Wafer debonding device

Abstract

The invention discloses a wafer counter-de-bonding device. The wafer counter-de-bonding device comprises a workbench, a cutting line and a winding bracket, the workbench is used for placing a wafer pair to be de-bonded and fixing the wafer pair, and the wafer pair is bonded through an adhesive layer; the winding support is installed on the workbench in a sliding mode, and the cutting line is installed on the workbench through the winding support and is aligned with an adhesive layer of the wafer pair. The winding support is driven to drive the cutting line to move parallel to the wafer pair in a manual mode or a power source driving mode, and the moving path of the cutting line passes through the adhesive layer of the wafer pair so that de-bonding can be carried out. The beneficial effects of the present application are that the wafer pair is separated by arranging the cutting line to directly cut the adhesive layer, and the contact area with the adhesive layer in the cutting process can be effectively reduced. Moreover, due to the intervention of the cutting line, chemical de-bonding can be changed into turbulent flow driving, so that the de-bonding speed is increased, the quality is improved, and the application range is widened.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, and in particular to a wafer pair debonding device. BACKGROUND

[0002] In the microelectronics industry, advanced packaging technologies have been widely used in the manufacture of sensors and other electronic devices. Typical representatives include through-silicon via (TSV) based semiconductor wafer 2.5D or 3D stacked chips, fan-out wafer level packaging (FOWLP) or fan-out panel level packaging (FOPLP), and embedded packaging and system-in-package (SiP). Thin wafers are required in these technology processes; the advantages of thin wafers are improved heat dissipation, three-dimensional stacking, reduced resistance, and substrate flexibility. Many consumer products also require ultra-thin semiconductor wafers, with thickness requirements as low as 100 μm or less. Through-silicon via (TSV) belongs to wafer level packaging (WLP), which can help reduce the size of the package, making it easier to integrate into mobile electronic products.

[0003] In the process of manufacturing through-silicon via (TSV) for 3D or 2.5D stacking, the wafer thinning process is mainly achieved by grinding. Because ultra-thin wafers are very unstable, they are more susceptible to pressure than traditional wafers. During the grinding process of the wafer, cracks and warping may occur. Therefore, when the wafer thinning process is performed, a temporary bonding technique is often used for support. Specifically, the device wafer that needs to be thinned is supported on a rigid carrier wafer through adhesion, and then the device wafer is fixed by the carrier wafer, so that the device wafer can be thinned by chemical etching or mechanical grinding in the subsequent process. After the thinning of the device wafer is completed, the wafer pair formed by the adhesion of the device wafer and the carrier wafer needs to be debonded.

[0004] The debonding methods commonly used in advanced packaging and other related fields mainly include chemical stripping, thermal sliding or shear stripping, laser stripping, and mechanical stripping. These four methods have the following defects when used: laser debonding can only contact the glass through the adhesive, which is not only expensive but also does not conform to the first principle, and changes the chemical properties of the adhesive, thereby losing recyclability. The methods of chemical, thermal sliding, and mechanical stripping basically conform to the first principle, but chemical debonding is too slow due to the limitation of laminar flow; thermal sliding debonding is slow and has a high probability of damage because the adhesive needs to move relative to the entire wafer pair, and the relative viscosity of the molten polymer is large (compared to water); mechanical debonding is also limited by factors such as the large debonding area of the adhesive and the wafer pair, thereby limiting its large-scale application. Therefore, there is an urgent need for a debonding device that can overcome the above technical defects. SUMMARY

[0005] One of the purposes of the present application is to provide a wafer pair debonding device capable of solving at least one defect in the background art.

[0006] To achieve the above at least one purpose, the technical solution adopted by the present application is: a wafer pair debonding device, comprising a workbench, a cutting line and a wire winding support; the workbench is used to place and fix a wafer pair to be debonded, and the wafer pair is bonded by an adhesive layer; the wire winding support is slidingly installed on the workbench, and the cutting line is installed on the workbench through the wire winding support and is aligned with the adhesive layer of the wafer pair; the wire winding support drives the cutting line to move parallel to the wafer pair by manual or power source driving mode, and the movement path of the cutting line passes through the adhesive layer of the wafer pair to perform debonding.

[0007] Preferably, the cutting line translates along a first direction parallel to the wafer pair.

[0008] Preferably, the cutting line translates along a first direction parallel to the wafer pair, and simultaneously the cutting line reciprocally translates or unidirectionally translates along a second direction parallel to the wafer pair; wherein the first direction and the second direction are perpendicular to each other.

[0009] Preferably, the first end position of the cutting line is fixed, and the cutting line rotates around the first end along a direction parallel to the wafer pair.

[0010] Preferably, the cutting line and the wafer pair are adapted to perform relative unidirectional continuous rotation around the geometric center of the wafer pair, and the distance between the cutting line and the geometric center of the wafer pair gradually decreases during the debonding process.

[0011] Preferably, the cutting line and the wafer pair are adapted to perform reciprocating swing at a set angle, and the distance between the cutting line and the geometric center of the wafer pair gradually changes during the debonding process.

[0012] Preferably, the thickness of the cutting line is less than 10 times the thickness of the adhesive layer.

[0013] Preferably, the cutting line adopts a rigid structure and is in a sheet type or a saw type as a whole.

[0014] Preferably, the cutting line adopts a flexible structure and is in a wire type or a sheet type as a whole; for the wire type cutting line, a single wire or a multi-wire winding is adopted, and for the sheet type cutting line, a multi-wire winding is adopted and is flattened.

[0015] Preferably, the material of the cutting line is one or a combination of more than one of synthetic or natural polymer materials, metal materials, ceramic or inorganic materials, and composite materials.

[0016] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0017] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0018] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0019] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0020] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0021] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0022] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0023] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0024] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0025] Preferably, the wire winding support is in an arc shape, and the cutting wire is tensioned at two ends of the wire winding support.

[0026] Preferably, the workbench comprises a machine body, a placement table and a clamping device; the placement table is installed on the machine body, and a wafer pair to be debonded is placed on the placement table; and the clamping device is used for positioning and clamping the wafer pair placed on the placement table.

[0027] Preferably, the upper end surface of the placement table is provided with uniformly distributed grooves, the grooves are communicated with the lower end surface of the placement table through connecting ports; the wafer pair to be debonded is placed on the upper end surface of the placement table and covers the grooves; the clamping device adopts a suction device, the suction device is installed in the machine body and connected with the connecting ports through a working port, and the suction device is used for vacuumizing the grooves.

[0028] Preferably, the placement table is installed on the machine body through one side damping rotation; or, a rotating device installed on the machine body is drivingly connected with one side of the placement table; and the placement table is adapted to deflect up and down by 0-180° around the machine body.

[0029] Preferably, the workbench further comprises a heating device, the heating device is installed on the placement table, and the heating device is used for heating the wafer pair to be debonded placed on the placement table.

[0030] Preferably, the workbench further comprises a cooling device, the cooling device is installed on the machine body or the placement table, and the cooling device is used for cooling the wafer pair to be debonded placed on the placement table.

[0031] Preferably, the wafer pair debonding device further comprises a solvent spraying mechanism, the solvent spraying mechanism is used for spraying chemical solvent to the wafer pair to be debonded placed on the workbench; the chemical solvent is used for dissolving the adhesive layer at the edge of the wafer pair, and the cutting line is adapted to cut along the dissolved position of the adhesive layer.

[0032] Preferably, the solvent spraying mechanism comprises a nozzle, a liquid reservoir and a driving pump; the liquid reservoir is used for containing the chemical solvent, the nozzle is installed on the side of the workbench and faces the adhesive layer of the wafer pair; the input end and the output end of the driving pump are connected with the liquid reservoir and the nozzle respectively, and the driving pump is used for pumping the chemical solvent in the liquid reservoir to the nozzle to be sprayed to the edge of the adhesive layer.

[0033] Preferably, a plurality of nozzles are provided, and the plurality of nozzles are arranged at equal intervals along the circumferential direction of the wafer pair.

[0034] Preferably, the side of the workbench is provided with a solvent collecting groove for converging the sprayed chemical solvent; the solvent collecting groove is communicated with the input end of the driving pump.

[0035] Preferably, the solvent spraying mechanism further comprises a solvent heater for heating the chemical solvent which is not sprayed.

[0036] Preferably, the wafer pair debonding device further comprises a grabbing mechanism mounted on the workbench; the grabbing mechanism grabs the wafer on the upper layer of the wafer pair through a grabbing end, and the grabbing mechanism is adapted to drive the grabbed wafer to move parallel to the wafer pair or rotate.

[0037] Preferably, the grabbing mechanism comprises a suction assembly and a driving arm; the driving arm is movably mounted on the side of the workbench, and the suction assembly is mounted on the driving arm; wherein the suction assembly is used to suck the wafer on the upper layer of the wafer pair, and the driving arm is used to drive the suction assembly to move.

[0038] Preferably, the driving arm comprises a connecting arm arranged parallel to the wafer pair, the connecting arm is rotatably mounted on the workbench through a first end, and the suction assembly is mounted on a second end of the connecting arm.

[0039] Preferably, the driving arm further comprises a rotary driver fixedly mounted on the workbench and connected with the first end of the connecting arm through a driving end; the rotary driver is used to drive the connecting arm to move the suction assembly.

[0040] Preferably, the suction assembly comprises a suction disc and a second elastic member; the suction disc is slidably mounted on the second end of the driving arm along the axial direction of the wafer pair through a guide rod, and the guide rod and the driving arm are connected through the second elastic member; wherein the initial height of the suction disc is above the wafer pair, and the suction disc is pressed to suck the wafer on the upper layer of the wafer pair by pressing the guide rod.

[0041] Preferably, the suction assembly comprises a suction disc and a telescopic driver; the telescopic driver is fixedly mounted on the second end of the driving arm, and the suction disc is mounted on the driving end of the telescopic driver along the axial direction of the wafer pair; wherein the initial height of the suction disc is above the wafer pair, and the telescopic driver is used to drive the suction disc to approach and suck the wafer on the upper layer of the wafer pair.

[0042] Preferably, the number of the suction cups is multiple; the suction assembly further comprises a connecting frame provided with multiple extension ends corresponding to the number of the suction cups; the connecting frame is fixedly installed at the second end of the driving arm, and the suction cups are slidingly installed at the extension ends via the guide rods, and the guide rods and the extension ends are connected via the second elastic members.

[0043] Preferably, the number of the suction cups is multiple; the suction assembly further comprises a connecting frame provided with multiple extension ends corresponding to the number of the suction cups; the connecting frame is fixedly installed at the second end of the driving arm, and the suction cups are slidingly installed at the extension ends via the guide rods, and the guide rods and the extension ends are connected via the second elastic members.

[0044] Preferably, the suction assembly further comprises an air pump, and the working end of the air pump is connected with the suction cups; the air pump controls the suction and release of the suction cups to the upper wafer of the wafer pair via air suction and air exhaust.

[0045] Preferably, the wafer pair debonding device further comprises a control screen installed at the workbench, and the control screen controls the wafer pair debonding process via an internal control system.

[0046] Preferably, one side of the workbench is rotatably installed with a protective cover for protecting the wafer pair debonding process, and the protective cover is made of transparent material.

[0047] Preferably, the wafer pair debonding device further comprises an alarm lamp and an emergency stop button installed at the workbench; the alarm lamp is used for alarming the failure of the wafer pair debonding process; and the emergency stop button is used for stopping the wafer pair debonding device.

[0048] Compared with the prior art, the wafer pair debonding device has the following beneficial effects: Compared with the traditional method, the wafer pair is separated by directly cutting the adhesive layer via the cutting line, which can effectively reduce the contact area with the adhesive layer in the cutting process. Moreover, the intervention of the cutting line can change the chemical debonding into turbulent flow driving, thereby improving the speed, quality and application range of the debonding. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 Process flow diagram for thinning process of device wafer.

[0050] Figure 2 Overall structure schematic diagram of one embodiment of the present application.

[0051] Figure 3 Structure schematic diagram of the machine body in the present application.

[0052] Figure 4 Structure diagram of one of the examples of the placement table in the present application.

[0053] Figure 5 Structure diagram of another example of the placement table in the present application.

[0054] Figure 6 Structure diagram of the wafer pair positioning and clamping by the clamping block in the present application.

[0055] Figure 7 State diagram of the placement table rotating around the mounting position in the present application.

[0056] Figure 8 State diagram of the unbonding of the cutting line by translation in the present application.

[0057] Figure 9 State diagram of the unbonding of the cutting line by rotation in the present application.

[0058] Figure 10 State diagram of the unbonding of the cutting line by rotation around the geometric center of the wafer pair in the present application.

[0059] Figure 11 State diagram of the unbonding of the cutting line by rotation around the wafer pair at a set angle in the present application.

[0060] Figure 12 Structure diagram of the solvent spraying mechanism in the present application.

[0061] Figure 13 Structure diagram of different types of cutting lines in the present application.

