Method and device for measuring radio frequency voltage on high voltage electrode in radio frequency resonance system

Abstract

The application provides a method and device for measuring radio frequency voltage on a high-voltage electrode in a radio frequency resonance system. The method is applied to a radio frequency resonance system, and an induced ground electrode is placed in the radio frequency resonance system. The induced ground electrode contains an induced inner conductor. The method comprises the following steps: obtaining a first measured voltage peak-peak value of the radio frequency resonance system in a detuned state through a high-voltage probe; obtaining a first induced voltage peak-peak value of the radio frequency resonance system in the detuned state through the induced inner conductor; obtaining a second induced voltage peak-peak value of the radio frequency resonance system in a resonant state through the induced inner conductor; and determining a first radio frequency voltage single-peak value on the high-voltage electrode of the radio frequency resonance system in the resonant state based on the first measured voltage peak-peak value, the first induced voltage peak-peak value and the second induced voltage peak-peak value. The method can improve the measurement accuracy of the radio frequency high voltage on the high-voltage electrode in the radio frequency resonance system.

Description

Technical Field

[0001] This application relates to the field of voltage measurement technology, and in particular to a method and apparatus for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system. Background Technology

[0002] Taking high-energy ion implanters in the semiconductor equipment field as an example, a single unit comprises more than ten radio frequency (RF) acceleration units, forming an ion linear accelerator. The principle is to generate RF high voltage on a semi-suspended high-voltage electrode using RF resonance technology. The ion beam is sequentially accelerated to a high-energy state through these high-voltage electrodes before entering the target chamber and being implanted into the wafer. Each RF acceleration unit is a complex RF resonance system. In cyclotrons, electrons or ions are also accelerated stepwise using RF high voltage. Therefore, RF high voltage is a crucial parameter in the entire accelerator. In semiconductor equipment, RF power is fed into a plasma chamber, generating RF high voltage on the capacitor plates. The amplitude of this high voltage significantly affects the plasma characteristics. Therefore, accurately measuring the RF high voltage on the high-voltage electrode in the RF resonance system is crucial for quality control in the semiconductor manufacturing process. Summary of the Invention

[0003] This application provides a method and apparatus for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system. This improves the accuracy of measuring the radio frequency high voltage on the high-voltage electrode in the radio frequency resonant system. The technical solution is as follows:

[0004] According to one aspect of this application, a method for measuring the radio frequency voltage on a high-voltage electrode in a radio frequency resonant system is provided. The method is applied to the radio frequency resonant system, which includes an inductive ground electrode containing an inductive inner conductor. The inductive inner conductor is used to sense the radio frequency voltage on the high-voltage electrode and generate an inductive signal. The method includes:

[0005] The first peak-to-peak value of the measured voltage is obtained by the high-voltage probe when the radio frequency resonant system is in a detuned state, wherein the high-voltage probe is connected to the high-voltage electrode in the detuned state.

[0006] The peak-to-peak value of the first induced voltage induced by the inner conductor is obtained when the radio frequency resonant system is in the off-harmonic state.

[0007] The peak-to-peak value of the second induced voltage obtained by the inductive inner conductor when the radio frequency resonant system is in the resonant state is obtained. The connection between the high voltage probe and the high voltage electrode is disconnected in the resonant state. The resonant frequency and operating frequency of the resonant state in the radio frequency resonant system are the same as the operating frequency of the off-harmonic state in the radio frequency resonant system. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency.

[0008] Based on the first measured voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, the first single peak value of the radio frequency voltage on the high-voltage electrode is determined when the radio frequency resonant system is in the resonant state.

[0009] According to another aspect of this application, a measuring device for radio frequency voltage on a high-voltage electrode in a radio frequency resonant system is provided. The device is applied to the radio frequency resonant system, which includes an inductive ground electrode containing an inductive inner conductor for sensing the radio frequency voltage on the high-voltage electrode and generating an inductive signal. The device comprises:

[0010] The first acquisition module is used to acquire the first peak-to-peak value of the measured voltage obtained by the high-voltage probe when the radio frequency resonant system is in a detuned state, wherein the high-voltage probe is connected to the high-voltage electrode in the detuned state.

[0011] The second acquisition module is used to acquire the peak-to-peak value of the first induced voltage induced by the inductive inner conductor when the radio frequency resonant system is in the biased state.

[0012] The third acquisition module is used to acquire the peak-to-peak value of the second induced voltage obtained by the inductive inner conductor when the radio frequency resonant system is in a resonant state. In the resonant state, the connection between the high voltage probe and the high voltage electrode is disconnected. The resonant frequency and operating frequency of the resonant state in the radio frequency resonant system are the same as the operating frequency of the off-harmonic state in the radio frequency resonant system. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency.

[0013] The first determining module is used to determine, based on the first measured voltage peak value, the first induced voltage peak value, and the second induced voltage peak value, the first RF voltage single peak value on the high voltage electrode when the RF resonant system is in the resonant state.

[0014] According to one aspect of this application, a radio frequency voltage measurement device is provided, comprising: a processor and a memory storing a program, the program including instructions that, when executed by the processor, cause the processor to perform a method for measuring the radio frequency voltage on a high-voltage electrode in a radio frequency resonant system as described above.

[0015] According to another aspect of this application, a non-transitory computer-readable storage medium is provided that stores computer instructions for causing the computer to perform the method for measuring the radio frequency voltage on the high-voltage electrode in the radio frequency resonant system as described above.

[0016] According to another aspect of this application, a computer program product is provided, comprising computer instructions stored in a computer-readable storage medium. A processor of an RF voltage measurement device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the method for measuring the RF voltage on the high-voltage electrode in the RF resonant system described above.

[0017] The beneficial effects of the technical solutions provided in this application include at least the following:

[0018] By placing an inductive ground electrode in the radio frequency (RF) resonant system, which includes an inductive inner conductor, the RF voltage on the high-voltage electrode is sensed and a induced signal is generated. This allows for the determination of the proportional relationship between the voltage on the high-voltage electrode and the voltage on the inductive inner conductor at the operating frequency by acquiring the peak-to-peak value of the first measured voltage obtained through the high-voltage probe when the RF resonant system is in a de-tuned state, and the peak-to-peak value of the first induced voltage obtained through the inductive inner conductor. Furthermore, by acquiring the peak-to-peak value of the second induced voltage obtained through the inductive inner conductor when the RF resonant system is in a resonant state, the single peak value of the RF voltage on the high-voltage electrode in the resonant state can be determined based on the proportional relationship and the second induced voltage peak-to-peak value. This achieves the goal of measuring the RF voltage on the high-voltage electrode in the RF resonant system without affecting the operating frequency of the RF resonant system, ensuring that the measured RF voltage is the voltage of the RF resonant system in the resonant state, and improving the measurement accuracy of the RF voltage on the high-voltage electrode in the RF resonant system. Attached Figure Description

[0019] Further details, features, and advantages of this application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0020] Figure 1 This is a schematic diagram of a series resonant radio frequency system.

