Photoetching objective lens and microelectronic equipment

Abstract

The invention provides a photoetching objective lens and microelectronic equipment, and relates to the technical field of photoetching lenses, the photoetching objective lens is provided with an object side and an image side which are oppositely arranged along the optical axis direction, the photoetching objective lens comprises a first lens with positive focal power, a second lens with positive focal power, a third lens with negative focal power, a fourth lens with negative focal power, a fifth lens with positive focal power, a sixth lens with negative focal power, a seventh lens with positive focal power and an eighth lens with positive focal power which are sequentially arranged from an object side to an image side, the photoetching objective lens comprises a ninth lens with positive focal power, a tenth lens with negative focal power, an eleventh lens with positive focal power and an image plane, so that the image space numerical aperture of the photoetching objective lens reaches 0.3, the resolution of the photoetching objective lens reaches 0.8 mu m, and the total optical length of the photoetching objective lens is controlled between 200mm and 300mm. According to the scheme, the photoetching objective lens with low cost, high numerical aperture and long working distance is realized.

Description

Technical Field

[0001] This invention relates to the field of photolithography lens technology, and particularly to a photolithography objective and a microelectronic device. Background Technology

[0002] With the rapid development of microelectronics technology in recent years, the application scenarios of large-scale integrated circuits are increasing, leading to a growing demand for microelectronic devices and microfabrication technologies. Photolithography, with its wide range of applications and rapid technological updates, is driving the rapid development of precision processing technologies. Photolithography machines use a technique similar to photo printing to print intricate patterns from a photomask onto a silicon wafer through light exposure, and are applied in fields such as chip manufacturing, LED manufacturing, and packaging.

[0003] With the continuous advancement of photolithography technology, there is a growing demand for more precise lines to be exposed on chips. In some fields, there are also limitations on the size of photolithography systems. Therefore, the market urgently needs a photolithography objective that can balance small size, large numerical aperture, and high resolution. Summary of the Invention

[0004] The main objective of this invention is to provide a lithography objective and a microelectronic device, which aims to provide a lithography objective that combines small size, large numerical aperture and high resolution.

[0005] To achieve the above objectives, the present invention proposes a photolithography objective having an object side and an image side arranged opposite to each other along the optical axis. The photolithography objective includes, from the object side to the image side, a first lens with positive optical power, a second lens with positive optical power, a third lens with negative optical power, a fourth lens with negative optical power, a fifth lens with positive optical power, a sixth lens with negative optical power, a seventh lens with positive optical power, an eighth lens with positive optical power, a ninth lens with positive optical power, a tenth lens with negative optical power, an eleventh lens with positive optical power, and an image plane, so that the image-side numerical aperture of the photolithography objective reaches 0.3, the resolution of the photolithography objective reaches 0.8 μm, and the total optical length of the photolithography objective is controlled between 200 mm and 300 mm.

[0006] In one embodiment, the focal length of the first lens is f1, the focal length of the second lens is f2, the focal length of the third lens is f3, the focal length of the fourth lens is f4, the focal length of the fifth lens is f5, the focal length of the sixth lens is f6, the focal length of the seventh lens is f7, the focal length of the eighth lens is f8, the focal length of the ninth lens is f9, the focal length of the tenth lens is f10, the focal length of the eleventh lens is f11, and the focal length of the photolithography objective is f, wherein:

[0007] 0.1<|f1 / f|<0.3, 0.1<|f2 / f|<0.3, 0.1<|f3 / f|<0.3, 0.1<|f4 / f|<0.2, 0.1<|f5 / f|<0.2, 0.1<|f6 / f |

[0008] In one embodiment, the photolithography objective further includes an aperture stop disposed between the fifth lens and the sixth lens.

[0009] In one embodiment, the first lens, second lens, third lens, fourth lens, fifth lens, sixth lens, seventh lens, eighth lens, ninth lens, tenth lens, and eleventh lens are all configured as spherical lenses.

