Deposition member and deposition apparatus

Abstract

The application provides a deposition device and a deposition component, the deposition component comprises a deposition ring, a center node and a plurality of support rods; the center node is arranged at the center position of the deposition ring, one end of the support rod is connected with the center node, and the other end is connected with the deposition ring; the support rod is curved in the radial direction of the deposition ring, and the bending directions and bending radii of the plurality of support rods are consistent; the plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas. In this way, by configuring the support rod to be curved, when the support rod is heated and expands, the deformation is generated along the bending direction first, the stress applied to the center node is reduced or avoided, the center node is prevented from being arched, collapsed, twisted or deviated in height, and the overall deposition component is prevented from being irregularly changed in structure.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a deposition member and a deposition equipment. BACKGROUND

[0002] In the prior art, when a thick aluminum film (for example, the thickness of the aluminum film is greater than 10Kå) is deposited by using a deposition device such as a physical vapor deposition device, an undesirable phenomenon that the thickness of the film in the middle is greater than the thickness of the film at the edge often occurs, and this phenomenon becomes more and more obvious as the thickness of the film increases. In order to improve the uniformity of thick film deposition, a deposition member is arranged above a semiconductor substrate, and the deposition member is used to shield and guide sputtering particles, so as to improve the phenomenon of non-uniform film thickness.

[0003] However, in a physical vapor deposition process, the existing deposition member is prone to irreversible deformation under the action of high temperature. After deformation, the deposition member will have irregular changes in position, height and levelness, which will cause the originally designed shielding angle and range to be invalid, and if the height deviation is large, it may also cause scratching of the semiconductor substrate and other consequences, thereby reducing the stability and reliability of film deposition. SUMMARY

[0004] The purpose of the present application is to provide a deposition member and a deposition equipment to solve the problem of irregular stress deformation of the existing deposition member.

[0005] To solve the above technical problems, the present application provides a deposition member, which comprises a deposition ring, a center node and a plurality of support rods.

[0006] The center node is arranged at the center position of the deposition ring, one end of the support rod is connected with the center node, and the other end is connected with the deposition ring.

[0007] The support rod is curved in the radial direction of the deposition ring, and the bending directions and bending radii of the plurality of support rods are consistent. The plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas.

[0008] Optionally, the end of the support rod connected with the center node is a stress acting end, the bending center of the support rod is located inside the tangent line of the stress acting end of the support rod, and there is a gap between the tangent line and the axis of the center node.

[0009] Optionally, the axis of the center node is located on the same side of the tangent lines of the plurality of support rods corresponding to the stress acting end.

[0010] Optionally, the deposition ring is provided with a stress groove, the stress groove is arranged through the deposition ring along the axial direction of the deposition ring, and the position of the stress groove corresponds to one end of the support rod connected to the deposition ring.

[0011] Optionally, the cross section of the stress groove is in the shape of a racetrack, which is composed of two long sides and two end arcs, wherein the two long sides are curved in the direction of the one end of the support rod connected to the deposition ring.

[0012] Optionally, the plurality of support rods are uniformly arranged in the circumferential direction around the central node, so that the plurality of divided deposition areas correspond to the same area.

[0013] Optionally, the central node is a cylindrical body, one end of the plurality of support rods is connected to the peripheral wall of the cylindrical body, the outer diameter of the cylindrical body is 5mm-8mm, and the height of the cylindrical body is 5mm-10mm.

[0014] Optionally, the longitudinal section of the deposition ring is a rectangular section, and the difference between the outer diameter and the inner diameter of the deposition ring is 10mm-20mm; or the longitudinal section of the deposition ring is a circular section, and the diameter of the circular section is 10mm-20mm.

[0015] To solve the above technical problems, the present application further provides a deposition device, which comprises a bearing ring, a support column and a deposition part as described above; the inner wall of the bearing ring is provided with a radial extension boss, the support column is arranged between the deposition ring and the boss, so that the deposition ring is carried on the boss through the support column, and a gap is maintained between the deposition ring and the boss.

[0016] Optionally, the upper surface of the boss is provided with a plurality of first mounting holes, the lower surface of the deposition ring is provided with a plurality of second mounting holes, the plurality of first mounting holes and the plurality of second mounting holes are arranged one by one in correspondence, the bottom end and the top end of the support column are respectively accommodated in the corresponding first mounting hole and second mounting hole, the bottom end of the support column is gap-fitted with the first mounting hole, and / or the top end of the support column is gap-fitted with the second mounting hole.

