Preparation method, device and equipment of end face coupler and storage medium

Abstract

The embodiment of the invention provides a preparation method and device of an end face coupler, equipment and a storage medium, and relates to the technical field of photoelectronics, and the method comprises the steps: preparing a template of the end face coupler through an electron beam exposure technology; the pattern of the template is consistent with that of the end face coupler; based on the template, a plurality of sub-modules of the template are prepared, and the patterns of the sub-modules are matched with the pattern of the template; and performing nanoimprinting on the first substrate through the plurality of sub-modules to obtain the end face coupler. According to the embodiment of the invention, the template of the end-face coupler is firstly prepared through the electron beam exposure technology, so that the precision of the end-face coupler can be ensured; according to the end face coupler, a plurality of sub-modules can be rapidly copied by using the template, rapid preparation can be realized, and the plurality of sub-modules are imprinted by using a nanoimprint technology, so that the precision of the end face coupler is further ensured. Therefore, on the premise that the precision of the end face coupler is guaranteed, the effect of rapid preparation can be achieved, no expensive preparation equipment is needed, and the cost is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optoelectronics, and in particular to a preparation method, device and equipment of an end-face coupler and a storage medium. BACKGROUND

[0002] The end-face coupler plays a vital role in electronic integrated circuits, and is responsible for realizing optical signal transmission between a chip and an optical fiber. Currently, when the end-face coupler is prepared, ultraviolet lithography technology and electron beam exposure technology are often used.

[0003] However, when the ultraviolet lithography technology is used, the cost required is high, and a piece of ultraviolet lithography equipment is expensive; when the electron beam exposure is used, because the electron exposure has a high resolution, the time required for preparing the end-face coupler is long, and the situation of large-scale batch production cannot be coped with. SUMMARY

[0004] The present application provides a preparation method, device and equipment of an end-face coupler and a storage medium, which are used for quickly preparing the end-face coupler and reducing the preparation cost.

[0005] In a first aspect, a preparation method of an end-face coupler comprises:

[0006] A template of the end-face coupler is prepared by using an electron beam exposure technology; a pattern of the template is consistent with a pattern of the end-face coupler;

[0007] Based on the template, a plurality of sub-templates of the template are prepared, and a pattern of the sub-templates is mutually fitted with the pattern of the template;

[0008] A first substrate is nano-imprinted by using the plurality of sub-templates, and the end-face coupler is obtained.

[0009] In the present application, the template of the end-face coupler is first prepared by using the electron beam exposure technology, which can ensure the precision of the end-face coupler; then the plurality of sub-templates can be quickly copied by using the template, which can realize quick preparation, and the plurality of sub-templates are further imprinted by using the nano-imprinting technology, which further ensures the precision of the end-face coupler. Therefore, the present application can realize the effect of quick preparation under the premise of ensuring the precision of the end-face coupler, and does not need high preparation equipment, and the cost is also reduced.

[0010] Optionally, the preparation of the template of the end-face coupler by using the electron beam exposure technology comprises:

[0011] Photoresist is applied on a second substrate;

[0012] The photoresist is exposed by using an electron beam according to the pattern of the end-face coupler, and a first resist mask is obtained; the first resist mask has the pattern of the end-face coupler.

[0013] According to the first glue mask, the second substrate is etched to obtain a template of the end face coupler.

[0014] In the embodiment of the application, the template of the end face coupler is prepared by using the electron beam exposure technology, so that the precision of the template can be ensured, and the precision of the sub-templates is also relatively high in the subsequent preparation of the sub-templates, thereby achieving the effect that the end face coupler is prepared with high precision.

[0015] Optionally, the preparation of the plurality of sub-templates based on the template comprises:

[0016] After the anti-sticking treatment of the template, the template is imprinted on a soft template by using the nano-imprinting technology;

[0017] The soft template is subjected to a demolding treatment to obtain a sub-template.

[0018] In the embodiment of the application, after the template is obtained, a plurality of sub-templates are prepared according to the template, and the subsequent imprinting is performed by using the sub-templates, so that the speed of preparing the end face coupler can be improved, and the problem that the precision of the end face coupler is reduced due to the damage of the template caused by a large number of imprinting using the template is avoided.

[0019] Optionally, the anti-sticking treatment of the template comprises:

[0020] The anti-sticking glue is spin-coated on the template, and the surface hydrophobic angle is greater than 90°.

[0021] In the embodiment of the application, the anti-sticking treatment is performed on the template, so that the template will not cause the problem of unsuccessful imprinting due to the existence of glue on the template in the imprinting process, and the problem that the precision of the template in the imprinting process is affected by the glue on the template is also avoided.

[0022] Optionally, the nano-imprinting of the first substrate by using the plurality of sub-templates to obtain the end face coupler comprises:

[0023] The imprinting glue is applied on the first substrate;

[0024] The plurality of sub-templates are imprinted on the imprinting glue by using the nano-imprinting technology to obtain a second glue mask, and the first substrate is etched according to the second glue mask to obtain the end face coupler.