[0010] In one embodiment, the focal length of the photolithography objective is f, and the total optical length of the photolithography objective is TTL, wherein:

[0011] 0.5 < TTL / f < 0.6.

[0012] In one embodiment, the object-side radius of the first lens is R11, the image-side radius is R12, -175mm≤R11≤-155mm, and -55mm≤R12≤-45mm;

[0013] The second lens has an object-side radius of R21 and an image-side radius of R22, where 25mm ≤ R21 ≤ 35mm and 55mm ≤ R22 ≤ 65mm.

[0014] The third lens has an object-side radius of R31 and an image-side radius of R32, where 15mm ≤ R31 ≤ 20mm and 10mm ≤ R32 ≤ 15mm.

[0015] The fourth lens has an object-side radius of R41 and an image-side radius of R42, where -25mm≤R41≤-15mm and 40mm≤R42≤50mm.

[0016] The object-side radius of the fifth lens is R51, the image-side radius is R52, -265mm≤R51≤-245mm, -20mm≤R52≤-25mm;

[0017] The object-side radius of the sixth lens is R61, the image-side radius is R62, -50mm≤R61≤-35mm, and 200mm≤R62≤220mm.

[0018] The seventh lens has an object-side radius of R71 and an image-side radius of R72, with 100mm ≤ R71 ≤ 110mm and -35mm ≤ R72 ≤ -30mm.

[0019] The object-side radius of the eighth lens is R81, the image-side radius is R82, 75mm≤R81≤85mm, and -125mm≤R82≤-110mm;

[0020] The object-side radius of the ninth lens is R91, the image-side radius is R92, 50mm≤R91≤60mm, and -260mm≤R92≤-240mm;

[0021] The object-side radius of the tenth lens is R101, the image-side radius is R102, -60mm≤R101≤-50mm, -1700mm≤R102≤-1650mm;

[0022] The object-side radius of the eleventh lens is R111, and the image-side radius is R112, with 40mm≤R111≤45mm and -280mm≤R112≤-265mm.

[0023] In one embodiment, the thickness of the first lens is G1, where 5mm ≤ G1 ≤ 6mm;

[0024] The thickness of the second lens is G2, where 8mm ≤ G2 ≤ ​​10mm;

[0025] The thickness of the third lens is G3, where 8mm ≤ G3 ≤ 10mm;

[0026] The thickness of the fourth lens is G4, where 4mm ≤ G4 ≤ 5mm;

[0027] The thickness of the fifth lens is G5, where 8mm ≤ G5 ≤ 10mm;

[0028] The thickness of the sixth lens is G6, where 4mm ≤ G6 ≤ 6mm;

[0029] The thickness of the seventh lens is G7, where 8mm ≤ G7 ≤ 10mm;

[0030] The thickness of the eighth lens is G8, where 4mm ≤ G8 ≤ 5mm;

[0031] The thickness of the ninth lens is G9, where 4mm ≤ G9 ≤ 5mm;

[0032] The thickness of the tenth lens is G10, where 8mm ≤ G10 ≤ 10mm;

[0033] The thickness of the eleventh lens is G11, where 7mm ≤ G11 ≤ 29mm.

[0034] In one embodiment, the refractive index of the first lens is n1, the refractive index of the second lens is n2, the refractive index of the third lens is n3, the refractive index of the fourth lens is n4, the refractive index of the fifth lens is n5, the refractive index of the sixth lens is n6, the refractive index of the seventh lens is n7, the refractive index of the eighth lens is n8, the refractive index of the ninth lens is n9, the refractive index of the tenth lens is n10, and the refractive index of the eleventh lens is n11, wherein:

[0035] 1.60≤n1≤1.70, 1.50≤n2≤1.70, 1.60≤n3≤1.70, 1.60≤n4≤1.70, 1.45≤n5≤1.55, 1.60≤n6≤1.70, 1.45≤n7≤1.55, 1.45≤n8≤1.55, 1.45≤n9≤1.55, 1.60≤n10≤1.70, 1.60≤n11≤1.70.

