Integrated gate thyristor junction temperature on-line measurement method and integrated gate thyristor junction temperature on-line measurement device

Abstract

The invention provides an integrated gate thyristor junction temperature on-line measurement method and device, is suitable for the technical field of power transmission and distribution, and can carry out on-line monitoring on the junction temperature of an integrated gate thyristor and timely discover the integrated gate thyristor with a fault risk, so that the integrated gate thyristor can be timely replaced, and the stability and reliability of a converter system are improved. The scheme comprises the following steps: acquiring the actual power and shell temperature of the integrated gate thyristor; based on the first mapping relation, determining the junction temperature of the integrated gate thyristor according to the actual power and the shell temperature of the integrated gate thyristor; wherein the first mapping relation is used for representing the corresponding relation between the junction temperature of the integrated gate thyristor and the power and shell temperature of the integrated gate thyristor.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of intelligent energy, and particularly relates to an integrated gate commutated thyristor junction temperature online measurement method and device. BACKGROUND

[0002] Direct current transmission and distribution system has obvious advantages over alternating current power grid in transmission capacity, safe and reliable operation and flexible configuration. In the direct current transmission and distribution system, power electronic devices based on semiconductor switching devices are usually used to realize voltage conversion and power management. Integrated gate commutated thyristor (IGCT) is a new type of power semiconductor switching device, which has strong large current turn-off capability, high blocking voltage and low conduction power, and has great application potential in various converters.

[0003] In actual working conditions, IGCT has to withstand high electromagnetic stress and thermal stress, and long-term operation will inevitably cause device aging and failure and other problems. In order to realize large-scale engineering application and long-term safe and reliable operation of IGCT in power grid, a complete IGCT state monitoring means is needed.

[0004] The aging and failure of IGCT device have strong sensitivity to temperature, and real-time acquisition of the junction temperature of IGCT during operation is of great significance to the state evaluation. However, due to the structural characteristics of IGCT itself, the temperature (junction temperature) at the center of the IGCT chip cannot be directly measured by the external temperature sensor, and only the temperature (shell temperature) on the shell of the IGCT can be measured, and then the junction temperature of the IGCT is inferred according to the heat conduction model. Due to the complexity of the physical structure of the IGCT device, the calculation of the junction temperature according to the shell temperature needs to solve complex differential equations, which has large amount of calculation and can only be realized offline, and the real-time performance cannot be guaranteed, and online junction temperature monitoring cannot be realized. SUMMARY

[0005] The application provides an integrated gate commutated thyristor junction temperature online measurement method and device, which can monitor the junction temperature of the integrated gate commutated thyristor online, find the integrated gate commutated thyristor with fault risk in time, replace it in time, and improve the stability and reliability of the direct current transmission and distribution network.

[0006] In view of the above problems, the application adopts the following technical scheme:

[0007] In the first aspect, an integrated gate commutated thyristor junction temperature online measurement method is provided. The method comprises: acquiring the actual power and shell temperature of the integrated gate commutated thyristor;

[0008] Based on the first mapping relationship, the junction temperature of the integrated gate commutated thyristor is determined according to the actual power and shell temperature of the integrated gate commutated thyristor;

[0009] The first mapping relationship is used to represent a corresponding relationship between the junction temperature of the integrated gate-commutated thyristor and the power and the case temperature of the integrated gate-commutated thyristor.

[0010] Optionally, the case of the integrated gate-commutated thyristor is cylindrical, and the case temperature includes temperatures monitored by multiple temperature sensors arranged uniformly along the edge of the case of the integrated gate-commutated thyristor at the same time.

[0011] Exemplarily, the first mapping relationship is an electronic table recording the corresponding relationship between the junction temperature of the integrated gate-commutated thyristor and the power and the case temperature of the integrated gate-commutated thyristor. Accordingly, based on the first mapping relationship, the junction temperature of the integrated gate-commutated thyristor is determined according to the actual power and the case temperature of the integrated gate-commutated thyristor, including:

[0012] The junction temperature of any point of the integrated gate-commutated thyristor at any time is determined by looking up the electronic table and / or interpolation operation according to the actual power and the case temperature of the integrated gate-commutated thyristor.

