An impedance matcher and ion source apparatus

Abstract

The application discloses an impedance matcher and an ion source device. The impedance matcher is located in a vacuum chamber in the ion source device; the impedance matcher comprises an inductor coil and at least two capacitor units; the inductor coil is located outside a reaction cavity in the ion source device and is used for ionizing a process gas in the reaction cavity; each capacitor unit comprises a plurality of capacitor substrates which are stacked; the capacitor substrate comprises a ceramic plate and a conductive layer formed on a first surface of the ceramic plate; wherein, in the same capacitor unit, the conductive layers of the odd-numbered capacitor substrates are electrically connected to form a first electrode group, the conductive layers of the even-numbered capacitor substrates are electrically connected to form a second electrode group, and the first electrode group and the second electrode group are insulated from each other. The application provides an impedance matcher and an ion source device, the impedance matcher can be installed in the vacuum chamber in the ion source device, and can ensure the utilization rate of radio frequency energy in the ion source device under the condition that the length of the radio frequency cable is adjustable.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device fabrication technology, and in particular to an impedance matching device and an ion source device. Background Technology

[0002] Inductively coupled ion source devices generate high-density plasma using inductive coupling, offering advantages such as no electrode contamination and simple structure. They are suitable for applications such as plasma etching, thin film preparation, and material surface modification.

[0003] Existing inductively coupled ionization (ICI) source devices typically include a radio frequency (RF) power supply, an adjustable impedance matching unit, a fixed-length RF cable, an inductor coil, a reaction chamber, and a vacuum chamber. The inductor coil and reaction chamber are located inside the vacuum chamber. The RF power supply is electrically connected to the inductor coil sequentially via the adjustable impedance matching unit and the RF cable. The fixed-length RF cable passes through the vacuum chamber and connects to the inductor coil, which is wound around the outside of the reaction chamber to ionize the process gas inside the chamber to generate plasma. The adjustable impedance matching unit is used to adjust the system impedance to reduce reflected power and improve energy transfer efficiency.

[0004] However, existing inductively coupled ion source devices have the following drawbacks: the fixed length of the RF cable is not adjustable, resulting in poor installation flexibility and insufficient adaptability to different equipment layouts or space constraints. More importantly, the length of the RF cable directly affects the system impedance characteristics. Changing the RF cable length will alter the impedance matching relationship between the RF power supply and the reaction chamber. In this case, even with adjustment using an adjustable impedance matching unit, it is difficult to achieve an ideal matching state, leading to a significant increase in reflected power, reduced energy utilization efficiency, and impact on the stability of plasma generation and process performance. Summary of the Invention

[0005] The present invention provides an impedance matching device and an ion source device. The impedance matching device can be installed in the vacuum chamber of the ion source device and can also ensure the utilization rate of radio frequency energy in the ion source device under the condition that the length of the radio frequency cable is adjustable.

[0006] According to one aspect of the present invention, an impedance matching device is provided, which is located in a vacuum chamber in an ion source device;

[0007] The impedance matching device includes an inductor coil and at least two capacitor units;

[0008] The inductor coil is located outside the reaction chamber in the ion source device and is used to ionize the process gas inside the reaction chamber.

[0009] Each of the capacitor units includes a multilayered capacitor substrate; the capacitor substrate includes a ceramic plate and a conductive layer formed on a first surface of the ceramic plate;

[0010] In the same capacitor unit, the conductive layers of the odd-numbered capacitor substrates are electrically connected to each other to form a first electrode group, and the conductive layers of the even-numbered capacitor substrates are electrically connected to each other to form a second electrode group. The first electrode group and the second electrode group are mutually insulated.

[0011] Optionally, in the same capacitor unit, the ceramic plate and the conductive layer are alternately stacked; each capacitor substrate has the same structure, and the latter capacitor substrate in two adjacent capacitor substrates is rotated 180° around an axis perpendicular to the surface of the former capacitor substrate.

[0012] Optionally, at least some of the capacitor units may further include a dielectric layer disposed between two adjacent capacitor substrates;

[0013] The material of the dielectric layer includes polytetrafluoroethylene, mica, or ceramic.

[0014] Optionally, the impedance matching device contains three capacitor units, namely a first capacitor unit, a second capacitor unit, and a third capacitor unit.

