A method for assessing the fracture risk of gallium oxide crystals and an electronic device.

Abstract

This invention provides a method and electronic device for assessing the fracture risk of gallium oxide crystals, relating to the field of crystal growth technology. The method includes: acquiring the target geometry of the gallium oxide crystal and, under the target geometry, temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of grid points within the gallium oxide crystal; acquiring the thermal stress tensor of the grid points based on the target geometry, anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data; determining the normal component stress on the target crystal facet based on the thermal stress tensor; acquiring the critical cleavage stress corresponding to the target crystal facet; and determining the fracture risk of the gallium oxide crystal based on the normal component stress and the critical cleavage stress. This invention improves the accuracy of the fracture risk assessment results for gallium oxide crystals.

Description

Technical Field

[0001] This invention relates to the field of crystal growth technology, and in particular to a method for assessing the fracture risk of gallium oxide crystals and an electronic device. Background Technology

[0002] Gallium oxide (Ga2O3) crystals, as semiconductor materials with ultrawide band gaps (e.g., the band gap of β-Ga2O3 is 4.8 eV), have broad application prospects in energy conversion and solar-blind ultraviolet detection.

[0003] In related technologies, large-size gallium oxide crystals are generally grown using the edge-defined film-fed growth method. However, during the growth of gallium oxide crystals, uneven temperature distribution within the crystal can easily lead to stress accumulation. Excessive tensile stress in localized areas can cause brittle fracture, reducing the crystal quality and structural integrity, and increasing the difficulty of growing large-size gallium oxide crystals. Summary of the Invention

[0004] This invention provides a method and electronic device for assessing the fracture risk of gallium oxide crystals, which can solve the problem of brittle fracture of gallium oxide crystals during growth in related technologies.

[0005] In a first aspect, embodiments of the present invention provide a method for assessing the fracture risk of gallium oxide crystals, the method comprising:

[0006] The target geometry of a gallium oxide crystal is obtained, along with the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry. The grid points refer to the grid nodes in each computational grid formed after meshing the gallium oxide crystal under the target geometry.

[0007] Based on the target geometry, the anisotropic thermal expansion tensor, the stiffness matrix, and the temperature distribution data, the thermal stress tensor of the grid points is obtained;

[0008] Based on the thermal stress tensor, determine the normal component stress on the target crystal plane in the gallium oxide crystal;

[0009] Obtain the critical cleavage stress corresponding to the target crystal plane;

[0010] The fracture risk of the gallium oxide crystal is determined based on the normal stress and the critical cleavage stress.

[0011] Secondly, embodiments of the present invention provide an electronic device, including a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to execute the computer program to implement the gallium oxide crystal fracture risk assessment method as described above.

[0012] The fracture risk assessment method for gallium oxide crystals provided in this invention obtains the target geometry of the gallium oxide crystal and acquires the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry. Based on the target geometry, anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data, the thermal stress tensor of the grid points is obtained, thereby systematically analyzing the thermal stress experienced by the gallium oxide crystal during growth. Furthermore, this invention also determines the normal component stress on the target crystal face based on the thermal stress tensor of each grid point in the gallium oxide crystal, and based on the normal component stress on the target crystal face and the... The critical cleavage stress corresponding to the target crystal plane is used to determine the fracture risk of gallium oxide crystals. The influence of the normal component stress on different crystal planes during the growth process of gallium oxide crystals on the brittle fracture of gallium oxide crystals is considered, which improves the accuracy of the assessment results of the fracture risk of gallium oxide crystals determined by the embodiments of the present invention. When the assessment by the embodiments of the present invention determines that gallium oxide crystals have fracture risk, the growth conditions of gallium oxide crystals can be adjusted based on the target crystal plane with fracture risk, which is beneficial to reduce the probability of brittle fracture of gallium oxide crystals during growth, thereby reducing the growth difficulty of large-size gallium oxide crystals and improving the crystal quality and structural integrity of gallium oxide crystals. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a flowchart illustrating the steps of a method for assessing the fracture risk of gallium oxide crystals according to an embodiment of the present invention.

[0015] Figure 2 This is a logic block diagram of a gallium oxide crystal fracture risk assessment device provided in an embodiment of the present invention. Detailed Implementation

[0016] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0017] Method Implementation Examples

[0018] Reference Figure 1 The diagram illustrates a flowchart of a method for assessing the fracture risk of gallium oxide crystals according to an embodiment of the present invention. The method may specifically include the following steps:

[0019] Step S101: Obtain the target geometry of the gallium oxide crystal, as well as the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry.

[0020] Step S102: Obtain the thermal stress tensor of the grid points based on the target geometry, the anisotropic thermal expansion tensor, the stiffness matrix, and the temperature distribution data.

[0021] Step S103: Determine the normal component stress on the target crystal plane in the gallium oxide crystal based on the thermal stress tensor.

[0022] Step S104: Obtain the critical cleavage stress corresponding to the target crystal plane.

[0023] Step S105: Determine the fracture risk of the gallium oxide crystal based on the normal stress and the critical cleavage stress.

[0024] The method for assessing the fracture risk of gallium oxide crystals provided in this invention can be applied to any electronic device capable of numerical simulation. This electronic device may include, but is not limited to, mobile terminals such as laptops, personal digital assistants (PDAs), handheld devices, and computing devices, as well as fixed terminals such as digital TVs and desktop computers.

[0025] Gallium oxide crystals exist in various crystal phases, among which β-gallium oxide crystal (β-Ga2O3) is the most stable crystal phase. The following mainly uses β-Ga2O3 as an example to explain the embodiments of the present invention.

[0026] β-Ga₂O₃ belongs to the monoclinic crystal system with space group C² / m. The monoclinic structure gives β-Ga₂O₃ characteristics such as a wide bandgap (≈4.9 eV) and a high breakdown electric field (≈8 MV / cm). At the same time, there are significant differences in surface free energy between different crystal planes in β-Ga₂O₃, which to a certain extent determines the crack propagation path and brittle failure mode of gallium oxide crystals during brittle fracture. In assessing the fracture risk of gallium oxide crystals, it is necessary not only to systematically analyze the thermal stress on gallium oxide crystals during growth, but also to consider the influence of different crystal planes on the brittle fracture of gallium oxide crystals during growth.

[0027] In step S101: First, the electronic device can determine the target crystallization interface of the gallium oxide crystal by means of a method for determining the crystallization interface of the gallium oxide crystal grown by the guided mode method known in the art. When the target crystallization interface is determined, the geometry of the gallium oxide crystal is also determined. At this time, the electronic device can determine the geometry of the gallium oxide crystal including the target crystallization interface as the target geometry. It can be understood that the target geometry is the three-dimensional geometry of the gallium oxide crystal.

[0028] Then, the electronic device acquires the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry. Here, grid points refer to the grid nodes in each computational grid formed after the gallium oxide crystal under the target geometry is meshed.