[0025] In the embodiment of the application, the plurality of sub-templates are imprinted by using the nano-imprinting technology to obtain the end face coupler, so that the precision of the end face coupler is higher, and the speed of preparing the end face coupler can be improved by using the plurality of sub-templates to perform the imprinting.

[0026] Optionally, the method further comprises:

[0027] After heating the imprint glue, before the imprint glue is cured, the plurality of sub-molds are imprinted on the imprint glue by a nano-imprint technology.

[0028] In the embodiments of the present application, heating the imprint glue can make the impurities in the imprint glue evaporate faster, and heating the imprint glue can also accelerate the curing of the imprint glue. Performing imprinting before the imprint glue is cured avoids the problem that the imprint glue is too hard to be imprinted after being cured.

[0029] Optionally, the method further comprises:

[0030] The second substrate is subjected to a residual glue removal process by a microwave plasma glue removal process.

[0031] After the first substrate is etched according to the second glue mask, the method further comprises:

[0032] The first substrate is subjected to a residual glue removal process by a microwave plasma glue removal process.

[0033] In the embodiments of the present application, the first substrate and the second substrate are subjected to a residual glue removal process, so that no impurities are left on the first substrate and the second substrate. If there are residual glues, the accuracy of the preparation of the end-face coupler will be affected.

[0034] Optionally, etching the second substrate comprises:

[0035] The second substrate is etched by an inductively coupled plasma etching process.

[0036] Etching the first substrate according to the second glue mask comprises:

[0037] The first substrate is etched according to the second glue mask by an inductively coupled plasma etching process.

[0038] In the embodiments of the present application, the pattern on the glue mask can be etched on the required substrate by an etching technology, so that the pattern can be completely transferred to another structure, has strong repeatability, and the equipment is simple and the cost is low.

[0039] In a second aspect, the embodiments of the present application provide an end-face coupler, which is prepared by any of the above-mentioned methods.

[0040] Optionally, the end-face coupler is a reverse-tapered silicon optical end-face coupler, and the initial line width of the reverse-tapered silicon optical end-face coupler is less than 100 nm.

[0041] In a third aspect, the embodiments of the present application provide a device for preparing an end-face coupler, comprising:

[0042] An electron beam exposure device is configured to prepare a template of an end-coupler by an electron beam exposure technique; a pattern of the template is consistent with a pattern of the end-coupler.

[0043] A nano-imprinting device is configured to prepare a plurality of sub-templates of the template based on the template; the patterns of the sub-templates are consistent with each other and the pattern of the template.

[0044] The nano-imprinting device is further configured to nano-imprint a first substrate by the plurality of sub-templates to obtain a plurality of end-couplers.

[0045] Optionally, the application further comprises:

[0046] A coating device is configured to coat a photoresist on a second substrate.

[0047] The electron beam exposure device is further configured to perform electron beam exposure on the photoresist according to the pattern of the end-coupler to obtain a first resist mask; the first resist mask has the pattern of the end-coupler.

[0048] An etching device is configured to etch the second substrate according to the first resist mask to obtain the template of the end-coupler.

[0049] Optionally, the nano-imprinting device is further configured to:

[0050] After the template is subjected to anti-sticking treatment, the template is imprinted on a soft template by nano-imprinting technology.

[0051] The soft template is subjected to demolding treatment to obtain a sub-template.

[0052] Optionally, the coating device is further configured to:

[0053] The template is spin-coated with anti-sticking glue and achieves a surface hydrophobic angle greater than 90°.

[0054] Optionally, the coating device is further configured to:

[0055] The coating device coats a nano-imprinting glue on the first substrate.

[0056] Optionally, the nano-imprinting device is further configured to:

[0057] The plurality of sub-templates are imprinted on the nano-imprinting glue by nano-imprinting technology before the nano-imprinting glue is solidified to obtain a second resist mask, and the first substrate is etched according to the second resist mask to obtain the end-coupler.

[0058] Optionally, the nano-imprinting device is further configured to:

[0059] After the nano-imprinting glue is heated, the plurality of sub-templates are imprinted on the nano-imprinting glue by nano-imprinting technology before the nano-imprinting glue is solidified.

[0060] Optionally, the etching apparatus is further used for:

[0061] The second substrate is treated to remove residual adhesive using a microwave plasma adhesive removal process.

[0062] The first substrate is treated to remove residual adhesive using a microwave plasma adhesive removal process.

