Fault detection method and system for energy storage cabinet

Abstract

The invention relates to a fault detection method and system for an energy storage cabinet. The method comprises determining the fault position of the energy storage cabinet based on the operation state of the energy storage cabinet. Based on the fault position of the energy storage cabinet, prompt information corresponding to a fault detection circuit is obtained, the fault detection circuit is magnetically attracted to a cabinet door of the energy storage cabinet, the fault detection circuit is provided with at least two pins, and each pin is connected to a circuit corresponding to the fault position of the energy storage cabinet. The fault detection convenience of the energy storage cabinet is improved by using the characteristics of small size, portability and simplicity in fixation of the fault detection circuit. And the fault detection result of the energy storage cabinet is determined based on the circuit position corresponding to the fault position where each pin is connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit, so that the accuracy of the fault detection result is guaranteed by combining the prompt information fed back by the fault detection circuit in real time. And thus, safe and convenient troubleshooting of the energy storage cabinet is realized.

Description

TECHNICAL FIELD

[0001] The embodiment of the present specification belongs to the technical field of energy storage product debugging, and particularly relates to a fault detection method and system for an energy storage cabinet. BACKGROUND

[0002] An energy storage product generally refers to a comprehensive device integrated with a power supply system, a battery management system (BMS), an energy conversion system (PCS), a display control system, a temperature control system, and a safety protection system, and plays a vital role in a modern energy system. With the continuous introduction of energy storage products, energy storage systems are becoming more and more complex, especially large energy storage devices such as energy storage cabinets, which have more and more built-in electrical components and more and more complex control logic.

[0003] Affected by the increasing number of electrical components, the placement positions of the electrical components in the energy storage cabinet are increasingly dense, which brings great challenges to the debugging and fault detection of the energy storage cabinet. The commonly used fault detection method for the energy storage cabinet is to use a multimeter. However, due to the defects of the multimeter such as large structure and insufficient functions, there are problems such as complex use and influence on detection accuracy in the fault detection process of the energy storage cabinet, and even the connected circuit may be damaged. SUMMARY

[0004] Embodiments of the present disclosure provide a fault detection method and system for an energy storage cabinet.

[0005] In a first aspect of the present disclosure, a fault detection method for an energy storage cabinet is provided. The method includes determining a fault position of the energy storage cabinet based on an operating state of the energy storage cabinet. The method further includes obtaining prompt information corresponding to a fault detection circuit based on the fault position of the energy storage cabinet; the fault detection circuit is magnetically attracted to a cabinet door of the energy storage cabinet, and the fault detection circuit has at least two pins, each pin being connected to a circuit corresponding to the fault position of the energy storage cabinet. In addition, the method further includes determining a fault detection result of the energy storage cabinet based on the position of the circuit to which each pin is connected and the prompt information corresponding to the fault detection circuit.

[0006] In a second aspect of the present disclosure, a fault detection system for an energy storage cabinet is provided. The system includes a position determination module configured to determine a fault position of the energy storage cabinet based on an operating state of the energy storage cabinet. The system further includes an information acquisition module configured to obtain prompt information corresponding to a fault detection circuit based on the fault position of the energy storage cabinet; the fault detection circuit is magnetically attracted to a cabinet door of the energy storage cabinet, and the fault detection circuit has at least two pins, each pin being connected to a circuit corresponding to the fault position of the energy storage cabinet. In addition, the system further includes a result determination module configured to determine a fault detection result of the energy storage cabinet based on the position of the circuit to which each pin is connected and the prompt information corresponding to the fault detection circuit.

[0007] In a third aspect of the present disclosure, a computer program product is provided, comprising a computer program which is executed by a processor to implement the method according to the first aspect.

[0008] In a fourth aspect of the present disclosure, a machine readable storage medium is provided. The machine readable storage medium has stored thereon machine executable instructions, wherein the machine executable instructions are executed by a processor to implement the method provided by the first aspect of the present disclosure.

[0009] It is to be understood that the description in the summary section is not intended to identify key or essential features of embodiments of the present disclosure or to limit the scope of the present disclosure. Other features, aspects, and advantages of the present disclosure will become apparent from the following description, which is given by way of example only to provide a comprehensive disclosure of the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0010] The above and other features, aspects, and advantages of various embodiments of the present disclosure will become more apparent from the following detailed description, taken in conjunction with the accompanying drawings, in which like reference numerals denote like elements, and wherein: Figure 1 a schematic diagram illustrating an example environment in which some embodiments of the present disclosure can be implemented; Figure 2 a flowchart illustrating a fault detection method for an energy storage cabinet according to some embodiments of the present disclosure; Figure 3 a structural schematic diagram of a fault detection circuit according to some embodiments of the present disclosure; Figure 4 a structural schematic diagram of another fault detection circuit according to some embodiments of the present disclosure; Figure 5 a block diagram of a fault detection system for an energy storage cabinet according to some embodiments of the present disclosure; and Figure 6 a block diagram of an electronic device in which a plurality of embodiments of the present disclosure can be implemented. DETAILED DESCRIPTION

[0011] For the purpose of clarity, technical solutions in the embodiments of the present application will be clearly and completely described in the description of the present application with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0012] The terms "comprise(s)," "include(s)," "comprising," "including," "have(s)," "including," "has," "have," and "having," as well as any variations thereof, in the Specification and in the claims are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or apparatus that comprises a list of steps or elements is not necessarily limited to those listed steps or elements but can include other not-listed steps or elements, as well. The term "if' as used in this document is equivalent to "when," "upon," "in response to determining," or "in response to detecting," as appropriate, depending on the context.

[0013] As described above, the current common fault detection method for the energy storage cabinet is to use a multimeter. However, due to the large structure of the multimeter, it is inconvenient to place and fix the multimeter when detecting the fault of the energy storage cabinet, and thus there are problems of complex use and influence on the fault detection efficiency. In addition, the detection function of the multimeter is also defective, for example, it cannot feedback in time when detecting the circuit action signal, and for example, it cannot effectively detect the action signal of the transient circuit. Moreover, the multimeter needs to be used as a part of the circuit, which is easy to cause damage to the connection circuit due to the introduction of load effect, misoperation or static overvoltage, and thus seriously affects the use of the energy storage cabinet.