[0013] Further, before the actual power and the case temperature of the integrated gate-commutated thyristor are obtained, the method further includes:

[0014] establishing a heat conduction model for the integrated gate-commutated thyristor;

[0015] obtaining the case temperature and the junction temperature of the integrated gate-commutated thyristor under various power conditions based on the heat conduction model;

[0016] obtaining the first mapping relationship based on a polynomial fitting algorithm according to the case temperature and the junction temperature, the first mapping relationship including a function for describing a corresponding relationship between the operating time, the case temperature and the junction temperature of the integrated gate-commutated thyristor when the power of the integrated gate-commutated thyristor is a specified power.

[0017] Optionally, the heat conduction model includes a boundary condition, the boundary condition satisfies Newton's cooling law, and the boundary condition is used to simulate the heat conduction phenomenon of a boundary point, which is a point located at the edge of the case of the integrated gate-commutated thyristor.

[0018] Further, the method further includes:

[0019] outputting alarm information, the alarm information being used to indicate that the junction temperature of the integrated gate-commutated thyristor is greater than or equal to a junction temperature threshold.

[0020] In a second aspect, an integrated gate-commutated thyristor junction temperature online measurement device is provided, the device including an obtaining module and a determining module, wherein:

[0021] The obtaining module is configured to obtain the actual power and the case temperature of the integrated gate-commutated thyristor.

[0022] determining, by a determining module, the junction temperature of the IGCT based on the first mapping relationship according to the actual power and the case temperature of the IGCT;

[0023] The first mapping relationship is used to represent the corresponding relationship between the junction temperature of the IGCT and the power and the case temperature of the IGCT.

[0024] Optionally, the shell of the IGCT is cylindrical, and the case temperature includes temperatures monitored by a plurality of temperature sensors arranged uniformly along the edge of the shell of the IGCT at the same time.

[0025] Exemplarily, the first mapping relationship is an electronic table recording the corresponding relationship between the junction temperature of the IGCT and the power and the case temperature of the IGCT.

[0026] The determining module is further configured to determine the junction temperature of any point of the IGCT at any time by searching the electronic table and / or interpolation operation according to the actual power and the case temperature of the IGCT.

[0027] Further, the device further includes a establishing module, wherein

[0028] The establishing module is configured to establish a heat conduction model for the IGCT before obtaining the actual power and the case temperature of the IGCT.

[0029] The obtaining module is further configured to obtain the case temperature and the junction temperature of the IGCT under various power conditions based on the heat conduction model.

[0030] The obtaining module is further configured to obtain the first mapping relationship based on a polynomial fitting algorithm according to the case temperature and the junction temperature, the first mapping relationship including a function used to describe the corresponding relationship among the working time, the case temperature and the junction temperature of the IGCT when the power of the IGCT is a specified power.

[0031] Optionally, the heat conduction model includes a boundary condition, the boundary condition satisfies Newton cooling law, and the boundary condition is used to simulate the heat conduction phenomenon of a boundary point, which is a point located at the edge of the shell of the IGCT.

[0032] Further, the device further includes an output module, wherein

[0033] The output module is configured to output an alarm information, the alarm information being used to indicate that the junction temperature of the IGCT is greater than or equal to a junction temperature threshold.

[0034] In a third aspect, an IGCT junction temperature online measurement device is provided. The device includes a processor coupled with a memory.

[0035] The processor is used to read and execute programs or instructions stored in the memory, causing the device to perform the online measurement method for the junction temperature of the integrated gate thyristor described in the first aspect.

[0036] Fourthly, a computer-readable storage medium is provided, storing a program or instructions that, when read and executed by a computer, cause the computer to perform the online measurement method for the junction temperature of the integrated gate thyristor described in the first aspect.