[0029] Specifically, in step S101, the electronic device can acquire the positional relationships and dimensional information between various components in the crystal growth furnace used to grow gallium oxide crystals, the gallium oxide melt disposed in the crystal growth furnace, and the gallium oxide crystal grown using the crystal growth furnace. Then, based on the positional relationships and dimensional information, a geometric model is established in a three-dimensional Cartesian coordinate system. In the three-dimensional Cartesian coordinate system, the center point of the bottom of the crystal growth furnace can be taken as the origin (O) of the three-dimensional Cartesian coordinate system, the direction parallel to the growth direction of the gallium oxide crystal can be taken as the z-axis direction of the three-dimensional Cartesian coordinate system, and the growth direction of the gallium oxide crystal is the positive direction of the z-axis. The direction parallel to the thickness direction of the gallium oxide crystal can be taken as the x-axis direction of the three-dimensional Cartesian coordinate system, and the direction parallel to the width direction of the gallium oxide crystal can be taken as the y-axis direction of the three-dimensional Cartesian coordinate system. The positive directions of the x-axis and y-axis can be determined according to actual needs, and this embodiment of the invention does not specifically limit them.

[0030] The thickness direction of the gallium oxide crystal is the direction of the smaller side length of the gallium oxide crystal in the plane formed by the x-axis and y-axis; the width direction of the gallium oxide crystal is the direction of the larger side length of the gallium oxide crystal in the plane formed by the x-axis and y-axis.

[0031] After establishing a geometric model in a three-dimensional Cartesian coordinate system, the electronic device can use a well-known method for determining the crystallization interface of a gallium oxide crystal grown using the guided model method to determine the target crystallization interface, and then determine the target geometry of the gallium oxide crystal including the target crystallization interface. In determining the target crystallization interface of the gallium oxide crystal, the temperature field of the geometric model is obtained through steady-state calculations. This temperature field includes the temperature field of the gallium oxide crystal with the target geometry. In step S101, the electronic device obtains the temperature distribution data of each grid point in the gallium oxide crystal from the temperature field of the gallium oxide crystal with the target geometry in the geometric model. The temperature distribution data of each grid point includes the three-dimensional coordinates of the grid point and the actual temperature of the grid point.

[0032] The anisotropic thermal expansion tensor of grid points is used to characterize the anisotropic thermal expansion properties of grid points in gallium oxide crystals, reflecting the differences in thermal expansion performance of gallium oxide crystals in different directions; the anisotropic thermal expansion tensor of grid points can be expressed as:

[0033] (1)

[0034] in, Represents the anisotropic thermal expansion tensor of the grid points; This represents the thermal expansion component of the anisotropic thermal expansion tensor of the grid points in the ij plane direction. Used to reflect the linear thermal expansion coefficient of the grid point in the ij plane direction, i and j are independently selected from the direction of any coordinate axis in the three-dimensional rectangular coordinate system. Specifically, i can be independently selected from any of the x-axis, y-axis and z-axis directions, and j can be independently selected from any of the x-axis, y-axis and z-axis directions.

[0035] Here, the ij plane represents the plane formed by directions i and j. It should be noted that when the values ​​of i and j are the same, the direction of the ij plane is the axis direction. This represents the unidirectional thermal expansion capacity of a grid point along the principal axis i=j; when the values ​​of i and j are not the same, This indicates the tendency of shear thermal expansion of the grid points in the ij plane direction.

[0036] Furthermore:

[0037] (2)

[0038] Where i and j are independently selected from the directions of any coordinate axis in the three-dimensional Cartesian coordinate system after coordinate transformation; p and q are independently selected from the directions of any coordinate axis in the three-dimensional Cartesian coordinate system before coordinate transformation; This represents the cosine of the angle between the i-direction in the transformed 3D Cartesian coordinate system and the p-direction in the original 3D Cartesian coordinate system. This represents the cosine of the angle between the j-direction in the transformed 3D Cartesian coordinate system and the q-direction in the original 3D Cartesian coordinate system. This represents the thermal expansion component of the anisotropic thermal expansion tensor of the grid points in the pq plane direction.

[0039] In this embodiment of the invention, the grid points in the three-dimensional Cartesian coordinate system before coordinate transformation can be obtained through some basic experiments or existing intrinsic data of gallium oxide crystals. In step S101, the electronic device can first perform coordinate transformation using the above formula 2 to obtain the thermal expansion components of the grid points in the three-dimensional rectangular coordinate system after the coordinate transformation. Then, the anisotropic thermal expansion tensor of each grid point in the gallium oxide crystal under the target geometry is obtained by using the above formula 1.

[0040] In step S101, the electronic device can calculate the stiffness matrix of the grid points using the following formula:

[0041] (3)

[0042] in, This represents the stiffness matrix of the grid points in the three-dimensional Cartesian coordinate system after coordinate transformation. The stiffness matrix of the grid points in the three-dimensional Cartesian coordinate system before coordinate transformation; Represents the coordinate transformation matrix; This represents the transpose of the coordinate transformation matrix.

[0043] coordinate transformation matrix It can be represented as:

[0044] (4)

[0045] in, This indicates that the values ​​obtained from a small number of experiments were... and The elements of the coordinate transformation matrix between the two coordinate axes, n and m, are independently selected from the directions of any coordinate axis in the three-dimensional Cartesian coordinate system.

[0046] In this embodiment of the invention, the stiffness matrix of the grid points in the three-dimensional Cartesian coordinate system before coordinate transformation can be obtained through some basic experiments or existing intrinsic data of gallium oxide crystals. and coordinate transformation matrix Then, by performing coordinate transformation using Formula 3 above, the stiffness matrix of the grid points in the transformed three-dimensional rectangular coordinate system is obtained. And the stiffness matrix of the grid points in the transformed three-dimensional Cartesian coordinate system The stiffness matrix of the mesh points under the target geometry is determined by the step S101.

[0047] In step S102, the electronic device can use a well-known method for calculating the thermal stress tensor to obtain the thermal stress tensor of the grid points based on the target geometry and the anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data of the grid points. Thus, the electronic device can obtain the thermal stress tensor of each grid point in the gallium oxide crystal through step S102. Specifically, the electronic device can obtain the stress balance control equation, thermoelastic constitutive equation, and strain tensor geometric equation corresponding to the grid point based on the anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data of the grid point. It can then simultaneously solve these equations to obtain the thermal stress tensor of that grid point.

[0048] Among them, the stress balance control equation is used to describe the balance relationship between the rate of change of the thermal stress component of the grid point along the coordinate axis of the three-dimensional rectangular coordinate system and the volume force component of the grid point, and then to describe the thermal stress state inside the gallium oxide crystal.

[0049] The thermoelastic constitutive equations can reflect the elastic properties of grid points and are used to establish the relationship between thermal stress and thermal strain at grid points.

