A CuMO x Target material, method of making the same and solar cell

Abstract

The application relates to the technical field of target material preparation, and provides a CuMO x Target material, a preparation method thereof and a solar cell. The method comprises the following steps: mixing Cu2O powder, M2O3 powder, CuH powder, an additive and a solvent through ball milling, then adding a binder to uniformly mix to obtain slurry; the additive is added in an amount less than 1% of the total mass of the Cu2O powder, the M2O3 powder and the CuH powder; the slurry is sprayed and granulated to obtain granulated powder; the granulated powder is pressed and formed, then subjected to a degreasing treatment to obtain a target material blank; the target material blank is subjected to a sintering treatment, then subjected to machining to obtain a CuMO x Target material. The preparation method introduces CuH powder to generate copper and hydrogen gas in the ball milling process, creates a weak reduction environment, prevents Cu2O from being oxidized into CuO, and facilitates the generation of pure CuMO x phase creation creates favorable conditions; copper forms a liquid phase sintering, accelerates material migration, and improves the density of the target material. The additive is introduced to optimize the reaction path in the sintering process and promote the generation of pure CuMO x phase.

Description

Technical Field

[0001] This application belongs to the field of target material preparation technology, and particularly relates to a CuMO... x Target materials and their preparation methods, and solar cells. Background Technology

[0002] Solar cells are photoelectric devices that directly convert sunlight into electrical energy based on the photovoltaic effect. Among various types of solar cells, perovskite solar cells (PSCs) have developed most rapidly, with laboratory single-cell devices achieving efficiencies as high as 25.7%, surpassing traditional thin-film cells such as CdTe and CuInGaSe, and comparable to traditional silicon-based solar cells. However, the stability of PSCs under high temperature, high humidity, and continuous illumination is still significantly lower than that of traditional solar cells, which has become the biggest obstacle to their commercialization. Therefore, in order to overcome the photothermal instability of PSCs, it is necessary to develop and apply highly stable inorganic hole transport materials to effectively shield the perovskite light-absorbing layer from water and oxygen erosion, and prevent the formation of ion migration channels.

[0003] Currently, inorganic hole transport materials mainly include nickel oxide, copper oxide, and CuGaO2. Although nickel oxide and copper oxide have excellent stability, their intrinsic photoelectric properties are insufficient, resulting in less than ideal photoelectric performance. CuGaO2 combines excellent stability and photoelectric performance, making it a potential inorganic hole transport material. However, existing CuGaO2 hole transport materials are mainly prepared through chemical methods such as the sol-gel method and hydrothermal method, which have drawbacks such as high raw material costs, relatively complex processes, and poor uniformity of the resulting film.

[0004] Therefore, it is necessary to develop a CuMO x Target material, used for sputtering deposition to prepare CuMO x Hole transport material. Summary of the Invention

[0005] The purpose of this application is to provide a CuMO x The target material, its preparation method, and solar cells aim to solve the problems of high raw material cost, relatively complex process, and poor uniformity of the prepared CuGaO2 film.

[0006] To achieve the above-mentioned objectives, the technical solution adopted in this application is as follows:

[0007] Firstly, this application provides a CuMO x The method for preparing the target material includes the following steps:

[0008] Cu2O powder, M2O3 powder, CuH powder, additives, and solvent are ball-milled and mixed, then a binder is added and mixed evenly to obtain a slurry; M is a Group 3 metal element and / or a transition metal element; the amount of additive added is less than 1% of the total mass of Cu2O powder, M2O3 powder, and CuH powder;

[0009] The slurry is spray-granulated to obtain granulated powder;

[0010] The granulated powder is pressed into shape and then degreased to obtain a target material blank;

[0011] The target blank is sintered and then machined to obtain CuMO. x Target material.

[0012] In the embodiments, the additive is selected from one or more of Sb2O3 powder, V2O5 powder, and MoO3 powder.

[0013] In the embodiment, the mass ratio of Cu2O powder, M2O3 powder and CuH powder is (31~52):(42~66):(3~6).

[0014] In this embodiment, the M element is selected from one or more of Al, Ga, In, and Cr.

[0015] In the embodiments, the particle size of the Cu2O powder and the M2O3 powder is 1~10μm.

[0016] In this embodiment, the particle size of the CuH powder is ≤3μm.

[0017] In one embodiment, before the step of sintering the target blank, the target blank is further coated with graphite paper.

[0018] In the embodiments, the particle size of the solid particles in the slurry is 0.3~0.6μm.

