Ion beam etching method, device, vacuum etching machine, computer device and medium

Abstract

The application relates to the technical field of vacuum etching, in particular to an ion beam etching method and device, a vacuum etching machine, a computer device and a medium. The method comprises the following steps: obtaining target geometric shapes of sample etching and processing requirement information, wherein the processing requirement information comprises target etching depth, incident angle range and uniformity error information; obtaining target etching process parameters according to the processing requirement information; wherein the target etching process parameters comprise target incident angle, target working distance and etching uniformity parameters; planning a motion track of an ion source and / or a sample table according to the target geometric shapes, the target etching process parameters and a motion control function; and controlling the ion source and / or the sample table to move in a scanning etching process according to the motion track. The technical scheme can realize high-uniformity etching processing.

Description

Technical Field

[0001] This application relates to the field of vacuum etching technology, and in particular to a method, apparatus, vacuum etching machine, computer equipment, and computer-readable storage medium based on full-width oblique incidence ion beam etching. Background Technology

[0002] Ion beam etching (IBE) is a high-precision material removal technology that is widely used in semiconductor device manufacturing, optical component processing, and surface modification of new materials.

[0003] To form micro / nano structures at a certain angle relative to the surface normal on a sample, and to control the sidewall tilt angle, ion beam etching often uses oblique incidence etching during the etching process, depending on the process requirements. Figure 1 As shown, Figure 1 This is a schematic diagram of a traditional oblique incidence ion beam single-axis scanning etching method. As can be seen from the diagram, in the oblique incidence single-degree-of-freedom scanning etching method, there are different working distances at the near end, far end and center of the sample. The etching rate differs between the far end and near end of the ion source. The divergence angle of the ion beam itself is uneven, which limits the processing size, throughput and on-wafer consistency, resulting in a decrease in etching uniformity. This is especially true for large-size samples or large-angle oblique incidence etching, where the non-uniformity is more severe. Summary of the Invention

[0004] The purpose of this application is to address one of the aforementioned technical deficiencies by providing an ion beam etching method, apparatus, vacuum etching machine, computer equipment, and computer-readable storage medium to improve the performance of the vacuum etching machine.

[0005] An ion beam etching method, comprising:

[0006] Obtain the target geometry and processing requirements information for sample etching, wherein the processing requirements information includes the target etching depth, incident angle range, and uniformity error information;

[0007] The target etching process parameters are obtained based on the processing requirements information; wherein, the target etching process parameters include: target incident angle, target working distance, and etching uniformity parameters;

[0008] The motion trajectory of the ion source and / or sample stage is planned based on the target geometry, target etching process parameters, and motion control function.

[0009] During the scanning etching process, the ion source and / or sample stage are controlled to move according to the motion trajectory.

[0010] In one embodiment, the ion beam etching method further includes:

[0011] The etching rate distribution function was obtained by using a standard sample and measuring etching depth and time.

[0012] Read the rate mapping table of the ion source; during the etching process, perform beam current distribution detection every set time interval and update the rate mapping table; read the rate mapping table of the ion source and update the rate mapping table.

[0013] The motion trajectory is compensated based on the updated rate mapping table.

[0014] In one embodiment, planning the motion trajectory of the ion source and / or sample stage based on the target geometry, target etching process parameters, and motion control function includes:

[0015] The surface equation of the sample surface is obtained based on the target geometry, and the normal vector at each discrete point on the sample surface is calculated based on the surface equation.

[0016] The incident angle and incident distance formulas for the relative motion between the ion source and the sample stage are determined based on the emission point coordinates of the ion source, the discrete point coordinates of the sample surface, and the normal vector.

[0017] Based on the target etching process parameters and the incident angle formula and incident distance formula, a motion control function is generated, and the motion trajectory of the ion source and / or sample stage is calculated.

[0018] In one embodiment, the incident angle formula includes:

[0019]

[0020]

[0021] The incident distance formula includes:

[0022]

[0023] in, Indicates the angle of incidence. Represents the coordinates of the emission point of the ion source. Represents the coordinates of discrete points on the sample surface. This represents the normal vector of the sample surface. Indicates the incident direction vector. Indicates the incident distance.

