Multilayer interference film product and continuous preparation method thereof

Abstract

The invention discloses a multi-layer interference film product and a continuous preparation method thereof, and the continuous preparation method of the multi-layer interference film product comprises the following steps: providing continuous line coating equipment which comprises N independent cavities arranged in sequence, and loading a base material on a rotating stand of the continuous line coating equipment; the base material is cleaned in the first cavity; sequentially depositing different interference film layers on one side of the base material from the second cavity to the (N-1) th cavity; and depositing in the Nth cavity to form a post-processing layer. According to the continuous preparation method, the cleanliness of the base material, the adhesive force of the interference film layer and the stability of the overall performance are ensured. The multilayer interference film product is prepared by the continuous preparation method of the multilayer interference film product. The multi-layer interference film product has high adhesive force, excellent optical performance, uniform film layer structure and good mechanical durability, efficient and continuous batch production of the multi-layer interference film product is realized, and the production time and cost are reduced.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of magnetron sputtering, and particularly relates to a multilayer interference film product and a continuous preparation method thereof. BACKGROUND

[0002] With the upgrading of market consumption concept, ordinary single-layer to three-layer interference films cannot meet the color requirements of the market, and the equipment configuration of single machines cannot realize mass production of multilayer interference films. Through multiple cavities of a continuous line, each interference film is deposited in a separate cavity. The target material is limited on the equipment configuration of the single machine, multiple interference layers are sputtered using the same target material, and the uniformity of the whole column from top to bottom cannot be adjusted to meet the production; the color requirements of multilayer interference films are getting higher and higher, and the uniformity of multilayer interference films cannot be guaranteed under the current equipment conditions of single machines, and the efficiency is very low. SUMMARY

[0003] To solve the above problems, the primary purpose of the present application is to provide a multilayer interference film product and a continuous preparation method thereof, which solves the technical problem that the current technology cannot guarantee the uniformity of multilayer interference films.

[0004] To achieve the above-mentioned purposes, the technical solutions of the present application are as follows:

[0005] The present application provides a continuous preparation method of a multilayer interference film product, comprising the steps of:

[0006] providing a continuous line coating equipment, the continuous line coating equipment comprising N independent cavities arranged in sequence; loading a substrate on a turret of the continuous line coating equipment;

[0007] cleaning the substrate in the first cavity;

[0008] depositing different interference film layers on one side of the substrate in the second cavity to the (N-1) cavity in sequence;

[0009] depositing a post-treatment layer in the N cavity.

[0010] The continuous preparation method of the multilayer interference film product provided by the present application realizes efficient and continuous batch production of the multilayer interference film product by using the continuous line coating equipment and multiple independent cavities, reduces the production time and cost; by sequentially cleaning the substrate, depositing different interference film layers and depositing a post-treatment layer, the cleanliness of the substrate, the adhesion of the interference film layer and the stability of the overall performance are ensured; the independent cavity design avoids cross contamination between process steps, allows optimization of conditions in different steps, and improves production flexibility and product consistency.

[0011] Further, at least one pair of target materials is arranged in the second cavity to the Nth cavity, the target materials include Si target and Cr target, and the target material pairs are symmetrically arranged on both sides of the rotating frame.

[0012] The type of gas, gas pressure, target material power, bias voltage, and sputtering time in each cavity are independently controlled, and the type of gas is at least one of argon, nitrogen, and hydrogen.

[0013] By arranging at least one pair of Si target and Cr target in the second cavity to the Nth cavity and symmetrically arranging the target material pairs on both sides of the rotating frame, the uniformity and consistency of the deposition of different material films are ensured; by independently controlling the type of gas, gas pressure, target material power, bias voltage, and sputtering time of each cavity, the chemical composition, microstructure, and performance such as refractive index and hardness of each film layer are allowed to be precisely controlled; by using at least one of argon, nitrogen, and hydrogen as a reaction gas, the deposition of various functional films such as nitrides and hydrides is achieved, and the flexibility of the process and the functionality of the film layers are enhanced.

