Radio frequency band switching in power management integrated circuits

Abstract

Radio frequency (RF) band switching in a power management integrated circuit (PMIC) is provided. Herein, the PMIC is configured to adapt a modulation voltage to amplify an RF signal for transmission in a different RF frequency band. In embodiments disclosed herein, a band switching circuit in the PMIC is configured to receive a band switching indication to switch from a current RF band to a different RF band. Thus, the band switching circuitry may cause the PMIC to reload a corresponding set of parameters, thereby reloading the PMIC at a defined switching interval (e.g., lt; 5 microseconds) to adapt the modulation voltages of the different RF bands. Thus, the PMIC can be flexibly configured to adapt the modulation voltage between multiple RF bands with increasingly stringent switching delay requirements.

Description

[0001] Cross-referencing related applications

[0002] This application claims the benefit of U.S. Provisional Patent Application Serial No. 63 / 501,279, filed May 10, 2023, the disclosure of which is hereby incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure generally relates to a power management integrated circuit (PMIC) configured to adjust and modulate voltage to amplify radio frequency (RF) signals for transmission in different RF bands. Background Technology

[0004] Fifth-generation (5G) New Radio (NR) is widely considered to be the next generation of wireless communication technology, surpassing current third-generation (3G) and fourth-generation (4G) technologies. In this regard, wireless communication devices capable of supporting 5G-NR wireless communication technology are expected to achieve higher data rates, improved coverage, enhanced signal transmission efficiency, and reduced latency.

[0005] Downlink and uplink transmissions in 5G-NR systems are widely based on Orthogonal Frequency Division Multiplexing (OFDM) technology. In OFDM-based systems, physical radio resources are divided into multiple subcarriers in the frequency domain and multiple OFDM symbols in the time domain. The subcarriers are orthogonally separated by subcarrier spacing (SCS). OFDM symbols are separated by a cyclic prefix (CP), which acts as a guard band to help overcome inter-symbol interference (ISI) between OFDM symbols.

[0006] In OFDM-based systems, radio frequency (RF) signals are typically modulated into multiple subcarriers in the frequency domain and multiple OFDM symbols in the time domain. The multiple subcarriers occupied by the RF signal collectively define the modulation bandwidth of the RF signal. On the other hand, the multiple OFDM symbols define multiple time intervals during which the RF signal is transmitted. In 5G-NR systems, RF signals are typically modulated with high modulation bandwidths exceeding 200MHz.

[0007] The duration of an OFDM symbol depends on the SCS and modulation bandwidth. Table 1 below provides some OFDM symbol durations defined by the 3G Partnership Program (3GPP) standards for various SCS and modulation bandwidths. It is worth noting that the higher the modulation bandwidth, the shorter the OFDM symbol duration. For example, when the SCS is 120 kHz and the modulation bandwidth is 400 MHz, the OFDM symbol duration is 8.93 microseconds.

[0008] Table 1

[0009]

[0010] In 5G-NR systems, RF signals can be modulated with time-varying power that changes from one OFDM symbol to another. In this regard, power amplifier circuits are required to amplify RF signals to a certain power level for each OFDM symbol duration. Such inter-symbol power variations present unique challenges to power management integrated circuits (PMICs) as the PMICs must be able to adapt the modulation voltage supplied to the power amplifier circuits within very short voltage switching intervals (e.g., the CP of each OFDM symbol) to help avoid distortions (e.g., amplitude clipping) in the RF signals.

[0011] Furthermore, the PMICs can also need to adapt the modulation voltage between different RF bands. It can be appreciated that the PMICs can have to generate modulation voltages for different RF bands based on different configuration parameters. Therefore, it is desirable to switch the configuration parameters in time to ensure that the PMICs can adapt the modulation voltage within very short voltage switching intervals. SUMMARY

[0012] Embodiments of the present disclosure relate to radio frequency (RF) band switching in a power management integrated circuit (PMIC). In this regard, the PMIC is configured to adapt a modulation voltage to amplify RF signals for transmission in different RF bands. In the embodiments disclosed herein, a band switching circuit in the PMIC is configured to receive a band switching indication to switch from a current RF band to a different RF band. Accordingly, the band switching circuit can cause the PMIC to reload a corresponding set of parameters, thereby adapting the modulation voltage for the different RF band within a defined switching interval (e.g., < 5 microseconds). As a result, the PMIC can be flexibly configured to adapt the modulation voltage between multiple RF bands under increasingly stringent switching delay requirements.

[0013] On one hand, a PMIC is provided. The PMIC includes voltage processing circuitry. The voltage processing circuitry is configured to generate a modulation voltage based on a first set of parameters predefined for a first RF band and a second set of parameters predefined for a second RF band different from the first RF band. The PMIC also includes a band switching circuit. The band switching circuitry is configured to receive a band switching instruction to switch from the first of the first RF band and the second RF band to the second of the first RF band and the second RF band. The band switching circuitry is further configured to cause the voltage processing circuitry to switch, within a defined switching interval, from generating the modulation voltage based on one of the first predefined first set of parameters and the second set of parameters for the first RF band and the second RF band to generating the modulation voltage based on the other of the second predefined first set of parameters and the second set of parameters for the first RF band and the second RF band.

[0014] On the other hand, a wireless device is provided. The wireless device includes one or more PMICs. Each of the one or more PMICs includes voltage processing circuitry. The voltage processing circuitry is configured to generate a modulation voltage based on a first set of parameters predefined for a first RF band and a second set of parameters predefined for a second RF band different from the first RF band. Each of the one or more PMICs also includes band switching circuitry. The band switching circuitry is configured to receive a band switching instruction to switch from the first of the first RF band and the second RF band to the second of the first RF band and the second RF band. The band switching circuitry is further configured to cause the voltage processing circuitry to switch, within a defined switching interval, from generating the modulation voltage based on one of the first predefined first set of parameters and the second set of parameters for the first RF band and the second RF band to generating the modulation voltage based on the other of the second predefined first set of parameters and the second set of parameters for the first RF band and the second RF band.