[0014] Therefore, an embodiment of the present disclosure proposes a fault detection method for an energy storage cabinet. The method comprises determining a fault position of the energy storage cabinet based on an operating state of the energy storage cabinet. The method further comprises obtaining prompt information corresponding to a fault detection circuit based on the fault position of the energy storage cabinet. The fault detection circuit is magnetically attracted to a cabinet door of the energy storage cabinet, and the fault detection circuit has at least two pins, each pin being connected to a circuit corresponding to the fault position of the energy storage cabinet. In addition, the method further comprises determining a fault detection result of the energy storage cabinet based on the position of the circuit to which each pin is connected and the prompt information corresponding to the fault detection circuit.

[0015] In this way, the fault position of the energy storage cabinet corresponding to the circuit can be detected based on the fault detection circuit, so as to improve the convenience of the fault detection of the energy storage cabinet by using the small and light characteristics and the simple fixing of the fault detection circuit. In addition, the fault detection result of the energy storage cabinet is determined based on the position of the circuit to which each pin is connected and the prompt information corresponding to the fault detection circuit, so as to ensure the accuracy of the fault detection result by combining the prompt information fed back by the fault detection circuit in real time, and thus to realize the safe and convenient troubleshooting of the energy storage cabinet.

[0016] Figure 1 A schematic diagram showing an example environment in which some embodiments of the present disclosure can be implemented is shown. As Figure 1As shown, the example environment 100 can include an assembled and debugged energy storage cabinet 101, which is provided with a power supply system, a battery management system (BMS), an energy conversion system (PCS), a display control system, a temperature control system, and a safety protection system, and the like corresponding line structures, which can send control signals to the line structures corresponding to each system in the fault detection stage, to determine whether the running state of the corresponding system is abnormal in combination with the feedback signals corresponding to each line structure. In an example, when the feedback signal of the line structure corresponding to the display control system is a low-level signal, it indicates that the running state of the display control system is abnormal, and the fault reason can be that the display control system itself has a fault or the power supply end of the display control system has a fault; when the feedback signal of the line structure corresponding to the temperature control system is a low-level signal, it indicates that the running state of the temperature control system is abnormal, and the fault reason can be that the temperature control system itself has a fault or the power supply end of the temperature control system has a fault; when the bus feedback voltage of the line structure corresponding to the power supply system is a high-voltage signal, it indicates that the running state of the power supply system is abnormal, and the fault reason can be that the bus of the power supply system has an overvoltage fault, a transient voltage fault, or a reverse connection fault.

[0017] It can be understood that the line structures corresponding to the power supply system, the battery management system (BMS), the energy conversion system (PCS), the display control system, the temperature control system, and the safety protection system of some embodiments of the present disclosure are well known in the art, for example, the display control system can be a line structure composed of a display screen, a touch screen, a microprocessor, and a communication interface, but more details are not described here.

[0018] The example environment 100 can also include a processing terminal 102, which can establish a communication connection with the energy storage cabinet 101, for obtaining the feedback signals of the line structures corresponding to each system received by the energy storage cabinet in the fault detection stage, to determine the fault position of the energy storage cabinet by taking the feedback signals of the line structures corresponding to each system as the running state of the energy storage cabinet. Here, the fault position of the energy storage cabinet can be one or more of the power supply system, the display control system, the temperature control system, the battery management system, the energy conversion system, and the safety protection system.

[0019] In addition, the processing terminal 102 can also control each pin of the fault detection circuit to access the circuit corresponding to the fault position after determining the fault position of the energy storage cabinet, so as to obtain the prompt information corresponding to the fault detection circuit. Here, the fault detection circuit can include at least two pins, and the circuit position to which each pin accesses can be determined based on a preset pin position-fault position correspondence relationship, which can be obtained by a tester analyzing historical fault detection records, and the preset pin position-fault position correspondence relationship includes a plurality of fault positions and a plurality of pin positions corresponding to each fault position. In an example, when the fault position is the display control system, the first pin position of the fault detection circuit can access the positive electrode of the power supply end of the energy storage cabinet (i.e. the positive electrode output end of the power supply system) and the second pin position can access the negative electrode of the power supply end of the energy storage cabinet (i.e. the negative electrode output end of the power supply system) through the preset pin position-fault position correspondence relationship. The third pin position can access the positive electrode of the power input of the display control system, and the fourth pin position can access the negative electrode of the power input of the display control system. The prompt information corresponding to the fault detection circuit can be understood as the prompt state presented by the working state of the buzzer and the working state of the light-emitting diode of the fault detection circuit, for example, when the buzzer is in the working state and the light-emitting diode is in the working state, the prompt information can be a light-emitting buzzer.

[0020] It can be understood that the way in which the processing terminal 102 controls each pin of the fault detection circuit to access the circuit corresponding to the fault position can be that the processing terminal 102 feeds back each pin position of the fault detection circuit to the tester, so that the tester can magnetically attract the fault detection circuit to the door of the energy storage cabinet (of course, it can also be hung and fixed by a hook, without being limited thereto), and access each pin of the fault detection circuit to the corresponding position. Of course, the processing terminal of some embodiments of the present disclosure can also control each pin of the fault detection circuit to access the circuit corresponding to the fault position through a preset automatic control program and a mechanical arm control technology, so as to realize full automation of fault detection, but more details are not described here.

[0021] In addition, the processing terminal 102 can also determine the fault detection result of the energy storage cabinet based on the circuit position to which each pin accesses and the prompt information corresponding to the fault detection circuit, and feed back the fault detection result of the energy storage cabinet to the tester in real time, so as to facilitate the tester to timely troubleshoot and process.

[0022] In this way, the circuit corresponding to the fault position of the energy storage cabinet can be detected based on the fault detection circuit, so as to improve the convenience of the fault detection of the energy storage cabinet by using the small and light characteristics and the simple fixing of the fault detection circuit; and the fault detection result of the energy storage cabinet is determined based on the prompt information corresponding to the fault detection circuit and the circuit position to which each pin is connected to the fault position, so as to ensure the accuracy of the fault detection result by combining the prompt information fed back by the fault detection circuit, and then the safe and convenient troubleshooting of the abnormality of the energy storage cabinet is realized.

[0023] The processing terminal 102 involved in some embodiments of the present disclosure can be a smart phone, a tablet computer, a desktop computer, a laptop computer, a notebook computer, an Ultra-mobile Personal Computer (UMPC), a handheld computer, a PC device, a Personal Digital Assistant (PDA), a routing device, a virtual reality device, etc., and of course can also be a hardware server, a virtual server, a cloud server, a routing device, a gateway device, etc.

[0024] It should be understood that the architecture and functions in the example environment 100 are described for the purpose of illustration only, and do not imply any limitation on the scope of the present disclosure. Embodiments of the present disclosure can also be applied to other environments with different structures and / or functions.