[0019] In this embodiment, the adhesive is selected from polyvinyl alcohol.

[0020] In the embodiments, the amount of binder added is 0.1-2% of the total mass of Cu2O powder, M2O3 powder and CuH powder.

[0021] In this embodiment, the degreasing treatment is performed in a vacuum atmosphere at a temperature of 250-350°C for 4-12 hours.

[0022] In this embodiment, the sintering process is carried out in an inert atmosphere, at a temperature of 1000-1250°C, for a duration of 6-72 hours.

[0023] In the embodiment, the CuMOx The relative density of the target material is ≥92%.

[0024] In the embodiment, the CuMO x The x-axis of the target material is 1.5~2.5. Preferably, it is CuMO. x The x-value of the target material is 1.5~2, and more preferably, CuMO. x The x-value of the target material is 2.

[0025] In the embodiments, the amount of the additive added is 200~1000ppm of the total mass of the Cu2O powder, the M2O3 powder, and the CuH powder.

[0026] Secondly, this application provides a CuMO x Target materials, including CuMO provided in this application x CuMO prepared by the target material preparation method x Target material.

[0027] Thirdly, this application provides a solar cell comprising a hole transport layer, wherein the hole transport layer is made of CuMO provided in this application. x The film is obtained by sputtering of the target material.

[0028] Compared with the prior art, this application has the following beneficial effects:

[0029] (1) The introduction of CuH powder during ball milling decomposes to produce copper and hydrogen. The hydrogen creates a weak reducing environment, effectively preventing Cu2O powder from oxidizing into CuO powder. This avoids complex phase reactions caused by the presence of CuO during sintering, thus facilitating the formation of pure CuMO. x The phase creates favorable conditions, thereby improving the uniformity of the target material's microstructure. Simultaneously, copper can form a liquid-phase sintering, accelerating mass migration and increasing the target material's density. Furthermore, the introduction of additives with specific compositions optimizes the reaction pathway and suppresses impurity phase formation during sintering, promoting the formation of pure CuMO. x Phase formation. Therefore, the synergistic effect of CuH powder and additives effectively ensures the purity of CuMO. x Phase formation is avoided to prevent the formation of impurity phases such as CuO, which could affect the photoelectric performance of the target coating.

[0030] (2) Before sintering the target blank, the target blank is wrapped with graphite paper. During the sintering process, the graphite paper further creates a weak reducing environment, which prevents Cu2O from being oxidized to CuO and helps to purify CuMO. x The formation of the phase further improves the uniformity of the target material structure.

[0031] (3) The preparation process of this application is simple and easy to operate, requiring no complex and cumbersome steps or high-end and expensive equipment, effectively reducing production difficulty and cost. Simultaneously, CuMO is prepared...x The target material has high density and good microstructure uniformity, which can significantly improve the coating quality and photoelectric performance of the target material. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 The CuMO provided in the embodiments of this application x Process flow diagram of the target material preparation method;

[0034] Figure 2 The CuAlO provided in Embodiment 1 of this application x CuAlO prepared by the target material preparation method x XRD pattern of the target material;

[0035] Figure 3 The CuAlO provided in Comparative Example 2 of this application x CuAlO prepared by the target material preparation method x XRD pattern of the target material;

[0036] Figure 4 The CuAlO provided in Comparative Example 4 of this application x CuAlO prepared by the target material preparation method x XRD pattern of the target material. Detailed Implementation

[0037] To make the technical problems, technical solutions, and beneficial effects of this application clearer, the following detailed description is provided in conjunction with embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0038] The first aspect of the embodiments of this application provides a CuMO x Methods for preparing target materials, such as Figure 1 As shown, it includes the following steps:

[0039] S01: Cu2O powder, M2O3 powder, CuH powder, additives, and solvent are ball-milled and mixed, then a binder is added and mixed evenly to obtain a slurry; M is a Group 3 metal element and / or a transition metal element; the amount of additive added is less than 1% of the total mass of Cu2O powder, M2O3 powder, and CuH powder;

[0040] S02: Spray granulation of slurry to obtain granulated powder;

[0041] S03: The granulated powder is pressed into shape and then degreased to obtain the target material blank;

[0042] S04: The target blank is sintered and then machined to obtain CuMO. x Target material.