[0014] Further, the interference film layer at least includes a Cr transition layer, a plurality of alternating stacked SiN x layers, and a plurality of SiH layers, wherein the Cr transition layer is located between one side of the substrate and the SiN x layers.

[0015] The interference film layer includes a Cr transition layer, a plurality of alternating stacked SiN x layers, and a plurality of SiH layers, the Cr transition layer improves the adhesion between the substrate and the subsequent film layers, and reduces the risk of peeling; the plurality of alternating stacked SiN x layers and SiH layers optimize the optical performance such as reflectivity and transmissivity through interference effect, while enhancing the mechanical strength, wear resistance, and chemical stability of the film layers, and realizing a multifunctional composite film layer structure.

[0016] Further, in the second cavity, argon is introduced, and the Cr target is sputtered to deposit the Cr transition layer on the surface of the substrate.

[0017] By introducing argon in the second cavity and sputtering the Cr target to deposit the Cr transition layer, uniform deposition and good adhesion of the Cr transition layer are ensured; the Cr transition layer serves as a base layer to provide a stable interface for the subsequent interference film layer, improve the adhesion and durability of the overall film layer, and avoid defects caused by direct contact between the substrate and other interference film layers.

[0018] Further, in the third cavity to the (N-1)th cavity, a plurality of alternating stacked SiNx layers and a plurality of SiH layers are deposited on the side of the Cr transition layer away from the substrate; wherein,

[0019] argon and nitrogen, and the Si target sputtering is started to deposit the SiN x layer;

[0020] argon and hydrogen, and the Si target sputtering is started to deposit the SiH layer.

[0021] By depositing the alternately stacked SiN x layer and SiH layer in the third cavity to the (N-1)th cavity, and by controlling the gas and the Si target sputtering, for example, argon and nitrogen are introduced for depositing the SiN x layer, and argon and hydrogen are introduced for depositing the SiH layer, the accurate deposition of different refractive index film layers is achieved; the alternately stacked SiN x layer and SiH layer structure enhances the optical interference effect, can customize the reflection or transmission characteristics in a specific wavelength range, and at the same time improves the toughness, impact resistance and environmental stability of the film layer.

[0022] Further, the post-processing layer is a diamond-like layer or a SiN x protective layer.

[0023] The post-processing layer is a diamond-like layer (denoted as a DLC layer) or a SiN x protective layer, which provides additional surface hardness, wear resistance, corrosion resistance and hydrophobicity, and prolongs the service life of the multilayer interference film product; the DLC layer has a low friction coefficient and high hardness, and the SiN x layer has good chemical inertness and protection performance, thereby enhancing the applicability of the multilayer interference film product in harsh environments.

[0024] Further, in each of the cavities, the gas pressure is set to 0.1 Pa to 0.6 Pa; and / or,

[0025] the bias voltage is set to 50 V to 300 V; and / or,

[0026] the power of the target material is set to 5 kW to 15 kW; and / or,

[0027] the duty cycle is set to 50% to 70%.

[0028] By setting the gas pressure in each cavity to 0.1 Pa to 0.6 Pa, the bias voltage to 50 V to 300 V, the target material power to 5 kW to 15 kW, and the duty cycle to 50% to 70%, the stability and efficiency of the sputtering process are optimized; these parameters ensure the uniformity, high density and low defect rate of each film layer, while controlling the internal stress and adhesion strength of the film layer, improving the production repeatability and film layer quality.

[0029] Further, in the cleaning step in the first cavity, the following steps are included:

[0030] The argon is introduced, a bias of 200V~400V is applied, the duty cycle is set to 30%~70%, the arc target cleaning is started, the current is set to 50A, the cleaning time is 120S, and after the cleaning is completed, the temperature is kept for 5min.