[0025] Figure 2 A flowchart of a fault detection method for an energy storage cabinet according to some embodiments of the present disclosure is shown. The method 200 may, for example, be performed by a processing terminal in the example environment shown. Figure 1 As shown in the example environment, the processing terminal can be a smart phone, a tablet computer, a desktop computer, a laptop computer, a notebook computer, an Ultra-mobile Personal Computer (UMPC), a handheld computer, a PC device, a Personal Digital Assistant (PDA), a routing device, a virtual reality device, etc., and of course can also be a hardware server, a virtual server, a cloud server, a routing device, a gateway device, etc. Figure 2 As shown in the example environment, the processing terminal can be a smart phone, a tablet computer, a desktop computer, a laptop computer, a notebook computer, an Ultra-mobile Personal Computer (UMPC), a handheld computer, a PC device, a Personal Digital Assistant (PDA), a routing device, a virtual reality device, etc., and of course can also be a hardware server, a virtual server, a cloud server, a routing device, a gateway device, etc. Figure 1The energy storage cabinet in the example environment shown receives feedback signals of the line structures corresponding to each system in the fault detection stage. The system can be one or more of a power supply system, a battery management system (BMS), a power conversion system (PCS), a display control system, a temperature control system, and a safety protection system. The fault location of the energy storage cabinet can also be one or more of the power supply system, the battery management system (BMS), the power conversion system (PCS), the display control system, the temperature control system, and the safety protection system. In some embodiments, after obtaining the operating state of the energy storage cabinet, the processing terminal can determine the fault location of the energy storage cabinet in combination with the feedback signals of the line structures corresponding to each system in the normal operating state. For example, when a large difference is detected between the feedback signal of the line structure corresponding to the display control system in the operating state of the energy storage cabinet and the feedback signal of the line structure corresponding to the display control system in the normal operating state (i.e., the feedback signal of the line structure corresponding to the display control system in the operating state of the energy storage cabinet is a low-level signal, and the feedback signal of the line structure corresponding to the display control system in the normal operating state is a high-level signal), it can be determined that the fault location of the energy storage cabinet is the display control system.

[0026] At block 204, the method 200 can obtain prompt information corresponding to the fault detection circuit based on the fault location of the energy storage cabinet. In some embodiments, after determining the fault location of the energy storage cabinet, the processing terminal can query the corresponding pin locations of each pin location in the preset pin location-fault location correspondence relationship corresponding to the fault location of the energy storage cabinet, and feed back the pin locations to the test personnel. The test personnel can magnetically attract the fault detection circuit to the cabinet door of the energy storage cabinet (of course, it can also be hung and fixed by a hook, which is not limited thereto), and connect each pin to the circuit corresponding to the fault location of the energy storage cabinet. In an example, when the fault location of the energy storage cabinet is the display control system, it can be determined that the first pin location of the fault detection circuit can be connected to the positive electrode of the power supply end of the energy storage cabinet (i.e., the positive electrode output end of the power supply system), the second pin location can be connected to the negative electrode of the power supply end of the energy storage cabinet (i.e., the negative electrode output end of the power supply system), the third pin location can be connected to the positive electrode of the power input of the display control system, and the fourth pin location can be connected to the negative electrode of the power input of the display control system. When the fault location of the energy storage cabinet is the power supply system, it can be determined that the first pin location of the fault detection circuit can be connected to the positive bus of the power supply system, the second pin location can be connected to the negative bus of the power supply system, the third pin location and the fourth pin location can be connected to an oscilloscope (which can be arranged in the energy storage cabinet and used to record the voltages output by the third pin and the fourth pin). When the fault location of the energy storage cabinet is the temperature control system, it can be determined that the first pin location can be connected to the positive electrode of the power input of the temperature control system, the second pin location can be connected to the negative electrode of the power input of the temperature control system, the third pin location and the fourth pin location can be connected to the oscilloscope.

[0027] Subsequently, the processing terminal can acquire the corresponding prompt information from the fault detection circuit through the set sensors. Here, the fault detection circuit is equipped with a buzzer and an LED. The prompt information corresponding to this fault detection circuit can be understood as the prompt status presented by the working state of the buzzer and the LED (i.e., dual sound and light indication). For example, when both the buzzer and the LED are working, the prompt information can correspond to a light-on beeping. The set image sensor and sound sensor can respectively collect the light-on image signal and the beeping sound signal and feed them back to the processing terminal, which then analyzes and processes the light-on image signal and the beeping sound signal to determine that the prompt information is a light-on beeping. It is understood that the methods used by the processing terminal in some embodiments of this disclosure to analyze and process the light-on image signal and the beeping sound signal are well-known techniques in the art, and will not be elaborated upon here.

[0028] Of course, the processing terminal can also determine the prompt information corresponding to the fault detection circuit by having the tester input the working status of the buzzer and the working status of the LED, and it is not limited to this.

[0029] In block 206, method 200 can determine the fault detection result of the energy storage cabinet based on the circuit position corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit. In some implementations, taking the fault location of the energy storage cabinet as the display and control system, and the circuit position corresponding to the fault location of the first pin connected to the energy storage cabinet as the positive terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the second pin connected to the energy storage cabinet as the negative terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the third pin connected to the energy storage cabinet as the positive terminal of the power input of the display and control system of the energy storage cabinet, and the circuit position corresponding to the fault location of the fourth pin connected to the energy storage cabinet as the negative terminal of the power input of the display and control system of the energy storage cabinet, the processing terminal can determine whether the prompt information corresponding to the fault detection circuit is an indicator light and a buzzer.

[0030] Understandably, when the fault detection circuit displays an indicator light and a buzzer, it indicates that the voltage at the circuit location connected to the first pin is greater than the voltage at the circuit location connected to the second pin, and the voltage at the circuit location connected to the first pin is less than the power supply voltage of the fault detection circuit. Therefore, the system can determine that the fault detection result of the energy storage cabinet is an abnormality in the display and control system itself, and this fault detection result is fed back to the test personnel in real time for troubleshooting. Conversely, when the fault detection circuit does not display an indicator light and a buzzer, it indicates that the voltage at both the circuit locations connected to the first and second pins is 0. Therefore, the system can determine that the fault detection result of the energy storage cabinet is an abnormality in the power supply end (i.e., the power system and the line where the power system outputs power to the display and control system), and this fault detection result is fed back to the test personnel in real time for troubleshooting. It should be noted that the power supply voltage of the fault detection circuit can be provided by the battery built into the fault detection circuit, for example, a 24V power supply voltage, to electrically isolate it from the energy storage cabinet and prevent interference or short circuit risks.