[0015] On the other hand, a method for switching RF bands in a wireless device is provided. The method includes generating a modulation voltage based on a first set of parameters predefined for a first RF band and a second set of parameters predefined for a second RF band different from the first RF band. The method further includes receiving a band switching instruction from the first of the first RF band and the second RF band to the second of the first RF band and the second RF band. The method also includes switching, within a defined switching interval, from generating the modulation voltage based on one of the first and second predefined parameter sets for the first and second RF bands to generating the modulation voltage based on the other of the second predefined parameter sets for the first and second RF bands.

[0016] Those skilled in the art will recognize the scope of this disclosure and understand its additional aspects after reading the following detailed description of preferred embodiments and the accompanying drawings. Attached Figure Description

[0017] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate several aspects of this disclosure and, together with the specification, serve to explain the principles of this disclosure.

[0018] Figure 1 This is a schematic diagram of an exemplary wireless communication circuit, wherein a power management integrated circuit (PMIC) is configured, according to embodiments of the present disclosure, to rapidly adapt modulation voltages between different radio frequency (RF) bands based on different parameter sets;

[0019] Figure 2A It demonstrates that it can be made by Figure 1 The PMIC in the diagram uses a thermal voltage switching scheme to quickly adapt the modulation voltage.

[0020] Figure 2B It demonstrates that it can be made by Figure 1 The PMIC in the diagram uses a cold voltage switching scheme to quickly adapt the modulation voltage.

[0021] Figure 3 It is possible Figure 1 A schematic diagram of an exemplary band switching circuit for achieving rapid adjustment of modulation voltage is provided in the PMIC.

[0022] Figure 4 This is a schematic diagram of an exemplary wireless communication circuit, which is configured to include a plurality of PMICs, each PMIC according to Figure 1 Implementation configuration;

[0023] Figure 5This is a schematic diagram of an exemplary communication device, in which the following can be provided: Figure 1 and 4 Wireless communication circuit; and

[0024] Figure 6 It is used in Figure 1 and 4 A flowchart illustrating an exemplary process for switching RF frequency bands in a wireless communication circuit. Detailed Implementation

[0025] The embodiments described below illustrate the information necessary to enable those skilled in the art to practice the embodiments and demonstrate the best mode of practice. After reading the following description with reference to the accompanying drawings, those skilled in the art will understand the concepts of this disclosure and will appreciate the application of these concepts not specifically set forth herein. It should be understood that these concepts and applications fall within the scope of this disclosure and the appended claims.

[0026] It will be understood that while terms such as first, second, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish different elements. For example, a first element may be referred to as a second element without departing from the scope of this disclosure, and similarly, a second element may be referred to as a first element. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0027] It should be understood that when an element, such as a layer, region, or substrate, is referred to as "on another element" or "extending to another element," it may be directly located on or directly extended to the other element, or intermediate elements may be present. Conversely, when an element is referred to as "directly located on another element" or "directly extended to another element," no intermediate elements are present. Similarly, it should be understood that when an element, such as a layer, region, or substrate, is referred to as "on top of another element" or "extending over another element," it may be directly located on top of or directly extended over the other element, or intermediate elements may be present. Conversely, when an element is referred to as "directly located on top of another element" or "extending directly over another element," no intermediate elements are present. It will also be understood that when an element is referred to as "connected" or "coupled" to another element, it may be directly connected to or coupled to the other element, or intermediate elements may be present. Conversely, when an element is referred to as "directly connected" or "directly coupled" to another element, no intermediate elements are present.

[0028] For example, relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe the relationship of one element, layer, or region to another element, layer, or region as shown in the figures. It should be understood that these terms, and those discussed above, are intended to include different orientations of the device other than those depicted in the figures.

[0029] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” are also intended to include the plural forms. It should also be understood that, when used herein, the terms “comprises,” “comprising,” “includes,” and / or “including” specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0030] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that, unless expressly defined herein, terms used herein shall be interpreted as having the same meaning as they have in the context of this specification and in the relevant art, and shall not be interpreted in an idealized or overly formal sense.

[0031] Embodiments of this disclosure relate to radio frequency (RF) band switching in a power management integrated circuit (PMIC). Herein, the PMIC is configured to adapt modulation voltages to amplify RF signals for transmission in different RF bands. In the embodiments disclosed herein, the band switching circuitry in the PMIC is configured to receive a band switching indication to switch from the current RF band to a different RF band. Therefore, the band switching circuitry can cause the PMIC to reload a corresponding set of parameters, thereby adapting the modulation voltages of the different RF bands within a defined switching interval (e.g., <5 microseconds). Thus, the PMIC can be flexibly configured to adapt the modulation voltages between multiple RF bands under increasingly stringent switching delay requirements.

[0032] Figure 1 This is a schematic diagram of an exemplary wireless communication circuit 10, in which the PMIC 12 is configured to rapidly adapt the modulation voltage V across different RF bands based on different parameter sets. CC(For example, envelope tracking voltage or average power tracking voltage). In an embodiment, PMIC 12 includes a band switching circuit 14 and a voltage processing circuit 16. As described in detail below, different parameter sets (hereinafter interchangeably referred to as "first parameter set P") 频带-A "and "the second parameter set P 频带-B (This refers to different RF bands, which can be interchangeably referred to as "the first RF band RFB" below) A "and "second RF band RFB" B Predefined. First parameter set P 频带-A Second parameter set P 频带-B Each parameter set in the configuration may include one or more parameters that configure the voltage processing circuit 16 to generate the first RF band RFB. A Second RF band RFB B The corresponding modulation voltage V in CC .

[0033] In a non-limiting example, the first RF band RFB A It can be a time-division duplex (TDD) band 78, and a second RF band RFB. B It can be a frequency division duplex (FDD) band 3, or vice versa. Understandably, the first RF band is RFB. A Second RF band RFB B It can be any other combination of RF bands defined by regulatory agencies, industry groups, and / or standards organizations.