[0036] In one embodiment, the dispersion coefficient of the first lens is v1, the dispersion coefficient of the second lens is v2, the dispersion coefficient of the third lens is v3, the dispersion coefficient of the fourth lens is v4, the dispersion coefficient of the fifth lens is v5, the dispersion coefficient of the sixth lens is v6, the dispersion coefficient of the seventh lens is v7, the dispersion coefficient of the eighth lens is v8, the dispersion coefficient of the ninth lens is v9, the dispersion coefficient of the tenth lens is v10, and the dispersion coefficient of the eleventh lens is v11, wherein:

[0037] 36≤v1≤37,40≤v2≤41,36≤v3≤37,36≤v4≤37,81≤v5≤82,36≤v6≤37,81≤v7≤82,81≤v8≤82,81≤v9≤82,36≤v10≤37,36≤v11≤37。

[0038] The present invention also proposes a microelectronic device comprising the aforementioned photolithography objective. The photolithography objective has an object side and an image side arranged opposite to each other along the optical axis. The photolithography objective includes, from the object side to the image side, a first lens with positive optical power, a second lens with positive optical power, a third lens with negative optical power, a fourth lens with negative optical power, a fifth lens with positive optical power, a sixth lens with negative optical power, a seventh lens with positive optical power, an eighth lens with positive optical power, a ninth lens with positive optical power, a tenth lens with negative optical power, an eleventh lens with positive optical power, and an image plane, such that the image-side numerical aperture of the photolithography objective reaches 0.3, the resolution of the photolithography objective reaches 0.8 μm, and the total optical length of the photolithography objective is controlled between 200 mm and 300 mm.

[0039] The technical solution provided by this invention uses six, seven, ten, and eleven lenses to jointly correct spherical aberration of the system; and first, fifth, sixth, eighth, and ninth lenses to jointly correct distortion of the system, ensuring the imaging quality of the lens. The eleventh lens, with its positive optical power, handles a larger optical power of the system, changes the propagation direction of the light beam, corrects aberrations in the off-axis field of view, and is more conducive to the image formation of the light beam on the image plane. By employing eleven lenses and rationally setting the optical power and shape matching of each lens, the resolution of the lens is improved while maintaining a compact structure. The proposed solution controls the total optical length of the lens between 200mm and 300mm, achieves a resolution of 0.8μm for the lithography objective, and a numerical aperture of 0.3 in the image side, thus combining the advantages of small size, large numerical aperture, and high resolution. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the structure of an embodiment of the photolithography objective lens provided by the present invention;

[0042] Figure 2 for Figure 1 A schematic diagram of the MTF curve of a medium-resolution lithography objective lens at 625 lp / mm.

[0043] Figure 3 for Figure 1 A schematic diagram of the defocusing curve of a mid-light lithography objective lens at 625 lp / mm.

[0044] Figure 4 for Figure 1 SPOT dot plot of the intermediate lithography objective lens;

[0045] Figure 5 for Figure 1 A schematic diagram of field curvature distortion in a photolithography objective lens.

[0046] Explanation of icon numbers:

[0047] 1000. Photolithography objective lens; 1. First lens; 2. Second lens; 3. Third lens; 4. Fourth lens; 5. Fifth lens; 6. Sixth lens; 7. Seventh lens; 8. Eighth lens; 9. Ninth lens; 10. Tenth lens; 11. Eleventh lens; 12. Aperture.

[0048] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0050] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0051] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0052] With the rapid development of microelectronics technology in recent years, the application scenarios of large-scale integrated circuits are increasing, leading to a growing demand for microelectronic devices and microfabrication technologies. Photolithography, with its wide range of applications and rapid technological updates, is driving the rapid development of precision processing technologies. Photolithography machines use a technique similar to photo printing to print intricate patterns from a photomask onto a silicon wafer through light exposure, and are applied in fields such as chip manufacturing, LED manufacturing, and packaging.