[0024] In one embodiment, the motion control function includes:

[0025] If the sample stage undergoes coupled motion, the discrete points on the sample surface sequentially satisfy the function: , Where, the symbol "→" indicates approaching, and t represents a time point. Represents the angle of incidence at time t. Indicates the angle of incidence of the target. This represents the working distance at time t. Indicates the target working distance.

[0026] If the ion source is controlled to rotate, the rotation angle of the ion source satisfies ;in, Indicates the rotation angle.

[0027] In one embodiment, the ion beam etching method further includes:

[0028] Obtain the incident angle deviation and distance deviation values ​​between the sample's surface position and the ion beam incident direction;

[0029] The control parameters of the ion source and / or sample stage are corrected based on the incident angle deviation and distance deviation values.

[0030] In one embodiment, the incident angle deviation value is: ;

[0031] The distance deviation value is: ;

[0032] The expression for the feedback correction is:

[0033] ;

[0034] in, This indicates the incident angle deviation value. Indicates the distance deviation value. , This is the proportional-integral control coefficient. Indicates the correction value. This is a preset deviation function.

[0035] In one embodiment, the control parameters include: parameters for controlling the sample stage to move in two orthogonal directions, parameters for controlling the ion source to rotate around its own center, and / or parameters for controlling the ion source to rotate around the center of the sample stage.

[0036] An ion beam etching apparatus, comprising:

[0037] The requirement acquisition module is used to acquire the target geometry and processing requirement information for sample etching, wherein the processing requirement information includes the target etching depth, incident angle range, and uniformity error information.

[0038] The process acquisition module is used to acquire target etching process parameters based on the processing requirements information; wherein, the target etching process parameters include: target incident angle, target working distance, and etching uniformity parameters;

[0039] The trajectory planning module is used to plan the motion trajectory of the ion source and / or sample stage according to the target geometry, target etching process parameters and motion control function;

[0040] The motion control module is used to control the movement of the ion source and / or sample stage according to the motion trajectory during the scanning etching process.

[0041] A vacuum etching machine includes: an ion source, a sample stage, a motion control system, a vacuum chamber, and a controller;

[0042] The sample stage is used to place the etched sample;

[0043] The ion source is used to emit an ion beam;

[0044] The motion control system is used to drive the ion source and / or sample stage to move.

[0045] The controller is used to control the motion control system using the ion beam etching method described above.

[0046] In one embodiment, the motion control system includes:

[0047] A motion mechanism that drives the sample stage to move in two orthogonal directions, a rotation mechanism that drives the ion source to rotate around its own center to change the incident angle, and / or a swing arm mechanism that drives the ion source to rotate around the center of the sample stage.

[0048] A computer device comprising:

[0049] One or more processors, a memory, and one or more applications, wherein the one or more applications are stored in the memory and configured to be executed by the one or more processors, and the one or more applications are configured to perform the steps of the ion beam etching method described above.

[0050] A computer-readable storage medium storing at least one instruction, at least one program, a code set, or an instruction set, wherein the at least one instruction, the at least one program, the code set, or the instruction set is loaded by the processor and executes the steps of the ion beam etching method described above.

[0051] As described in the above embodiments, the technical solution acquires processing requirement information such as the target geometry of the sample etching, the target etching depth, the incident angle range, and uniformity error information; based on the processing requirement information, it acquires target etching process parameters such as the target incident angle, the target working distance, and etching uniformity parameters; then, based on the target geometry and the target etching process parameters, it calculates the motion trajectory of the controlled object, including the ion source and / or the sample stage, during the scanning etching process; and then, based on the motion trajectory and motion control function, it calculates the corresponding control parameters to control the movement of the ion source and / or the sample stage. This technical solution can automatically generate the motion trajectory of the ion source and / or the sample stage, and achieve adaptive control based on the set motion trajectory, so that different positions on the sample surface pass through the same cross-sectional area of ​​the ion beam during the etching process, improving intra-wafer consistency and batch consistency, reducing the rate difference caused by uneven divergence angle, and achieving high uniformity etching processing. Especially on non-planar samples with curvature in one direction, it can also have good compatibility and etching uniformity.

