the interval between two adjacent spoke gaps can be: L2 = 2 * L3.

[0053] The mixing structure 300 can employ a porous structure, such as commonly used materials like metal foam, porous ceramics, and precision drilled plates. High-temperature resistant materials (>1000℃) are preferred. The porous structure acts similarly to a physical rectifier, forcing the turbulent airflow (including shear flow and eddies) generated by the upper rotating arm to be uniformly dispersed into countless micron-sized flow streams. Regardless of whether there are radial velocity / concentration differences in the original upper airflow, after permeation through the porous medium, a highly uniform laminar or micro-turbulent flow is formed at the outlet surface, perpendicularly pointing towards the substrate surface, completely resolving the "center-edge" flow pattern difference problem in traditional equipment.

[0054] More preferably, the mixing structure 300 is provided with a mounting cavity for mounting the heating module a, or the mixing structure 300 itself is heated by embedding a resistance wire or adding an induction heating coating. This is because the porous structure itself has a large heat capacity and heat conduction path. If it is not heated, it will become an endothermic body, causing the temperature of the area below it to be lower than the design value (forming a "cold spot"). Compensation heating can ensure that the temperature of the mixing structure itself is consistent with the set temperature of the reaction zone, avoiding the temperature gradient introduced by it. In addition, the temperature at the mixing structure 300 can be independently controlled. Controlling it within a reasonable range where the temperature is higher than the temperature of the area below can further promote the accelerated migration of gas-phase growth groups to the substrate, further enhancing the transport efficiency. Further controlling the temperature at the mixing structure 300 within a reasonable range that is slightly lower than the temperature at the rotating structure 200 and higher than the by-product condensation temperature can ensure that the gas remains stable during the penetration of the pores, which helps to reduce particulate contamination caused by gas-phase nucleation.

[0055] Example 2

[0056] This embodiment further enhances the uniformity of gas distribution based on Embodiment 1. The specific structure is shown in the attached figure. Figure 1 and attached Figure 4 As shown, the flow guiding device also includes a flow guiding structure 500 disposed at the upper end of the upper rotating arm 220 or the upper end of the lower rotating arm 230. The flow guiding structure 500 includes a flow guiding plate 510 near the inner wall of the deposition chamber 11. The flow guiding plate 510 has a fixed end 511 near the upper rotating arm 220 or the lower rotating arm 230 and a free end 512 away from the upper rotating arm 220 or the lower rotating arm 230. The distance between the fixed end 511 and the inner wall of the deposition chamber 11 is greater than the distance between the free end 512 and the inner wall of the deposition chamber 11.

[0057] The diversion plate 510 can be fixedly installed inside the deposition chamber 11 or directly installed on the upper rotating arm 220 and the lower rotating arm 230. Regardless of the installation method and position, the diversion plate 510 does not contact the inner wall of the deposition chamber 11.

[0058] To improve gas flow in the edge region, at least one guide plate 510 is provided with its fixed end connected to the end of the rotating arm near the inner wall of the deposition chamber. This arrangement allows the guide plate 510 to rotate synchronously with the upper rotating arm 220, thereby efficiently removing byproducts and depleted gas deposited near the edge, and improving the gas renewal rate and active group concentration in the edge region.

[0059] The guide plate 510 mounted on the upper rotating arm 220 is an annular plate coaxially arranged with the upper rotating arm 220, and the material can also be the same. The thickness of the annular plate gradually decreases from the fixed end to the free end. Specifically, the relationship between the thickness t1 of the fixed end and the thickness t2 of the free end is: t1 > 2 * t2. This results in a smaller rotational inertia at the free end and a larger inertia at the fixed end. The free end with smaller inertia is easier to accelerate / respond and is more sensitive to the lighter / faster airflow disturbances at the top, which helps to mix the gas at the upper end of the rotating structure 200; the vortex generated at the fixed end with larger inertia has greater angular momentum and penetration depth, thinning or breaking the stagnant boundary layer and accelerating the downward diffusion of gas. Moreover, this arrangement also helps to improve the rigidity and deformation resistance of the ring at high temperatures.

[0060] Example 3

[0061] This embodiment further enhances the uniformity of temperature distribution based on Embodiment 1 or Embodiment 2. The specific structure is shown in the attached figure. Figure 1 and attached Figure 4 As shown, it also includes an auxiliary structure 400, which includes a base plate 410 for dividing the deposition chamber 11 into an upper chamber 111 and a lower chamber 112. The base plate 410 is provided with a channel 411 for gas to pass through. The rotating structure 200 and the mixing structure 300 are both located in the upper chamber 111. The diameter of the channel 411 near the lower chamber 112 is larger than the diameter near the upper chamber 111. This arrangement helps to increase the downward flow velocity of the gas.

[0062] More preferably, the auxiliary structure 400 further includes a side plate 420 disposed on the inner wall of the upper chamber 111, and a heating cavity 421 for mounting the heating module a is disposed within the side plate 420. The heating cavity 421 includes a first heating cavity 421-1 and a second heating cavity 421-2 distributed vertically.

[0063] The side plate 420 should also be provided with an air intake channel for communication with the air inlet 13. The heating chamber 421 is not connected to the upper chamber 111 and is mainly used to protect the heating module a installed therein. The heating module a mainly heats the gas in the upper chamber 111 by radiation, and its structure can adopt commonly used equipment on the market, such as heating equipment with resistance wire.