[0063] Optionally, the etching apparatus is further used for:

[0064] The second substrate is etched using an inductively coupled plasma etching process;

[0065] The first substrate is etched using an inductively coupled plasma etching process based on the second photomask. Attached Figure Description

[0066] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0067] Figure 1 A system architecture diagram provided for an embodiment of this application;

[0068] Figure 2 A flowchart illustrating a method for fabricating an end-face coupler provided in this application embodiment. Figure 1 ;

[0069] Figure 3 A schematic flowchart illustrating a method for preparing a template for an end-face coupler provided in this application embodiment;

[0070] Figure 4 This is a schematic diagram of the structure after the nanoimprinting process is completed;

[0071] Figure 5 A top view and a perspective view of an inverted conical silicon optical end-face coupler provided in the embodiments of this application;

[0072] Figure 6 A schematic diagram of an inverted conical silicon optical end-face coupler provided in this application embodiment. Figure 2 ;

[0073] Figure 7 A schematic diagram of an inverted conical silicon optical end-face coupler provided in this application embodiment. Figure 3 . Detailed Implementation

[0074] In order to make the purposes, technical solutions and beneficial effects of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application.

[0075] For the convenience of understanding, the terms involved in the embodiments of the present application are explained below.

[0076] An end face coupler is a kind of optical fiber coupler that transmits optical signals by tightly contacting the end faces of two optical fibers. This coupler has a simple structure and lower requirements for light sources and target optical fibers. However, due to the high precision requirement of the optical fiber end face, the handling and alignment of the optical fiber during use of the end face coupler are relatively complex. The end face coupler is located at the edge of the optical chip, has a large alignment tolerance and small coupling loss, and thus has a high coupling efficiency.

[0077] Silicon optical end face coupler, a kind of end face coupler. In modern communication systems, silicon optical end face coupler has become an essential component because it can effectively convert optical signals into electrical signals, thereby realizing high-speed communication.

[0078] Nanoimprint, a process test instrument, rapid replication and transfer of micro-nano scale pattern structure, with the advantages of high resolution, high yield and low cost; can easily make 3D micro shadow etching technology; polymer material direct imprint forming.

[0079] In order to facilitate the understanding of the present scheme, the application scenarios of the present scheme are introduced below.

[0080] During the preparation of the silicon optical end face coupler, the following two methods are usually used: 1) ultraviolet lithography technology. Use an ultraviolet lithography machine to prepare the silicon optical end face coupler. However, a single ultraviolet lithography machine is very expensive, and in small and medium-sized enterprises or laboratories, or in scenarios where the preparation precision requirement is not high, the cost performance is very low; 2) electron beam exposure. Through electron beam exposure, the pattern of the silicon optical end face coupler is exposed on the substrate. The shorter the wavelength of the light used, the higher the precision. Since electrons are a kind of wave with extremely short wavelength, electron beam exposure can achieve high preparation precision for preparing end face couplers. However, the speed of electron beam exposure for preparing end face couplers is very slow, and for some scenarios where the precision requirement is not high but batch production is required, electron beam exposure cannot meet the needs of such scenarios. The specific process of preparing the end face coupler (taking the silicon optical end face coupler as an example) according to the application embodiments is introduced below.

[0081] First, a template of a silicon optical end-face coupler is prepared on a pure silicon substrate by using an electron beam exposure technique, a plurality of sub-molds are made according to the template, the image of the sub-mold is opposite to that of the template, then the sub-mold is imprinted on a silicon-on-insulator (SOI) substrate on an insulating substrate by using a nano-imprinting technique, and after demolding, etching and adhesive removal, the silicon optical end-face coupler is obtained. According to the number of silicon optical end-face couplers required, the corresponding sub-mold is prepared, so that the silicon optical end-face coupler can be mass-produced with high precision.

[0082] Referring to Figure 1 A system architecture diagram is provided for the embodiment of the present application, and the system comprises a terminal device 101, a smearing device 102, an electron beam exposure device 103, an etching device 104 and a nano-imprinting device 105. The terminal device 101 is used for writing a pattern of a silicon optical end-face coupler to be prepared, the smearing device 102 is used for smearing a colloid on a first substrate and a second substrate, the electron beam exposure device 103 obtains the pattern of the silicon optical end-face coupler to be prepared from the terminal device 101, and then exposes the pattern on the colloid by using electron beam exposure, the etching device 104 etches the pattern on the first substrate and the second substrate, and the nano-imprinting device 105 imprints a template or a sub-mold on the first substrate or the second substrate.

[0083] Referring to Figure 2 A flowchart of a preparation method of an end-face coupler is provided for the embodiment of the present application, and the method comprises the following steps:

[0084] Step 201: A template of an end-face coupler is prepared by using an electron beam exposure technique. The pattern of the template is consistent with that of the end-face coupler.

[0085] Specifically, in the embodiment of the present application, the template of the end-face coupler is prepared by using the electron beam exposure technique. The template of the end-face coupler is used for subsequent batch production of sub-molds, so that high precision is required when the template is prepared. Meanwhile, only one template is needed, so that the electron beam exposure can meet the requirement of the precision of the template and does not take too much time.