[0031] In some implementations, taking the fault location of the energy storage cabinet as an example of the display and control system, the fault detection circuit specifically includes a first operational amplifier, a first resistor, a first bipolar transistor, a second operational amplifier, a second bipolar transistor, a second resistor, a third bipolar transistor, a first field-effect transistor, a second field-effect transistor, a third resistor, a third field-effect transistor, a first buzzer, a green light-emitting diode, and a fourth resistor, wherein: The first input terminal of the first operational amplifier is connected to the first pin, the second input terminal of the first operational amplifier is connected to the second pin, the third input terminal of the first operational amplifier is connected to the power supply terminal, the first output terminal of the first operational amplifier is connected to one end of the first resistor, and the second output terminal of the first operational amplifier is connected to the ground terminal. The other end of the first resistor is connected to the base of the first bipolar transistor; The collector of the first bipolar transistor is connected to the power supply terminal, and the emitter of the first bipolar transistor is connected to the first input terminal of the second operational amplifier. The second input terminal of the second operational amplifier is connected to the first pin, the third input terminal of the second operational amplifier is connected to the power supply terminal, the first output terminal of the second operational amplifier is connected to the base of the second bipolar transistor, and the second output terminal of the second operational amplifier is connected to the ground terminal. The collector of the second bipolar transistor is connected to the power supply terminal, and the emitter of the second bipolar transistor is connected to one end of the second resistor. The other end of the second resistor is connected to the base of the third bipolar transistor; The collector of the third bipolar transistor is connected to the gate of the first field-effect transistor, one end of the third resistor, and the gate of the second field-effect transistor, respectively. The emitter of the third bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the positive terminal of the green light-emitting diode, respectively. The drain of the first field-effect transistor is connected to the first pin, and the source of the first field-effect transistor is connected to the source of the second field-effect transistor and the other end of the third resistor, respectively. The drain of the second field-effect transistor is connected to the third pin; The drain of the third field-effect transistor is connected to the second pin, and the source of the third field-effect transistor is connected to the fourth pin. The other end of the first buzzer is connected to the grounding terminal; The negative terminal of the green LED is connected to one end of the fourth resistor, and the other end of the fourth resistor is connected to the ground terminal.

[0032] Here, when the voltage at the circuit location where the first pin is connected is greater than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the first pin is connected is less than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a high-level signal, causing the base of the first bipolar transistor to receive a high-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the first input terminal of the second operational amplifier. Afterward, the first output terminal of the second operational amplifier outputs a high-level signal, causing the base of the second bipolar transistor to receive a high-level signal and turn on. Subsequently, the second bipolar transistor pulls down the gate voltage of the first field-effect transistor, causing the first field-effect transistor to turn on. Then, the drain voltage of the first field-effect transistor triggers the base of the third bipolar transistor, causing the third bipolar transistor to turn on. The third bipolar transistor pulls down the gate voltage of the second field-effect transistor, causing the second field-effect transistor to conduct. Then, the voltage at the circuit location connected to the first pin is output through the circuit location connected to the third pin (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the first pin). Next, the conduction of the third bipolar transistor causes the first buzzer and the green LED to operate, resulting in a green light and buzzer. Then, the conduction of the third bipolar transistor also triggers the gate of the third field-effect transistor, causing it to conduct and output the voltage at the circuit location connected to the second pin through the circuit location connected to the fourth pin (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the second pin).

[0033] In some embodiments of this disclosure, the first and second field-effect transistors are P-type field-effect transistors, the third field-effect transistor is an N-type field-effect transistor, and the first, second, and third bipolar transistors are all NPN bipolar transistors.

[0034] This circuit design structure not only avoids damage to the detection circuit structure, but also effectively acquires transient changes in the circuit signal, thereby ensuring the accuracy and reliability of the fault detection results.

[0035] In some implementations, the fault location of the energy storage cabinet is taken as the power system. The circuit position corresponding to the fault location of the energy storage cabinet is the positive bus of the power system, and the circuit position corresponding to the fault location of the energy storage cabinet is the negative bus of the power system. The third and fourth pin positions can be connected to an oscilloscope (which can be set inside the energy storage cabinet to record the voltage output by the third and fourth pins). For example, when the processing terminal detects that the prompt information corresponding to the fault detection circuit is a lit light (green light) and a beep (continuous long beep), it indicates that the power supply to the first pin is connected to the positive bus. If the voltage at the circuit location is greater than the voltage at the circuit location connected to the second pin, and the voltage at the circuit location connected to the first pin is greater than the power supply voltage of the fault detection circuit, it can be determined that the fault detection result of the energy storage cabinet is an abnormal positive voltage on the power system bus. When the prompt message corresponding to the fault detection circuit is a lit light (green light) and a buzzer (intermittent long beep), it can be determined that the fault detection result of the energy storage cabinet is a transient voltage on the positive bus of the power system. When the prompt message corresponding to the fault detection circuit is not a lit light and a buzzer, it can be determined that the fault detection result of the energy storage cabinet is a reverse connection between the positive and negative terminals of the power system bus.

[0036] Taking the fault location of the energy storage cabinet as the power system as an example, the fault detection circuit also includes a fourth bipolar transistor, a fifth resistor, a fifth bipolar transistor, a fourth field-effect transistor, a sixth resistor, and a fifth field-effect transistor, wherein: The emitter of the fourth bipolar transistor is connected to the first pin, the base of the fourth bipolar transistor is connected to the first output terminal of the second operational amplifier, and the collector of the fourth bipolar transistor is connected to one end of the fifth resistor. The other end of the fifth resistor is connected to the base of the fifth bipolar transistor; The emitter of the fifth bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the positive terminal of the green light-emitting diode, respectively. The collector of the fifth bipolar transistor is connected to the gate of the fourth field-effect transistor, one end of the sixth resistor, and the gate of the fifth field-effect transistor, respectively. The drain of the fourth field-effect transistor is connected to the first pin, and the source of the fourth field-effect transistor is connected to the other end of the sixth resistor and the source of the fifth field-effect transistor, respectively. The drain of the fifth field-effect transistor is connected to the third pin.