[0050] The strain tensor geometric equation is used to establish the relationship between the thermal strain of a grid point and the displacement of the grid point due to thermal strain.

[0051] Specifically, the electronic device can first substitute the geometric equation of strain tensor into the constitutive equation of thermoelasticity to obtain an intermediate equation, then substitute the intermediate equation into the stress balance control equation, and solve the equation to obtain the thermal stress tensor.

[0052] In this embodiment of the invention, the thermal stress tensor of the grid points can be expressed as:

[0053] (5)

[0054] in, Represents the thermal stress tensor at a grid point; This represents the thermal stress component of the thermal stress tensor at a grid point along the ij plane, where i and j are independently selected from the directions of any coordinate axis in a three-dimensional Cartesian coordinate system. It should be noted that when i and j have the same value, the ij plane direction is the axial direction. This represents the normal stress at a grid point along the principal axis i=j; when the values ​​of i and j are not the same, This represents the shear stress generated at the grid point in the ij plane direction.

[0055] In step S103, the electronic device can obtain the normal thermal stress component of the thermal stress tensor of each grid point in the gallium oxide crystal along the normal direction of the target crystal surface according to Schmidt's law, and use it as the normal component normal stress on the target crystal surface.

[0056] Specifically, for any target crystal plane in a gallium oxide crystal, the normal vector of that target crystal plane can be expressed as: , where n1, n2 and n3 are the components of the normal vector of the target crystal plane in the x-axis, y-axis and z-axis directions of the three-dimensional rectangular coordinate system.

[0057] In step S103, according to Schmidt's law, the electronic device first calculates the projection of the thermal stress tensor of the grid points onto the normal direction of the target crystal plane, obtaining the first vector:

[0058] (6)

[0059] in, This represents the first vector, which reflects the thermal stress vector acting on the target crystal plane in the thermal stress tensor. This represents the normal vector of the target crystal plane.

[0060] Then, the projection of the first vector onto the normal direction of the target crystal plane is calculated to obtain the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane:

[0061] (7)

[0062] in, Indicates the normal thermal stress component; This represents the transpose of the normal vector of the target crystal plane.

[0063] In this embodiment of the invention, the target crystal plane is a crystal plane in a gallium oxide crystal, and the number of target crystal planes is at least 1. In some embodiments, the target crystal plane can be a cleavage plane in a gallium oxide crystal. A cleavage plane refers to a smooth plane formed when a gallium oxide crystal breaks along a specific crystallization direction under external force. In this embodiment of the invention, the cleavage plane of a gallium oxide crystal is a crystal plane with weak atomic bonding force or low cleavage energy. The cleavage plane of a gallium oxide crystal usually corresponds to the direction with high atomic plane density and large interplanar spacing, and the surface energy of the cleavage plane is low.

[0064] The cleavage planes of β-Ga2O3 include the (100) crystal plane and the (001) crystal plane. In step S103, the (100) crystal plane and the (001) crystal plane can be used as the target crystal planes of the gallium oxide crystal. According to Schmidt's law, the normal component stress of the (100) crystal plane and the normal component stress of the (001) crystal plane are obtained respectively.

[0065] During the growth of gallium oxide crystals, under the influence of a thermal field, gallium oxide crystals will expand or contract. When gallium oxide crystals contract, the target crystal plane in the gallium oxide crystal will be subjected to tensile stress along the normal direction of the target crystal plane. After the tensile stress increases to a certain extent, it will cause the gallium oxide crystal to undergo brittle fracture along the target crystal plane.

[0066] In this embodiment of the invention, before step S104, the minimum tensile stress along the normal direction of a gallium oxide crystal when it undergoes brittle fracture along different crystal planes can be determined through a large number of experiments. The minimum tensile stress is then determined as the critical cleavage stress corresponding to the crystal plane. Based on the crystal plane and the critical cleavage stress corresponding to the crystal plane, a one-to-one correspondence between the crystal plane and the critical cleavage stress in the gallium oxide crystal is established and the correspondence is stored in a preset storage area.

[0067] In step S104, the electronic device can obtain the critical cleavage stress corresponding to each target crystal plane from the preset storage area.

[0068] In step S105, the electronic device can compare the normal component stress on the target crystal face with the critical cleavage stress corresponding to the target crystal face; if the normal component stress on the target crystal face is greater than or equal to the critical cleavage stress corresponding to the target crystal face, the electronic device can determine that there is a risk of fracture at the target crystal face of the gallium oxide crystal; if the normal component stress on each target crystal face of the gallium oxide crystal is less than the critical cleavage stress corresponding to the target crystal face, the electronic device can determine that there is no risk of fracture of the gallium oxide crystal.

[0069] In the absence of a risk of breakage in the gallium oxide crystal, the electronic device can repeatedly execute the operations corresponding to steps S101 to S105 according to a preset cycle to achieve continuous monitoring of the risk of breakage in the gallium oxide crystal.

[0070] In some embodiments, when there is a risk of fracture at the target crystal face of the gallium oxide crystal, the electronic device can output a prompt message to inform relevant personnel that there is a risk of fracture at the target crystal face of the gallium oxide crystal, so that relevant personnel can adjust the growth conditions of the gallium oxide crystal based on the target crystal face with fracture risk, thereby reducing the probability of brittle fracture of the gallium oxide crystal during growth.

[0071] In some embodiments, when there is a risk of fracture at the target crystal plane of the gallium oxide crystal, the electronic device can execute a preset program to adjust the growth conditions of the gallium oxide crystal, thereby reducing the probability of brittle fracture of the gallium oxide crystal during growth.

[0072] The methods for adjusting the growth conditions of gallium oxide crystals may include, but are not limited to: 1) adjusting the power distribution of the heating device in the crystal growth furnace and changing the heat preservation structure of the crystal growth furnace to make the temperature distribution in the gallium oxide melt and gallium oxide crystal more uniform and reduce the temperature gradient; 2) reducing the cooling rate of the gallium oxide crystal after the growth of the gallium oxide crystal is completed, so that the gallium oxide crystal has enough time to slowly release the internal thermal stress; 3) adjusting the gas flow rate of the protective gas in the crystal growth furnace; 4) adjusting the composition and proportion of the flux in the gallium oxide melt, thereby changing the growth rate, crystal structure and internal stress state of the gallium oxide crystal, and reducing the probability of brittle fracture of the gallium oxide crystal during the growth process.