[0021] Figure 2 A flowchart is shown for a method of measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an exemplary embodiment of this application;

[0022] Figure 3 This is a schematic diagram of the structure of the inductive ground electrode;

[0023] Figure 4 This is a schematic diagram of the three-dimensional structure of the inductive ground electrode;

[0024] Figure 5 This is a schematic diagram of the structure of a radio frequency resonant system with an inductive ground electrode provided in an exemplary embodiment of this application;

[0025] Figure 6This is a schematic diagram of the voltage ratio between the high-voltage electrode and the inductive ground electrode in an exemplary embodiment of the present application for testing the radio frequency resonant system under off-harmonic state;

[0026] Figure 7 A flowchart is shown of another method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an exemplary embodiment of this application;

[0027] Figure 8 This is a schematic diagram of a high-voltage probe calibration process provided in an exemplary embodiment of this application;

[0028] Figure 9 This is a schematic diagram of a voltage calibration curve provided in an exemplary embodiment of this application;

[0029] Figure 10 A flowchart is shown of another method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an exemplary embodiment of this application;

[0030] Figure 11 This is a schematic diagram of the structure of a device for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system, provided in an embodiment of this application.

[0031] Figure 12 A computer processing block diagram is shown that can be used to implement an exemplary radio frequency voltage measurement device according to embodiments of this application. Detailed Implementation

[0032] Embodiments of this application will now be described in more detail with reference to the accompanying drawings. While some embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of this application. It should be understood that the drawings and embodiments of this application are for illustrative purposes only and are not intended to limit the scope of protection of this application.

[0033] It should be understood that the steps described in the method embodiments of this application may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of this application is not limited in this respect.

[0034] The term "comprising" and its variations as used herein are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Definitions of other terms will be given in the following description. It should be noted that the concepts of "first", "second", etc., mentioned in this application are only used to distinguish different devices, modules, or units, and are not intended to limit the order of functions performed by these devices, modules, or units or their interdependencies. It should be noted that the modifications "a" and "a plurality" mentioned in this application are illustrative and not restrictive, and those skilled in the art should understand that unless explicitly indicated in the context, they should be understood as "one or more". The names of messages or information exchanged between multiple devices in the embodiments of this application are for illustrative purposes only and are not intended to limit the scope of these messages or information.

[0035] The present invention will now be described with reference to the accompanying drawings. The technical solutions provided by the embodiments of the present invention will be explained in detail through specific examples and application scenarios.

[0036] It should be noted that the embodiments of this application mainly measure the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system under a specific scenario. For example... Figure 1 As shown, this application aims to measure the single peak value of the sinusoidal voltage on the electrode below the coil (L) in a similar resonant system under operating conditions, which is the single peak value of the voltage across the equivalent capacitance (C). Such resonant systems are often complex cavity structures covered with a large area of ​​metal ground (R). When they operate in resonant state, the bandwidth around the resonant frequency is very narrow, that is, the Q value is very high. An external radio frequency power source feeds high power at a certain resonant frequency, generating a very high amplitude sinusoidal high voltage (on the order of 100kV) on the high voltage electrode. The voltage value of this sinusoidal high voltage is very sensitive to changes in the critical dimensions of the internal structure (such as the capacitor region).

[0037] In general scenarios, the methods for testing radio frequency high voltage are shown in the table below:

[0038]

[0039] As shown in the table above, although there are many methods for measuring high-voltage radio frequency (RF) signals, they are not applicable to the specific scenarios mentioned above. The capacitive voltage divider and resistive voltage divider methods require a cable to be connected to the high-voltage electrode under test. However, as mentioned earlier and extensive practical experience shows, even if a thin metal wire is placed near or connected to the high-voltage electrode, the resonant frequency immediately deviates from the output frequency of the RF power source, the resonant state disappears instantly, and the measured voltage is not the RF voltage at the high-voltage electrode during operation. While the electric field probe method, electro-optic effect method, and Roche coil method eliminate the need for wiring, they require placing sensors or coils nearby or even directly on the high-voltage electrode. Even if they do not affect the resonant frequency, RF resonant systems often operate at high power, and the high-voltage electrode is an energy concentration area. The RF power heats nearby objects, even causing temperatures to rise to several hundred degrees Celsius, which these sensors cannot operate at. Even if these sensors can avoid the temperature rise problem and still measure signals, the signals are related to their placement location. Without clearly understanding this correlation, accurate measurement results cannot be obtained.

[0040] To address the problems existing in related technologies when applying radio frequency high voltage measurement methods to the specific scenario of measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system, this application provides an inductive ground electrode. By directly facing the high-voltage electrode in the radio frequency resonant system, the inductive ground electrode does not affect the radio frequency resonant frequency. Furthermore, the inductive inner conductor (sensing part) of the inductive ground electrode is hidden in a metal shield, preventing the temperature from rising to a level that threatens the inductive inner conductor. Through a series of calibration processes and test data of the inductive inner conductor, the peak radio frequency voltage on the semi-suspended electrode (high-voltage electrode) of interest in this application can be obtained. Please refer to... Figure 2 , Figure 2 A flowchart illustrating a method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an exemplary embodiment of this application is shown. The method is explained using an example of its application in a radio frequency resonant system. Figure 2 As shown, the method includes:

[0041] Step 210: Obtain the first peak-to-peak value of the measured voltage through the high-voltage probe when the RF resonant system is in a biased state. In the biased state, the high-voltage probe is connected to the high-voltage electrode.

[0042] Step 220: Obtain the peak-to-peak value of the first induced voltage induced by the inner conductor when the radio frequency resonant system is in a biased state.

[0043] Step 230: Obtain the peak-to-peak value of the second induced voltage obtained by the induction of the inner conductor when the radio frequency resonant system is in the resonant state. Disconnect the high voltage probe from the high voltage electrode when the system is in the resonant state. The resonant frequency and operating frequency of the resonant state in the radio frequency resonant system are the same as the operating frequency of the off-harmonic state in the radio frequency resonant system. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency.