[0053] With the continuous advancement of photolithography technology, there is a growing demand for more precise lines to be exposed on chips. In some fields, there are also limitations on the size of photolithography systems. Therefore, the market urgently needs a photolithography objective that can balance small size, large numerical aperture, and high resolution.

[0054] The main objective of this invention is to provide a lithography objective and a microelectronic device, which aims to provide a lithography objective that combines small size, large numerical aperture and high resolution.

[0055] Please see Figure 1 This invention proposes a photolithography objective 1000, having an object side and an image side arranged opposite to each other along the optical axis. The photolithography objective 1000 includes, from the object side to the image side, a first lens with positive optical power, a second lens 2 with positive optical power, a third lens 3 with negative optical power, a fourth lens 4 with negative optical power, a fifth lens 5 with positive optical power, a sixth lens 6 with negative optical power, a seventh lens 7 with positive optical power, an eighth lens 8 with positive optical power, a ninth lens 9 with positive optical power, a tenth lens 10 with negative optical power, an eleventh lens 11 with positive optical power, and an image plane, so that the image-side numerical aperture of the photolithography objective 1000 reaches 0.3, the resolution of the photolithography objective 1000 reaches 0.8 μm, and the total optical length of the photolithography objective 1000 is controlled between 200 mm and 300 mm.

[0056] The technical solution provided by this invention uses the sixth lens 6, the seventh lens 7, the tenth lens 10, and the eleventh lens 11 to jointly correct the spherical aberration of the system; the first lens 1, the fifth lens 5, the sixth lens 6, the eighth lens 8, and the ninth lens 9 to jointly correct the distortion of the system, ensuring the imaging quality of the lens; by setting the eleventh lens 11 with positive optical power, it bears a larger optical power of the system, changes the propagation direction of the light beam, corrects the aberrations in the off-axis field of view, and is more conducive to the light beam forming on the image plane; by using eleven lenses and rationally setting the optical power and shape matching relationship of each lens, the resolution of the lens is improved while maintaining a compact structure. The total optical length of the lens proposed in this solution is controlled between 200mm and 300mm, the resolution of the lithography objective reaches 0.8μm, and the image-side numerical aperture reaches 0.3, thus combining the advantages of small size, large numerical aperture, and high resolution.

[0057] Furthermore, the photolithography objective 1000 also includes an aperture stop 12, which is disposed between the fifth lens 5 and the sixth lens 6. The aperture stop 12 limits the light beam aperture along the optical axis, blocking some light rays, thereby reducing light spots, improving image contrast, and also enlarging the target surface and improving image quality. Adjusting the light throughput of the aperture stop 12 according to actual conditions helps to further improve imaging quality.

[0058] Further, the focal length of the first lens 1 is f1, the focal length of the second lens 2 is f2, the focal length of the third lens 3 is f3, the focal length of the fourth lens 4 is f4, the focal length of the fifth lens 5 is f5, the focal length of the sixth lens 6 is f6, the focal length of the seventh lens 7 is f7, the focal length of the eighth lens 8 is f8, the focal length of the ninth lens 9 is f9, the focal length of the tenth lens 10 is f10, the focal length of the eleventh lens 11 is f11, and the focal length of the photolithography objective lens 1000 is... The focal length is f, where: 0.1 < |f1 / f| < 0.3, 0.1 < |f2 / f| < 0.3, 0.1 < |f3 / f| < 0.3, 0.1 < |f4 / f| < 0.2, 0.1 < |f5 / f| < 0.2, 0.1 < |f6 / f| < 0.3, 0.1 < |f7 / f| < 0.2, 0.1 < |f8 / f| < 0.3, 0.1 < |f9 / f| < 0.3, 0.1 < |f10 / f| < 0.2, 0.1 < |f11 / f| < 0.3. This embodiment is a preferred embodiment. By combining different lenses and rationally allocating their focal lengths in relation to the lens focal length, the entire lens achieves high resolution.