[0034] First parameter set P 频带A Second parameter set P 频带-B The data is preloaded into memory circuit 18, which can be located in the band switching circuit 14 or elsewhere in the PMIC 12. In this embodiment, the first parameter set P... 频带-A Second parameter set P 频带-B It can be used by transceiver circuit 20, such as The RFFE extended register write command sequence defined in the Alliance RFFE specification is preloaded into memory circuit 18 via RF front-end (RFFE) interface 22.

[0035] It is worth noting that the first parameter set P is transmitted through the RFFE interface 22. 频带-A Second parameter set P 频带-B Loading any parameter set from transceiver circuit 20 to PMIC 12 may take up to forty-five microseconds (45 microseconds). In this regard, if the first parameter set P 频带-A Or the second parameter set P 频带-B Response to the first RF band RFB A With the second RF band RFBB The switching between transceiver circuits 20 and PMIC 12 dynamically transmits data, making it impossible to adjust the modulation voltage V under increasingly stringent switching delay requirements. CC In contrast, by using the first parameter set P 频带-A Second parameter set P 频带-B Based on the embodiments disclosed herein, the frequency band switching circuit 14 can be preloaded into the memory circuit 18 in response to receiving data from the first RF band RFB. A Switch to the second RF band RFB B The frequency band switching indication 24 is based on the first parameter set P 频带-A Second parameter set P 频带-B The selected fast reconfiguration voltage processing circuit 16, and vice versa, is used. Therefore, the voltage processing circuit 16 can adjust the modulation voltage V within a defined switching interval (e.g., <5 microseconds). CC This makes it possible for PMIC 12 to support inter-symbol voltage adaptation, such as voltage adaptation between two adjacent orthogonal frequency division multiplexing (OFDM) symbols.

[0036] In this document, PMIC 12 may further include a first voltage output 26A, a second voltage output 26B, and a switching circuit 28. The first voltage output 26A may be coupled to a first power amplifier circuit 30A, which is configured based on a modulation voltage V. CC Amplify the first RF signal 32A to supply the first RF band RFB. A Transmission in the middle. The second voltage output 26B can be coupled to the second power amplifier circuit 30B, which is configured based on the modulation voltage V. CC Amplify the second RF signal 32B to supply the second RF band RFB. B Transmission occurs during the process. The first RF signal 32A and the second RF signal 32B are both generated by the transceiver circuit 20.

[0037] In this embodiment, the switching circuit 28 includes a first switch S. 频带-A Second switch S 频带-B First switch S 频带-A Coupled between the voltage processing circuit 16 and the first voltage output 26A, and the second switch S 频带-B Coupled between voltage processing circuit 16 and second voltage output 26B. When the first switch S... 频带-A Closed and the second switch S 频带-B When disconnected, the modulation voltage V CC The first voltage output 26A is provided to the first power amplifier circuit 30A, thereby amplifying the first RF signal 32A for use in the first RF band RFB. ATransmission in the middle. In contrast, when the first switch S... 频带-A Disconnect and the second switch S 频带 When -B is closed, the modulation voltage V CC The second voltage output 26B is provided to the second power amplifier circuit 30B, thereby amplifying the second RF signal 32B for use in the second RF band RFB. B Transmission in China.

[0038] In this regard, in response to RFB in the first RF band A With the second RF band RFB B Switching between them to adjust the modulation voltage V CC This will involve based on the selected parameter set P. SEL (P SEL ∈(P 频带-A ,P 频带-B Configure the voltage processing circuit 16 and appropriately switch the first switch S. 频带-A Second switch S 频带-B Furthermore, PMIC 12 must complete loading the selected parameter set P within the defined switching interval. SEL And switch the first switch S 频带-A Second switch S 频带-B .

[0039] In one embodiment, PMIC 12 can be configured to adjust the modulation voltage V based on a thermal voltage switching scheme. CC ,like Figure 2A As shown in the diagram. In this respect, Figure 2A It demonstrates that it can be made by Figure 1 The PMIC 12 in the middle uses a fast-adjusting modulation voltage V CC A diagram of the thermal voltage switching scheme. Figure 1 and 2A Common elements between them are shown here by reference numerals in the accompanying drawings and will not be described again herein.

[0040] In this paper, PMIC 12 is configured to operate between two consecutive OFDM symbols S N S N+1 Adjust the modulation voltage V between CC For the purpose of distinction, OFDM symbol S N Interchangeably referred to as the "current OFDM symbol", and immediately following the OFDM symbol S N The subsequent OFDM symbol S N+1 They are interchangeably referred to as "future OFDM symbols".

[0041] In the non-restrictive instance, in the current OFDM symbol S NDuring this period, the first power amplifier circuit 30A is configured to amplify the first RF signal 32A for supplying power to the first RF band RFB. A Transmission in the middle (RFB) A (Connected). Therefore, based on the first parameter set P 频带-A Generate modulation voltage V CC First switch S 频带-A Close to couple the voltage processing circuit 16 to the first voltage output 26A, and the second switch S 频带-B Disconnect to decouple the voltage processing circuit 16 from the second voltage output 26B.

[0042] In the current OFDM symbol S N During this period (e.g., at time T0), the band switching circuit 14 receives a band switching indication 24, which indicates the switching from the current OFDM symbol S. N The first RF band RFB A Switch to future OFDM symbol S N+1 The second RF band RFB B It is understandable that in the future, OFDM symbol S... N+1 During this period, it is necessary to base it on the second parameter set P. 频带-B Generate modulation voltage V CC Therefore, as mentioned earlier, PMIC 12 must complete the reloading of the second parameter set P within the defined switching interval. 频带-B Disconnect the first switch S 频带-A and closing the second switch S 频带-B .