[0037] Based on the online measurement method and apparatus for the junction temperature of integrated gate thyristors provided by this invention, a first mapping relationship, such as a spreadsheet, can be pre-established between the junction temperature of the integrated gate thyristor and its power and case temperature. After collecting the actual power and case temperature of the integrated gate thyristor, the corresponding junction temperature can be found according to the first mapping relationship. This avoids complex partial differential calculations on the heat conduction model of the integrated gate thyristor, significantly reducing the amount of calculation and saving calculation time. This enables online monitoring of the junction temperature of the integrated gate thyristor, thereby timely detection of integrated gate thyristors with potential fault risks (such as device aging or failure) for timely replacement, thus improving the stability and reliability of the converter system.

[0038] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures pointed out in the description, claims and drawings. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 A signal flow diagram of an integrated gate thyristor junction temperature measurement module provided in an embodiment of the present invention;

[0041] Figure 2 for Figure 1 The diagram shows the structure of the FPGA circuit board.

[0042] Figure 3 A simulation calculation flowchart of a heat conduction model of an integrated gate thyristor provided in an embodiment of the present invention;

[0043] Figure 4This is a schematic diagram of the structure of a host computer temperature monitoring module for an integrated gate thyristor junction temperature measuring device provided in an embodiment of the present invention;

[0044] Figure 5 A flowchart illustrating an online method for measuring the junction temperature of an integrated gate thyristor, provided in an embodiment of the present invention;

[0045] Figure 6 A flowchart for online junction temperature monitoring of an integrated gate thyristor is provided as an embodiment of the present invention;

[0046] Figure 7 This is a schematic diagram of an integrated gate thyristor junction temperature online measurement device provided in an embodiment of the present invention;

[0047] Figure 8 This is a schematic diagram of another integrated gate thyristor junction temperature online measurement device provided in an embodiment of the present invention. Detailed Implementation

[0048] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0049] First, combine Figures 1-4 This invention provides an integrated gate thyristor junction temperature online monitoring system. The system comprises three modules: an IGCT case temperature measurement module, a heat transfer model and junction temperature calculation module, and a host computer temperature monitoring module.

[0050] IGCT Case Temperature Measurement Module

[0051] For example, Figure 1 This is a signal flow diagram of an integrated gate thyristor junction temperature measurement module provided in an embodiment of the present invention. Figure 1 As shown, the IGCT shell temperature measurement module adopts a data transmission flow of "temperature sensor -> FPGA (Field-Programmable Gate Array) circuit board -> host computer" to construct a temperature sensor array and data acquisition system, realizing real-time temperature measurement of multiple points on the IGCT shell. The temperature sensor outputs digital signals, which are transmitted to the FPGA for data parsing and framing. Specifically, the FPGA parses the temperature data from each channel according to the timing relationship of the temperature sensor signal output, packages the digital signals into data frames according to a predefined data format, and communicates with the host computer via Ethernet. A schematic diagram of the IGCT shell temperature measurement module signal flow is shown below.Figure 1 .

[0052] Please continue to refer to this. Figure 1 TS1 to TS10 are temperature sensors (TS). Since the IGCT tube shell is cylindrical, the temperature sensors can be evenly distributed along the outer edge of the IGCT tube shell, with each sensor spaced 36° apart, forming a 360° sensor array. Among them, non-contact infrared sensors can be used.

[0053] It should be noted that the number and layout of temperature sensors can be determined based on the power and size of the IGCT. For example, when the IGCT has a higher power, it is usually also larger in size. In this case, more temperature sensors can be set, and the angle between adjacent sensors can be smaller, so as to more comprehensively monitor the shell temperature of various parts of the IGCT housing.

[0054] For example, Figure 2 for Figure 1 The diagram shows the structure of the FPGA circuit board. Figure 2 As shown, a two-wire System Management Bus (SMBus) can be used to transmit IGCT shell temperature data. Given that SMBus data transmission has a specific frame format, the current shell temperature data needs to be parsed according to the timing diagram provided in its user manual. In terms of hardware connections, each sensor has two data lines connected to the FPGA.