[0059] Further, the first lens 1 has an object-side radius of R11 and an image-side radius of R12, where -175mm ≤ R11 ≤ -155mm and -55mm ≤ R12 ≤ -45mm; the second lens 2 has an object-side radius of R21 and an image-side radius of R22, where 25mm ≤ R21 ≤ 35mm and 55mm ≤ R22 ≤ 65mm; the third lens 3 has an object-side radius of R31 and an image-side radius of R32, where 15mm ≤ R31 ≤ 20mm and 10mm ≤ R12 ≤ -45mm. m≤R32≤15mm; the fourth lens 4 has an object-side radius of R41 and an image-side radius of R42, -25mm≤R41≤-15mm, 40mm≤R42≤50mm; the fifth lens 5 has an object-side radius of R51 and an image-side radius of R52, -265mm≤R51≤-245mm, -20mm≤R52≤-25mm; the sixth lens 6 has an object-side radius of R61 and an image-side radius of R62, -50mm≤R61≤ -35mm, 200mm≤R62≤220mm; the object-side radius of the seventh lens 7 is R71, the image-side radius is R72, 100mm≤R71≤110mm, -35mm≤R72≤-30mm; the object-side radius of the eighth lens 8 is R81, the image-side radius is R82, 75mm≤R81≤85mm, -125mm≤R82≤-110mm; the object-side radius of the ninth lens 9 is R91, the image-side radius is R9... 2. 50mm≤R91≤60mm, -260mm≤R92≤-240mm; the object-side radius of the tenth lens 10 is R101, the image-side radius is R102, -60mm≤R101≤-50mm, -1700mm≤R102≤-1650mm; the object-side radius of the eleventh lens 11 is R111, the image-side radius is R112, 40mm≤R111≤45mm, -280mm≤R112≤-265mm.

[0060] Further, the refractive index of the first lens 1 is n1, the refractive index of the second lens 2 is n2, the refractive index of the third lens 3 is n3, the refractive index of the fourth lens 4 is n4, the refractive index of the fifth lens 5 is n5, the refractive index of the sixth lens 6 is n6, the refractive index of the seventh lens 7 is n7, the refractive index of the eighth lens 8 is n8, the refractive index of the ninth lens 9 is n9, and the refractive index of the tenth lens 10 is n10. Lens 11 has a refractive index of n11, where: 1.60≤n1≤1.70, 1.50≤n2≤1.70, 1.60≤n3≤1.70, 1.60≤n4≤1.70, 1.45≤n5≤1.55, 1.60≤n6≤1.70, 1.45≤n7≤1.55, 1.45≤n8≤1.55, 1.45≤n9≤1.55, 1.60≤n10≤1.70, and 1.60≤n11≤1.70. This embodiment is a preferred embodiment, which improves the image quality of the lens by combining different lenses and rationally distributing their refractive indices.

[0061] Further, the dispersion coefficient of the first lens is v1, the dispersion coefficient of the second lens is v2, the dispersion coefficient of the third lens is v3, the dispersion coefficient of the fourth lens is v4, the dispersion coefficient of the fifth lens is v5, the dispersion coefficient of the sixth lens is v6, the dispersion coefficient of the seventh lens is v7, the dispersion coefficient of the eighth lens is v8, the dispersion coefficient of the ninth lens is v9, the dispersion coefficient of the tenth lens is v10, and the dispersion coefficient of the eleventh lens is v11, wherein: 36≤v1≤37, 40≤v2≤41, 36≤v3≤37, 36≤v4≤37, 81≤v5≤82, 36≤v6≤37, 81≤v7≤82, 81≤v8≤82, 81≤v9≤82, 36≤v10≤37, and 36≤v11≤37. This embodiment is a preferred embodiment, which improves the imaging quality of the lens by combining different lenses and rationally allocating their dispersion coefficients.