[0031] The substrate is ion cleaned in the first cavity, the argon is introduced, a bias of 200V~400V is applied, the duty cycle is set to 30%~70%, the arc target cleaning is started, the current is set to 50A, and after the cleaning is completed, the temperature is kept for 5min, which effectively removes the pollutants and oxides on the surface of the substrate, and improves the adhesion of the film layer; the temperature keeping step helps to stabilize the temperature of the substrate, reduces the deformation caused by thermal stress, and provides a clean and activated surface for subsequent deposition.

[0032] Further, the total number of the interference film layers is 5~15, and at least 3 of the interference film layers are dielectric material layers with different refractive indexes.

[0033] It should be noted that N is a natural number greater than or equal to 8; by limiting the total number of the interference film layers to 5~15, and at least 3 of the interference film layers being dielectric material layers with different refractive indexes, the significant optical interference effect is ensured, and the functions of wideband anti-reflection, high reflection or color adjustment can be realized; the range of the number of the interference film layers balances the optical performance and manufacturing complexity, avoids stress accumulation and cost increase caused by too many layers, and optimizes the optical design through the refractive index change.

[0034] The application also provides a multilayer interference film product prepared by the method.

[0035] The multilayer interference film product is prepared by the method, so it inherits all the advantages of the method, including high adhesion, excellent optical performance, uniform film layer structure, good mechanical durability and environmental stability; the consistency of the preparation method ensures the reliability and repeatability of the product, and it is suitable for various applications such as optical devices, decorative coatings, protective coatings, etc.

[0036] Compared with the prior art, the application has the beneficial effects that: the continuous preparation method of the multilayer interference film product provided by the application comprises the steps of: providing a continuous line coating equipment, the continuous line coating equipment comprising N independent cavities arranged in sequence, loading a substrate on a rotating frame of the continuous line coating equipment, and making the substrate pass through the cavities in sequence; cleaning the substrate in the first cavity; depositing different interference film layers on one side of the substrate in the second cavity to the (N-1)th cavity in sequence; and depositing a post-treatment layer in the Nth cavity. The continuous preparation method realizes efficient and continuous batch production of the multilayer interference film product by using the continuous line coating equipment and the multiple independent cavities, reduces the production time and cost, ensures the cleanliness of the substrate, the adhesion of the interference film layers, and the stability of the overall performance by sequentially performing substrate cleaning, deposition of different interference film layers, and deposition of a post-treatment layer, and avoids cross contamination between process steps by the independent cavity design, allows optimization of conditions in different steps, and improves production flexibility and product consistency.

[0037] The multilayer interference film product provided by the application is prepared by the continuous preparation method of the multilayer interference film product provided by the application. The multilayer interference film product has high adhesion, excellent optical performance, uniform film layer structure, good mechanical durability, and environmental stability; the consistency of the preparation method ensures the reliability and repeatability of the product, and is suitable for optical devices, decorative coatings, protective coatings, and various applications. BRIEF DESCRIPTION OF DRAWINGS

[0038] Fig. 1 is a structural schematic diagram of the multilayer interference film product provided by the embodiment of the application.

[0039] Fig. 2 is a flowchart of the continuous preparation method of the multilayer interference film product provided by the application.

[0040] Fig. 3 is a flowchart of the continuous preparation method of the multilayer interference film product provided by the specific embodiment of the application.

[0041] Reference signs: 10, substrate; 20, interference film layer; 21, Cr transition layer; 22, SiN x layer; 23, SiH layer; 30, post-treatment layer. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical scheme and advantages of the application clearer, the application is further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the application and do not limit the application.

[0043] To achieve the above object, the technical scheme of the application is as follows:

[0044] Referring to Figs. 1 to 3 The present application provides a continuous preparation method of a multilayer interference film product, comprising the steps of:

[0045] S100: providing a continuous line coating equipment, the continuous line coating equipment comprising N independent cavities arranged in sequence; loading a substrate 10 on a turntable of the continuous line coating equipment;

[0046] S200: cleaning the substrate 10 in the first cavity;

[0047] S300: sequentially depositing different interference film layers 20 on one side of the substrate in the second cavity to the (N-1)th cavity;

[0048] S400: depositing a post-processing layer 30 in the Nth cavity.