[0086] The pattern of the template of the end-face coupler is consistent with that of the end-face coupler, and is neither a mirror image nor an inverted image.

[0087] For example, when a silicon optical end-face coupler is prepared, the image of the silicon optical end-face coupler to be prepared is exposed on a template by using an electron beam exposure technique. The pattern on the template is consistent with that of the silicon optical end-face coupler to be prepared.

[0088] Step 202: A plurality of sub-molds of the template are prepared based on the template, and the pattern of the sub-mold is consistent with that of the template.

[0089] Specifically, after obtaining the template of the end face coupler, the number of sub-molds is determined according to the number of end face couplers to be fabricated. The pattern of the sub-mold matches the pattern of the template; that is, the pattern of the sub-mold is a mirror image of the template pattern.

[0090] For example, if the pattern of a silicon photonics end-face coupler is "18", then the template pattern of the silicon photonics end-face coupler is also "18", and the pattern of the sub-mode of the silicon photonics end-face coupler is "81". These patterns are for illustrative purposes only and do not have actual meaning. If 10 silicon photonics end-face couplers need to be fabricated, then 10 sub-modes need to be fabricated based on the template.

[0091] Step 203: Nanoimprint the first substrate using multiple sub-molds to obtain the end-face coupler.

[0092] Specifically, each sub-mold is nanoimprinted onto the first substrate to obtain an end-face coupler. The number of first substrates is the same as the number of sub-molds. In this embodiment, the first substrate is an SOI substrate, and the structure of the SOI substrate is as follows: Figure 3 As shown, the top and bottom layers are Si, and the middle layer is SiO2. SiO2 is an insulating material that can reduce the parasitic capacitance between Si layers. At the same time, the SOI substrate also has the advantages of high integration density and high speed. Therefore, this application uses an SOI substrate to fabricate the end coupler, but does not impose any specific limitations.

[0093] For example, the final silicon photonics end-face coupler can be obtained by nanoimprinting a sub-mode of the silicon photonics end-face coupler on an SOI substrate.

[0094] In some embodiments, such as Figure 3 As shown, the template for the end-face coupler is prepared using electron beam lithography, including the following steps:

[0095] Step 301: Apply photoresist to the second substrate.

[0096] Specifically, when the template of the end-face coupler is made, a layer of photoresist is first spin-coated on the second substrate, which can be made of the same material as the first substrate or a different material. In the embodiment of the present application, the second substrate is a 4-inch silicon substrate because the SOI substrate is expensive and only the pattern of the end-face coupler needs to be prepared in the template of the end-face coupler, and the expensive SOI substrate is not needed. The photoresist is divided into positive resist and negative resist. In the embodiment of the present application, the positive resist is used, and the pattern obtained by etching the positive resist is consistent with the pattern of the end-face coupler. The thickness of the photoresist is determined according to the etching equipment and the selection ratio of the etching process, which is not limited in the present application. After the photoresist is coated, a certain amount of solvent residue is usually left, so the second substrate coated with the photoresist is placed on a hot plate for heat baking, so that the solvent residue in the photoresist is volatilized, thereby avoiding affecting the pattern of the end-face coupler in the subsequent photoetching process. At the same time, the photoresist will solidify during heat baking, making the photoresist more solid and stable, and the photoresist can more firmly protect the image of the end-face coupler in the subsequent photoetching process. In the embodiment of the present application, the temperature of the hot plate can be controlled at 180 degrees, and the heat baking time can be 3 minutes.

[0097] Step 302, according to the pattern of the end-face coupler, the photoresist is subjected to electron beam exposure to obtain a first resist mask; the first resist mask has the pattern of the end-face coupler.

[0098] Specifically, the pattern of the end-face coupler has multiple types, such as an end-face mirror type, an end-face grating type, an end-face inverted cone type, etc. The end-face inverted cone type is prepared in the embodiment of the present application. The pattern of the end-face coupler can be edited by a terminal device. In the embodiment of the present application, python is used to edit the pattern of the end-face coupler to be prepared. After the electron beam exposure device obtains the pattern of the end-face coupler, the pattern is exposed on the photoresist prepared in the previous step, but the pattern of the end-face coupler cannot be seen on the photoresist after exposure. Therefore, the photoresist is developed and fixed in a fixing solution, and the pattern of the end-face coupler can be seen. The developing process can be a solution wet etching developing process. The developing solution can be a pentyl acetate solution, and the developing time in the pentyl acetate solution is 75s. The fixing solution can be an isopropyl alcohol solution, and the fixing time in the isopropyl alcohol solution is 30s. After the photoresist is developed and fixed, the first resist mask is obtained, and the image of the end-face coupler can be seen on the first resist mask, and the pattern of the first resist mask is the mirror surface pattern of the end-face coupler.