[0015] The first end of the first capacitor unit is electrically connected to the radio frequency cable passing through the vacuum chamber, and the second end of the first capacitor unit is electrically connected to the first end of the second capacitor unit; the first end of the second capacitor unit is electrically connected to the first end of the inductor coil, and the second end of the second capacitor unit is electrically connected to the first end of the third capacitor unit; the first end of the third capacitor unit is electrically connected to the second end of the inductor coil, and the second end of the third capacitor unit is grounded.

[0016] Optionally, the impedance matching device contains two capacitor units, namely a fourth capacitor unit and a fifth capacitor unit.

[0017] The first end of the fourth capacitor unit is electrically connected to the radio frequency cable passing through the vacuum chamber, and the second end of the fourth capacitor unit is electrically connected to the first end of the inductor coil; the first end of the fifth capacitor unit is electrically connected to the second end of the fourth capacitor unit, and the second end of the fifth capacitor unit is grounded; the second end of the inductor coil is grounded.

[0018] Optionally, each of the capacitor units may further include a plurality of metal fasteners;

[0019] The ceramic plate includes at least one first through hole and at least three second through holes;

[0020] The outer periphery of the first through hole is provided with a pad integrally connected to the conductive layer;

[0021] The first through hole and each of the second through holes correspond to a metal fastener. The metal fastener is inserted into the corresponding through hole to press and fix the multilayer capacitor substrate, and to realize the electrical connection between the conductive layers of the odd-numbered capacitor substrate and the electrical connection between the conductive layers of the even-numbered capacitor substrate.

[0022] Optionally, the impedance matching device provided in this embodiment further includes a mounting substrate; each of the capacitor units is fixed to a first side of the mounting substrate by the metal fasteners, and the inductor coil is disposed on a second side of the mounting substrate; wherein the first side and the second side are disposed opposite to each other;

[0023] The metal fasteners include screws and nuts;

[0024] The mounting base plate is provided with a first mounting through hole to accommodate the nut in the metal fastener.

[0025] Optionally, the distance between the vertical projection edge of the conductive layer on the ceramic plate and the edge of the ceramic plate is greater than 0.

[0026] The outline of the conductive layer in the vertical projection on the ceramic plate includes at least three arc-shaped edges;

[0027] The arc-shaped edge corresponds one-to-one with the second through hole, and the arc-shaped edge partially surrounds the corresponding second through hole.

[0028] Optionally, the thickness of the ceramic plate ranges from 0.1 mm to 1 mm;

[0029] The thickness of the conductive layer ranges from 10 μm to 100 μm;

[0030] The conductive layer is made of at least one of platinum, palladium, nickel, copper, silver, and gold.

[0031] According to another aspect of the present invention, an ion source device is provided, the ion source device comprising:

[0032] RF power supply;

[0033] Adjustable impedance matching unit;

[0034] RF cables;

[0035] Vacuum cavity;

[0036] The reaction chamber located within the vacuum chamber and the impedance matching device provided in any embodiment of the present invention; wherein the radio frequency power supply, the adjustable impedance matching unit, the radio frequency cable and the impedance matching device are electrically connected in sequence.

[0037] This invention provides an impedance matching device that can be directly installed within the vacuum chamber of an ion source device. The radio frequency (RF) cable in the ion source device passes through the vacuum chamber and is electrically connected to the capacitor unit in the impedance matching device, transmitting the RF energy from the RF power supply to the inductor coil via the RF cable and the capacitor unit. The capacitor unit in the impedance matching device employs a multi-layer capacitor substrate stacked structure, featuring small size and low cost. The capacitor substrate includes a ceramic plate and a conductive layer. The ceramic plate provides excellent heat dissipation characteristics, allowing the capacitor unit to maintain stable performance under high temperature and high pressure environments. During the installation of the impedance matching device provided in this invention, the capacitance value of each capacitor unit can be flexibly adjusted by changing the number of capacitor substrates, thereby maintaining low reflected power and high RF utilization even with variable RF cable length. In summary, the impedance matching device provided in this invention can be installed within the vacuum chamber of an ion source device and ensures high RF energy utilization in the ion source device even with adjustable RF cable length.