[0043] The CuMO provided in the embodiments of this application x The target preparation method involves introducing CuH powder during ball milling to decompose and generate copper and hydrogen gas. The hydrogen gas creates a weakly reducing environment, effectively preventing the oxidation of Cu2O powder into CuO powder. This avoids complex phase reactions caused by the presence of CuO during sintering, thus ensuring the formation of pure CuMO. x The phase creates favorable conditions, thereby improving the uniformity of the target material's microstructure. Simultaneously, copper can form a liquid-phase sintering, accelerating mass migration and increasing the target material's density. Introducing additives containing specific components optimizes the reaction pathway and suppresses impurity phase formation during sintering, promoting CuMO... x The main crystalline phase is formed. Therefore, the synergistic effect of CuH powder and additives effectively ensures the formation of pure CuMO. x Phase formation is prevented, avoiding the formation of impurity phases such as CuO that could affect the photoelectric performance of the target coating. Furthermore, before sintering the target blank, it is wrapped with graphite paper. During sintering, the graphite paper further creates a weakly reducing environment, preventing Cu2O from oxidizing to CuO and contributing to the purity of CuMO. x The formation of this phase further improves the uniformity of the target material's microstructure. Therefore, the preparation process described in this application is simple and easy to operate, requiring no complex or cumbersome steps or expensive high-end equipment, effectively reducing production difficulty and cost. Simultaneously, CuMO was prepared... x The target material has high density and good microstructure uniformity, which can significantly improve the coating quality and photoelectric performance of the target material.

[0044] In step S01 above, in this embodiment, the additive is selected from one or more of Sb₂O₃ powder, V₂O₅ powder, and MoO₃ powder. Introducing these additives, Sb 3+ and V 5+ It can preferentially occupy oxygen vacancies in the crystal lattice, reducing Cu + Adsorption of oxygen to generate Cu 2+ Thus stabilizing Cu + The valence state ensures pure CuMO x The formation of the CuMO phase effectively suppresses the formation of impurity phases such as CuO. MoO3 can regulate the oxygen partial pressure, optimize the solid-phase reaction pathway, and promote the formation of CuMO. x The phase preferentially forms, rather than other copper oxides. Therefore, the introduction of Sb₂O₃, V₂O₅, or MoO₃ in this embodiment effectively ensures the formation of pure CuMO. xThe target material is formed from the phase. Furthermore, these additives have low melting points and can form a liquid phase at sintering temperatures of 1000–1250 °C, filling grain boundaries, promoting particle migration and densification, and MoO3 may also form MoO4. 2- The complex strengthens the grain boundaries, effectively inhibits abnormal grain growth, and further improves the density of the target material.

[0045] In the embodiment, the mass ratio of Cu2O powder, M2O3 powder, and CuH powder is (31~52):(42~66):(3~6). This mass ratio range facilitates the sintering of Cu2O, M2O3, and CuH to form CuMO. 1.5~2.5 Especially CuMO 1.5~2.0 The CuMO produced x The target material has both excellent stability and photoelectric properties, and at the same time helps to reduce the interfacial transport barrier between the copper-based oxide hole transport layer and the perovskite layer, thereby improving the battery conversion efficiency.

[0046] In the embodiments, element M is selected from one or more of Al, Ga, In, and Cr.

[0047] In the examples, the particle size of Cu2O powder and M2O3 powder is 1~10μm.

[0048] In the examples, the particle size of CuH powder is ≤3μm.

[0049] In the embodiments, the particle size of the solid particles in the slurry is 0.3~0.6μm. Cu2O powder, M2O3 powder and CuH powder are ball-milled to this particle size range, which makes the powder have high sintering activity and more contact points between particles, which is conducive to sintering densification and improving the density of the target material.

[0050] In the embodiments, the adhesive is selected from polyvinyl alcohol.

[0051] In the embodiments, the amount of binder added is 0.1-2% of the total mass of Cu2O powder, M2O3 powder and CuH powder.

[0052] In a preferred embodiment, the amount of additive added is 200-1000 ppm of the total mass of Cu2O powder, M2O3 powder, and CuH powder. The amount of additive added in this embodiment helps Sb2O3, V2O5, and MoO3 dissolve in CuMO. x In the crystal lattice or at grain boundaries, avoid adding excessive amounts as independent phase precipitation, which could form non-target compounds and damage CuMO. x The purity and continuity of the main crystalline phase ensure the required CuMO. x Single-phase formation, avoiding damage to CuMO x The coating quality and photoelectric properties of the target material have a negative impact.

[0053] In step S02 of the above embodiment, the step of spray granulation of the slurry includes: sieving the slurry and then feeding it into a centrifugal granulator for centrifugal spray granulation to obtain granulated powder with a particle size of 45~125μm. The inlet temperature of the spray granulation is 180℃~250℃, and the outlet temperature is 80℃~110℃. The feed rate, inlet air pressure, and spraying speed are not specifically required and can be adjusted according to the properties of the granulated powder.