[0017] Optionally, the inner wall of the bearing ring and the outer wall of the deposition ring have a gap, and the inner wall of the bearing ring is provided with an annular storage groove corresponding to the position of the deposition ring; and / or the material of the support column is ceramic material.

[0018] In summary, in the deposition assembly and deposition equipment provided by the present application, the deposition assembly comprises a deposition ring, a center node and a plurality of support rods; the center node is arranged at the center position of the deposition ring, one end of the support rod is connected with the center node, and the other end is connected with the deposition ring; the support rod is curved in an arc shape in the radial direction of the deposition ring, and the bending directions and bending radii of the plurality of support rods are consistent; the plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas.

[0019] In this way, by configuring the support rod to be curved in an arc shape, when the support rod expands due to heat, the deformation of the support rod is preferentially generated in the bending direction, that is, the stress generated by the expansion of the support rod is preferentially offset by the bending of the support rod itself, so that the stress applied to the center node is reduced or avoided, and the arching or collapse of the center node in the height direction is reduced or avoided. Further, the bending directions and bending radii of the plurality of support rods are consistent, so that the bending deformation of the support rod generated by heat is substantially the same, the undesirable twisting or deviation of the center node due to uneven stress is reduced or avoided, the irregular structural change of the deposition assembly as a whole is reduced or avoided, and the stability and reliability of thin film deposition are ensured. BRIEF DESCRIPTION OF DRAWINGS

[0020] Those skilled in the art will understand that the provided drawings are for better understanding of the present application, and do not constitute any limitation on the scope of the present application.

[0021] Figure 1 is a top view of the deposition assembly of an embodiment of the present application.

[0022] Figure 2 is a perspective view of the deposition assembly of an embodiment of the present application.

[0023] Figure 3 is a partial enlarged view of the center portion of the deposition assembly of an embodiment of the present application.

[0024] Figure 4 is a partial enlarged view of the connection portion of the support rod and the deposition ring of an embodiment of the present application.

[0025] Figure 5 is a cross-sectional view of the support rod in the A-A section direction of Figure 1 .

[0026] Figure 6 is an axial section view of the deposition equipment of an embodiment of the present application.

[0027] Figure 7 is an enlarged view of part B of the deposition equipment shown in Figure 6 .

[0028] Figure 8is a schematic diagram of an assembled deposition device according to an embodiment of the present application.

[0029] In the drawings: 1 - deposition ring; 11 - stress groove; 11a - long side; 11b - circular arc; 12 - connecting portion; 13 - second mounting hole; 2 - central node; 3 - support rod; 4 - deposition area; 5 - bearing ring; 51 - boss; 52 - first mounting hole; 53 - gap; 54 - annular storage groove; 6 - support column; 8 - wafer; 91 - adapter; 92 - bearing seat; 93 - cavity; 94 - wafer base. DETAILED DESCRIPTION

[0030] To make the objects, advantages and features of the present application more clearly, the following further describes the present application in conjunction with the drawings and specific embodiments. It should be noted that the drawings are all very simplified and not drawn in proportion, and are only used to facilitate and clearly assist the purpose of describing the embodiments of the present application. In addition, the structures shown in the drawings are often part of the actual structure. In particular, the emphasis shown in each drawing is different, and sometimes different proportions are used.

[0031] As used in the present application, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. The term "or" is generally employed in its sense including "and / or" unless the content clearly dictates otherwise. The term "at least two" is generally employed in its sense including "two or more" unless the content clearly dictates otherwise. In addition, the terms "first", "second", "third", etc. are used only for descriptive purposes and should not be construed as indicating or implying relative importance or an indicated number of technical features. Thus, features defined with "first", "second", "third" can explicitly or implicitly include one or at least two of the features. "One end" and "the other end" and "proximal end" and "distal end" generally refer to two parts corresponding to each other, which not only includes the end point. In addition, as used in the present application, "mounting", "connecting", "connecting", one element "provided" in another element should be understood broadly, generally only indicates the connection, coupling, cooperation or transmission relationship between the two elements, and the two elements can be directly or indirectly connected, coupled, cooperated or transmitted through intermediate elements, and cannot be understood as indicating or implying the spatial position relationship between the two elements, i.e. one element can be in any direction inside, outside, above, below or one side of another element, unless the content is otherwise clearly indicated. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the drawings, upward or upward direction is toward the top of the corresponding drawing, and downward or downward direction is toward the bottom of the corresponding drawing.