[0073] The fracture risk assessment method for gallium oxide crystals provided in this invention obtains the target geometry of the gallium oxide crystal and acquires the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry. Based on the target geometry, anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data, the thermal stress tensor of the grid points is obtained, thereby systematically analyzing the thermal stress experienced by the gallium oxide crystal during growth. Furthermore, this invention also determines the normal component stress on the target crystal face based on the thermal stress tensor of each grid point in the gallium oxide crystal, and based on the normal component stress on the target crystal face and the... The critical cleavage stress corresponding to the target crystal plane is used to determine the fracture risk of gallium oxide crystals. The influence of the normal component stress on different crystal planes during the growth process of gallium oxide crystals on the brittle fracture of gallium oxide crystals is considered, which improves the accuracy of the assessment results of the fracture risk of gallium oxide crystals determined by the embodiments of the present invention. When the assessment by the embodiments of the present invention determines that gallium oxide crystals have fracture risk, the growth conditions of gallium oxide crystals can be adjusted based on the target crystal plane with fracture risk, which is beneficial to reduce the probability of brittle fracture of gallium oxide crystals during growth, thereby reducing the growth difficulty of large-size gallium oxide crystals and improving the crystal quality and structural integrity of gallium oxide crystals.

[0074] In an optional embodiment, step S103, which involves determining the normal component stress on the target crystal plane in the gallium oxide crystal based on the thermal stress tensor, includes:

[0075] Step S1031: Based on the thermal stress tensor, obtain the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane.

[0076] Step S1032: Determine the normal thermal stress component as the normal stress component experienced by the target crystal plane.

[0077] In this embodiment of the invention, during the process of determining the normal component of the normal stress on the target crystal face in a gallium oxide crystal, the electronic device can obtain the normal thermal stress component of the thermal stress tensor of the grid points along the normal direction of the target crystal face, and determine this normal thermal stress component as the normal component of the normal stress on the target crystal face. The normal component of the normal stress on the target crystal face determined in this way can directly reflect the actual stress state of the target crystal face in its normal direction, improve the matching degree between the thermal stress analysis process of the gallium oxide crystal and the crystal structure of gallium oxide in this embodiment of the invention, and thus help improve the accuracy of the fracture risk of gallium oxide crystal determined based on the normal component of the normal stress on the target crystal face and the critical cleavage stress.

[0078] In step S1031, the electronic device can first calculate the projection of the thermal stress tensor of the grid point onto the normal direction of the target crystal plane using formula 6 to obtain the first vector, and then calculate the projection of the first vector onto the normal direction of the target crystal plane using formula 7 to obtain the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane.

[0079] The electronic device can obtain the normal thermal stress component of the thermal stress tensor of each grid point in the gallium oxide crystal along the normal direction of the target crystal plane by repeatedly executing step S1031.

[0080] In step S1032, the electronic device can determine the normal thermal stress component obtained in step S1031 as the normal stress component of the target crystal plane.

[0081] It is understandable that when the number of target crystal planes is greater than 1, the electronic device can repeatedly execute the operations corresponding to steps S1031 and S1032 to obtain the normal stress component of each target crystal plane.

[0082] In an optional embodiment, step S1031, which involves obtaining the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane, includes:

[0083] Step A11: Based on the thermal stress tensor, obtain the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane, wherein the normal thermal stress component is:

[0084] (8)

[0085] in, This represents the normal thermal stress component; The vector representing the normal to the target crystal plane; This represents the thermal stress tensor of the grid point.

[0086] The fracture risk assessment method for gallium oxide crystals provided in this invention calculates the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane using the above formula 8. This achieves a deep coupling between physical laws and the characteristics of gallium oxide crystals. It not only improves the accuracy of thermal stress analysis of grid points in gallium oxide crystals but also effectively enhances the comprehensiveness of thermal stress analysis of grid points in gallium oxide crystals. This further improves the accuracy of determining the fracture risk of gallium oxide crystals based on the normal component and critical cleavage stress of the target crystal plane.

[0087] In an optional embodiment, step S105, which determines the fracture risk of the gallium oxide crystal based on the normal stress and the critical cleavage stress, includes:

[0088] Step S1051: When the number of target crystal planes in the gallium oxide crystal is 1, determine a first reference range based on the critical cleavage stress.

[0089] Step S1052: If the normal stress falls within the first reference range, it is determined that the gallium oxide crystal has a risk of fracture at the target crystal plane.

[0090] Step S1053: If the normal stress component does not fall within the first reference range, then it is determined that the gallium oxide crystal is not at risk of fracture.

[0091] In an embodiment of the present invention, in an application scenario where the number of target crystal planes in a gallium oxide crystal is 1, an electronic device can determine the fracture risk of the gallium oxide crystal through the operations corresponding to steps S1051 to S1053.

[0092] In step S1051, the electronic device can determine a first reference range based on the critical cleavage stress corresponding to the target crystal plane. The first reference range includes the critical cleavage stress corresponding to the target crystal plane.

[0093] In some embodiments, the critical cleavage stress corresponding to the target crystal plane is used as the lower limit of the first reference range, and the upper limit of the first reference range is positive infinity. The first reference range can be expressed as [critical cleavage stress, +∞). In some embodiments, the lower limit of the first reference range is less than the critical cleavage stress corresponding to the target crystal plane, and the upper limit of the first reference range is positive infinity. The first reference range can be expressed as [a times the critical cleavage stress, +∞), where a is greater than 0 and less than 1.

[0094] If the first reference range is determined by step S1051, the electronic device can match each normal component stress on the target crystal surface with the first reference range. If any normal component stress on the target crystal surface falls within the first reference range, the electronic device executes step S1052 to determine that there is a risk of fracture at the target crystal surface of the gallium oxide crystal. If none of the normal component stresses on the target crystal surface fall within the first reference range, the electronic device executes step S1053 to determine that there is no risk of fracture at the gallium oxide crystal.

[0095] It is understandable that the normal component of the target crystal plane refers to the normal thermal stress component of the thermal stress tensor of each grid point in the gallium oxide crystal along the normal direction of the target crystal plane.

[0096] The normal component stress falling within the first reference range means that the normal component stress is equal to any value within the first reference range; the normal component stress not falling within the first reference range means that the normal component stress is not equal to any value within the first reference range.

[0097] The gallium oxide crystal fracture risk assessment method provided in this invention, when the number of target crystal faces in the gallium oxide crystal is one, firstly determines a first reference range based on the critical cleavage stress. If any normal component stress on the target crystal face falls within the first reference range, it is determined that the gallium oxide crystal has a fracture risk at the target crystal face. If none of the normal component stresses on the target crystal face fall within the first reference range, it is determined that the gallium oxide crystal has no fracture risk. This method more comprehensively covers scenarios where the gallium oxide crystal has a fracture risk at the target crystal face, and improves the accuracy of the fracture risk assessment results of the gallium oxide crystal determined by the electronic device in application scenarios where the number of target crystal faces is one.

[0098] In an optional embodiment, step S105, which determines the fracture risk of the gallium oxide crystal based on the normal stress and the critical cleavage stress, includes:

[0099] Step S1054: If the number of target crystal faces in the gallium oxide crystal is greater than 1, calculate the ratio of the normal component stress on each target crystal face in the gallium oxide crystal to the critical cleavage stress corresponding to the target crystal face.