[0037] Here, when the voltage at the circuit location where the first pin is connected is greater than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the first pin is connected is greater than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a high-level signal, causing the base of the first bipolar transistor to receive a high-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the first input terminal of the second operational amplifier. Afterwards, the first output terminal of the second operational amplifier outputs a low-level signal, causing the base of the fourth bipolar transistor to receive a low-level signal and turn on. Subsequently, the fourth bipolar transistor pulls down the gate voltage of the fourth field-effect transistor, causing the fourth field-effect transistor to turn on. Then, the drain voltage of the fourth field-effect transistor triggers the base of the fifth bipolar transistor, causing the fifth bipolar transistor to turn on. The fifth bipolar transistor (BPT) then pulls down the gate voltage of the fifth field-effect transistor (FET), causing the FET to conduct. It then outputs the voltage at the circuit location connected to the first pin through the circuit location connected to the third pin (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the first pin). The conduction of the fifth BPT then activates the first buzzer and the green LED, resulting in a green light and buzzer. Furthermore, the conduction of the fifth BPT triggers the gate of the third FET, causing it to conduct and output the voltage at the circuit location connected to the second pin through the circuit location connected to the fourth pin (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the second pin).

[0038] In some embodiments of this disclosure, the fourth and fifth field-effect transistors are P-type field-effect transistors (and both are high-voltage field-effect transistors to avoid the risk of breakdown), the fourth bipolar transistor is a PNP type bipolar transistor, and the fifth bipolar transistor is an NPN type bipolar transistor.

[0039] See also: Figure 3 The diagram shows a structural schematic of a fault detection circuit according to some embodiments of the present disclosure. Figure 3As shown, 1 is the first pin, 2 is the second pin, 3 is the third pin, 4 is the fourth pin, V0 is the power supply voltage of the fault detection circuit, operational amplifier 1 is the first operational amplifier, operational amplifier 2 is the second operational amplifier, bipolar transistor T1 is the first bipolar transistor, bipolar transistor T2 is the second bipolar transistor, bipolar transistor T3 is the third bipolar transistor, bipolar transistor T4 is the fourth bipolar transistor, bipolar transistor T5 is the fifth bipolar transistor, R1 is the first resistor, R2 is the second resistor, R3 is the third resistor, R4 is the fourth resistor, R5 is the fifth resistor, R6 is the sixth resistor, field-effect transistor 1 is the first field-effect transistor, field-effect transistor 2 is the second field-effect transistor, field-effect transistor 3 is the third field-effect transistor, field-effect transistor 4 is the fourth field-effect transistor, field-effect transistor 5 is the fifth field-effect transistor, and buzzer 1 is the first buzzer.

[0040] In some implementations, taking the fault location of the energy storage cabinet as the temperature control system, the circuit position corresponding to the fault location of the energy storage cabinet as the positive power input of the temperature control system, the circuit position corresponding to the fault location of the energy storage cabinet as the negative power input of the temperature control system, and the third and fourth pin positions as possible to be connected to an oscilloscope (which can be set inside the energy storage cabinet to record the voltage output by the third and fourth pins), for example, when the processing terminal detects that the prompt information corresponding to the fault detection circuit is a lit red light and a buzzer, it indicates that the voltage at the circuit position connected to the first pin is less than the voltage at the circuit position connected to the second pin, and the voltage at the circuit position connected to the second pin is less than the power supply voltage of the fault detection circuit, and it can be determined that the fault detection result of the energy storage cabinet is that the power line of the temperature control system is reversed; when the prompt information corresponding to the fault detection circuit is a lit green light and a buzzer, it can be determined that the fault detection result of the energy storage cabinet is that the temperature control system itself is abnormal.

[0041] Taking the temperature control system as an example of the fault location in the energy storage cabinet, the fault detection circuit may also include a seventh resistor, a sixth bipolar transistor, a third operational amplifier, a seventh bipolar transistor, an eighth resistor, an eighth bipolar transistor, a sixth field-effect transistor, a seventh field-effect transistor, a ninth resistor, an eighth field-effect transistor, a second buzzer, a red light-emitting diode, and a tenth resistor, wherein: One end of the seventh resistor is connected to the first output terminal of the first operational amplifier, and the other end of the seventh resistor is connected to the base of the sixth bipolar transistor. The emitter of the sixth bipolar transistor is connected to the power supply terminal, and the collector of the sixth bipolar transistor is connected to the first input terminal of the third operational amplifier. The second input terminal of the third operational amplifier is connected to the second pin, the third input terminal of the third operational amplifier is connected to the power supply terminal, the first output terminal of the third operational amplifier is connected to the base of the seventh bipolar transistor, and the second output terminal of the third operational amplifier is connected to the ground terminal. The collector of the seventh bipolar transistor is connected to the power supply terminal, and the emitter of the seventh bipolar transistor is connected to one end of the eighth resistor. The other end of the eighth resistor is connected to the base of the eighth bipolar transistor; The collector of the eighth bipolar transistor is connected to the gate of the sixth field-effect transistor, one end of the ninth resistor, and the gate of the seventh field-effect transistor, respectively. The emitter of the eighth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The drain of the sixth field-effect transistor is connected to the second pin, and the source of the sixth field-effect transistor is connected to the other end of the ninth resistor and the source of the seventh field-effect transistor, respectively. The drain of the seventh field-effect transistor is connected to the third pin; The drain of the eighth field-effect transistor is connected to the first pin, and the source of the eighth field-effect transistor is connected to the fourth pin. The other end of the second buzzer is connected to the grounding terminal; The negative terminal of the red LED is connected to one end of the tenth resistor, and the other end of the tenth resistor is connected to the ground terminal.

[0042] Here, when the voltage at the circuit location where the first pin is connected is less than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the second pin is connected is less than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a low-level signal, causing the base of the sixth bipolar transistor to receive a low-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the third operational amplifier. Afterward, the first output terminal of the third operational amplifier outputs a high-level signal, causing the base of the seventh bipolar transistor to receive a high-level signal and turn on. Then, the seventh bipolar transistor pulls down the gate voltage of the sixth field-effect transistor, causing the sixth field-effect transistor to turn on. Next, the drain voltage of the sixth field-effect transistor triggers the base of the eighth bipolar transistor, causing the eighth bipolar transistor to turn on. Then, the eighth bipolar transistor pulls down the gate voltage of the seventh field-effect transistor, causing the seventh field-effect transistor to conduct. It then outputs the voltage at the circuit location connected to the second pin through the circuit location connected to the third pin (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the second pin). Afterward, the conduction of the eighth bipolar transistor causes the second buzzer and the red LED to operate, resulting in a red light and buzzer. Subsequently, the conduction of the eighth bipolar transistor also triggers the gate of the eighth field-effect transistor, causing it to conduct again and output the voltage at the circuit location connected to the first pin through the circuit location connected to the fourth pin (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the first pin).