[0032] The present application aims to provide a deposition device and a deposition apparatus to solve the problem of stress deformation of the existing deposition device in a high temperature environment. For example, when using a device such as physical vapor deposition to deposit a thick aluminum film, the deposition device can be used to shield and guide sputtering particles to improve the phenomenon of uneven film thickness. When the deposited aluminum film thickness is greater than 10 angstroms, as the aluminum film thickness continues to thicken, the temperature in the reaction chamber also rises, which causes the deposition device to irreversibly deform under the action of high temperature. The following is described with reference to the accompanying drawings.

[0033] Please refer to Figure 1 and Figure 2 , the present application provides a deposition device, which comprises a deposition ring 1, a center node 2 and a plurality of support rods 3; the center node 2 is arranged at the center position of the deposition ring 1, one end of the support rod 3 is connected with the center node 2, and the other end is connected with the deposition ring 1; the support rod 3 is curved in the radial direction of the deposition ring 1 (i.e. the horizontal direction of the deposition ring 1), and the bending direction and the bending radius of the plurality of support rods 3 are consistent; the plurality of support rods 3 are arranged radially around the center node 2 to divide the area between the deposition ring 1 and the center node 2 into a plurality of deposition areas 4.

[0034] In Figure 1 and Figure 2 exemplary embodiments, the number of support rods 3 and deposition areas 4 is 6. Those skilled in the art can configure the number of support rods 3 and deposition areas 4 differently according to actual needs, and the present application is not limited thereto.

[0035] For example, the deposition device comprises a deposition ring 1 and a center node 2 arranged on the same center axis, the deposition ring 1 is in a ring structure, and the center part can be in a ring structure or a solid disc shape. The center node 2 is connected to the deposition ring 1 by a plurality of support rods 3, the plurality of support rods 3 are arranged radially around the center node 2 to divide the area between the deposition ring 1 and the center node 2 into a plurality of deposition areas 4. Each support rod 3 can be fixedly connected or detachably connected to the corresponding structure, when the detachable connection is adopted, the connection position of the support rod 3 can be adjusted as needed, and the area of different deposition areas 4 can be adjusted. The support rod 3 is in an arc-shaped rod structure as a whole, and the bending direction is the radial direction of the deposition ring 1, so that the plurality of deposition areas 4 present a "fan-shaped" area.

[0036] When this deposition element is used in a thin film deposition apparatus, the central node 2 is typically horizontally positioned coaxially with the center of the deposition chamber. The central node 2 and the deposition ring 1 of the deposition element can act as shielding to reduce the settling of sputtered particles in the areas below these structures. The separated deposition areas 4 are not shielded. Simultaneously, the shielding and guiding of the various support rods 3 are utilized to improve the uneven film thickness. For example, sputtered particles are most concentrated in the central region of the chamber, and a large number of particles bombard the wafer center, causing excessively fast deposition and excessively thick films in the central region. By adjusting the surface area of ​​the central node 2 as needed, the film deposition in the wafer center can be reduced, avoiding the problem of excessively fast and thick films in the wafer center. Furthermore, in the deposition chamber, when sputtered particles collide with the surface of the support rod 3, some particles are adsorbed onto the surface, forming a film on the support rod 3, while others are reflected off the surface of the support rod 3, changing their flight direction to areas that were originally inaccessible or difficult to reach directly. This method achieves shielding and guiding of sputtered particles, ultimately improving the uneven film thickness.

[0037] Meanwhile, the inventors discovered that the multiple support rods in existing deposition components are mostly of a regular shape, extending radially along the deposition ring like straight rods. This means that the stress deformation caused by the thermal expansion of these support rods has no axial release path, easily causing pushback against the central nodes and deposition ring at both ends, resulting in unexpected irregular deformation of the support rods, central nodes, or deposition ring. Simultaneously, the stress deformation from the thermal expansion of multiple support rods acts on the central node, causing it to arch or collapse in the height direction. This may cause scratching between the deposition component and the wafer during wafer transfer into or out of the process cavity.

[0038] In this embodiment of the invention, the support rod 3 is configured with an arc-shaped bend, so that when the support rod 3 expands due to heat, it preferentially deforms along the bending direction. That is, the stress generated by the thermal expansion of the support rod 3 is preferentially offset by the bending of the support rod 3 itself, reducing or avoiding the application of stress to the center node 2, and reducing or avoiding stress on the center node 2 in the height direction (perpendicular to the center node 2). Figure 1 The paper shows an arch or collapse. The bending direction and curvature of the multiple support rods 3 are consistent, so that the bending deformation of the support rods 3 caused by heat is roughly the same. This reduces or avoids undesirable twisting or displacement of the central node 2 due to uneven force, and reduces or avoids irregular structural changes in the overall deposited part, thus ensuring the stability and reliability of the thin film deposition.