[0044] Step 240: Based on the first measured voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, determine the first single peak value of the radio frequency voltage on the high-voltage electrode when the radio frequency resonant system is in the resonant state.

[0045] In order to measure the radio frequency voltage of the high-voltage electrode in a radio frequency resonant system under operating conditions, this application provides an inductive ground electrode, which is as follows: Figure 3 The diagram shows 10 components, where 101 is a replacement ground electrode identical to the ground electrode in the RF resonant system, 102 is the inductive inner conductor, 103 is the vacuum-sealed coaxial liner, 104 is the vacuum-sealed rubber ring, and 105 is the coaxial interface, such as a BNC (Bayonet Nut Connector). The diameter D of the inductive ground electrode follows the original structural dimensions of the ground electrode in the RF resonant system. However, for electromagnetic fields in the RF band, diameter D is a circular waveguide with strong cutoff capability. For example, RF power at a frequency of 13.56MHz propagating in such a circular waveguide will attenuate rapidly in an exponential manner, resulting in almost all of it being reflected back. The height of the inductive inner conductor 102 is adjusted so that it can sense a signal that is neither too strong nor too weak. The sensing signal is neither too strong nor too weak. Since the sensing inner conductor 102 needs to operate at full power in the radio frequency resonant system, if the sensing signal is too strong, it will exceed the oscilloscope's test range and may also burn out the vacuum-sealed coaxial liner. If the sensing signal is too weak, it will be easily affected by noise during measurement, resulting in a large error in the subsequent calibration process. Figure 4 This is a schematic diagram of the three-dimensional structure of the inductive ground electrode.

[0046] In one possible implementation, an inductive ground electrode is placed in the radio frequency (RF) resonant system to sense the RF voltage on the high-voltage electrode and generate an inductive signal. It should be noted that when the inductive ground electrode is placed in the RF resonant system, it replaces the original ground electrode (the ground electrode near the high-voltage electrode). Therefore, the position of the inductive ground electrode is the same as the replaced ground electrode, allowing the inductive inner conductor to be directly opposite the high-voltage electrode under test (or the inductive inner conductor can be located within the cutoff field region of the high-voltage electrode). Optionally, since the structure of the inductive ground electrode includes a replacement ground electrode 101 and an inductive inner conductor, the inductive ground electrode can play two roles in the RF resonant system: one is to perform the same function as the replaced ground electrode, and the other is to sense the RF voltage on the high-voltage electrode and generate an inductive signal for measuring the RF voltage on the high-voltage electrode. Furthermore, to avoid disrupting the operating environment of the RF resonant system itself, the outer contour dimensions of the inductive ground electrode need to be completely consistent with the replaced ground electrode, so that the RF resonant system can continue to carry the inductive ground electrode even when operating in a high-frequency resonant state.

[0047] Please refer to Figure 5 This is a schematic diagram of a radio frequency resonant system with an inductive ground electrode provided in an exemplary embodiment of this application. Figure 5 As shown, the inductive ground electrode is placed in the radio frequency resonant system. The outer contour dimensions of the ground electrode 100 in the radio frequency resonant system and the replacement ground electrode 101 in the inductive ground electrode are completely identical. 107 is the high-voltage electrode (or radio frequency high-voltage electrode), and all splicing and connection are made of metal. The high-voltage sine wave signal to be measured is on the high-voltage electrode 107. Typically, the radio frequency voltage on the high-voltage electrode 107 can reach 90kV. The inductive inner conductor 102 in the inductive ground electrode is used to induce a sine wave signal of appropriate amplitude. 108 is a vacuum chamber, which is evacuated to a high vacuum during operation. 106 is an oscilloscope. 1101 and 1102 are radio frequency narrowband pass filters. 111 is a BNC coaxial cable. It should be noted that... Figure 5 This is only one part of the RF high-voltage test platform. Other necessary components include: RF source, the rest of the RF resonant system, control system, vacuum exhaust system, water cooling system, etc., which are not closely related to this application. After placing this inductive ground electrode in the RF resonant system, the problem of measuring the RF high voltage on the semi-suspended high-voltage electrode can be transformed into the problem of measuring a small signal voltage on the semi-suspended low-voltage electrode (inductive inner conductor) and the problem of measuring the voltage ratio between the two semi-suspended electrodes (high-voltage electrode and inductive inner conductor).

[0048] The high-voltage electrode 107 is semi-suspended, and the inner inductor 102 is also semi-suspended. This allows the inner inductor 102 to function normally at the operating frequency of the RF resonant system without affecting its operation, while still inducing a suitable magnitude of signal. Furthermore, studies of electromagnetic laws show that the voltages across the passive spaces 102 and 107 have a linear relationship. Therefore, if the linear relationship between the voltages on the inner inductor and the high-voltage electrode can be clearly established, and given that the induced signal on the inner inductor can be directly measured using an oscilloscope, the RF voltage on the high-voltage electrode can be calculated based on this linear relationship and the measured magnitude of the induced signal.

[0049] To clarify the linear relationship between the voltage on the induced inner conductor and the high-voltage electrode, this embodiment determines the relationship by testing the proportional relationship between the voltage on the high-voltage electrode and the voltage induced by the induced ground electrode (induced inner conductor) in a detuned state of the radio frequency resonant system. Since the high-voltage probe is connected to the high-voltage electrode when testing the voltage on the high-voltage electrode, it inevitably causes the radio frequency resonant system to be in a detuned state. Therefore, what is measured is the proportional relationship between the two voltages in the detuned state. It should be noted that the detuned state or the resonant state does not affect the proportional relationship between the voltage on the high-voltage electrode and the voltage induced by the induced inner conductor.

