Wafer scrubbing device, equipment and method

Abstract

The invention discloses a wafer scrubbing device, wafer scrubbing equipment and a wafer scrubbing method, and the wafer scrubbing device comprises a rotating disc which can drive a wafer to lift and rotate; the chuck mechanism is used for clamping a wafer, the chuck mechanism comprises a first chuck mechanism and a second chuck mechanism which are oppositely arranged, and the first chuck mechanism and the second chuck mechanism can get close to each other or get away from each other; the double-sided brush is used for brushing the double sides of the wafer, and the double-sided brush is movably arranged on the wafer; the wafer has a scrubbing state and a spin-drying state, in the scrubbing state, the rotating disc is located below the chuck mechanism, and the chuck mechanism clamps the wafer and drives the wafer to rotate; in the spin-drying state, the rotating disc is located above the chuck mechanism, and the rotating disc drives the wafer to rotate. The wafer scrubbing device can realize direct spin-drying after scrubbing, and is relatively convenient to use and relatively high in working efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and specifically to a wafer brushing apparatus, equipment, and method. Background Technology

[0002] In semiconductor manufacturing, wafer surfaces often require cleaning when particulate contaminants are present or after chemical mechanical polishing. When particulate contaminants are present, chemical solutions such as SC1 and DHF are typically used to remove organic matter, metal ions, and some particles. After chemical polishing, high-pH solutions are used to remove particles, while low-pH solutions dissolve metals. Using a double-sided brush to clean the wafer effectively removes these residues, preventing defects or affecting subsequent processes.

[0003] Currently, wafers are typically cleaned in a separate chamber, either on one side or both sides. After cleaning, they are transferred to another chamber by a robotic arm for spin drying. This process is quite cumbersome, and the equipment occupies a large area. Summary of the Invention

[0004] To solve at least one of the above-mentioned technical problems, the present invention provides a wafer brushing device and brushing method, which can directly spin dry after brushing, making it convenient to use and highly efficient.

[0005] The present invention also provides a wafer brushing device, which is highly flexible and can be selected according to actual conditions.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A wafer brushing device, comprising:

[0008] A rotating disk that can drive the wafer to rise, fall, and rotate;

[0009] A chuck mechanism for holding a wafer, the chuck mechanism including a first chuck mechanism and a second chuck mechanism disposed opposite to each other, the first chuck mechanism and the second chuck mechanism being able to move closer to or further away from each other;

[0010] A double-sided brush for cleaning wafers on both sides, the double-sided brush being movably disposed on the wafer;

[0011] The wafer has a brushing and spin-drying state. In the brushing state, the rotary disk is located below the chuck mechanism, which clamps the wafer and drives it to rotate. In the spin-drying state, the rotary disk is located above the chuck mechanism, which drives the wafer to rotate.

[0012] In a preferred embodiment, the chuck mechanism is provided with a mounting frame and a plurality of rotating rollers disposed on the mounting frame. In the brushing state, the wafer is clamped between the plurality of rotating rollers and the plurality of rotating rollers drive the wafer to rotate.

[0013] In a preferred embodiment, the rotating disk is provided with a plurality of support columns, which support the lower surface of the wafer during the spin-drying state.

[0014] In a preferred embodiment, the support column is arranged around the circumference of the rotating disk.

[0015] In a preferred embodiment, the rotary disk is further provided with a plurality of fixed frames, each fixed frame having a rotating shaft and a clamping rod that rotates around the rotating shaft. In the spin-drying state, the clamping rod clamps the edge of the wafer.

[0016] In a preferred embodiment, the wafer brushing device further includes a swing arm with multiple nozzles for spraying a chemical solution onto the wafer.

[0017] In a preferred embodiment, the nozzle includes a first atomizing nozzle and a second atomizing nozzle.

[0018] In a preferred embodiment, the first atomizing nozzle includes a deionized water inlet, a nitrogen inlet, and a deionized water outlet, wherein the deionized water inlet and the nitrogen inlet are perpendicular to each other, and the deionized water inlet and the deionized water outlet coincide in the vertical direction; the second atomizing nozzle includes an electrical input end, a deionized water inlet end, a deionized water outlet end, and a piezoelectric ceramic and a sealing membrane located between the electrical input end and the deionized water inlet end, wherein the deionized water inlet end and the deionized water outlet end are perpendicular to each other.

[0019] The present invention also adopts the following technical solution:

[0020] A wafer washing device includes multiple chambers, including a washing and spin-drying integrated chamber, a single-sided washing chamber, a double-sided washing chamber, and a spin-drying chamber, wherein the washing and spin-drying integrated chamber has the aforementioned wafer washing device.