[0100] Step S1055: Obtain the second reference range corresponding to the gallium oxide crystal.

[0101] Step S1056: If the ratio falls within the second reference range, it is determined that the gallium oxide crystal has a risk of fracture at the target crystal plane.

[0102] Step S1057: If the ratio of the normal component stress on each target crystal face in the gallium oxide crystal to the critical cleavage stress corresponding to the target crystal face does not fall within the second reference range, then it is determined that the gallium oxide crystal has no risk of fracture.

[0103] In this embodiment of the invention, in application scenarios where the number of target crystal faces in a gallium oxide crystal is greater than 1, the electronic device can determine the fracture risk of the gallium oxide crystal through the operations corresponding to steps S1054 to S1057.

[0104] Specifically, in step S1054, the electronic device can calculate the ratio between the normal component stress on each target crystal plane in the gallium oxide crystal and the critical cleavage stress corresponding to that target crystal plane:

[0105] (9)

[0106] in, It represents the ratio of the normal component stress on the target crystal plane to the critical cleavage stress corresponding to that target crystal plane; This represents the normal component stress acting on the target crystal plane; This represents the critical cleavage stress corresponding to the target crystal plane.

[0107] In this embodiment of the invention, when the ratio between the normal component stress on the target crystal face and the critical cleavage stress corresponding to the target crystal face is equal to 1, the normal component stress on the target crystal face is equal to the critical cleavage stress corresponding to the target crystal face. The larger the ratio between the normal component stress on the target crystal face and the critical cleavage stress corresponding to the target crystal face, the greater the normal component stress on the target crystal face, and the greater the risk of gallium oxide crystal fracture at the target crystal face.

[0108] In step S1055, the second reference range acquired by the electronic device includes 1. In some embodiments, the lower limit of the second reference range is 1, the upper limit of the second reference range is positive infinity, and the second reference range can be represented as [1, +∞). In some embodiments, the lower limit of the second reference range is less than 1, the upper limit of the second reference range is positive infinity, and the second reference range can be represented as [b, +∞), where b is greater than 0 and less than 1. In some embodiments, the lower limit of the second reference range is less than 1, the upper limit of the second reference range is greater than 1, and the second reference range can be represented as [b, c], where b is greater than 0 and less than 1, and c is any value greater than 1.

[0109] After obtaining the ratio of the normal component stress on each target crystal face of the gallium oxide crystal to the critical cleavage stress corresponding to that target crystal face through step S1054, and obtaining the second reference range through step S1055, the electronic device can match the ratio obtained through step S1054 with the second reference range. If the ratio of the normal component stress on the target crystal face to the critical cleavage stress corresponding to that target crystal face falls within the second reference range, the electronic device executes step S1056 to determine that there is a risk of fracture at that target crystal face of the gallium oxide crystal. If the ratio of the normal component stress on each target crystal face of the gallium oxide crystal to the critical cleavage stress corresponding to that target crystal face does not fall within the second reference range, the electronic device executes step S1057 to determine that there is no risk of fracture at that target crystal face of the gallium oxide crystal.

[0110] As an optional implementation, after obtaining the ratio of the normal component stress on each target crystal face of the gallium oxide crystal to the critical cleavage stress corresponding to that target crystal face through step S1054, and obtaining the second reference range through step S1055, the electronic device first determines the maximum value among the ratios of the normal component stress on each target crystal face of the gallium oxide crystal to the critical cleavage stress corresponding to that target crystal face calculated through step S1054:

[0111] (10)

[0112] in, This represents the maximum value of the ratio of the normal component stress on each target crystal plane in a gallium oxide crystal to the critical cleavage stress corresponding to that target crystal plane; This represents the normal component stress on any target crystal plane in a gallium oxide crystal; The normal component stress in a gallium oxide crystal is represented as... The critical cleavage stress corresponding to the target crystal plane, where d can be any value within the third reference range, the lower limit of the third reference range is 1, and the upper limit of the third reference range is the total number of target crystal planes in the gallium oxide crystal. The third reference range can be expressed as [1, the total number of target crystal planes in the gallium oxide crystal].

[0113] Then, the electronic device will reach the maximum value. Match with the second reference range; if the maximum value If the value falls within the second reference range, the electronic device determines that the gallium oxide crystal is at risk of breakage; if the maximum value is reached... Since it did not fall within the second reference range, the electronic device determined that there was no risk of breakage in the gallium oxide crystal.

[0114] The gallium oxide crystal fracture risk assessment method provided in this invention, when the number of target crystal faces in the gallium oxide crystal is greater than 1, first calculates the ratio of the normal component stress on each target crystal face to the critical cleavage stress corresponding to that target crystal face. If the ratio falls within a second reference range, it is determined that the gallium oxide crystal has a fracture risk at that target crystal face. If the ratio of the normal component stress on each target crystal face to the critical cleavage stress corresponding to that target crystal face does not fall within the second reference range, it is determined that the gallium oxide crystal has no fracture risk. This method more comprehensively covers scenarios where gallium oxide crystals have a fracture risk at target crystal faces, improving the accuracy of the fracture risk assessment results of gallium oxide crystals determined by electronic devices in application scenarios where the number of target crystal faces is greater than 1.

[0115] In an optional embodiment, step S102, which involves obtaining the thermal stress tensor of the grid points based on the target geometry, the anisotropic thermal expansion tensor, the stiffness matrix, and the temperature distribution data, includes:

[0116] Step S1021: Determine the first correlation between the thermal stress and thermal strain of the grid points based on the anisotropic thermal expansion tensor, the stiffness matrix, and the temperature distribution data.

[0117] Step S1022: Obtain the second correlation between the thermal strain and displacement of the grid points under the target geometry.

[0118] Step S1023: Obtain the stress balance relationship of the grid points under the target geometry.

[0119] Step S1024: Determine the thermal stress tensor of the grid point based on the first correlation relationship, the second correlation relationship, and the stress balance relationship.

[0120] In this embodiment of the invention, during the process of acquiring the thermal stress tensor of the grid points, the electronic device can determine the first correlation between the thermal stress and thermal strain of the grid points based on the anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data of the grid points. This incorporates the intrinsic stiffness matrix and anisotropic thermal expansion tensor of the gallium oxide crystal into the calculation of the thermal stress tensor. Furthermore, it acquires the second correlation between the thermal strain and displacement of the grid points, thereby transforming the microscopic displacement differences caused by the macroscopic temperature distribution of the gallium oxide crystal into calculable thermal strain. This improves the consistency between the distribution of thermal strain and the actual deformation state of the gallium oxide crystal. Finally, the thermal stress tensor of the grid points is determined based on the first correlation, the second correlation, and the stress balance relationship of the grid points. This improves the fidelity and reliability of the thermal stress tensor, thereby enhancing the accuracy of the normal component stress on the target crystal plane in the gallium oxide crystal determined based on the thermal stress tensor. Finally, it improves the accuracy and reliability of the fracture risk assessment results of the gallium oxide crystal determined in this embodiment of the invention.