[0052] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0053] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0054] Figure 1 This is a schematic diagram of a traditional oblique incidence ion beam uniaxial scanning etching method;

[0055] Figure 2 This is a schematic diagram of an example vacuum etching machine structure;

[0056] Figure 3 This is a flowchart of an ion beam etching method according to one embodiment;

[0057] Figure 4 This is a schematic diagram of an example coupled motion sample stage;

[0058] Figure 5 This is a schematic diagram of an example ion source rotating around its own center;

[0059] Figure 6 This is a schematic diagram of an example ion source rotating around the center of the sample stage;

[0060] Figure 7 This is a schematic diagram of an ion beam etching apparatus according to one embodiment;

[0061] Figure 8 This is a block diagram of an example computer device. Detailed Implementation

[0062] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0063] Those skilled in the art will understand that, unless otherwise stated, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the word “comprising” as used in this application’s specification means the presence of the stated feature, integer, step, or operation, but does not preclude the presence or addition of one or more other features, integers, steps, or operations.

[0064] The technical solution of this application solves the problem of uneven etching caused by uneven incident angle and working distance in traditional processes, and is compatible with the etching requirements of large-size, aspherical and unidirectional curvature samples. By planning the motion trajectory, the sample surface is controlled to pass through the same position of the ion beam in sequence, thereby achieving a significant improvement in processing uniformity.

[0065] refer to Figure 2 As shown, Figure 2 This is a schematic diagram of an example vacuum etching machine. The vacuum etching machine provided in this application mainly includes: an ion source 01, a sample stage 02, a motion control system 03, a vacuum chamber 100, and a controller 04. The ion source 01, sample stage 02, and motion control system 03 are installed inside the vacuum chamber 100. The controller 04 connects the ion source 01 and the motion control system 03. The sample stage 02 is used to place the sample to be etched. The ion source 01 is used to emit an ion beam. The motion control system 03 is used to drive the ion source 01 and / or the sample stage 02 to move. The controller 04 executes the ion beam etching method to control the motion control system 03 to operate. For example, the motion control system 03 may include a rotation mechanism 31 mounted on the ion source 01, which can be driven by a built-in motor to rotate the ion source 01. Additionally, it may include a motion mechanism 32 mounted on the sample stage 02, which can move in the xy-plane and move to any coordinate position in the xy-plane.

[0066] refer to Figure 3 As shown, Figure 3 This is a flowchart of an ion beam etching method according to one embodiment, which can be executed by a controller, including:

[0067] S10, acquire the target geometry and processing requirements information for sample etching, wherein the processing requirements information includes the target etching depth, incident angle range, and uniformity error information.

[0068] In this step, for the sample to be etched, the controller needs to obtain processing requirements information in advance, such as the target geometry, target etching depth, incident angle range, and uniformity error information; for example, the target geometry can be imported through CAD files or surface models.

[0069] S20, obtain the target etching process parameters according to the processing requirements information; wherein, the target etching process parameters include: target incident angle, target working distance and etching uniformity parameters.

[0070] In this step, the target etching process parameters for the sample are obtained through processing requirement information, which may include the incident angle. Working distance Parameters such as etching uniformity requirements.

[0071] S30, plan the motion trajectory of the ion source and / or sample stage according to the target geometry, target etching process parameters and motion control function.

[0072] In this step, to ensure the accurate implementation of the full-width oblique incidence etching method of the ion beam, a unified spatial coordinate system is established inside the vacuum cavity. Based on the target geometry and the target etching process parameters, the motion trajectory of the ion source and / or sample stage during the scanning etching process is planned, so as to be used for real-time control of the relative motion between the ion source and the sample stage through parameterized calculation formulas.