[0038] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 This is a schematic diagram of an impedance matching device according to an embodiment of the present invention;

[0041] Figure 2 This is a schematic diagram showing the relative positional relationship between the inductor coil and the reaction chamber according to an embodiment of the present invention;

[0042] Figure 3 This is a top view of a capacitor cell structure according to an embodiment of the present invention;

[0043] Figure 4 It is along Figure 3 A schematic diagram of a cross-sectional structure obtained by section line A1A2 in the diagram;

[0044] Figure 5 It is along Figure 3 A schematic diagram of another cross-sectional structure obtained by section line A1A2 in the diagram;

[0045] Figure 6This is a schematic diagram of another impedance matching device provided according to an embodiment of the present invention;

[0046] Figure 7 This is a schematic diagram of another impedance matching device provided according to an embodiment of the present invention;

[0047] Figure 8 This is a cross-sectional structural schematic diagram of another capacitor unit provided according to an embodiment of the present invention;

[0048] Figure 9 This is a cross-sectional structural schematic diagram of another capacitor unit provided according to an embodiment of the present invention;

[0049] Figure 10 This is a schematic diagram of a mounting substrate provided according to an embodiment of the present invention;

[0050] Figure 11 This is a schematic diagram of an ion source device according to an embodiment of the present invention. Detailed Implementation

[0051] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0052] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0053] Figure 1 This is a schematic diagram of an impedance matching device according to an embodiment of the present invention, with reference to... Figure 1 The impedance matching device provided in this embodiment is located in the vacuum chamber 310 of the ion source device; the impedance matching device includes an inductor coil 110 and at least two capacitor units 120; Figure 2This is a schematic diagram showing the relative positional relationship between the inductor coil and the reaction chamber according to an embodiment of the present invention. (Refer to...) Figure 2 The inductor coil 110 is located outside the reaction chamber 210 in the ion source device. The inductor coil 110 is used to ionize the process gas in the reaction chamber 210. Figure 3 This is a top view schematic diagram of a capacitor unit according to an embodiment of the present invention. Figure 4 It is along Figure 3 A schematic diagram of a cross-sectional structure obtained by section lines A1A2 in the diagram, for reference. Figure 3 and Figure 4 Each capacitor unit 120 includes a capacitor substrate 121 stacked in multiple layers; the capacitor substrate 121 includes a ceramic plate 101 and a conductive layer 102 formed on the first surface of the ceramic plate 101; wherein, in the same capacitor unit 120, the conductive layers 102 of the odd-numbered layers of capacitor substrate 121 are electrically connected to each other to form a first electrode group, and the conductive layers 102 of the even-numbered layers of capacitor substrate 121 are electrically connected to each other to form a second electrode group, and the first electrode group and the second electrode group are mutually insulated.

[0054] Specifically, the inductor coil 110 provided in this embodiment can be spiral-shaped and wound around the outside of the reaction chamber 210. Each capacitor unit 120 may include at least four stacked capacitor substrates 121. For example, the number of capacitor substrates 121 in a capacitor unit 120 can be 4, 6, 8 or 10, etc.

[0055] In the same capacitor unit 120, ceramic plates 101 and conductive layers 102 can be alternately stacked. The conductive layers 102 of odd-numbered capacitor substrates 121 are electrically connected to each other, and the conductive layers 102 of even-numbered capacitor substrates 121 are electrically connected to each other. This can be understood as the conductive layer 102 of the i-th capacitor substrate 121 being electrically connected to the conductive layer 102 of the (i+2)-th capacitor substrate 121, and the conductive layer 102 of the (i+1)-th capacitor substrate 121 being electrically connected to the conductive layer 102 of the (i+3)-th capacitor substrate 121. The conductive layers 102 of adjacent capacitor substrates 121 are insulated from each other, where i is a positive integer. The shape of the vertical projection of the conductive layer 102 onto the ceramic plate 101 can be rectangular, circular, triangular, or polygonal, etc. The vertical projections of adjacent conductive layers 102 onto the same ceramic plate 101 overlap.

[0056] The capacitor unit 120 includes multiple layers of capacitor substrates 121, and the edges of each capacitor substrate 121 can be aligned. The conductive layers 102 in the capacitor unit 120 can be electrically connected by wires, conductive structures, or solder layers.