[0021] The present invention also adopts the following technical solution:

[0022] A wafer cleaning method, applied to the aforementioned wafer cleaning apparatus, includes the following steps:

[0023] Step S1: The robotic arm picks up the wafer and places it on the first chuck mechanism and the second chuck mechanism;

[0024] Step S2: Spray the chemical solution onto the wafer surface and use a double-sided brush to clean the wafer;

[0025] Step S3: The rotary disk rises to the lower surface of the wafer, the first chuck mechanism and the second chuck mechanism move away from each other to release the wafer, and the rotary disk drives the wafer to continue rising above the chuck mechanism;

[0026] Step S4: The rotating disk drives the wafer to rotate to dry the wafer.

[0027] The present invention adopts the above solution, which has the following advantages compared with the prior art:

[0028] The wafer washing device of the present invention first places the wafer on a chuck mechanism, which clamps the wafer and drives it to rotate. Then, a double-sided brush is used to wash the wafer on both sides. After the washing is completed, a rotating disk rises and supports the wafer. After the wafer falls onto the rotating disk, the first and second chuck mechanisms move away from each other. The rotating disk continues to rise above the chuck mechanism and drives the wafer to rotate at high speed to shake off the liquid on the wafer. The washing and drying of the wafer are completed in one go, with high working efficiency, convenient operation, and a small overall size. Attached Figure Description

[0029] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a top view schematic diagram of a wafer brushing device according to an embodiment of the present invention;

[0031] Figure 2 This is a perspective view of a wafer brushing apparatus according to an embodiment of the present invention;

[0032] Figure 3 for Figure 2 The side view shown;

[0033] Figure 4 for Figure 2 The top view shown;

[0034] Figure 5 This is a front view of a wafer brushing apparatus according to an embodiment of the present invention;

[0035] Figure 6 This is a schematic diagram of a double-sided brush;

[0036] Figure 7 A perspective view of a first atomizing nozzle according to an embodiment of the present invention;

[0037] Figure 8 for Figure 7 The top view shown;

[0038] Figure 9 for Figure 8 Sectional view at point AA along the middle;

[0039] Figure 10 This is a top view of the second atomizing nozzle according to an embodiment of the present invention;

[0040] Figure 11 for Figure 10 Sectional view at the middle edge BB.

[0041] in,

[0042] 100. Wafer washing equipment; 101. Washing and spin-drying integrated chamber; 1011. Wafer washing device; 102. Single-sided washing chamber; 103. Double-sided washing chamber; 104. Spin-drying chamber; 105. Water tank; 106. Robotic arm; 107. Conveyor table;

[0043] 200. Wafer;

[0044] 1. Rotary disk; 11. Support column; 12. Fixing frame; 121. Rotating shaft; 122. Clamping rod;

[0045] 2. Chuck mechanism; 21. First chuck mechanism; 22. Second chuck mechanism; 23. Mounting bracket; 231. Rotary roller;

[0046] 3. Double-sided brush; 31. Brush head; 32. Movable handle;

[0047] 4. Swing arm; 41. Nozzle; 42. First atomizing nozzle; 421. Deionized water inlet; 422. Nitrogen inlet; 423. Deionized water outlet; 43. Second atomizing nozzle; 431. Power input terminal; 432. Deionized water inlet terminal; 433. Deionized water outlet terminal; 434. Piezoelectric ceramic; 435. Sealing membrane; 5. Second drive mechanism. Detailed Implementation

[0048] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art. It should be noted that the description of these embodiments is for the purpose of aiding understanding the present invention, but does not constitute a limitation thereof. Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0049] Reference Figure 1As shown, this embodiment provides a wafer cleaning device 100, including multiple chambers, including a washing and spin-drying integrated chamber 101, a single-sided cleaning chamber 102, a double-sided cleaning chamber 103, and a spin-drying chamber 104. The wafer cleaning device 100 also includes a water tank 105, a robotic arm 106, and a conveyor table 107. The robotic arm 106 picks up the wafer from the conveyor table 107 and places it into the chamber. The water tank 105 is the "core workstation" of the semiconductor cleaning process, which can wet the wafer surface to improve cleaning efficiency; remove loose contaminants; and serve as a transition area between multiple cleaning steps (such as from acidic solution to alkaline solution), neutralizing residual chemical reagents on the wafer surface through pure water rinsing to avoid direct reaction between different reagents to generate new contaminants; dissolving organic / inorganic contaminants. Depending on the process requirements, specific chemical solutions may be added to the water tank. The water tank provides space for the wafer to soak and react, allowing the chemical reagents to fully react with and dissolve the contaminants, etc.