[0039] Please refer to Figure 3 and in conjunction with references Figure 1 and Figure 2Further, the end of the support rod 3 connected with the center node 2 is a stress action end, and the bending center of the support rod 3 is located inside the tangent line T of the support rod 3 at the stress action end, and there is a gap between the tangent line T and the axis A of the center node 2.

[0040] It should be noted that the stress action end can be simplified as the connection point of the bending axis of the support rod 3 and the center node 2. In order to further reduce the axial stress of the center node 2 generated by the support rod 3 when it expands due to heat, it is preferred that the tangent line T of the stress action end of the support rod 3 deviates from the axis A of the center node 2. In this way, when the support rod 3 expands due to heat, the stress applied to the center node 2 does not pass through the axis A of the center node 2, that is, does not pass through the center of the center node 2, but is eccentric, thereby converting part of the axial stress into a bending moment of the center node 2, reducing the direct axial thrust of the center node 2, avoiding the center node being extruded by the axial stress of the support rod 3 to generate arching and getting off the bed, thereby avoiding the deformation of the deposition member in the height direction and reducing the possibility of scratching the semiconductor substrate. For example, taking Figure 3 for example, the support rod 3 bends clockwise from the stress action end to the deposition ring 1. In the horizontal plane where the deposition ring 1 is located, the tangent line T (and its extension line) of the support rod 3 at the stress action end has an inner side (i.e. the concave side of the bending) and an outer side (i.e. the convex side of the bending) on both sides of the tangent line T, and the bending center of the support rod 3 is located on the inner side of the tangent line T. For another example, if the support rod 3 bends counterclockwise from the stress action end to the deposition ring, in the horizontal plane where the deposition ring 1 is located, the tangent line T (and its extension line) of the support rod 3 at the stress action end has an inner side (i.e. the concave side of the bending) and an outer side (i.e. the convex side of the bending) on both sides of the tangent line T, and the bending center of the support rod 3 is still located on the inner side of the tangent line T.

[0041] In one embodiment, the axis A of the center node 2 is located on the same side of the tangent line T of the plurality of support rods 3 corresponding to the stress action end. That is, the axis A of the center node 2 is located on the inner side or the outer side of the tangent line T of the plurality of support rods 3 corresponding to the stress action end.

[0042] For example, continuing with Figure 3As shown in the example, for each support rod 3, the axis A of the center node 2 is located outside the tangent T corresponding to the stress action end. When the support rods 3 are stressed and deformed due to heat, the support rods 3 simultaneously apply bending moments in the clockwise direction to the center node 2. Since the bending direction and bending radius of the support rods 3 are consistent, the bending moments applied by the support rods 3 are substantially the same in size, and the combined bending moments formed on the center node 2 cancel each other out in size, so that when the support rods 3 expand due to heat, the center node 2 has a tendency to rotate in the clockwise direction or a small amount of rotation around its own axis A, thereby eliminating part of the stress caused by the deformation of the support rods 3. The center node 2 is reduced or avoided from arching or collapsing in the direction of the axis A (i.e., the height direction). At the same time, since the center node 2 only has a tendency to rotate or a small amount of rotation around its own axis A, it will not produce a horizontal offset or a distortion in the height direction, and the deformation of the entire deposition member is regular and controllable. It is easy to understand that when the axis A of the center node 2 is located inside the tangent T corresponding to the stress action end of the support rods 3, the support rods 3 simultaneously apply bending moments in the counterclockwise direction to the center node 2, and the effect is similar to the example shown above, which will not be described here. Figure 3 The example shown above is similar to the example shown above, which will not be described here.

[0043] Preferably, the plurality of support rods 3 are arranged circumferentially uniformly around the center node 2, so that the areas of the plurality of divided deposition areas 4 are the same. The circumferentially uniform arrangement of the support rods 3 can make the areas of the deposition areas 4 the same, and also make the directions of the bending moments applied by the support rods 3 to the center node 2 change uniformly in the circumferential direction, thereby facilitating the mutual cancellation of the combined bending moments formed on the center node 2 and avoiding irregular deformation of the center node 2 other than rotation around its own axis A.