[0043] Therefore, the frequency band switching circuit 14 is configured in the future OFDM symbol S N+1 At the start of (i.e., time T1), the second switch S is closed simultaneously. 频带-B And disconnect the first switch S 频带-A This decouples the voltage processing circuit 16 from the first voltage output 26A and couples the voltage processing circuit 16 to the second voltage output 26B. At time T2, the band switching circuit 14 must also complete the reloading of the second parameter set P. 频带-B According to the second parameter set P 频带-B The exact size of the frequency band switching circuit 14 can be determined in future OFDM symbols S. N+1 The second parameter set P is reloaded at or before the start of (i.e., time T1). 频带-B Therefore, times T2 and T1 define the actual switching interval, which must be less than or equal to the defined switching interval. Thus, at time T2, the voltage processing circuit 16 will base its operation on the second parameter set P. 频带-B Generate modulation voltage VCC First switch S 频带-A Disconnect to decouple the voltage processing circuit 16 from the first voltage output 26A, and the second switch S 频带-B The circuit is closed to couple the voltage processing circuit 16 to the second voltage output 26B, and the second power amplifier circuit 30B is active to amplify the second RF signal 32B for use in the second RF band RFB. B (RFB B Transmission occurs during connection.

[0044] In another embodiment, PMIC 12 can be configured to adapt the modulation voltage V based on a cold voltage switching scheme. CC ,like Figure 2B As shown in the image. Figure 2B It demonstrates that it can be made by Figure 1 The PMIC 12 in the middle uses a fast-adjusting modulation voltage V CC A diagram of the cold voltage switching scheme. Figure 1 and 2B Common elements between them are shown here by reference numerals in the accompanying drawings and will not be described again herein.

[0045] In this paper, PMIC 12 is configured to operate between two adjacent OFDM symbols S with a phase-separated frequency band switching gap of 34 (e.g., 5 microseconds). N S N+1 Adjust the modulation voltage V between CC For the purpose of distinction, OFDM symbol S N Interchangeably referred to as the "current OFDM symbol", and immediately following the OFDM symbol S N The subsequent OFDM symbol S N+1 They are interchangeably referred to as "future OFDM symbols".

[0046] In the non-restrictive instance, in the current OFDM symbol S N During this period, the first power amplifier circuit 30A is configured to amplify the first RF signal 32A for supplying power to the first RF band RFB. A Transmission in the middle (RFB) A (Connected). Therefore, based on the first parameter set P 频带-A Generate modulation voltage V CC First switch S 频带-A Close to couple the voltage processing circuit 16 to the first voltage output 26A, and the second switch S 频带-B Disconnect to decouple the voltage processing circuit 16 from the second voltage output 26B.

[0047] In the current OFDM symbol S NDuring this period (e.g., at time T0), the band switching circuit 14 receives a band switching indication 24, which indicates that in the current OFDM symbol S N The first RF band RFB is turned off at the end of time (T1). A Therefore, the frequency band switching circuit 14 in the current OFDM symbol S N The first switch S is disconnected at the end of the process (time T1). 频带-A This decouples the voltage processing circuit 16 from the first voltage output 26A. It is worth noting that at time T1, the first switch S... 频带-A Second switch S 频带-B Both are disconnected, and therefore, neither the first power amplifier circuit 30A nor the second power amplifier circuit 30B receives the modulation voltage V. CC In other words, in the first RF band RFB A (RFB A (Shutdown) and second RF band RFB B (RFB B There is no transmission in any of the (off) options.

[0048] During the band switching gap 34 (e.g., at time T2), the band switching circuit 14 receives an instruction to turn on the second RF band RFB. B The frequency band switching indication 24. Therefore, the frequency band switching circuit 14 begins to configure the voltage processing circuit 16 to be based on the second parameter set P. 频带-B Generate modulation voltage V CC And close the second switch S 频带-B The voltage processing circuit 16 is coupled to the second voltage output 26B. It is understood that the band switching circuit 14 must complete the reloading of the second parameter set P at or before the end of the band switching gap 34 (e.g., time T3). 频带-B And close the second switch S 频带-B This allows the second power amplifier circuit 30B to be used in future OFDM symbol S N+1 The second RF signal 32B is amplified at the beginning (e.g., time T3) to supply power in the second RF band RFB. B (RFB B Transmission occurs during the connection process. In this document, the band switching gap 34 defines the switching interval.

[0049] Figure 3 It is provided to configure according to embodiments of this disclosure. Figure 1 A schematic diagram illustrating an exemplary frequency band switching circuit 14. Figure 1 and 3 Common elements between them are shown here by reference numerals in the accompanying drawings and will not be described again herein.

[0050] In one embodiment, the band switching circuit 14 includes a register group 36, an RFFE circuit 38, and a memory controller 40. The register group 36 includes one or more control registers 42(1)-42(X) and a plurality of configuration registers 44 organized into one or more parameter clusters 46(1)-46(Y). Hereinafter, the control registers 42(1)-42(X) may be configured to store high-level control information of the PMIC 12. For example, the memory controller 40 may be configured to read the band switching indication 24 from the control registers 42(1)-42(X) and control the memory circuit 18 to switch the first parameter set P... 频带-A Second parameter set P 频带-B Selected parameter set P SEL Loaded into parameter cluster 46(1)-46(Y).

[0051] In the unrestricted instance, the first parameter set P 频带-A Second parameter set P 频带-B Each parameter set in the cluster can include one or more parameter subsets 48(1)-48(Y). In this regard, the memory controller 40 is configured to load each parameter subset in the parameter subsets 48(1)-48(Y) into the corresponding parameter cluster in the parameter clusters 46(1)-46(Y). In one embodiment, the parameter subsets 48(1)-48(Y) can be loaded into the parameter clusters 46(1)-46(Y) simultaneously to help reduce loading time. The voltage processing circuit 16 then reads the parameter subsets 48(1)-48(Y) from the parameter clusters 46(1)-46(Y) and generates the modulation voltage V accordingly. CC .