[0062] Figure 14 Structure diagram of different structures of the cutting line installation on the winding support in the present application.

[0063] Figure 15 Structure diagram of the cutting line installation by two winding supports in the present application.

[0064] Figure 16 Structure diagram of the cutting line tensioning by the automatic winding device in the present application.

[0065] Figure 17 Structure diagram of the guide frame in the present application.

[0066] Figure 18 Structure diagram of the winding support installation on the driving mechanism in the present application.

[0067] Figure 19 Partial installation structure diagram of the first displacement device and the second displacement device in the present application.

[0068] Figure 20 Structure diagram of one of the grabbing mechanisms in the present application.

[0069] Figure 21 Diagram of the state in which the chuck holds the upper wafer of the wafer pair in the present application.

[0070] Figure 22 Diagram of the state in which the grabbing mechanism takes away the upper wafer of the wafer pair in the present application.

[0071] Figure 23 Structure diagram of another example of the grabbing mechanism in the present application.

[0072] Figure 24 Diagram of the state in which the chuck holds the upper wafer of the wafer pair in the present application.

[0073] In the figure: wafer pair 01, adhesive layer 011, adhesive 0111, wafer 012, carrier wafer 0121, device wafer 0122, workbench 1, machine body 11, table top 110, solvent collection groove 111, support area 112, open groove 113, sliding groove 114, mounting groove 115, vertical surface 116, air outlet 117, placement table 12, recess 120, annular groove 1201, straight groove 1202, connecting port 121, hinged seat 122, positioning groove 123, cooling device 13, protective cover 14, air inlet 140, control screen 15, alarm light 16, emergency stop button 17, vacuum pressure gauge 18, adsorption device 19, clamping block 19a, flexible part 190a, driving source 19b, wire winding bracket 3, bracket body 31, guide bracket 311, guide port 3110, winding roller 32, first rotary driver 33, displacement mechanism 34, first displacement device 34a, second displacement device 34b, second rotary driver 341, lead screw 342, sliding block 343, mounting seat 344, cutting wire 200, solvent spraying mechanism 4, pipeline 40, driving pump 41, nozzle 42, solvent heater 43, grabbing mechanism 5, driving arm 51, connecting arm 511, rotating shaft 512, third rotary driver 513, adsorption assembly 52, chuck 521, connecting sleeve 5211, air pipe interface 5212, guide rod 522, spring 523, telescopic driver 524, mounting bracket 525, connecting bracket 526. DETAILED DESCRIPTION

[0074] Hereinafter, the present application will be further described with reference to the specific embodiments, it should be noted that in the description of the present specification, the description referring to the terms "one embodiment", "some embodiments", "an example", "a specific example" or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present specification.

[0075] In the description of the present application, it should be noted that for orientation words such as the terms "center", "transverse", "longitudinal", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate the orientation and positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and cannot be understood as limiting the specific protection scope of the present application.

[0076] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application are used to distinguish similar objects, and do not necessarily have to describe a specific order or sequence.

[0077] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be connected, or detachable, or integrated; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0078] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0079] The terms “comprising” and “having”, and any variations thereof, in the specification and claims of this application are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0080] To facilitate understanding of the technical solution of this application, the thinning process of the device wafer will be described in detail below.

[0081] Before performing the thinning process on the 0122 wafer of the device, such as Figure 1 As shown, a suitable carrier wafer 0121 can be selected, and then an adhesive 0111 is coated on one end face of the carrier wafer 0121. Then, the unprocessed side of the device wafer 0122 to be processed is attached to the end face of the carrier wafer 0121 coated with adhesive 0111. After applying a certain pressure, the adhesive 0111 can be cured to fix the device wafer 0122 and the carrier wafer 0121 to form a wafer pair 01. That is, the wafer pair 01 includes two wafers 012 (device wafer 0122 and carrier wafer 0121) and an adhesive layer 011 formed by the cured adhesive 0111.

[0082] In the process of thinning the device wafer 0122, the carrier wafer 0121 in the wafer pair 01 can be fixed, and then the processing surface of the device wafer 0122 is thinned by polishing or chemical etching, etc. Finally, the device wafer 0122 with the required thickness is obtained, which is applied to PVD, CVD, coating, lithography, wiring, etc. Semiconductor or wafer or board level packaging process operation scenarios. After obtaining the device wafer 0122 with the required thickness, the adhesive layer 011 in the wafer pair 01 needs to be destroyed to separate the device wafer 0122 and the carrier wafer 0121. This process is called debonding. After completing the debonding of the wafer pair 01, the adhesive 0111 adhered to the surface of each wafer 012 can be cleaned, and finally the device wafer 0122 monomer with the required thickness is obtained.

[0083] It should be known that there are mainly four ways for debonding in the prior art, which are chemical debonding, thermal sliding or shear debonding, laser debonding and mechanical debonding.

[0084] The chemical debonding method is to immerse the wafer pair 01 in a solvent to remove the thermoplastic adhesive layer 011 by the solvent. This method can be applied to scenarios where the debonding speed is not high.

[0085] The thermal sliding or shear debonding method is to heat the wafer pair 01 to above the softening temperature of the adhesive layer 011, and then apply opposite shear forces to the two wafers 012 respectively, so that they slowly slide relative to each other until the structure is separated. Due to the high viscosity of the softened adhesive layer 011, the debonding process is difficult to run quickly.

[0086] The laser debonding method is to coat the adhesive 0111 to the polymer laser sensitive layer on the surface of the carrier wafer 0121 when coating the adhesive 0111. Thus, when debonding, the carrier wafer 0121 in the wafer pair 01 is irradiated and scanned by laser, so that the polymer laser sensitive layer is burned and decomposed, which greatly reduces the adhesion of the adhesive layer 011 to achieve debonding. This method must be used with the polymer laser sensitive layer, which cannot be recycled, and the laser ablation will produce difficult-to-clean residues.

[0087] The mechanical debonding method is to initiate a crack in the adhesive layer 011 at the edge of the wafer pair 01 structure, and then use very low force to make the crack propagate through the entire interface between the layers to cause the separation of the two wafers 012. This method is relatively rough and can easily damage the device wafer 0122, and the debonding process can be slow.

[0088] Based on the defects of the existing debonding methods, the present application provides a wafer pair debonding device different from the existing debonding methods, which can realize rapid debonding of the wafer pair 01. As shown in Figure 2 and Figure 5 A preferred embodiment includes a workbench 1, a cutting line 200, and a winding support 3. The workbench 1 is used to place and fix the wafer pair 01 to be debonded, and the wafer pair 01 is bonded by an adhesive layer 011. The winding support 3 is slidingly installed on the workbench 1, and the cutting line 200 is installed on the workbench 1 through the winding support 3 and is aligned with the adhesive layer 011 of the wafer pair 01.

[0089] When debonding of the wafer pair 01 is needed, the wafer pair 01 bonded by the adhesive layer 011 can be placed on the workbench 1 at the set position. The specific placement of the wafer pair 01 can be that the carrier wafer 0121 is in contact with the workbench 1, or that the device wafer 0122 is in contact with the workbench 1, which can be selected by the person skilled in the art according to the actual needs. After the wafer pair 01 is placed, the workbench 1 can fix the wafer pair 01 by a specific fixing method. After the wafer pair 01 is fixed, the winding support 3 can drive the cutting line 200 to move parallel to the wafer pair 01 by manual or power source driving, and the moving path of the cutting line 200 passes through the adhesive layer 011 of the wafer pair 01 for debonding.

[0090] It can be understood that the technical scheme of the present application realizes the separation of the wafer pair 01 by directly cutting the adhesive layer 011 through the cutting line 200. Since the thickness of the cutting line 200 is generally thin, compared with the traditional mechanical debonding method, the contact area can be reduced by at least several orders of magnitude through the contact between the cutting line 200 and the adhesive layer 011, so that the damage to the device wafer 0122 and the carrier wafer 0121 can be effectively reduced during the debonding process, and the debonding efficiency can be effectively improved.

[0091] It should be understood that the wafer pair debonding device of the present application can be applied to a portable scenario, and can also be applied to an automated mass production scenario. In the portable scenario, due to limited installation space, the driving process of the cutting line 200 for debonding can be manually performed, and of course can also be driven by an additional power source, which can be one of motor drive, pneumatic drive and hydraulic drive. In the automated mass production scenario, the debonding driving process of the cutting line 200 is generally driven by an additional power source, which can be one of motor drive, pneumatic drive and hydraulic drive. Among them, when the additional power source is selected to drive the cutting line 200 in the portable scenario, the pneumatic drive and hydraulic drive methods need to configure additional gas and hydraulic sources, which may cause the installation space to be cramped; therefore, when the cutting line 200 is driven by a power source in the portable scenario, the motor drive method is preferred. In order to simplify the description process, the technical solution of the present application will be illustrated with the specific structure of the portable scenario.

[0092] It should be noted that in the technical solution of the present application, the wafer pair 01 fixedly placed on the workbench 1 for debonding can be a generally circular wafer pair 01, or a rectangular wafer pair 01, or a wafer pair 01 reconstructed by multiple wafer pieces. Specifically, as in the application scenario of board-level packaging, the device wafer 0122 can be rectangular or square; therefore, when the corresponding wafer pair 01 is made, a corresponding rectangular carrier wafer 0121 is also needed to support the device wafer 0122, so that a wafer pair 01 with a whole rectangular shape can be obtained. In the application scenario of fan-out packaging, multiple wafer pieces or chips need to be arranged on the surface of the carrier wafer 0121 according to the set pitch and recombined by a molding material such as epoxy resin, and then processed by wiring, coating, and insulator plating, etc. to obtain a reconfigured wafer pair adhered by epoxy resin. That is, the wafer pair debonding device of the present application can debond a circular wafer pair 01, a reconfigured wafer pair, and a rectangular wafer pair 01. In order to simplify the description of the subsequent content, the following will be described in detail with the wafer pair 01 as a circular example.

[0093] In some embodiments, as shown in Figure 2 and Figure 3 The workbench 1 includes a machine body 11, a placement table 12 and a clamping device. The specific structure of the machine body 11 is different according to different application scenarios; in the portable scenario, the machine body 11 can adopt, for example, Figure 2 and Figure 3The box structure is shown; and in the automated batch production scene, the machine body 11 can be a shell structure or a frame structure. The placement table 12 is installed on the machine body 11 for placing the wafer pair 01 to be debonded; in order to facilitate the installation of the placement table 12, at least a flat table top 110 is provided on the machine body 11, and the placement table 12 can be installed on the table top 110. After the placement of the wafer pair 01 is completed, in order to ensure the smooth progress of the debonding process, it is necessary to ensure that the wafer pair 01 remains stationary relative to the placement table 12 during the debonding process, so that the clamping device is provided to clamp and position the wafer pair 01 to be debonded placed on the placement table 12.

[0094] It can be understood that the specific structure of the clamping device capable of clamping and positioning the wafer pair 01 placed on the placement table 12 is various, and in order to facilitate understanding, a detailed description can be made.

[0095] In some embodiments, as shown in Figures 4-5 The upper end surface of the placement table 12 is provided with uniformly distributed grooves 120, and the grooves 120 are communicated with the lower end surface of the placement table 12 through connecting ports 121. The wafer pair 01 to be debonded is placed on the upper end surface of the placement table 12 and covers the grooves 120. The middle part of the table top 110 of the machine body 11 is provided with an opening slot 113; the clamping device can adopt a suction device 19, which is installed in the machine body 11 and has a working port passing through the opening slot 113 and connected with the connecting port 121. The suction device 19 is used to vacuum the grooves 120, so that the wafer 012 on the lower layer of the wafer pair 01 is adsorbed through the negative pressure formed in the grooves 120, so as to ensure that the wafer pair 01 can remain stationary relative to the placement table 12 during the debonding process.

[0096] It is understood that the specific structure and working principle of the adsorption device 19 are well-known to those skilled in the art. In this embodiment, an air pump is preferably used for the adsorption device 19. It should be noted that wafer pairs 01 of different diameters or masses have different weights; therefore, the negative pressure generated by the adsorption device 19 needs to be adapted according to the specific type of wafer pair 01. Factors affecting the negative pressure generated by the adsorption device 19 include the power of the adsorption device 19 and the distribution structure and depth of the grooves 120. That is, when facing different types of wafer pairs 01, the power of the adsorption device 19 can be adjusted and / or the placement stage 12 with grooves 120 having different distribution structures and / or depths can be replaced. It should be noted that for circular wafer pairs 01, the corresponding grooves 120 are also circular; in this case, the geometric center of the groove 120 is the center of the circle, and its radial direction is the radius. For rectangular wafer pairs 01, the corresponding grooves 120 are also rectangular; in this case, the geometric center of the groove 120 is the intersection of the diagonals, and its radial direction refers to the direction extending outward from the geometric center point. To facilitate understanding, a circular groove will be used as an example for specific explanation below; there are multiple specific implementation methods for the groove 120 distribution structure, and two specific examples will be used for detailed explanation below.