[0044] In an alternative example, the center node 2 is a cylindrical body, and its axis A coincides with the axis of the deposition ring 1. One end of each of the plurality of support rods 3 is connected to the peripheral wall of the cylindrical body. The outer diameter of the cylindrical body is 5mm-8mm, and the height of the cylindrical body is 5mm-10mm. The center node 2 in the form of a cylindrical body can produce a certain rotation around its own axis A without causing any change in the axial projection, which is beneficial to reduce the deformation of the deposition member due to heat and thereby improve the uniformity of the deposition.

[0045] Reference is made to Figure 4 in combination with reference to Figure 1 and Figure 2Optionally, the deposition ring 1 is provided with a stress groove 11, which is arranged through the deposition ring 1 along the axial direction of the deposition ring 1, and the position of the stress groove 11 corresponds to the end of the deposition ring 1 connected to the support rod 3. It is easy to understand that when the support rod 3 is heated and expanded, in addition to applying a bending moment or stress to one end of the central node 2, it will also apply stress to one end of the deposition ring 1. The arrangement of the stress groove 11 can significantly eliminate the stress applied by the support rod 3 to the deposition ring 1 through deformation.

[0046] In one embodiment, the cross section of the stress groove 11 (i.e. the cross section perpendicular to the axial direction of the deposition ring 1) is a racetrack shape, which is composed of two long sides 11a and two circular arcs 11b at the ends; wherein the two long sides 11a are curved in an arc shape, and the curved direction is concave to the end of the deposition ring 1 connected to the support rod 3. The purpose of arranging the stress groove 11 is to allow the connection part 12 of the deposition ring 1 and the support rod 3 to deform when the support rod 3 is heated and expanded in the axial direction, and the deformation is mainly towards the outside of the deposition ring 1. The racetrack-shaped cross section of the stress groove 11 is beneficial to the deformation of the connection part 12, thereby further reducing the resistance of the support rod 3 to the main part of the deposition ring 1 when it is heated and expanded, and reducing the irregular deformation of the main part of the deposition ring 1.

[0047] In one embodiment, the longitudinal cross section of the deposition ring 1 (i.e. the cross section along the axial direction of the deposition ring 1) is a rectangular cross section, and the difference between the outer diameter and the inner diameter of the deposition ring 1 is 10mm-20mm.

[0048] In another alternative embodiment, the longitudinal cross section of the deposition ring 1 is a circular cross section, and the diameter of the circular cross section is 10mm-20mm.

[0049] Further, the inventors have found that when the plurality of support rods 3 of the deposition device are regular in shape, for example, straight rods extending in the radial direction of the deposition ring, the cross-sectional shape and spatial orientation are consistent, and when the sputtering particles fly to the wafer surface in a substantially straight path, the support rods 3 will cast a shadow area on the wafer like an obstacle, and the film deposition rate in this shadow area will be significantly lower than that in the surrounding area. During the entire process, the support rods 3 cast the same shape and size of shadow defects on the wafer, and when the support rods 3 are symmetrically distributed, these shadow defects will also be distributed radially symmetrically on the wafer. When the entire wafer is scanned on the film thickness measuring instrument, the instrument will clearly capture the symmetrically recessed points and connect them into a regular pattern corresponding to the number and position of the support rods 3, i.e. a film resistance (RS) pattern similar to the shape of the deposition device.

[0050] In addition, when the plurality of support rods 3 of the deposition assembly are regular in shape, during the deposition of the thin film, the sputtered particles deposited on the support rods 3 will also increase over time, thereby causing the stress of the film layer on the support rods 3 to accumulate, causing the film layer to crack and peel off from the support rods 3, resulting in particle contamination, falling on the wafer and causing yield loss.

[0051] To solve the above problems, please refer to Figure 5 In a preferred example, the support rod 3 has a twist around its own axis. By configuring the support rod 3 to twist around its own axis, the projection area or projection angle of the support rod 3 at different positions relative to the target material direction is changed, thereby adjusting the projection of the support rod 3 on the wafer, reducing the directionality and consistency of the shadow projected by the support rod 3 on the wafer, and thereby dispersing the concentrated, regular thickness variation into random, indistinguishable small variations. During the deposition of the thin film, the sputtered particles flying from different directions have different angles and directions of shielding by the support rod 3, so that the shadow projected by the support rod 3 on the wafer is no longer a clear area, but a "dispersed" and "blurred" area, the thickness variation of which is gradual and irregular, without clear boundaries, and the change in film thickness changes from a sharp transition to a gradual transition, thereby eliminating regular, easily identifiable film resistance (RS) patterns.