[0052] RFFE circuit 38 is configured to read / write command sequences based on the RFFE extended register to transfer the first parameter set P 频带-A Second parameter set P 频带-B Preloaded into memory circuit 18. In a non-limiting example, RFFE circuit 38 includes an RFFE finite state machine (FSM) 50, a multiplexer (MUX) 52, and a register map (REGMAP) 54. The RFFE extended register read / write command sequence defined in the Alliance RFFE specification has an address space of 256 (256) registers, labeled REG_000 to REG_255 in REGMAP 54. In this document, RFFE circuit 38 is configured to use the last three registers in REGMAP 54, REG_253, REG_254, and REG_255, to read or write the first parameter set P. 频带-A Second parameter set P 频带-BIn one embodiment, register group 36 is part of RFFE REGMAP 54. In other words, register group 36 may include any register in the address space of RFFE REGMAP 54 (except for the last three registers REG_253, REG_254, and REG_255).

[0053] It is understandable that the first parameter set P 频带-A Second parameter set P 频带-B Each parameter set needs to be written into memory circuit 18 in multiple data bytes. In this regard, register REG_254 may contain the starting address (denoted as W) indicating the starting address of the multiple data bytes to be written into memory circuit 18. ADDR The write pointer to the REG_255 register. On the other hand, the REG_255 register is filled with multiple data bytes (represented as RW). 数据 The memory controller 40 reads each data byte from the REG_255 register and sequentially writes each data byte into the appropriate location in the memory circuit 18.

[0054] In order to read the first parameter set P from memory circuit 18 频带-A Second parameter set P 频带-B For each parameter set in the register, REG_253 can contain the starting address (denoted as R) indicating the starting address of the multiple data bytes to be read from memory circuit 18. ADDR The read pointer of register REG_255. In this respect, the data byte (denoted as RW) read from memory circuit 18 is stored in register REG_255. 数据 )cover.

[0055] Given that RFFE interface 22 is a serial data interface, and each register in registers REG_000-REG_255 of REGMAP 54 is a multi-bit register, MUX 52 is configured to perform serial-to-parallel conversion during RFFE writes and parallel-to-serial conversion during RFFE reads. Since RFFE circuitry 38 does indeed perform RFFE writes and RFFE reads simultaneously, MUX 52 can be shared between RFFE writes and RFFE reads to help reduce the footprint of band-switching circuitry 14.

[0056] Figure 1 The wireless communication circuit 10 can also be configured to implement multiple-input multiple-output (MIMO), dual-connectivity (DC), and / or licensed assisted access (LAA) operation. Figure 4 This is a schematic diagram of an exemplary wireless communication circuit 56 including multiple PMICs 12A, 12B, each PMIC communicating with... Figure 1 It is configured in the same way as PMIC 12.Figure 1 and 2A Common elements between them are shown here by reference numerals in the accompanying drawings and will not be described again herein.

[0057] In one embodiment, the wireless communication circuit 56 can be configured to simultaneously amplify the first RF signal 32A using a pair of power amplifier circuits 58A and 58C for use in the first RF band RFB. A Simultaneous MIMO transmission. In this regard, the voltage processing circuit 14 in each PMIC of PMIC 12A and 12B must simultaneously switch to a configuration based on the first parameter set P. 频带-A Generate modulation voltage V CC In other words, each PMIC in PMIC 12A and 12B must simultaneously set the first parameter set P... 频带-A from Figure 3 The memory circuit 18 is loaded into the parameter clusters 46(1)-46(Y) in the register group 36.

[0058] In another embodiment, the wireless communication circuit 56 can be configured to simultaneously amplify the second RF signal 32B using a pair of power amplifier circuits 58B, 58D for use in the second RF band RFB. B Simultaneous MIMO transmission. In this regard, the voltage processing circuit 14 in each PMIC of PMIC12A and 12B must simultaneously switch to a configuration based on the second parameter set P. 频带-B Generate modulation voltage V CC In other words, each PMIC in PMIC 12A and 12B must simultaneously set the second parameter set P... 频带-B The parameter clusters 46(1)-46(Y) are loaded from memory circuit 18 into register group 36.

[0059] In another embodiment, the wireless communication circuit 56 may be configured to simultaneously amplify the first RF signal 32A and the second RF signal 32B using power amplifier circuits 58A, 58B, 58D, 58B, 58C, or 58C, 58D for use in the first RF band RFB. A Second RF band RFB B Simultaneous DC or LAA transmission within the PMIC. In this regard, one of the PMICs (e.g., PMIC 12A) in PMIC 12A and 12B must switch to transmission based on the first parameter set P. 频带-A Second parameter set P 频带-B One of them (e.g., the first parameter set P) 频带-A Generate modulation voltage V CCSimultaneously, another PMIC in PMIC12A and 12B (e.g., PMIC 12B) must be switched to be based on the first parameter set P. 频带-A Second parameter set P 频带-B Another one (e.g., the second parameter set P) 频带-B Generate modulation voltage V CC Therefore, each PMIC in PMIC 12A and 12B must use the first parameter set P 频带-A Second parameter set P 频带-B The corresponding parameter cluster 46(1)-46(Y) is loaded from the corresponding memory circuit 18 into the corresponding register group 36.

[0060] Figure 1 Wireless communication circuit 10 and Figure 4 The wireless communication circuit 56 can be provided in the communication device to provide beamforming phase correction. Figure 5 This is a schematic diagram of an exemplary communication device 100, in which a communication device can be provided. Figure 1 Wireless communication circuit 10 and Figure 4 56. Wireless communication circuit.

[0061] In this document, communication device 100 can be any type of communication device, such as a mobile terminal, smartwatch, tablet computer, computer, navigation device, access point, base station (e.g., eNB, gNB, etc.), and any other type of wireless communication device that supports wireless communication (e.g., cellular, wireless local area network (WLAN), Bluetooth, ultra-wideband (UWB), and near-field communication). Communication device 100 will typically include a control system 102, a baseband processor 104, a transmitting circuit system 106, a receiving circuit system 108, an antenna switching circuit system 110, multiple antennas 112, and a user interface circuit system 114. In a non-limiting example, as an example, the control system 102 can be a field-programmable gate array (FPGA). In this case, the control system 102 can at least include a microprocessor, embedded memory circuitry, and a communication bus interface. The receiving circuit system 108 receives radio frequency signals from one or more base stations via antennas 112 and through the antenna switching circuit system 110. Low-noise amplifiers and filters cooperate to amplify and eliminate broadband interference from the received signals for processing. Then, a down-conversion and digitization circuit (not shown) down-converts the filtered received signal to an intermediate or baseband frequency signal, which is then digitized into one or more digital streams using an analog-to-digital converter (ADC).