[0055] Please continue to refer to this. Figure 2 The SMBus data parsing modules 1-10 are connected to the data lines of temperature sensors TS1-TS10 respectively, and perform parallel and synchronous parsing of the shell temperature data monitored in real time by the 10 temperature sensors. The parsing results are then sent to the data framing module. After the data frame framing module assembles a complete data frame, it is sent to the Ethernet data transmission module. This fully utilizes the high-speed and parallel processing capabilities of the FPGA to achieve real-time and synchronous measurement of the IGCT shell temperature, providing shell temperature data for subsequent junction temperature calculation.

[0056] Heat conduction model and junction temperature calculation module

[0057] The implementation method for junction temperature calculation in this invention is briefly described below:

[0058] First, a heat conduction model of the IGCT is established based on the physical model of the IGCT and the heat conduction equation in two-dimensional polar coordinates. This model is used to obtain the case temperature and junction temperature data of the IGCT under different power levels. Then, based on the data obtained from the simulation of the heat conduction model, a first mapping relationship between the power, junction temperature, and case temperature of the IGCT is obtained by polynomial fitting. Finally, based on this first mapping relationship, the junction temperature of the IGCT can be deduced from the monitored case temperature and the actual power of the IGCT.

[0059] Specifically, the simplified heat conduction model of IGCT can be established using the following process:

[0060] Since the key components of the IGCT chip are mainly composed of silicon, are cylindrical in shape, and have a negligible thickness compared to their radius, they can be modeled as an isotropic silicon disk. Therefore, the heat conduction model of the IGCT can be considered a radial two-dimensional heat conduction model centered at the IGCT junction center, with the governing equations as follows:

[0061]

[0062] Where k is the thermal conductivity coefficient of the thermally conductive material, which in the model is the thermal conductivity coefficient of silicon, taken as k = 148 W / (m·K). g is the heat source and heat sink function at each point in the model. In this model, the heat source of the IGCT is the loss generated by the IGCT turning on and off, which can be regarded as a heat source with a power equal to the actual operating power of the IGCT at the center point, while there are no heat sources or heat sinks in other areas. ρ is the density of the material, which in the model is the density of silicon, taken as ρ = 2330 kg / m³. 3 c is the specific heat capacity of the thermally conductive material, which in the model is the specific heat capacity of silicon, and is taken as c = 712 J / (kg·℃).

[0063] In polar coordinates, the two-dimensional heat conduction equation can be rewritten as:

[0064]

[0065] in, The physical meanings of the remaining parameters are the same as above.

[0066] To facilitate programming the solution of the equations, the model can be discretized using the finite difference method. By analyzing the relationship between the temperatures of adjacent discrete points at the same time, the temperature of any point in the same region at the next time step can be determined. The discretized equations are as follows:

[0067]

[0068] Where T is a three-dimensional array, the first component is the radial component, the second component is the angular component, and the third component is the time component. dr is the radial step size, which is taken as dr = 0.00118m in the model. dθ is the angular step size, which is taken as dθ = 0.02π in the model. dt is the time step size, which is taken as dt = 0.005s in the model.

[0069] It should be noted that since the temperature at the next moment of the boundary point (i.e., the point on the cylindrical surface of IGCT) cannot be directly given by formula (3), boundary conditions need to be added to the equation. For the temperature of the non-boundary point, its value at the next moment can be obtained from the temperature of the surrounding multiple points through the heat conduction equation in the xy coordinate system. Among them, the angular boundary of the non-boundary point can be solved by increasing the number of array columns. For the boundary point, since it is in direct contact with the outside air and transfers heat outward, the boundary condition can be a free heat transfer condition. This condition satisfies Newton's law of cooling, as shown in the following formula:

[0070]

[0071] Where n is the unit normal vector of the IGCT surface, which is the radial direction in this model. h is the heat exchange coefficient between the solid and the gas, and when the gas is dry air at room temperature and pressure, h takes a value of 15 to 100 W / (m²). 2 (℃), the specific value needs to be adjusted according to the actual situation. s T represents the peripheral temperature of the IGCT. f This represents the temperature of the gas near the contact surface. The other parameters are the same as above.