[0052] Further, by configuring the support rod 3 to twist around its own axis, there is no fixed, continuous area on the surface of the support rod 3 that always faces the target material, and sputtered particles will be deposited on each surface of the support rod 3 in different orientations, resulting in a more uniform film layer distribution, avoiding the accumulation of stress in a particular direction, even if peeling occurs, it is in the form of extremely small and dispersed particles, greatly reducing the risk of large particles, thereby avoiding the situation of wafer contamination by large particles.

[0053] The deposition assembly of the present embodiment will be further described below in conjunction with the example shown in Figure 5 For the sake of description and comparison of the twist of the support rod 3, the twist angle is defined as a parameter of the twist amount at different positions of the support rod 3. Specifically, the cross section of any position on the support rod 3 has a principal axis of inertia passing through its centroid, wherein the angle between the principal axis of inertia corresponding to the minimum moment of inertia and the axis A of the deposition ring 1 is the twist angle of the support rod 3 at that position.

[0054] In Figure 5For example, it shows the cross sections of different positions of the support rod 3, including cross section C1 at the connection with the central node 2, cross section C2 at the connection with the deposition ring 1, and cross section C3 between cross section C1 and cross section C2. Taking cross section C2 as an example, it is in the shape of a racetrack, that is, composed of two long sides and two end arcs. Based on the prior art, one skilled in the art can determine its center O and the principal inertia axes y and z passing through the center O, which are perpendicular to each other. Further, since the shape of cross section C2 is longer in the direction of the principal inertia axis y and shorter in the direction of the principal inertia axis z, the moment of inertia Iy of cross section C2 corresponding to the principal inertia axis y is smaller than the moment of inertia Iz of cross section C2 corresponding to the principal inertia axis z, so the principal inertia axis y is the principal inertia axis corresponding to the minimum moment of inertia, and the included angle β between the principal inertia axis y and the axis A of the deposition ring 1 is the torsion angle of the support rod 3 at cross section C2. Similarly, the torsion angle of the support rod 3 at cross section C1 is α, and the torsion angle of the support rod 3 at cross section C3 is γ.

[0055] Preferably, the cross section of the support rod 3 at any position is a center-symmetric cross section, which has a long axis and a short axis passing through the center of the cross section. For the racetrack-shaped cross section shown in Figure 5 , the long axis is the principal inertia axis y and the short axis is the principal inertia axis z. It should be noted that Figure 5 the racetrack-shaped cross section shown is only an example of the cross section shape of the support rod 3 and is not a limitation on the cross section shape of the support rod 3. In other embodiments, the cross section shape of the support rod 3 can also be an elliptical shape, a rounded rectangular shape, a rectangular shape, or other center-symmetric shapes, or even an asymmetric regular or irregular shape.

[0056] The support rod 3 has a torsion around its own axis, which can be understood as a change in the torsion angle of the support rod 3 at different cross sections. Due to the change in the torsion angle of the support rod 3 at different cross sections, the projected area and the projection angle of the support rod 3 relative to the target material direction also change. During the thin film deposition process, the sputtered particles flying from different directions are shielded by the support rod 3 at different angles and directions, so that the projection range of the sputtered particles on the wafer changes with the different torsion conditions of the support rod 3, thereby eliminating regular and easily identifiable resistive film (RS) patterns, adjusting the thickness of the thin film at different positions, and improving local uniformity. It can be understood that as long as the support rod 3 has a torsion around its own axis, the above effects can be achieved. That is, in some embodiments, the support rod 3 can include several torsion sections, and can also include several non-torsion sections at the same time. In other embodiments, the support rod 3 continuously twists along its own axis, so that the support rod 3 has the above improvement effect on the entire length. Preferably, the torsion angle of the support rod 3 along its own axis changes nonlinearly.

[0057] In some embodiments, the cross-section of the support rod 3, in addition to torsion about its own axis, also exhibits a change in cross-sectional shape. Preferably, the cross-section of the support rod 3 varies axially at least in the direction of the principal axis of inertia corresponding to the minimum moment of inertia. Continuing with... Figure 5 Taking the illustrated embodiment as an example, the principal axis of inertia corresponding to the minimum moment of inertia of its racetrack-shaped cross-section is the principal axis of inertia y, which is also its major axis. In other words, along the axial direction of the support rod 3, the cross-section of the support rod 3 varies at least in the direction of its major axis. Considering that the function of the support rod 3 is to shield and guide the sputtered particles from the target, combined with the torsion of the support rod 3 around its axis, the variation of its cross-section in the direction of its major axis helps to improve the uniformity of the target's projection area on the wafer via the support rod 3, further improving the patterning trend of the thin-film resistor, while ensuring a smaller shielding area, increasing the deposition rate, and improving the wafer throughput per hour (WPH).