[0050] The integrated washing and spin-drying chamber is used to directly spin-dry the wafer after brushing, with brushing and spin-drying occurring in the same chamber. The single-sided brushing chamber 102 is used for brushing the wafer on one side; the double-sided brushing chamber 103 is used for brushing the wafer on both sides; and the spin-drying chamber 104 is used for spin-drying the brushed wafer. In actual operation, the appropriate chamber can be flexibly selected as needed. The single-sided brushing chamber 102, double-sided brushing chamber 103, and spin-drying chamber 104 are known prior art. This embodiment focuses on the wafer brushing device 1011 within the integrated washing and spin-drying chamber 101.

[0051] Reference Figures 2 to 11 As shown, the wafer brushing device 1011 includes a rotating disk 1, a chuck mechanism 2, a double-sided brush 3, a swing arm 4, a first drive mechanism, and a second drive mechanism 5.

[0052] Furthermore, the rotary disk 1 can drive the wafer 200 to rise, fall, and rotate. The rotary disk 1 is driven to rise, fall, and rotate by the second drive mechanism 5, which is specifically a servo lifting motor and a servo rotating motor. The servo lifting motor enables the rotary disk 1 to move in the vertical direction, and the servo rotating motor enables the rotary disk 1 to rotate in the horizontal direction.

[0053] The chuck mechanism 2 is used to clamp the wafer 200. The chuck mechanism 2 includes a first chuck mechanism 21 and a second chuck mechanism 22 that are arranged opposite to each other. The first chuck mechanism 21 and the second chuck mechanism 22 can move closer to each other or further away from each other. Specifically, the first drive mechanism drives them to move closer to each other or further away from each other. The first drive mechanism can be a cylinder or the like.

[0054] A double-sided brush 3 is used for double-sided cleaning of the wafer 200. The double-sided brush 3 is movably mounted on the wafer 200. The double-sided brush 3 has a movable rod 32 and brush heads 31 arranged vertically. During cleaning, the wafer 200 is positioned between the two brush heads, and the movable rod 32 drives the brush heads 31 to sweep the wafer 200. A swing arm 4 is equipped with multiple nozzles 41 for spraying chemical solutions onto the wafer 200. Specifically, the swing arm 4 has three nozzles, which can be configured to handle three different chemical solutions. During operation, taking photoresist residue as an example, the nozzles on the swing arm 4 spray the chemical solution onto the wafer to soften the contaminants. Then, the upper brush head of the double-sided brush 3 contacts the front side of the wafer, and the lower brush head contacts the back side of the wafer to clean both sides. Furthermore, the double-sided brush 3 simultaneously sprays chemical solutions or cleaning fluids while cleaning, forming a cleaning mechanism that combines mechanical friction and chemical dissolution.

[0055] Nozzle 41 includes a first atomizing nozzle 42 and a second atomizing nozzle 43. (See reference...) Figures 7 to 9 As shown, the first atomizing nozzle 42 includes a deionized water inlet 421, a nitrogen inlet 422, and a deionized water outlet 423. The deionized water inlet 421 and the nitrogen inlet 422 are perpendicular to each other, and the deionized water inlet 421 and the deionized water outlet 423 coincide in the vertical direction. The nitrogen flow rate is 60L / min-100L / min, and the deionized water flow rate is 0.5-2L / min. The special flow channel design allows the high-speed nitrogen to break down the deionized water, resulting in smaller particle size and higher flow rate liquid spraying out, achieving a better cleaning effect. More specifically, the nitrogen drives the deionized water to move in a spiral motion at the outlet, resulting in a finer sprayed solution.

[0056] refer to Figure 10 and Figure 11 As shown, the second atomizing nozzle 43 includes an electrical input terminal 431, a deionized water inlet terminal 432, a deionized water outlet terminal 433, and a piezoelectric ceramic 434 and a sealing membrane 435 located between the electrical input terminal 431 and the deionized water inlet terminal 432. The deionized water inlet terminal 432 and the deionized water outlet terminal 433 are perpendicular to each other. During operation, electricity is first applied, driving the piezoelectric ceramic to generate high-frequency vibration. This high-frequency vibration is transmitted to the sealing membrane, causing it to also generate high-frequency micro-vibration. At this time, deionized water is transported to the high-speed vibrating sealing membrane area. The high-frequency vibration of the sealing membrane breaks up the deionized water layer, producing an extremely fine spray. This fine spray is evenly sprayed onto the wafer surface, achieving efficient and uniform cleaning, etching, or other wet processing. In other words, the first atomizing nozzle 42 and the second atomizing nozzle 43 can achieve a finer spray of the cleaning solution, reaching deep into narrow crevices and other hard-to-reach areas, and the water flow is "gentler," less likely to damage the wafer, achieving a better cleaning effect.