[0062] The baseband processor 104 processes the digitized received signal to extract the information or data bits transmitted in the received signal. This processing typically includes demodulation, decoding, and error correction operations, which will be discussed in more detail below. The baseband processor 104 is typically implemented in one or more digital signal processors (DSPs) and application-specific integrated circuits (ASICs).

[0063] For transmission, baseband processor 104 receives digitized data representing voice, data, or control information from control system 102, and encodes the digitized data for transmission. The encoded data is output to transmit circuitry system 106, where a digital-to-analog converter (DAC) converts the digitally encoded data into an analog signal, and a modulator modulates the analog signal onto a carrier signal at the desired transmission frequency or multiple frequencies. A power amplifier amplifies the modulated carrier signal to a level suitable for transmission, and the modulated carrier signal is delivered to antenna 112 via antenna switching circuitry system 110. Multiple antennas 112 and replicated transmit circuitry system 106 and receive circuitry system 108 can provide spatial diversity. Those skilled in the art will understand the modulation and processing details.

[0064] In one embodiment, Figure 1 Wireless communication circuit 10 and Figure 4 The wireless communication circuit 56 can be configured to switch the RF frequency band according to the process. In this respect, Figure 6 It is used for switching Figure 1 Wireless communication circuit 10 and Figure 4 A flowchart of an exemplary process 200 in the RF band of the wireless communication circuit 56.

[0065] In this document, process 200 includes RFB based on the first RF band. A Predefined first parameter set P 频带-A And for RFB different from the first RF band A The second RF band RFB B Predefined second parameter set P 频带-B To generate modulation voltage V CC (Step 202). Process 200 also includes receiving RFB from the first RF band. A Second RF band RFB B The first switch in the first RF band RFB A Second RF band RFB B The second frequency band switching indication 24 (step 204) is then issued. Process 200 also includes switching from the first RF band RFB within the defined switching interval. A and the second RF band RFB BThe first predefined first parameter set P in the first parameter set 频带-A and the second parameter set P 频带-B One of them generates the modulation voltage V CC Switching to RF based on the first RF band A and the second RF band RFB B The second predefined first parameter set P in the 频带-A and the second parameter set P 频带-B Another generator in the process generates the modulation voltage V. CC (Step 206).

[0066] Those skilled in the art will recognize improvements and modifications to the preferred embodiments of this disclosure. All such improvements and modifications are considered to be within the scope of the concepts disclosed herein and the claims below.

Claims

1. A power management integrated circuit (PMIC) (12, 12A, 12B), comprising: Voltage processing circuit (16), the voltage processing circuit being configured based on a first radio frequency (RFB) band. A The predefined first parameter set (P) 频带-A ) and for frequencies different from the first RF band (RFB) A The second RF band (RFB) B The predefined second parameter set (P) 频带-B To generate the modulation voltage (V) CC );as well as A frequency band switching circuit (14), the frequency band switching circuit being configured to: Receive from the first RF band (RFB) A ) and the second RF band (RFB) B The first switch in the first RF band (RFB) A ) and the second RF band (RFB) B The second frequency band switching indication (24) in ) and The voltage processing circuit (16) switches between the voltages within the defined switching interval based on the first RF band (RFB). A ) and the second RF band (RFB) B The first predefined first parameter set (P) in ) 频带-A ) and the second parameter set (P 频带-B One of the generated modulation voltages (V) CC Switching to a frequency band based on the first RF band (RFB) A ) and the second RF band (RFB) B The second predefined first parameter set (P) in ) 频带-A ) and the second parameter set (P 频带-B Another of the generated modulation voltages (V) CC ).

2. The PMIC (12, 12A, 12B) according to claim 1, further comprising: A first voltage output (26A) is coupled to a first power amplifier circuit (30A, 58A, 58C), the first power amplifier circuit being configured based on the modulation voltage (V). CC Amplify the first RF signal (32A) to supply power in the first RF band (RFB). A Transmitted in ) A second voltage output (26B) is coupled to a second power amplifier circuit (30B, 58B, 58D), the second power amplifier circuit being configured based on the modulation voltage (V). CC Amplify the second RF signal (32B) to supply power in the second RF band (RFB). B Transmission in ) and Switching circuit (28), the switching circuit comprising: First switch (S) 频带-A The first switch is coupled between the voltage processing circuit (16) and the first voltage output (26A); as well as Second switch (S) 频带-B The second switch is coupled between the voltage processing circuit (16) and the second voltage output (26B).

3. The PMIC (12, 12A, 12B) according to claim 2, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the first RF band (RFB) in the current OFDM symbol. A Switch to the second RF band (RFB) in a future OFDM symbol immediately following the current OFDM symbol. B ); Before the start of the future OFDM symbol, the second parameter set (P) is... 频带-B ) is loaded into the voltage processing circuit (16); and The second switch (S) is closed simultaneously at the start of the future OFDM symbol. 频带-B And disconnect the first switch (S) 频带-A This decouples the voltage processing circuit (16) from the first voltage output (26A) and couples the voltage processing circuit (16) to the second voltage output (26B).

4. The PMIC (12, 12A, 12B) according to claim 2, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the second RF band (RFB) in the current OFDM symbol. B Switch to the first RF band (RFB) in a future OFDM symbol immediately following the current OFDM symbol. A ); Before the start of the future OFDM symbol, the first parameter set (P) is... 频带-A ) is loaded into the voltage processing circuit (16); and The first switch (S) is closed simultaneously at the start of the future OFDM symbol. 频带-A And disconnect the second switch (S) 频带-B This decouples the voltage processing circuit (16) from the second voltage output (26B) and couples the voltage processing circuit (16) to the first voltage output (26A).