[0058] Please refer to Figures 6 to 8 Based on the deposition element described above, the present invention also provides a deposition apparatus, which includes a support ring 5, a support column 6, and the deposition element described above. The inner wall of the support ring 5 is provided with a radially extending boss 51. The support column 6 is disposed between the deposition ring 1 and the boss 51, so that the deposition ring 1 is mounted on the boss 51 via the support column 6, and a gap is maintained between the deposition ring 1 and the boss 51. Further, the deposition apparatus also includes an adapter 91, a support seat 92, a chamber 93, and a wafer base 94. The adapter 91 is connected to the chamber 93 and is used to support the support ring 5 and the support seat 92. The wafer base 94 passes through the chamber 93 and the support seat 92 and is used to support a wafer 8.

[0059] Since the expansion of the deposition component when heated is mainly radial in the deposition ring 1, the axial deformation of the deposition ring 1 is negligible. Therefore, by using the support column 6 to support the deposition ring 1, a controllable and stable gap can be formed between the deposition ring 1 and the boss 51, keeping the entire deposition component stable in the height direction. It is easy to understand that the gap between the deposition ring 1 and the boss 51 can be changed by replacing the support column 6 with one of different lengths to meet different requirements. Optionally, the support column 6 is made of ceramic.

[0060] In an alternative example, the upper surface of the boss 51 is provided with a plurality of first mounting holes 52, and the lower surface of the deposition ring 1 is provided with a plurality of second mounting holes 13. The plurality of first mounting holes 52 and the plurality of second mounting holes 13 are provided in a one-to-one correspondence. The bottom end and the top end of the support column 6 are respectively accommodated in the corresponding first mounting holes 52 and second mounting holes 13.

[0061] In some embodiments, the bottom end of the support post 6 is clearance fitted with the first mounting hole 52. In some embodiments, the top end of the support post 6 is clearance fitted with the second mounting hole 13. In some embodiments, the bottom end and the top end of the support post 6 can be clearance fitted with the first mounting hole 52 and the second mounting hole 13, respectively. As referred to herein, the bottom end and the top end of the support post 6 are understood to be the two ends of the support post 6 along its own axial direction, which is preferably parallel to the axis of the deposition ring 1 and perpendicular to the upper surface of the boss 51.

[0062] In other embodiments, only one end of the support post 6 is clearance fitted with the corresponding mounting hole, and the other end is movably fitted with the corresponding mounting hole. Please refer to Figure 7 In one exemplary embodiment, the top end of the support post 6 is clearance fitted with the second mounting hole 13, while the bottom end of the support post 6 is movably fitted with the first mounting hole 52, i.e. the bottom end of the support post 6 can have a certain freedom of movement in the first mounting hole 52. Correspondingly, the cross section of the first mounting hole 52 (i.e. the cross section perpendicular to the axial direction of the first mounting hole 52) can be configured in the shape of a certain length in the radial direction of the deposition ring 1, such as an elongated shape. In this way, even if the deposition ring 1 expands due to heat during the process, it can move the support post 6 in the first mounting hole 52, thereby releasing the thermal strain of the deposition ring 1. It can be understood that Figure 6 The exemplary embodiment in which only the bottom end of the support post 6 is movably fitted with the first mounting hole 52 is not limiting. In other embodiments, the top end of the support post 6 can be movably fitted with the second mounting hole 13, which is not limited by the present embodiment.

[0063] Further, the inner wall of the carrier ring 5 has a gap 53 with the outer wall of the deposition ring 1, and the inner wall of the carrier ring 5 is provided with an annular storage groove 54 corresponding to the position of the deposition ring 1. It can be easily understood that the existence of the gap 53 allows the deposition ring 1 to expand radially to a certain extent without being squeezed by the inner wall of the carrier ring 5. The annular storage groove 54 is used to store the target material (such as aluminum) deposited in the gap 53 during the process.