[0097] Example 1: such as Figure 4 As shown, the groove 120 includes at least one annular groove 1201 and multiple straight grooves 1202. The specific number of annular grooves 1201 can be adapted to the structural dimensions of the wafer pair 01; generally, to ensure stable adsorption of the wafer pair 01, multiple annular grooves 1201 are provided, with their geometric center points coinciding and arranged at equal intervals from the outside to the inside. The straight grooves 1202 extend radially along the annular grooves 1201, with a single straight groove 1202 passing sequentially through all the annular grooves 1201 to connect all the annular grooves 1201 to the connection port 121. To ensure a balanced negative pressure formed by the annular grooves 1201 along the circumferential direction, multiple straight grooves 1202 are generally provided, and they are arranged at equal intervals along the circumferential direction of the annular grooves 1201.

[0098] One specific embodiment, such as Figure 4 As shown, there are four annular grooves 1201 and four straight grooves 1202. One end of each of the four straight grooves 1202 is connected to the annular groove 1201 with the largest diameter, and the other ends of the four straight grooves 1202 converge at the geometric center of the annular groove 1201. Therefore, the connection port 121 is also located at the geometric center of the annular groove 1201.

[0099] It is important to note that the diameter of the largest annular groove 1201 should be slightly smaller than the diameter of the wafer pair 01 to be debonded. This ensures that a relatively sealed negative pressure formation structure is created by covering all annular grooves 1201 with wafer pair 01, thus facilitating stable vacuuming by the adsorption device 19. After the debonding of wafer pair 01 is completed, the adsorption device 19 can be shut down to release the negative pressure formed by the grooves 120 on the wafer 012 beneath wafer pair 01, facilitating the subsequent recovery of wafer 012.

[0100] Example 2: such as Figure 5 As shown, multiple grooves 120 are provided in a fan shape, and the multiple grooves 120 can be arranged around each other to form a circular negative pressure path. The diameter of this circular negative pressure path is slightly smaller than the diameter of the wafer pair 01 to ensure that a relatively sealed negative pressure forming structure is constructed by covering the grooves 120 with the wafer pair 01, thereby facilitating the adsorption device 19 to stably achieve vacuuming. The converging end of all the grooves 120 is connected to the connection port 121 located at the center point of the circular negative pressure path. The specific number of grooves 120 and the central angle corresponding to a single groove 120 can be selected according to the actual needs of those skilled in the art. One specific embodiment is as follows: Figure 5 As shown, there are eight grooves 120, and the central angle of each groove 120 is 20°.

[0101] It is understood that both of the above examples can meet the needs of this application, and those skilled in the art can choose according to actual needs. In this embodiment, Example 1 is preferred. Furthermore, to further enhance the positioning effect of the placement stage 12 on wafer pair 01, such as... Figure 4 and Figure 5 As shown, a recessed positioning groove 123 can be provided on the end face of the placement stage 12. The depth of the positioning groove 123 is less than or equal to the thickness of the wafer 012 under the wafer pair 01. A groove 120 is provided in the positioning groove 123. The diameter of the positioning groove 123 is equal to or slightly larger than the diameter of the wafer pair 01.

[0102] In other embodiments, such as Figure 6 As shown, the clamping device may include multiple clamping blocks 19a, which can be arranged around each other so that the end faces of the multiple clamping blocks 19a are tangent to the same circumference, and the multiple clamping blocks 19a can be spaced apart along the circumferential direction; each clamping block 19a can be slidably mounted on the placement stage 12 in the radial direction. After the wafer pair 01 is placed on the placement stage 12, each clamping block 19a can be driven to retract radially until the end face of each clamping block 19a abuts against the sidewall of the wafer 012 under the wafer pair 01, thereby achieving the positioning and clamping of the wafer pair 01.

[0103] It can be understood that for the circular wafer pair 01, the end surface of the clamping block 19a in contact with the wafer pair 01 during clamping can be a flat surface or an arc surface; if an arc surface is used, the arc surface needs to be adapted to the outer contour of the wafer pair 01. For the rectangular wafer pair 01, the end surface of the clamping block 19a in contact with the wafer pair 01 during clamping can be a flat surface or a 90° folded surface. For the clamping block 19a with a flat contact end surface, the number can be one pair and oppositely arranged on the opposite sides of the wafer pair 01; for the clamping block 19a with a flat contact end surface, the number can also be two pairs, respectively arranged on the four sides of the wafer pair 01. For the clamping block 19a with a folded contact end surface, the number can be one pair and arranged at two opposite corners of the wafer pair 01; for the clamping block 19a with a folded contact end surface, the number can be two pairs, respectively arranged at the four corners of the wafer pair 01. For the driving of the clamping block 19a, it can be driven manually and then fixed by fasteners; it can also be driven by an additional driving source 19b, which can adopt air pressure driving, hydraulic driving and motor driving, etc. Considering the fixation stability of the wafer pair 01, the preferred mode in this embodiment is to drive the clamping block 19a by the additional driving source 19b.

[0104] It should be noted that in order to avoid damage to the wafer pair 01 by the rigid structure, the clamping block 19a is made of flexible material as a whole, or as shown in Figure 6 In order to avoid the clamping force of the clamping block 19a on the wafer pair 01 being too large to cause damage to the wafer 012, a pressure sensor (not shown) can be provided on the clamping block 19a; the pressure sensor can be installed between the clamping block 19a and the driving end of the power source 19b, or the pressure sensor can be provided on the contact end surface of the clamping block 19a and the wafer pair 01. The pressure sensor can collect the clamping force of the clamping block 19a, so that the positioning and clamping of the wafer pair 01 can be controlled according to the collection data of the pressure sensor. The clamping block 19a needs to have a certain thickness, so the lower wafer 012 of the wafer pair 01 clamped by the clamping block 19a needs to have sufficient thickness, or the positioning and clamping mode by the clamping block 19a is suitable for the debonding of the wafer pair 01 with thicker wafer 012.

[0105] It should be noted that the above-mentioned positioning and clamping of the wafer pair 01 by negative pressure adsorption can be applied to portable scenarios and automated mass production scenarios; the mechanical clamping by the clamping block 19a is suitable for automated mass production scenarios. For the specific positioning and clamping method, those skilled in the art can select it according to the actual use scene. For the convenience of the subsequent description, the subsequent content will be described by taking the positioning and clamping of the wafer pair 01 by negative pressure adsorption as an example.

[0106] In some embodiments, for the scenario of debonding by manual method, if the wafer pair 01 is placed horizontally, it may not be convenient for manual operation. Then, as shown in Figures 3-4 The placement table 12 can be installed on the table 110 of the machine body 11 through the hinged seat 122 for damping rotation; or the side of the table 110 of the machine body 11 is provided with a rotating device, and the driving end of the rotating device is drivingly connected to the side of the placement table 12. Through the rotating installation of the placement table 12, the placement table 12 can be deflected up and down by any angle within 180° around the table 110 of the machine body 11. The specific structure and working principle of the rotating device are well known to those skilled in the art, and common rotating devices include motors, rotating cylinders and rotating hydraulic cylinders, etc. In the present embodiment, a motor is preferably used.

[0107] Specifically, when manually debonding, the height of the operator is often higher than the placement height of the machine body 11, which is not convenient for the operator to observe the adhesive layer 011 of the wafer pair 01. In order to facilitate the operator to manually debond, as shown in Figure 7 The placement table 12 can be rotated with the wafer pair 01 positioned and clamped by a certain angle, so that the adhesive layer 011 can correspond to the operator's line of sight. Generally, the placement table 12 can be rotated with the wafer pair 01 positioned and clamped by 30°-60° for manual debonding.

[0108] It should be noted that in the scenario that the wafer pair 01 on the placement table 12 is adsorbed by the adsorption device 19, the adsorption device 19 can be connected to the connection port 121 at the center of the placement table 12 through a soft air pipe. The air pipe needs to be reserved a certain length to ensure that the air pipe does not interfere with the rotation of the placement table 12 during the rotation of the placement table 12, and to ensure the continuous adsorption of the wafer pair 01 by negative pressure.

[0109] In some embodiments, the cutting line 200 is translated along the first direction parallel to the wafer pair 01 to achieve the debonding of the wafer pair 01.

[0110] In some embodiments, as shown in Figure 8As shown, the cutting line 200 is translated along a first direction X parallel to the wafer pair 01, while the cutting line 200 is reciprocatingly translated or unidirectionally translated along a second direction Y parallel to the wafer pair 01, so as to realize the debonding of the wafer pair 01; wherein the first direction X and the second direction Y are perpendicular to each other.

[0111] Specifically, based on the translation of the cutting line 200 along the first direction X and the reciprocating translation of the cutting line 200 along the second direction Y, the cutting line 200 can realize the debonding of the adhesive layer 011 of the wafer pair 01 by cutting the adhesive layer 011 in the form of a reciprocating saw. Of course, when the cutting line 200 moves along the second direction Y, it can also realize the debonding by unidirectional translation; this scenario is more suitable for scenarios where the cutting depth requirement is not high, or when subsequent heating-based line debonding is performed, the unidirectional movement of the cutting line 200 along the second direction Y can carry out the cut adhesive 0111, so as to appropriately avoid the re-healing of the cut adhesive 0111.

[0112] In some embodiments, as shown in FIG. 2B, the first end of the cutting line 200 is fixed, and the cutting line 200 rotates around the first end along a direction parallel to the wafer pair 01, so as to realize the debonding of the wafer pair 01. Figure 9

[0113] In some embodiments, as shown in FIG. 2C, the cutting line 200 and the wafer pair 01 can be relatively unidirectionally and continuously rotated around the geometric center of the wafer pair 01, and the distance between the cutting line 200 and the geometric center of the wafer pair 01 gradually decreases during the debonding, so as to realize the debonding of the wafer pair 01. Figure 10

[0114] It can be understood that when the cutting line 200 and the wafer pair 01 are debonded by relative unidirectional and continuous rotation, the specific rotation angle can be less than one turn or more than one turn. There are mainly two specific implementation processes for realizing the above-mentioned line debonding mode. Implementation mode one: the cutting line 200 only performs unidirectional translation towards the geometric center of the wafer pair 01 (the center of the circular wafer pair or the intersection point of the diagonal lines of the rectangular wafer pair), while the wafer pair 01 can be unidirectionally and continuously rotated around its own geometric center. Implementation mode two: the wafer pair 01 remains stationary, and the cutting line 200 performs a spiral trajectory motion around the geometric center of the wafer pair 01, and the specific spiral trajectory is similar to an Archimedes spiral. In order to facilitate understanding, the following will specifically describe the above-mentioned two implementation modes.

[0115] ​​One specific example, for the unidirectional translation of the cutting line 200 in the first embodiment, can refer to the aforementioned examples of the movement of the cutting line 200 in the first direction X, and specific details are not repeated. For the unidirectional continuous rotation of the wafer pair 01 around its own geometric center in the first embodiment, taking the circular placement table 12 as an example, the entire placement table 12 can be installed on the table surface 110 of the machine body 11 in a direction of rotation around its own axis, and then the placement table 12 is driven to rotate manually or through a rotary motor installed inside the machine body 11 and connected to the center of the placement table 12, so that the placement table 12 drives the fixed wafer pair 01 to rotate under the drive of the rotary motor. It can also be that the upper end surface of the placement table 12 is embedded with a rotating disc for placing the wafer pair 01, and the rotary motor installed on the back of the placement table 12 is connected to the rotating disc for driving, so that the rotating disc can drive the wafer pair 01 to rotate synchronously under the drive of the rotary motor. Among them, the former is suitable for the scene where the placement table 12 does not deflect up and down around the table surface 110, and the latter is suitable for any scene.

[0116] Another specific example, as shown in Figure 10 It is assumed that the cutting line 200 rotates one circle to complete the cutting of the adhesive layer 011. It is assumed that the initial position of the cutting line 200 for debonding is m1, and at this time the contact position of the cutting line 200 with the adhesive layer 011 is N1, that is, at this time the distance between the cutting line 200 and the geometric center O of the wafer pair 01 is the length of the line segment O-N1. After the cutting line 200 rotates 60° counterclockwise based on the spiral trajectory to reach the m2 position, the contact position of the cutting line 200 with the adhesive layer 011 is N2, that is, at this time the distance between the cutting line 200 and the geometric center O of the wafer pair 01 is the length of the line segment O-N2. After the cutting line 200 continues to rotate 60° counterclockwise based on the spiral trajectory to reach the m3 position, the contact position of the cutting line 200 with the adhesive layer 011 is N3, that is, at this time the distance between the cutting line 200 and the geometric center O of the wafer pair 01 is the length of the line segment O-N3. After the cutting line 200 continues to rotate 60° counterclockwise based on the spiral trajectory to reach the m4 position, the contact position of the cutting line 200 with the adhesive layer 011 is N4, that is, at this time the distance between the cutting line 200 and the geometric center O of the wafer pair 01 is the length of the line segment O-N4. After the cutting line 200 continues to rotate 60° counterclockwise based on the spiral trajectory to reach the m5 position, the contact position of the cutting line 200 with the adhesive layer 011 is N5, that is, at this time the distance between the cutting line 200 and the geometric center O of the wafer pair 01 is the length of the line segment O-N5. After the cutting line 200 continues to rotate 60° counterclockwise based on the spiral trajectory to reach the m6 position, the contact position of the cutting line 200 with the adhesive layer 011 is the geometric center of the wafer pair 01, that is, at this time the cutting line 200 has completed the cutting of the adhesive layer 011.