[0099] Step 303, according to the first resist mask, the second substrate is etched to obtain a template of the end-face coupler.

[0100] Specifically, after the first glue mask is obtained, the end face coupler template is obtained by etching the second substrate. At this time, the end face coupler template is a convex template, and the convex part is the pattern of the end face coupler. The height of the convex part is 290 nm, which can be obtained by atomic force microscope test. The purpose of etching is to transfer the pattern on the first glue mask to the second substrate. Etching is to remove the thin film without photoresist protection by chemical or physical action, so as to complete the purpose of pattern transfer.

[0101] In some embodiments, etching the second substrate comprises: etching the second substrate by an inductively coupled plasma etching process.

[0102] Specifically, in the embodiments of the present application, the second substrate is etched by an inductively coupled reaction ion deep silicon etching device. The gas required for etching is C4F8 and SF6. The etching time is controlled to be 140 s, and the etching height is 290 nm.

[0103] In some embodiments, after the second substrate is etched to obtain the end face coupler template, the second substrate is further subjected to a residual glue removal treatment by a microwave plasma glue removal process.

[0104] Specifically, after the end face coupler template is obtained, some photoresist will remain on the template. Therefore, the template is placed in an acetone solution for ultrasonic treatment for 5 minutes, and an oxygen is punched for 1 minute by a microwave plasma etching device. By this method, the residual photoresist on the second substrate can be removed.

[0105] In some embodiments, based on the template, a plurality of sub-templates of the template are prepared, comprising: after the template is subjected to anti-sticking treatment, the template is imprinted on a soft template by nano-imprinting technology; and the soft template is subjected to demolding treatment to obtain the sub-templates.

[0106] Specifically, after the end face coupler template is obtained, the template is first subjected to anti-sticking treatment. Because the template needs to be imprinted in subsequent sub-template manufacturing, if the template has stickiness, it will affect the effect of imprinting. The anti-sticking treatment of the template can be completed by spin coating anti-sticking glue on the template.

[0107] In some embodiments, the anti-sticking treatment of the template comprises: spin coating anti-sticking glue on the template to achieve a hydrophobic angle greater than 90 degrees.

[0108] Specifically, when the template is subjected to anti-sticking treatment, the anti-sticking glue is spin coated on the template to ensure that the hydrophobic angle is greater than 90 degrees. The hydrophobic angle refers to the included angle formed when the anti-sticking glue contacts the template. When the hydrophobic angle is greater than 90 degrees, the anti-sticking glue can be effectively prevented from remaining and adhering on the template after imprinting, so that the anti-sticking effect can be achieved.

[0109] Then, a plurality of soft templates (IPS) are obtained, the material of the soft templates is a high polymer, and the number of the soft templates is the number of the sub-molds. Before using the soft templates, the soft templates need to be purified, and the dust on the soft templates can be blown away by a nitrogen gun to purify the soft templates.

[0110] Finally, the nano-imprinting technology is adopted to imprint the template on the soft template, and the template and the soft template are demolded to obtain the soft template, that is, the sub-mold. The pattern on the sub-mold is matched with the pattern of the to-be-prepared end face coupler, that is, the mirror pattern of the end face coupler, and the sub-mold is a recessed structure. The nano-imprinting technology can adopt Obducat Eitre6 nano-imprinting.

[0111] In some embodiments, the first substrate is nano-imprinted by a plurality of sub-molds to obtain an end face coupler, including: smearing imprinting glue on the first substrate; imprinting a plurality of sub-molds on the imprinting glue by the nano-imprinting technology to obtain a second glue mask, and etching the first substrate according to the second glue mask to obtain the end face coupler.

[0112] Specifically, the first substrate used in the embodiments of the application is an SOI substrate, the size of which is 3cm*3cm, and the top silicon thickness is 220nm. First, the first substrate needs to be cleaned, and the first substrate is ultrasonically cleaned by using an acetone and isopropyl alcohol solution, and then the first substrate is placed in a microwave plasma glue removal machine for oxidation treatment, so that the surface of the first substrate remains clean, and the adhesion of the first substrate can be increased at the same time. The time is controlled to be about 6 minutes. Then, the imprinting glue is spin-coated on the first substrate, the spin-coating speed is 2500rmp, and the thickness of the imprinting glue is 260nm. While smearing the imprinting glue, 10nm of tackifying glue is also smeared, which is smeared below the imprinting glue, so as to improve the tackifying effect of the first substrate and prevent the pattern on the first substrate from being delaminated when the first substrate is demolded.

[0113] Then, the sub-mold is imprinted on the imprinting glue by the nano-imprinting technology. Since the sub-mold is recessed, after the sub-mold is imprinted on the first substrate, the obtained first substrate is convex. After solidification for 100s, the second glue mask is obtained by using an ultraviolet curing process. The pattern of the second glue mask is the pattern of the end face coupler.