[0121] Specifically, in step S1021, the electronic device determines that the first correlation between the thermal stress and thermal strain of the grid points follows the generalized Hooke's law based on the anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data. This incorporates the intrinsic stiffness matrix and anisotropic thermal expansion tensor of the gallium oxide crystal into the calculation, avoiding the underestimation or overestimation of the thermal stress on different crystal planes in the gallium oxide crystal caused by the averaging method in the isotropic assumption. This, in turn, helps to improve the fidelity and reliability of the thermal stress tensor of the grid points determined by the electronic device in step S1024 based on the first correlation, the second correlation, and the stress balance relationship.

[0122] Thermal strain is essentially the gradient of displacement of grid points inside the gallium oxide crystal. In step S1022, the second correlation between the thermal strain and displacement of the grid points obtained by the electronic device is transformed into calculable thermal strain by the microscopic displacement difference caused by the macroscopic temperature distribution of the gallium oxide crystal under the target geometry through the strain-displacement constitutive equation of continuum mechanics. This can improve the fidelity and reliability of the thermal stress tensor of the grid points determined by the electronic device in step S1024 based on the first correlation, the second correlation and the stress balance relationship.

[0123] The displacement of a grid point refers to the displacement of the grid point due to thermal strain under the target geometry. The displacement of the grid point due to thermal strain includes linear displacement and angular displacement.

[0124] In step S1023, the stress balance relationship of the grid points under the target geometry, obtained by the electronic device, can be expressed as:

[0125] (11)

[0126] in, Indicates the direction of the coordinate axes in a three-dimensional rectangular coordinate system; The volume force components at the grid points are represented; the expansion of Equation 11 can be expressed as:

[0127] (12)

[0128] (13)

[0129] (14)

[0130] The stress balance relationship is used to describe the balance between the rate of change of the thermal stress component of a grid point along the coordinate axis of the three-dimensional rectangular coordinate system and the volume force component of that grid point, and thus to describe the thermal stress state inside the gallium oxide crystal.

[0131] In step S1023, the electronic device can combine the first correlation relationship, the second correlation relationship, and the stress balance relationship to solve for the thermal stress tensor of the grid points.

[0132] In an optional embodiment, step S1024, determining the thermal stress tensor of the mesh point based on the first correlation relationship, the second correlation relationship, and the stress balance relationship, includes:

[0133] Step B11: Determine the boundary conditions corresponding to the gallium oxide crystal under the target geometry.

[0134] Step B12: Based on the boundary conditions, solve the first correlation relationship, the second correlation relationship, and the stress balance relationship simultaneously to obtain the thermal stress tensor of the grid points.

[0135] In this embodiment of the invention, during the process of determining the thermal stress tensor of the grid points based on the first correlation relationship, the second correlation relationship, and the stress balance relationship, the electronic device can determine the boundary conditions corresponding to the gallium oxide crystal under the target geometry through step B11. Then, based on the boundary conditions, it can simultaneously solve the first correlation relationship, the second correlation relationship, and the stress balance relationship to obtain the thermal stress tensor of the grid points. Thus, by coupling the physical relationship between the thermal stress and thermal strain of the grid points in the gallium oxide crystal and the displacement of the grid points due to thermal strain, a complete mathematical system for solving the anisotropic thermal stress problem of the grid points in the gallium oxide crystal is constructed. This not only further improves the accuracy of the thermal stress tensor of the grid points but also improves the feasibility of this embodiment of the invention.

[0136] In step B11, the boundary conditions determined by the electronic device include free boundaries and fixed constraint boundaries; wherein, the free boundaries are:

[0137] (15)

[0138] Represents the normal vector on the free boundary surface; The components of thermal stress at grid points on the free boundary are represented by i and j, which are independently selected from the directions of any coordinate axis in the three-dimensional Cartesian coordinate system.

[0139] The fixed constraint boundary is:

[0140] , (16)

[0141] This represents the linear displacement of a grid point along the i-direction on a fixed constraint boundary; This represents the angular displacement of a grid point on a fixed constraint boundary relative to the i-direction.

[0142] In an optional embodiment, step S1021, which involves determining the first correlation between the thermal stress and thermal strain at the grid points based on the anisotropic thermal expansion tensor, the stiffness matrix, and the temperature distribution data, includes:

[0143] Step C11: Based on the temperature distribution data, determine the temperature difference between the actual temperature and the reference temperature of the grid point.

[0144] Step C12: Determine the first correlation between the thermal stress and thermal strain of the grid points based on the temperature difference, the anisotropic thermal expansion tensor, and the stiffness matrix.

[0145] In this embodiment of the invention, the electronic device can determine the first correlation between the thermal stress and thermal strain of the grid points through the operations corresponding to steps C11 to C12.

[0146] Specifically, in step C11, the electronic device can determine the actual temperature of the grid points based on the temperature distribution data of the grid points, and then calculate the difference between the actual temperature and the reference temperature to obtain the temperature difference between the actual temperature and the reference temperature of the grid points:

[0147] (17)

[0148] in, This represents the temperature difference between the actual temperature and the reference temperature at a grid point. This indicates the actual temperature of the grid points; The reference temperature is indicated. In this embodiment of the invention, the reference temperature can be the melting point of gallium oxide crystal, 2080 K.

[0149] In step C12, the electronic device determines the first correlation between thermal stress and thermal strain at the mesh points based on the temperature difference, the anisotropic thermal expansion tensor, and the stiffness matrix:

[0150] (18)

[0151] in, This represents the thermal stress component of the thermal stress tensor at the grid point in the ij plane direction. This represents the stiffness components of the stiffness matrix of the grid points in the ij plane direction; This represents the thermal strain component of the grid point in the ij plane direction; This represents the thermal expansion component of the anisotropic thermal expansion tensor of the grid points in the ij plane direction; This represents the temperature difference between the actual temperature and the reference temperature at a grid point.

[0152] It should be noted that when i and j have the same value, the direction of the ij plane is the direction of the axis. This represents the positive stiffness of a grid point along the principal axis i=j; when the values ​​of i and j are not the same, This represents the shear stiffness generated by the grid points in the ij plane direction.

[0153] Similarly, when i and j have the same value, This represents the normal strain at a grid point along the principal axis i=j; when the values ​​of i and j are not the same, This represents the shear strain generated at the grid point in the ij plane direction.

[0154] In an optional embodiment, step S1022, obtaining the second correlation between the thermal strain and displacement of the mesh points under the target geometry, includes:

[0155] Step D11: Obtain the displacement gradient of the grid points under the target geometry.

[0156] Step D12: Based on the displacement gradient, determine the second correlation between the thermal strain of the grid point and the displacement of the grid point.