[0057] This embodiment integrates a large-capacity capacitor unit 120 within a compact physical space by designing the capacitor unit 120 as a multi-layered structure, with the conductive layers 102 of the odd-numbered capacitor substrates 121 electrically connected to each other, and the conductive layers 102 of the even-numbered capacitor substrates 121 electrically connected to each other. Compared to conventional high-voltage, large-volume capacitors, this embodiment reduces the size of the capacitor unit 120 through the layered structure, making it easier to install in the confined vacuum chamber 310. Simultaneously, the layered structure, connected by large-area conductive layers 102, ensures uniform current distribution, reduces the risk of localized overheating, and improves the reliability and lifespan of the entire impedance matching device under long-term high-voltage, high-current operation. The high voltage in this embodiment can exceed 3000V.

[0058] The capacitor unit 120 may include an even number of capacitor substrates 121, with each pair of adjacent capacitor substrates 121 forming a capacitor. The capacitor substrate 121 may be composed of multiple capacitors connected in parallel. The capacitor unit 120 provided in this embodiment has a simple structure. In actual installation, the number of capacitor substrates 121 can be increased or decreased according to the actual required capacitance value, achieving precise adjustment of the capacitance value of the capacitor unit 120, thereby effectively reducing the reflected power in the ion source device.

[0059] The capacitor substrate 121 includes a ceramic plate 101, which serves as both the dielectric in the capacitor and a support for the conductive layer 102. The ceramic plate 101 can be rectangular, with its first surface being the long and wide faces of the cuboid. A capacitor unit 120 can have a length of 3.5cm to 5cm in the first direction (long direction), a length of 2.5cm to 4cm in the second direction (wide direction), and a length of less than 0.8cm in the third direction (height direction). The first, second, and third directions are perpendicular to each other.

[0060] The ceramic plate 101 possesses low loss, high dielectric constant, and stable temperature characteristics, enabling the capacitor unit 120 to exhibit high voltage resistance in high-frequency radio frequency environments. The ceramic plate 101 also has good thermal conductivity, allowing for rapid heat dissipation from the capacitor unit 120 during operation, ensuring stable operation under high-temperature and high-voltage conditions. In summary, the capacitor unit 120 provided in this embodiment exhibits low temperature drift and low heat loss, thereby improving the efficiency and stability of the impedance matching circuit.

[0061] The inventors discovered that by adding multiple capacitor units 120 to the vacuum chamber 310, which are electrically connected to the radio frequency cable, impedance matching between the radio frequency power supply and the reaction chamber can be achieved by adjusting the adjustable impedance matching unit located outside the vacuum chamber 310 when the length of the radio frequency cable changes. This effectively suppresses reflected power and improves the efficiency of radio frequency energy utilization.

[0062] This embodiment provides an impedance matching device that can be directly installed within the vacuum chamber of an ion source device. The radio frequency (RF) cable in the ion source device passes through the vacuum chamber and is electrically connected to the capacitor unit in the impedance matching device, transmitting the RF energy from the RF power supply to the inductor coil via the RF cable and the capacitor unit. The capacitor unit in the impedance matching device employs a multi-layer capacitor substrate stacked structure, featuring small size and low cost. The capacitor substrate includes a ceramic plate and a conductive layer. The ceramic plate provides excellent heat dissipation characteristics, allowing the capacitor unit to maintain stable performance under high temperature and high pressure environments. During the installation of the impedance matching device provided in this embodiment, the capacitance value of each capacitor unit can be flexibly adjusted by changing the number of capacitor substrates, thereby maintaining low reflected power and high RF utilization even with variable RF cable length. In summary, the impedance matching device provided in this embodiment can be installed within the vacuum chamber of an ion source device and ensures high utilization of RF energy in the ion source device even with adjustable RF cable length.

[0063] Optional, continue to refer to Figure 4 In the same capacitor unit 120, ceramic plates 101 and conductive layers 102 are alternately stacked; each capacitor substrate 121 has the same structure, and the latter capacitor substrate 121 of two adjacent capacitor substrates is rotated 180° around an axis perpendicular to the surface of the former capacitor substrate 121.

[0064] Specifically, in this embodiment, all capacitor substrates 121 have the same structure. During the production process, stacking and assembly can be completed simply by rotating them, which significantly improves the manufacturing efficiency of the capacitor unit 120 and avoids the production complexity caused by differences in the structure of the capacitor substrates 121.