[0064] In summary, in the deposition assembly and deposition equipment provided by the present application, the deposition assembly comprises a deposition ring 1, a center node 2 and a plurality of support rods 3; the center node 2 is arranged at the center position of the deposition ring 1, one end of the support rod 3 is connected with the center node 2, and the other end is connected with the deposition ring 1; the support rod 3 is curved in an arc shape in the radial direction of the deposition ring 1, and the bending directions and bending radii of the plurality of support rods 3 are consistent; the plurality of support rods 3 are arranged radially around the center node 2 to divide the area between the deposition ring 1 and the center node 2 into a plurality of deposition areas 4. In this way, by configuring the support rod 3 to be curved in an arc shape, when the support rod 3 expands due to heat, the support rod 3 preferentially deforms along the bending direction, that is, the stress generated by the expansion of the support rod 3 is preferably offset by the bending of the support rod 3 itself, reducing or avoiding the application of stress to the center node 2, reducing or avoiding the arching or collapse of the center node 2 in height. Further, the bending directions and bending radii of the plurality of support rods 3 are consistent, so that the bending deformation of the support rod 3 generated by heat is approximately the same, reducing or avoiding the generation of unexpected distortion or deviation of the center node 2 due to uneven stress, reducing or avoiding the generation of irregular structural changes of the deposition assembly as a whole, and ensuring the stability and reliability of thin film deposition.

[0065] It should be noted that the above several embodiments can be combined with each other. The above description is only a description of the preferred embodiments of the present application, and does not limit the scope of the present application in any way. Any modification or modification made by a person skilled in the art based on the above disclosure is within the scope of the present application.

Claims

1. A deposition member characterized by comprising: The deposition ring, the center node and the plurality of support rods are included. The center node is arranged at the center position of the deposition ring, one end of the support rod is connected with the center node, and the other end is connected with the deposition ring. The support rod is curved in the radial direction of the deposition ring, and the bending directions and bending radii of the plurality of support rods are consistent. The plurality of support rods are arranged radially around the center node to divide the area between the deposition ring and the center node into a plurality of deposition areas.

2. The depositing member of claim 1, wherein, The plurality of support rods are arranged uniformly in the circumferential direction around the center node, so that the divided plurality of deposition areas have the same area.

3. The depositing member of claim 2, wherein, The end of the support rod connected with the center node is a stress acting end, the bending center of the support rod is located inside the tangent line of the stress acting end, and there is a gap between the tangent line and the axis of the center node.

4. The depositing member of claim 1, wherein, The axis of the center node is located on the same side of the tangent line of the plurality of support rods corresponding to the stress acting end.

5. The depositing member of claim 4, wherein, The deposition ring is provided with a stress groove, the stress groove is arranged through the deposition ring in the axial direction of the deposition ring, and the position of the stress groove corresponds to the end of the support rod connected with the deposition ring.

6. The deposition member according to any one of claims 1 to 5, wherein The cross section of the stress groove is in the shape of a racetrack, which is composed of two long sides and two end arcs; wherein the two long sides are curved, and the bending direction is concave to the end of the support rod connected with the deposition ring.

7. The deposition member according to any one of claims 1 to 5, wherein The center node is a cylinder, one end of the plurality of support rods is connected around the peripheral wall of the cylinder, the outer diameter of the cylinder is 5mm-8mm, and the height of the cylinder is 5mm-10mm.

8. A deposition apparatus, characterized by, The longitudinal section of the deposition ring is a rectangular section, and the difference between the outer diameter and the inner diameter of the deposition ring is 10mm-20mm; or the longitudinal section of the deposition ring is a circular section, and the diameter of the circular section is 10mm-20mm.

9. The deposition apparatus of claim 8, wherein, The bearing ring, the support column and the deposition device of any one of claims 1-7 are included; the inner wall of the bearing ring is provided with a radially extending boss, the support column is arranged between the deposition ring and the boss, so that the deposition ring is carried on the boss through the support column, and a gap is maintained between the deposition ring and the boss.

10. The deposition apparatus of claim 8, wherein, The upper surface of the boss is provided with a plurality of first mounting holes, the lower surface of the deposition ring is provided with a plurality of second mounting holes, the plurality of first mounting holes and the plurality of second mounting holes are arranged one by one, the bottom end and the top end of the support column are respectively accommodated in the corresponding first mounting hole and the second mounting hole, the bottom end of the support column is gap fitted with the first mounting hole, and / or the top end of the support column is gap fitted with the second mounting hole. The inner wall of the bearing ring and the outer wall of the deposition ring have a gap, and the inner wall of the bearing ring is provided with an annular storage groove corresponding to the position of the deposition ring; and / or the material of the support column is ceramic material. The inner wall of the bearing ring and the outer wall of the deposition ring have a gap, and the inner wall of the bearing ring is provided with an annular storage groove corresponding to the position of the deposition ring; and / or the material of the support column is ceramic material.

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