5. The PMIC (12, 12A, 12B) according to claim 2, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the first RF band (RFB) in the current OFDM symbol. A Switching to the second RF band (RFB) in a future OFDM symbol that is separated from the current OFDM symbol by a band switching gap (34). B ); Disconnect the first switch (S) at the end of the current OFDM symbol. 频带-A This decouples the voltage processing circuit (16) from the first voltage output (26A); During the frequency band switching interval (34), the second parameter set (P) 频带-B ) is loaded into the voltage processing circuit (16); and The second switch (S) is closed at the beginning of the future OFDM symbol. 频带-B ), to couple the voltage processing circuit (16) to the second voltage output (26B).

6. The PMIC (12, 12A, 12B) according to claim 2, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the second RF band (RFB) in the current OFDM symbol. B Switching to the first RF band (RFB) in a future OFDM symbol that is separated from the current OFDM symbol by a band switching gap (34). A ); Disconnect the second switch (S) at the end of the current OFDM symbol. 频带-B This decouples the voltage processing circuit (16) from the second voltage output (26B). During the frequency band switching interval (34), the first parameter set (P) 频带-A ) is loaded into the voltage processing circuit (16); and The first switch (S) is closed at the beginning of the future OFDM symbol. 频带-A ), to couple the voltage processing circuit (16) to the first voltage output (26A).

7. The PMIC (12, 12A, 12B) according to claim 1, further comprising an RF front-end RFFE interface (22) coupled to a transceiver circuit (20) to receive the band switching indication (24) from the transceiver circuit (20).

8. The PMIC (12, 12A, 12B) according to claim 7, wherein the frequency band switching circuit (14) comprises: Memory circuit (18), the memory circuit being preloaded with the first parameter set (P) 频带-A ) and the second parameter set (P 频带-B ); Register group (36), the register group being configured to: When the voltage processing circuit (16) is configured to generate the first RF band (RFB) A The modulation voltage (V) CC Store the first parameter set (P) when 频带-A );and When the voltage processing circuit (16) is configured to generate the second RF band (RFB) B The modulation voltage (V) CC Store the second parameter set (P) when 频带-B );as well as Memory controller (40), the memory controller being configured to: In response to receiving from the first RF band (RFB) A Switch to the second RF band (RFB) B The frequency band switching indication (24) of the second parameter set (P) will switch the frequency band switching indication (24) of the second parameter set (P) to the second parameter set (P) of ... 频带-B ) is loaded from the memory circuit (18) into the register set (36); and In response to receiving from the second RF band (RFB) B Switch to the first RF band (RFB) A The frequency band switching indication (24) of the first parameter set (P) will be used to switch the frequency band switching indication (24) of the first parameter set (P) to the first parameter set (P) to the second parameter set (P) to the third parameter set (P) to the fourth parameter set (P) to the fifth parameter set (P) to the sixth parameter set (P) to the first parameter set (P) to the fourth parameter set (P) to the fifth parameter set (P) to the first parameter set (P) to the fourth parameter set (P) 频带-A The memory circuit (18) is loaded into the register group (36).

9. The PMIC (12, 12A, 12B) according to claim 8, wherein the band switching circuit (14) further comprises an RFFE circuit (38) configured to receive the first parameter set (P) from the transceiver circuit (20) based on an RFFE extended register read / write command sequence. 频带-A ) and the second parameter set (P 频带-B ).

10. A wireless device (10, 56) comprising: One or more power management integrated circuits (PMICs) (12, 12A, 12B), each PMIC containing: Voltage processing circuit (16), the voltage processing circuit being configured based on a first radio frequency (RFB) band. A The predefined first parameter set (P) 频带-A ) and for frequencies different from the first RF band (RFB) A The second RF band (RFB) B The predefined second parameter set (P) 频带-B To generate the modulation voltage (V) CC );as well as A frequency band switching circuit (14), the frequency band switching circuit being configured to: Receive from the first RF band (RFB) A ) and the second RF band (RFB) B The first switch in the first RF band (RFB) A ) and the second RF band (RFB) B The second frequency band switching indication (24) in ) and The voltage processing circuit (16) switches between the voltages within the defined switching interval based on the first RF band (RFB). A ) and the second RF band (RFB) B The first predefined first parameter set (P) in ) 频带-A ) and the second parameter set (P 频带-B One of the generated modulation voltages (V) CC Switching to a frequency band based on the first RF band (RFB) A ) and the second RF band (RFB) B The second predefined first parameter set (P) in ) 频带-A ) and the second parameter set (P 频带-B Another of the generated modulation voltages (V) CC ).

11. The wireless device (10, 56) of claim 10, wherein each of the one or more PMICs (12, 12A, 12B) further comprises: A first voltage output (26A) is coupled to a first power amplifier circuit (30A, 58A, 58C), the first power amplifier circuit being configured based on the modulation voltage (V). CC Amplify the first RF signal (32A) to supply power in the first RF band (RFB). A Transmitted in ) A second voltage output (26B) is coupled to a second power amplifier circuit (30B, 58B, 58D), the second power amplifier circuit being configured based on the modulation voltage (V). CC Amplify the second RF signal (32B) to supply power in the second RF band (RFB). B Transmission in ) and Switching circuit (28), the switching circuit comprising: First switch (S) 频带-A The first switch is coupled between the voltage processing circuit (16) and the first voltage output (26A); as well as Second switch (S) 频带-B The second switch is coupled between the voltage processing circuit (16) and the second voltage output (26B).

12. The wireless device (10, 56) according to claim 11, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the first RF band (RFB) in the current OFDM symbol. A Switch to the second RF band (RFB) in a future OFDM symbol immediately following the current OFDM symbol. B ); Before the start of the future OFDM symbol, the second parameter set (P) is... 频带-B ) is loaded into the voltage processing circuit (16); and The second switch (S) is closed simultaneously at the start of the future OFDM symbol. 频带-B And disconnect the first switch (S) 频带-A This decouples the voltage processing circuit (16) from the first voltage output (26A) and couples the voltage processing circuit (16) to the second voltage output (26B).