[0064] The reasons for setting up independent first heating chamber 421-1 and second heating chamber 421-2 have been explained above, so they will not be described again.

[0065] Considering that it is not easy to embed a heating module a in porous materials (affecting the number of pores, and the heating module a being directly placed would be difficult to withstand high temperatures), a third heating chamber 421-3 located at the side end of the mixing structure 300 can be set inside the side plate 420 to heat the mixing structure 300. The mixing structure 300 can be directly mounted on the side plate 420.

[0066] Furthermore, the auxiliary structure 400 also includes a top plate 430 disposed on the inner top wall of the upper chamber 111. The top plate 430, bottom plate 410, and side plate 420 are heat insulation plates. The top plate 430 and bottom plate 410 are generally circular, while the side plate 420 is an annular plate. The three are sealed together or integrally formed to fit the inner wall of the chemical vapor deposition equipment, quickly dividing the sealed cavity 11 into the upper chamber 111 and the lower chamber 112. At this time, the mixing structure 300 should be a cylindrical structure, with the outer wall of the cylinder connected to the inner wall of the side plate 420. To resist high temperatures, the heat insulation plate material can be selected from materials such as isostatic graphite, C / SiC composite materials, multilayer molybdenum reflective screens, HfB2-SiC coated substrates, and nano-aerogel composite materials. The above materials are all from existing material selections, so they will not be described in detail.

[0067] The auxiliary structure 400 proposed in this embodiment can be manufactured independently and its size can be customized according to the dimensions of the sealed cavity 11 of the chemical vapor deposition equipment. During installation, it can be directly built into the existing chemical vapor deposition equipment. Compared with directly modifying the internal structure of the chemical vapor deposition equipment, it greatly reduces the difficulty of modification, helps control costs, and has the advantages of strong practicality and high usability.

[0068] Other components or operations involved in the apparatus for silicon carbide chemical vapor deposition according to embodiments of the present invention, such as induction heating and substrate rotation control methods, are known to those skilled in the art and will not be described in detail here.

[0069] The specific embodiments described herein are merely illustrative of the spirit of the invention. Those skilled in the art to which this invention pertains may make various modifications or additions to the described specific embodiments or use similar methods to substitute them, without departing from the spirit of the invention or exceeding the scope defined by the appended claims.

Claims

1. A flow guiding device, installed in a closed deposition chamber (11); characterized in that: The flow guiding device includes a rotating structure (200), a mixing structure (300) and an auxiliary structure (400) disposed at the lower end of the rotating structure (200). The rotating structure (200) includes a rotating shaft (210), an upper rotating arm (220) and a lower rotating arm (230) mounted on the rotating shaft (210), which are parallel to each other and distributed vertically. The mixing structure (300) has gas channels; The auxiliary structure (400) includes a base plate (410) for dividing the deposition chamber (11) into an upper chamber (111) and a lower chamber (112), and a side plate (420) disposed on the inner wall of the upper chamber (111); the base plate (410) is provided with a channel (411) for gas to pass through. The rotating structure (200) and the mixing structure (300) are both located in the upper chamber (111); a heating cavity (421) for installing the heating module (a) is provided in the side plate (420). The heating cavity (421) includes a first heating cavity (421-1) and a second heating cavity (421-2) arranged vertically and each housing a heating module (a). The first heating cavity (421-1) corresponds to the area at the upper rotating arm (220), and the second heating cavity (421-2) corresponds to the area at the lower rotating arm (230). The power of the heating module (a) in the second heating cavity (421-2) is greater than the power of the heating module (a) in the first heating cavity (421-1). The mixing structure (300) is provided with a mounting cavity for mounting the heating module (a).

2. A flow directing device according to claim 1, wherein: The auxiliary structure (400) also includes a top plate (430) disposed on the inner top wall of the upper chamber (111).

3. The flow guiding device according to claim 1, characterized in that: The flow guiding device further includes a flow guiding structure (500) disposed at the upper end of the upper rotating arm (220) or the upper end of the lower rotating arm (230). The flow guiding structure (500) includes a flow guiding plate (510) near the inner wall of the deposition cavity (11). The flow guiding plate (510) has a fixed end (511) near the upper rotating arm (220) or the lower rotating arm (230) and a free end (512) away from the upper rotating arm (220) or the lower rotating arm (230). The distance between the fixed end (511) and the inner wall of the deposition cavity (11) is greater than the distance between the free end (512) and the inner wall of the deposition cavity (11).

4. A flow guiding device according to claim 3, characterized in that: The drainage plate (510) is an annular plate coaxially arranged with the upper rotating arm (220) or the lower rotating arm (230).

5. A flow guiding device according to claim 1, characterized in that: The upper rotating arm (220) and the lower rotating arm (230) both include a disc body (240), the center of the disc body (240) is connected to the rotating shaft (210), and the disc body (240) is provided with a through hole (241) penetrating the disc body (240).

6. A chemical vapor deposition apparatus having the deposition chamber (11), wherein the deposition chamber (11) is provided with a flow guiding device as described in any one of claims 1 to 5.

7. A chemical vapor deposition apparatus according to claim 6, characterized in that: It also includes an air inlet (13) connected to the upper end of the deposition chamber (11) and an air outlet (14) connected to the lower end of the deposition chamber (11).

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