[0072] Its discretization equation can be transformed into:

[0073]

[0074] After adding the above boundary conditions, given the power of the heat source inside the IGCT, the temperature of the discrete points inside the IGCT at any time can be solved.

[0075] The above is only a simplified heat transfer model establishment process for IGCT. In order to improve the accuracy of the model, it is necessary to refine the heat transfer model according to the specific internal structure and material properties of IGCT.

[0076] Then, based on the above heat conduction model, given the power and conduction time of the IGCT, the junction temperature and case temperature of the IGCT can be obtained through simulation calculation. The simulation calculation process is as follows: Figure 3 As shown.

[0077] Please refer to Figure 3 After obtaining the junction temperature and case temperature through simulation calculations, the IGCT loss power is constant (p iWhen time is used as an intermediate variable, and the external shell temperature is used as the independent variable and the internal junction temperature is used as the dependent variable, a functional relationship can be obtained. like Figure 5 The data fitting section is shown in the figure.

[0078] As an implementation example, to simplify the calculation, we can consider only the case of a uniform shell temperature distribution, for example, by using the following fifth-order polynomial approximation function:

[0079]

[0080] Based on simulation data, the coefficient values ​​of each term can be easily obtained, thus yielding different power values ​​(p). i The first mapping relationship under )

[0081] Then, the junction temperature of the IGCT can be obtained based on the actual monitored power and case temperature of the IGCT.

[0082] It should be noted that the shell temperature of an actual IGCT is not necessarily uniformly distributed. In this case, a more complex heat transfer model and fitting function are required to obtain the first mapping relationship between power, junction temperature and shell temperature.

[0083] Upper computer temperature monitoring module

[0084] For example, Figure 4 This is a schematic diagram of the upper computer temperature monitoring module of an integrated gate thyristor junction temperature measurement device provided in an embodiment of the present invention. Figure 4 As shown, the host computer temperature monitoring module includes the following four sub-modules: control panel, temperature distribution map, historical data, and early warning panel.

[0085] Please continue to refer to this. Figure 4 The control panel submodule is used to set parameters such as IGCT structure parameters, data recording / storage conditions, and length.

[0086] The temperature distribution map submodule can display the temperature curves and data of the sensor array in real time; it can also display the calculated junction temperature of the IGCT chip. From the temperature distribution map, the temperature distribution and maximum temperature on the IGCT chip can be observed intuitively.

[0087] The historical data submodule can display various historical data during the IGCT operation, including historical data of the highest temperature and its trend graph.

[0088] The warning panel submodule can be configured with various warning thresholds and other parameters, displays a real-time alarm interface, and has a built-in judgment algorithm that will issue an alarm signal when the maximum temperature exceeds the warning threshold.

[0089] The following is combined Figure 5 This section describes the specific implementation of the online measurement method for the junction temperature of integrated gate thyristors provided in the embodiments of the present invention.

[0090] For example, Figure 5 This is a flowchart illustrating an online method for measuring the junction temperature of an integrated gate thyristor, provided as an embodiment of the present invention. Figure 5 As shown, the method includes the following steps:

[0091] S501 obtains the actual power and case temperature of the integrated gate thyristor.

[0092] As can be seen from the above, the housing of an integrated gate thyristor is usually cylindrical. The housing temperature includes the temperature independently monitored at the same time by multiple temperature sensors that are evenly arranged along the edge of the housing of the integrated gate thyristor, thereby obtaining the housing temperature of multiple boundary points of the IGCT in real time.

[0093] Furthermore, before obtaining the actual power and case temperature of the integrated gate thyristor, the method also includes the following steps:

[0094] Step 1: Establish a heat conduction model for the integrated gate thyristor;

[0095] Step 2: Based on the heat conduction model, obtain the case temperature and junction temperature of the integrated gate thyristor under various power conditions;

[0096] Step 3: Based on the case temperature and junction temperature, obtain the first mapping relationship using a polynomial fitting algorithm. The first mapping relationship includes a function that describes the correspondence between the operating time, case temperature, and junction temperature of the integrated gate thyristor when the power of the integrated gate thyristor is a specified power.