[0049] The continuous preparation method of the multilayer interference film product provided by the present application realizes efficient and continuous batch production of the multilayer interference film product by using the continuous line coating equipment and the multiple independent cavities, reduces the production time and cost; by sequentially cleaning the substrate 10, depositing different interference film layers 20, and depositing the post-processing layer 30, the cleanliness of the substrate 10, the adhesion of the interference film layers 20, and the stability of the overall performance are ensured; the independent cavity design avoids cross contamination between process steps, allows optimization of conditions in different steps, and improves production flexibility and product consistency.

[0050] Further, in steps S300-S400, at least one pair of target materials is arranged in the second cavity to the Nth cavity, the target materials comprising Si targets and Cr targets, and the target material pair is symmetrically arranged on both sides of the turntable; wherein,

[0051] The gas type, gas pressure, target material power, bias voltage, and sputtering time in each cavity are independently controlled, and the gas type is at least one of argon, nitrogen, and hydrogen.

[0052] In steps S300-S400, by arranging at least one pair of Si targets and Cr targets in the second cavity to the Nth cavity and symmetrically arranging the target materials on both sides of the turntable, the uniformity and consistency of deposition of different material film layers are ensured; by independently controlling the gas type, gas pressure, target material power, bias voltage, and sputtering time of each cavity, the chemical composition, microstructure, and performance such as refractive index and hardness of each film layer are precisely controlled; by using at least one of argon, nitrogen, and hydrogen as a reaction gas, deposition of various functional film layers such as nitrides and hydrides is realized, and the flexibility of the process and the functionality of the film layers are enhanced.

[0053] Further, in step S300, the interference film layer 20 comprises at least one Cr transition layer 21, a plurality of layers of SiN xLayer 22 and multilayer SiH layer 23, wherein the Cr transition layer 21 is located on one side of the substrate 10 and adjacent to SiN x Between floors 22.

[0054] In step S300, the interference film 20 includes a Cr transition layer 21 and alternating stacked SiN layers. x Layer 22 and SiH layer 23, Cr transition layer 21 improve the adhesion between substrate 10 and subsequent film layers, reducing the risk of peeling; alternating stacked SiN x Layer 22 and SiH layer 23 optimize optical properties such as reflectivity and transmittance through interference effects, while also enhancing the mechanical strength, wear resistance and chemical stability of the film, thus realizing a multifunctional composite film structure.

[0055] Further, in step S200, argon gas is introduced into the second cavity, and Cr target sputtering is turned on to deposit a Cr transition layer 21 on the substrate surface.

[0056] In step S200, by introducing argon gas into the second cavity and turning on the Cr target sputtering to deposit the Cr transition layer 21, the uniform deposition and good adhesion of the Cr transition layer 21 are ensured. As a base layer, the Cr transition layer 21 provides a stable interface for other subsequent interference films, improves the adhesion and durability of the overall film, and avoids defects that may be caused by direct contact between the substrate 10 and other interference films.

[0057] Further, in step S300, in the third to (N-1)th cavities, a plurality of alternately stacked SiNx layers 22 and a plurality of SiH layers 23 are deposited on the side of the Cr transition layer 21 away from the substrate 10; wherein,

[0058] Argon and nitrogen gases are introduced, and Si target sputtering is started to deposit SiN. x Floor 22;

[0059] Argon and hydrogen gas were introduced, and Si target sputtering was turned on to deposit a SiH layer 23.

[0060] In step S300, SiN is deposited alternately stacked in the 3rd to (N-1)th cavities. x Layers 22 and 23, SiN are deposited by controlling the sputtering of gases and the Si target, such as introducing argon and nitrogen. x Layer 22, through which argon and hydrogen are introduced for the deposition of SiH layer 23, achieving precise deposition of films with different refractive indices; alternating stacked SiN x The structure of layer 22 and SiH layer 23 enhances the optical interference effect, allowing for the customization of reflection or transmission characteristics within a specific wavelength range, while also improving the toughness, impact resistance, and environmental stability of the film.