[0117] In some embodiments, such as Figure 11 As shown, the dicing line 200 and the wafer pair 01 can reciprocate at a set angle, and the distance between the dicing line 200 and the geometric center of the wafer pair 01 gradually changes during the debonding process, thereby realizing the debonding of the wafer pair 01.

[0118] It is understandable that there are two main implementation methods for the above-mentioned wire bonding method. Implementation Method 1: The dicing line 200 only performs unidirectional translation towards the geometric center of wafer pair 01 (the center of a circular wafer pair or the intersection of the diagonals of a rectangular wafer pair), while wafer pair 01 can reciprocate around its own geometric center. Implementation Method 2: Wafer pair 01 remains stationary, and the movement of the dicing line 200 can be decomposed into unidirectional translation and reciprocating rotation. For ease of understanding, the two implementation methods will be described in detail below. For the unidirectional translation of the dicing line 200 in Implementation Method 1, refer to the movement of the dicing line 200 in the first direction X in the aforementioned embodiment; the specific details will not be repeated. For the reciprocating rotation of wafer pair 01 around its own geometric center in Implementation Method 1, refer to the aforementioned unidirectional continuous rotation of wafer pair 01 around its own geometric center; simply adjust the unidirectional rotation mode of wafer pair 01 to a reciprocating rotation at a set angle. Implementation Method 2 will be explained in detail below with a specific example.

[0119] In a specific example, such as Figure 11 As shown, the dicing line 200 reciprocates within an angle range of α. The dicing line 200 can translate along a straight trajectory M passing through the geometric center O of wafer pair 01. Let the initial position of the dicing line 200 during debonding be m1, and the center point of the rotation of the dicing line 200 falling on the straight trajectory M. At this point, the contact position between the dicing line 200 and the adhesive layer 011 is located on the right side of the straight trajectory M. After rotating by an angle α, the contact position between the dicing line 200 and the adhesive layer 011 is located on the left side of the straight trajectory M, and the position of the dicing line 200 is m2. During this process, the dicing line 200 moves a predetermined distance along the straight trajectory M towards the geometric center of wafer pair 01. Subsequently, the cutting line 200 rotates to the right by an angle α and reaches position m3. As the cutting line 200 reciprocates by an angle α to the left and right and moves along the straight trajectory M, the cutting line 200 passes through positions m4, m5, m6, m7, m8, m9, m10, m11 and m12 in sequence and reaches m13. At this point, the cutting line 200 completely separates the adhesive layer to achieve the debonding and separation of wafer pairs 0 and 1.

[0120] It can be understood that the cutting line 200 can meet the actual needs of the present application through the above-mentioned five line un-bonding modes of one-way translation, reciprocating saw motion, rotation around a point, relative rotation with the wafer pair 01, and relative reciprocating rotation with the wafer pair 01. Specifically, one-way translation or reciprocating saw motion is preferably selected according to the actual needs of those skilled in the art.

[0121] It should be noted that in the above-mentioned five line un-bonding modes, it can be difficult to directly cut the adhesive layer 011 in the wafer pair 01 by the cutting line 200, and it is only suitable for wafer pairs 01 with low adhesive strength. Since a certain pressure needs to be applied when the wafer pair 01 is formed, which can cause part of the adhesive 0111 between the two wafers 012 to be extruded, thereby forming an arc-shaped protrusion at the edge of the adhesive layer 011. The size of the protrusion along the thickness direction of the adhesive layer 011 is generally greater than the internal size of the adhesive layer 011, which can cause the cutting line 200 to be easily directed to the side of the wafer 012 during cutting of the adhesive layer 011, thereby causing damage to the wafer 012. Therefore, in order to increase the application range of the above-mentioned five line un-bonding modes, the adhesive layer 011 can be pretreated, that is, the adhesive layer 011 can be softened or the edge can be removed to accelerate the line un-bonding process.

[0122] In some embodiments, a heating device (not shown) can be installed on the placement table 12 to heat the wafer pair 01 to above the glass transition temperature of the adhesive layer 011, that is, the adhesive layer 011 is in a softened state at this time, and then the translation of the cutting line 200 can realize the separation of the two wafers 012 in the wafer pair 01, that is, the un-bonding process.

[0123] Specifically, there are various ways to heat the wafer pair 01 by the heating device, for example, resistance wire heating, inductive heating, and infrared heating, etc. The specific installation method of the heating device needs to be set in combination with the specific heating method. For example, in the case of resistance wire heating, the heating device can be arranged in the groove 120, or arranged in the interior of the placement table 12, or arranged on the lower end surface of the placement table 12, that is, the end surface away from the groove 120. The specific installation method can be selected according to the actual needs of those skilled in the art.

[0124] It should be noted that the pre-treatment of the adhesive layer 011 is mainly to avoid the interference of the protrusion at the edge of the adhesive layer 011 to the cutting start of the cutting line 200. The softening of the adhesive layer 011 by heating is a better pre-treatment method; of course, the pre-treatment of the adhesive layer 011 can also be achieved by chemical etching in addition to heating by the heating device.

[0125] In some embodiments, as shown in Figure 2 and Figure 12 The wafer pair debonding device of the present application also includes a solvent spraying mechanism 4 for spraying a chemical solvent to the wafer pair 01 placed on the workbench 1 to be debonded; the chemical solvent is used to dissolve the adhesive layer 011 at the edge of the wafer pair 01, and the cutting line 200 can be cut along the dissolved position of the adhesive layer 011, thereby facilitating the subsequent line debonding process.

[0126] It should be noted that since the chemical solvent can only dissolve the outermost part of the adhesive layer 011, i.e. the inner part of the adhesive layer 011 is still in a solid and hard state, the debonding method of the cutting line 200 is preferably the reciprocating saw cutting form described above. In order to speed up the debonding process, the solvent spraying mechanism 4 always sprays the chemical solvent to the adhesive layer 011 of the wafer pair 01 during the entire debonding process of the cutting line 200.

[0127] In some embodiments, as shown in Figure 12 The solvent spraying mechanism 4 includes a nozzle 42, a liquid reservoir and a driving pump 41. The liquid reservoir is used to hold the chemical solvent, and the liquid reservoir is generally arranged in the machine body 11. The nozzle 42 is installed on the side of the table top 110 of the machine body 11 of the workbench 1 and faces the adhesive layer 011 of the wafer pair 01. The input and output ends of the driving pump 41 are connected to the liquid reservoir and the nozzle 42 through pipelines 40, respectively. The driving pump 41 is used to pump the chemical solvent in the liquid reservoir to the nozzle 42 for spraying, and the sprayed chemical solvent can dissolve and eliminate the edge of the adhesive layer 011, thereby forming a thinning area at the edge of the adhesive layer 011, and then during the subsequent line debonding, the cutting line 200 can debond the wafer pair 01 along the thinning area. At the same time, the thinning area can be continuously formed during the subsequent line debonding, thereby speeding up the entire debonding process.

[0128] It should be noted that when the nozzle 42 is arranged, in order to ensure the rapid debonding of the cutting line 200, the nozzle 42 needs to be on the same side as the cutting line 200, that is, the chemical solvent sprayed by the nozzle 42 is at the adhesion position of the adhesive layer 011, which is the cutting position of the cutting line 200. Of course, the chemical solvent can also be sprayed to other positions of the adhesive layer 011 to further accelerate the debonding process of the wafer pair 01. That is, the nozzle 42 can be arranged in multiple, and the multiple nozzles 42 are arranged at equal intervals along the circumferential direction of the wafer pair 01; wherein at least one nozzle 42 is on the same side as the initial position of the cutting line 200.

[0129] In one specific embodiment, as shown in Figure 12 , the number of nozzles 42 is two, and the two nozzles 42 are arranged in the first direction X of the movement of the cutting line 200. The two nozzles 42 can be connected in parallel to the output end of the drive pump 41 through the pipeline 40. The specific structure and working principle of the drive pump 41 are well known to those skilled in the art, and therefore will not be described in detail here. Common drive pumps 41 can use diaphragm pumps, plunger pumps, and gear pumps, etc.

[0130] It should be noted that the chemical solvent sprayed by the nozzle 42 will not all react with the adhesive layer 011, that is, after the chemical solvent sprayed by the nozzle 42 completes the dissolution of the edge of the adhesive layer 011, it will be partially left on the table 110. In order to avoid the flow of the residual chemical solvent, as shown in Figure 12 , a solvent collection groove 111 can be arranged on the side of the table 110 of the machine body 11; by arranging the solvent collection groove 111, a support area 112 for supporting the placement table 12 can be formed in the middle of the table 110 of the machine body 11. Thus, when performing line debonding based on chemical dissolution, the excess chemical solvent can flow from the placement table 12 through the support area 112 to the solvent collection groove 111.

[0131] In some embodiments, in order to recycle the chemical solvent; as shown in Figure 12 , the solvent collection groove 111 is in communication with the input end of the drive pump 41, so that the drive pump 41 can re-spray the chemical solvent collected in the solvent collection groove 111 to the edge of the adhesive layer 011 through the nozzle 42. In one specific embodiment, the solvent collection groove 111 can directly serve as a liquid reservoir for containing the chemical solvent. That is, when performing line debonding based on chemical dissolution, an appropriate amount of chemical solvent can be directly poured into the solvent collection groove 111, and then the chemical solvent in the solvent collection groove 111 can be sprayed out through the nozzle 42 by the drive pump 41, and the remaining chemical solvent after the solvent can be flowed back to the solvent collection groove 111 to form a cycle.

[0132] In some embodiments, as shown in Figure 12As shown, the solvent spraying mechanism 4 further comprises a solvent heater 43 for heating the unsprayed chemical solvent. By heating the chemical solvent, the dissolution process of the adhesive layer 011 can be accelerated, and the adhesive layer 011 can be appropriately heated and softened.

[0133] It can be understood that the solvent heater 43 can be arranged in various positions. For example, the solvent heater 43 can be arranged outside the pipeline 40 to heat the chemical solvent by heating the pipeline 40. Alternatively, the solvent heater 43 can be arranged in the pipeline 40, i.e. the chemical solvent flows into the solvent heater 43 in the pipeline 40 to complete the heating and then flows out. For the solvent heater 43 in this mode, it can be arranged at the input end of the driving pump 41 or at the output end of the driving pump 41, which can be selected by those skilled in the art according to actual needs. Alternatively, the solvent heater 43 can be arranged at the lower part of the solvent collecting groove 111, i.e. the chemical solvent in the solvent collecting groove 111 is directly heated by the solvent heater 43.

[0134] It should be understood that the solvent heater 43 can be heated in various ways, such as reverse application based on Peltier effect, resistance type semiconductor heating, ceramic semiconductor heating, etc. The specific implementation of the above heating methods is well known to those skilled in the art, and therefore will not be described in detail. The specific heating method of the solvent heater 43 can be selected by those skilled in the art according to actual needs.

[0135] Based on the foregoing technical solutions, the wafer debonding device of the present application can perform three debonding methods, i.e. a line debonding method based on heating, a line debonding method based on chemical dissolution, and a mechanical debonding method based on line cutting. For the convenience of understanding, the three debonding methods will be described in detail below.

[0136] I. For the line debonding method based on heating.

[0137] First, the wafer pair 01 to be debonded is placed in the positioning groove 123 of the placement table 12, and the suction device 19 is used to create a vacuum in the groove 120 to adsorb the wafer pair 01 to achieve positioning and clamping. Then, the wafer pair 01 is heated by the heating device to a temperature above the glass transition temperature of the adhesive layer 011, for example, to a temperature above 200°C. If a manual debonding method is used, the placement table 12 is adjusted to a set angle; if an automatic debonding method is used, the placement table 12 is placed flat. Finally, the cutting line 200 is tensioned on the winding support 3, and the winding support 3 drives the cutting line 200 to cut the adhesive layer 011 in a direction parallel to the wafer pair 01, thereby separating the two wafers 012 of the wafer pair 01 to achieve debonding.