[0050] Please refer to Figure 6 This is a schematic diagram illustrating the voltage ratio between the high-voltage electrode and the induced ground electrode in a test radio frequency resonant system under off-harmonic conditions, provided in an exemplary embodiment of this application. Figure 6As shown, one end of the high-voltage probe 109 is directly connected to a suitable position on the high-voltage electrode 107, and the other end is connected to the oscilloscope through a filter. The RF resonant system is still fed with power P1 at its original operating frequency f0. Since the high-voltage probe inevitably causes the RF resonant system to be in a detuned state, the RF voltage on the high-voltage electrode 107 is significantly reduced. Therefore, the RF power source fed into the RF resonant system in the detuned state does not need to be the normal operating power. Typically, it can be tested at one-tenth of the normal operating power. That is to say, the power P1 fed into the RF resonant system in the detuned state can be one-tenth of the normal operating power P0 fed into the RF resonant system in the resonant state. Moreover, the high-voltage probe exhibits high impedance, low inductance, and low capacitance to minimize its impact on the RF resonant system. However, even so, the detuning of the RF resonant system is caused by the high-voltage probe. The upper limit of the voltage that the high-voltage probe can measure does not need to be very high, such as 5kV (if too high a voltage is measured, the high-voltage probe 109 is easily burned out in this special RF environment). The high-voltage probe is required to have a very high input impedance, such as 100MΩ. Furthermore, the connection position between the high-voltage probe 109 and the high-voltage electrode 107 also requires special configuration. The connection position needs to be far away from the cutoff field region where the inner conductor 102 is located. This way, although the resonant characteristics of the RF resonant system have deviated (but not by much due to the high impedance of the high-voltage probe), the electromagnetic field structure between the high-voltage electrode 107 and the inner conductor 102 at the operating frequency f0 is almost identical to that in the resonant state. Even if the introduction of the high-voltage probe 109 causes detuning, it will not affect the voltage ratio between the two (the voltage ratio between the high-voltage electrode 107 and the inner conductor 102 will not differ due to variations in the voltage on the high-voltage electrode 107). 1101 and 1102 are bandpass filters with a center frequency of f0. Their function is to reduce signal distortion, ensuring that the signal reaching the oscilloscope is always a standard sine wave, thus reducing measurement errors in this regard. It should be noted that during RF voltage measurement, the bandpass filter following the high-voltage probe 109 should always follow 109, and the bandpass filter following the inner conductor 102 should always follow 102. They should not be interchanged to avoid measurement errors caused by differences between the bandpass filters.

[0051] Based on the above-described method for measuring the RF voltage on the high-voltage electrode in an RF resonant system, the method for measuring the RF voltage on the high-voltage electrode in an RF resonant system proposed in this application is applied to an RF resonant system with an inductive ground electrode. After the inductive ground electrode is placed, the RF voltage measurement process includes the following stages: Stage 1: Connect the high-voltage probe to the high-voltage electrode (i.e., connect the high-voltage probe to the high-voltage electrode), feed power P1 into the RF resonant system to obtain the first peak-to-peak value of the measured voltage on the high-voltage electrode obtained by the high-voltage probe when the RF resonant system is in a detuned state. At the same time, the inductive inner conductor generates an inductive signal by sensing the RF voltage on the high-voltage electrode. This inductive signal can also be measured on an oscilloscope after passing through a bandpass filter to obtain the first peak-to-peak value of the induced voltage sensed by the inductive inner conductor when the RF resonant system is in a detuned state.

[0052] Phase 2: Remove the high-voltage probe (i.e., disconnect the connection between the high-voltage probe and the high-voltage electrode), and feed power P0 into the RF resonant system to make the RF resonant system operate in the resonant state. This allows us to obtain the peak-to-peak value of the second induced voltage induced through the inner conductor when the RF resonant system is in the resonant state. Considering that the ratio of the voltage on the high-voltage probe to the voltage on the inner conductor differs at different frequencies in the RF resonant system, the operating frequency of the RF resonant system in the off-harmonic state and the resonant state must be the same, for example, f0 in both.

[0053] Stage 3: Knowing the peak-to-peak value of the first measured voltage on the high-voltage electrode and the peak-to-peak value of the first induced voltage induced in the inner conductor under the known off-harmonic state, i.e., the proportional relationship between the voltages on the high-voltage electrode and the inner conductor can be determined. Then, after obtaining the peak-to-peak value of the second induced voltage induced in the inner conductor under the resonant state, the radio frequency (RF) voltage on the high-voltage electrode can be calculated based on the proportional relationship (determined by the peak-to-peak values ​​of the first measured voltage and the first induced voltage) and the second induced voltage. In other words, the single peak value of the first RF voltage on the high-voltage electrode under the resonant state of the RF resonant system can be determined based on the peak-to-peak values ​​of the first measured voltage, the first induced voltage, and the second induced voltage. The single peak value of the RF voltage is half the peak-to-peak value of the voltage.

[0054] It should be noted that since there is a certain proportional relationship between the peak-to-peak value of the measured voltage obtained by the high-voltage probe and the actual peak-to-peak value of the voltage on the high-voltage electrode, and even the relationship is not linear with the increase of voltage, this relationship needs to be introduced when calculating the radio frequency voltage on the high-voltage electrode.

[0055] In summary, this application provides a method for measuring the radio frequency (RF) voltage on the high-voltage electrode in an RF resonant system: by placing an inductive ground electrode in the RF resonant system, which includes an inductive inner conductor, the inductive inner conductor can sense the RF voltage on the high-voltage electrode and generate an induced signal. This allows for the determination of the proportional relationship between the voltage on the high-voltage electrode and the voltage on the inductive inner conductor at the operating frequency by acquiring the first peak-to-peak value of the measured voltage obtained by the high-voltage probe when the RF resonant system is in a detuned state, and the first peak-to-peak value of the induced voltage obtained by the inductive inner conductor. Furthermore, by acquiring the second peak-to-peak value of the induced voltage obtained by the inductive inner conductor when the RF resonant system is in a resonant state, the single peak value of the RF voltage on the high-voltage electrode in the resonant state of the RF resonant system can be determined based on the proportional relationship and the second peak-to-peak value of the induced voltage. This achieves the purpose of measuring the RF voltage on the high-voltage electrode in the RF resonant system, and the measurement process does not affect the operating frequency of the RF resonant system, ensuring that the measured RF voltage is the voltage of the RF resonant system in the resonant state, thus improving the measurement accuracy of the RF voltage on the high-voltage electrode in the RF resonant system.

[0056] Although the high-voltage probe itself indicates the ratio between the measured voltage and the actual voltage, research has found that this ratio may be inaccurate, and may even be non-linear with increasing voltage. To avoid this error affecting the accuracy of RF voltage measurements, the embodiments of this application also calibrate the voltage ratio of the high-voltage probe. Please refer to... Figure 7 , Figure 7 A flowchart illustrating another method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an exemplary embodiment of this application is shown. The method is explained using an example of its application in a radio frequency resonant system. Figure 7 As shown, the method includes:

[0057] Step 701: Obtain the first peak-to-peak value of the measured voltage obtained by the high-voltage probe when the radio frequency resonant system is in a biased state. In the biased state, the high-voltage probe is connected to the high-voltage electrode.