[0073] For example, the definition and parameter description of a spatial coordinate system can be as follows:

[0074] 1) Three-dimensional rectangular coordinate system:

[0075] x-axis: along the horizontal direction of the sample stage;

[0076] y-axis: along the length of the ion source strip;

[0077] z-axis: perpendicular to the reference plane of the sample stage.

[0078] 2) Parameter definition:

[0079] Coordinates of discrete points on the sample surface: ;

[0080] Coordinates of the emission point of the ion source: .

[0081] In one embodiment, step S30, which involves planning the motion trajectory of the controlled object during the scanning etching process based on the target geometry and target etching process parameters, may include:

[0082] (1) Obtain the surface equation of the sample surface according to the target geometry, and calculate the normal vector at each discrete point of the sample surface according to the surface equation.

[0083] For example, the controller can perform geometric analysis on the target geometry, such as software extracting surface equations from a CAD model. And calculate the normal vector of discrete points on the sample surface based on the surface equation. .

[0084] (2) Generate motion control functions based on the target etching process parameters and the incident angle formula and incident distance formula, and calculate the motion trajectory of the ion source and / or sample stage.

[0085] Specifically, the formula for the angle of incidence includes:

[0086]

[0087]

[0088] Specifically, the incident distance formula includes:

[0089]

[0090] in, Indicates the angle of incidence. This represents the normal vector of discrete points on the sample surface. Indicates the incident direction vector. Indicates the incident distance.

[0091] For example, the motion control function may include:

[0092] 【1】If the sample stage is coupled and the discrete points on the sample surface successively satisfy the function: , Where, the symbol "→" indicates approaching, and t represents a time point. Represents the angle of incidence at time t. Indicates the angle of incidence of the target. Indicates the working distance at time t. Indicates the target working distance.

[0093] Specifically, when selecting the sample stage for coupled motion, the expression can be: Controlling the trajectory of the sample stage so that the sample points sequentially satisfy... , .

[0094] [2] If the ion source is controlled to rotate, the rotation angle of the ion source satisfies ;in, Indicates the rotation angle.

[0095] Specifically, if the ion source is selected to rotate: The rotation angle of the ion source around its center or its oscillation around the sample stage. It can be obtained from the above function Provided.

[0096] As in the above embodiment, the controller combines the incident angle formula and the incident distance formula to obtain the motion control function, and automatically generates a motion trajectory file of the motion sequence of the sample stage and / or ion source according to the motion control function, which is used to control the motion control system.

[0097] In one embodiment, to achieve more precise control, feedback correction can be used during scanning etching.

[0098] Accordingly, the ion beam etching method of this application can also obtain the incident angle deviation value and distance deviation value between the surface position of the sample and the incident direction of the ion beam; and perform feedback correction on the control parameters of the controlled object based on the incident angle deviation value and distance deviation value.

[0099] Specifically, the controller monitors the difference between the sample surface position and the ion beam direction in real time and calculates the incident angle deviation value: The distance deviation value is: The controller performs feedback correction, and the expression for feedback correction is: ;in, This indicates the incident angle deviation value. Indicates the distance deviation value. , This is the proportional-integral control coefficient. Indicates the correction value. This is a preset deviation function.

[0100] As in the above embodiments, feedback correction is performed through integral control, so that the incident angle and working distance can always be close to the target incident angle and target working distance, thus achieving more precise control.

[0101] S40, during the scanning etching process, the ion source and / or sample stage are controlled to move according to the motion trajectory.

[0102] In this step, the controller can import the motion trajectory file into the motion control system. The motion control system outputs control parameters based on the trajectory file and controls the motor, rotating shaft, and beam aperture mechanism of the ion source of the motion control system to perform real-time scheduling, thereby ensuring that the incident conditions at each point on the sample surface are consistent.

[0103] For example, the controller can control the motor connected to the ion source to rotate the ion source to a calculated rotation angle. The controller can control the xy motion platform connected to the sample stage to adjust the incident angle when the sample stage moves to a specified position. Approximate to the target angle of incidence And make working distance Approaching the target working distance .