[0062] Further, the thickness of the first lens 1 is G1, 5mm≤G1≤6mm; the thickness of the second lens 2 is G2, 8mm≤G2≤10mm; the thickness of the third lens 3 is G3, 8mm≤G3≤10mm; the thickness of the fourth lens 4 is G4, 4mm≤G4≤5mm; the thickness of the fifth lens 5 is G5, 8mm≤G5≤10mm; the thickness of the sixth lens 6 is G6, 4mm≤G6≤6mm; the thickness of the seventh lens 7 is G7, 8mm≤G7≤10mm; the thickness of the eighth lens 8 is G8, 4mm≤G8≤5mm; the thickness of the ninth lens 9 is G9, 4mm≤G9≤5mm; the thickness of the tenth lens 10 is G10, 8mm≤G10≤10mm; and the thickness of the eleventh lens 11 is G11, 7mm≤G11≤29mm. This embodiment is a preferred embodiment. By reasonably limiting the thickness of each lens, the overall optical length of the lens is controlled, making the overall structure more compact.

[0063] In one embodiment of the present invention, the focal length of the lithography objective 1000 is f, and the total optical length of the lithography objective 1000 is TTL, wherein 0.5 < TTL / f < 0.6. This configuration, by reasonably limiting the relationship between the focal length and the total optical length, ensures that the total optical length of the lithography objective 1000 is confined to a relatively small numerical range, further improving the overall structural compactness.

[0064] In one embodiment of the present invention, the first lens 1, the second lens 2, the third lens 3, the fourth lens 4, the fifth lens 5, the sixth lens 6, the seventh lens 7, the eighth lens 8, the ninth lens 9, the tenth lens 10, and the eleventh lens 11 are all made of spherical lenses. This arrangement, by using spherical lenses for all elements, reduces processing costs while ensuring lens performance, and also reduces assembly sensitivity, thereby improving the yield rate of finished products.

[0065] It should be noted that the basic parameters of the photolithography objective lens 1000 in one embodiment of the present invention are shown in Table 1, where the radius and thickness are in millimeters (mm).

[0066] Table 1

[0067] Face number radius thickness Refractive index Dispersion coefficient surface Infinity 65.56 1 -156.92 5.65 1.62 36.4 2 -51.445 38.93 3 30.148 8.9 1.58 40.9 4 58.981 0.18 5 18.797 9 1.62 36.4 6 11.145 3.45 7 -19.382 4.41 1.62 36.4 8 42.924 4.74 9 -255.093 10 1.49 81.6 10 -22.854 27.08 11 Infinity 1.82 12 (stop) -41.633 4.97 1.62 36.4 13 215.129 2.42 14 105.817 10 1.49 81.6 15 -32.223 10.18 16 79.935 4.3 1.49 81.6 17 -119.034 0.1 18 58.107 4.21 1.49 81.6 19 -246.094 1.94 20 -54.758 8.26 1.62 36.4 21 -1683.597 13.34 22 42.723 8.03 1.62 36.4 23 -270.012 28.13 24 Infinity

[0068] Please refer to Figure 2 The figure shows the MTF curve of the lithography objective lens 1000 in this embodiment at a frequency of 625 lp / mm. It can be seen from the figure that the MTF is greater than 0.45 under different fields of view, indicating good imaging quality.

[0069] Please refer to Figure 3This is a schematic diagram of the defocus curve of the lithography objective lens 1000 in this embodiment at the 625 lp / mm frequency band. As can be seen from the figure, the MTF of the lens's central and peripheral fields of view is almost completely free of defocus, and the lens's astigmatism is well optimized.

[0070] Please refer to Figure 4 This is a SPOT dot plot of the lithography objective lens 1000, from... Figure 4 It can be seen that the image point of this lens is small and the color is more concentrated at different field of view positions, indicating that the image quality is good and the lens has little chromatic aberration.

[0071] Please refer to Figure 5 This is a schematic diagram of the field curvature distortion of the photolithography objective lens 1000 in this embodiment. Different colors represent different wavelengths. For the same color, the right curve represents the meridional direction, and the left curve represents the sagittal field curvature. The diagram shows that the sagittal field curvature of this lens is no greater than 5μm, indicating that this lens can effectively correct field curvature. The other curve in the diagram is the system distortion curve. Distortion does not affect the system's sharpness, but it can cause image distortion by the lens. The optical distortion of this lens is less than 0.15μm.