[0054] In the above-mentioned step S03, the step of pressing the granulated powder into shape includes: filling the granulated powder into a mold and then performing cold isostatic pressing; wherein the pressure of cold isostatic pressing is 200~300MPa, the holding time is 5~10min, and a green body with a relative density of 50~65% is obtained.

[0055] In the embodiments, the degreasing treatment is carried out in a vacuum atmosphere, at a temperature of 250~350°C, for a time of 4~12 hours.

[0056] In step S04 of the above embodiment, before the step of sintering the target blank, the target blank is further coated with graphite paper. Coating the target blank with graphite paper creates a weak reducing environment during the heating and sintering process, preventing Cu2O from oxidizing to CuO, ensuring the purity of Cu2O, thus avoiding complex phase reactions and facilitating CuMO. x Phase formation helps to improve the uniformity and density of the target material.

[0057] In this embodiment, the sintering process is carried out in an inert atmosphere at a temperature of 1000-1250°C for 6-72 hours. The inert atmosphere can be argon, nitrogen, or similar gases.

[0058] In the embodiment, CuMO x The relative density of the target material is ≥92%.

[0059] In the embodiment, CuMO x The x-value of the target material is 1.5 to 2.5; preferably, x is 1.5 to 2, and more preferably, x is 2.

[0060] A second aspect of the embodiments of this application provides a CuMO x Target materials, including CuMO provided in the embodiments of this application. x CuMO prepared by the target material preparation method x Target material.

[0061] The CuMO provided in the embodiments of this application x The target material is CuMO provided in the embodiments of this application. xThe target material is prepared by a specific method, resulting in high density and good uniformity. Furthermore, the target coating exhibits excellent stability and photoelectric properties, and its energy level structure can match that of the perovskite layer, thus helping to reduce the transport barrier between the hole transport layer and the perovskite layer interface.

[0062] A third aspect of this application provides a solar cell comprising a hole transport layer, wherein the hole transport layer is made of CuMO provided in the embodiments of this application. x The film is obtained by sputtering of the target material.

[0063] The solar cell provided in this application embodiment contains a hole transport layer made of CuMO provided in this application embodiment. x The target material is sputtered to form a film, which has good stability and photoelectric performance. The energy level structure can match the perovskite layer, so the transport barrier between the target material and the perovskite layer is low, resulting in high solar cell conversion efficiency.

[0064] The following description is based on specific embodiments.

[0065] Example 1

[0066] This embodiment provides a CuAlO x The method for preparing the target material includes the following steps:

[0067] S11: Weigh appropriate amounts of Cu2O powder (particle size D50 = 6.5 μm), Al2O3 powder (particle size D50 = 6.5 μm), and CuH powder (particle size D50 = 2.0 μm) according to a mass ratio of 38.8 / 56.7 / 4.5; and weigh an additive accounting for 1000 ppm of the total mass of Cu2O powder, Al2O3 powder, and CuH powder. This additive is composed of Sb2O3 powder, V2O5 powder, and MoO3 powder in a mass ratio of 1 / 1 / 1.

[0068] Cu2O powder, Al2O3 powder, CuH powder, additives and ethanol were ball-milled and mixed, then polyvinyl alcohol was added and mixed evenly, and the mixture was sieved to obtain a slurry; wherein the amount of polyvinyl alcohol added was 0.5% of the total mass of Cu2O powder, Al2O3 powder and CuH powder, and the particle size of the solid particles in the slurry was 0.5μm;

[0069] S12: The slurry is introduced into a centrifugal spray granulator, the inlet temperature is set to 220℃ and the outlet temperature is set to 100℃, and granulated powder with a particle size of 45~125μm is obtained.

[0070] S13: The granulated powder is filled into the mold and cold isostatically pressed to obtain a green body with a relative density of 60%; wherein the pressure of cold isostatic pressing is 250MPa and the holding time is 8min;

[0071] The green body is placed in a vacuum sintering furnace, and a vacuum of 100°C is applied. -3 After the temperature drops below Pa, the temperature is raised to 300℃ and held for 8 hours to obtain the target blank.

[0072] S14: Wrap the target blank around its perimeter with graphite paper, then place it in a vacuum sintering furnace and evacuate it to 10°C. -3 After the pressure drop below Pa, argon gas was introduced and the temperature was raised to 1100℃ and held for 36 hours. After cooling, machining was performed to obtain CuAlO. x Target material.