[0057] The wafer 200 has brushing and spin-drying states. In the brushing state, the rotating disk 1 is located below the chuck mechanism 2, which clamps the wafer 200 and drives it to rotate. In the spin-drying state, the rotating disk 1 is located above the chuck mechanism 2, which drives the wafer 200 to rotate. Further, the chuck mechanism 2 has a mounting frame 23 and multiple rotating rollers 231 mounted on the mounting frame 23. In the brushing state, the wafer 200 is clamped between the multiple rotating rollers 231, and the multiple rotating rollers 231 drive the wafer 200 to rotate. It should be noted that the rotation of the rotating rollers can be achieved by a motor or other drive mechanism, which is existing technology and not the focus of this invention, so it will not be elaborated here. Even further, three rotating rollers are evenly distributed on the mounting frame of the first chuck mechanism 21, and three rotating rollers are evenly distributed on the second chuck mechanism 22. The wafer 200 is clamped between six rotating rollers, as shown in the reference. Figure 3 As shown, the central structure of the rotating roller 231 is similar to a V-shape, and the wafer 200 is held in the gap of the V-shape. In this embodiment, the number of rotating rollers is not limited and is not limited to six.

[0058] Combination Figure 2 and Figure 3 As shown, the rotating disk 1 has multiple support pillars 11 arranged around its circumference. During the spin-drying process, the support pillars 11 support the lower surface of the wafer 200. (Refer to...) Figure 3 As shown, the upper end of the support column is tapered, and the top of the tapered column contacts the lower surface of the wafer. This ensures the support effect while minimizing the contact area with the wafer, thus preventing the freshly cleaned wafer from being contaminated.

[0059] Furthermore, combined Figure 2 As shown, the rotating disk 1 is also equipped with multiple fixing frames 12. The fixing frames 12 are L-shaped, with a horizontal part and a vertical part. The support 11 is set on the horizontal part, and the vertical part is equipped with a rotating shaft 121 and a clamping rod 122 that rotates around the rotating shaft 121. More specifically, the rotating shaft 121 is set in the middle of the vertical part. In the spin-drying state, the clamping rod 122 clamps the edge of the wafer 200, causing the wafer 200 to rotate at high speed. Furthermore, during the rotation, the lower end of the clamping rod 122 moves away from the center of the wafer due to centrifugal force. At this time, the upper end of the clamping rod 122 moves towards the center of the wafer and eventually contacts the edge of the wafer.

[0060] This embodiment also provides a wafer cleaning method, including the following steps:

[0061] Step S1: The robotic arm picks up the wafer and places it on the first chuck mechanism 21 and the second chuck mechanism 22;

[0062] Step S2: Spray the chemical solution onto the surface of wafer 200 and scrub the wafer with a double-sided brush 3;

[0063] Step S3: The rotary disk 1 rises to the lower surface of the wafer 200, the first chuck mechanism 21 and the second chuck mechanism 22 move away from each other to release the wafer 200, and the rotary disk 1 continues to rise above the chuck mechanism 2.

[0064] Step S4: Rotating disk 1 drives wafer 200 to rotate to dry wafer 200.

[0065] In step S1, the first drive mechanism drives the first chuck mechanism 21 and the second chuck mechanism 22 to move away from each other. Then, the robot places the wafer between the first chuck mechanism 21 and the second chuck mechanism 22. Next, the first drive mechanism drives the first chuck mechanism 21 and the second chuck mechanism 22 to move closer together to clamp the wafer. In step S2, the nozzle 41 on the swing arm 4 sprays a chemical solution onto the wafer 200. While the double-sided brush 3 is cleaning the wafer 200, it also sprays a chemical solution or water onto the wafer 200. In step S3, when the rotating disk 1 drives the wafer 200 to rise above the chuck mechanism 2, if the wafer 200 is not clean, the liquid can still be sprayed. In this case, the first atomizing nozzle 42 and / or the second atomizing nozzle 43 are preferred. In step S4, the rotation speed of the rotating disk 1 is 1000-4000 r / min. Specifically, in this embodiment, the rotation speed of the rotating disk 1 is 3000 r / min. The principle of wafer spin drying is that the centrifugal force generated during the high-speed rotation of the wafer drives the liquid to detach from the wafer surface.