[0061] Further, in step S400, the post-processing layer 30 is a diamond-like layer or a SiN x protective layer.

[0062] In step S400, the post-processing layer 30 is a diamond-like layer (denoted as DLC layer) or a SiN x protective layer, providing additional surface hardness, wear resistance, corrosion resistance, and hydrophobicity, extending the service life of the multilayer interference film product; the DLC layer has a low friction coefficient and high hardness, and the SiN x protective layer has good chemical inertness and protective performance, thereby enhancing the applicability of the multilayer interference film product in harsh environments.

[0063] Further, in steps S200-S400, the gas pressure in each chamber is set to 0.1 Pa-0.6 Pa; and / or, the bias voltage is set to 50 V-300 V; and / or, the target material power is set to 5 kW-15 kW; and / or, the duty cycle is set to 50%-70%.

[0064] In steps S200-S400, by setting the gas pressure in each chamber to 0.1 Pa-0.6 Pa, the bias voltage to 50 V-300 V, the target material power to 5 kW-15 kW, and the duty cycle to 50%-70%, the stability and efficiency of the sputtering process are optimized; these parameters ensure the uniformity, high density, and low defect rate of each film layer, while controlling the internal stress and adhesion strength of the film layer, improving the production repeatability and film layer quality.

[0065] Further, in step S200, during the cleaning step in the first chamber, step S201 is included:

[0066] argon is introduced, a bias voltage of 200 V-400 V is applied, the duty cycle is set to 30%-70%, arc target cleaning is started, the current is set to 50 A, the cleaning time is 120 S, and after cleaning, the temperature is maintained for 5 min.

[0067] In step S201, by ion cleaning the substrate 10 in the first chamber, argon is introduced, a bias voltage of 200 V-400 V is applied, the duty cycle is set to 30%-70%, arc target cleaning is started, the current is set to 50 A, and after cleaning for 120 seconds, the temperature is maintained for 5 minutes, effectively removing contaminants and oxides on the surface of the substrate 10, improving the adhesion of the film layer; the temperature maintaining step helps to stabilize the temperature of the substrate 10, reduces the deformation caused by thermal stress, and provides a clean and activated surface for subsequent deposition.

[0068] Further, in step S300, the total number of interference film layers 20 is 5-15 layers, and at least 3 layers of interference film layers 20 are dielectric material layers with different refractive indices.

[0069] In the embodiments of the present application, the number N of cavities is greater than or equal to 8, in step S300, by limiting the total number of layers of the interference film layer 20 to 5 layers to 15 layers, and at least 3 layers are layers of dielectric materials with different refractive indexes, the significant optical interference effect is ensured, and the functions of wideband anti-reflection, high reflection or color adjustment can be realized; the number of layers of the interference film layer 20 is in the range, which balances the optical performance and manufacturing complexity, avoids stress accumulation and cost increase caused by too many layers, and optimizes the optical design through refractive index change.

[0070] Based on the above-mentioned preparation method of the multilayer interference film product provided by the present application, in the specific embodiments of the present application, the steps include:

[0071] S1: loading the substrate 10 on the rotating frame and placing it in the first cavity, introducing argon into the first cavity, setting the bias voltage to 300V, the duty cycle to 50%, starting the arc target cleaning, setting the current to 50A for cleaning for 120S, and keeping the temperature for 5min after cleaning;

[0072] S2: the rotating frame is transferred to the second cavity, the base vacuum degree is set to 0.001Pa, argon is introduced to adjust the gas pressure to 0.2Pa, the bias voltage is set to 200V, the duty cycle is set to 70%, the Cr target power is turned on, the power is set to 10kw, the sputtering time is 600s, and the Cr transition layer 21 is deposited on one side of the substrate 10;