[0114] Finally, the first substrate is demolded, and the first substrate is etched by the second glue mask. After etching for 160s, the end face coupler is obtained. At this time, the end face coupler is the same as the template, and both are convex. The convex part is the pattern of the end face coupler, and the height is 220nm. The same can also be obtained by atomic force microscope testing.

[0115] In this embodiment, a total of two etching processes are required. The first etching is performed on the second substrate to obtain the template for the end-face coupler, and the second etching is performed on the first substrate to obtain the end-face coupler. Since the first and second substrates are made of different materials—the first substrate is an SOI substrate and the second substrate is a pure silicon substrate—the etching time and rate are also different, resulting in different final etching heights.

[0116] In some embodiments, the first substrate is etched using an inductively coupled plasma etching process according to the second photomask.

[0117] Specifically, inductively coupled plasma etching is used when etching the first substrate. During the etching process, etching is performed according to the second mask. The gas combination used for etching is chlorine at 30 sccm and argon at 20 sccm, which can avoid pattern distortion caused by the bottom adhesive layer.

[0118] Before etching the first substrate, it is necessary to remove the adhesive residue remaining on the first substrate due to the imprinting process, such as... Figure 4 As shown, the ideal imprint is Figure 4 As shown on the right, but the actual imprinting result is as follows: Figure 4 As shown on the left, if the base resist is not removed, it will not only affect the etching time, but also, if the base resist is uneven, continued etching will affect the transfer of the pattern. In removing the base resist, this embodiment of the application uses a Sentech ICP (Inductively Coupled) reactive ion etching machine to remove the base resist near the coupler on the upper surface of the first substrate by dry etching, and then performs etching.

[0119] In some embodiments, multiple sub-molds are imprinted onto an imprinting adhesive using nanoimprinting technology. The method further includes: after heating the imprinting adhesive, and before the imprinting adhesive cures, imprinting multiple sub-molds onto the imprinting adhesive using nanoimprinting technology.

[0120] Specifically, after applying the imprinting adhesive, the first substrate is placed on a hot plate and baked for 2 minutes. When the imprinting adhesive is in a semi-fluid state, the sub-mold is quickly placed on the first substrate, and the sub-mold is imprinted on the imprinting adhesive using nanoimprinting technology.

[0121] In some embodiments, etching the first substrate according to the second resist mask includes: removing residual resist from the first substrate by microwave plasma resist removal process.

[0122] Specifically, after etching, some imprinting adhesive remains on the first substrate, so the first substrate needs to be de-adhesive treated. A microwave plasma de-adhesive remover with oxygen and nitrogen is used to remove the residual imprinting adhesive at a power of 550W for 10 minutes to obtain the final end-face coupling device.

[0123] In the embodiments of the present application, two times of removing residual glue are needed in total, the first time is to remove the photoresist on the second substrate after the etching of the second substrate is completed, and the second time is to remove the imprint glue on the first substrate after the etching of the first substrate is completed. Since the removed glue is different, one is photoresist and the other is imprint glue, and therefore the removing methods are also different.

[0124] In some embodiments, an end face coupler is prepared by the above method. The end face coupler is a reverse taper type silicon optical end face coupler, and the initial line width of the reverse taper type silicon optical end face coupler is less than 100 nm.

[0125] Specifically, by using the preparation method of the end face coupler, the end face coupler is a reverse taper type end face coupler, and the initial line width of the reverse taper type end face coupler is less than 100 nm, and the waveguide width is 1 μm, which is high in precision. Figure 5 The left is a top view of the reverse taper type silicon optical end face coupler, Figure 5 The right is a perspective view of the reverse taper type silicon optical end face coupler.

[0126] In order to further explain the present application, the preparation method is described in detail below with the preparation of the reverse taper type silicon optical end face coupler as a specific implementation scenario, as shown in the flow chart of the preparation of the reverse taper type silicon optical end face coupler, Figure 6 The specific steps for preparing the reverse taper type silicon optical end face coupler are shown in the flow chart of the preparation of the reverse taper type silicon optical end face coupler, Figure 7 The specific steps for preparing the reverse taper type silicon optical end face coupler are shown in the flow chart of the preparation of the reverse taper type silicon optical end face coupler.