[0065] The subsequent capacitor substrate 121 can be configured by rotating it 180° around an axis perpendicular to the center of the surface of the preceding capacitor substrate 121. This 180° rotation around the central axis ensures that the vertical projection of the ceramic plate 101 in the subsequent capacitor substrate 121 onto the preceding capacitor substrate 121 is completely coincident. This symmetrical stacked structure ensures that the projected area of ​​the capacitor units 120 remains unchanged when stacked in the Z-axis direction, which helps maintain the structural stability and spatial layout consistency of the capacitor units 120, making it suitable for integrated installation in space-constrained vacuum chambers.

[0066] Optional, Figure 5 It is along Figure 3 A schematic diagram of another cross-sectional structure obtained by section line A1A2 in the diagram, see reference. Figure 5 At least some of the capacitor units 120 also include a dielectric layer 106 disposed between two adjacent capacitor substrates 121.

[0067] Specifically, adding an additional dielectric layer 106 to the capacitor unit 120 can further increase the insulation strength between adjacent conductive layers 102, preventing breakdown under high voltage and significantly improving the withstand voltage rating and safety of the capacitor unit 120. Furthermore, the dielectric layer 106 allows for precise control of the capacitance value of the capacitor unit 120. By selecting dielectric materials with different dielectric constants, the capacitance value of the capacitor unit 120 can be fine-tuned and precisely controlled to meet more refined impedance matching requirements.

[0068] Optionally, the dielectric layer may be made of polytetrafluoroethylene, mica, or ceramic.

[0069] Specifically, polytetrafluoroethylene (PTFE) exhibits excellent high-frequency performance and chemical stability. Mica possesses high voltage resistance and low loss characteristics. Ceramics exhibit high dielectric constant and good thermal stability. PTFE, mica, and ceramics can all be placed in the capacitor unit provided in this embodiment to optimize the overall performance of the capacitor unit according to different application scenarios (such as power, frequency, and cost).

[0070] Optional, continue to refer to Figure 1 In this embodiment, the impedance matching circuit has three capacitor units 120, namely a first capacitor unit 122, a second capacitor unit 123, and a third capacitor unit 124. The first end of the first capacitor unit 122 is electrically connected to the radio frequency cable passing through the vacuum chamber 310, and the second end of the first capacitor unit 122 is electrically connected to the first end of the second capacitor unit 123. The first end of the second capacitor unit 123 is electrically connected to the first end of the inductor coil 110, and the second end of the second capacitor unit 123 is electrically connected to the first end of the third capacitor unit 124. The first end of the third capacitor unit 124 is electrically connected to the second end of the inductor coil 110, and the second end of the third capacitor unit 124 is grounded.

[0071] Specifically, the impedance matching device provided in this embodiment can achieve a wider range of impedance transformations, making it suitable for handling a larger range of load impedance changes. When the impedance within the reaction chamber fluctuates, the impedance matching device provided in this embodiment can more effectively match the impedance within the reaction chamber with the RF power supply impedance, ensuring that the RF power is efficiently and stably coupled into the reaction chamber, reducing reflected power, and improving process stability.

[0072] Optional, Figure 6 This is a schematic diagram of another impedance matching device provided according to an embodiment of the present invention, with reference to... Figure 6In this embodiment, the impedance matching device has two capacitor units 120, namely a fourth capacitor unit 125 and a fifth capacitor unit 126. The first end of the fourth capacitor unit 125 is electrically connected to the radio frequency cable passing through the vacuum chamber, and the second end of the fourth capacitor unit 125 is electrically connected to the first end of the inductor coil 110. The first end of the fifth capacitor unit 126 is electrically connected to the second end of the fourth capacitor unit 125, and the second end of the fifth capacitor unit 126 is grounded. The second end of the inductor coil 110 is grounded.

[0073] Specifically, the impedance matching device provided in this embodiment uses only two capacitor units 120 and one inductor coil 110, reducing the number of components. While reducing manufacturing costs and system complexity, it still achieves impedance matching functionality.

[0074] Optional, Figure 7 This is a schematic diagram of another impedance matching device provided according to an embodiment of the present invention, with reference to... Figure 7 In this embodiment, the impedance matching device has two capacitor units 120, namely a fourth capacitor unit 125 and a fifth capacitor unit 126. The first end of the fourth capacitor unit 125 is electrically connected to the radio frequency cable passing through the vacuum chamber, and the second end of the fourth capacitor unit 125 is grounded. The first end of the fifth capacitor unit 126 is electrically connected to the first end of the fourth capacitor unit 125, and the second end of the fifth capacitor unit 126 is electrically connected to the first end of the inductor coil 110, and the second end of the inductor coil 110 is grounded.