[0058] Step 702: Obtain the peak-to-peak value of the first induced voltage induced by the inner conductor when the radio frequency resonant system is in a biased state.

[0059] Step 703: Obtain the peak-to-peak value of the second induced voltage induced by the inner conductor when the RF resonant system is in the resonant state. Disconnect the high voltage probe from the high voltage electrode when the RF resonant system is in the resonant state. The resonant frequency and operating frequency of the RF resonant system in the resonant state are the same as the operating frequency of the RF resonant system in the off-harmonic state. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency.

[0060] Step 704: Obtain the voltage calibration curve of the high-voltage probe. The voltage calibration curve is used to indicate the fitting relationship between the voltage measured by the high-voltage probe and the actual voltage.

[0061] After obtaining the peak-to-peak value of the first measured voltage measured by the high-voltage probe under resonant conditions and the peak-to-peak value of the first induced voltage induced by the inner conductor, in order to clarify the proportional relationship between the voltage on the high-voltage electrode and the voltage on the inner conductor, it is necessary to obtain the actual peak-to-peak value of the voltage on the high-voltage electrode. Due to the measurement principle of the high-voltage probe, there is a specific relationship between the peak-to-peak value of the first measured voltage measured by the high-voltage probe and the actual peak-to-peak value of the voltage on the high-voltage electrode. Therefore, it is necessary to obtain the fitting relationship curve between the voltage measured by the high-voltage probe and the actual voltage, i.e., the voltage calibration curve, so as to determine the actual peak-to-peak value of the high-voltage probe based on the voltage calibration curve and the peak-to-peak value of the first measured voltage.

[0062] In one possible implementation, the process of determining the voltage calibration curve may include steps 704A to 704D.

[0063] Step 704A: Obtain the impedance value of the standard power load at the resonant frequency measured by the vector network analyzer, and the RF power read from the RF power source.

[0064] Step 704B: Determine the theoretical peak-to-peak voltage based on the impedance value and RF power.

[0065] Step 704C: Obtain multiple sets of theoretical voltage peak-to-peak values ​​and the second measured voltage peak-to-peak value measured by the high-voltage probe under the theoretical voltage peak-to-peak value.

[0066] Step 704D: Based on multiple sets of theoretical voltage peak-to-peak values ​​and second measured voltage peak-to-peak values, the voltage calibration curve of the high-voltage probe is obtained by fitting.

[0067] Please refer to Figure 8 This is a schematic diagram of a high-voltage probe calibration process provided in an exemplary embodiment of this application. Figure 8As shown, 109 is a high-voltage probe, 1101 is a filter, 106 is an oscilloscope, 202 is an RF cable, and 203 is an RF coaxial tee. The high-voltage probe 109 monitors the sinusoidal voltage waveform flowing from the RF power source 201 to the standard power load 204 via the RF coaxial tee. Since the high-voltage probe 109 itself exhibits high impedance, low inductance, and low capacitance, its impact on the main circuit is negligible. The reason for requiring a standard power load (generally around 50Ω) is that, in microwave theory, the electromagnetic wave on the RF cable 202 under matched conditions is essentially a traveling wave, without the peaks and troughs of a standing wave. Therefore, accurate voltage amplitude can be measured at any location, regardless of the monitoring position. At this point, the reflected power on the RF power source 201 is approximately zero, reducing the error in calculating the theoretical voltage. The RF operating frequency is always set to f0, specifically for determining the accuracy of the high-voltage probe at this operating frequency.

[0068] Optionally, to eliminate the reverse effect of the RF resonant system on the high-voltage probe, the high-voltage probe calibration should be performed by... Figure 8 The third branch access of the RF coaxial tee 203 Figure 6 The entire structure (from) Figure 6 The center electrode at the top of the structure shown is directly connected (excluding other parts of the complete RF resonant system not shown), and then tested through the high-voltage probe 109, completely simulating a real-world scenario to calibrate the high-voltage probe 109. A simplified approach is to follow... Figure 8 The method of calibration is related to the susceptibility of the high-voltage probe 109, which will bring some unavoidable errors. Therefore, in applications with strict requirements, a stricter version should be used to calibrate the high-voltage probe 109.

[0069] In such Figure 8 After the calibration structure of the high-voltage probe is completed, the impedance value of the standard power load at the resonant frequency is measured by a vector network analyzer, and the radio frequency power is read from the radio frequency power source. Based on the radio frequency power and impedance value, the current theoretical voltage peak-to-peak value is calculated, and then the second measured voltage peak-to-peak value is obtained by measuring the high-voltage probe at the theoretical voltage peak-to-peak value. By changing the input radio frequency power, multiple sets of theoretical voltage peak-to-peak values ​​and their corresponding second measured voltage peak-to-peak values ​​can be obtained. Then, based on the multiple sets of theoretical voltage peak-to-peak values ​​and the second measured voltage peak-to-peak values, the voltage calibration curve of the high-voltage probe is fitted.

[0070] Alternatively, when fitting the voltage calibration curve, a quadratic polynomial fitting method can be used, and the formula for the fitted voltage calibration curve can be: a, b, and c are the fitted coefficients; x represents the peak-to-peak value (V) of the sinusoidal signal measured on the oscilloscope using the high-voltage probe (with a bandpass filter) (measuring voltage peak-to-peak value); y represents the impedance R and power P at the standard load port. in The theoretical voltage peak-to-peak value (V) calculated directly from the RF power source. .

[0071] Please refer to Figure 9 , Figure 9 This is a schematic diagram of a voltage calibration curve provided in an exemplary embodiment of this application. The horizontal axis x represents the peak-to-peak value of the measured voltage measured by the high-voltage probe, and the vertical axis y represents the actual peak-to-peak value of the voltage. Figure 9 As can be seen, the voltage measured by the high-voltage probe does deviate slightly from the actual voltage, so the proportional coefficient of the high-voltage probe can only be used as a reference.

[0072] Step 705: Based on the voltage calibration curve and the first measured voltage peak-to-peak value, determine the actual voltage peak-to-peak value on the high-voltage electrode when the RF resonant system is in a biased state.

[0073] After obtaining the voltage calibration curve of the high-voltage probe, the peak-to-peak value of the first measured voltage obtained by the high-voltage probe under the biased state is substituted into the voltage calibration curve to obtain the actual peak-to-peak value of the voltage on the high-voltage electrode of the radio frequency resonant system under the biased state.

[0074] Step 706: Based on the actual voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, determine the first single peak value of the radio frequency voltage on the high-voltage electrode when the radio frequency resonant system is in the resonant state.