[0104] As described in the above embodiments, the technical solution acquires processing requirement information such as the target geometry of the sample etching, the target etching depth, the incident angle range, and the uniformity error information; based on the processing requirement information, it acquires target etching process parameters such as the target incident angle, the target working distance, and the etching uniformity parameters; then, based on the target geometry and the target etching process parameters, it calculates the motion trajectory of the controlled object, including the ion source and / or the sample stage, during the scanning etching process; and then, based on the motion trajectory and the motion control function, it calculates the corresponding control parameters to control the movement of the ion source and / or the sample stage; it can automatically generate the motion trajectory of the ion source and / or the sample stage, and achieve adaptive control based on the set motion trajectory, so that different positions on the sample surface pass through the same cross-sectional area of ​​the ion beam during the etching process, and can also have good compatibility and etching uniformity on non-planar samples with curvature in one direction.

[0105] To make the technical effects of the present application's technical solution clearer, more embodiments are described below.

[0106] In one embodiment, to ensure etching accuracy, the ion beam etching method of this application may further include beam calibration and adjustment of the ion source.

[0107] For example, beam calibration and adjustment methods can be as follows:

[0108] 1) Obtain the etching rate distribution function by using a standard sample and measuring the etching depth and time.

[0109] Specifically, during initial calibration, a standard sample (such as a quartz plate or silicon wafer) can be used to obtain the etching rate distribution function by measuring the etching depth and time. .

[0110] 2) Read the rate mapping table of the ion source. During the etching process, the beam distribution is detected every set time interval, and the rate mapping table is updated. The rate mapping table is used to describe the correspondence between the beam density, implantation energy, implantation angle and other parameters of the ion beam of the ion source in the ion implantation process and the depth distribution, concentration distribution and other characteristics after the interaction with the material surface.

[0111] Specifically, during periodic calibration, beam distribution detection can be performed every fixed interval (e.g., 8 hours) or batch during actual production to update the rate mapping table in the controller.

[0112] 3) Compensate for the motion trajectory based on the updated rate mapping table.

[0113] Specifically, the controller executes a correction algorithm to compensate for the motion trajectory based on the calibration results, so that the etching results meet the uniformity target.

[0114] As described in the above embodiments, beam calibration and adjustment of the ion source can ensure that the vacuum etching machine maintains sufficient etching accuracy during the production process.

[0115] In summary, the technical solution of this application establishes a three-dimensional coordinate system in a vacuum chamber to calculate the relative relationship between the coordinates of points on the sample surface and the position of the ion source in real time; generates a motion control function based on the incident angle formula and the distance formula; controls the relative motion trajectory between the sample stage and the ion source so that each point of the sample passes through the cross-sectional area of ​​the ion beam under the same incident conditions; and can combine the calibration of the beam current rate with periodic calibration to form a closed-loop compensation; and automatically generates etching trajectories based on processing requirements to achieve highly uniform processing.

[0116] In some embodiments, the relative motion between the ion source and the sample may include the following:

[0117] (a) Coupled motion sample stage:

[0118] The motion control system 03 includes a motion mechanism 32 that drives the sample stage to move in two orthogonal directions. The control parameters include parameters that control the sample stage 02 to move in two orthogonal directions, enabling full-width oblique incidence etching. Figure 4 As shown, Figure 4 This is a schematic diagram of an example coupled motion sample stage. For ease of reference, only some relevant components of the vacuum etching machine are shown in the figure. The shaded area in the figure represents the ion beam coverage area. The motion mechanism 32 can move in the direction of the arrow. In this coupled motion sample stage method, the sample stage has two orthogonal degrees of freedom of movement simultaneously to ensure full coverage. However, it also places high demands on the size of the ion source and the precision of the motor control.