[0075] Specifically, the impedance matching device provided in this embodiment has a compact structure, is easy to integrate, and is beneficial for layout and wiring in the limited space of a vacuum chamber.

[0076] Optional, Figure 8 This is a cross-sectional structural schematic diagram of another capacitor unit provided according to an embodiment of the present invention, with reference to... Figure 3 and Figure 8 Each capacitor unit 120 also includes multiple metal fasteners 130; the ceramic plate 101 includes at least one first through hole 103 and at least three second through holes 104; the outer periphery of the first through hole 103 is provided with a pad 105 integrally connected to the conductive layer 102; each first through hole 103 and each second through hole 104 corresponds to a metal fastener 130, and the metal fastener 130 passes through the corresponding through hole to press and fix the multilayer capacitor substrate 121, and realize the electrical connection between the conductive layers of the odd-numbered capacitor substrate 121 and the electrical connection between the conductive layers of the even-numbered capacitor substrate 121.

[0077] Specifically, the metal fastener 130 may include a screw 131 and a nut 132.

[0078] The metal fastener 130 located in the first through hole 103 is electrically connected to the pad 105 on the outer periphery of the first through hole 103. The pad 105 is electrically connected to the conductive layer 102, thereby realizing the electrical connection between the metal fastener 130 and the conductive layer 102. It can be seen that the metal fastener 130 provided in this embodiment can simultaneously realize the dual functions of mechanical fixing and electrical connection.

[0079] In this embodiment, the multi-layered capacitor substrate 121 is fixed by metal fasteners 130, which simplifies the assembly process, ensures uniform pressure between the layers of the capacitor substrate 121, and ensures the mechanical strength and reliability of the electrical connection.

[0080] Figure 9 This is a cross-sectional structural schematic diagram of another capacitor unit provided according to an embodiment of the present invention, with reference to... Figure 3 and Figure 9 Solder can be filled into the first through-hole 103 to form a solder layer 107. The solder layer 107 is electrically connected to the pad 105, thereby achieving electrical connection between the conductive layers of the odd-numbered capacitor substrate 121 and between the conductive layers of the even-numbered capacitor substrate 121, and also achieving the fastening of the multilayer capacitor substrate 121. A portion of the second through-hole 104 can also be filled with solder layer 107, and metal fasteners can be provided in another portion of the second through-hole 104 to fasten the multilayer capacitor substrate 121. Pads can also be provided around a portion of the second through-hole 104, but the pads surrounding the second through-hole are not connected to the conductive layer 102 located on the same surface.

[0081] Optional, Figure 10 This is a schematic diagram of a mounting substrate according to an embodiment of the present invention, with reference to... Figure 8 and Figure 10 The impedance matching device provided in this embodiment also includes a mounting base plate 140; each capacitor unit 120 is fixed to the first side of the mounting base plate 140 by a metal fastener 130, and an inductor coil is disposed on the second side of the mounting base plate 140; wherein the first side and the second side are disposed opposite to each other; the metal fastener 130 includes a screw 131 and a nut 132; the mounting base plate 140 is provided with a first mounting through hole 141 for accommodating the nut 132 in the metal fastener 130.

[0082] Specifically, the mounting substrate 140 is preferably made of copper, which has good thermal and electrical conductivity. Each capacitor unit 120 can be mounted on the surface of the first side of the mounting substrate 140. The number of first mounting through holes 141 is equal to the sum of the number of first through holes and second through holes in all capacitor units 120, and its size is slightly larger than the through holes in the capacitor unit 120, so as to achieve through hole alignment and connection during installation.

[0083] By integrating each capacitor unit 120 onto the mounting substrate 140, a compact module is formed, which not only facilitates overall installation, debugging, and maintenance, but also enhances the mechanical stability of the system. The mounting substrate 140 can be closely fitted with the water-cooling plate in the ion source device, serving as a support structure and providing an effective heat conduction path to promptly dissipate the heat generated by the capacitor units 120. In addition, the mounting substrate 140 is also provided with a second mounting through hole 142 for arranging other cables in the ion source device.