[0043] In some embodiments of this disclosure, the sixth and seventh field-effect transistors are P-type field-effect transistors, the eighth field-effect transistor is an N-type field-effect transistor, the seventh and eighth bipolar transistors are NPN bipolar transistors, and the sixth bipolar transistor is a PNP bipolar transistor.

[0044] In some implementations, the fault location of the energy storage cabinet can be the power system. The first pin is connected to the circuit corresponding to the fault location of the energy storage cabinet, which is the negative terminal of the power system bus. The second pin is connected to the circuit corresponding to the fault location of the energy storage cabinet, which is the positive terminal of the power system bus. The third and fourth pins can both be connected to an oscilloscope (which can be installed inside the energy storage cabinet to record the voltage output by the third and fourth pins). For example, when the processing terminal detects a fault in the detection circuit, the corresponding prompt information is indicated by a red light and a buzzer. (Continuous beeping) When the output voltage of the third pin is higher than the normal voltage and the output voltage of the fourth pin is close to 0, it indicates that the voltage at the circuit location connected to the first pin is less than the voltage at the circuit location connected to the second pin, and the voltage at the circuit location connected to the second pin is greater than the power supply voltage of the fault detection circuit. It can be determined that the fault detection result of the energy storage cabinet is that there is an overvoltage abnormality in the power system bus. When the prompt information corresponding to the fault detection circuit is not a light or beep, it can be determined that the fault detection result of the energy storage cabinet is that the positive and negative terminals of the power system bus are reversed.

[0045] Taking the fault location of the energy storage cabinet as an example of the power system, the fault detection circuit also includes a ninth bipolar transistor, an eleventh resistor, a tenth bipolar transistor, a ninth field-effect transistor, a twelfth resistor, and a tenth field-effect transistor, wherein: The emitter of the ninth bipolar transistor is connected to the second pin, the base of the ninth bipolar transistor is connected to the first output terminal of the third operational amplifier, and the collector of the ninth bipolar transistor is connected to one end of the eleventh resistor. The other end of the eleventh resistor is connected to the base of the tenth bipolar transistor; The emitter of the tenth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The collector of the tenth bipolar transistor is connected to the gate of the ninth field-effect transistor, one end of the twelfth resistor, and the gate of the tenth field-effect transistor, respectively. The drain of the ninth field-effect transistor is connected to the second pin, and the source of the ninth field-effect transistor is connected to the other end of the twelfth resistor and the source of the tenth field-effect transistor, respectively. The drain of the tenth field-effect transistor is connected to the third pin.

[0046] Here, when the voltage at the circuit location where the first pin is connected is less than the voltage at the circuit location where the second pin is connected, and the voltage at the circuit location where the second pin is connected is greater than the power supply voltage of the fault detection circuit, the first output terminal of the first operational amplifier outputs a low-level signal, causing the base of the sixth bipolar transistor to receive a low-level signal and turn on. This then causes the power supply voltage of the fault detection circuit to be output to the third operational amplifier. Afterwards, the first output terminal of the third operational amplifier outputs a low-level signal, causing the base of the ninth bipolar transistor to receive a low-level signal and turn on. Then, the ninth bipolar transistor pulls down the gate voltage of the ninth field-effect transistor, causing the ninth field-effect transistor to turn on. Next, the drain voltage of the ninth field-effect transistor triggers the base of the tenth bipolar transistor, causing the tenth bipolar transistor to turn on. Then, the tenth bipolar transistor pulls down the gate voltage of the tenth field-effect transistor, causing the tenth field-effect transistor to conduct. It then outputs the voltage at the circuit location connected to the second pin through the circuit location connected to the third pipe (i.e., the voltage at the circuit location connected to the third pin is equal to the voltage at the circuit location connected to the second pin). Afterward, the conduction of the tenth bipolar transistor causes the second buzzer and the red LED to operate, resulting in a red light and buzzer. Subsequently, the conduction of the tenth bipolar transistor also triggers the gate of the eighth field-effect transistor, causing it to conduct and output the voltage at the circuit location connected to the first pipe through the circuit location connected to the fourth pipe (i.e., the voltage at the circuit location connected to the fourth pin is equal to the voltage at the circuit location connected to the first pin).

[0047] In some embodiments of this disclosure, the ninth and tenth field-effect transistors are P-type field-effect transistors (and both are high-voltage field-effect transistors to avoid the risk of breakdown), the ninth bipolar transistor is a PNP type bipolar transistor, and the tenth bipolar transistor is an NPN type bipolar transistor.

[0048] See also: Figure 4 The diagram shows a structural schematic of another fault detection circuit according to some embodiments of the present disclosure. For example... Figure 4As shown, 1 is the first pin, 2 is the second pin, 3 is the third pin, 4 is the fourth pin, V0 is the power supply voltage of the fault detection circuit, operational amplifier 1 is the first operational amplifier, operational amplifier 3 is the third operational amplifier, bipolar transistor T6 is the sixth bipolar transistor, bipolar transistor T7 is the seventh bipolar transistor, bipolar transistor T8 is the eighth bipolar transistor, bipolar transistor T9 is the ninth bipolar transistor, bipolar transistor T10 is the tenth bipolar transistor, R7 is the seventh resistor, R8 is the eighth resistor, R9 is the ninth resistor, R10 is the tenth resistor, R11 is the eleventh resistor, R12 is the twelfth resistor, field-effect transistor 6 is the sixth field-effect transistor, field-effect transistor 7 is the seventh field-effect transistor, field-effect transistor 8 is the eighth field-effect transistor, field-effect transistor 9 is the ninth field-effect transistor, field-effect transistor 10 is the tenth field-effect transistor, and buzzer 2 is the second buzzer.

[0049] Figure 5 A block diagram of a fault detection system for an energy storage cabinet according to some embodiments of this disclosure is shown. The various embodiments in this specification are described in a progressive manner, with reference to each other for similar or identical parts. Each embodiment focuses on describing the differences from other embodiments. In particular, the device embodiments are basically similar to the method embodiments, so the description is relatively simple, and relevant parts can be referred to the description of the method embodiments. Figure 5 As shown, the fault detection system 500 for energy storage cabinets may include at least a location determination module 502, configured to determine the fault location of the energy storage cabinet based on its operating status. The fault detection system 500 also includes an information acquisition module 504, configured to acquire the corresponding prompt information from the fault detection circuit based on the fault location of the energy storage cabinet. The fault detection circuit is magnetically attached to the cabinet door of the energy storage cabinet and has at least two pins, each pin connected to the circuit corresponding to the fault location of the energy storage cabinet. Furthermore, the fault detection system 500 also includes a result determination module 506, configured to determine the fault detection result of the energy storage cabinet based on the circuit location where each pin is connected to the fault location of the energy storage cabinet and the prompt information corresponding to the fault detection circuit.