[0119] (ii) The ion source rotates around its own center:

[0120] The motion control system 03 may include a rotation mechanism 31 that drives the ion source 01 to rotate around its own center to change the incident angle. Control parameters include parameters that control the rotation of the ion source 01 around its own center. The ion source 01 changes the incident angle with itself as the rotation center, and combined with the planar movement scanning of the sample stage 02, uniform etching is achieved; for example... Figure 5 As shown, Figure 5This is a schematic diagram of an ion source rotating around its own center. For ease of reference, only some of the relevant components of the vacuum etching machine are shown in the figure. The shaded area in the figure is the ion beam coverage area. The rotation mechanism 31 can rotate the ion source 01 to change the incident angle. The motion mechanism 32 can move the sample stage 02 in the direction of the arrow. In this way, the ion source rotates around its own center. By controlling the ion source to change the incident angle with its own center as the rotation axis, the sample stage only needs to perform a single degree of freedom reciprocating motion to achieve full-area coverage tilting etching. The structure is simple, but the overall movement distance of the sample stage is relatively long.

[0121] (iii) The ion source rotates around the center of the sample stage:

[0122] The motion control system 03 may include a swing arm mechanism 33 that drives the ion source 01 to rotate around the center of the sample stage, and controls the parameters for the rotation of the ion source 01 around the center of the sample stage. The ion source 01 rotates around the center of the sample stage 02 via the swing arm mechanism 33, reducing the need for large-range movement of the sample stage 02; for example... Figure 6 As shown, Figure 6 This is a schematic diagram of an ion source rotating around the center of a sample stage. For ease of reference, only some of the relevant components of the vacuum etching machine are shown in the figure. The shaded area in the figure is the ion beam coverage area. The ion source 01 rotates and swings around the center of the sample stage 02 via the swing arm mechanism 33. The sample stage 02 can remain relatively stationary or only perform a small-range scan, such as a small-range movement in the direction of the arrow. This method of rotating the ion source around the center of the sample stage has a slightly higher structural complexity, but it can avoid large movements of the sample stage.

[0123] In one embodiment, the ion source can be a strip-shaped ion source to ensure uniform coverage in the width direction, while achieving full coverage in the length direction through motion control, and includes a beam stop structure to limit the ion beam divergence angle; during the rotation or oscillation of the ion source, the beam intensity and uniformity are kept stable.

[0124] The vacuum etching machine described in this application, through its full-width oblique incidence design, ensures consistent etching rates across all areas of the sample, resolving the issue of uneven etching at the near and far ends in traditional processes, and significantly improving uniformity. It is compatible with large-size samples and non-planar samples with unidirectional curvature, greatly enhancing processing flexibility and applicability. It overcomes intra-wafer differences caused by uneven ion beam divergence angles, improving the consistency and throughput of large-area processing. Depending on actual equipment requirements, three options are available: sample stage coupling motion, ion source self-rotation, or ion source rotation around the sample stage, adapting to different scenarios.

[0125] Especially for non-planar samples with curvature in one direction, it significantly improves the applicability of the equipment to non-planar samples and enhances the flexibility of the process; it has universal applicability to the processing of common optical components and functional devices such as cylindrical surfaces and arc substrates; through trajectory adaptive control, it ensures the processing uniformity of large-size and curved samples, providing a guarantee for industrial applications; it controls each region of the sample to pass through the same ion beam cross-sectional area during the etching process, eliminating the etching rate difference between the near and far ends caused by the working distance difference in traditional processes; it can adapt to large-size samples, spherical samples, and non-planar samples with unidirectional curvature; the incident angle θ has a wide controllable range (e.g., 0~80°) and maintains full coverage.

[0126] The following describes an embodiment of an ion beam etching apparatus.

[0127] refer to Figure 7 As shown, Figure 7 This is a schematic diagram of an ion beam etching apparatus according to one embodiment, including:

[0128] The requirement acquisition module 10 is used to acquire the target geometry and processing requirement information of the sample etching, wherein the processing requirement information includes the target etching depth, incident angle range and uniformity error information.

[0129] The process acquisition module 20 is used to acquire target etching process parameters based on the processing requirements information; wherein, the target etching process parameters include: target incident angle, target working distance, and etching uniformity parameters;

[0130] The trajectory planning module 30 is used to plan the motion trajectory of the ion source and / or sample stage according to the target geometry, target etching process parameters and motion control function;

[0131] The motion control module 40 is used to control the movement of the ion source and / or sample stage according to the motion trajectory during the scanning etching process.