[0072] In this embodiment, the photolithography objective lens 1000 has a mask exposure field of view of 20mm × 20mm, a scaling ratio of -0.25X, a resolution of 0.8µm, and an overall lens distortion of less than 0.15µm, meeting the requirements of high-precision photolithography machines. The lens adopts a double telecentric structure to reduce magnification and alignment errors caused by changes in the position of the mask and wafer. The exposure spectral line is 365nm, the lens uses i-line material, and the overall transmittance of the lens is high. The image-side numerical aperture of this lens is 0.3, the total optical length is 275.6mm, and the focal length is 495mm. It can be seen that the lens in this embodiment has the characteristics of high resolution, small size, and large numerical aperture.

[0073] The present invention also proposes a microelectronic device, which includes the above-mentioned photolithography objective 1000. Since the microelectronic device includes the photolithography objective 1000, the specific structure of the photolithography objective 1000 is as described in the above embodiments. Since the photolithography objective 1000 of the microelectronic device adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be described in detail here.

[0074] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A photolithography objective lens, characterized in that, The lithography objective lens has an object side and an image side arranged opposite each other along the optical axis. It includes, from the object side to the image side, a first lens with positive optical power, a second lens with positive optical power, a third lens with negative optical power, a fourth lens with negative optical power, a fifth lens with positive optical power, a sixth lens with negative optical power, a seventh lens with positive optical power, an eighth lens with positive optical power, a ninth lens with positive optical power, a tenth lens with negative optical power, an eleventh lens with positive optical power, and an image plane, such that the image-side numerical aperture of the lithography objective lens reaches 0.3, the resolution of the lithography objective lens reaches 0.8 μm, and the total optical length of the lithography objective lens is controlled between 200 mm and 300 mm.

2. The photolithography objective lens as described in claim 1, characterized in that, The focal length of the first lens is f1, the focal length of the second lens is f2, the focal length of the third lens is f3, the focal length of the fourth lens is f4, the focal length of the fifth lens is f5, the focal length of the sixth lens is f6, the focal length of the seventh lens is f7, the focal length of the eighth lens is f8, the focal length of the ninth lens is f9, the focal length of the tenth lens is f10, the focal length of the eleventh lens is f11, and the focal length of the photolithography objective is f, wherein: 0.1<|f1 / f|<0.3, 0.1<|f2 / f|<0.3, 0.1<|f3 / f|<0.3, 0.1<|f4 / f|<0.2, 0.1<|f5 / f|<0.2, 0.1<|f6 / f | 3. The photolithography objective lens as described in claim 1, characterized in that, The photolithography objective also includes an aperture stop, which is located between the fifth lens and the sixth lens.

4. The photolithography objective lens as described in claim 1, characterized in that, The first lens, second lens, third lens, fourth lens, fifth lens, sixth lens, seventh lens, eighth lens, ninth lens, tenth lens, and eleventh lens are all configured as spherical lenses.

5. The photolithography objective lens as described in claim 1, characterized in that, The focal length of the photolithography objective is f, and the total optical length of the photolithography objective is TTL, wherein: 0.5 < TTL / f < 0.

6.