[0075] The formula for calculating the single peak value of the first radio frequency voltage can be shown in formula (1):

[0076] V0=V 感应P0谐振 / V 感应P1偏谐 ×y(V 电极P1偏谐 ) / 2000(1)

[0077] Where V0 represents the single peak value of the first radio frequency voltage, V 感应P0谐振 V represents the peak-to-peak value of the second induced voltage. 感应P1偏谐 y (V) represents the peak-to-peak value of the first induced voltage. 电极P1偏谐 () indicates the actual peak-to-peak value corresponding to the first measured voltage peak-to-peak value.

[0078] It should be noted that there will be an error between the displayed power and the actual power of the RF power source. As can be seen from formula (1), the same RF power source is used twice during the calibration process, and any proportional error will be automatically eliminated. For example, suppose this RF power source Pin 实际 =t*Pin 显示 Since t is constant with power, to obtain the voltage of the high-voltage electrode at resonance when P0 = 3000 (W) is fed in, the actual feed is t * 3000 (W). In the calculation of V0, the off-harmonic power P1 = 300 (W): V 感应P0谐振 In reality, it is the voltage across the induced ground electrode (induced inner conductor) at t*3000 (W) resonance, V 感应P1偏谐 In reality, it is the voltage across the induced ground electrode (induced inner conductor) when t*300 (W) is detuned, y (V 电极P1偏谐 The actual voltage y is actually the voltage across the high-voltage electrode at a deflection of t*300 (W). The ratio between the second and third terms is normally linear and unrelated to power, but the formula is used when calculating the actual voltage y. Due to a series of P in Also read from this RF power source, the vertical axis of the entire curve should actually be multiplied by... Since the factors were not multiplied, the second and third terms are equivalent to being divided by . The factor, which is proportional to the square root of the voltage and power at any point in the RF system, should be divided by the first term. The factor was not divided by, so it is equivalent to multiplying by. Therefore, formula (1) completely eliminates the influence of the proportionality coefficient t.

[0079] In one possible implementation, after obtaining the actual peak-to-peak value of the high-voltage electrode in the off-harmonic state and the peak-to-peak value of the first induced voltage induced by the inner conductor, and the peak-to-peak value of the second induced voltage induced by the inner conductor in the resonant state, the actual peak-to-peak value, the peak-to-peak value of the first induced voltage, and the peak-to-peak value of the second induced voltage can be substituted into formula (1) to calculate the first single peak value of the high-voltage electrode in the resonant state. The unit of the first single peak value of the radio frequency voltage is kV.

[0080] In this embodiment, by calibrating the high-voltage probe, the actual peak-to-peak value of the high-voltage electrode under resonant state can be obtained more accurately, thereby improving the measurement accuracy of the radio frequency voltage on the high-voltage electrode.

[0081] Considering the different input power, the RF voltage on the high-voltage electrode also varies. The first RF voltage single-peak value is the RF voltage on the high-voltage electrode when the RF resonant system is fed with the first power. Since voltage and RF power are correlated, knowing the first power and the first RF voltage single-peak value, if it is necessary to measure the RF voltage on the high-voltage electrode under other input powers, there is no need to repeat the bias test. Please refer to... Figure 10 , Figure 10 A flowchart illustrating another method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an exemplary embodiment of this application is shown. The method is explained using an example of its application in a radio frequency resonant system. Figure 10 As shown, the method includes:

[0082] Step 1001: Obtain the first peak-to-peak value of the measured voltage obtained by the high-voltage probe when the radio frequency resonant system is in a biased state. In the biased state, the high-voltage probe is connected to the high-voltage electrode.

[0083] Step 1002: Obtain the peak-to-peak value of the first induced voltage induced by the inner conductor when the radio frequency resonant system is in a biased state.

[0084] Step 1003: Obtain the peak-to-peak value of the second induced voltage obtained by the induction of the inner conductor when the radio frequency resonant system is in the resonant state. Disconnect the high voltage probe from the high voltage electrode when the system is in the resonant state. The resonant frequency and operating frequency of the resonant state in the radio frequency resonant system are the same as the operating frequency of the off-harmonic state in the radio frequency resonant system. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency.

[0085] Step 1004: Based on the first measured voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, determine the first single peak value of the radio frequency voltage on the high-voltage electrode when the radio frequency resonant system is in the resonant state.

[0086] Step 1005: When feeding the second power into the radio frequency resonant system, based on the first radio frequency voltage single peak value, the first power and the second power, determine the second radio frequency voltage single peak value on the high voltage electrode when the radio frequency resonant system is in the resonant state and the second power is fed in.

[0087] Steps 1001 to 1004 yield the single peak value of the radio frequency voltage (first single peak value of radio frequency voltage) on the semi-suspended high-voltage electrode in the resonant state of the radio frequency resonant system. However, this first single peak value of radio frequency voltage is the radio frequency voltage on the high-voltage electrode when the first power is fed into the radio frequency resonant system in the resonant state, and the radio frequency voltage on the high-voltage electrode is different when different powers are fed in. The characteristics of the radio frequency resonant system indicate that, given the voltage V0 on the high-voltage electrode when power P0 is fed in, the voltage V on the high-voltage electrode when any power P is fed in can be derived.

[0088] The formula for calculating the single peak value of the second radio frequency voltage can be shown in formula (2):

[0089] (2)

[0090] in, This indicates the single peak value of the second radio frequency voltage. This indicates the single peak value of the first radio frequency voltage. Indicates the second power. This indicates the first power.

[0091] In one possible implementation, after calculating the first single-peak value of the RF voltage on the high-voltage electrode when feeding the first power into the RF resonant system, when feeding the second power into the RF resonant system, the first power, the second power, and the first single-peak value of the RF voltage can be substituted into formula (2) to calculate the second single-peak value of the RF voltage on the high-voltage electrode when the RF resonant system is in resonance state and the second power is fed in. Therefore, the RF resonant system only needs to measure the single-peak value of the RF voltage on the high-voltage electrode once through steps 1001 to 1004. With the resonant frequency unchanged, subsequent feeding of other powers can be directly substituted into formula (2) to calculate the single-peak value of the RF voltage, without having to repeat the off-tuning test and other operations.

[0092] In this embodiment, based on the relationship that the voltage at any point in the RF resonant system is proportional to the power square root, it is possible to measure the single peak value of the RF voltage of the high-voltage electrode once. When feeding in other RF power in the future, it is not necessary to perform repeated off-harmonic tests. The RF voltage can be directly calculated based on the proportional relationship, which improves the convenience of RF voltage measurement.