[0138] II. Chemical dissolution-based wire debonding method

[0139] First, the wafer pair 01 to be debonded is placed in the positioning groove 123 of the placement table 12, and the suction device 19 is used to create a vacuum in the groove 120 to adsorb the wafer pair 01 to achieve positioning and clamping. This debonding method is generally performed at room temperature, and if heating is required, the wafer pair 01 can be heated to the appropriate temperature by the heating device. If a manual debonding method is used, the placement table 12 is adjusted to a set angle; if an automatic debonding method is used, the placement table 12 is placed flat. Then, the chemical solvent is continuously sprayed through the nozzle 42 to the edge of the adhesive layer 011 of the wafer pair 01 at an appropriate speed by driving the pump 41. Finally, the cutting line 200 is tensioned on the winding support 3, and the winding support 3 drives the cutting line 200 to cut the area of the adhesive layer 011 soaked in the chemical solvent in a direction parallel to the wafer pair 01, thereby separating the two wafers 012 of the wafer pair 01 to achieve debonding. It should be noted that the wafer pair 01 can also be pre-soaked in the chemical solvent to dissolve and eliminate the edge of the adhesive layer 011 before being placed between the placement tables 12, which is more conducive to the subsequent wire debonding process.

[0140] III. Mechanical debonding method based on wire cutting

[0141] The wafer pair 01 to be debonded is first placed in the positioning groove 123 of the placement table 12, and the groove 120 is vacuumized by the suction device 19 to form negative pressure to adsorb the wafer pair 01 to realize positioning and clamping. This debonding method can be carried out at room temperature or under low temperature conditions; if cooling is required, a cooling device 13 can be provided on the workbench 1 to cool the wafer pair 01. If a manual debonding method is used, the placement table 12 is adjusted to a set angle; if an automatic debonding method is used, the placement table 12 is placed flat. Finally, the cutting line 200 is tensioned on the winding support 3, and the cutting line 200 is driven by the winding support 3 to cut the adhesive layer 011 in a direction parallel to the wafer pair 01, thereby separating the two wafers 012 of the wafer pair 01 to realize debonding. It should be noted that, in order to speed up the debonding process, the wafer pair 01 can be pre-soaked by chemical solvent to dissolve and eliminate the edges of the adhesive layer 011 to form a thinning area before being placed between the placement tables 12, and then the cutting line 200 is cut along the thinning area to realize mechanical separation of the wafer pair 01; specifically, the cutting line 200 will cut along the wafer surface with the lowest adhesion of the adhesive 0111, or at the release layer surface of the adhesive 0111 to complete the debonding.

[0142] It can be understood that in the mechanical debonding method based on wire cutting, the cooling device 13 can be installed in multiple positions, such as being installed on the machine body 11 or the placement table 12. The specific cooling method of the cooling device 13 can be various, such as forced air cooling, liquid cooling, dry ice cooling, gas cooling, and RTA type rapid cooling. For the convenience of understanding, the following will take forced air cooling as an example for detailed description.

[0143] One specific embodiment, as shown in FIGS. 2 and Figure 3 The machine body 11 includes a table top 110 and a control part, and the control part near the side of the table top 110 can form a vertical surface 116 perpendicular to the table top 110, and the vertical surface 116 is provided with an air outlet 117, the height of the air outlet 117 is matched with the height of the adhesive layer 011 of the wafer pair 01; the cooling device 13 preferably adopts air cooling, that is, the cooling device 13 adopts a cooling fan. The air duct of the cooling device 13 is preferably perpendicular to the first direction X of the cutting line 200.

[0144] It should be understood that the above three disbonding methods based on the cutting line 200 can be used in combination in actual applications; for example, a concave thinning area can be formed at the edge of the adhesive layer 011 of the wafer pair 01 by physical contact of the cutting line 200 through the heating-based wire disbonding method; then the wafer pair 01 is rapidly cooled to room temperature by the cooling device 13, and then the disbonding of the wafer pair 01 is completed by cutting along the wafer surface with the lowest adhesive force of the adhesive 0111 or at the release layer surface of the adhesive 0111 through the mechanical disbonding method based on the wire cutting. The wafer pair disbonding device of the present application can simultaneously realize the functions of the above three disbonding methods based on the cutting line 200, or only one or two disbonding methods, in which case only the components corresponding to the unused wire disbonding method need to be omitted, i.e. only the components required for the actual application of the disbonding method based on the cutting line 200 need to be prepared during production.

[0145] In some embodiments, the material of the cutting line 200 is a combination of one or more of synthetic or natural polymer materials, metal materials, ceramic or inorganic materials, and composite materials. Specifically, the cutting line 200 can be made of single or multi-filament or multifilament fibers of synthetic polymers, natural polymers, metals, ceramics, composites, natural or synthetic polymers; or various combinations of single, multi-filament and multifilament fibers.

[0146] It should be understood that there are various combinations of the materials mentioned above. For ease of understanding, specific examples will be provided below for detailed explanation. In one example, the cutting wire 200 can be made of high-temperature resistant polymers such as: polyamide (nylon), fluorinated polymers such as polytetrafluoroethylene (Teflon, PTFE), polyimide (PI), polyetheretherketone (PEEK), aramid fibers (aramid 1414: Kevlar, Twaron, Taparan; aramid 1313: Nomex, Conex, Tametatar; aramid III: Armo; Teconora; Technora, etc.), polysulfone (PES, PPSU, PSU), polyetherimide (Ultem), polybenzimidazole (Celazole), and poly(p-phenylenebenzodioxazole) (Zylon). In another example, the cutting wire 200 can be made of high-temperature resistant SiCN, SiC, and C fibers. In one example, the cutting wire 200 can be made of other polymers such as polypropylene, polyethylene (including ultra-high molecular weight polyethylene), polyester, natural polymers (silk, etc.). In another example, the cutting wire 200 can also be made of monomers or combinations of copper, gold, silver, stainless steel, tungsten, molybdenum, metal alloys, etc.; a polymer can also be coated onto a metallic cutting wire 200 for cutting. In one example, the cutting wire 200 can also be lubricated or self-lubricating; the cutting wire 200 can be made of fluorinated materials, silicone, and polyolefins, etc.

[0147] In some embodiments, such as Figure 13 As shown, the cutting line 200 adopts one of the following structures: a sheet-like structure, a saw-like structure, or a linear structure. Specifically, for the linear structure cutting line 200, as shown... Figure 13 As shown in (a1), (a2), and (a3), the cross-sectional shape of the cutting line 200 can be one of a circle, an ellipse, and a triangle; of course, its cross-sectional shape can also be one of a rectangle or other polygons. For the cutting line 200 of the sheet-like structure, as... Figure 13 As shown in (b1), (b2), and (b3), the cross-sectional shape of the cutting line 200 can be rectangular or a combination of multiple circles and multiple rhombuses, that is, the contours at both ends of the cross-section of the cutting line 200 are straight, arc-shaped, or V-shaped. For the sawtooth structure cutting line 200, as shown in... Figure 13 As shown in (c), the cutting line 200 is generally sheet-shaped, and the side of the cutting line 200 that is used to contact the adhesive layer 011 has a uniformly distributed toothed structure along its length.

[0148] It should be understood that the saw-shaped cutting line 200 is generally a rigid structure; the linear cutting line 200 is generally a flexible structure; and the sheet-shaped cutting line 200 can be either a rigid or flexible structure. The specific shape of the cutting line 200 can be selected according to the actual needs of those skilled in the art. In this embodiment, a flexible linear or sheet-shaped structure is preferred for the cutting line 200. Specifically, the linear cutting line 200 can be obtained by winding a single filament or multiple filaments; the sheet-shaped cutting line 200 can be obtained by arranging multiple filaments into a single layer or multiple layers, or by winding multiple filaments and then flattening them.

[0149] In some embodiments, the thickness of the cutting line 200 is less than 10 times the thickness of the adhesive layer 011. Specifically, the thickness of the cutting line 200 can be less than or equal to the thickness of the adhesive layer 011, or it can be greater than the thickness of the adhesive layer 011; if the thickness of the cutting line 200 is greater than the thickness of the adhesive layer 011, then the thickness of the cutting line 200 should not exceed 10 times the thickness of the adhesive layer 011.

[0150] It is understandable that for a dicing line 200 with a thickness less than or equal to the adhesive layer 011, it can completely cut through the adhesive layer 011, meaning that a dicing line 200 of this thickness can be used for the three debonding methods mentioned above. For a dicing line 200 with a thickness greater than the adhesive layer 011, it cannot completely pass through the adhesive layer 011 and is generally used for mechanical debonding based on wire cutting; that is, the two wafers 012 of wafer pair 01 are separated by the squeezing and shearing forces generated by the dicing line 200 during the cutting process.

[0151] It should be noted that, based on its inherent physical properties, the flexible cutting wire 200 possesses the ability to undergo mechanical deformation, and its thickness may change before and after cutting. For example, the multi-filament cutting wire 200 is a linear structure with a circular cross-section before cutting. During the cutting process, due to tension and compression, the cutting wire 200 can flatten into a sheet-like structure, which reduces the thickness of the cutting wire 200 during the cutting process compared to before cutting.

[0152] In some embodiments, such as Figure 14 As shown in (a), there is one winding support 3, which can be in the shape of an arc, a U, or a "U". The cutting wire 200 can be tensioned at both ends of the winding support 3. Thus, when debonding wafer pair 01, the winding support 3 can be moved parallel to wafer pair 01 by hand or power source to achieve wire debonding.

[0153] In some embodiments, such as Figure 14(b) As shown, the number of winding supports 3 is set to a pair, and the cutting line 200 is tensioned between the two winding supports 3. Thus, when the wafer pair 01 is being debonded, the winding support 3 can be driven by hand or a power source to move along a direction parallel to the wafer pair 01 to achieve line debonding.

[0154] It can be understood that the winding support 3 is used to tension the cutting line 200 and serve as a carrier when the cutting line 200 moves. Both of the above-mentioned two use modes of the winding support 3 can meet the needs of the present application. Considering that the cutting line 200 needs to be kept stable during movement, the present application preferably adopts double winding supports 3 as carriers for tensioning and moving the cutting line 200.

[0155] One specific embodiment is shown in Figure 15 As shown, the winding support 3 includes a frame body 31 and a winding roller 32. If the placement table 12 is only used for automatic driving of line debonding, as shown in Figure 3 As shown, the surface 110 of the machine body 11 is provided with parallel sliding grooves 114 on both sides, and the frame body 31 can be slidingly installed in the corresponding sliding groove 114. If the placement table 12 can be used for manual driving of line debonding, the frame body 31 can be slidingly installed in the placement table 12, so that the winding support 3 can drive the cutting line 200 to rotate synchronously with the placement table 12, thereby ensuring that the movement path of the cutting line 200 is always parallel to the wafer pair 01 on the placement table 12. The winding roller 32 is rotatably installed at the upper end of the frame body 31, and the two ends of the cutting line 200 are respectively wound around the winding rollers 32 of the two winding supports 3, thereby tensioning the cutting line 200 by the two winding rollers 32.

[0156] It should be noted that the tensioning of the cutting line 200 can be achieved by manual adjustment or automatic adjustment. There are many ways to manually adjust and automatically adjust the tensioning of the cutting line 200. For the convenience of understanding, some specific embodiments will be described in detail below.

[0157] In some embodiments, the two ends of the cutting line 200 can be wound around the winding rollers 32 of the two winding supports 3 respectively, at which time the cutting line 200 is in a relaxed state. Then one winding roller 32 can be fixed by a fastener, and the other winding roller 32 can be manually rotated to tension the cutting line 200. After the tensioning of the cutting line 200 is completed, the other winding roller 32 can also be fixed by a fastener. Alternatively, the two winding rollers 32 can be simultaneously manually driven to rotate in opposite directions to tension the cutting line 200, and then the two winding rollers 32 can be simultaneously fixed by fasteners.

[0158] It should be noted that for the cutting line 200 of the sheet type structure, in order to ensure the stability of the cutting of the cutting line 200 to the adhesive layer 011, it is necessary to ensure that the flat extension direction of the cutting line 200 is parallel to the wafer pair 01. When winding the cutting line 200, the cutting line 200 is mainly flatly wound on the winding roller 32, which may cause the cutting line 200 to be difficult to maintain a posture parallel to the wafer pair 01 after extending out of the winding roller 32; therefore, a guide structure needs to be provided to guide the part of the cutting line 200 used for cutting to ensure that it can be kept horizontal to the wafer pair 01.

[0159] In some embodiments, as shown in Figure 16 and Figure 17 The winding support 3 also includes a guide frame 311 fixedly arranged at the upper end of the frame body 31 and located on the wire outlet side of the winding roller 32. The guide frame 311 has a guide opening 3110 horizontally arranged thereon for the cutting line 200 to pass through, so that the cutting line 200 of the sheet type structure can be kept parallel to the wafer pair 01 during the debonding process.