6. The photolithography objective lens as described in claim 1, characterized in that, The object-side radius of the first lens is R11, the image-side radius is R12, -175mm≤R11≤-155mm, and -55mm≤R12≤-45mm; The second lens has an object-side radius of R21 and an image-side radius of R22, where 25mm ≤ R21 ≤ 35mm and 55mm ≤ R22 ≤ 65mm. The third lens has an object-side radius of R31 and an image-side radius of R32, where 15mm ≤ R31 ≤ 20mm and 10mm ≤ R32 ≤ 15mm. The fourth lens has an object-side radius of R41 and an image-side radius of R42, where -25mm≤R41≤-15mm and 40mm≤R42≤50mm. The object-side radius of the fifth lens is R51, the image-side radius is R52, -265mm≤R51≤-245mm, -20mm≤R52≤-25mm; The object-side radius of the sixth lens is R61, the image-side radius is R62, -50mm≤R61≤-35mm, and 200mm≤R62≤220mm. The seventh lens has an object-side radius of R71 and an image-side radius of R72, with 100mm ≤ R71 ≤ 110mm and -35mm ≤ R72 ≤ -30mm. The object-side radius of the eighth lens is R81, the image-side radius is R82, 75mm≤R81≤85mm, and -125mm≤R82≤-110mm; The object-side radius of the ninth lens is R91, the image-side radius is R92, 50mm≤R91≤60mm, and -260mm≤R92≤-240mm; The object-side radius of the tenth lens is R101, the image-side radius is R102, -60mm≤R101≤-50mm, -1700mm≤R102≤-1650mm; The object-side radius of the eleventh lens is R111, and the image-side radius is R112, with 40mm≤R111≤45mm and -280mm≤R112≤-265mm.

7. The photolithography objective lens as described in claim 1, characterized in that, The thickness of the first lens is G1, where 5mm ≤ G1 ≤ 6mm; The thickness of the second lens is G2, where 8mm ≤ G2 ≤ ​​10mm; The thickness of the third lens is G3, where 8mm ≤ G3 ≤ 10mm; The thickness of the fourth lens is G4, where 4mm ≤ G4 ≤ 5mm; The thickness of the fifth lens is G5, where 8mm ≤ G5 ≤ 10mm; The thickness of the sixth lens is G6, where 4mm ≤ G6 ≤ 6mm; The thickness of the seventh lens is G7, where 8mm ≤ G7 ≤ 10mm; The thickness of the eighth lens is G8, where 4mm ≤ G8 ≤ 5mm; The thickness of the ninth lens is G9, where 4mm ≤ G9 ≤ 5mm; The thickness of the tenth lens is G10, where 8mm ≤ G10 ≤ 10mm; The thickness of the eleventh lens is G11, where 7mm ≤ G11 ≤ 29mm.

8. The photolithography objective lens as described in claim 1, characterized in that, The refractive index of the first lens is n1, the refractive index of the second lens is n2, the refractive index of the third lens is n3, the refractive index of the fourth lens is n4, the refractive index of the fifth lens is n5, the refractive index of the sixth lens is n6, the refractive index of the seventh lens is n7, the refractive index of the eighth lens is n8, the refractive index of the ninth lens is n9, the refractive index of the tenth lens is n10, and the refractive index of the eleventh lens is n11, wherein: 1.60≤n1≤1.70, 1.50≤n2≤1.70, 1.60≤n3≤1.70, 1.60≤n4≤1.70, 1.45≤n5≤1.55, 1.60≤n6≤1.70, 1.45≤n7≤1.55, 1.45≤n8≤1.55, 1.45≤n9≤1.55, 1.60≤n10≤1.70, 1.60≤n11≤1.

70.

9. The photolithography objective lens as described in claim 1, characterized in that, The dispersion coefficient of the first lens is v1, the dispersion coefficient of the second lens is v2, the dispersion coefficient of the third lens is v3, the dispersion coefficient of the fourth lens is v4, the dispersion coefficient of the fifth lens is v5, the dispersion coefficient of the sixth lens is v6, the dispersion coefficient of the seventh lens is v7, the dispersion coefficient of the eighth lens is v8, the dispersion coefficient of the ninth lens is v9, the dispersion coefficient of the tenth lens is v10, and the dispersion coefficient of the eleventh lens is v11, wherein: 36≤v1≤37,40≤v2≤41,36≤v3≤37,36≤v4≤37,81≤v5≤82,36≤v6≤37,81≤v7≤82,81≤v8≤82,81≤v9≤82,36≤v10≤37,36≤v11≤37。 10. A microelectronic device, characterized in that, Includes the lithography objective lens as described in any one of claims 1 to 9.

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