[0097] Optionally, the heat conduction model includes boundary conditions that satisfy Newton's law of cooling. These boundary conditions are used to simulate heat conduction at boundary points, which are points located at the edge of the integrated gate thyristor's casing.

[0098] The specific implementation of steps 1-3 above can be found in the process of establishing the first mapping relationship in the heat conduction model of the integrated gate thyristor mentioned above, and will not be repeated here.

[0099] S502, based on the first mapping relationship, determines the junction temperature of the integrated gate thyristor according to the actual power and case temperature of the integrated gate thyristor.

[0100] The first mapping relationship is used to characterize the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor.

[0101] For example, the first mapping relationship is a spreadsheet containing the correspondence between the junction temperature of the integrated gate thyristor and its power and case temperature. Accordingly, based on the first mapping relationship, determining the junction temperature of the integrated gate thyristor according to its actual power and case temperature includes:

[0102] Based on the actual power and case temperature of the integrated gate thyristor, the junction temperature of any point in the integrated gate thyristor at any given time is determined by consulting a spreadsheet and / or by interpolation.

[0103] For example, the junction temperature of a point on the line connecting the junction center (center of the circle) and the boundary point can be obtained directly by looking up the spreadsheet. As another example, for points other than those on the line connecting the junction center (center of the circle) and the boundary point, the junction temperatures of the two adjacent boundary points can be obtained by looking up the table, and the junction temperature of the other point can be calculated based on an interpolation algorithm.

[0104] Furthermore, the method also includes:

[0105] Output alarm information, which indicates that the junction temperature of the integrated gate thyristor is greater than or equal to the junction temperature threshold.

[0106] Specifically, alarm information can be obtained through the above... Figure 4 The temperature monitoring module of the host computer of the integrated gate thyristor junction temperature measurement device shown is used to complete this task. For detailed implementation, please refer to the above text, which will not be repeated here.

[0107] The following is combined Figure 6 This illustrates the specific implementation of online junction temperature monitoring for integrated gate thyristors. For example, Figure 6 This is a flowchart illustrating online junction temperature monitoring of an integrated gate thyristor, provided as an embodiment of the present invention. Figure 6 As shown, after obtaining the first mapping relationship, the junction temperature of the IGCT can be calculated in real time based on the shell temperature and IGCT power obtained by the IGCT shell temperature measurement module, by means of table lookup (an electronic spreadsheet containing the first mapping relationship) and interpolation, so as to avoid complex partial differential calculations.

[0108] Based on the online measurement method for the junction temperature of integrated gate thyristors provided by this invention, a first mapping relationship, such as a spreadsheet, can be pre-established between the junction temperature of the integrated gate thyristor and its power and case temperature. After collecting the actual power and case temperature of the integrated gate thyristor, the corresponding junction temperature can be found according to the first mapping relationship. This avoids complex partial differential calculations on the heat conduction model of the integrated gate thyristor, significantly reducing the amount of calculation and saving calculation time. This enables online monitoring of the junction temperature of the integrated gate thyristor, thereby timely detection of integrated gate thyristors with fault risks (such as device aging or failure) for timely replacement, thus improving the stability and reliability of the DC power transmission and distribution network.

[0109] The above combination Figure 5 and Figure 6 The method for online measurement of the junction temperature of an integrated gate thyristor provided in the embodiments of the present invention is described in detail below. Figure 7 and Figure 8 This invention describes the online measurement device for the junction temperature of an integrated gate thyristor provided in the embodiments of the present invention.

[0110] For example, Figure 7 A schematic diagram of an integrated gate thyristor junction temperature online measurement device is also provided as an embodiment of the present invention. This device can perform the integrated gate thyristor junction temperature online measurement method described in the above-described method embodiments.

[0111] like Figure 7 As shown, the device 700 includes: an acquisition module 701 and a determination module 702; wherein,

[0112] The acquisition module 701 is used to acquire the actual power and case temperature of the integrated gate thyristor;

[0113] The determination module 702 is used to determine the junction temperature of the integrated gate thyristor based on the first mapping relationship and according to the actual power and case temperature of the integrated gate thyristor.