[0160] It should be noted that the width of the guide opening 3110, i.e. the height perpendicular to the extension direction, can be equal to the thickness of the cutting line 200; considering that the cutting line 200 is made of flexible material and has a certain deformation ability, i.e. the cutting line 200 can be appropriately extruded and flattened, therefore the width of the guide opening 311 can also be less than the thickness of the cutting line 200. Considering that the thickness of the cutting line 200 made of multi-wire fiber can be reduced to about 10% of the natural state when flattened, the width of the guide opening 311 in this embodiment can be set to 10% to 100% of the thickness of the cutting line 200. The extension length of the guide opening 3110 is greater than or equal to the width of the cutting line 200, i.e. the narrower the width of the guide opening 3110 is set, the longer the extension length needs to be set, and vice versa; however, the change between the two is not necessarily linear. Specifically, for the cutting line 200 with a multi-wire structure, the density of the cutting line 200 will be higher when flattened, i.e. the cross-sectional area after flattening will be reduced, or the flattened cutting line 200 is more compact.

[0161] In some embodiments, as shown in Figure 16 A first rotary driver 33 can be mounted on the frame body 31 of at least one winding support 3, and the output end of the first rotary driver 33 is connected with the winding roller 32, so that the winding roller 32 and the first rotary driver 33 cooperatively form an automatic winding device. The two ends of the cutting line 200 are respectively wound on the corresponding winding rollers 32 of the two winding supports 3; and the automatic winding device winds the cutting line 200 by rotating to tension the cutting line 200.

[0162] It can be understood that, for the scenario that only one winding support 3 is provided with the first rotary driver 33, after the completion of the winding of the two ends of the cutting wire 200, the cutting wire 200 is in a relaxed state; at this time, the winding roller 32 on the winding support 3 which is not provided with the first rotary driver 33 can be fixed, and then the corresponding winding roller 32 is driven to rotate by driving the first rotary driver 33 to tighten the cutting wire 200. For the scenario that both winding supports 3 are provided with the first rotary driver 33, after the completion of the winding of the two ends of the cutting wire 200, the cutting wire 200 is in a relaxed state; at this time, only the corresponding winding roller 32 is controlled to rotate in the opposite direction by the two first rotary drivers 33 to respectively wind the two ends of the cutting wire 200 to realize tensioning.

[0163] It should be noted that, when the cutting wire 200 is tensioned, the tension of the cutting wire 200 that is too small can cause the de-bonding to be unable to proceed smoothly, and the tension of the cutting wire 200 that is too large can cause the cutting wire 200 to break in the process of de-bonding; therefore, when the cutting wire 200 is tensioned, it is necessary to ensure that the tension of the cutting wire 200 is within a suitable range.

[0164] In order to ensure that the tension of the cutting wire 200 is suitable, in some embodiments, a pressure sensor (not shown) can be installed on the winding support 3, and the pressure sensor is used to identify the tension of the cutting wire 200. The specific installation position of the pressure sensor is multiple, which can be installed between the output end of the first rotary driver 33 and the winding roller 32, or directly installed on the side wall of the winding roller 32, that is, the cutting wire 200 is directly wound and connected with the pressure sensor.

[0165] It should be noted that, from the foregoing, it can be known that the translational de-bonding mode of the cutting wire 200 mainly includes unidirectional translation and reciprocating saw motion; for unidirectional translation, it is only necessary to ensure that the cutting wire 200 is tensioned and then the winding support 3 is driven to translate in the first direction X; and for the reciprocating saw motion mode of the cutting wire 200, when the winding support 3 drives the cutting wire 200 to translate in the first direction X, the reciprocating movement of the cutting wire 200 in the second direction Y can be realized by the automatic winding device. In order to facilitate understanding, the reciprocating movement of the cutting wire 200 in the second direction Y realized by the automatic winding device will be described in detail below.

[0166] In some embodiments, as shown in FIG. 6, the automatic winding device can include a second rotary driver 34 and a winding roller 32 driven by the second rotary driver 34. Figure 16(a) shown, one winding support 3 is provided with a first rotary driver 33 and connected with a winding roller 32 to form an automatic winding device; the winding roller 32 on the other winding support 3 is elastically rotatably mounted on the frame 31 through a first elastic member (not shown); the specific type of the first elastic member is various, which can be a torsion spring or a spring sheet, and the specific type can be selected by the person skilled in the art according to the actual needs, and the first elastic member is preferably a torsion spring in the embodiment. The two ends of the cutting wire 200 are wound on the electric collection device and the winding roller 32, respectively; the automatic winding device drives the cutting wire 200 to reciprocate by reciprocating rotation.

[0167] It should be known that the specific structure and working principle of the first rotary driver 33 are known to the person skilled in the art, and the common first rotary driver 33 includes a motor, a rotary cylinder and a rotary hydraulic cylinder, etc., and the motor is preferably used in the embodiment.

[0168] It should be noted that in order to ensure that the tension of the cutting wire 200 is appropriate, the elastic force range of the torsion spring as the first elastic member needs to be within the tension range of the cutting wire 200. Specifically, assuming that the tension range of the cutting wire 200 is [F1, F2]; then when the cutting wire 200 is tensioned, the automatic winding device can drive the corresponding winding roller 32 to rotate through the first rotary driver 33. In the initial driving stage of the first rotary driver 33, the winding roller 32 connected with the torsion spring can tend to be stationary under the elastic force of the torsion spring, and then the cutting wire 200 can be gradually tensioned. When the tension of the cutting wire 200 reaches F1, the position of the winding roller 32 connected with the torsion spring can be recorded as A; then as the first rotary driver 33 continues to rotate, the winding roller 32 connected with the torsion spring will rotate under the traction of the cutting wire 200 until the tension of the cutting wire 200 reaches F2, and the position of the winding roller 32 connected with the torsion spring can be recorded as B. Then the winding roller 32 connected with the torsion spring is driven to reciprocate between positions A and B through the reciprocating rotation of the first rotary driver 33, so that the cutting wire 200 can be reciprocated in the second direction Y while meeting the tension requirement. Alternatively, the winding roller 32 connected with the torsion spring is driven to rotate in one direction between positions A and B through the one-way rotation of the first rotary driver 33, so that the cutting wire 200 can be translated in one direction in the second direction Y while meeting the tension requirement.

[0169] In some embodiments, as Figure 16(b) As shown, the two wire winding supports 3 are both provided with automatic winding devices, and the two ends of the cutting wire 200 are wound on the winding rollers 32 of the two automatic winding devices. When tensioning the cutting wire 200, one of the first rotary drivers 33 of the automatic winding devices can be controlled to be stationary, and the first rotary driver 33 of the other automatic winding device can be controlled to rotate, so as to realize the tensioning of the cutting wire 200; or the first rotary drivers 33 of the two automatic winding devices can be controlled to rotate reversely to realize the tensioning of the cutting wire 200. After the tensioning of the cutting wire 200 is completed, the first rotary drivers 33 of the two automatic winding devices can be controlled to rotate synchronously in the same direction, so as to drive the cutting wire 200 to move reciprocatingly along the second direction Y. Alternatively, after the tensioning of the cutting wire 200 is completed, the first rotary drivers 33 of the two automatic winding devices can be controlled to rotate synchronously in the same direction, so as to drive the cutting wire 200 to move unidirectionally along the second direction Y.

[0170] In some embodiments, as shown in FIG. 1, Figure 18 As shown, the wafer debonding device of the present application further comprises a displacement mechanism 34 mounted on the workbench 1, the displacement mechanism 34 is connected with the wire winding support 3, and the displacement mechanism 34 is used to drive the wire winding support 3 to move. That is, the displacement mechanism 34 can drive the wire winding support 3 to move under the drive of an additional power source to drive the cutting wire 200 to be debonded.

[0171] It can be understood that the displacement mechanism 34 can drive both wire winding supports 3 to move, or the two wire winding supports 3 can be respectively mounted on corresponding displacement mechanisms 34, and the two displacement mechanisms 34 drive the cutting wire 200 to move through synchronous movement. In order to ensure the stable movement of the cutting wire 200, two displacement mechanisms 34 are preferably used to drive the two wire winding supports 3 synchronously in the embodiment. The displacement mechanism 34 can drive the wire winding support 3 in various ways, such as pneumatic drive, hydraulic drive, or linear motor drive. Considering that pneumatic drive and hydraulic drive need to be equipped with additional air source and hydraulic source, the displacement mechanism 34 is preferably driven by linear motor in the embodiment.

[0172] In a specific embodiment, as shown in FIG. 1, Figure 18As shown, the displacement mechanism 34 comprises a second rotary driver 341, a screw rod 342, a sliding block 343, and a mounting base 344. The mounting base 344 can be fixedly installed inside the machine body 11 to provide a mounting structure for the entire displacement mechanism 34. The second rotary driver 341 is detachably fixedly installed at one end of the mounting base 344, the screw rod 342 is rotationally installed along the extension direction of the mounting base 344, and one end of the screw rod 342 is drivingly connected to one end of the second rotary driver 341, so that the screw rod 342 can rotate under the driving of the second rotary driver 341. The sliding block 343 is cooperatively installed on the screw rod 342, and the upper end surface of the sliding block 343 can be detachably fixedly connected to the frame body 31 of the wire winding support 3, while the lower end surface of the sliding block 343 can be guidingly cooperated with the mounting base 344, i.e., the mounting base 344 can limit the rotation of the sliding block 343 around the screw rod 342, so that when the screw rod 342 rotates, the sliding block 343 can drive the wire winding support 3 to move along the axial direction of the screw rod 342.

[0173] It can be understood that the displacement mechanism 34 can drive the wire winding support 3 to realize the translation of the cutting wire 200 along the first direction X; then in the case that the wire winding support 3 is not equipped with an automatic winding device, or the equipped automatic winding device is only used for tensioning the cutting wire 200, the displacement mechanism 34 can also drive the cutting wire 200 to reciprocatingly translate along the second direction Y while driving the cutting wire 200 to translate along the first direction X.

[0174] In some embodiments, as shown in Figure 19 The displacement mechanism 34 comprises a first displacement device 34a and a second displacement device 34b which are drivingly connected, and the driving directions of the first displacement device 34a and the second displacement device 34b are perpendicular. The first displacement device 34a drives the wire winding support 3 to drive the cutting wire 200 to translate along the first direction, and the second displacement device 34b drives the wire winding support 3 to drive the cutting wire 200 to reciprocatingly translate along the second direction.

[0175] It can be understood that the specific driving modes of the first displacement device 34a and the second displacement device 34b are preferably linear motor driving modes, and the specific structures of the first displacement device 34a and the second displacement device 34b can refer to the foregoing content. The second displacement device 34b is located above the first displacement device 34a; the second displacement device 34b is installed on the sliding block 343 of the first displacement device 34a through the mounting base 344, and the wire winding support 3 is installed on the sliding block 343 of the second displacement device 34b through the frame body 31.

[0176] In some embodiments, as shown in Figure 2As shown, the wafer pair debonding device of the present application further comprises a grabbing mechanism 5 mounted on the workbench 1. The grabbing mechanism 5 grabs the wafer 012 on the upper layer of the wafer pair 01 through the grabbing end, and can drive the grabbed wafer 012 to move parallel to the wafer pair 01 or rotate, so as to separate the two wafers 012 after debonding.

[0177] It should be understood that, since the surface of the wafer 012 is a high-precision machined surface, in order to avoid scratches or contamination of the surface of the wafer 012 after the debonding of the wafer pair 01, a special grabbing mechanism 5 is needed to take it. Generally, there are various grabbing methods for taking the wafer 012, including negative pressure adsorption, negative pressure suction and force-controlled clamping; considering the limited installation space of the workbench 1, the negative pressure adsorption method is preferred in the embodiment.

[0178] It should be understood that, by providing the grabbing mechanism 5, the wafer pair debonding device of the present application can also be used for thermal slip debonding; specifically, when debonding, the wafer pair 01 fixed on the placement table 12 is heated by the heating device to above the glass transition temperature of the adhesive layer 011, and then the adhesive layer 011 of the wafer pair 01 is further cut by the cutting line 200; when the cutting line 200 partially cuts the adhesive layer 011, such as when the cutting depth reaches 50% to 80% of the diameter of the wafer pair 01, the grabbing mechanism 5 can be used to adsorb the wafer 012 on the upper layer of the wafer pair 01 and apply a pulling force, so as to pull off or slip off the remaining adhesive layer 011 of the wafer pair 01 to achieve the debonding of the wafer pair 01. This method is faster than the linear debonding method based on heating.

[0179] Meanwhile, during the online debonding process, the grabbing mechanism 5 can also keep grabbing the wafer 012 on the upper layer of the wafer pair 01 to improve the structural stability of the wafer pair 01 during the online debonding process, especially in the later stage of the online debonding process, since the adhesive layer 011 is mostly eliminated, the wafer 012 on the upper layer of the wafer pair 01 may be tilted downward under the action of gravity, causing the wafer 012 to contact the cutting line 200 and causing surface damage. Therefore, during the online debonding process, the wafer 012 on the upper layer of the wafer pair 01 can be grabbed by the grabbing mechanism 5, and the wafer 012 on the lower layer of the wafer pair 01 can be negatively adsorbed by the adsorption device 19.