[0084] The mounting base 140 can be circular in shape. The mounting base 140 can be grounded. The metal fasteners 130 corresponding to the grounded ports in each capacitor unit 120 are electrically connected to the mounting base 140, while the metal fasteners 130 corresponding to the ungrounded ports are kept insulated from the mounting base 140 through the first mounting through hole 141 to ensure electrical isolation.

[0085] The inductor coil is located on the second side of the mounting substrate 140, and the metal fastener 130 in the capacitor unit 120 located on the first side passes through the first mounting through hole 141 and can be electrically connected to the inductor coil through a wire.

[0086] Optional, continue to refer to Figure 3 The distance between the vertical projection edge of the conductive layer 102 on the ceramic plate 101 and the edge of the ceramic plate 101 is greater than 0; the outline of the vertical projection of the conductive layer 102 on the ceramic plate 101 includes at least three arc-shaped edges; the arc-shaped edges correspond one-to-one with the second through hole 104, and the arc-shaped edges partially surround the corresponding second through hole 104.

[0087] Specifically, the conductive layer 102 includes three arc-shaped edges, which can increase the area of ​​the conductive layer 102 projected vertically onto the ceramic plate 101. In addition, the arc-shaped edges can smooth the electric field distribution, reduce the electric field concentration effect, and further enhance the withstand voltage capability.

[0088] Optional, continue to refer to Figure 3 The thickness of the ceramic plate 101 ranges from 0.1 mm to 1 mm; the thickness of the conductive layer 102 ranges from 10 μm to 100 μm; the material of the conductive layer 102 includes at least one of platinum, palladium, nickel, copper, silver and gold.

[0089] Specifically, by setting the thickness of the ceramic plate 101 to be in the range of 0.1mm to 1mm and the thickness of the conductive layer 102 to be in the range of 10μm to 100μm, the height of the capacitor unit 120 can be reduced.

[0090] The conductive layer 102 is made of at least one of platinum, palladium, nickel, copper, silver, and gold, which can reduce the resistance of the conductive layer. The conductive layer 102 can be formed by methods such as screen printing.

[0091] Figure 11 This is a schematic diagram of an ion source device according to an embodiment of the present invention, with reference to... Figure 11 The ion source device provided in this embodiment includes: a radio frequency power supply 320, an adjustable impedance matching unit 330, a radio frequency cable 340, a vacuum chamber 310, a reaction chamber 210 located in the vacuum chamber, and an impedance matching device provided in any embodiment of the present invention; the radio frequency power supply 320, the adjustable impedance matching unit 330, the radio frequency cable 340 and the impedance matching device are electrically connected in sequence.

[0092] Specifically, the adjustable impedance matching unit 330 includes at least one adjustable capacitor and an inductor, and the matching network of the adjustable impedance matching unit 330 can be a π-type or L-type topology.

[0093] This embodiment provides an ion source device. The adjustable impedance matching unit in this ion source device can ensure that the radio frequency power supply and the plasma in the reaction chamber meet the basic impedance matching conditions. By setting the impedance matching device provided in any embodiment of the present invention in the vacuum chamber, the impedance matching between the radio frequency power supply and the plasma in the reaction chamber can still be guaranteed even when the length of the radio frequency cable is adjustable. This significantly improves the stability of plasma ignition, power transmission efficiency, and long-term operational reliability of the device, thereby enhancing the performance of the entire ion source device.

[0094] Optional, continue to refer to Figure 11 The ion source device provided in this embodiment also includes a grounded water-cooled plate 350; a mounting base 140 in the impedance matching device is fixed to one side of the water-cooled plate 350; each capacitor unit 120 is located on the side of the mounting base 140 away from the water-cooled plate 350; and an inductor coil 110 is located on the side of the water-cooled plate 350 away from the mounting base 140.

[0095] Specifically, the water-cooled plate 350 provides powerful active heat dissipation for the entire impedance matching circuit, which can promptly remove the large amount of heat generated by the inductor coil 110 and capacitor unit 120 during operation, ensuring that it can work stably for a long time at a safe temperature.

[0096] The water-cooled plate 350 also includes a through hole to ensure that the wires pass through the through hole to achieve the electrical connection between the capacitor unit 120 and the inductor coil 110.