[0073] S3: the rotating frame is transferred to the third cavity, argon and nitrogen are introduced at the same time, the bias voltage is set to 100V, the duty cycle is set to 50%, the Si target power is turned on, the power is set to 7kw, the Cr target power is kept on, the power is set to 10kw, the sputtering time is 600s, and the SiN x layer 22 is deposited on the side of the Cr transition layer 21 away from the substrate 10;

[0074] S4: the rotating frame is transferred to the fourth cavity, argon and nitrogen are introduced at the same time, the bias voltage is set to 80V, the duty cycle is set to 50%, the Si target power is turned on, the power is set to 10kw, the sputtering time is 300s, and the SiN x layer 22 is continuously deposited;

[0075] S5: the rotating frame is transferred to the fifth cavity, argon and hydrogen are introduced at the same time, the bias voltage is set to 80V, the duty cycle is set to 50%, the Si target power is turned on, the power is set to 10kw, the sputtering time is 200s, and the SiH layer 23 is deposited;

[0076] S6: the rotating frame is transferred to the sixth cavity, argon and nitrogen are introduced at the same time, the bias voltage is set to 80V, the duty cycle is set to 50%, the Si target power is turned on, the power is set to 10kw, the sputtering time is 180s, and the SiN x layer 22 is deposited;

[0077] S7: The rotating frame is transferred to the 7th cavity, argon and hydrogen are introduced, the bias voltage is set to 80V, the duty cycle is 50%, the Si target power is turned on, the power is set to 10kw, the sputtering time is 240s, and the SiH layer 23 is deposited;

[0078] S8: The rotating frame is transferred to the 8th cavity, argon and nitrogen are introduced, the bias voltage is set to 80V, the duty cycle is 50%, the Si target power is turned on, the power is set to 10kw, the sputtering time is 240s, and the SiN layer 22 is deposited; x

[0079] S9: The rotating frame is transferred to the 9th cavity, argon and nitrogen are introduced, the bias voltage is set to 80V, the duty cycle is 50%, the Si target power and the Cr target power are turned on, the Si target power is set to 10kw, the Cr target power is set to 2kw, the sputtering time is 150s, and the post-processing layer 30 is deposited on the outermost layer to complete the film coating;

[0080] S10: The rotating frame is transferred to the 10th cavity, and the gas is exhausted to complete the film coating.

[0081] Based on the above-mentioned preparation method of the multilayer interference film product, the present application also provides a multilayer interference film product, which is prepared by the above-mentioned preparation method of the multilayer interference film product.

[0082] The multilayer interference film product is prepared by the above-mentioned method of the multilayer interference film product, so it inherits all the advantages of the method, including high adhesion, excellent optical performance, uniform film layer structure, good mechanical durability and environmental stability; the consistency of the preparation method ensures the reliability and repeatability of the product, and it is suitable for optical devices, decorative coatings, protective coatings and other applications. Through the multiple cavities of the continuous line, each interference film layer is completed using each individual cavity, so that the uniformity of each film layer is adjusted individually, the product yield is improved, and the product has high hardness, strong corrosion resistance, high chemical stability and other functions, realizing mass production.

[0083] ​Therefore, the application provides a continuous preparation method of a multilayer interference film product, comprising the following steps: providing a continuous line coating equipment, the continuous line coating equipment comprising N independent cavities arranged in sequence, loading a substrate on a rotating frame of the continuous line coating equipment; cleaning the substrate in the first cavity; sequentially depositing different interference film layers on one side of the substrate in the second cavity to the (N-1)th cavity; and depositing a post-treatment layer in the Nth cavity. By using the continuous line coating equipment and the plurality of independent cavities, efficient and continuous batch production of the multilayer interference film product is realized, and the production time and cost are reduced. By sequentially performing substrate cleaning, depositing different interference film layers, and depositing a post-treatment layer, the cleanliness of the substrate, the adhesion of the interference film layers, and the stability of the overall performance are ensured. The independent cavity design avoids cross contamination between process steps, allows optimization of conditions in different steps, and improves production flexibility and product consistency. The application provides a multilayer interference film product prepared by the continuous preparation method of the multilayer interference film product. The multilayer interference film product has high adhesion, excellent optical performance, uniform film layer structure, good mechanical durability, and environmental stability. The consistency of the preparation method ensures the reliability and repeatability of the product, and is suitable for optical devices, decorative coatings, protective coatings, and other applications. The application provides a multilayer interference film product and a continuous preparation method thereof, which overall improves production efficiency, optimizes film layer performance, enhances product reliability, and expands the application range.