13. The wireless device (10, 56) according to claim 11, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the second RF band (RFB) in the current OFDM symbol. B Switch to the first RF band (RFB) in a future OFDM symbol immediately following the current OFDM symbol. A ); Before the start of the future OFDM symbol, the first parameter set (P) is... 频带-A ) is loaded into the voltage processing circuit (16); and The first switch (S) is closed simultaneously at the start of the future OFDM symbol. 频带-A And disconnect the second switch (S) 频带-B This decouples the voltage processing circuit (16) from the second voltage output (26B) and couples the voltage processing circuit (16) to the first voltage output (26A).

14. The wireless device (10, 56) according to claim 11, wherein the frequency band switching circuit (14) is further configured to: During the current orthogonal frequency division multiplexing (OFDM) symbol, the frequency band switching indication (24) is received to switch from the (RFB) in the current OFDM symbol. A The first RF band is switched to the second RF band (RFB) in a future OFDM symbol that is separated from the current OFDM symbol by a band switching gap (34). B ); Disconnect the first switch (S) at the end of the current OFDM symbol. 频带-A This decouples the voltage processing circuit (16) from the first voltage output (26A); During the frequency band switching interval (34), the second parameter set (P) 频带-B ) is loaded into the voltage processing circuit (16); and The second switch (S) is closed at the beginning of the future OFDM symbol. 频带-B ), to couple the voltage processing circuit (16) to the second voltage output (26B).

15. The wireless device (10, 56) according to claim 11, wherein the frequency band switching circuit (14) is further configured to: During the current Orthogonal Frequency Division Multiplexing (OFDM) symbol, the band switching indication (24) is received to switch from the second RF band (RFB) in the current OFDM symbol. B Switching to the first RF band (RFB) in a future OFDM symbol that is separated from the current OFDM symbol by a band switching gap (34). A ); Disconnect the second switch (S) at the end of the current OFDM symbol. 频带-B This decouples the voltage processing circuit (16) from the second voltage output (26B). During the frequency band switching interval (34), the first parameter set (P) 频带-A ) is loaded into the voltage processing circuit (16); and The first switch (S) is closed at the beginning of the future OFDM symbol. 频带-A ), to couple the voltage processing circuit (16) to the first voltage output (26A).

16. The wireless device (10, 56) of claim 10, wherein each of the one or more PMICs (12, 12A, 12B) further includes an RF front-end RFFE interface (22) coupled to transceiver circuitry (20) to receive the band switching indication (24) from the transceiver circuitry (20).

17. The wireless device (10, 56) according to claim 16, wherein the frequency band switching circuit (14) comprises: Memory circuit (18), the memory circuit being preloaded with the first parameter set (P) 频带-A ) and the second parameter set (P 频带-B ); Register group (36), the register group being configured to: When the voltage processing circuit (16) is configured to generate the first RF band (RFB) A The modulation voltage (V) CC Store the first parameter set (P) when 频带-A );and When the voltage processing circuit (16) is configured to generate the second RF band (RFB) B The modulation voltage (V) CC Store the second parameter set (P) when 频带-B );as well as Memory controller (40), the memory controller being configured to: In response to receiving from the first RF band (RFB) A Switch to the second RF band (RFB) B The frequency band switching indication (24) of the second parameter set (P) will switch the frequency band switching indication (24) of the second parameter set (P) to the second parameter set (P) of ... 频带-B ) is loaded from the memory circuit (18) into the register set (36); and In response to receiving from the second RF band (RFB) B Switch to the first RF band (RFB) A The frequency band switching indication (24) of the first parameter set (P) will be used to switch the frequency band switching indication (24) of the first parameter set (P) to the first parameter set (P) to the second parameter set (P) to the third parameter set (P) to the fourth parameter set (P) to the fifth parameter set (P) to the sixth parameter set (P) to the first parameter set (P) to the fourth parameter set (P) to the fifth parameter set (P) to the first parameter set (P) to the fourth parameter set (P) 频带-A The memory circuit (18) is loaded into the register group (36).

18. The wireless device (10, 56) of claim 17, wherein the band switching circuit (14) further comprises an RFFE circuit (38) configured to receive the first parameter set (P) from the transceiver circuit (20) based on an RFFE extended register read / write command sequence. 频带-A ) and the second parameter set (P 频带-B ).

19. The wireless device (10, 56) according to claim 10, further comprising: A transceiver circuit (20), coupled to each of the one or more PMICs (12, 12A, 12B), and configured to provide the band switching indication (24) to each of the one or more PMICs; and One or more pairs of power amplifier circuits (30A, 30B), (58A, 58B), (58C, 58D), each pair of power amplifier circuits coupled to a corresponding PMIC of the one or more PMICs, each pair of power amplifier circuits being configured to amplify a corresponding one of a first RF signal (32A) and a second RF signal (32B) for use in the first RF band (RFB). A ) and the second RF band (RFB) B The corresponding transmission in ) 20. A method for switching radio frequency (RF) bands in a wireless device (10, 56), the method comprising: Based on the first RF band (RFB) A The predefined first parameter set (P) 频带-A ) and for frequencies different from the first RF band (RFB) A The second RF band (RFB) B The predefined second parameter set (P) 频带-B To generate the modulation voltage (V) CC ); Receive from the first RF band (RFB) A ) and the second RF band (RFB) B The first switch in the first RF band (RFB) A ) and the second RF band (RFB) B The second frequency band switching indication (24) in ) and Within the defined switching interval, from based on the first RF band (RFB) A ) and the second RF band (RFB) B The first predefined first parameter set (P) in ) 频带-A ) and the second parameter set (P 频带-B One of the generated modulation voltages (V) CC Switching to a frequency band based on the first RF band (RFB) A ) and the second RF band (RFB) B The second predefined first parameter set (P) in ) 频带-A ) and the second parameter set (P 频带-B Another of the generated modulation voltages (V) CC ).

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