[0114] The first mapping relationship is used to characterize the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor.

[0115] Optionally, the housing of the integrated gate thyristor is cylindrical, and the housing temperature includes the temperature independently monitored at the same time by multiple temperature sensors evenly arranged along the edge of the housing of the integrated gate thyristor.

[0116] For example, the first mapping relationship is an electronic spreadsheet that records the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor.

[0117] The determination module 702 is also used to determine the junction temperature of any point of the integrated gate thyristor at any time by looking up a spreadsheet and / or by interpolation, based on the actual power and case temperature of the integrated gate thyristor.

[0118] Furthermore, the device 700 also includes: a building module 703; wherein,

[0119] Module 703 is established to create a heat conduction model for the integrated gate thyristor before obtaining the actual power and case temperature of the integrated gate thyristor.

[0120] The acquisition module 701 is also used to acquire the case temperature and junction temperature of the integrated gate thyristor under various power conditions based on the heat conduction model;

[0121] The acquisition module 701 is further configured to acquire a first mapping relationship based on the case temperature and junction temperature using a polynomial fitting algorithm. The first mapping relationship includes a function used to describe the correspondence between the operating time, case temperature, and junction temperature of the integrated gate thyristor when the power of the integrated gate thyristor is a specified power.

[0122] Optionally, the heat conduction model includes boundary conditions that satisfy Newton's law of cooling. These boundary conditions are used to simulate heat conduction at boundary points, which are points located at the edge of the integrated gate thyristor's casing.

[0123] Furthermore, the device 700 also includes: an output module 704; wherein,

[0124] Output module 704 is used to output alarm information, which indicates that the junction temperature of the integrated gate thyristor is greater than or equal to the junction temperature threshold.

[0125] For example, Figure 8 This is a schematic diagram of another integrated gate thyristor junction temperature online measurement device provided in an embodiment of the present invention. This device 800 can perform the integrated gate thyristor junction temperature online measurement method described in the above-described method embodiment.

[0126] like Figure 8 As shown, the device 800 includes a processor 801 coupled to a memory 802; wherein the processor 801 is used to read and execute programs or instructions stored in the memory 802, causing the device 800 to execute the energy dispatching method based on a combined thermal and power virtual power plant as described in the above method embodiments.

[0127] Optionally, the device 800 may also include a transceiver 803 for communicating with other devices.

[0128] It should be noted that, for ease of explanation, Figure 7 and Figure 8Only the main components of the integrated gate thyristor junction temperature online measurement device are shown. In practical applications, the integrated gate thyristor junction temperature online measurement device may also include components or assemblies not shown in the figure.

[0129] This invention also provides a computer-readable storage medium storing a program or instructions that, when read and executed by a computer, cause the computer to perform the online measurement method for the junction temperature of an integrated gate thyristor as described in the above-described method embodiments.

[0130] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for online measurement of junction temperature of an integrated gate thyristor, characterized in that, include: Obtain the actual power and case temperature of the integrated gate thyristor; Based on the first mapping relationship, the junction temperature of the integrated gate thyristor is determined according to the actual power and case temperature of the integrated gate thyristor. The first mapping relationship is used to characterize the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor.

2. The method for online measurement of junction temperature of integrated gate thyristors according to claim 1, characterized in that, The housing of the integrated gate thyristor is cylindrical, and the housing temperature includes the temperature independently monitored at the same time by multiple temperature sensors evenly arranged along the edge of the housing of the integrated gate thyristor.

3. The method for online measurement of junction temperature of integrated gate thyristors according to claim 2, characterized in that, The first mapping relationship is an electronic spreadsheet that records the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor. Based on the first mapping relationship, the junction temperature of the integrated gate thyristor is determined according to its actual power and case temperature, including: Based on the actual power and case temperature of the integrated gate thyristor, the junction temperature of any point of the integrated gate thyristor at any time is determined by looking up the spreadsheet and / or by interpolation.