[0180] In some embodiments, as Figure 20As shown, the grabbing mechanism 5 comprises a suction assembly 52 and a driving arm 51. The driving arm 51 is movably mounted on the side of the workbench 1, and the suction assembly 52 is mounted on the driving arm 51. The suction assembly 52 is used to perform negative pressure suction on the wafer 012 located on the upper layer of the wafer pair 01, and the driving arm 51 is used to drive the suction assembly 52 to move together with the wafer 012 being sucked.

[0181] It can be understood that, in a portable scenario, the driving arm 51 generally adopts a straight arm structure; and in an automated batch production scenario, the driving arm 51 can adopt a straight arm structure or a mechanical hand. In the embodiment, the straight arm structure is preferably adopted. In a portable scenario, the driving arm 51 drives the suction assembly 52 to move in two ways, i.e., a manual driving way and a power source driving way. The manual driving way is only suitable for a portable scenario, and the power source driving way is suitable for both a portable scenario and an automated batch production scenario. For the convenience of understanding, the two ways of driving the driving arm 51 will be described in detail below.

[0182] In a specific embodiment, if the placing table 12 is only used for automatic driving of wire debonding, as shown in Figure 3 , the side of the table top 110 of the machine body 11 is provided with a mounting groove 115. As shown in Figure 20 , the driving arm 51 comprises a connecting arm 511, which is arranged parallel to the wafer pair 01. The connecting arm 511 is provided with a rotation shaft 512 perpendicular to the extending direction at a first end, and is rotatably mounted on the mounting groove 115 through the rotation shaft 512. The suction assembly 52 is mounted on a second end of the connecting arm 511. The connecting arm 511 can drive the suction assembly 52 to move together with the wafer 012 being sucked by rotating around the mounting groove 115 through the rotation shaft 512 under manual driving. If the placing table 12 can be used for manual driving of wire debonding, the connecting arm 511 can be rotatably mounted on the placing table 12 through the rotation shaft 512 at the first end, so that the connecting arm 511 can still drive the suction assembly 52 to suck the wafer 012 on the upper layer of the wafer pair 01 after the placing table 12 rotates a certain angle relative to the table top 110.

[0183] In a specific embodiment, as shown in Figure 23 , based on the structure of the foregoing driving arm 51 performing manual driving, the driving arm 51 further comprises a third rotary driver 513, which can be fixedly arranged and connected with the rotation shaft 512 through an output end, or directly connected with the first end of the connecting arm 511 through an output end. After the debonding is completed, the third rotary driver 513 can drive the connecting arm 511 to move together with the suction assembly 52 and the wafer 012 being sucked.

[0184] It should be known that the specific structure and working principle of the third rotary driver 513 are known to those skilled in the art, and common third rotary drivers 513 include motors, rotary cylinders, and rotary hydraulic cylinders, etc. In the embodiment, a motor is preferably used for the third rotary driver 513.

[0185] It should be known that the adsorption position of the adsorption assembly 52 to the wafer pair 01 is generally for the wafer pair 01. In order to avoid interference caused by the placing process of the adsorption assembly 52 to the wafer pair 01, the adsorption assembly 52 needs to be moved to one side of the placing table 12 through the connecting arm 511 before the wafer pair 01 is placed. After the wafer pair 01 is placed, the adsorption assembly 52 is moved to the position corresponding to the wafer pair 01 through the connecting arm 511. In order to ensure the smooth movement of the adsorption assembly 52, the adsorption assembly 52 is generally higher than the upper end surface of the wafer pair 01, and the specific interval distance D can be selected by those skilled in the art according to actual needs, for example, the interval distance D can be 3mm or 5mm, etc. Figure 21

[0186] After the adsorption assembly 52 reaches the predetermined position, as shown in Figure 21 (b), the adsorption assembly 52 needs to be at least moved downward to fit the upper end surface of the wafer pair 01, and then the upper wafer 012 of the wafer pair 01 is adsorbed by the negative pressure adsorption mode, thereby assisting the wire debonding process. After the wire debonding is completed, as shown in Figure 22 , the connecting arm 511 can drive the adsorption assembly 52 to move to the side of the placing table 12, and then the adsorption assembly 52 can drive the adsorbed wafer 012 to move synchronously, so that the two wafers 012 in the debonding state are separated from each other.

[0187] From the above working process of the adsorption assembly 52, in order to ensure that the adsorption assembly 52 can smoothly adsorb the wafer 012, the adsorption end of the adsorption assembly 52 needs to be able to move along the axial direction of the wafer pair 012. The moving mode of the adsorption end of the adsorption assembly 52 includes a manual driving mode and a power source driving mode. The manual driving mode is only suitable for portable scenarios, and the power source driving mode is suitable for portable scenarios and automatic batch production scenarios. In order to facilitate understanding, the manual driving mode and the power source driving mode of the adsorption end of the adsorption assembly 52 will be described in detail below.

[0188] In a specific embodiment, as shown in Figure 20 ​As shown, the adsorption assembly 52 includes a suction cup 521 and a second elastic member. The suction cup 521 is installed on the second end of the driving arm 51 through a guide rod 522, and the guide rod 522 and the driving arm 51 are connected through the second elastic member. The second elastic member can be a spring 523 or a spring sheet, and the spring 523 is preferred in this embodiment. When the adsorption assembly 52 is adsorbed to the wafer pair 01, the adsorption assembly 52 can be moved above the center of the wafer pair 01, and then the suction cup 521 is driven to move downward to contact the wafer 012 on the upper layer of the wafer pair 01 by manually pressing the guide rod 522, so that the wafer 012 on the upper layer of the wafer pair 01 is adsorbed by the suction cup 521 as the adsorption end.

[0189] In a specific embodiment, as shown, Figure 23 As shown, the adsorption assembly 52 includes a suction cup 521 and a telescopic driver 524. The telescopic driver 524 is fixedly installed on the second end of the driving arm 51 through a mounting bracket 525, and the suction cup 521 is installed on the driving end of the telescopic driver 524 in the axial direction of the wafer pair 01. The telescopic driver 524 can be driven in various ways, such as pneumatic driving, hydraulic driving, and motor driving, and the pneumatic driving is preferred in this embodiment. When the adsorption assembly 52 is adsorbed to the wafer pair 01, the suction cup 521 as the adsorption end can be moved to approach the upper end face of the wafer pair 01 under the driving of the telescopic driver 524, until the suction cup 521 contacts the wafer 012 on the upper layer of the wafer pair 01 and is adsorbed. It should be noted that when the suction cup 521 is moved by the telescopic driver 524, in order to avoid that the wafer pair 01 is damaged due to the excessive pressure applied by the suction cup 521, a pressure sensor is installed between the suction cup 521 and the driving end of the telescopic driver 524, so that the pressure applied by the suction cup 521 to the wafer pair 01 is identified and feedback control is performed.

[0190] It can be understood that in the above two specific embodiments, the specific number of the suction cup 521 can be selected according to the structure of the wafer 012 in the wafer pair 01. Specifically, the device wafer 0122 in the wafer pair 01 can be a whole structure, such as a board-level packaging application scenario, or a spliced and combined structure, such as a fan-out wafer-level packaging application scenario. The device wafer 0122 with the whole structure has a relatively high structural stiffness, while the device wafer 0122 with the spliced and combined structure is mainly bonded by a molding material, which results in a weak structural stiffness and a flexible bending in the process of grabbing.

[0191] Therefore, when the wafer pair 01 is grabbed during the unbonding process, it is assumed that the device wafer 0122 is sucked by the suction cup 521 as the upper wafer of the wafer pair 01. For the device wafer 0122 with an integrated structure, the number of corresponding suction cups 521 can be one as shown in FIG. 8A, or multiple as shown in FIG. 8B, and the specific number can be determined according to the size of the suction cup 521 and the structure of the device wafer 0122. The multiple suction cups 521 can be arranged uniformly along the circumferential direction of the wafer pair 01, so that the wafer pair 01 can be subjected to a more uniform grabbing force. For the device wafer 0122 with a spliced and combined structure, the number of corresponding suction cups 521 is multiple as shown in FIG. 8C, and the specific number can be determined according to the size of the suction cup 521 and the structure of the device wafer 0122. The multiple suction cups 521 can be arranged uniformly along the circumferential direction of the wafer pair 01, so that the wafer pair 01 can be subjected to a more uniform grabbing force, thereby ensuring that the flexible device wafer 0122 can be stably grabbed. For the suction cup 521 with a number of one, it can be directly installed on the driving arm 51. For the suction cup 521 with a number of multiple, there are multiple installation methods, which will be described in detail below through one specific example. Figure 22 Figure 24 Figure 24

[0192] In one specific example, as shown in FIG. 8D, the number of suction cups 521 for grabbing the upper wafer 012 of the wafer pair 01 is set to four, and the four suction cups 521 are arranged uniformly in the circumferential direction with the second end of the driving arm 51 as the center. The suction assembly 52 further includes a connecting frame 526, which can be circular or cross-shaped. Taking the cross-shaped connecting frame 526 as an example, the four suction cups 521 are installed on each extension end of the connecting frame 526. Specifically, taking the manual pressing mode of the suction cup 521 as an example, each suction cup 521 can be slidably installed on each extension end of the connecting frame 526 through the guide rod 522, and the extension end and the guide rod 522 are further connected through the spring 523. Alternatively, the entire connecting frame 526 can be slidably installed on the second end of the driving arm 51 through the guide rod 522, and the driving arm 51 and the guide rod 522 are further connected through the spring 523. Taking the automatic pressing mode of the suction cup 521 as an example, each extension end of the connecting frame 526 can be installed with a telescopic drive 524 for connecting the corresponding suction cup 521, and the telescopic drive 524 is directly connected to the suction cup 521 through the driving end. Alternatively, the second end of the driving arm 51 can be installed with a telescopic drive 524, and the telescopic drive 524 is directly connected to the connecting frame 526 through the driving end. Figure 24

[0193] ​​​​It should be known that when the suction cup 521 is used to suck the wafer 012 on the wafer pair 01, the suction cup 521 can be used to suck the wafer 012 by directly pressing after being in contact with the wafer 012, or the suction cup 521 can be used to suck the wafer 012 by vacuum suction. For the former suction mode, the wafer 012 needs to be separated from the suction cup 521 by manual separation after the wafer 012 is moved; for the latter suction mode, the wafer 012 can be automatically separated from the suction cup 521 by exhaust. The former mode is only suitable for portable scenarios, and the latter mode can be suitable for portable scenarios and can also be suitable for automated mass production scenarios. For the convenience of understanding, the latter mode will be described in detail below through a specific example.

[0194] For example, as shown in Figure 23 The suction assembly 52 further includes an air pump (not shown); the air pump can be installed in the machine body 11 or can be installed outside the machine body 11, and can be set as needed. The suction cup 521 is connected with the output end of the telescopic drive 524 through a hollow connecting sleeve 5211, the connecting sleeve 5211 is in communication with the suction cup 521, and the connecting sleeve 5211 is provided with an air pipe interface 5212 on one side in communication; the working end of the air pump can be connected with the air pipe interface 5212 through an air pipe, so as to connect the working end of the air pump with the suction cup 521. When the wafer 012 needs to be sucked, the air pump can suck the suction cup 521 to achieve vacuum suction; when the wafer 012 needs to be released, the air pump can exhaust the suction cup 521 to drive the suction cup 521 to separate from the wafer 012.

[0195] In some embodiments, as shown in Figure 2 One side of the workbench 1 is rotatably provided with a protective cover 14 for protecting the debonding process of the wafer pair 01. That is, the protective cover 14 can cover the entire table top 110; in order to facilitate observation of the debonding process of the wafer pair 01, the protective cover 14 can be made of transparent materials such as acrylic plates, transparent organic plates, tempered glass, etc. In order to avoid corrosion of the chemical solvent sprayed by the solvent spraying mechanism 4 on the protective cover 14, the protective cover 14 needs to select a corrosion-resistant material when selecting the material. In order to avoid interference of the protective cover 14 with the air duct of the cooling device 13 when covering the table top 110, an air inlet 140 can be provided on one side of the protective cover 14 close to the vertical surface 116, and the air inlet 140 can be directed to the air outlet 117 on the vertical surface 116 when the protective cover 14 covers the table top 110.

[0196] In some embodiments, as shown in Figure 2As shown, the wafer pair debonding device of the present application further comprises a control panel 15 installed on the workbench 1; the body 11 comprises a table top 110 and a control part, and the control panel 15 can be arranged on the control part, and the control panel 15 controls the debonding process of the wafer pair 01 through the built-in control system. Specifically, the control panel 15 can control the tension of the cutting line 200, the moving speed of the cutting line 200, the spraying flow of the solvent spraying mechanism 4, the heating temperature of the heating device, and the like, and display the parameters; the specific control program is known to those skilled in the art, and therefore will not be described in detail here. For the vacuum pressure of the adsorption device 19 in the adsorption process, a vacuum pressure gauge 18 can also be arranged on the control part to display the vacuum pressure.