[0050] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented in software, it can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this specification are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in or transmitted through a computer-readable storage medium. The computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available media may be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., Digital Versatile Discs (DVDs)), or semiconductor media (e.g., Solid State Disks (SSDs)).

[0051] Figure 6 Block diagrams of electronic devices that can implement various embodiments of the present disclosure are shown. For example... Figure 6 As shown, the electronic device 600 includes a processor 601, which can perform various appropriate actions and processes based on computer program instructions loaded into random access memory (RAM) 603 according to computer program instructions stored in read-only memory (ROM) 602. The RAM 603 may also store various programs and data required for the operation of the electronic device 600. The processor 601, ROM 602, and RAM 603 are interconnected via a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0052] The various processes and procedures described above, such as method 200, can be executed by processor 601. For example, in some embodiments, method 200 may be implemented as a software program tangibly contained in a machine-readable medium. In some embodiments, part or all of the software program may be loaded into and / or installed onto electronic device 600 via ROM 602. When the software program is loaded into RAM 603 and executed by processor 601, one or more actions of method 200 described above may be performed.

[0053] The functions described above in this document can be performed at least in part by one or more hardware logic components. For example, exemplary types of hardware logic components that can be used, without limitation, include: field programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload programmable logic devices (CPLDs), and so on.

[0054] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0055] This disclosure can be a method, apparatus, system, and / or program product. The program product may include a machine-readable storage medium on which machine-readable program instructions for performing various aspects of this disclosure are loaded. The machine-readable program instructions described herein can be downloaded from the machine-readable storage medium to various computing / processing devices, or downloaded via a network, such as the Internet, a local area network, a wide area network, and / or a wireless network, to an external computer or external storage device. The network may include copper transmission cables, fiber optic transmissions, wireless transmissions, routers, firewalls, switches, gateway computers, and / or edge servers. A network adapter card or network interface in each computing / processing device receives the machine-readable program instructions from the network and forwards them to the machine-readable storage medium in the respective computing / processing device.

[0056] Machine program instructions used to perform the operations of this disclosure may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, state setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Smalltalk, C++, etc., and conventional procedural programming languages ​​such as the "C" language or similar programming languages. Machine-readable program instructions may be executed entirely on a user's computer, partially on a user's computer, as a standalone software package, partially on a user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or may be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, electronic circuitry, such as programmable logic circuitry, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), is personalized by utilizing state information from the machine-readable program instructions to implement various aspects of this disclosure.

[0057] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing. Furthermore, although operations are depicted in a specific order, this should be understood as requiring that such operations be performed in the specific order shown or in sequential order, or requiring that all illustrated operations be performed to achieve the desired result. In certain environments, multitasking and parallel processing may be advantageous. Similarly, while several specific implementation details are included in the foregoing discussion, these should not be construed as limiting the scope of this disclosure. Certain features described in the context of individual embodiments may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented individually or in any suitable sub-combination in multiple implementations.

[0058] Although the subject matter has been described using language specific to structural features and / or methodological logic, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and actions described above are merely illustrative examples of implementing the claims.

Claims

1. A fault detection method for an energy storage cabinet, characterized in that, include: The location of the fault in the energy storage cabinet is determined based on its operating status. Based on the fault location of the energy storage cabinet, obtain the prompt information corresponding to the fault detection circuit; The fault detection circuit is magnetically attached to the door of the energy storage cabinet. The fault detection circuit has at least two pins, and each pin is connected to the circuit corresponding to the fault location of the energy storage cabinet. as well as Based on the circuit location corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit, the fault detection result of the energy storage cabinet is determined.

2. The method according to claim 1, characterized in that, At least two pins are included, namely, pin 1, pin 2, pin 3, and pin 4; The method of determining the fault detection result of the energy storage cabinet based on the circuit location corresponding to the fault location of each pin connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit includes: Based on the fact that the circuit position corresponding to the fault location of the first pin connected to the energy storage cabinet is the positive terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the second pin connected to the energy storage cabinet is the negative terminal of the power supply of the energy storage cabinet, the circuit position corresponding to the fault location of the third pin connected to the energy storage cabinet is the positive terminal of the power input of the display and control system of the energy storage cabinet, and the circuit position corresponding to the fault location of the fourth pin connected to the energy storage cabinet is the negative terminal of the power input of the display and control system of the energy storage cabinet, it is determined whether the prompt information corresponding to the fault detection circuit is a light-up buzzer. In response to determining that the prompt message corresponding to the fault detection circuit is an illuminated buzzer, the fault detection result of the energy storage cabinet is determined to be an abnormality in the display and control system; or In response to the determination that the prompt message corresponding to the fault detection circuit is not a light-up beep, the fault detection result of the energy storage cabinet is determined to be a power supply abnormality.

3. The method according to claim 2, characterized in that, The fault detection circuit includes a first operational amplifier, a first resistor, a first bipolar transistor, a second operational amplifier, a second bipolar transistor, a second resistor, a third bipolar transistor, a first field-effect transistor, a second field-effect transistor, a third resistor, a third field-effect transistor, a first buzzer, a green light-emitting diode, and a fourth resistor, wherein: The first input terminal of the first operational amplifier is connected to the first pin, the second input terminal of the first operational amplifier is connected to the second pin, the third input terminal of the first operational amplifier is connected to the power supply terminal, the first output terminal of the first operational amplifier is connected to one end of the first resistor, and the second output terminal of the first operational amplifier is connected to the ground terminal. The other end of the first resistor is connected to the base of the first bipolar transistor; The collector of the first bipolar transistor is connected to the power supply terminal, and the emitter of the first bipolar transistor is connected to the first input terminal of the second operational amplifier. The second input terminal of the second operational amplifier is connected to the first pin, the third input terminal of the second operational amplifier is connected to the power supply terminal, the first output terminal of the second operational amplifier is connected to the base of the second bipolar transistor, and the second output terminal of the second operational amplifier is connected to the ground terminal. The collector of the second bipolar transistor is connected to the power supply terminal, and the emitter of the second bipolar transistor is connected to one end of the second resistor; The other end of the second resistor is connected to the base of the third bipolar transistor; The collector of the third bipolar transistor is connected to the gate of the first field-effect transistor, one end of the third resistor, and the gate of the second field-effect transistor, respectively. The emitter of the third bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the positive terminal of the green light-emitting diode, respectively. The drain of the first field-effect transistor is connected to the first pin, and the source of the first field-effect transistor is connected to the source of the second field-effect transistor and the other end of the third resistor, respectively. The drain of the second field-effect transistor is connected to the third pin; The drain of the third field-effect transistor is connected to the second pin, and the source of the third field-effect transistor is connected to the fourth pin. The other end of the first buzzer is connected to the grounding terminal; The negative terminal of the green light-emitting diode is connected to one end of the fourth resistor, and the other end of the fourth resistor is connected to the ground terminal.