[0066] The wafer washing device and method of this embodiment can spin-dry the wafer immediately after washing. Both washing and spin-drying are completed in the same cavity, which not only avoids contamination, but also has a small footprint, is easy to operate, and has high work efficiency.

[0067] As indicated in this specification and claims, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, and these steps and elements do not constitute an exclusive list; the method or apparatus may also include other steps or elements. The term "and / or" as used herein includes any combination of one or more of the associated listed items.

[0068] It should be noted that, unless otherwise specified, when a feature is referred to as "fixed" or "connected" to another feature, it can be directly fixed or connected to the other feature, or indirectly fixed or connected to the other feature. Furthermore, the descriptions of "up," "down," "left," and "right" used in this invention are only relative to the relative positional relationships of the various components of the invention in the accompanying drawings.

[0069] The above embodiments are merely illustrative of the technical concept and features of the present invention, and are preferred embodiments. Their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and they should not be construed as limiting the scope of protection of the present invention. All equivalent transformations or modifications made according to the principles of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A wafer brushing device, characterized in that, include: A rotating disk that can drive the wafer to rise, fall, and rotate; A chuck mechanism for holding a wafer, the chuck mechanism including a first chuck mechanism and a second chuck mechanism disposed opposite to each other, the first chuck mechanism and the second chuck mechanism being able to move closer to or further away from each other; A double-sided brush for cleaning wafers on both sides, the double-sided brush being movably disposed on the wafer; The wafer has a brushing and spin-drying state. In the brushing state, the rotating disk is located below the chuck mechanism, and the chuck mechanism clamps the wafer and drives the wafer to rotate. During the spin-drying state, the rotary disk is located above the chuck mechanism, and the rotary disk drives the wafer to rotate.

2. The wafer brushing apparatus according to claim 1, characterized in that, The chuck mechanism is provided with a mounting frame and a plurality of rotating rollers disposed on the mounting frame. In the brushing state, the wafer is clamped between the plurality of rotating rollers and the plurality of rotating rollers drive the wafer to rotate.

3. The wafer brushing apparatus according to claim 1, characterized in that, The rotating disk is provided with multiple support columns, which support the lower surface of the wafer during the spin-drying state.

4. The wafer brushing apparatus according to claim 3, characterized in that, The support column is arranged around the circumference of the rotating disk.

5. The wafer brushing apparatus according to claim 4, characterized in that, The rotating disk is also provided with multiple fixed frames, each fixed frame having a rotating shaft and a clamping rod that rotates around the rotating shaft. In the spin-drying state, the clamping rod clamps the edge of the wafer.

6. The wafer brushing apparatus according to claim 1, characterized in that, The wafer brushing device also includes a swing arm with multiple nozzles for spraying chemical solution onto the wafer.

7. The wafer brushing apparatus according to claim 6, characterized in that, The nozzle includes a first atomizing nozzle and a second atomizing nozzle.

8. The wafer brushing apparatus according to claim 7, characterized in that, The first atomizing nozzle includes a deionized water inlet, a nitrogen inlet, and a deionized water outlet. The deionized water inlet and the nitrogen inlet are perpendicular to each other, and the deionized water inlet and the deionized water outlet coincide in the vertical direction. The second atomizing nozzle includes an electrical input end, a deionized water inlet end, a deionized water outlet end, and a piezoelectric ceramic and a sealing membrane located between the electrical input end and the deionized water inlet end. The deionized water inlet end and the deionized water outlet end are perpendicular to each other.

9. A wafer brushing device, characterized in that, It includes multiple chambers, including a washing and spin-drying integrated chamber, a single-sided brushing chamber, a double-sided brushing chamber, and a spin-drying chamber, wherein the washing and spin-drying integrated chamber has the wafer brushing device as described in any one of claims 1 to 8.

10. A wafer washing method, characterized in that, The wafer brushing apparatus according to any one of claims 1 to 8 comprises the following steps: Step S1: The robotic arm picks up the wafer and places it on the first chuck mechanism and the second chuck mechanism; Step S2: Spray the chemical solution onto the wafer surface and use a double-sided brush to clean the wafer; Step S3: The rotary disk rises to the lower surface of the wafer, the first chuck mechanism and the second chuck mechanism move away from each other to release the wafer, and the rotary disk drives the wafer to continue rising above the chuck mechanism; Step S4: The rotating disk drives the wafer to rotate to dry the wafer.

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