[0132] The ion beam etching apparatus of this embodiment can execute an ion beam etching method provided in the embodiments of this application. The implementation principle is similar. The actions performed by each module in the ion beam etching apparatus in each embodiment of this application correspond to the steps in the ion beam etching method in each embodiment of this application. For detailed functional descriptions of each module of the ion beam etching apparatus, please refer to the descriptions in the corresponding ion beam etching methods shown above. They will not be repeated here.

[0133] The following describes embodiments of computer devices and computer-readable storage media.

[0134] This application provides a technical solution for a computer device to implement functions related to an ion beam etching method. The computer device of this embodiment includes one or more processors, a memory, and one or more application programs, wherein the one or more application programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs are configured for the steps of the ion beam etching method of any embodiment.

[0135] like Figure 8 As shown, Figure 8 This is a block diagram of an example computer device; the computer device may be a mobile phone, computer, digital broadcasting terminal, messaging device, game console, tablet device, medical device, fitness device, personal digital assistant, etc. The computer device 100 may include one or more of the following components: processing component 102, memory 104, power component 106, multimedia component 108, audio component 110, input / output (I / O) interface 112, sensor component 114, and communication component 116.

[0136] Processing component 102 typically controls the overall operation of computer device 100, such as operations associated with display, telephone calls, data communication, camera operation, and recording operation.

[0137] The memory 104 is configured to store various types of data to support the operation of the computer device 100. Such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk or optical disk.

[0138] The power supply unit 106 provides power to the various components of the computer device 100.

[0139] Multimedia component 108 includes a screen that provides an output interface between computer device 100 and user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). In some embodiments, multimedia component 108 includes a front-facing camera and / or a rear-facing camera.

[0140] The audio component 110 is configured to output and / or input audio signals.

[0141] I / O interface 112 provides an interface between processing component 102 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, power buttons, and lock buttons.

[0142] Sensor assembly 114 includes one or more sensors for providing various aspects of state assessment for computer device 100. Sensor assembly 114 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact.

[0143] The communication component 116 is configured to facilitate wired or wireless communication between the computer device 100 and other devices. The computer device 100 can access wireless networks based on communication standards, such as WiFi, carrier networks (such as 2G, 3G, 4G, or 5G), or combinations thereof.

[0144] This application provides a computer-readable storage medium to implement functions related to an ion beam etching method. The computer-readable storage medium stores at least one instruction, at least one program, code set, or instruction set, which is loaded by a processor and executes the ion beam etching method of any embodiment.

[0145] In an exemplary embodiment, the computer-readable storage medium may be a non-transitory computer-readable storage medium that includes instructions, such as a memory that includes instructions. For example, a non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0146] Those skilled in the art will understand that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0147] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. An ion beam etching method, characterized in that, include: Obtain the target geometry and processing requirements information for sample etching, wherein the processing requirements information includes the target etching depth, incident angle range, and uniformity error information; The target etching process parameters are obtained based on the processing requirements information; wherein, the target etching process parameters include: target incident angle, target working distance, and etching uniformity parameters; The motion trajectory of the ion source and / or sample stage is planned based on the target geometry, target etching process parameters, and motion control function; specifically including: The surface equation of the sample surface is obtained based on the target geometry, and the normal vector at each discrete point on the sample surface is calculated based on the surface equation. The incident angle and incident distance formulas for the relative motion between the ion source and the sample stage are determined based on the emission point coordinates of the ion source, the discrete point coordinates of the sample surface, and the normal vector. The incident angle formula includes: ； ； The incident distance formula includes: ； in, Indicates the angle of incidence. Represents the coordinates of the emission point of the ion source. Represents the coordinates of discrete points on the sample surface. This represents the normal vector of the sample surface. Indicates the incident direction vector. Indicates the incident distance; A motion control function is generated based on the target etching process parameters, the incident angle formula, and the incident distance formula, and the motion trajectory of the ion source and / or the sample stage is calculated. The motion control function includes: If the sample stage undergoes coupled motion, the discrete points on the sample surface sequentially satisfy the function: , Where, the symbol "→" indicates approaching, and t represents a time point. Represents the angle of incidence at time t. Indicates the angle of incidence of the target. This represents the working distance at time t. Indicates the target working distance; If the ion source is controlled to rotate, the rotation angle of the ion source rotating around the center or oscillating around the sample stage satisfies ;in, Indicates the rotation angle; During the scanning etching process, the ion source and / or sample stage are controlled to move according to the motion trajectory.