[0097] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0098] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An impedance matching device, characterized in that, Located within the vacuum chamber of the ion source device; The impedance matching device includes an inductor coil and at least two capacitor units; The inductor coil is located outside the reaction chamber in the ion source device and is used to ionize the process gas inside the reaction chamber. Each of the capacitor units includes a multilayered capacitor substrate; the capacitor substrate includes a ceramic plate and a conductive layer formed on a first surface of the ceramic plate; In the same capacitor unit, the conductive layers of the odd-numbered capacitor substrates are electrically connected to each other to form a first electrode group, and the conductive layers of the even-numbered capacitor substrates are electrically connected to each other to form a second electrode group. The first electrode group and the second electrode group are mutually insulated. The impedance matching device further includes a mounting substrate, each of the capacitor units is fixedly mounted on a first side of the mounting substrate, and the inductor coil is disposed on a second side of the mounting substrate; wherein the first side and the second side are disposed opposite to each other; the mounting substrate is tightly attached to the water-cooling plate in the ion source device, and the mounting substrate is used to conduct heat generated by the capacitor units.

2. The impedance matching device according to claim 1, characterized in that, In the same capacitor unit, the ceramic plate and the conductive layer are alternately stacked; each capacitor substrate has the same structure, and the latter capacitor substrate in two adjacent capacitor substrates is rotated 180° around an axis perpendicular to the surface of the former capacitor substrate.

3. The impedance matching device according to claim 1, characterized in that, At least a portion of the capacitor unit also includes a dielectric layer disposed between two adjacent capacitor substrates; The material of the dielectric layer includes polytetrafluoroethylene, mica, or ceramic.

4. The impedance matching device according to claim 1, characterized in that, The impedance matching device contains three capacitor units, namely a first capacitor unit, a second capacitor unit, and a third capacitor unit. The first end of the first capacitor unit is electrically connected to the radio frequency cable passing through the vacuum chamber, and the second end of the first capacitor unit is electrically connected to the first end of the second capacitor unit; the first end of the second capacitor unit is electrically connected to the first end of the inductor coil, and the second end of the second capacitor unit is electrically connected to the first end of the third capacitor unit; the first end of the third capacitor unit is electrically connected to the second end of the inductor coil, and the second end of the third capacitor unit is grounded.

5. The impedance matching device according to claim 1, characterized in that, The impedance matching circuit has two capacitor units, namely the fourth capacitor unit and the fifth capacitor unit. The first end of the fourth capacitor unit is electrically connected to the radio frequency cable passing through the vacuum chamber, and the second end of the fourth capacitor unit is electrically connected to the first end of the inductor coil; the first end of the fifth capacitor unit is electrically connected to the second end of the fourth capacitor unit, and the second end of the fifth capacitor unit is grounded; the second end of the inductor coil is grounded.

6. The impedance matching device according to claim 1, characterized in that, Each of the capacitor units further includes multiple metal fasteners; The ceramic plate includes at least one first through hole and at least three second through holes; The outer periphery of the first through hole is provided with a pad integrally connected to the conductive layer; The first through hole and each of the second through holes correspond to a metal fastener. The metal fastener is inserted into the corresponding through hole to press and fix the multilayer capacitor substrate, and to realize the electrical connection between the conductive layers of the odd-numbered capacitor substrate and the electrical connection between the conductive layers of the even-numbered capacitor substrate.

7. The impedance matching device according to claim 6, characterized in that, The metal fasteners include screws and nuts; The mounting base plate is provided with a first mounting through hole to accommodate the nut in the metal fastener.

8. The impedance matching device according to claim 6, characterized in that, The distance between the vertical projection edge of the conductive layer on the ceramic plate and the edge of the ceramic plate is greater than 0. The outline of the conductive layer in the vertical projection on the ceramic plate includes at least three arc-shaped edges; The arc-shaped edge corresponds one-to-one with the second through hole, and the arc-shaped edge partially surrounds the corresponding second through hole.

9. The impedance matching device according to claim 1, characterized in that, The thickness of the ceramic plate ranges from 0.1 mm to 1 mm; The thickness of the conductive layer ranges from 10 μm to 100 μm; The conductive layer is made of at least one of platinum, palladium, nickel, copper, silver, and gold.

10. An ion source device, characterized in that, include: RF power supply; Adjustable impedance matching unit; RF cables; Vacuum cavity; The reaction chamber located within the vacuum chamber and the impedance matching device according to any one of claims 1-9; wherein the radio frequency power supply, the adjustable impedance matching unit, the radio frequency cable and the impedance matching device are electrically connected in sequence.

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