[0073] Example 2

[0074] This embodiment provides a CuAlO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0075] Step S11: The additive consists of Sb2O3 powder and MoO3 powder in a mass ratio of 1:1.

[0076] Example 3

[0077] This embodiment provides a CuAlO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0078] Step S14: The target blank is not wrapped with graphite paper; that is, the target blank is placed in a vacuum sintering furnace and evacuated to 10°C. -3 After the pressure drop below Pa, argon gas was introduced and the temperature was raised to 1100℃ and held for 36 hours. After cooling, machining was performed to obtain CuAlO. x Target material.

[0079] Example 4

[0080] This embodiment provides a CuInO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0081] Step S11: Use In2O3 powder to replace Al2O3 powder.

[0082] Comparative Example 1

[0083] This comparative example provides a CuAlO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0084] Step S11: No additives are added.

[0085] Comparative Example 2

[0086] This comparative example provides a CuAlO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0087] Step S11: Weigh out 2.5% of the additives, which constitute the total mass of Cu2O powder, Al2O3 powder, and CuH powder.

[0088] Comparative Example 3

[0089] This comparative example provides a CuAlO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0090] Step S11: Do not add CuH powder.

[0091] Comparative Example 4

[0092] This comparative example provides a CuAlO x The method for preparing the target material differs from that in Example 1 in the following ways:

[0093] In step S11, without adding any additives or CuH powder, an appropriate amount of Cu2O powder (D50=6.5μm) and Al2O3 powder (D50=6.5μm) are weighed according to the mass ratio of Cu2O powder to Al2O3 powder of 43.3 / 56.7.

[0094] Relevant performance test analysis:

[0095] 1. X-ray diffraction was used to analyze the CuAlO prepared in Example 1, Comparative Example 2, and Comparative Example 4. x Phase analysis of the target material was performed, and the measured XRD pattern is as follows: Figures 2-4 As shown.

[0096] from Figures 2-4 It can be seen that the CuAlO prepared in Example 1 x The target material's diffraction peaks are consistent with those of CuAlO2 (PDF card), with virtually no other impurity peaks, indicating that the target material prepared in Example 1 is a pure CuAlO2 phase. This is mainly due to the effective protection of Cu2O powder throughout the process in Example 1, achieved through the synergy of CuH powder and graphite paper, preventing Cu2O from oxidizing to CuO and creating favorable conditions for the formation of a pure CuAlO2 phase. Additives optimize the reaction pathway and suppress impurity phase formation during sintering. Ultimately, the synergy of these three factors promotes the formation of the CuAlO2 main crystalline phase.

[0097] CuAlO prepared in Comparative Example 2 x The target material's diffraction peaks, besides being mostly the same as those of CuAlO2 (PDF card), also showed a small number of impurity peaks, indicating that the target material prepared in Comparative Example 2 was mainly CuAlO2 phase, but also contained a small amount of impurity phases. The main reason for this is that the additives in Comparative Example 2 were added in excessive amounts, which damaged the phase purity of the CuAlO2 hole transport layer material and may have introduced impurity phases such as Sb2O3 and V2O5.

[0098] CuAlO prepared in Comparative Example 4 x The diffraction peaks of the target material showed a very high similarity to those of CuO (PDF card), indicating that Cu2O was oxidized to CuO during the preparation of Comparative Example 4, and the expected CuAlO2 phase was not formed. The main reasons are: firstly, the absence of CuH powder prevented the generation of hydrogen gas during ball milling to create a weak reducing environment, potentially leading to the oxidation of some Cu2O to CuO; secondly, the lack of specific additives prevented the optimization of the reaction pathway during sintering, hindering the transformation of Cu2O to the CuAlO2 phase and instead exacerbating the oxidation of Cu2O to CuO.

[0099] 2. The density of CuMO prepared in Examples 1-4 and Comparative Examples 1-4 was tested using the Archimedes density test. x The actual density of the target material is based on the theoretical density, so the relative density = actual density / theoretical density × 100%;

[0100] 3. Using a magnetron sputtering apparatus, the CuMO prepared in Examples 1-4 and Comparative Examples 1-4 were respectively sputtered. x Hole transport layers for perovskite solar cells were fabricated using target materials and then assembled into perovskite solar cells. The conversion efficiency of each perovskite solar cell was tested using a solar simulator with a light intensity of 100 mW / cm². 2 The battery area is 49cm² 2 ;

[0101] The test results are shown in Table 1 below:

[0102] Table 1

[0103]

[0104] As shown in Table 1, the relative densities of the targets prepared in Examples 1-4 are significantly higher than those in Comparative Examples 1, 3, and 4. This indicates that the addition of CuH powder in these examples allows the generated copper to form a liquid phase during sintering, accelerating material migration and increasing the density of the target. Adding additives with lower melting points, such as Sb₂O₃, V₂O₅, or MoO₃, also forms a liquid phase at the sintering temperature of these examples, filling grain boundaries, promoting particle migration, and further improving the density of the target.