[0127] First, the preparation of the reverse taper type silicon optical end face coupler template and the sub-mode part is introduced:

[0128] Step 701, a 4-inch pure silicon plate is prepared as a second substrate, and a graph of the reverse taper type silicon optical end face coupler is written by python;

[0129] Step 702, a layer of photoresist is spin-coated on the second substrate, and the photoresist adopts positive glue;

[0130] Step 703, the second substrate is placed on a hot plate, the temperature of the hot plate is 180 degrees, and the hot baking time is 3 minutes;

[0131] Step 704, the graph of the reverse taper type silicon optical end face coupler is obtained by an electron beam exposure device, and the graph is exposed on the photoresist of the second substrate to obtain a first glue mask;

[0132] Step 705, an inductively coupled reactive ion deep silicon etching device is used to etch the second substrate;

[0133] Step 706, the second substrate is subjected to a residual glue removing treatment to obtain a template of the reverse taper type silicon optical end face coupler, and the height of the convex part of the template is 290 nm;

[0134] Step 707, spin-coat anti-sticking glue on the template so that the hydrophobic angle is greater than 90 degrees;

[0135] Step 708, prepare soft templates according to the number of inverted cone type silicon optical end face couplers, and blow off dust on the soft templates with a nitrogen gun;

[0136] Step 709, use nano-imprinting technology to imprint the template coated with anti-sticking glue on multiple soft templates, and then demold to obtain multiple sub-molds.

[0137] Then introduce the preparation of inverted cone type silicon optical end face couplers:

[0138] Step 710, prepare an SOI plate with a size of 3cm*3cm and a top silicon thickness of 220nm as a first substrate;

[0139] Step 711, use acetone and isopropyl alcohol solution to ultrasonically clean the first substrate, and then put the first substrate into a microwave plasma glue removal machine for oxidation treatment;

[0140] Step 712, spin-coat a layer of 10nm of tackifying glue on the first substrate;

[0141] Step 713, spin-coat a layer of 260nm thick imprinting glue on the tackifying glue, and the spin-coating speed is 2500rmp;

[0142] Step 714, put the first substrate into a hot plate and bake for 2 minutes;

[0143] Step 715, when the imprinting glue is in a semi-flowing state, quickly place the sub-mold on the first substrate, and then demold by nano-imprinting technology;

[0144] Step 716, use ultraviolet curing process to cure the imprinting glue on the first substrate to obtain a second glue mask;

[0145] Step 717, remove the residual imprinting glue on the first substrate by dry etching.

[0146] Step 718, etch the first substrate by using an inductively coupled reactive ion deep silicon etching device;

[0147] Step 719, remove the residual imprinting glue by using a microwave plasma glue removal machine to blow oxygen and nitrogen to obtain an inverted cone type silicon optical end face coupler.

[0148] In the embodiment of the present application, the template of the end face coupler is prepared by the electron beam exposure technology, so as to ensure the precision of the end face coupler; then the template can be used to quickly copy a plurality of sub-templates, so as to realize the effect of quick preparation, and further ensure the precision of the end face coupler. Therefore, the embodiment of the present application can realize the effect of quick preparation under the premise of ensuring the precision of the end face coupler, and does not need high preparation equipment, and also reduces the cost.

[0149] Based on the same technical concept, the embodiment of the present application provides a preparation device of an end face coupler, which comprises:

[0150] An electron beam exposure device is used to prepare a template of the end face coupler by electron beam exposure technology; the pattern of the template is consistent with the pattern of the end face coupler;

[0151] A nano-imprinting device is used to prepare a plurality of sub-templates of the template based on the template, and the patterns of the sub-templates are mutually consistent with the pattern of the template;

[0152] The nano-imprinting device is also used to nano-imprint the first substrate by the plurality of sub-templates, so as to obtain a plurality of end face couplers.

[0153] Optionally, it further comprises:

[0154] A smearing device is used to smear photoresist on the second substrate;

[0155] The electron beam exposure device is also used to perform electron beam exposure on the photoresist according to the pattern of the end face coupler, so as to obtain a first photoresist mask; the first photoresist mask has the pattern of the end face coupler;

[0156] An etching device is used to etch the second substrate according to the first photoresist mask, so as to obtain the template of the end face coupler.

[0157] Optionally, the nano-imprinting device is also used to:

[0158] After the template is subjected to anti-sticking treatment, the template is imprinted on a soft template by nano-imprinting technology;

[0159] The soft template is subjected to demolding treatment, so as to obtain a sub-template.

[0160] Optionally, the smearing device is also used to:

[0161] The template is spin-coated with anti-sticking glue and the surface hydrophobic angle is greater than 90°.

[0162] Optionally, the smearing device is also used to:

[0163] The smearing device is also used to smear imprinting glue on the first substrate;

[0164] Optionally, the nano-imprinting device is further configured to:

[0165] imprint the plurality of sub-molds on the imprinting glue by nano-imprinting technology to obtain a second glue mask, and etch the first substrate according to the second glue mask to obtain the end-coupler.

[0166] Optionally, the nano-imprinting device is further configured to:

[0167] imprint the plurality of sub-molds on the imprinting glue by nano-imprinting technology before the imprinting glue is solidified after being heated.

[0168] Optionally, the etching device is further configured to:

[0169] perform a residual glue removing process on the second substrate by a microwave plasma glue removing process;

[0170] perform a residual glue removing process on the first substrate by a microwave plasma glue removing process.