4. The method for online measurement of junction temperature of integrated gate thyristors according to any one of claims 1-3, characterized in that, Before obtaining the actual power and case temperature of the integrated gate thyristor, the method further includes: A heat conduction model is established for the integrated gate thyristor; Based on the heat conduction model, the case temperature and junction temperature of the integrated gate thyristor under various power conditions are obtained; Based on the case temperature and junction temperature, the first mapping relationship is obtained using a polynomial fitting algorithm. The first mapping relationship includes a function that describes the correspondence between the operating time, case temperature, and junction temperature of the integrated gate thyristor when the power of the integrated gate thyristor is a specified power.

5. The method for online measurement of junction temperature of integrated gate thyristors according to claim 4, characterized in that, The heat conduction model includes boundary conditions that satisfy Newton's law of cooling. These boundary conditions are used to simulate heat conduction at boundary points, which are points located at the edge of the casing of the integrated gate thyristor.

6. The method for online measurement of junction temperature of integrated gate thyristors according to claim 4, characterized in that, The method further includes: Output alarm information, which is used to indicate that the junction temperature of the integrated gate thyristor is greater than or equal to the junction temperature threshold.

7. An integrated gate thyristor junction temperature online measurement device, characterized in that, The device includes: an acquisition module and a determination module; wherein... The acquisition module is used to acquire the actual power and case temperature of the integrated gate thyristor; The determining module is used to determine the junction temperature of the integrated gate thyristor based on the first mapping relationship and according to the actual power and case temperature of the integrated gate thyristor. The first mapping relationship is used to characterize the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor.

8. The integrated gate thyristor junction temperature online measurement device according to claim 7, characterized in that, The housing of the integrated gate thyristor is cylindrical, and the housing temperature includes the temperature independently monitored at the same time by multiple temperature sensors evenly arranged along the edge of the housing of the integrated gate thyristor.

9. The integrated gate thyristor junction temperature online measurement device according to claim 8, characterized in that, The first mapping relationship is an electronic spreadsheet that records the correspondence between the junction temperature of the integrated gate thyristor and the power and case temperature of the integrated gate thyristor. The determining module is further configured to determine the junction temperature of any point of the integrated gate thyristor at any time by looking up the spreadsheet and / or by interpolation, based on the actual power and case temperature of the integrated gate thyristor.

10. The integrated gate thyristor junction temperature online measurement device according to any one of claims 7-9, characterized in that, The device further includes: an establishment module; wherein... The establishment module is used to establish a heat conduction model for the integrated gate thyristor before obtaining the actual power and case temperature of the integrated gate thyristor; The acquisition module is also used to acquire the case temperature and junction temperature of the integrated gate thyristor under various power conditions based on the heat conduction model. The acquisition module is further configured to acquire the first mapping relationship based on the case temperature and junction temperature using a polynomial fitting algorithm. The first mapping relationship includes a function used to describe the correspondence between the operating time, case temperature, and junction temperature of the integrated gate thyristor when the power of the integrated gate thyristor is a specified power.

11. The integrated gate thyristor junction temperature online measurement device according to claim 10, characterized in that, The heat conduction model includes boundary conditions that satisfy Newton's law of cooling. These boundary conditions are used to simulate heat conduction at boundary points, which are points located at the edge of the casing of the integrated gate thyristor.

12. The integrated gate thyristor junction temperature online measurement device according to claim 10, characterized in that, The device further includes: an output module; wherein... The output module is used to output alarm information, which indicates that the junction temperature of the integrated gate thyristor is greater than or equal to the junction temperature threshold.

13. An integrated gate thyristor junction temperature online measurement device, characterized in that, include: Processor, the processor being coupled to memory; The processor is used to read and execute the program or instructions stored in the memory, causing the device to perform the online measurement method for the junction temperature of the integrated gate thyristor as described in any one of claims 1-6.

14. A computer-readable storage medium, characterized in that, The device stores a program or instructions that, when read and executed by a computer, cause the computer to perform the online measurement method for the junction temperature of an integrated gate thyristor as described in any one of claims 1-6.

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