[0105] The perovskite solar cell with the target material prepared in Example 1 has a significantly higher efficiency than Comparative Examples 1 and 3. This is mainly due to the CuH powder and graphite paper introduced in this application, which effectively protect the Cu2O powder throughout the process, preventing Cu2O from oxidizing to CuO and creating favorable conditions for the formation of pure CuAlO2 phase. The introduction of additives optimizes the reaction path and inhibits the formation of impurity phases during sintering. Ultimately, the synergistic effect of these three factors promotes the formation of pure CuAlO2 phase and a highly dense target material. Therefore, the hole transport layer prepared with the CuAlO2 target material has superior photoelectric performance and a lower interfacial transport barrier with the perovskite layer, resulting in higher cell conversion efficiency.

[0106] The efficiency of the perovskite solar cell corresponding to the target material prepared in Comparative Example 2 was significantly lower than that in Example 1. The main reason is that the additives in Comparative Example 2 were added in excess, which destroyed the phase purity of the CuAlO2 hole transport layer material and introduced impurity phases such as Sb2O3 and V2O5, thereby degrading the conductivity of the hole transport layer and the quality of the thin film, ultimately leading to a decrease in the conversion efficiency of the solar cell prepared based on this target material.

[0107] The perovskite solar cell corresponding to the target material prepared in Comparative Example 4 has no efficiency. The main reason is that CuH powder and additives were not added to Comparative Example 4, resulting in low target density, many micro-defects, and the inability to form pure phase CuAlO2. This leads to poor quality of the hole transport layer prepared by sputtering, poor hole extraction and transport capabilities, loss of electron blocking ability, and ultimately, no conversion efficiency of the perovskite solar cell.

[0108] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A CuMO x The method for preparing the target material is characterized in that, Includes the following steps: Cu2O powder, M2O3 powder, CuH powder, additives and solvent are ball-milled and mixed, and then a binder is added and mixed evenly to obtain a slurry; the amount of additive added is less than 1% of the total mass of Cu2O powder, M2O3 powder and CuH powder and not zero. The slurry is spray-granulated to obtain granulated powder; The granulated powder is pressed into shape and then degreased to obtain a target material blank; The target blank is coated with graphite paper, then sintered, and finally machined to obtain CuMO. x Target material; The additive is selected from one or more of Sb2O3 powder, V2O5 powder, and MoO3 powder; The mass ratio of Cu2O powder, M2O3 powder, and CuH powder is (31~52):(42~66):(3~6); The M element is selected from one or more of Al, Ga, In, and Cr.

2. The preparation method according to claim 1, characterized in that, The particle size of the Cu2O powder and the M2O3 powder is 1~10μm.

3. The preparation method according to claim 1, characterized in that, The particle size of the CuH powder is ≤3μm.

4. The preparation method according to claim 1, characterized in that, The particle size of the solid particles in the slurry is 0.3~0.6μm.

5. The preparation method according to claim 1, characterized in that, The adhesive is selected from polyvinyl alcohol; And / or, the amount of the binder added is 0.1 to 2% of the total mass of the Cu2O powder, M2O3 powder and CuH powder.

6. The preparation method according to any one of claims 1 to 5, characterized in that, The degreasing process is carried out in a vacuum atmosphere at a temperature of 250-350°C for 4-12 hours.

7. The preparation method according to any one of claims 1 to 5, characterized in that, The sintering process is carried out in an inert atmosphere at a temperature of 1000-1250°C for 6-72 hours.

8. The preparation method according to claim 7, characterized in that, The CuMO x The relative density of the target material is ≥92%; And / or, the CuMO x The x-value of the target material is 1.5~2.

5.

9. The preparation method according to claim 8, characterized in that, The CuMO x The x-value of the target material is 1.5~2.

10. The preparation method according to claim 8, characterized in that, The amount of the additive added is 200~1000 ppm of the total mass of the Cu2O powder, the M2O3 powder, and the CuH powder.

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