[0197] In some embodiments, as Figure 2 As shown, the wafer pair debonding device of the present application further comprises an alarm lamp 16 and an emergency stop button 17 installed on the workbench 1; the alarm lamp 16 and the emergency stop button 17 can be specifically installed on the side of the control part. Among them, the alarm lamp 16 is used for alarming the failure of the debonding process of the wafer pair 01; the emergency stop button 17 is used for stopping the wafer pair 01 debonding device.

[0198] It can be understood that during the debonding process of the cutting line 200, if it is detected that the tension of the cutting line 200 is too small or too large, or the heating temperature of the heating device is too high or too low, or the vacuum pressure of the adsorption device 19 is insufficient, etc., all of which will cause the debonding process of the wafer pair 01 to be abnormal, at which time the alarm lamp 16 can be used to alarm to remind the operator to pay attention. For abnormal conditions that will seriously affect the debonding, which is difficult or impossible to correct through the control panel 15, the entire device can be stopped through the emergency stop button 17 to ensure that the abnormal condition does not spread.

[0199] The above describes the basic principles, main features and advantages of the present application. Those skilled in the art should understand that the present application is not limited to the above embodiments, and the above embodiments and descriptions in the specification are only the principles of the present application. Without departing from the spirit and scope of the present application, various changes and improvements can be made to the present application, and these changes and improvements all fall within the scope of the claimed present application. The scope of protection claimed by the present application is defined by the appended claims and their equivalents.

Claims

1. A wafer pair debonding device, characterized in that, include: A worktable; the worktable is used to place and fix the wafer pair to be debonded. The wafers are bonded together using an adhesive layer; A winding bracket; the winding bracket is slidably mounted on the workbench; as well as Cutting wire; the cutting wire is mounted on the worktable via the winding bracket and aligned with the adhesive layer of the wafer pair; The winding bracket is driven manually or by a power source to move the dicing wire parallel to the wafer pair. The dicing wire moves through the adhesive layer of the wafer pair to debond it.

2. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The cutting line is translated along a first direction parallel to the wafer pair.

3. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The cutting line is translated along a first direction parallel to the wafer pair, and at the same time, the cutting line is reciprocated or translated unidirectionally along a second direction parallel to the wafer pair. The first direction and the second direction are perpendicular to each other.

4. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The first end of the cutting line is fixed in position, and the cutting line rotates around the first end in the direction parallel to the wafer pair.

5. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The dicing line and the wafer pair are adapted to perform relative unidirectional continuous rotation around the geometric center of the wafer pair, and the distance between the dicing line and the geometric center of the wafer pair gradually decreases during the debonding process.

6. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The dicing line and the wafer pair are adapted to reciprocate at a set angle, and the distance between the dicing line and the geometric center of the wafer pair gradually changes during the debonding process.

7. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The thickness of the cutting line is less than 10 times the thickness of the adhesive layer.

8. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The material of the cutting line is one or a combination of synthetic or natural polymer materials, metallic materials, ceramic or inorganic materials, and composite materials.

9. The wafer pair debonding apparatus as described in claim 8, characterized in that, The cutting line adopts a rigid structure and is generally in the shape of a sheet or saw.

10. The wafer pair debonding apparatus as described in claim 8, characterized in that, The cutting wire adopts a flexible structure and is either linear or sheet-like in shape. For linear cutting wires, it is suitable to be obtained by winding single or multiple filaments, and for sheet-like cutting wires, it is suitable to be obtained by winding multiple filaments and then flattening them.

11. The wafer pair debonding apparatus as described in claim 10, characterized in that, The winding bracket is bow-shaped, and the cutting wire is tensioned at both ends of the winding bracket.

12. The wafer pair debonding apparatus as described in claim 10, characterized in that, The winding brackets are in pairs, and the cutting wire is tensioned between the two winding brackets.

13. The wafer pairing and debonding apparatus as described in claim 12, characterized in that, Each of the winding supports is provided with a guide frame, and the guide frame has a horizontally extending guide opening for the cutting wire to pass through, so that the cutting wire of the wafer structure remains parallel to the wafer pair during the debonding process.

14. The wafer pairing and debonding apparatus as described in claim 12, characterized in that, At least one of the winding supports is equipped with an automatic winding device, and the end of the cut wire is wound around the automatic winding device. The automatic winding device tensions the cutting wire by rotating and winding it.

15. The wafer pair debonding apparatus as described in claim 14, characterized in that, The automatic winding device is mounted on one of the winding supports, and a winding roller is rotatably mounted on the other winding support via a first elastic element; The two ends of the cutting line are respectively wound around the electric collecting device and the winding roller; the automatic winding device drives the cutting line to reciprocate or move in one direction by rotation.

16. The wafer pairing and debonding apparatus as described in claim 14, characterized in that, The automatic winding device is installed on both of the winding supports; The cutting line can be tensioned by keeping one of the automatic winding devices stationary and rotating the other, or by rotating the two automatic winding devices in opposite directions. The two automatic winding devices rotate synchronously in the same direction to drive the cutting line to reciprocate or move in one direction.

17. The wafer pairing and debonding apparatus as described in claim 14, characterized in that, A pressure sensor is installed on the winding bracket, and the pressure sensor is used to identify the tension of the cutting wire.

18. The wafer pair debonding apparatus as described in claim 12, characterized in that, The wafer debonding device further includes a displacement mechanism mounted on the worktable. The displacement mechanism is connected to the winding support and is used to drive the winding support to move. The displacement mechanism is driven by one of the following methods: pneumatic drive, hydraulic drive, and electric motor drive.

19. The wafer pair debonding apparatus as described in claim 18, characterized in that, The displacement mechanism includes a first displacement device and a second displacement device connected by a drive, and the driving directions of the first displacement device and the second displacement device are perpendicular. The first displacement device drives the winding bracket to move the cutting wire in a first direction, and the second displacement device drives the winding bracket to move the cutting wire in a second direction.

20. The wafer pair debonding apparatus as described in claim 18, characterized in that, There are two displacement mechanisms, and the two winding brackets are respectively installed on the corresponding displacement mechanisms, and the two displacement mechanisms move synchronously.

21. The wafer pair debonding apparatus according to any one of claims 1-20, characterized in that, The workbench includes: Organism; Placement stage; the placement stage is mounted on the machine body, and the wafer pairs to be debonded are placed on the placement stage; and Clamping device; the clamping device is used to position and clamp the wafer pairs placed on the placement stage.

22. The wafer pair debonding apparatus as described in claim 21, characterized in that, The upper surface of the placement stage is provided with evenly distributed grooves, which are connected to the lower surface of the placement stage through a connection port; the wafers to be debonded are placed on the upper surface of the placement stage and cover the grooves. The clamping device is an adsorption device, which is installed inside the machine body and connected to the connection port through the working port. The adsorption device is used to evacuate the groove.

23. The wafer pair debonding apparatus as described in claim 21, characterized in that, The placement platform is rotatably mounted on the body via one-sided damping; or, a rotating device mounted on the body is driven to one side of the placement platform. The placement platform is adapted to rotate vertically within a range of 0 to 180° around the machine body.

24. The wafer pair debonding apparatus as described in claim 21, characterized in that, The worktable also includes a heating device, which is installed on the placement stage and is used to heat the wafer pairs to be debonded placed on the placement stage.

25. The wafer pair debonding apparatus as described in claim 24, characterized in that, The worktable also includes a cooling device, which is installed on the machine body or the placement stage. The cooling device is used to cool down the wafer pairs to be debonded placed on the placement stage.

26. The wafer pair debonding apparatus as described in claim 21, characterized in that, The wafer pair debonding apparatus further includes a solvent spraying mechanism for spraying chemical solvents onto the wafer pairs to be debonded placed on the worktable; the chemical solvents are used to dissolve the adhesive layer at the edge of the wafer pairs, and the dicing line is adapted to cut along the dissolved position of the adhesive layer.

27. The wafer pair debonding apparatus as described in claim 26, characterized in that, The solvent spraying mechanism includes: A liquid reservoir; the liquid reservoir is used to hold the chemical solvent; Nozzle; the nozzle is mounted on the side of the worktable and faces the adhesive layer of the wafer pair; and A drive pump; the input and output ends of the drive pump are respectively connected to the reservoir and the nozzle, and the drive pump is used to pump the chemical solvent in the reservoir to the nozzle for spraying to the edge of the adhesive layer.

28. The wafer pair debonding apparatus as described in claim 27, characterized in that, The nozzles are provided in multiple locations, and the multiple nozzles are arranged at equal intervals along the circumferential direction of the wafer pair.

29. The wafer pair debonding apparatus as described in claim 27, characterized in that, A solvent collection tank is provided on the side of the workbench, which is used to collect the sprayed chemical solvent; the solvent collection tank is connected to the input end of the drive pump.

30. The wafer pair debonding apparatus as described in claim 27, characterized in that, The solvent spraying mechanism also includes a solvent heater for heating the unsprayed chemical solvent.

31. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The wafer debonding device also includes a gripping mechanism mounted on the worktable; The gripping mechanism grips the wafer located on top of the wafer pair via its gripping end. The gripping mechanism is used to drive the gripped wafer to perform translation or rotation parallel to the wafer pair.

32. The wafer pairing and debonding apparatus as described in claim 31, characterized in that, The grasping mechanism includes: A drive arm; the drive arm is movably mounted on the side of the worktable; and Adsorption assembly; the adsorption assembly is mounted on the drive arm; The adsorption component is used to adsorb the wafer located on the upper layer of the wafer pair, and the driving arm is used to move the adsorption component.

33. The wafer pair debonding apparatus as described in claim 32, characterized in that, The drive arm includes a connecting arm, which is configured to be parallel to the wafer pair. The connecting arm is rotatably mounted on the worktable via a first end, and the adsorption assembly is mounted on the second end of the connecting arm.

34. The wafer pairing and debonding apparatus as described in claim 33, characterized in that, The drive arm also includes a rotary driver, which is fixedly mounted on the worktable and connected to the first end of the connecting arm via a drive end. The rotary driver is used to drive the connecting arm to move the adsorption assembly.

35. The wafer pair debonding apparatus as described in claim 32, characterized in that, The adsorption component includes: The suction cup; the suction cup is slidably mounted on the second end of the drive arm along the axial direction of the wafer pair via a guide rod; and The second elastic element; the guide rod and the drive arm are connected by the second elastic element. The initial height of the suction cup is located above the wafer pair, and the suction cup is driven to adsorb the wafer located on the upper layer of the wafer pair by pressing the guide rod.

36. The wafer pair debonding apparatus as described in claim 32, characterized in that, The adsorption component includes: Telescopic actuator; the telescopic actuator is fixedly mounted on the second end of the drive arm; and A suction cup; the suction cup is mounted on the drive end of the telescopic driver along the axial direction of the wafer pair; The initial height of the suction cup is located above the wafer pair, and the telescopic actuator is used to drive the suction cup to approach and adsorb the wafer located on the upper layer of the wafer pair.

37. The wafer pair debonding apparatus as described in claim 35, characterized in that, The number of suction cups is set to multiple; the adsorption assembly also includes a connecting frame, which is provided with multiple extension ends corresponding to the number of suction cups; The connecting frame is fixedly installed at the second end of the drive arm, and the suction cup is slidably installed on the extension end via the guide rod. The guide rod and the extension end are connected by the second elastic element.

38. The wafer pairing and debonding apparatus as described in claim 36, characterized in that, The number of suction cups is set to multiple; the adsorption assembly also includes a connecting frame, which is provided with multiple extension ends corresponding to the number of suction cups; The suction cup is installed on the extension end, and the drive arm is connected to the connecting frame through the drive section of the telescopic driver installed at the second end.

39. The wafer pair debonding apparatus as described in claim 35 or 36, characterized in that, The adsorption assembly also includes an air pump, the working end of which is connected to the suction cup. The air pump controls the suction cup to adsorb and release the wafer from the upper layer by drawing in and releasing air.

40. The wafer pair debonding apparatus as described in claim 1, characterized in that, The wafer pair debonding device also includes a control screen installed on the worktable, which controls the wafer pair debonding process through a built-in control system.

41. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, A protective cover made of transparent material is rotatably mounted on one side of the worktable to protect the wafer pair debonding process.

42. The wafer pairing and debonding apparatus as described in claim 1, characterized in that, The wafer debonding device also includes an alarm light and an emergency stop button installed on the workbench; The alarm light is used to alert the system to faults occurring during the wafer pair debonding process; the emergency stop button is used to control the shutdown of the wafer pair debonding device.

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