[0157] In this embodiment of the invention, the electronic device can obtain the second correlation between the thermal strain and the displacement of the grid points in the gallium oxide crystal under the target geometry through the operations corresponding to steps D11 to D12.

[0158] Specifically, in step D11, the electronic device can first obtain the displacement of the grid points under the target geometry, and then obtain the displacement gradient of the grid points based on the displacement.

[0159] The displacement of the grid point describes the distance and direction between the grid point and its position after deformation due to thermal strain. The displacement of the grid point can be expressed as:

[0160] (19)

[0161] in, Indicates the displacement of grid points; This represents the displacement of a grid point along the x-axis. This represents the displacement of a grid point along the y-axis. This represents the displacement of a grid point along the z-axis.

[0162] The displacement gradient of a grid point refers to the first-order partial derivative matrix of the grid point's displacement with respect to its spatial coordinates.

[0163] (20)

[0164] in, This represents the displacement gradient of the grid points; This represents the first-order partial derivative of the displacement of a grid point along the i-direction with respect to the j-direction, where i and j are independently selected from the directions of any coordinate axis in a three-dimensional Cartesian coordinate system.

[0165] In step D12, the electronic device determines a second correlation between the thermal strain and displacement of the grid points based on the displacement gradient of the grid points, which can be expressed as:

[0166] (twenty one)

[0167] in, This represents the thermal strain component of the grid point in the ij plane direction; This represents the first-order partial derivative of the displacement of a grid point along the j-direction with respect to the i-direction.

[0168] The expansion of Formula 21 can be expressed as:

[0169] (twenty two)

[0170] (twenty three)

[0171] (twenty four)

[0172] (25)

[0173] (26)

[0174] (27)

[0175] In summary, the gallium oxide crystal fracture risk assessment method provided by this invention obtains the target geometry of the gallium oxide crystal and acquires the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry. Based on the target geometry, anisotropic thermal expansion tensor, stiffness matrix, and temperature distribution data, the thermal stress tensor of the grid points is obtained, thereby systematically analyzing the thermal stress experienced by the gallium oxide crystal during growth. Furthermore, this invention also determines the normal component stress on the target crystal face of the gallium oxide crystal based on the thermal stress tensor of each grid point in the gallium oxide crystal, and based on the normal component stress on the target crystal face... The critical cleavage stress corresponding to the target crystal plane is used to determine the fracture risk of gallium oxide crystal. The influence of the normal component stress on different crystal planes during the growth process of gallium oxide crystal on the brittle fracture of gallium oxide crystal is considered, which improves the accuracy of the assessment results of the fracture risk of gallium oxide crystal determined by the embodiments of the present invention. When the gallium oxide crystal is determined to have a fracture risk through the assessment of the embodiments of the present invention, the growth conditions of gallium oxide crystal can be adjusted based on the target crystal plane with fracture risk, which is beneficial to reduce the probability of brittle fracture of gallium oxide crystal during growth, thereby reducing the growth difficulty of large-size gallium oxide crystal and improving the crystal quality and structural integrity of gallium oxide crystal.

[0176] Device Examples

[0177] Reference Figure 2 The diagram shows a logic block diagram of a gallium oxide crystal fracture risk assessment device provided by the present invention. The device may include:

[0178] The first acquisition module 201 is used to acquire the target geometry of the gallium oxide crystal, as well as the temperature distribution data, anisotropic thermal expansion tensor, and stiffness matrix of the grid points in the gallium oxide crystal under the target geometry; the grid points refer to the grid nodes in each computational grid formed after the gallium oxide crystal under the target geometry is meshed.

[0179] The second acquisition module 202 is used to acquire the thermal stress tensor of the grid points based on the target geometry, the anisotropic thermal expansion tensor, the stiffness matrix and the temperature distribution data.

[0180] The first determining module 203 is used to determine the normal component stress on the target crystal plane in the gallium oxide crystal based on the thermal stress tensor.

[0181] The third acquisition module 204 is used to acquire the critical cleavage stress corresponding to the target crystal plane;

[0182] The second determining module 205 is used to determine the fracture risk of the gallium oxide crystal based on the normal stress and the critical cleavage stress.

[0183] Optionally, the first determining module includes:

[0184] The first acquisition submodule is used to acquire the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane based on the thermal stress tensor.

[0185] The first determining submodule is used to determine the normal thermal stress component as the normal stress component subjected to the target crystal plane.

[0186] Optionally, the first acquisition submodule includes:

[0187] The first acquisition unit is configured to acquire, based on the thermal stress tensor, the normal thermal stress component of the thermal stress tensor along the normal direction of the target crystal plane, wherein the normal thermal stress component is:

[0188] ;

[0189] in, This represents the normal thermal stress component; The vector representing the normal to the target crystal plane; This represents the thermal stress tensor of the grid point.

[0190] Optionally, the second determining module includes:

[0191] The second determining submodule is used to determine a first reference range based on the critical cleavage stress when the number of target crystal planes in the gallium oxide crystal is 1.

[0192] The third determining submodule is used to determine that the gallium oxide crystal has a risk of fracture at the target crystal plane if the normal stress falls within the first reference range.

[0193] The fourth determining submodule is used to determine that the gallium oxide crystal is not at risk of fracture if the normal stress does not fall within the first reference range.

[0194] Optionally, the second determining module includes:

[0195] The calculation submodule is used to calculate the ratio of the normal component stress on each target crystal face in the gallium oxide crystal to the critical cleavage stress corresponding to the target crystal face when the number of target crystal faces in the gallium oxide crystal is greater than 1.

[0196] The second acquisition submodule is used to acquire the second reference range corresponding to the gallium oxide crystal;

[0197] The fifth determining submodule is used to determine that the gallium oxide crystal has a risk of breakage at the target crystal plane if the ratio falls within the second reference range;

[0198] The sixth determining submodule is used to determine that the gallium oxide crystal has no risk of fracture if the ratio of the normal component stress on each target crystal face in the gallium oxide crystal to the critical cleavage stress corresponding to the target crystal face does not fall within the second reference range.

[0199] Optionally, the second acquisition module includes:

[0200] The seventh determination submodule is used to determine the first correlation between the thermal stress and thermal strain of the grid points based on the anisotropic thermal expansion tensor, the stiffness matrix and the temperature distribution data;

[0201] The third acquisition submodule is used to acquire a second correlation between the thermal strain and the displacement of the grid point under the target geometry; the displacement of the grid point refers to the displacement of the grid point due to thermal strain under the target geometry.

[0202] The fourth acquisition submodule is used to acquire the stress balance relationship of the grid points under the target geometry;

[0203] The eighth determination submodule is used to determine the thermal stress tensor of the grid points based on the first association relationship, the second association relationship, and the stress balance relationship.