[0093] Please refer to Figure 11 This is a schematic diagram of a device for measuring the radio frequency voltage on a high-voltage electrode in a radio frequency resonant system, provided in an embodiment of this application. The device is applied to a radio frequency resonant system, which includes an inductive ground electrode containing an inductive inner conductor. The inductive inner conductor is used to sense the radio frequency voltage on the high-voltage electrode and generate an inductive signal. The device 1100 includes:

[0094] The first acquisition module 1111 is used to acquire the first measurement voltage peak value measured by the high voltage probe when the radio frequency resonant system is in a detuned state, wherein the high voltage probe is connected to the high voltage electrode in the detuned state.

[0095] The second acquisition module 1112 is used to acquire the peak-to-peak value of the first induced voltage induced by the inductive inner conductor when the radio frequency resonant system is in the biased state.

[0096] The third acquisition module 1113 is used to acquire the peak-to-peak value of the second induced voltage obtained by the inductive inner conductor when the radio frequency resonant system is in a resonant state. In the resonant state, the connection between the high voltage probe and the high voltage electrode is disconnected. The operating frequency of the radio frequency resonant system is the same in the resonant state and the de-resonant state.

[0097] The first determining module 1114 is used to determine, based on the first measured voltage peak value, the first induced voltage peak value and the second induced voltage peak value, the first RF voltage single peak value on the high voltage electrode when the RF resonant system is in the resonant state.

[0098] Optionally, the first determining module 1114 is further configured to:

[0099] Obtain the voltage calibration curve of the high-voltage probe, which is used to indicate the fitting relationship curve between the voltage measured by the high-voltage probe and the actual voltage;

[0100] Based on the voltage calibration curve and the first measured voltage peak-to-peak value, the actual voltage peak-to-peak value on the high-voltage electrode when the radio frequency resonant system is in the off-harmonic state is determined;

[0101] Based on the actual voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, the first RF voltage single peak value on the high-voltage electrode is determined when the RF resonant system is in the resonant state.

[0102] Optionally, the formula for calculating the single peak value of the first radio frequency voltage is:

[0103] V0=V 感应P0谐振 / V 感应P1偏谐 ×y(V 电极P1偏谐 ) / 2000

[0104] Where V0 represents the single peak value of the first radio frequency voltage, V 感应P0谐振 V represents the peak-to-peak value of the second induced voltage. 感应P1偏谐 y(V) represents the peak-to-peak value of the first induced voltage. 电极P1偏谐 () represents the actual peak-to-peak value corresponding to the first measured voltage peak-to-peak value.

[0105] Optionally, the first determining module 1114 is further configured to:

[0106] Obtain the impedance value of the standard power load at the resonant frequency measured by a vector network analyzer, and the RF power read from the RF power source;

[0107] Based on the impedance value and the radio frequency power, the theoretical peak-to-peak voltage is determined;

[0108] Obtain multiple sets of the theoretical voltage peak-to-peak value and the second measured voltage peak-to-peak value measured by the high-voltage probe under the theoretical voltage peak-to-peak value;

[0109] Based on multiple sets of theoretical voltage peak-to-peak values ​​and the second measured voltage peak-to-peak values, the voltage calibration curve of the high-voltage probe is obtained by fitting.

[0110] Optionally, the first single peak value of the radio frequency voltage is the radio frequency voltage on the high-voltage electrode when the first power is fed into the radio frequency resonant system in the resonant state, and the radio frequency voltage on the high-voltage electrode is different when different powers are fed in.

[0111] Optionally, the device further includes:

[0112] The second determining module is used to determine, based on the first single peak value of the radio frequency voltage, the first power, and the second power, the second peak value of the radio frequency voltage on the high-voltage electrode when the radio frequency resonant system is in the resonant state and the second power is fed into the radio frequency resonant system.

[0113] Optionally, the formula for calculating the single peak value of the second radio frequency voltage is:

[0114]

[0115] in, This indicates a single peak value of the second radio frequency voltage. This indicates a single peak value of the first radio frequency voltage. This indicates the second power. This represents the first power.

[0116] An exemplary embodiment of this application also provides a radio frequency voltage measurement device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program executable by the at least one processor, which, when executed by the at least one processor, causes the radio frequency voltage measurement device to perform a method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an embodiment of this application.

[0117] An exemplary embodiment of this application also provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a computer's processor, is used to cause the computer to perform a method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an embodiment of this application.

[0118] An exemplary embodiment of this application also provides a computer program product, including a computer program, wherein, when executed by a computer's processor, the computer program is used to cause the computer to perform a method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to an embodiment of this application.

[0119] refer to Figure 12 The following is a computer processing block diagram describing an exemplary radio frequency voltage measurement device of this application. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of this application described and / or claimed herein.

[0120] like Figure 12 As shown, the radio frequency voltage measurement device 1200 includes a computing unit 1201, which can perform various appropriate actions and processes according to a computer program stored in ROM 1202 or a computer program loaded into RAM 1203 from storage unit 1208. RAM 1203 can also store various programs and data required for the operation of the radio frequency voltage measurement device 1200. The computing unit 1201, ROM 1202, and RAM 1203 are interconnected via bus 1204. I / O interface 1205 is also connected to bus 1204.

[0121] Multiple components in the RF voltage measurement device 1200 are connected to the I / O interface 1205, including: an input unit 1206, an output unit 1207, a storage unit 1208, and a communication unit 1209. The input unit 1206 can be any type of device capable of inputting information to the RF voltage measurement device 1200. The input unit 1206 can receive input digital or character information and generate key signal inputs related to user settings and / or function control of the RF voltage measurement device. The output unit 1207 can be any type of device capable of presenting information and may include, but is not limited to, a display, speaker, video / audio output terminal, vibrator, and / or printer. The storage unit 1208 may include, but is not limited to, a hard disk or optical disk. The communication unit 1209 allows the RF voltage measurement device 1200 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks, and may include, but is not limited to, modems, network cards, infrared communication devices, wireless communication transceivers, and / or chipsets, such as Bluetooth devices, WiFi devices, WiMax devices, cellular communication devices, and / or the like.