4. The method according to claim 3, characterized in that, The fault detection circuit further includes a fourth bipolar transistor, a fifth resistor, a fifth bipolar transistor, a fourth field-effect transistor, a sixth resistor, and a fifth field-effect transistor, wherein: The emitter of the fourth bipolar transistor is connected to the first pin, the base of the fourth bipolar transistor is connected to the first output terminal of the second operational amplifier, and the collector of the fourth bipolar transistor is connected to one end of the fifth resistor. The other end of the fifth resistor is connected to the base of the fifth bipolar transistor; The emitter of the fifth bipolar transistor is connected to the gate of the third field-effect transistor, one end of the first buzzer, and the anode of the green light-emitting diode, respectively. The collector of the fifth bipolar transistor is connected to the gate of the fourth field-effect transistor, one end of the sixth resistor, and the gate of the fifth field-effect transistor, respectively. The drain of the fourth field-effect transistor is connected to the first pin, and the source of the fourth field-effect transistor is connected to the other end of the sixth resistor and the source of the fifth field-effect transistor, respectively. The drain of the fifth field-effect transistor is connected to the third pin.

5. The method according to claim 4, characterized in that, The fault detection circuit further includes a seventh resistor, a sixth bipolar transistor, a third operational amplifier, a seventh bipolar transistor, an eighth resistor, an eighth bipolar transistor, a sixth field-effect transistor, a seventh field-effect transistor, a ninth resistor, an eighth field-effect transistor, a second buzzer, a red light-emitting diode, and a tenth resistor, wherein: One end of the seventh resistor is connected to the first output terminal of the first operational amplifier, and the other end of the seventh resistor is connected to the base of the sixth bipolar transistor. The emitter of the sixth bipolar transistor is connected to the power supply terminal, and the collector of the sixth bipolar transistor is connected to the first input terminal of the third operational amplifier. The second input terminal of the third operational amplifier is connected to the second pin, the third input terminal of the third operational amplifier is connected to the power supply terminal, the first output terminal of the third operational amplifier is connected to the base of the seventh bipolar transistor, and the second output terminal of the third operational amplifier is connected to the ground terminal. The collector of the seventh bipolar transistor is connected to the power supply terminal, and the emitter of the seventh bipolar transistor is connected to one end of the eighth resistor. The other end of the eighth resistor is connected to the base of the eighth bipolar transistor; The collector of the eighth bipolar transistor is connected to the gate of the sixth field-effect transistor, one end of the ninth resistor, and the gate of the seventh field-effect transistor, respectively. The emitter of the eighth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The drain of the sixth field-effect transistor is connected to the second pin, and the source of the sixth field-effect transistor is connected to the other end of the ninth resistor and the source of the seventh field-effect transistor, respectively. The drain of the seventh field-effect transistor is connected to the third pin; The drain of the eighth field-effect transistor is connected to the first pin, and the source of the eighth field-effect transistor is connected to the fourth pin. The other end of the second buzzer is connected to the grounding terminal; The negative terminal of the red LED is connected to one end of the tenth resistor, and the other end of the tenth resistor is connected to the ground terminal.

6. The method according to claim 5, characterized in that, The fault detection circuit further includes a ninth bipolar transistor, an eleventh resistor, a tenth bipolar transistor, a ninth field-effect transistor, a twelfth resistor, and a tenth field-effect transistor, wherein: The emitter of the ninth bipolar transistor is connected to the second pin, the base of the ninth bipolar transistor is connected to the first output terminal of the third operational amplifier, and the collector of the ninth bipolar transistor is connected to one end of the eleventh resistor. The other end of the eleventh resistor is connected to the base of the tenth bipolar transistor; The emitter of the tenth bipolar transistor is connected to the gate of the eighth field-effect transistor, one end of the second buzzer, and the positive terminal of the red light-emitting diode, respectively. The collector of the tenth bipolar transistor is connected to the gate of the ninth field-effect transistor, one end of the twelfth resistor, and the gate of the tenth field-effect transistor, respectively. The drain of the ninth field-effect transistor is connected to the second pin, and the source of the ninth field-effect transistor is connected to the other end of the twelfth resistor and the source of the tenth field-effect transistor, respectively. The drain of the tenth field-effect transistor is connected to the third pin.

7. The method according to claim 6, characterized in that, The first field-effect transistor, the second field-effect transistor, the fourth field-effect transistor, the fifth field-effect transistor, the sixth field-effect transistor, the seventh field-effect transistor, the ninth field-effect transistor, and the tenth field-effect transistor are all P-type field-effect transistors, and the third field-effect transistor and the eighth field-effect transistor are both N-type field-effect transistors.

8. A fault detection system for an energy storage cabinet, characterized in that, include: The location determination module is configured to determine the fault location of the energy storage cabinet based on its operating status. The information acquisition module is configured to acquire the prompt information corresponding to the fault detection circuit based on the fault location of the energy storage cabinet; The fault detection circuit is magnetically attached to the door of the energy storage cabinet. The fault detection circuit has at least two pins, and each pin is connected to the circuit corresponding to the fault location of the energy storage cabinet. as well as The result determination module is configured to determine the fault detection result of the energy storage cabinet based on the circuit location corresponding to the fault location of each of the pins connected to the energy storage cabinet and the prompt information corresponding to the fault detection circuit.

9. A computer-readable storage medium having a computer program stored thereon, the computer-readable storage medium storing instructions that, when executed on a computer or processor, cause the computer or processor to perform the steps of the method as claimed in any one of claims 1-7.

10. An electronic device, characterized in that, include: One or more processors, and A memory associated with the one or more processors, the memory being used to store program instructions that, when read and executed by the one or more processors, perform the steps of the method according to any one of claims 1-7.

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