[0204] Optionally, the eighth determining submodule includes:

[0205] The first determining unit is used to determine the boundary conditions corresponding to the gallium oxide crystal under the target geometry; wherein the boundary conditions include free boundaries and fixed constraint boundaries, and the free boundaries are: , This represents the normal vector on the free boundary surface. The thermal stress components at the grid points on the free boundary are represented by i and j, which are independently selected from the directions of any coordinate axis in the three-dimensional Cartesian coordinate system. The fixed constraint boundary is: , , This represents the linear displacement of a grid point along the i-direction on a fixed constraint boundary. This represents the angular displacement of a grid point on the fixed constraint boundary relative to the i-direction;

[0206] The calculation unit is used to solve the first correlation relationship, the second correlation relationship, and the stress balance relationship simultaneously based on the boundary conditions to obtain the thermal stress tensor of the grid point.

[0207] Optionally, the seventh determining submodule includes:

[0208] The second determining unit is used to determine the temperature difference between the actual temperature and the reference temperature of the grid point based on the temperature distribution data.

[0209] The third determining unit is used to determine the first correlation between the thermal stress and thermal strain of the grid points based on the temperature difference, the anisotropic thermal expansion tensor, and the stiffness matrix.

[0210] Optionally, the third acquisition submodule includes:

[0211] The second acquisition unit is used to acquire the displacement gradient of the grid points under the target geometry;

[0212] The third determining unit is used to determine a second correlation between the thermal strain of the grid point and the displacement of the grid point based on the displacement gradient.

[0213] As the apparatus embodiment is basically similar to the method embodiment, it is described in a relatively simple manner. For relevant details, please refer to the description of the method embodiment.

[0214] This invention provides an electronic device including a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the gallium oxide crystal fracture risk assessment method as described above.

[0215] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0216] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0217] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0218] The present invention provides a detailed description of a method for assessing the fracture risk of gallium oxide crystals and an electronic device. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, those skilled in the art will recognize that there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for evaluating a risk of breakage of a gallium oxide crystal, characterized by, The method comprises: acquiring a target geometry of a gallium oxide crystal, and temperature distribution data of grid points in the gallium oxide crystal under the target geometry, an anisotropic thermal expansion tensor and a stiffness matrix; the grid points refer to grid nodes in each calculation grid formed after grid division of the gallium oxide crystal under the target geometry; acquiring a thermal stress tensor of the grid points according to the target geometry, the anisotropic thermal expansion tensor, the stiffness matrix and the temperature distribution data; determining a normal component of normal stress suffered by a target crystal face in the gallium oxide crystal according to the thermal stress tensor; acquiring a critical cleavage stress corresponding to the target crystal face; determining a fracture risk of the gallium oxide crystal based on the normal component of normal stress and the critical cleavage stress; wherein the determining of the normal component of normal stress suffered by the target crystal face in the gallium oxide crystal according to the thermal stress tensor comprises: According to the thermal stress tensor, a normal thermal stress component of the thermal stress tensor along a normal direction of a target crystal face is obtained, and the normal thermal stress component is: ; wherein, represents the normal thermal stress component; represents a normal vector of the target crystal face; represents the thermal stress tensor of the grid point; determining the normal thermal stress component as the normal component of normal stress suffered by the target crystal face; the determining of the fracture risk of the gallium oxide crystal based on the normal component of normal stress and the critical cleavage stress comprises: in a case where the number of target crystal faces in the gallium oxide crystal is 1, determining a first reference range according to the critical cleavage stress; if the normal component of normal stress falls into the first reference range, it is determined that the gallium oxide crystal has a fracture risk at the target crystal face; if the normal component of normal stress does not fall into the first reference range, it is determined that the gallium oxide crystal has no fracture risk; in a case where the number of target crystal faces in the gallium oxide crystal is greater than 1, calculating a ratio of the normal component of normal stress suffered by each target crystal face in the gallium oxide crystal to the critical cleavage stress corresponding to the target crystal face; acquiring a second reference range corresponding to the gallium oxide crystal; if the ratio falls into the second reference range, it is determined that the gallium oxide crystal has a fracture risk at the target crystal face; if the ratio of the normal component of normal stress suffered by each target crystal face in the gallium oxide crystal to the critical cleavage stress corresponding to the target crystal face does not fall into the second reference range, it is determined that the gallium oxide crystal has no fracture risk.

2. The method of claim 1, wherein, the acquiring of the thermal stress tensor of the grid points according to the target geometry, the anisotropic thermal expansion tensor, the stiffness matrix and the temperature distribution data comprises: determining a first correlation between thermal stress and thermal strain of the grid points according to the anisotropic thermal expansion tensor, the stiffness matrix and the temperature distribution data; acquiring a second correlation between thermal strain of the grid points and displacement of the grid points under the target geometry; the displacement of the grid points refers to displacement of the grid points due to thermal strain under the target geometry; acquiring a stress balance relationship of the grid points under the target geometry; determining the thermal stress tensor of the grid points according to the first correlation, the second correlation and the stress balance relationship.

3. The method of claim 2, wherein, The determining the thermal stress tensor of the grid point according to the first correlation relationship, the second correlation relationship and a stress balance relationship comprises: determining a boundary condition corresponding to the gallium oxide crystal under the target geometry; wherein the boundary condition comprises a free boundary and a fixed constraint boundary, the free boundary being: , denotes a normal vector on the free boundary surface, denotes a thermal stress component of a grid point on the free boundary, i and j are independently selected from any coordinate axis in a three-dimensional orthogonal coordinate system, , , denotes a linear displacement of a grid point on the fixed constraint boundary in the i direction, denotes an angular displacement of a grid point on the fixed constraint boundary relative to the i direction. Solving the first correlation relationship, the second correlation relationship and the stress balance relationship simultaneously based on the boundary condition to obtain the thermal stress tensor of the grid point.

4. The method of claim 2, wherein, The determining the first correlation relationship between the thermal stress and the thermal strain of the grid point according to the anisotropic thermal expansion tensor, the stiffness matrix and the temperature distribution data comprises: Determining a temperature difference between an actual temperature of the grid point and a reference temperature according to the temperature distribution data; Determining the first correlation relationship between the thermal stress and the thermal strain of the grid point according to the temperature difference, the anisotropic thermal expansion tensor and the stiffness matrix.

5. The method of claim 2, wherein, The obtaining the second correlation relationship between the thermal strain of the grid point and the displacement of the grid point under the target geometric shape comprises: Obtaining a displacement gradient of the grid point under the target geometric shape; Determining the second correlation relationship between the thermal strain of the grid point and the displacement of the grid point based on the displacement gradient.

6. An electronic device, comprising: The gallium oxide crystal fracture risk assessment method comprises a memory and a processor, the memory is used for storing a computer program, and the processor is used for executing the computer program to realize the gallium oxide crystal fracture risk assessment method according to any one of claims 1 to 5.

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