[0122] The computing unit 1201 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 1201 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 1201 performs the various methods and processes described above. For example, in some embodiments, Figure 2 , Figure 7 and Figure 10 The method shown can be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as storage unit 1208. In some embodiments, part or all of the computer program may be loaded and / or installed on the radio frequency voltage measurement device 1200 via ROM 1202 and / or communication unit 1209. In some embodiments, computing unit 1201 may be configured to execute by any other suitable means (e.g., by means of firmware). Figure 2 , Figure 7 and Figure 10 The method shown.

[0123] The program code used to implement the methods of this application may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing device, such that when executed by the processor or controller, the functions / operations specified in the flowcharts and / or block diagrams are implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0124] In the context of this application, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0125] As used in this application, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, device, and / or apparatus (e.g., disk, optical disk, memory, programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including machine-readable media that receive machine instructions as machine-readable signals. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0126] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0127] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0128] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other.

Claims

1. A method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system, characterized in that, The method is applied to a radio frequency (RF) resonant system, wherein an inductive ground electrode is placed in the RF resonant system, and the inductive ground electrode contains an inductive inner conductor, which is used to sense the RF voltage on the high-voltage electrode and generate an inductive signal. The method includes: The first peak-to-peak value of the measured voltage is obtained by the high-voltage probe when the radio frequency resonant system is in a detuned state, wherein the high-voltage probe is connected to the high-voltage electrode in the detuned state. The peak-to-peak value of the first induced voltage induced by the inner conductor is obtained when the radio frequency resonant system is in the off-harmonic state. The peak-to-peak value of the second induced voltage obtained by the inductive inner conductor when the radio frequency resonant system is in the resonant state is obtained. The connection between the high voltage probe and the high voltage electrode is disconnected in the resonant state. The resonant frequency and operating frequency of the resonant state in the radio frequency resonant system are the same as the operating frequency of the off-harmonic state in the radio frequency resonant system. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency. Based on the first measured voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, the first single peak value of the radio frequency voltage on the high-voltage electrode is determined when the radio frequency resonant system is in the resonant state.

2. The method according to claim 1, characterized in that, The step of determining the first single peak value of the radio frequency voltage on the high-voltage electrode when the radio frequency resonant system is in the resonant state based on the first measured voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value includes: Obtain the voltage calibration curve of the high-voltage probe, which is used to indicate the fitting relationship curve between the voltage measured by the high-voltage probe and the actual voltage; Based on the voltage calibration curve and the first measured voltage peak-to-peak value, the actual voltage peak-to-peak value on the high-voltage electrode when the radio frequency resonant system is in the off-harmonic state is determined; Based on the actual voltage peak-to-peak value, the first induced voltage peak-to-peak value, and the second induced voltage peak-to-peak value, the first RF voltage single peak value on the high-voltage electrode is determined when the RF resonant system is in the resonant state.

3. The method according to claim 2, characterized in that, The formula for calculating the single peak value of the first radio frequency voltage is: V0=V 感应P0谐振 / V 感应P1偏谐 ×y(V 电极P1偏谐 ) / 2000 Where V0 represents the single peak value of the first radio frequency voltage, V 感应P0谐振 V represents the peak-to-peak value of the second induced voltage. 感应P1偏谐 y(V) represents the peak-to-peak value of the first induced voltage. 电极P1偏谐 () represents the actual peak-to-peak value corresponding to the first measured voltage peak-to-peak value.

4. The method according to claim 2, characterized in that, The process of obtaining the voltage calibration curve of the high-voltage probe includes: Obtain the impedance value of the standard power load at the resonant frequency measured by a vector network analyzer, and the RF power read from the RF power source; Based on the impedance value and the radio frequency power, the theoretical peak-to-peak voltage is determined; Obtain multiple sets of the theoretical voltage peak-to-peak value and the second measured voltage peak-to-peak value measured by the high-voltage probe under the theoretical voltage peak-to-peak value; Based on multiple sets of theoretical voltage peak-to-peak values ​​and the second measured voltage peak-to-peak values, the voltage calibration curve of the high-voltage probe is obtained by fitting.

5. The method according to any one of claims 1 to 4, characterized in that, The first single peak value of the radio frequency voltage is the radio frequency voltage on the high voltage electrode when the first power is fed into the radio frequency resonant system in the resonant state, and the radio frequency voltage on the high voltage electrode is different when different powers are fed in.

6. The method according to claim 5, characterized in that, The method further includes: When feeding the second power into the radio frequency resonant system, based on the first radio frequency voltage single peak value, the first power, and the second power, the second radio frequency voltage single peak value on the high voltage electrode is determined when the radio frequency resonant system is in the resonant state and the second power is fed in.

7. The method according to claim 6, characterized in that, The formula for calculating the single peak value of the second radio frequency voltage is: in, This indicates a single peak value of the second radio frequency voltage. This indicates a single peak value of the first radio frequency voltage. This indicates the second power. This represents the first power.

8. A device for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system, characterized in that, The device is applied to a radio frequency resonant system, wherein an inductive ground electrode is placed in the radio frequency resonant system, and the inductive ground electrode contains an inductive inner conductor. The inductive inner conductor is used to sense the radio frequency voltage on the high-voltage electrode and generate an inductive signal. The device includes: The first acquisition module is used to acquire the first peak-to-peak value of the measured voltage obtained by the high-voltage probe when the radio frequency resonant system is in a detuned state, wherein the high-voltage probe is connected to the high-voltage electrode in the detuned state. The second acquisition module is used to acquire the peak-to-peak value of the first induced voltage induced by the inductive inner conductor when the radio frequency resonant system is in the biased state. The third acquisition module is used to acquire the peak-to-peak value of the second induced voltage obtained by the inductive inner conductor when the radio frequency resonant system is in a resonant state. In the resonant state, the connection between the high voltage probe and the high voltage electrode is disconnected. The resonant frequency and operating frequency of the resonant state in the radio frequency resonant system are the same as the operating frequency of the off-harmonic state in the radio frequency resonant system. The off-harmonic state is the state in which the intrinsic resonant frequency deviates from the operating frequency. The first determining module is used to determine, based on the first measured voltage peak value, the first induced voltage peak value, and the second induced voltage peak value, the first RF voltage single peak value on the high voltage electrode when the RF resonant system is in the resonant state.

9. A radio frequency voltage measuring device, comprising: The processor and the memory that stores the program; The program includes instructions that, when executed by the processor, cause the processor to perform a method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to any one of claims 1-7.

10. A non-transitory computer-readable storage medium storing computer instructions, wherein, The computer instructions are used to cause the computer to execute a method for measuring the radio frequency voltage on the high-voltage electrode in a radio frequency resonant system according to any one of claims 1-7.

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