[0084] The above is only a preferred embodiment of the application and is not intended to limit the application. Any modification, equivalent replacement, and improvement within the spirit and principle of the application should be included in the protection scope of the application.

Claims

1. A continuous preparation method for a multilayer interference film product, characterized in that, Including the following steps: A continuous line coating apparatus is provided, the continuous line coating apparatus comprising N independent cavities arranged in sequence, and a substrate is loaded onto the rotating frame of the continuous line coating apparatus; The substrate is cleaned within the first cavity; In the second to (N-1)th cavities, different interference films are sequentially deposited on one side of the substrate; A post-processing layer is deposited in the Nth cavity.

2. The continuous preparation method of the multilayer interference film product as described in claim 1, characterized in that, At least one pair of targets, including Si targets and Cr targets, are disposed in the second to the Nth cavities, and the targets are symmetrically arranged on both sides of the rotating frame; wherein... The gas type, gas pressure, target power, bias voltage, and sputtering time in each cavity are independently controlled, and the gas type is at least one of argon, nitrogen, and hydrogen.

3. The continuous preparation method of the multilayer interference film product as described in claim 2, characterized in that, The interference film layer includes at least one Cr transition layer and alternating stacked multilayer SiN. x The substrate consists of a layer and multiple SiH layers, wherein the Cr transition layer is located on one side of the substrate and adjacent to the SiN layer. x Between layers.

4. The continuous preparation method of the multilayer interference film product as described in claim 3, characterized in that, In the second cavity, argon gas is introduced and Cr target sputtering is activated to deposit the Cr transition layer on the substrate surface.

5. The continuous preparation method of the multilayer interference film product as described in claim 4, characterized in that, In the third to (N-1)th cavities, alternating stacked SiNx layers and SiH layers are deposited on the side of the Cr transition layer away from the substrate; wherein, Argon and nitrogen gases were introduced, and Si target sputtering was started to deposit the SiN. x layer; Argon and hydrogen gas are introduced, and Si target sputtering is turned on to deposit the SiH layer.

6. The continuous preparation method of the multilayer interference film product as described in claim 5, characterized in that, The post-treatment layer is a diamond-like carbon layer or a SiN layer. x Protective layer.

7. The continuous preparation method of the multilayer interference film product as described in claim 2, characterized in that, Within each of the aforementioned cavities, the air pressure is set to 0.1 Pa to 0.6 Pa; and / or, Set the bias voltage to 50V~300V; and / or, The power of the target material is set to 5kW~15kW; and / or, Set the duty cycle to 50%~70%.

8. The continuous preparation method of the multilayer interference film product as described in claim 1, characterized in that, The step of performing ion cleaning within the first cavity includes: Introduce argon gas, apply a bias voltage of 200V~400V, set the duty cycle to 30%~70%, start the arc target cleaning, set the current to 50A, and the cleaning time to 120S. After cleaning, keep warm for 5min.

9. The continuous preparation method of the multilayer interference film product as described in claim 1, characterized in that, The total number of interference film layers is 5 to 15, and at least 3 of the interference film layers are dielectric material layers with different refractive indices.

10. A multilayer interference film product, characterized in that, The multilayer interference film product is prepared by the method described in any one of claims 1 to 9.

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