[0171] Optionally, the etching device is further configured to:

[0172] etch the second substrate by an inductively coupled plasma etching process;

[0173] etch the first substrate by an inductively coupled plasma etching process according to the second glue mask.

Claims

1. A method of making an end face coupler, characterized by, The method comprises the following steps: a template of the end-face coupler is prepared by electron beam exposure technology; the pattern of the template is consistent with the pattern of the end-face coupler; a plurality of sub-templates of the template are prepared based on the template; the patterns of the sub-templates are mutually consistent with the pattern of the template; a first substrate is nano-imprinted by the plurality of sub-templates to obtain a plurality of end-face couplers.

2. The method of claim 1, wherein, The method of preparing the template of the end-face coupler by electron beam exposure technology comprises the following steps: photoresist is applied on a second substrate; the photoresist is exposed by electron beam exposure according to the pattern of the end-face coupler to obtain a first resist mask; the first resist mask has the pattern of the end-face coupler; the second substrate is etched according to the first resist mask to obtain the template of the end-face coupler.

3. The method of claim 1, wherein, The method of preparing the plurality of sub-templates of the template based on the template comprises the following steps: after the template is subjected to anti-sticking treatment, the template is nano-imprinted on a soft template by nano-imprinting technology; the soft template is subjected to demolding treatment to obtain a sub-template.

4. The method of claim 3, wherein, The anti-sticking treatment of the template comprises the following steps: the template is spin-coated with anti-sticking glue and the surface hydrophobic angle is greater than 90°.

5. The method of claim 1, wherein, The method of nano-imprinting the first substrate by the plurality of sub-templates to obtain the end-face coupler comprises the following steps: the first substrate is coated with imprinting glue; the plurality of sub-templates are nano-imprinted on the imprinting glue to obtain a second resist mask, and the first substrate is etched according to the second resist mask to obtain the end-face coupler.

6. The method of claim 5, wherein, The method of nano-imprinting the plurality of sub-templates on the imprinting glue by nano-imprinting technology further comprises the following steps: after the imprinting glue is heated, the plurality of sub-templates are nano-imprinted on the imprinting glue before the imprinting glue is solidified.

7. The method of claim 2, wherein, After the second substrate is etched, the method further comprises the following steps: the second substrate is subjected to residual glue removal treatment by microwave plasma glue removal process; After the first substrate is etched according to the second resist mask, the method further comprises the following steps: the first substrate is subjected to residual glue removal treatment by microwave plasma glue removal process.

8. The method of claim 2, wherein, The method of etching the second substrate comprises the following steps: the second substrate is etched by inductively coupled plasma etching process; The method of etching the first substrate according to the second resist mask comprises the following steps: the first substrate is etched according to the second resist mask by inductively coupled plasma etching process.

9. An end-coupler characterized by, The end-face coupler is prepared by the method according to any one of claims 1 to 8.

10. The end coupling of claim 9, wherein, The end-face coupler is a reverse-tapered silicon optical end-face coupler, and the initial line width of the reverse-tapered silicon optical end-face coupler is less than 100 nm.

11. An apparatus for making an end-coupler, characterized by The method comprises the following steps: an electron beam exposure device is used to prepare a template of an end-face coupler by electron beam exposure technology; the pattern of the template is consistent with the pattern of the end-face coupler; a nano-imprinting device is used to prepare a plurality of sub-templates of the template based on the template; the patterns of the sub-templates are mutually consistent with the pattern of the template; the nano-imprinting device is further used to nano-imprint a first substrate by the plurality of sub-templates to obtain a plurality of end-face couplers.

12. The apparatus of claim 11, wherein, The method comprises the following steps: an application device is used to apply photoresist on a second substrate; The electron beam exposure device is further configured to perform electron beam exposure on the photoresist according to the pattern of the end-face coupler to obtain a first photoresist mask, and the first photoresist mask has the pattern of the end-face coupler. The etching device is configured to etch the second substrate according to the first photoresist mask to obtain a template of the end-face coupler.

13. The apparatus of claim 12, wherein, The method further comprises: The smearing device is further configured to smear imprinting glue on the first substrate. The nano-imprint device is further configured to imprint the plurality of sub-molds on the imprinting glue by using a nano-imprint technology to obtain a second photoresist mask, and etch the first substrate according to the second photoresist mask to obtain the end-face coupler.

14. The apparatus of claim 13, wherein, The method further comprises: The nano-imprint device is further configured to, after heating the imprinting glue, imprint the plurality of sub-molds on the imprinting glue by using a nano-imprint technology before the imprinting glue is solidified.

15. The apparatus of claim 12, wherein, The method further comprises: The etching device is further configured to etch the second substrate by using an inductively coupled plasma etching process. The etching device is further configured to etch the first substrate by using an inductively coupled plasma etching process according to the second photoresist mask.

Images