2. The ion beam etching method according to claim 1, characterized in that, Also includes: The etching rate distribution function was obtained by using a standard sample and measuring etching depth and time. The rate mapping table of the ion source is read, and during the etching process, the beam distribution is detected every set time interval, and the rate mapping table is updated. The motion trajectory is compensated based on the updated rate mapping table.

3. The ion beam etching method according to claim 1, characterized in that, Also includes: Obtain the incident angle deviation and distance deviation values ​​between the sample's surface position and the ion beam incident direction; The control parameters of the ion source and / or sample stage are corrected based on the incident angle deviation and distance deviation values.

4. The ion beam etching method according to claim 3, characterized in that, The incident angle deviation value is: ; The distance deviation value is: ; The expression for the feedback correction is: ; in, This indicates the incident angle deviation value. Indicates the distance deviation value. , This is the proportional-integral control coefficient. Indicates the correction value. This is a preset deviation function.

5. The ion beam etching method according to claim 3, characterized in that, The control parameters include: parameters for controlling the sample stage to move in two orthogonal directions, parameters for controlling the ion source to rotate around its own center, and / or parameters for controlling the ion source to rotate around the center of the sample stage.

6. An ion beam etching apparatus, characterized in that, include: The requirement acquisition module is used to acquire the target geometry and processing requirement information for sample etching, wherein the processing requirement information includes the target etching depth, incident angle range, and uniformity error information. The process acquisition module is used to acquire target etching process parameters based on the processing requirements information; wherein, the target etching process parameters include: target incident angle, target working distance, and etching uniformity parameters; The trajectory planning module is used to plan the motion trajectory of the ion source and / or sample stage based on the target geometry, target etching process parameters, and motion control function; specifically, it includes: The surface equation of the sample surface is obtained based on the target geometry, and the normal vector at each discrete point on the sample surface is calculated based on the surface equation. The incident angle and incident distance formulas for the relative motion between the ion source and the sample stage are determined based on the emission point coordinates of the ion source, the discrete point coordinates of the sample surface, and the normal vector. The incident angle formula includes: ； ； The incident distance formula includes: ； in, Indicates the angle of incidence. Represents the coordinates of the emission point of the ion source. Represents the coordinates of discrete points on the sample surface. This represents the normal vector of the sample surface. Indicates the incident direction vector. Indicates the incident distance; A motion control function is generated based on the target etching process parameters, the incident angle formula, and the incident distance formula, and the motion trajectory of the ion source and / or the sample stage is calculated. The motion control function includes: If the sample stage undergoes coupled motion, the discrete points on the sample surface sequentially satisfy the function: , Where, the symbol "→" indicates approaching, and t represents a time point. Represents the angle of incidence at time t. Indicates the angle of incidence of the target. This represents the working distance at time t. Indicates the target working distance; If the ion source is controlled to rotate, the rotation angle of the ion source rotating around the center or oscillating around the sample stage satisfies ;in, Indicates the rotation angle; The motion control module is used to control the movement of the ion source and / or sample stage according to the motion trajectory during the scanning etching process.

7. A vacuum etching machine, characterized in that, include: Ion source, sample stage, motion control system, vacuum chamber, and controller; The sample stage is used to place the etched sample; The ion source is used to emit an ion beam; The motion control system is used to drive the ion source and / or sample stage to move. The controller is used to control the motion control system using the ion beam etching method of any one of claims 1-5.

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